Plasma processing apparatus, electrostatic chuck, and plasma processing method

Abstract

To improve a power efficiency in a plasma processing apparatus.SOLUTION: A plasma processing apparatus comprises: a plasma processing chamber; an electrostatic chuck having a base, a substrate mounting part, and an edge ring mounting part; and at least one of a first power supply part that supplies a power to the substrate mounting part and a second power supply part that supplies power to the edge ring mounting part. The first power supply part comprises: a first electrode layer formed onto a substrate mounting surface of the substrate mounting part; a first attraction electrode layer arranged to a lower direction of the first electrode layer in the substrate mounting part; and a first bias power supply that is electrically connected to the first electrode layer. The second power supply part comprises: a second electrode layer formed onto an edge ring mounting surface of the edge ring mounting part; a second attraction electrode layer that is arranged to the lower direction of the second electrode layer in the edge ring mounting part; and a second bias power supply electrically connected to the second electrode layer.SELECTED DRAWING: Figure 3

Description

[Technical Field]

[0001] The present disclosure relates to a plasma processing apparatus, an electrostatic chuck, and a plasma processing method. [Background technology]

[0002] Patent Document 1 discloses an electrostatic chuck for supporting a substrate and an edge ring. A bias electrode to which bias power for attracting ions is applied is provided within the electrostatic chuck. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Application Publication No. 2020-205379 Summary of the Invention [Problem to be solved by the invention]

[0004] The technology disclosed herein improves power efficiency in plasma processing apparatuses. [Means for solving the problem]

[0005] a first power supply unit configured to supply power to the edge ring mounting unit; a first power supply unit configured to supply power to the edge ring mounting unit; a first electrode layer formed on a substrate mounting surface of the substrate mounting unit; a first attraction electrode layer disposed within the substrate mounting unit below the first electrode layer; and a first bias power supply electrically connected to the first electrode layer; and a second power supply unit configured to supply power to the edge ring mounting unit; and a second electrode layer formed on the edge ring mounting surface of the edge ring mounting unit; a second attraction electrode layer disposed within the edge ring mounting unit below the second electrode layer; and a second bias power supply electrically connected to the second electrode layer. [Effects of the Invention]

[0006] According to the present disclosure, it is possible to improve the power efficiency of a plasma processing apparatus. [Brief explanation of the drawings]

[0007] [Figure 1] FIG. 1 is an explanatory diagram illustrating an example of the configuration of a plasma processing system. [Figure 2] 1 is a cross-sectional view showing an example of the configuration of a plasma processing apparatus; [Figure 3] 4 is a cross-sectional view showing an example of the configuration of a substrate support portion. FIG. [Figure 4] 10A and 10B are explanatory diagrams showing a method for controlling a sheath in an edge region of a substrate. [Figure 5] FIG. 4 is an explanatory diagram showing the arrangement of a first electrode layer on a seal band. [Figure 6] FIG. 2 is an explanatory diagram showing a circuit including a first power supply for attraction and a second power supply for attraction. [Figure 7] 10 is a cross-sectional view showing a part of a substrate support part when the base is made of an insulating material. FIG. [Figure 8]10 is a cross-sectional view showing a part of a substrate support part when the base is made of an insulating material. FIG. [Figure 9] 10 is a cross-sectional view showing a part of a substrate support part when the base includes a conductive member. FIG. [Figure 10] 10 is a cross-sectional view showing a part of a substrate support part when the base includes a conductive member. FIG. [Figure 11] 10 is a cross-sectional view showing a part of a substrate support part when the base is made of an insulating material. FIG. [Figure 12] 10 is a cross-sectional view showing a part of a substrate support part when the base is made of an insulating material. FIG. [Figure 13] FIG. 2 is a plan view showing the arrangement of a first electrode layer and a second electrode layer. [Figure 14] FIG. 14 is an enlarged plan view of a part of FIG. 13. [Figure 15] 15 is a cross-sectional view taken along the line AA in FIG. 14. [Figure 16] FIG. 2 is a plan view showing the arrangement of a first electrode layer and a second electrode layer. [Figure 17] FIG. 2 is a plan view showing the arrangement of a first electrode layer and a second electrode layer. [Figure 18] FIG. 10 is an explanatory diagram showing an example of a suction sequence for an edge ring. [Figure 19] FIG. 10 is an explanatory diagram showing a first example of an adsorption sequence. [Figure 20] FIG. 10 is an explanatory diagram showing a second example of the adsorption sequence. [Figure 21] FIG. 10 is an explanatory diagram showing a third example of the adsorption sequence. DETAILED DESCRIPTION OF THE INVENTION

[0008] In the manufacturing process of semiconductor devices, a semiconductor substrate (hereinafter referred to as "substrate") is subjected to plasma processing in, for example, a plasma processing apparatus. In the plasma processing apparatus, a processing gas is excited inside a chamber to generate plasma, and the substrate supported by an electrostatic chuck is processed by the plasma.

[0009] In plasma processing apparatuses, improvements in power efficiency are required to improve productivity of plasma processing. Conventionally, improvements have been made to increase the capacitance between the substrate and the bias electrode, for example, to improve the bias power supply efficiency. As disclosed in Patent Document 1, when a bias electrode is provided in an electrostatic chuck, a high capacitance can be achieved by reducing the thickness of the dielectric portion between the substrate and the bias electrode, thereby reducing dielectric loss.

[0010] Here, for example, when etching is performed as a plasma process, the above-mentioned high capacitance contributes to an improvement in the etching rate. Furthermore, when a high capacitance is realized, for example, when a rectangular wave bias power is supplied, etching characteristics such as line width and selectivity are also improved. Therefore, a high capacitance is useful for plasma processing.

[0011] However, the thickness of the dielectric portion cannot be made sufficiently small from the viewpoint of withstand voltage, which limits the increase in capacitance, and therefore there is room for improvement in power efficiency in plasma processing.

[0012] The technology disclosed herein improves power efficiency in a plasma processing apparatus. Hereinafter, a plasma processing apparatus, an electrostatic chuck, and a plasma processing method according to the present embodiment will be described with reference to the drawings. Note that in this specification and the drawings, elements having substantially the same functional configurations are designated by the same reference numerals, and redundant description will be omitted.

[0013] <Plasma processing system> FIG. 1 is a diagram illustrating an exemplary configuration of a plasma processing system. In one embodiment, the plasma processing system includes a plasma processing device 1 and a control unit 2. The plasma processing system is an example of a substrate processing system, and the plasma processing device 1 is an example of a substrate processing device. The plasma processing device 1 includes a plasma processing chamber 10, a substrate support 11, and a plasma generation unit 12. The plasma processing chamber 10 has a plasma processing space. The plasma processing chamber 10 also has at least one gas supply port for supplying at least one processing gas to the plasma processing space and at least one gas exhaust port for exhausting gas from the plasma processing space. The gas supply port is connected to a gas supply unit 20 (described later), and the gas exhaust port is connected to an exhaust system 40 (described later). The substrate support 11 is disposed in the plasma processing space and has a substrate support surface for supporting a substrate.

[0014] The plasma generating unit 12 is configured to generate plasma from at least one processing gas supplied into the plasma processing space. The plasma formed in the plasma processing space may be capacitively coupled plasma (CCP), inductively coupled plasma (ICP), electron-cyclotron-resonance plasma (ECR plasma), helicon wave plasma (HWP), or surface wave plasma (SWP). Various types of plasma generating units may be used, including alternating current (AC) plasma generating units and direct current (DC) plasma generating units. In one embodiment, the AC signal (AC power) used in the AC plasma generating unit has a frequency in the range of 100 kHz to 10 GHz. Therefore, the AC signal includes a radio frequency (RF) signal and a microwave signal. In one embodiment, the RF signal has a frequency in the range of 100 kHz to 150 MHz.

[0015] The control unit 2 processes computer-executable instructions that cause the plasma processing apparatus 1 to perform various processes described in this disclosure. The control unit 2 may be configured to control each element of the plasma processing apparatus 1 to perform various processes described herein. In one embodiment, part or all of the control unit 2 may be included in the plasma processing apparatus 1. The control unit 2 may include a processing unit 2a1, a storage unit 2a2, and a communication interface 2a3. The control unit 2 may be implemented by, for example, a computer 2a. The processing unit 2a1 may be configured to read a program from the storage unit 2a2 and execute the read program to perform various control operations. The program may be stored in the storage unit 2a2 in advance or may be acquired via a medium when needed. The acquired program is stored in the storage unit 2a2 and read from the storage unit 2a2 by the processing unit 2a1 for execution. The medium may be various storage media readable by the computer 2a or a communication line connected to the communication interface 2a3. The processing unit 2a1 may be a CPU (Central Processing Unit). The storage unit 2a2 may include a random access memory (RAM), a read only memory (ROM), a hard disk drive (HDD), a solid state drive (SSD), or a combination thereof. The communication interface 2a3 may communicate with the plasma processing apparatus 1 via a communication line such as a local area network (LAN).

[0016] <Plasma processing equipment> The following describes a configuration example of a capacitively coupled plasma processing apparatus as an example of the plasma processing apparatus 1. Fig. 2 is a diagram for explaining a configuration example of a capacitively coupled plasma processing apparatus.

[0017] The capacitively coupled plasma processing apparatus 1 includes a plasma processing chamber 10, a gas supply 20, a power supply 30, and an exhaust system 40. The plasma processing apparatus 1 also includes a substrate support 11 and a gas inlet. The gas inlet is configured to introduce at least one process gas into the plasma processing chamber 10. The gas inlet includes a showerhead 13. The substrate support 11 is disposed within the plasma processing chamber 10. The showerhead 13 is disposed above the substrate support 11. In one embodiment, the showerhead 13 forms at least a portion of the ceiling of the plasma processing chamber 10. The plasma processing chamber 10 has a plasma processing space 10s defined by the showerhead 13, a sidewall 10a of the plasma processing chamber 10, and the substrate support 11. The plasma processing chamber 10 is grounded. The showerhead 13 and the substrate support 11 are electrically insulated from the housing of the plasma processing chamber 10.

