Holding device, substrate processing apparatus and article manufacturing method

Abstract

To provide a technique which is advantageous for cancelling holding of a substrate by a chuck.SOLUTION: A holding device for holding a substrate comprises: a chuck for holding the substrate; a supply mechanism for supplying gas to a first space between the substrate and the chuck via a first hole which is provided at a first position in the chuck; an open mechanism for communicating the first space and an external space of the chuck via a second hole provided at a second position, which is different from the first position, in the chuck; and a control section for controlling the supply mechanism and the open mechanism so as to supply the gas to the first space and communicate the first space and the external space when cancelling the holding of the substrate by the chuck.SELECTED DRAWING: Figure 2

Description

[Technical Field]

[0001] The present invention relates to a holding device, a substrate processing apparatus, and a method for manufacturing an article. [Background technology]

[0002] Substrate chucks are used to hold (vacuum hold) substrates in manufacturing processes for semiconductor devices, liquid crystal display devices, and the like (see Patent Document 1). Patent Document 1 discloses a technique for reducing wear on the substrate chuck by supplying gas into the space between the substrate and the substrate chuck when unloading the substrate from a state in which a vacuum is applied to the substrate and the substrate is clamped to the substrate chuck. Patent Document 1 also discloses a technique for releasing the vacuum applied to the substrate from an outer region of the substrate when the substrate is clamped to the substrate chuck. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Publication No. 2022-177165 Summary of the Invention [Problem to be solved by the invention]

[0004] However, in the conventional technology, if an excessive amount of gas is supplied to the space between the substrate and the substrate chuck during an unload sequence in which the substrate is released from the substrate chuck, the substrate floats up from the substrate chuck and slides sideways. On the other hand, if an insufficient amount of gas is supplied, adhesion remains between the substrate and the substrate chuck, and the substrate chuck is worn out when the substrate is forcibly removed from the substrate chuck. Furthermore, when the vacuum applied to the substrate is released, time is required for the gas to fill the space to which the vacuum was applied, which lengthens the unload time and reduces productivity.

[0005] The present invention has been made in view of the above problems of the conventional technology, and has as its exemplary object to provide a technique that is advantageous for releasing a substrate from a chuck. [Means for solving the problem]

[0006] One aspect of the present invention relates to a holding device for holding a substrate, the holding device including: a chuck for holding the substrate; a supply mechanism for supplying gas to a first space between the substrate and the chuck through a first hole provided at a first position of the chuck; an opening mechanism for communicating the first space with an external space of the chuck through a second hole provided at a second position of the chuck different from the first position; and a control unit for controlling the supply mechanism and the opening mechanism so as to include a period during which the holding of the substrate by the chuck is released, during which the supply of the gas to the first space by the supply mechanism and the communication of the first space with the external space by the opening mechanism are simultaneously performed; during a first period included in the period during which the holding of the substrate by the chuck is released, the gas from the external space flows into the first space through the second hole; and during a second period following the first period included in the period during which the holding of the substrate by the chuck is released, the gas from the first space flows into the external space through the second hole.

[0007] Further objects and other aspects of the present invention will become apparent from the following description of the embodiments with reference to the accompanying drawings. [Effects of the Invention]

[0008] According to the present invention, for example, it is possible to provide a technique that is advantageous for releasing a substrate held by a chuck. [Brief explanation of the drawings]

[0009] [Figure 1] 1 is a schematic diagram showing the configuration of an exposure apparatus according to one aspect of the present invention. [Figure 2] FIG. 2 is a schematic diagram showing the configuration of a substrate stage in the first embodiment. [Figure 3] FIG. 2 is a view showing the substrate stage from a viewpoint in the +Z direction. [Figure 4] FIG. 2 is a cross-sectional view of a substrate stage. [Figure 5] FIG. 2 is a cross-sectional view of a substrate stage. [Figure 6] FIG. 10 is a schematic view showing the configuration of a substrate stage in a second embodiment. [Figure 7] FIG. 10 is a schematic view showing the configuration of a substrate stage in a third embodiment. [Figure 8] 10A and 10B are diagrams showing an example of timing for turning on the solenoid valve in the operation of transferring the substrate from the substrate chuck to the pin-shaped members. [Figure 9] 10A and 10B are diagrams showing an example of timing for turning on the solenoid valve in the operation of transferring the substrate from the substrate chuck to the pin-shaped members. [Figure 10] 10A and 10B are diagrams showing specific examples of the arrangement of open holes and supply holes. DETAILED DESCRIPTION OF THE INVENTION

[0010] Hereinafter, embodiments will be described in detail with reference to the accompanying drawings. Note that the following embodiments do not limit the invention according to the claims. Although multiple features are described in the embodiments, not all of these multiple features are necessarily essential to the invention, and multiple features may be combined arbitrarily. Furthermore, in the accompanying drawings, the same reference numerals are used to designate the same or similar components, and redundant explanations will be omitted.

[0011] In this embodiment, the substrate processing apparatus for processing substrates includes a lithography apparatus, a measurement apparatus, an inspection apparatus, etc. The lithography apparatus is an apparatus for forming a pattern on a substrate, and includes, for example, an exposure apparatus, an imprint apparatus, a planarization apparatus, a drawing apparatus, etc. The exposure apparatus includes an apparatus for projecting a pattern of an original (mask or reticle) onto a substrate to expose the substrate. The imprint apparatus includes an apparatus for molding an imprint material on a substrate using a mold to form a pattern of the imprint material on the substrate. The planarization apparatus includes an apparatus for planarizing a composition on a substrate using a mold having a flat surface. The drawing apparatus includes an apparatus for drawing a pattern on a substrate using a charged particle beam (such as an electron beam or an ion beam). The measurement apparatus is an apparatus for measuring the substrate, and includes, for example, an alignment measurement apparatus used for aligning the original and the substrate. The inspection apparatus is an apparatus for inspecting the substrate, and includes, for example, an overlay inspection apparatus for inspecting the overlay accuracy of a pattern formed on a substrate.

[0012] First Embodiment 1 is a schematic diagram showing the configuration of an exposure apparatus 200 as a substrate processing apparatus according to one aspect of the present invention. The exposure apparatus 200 is used in a lithography process, which is a manufacturing process for devices such as semiconductor devices and liquid crystal display devices. The exposure apparatus 200 is a lithography apparatus that exposes a substrate using an original to transfer a pattern of the original onto the substrate, i.e., forms a pattern on the substrate.

[0013] In this specification and the accompanying drawings, directions are indicated in an XYZ coordinate system, with the direction parallel to the surface on which the substrate is placed being the XY plane. The directions parallel to the X-axis, Y-axis, and Z-axis in the XYZ coordinate system are the X-direction, Y-direction, and Z-direction, respectively, and rotation around the X-axis, Y-axis, and Z-axis are respectively designated as θX, θY, and θZ.

[0014] As shown in FIG. 1, the exposure apparatus 200 includes a substrate stage 1, a control unit 100, an illumination optical system 202, an original stage 204, a projection optical system 205, an off-axis scope 209, a substrate transport system 210, and an original transport system 214.

[0015] In the exposure apparatus 200, an illumination optical system 202 illuminates an original 203 with light (exposure light) from a light source unit. A projection optical system 205 has a function of forming an image of light from an object plane onto an image plane, and projects light that has passed through (the pattern of) the original 203 onto a substrate 2, forming an image of the pattern of the original 203 on the substrate.

[0016] The original stage 204 holds the original 203 via an original chuck (not shown) that sucks (holds) the original 203. The original stage 204 is a stage that moves linearly in the X, Y, and Z directions and rotates in the θX, θY, and θZ directions, and the driving in each direction can be controlled independently. The exposure apparatus 200 is provided with a laser interferometer (not shown) to measure the position of the original stage 204 with high precision. The position of the original stage 204 is determined from the displacement of the original stage 204 measured by the laser interferometer.