[0018] The substrate support part 11 includes a main body part 111 and an edge ring 112. The main body part 111 has a substrate mounting surface 111a which is a central region for mounting and supporting the substrate W, and an edge ring mounting surface 111b which is an annular region for mounting and supporting the edge ring 112. A wafer is an example of a substrate W. The edge ring mounting surface 111b of the main body part 111 surrounds the substrate mounting surface 111a of the main body part 111 in a plan view. The substrate W is mounted on the substrate mounting surface 111a of the main body part 111, and the edge ring 112 is mounted on the edge ring mounting surface 111b of the main body part 111 so as to surround the substrate W on the substrate mounting surface 111a of the main body part 111.

[0019] In one embodiment, the main body 111 includes a base 1110 and an electrostatic chuck 1111. The base 1110 includes a conductive member. The conductive member of the base 1110 can function as a lower electrode. The electrostatic chuck 1111 is disposed on the base 1110. The electrostatic chuck 1111 includes a substrate mounting portion 1111a and an edge ring mounting portion 1111b. The substrate mounting portion 1111a and the edge ring mounting portion 1111b constitute the dielectric portion in the present disclosure and are formed of, for example, ceramic. The substrate mounting portion 1111a has a substrate mounting surface 111a and mounts a substrate W thereon. The edge ring mounting portion 1111b has an edge ring mounting surface 111b and mounts the edge ring thereon. The edge ring mounting portion 1111b is disposed to surround the substrate mounting portion 1111a. The edge ring mounting surface 111b is formed at a position lower than the substrate mounting surface 111a.

[0020] Note that the edge ring mounting surface 111b may be provided on another member surrounding the electrostatic chuck 1111, such as an annular electrostatic chuck or an annular insulating member. In this case, the edge ring 112 may be disposed on the annular electrostatic chuck or the annular insulating member, or may be disposed on both the electrostatic chuck 1111 and the annular insulating member.

[0021] The edge ring 112 includes one or more annular members. The edge ring 112 is made of a conductive material or an insulating material. At least one cover ring may be provided on the outside of the edge ring 112 so as to surround the edge ring 112. The cover ring is made of an insulating material.

[0022] The substrate support 11 may also include a temperature adjustment module configured to adjust at least one of the electrostatic chuck 1111, the edge ring 112, and the substrate W to a target temperature. The temperature adjustment module may include a heater, a heat transfer medium, a flow path 1110a, or a combination thereof. A heat transfer fluid such as brine or gas flows through the flow path 1110a. In one embodiment, the flow path 1110a is formed in the base 1110, and one or more heaters are disposed in the substrate mounting portion 1111a and the edge ring mounting portion 1111b of the electrostatic chuck 1111. The substrate support 11 may also include a heat transfer gas supply unit 50 configured to supply a heat transfer gas to a gap between the back surface of the substrate W and the substrate mounting surface 111a (hereinafter referred to as a "first heat transfer space") or a gap between the back surface of the edge ring 112 and the edge ring mounting surface 111b (hereinafter referred to as a "second heat transfer space"). The heat transfer gas supply unit 50 supplies the heat transfer gas to the first and second heat transfer spaces via the heat transfer gas supply path 51.

[0023] A first lifter 60 that raises and lowers the substrate W relative to the substrate placement part 1111a is provided below the substrate support part 11. The first lifter 60 has first lifter pins 61 and a drive part 62. The first lifter pins 61 are connected to the drive part 62, so that they can be raised and lowered.

[0024] In addition, a second lifter 70 that raises and lowers the edge ring 112 relative to the edge ring mounting portion 1111b is provided below the substrate support portion 11. The second lifter 70 has second lifter pins 71 and a drive unit 72. The second lifter pins 71 are connected to the drive unit 72, so that they can be raised and lowered.

[0025] The showerhead 13 is configured to introduce at least one processing gas from the gas supply unit 20 into the plasma processing space 10s. The showerhead 13 has at least one gas supply port 13a, at least one gas diffusion chamber 13b, and multiple gas inlets 13c. The processing gas supplied to the gas supply port 13a passes through the gas diffusion chamber 13b and is introduced into the plasma processing space 10s from the multiple gas inlets 13c. The showerhead 13 also includes at least one upper electrode. In addition to the showerhead 13, the gas introduction unit may also include one or more side gas injectors (SGIs) attached to one or more openings formed in the sidewall 10a.

[0026] The gas supply unit 20 may include at least one gas source 21 and at least one flow controller 22. In one embodiment, the gas supply unit 20 is configured to supply at least one process gas from a corresponding gas source 21 to the showerhead 13 via a corresponding flow controller 22. Each flow controller 22 may include, for example, a mass flow controller or a pressure-controlled flow controller. Additionally, the gas supply unit 20 may include at least one flow modulation device that modulates or pulses the flow rate of the at least one process gas.

[0027] The power supply 30 includes a source RF power supply 31 as an example of a plasma generation power supply, a bias RF power supply 32 as an example of a bias power supply, and an adsorption power supply 33. The source RF power supply 31 and the bias RF power supply 32 are coupled to the plasma processing chamber 10 via at least one impedance matching circuit. The adsorption power supply 33 is coupled to the plasma processing chamber 10.

[0028] The source RF power supply 31 is electrically connected to at least one lower electrode and / or at least one upper electrode via at least one impedance matching circuit and is configured to generate a source RF signal (source RF power) for plasma generation. In one embodiment, the source RF signal has a frequency in the range of 10 MHz to 150 MHz. In one embodiment, the source RF power supply 31 may be configured to generate multiple source RF signals having different frequencies. The generated one or more source RF signals are supplied to at least one lower electrode and / or at least one upper electrode. This generates plasma from at least one processing gas supplied to the plasma processing space 10s. Therefore, the source RF power supply 31 can function as at least a part of the plasma generation unit 12.

[0029] In one embodiment, the bias RF power supply 32 includes a first bias RF power supply 32a and a second bias RF power supply 32b. The first bias RF power supply 32a is electrically connected to a first electrode layer 210 (described later) via at least one impedance matching circuit and configured to generate a first bias RF signal (first bias RF power). The second bias RF power supply 32b is electrically connected to a second electrode layer 212 (described later) via at least one impedance matching circuit and configured to generate a second bias RF signal (second bias RF power). The frequencies of the first and second bias RF signals may be the same as or different from the frequency of the source RF signal. In one embodiment, the first and second bias RF signals have frequencies lower than the frequency of the source RF signal. In one embodiment, the first and second bias RF signals have frequencies within a range of 100 kHz to 60 MHz. In one embodiment, the first bias RF power supply 32a and the second bias RF power supply 32b may be configured to generate multiple bias RF signals having different frequencies. One or more first bias RF signals generated by the first bias RF power supply 32a are supplied to a first electrode layer 210 (described later), and one or more second bias RF signals generated by the second bias RF power supply 32b are supplied to a second electrode layer 212 (described later). This generates a bias potential on the substrate W, making it possible to attract ion components in the formed plasma to the substrate W. In various embodiments, at least one of the source RF signal and the first and second bias RF signals may be pulsed.

[0030] In one embodiment, the attraction power supply 33 includes a first attraction power supply 33a, a second attraction power supply 33b, a third attraction power supply 33c, and a fourth attraction power supply 33d.

[0031] The first attraction power supply 33a is electrically connected to a first electrode layer 210 (described later) and configured to generate a first attraction DC signal (first attraction power). The generated first attraction DC signal is supplied to the first electrode layer 210 (described later). The second attraction power supply 33b is electrically connected to a first attraction electrode layer 211 (described later) and configured to generate a second attraction DC signal (second attraction power). The generated second attraction DC signal is supplied to the first attraction electrode layer 211 (described later). The substrate W can be attracted and held on the substrate mounting surface 111a by electrostatic forces generated by the first and second attraction powers. Note that the first attraction power supply 33a may be omitted.

[0032] The third attraction power supply 33c is electrically connected to a second electrode layer 212 (described later) and configured to generate a third attraction DC signal (third attraction power). The generated third attraction DC signal is supplied to the second electrode layer 212 (described later). The fourth attraction power supply 33d is electrically connected to a second attraction electrode layer 213 (described later) and configured to generate a fourth attraction DC signal (fourth attraction power). The generated fourth attraction DC signal is supplied to the second attraction electrode layer 213 (described later). Electrostatic forces generated by the third and fourth attraction powers can attract and hold the edge ring 112 to the edge ring mounting surface 111b. Note that the third attraction power supply 33c may be omitted.

[0033] The power supply 30 may also include a DC power supply 34 coupled to the plasma processing chamber 10. The DC power supply 34 includes a first DC power supply 34a and a second DC power supply 34b. In one embodiment, the first DC power supply 34a is electrically connected to the at least one lower electrode and configured to generate a first DC signal. The generated first DC signal is applied to the at least one lower electrode. In one embodiment, the second DC power supply 34b is electrically connected to the at least one upper electrode and configured to generate a second DC signal. The generated second DC signal is applied to the at least one upper electrode.

[0034] In various embodiments, the first and second DC signals may be pulsed. In this case, a sequence of voltage pulses is applied to at least one lower electrode and / or at least one upper electrode. The voltage pulses may have a rectangular, trapezoidal, triangular, or combination thereof. In one embodiment, a waveform generator for generating a sequence of voltage pulses from the DC signal is connected between the first DC power supply 34a and at least one lower electrode. Therefore, the first DC power supply 34a and the waveform generator constitute a voltage pulse generator. When the second DC power supply 34b and the waveform generator constitute a voltage pulse generator, the voltage pulse generator is connected to at least one upper electrode. The voltage pulses may have positive or negative polarity. Furthermore, the sequence of voltage pulses may include one or more positive voltage pulses and one or more negative voltage pulses within one cycle. The first and second DC power supplies 34a and 34b may be provided in addition to the source RF power supply 31 and the bias RF power supply 32, or may be provided instead of the bias RF power supply 32.

[0035] The exhaust system 40 may be connected to, for example, a gas exhaust port 10e provided at the bottom of the plasma processing chamber 10. The exhaust system 40 may include a pressure regulating valve and a vacuum pump. The pressure regulating valve regulates the pressure in the plasma processing space 10s. The vacuum pump may include a turbomolecular pump, a dry pump, or a combination thereof.

[0036] <Substrate support part> Next, the configuration of the above-mentioned substrate support part 11 will be described with reference to Fig. 3. Fig. 3 is a cross-sectional view showing an outline of an example configuration of the substrate support part 11. In Fig. 3, the right side of the central dotted line mainly shows the electrode layer, and the left side of the central dotted line mainly shows the through-holes.

[0037] The substrate mounting surface 111a of the substrate mounting part 1111a is provided with a seal band 200 and a plurality of dots 201. Note that the dots 201 are not shown in FIG. 3. The seal band 200 is formed in a ring shape on the outer periphery of the substrate mounting surface 111a. The seal band 200 seals a first heat transfer space 202 between the back surface of the substrate W and the substrate mounting surface 111a. The plurality of dots 201 are arranged inside the seal band 200. Each dot 201 has a cylindrical shape. The seal band 200 and the plurality of dots 201 have flat upper surfaces at the same height and come into contact with the substrate W when the substrate W is mounted on the substrate mounting surface 111a.

[0038] The edge ring mounting surface 111b of the edge ring mounting portion 1111b is provided with seal bands 203. The seal bands 203 are formed in an annular shape on the inner and outer sides of the edge ring mounting surface 111b. The seal bands 203 seal a second heat transfer space 204 between the back surface of the edge ring 112 and the edge ring mounting surface 111b. The seal bands 203 have a flat upper surface that comes into contact with the edge ring 112 when the edge ring 112 is mounted on the edge ring mounting surface 111b.

[0039] A first electrode layer 210 is formed on the substrate mounting surface 111a of the substrate mounting part 1111a. That is, when the substrate W is mounted on the substrate mounting surface 111a, the first electrode layer 210 comes into contact with the substrate W and is electrically connected to the substrate W. A first bias RF power supply 32a and a first attraction power supply 33a are electrically connected to the first electrode layer 210. Note that, in the example of FIG. 3, the first electrode layer 210 is formed over the entire surface of the substrate mounting surface 111a for ease of understanding, but in practice it is formed in a desired pattern. The same applies to the examples of FIGS. 4, 7 to 12, and 18 below. The specific arrangement of this first electrode layer 210 will be described later. The first electrode layer 210 corresponds to the first bias electrode layer in this disclosure.

[0040] A first attraction electrode layer 211 is formed in the substrate placement portion 1111a below the first electrode layer 210. The first attraction electrode layer 211 is electrically connected to a second attraction power source 33b.

[0041] The first electrode layer 210, the first attraction electrode layer 211, the first bias RF power supply 32a, the first attraction power supply 33a, and the second attraction power supply 33b constitute a first power supply unit in the present disclosure that supplies power to the substrate placement part 1111a. The first electrode layer 210 and the first attraction electrode layer 211 constitute a first electrode unit in the present disclosure that is provided on the substrate placement part 1111a.

[0042] A second electrode layer 212 is formed on the edge ring mounting surface 111b of the edge ring mounting portion 1111b. That is, when the edge ring 112 is mounted on the edge ring mounting surface 111b, the second electrode layer 212 comes into contact with the edge ring 112 and is electrically connected to it. The second bias RF power supply 32b and the third attraction power supply 33c are electrically connected to the second electrode layer 212. Note that, for ease of understanding, in the example of FIG. 3, the second electrode layer 212 is formed over the entire surface of the edge ring mounting surface 111b; however, in practice, the second electrode layer 212 is formed in a desired pattern. This also applies to the examples of FIGS. 4, 7 to 12, and 18. The specific arrangement of this second electrode layer 212 will be described later. The second electrode layer 212 corresponds to the second bias electrode layer in this disclosure.

[0043] A second attraction electrode layer 213 is formed in the edge ring mounting portion 1111b below the second electrode layer 212. The second attraction electrode layer 213 is electrically connected to a fourth attraction power source 33d.

[0044] The second electrode layer 212, the second attraction electrode layer 213, the second bias RF power supply 32b, the third attraction power supply 33c, and the fourth attraction power supply 33d constitute a second power supply unit in the present disclosure that supplies power to the edge ring mounting unit 1111b. The second electrode layer 212 and the second attraction electrode layer 213 constitute a second electrode unit in the present disclosure that is provided on the edge ring mounting unit 1111b.

[0045] The base 1110 is formed with through holes 220 for inserting the power supply lines of the above-mentioned power sources 32a to 32b and 33a to 33d. An insulating film 221 is formed on the inner surface of the through hole 220. The material of the insulating film 221 is not particularly limited, but glass is used, for example. In the example of FIG. 3, the insulating film 221 is formed in the through hole 220, but the material is not limited to this. An insulating sleeve made of ceramics or the like may be inserted into the through hole 220.

[0046] The substrate mounting portion 1111a has first heat transfer gas supply holes 230a, which are an example of first through holes. The first heat transfer gas supply holes 230a penetrate from the substrate mounting surface 111a in the thickness direction. The base 1110 also has first heat transfer gas supply holes 230b. The first heat transfer gas supply holes 230a and 230b are continuous and are included in the heat transfer gas supply path 51 described above. The first heat transfer gas supply holes 230a and 230b communicate with the heat transfer gas supply unit 50. In the illustrated example, the first heat transfer gas supply hole 230a extends in the thickness direction of the substrate mounting portion 1111a, but the path of the first heat transfer gas supply hole 230a is arbitrary and may include, for example, a horizontal path. The first heat transfer gas supply holes 230b penetrate the base 1110, but the path of the first heat transfer gas supply holes 230b is arbitrary. The heat transfer gas supplied from the heat transfer gas supply unit 50 is supplied to the first heat transfer space 202 between the back surface of the substrate W and the substrate mounting surface 111a through the first heat transfer gas supply holes 230a and 230b.

[0047] Furthermore, a first pin insertion hole 231a, which is an example of a first through hole, is formed in the substrate mounting portion 1111a. The first pin insertion hole 231a penetrates from the substrate mounting surface 111a in the thickness direction. A first pin insertion hole 231b is also formed in the base 1110. The first pin insertion hole 231b penetrates the base 1110 in the thickness direction. The first pin insertion hole 231a and the first pin insertion hole 231b are continuous, and a first lifter pin 61 is inserted through the first pin insertion holes 231a and 231b.

[0048] A first conductive film 232 that is electrically connected to the first electrode layer 210 is formed on the inner surface of the first heat transfer gas supply hole 230a. A first conductive film 232 that is electrically connected to the first electrode layer 210 is also formed on the inner surface of the first pin insertion hole 231a. These first conductive films 232 are short-circuited and electrically connected to the base 1110. Note that no conductive film is formed on the inner surface of the first heat transfer gas supply hole 230b and the first pin insertion hole 231b.

[0049] Second heat transfer gas supply holes 233a, which are an example of second through holes, are formed in the edge ring mounting surface 1111b. The second heat transfer gas supply holes 233a penetrate from the edge ring mounting surface 111b in the thickness direction. Second heat transfer gas supply holes 233b are also formed in the base 1110. The second heat transfer gas supply holes 233a and 233b are continuous and are included in the heat transfer gas supply path 51 described above. The second heat transfer gas supply holes 233a and 233b communicate with the heat transfer gas supply unit 50. In the illustrated example, the second heat transfer gas supply hole 233a extends in the thickness direction of the edge ring mounting surface 1111b, but the path of the second heat transfer gas supply hole 233a is arbitrary and may include, for example, a horizontal path. The second heat transfer gas supply holes 233b penetrate the base 1110, but the path of the second heat transfer gas supply holes 233b is arbitrary. The heat transfer gas supplied from the heat transfer gas supply unit 50 is supplied to the second heat transfer space 204 between the back surface of the edge ring 112 and the edge ring mounting surface 111b through the second heat transfer gas supply holes 233a and 233b.

[0050] Furthermore, a second pin insertion hole 234a, which is an example of a second through hole, is formed in the edge ring mounting surface 1111b. The second pin insertion hole 234a penetrates from the edge ring mounting surface 111b in the thickness direction. A second pin insertion hole 234b is also formed in the base 1110. The second pin insertion hole 234b penetrates the base 1110 in the thickness direction. The second pin insertion hole 234a and the second pin insertion hole 234b are continuous, and a second lifter pin 71 is inserted through the second pin insertion holes 234a and 234b.

[0051] An insulating film 235 is formed on the inner surface of the second heat transfer gas supply hole 233b and the inner surface of the second pin insertion hole 234b. A second conductive film 236 that is electrically connected to the second electrode layer 212 is formed on the inner surface of the second heat transfer gas supply hole 233a and the second heat transfer gas supply hole 233b (insulating film 235) from the upper end of the second heat transfer gas supply hole 233a to the lower end of the second heat transfer gas supply hole 233b. Similarly, a second conductive film 236 that is electrically connected to the second electrode layer 212 is formed on the inner surface of the second pin insertion hole 234a and the second pin insertion hole 234b (insulating film 235) from the upper end of the second pin insertion hole 234a to the lower end of the second pin insertion hole 234b. 3, the insulating film 235 is formed in the second heat transfer gas supply hole 233a and the second pin insertion hole 234b, but this is not limiting. An insulating sleeve made of ceramic or the like may be inserted into the second heat transfer gas supply hole 233a and the second pin insertion hole 234b.

[0052] <Direct supply of bias RF power (measure to improve power efficiency)> In this embodiment, a first electrode layer 210 is provided on the substrate mounting surface 111a of the substrate mounting part 1111a, and the first electrode layer 210 and the substrate W are in contact with each other. A first bias RF power supply 32a is connected to the first electrode layer 210. Therefore, the first bias RF power is directly supplied (electrically conducted) from the first bias RF power supply 32a to the substrate W via the first electrode layer 210. Therefore, no dielectric loss occurs, and power loss can be reduced, thereby improving power efficiency in plasma processing.

[0053] Furthermore, a second electrode layer 212 is provided on the edge ring mounting surface 111b of the edge ring mounting portion 1111b, and the second electrode layer 212 and the edge ring 112 are in contact with each other. A second bias RF power supply 32b is connected to the second electrode layer 212. Therefore, the second bias RF power is directly supplied (electrically conducted) to the edge ring 112 from the second bias RF power supply 32b via the second electrode layer 212. Therefore, no dielectric loss occurs, and power loss can be reduced, thereby improving power efficiency in plasma processing.

[0054] Note that, because the currents of the first and second bias RF powers flow on the surface of the first electrode layer 210 and the surface of the second electrode layer 212, respectively, due to the skin effect, these first electrode layer 210 and second electrode layer 212 may each have a thin structure such as a conductive film. Furthermore, the first and second electrode layers 210, 212, such as conductive films, may be manufactured by any method. For example, the first and second electrode layers 210, 212 may be manufactured by performing surface treatment such as plating. Furthermore, layered conductive ceramics or the like may be stacked, or plate-shaped conductive ceramics or the like may be bonded together.