[0017] The original transport system 214 includes a hand 215, a pre-alignment stage 216, a transport robot 217, and a storage unit 218. The transport robot 217 is an articulated robot. The transport robot 217 includes an original holder that holds the original 203 and can drive the original holder to any position in the XYZ space. The storage unit 218 includes a platform on which the original 203 is placed and stores the original 203 transported from outside the apparatus. The original 203 stored in the storage unit 218 is transported to the pre-alignment stage 216 by the transport robot 217.

[0018] On the pre-alignment stage 216, the marks on the original 203 are detected (observed) with a microscope to measure the positional relationship between the original 203 and the pre-alignment stage 216 (the positional deviation of the original 203 with respect to the pre-alignment stage 216). Once the positional relationship between the original 203 and the pre-alignment stage 216 has been measured, the hand 215 holds the original 203 on the pre-alignment stage and drives it along a guide to a position (original supply position) for delivering the original 203 to the original stage 204. At the original supply position, the hand 215 delivers the original 203 to the original stage 204. The original stage 204 holds the original 203 by vacuum suction via an original chuck. The positional deviation of the original 203 with respect to the pre-alignment stage 216 in the X direction, Y direction, and θZ direction can be corrected by adjusting the position where the original stage 204 receives the original 203.

[0019] The substrate transport system 210 includes a supply hand 211, a collection hand 212, a storage unit 213, a pre-alignment unit 219, a transport robot 220, and a temporary placement table 221. The storage unit 213 stores the substrate 2. The transport robot 220 is configured as an articulated robot. The transport robot 220 includes a substrate holder that holds the substrate 2, and is capable of driving the substrate holder to any position in the XYZ space. The transport robot 220 picks up the substrate 2 from the storage unit 213 and places the substrate 2 on the pre-alignment unit 219. In the pre-alignment unit 219, the outer periphery of the substrate 2 is irradiated with light, and the reflected light is detected by a sensor, thereby measuring the outer position of the substrate 2 relative to the pre-alignment unit 219.

[0020] The supply hand 211 is a mechanism for transferring the substrate 2 from the pre-alignment unit 219 to the substrate stage 1 (the pin-shaped members 6 provided on the coarse movement stage 5). The supply hand 211 is capable of holding the substrate 2 by vacuum suction. The recovery hand 212 is a mechanism for transferring the substrate 2 from the substrate stage 1 to the temporary placement table 221. The recovery hand 212 is capable of holding the substrate 2 by vacuum suction. The temporary placement table 221 is a table on which the substrate 2 recovered from the substrate stage 1 by the recovery hand 212 is temporarily placed. The transfer robot 220 cannot directly receive the substrate 2 from the recovery hand 212, so the transfer robot 2 transfers the substrate 2 via the temporary placement table 221.

[0021] The substrate stage 1 includes a fine movement stage 4 and a coarse movement stage 5. The substrate stage 1 holds the substrate 2 by vacuum suction via a substrate chuck 3 placed on the fine movement stage 4. The fine movement stage 4 is a stage that moves linearly in the X, Y, and Z directions and rotates in the θX, θY, and θZ directions, and the drive in each direction can be controlled independently. The exposure apparatus 200 is provided with a laser interferometer (not shown) to measure the position of the fine movement stage 4 with high precision. The position of the fine movement stage 4 is determined from the amount of displacement of the fine movement stage 4 measured by the laser interferometer.

[0022] The pin-shaped members 6 are used when receiving the substrate 2 from the supply hand 211 and when transferring the substrate 2 to the recovery hand 212, and are capable of holding the substrate 2 by vacuum suction. In this embodiment, at least three pin-shaped members 6 are fixed to the coarse movement stage 5 and are provided upright relative to the holding surface of the substrate chuck 3 that holds the substrate 2. Because the pin-shaped members 6 are fixed to the coarse movement stage 5, they are driven together with the coarse movement stage 5. Note that in this embodiment, at least two pin-shaped members 6 are provided, but the number of pin-shaped members 6 is not limited as long as the substrate 2 can be held sufficiently and stably given the size, material, and mass of the substrate 2.

[0023] The coarse movement stage 5 is a stage that moves linearly in the X and Y directions and rotates in the θZ direction. The coarse movement stage 5 is controlled to follow the position of the fine movement stage 4 via an actuator such as a linear motor based on the distance between the coarse movement stage 5 and the fine movement stage 4 measured by, for example, a capacitance sensor within the XY plane.

[0024] Temperature-controlled gas is supplied from a gas supply port (not shown) provided in the exposure apparatus 200 to the external space (external space of the substrate chuck 3), which is the space around the substrate stage 1, and the temperature, humidity, etc. around the substrate stage 1 are maintained at predetermined values. Hereinafter, the external space of the substrate stage 1, in which the temperature, humidity, etc. around the substrate stage 1 are maintained at predetermined values, may be referred to as the stage space.

[0025] The off-axis scope 209 detects a mark (alignment mark) provided on the substrate 2 held by the substrate stage 1, thereby measuring the position of the substrate 2.

[0026] The control unit 100 is configured as an information processing device (computer) including a CPU, memory, etc. The control unit 100 comprehensively controls each unit of the exposure apparatus 200 in accordance with a program stored in the storage unit to operate the exposure apparatus 200. The control unit 100 controls, for example, a sequence (exposure sequence) related to the exposure process for exposing the substrate 2, a sequence (supply sequence) for supplying the substrate 2 to the substrate stage 1, a sequence (recovery sequence) for recovering the substrate 2 from the substrate stage 1, etc.

[0027] This embodiment provides a new technique for the substrate 2 recovery sequence. The substrate 2 recovery sequence includes, after the substrate 2 is exposed, transferring the substrate 2 held by the substrate stage 1 from the substrate chuck 3 to the pin-shaped members 6. Here, in the recovery sequence, specifically, in the unload sequence in which the substrate 2 is released from the substrate chuck 3, it is preferable to supply gas to the space between the substrate 2 and the substrate chuck 3. However, if the amount of gas supplied to the space between the substrate 2 and the substrate chuck 3 is too large, the substrate 2 will float and slide from the substrate chuck 3. On the other hand, if the amount of gas supplied to the space between the substrate 2 and the substrate chuck 3 is too small, adhesion between the substrate 2 and the substrate chuck 3 will remain, and the substrate chuck 3 will be worn out due to the substrate 2 being forcibly removed from the substrate chuck 3. Furthermore, when the vacuum applied to the substrate 2 is released, time is required for the gas to fill the vacuum-applied space, which increases the unload time and reduces productivity. Therefore, in this embodiment, a new technique is provided that makes it possible to reduce wear on the substrate chuck 3 while suppressing lateral sliding of the substrate 2 in the recovery sequence (unload sequence).

[0028] First, a method for holding the substrate 2 by vacuum suction with the substrate chuck 3 and a method for supplying gas to the space between the substrate 2 and the substrate chuck 3 will be described. Note that, hereinafter, the space between the substrate 2 and the substrate chuck 3 may also be referred to as the first space. As shown in Fig. 2, the substrate stage 1 includes an ejection mechanism EM used when the substrate 2 is held by the substrate chuck 3, and a supply mechanism SM and a release mechanism OM used when releasing the substrate 2 from the substrate chuck 3. Fig. 2 is a schematic diagram showing an example of the configuration of the substrate stage 1.

[0029] The discharge mechanism EM is a mechanism for discharging gas from a first space, which is the space between the substrate 2 and the substrate chuck 3, and includes a flow path (piping) 32 (third flow path), an electromagnetic valve 42 (third valve), and a regulator 51. The supply mechanism SM is a mechanism for supplying gas to the first space, and includes a flow path (piping) 30 (first flow path), an electromagnetic valve 40 (first valve), and a regulator 50. The opening mechanism OM is a mechanism for connecting the first space and the stage space, and includes a flow path (piping) 31 (second flow path) and an electromagnetic valve 41 (second valve).