[0055] Furthermore, although the plasma processing apparatus 1 of this embodiment includes both the first electrode layer 210 and the second electrode layer 212, either one of them may be omitted. For example, if the first electrode layer 210 is omitted and only the second electrode layer 212 is provided, the first bias RF power supply 32a is connected to a bias electrode provided in the substrate mounting portion 1111a instead of the first electrode layer 210, and the first attraction power supply 33a is omitted. For example, if the second electrode layer 212 is omitted and only the first electrode layer 210 is provided, the second bias RF power supply 32b is connected to a bias electrode provided in the edge ring mounting portion 1111b instead of the second electrode layer 212, and the third attraction power supply 33c is omitted.

[0056] (Residual adsorption suppression) In a conventional electrostatic chuck, an electrode is provided inside the electrostatic chuck, so that the potential of the substrate cannot be directly controlled. As a result, a residual attracting force due to residual charge may be generated on the substrate when the substrate is released from the electrostatic chuck. In this regard, according to the present embodiment, the first electrode layer 210 and the substrate W are electrically connected, so that the potential of the substrate W can be directly controlled. Furthermore, for example, when the potential of the substrate W is connected to a ground potential, both the first electrode layer 210 and the substrate W are at the ground potential, and no residual charge is generated between the first electrode layer 210 and the substrate W. Therefore, the residual attracting force acting when the substrate W is released from the substrate mounting portion 1111a of the electrostatic chuck 1111 can be reduced.

[0057] Similarly, since the second electrode layer 212 and the edge ring 112 are electrically connected, the potential of the edge ring 112 can be directly controlled. When the potential of the edge ring 112 is connected to the ground potential, for example, both the second electrode layer 212 and the edge ring 112 are at the ground potential, and no residual charge is generated between the second electrode layer 212 and the edge ring 112. Therefore, the residual adsorptive force acting when the edge ring 112 is detached from the edge ring mounting portion 1111b of the electrostatic chuck 1111 can be reduced.

[0058] (Edge ring adsorption when plasma is not generated) The edge ring 112 needs to be attracted and held on the edge ring support portion 1111b of the electrostatic chuck 1111 not only when plasma is generated but also when plasma is not generated. In a conventional electrostatic chuck, a bipolar attracting electrode is provided inside the electrostatic chuck to attract and hold the edge ring when plasma is not generated. In this regard, in the present embodiment, a third attracting power supply 33c is connected to the second electrode layer 212, and a fourth attracting power supply 33d is connected to the second attracting electrode layer 213. Therefore, the edge ring 112 can be attracted and held by the third attracting power supplied to the second electrode layer 212 and the fourth attracting power supplied to the second attracting electrode layer 213, even when plasma is not generated.

[0059] (Independent control of second bias RF power) When the first bias RF power is directly supplied to the substrate W, a sheath is formed to cover the substrate W. At this time, as shown in Fig. 4(a), ions are incident on the edge region of the substrate W from a direction that is not perpendicular to the substrate mounting surface 111a. Specifically, for example, when the edge ring 112 is worn down and its thickness decreases, the thickness of the sheath SH decreases in the edge region of the substrate W, and the shape of the sheath SH changes to a downward convex shape.

[0060] Therefore, in order to suppress the oblique incidence of ions, it is necessary to supply a second bias RF power to the edge ring 112 as shown in FIG. 4(b) to lift and flatten the sheath SH in the edge region of the substrate W.

[0061] In this embodiment, the second bias RF power can be independently controlled via the second electrode layer 212, and therefore the tilt angle of the substrate W can be controlled. In other words, the second bias RF power functions as a tilt control knob. The tilt angle is the inclination (angle) of a recess formed by etching in the edge region of the substrate W with respect to the thickness direction of the substrate W. The tilt angle is approximately the same as the inclination (ion incident angle) of the direction of ion incidence on the edge region of the substrate W with respect to the vertical direction.

[0062] In particular, when first and second rectangular-wave bias powers are used instead of first and second bias RF powers, it is useful to independently control the first and second rectangular-wave bias powers. The first rectangular-wave bias power is supplied to the substrate W, for example, from the first DC power supply 34a via the first electrode layer 210. The second rectangular-wave bias power is supplied to the edge ring 112, for example, from the second DC power supply 34b via the second electrode layer 212. In the case of rectangular waves, the first rectangular-wave bias power and the second rectangular-wave bias power have short and steep rise and fall times. Therefore, even a slight difference in the supply timing of the first rectangular-wave bias power and the second rectangular-wave bias power easily creates a potential difference between the substrate W and the edge ring 112. In other words, in the case of rectangular waves, it is important to synchronize the potential of the substrate W and the potential of the edge ring 112 in order to control the tilt angle. In this regard, in the present embodiment, by independently controlling the first and second rectangular wave bias powers, the supply timing of the first and second rectangular wave bias powers can be appropriately synchronized, and the tilt angle can be appropriately controlled.

[0063] When the second bias RF power is independently controlled, the power supply line for supplying the second bias RF power to the second electrode layer 212 needs to be insulated from the power supply lines for the first bias RF power, etc. and from the base 1110. Therefore, as described above, an insulating film 221 is formed on the inner surface of the through hole 220 through which the power supply line for the second bias RF power passes.

[0064] (Ion attraction control by square wave bias power) Here, when the first and second rectangular wave bias powers are used as the bias powers as described above, the rise and fall times of the rectangular waves are steep, so that a large bias voltage continues to be applied to the substrate W and the edge ring 112 for a long period of time. Therefore, ions are accelerated and incident on the substrate W, which has the advantage of improving the plasma processing rate, such as the etching rate.

[0065] Furthermore, in this embodiment, there is no effect of the capacitance between the substrate W and the first electrode layer 210 and between the edge ring 112 and the second electrode layer 212, so the first and second rectangular wave bias powers can be supplied to the substrate W and the edge ring 112 in an ideal state. Conventionally, as described above, improvements have been made to increase the capacitance between the substrate and the bias electrode. This is to suppress a decrease in the etching rate due to a decrease in the potential difference between the substrate and the plasma. In conventional configurations, the bias electrode is provided inside the electrostatic chuck, so capacitance occurs between the substrate and the bias electrode. If the capacitance is small, ions are attracted to the substrate, which rapidly decreases the potential difference between the substrate and the plasma, resulting in a rapid decrease in the etching rate. Therefore, improvements have been made to suppress a decrease in the etching rate by increasing the capacitance and lengthening the time it takes for the potential difference between the substrate and the plasma to decrease. On the other hand, in this embodiment, the first electrode layer 210 is formed on the substrate mounting surface 111a, and the second electrode layer 212 is formed on the edge ring mounting surface 111b, so there is no effect of the capacitance between the substrate W and the first electrode layer 210 and between the edge ring 112 and the second electrode layer 212. Therefore, the first and second rectangular wave bias powers can be supplied to the substrate W and the edge ring 112 in an ideal state, which has the advantage of improving the plasma processing rate, such as the etching rate.

[0066] <Measures to prevent reduction in chucking force due to direct power supply> For example, a conventional Coulomb-type electrostatic chuck attracts a substrate as follows: First, the dielectric portion of the electrostatic chuck is polarized by a voltage applied to the attracting electrode inside the electrostatic chuck. For example, if the attracting electrode is controlled to a positive potential, a negative charge is biased toward the attracting electrode side of the electrostatic chuck, and a positive charge is biased toward the front side (substrate side). Next, electrons are supplied from the plasma to the substrate due to the biased charge, and the substrate becomes negatively charged. Then, a Coulomb force acts due to the potential difference between the front side of the electrostatic chuck (positive charge) and the back side of the substrate (negative charge), and the substrate is attracted to the electrostatic chuck.

[0067] In this regard, when the first electrode layer 210 is formed on the substrate mounting surface 111a of the electrostatic chuck 1111 as in this embodiment, a pair of charges is formed between the substrate mounting surface 111a and the first electrode layer 210, and the potential difference between the substrate mounting surface 111a and the substrate W disappears. As a result, Coulomb force does not act, and the chucking force on the first electrode layer 210 decreases. For the same reason, when the second electrode layer 212 is formed on the edge ring mounting surface 111b of the electrostatic chuck 1111, the chucking force on the second electrode layer 212 decreases.

[0068] (Adjusting the arrangement of the first and second electrode layers) To prevent this decrease in the chucking force, it is preferable that the first electrode layer 210 is not provided over the entire surface of the substrate mounting surface 111a. More specifically, it is preferable that the first electrode layer 210 has a region that does not overlap with the first chucking electrode layer 211 in a plan view. In this case, in the region, a Coulomb force is applied by the second chucking power supplied to the first chucking electrode layer 211, so that the substrate W can be appropriately chucking and held on the substrate mounting surface 111a.

[0069] Furthermore, from the viewpoint of suppressing a decrease in the chucking force, it is preferable that the rear surface of the substrate W and the substrate mounting surface 111a are in contact around the periphery of the first electrode layer 210 that contacts the substrate W. For example, as shown in Fig. 5, when the first electrode layer 210 is provided on the upper surface of the seal band 200 on the substrate mounting surface 111a, the first electrode layer 210 is provided in the center of the upper surface of the seal band 200 in a side view. In this case, Coulomb force acts on the inner and outer circumferential sides of the first electrode layer 210 on the upper surface of the seal band 200, i.e., on the regions where the first electrode layer 210 is not provided.

[0070] Specifically, when the second attracting power is first supplied to the first attracting electrode layer 211, negative charges are biased toward the first attracting electrode layer 211 side of the dielectric portion of the electrostatic chuck 1111 in the seal band 200, and positive charges are biased toward the upper surface side (substrate W side) of the dielectric portion of the electrostatic chuck 1111. Next, electrons are supplied from the plasma to the substrate W due to the biased charges, and the substrate W becomes negatively charged. As a result, a Coulomb force occurs due to the potential difference between the upper surface of the seal band 200 (positive charges) and the back surface of the substrate W (negative charges), and the substrate W is attracted to the seal band 200. In this case, the first electrode layer 210 and the substrate W come into contact with each other on the upper surface of the seal band 200, ensuring reliable electrical contact and further ensuring sealing of the first heat transfer space 202.

[0071] Similarly, to prevent a decrease in the chucking force on the second electrode layer 212, it is preferable that the second electrode layer 212 is not provided over the entire surface of the edge ring mounting surface 111b. More specifically, it is preferable that the second electrode layer 212 has a region that does not overlap with the second attraction electrode layer 213 in a plan view. In this case, a Coulomb force is applied in the region by the fourth attraction power supplied to the second attraction electrode layer 213, and the edge ring 112 can be appropriately attracted and held on the edge ring mounting surface 111b.

[0072] Furthermore, from the viewpoint of suppressing a decrease in chucking force, it is preferable that the back surface of the edge ring 112 and the edge ring mounting surface 111b contact each other around the periphery of the second electrode layer 212 that contacts the edge ring 112. For example, when the second electrode layer 212 is provided on the upper surface of the seal band 203 on the edge ring mounting surface 111b, the second electrode layer 212 is provided in the center of the upper surface of the seal band 203 in a side view. In this case, the second electrode layer 212 and the edge ring 112 contact each other on the upper surface of the seal band 203, ensuring reliable electrical contact and further ensuring sealing of the second heat transfer space 204.

[0073] It should be noted that this embodiment can be applied even if the electrostatic chuck 1111 is a JR (Johnsen-Rahbek) type.

[0074] (Increased chucking voltage and simplified chucking power supply) In this embodiment, a first attraction power supply 33a is connected to the first electrode layer 210, and a second attraction power supply 33b is connected to the first attraction electrode layer 211. In this way, in the circuit shown in Fig. 6, a first attraction power is supplied from the first attraction power supply 33a to the first electrode layer 210, and a first attraction voltage A1 is applied relative to the ground potential. Furthermore, a second attraction power is supplied from the second attraction power supply 33b to the first attraction electrode layer 211, and a second attraction voltage A2 is applied relative to the ground potential. For example, if the first attraction voltage A1 is +3 kV and the second attraction voltage A2 is -3 kV, a voltage of 6 kV (= |A1| + |A2|) can be generated between the substrate W and the first attraction electrode layer 211. Therefore, by using two simple power supplies, the first suction power supply 33a and the second suction power supply 33b, it is possible to increase the suction force for the substrate W. Furthermore, since the suction force can be increased in this manner, it is possible to reduce leakage of heat transfer gas from the first heat transfer space 202, and further to reduce the temperature of the substrate W due to an increase in the pressure of the heat transfer gas, thereby making it possible to improve the in-plane temperature uniformity of the substrate W.

[0075] Similarly, a third attraction power supply 33c is connected to the second electrode layer 212, and a fourth attraction power supply 33d is connected to the second attraction electrode layer 213. In this case, a third attraction power supply 33c is supplied to the second electrode layer 212, and a third attraction voltage A3 is applied relative to the ground potential. Furthermore, a fourth attraction power supply 33d is supplied to the second attraction electrode layer 213, and a fourth attraction voltage A4 is applied relative to the ground potential. This makes it possible to generate a voltage that is the sum of |A3| and |A4| across the edge ring 112 and the second attraction electrode layer 213. Therefore, by using two simple power supplies, the third attraction power supply 33c and the fourth attraction power supply 33d, the attraction force of the edge ring 112 can be increased.

[0076] In this embodiment, a first bias RF power supply 32a and a first attraction power supply 33a are connected to the first electrode layer 210, and a first bias RF power and a first attraction power are superimposed and supplied during processing. A second bias RF power supply 32b and a third attraction power supply 33c are connected to the second electrode layer 212, and a second bias RF power and a third attraction power are superimposed and supplied.

[0077] <Countermeasures against abnormal discharge> In order to improve productivity of plasma processing, plasma processing apparatuses are required to be able to handle high power. For example, bias power, such as bias RF power, is being increased. Furthermore, increasing the attracting power is also considered as a countermeasure against a decrease in attracting force that occurs during the formation of the first and second electrode layers 210 and 212. Under such high-power processes, there is a concern that abnormal discharge may occur in through holes, such as the first heat transfer gas supply hole 230a, the first pin insertion hole 231a, the second heat transfer gas supply hole 233a, and the second pin insertion hole 234a, of the electrostatic chuck 1111.

[0078] (Formation of First and Second Conductive Films) In this embodiment, a first conductive film 232 that is electrically connected to the first electrode layer 210 is formed on the inner surfaces of the first heat transfer gas supply holes 230a and the first pin insertion holes 231a. The first electrode layer 210 and the first conductive film 232 ensure that the substrate W, the substrate mounting surface 111a, the first heat transfer gas supply holes 230a, and the first pin insertion holes 231a are at the same potential. This makes it possible to suppress the abnormal discharge described above, thereby enabling an improvement in high power.

[0079] Similarly, a second conductive film 236 electrically connected to the second electrode layer 212 is formed on the inner surfaces of the second heat transfer gas supply holes 233a and 233b and the inner surfaces of the second pin insertion holes 234a and 234b. The second electrode layer 212 and the second conductive film 236 ensure that the edge ring 112, the edge ring mounting surface 111b, the second heat transfer gas supply holes 233a and 233b, and the second pin insertion holes 234a and 234b are at the same potential. This makes it possible to suppress the abnormal discharge described above, thereby enabling an improvement in high power performance.

[0080] (Short circuit between the base and the first conductive film) In this embodiment, the base 1110 includes a conductive member, and as described above, the first conductive film 232 is formed on the inner surface of the first heat transfer gas supply hole 230a and the inner surface of the first pin insertion hole 231a. In this case, if the first conductive film 232 and the base 1110 are not short-circuited, there is a concern that abnormal discharge may occur on the back surface of the substrate W and in through holes such as the first heat transfer gas supply holes 230a, 230b and the first pin insertion holes 231a, 231b due to a potential difference between the first conductive film 232 and the base 1110.

[0081] In this regard, in this embodiment, the first conductive film 232 is short-circuited and electrically connected to the base 1110. This causes the first conductive film 232 and the base 1110 to have the same potential, making it possible to suppress the abnormal discharge described above.

[0082] In this case, during the process, the source RF power is directly supplied to the substrate W via the base 1110, the first conductive film 232, and the first electrode layer 210. That is, the first bias RF power, the first chucking power, and the source RF power are supplied to the first electrode layer 210 in a superimposed manner.

[0083] (Insulating material formation for the base) In another embodiment, for example, when base 1110 is formed of an insulating material such as alumina ceramics or silicon carbide, it is possible to suppress the abnormal discharge between the lower end (outlet) of through hole 220 and base 1110. Note that insulating film 221 in the above embodiment is omitted.

[0084] 7 and 8, when the base 1110 is made of an insulating material, the first conductive film 232 is formed on the inner surfaces of the first heat transfer gas supply holes 230a and 230b from the upper end of the first heat transfer gas supply hole 230a to the lower end of the first heat transfer gas supply hole 230b. Also, the first conductive film 232 is formed on the inner surfaces of the first pin insertion holes 231a and 231b from the upper end of the first pin insertion hole 231a to the lower end of the first pin insertion hole 231b.

[0085] As in the above embodiment, the second conductive film 236 is formed on the inner surfaces of the second heat transfer gas supply holes 233a and 233b from the upper end of the second heat transfer gas supply hole 233a to the lower end of the second heat transfer gas supply hole 233b. Also, the second conductive film 236 is formed on the inner surfaces of the second pin insertion holes 234a and 234b from the upper end of the second pin insertion hole 234a to the lower end of the second pin insertion hole 234b. The insulating film 235 in the above embodiment is omitted.

[0086] When the base 1110 is made of an insulating material, the base 1110 does not function as a lower electrode, and therefore the source RF power is supplied, for example, in the following manner. For example, as shown in FIG. 7 , the source RF power supply 31 may be electrically connected to the first electrode layer 210 and the second electrode layer 212. The source RF power is then supplied to the first electrode layer 210 and the second electrode layer 212. Note that in this example, the source RF power supply 31 may include a first source RF power supply connected to the first electrode layer 210 and a source RF power supply connected to the second electrode layer 212.

[0087] 8, a conductive bonding layer 240 may be provided between the base 1110 and the electrostatic chuck 1111. The source RF power supply 31 is electrically connected to the conductive bonding layer 240, and the source RF power is supplied to the conductive bonding layer 240.

[0088] (Substrate bias terminal eliminated) Conventionally, a terminal (hereinafter referred to as a "substrate bias terminal") for supplying bias power such as bias RF power to a substrate is provided on the substrate mounting surface of an electrostatic chuck. To provide this substrate bias terminal, a space must be formed in the electrostatic chuck, and an insulating film such as glass must be formed on the inner surface of the space via an adhesive. In such cases, the air layer in the space can impair heat dissipation during processing, potentially resulting in the formation of temperature singularities (hot spots) on the substrate. Temperature singularities are particularly likely to form in high-input processes using high power.

[0089] In this regard, according to the present embodiment, the first conductive film 232 and the base 1110 are short-circuited, and the first bias RF power, the first attraction power, and the source RF power are superimposed and supplied to the first electrode layer 210 during plasma processing. In this case, the conventional substrate bias terminal is unnecessary and can be omitted. Therefore, the local deterioration of heat dissipation during the above-mentioned process can be reduced, and the formation of temperature singularities on the substrate W can be suppressed.

[0090] (Edge ring bias terminal abolished) Conventionally, a terminal (hereinafter referred to as an "edge ring bias terminal") for supplying bias power, such as bias RF power, to the edge ring is provided on the edge ring mounting surface of an electrostatic chuck. To provide this edge ring bias terminal, a space must be formed in the electrostatic chuck. During processing, the electrostatic chuck heats and cools, expanding and contracting radially. Because the dielectric material (e.g., ceramic) of the electrostatic chuck and the conductive material (e.g., aluminum) of the base have a large difference in linear expansion coefficient, the linear expansion difference between the electrostatic chuck and the base increases during processing. Furthermore, because the edge ring bias terminal is provided on the radially outer side of the electrostatic chuck, the effect of this linear expansion difference increases. Therefore, to avoid interference between the edge ring bias terminal and the electrostatic chuck, it is necessary to provide a large space for the edge ring bias terminal, for example, by making the edge ring bias terminal flexible. In such a case, the air layer in the space impairs heat dissipation during processing, potentially resulting in the formation of temperature singularities (hot spots) on the substrate. Temperature singularities are particularly likely to form during high-power, high-input processes.