[0030] The substrate stage 1 uses an exhaust mechanism EM to exhaust gas from a first space, which is the space between the substrate 2 and the substrate chuck 3, and reduce the pressure, thereby vacuum-suctioning and holding the substrate 2 with the substrate chuck 3. Flow paths 30, 31, and 32 are connected to the substrate chuck 3. The substrate chuck 3 is held by vacuum suction on the fine movement stage 4. The fine movement stage 4 is placed on the coarse movement stage 5. In this embodiment, the solenoid valves 40, 41, and 42 and the regulators 50 and 51 are incorporated into the coarse movement stage 5.

[0031] Flow path 31 connects a first space, which is the space between substrate 2 and substrate chuck 3, to a stage space via an electromagnetic valve 41 provided in flow path 31. Flow path 30 connects the first space to a positive pressure tank 7, which is a positive pressure source (gas supply source) that generates positive pressure, via an electromagnetic valve 40 provided in flow path 30. The positive pressure tank 7 is provided outside coarse movement stage 5 and is configured, for example, as factory equipment. The electromagnetic valve 40 is disposed between the positive pressure tank 7 and substrate chuck 3. Flow path 32 connects the first space, which is the space between substrate 2 and substrate chuck 3, to a vacuum pump 8 that generates negative pressure via an electromagnetic valve 42 provided in flow path 32.

[0032] The regulator 51 is disposed between the vacuum pump 8 and the substrate chuck 3, more specifically, between the vacuum pump 8 and the solenoid valve 42, and is capable of adjusting the pressure in the first space to a desired vacuum pressure (pressure). In order to supply the pressure adjusted by the regulator 51 to the substrate chuck 3, the solenoid valve 42 is disposed closer to the substrate chuck 3 than the regulator 51. Under the control of the control unit 100, when the solenoid valve 42 is turned ON (i.e., the solenoid valve 42 is opened), the pressure in the first space is adjusted by the vacuum pump 8. Furthermore, under the control of the control unit 100, when the solenoid valve 42 is turned OFF (i.e., the solenoid valve 42 is closed), the pressure in the first space is no longer adjusted by the vacuum pump 8.

[0033] The regulator 50 is disposed between the positive pressure tank 7 and the substrate chuck 3, specifically between the positive pressure tank 7 and the solenoid valve 40, and is capable of adjusting the pressure of the gas supplied from the positive pressure tank 7 to a desired pressure. Adjusting the pressure of the gas supplied from the positive pressure tank 7 also means adjusting the flow rate of the gas supplied from the positive pressure tank 7. In order to supply the pressure adjusted by the regulator 50 to the substrate chuck 3, the solenoid valve 40 is disposed closer to the substrate chuck 3 than the regulator 50. Under the control of the control unit 100, when the solenoid valve 40 is turned ON (i.e., the solenoid valve 40 is opened), the positive pressure tank 7 adjusts the pressure of the first space. Furthermore, under the control of the control unit 100, when the solenoid valve 40 is turned OFF (i.e., the solenoid valve 40 is closed), the positive pressure tank 7 no longer adjusts the pressure of the first space.

[0034] The solenoid valves 40, 41, and 42 may be replaced with servo valves whose opening and closing degrees can be freely set, proportional solenoid valves whose opening and closing degrees can be controlled in proportion to electric current, etc. In addition, although a regulator is not provided for the flow path 31 in this embodiment, a regulator may be provided between the solenoid valve 41 and the stage space to adjust the flow rate of the gas flowing through the flow path 31.

[0035] When the substrate 2 is held by the substrate chuck 3, the pressure in the first space is reduced by the vacuum pump 8 by turning on the electromagnetic valve 42, and the substrate 2 is vacuum-sucked onto the substrate chuck 3.

[0036] When the substrate 2 is released from the substrate chuck 3, the solenoid valve 42 is turned OFF and the solenoid valves 40 and 41 are turned ON, thereby supplying gas to the first space from the stage space and the positive pressure tank 7. In other words, when the substrate 2 is released from the substrate chuck 3, the supply mechanism SM and the release mechanism OM are controlled so that the gas is supplied from the positive pressure tank 7 to the first space and the first space communicates with the stage space. As a result, in this embodiment, the space between the substrate 2 and the substrate chuck 3 can be quickly pressurized and the vacuum applied to the substrate 2 can be released in a short time, thereby avoiding a long unloading time and suppressing a decrease in productivity.

[0037] 3 is a view showing the substrate stage 1 as viewed from the +Z direction. In this embodiment, the substrate chuck 3 is provided with an annular seal portion 91 along the outer periphery of the substrate chuck 3, but it is not essential to provide the seal portion 91 on the substrate chuck 3. Furthermore, the number and arrangement of the seal portions 91 provided on the substrate chuck 3 are not limited.

[0038] The substrate chuck 3 is provided with a plurality of protrusions (not shown) called chuck pins, and the chuck pins define a holding surface that holds the substrate 2. In the substrate chuck 3, a supply hole 20 (first hole) communicating with the flow path 30 is provided at a first position, and an open hole 21 (second hole) communicating with the flow path 31 is provided at a second position different from the first position. In addition, in the substrate chuck 3, a discharge hole 22 (third hole) communicating with the flow path 32 is provided at a third position different from the first and second positions.

[0039] In this embodiment, the eight supply holes 20 and the eight open holes 21 are provided alternately and at equal intervals on the same circumference (concentrically) at the same distance from the center of the substrate chuck 3, but this is not limited to this. Also, the three discharge holes 22 are provided on the same circumference (concentrically) at the same distance from the center of the substrate chuck 3, but this is not limited to this.

[0040] 3, the substrate chuck 3 and the fine movement stage 4 are provided with through holes 10 for passing the pin-shaped members 6. Therefore, the fine movement stage 4 can be driven in the Z direction without interfering with the pin-shaped members 6.

[0041] The operation of holding the substrate 2 by vacuum suction with the substrate chuck 3 is performed by the exhaust mechanism EM exhausting gas from the first space, which is the space between the substrate 2 and the substrate chuck 3, through the exhaust holes 22. In this way, by creating a vacuum between the substrate 2 and the tiny chuck pins through the exhaust holes 22, the substrate chuck 3 can hold the substrate 2 by vacuum suction with a uniform force. In this embodiment, the presence of the seal portion 91 between the substrate 2 and the substrate chuck 3 prevents gas (atmospheric air) from entering from the stage space, making it possible to vacuum suction the substrate 2.

[0042] The operation of releasing the substrate 2 held by the substrate chuck 3 is performed by the supply mechanism SM supplying gas from the positive pressure tank 7 to the first space through the supply hole 20, and the opening mechanism OM connecting the first space to the stage space through the opening hole 21. As described above, if the amount of gas supplied from the positive pressure tank 7 to the first space is excessive, the substrate 2 will slide sideways, and if the amount of gas supplied from the positive pressure tank 7 to the first space is insufficient, the substrate chuck 3 will be worn.

[0043] Next, with reference to Figures 4(a), 4(b), and 4(c), a method for transferring the substrate 2 from the substrate chuck 3 to the pin-shaped members 6 will be described. Figures 4(a) to 4(c) are cross-sectional views of the substrate stage 1.

[0044] The fine movement stage 4 is driven in the Z direction along the pin-shaped members 6. The fine movement stage 4 can also be driven while tilting in the Z direction depending on the positions of the three pin-shaped members 6 in the Z direction. As described above, the pin-shaped members 6 are fixed to the coarse movement stage 5, which can be driven in the X and Y directions. The positions of the pin-shaped members 6 are measured by measuring instruments including, for example, an interferometer, a capacitance sensor, an encoder, etc.