[0091] 9 and 10, when the base 1110 includes a conductive member, an insulating film 250 may be formed on the outer surface of the base 1110. The insulating film 250 is formed by, for example, thermal spraying. The insulating film 250 can reduce power leakage from the outer surface of the base 1110 to the outside of the electrostatic chuck 1111, and can also suppress abnormal discharge between the base 1110 and surrounding components.

[0092] As a countermeasure against the temperature singularities described above, a conductive film 251 is provided on the surface of the insulating film 250 as shown in FIG. 9 . The conductive film 251 is electrically connected to the second electrode layer 212. The conductive film 251 is also electrically connected to the second bias RF power supply 32b. In this case, the second bias RF power from the second bias RF power supply 32b is supplied to the second electrode layer 212 via the conductive film 251. In this case, the conventional edge ring bias terminal is unnecessary and can be omitted. Therefore, the local deterioration of heat dissipation during the above-mentioned process is reduced, and the formation of temperature singularities in the substrate W can be suppressed.

[0093] 10, an insulating film 252 may be formed on the surface of the conductive film 251. The insulating film 252 is formed by, for example, thermal spraying. In this case, abnormal discharge between the base 1110 and surrounding components can be suppressed. Furthermore, if the conductive film 251 is made of, for example, a metal, the insulating film 252 can also suppress metal contamination inside the plasma processing chamber 10 due to wear of the conductive film 251.

[0094] In another embodiment, when the base 1110 is made of an insulating material, a conductive film 253 is provided on the side surface of the base 1110 as shown in FIG. 11 as a countermeasure against the temperature singularities described above. Like the conductive film 251, the conductive film 253 is electrically connected to the second electrode layer 212 and to the second bias RF power supply 32b. In this case, the second bias RF power from the second bias RF power supply 32b is supplied to the second electrode layer 212 via the conductive film 253. In this case, the conventional edge ring bias terminal is unnecessary and can be omitted, thereby suppressing the formation of temperature singularities on the substrate W.

[0095] 12, an insulating film 254 may be formed on the surface of the conductive film 253, similarly to the insulating film 252. The insulating film 254 may be formed by, for example, thermal spraying. In this case, abnormal discharge between the base 1110 and surrounding components can be suppressed. Furthermore, if the conductive film 253 is made of, for example, a metal, the insulating film 254 can also suppress metal contamination inside the plasma processing chamber 10 due to wear of the conductive film 253.

[0096] <Measures to reduce uneven plasma distribution> When the base includes a conductive member and source RF power is supplied to the lower electrode of the base, the source RF power supplied to the lower electrode leaks into the plasma processing space through the electrostatic chuck. For example, in the case of a so-called hat-shaped electrostatic chuck, in which the edge ring mounting surface of the electrostatic chuck is lower than the substrate mounting surface and the dielectric portion on the edge ring side is thinner than on the substrate side, the impedance on the edge ring mounting surface side is lower than on the substrate side. As a result, more source RF power leaks out from the edge ring side, causing variations in the source RF power on the substrate side and the source RF power on the edge ring side. To address this problem, a thermal sprayed film for impedance adjustment has been formed directly below the edge ring mounting surface to suppress power leakage from the edge ring side.

[0097] In this regard, in this embodiment, when the source RF power supply 31 is connected to the second electrode layer 212 formed on the edge ring mounting surface 111b as described above, the source RF power is supplied directly to the second electrode layer 212. For this reason, it is not possible to adopt a conventional thermal spray structure for impedance adjustment. Therefore, it is preferable to provide an impedance adjustment unit inside the power supply line to the second electrode layer 212. An example of the impedance adjustment unit is a vacuum variable capacitor. In this case, it is possible to suppress the variation in the source RF power supplied to the first electrode layer 210 and the source RF power supplied to the second electrode layer 212. As a result, it is possible to reduce the unevenness of the plasma distribution.

[0098] <Measures to reduce uneven ion sheath thickness> Similar to the measures against the above-mentioned source RF power variation (uneven plasma distribution), measures against the bias RF power variation (uneven ion sheath thickness) are also necessary. For example, when a bias electrode is provided in an electrostatic chuck and bias RF power is supplied to the bias electrode, the bias RF power supplied to the bias electrode escapes into the plasma processing space through the electrostatic chuck. In this case, in the case of a hat-shaped electrostatic chuck, the impedance on the edge ring mounting surface side is smaller than that on the substrate side. As a result, more bias RF power escapes from the edge ring side, causing variations in the bias RF power on the substrate side and the bias RF power on the edge ring side.

[0099] In this regard, in this embodiment, since bias RF power is supplied directly to the second electrode layer 212, it is not possible to adopt a conventional thermal spray structure for impedance adjustment. Therefore, it is preferable to provide an impedance adjustment unit inside the power supply line to the second electrode layer 212. An example of the impedance adjustment unit is a vacuum variable capacitor. In this case, it is possible to suppress variations in the bias RF power supplied to the first electrode layer 210 and the bias RF power supplied to the second electrode layer 212. As a result, it is possible to reduce variations in the ion sheath thickness.

[0100] <Specific Arrangement of First and Second Electrode Layers> Next, a specific arrangement of the first electrode layer 210 and the second electrode layer 212 will be described. Fig. 13 is a plan view showing the arrangement of the first electrode layer 210 and the second electrode layer 212. Fig. 14 is an enlarged plan view showing a part (dotted line part C) in Fig. 13. Fig. 15 is a cross-sectional view taken along line AA in Fig. 14.

[0101] The substrate mounting surface 111a of the substrate mounting portion 1111a is provided with a seal band 200 and a plurality of dots 201. The edge ring mounting surface 111b of the edge ring mounting portion 1111b is provided with a seal band 203.

[0102] The first electrode layer 210 has a triple structure in which annular first electrode layers 210a, 210b, and 210c are provided from the radially outer side. The first electrode layer 210 also has a plurality of first electrode layers 210d that are electrically connected to the first electrode layers 210a, 210b, and 210c and extend in the radial direction. In the example shown in Fig. 13, the first electrode layers 210d are provided in four locations, but the number of first electrode layers 210d is not limited.

[0103] 5, the first electrode layer 210a is provided in a ring shape at the center of the upper surface of the seal band 200. The reason why it is preferable to provide the first electrode layer 210a at the center of the upper surface of the seal band 200 in this manner is as described above. The first electrode layer 210a contacts the back surface of the substrate W. That is, in the first electrode layer 210, power is supplied to the substrate W via this first electrode layer 210a. Note that, to ensure reliable contact between the first electrode layer 210a and the substrate W, the first electrode layer 210a may protrude from the upper surface of the surrounding seal band 200.

[0104] A plurality of first heat transfer gas supply holes 230a are provided at equal intervals on the same circumference in the first heat transfer space 202 on the radially inner side of the seal band 200. The first electrode layer 210b is provided in an annular shape on the same circumference as the plurality of first heat transfer gas supply holes 230a. The first electrode layer 210b is electrically connected to a first conductive film 232 provided on the inner surface of each first heat transfer gas supply hole 230a.

[0105] A plurality of first pin insertion holes 231a are provided radially inward of the plurality of first heat transfer gas supply holes 230a at equal intervals on the same circumference. The first electrode layer 210c is provided annularly on the same circumference as the plurality of first pin insertion holes 231a. The first electrode layer 210c is electrically connected to a first conductive film 232 provided on the inner surface of each first pin insertion hole 231a.

[0106] Here, if the first electrode layer 210 were provided on the upper surface of the dots 201, as described above, the chucking force of the substrate W would decrease on the first electrode layer 210. Therefore, in this embodiment, the first electrode layers 210b, 210c, and 210d are not provided on the upper surface of the dots 201. Note that, although the first electrode layers 210b and 210c are provided around the dots 201 in the examples shown in Figures 14 and 15, they may also be provided between the dots 201.

[0107] The second electrode layer 212 includes a ring-shaped second electrode layer 212 a and a second electrode layer 212 b for electrically connecting the second electrode layer 212 a and the second conductive film 236 .

[0108] The second electrode layer 212a is provided in an annular shape at the center of the upper surface of the seal band 203. The reason why it is preferable to provide the second electrode layer 212a at the center of the upper surface of the seal band 203 in this manner is as described above. The second electrode layer 212a contacts the back surface of the edge ring 112. That is, in the second electrode layer 212, power is supplied to the edge ring 112 via this second electrode layer 212a. Note that, to ensure contact between the second electrode layer 212a and the edge ring 112, the second electrode layer 212a may protrude from the upper surface of the surrounding seal band 203.

[0109] A plurality of second heat transfer gas supply holes 233a and a plurality of second pin insertion holes 234a are provided at equal intervals on the same circumference in the second heat transfer space 204 on the radial outer side of the seal band 203. The second electrode layer 212b extends radially from the second electrode layer 212 and is electrically connected to second conductive films 236 provided on the inner surfaces of the second heat transfer gas supply holes 233a and the inner surfaces of the second pin insertion holes 234a.

[0110] The above embodiment is an example of the arrangement of the first electrode layer 210 and the second electrode layer 212, and the arrangement of these first electrode layer 210 and second electrode layer 212 can be set arbitrarily. For example, as shown in FIG. 16, the first electrode layer 210a on the seal band 200 may be divided. Also, for example, as shown in FIG. 17, the first electrode layer 210a on the seal band 200 may be provided at a single point. However, in consideration of the uniformity of plasma processing within the substrate surface, it is preferable that the first electrode layer 210 and the second electrode layer 212 be arranged symmetrically.

[0111] <Adsorption sequence> Next, an example of a suction sequence in this embodiment will be described. Fig. 18 is an explanatory diagram showing an example of a suction sequence for the edge ring 112.

[0112] (Step S1: Temporary adsorption) First, in step S1, the edge ring 112 is temporarily attracted. As shown in FIG. 18A, in the temporary attraction, a fourth attraction power is supplied from the fourth attraction power source 33d to the second attraction electrode layer 213, and a fourth attraction voltage A4, for example, +3 kV, is applied. Then, due to dielectric polarization of the edge ring mounting portion 1111b of the electrostatic chuck 1111, the edge ring mounting surface 111b side of the edge ring mounting portion 1111b is positively charged.

[0113] The second electrode layer 212 is connected to a ground potential. As a result, electrons are supplied from the plasma to the edge ring 112 due to the positive charge on the edge ring mounting surface 111b of the edge ring mounting portion 1111b, and the edge ring 112 becomes negatively charged. Then, a Coulomb force acts due to the potential difference between the edge ring mounting surface 111b (positive charge) and the back surface of the edge ring 112 (negative charge), and the edge ring 112 is temporarily attracted to the edge ring mounting surface 111b.

[0114] The method for temporarily attracting the edge ring 112 is not limited to this embodiment. For example, a fourth attracting power may be supplied to the second attracting electrode layer 213, and a fourth attracting voltage A4 may be applied thereto, while the second electrode layer 212 may be connected to a floating potential. When the inside of the plasma processing chamber 10 is maintained at a constant pressure with gas, electrons are supplied to the edge ring 112 from the plasma processing chamber 10, which is connected to a ground potential, via the gas. This generates a Coulomb force due to the potential difference between the edge ring mounting surface 111b (positive charge) and the back surface of the edge ring 112 (negative charge), and the edge ring 112 is temporarily attracted to the edge ring mounting surface 111b.

[0115] In order to prevent the edge ring 112 from moving when the inside of the plasma processing chamber 10 is evacuated from the atmospheric atmosphere to a vacuum atmosphere, it is necessary to adsorb the edge ring 112 even under atmospheric conditions. For this reason, temporary adsorption is performed before the actual adsorption.

[0116] (Step S2: Main absorption) Next, in step S2, the edge ring 112 is fully attracted to the substrate 112. As described above, the force of attraction of the edge ring 112 is reduced on the second electrode layer 212, and therefore the edge ring 112 is fully attracted to the substrate 112.

[0117] 18(b), in the main attraction, the fourth attraction power supply 33d continues to supply the fourth attraction power to the second attraction electrode layer 213, and a fourth attraction voltage A4, for example, +3 kV, is applied. Furthermore, the third attraction power supply 33c supplies the third attraction power to the second electrode layer 212, and a third attraction voltage A3, for example, −3 kV, is applied. This allows a voltage of 6 kV (=|A3|+|A4|) to be generated across the edge ring 112 and the second attraction electrode layer 213. Therefore, by using two simple power supplies, the third attraction power supply 33c and the fourth attraction power supply 33d, the attraction force of the edge ring 112 can be increased.

[0118] (Step S3: Plasma treatment) Next, in step S3, plasma processing is performed. During the plasma processing, main attraction is continued as shown in FIG. 18(c). That is, the fourth attraction power supply 33d continues to supply the fourth attraction power to the second attraction electrode layer 213, and a fourth attraction voltage A4, for example, +3 kV, is applied. Furthermore, the third attraction power supply 33c continues to supply the third attraction power to the second electrode layer 212, and a third attraction voltage A3, for example, -3 kV, is applied.

[0119] Furthermore, during plasma processing, second bias RF power is supplied from the second bias RF power supply 32b to the second electrode layer 212, and a second bias RF voltage B2 is applied to the second electrode layer 212. That is, the second bias RF power and the third attraction power are supplied to the second electrode layer 212 in a superimposed manner.

[0120] Furthermore, the source RF power for generating plasma may be supplied from the source RF power supply 31 to the lower electrode of the base 1110, or may be supplied from the source RF power supply 31 to the second electrode layer 212. In the latter case, the second bias RF power, the third attraction power, and the source RF power are supplied to the second electrode layer 212 in a superimposed manner.

[0121] The chucking sequence for the substrate W is the same as the chucking sequence for the edge ring 112 described above. That is, in the temporary chucking in step S1, the second chucking power is supplied from the second chucking power source 33b to the first chucking electrode layer 211, and a second chucking voltage A2 is applied. The first electrode layer 210 is connected to the ground potential. Then, a Coulomb force acts due to the potential difference between the substrate mounting surface 111a (positive charge) and the back surface of the substrate W (negative charge), and the substrate is temporarily chuck-attached to the substrate mounting surface 111a.

[0122] Next, in the main attraction in step S2, the second attraction power supply 33b continues to supply the second attraction power to the first attraction electrode layer 211, and a second attraction voltage A2 is applied. In addition, the first attraction power supply 33a supplies the first attraction power to the first electrode layer 210, and a first attraction voltage A1 is applied. This makes it possible to generate a voltage that is the sum of |A1| and |A2| between the substrate W and the first attraction electrode layer 211. This makes it possible to increase the attraction force for the substrate W.

[0123] Next, in the plasma processing of step S3, the main attraction of the substrate W is continued. That is, the second attraction power continues to be supplied from the second attraction power source 33b to the first attraction electrode layer 211, and the second attraction voltage A2 is applied. Also, the first attraction power continues to be supplied from the first attraction power source 33a to the first electrode layer 210, and the first attraction voltage A1 is applied.

[0124] Furthermore, during plasma processing, a first bias RF power is supplied from the first bias RF power supply 32a to the first electrode layer 210, and a first bias RF voltage B1 is applied to the first electrode layer 210. That is, the first bias RF power and the first attraction power are supplied to the first electrode layer 210 in a superimposed manner.

[0125] Furthermore, the source RF power for generating plasma may be supplied from the source RF power supply 31 to the base 1110, or may be supplied from the source RF power supply 31 to the first electrode layer 210. In the latter case, the first bias RF power, the first attraction power, and the source RF power are supplied to the first electrode layer 210 in a superimposed manner.

[0126] The adsorption sequence is not limited to this embodiment. Various examples of adsorption sequences will be described below. In the following first to third examples, the time axis will be aligned for comparison.

[0127] <First example of adsorption sequence> As shown in FIG. 19, in the first example, first, gas is supplied into plasma processing chamber 10 (time T1).

[0128] Next, a second attraction power is supplied from the second attraction power source 33b to the first attraction electrode layer 211 (time T2). At time T2, electrons are supplied to the edge ring via gas from the plasma processing chamber 10, which is connected to ground potential. Then, a Coulomb force acts due to the potential difference between the substrate mounting surface 111a (positive charge) and the back surface of the substrate W (negative charge), and the substrate W is temporarily attracted to the substrate mounting surface 111a. In this temporary attraction, the number of electrons supplied to the substrate W is small, and the attraction force is weak.

[0129] Next, source RF power is supplied from the source RF power supply 31 to the lower electrode of the base 1110 (time T3). At time T3, plasma is generated, and electrons are supplied from the plasma to the substrate W. Then, a Coulomb force acts due to the potential difference between the substrate mounting surface 111a (positive charge) and the back surface of the substrate W (negative charge), and the substrate W is finally attracted to the substrate mounting surface 111a. In this actual attraction, a sufficient amount of electrons is supplied to the substrate W, and the attraction force is large.

[0130] <Second example of adsorption sequence> 20, in the second example, first, the second attraction power supply 33b supplies the first attraction electrode layer 211 with the second attraction power (time T2). At time T2, the first electrode layer 210 is connected to the ground potential. Then, electrons are supplied from the ground potential to the substrate W, and the substrate W is negatively charged. Then, a Coulomb force acts due to the potential difference between the substrate mounting surface 111a (positive charge) and the back surface of the substrate W (negative charge), and the substrate W is finally attracted to the substrate mounting surface 111a. Note that this actual attraction of the substrate W at time T2 is similar to the temporary attraction in step S1 in the above embodiment shown in FIG. 18.

[0131] In this case, unlike the first example, the substrate W can be fully adsorbed without depending on the gas or source RF power.

[0132] In the second example, the suction sequence of the edge ring 112 is the same as the suction sequence of the substrate W.

[0133] <Third example of adsorption sequence> 21, first, the second attraction power supply 33b supplies the second attraction power to the first attraction electrode layer 211 (time T2). At time T2, the first electrode layer 210 is connected to the ground potential. Then, similar to the second example, the substrate W is fully attracted to the substrate mounting surface 111a.

[0134] Next, a first attraction power is supplied from the first attraction power source 33a to the first electrode layer 210 (time T3). The first attraction voltage applied by this first attraction power and the second attraction voltage applied by the second attraction power are opposite in polarity. This increases the potential difference between the substrate mounting surface 111a (positive charge) and the back surface of the substrate W (negative charge), thereby increasing the attraction force of the substrate W. Note that the attraction of the substrate W at time T3 is similar to the main attraction in step S2 in the above embodiment shown in FIG. 18.

[0135] In the third example, the suction sequence of the edge ring 112 is the same as the suction sequence of the substrate W.

[0136] The embodiments disclosed herein should be considered to be illustrative in all respects and not restrictive. The above-described embodiments may be omitted, substituted, or modified in various ways without departing from the scope and spirit of the appended claims. For example, the components of the above-described embodiments may be arbitrarily combined. Such an arbitrary combination naturally provides the functions and effects of each of the components involved in the combination, and also provides other functions and effects that are apparent to those skilled in the art from the description of this specification.

[0137] Furthermore, the effects described herein are merely descriptive or exemplary and are not limiting. In other words, the technology according to the present disclosure may achieve other effects that are apparent to those skilled in the art from the description of this specification, in addition to or in place of the above-described effects.