[0045] The pin-shaped members 6 are connected to the vacuum pump 9 via the flow path 35. A regulator 73 and a solenoid valve 43 are provided between the vacuum pump 9 and the pin-shaped members 6. The solenoid valve 43 is disposed closer to the pin-shaped members 6 than the regulator 51 in order to supply the pressure adjusted by the regulator 73 to the pin-shaped members 6. When the solenoid valve 43 is turned ON (i.e., the solenoid valve 43 is opened) under the control of the control unit 100, the vacuum pump 9 adjusts the pressure in the space between the substrate 2 and the substrate chuck 3 via the pin-shaped members 6. When the solenoid valve 43 is turned OFF (i.e., the solenoid valve 43 is closed) under the control of the control unit 100, the vacuum pump 9 no longer adjusts the pressure in the space between the substrate 2 and the substrate chuck 3 via the pin-shaped members 6. In this embodiment, the solenoid valve 43 and the regulator 73 are provided outside the coarse movement stage 5, i.e., in the stage space; however, they may be incorporated into the coarse movement stage 5. The vacuum pump 9 is configured as, for example, factory equipment.

[0046] Referring to FIG. 4(a), the fine movement stage 4 is positioned on the +Z side, and the substrate chuck 3 holds the substrate 2 by vacuum suction. In FIG. 4(b), the fine movement stage 4 is driven in the -Z direction, as indicated by the arrow, so that the pin-shaped members 6 come into contact with the substrate 2. At this time, the driving of the fine movement stage 4 may be stopped. Once the pin-shaped members 6 come into contact with the substrate 2, the substrate chuck 3 releases its hold on the substrate 2. Furthermore, by turning on the solenoid valve 43, the pin-shaped members 6 hold the substrate 2 by vacuum suction. Then, while the pin-shaped members 6 are holding the substrate 2, the fine movement stage 4 is further driven in the -Z direction, as shown in FIG. 4(c), so that the substrate 2 is transferred from the substrate chuck 3 to the pin-shaped members 6.

[0047] Here, a method of transferring the substrate 2 from the substrate chuck 3 to the pin-shaped members 6 by driving the fine movement stage 4 has been described, but the present invention is not limited to this and any method can be used as long as it is possible to change the relative position in the Z direction between the substrate chuck 3 and the pin-shaped members 6. For example, the substrate 2 may be transferred from the substrate chuck 3 to the pin-shaped members 6 by driving the entire pin-shaped members 6 or the tip portions thereof in the Z direction. Changing the relative position between the substrate chuck 3 and the pin-shaped members 6 is synonymous with driving the substrate chuck 3 and the pin-shaped members 6 relatively.

[0048] 5(a), 5(b), and 5(c), a method for transferring the substrate 2 from the substrate chuck 3 to the pin-shaped members 6 by driving the entire pin-shaped members 6 in the Z direction will be described. FIGS. 5(a) to 5(c) are cross-sectional views of the substrate stage 1. The driving units for driving the pin-shaped members 6 may be included in the pin-shaped members 6, or may be provided outside the pin-shaped members 6 and connected to them. As described above, the substrate 2 may be transferred from the substrate chuck 3 to the pin-shaped members 6 by driving (extending) the tips of the pin-shaped members 6 in the Z direction, rather than driving the entire pin-shaped members 6.

[0049] Referring to FIG. 5(a), the pin-shaped members 6 are positioned on the -Z direction side and are not in contact with the substrate 2. In this state, the substrate chuck 3 holds the substrate 2. In FIG. 5(b), the pin-shaped members 6 are driven in the +Z direction as indicated by the arrow, bringing the pin-shaped members 6 into contact with the substrate 2. Once the pin-shaped members 6 come into contact with the substrate 2, the driving of the pin-shaped members 6 is stopped, and the substrate chuck 3 releases its hold on the substrate 2. Furthermore, the solenoid valve 43 is turned ON, causing the pin-shaped members 6 to vacuum-suck and hold the substrate 2. Then, while the pin-shaped members 6 are holding the substrate 2, the pin-shaped members 6 are further driven in the +Z direction as shown in FIG. 5(c), transferring the substrate 2 from the substrate chuck 3 to the pin-shaped members 6.

[0050] Below, we will explain in detail why this embodiment makes it possible to quickly pressurize the space between the substrate 2 and the substrate chuck 3 and release the vacuum applied to the substrate 2 in a short period of time while suppressing lateral sliding of the substrate 2 and wear of the substrate chuck 3.

[0051] In this embodiment, in the substrate stage 1 that functions as a substrate holding device, the flow path 31 is incorporated into the coarse movement stage 5 and communicates with a space that is continuous with the opposite side of the back surface of the substrate 2 (the surface opposite to the surface held by the substrate chuck 3), i.e., the stage space. When gas is supplied through the supply hole 20, the electromagnetic valve 41 is turned on, thereby communicating a first space, which is the space between the substrate 2 and the substrate chuck 3, with the stage space via the open hole 21 and the flow path 31. As a result, when the substrate 2 is released from the substrate chuck 3, not only gas from the positive pressure tank 7 but also gas from the stage space is supplied (flows) into the first space, so that the vacuum applied to the substrate 2 can be released in a short time. Therefore, in this embodiment, it is possible to avoid a long unloading time and suppress a decrease in productivity.

[0052] Furthermore, in this embodiment, when the pressure in the first space, which is the space between the substrate 2 and the substrate chuck 3, becomes greater than the pressure in the stage space, a gas flow is formed from the first space toward the stage space via the open hole 21 (and the flow path 31). This allows excess gas supplied to the first space to escape into the stage space, thereby suppressing lateral sliding of the substrate 2 and wear of the substrate chuck 3.

[0053] In this embodiment, the electromagnetic valve 41 provided in the flow path 31 communicating with the stage space is incorporated into the coarse movement stage 5. This makes it possible to shorten the length of the flow path 31 and improve the responsiveness of the flow of gas supplied from the stage space to the first space, which is the space between the substrate 2 and the substrate chuck 3, thereby contributing to shortening the time required for the substrate chuck 3 to release its hold on the substrate 2.

[0054] Furthermore, when a gas flow is formed from the first space, which is the space between the substrate 2 and the substrate chuck 3, toward the stage space through the open holes 21, the first space and the stage space may be connected through the gap between the substrate 2 and the substrate chuck 3. This allows excess gas supplied to the first space to escape to the stage space more efficiently, thereby more reliably suppressing wear of the substrate chuck 3. Note that, because there is also a gas flow from the first space toward the stage space through the open holes 21, not all of the gas supplied from the positive pressure tank 7 to the first space through the supply holes 20 escapes (flows out) through the gap between the substrate 2 and the substrate chuck 3. Therefore, the lateral slippage of the substrate 2 is still suppressed.

[0055] In this embodiment, one positive pressure tank 7 is provided, but multiple positive pressure tanks may be provided for the flow path 30. In this case, the amount of gas supplied to the first space, which is the space between the substrate 2 and the substrate chuck 3, can be increased, making it possible to supply a sufficient amount of gas even to a substrate with significant warpage and a large first space. Similarly, in this embodiment, one vacuum pump 8 is provided, but multiple vacuum pumps may be provided for the flow path 32. In this case, the amount of gas discharged from the first space can be increased, making it possible to discharge a sufficient amount of gas even to a substrate with significant warpage and a large first space.

[0056] In the present embodiment, the timing at which the solenoid valve 40 and the solenoid valve 41 are turned on is not particularly limited. For example, when it is necessary to supply gas to the first space, which is the space between the substrate 2 and the substrate chuck 3, in a shorter time, control can be performed so that the solenoid valve 40 is turned on first and then the solenoid valve 41 is turned on. Furthermore, when it is necessary to more reliably suppress lateral slippage of the substrate 2, control can be performed so that the solenoid valve 41 is turned on first and then the solenoid valve 40 is turned on. In this way, the timing at which the solenoid valves 40 and 41 are turned on, i.e., the timing at which the gas is supplied through the supply hole 20 and the timing at which the first space and the stage space are connected through the release hole 21, can be controlled (set) according to the purpose.

[0057] Second Embodiment A substrate stage 1 in the second embodiment will be described with reference to Fig. 6. Fig. 6 is a schematic diagram showing an example of the configuration of the substrate stage 1. In this embodiment, as shown in Fig. 6, the substrate stage 1 has a configuration in which a flow path 30 for supplying gas from a positive pressure tank 7 to a first space, which is the space between the substrate 2 and the substrate chuck 3, and a flow path 32 for discharging gas from the first space are shared.

[0058] 6, the flow path 33 functions as a flow path for supplying gas from the positive pressure tank 7 to the first space and a flow path for discharging gas from the first space. The flow paths 30 and 32 merge between the substrate chuck 3 and the electromagnetic valves 40 and 42. Depending on whether the electromagnetic valves 40 and 42 are switched ON or OFF, gas is supplied to the first space or discharged from the first space via the supply and discharge holes 23.

[0059] When the substrate 2 is held by the substrate chuck 3, the solenoid valve 42 is turned ON and the solenoid valves 40 and 41 are turned OFF, whereby the pressure in the first space is reduced by the vacuum pump 8 and the substrate 2 is vacuum-sucked into the substrate chuck 3. As described above, in this embodiment, the exhaust mechanism EM exhausts gas from the first space through the supply hole 20 (which also functions as the supply and exhaust hole 23) provided in the substrate chuck in the first embodiment.

[0060] When the substrate 2 is released from the substrate chuck 3, the solenoid valve 42 is turned OFF and the solenoid valves 40 and 41 are turned ON, thereby supplying gas to the first space from the stage space and the positive pressure tank 7. In other words, when the substrate 2 is released from the substrate chuck 3, the supply mechanism SM and the release mechanism OM are controlled so that the gas is supplied from the positive pressure tank 7 to the first space and the first space communicates with the stage space. As a result, in this embodiment, the space between the substrate 2 and the substrate chuck 3 can be quickly pressurized and the vacuum applied to the substrate 2 can be released in a short time, thereby avoiding a long unloading time and suppressing a decrease in productivity.

[0061] Furthermore, in this embodiment, when the pressure in the first space, which is the space between the substrate 2 and the substrate chuck 3, becomes greater than the pressure in the stage space, a gas flow is formed from the first space toward the stage space via the open hole 21 (and the flow path 31). This allows excess gas supplied to the first space to escape into the stage space, thereby suppressing lateral sliding of the substrate 2 and wear of the substrate chuck 3. In this case, the first space and the stage space may be connected via a gap between the substrate 2 and the substrate chuck 3. This allows excess gas supplied to the first space to escape into the stage space more efficiently, thereby more reliably suppressing wear of the substrate chuck 3.

[0062] In this embodiment, the device configuration can be simplified by sharing the flow path 30 for supplying gas from the positive pressure tank 7 to the first space, which is the space between the substrate 2 and the substrate chuck 3, and the flow path 32 for discharging the gas from the first space. Even if the flow path 30 and the flow path 32 are shared, when releasing the substrate 2 from the substrate chuck 3, it is possible not only to supply gas from the positive pressure tank 7 to the first space but also to open the first space to the stage space (open to the atmosphere) via the open hole 21. Therefore, it remains the same that the gas is supplied (flows) from the stage space to the first space, and the time required for releasing the substrate 2 from the substrate chuck 3 can be shortened.

[0063] The numbers of positive pressure tanks 7 and vacuum pumps 8, and the timings at which the solenoid valves 40 and 41 are turned on are the same as those in the first embodiment.

[0064] Third Embodiment A substrate stage 1 in the third embodiment will be described with reference to Fig. 7. Fig. 7 is a schematic diagram showing an example of the configuration of the substrate stage 1. In this embodiment, as shown in Fig. 7, the substrate stage 1 has a configuration in which a flow path 31 for connecting a first space, which is the space between the substrate 2 and the substrate chuck 3, with the stage space (for opening the first space to the atmosphere) and a flow path 32 for discharging gas from the first space are shared.

[0065] 7, flow path 34 functions as a flow path for connecting a first space, which is the space between the substrate 2 and the substrate chuck 3, with a stage space, and as a flow path for discharging gas from the first space. Flow path 31 and flow path 32 merge between the substrate chuck 3 and the electromagnetic valves 41 and 42. Depending on whether the electromagnetic valves 41 and 42 are switched ON or OFF, the first space is connected to the stage space and gas is discharged from the first space via the open exhaust hole 24.

[0066] When the substrate 2 is held by the substrate chuck 3, the solenoid valve 42 is turned ON and the solenoid valves 40 and 41 are turned OFF, whereby the pressure in the first space is reduced by the vacuum pump 8 and the substrate 2 is vacuum-sucked onto the substrate chuck 3. As described above, in this embodiment, the exhaust mechanism EM exhausts gas from the first space through the open hole 21 (which also functions as the open exhaust hole 24) provided in the substrate chuck in the first embodiment.

[0067] When the substrate 2 is released from the substrate chuck 3, the solenoid valve 42 is turned OFF and the solenoid valves 40 and 41 are turned ON, thereby supplying gas to the first space from the stage space and the positive pressure tank 7. In other words, when the substrate 2 is released from the substrate chuck 3, the supply mechanism SM and the release mechanism OM are controlled so that the gas is supplied from the positive pressure tank 7 to the first space and the first space communicates with the stage space. As a result, in this embodiment, the space between the substrate 2 and the substrate chuck 3 can be quickly pressurized and the vacuum applied to the substrate 2 can be released in a short time, thereby avoiding a long unloading time and suppressing a decrease in productivity.

[0068] Furthermore, in this embodiment, when the pressure in the first space, which is the space between the substrate 2 and the substrate chuck 3, becomes greater than the pressure in the stage space, a gas flow is formed from the first space toward the stage space via the open exhaust hole 24 (and the flow path 34). This allows excess gas supplied to the first space to escape into the stage space, thereby suppressing lateral sliding of the substrate 2 and wear of the substrate chuck 3. In this case, the first space and the stage space may be connected via a gap between the substrate 2 and the substrate chuck 3. This allows excess gas supplied to the first space to escape into the stage space more efficiently, thereby more reliably suppressing wear of the substrate chuck 3.

[0069] In this embodiment, the device configuration can be simplified by sharing the flow path 31, which connects the first space, which is the space between the substrate 2 and the substrate chuck 3, with the stage space, and the flow path 32, which exhausts gas from the first space. Even if the flow path 31 and the flow path 32 are shared, when releasing the substrate 2 from the substrate chuck 3, it is possible not only to supply gas from the positive pressure tank 7 to the first space but also to open the first space to the stage space (open to the atmosphere) via the open exhaust hole 24. Therefore, it remains the same that gas is supplied (flows) from the stage space to the first space, and the time required for releasing the substrate 2 from the substrate chuck 3 can be shortened.

[0070] The numbers of positive pressure tanks 7 and vacuum pumps 8, and the timings at which the solenoid valves 40 and 41 are turned on are the same as those in the first embodiment.

[0071] <Fourth embodiment> In the fourth embodiment, the timing at which each of the solenoid valves 40, 41, 42, and 43 is turned ON will be described using the substrate stage 1 shown in Fig. 2 as an example. Fig. 8 is a diagram showing the timing at which each of the solenoid valves 40, 41, 42, and 43 is turned ON in the operation of transferring the substrate 2 from the substrate chuck 3 to the pin-shaped members 6. In Fig. 8, the horizontal axis represents time.

[0072] Referring to FIG. 8, T0 indicates the time when the operation of transferring the substrate 2 from the substrate chuck 3 to the pin-shaped members 6 begins. At time T0, as shown in FIG. 4(a), the fine movement stage 4 is positioned on the +Z direction side, and the substrate chuck 3 holds the substrate 2 by vacuum suction. T1 indicates the time when the substrate 2 and the pin-shaped members 6 come into contact with each other, as shown in FIG. 4(b). T2 indicates the time when the operation of transferring the substrate 2 from the substrate chuck 3 to the pin-shaped members 6 is completed, as shown in FIG. 4(c). For ease of understanding, FIG. 8 also shows the components connected to each solenoid valve via a flow path. Note that FIG. 8 only shows the time when the solenoid valve is ON from time T0 to time T2, and does not show the time when the solenoid valve is OFF.