[0138] Note that the following configuration examples also fall within the technical scope of the present disclosure. (1) a plasma processing chamber; a base disposed within the plasma processing chamber; an electrostatic chuck disposed on an upper surface of the base and including a substrate mounting portion and an edge ring mounting portion on which an edge ring surrounding the substrate mounted on the substrate mounting portion is mounted; at least one of a first power supply unit that supplies power to the substrate placement unit and a second power supply unit that supplies power to the edge ring placement unit; Equipped with The first power supply unit includes: a first electrode layer formed on the substrate placement surface of the substrate placement part; a first attraction electrode layer disposed below the first electrode layer within the substrate mounting portion; a first bias power supply electrically connected to the first electrode layer; Equipped with The second power supply unit includes: a second electrode layer formed on the edge ring mounting surface of the edge ring mounting portion; a second attraction electrode layer disposed below the second electrode layer within the edge ring mounting portion; a second bias power supply electrically connected to the second electrode layer; A plasma processing apparatus comprising: (2) The plasma processing apparatus according to (1), wherein the first electrode layer has a region that does not overlap with the first attraction electrode layer in a plan view. (3) The plasma processing apparatus according to (1) or (2), wherein the second electrode layer has a region that does not overlap with the second attraction electrode layer in a plan view. (4) The plasma processing apparatus according to any one of (1) to (3), wherein the first electrode layer is formed on the outer periphery of the substrate mounting surface. (5) The plasma processing apparatus according to (4), wherein the first electrode layer is formed at the center of an upper surface of a seal band of the substrate mounting surface when viewed from the side. (6) The plasma processing apparatus according to any one of (1) to (5), wherein the first power supply unit includes a first attraction power source electrically connected to the first electrode layer. (7) The plasma processing apparatus according to (6), wherein the first power supply unit includes a second attraction power source electrically connected to the first attraction electrode layer. (8) The plasma processing apparatus according to any one of (1) to (7), wherein the first power supply unit includes a first plasma generation power supply electrically connected to the first electrode layer. (9) The plasma processing apparatus according to any one of (1) to (8), wherein the second power supply unit includes a third attraction power source electrically connected to the second electrode layer. (10) The plasma processing apparatus according to (9), wherein the second power supply unit includes a fourth attraction power source electrically connected to the second attraction electrode layer. (11) The plasma processing apparatus according to any one of (1) to (10), wherein the second power supply unit includes a second plasma generation power supply electrically connected to the second electrode layer. (12) the substrate placement portion includes at least one first through-hole; The plasma processing apparatus according to any one of (1) to (11), wherein a first conductive film that is electrically connected to the first electrode layer is formed on an inner surface of the first through hole. (13) the base is formed of a conductive material; The plasma processing apparatus according to (12), wherein the base and the first conductive film are electrically connected to each other. (14) the edge ring mounting portion includes at least one second through-hole; The plasma processing apparatus according to any one of (1) to (13), wherein a second conductive film that is electrically connected to the second electrode layer is formed on an inner surface of the second through hole. (15) a dielectric portion including a substrate placement portion and an edge ring placement portion for placing an edge ring surrounding the substrate placed on the substrate placement portion; at least one of a first electrode unit provided on the substrate placement unit and a second electrode unit provided on the edge ring placement unit; Equipped with The first electrode portion a first bias electrode layer formed on the substrate placement surface of the substrate placement part; a first attraction electrode layer disposed below the first bias electrode layer within the substrate mounting portion; Equipped with The second electrode portion is a second bias electrode layer formed on the edge ring mounting surface of the edge ring mounting portion; a second attraction electrode layer disposed below the second bias electrode layer within the edge ring mounting portion; An electrostatic chuck comprising: (16) The electrostatic chuck according to (15), wherein the first bias electrode layer has a region that does not overlap with the first attraction electrode layer in a plan view. (17) The electrostatic chuck according to (15) or (16), wherein the second bias electrode layer has a region that does not overlap with the second attraction electrode layer in a plan view. (18) The electrostatic chuck according to any one of (15) to (17), wherein the first bias electrode layer is formed on the outer periphery of the substrate mounting surface. (19) The electrostatic chuck according to (18), wherein the first bias electrode layer is formed at the center of an upper surface of a seal band of the substrate mounting surface in a side view. (20) the substrate placement portion includes at least one first through-hole; The electrostatic chuck according to any one of (15) to (19), wherein a first conductive film that is electrically connected to the first bias electrode layer is formed on an inner surface of the first through hole. (twenty one) the edge ring mounting portion includes at least one second through-hole; The electrostatic chuck according to any one of (15) to (20), wherein a second conductive film that is electrically connected to the second bias electrode layer is formed on an inner surface of the second through hole. (twenty two) A plasma processing method using a plasma processing apparatus, comprising: The plasma processing apparatus includes: a plasma processing chamber; a base disposed within the plasma processing chamber; an electrostatic chuck disposed on an upper surface of the base and including a substrate mounting portion and an edge ring mounting portion on which an edge ring surrounding the substrate mounted on the substrate mounting portion is mounted; an electrode layer formed on the substrate placement surface of the substrate placement part; an attraction electrode layer disposed below the electrode layer within the substrate mounting portion; a bias power supply electrically connected to the electrode layer; a first power source for attraction electrically connected to the electrode layer; a second power source for attraction electrically connected to the attraction electrode layer; Equipped with The plasma processing method includes: supplying second attraction power from the second attraction power source to the attraction electrode layer to temporarily attract the substrate to the substrate mounting portion; supplying a first attraction power from the first attraction power source to the electrode layer and supplying the second attraction power from the second attraction power source to the attraction electrode layer, thereby finally attracting the substrate to the substrate mounting portion; supplying bias power from the bias power supply to the electrode layer to perform plasma processing on the substrate; A plasma processing method comprising: [Explanation of symbols]

[0139] 1. Plasma processing equipment 10 Plasma Processing Chamber 112 Edge Ring 1110 Foundation 1111 Electrostatic chuck 1111a Substrate placement section 1111b Edge ring mounting part 210 First electrode layer 211 First adsorption electrode layer 212 second electrode layer 213 Second adsorption electrode layer 32a First Bias RF Power Supply 32b Second Bias RF Power Supply W substrate

Claims

1. a plasma processing chamber; a base disposed within the plasma processing chamber; an electrostatic chuck disposed on an upper surface of the base and including a substrate mounting portion and an edge ring mounting portion on which an edge ring surrounding the substrate mounted on the substrate mounting portion is mounted; at least one of a first power supply unit that supplies power to the substrate placement unit and a second power supply unit that supplies power to the edge ring placement unit; Equipped with The first power supply unit includes: a first electrode layer formed on the substrate placement surface of the substrate placement part; a first attraction electrode layer disposed below the first electrode layer within the substrate mounting portion; a first bias power supply electrically connected to the first electrode layer; Equipped with The second power supply unit includes: a second electrode layer formed on the edge ring mounting surface of the edge ring mounting portion; a second attraction electrode layer disposed below the second electrode layer within the edge ring mounting portion; a second bias power supply electrically connected to the second electrode layer; A plasma processing apparatus comprising:

2. The plasma processing apparatus according to claim 1 , wherein the first electrode layer has a region that does not overlap with the first attraction electrode layer in a plan view.

3. The plasma processing apparatus according to claim 1 , wherein the second electrode layer has a region that does not overlap with the second attraction electrode layer in a plan view.

4. The plasma processing apparatus according to claim 1 , wherein the first electrode layer is formed on an outer periphery of the substrate mounting surface.

5. The plasma processing apparatus according to claim 4 , wherein the first electrode layer is formed at the center of an upper surface of a seal band of the substrate mounting surface when viewed from the side.

6. The plasma processing apparatus according to claim 1 , wherein the first power supply unit includes a first attraction power source electrically connected to the first electrode layer.

7. 7. The plasma processing apparatus according to claim 6, wherein the first power supply unit includes a second attraction power source electrically connected to the first attraction electrode layer.

8. The plasma processing apparatus according to claim 1 , wherein the first power supply unit includes a first plasma generation power supply electrically connected to the first electrode layer.

9. The plasma processing apparatus according to claim 1 , wherein the second power supply unit includes a third attraction power source electrically connected to the second electrode layer.

10. The plasma processing apparatus according to claim 9 , wherein the second power supply unit includes a fourth attraction power source electrically connected to the second attraction electrode layer.

11. The plasma processing apparatus according to claim 1 , wherein the second power supply unit includes a second plasma generation power supply electrically connected to the second electrode layer.

12. the substrate placement portion includes at least one first through-hole; The plasma processing apparatus according to claim 1 , wherein a first conductive film electrically connected to said first electrode layer is formed on an inner surface of said first through hole.

13. the base is formed of a conductive material; The plasma processing apparatus according to claim 12 , wherein the base and the first conductive film are electrically connected to each other.

14. the edge ring mounting portion includes at least one second through-hole; The plasma processing apparatus according to claim 1 , wherein a second conductive film electrically connected to the second electrode layer is formed on an inner surface of the second through hole.

15. a dielectric portion including a substrate placement portion and an edge ring placement portion for placing an edge ring surrounding the substrate placed on the substrate placement portion; at least one of a first electrode portion provided on the substrate placement portion and a second electrode portion provided on the edge ring placement portion; Equipped with The first electrode portion a first bias electrode layer formed on the substrate placement surface of the substrate placement part; a first attraction electrode layer disposed below the first bias electrode layer within the substrate mounting portion; Equipped with The second electrode portion a second bias electrode layer formed on the edge ring mounting surface of the edge ring mounting portion; a second attraction electrode layer disposed below the second bias electrode layer within the edge ring mounting portion; An electrostatic chuck comprising:

16. 16. The electrostatic chuck according to claim 15, wherein the first bias electrode layer has a region that does not overlap with the first attraction electrode layer in a plan view.

17. 16. The electrostatic chuck according to claim 15, wherein the second bias electrode layer has a region that does not overlap with the second attraction electrode layer in a plan view.

18. 16. The electrostatic chuck according to claim 15, wherein the first bias electrode layer is formed on an outer periphery of the substrate mounting surface.

19. 19. The electrostatic chuck according to claim 18, wherein the first bias electrode layer is formed at the center of an upper surface of a seal band of the substrate mounting surface in a side view.

20. the substrate placement portion includes at least one first through-hole; The electrostatic chuck according to claim 15 , wherein a first conductive film is formed on an inner surface of the first through hole, the first conductive film being electrically connected to the first bias electrode layer.

21. the edge ring mounting portion includes at least one second through-hole; The electrostatic chuck according to claim 15 , wherein a second conductive film is formed on an inner surface of the second through hole, the second conductive film being electrically connected to the second bias electrode layer.

22. A plasma processing method using a plasma processing apparatus, comprising: The plasma processing apparatus includes: a plasma processing chamber; a base disposed within the plasma processing chamber; an electrostatic chuck disposed on an upper surface of the base and including a substrate mounting portion and an edge ring mounting portion on which an edge ring surrounding the substrate mounted on the substrate mounting portion is mounted; an electrode layer formed on the substrate placement surface of the substrate placement part; an attraction electrode layer disposed below the electrode layer within the substrate mounting portion; a bias power supply electrically connected to the electrode layer; a first power source for attraction electrically connected to the electrode layer; a second power source for attraction electrically connected to the attraction electrode layer; Equipped with The plasma processing method includes: supplying second attraction power from the second attraction power source to the attraction electrode layer to temporarily attract the substrate to the substrate mounting portion; supplying a first attraction power from the first attraction power source to the electrode layer and supplying the second attraction power from the second attraction power source to the attraction electrode layer, thereby fully attracting the substrate to the substrate mounting portion; supplying bias power from the bias power supply to the electrode layer to perform plasma processing on the substrate; A plasma processing method comprising:

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