[0073] As shown in Figure 8, at time T0, the solenoid valve 42 is turned ON, and the substrate 2 is held by vacuum suction using the substrate chuck 3. The fine movement stage 4 is driven in the -Z direction, and at time T1, the substrate 2 comes into contact with the pin-shaped members 6. At time T1, the solenoid valve 42 is turned OFF, and the solenoid valve 43 is turned ON, and the substrate 2 is held by the pin-shaped members 6 by vacuum suction. At the same time that the substrate 2 is held by the pin-shaped members 6, the solenoid valve 40 is turned ON, and gas is supplied from the positive pressure tank 7 via the supply hole 20 to the first space between the substrate 2 and the substrate chuck 3. As a result, the first space changes from a reduced pressure state (decompressed state) to atmospheric pressure.

[0074] By turning on the solenoid valve 40 and then turning on the solenoid valve 41, the first space and the stage space are connected via the open hole 21, and gas from the stage space is supplied to the first space (the first space is opened to the atmosphere). This shortens the time it takes for the first space to change from a reduced pressure state to atmospheric pressure, thereby suppressing a decrease in productivity. When the pressure in the first space reaches atmospheric pressure and becomes higher than the pressure in the stage space, gas flows from the first space to the stage space via the open hole 21. This suppresses lateral sliding of the substrate 2. Furthermore, at the edge of the substrate 2, a portion is formed where the first space and the stage space are connected via a gap between the substrate 2 and the substrate chuck 3, without going through the open hole 21. This suppresses wear on the substrate chuck 3 that occurs when the substrate 2 is separated from the substrate chuck 3.

[0075] In this way, controlling the supply mechanism SM and the opening mechanism OM so that the timing at which the solenoid valve 40 is turned on (opened) is earlier than the timing at which the solenoid valve 41 is turned on (opened) is effective when the substrate 2 has an upward convex shape. When the substrate 2 has an upward convex shape, when gas is supplied through the supply holes 20 to the first space between the substrate 2 and the substrate chuck 3, a large amount of gas is required for the first space to change from a reduced pressure state to atmospheric pressure. Therefore, the supply mechanism SM is controlled to increase the amount of gas supplied from the positive pressure tank 7 to the first space through the supply holes 20. However, if a large amount of gas is supplied to the first space at once, the substrate 2 may slide sideways. Therefore, in this embodiment, the solenoid valve 40 is turned on and then the solenoid valve 41 is turned on, thereby supplying gas to the first space in stages and suppressing sideways sliding of the substrate 2. By supplying gas to the first space, the pressure in the first space becomes atmospheric pressure, but if the pressure in the first space becomes higher than the pressure in the stage space, gas still flows from the first space to the stage space through the open hole 21 or through the gap between the substrate 2 and the substrate chuck 3. Therefore, wear of the substrate chuck 3 that occurs when the substrate 2 is separated from the substrate chuck 3 can be suppressed.

[0076] In this embodiment, the timing at which the solenoid valve 43 is turned on and the timing at which the solenoid valve 40 is turned on are made to coincide with each other, but the present invention is not limited to this. A certain amount of time is required for the pressure in the first space to reach atmospheric pressure after gas is supplied to the first space through the supply hole 20. Therefore, taking this time into consideration, the timing at which solenoid valve 40 is turned on may be set earlier than the timing at which solenoid valve 43 is turned on. This makes it possible to further suppress a decrease in productivity. The same applies to the timing at which solenoid valve 41 is turned on.

[0077] Fifth Embodiment In the fifth embodiment, the timing at which each of the solenoid valves 40, 41, 42, and 43 is turned ON will be described using the substrate stage 1 shown in FIG. 2 as an example. FIG. 9 is a diagram showing the timing at which each of the solenoid valves 40, 41, 42, and 43 is turned ON in the operation of transferring the substrate 2 from the substrate chuck 3 to the pin-shaped members 6. In FIG. 9, the horizontal axis represents time. Note that, in this embodiment, as shown in FIG. 9, only the timing at which the solenoid valve 40 is turned ON and the timing at which the solenoid valve 41 is turned ON differ from the fourth embodiment (FIG. 8). Specifically, in this embodiment, the supply mechanism SM and the open mechanism OM are controlled so that the timing at which the solenoid valve 40 is turned ON (opened) is later than the timing at which the solenoid valve 41 is turned ON (opened).

[0078] Controlling the timing of turning on each of the solenoid valves 40 and 41 in this embodiment is effective when the shape of the substrate 2 is downwardly convex. When the shape of the substrate 2 is downwardly convex, when the first space and the stage space communicate with each other through a gap between the substrate 2 and the substrate chuck 3 at the edge of the substrate 2, an increased amount of gas flows into the stage space from this gap, which may cause the substrate 2 to slide sideways. Therefore, in this embodiment, the solenoid valve 40 is turned on after the solenoid valve 41 is turned on, thereby reducing the amount of gas flowing into the stage space from the gap between the substrate 2 and the substrate chuck 3 and suppressing the substrate 2 from sliding sideways.

[0079] In the fourth and fifth embodiments, it has been described that the timing at which the solenoid valve 40 is turned on and the timing at which the solenoid valve 41 is turned on are differentiated depending on the shape of the substrate 2 (upward convex or downward convex). When the substrate 2 is flat, the supply mechanism SM and the opening mechanism OM are controlled so that the timing at which the solenoid valve 40 is turned on and the timing at which the solenoid valve 41 is turned on coincide. This effectively shortens the time it takes for the first space to change from a reduced pressure state to an atmospheric pressure state, while suppressing lateral slippage of the substrate 2. The timing at which the solenoid valves 40 and 41 are turned on can be controlled (set) according to the results of measuring the shape of the substrate 2 in advance. Such timing information is stored in a storage unit, such as a memory, of the control unit 100.

[0080] Sixth Embodiment In the sixth embodiment, the positional relationship between the supply hole 20 and the open hole 21 will be described. The open hole 21 is provided near the supply hole 20. When gas is supplied to the first space, which is the space between the substrate 2 and the substrate chuck 3, through the supply hole 20, there is a possibility that the gas may be suddenly supplied to the first space when the solenoid valve 40 is turned on. In this case, there is a concern that the first space and the stage space may unintentionally communicate with each other through the gap between the substrate 2 and the substrate chuck 3 at the edge of the substrate 2, causing a large amount of gas to flow from the first space to the stage space, resulting in the substrate 2 sliding sideways. However, by providing the open hole 21 near the supply hole 20, the conductance of the gas present in the first space when it flows from the supply hole 20 to the open hole 21 can be made lower than the conductance when it flows from the supply hole 20 to the gap at the edge of the substrate 2. This reduces the possibility of the gas present in the first space unintentionally flowing from the gap at the edge of the substrate 2 into the stage space, thereby suppressing the substrate 2 from sliding sideways.

[0081] In this embodiment, providing the open hole 21 near the supply hole 20 specifically means that the supply hole 20 and the open hole 21 are provided in the substrate chuck 3 so that the distance between them is 5 to 75 times the diameter of the open hole 21. If the distance between the supply hole 20 and the open hole 21 is short, the gas supplied to the first space flows into the nearest open hole 21, making it difficult to increase the pressure in the first space. This makes it more likely that the substrate chuck 3 will wear when the substrate 2 is separated from the substrate chuck 3. On the other hand, if the distance between the supply hole 20 and the open hole 21 is long, it takes time for the gas supplied to the first space to flow into the open hole 21, making it more likely that the pressure in the first space will increase. As a result, before the gas supplied to the first space flows into the open hole 21, the gas may flow through a gap at the edge of the substrate 2, making it more likely that the substrate 2 will slide sideways. Therefore, it is preferable that the supply holes 20 and the open holes 21 are provided in the substrate chuck 3 so that the distance between the supply holes 20 and the open holes 21 is 5 to 75 times the diameter of the open holes 21 .

[0082] A specific example of the arrangement of open holes 21 and supply holes 20 will be described below, so that open holes 21 are located near supply holes 20, i.e., so that the distance between supply hole 20 and open hole 21 is 5 to 75 times the diameter of open hole 21.

[0083] 3, supply holes 20 are provided at a plurality of first positions on a circumference CF1 (on a first circumference) that is a first distance from the center CP of the substrate chuck 3, and open holes 21 are provided at a plurality of second positions on the circumference CF1 that are different from the plurality of first positions. Also, the supply holes 20 and the open holes 21 are provided alternately on the circumference CF1. In this case, it is preferable that the supply holes 20 and the open holes 21 are provided at equal intervals.

[0084] 10(a), the supply holes 20 and the open holes 21 may be provided on different circumferences. Specifically, the supply holes 20 are provided at a plurality of first positions on a circumference CF3 (on the first circumference) that is a first distance from the center CP of the substrate chuck 3. Meanwhile, the open holes 21 are provided at a plurality of second positions on a circumference CF4 (on the second circumference) that is a second distance from the center CP of the substrate chuck 3 that is different from the first distance. In this case, it is preferable that the supply holes 20 are provided at equal intervals on the circumference CF3 and the open holes 21 are provided at equal intervals on the circumference CF4. Furthermore, it is preferable that the first distance is smaller than the second distance and the open holes 21 are provided outward from the center CP of the substrate chuck 3 relative to the supply holes 20.

[0085] 10(b), the supply holes 20 and the open holes 21 may be provided concentrically. Specifically, the supply holes 20 are provided at a plurality of first positions on a circumference CF5 (on the first circumference) that are a first distance from the center CP of the substrate chuck 3, and at a plurality of first positions on a circumference CF6 (on the second circumference) that are a second distance from the center CP that is different from the first distance. Meanwhile, the supply holes 20 are provided at a plurality of second positions different from the first positions on the circumference CF5 (on the first circumference) that are a first distance from the center CP of the substrate chuck 3, and at a plurality of second positions different from the first positions on the circumference CF6 (on the second circumference) that are a second distance from the center CP. The supply holes 20 and the open holes 21 are provided alternately on each of the circumferences CF5 and CF6. In this case, it is preferable that the supply holes 20 and the open holes 21 are provided at equal intervals. Furthermore, it is preferable that the supply hole 20 is aligned with (i.e., on) a first straight line SL1 passing through the center CP of the substrate chuck 3, and the open hole 21 is aligned with (i.e., on) a second straight line SL2 passing through the center CP and different from the first straight line SL1.

[0086] Seventh Embodiment The method for manufacturing an article according to an embodiment of the present invention is suitable for manufacturing articles such as devices (semiconductor elements, magnetic storage media, liquid crystal display elements, etc.). This manufacturing method includes the steps of forming a pattern on a substrate using an exposure apparatus 200, processing the substrate on which the pattern has been formed, and manufacturing an article from the processed substrate. This manufacturing method may also include other well-known steps (oxidation, film formation, vapor deposition, doping, planarization, etching, resist stripping, dicing, bonding, packaging, etc.). The method for manufacturing an article according to this embodiment is advantageous over conventional methods in at least one of the performance, quality, productivity, and production cost of the article.

[0087] The disclosure of the present specification includes the following holding device, substrate processing apparatus, and method for manufacturing an article.

[0088] (Item 1) A holding device for holding a substrate, a chuck for holding the substrate; a supply mechanism for supplying a gas to a first space between the substrate and the chuck through a first hole provided at a first position of the chuck; an opening mechanism for communicating the first space with an external space of the chuck through a second hole provided at a second position different from the first position of the chuck; a control unit that controls the supply mechanism and the release mechanism so that the gas is supplied to the first space and the first space communicates with the external space when the substrate is released from the chuck; A holding device comprising:

[0089] (Item 2) 2. The holding device according to item 1, wherein the first hole and the second hole are provided in the chuck such that the distance between the first position and the second position is 5 to 75 times the diameter of the second hole.

[0090] (Item 3) the first holes are provided at a plurality of first positions on a first circumference that are a first distance from a center of the chuck; the second holes are provided at a plurality of second positions on the first circumference that are different from the plurality of first positions, The first holes and the second holes are alternately provided on the first circumference. 3. The holding device according to item 1 or 2.

[0091] (Item 4) 4. The holding device according to item 3, wherein the first holes and the second holes are provided at equal intervals on the first circumference.

[0092] (Item 5) the first holes are provided at a plurality of first positions on a second circumference that are a second distance from the center of the chuck that is different from the first distance; the second holes are provided at a plurality of second positions on the second circumference that are different from the plurality of first positions, The first holes and the second holes are alternately provided on the second circumference. 5. The holding device according to item 3 or 4,

[0093] (Item 6) 6. The holding device according to item 5, wherein the first holes and the second holes are provided at equal intervals on the second circumference.

[0094] (Item 7) the first hole is provided on a first straight line passing through the center of the chuck, The second hole is provided on a second straight line that passes through the center of the chuck and is different from the first straight line. 7. The holding device according to item 5 or 6,

[0095] (Item 8) the first holes are provided at a plurality of first positions on a first circumference that are a first distance from a center of the chuck; The second holes are provided at a plurality of second positions on a second circumference that are a second distance from the center of the chuck that is different from the first distance. 3. The holding device according to item 1 or 2.

[0096] (Item 9) the first holes are provided at equal intervals on the first circumference, The second holes are provided at equal intervals on the second circumference. Item 9. The holding device according to item 8.

[0097] (Item 10) 10. The holding device according to item 8 or 9, wherein the first distance is smaller than the second distance.

[0098] (Item 11) 11. The holding device according to any one of items 1 to 10, further comprising an exhaust mechanism for exhausting gas from the first space through a third hole provided at a third position of the chuck, which is different from the first position and the second position, when the substrate is held by the chuck.

[0099] (Item 12) 11. The holding device according to any one of items 1 to 10, further comprising an exhaust mechanism for exhausting gas from the first space through the first hole provided in the chuck when the substrate is held by the chuck.

[0100] (Item 13) 11. The holding device according to any one of items 1 to 10, further comprising an exhaust mechanism for exhausting gas from the first space through the second hole provided in the chuck when the substrate is held by the chuck.

[0101] (Item 14) the supply mechanism includes a first flow path connecting the first space and a gas supply source, and a first valve provided in the first flow path; the opening mechanism includes a second flow path connecting the first space and the external space, and a second valve provided in the second flow path, The control unit controlling the supply mechanism to open the first valve in order to supply the gas from the supply source to the first space through the first flow path when releasing the substrate from the chuck; controlling the opening mechanism to open the second valve to communicate the first space with the external space when releasing the substrate from the chuck; 14. The holding device according to any one of items 1 to 13,

[0102] (Item 15) Item 15. The holding device of item 14, wherein the control unit controls the supply mechanism and the release mechanism so that the timing of opening the first valve and the timing of opening the second valve coincide when releasing the substrate from the chuck.

[0103] (Item 16) Item 15. The holding device of item 14, wherein the control unit controls the supply mechanism and the release mechanism so that the timing of opening the first valve is earlier than the timing of opening the second valve when the chuck releases the substrate from its hold.

[0104] (Item 17) Item 15. The holding device of item 14, wherein the control unit controls the supply mechanism and the release mechanism so that the timing of opening the first valve is later than the timing of opening the second valve when the chuck releases the substrate from its hold.

[0105] (Item 18) A substrate processing apparatus for processing a substrate, a holding device for holding the substrate; The holding device includes the holding device according to any one of items 1 to 17. A substrate processing apparatus comprising:

[0106] (Item 19) an illumination optical system that illuminates the original; a projection optical system that projects the pattern of the original onto the substrate; Item 19. The substrate processing apparatus according to item 18, further comprising:

[0107] (Item 20) Forming a pattern on a substrate using the substrate processing apparatus according to item 18 or 19; processing the substrate on which the pattern has been formed in the process; manufacturing an article from the processed substrate; A method for manufacturing an article, comprising:

[0108] The invention is not limited to the above-described embodiments, and various changes and modifications can be made without departing from the spirit and scope of the invention. Accordingly, the following claims are appended to apprise the public of the scope of the invention. [Explanation of symbols]

[0109] 1: Substrate stage 2: Substrate 3: Substrate chuck 7: Positive pressure tank 8: Vacuum pump 20: Supply hole 21: Opening hole 22: Discharge hole 30, 31, 32: Flow path SM: Supply mechanism OM: Opening mechanism EM: Discharge mechanism 100: Control unit 200: Exposure device

Claims

1. A holding device for holding a substrate, a chuck for holding the substrate; a supply mechanism for supplying a gas to a first space between the substrate and the chuck through a first hole provided at a first position of the chuck; an opening mechanism for communicating the first space with an external space of the chuck through a second hole provided at a second position different from the first position of the chuck; a control unit that controls the supply mechanism and the release mechanism so that a period during which the holding of the substrate by the chuck is released includes a period during which the supply of the gas to the first space by the supply mechanism and the communication of the first space with the external space by the release mechanism are simultaneously performed; and a first period included in a period during which the chuck releases the substrate, during which the gas in the external space flows into the first space via the second hole; and a second period following the first period included in a period during which the chuck releases the substrate, during which the gas in the first space flows into the external space via the second hole. A holding device characterized by:

2. 2. The holding device according to claim 1, wherein the first hole and the second hole are provided in the chuck so that the distance between the first position and the second position is 5 to 75 times the diameter of the second hole.

3. the first holes are provided at a plurality of first positions on a first circumference that are a first distance from a center of the chuck; the second holes are provided at a plurality of second positions on the first circumference that are different from the plurality of first positions, The first holes and the second holes are alternately provided on the first circumference.

2. The holding device according to claim 1.

4. 4. The holding device according to claim 3, wherein the first holes and the second holes are provided at equal intervals on the first circumference.

5. the first holes are provided at a plurality of first positions on a second circumference that are a second distance from the center of the chuck that is different from the first distance; the second holes are provided at a plurality of second positions on the second circumference that are separate from the plurality of first positions, The first holes and the second holes are alternately provided on the second circumference.

4. The holding device according to claim 3.

6. 6. The holding device according to claim 5, wherein the first holes and the second holes are provided at equal intervals on the second circumference.

7. the first hole is provided on a first straight line passing through the center of the chuck; The second hole is provided on a second straight line that passes through the center of the chuck and is different from the first straight line.

6. The holding device according to claim 5.

8. the first holes are provided at a plurality of first positions on a first circumference that are a first distance from a center of the chuck; the second holes are provided at a plurality of second positions on a second circumference at a second distance from the center of the chuck that is different from the first distance; 2. The holding device according to claim 1.

9. the first holes are provided at equal intervals on the first circumference, The second holes are provided at equal intervals on the second circumference.

9. The holding device according to claim 8.

10. 9. The retaining device of claim 8, wherein the first distance is less than the second distance.

11. 2. The holding device according to claim 1, further comprising an exhaust mechanism for exhausting gas from the first space through a third hole provided at a third position of the chuck, which is different from the first position and the second position, when the substrate is held by the chuck.

12. 2. The holding device according to claim 1, further comprising an exhaust mechanism for exhausting gas from the first space through the first hole provided in the chuck when the substrate is held by the chuck.

13. 2. The holding device according to claim 1, further comprising an exhaust mechanism for exhausting gas from the first space through the second hole provided in the chuck when the substrate is held by the chuck.

14. the supply mechanism includes a first flow path connecting the first space and a gas supply source, and a first valve provided in the first flow path; the opening mechanism includes a second flow path connecting the first space and the external space, and a second valve provided in the second flow path, The control unit controlling the supply mechanism to open the first valve to supply the gas from the supply source to the first space through the first flow path; controlling the opening mechanism to open the second valve to communicate the first space with the external space; 2. The holding device according to claim 1.

15. The holding device according to claim 14 , wherein the control unit controls the supply mechanism and the release mechanism so that the timing of opening the first valve and the timing of opening the second valve coincide with each other.

16. The holding device according to claim 14 , wherein the control unit controls the supply mechanism and the release mechanism so that the first valve opens earlier than the second valve.

17. The holding device according to claim 14 , wherein the control unit controls the supply mechanism and the release mechanism so that the timing at which the first valve is opened is later than the timing at which the second valve is opened.

18. A holding device for holding a substrate, comprising: a chuck for holding the substrate; a supply mechanism for supplying a gas to a first space between the substrate and the chuck through a first hole provided at a first position of the chuck; an opening mechanism for communicating the first space with an external space of the chuck through a second hole provided at a second position different from the first position of the chuck; a control unit that controls the supply mechanism and the release mechanism so that a period during which the holding of the substrate by the chuck is released includes a period during which the supply of the gas to the first space by the supply mechanism and the communication of the first space with the external space by the release mechanism are simultaneously performed; and a holding device further comprising an exhaust mechanism for exhausting gas from the first space through the first hole provided in the chuck when the substrate is held by the chuck.

19. A holding device for holding a substrate, comprising: a chuck for holding the substrate; a supply mechanism for supplying a gas to a first space between the substrate and the chuck through a first hole provided at a first position of the chuck; an opening mechanism for communicating the first space with an external space of the chuck through a second hole provided at a second position different from the first position of the chuck; a control unit that controls the supply mechanism and the release mechanism so that a period during which the holding of the substrate by the chuck is released includes a period during which the supply of the gas to the first space by the supply mechanism and the communication of the first space with the external space by the release mechanism are simultaneously performed; and A holding device characterized in that the first hole and the second hole are provided in the chuck so that the distance between the first position and the second position is 5 to 75 times the diameter of the second hole.

20. A holding device for holding a substrate, comprising: a chuck for holding the substrate; a supply mechanism for supplying a gas to a first space between the substrate and the chuck through a first hole provided at a first position of the chuck; an opening mechanism for communicating the first space with an external space of the chuck through a second hole provided at a second position different from the first position of the chuck; a control unit that controls the supply mechanism and the release mechanism so that a period during which the holding of the substrate by the chuck is released includes a period during which the supply of the gas to the first space by the supply mechanism and the communication of the first space with the external space by the release mechanism are simultaneously performed; and the first holes are provided at a plurality of first positions on a first circumference that are a first distance from a center of the chuck; the second holes are provided at a plurality of second positions on the first circumference that are different from the plurality of first positions, The first holes and the second holes are alternately provided on the first circumference. A holding device characterized by:

21. A holding device for holding a substrate, comprising: a chuck for holding the substrate; a supply mechanism for supplying a gas to a first space between the substrate and the chuck through a first hole provided at a first position of the chuck; an opening mechanism for communicating the first space with an external space of the chuck through a second hole provided at a second position different from the first position of the chuck; a control unit that controls the supply mechanism and the release mechanism so that a period during which the holding of the substrate by the chuck is released includes a period during which the supply of the gas to the first space by the supply mechanism and the communication of the first space with the external space by the release mechanism are simultaneously performed; and the first holes are provided at a plurality of first positions on a first circumference that are a first distance from a center of the chuck; the second holes are provided at a plurality of second positions on a second circumference that are a second distance from the center of the chuck that is different from the first distance; The holding device, wherein the first distance is less than the second distance.

22. A substrate processing apparatus for processing a substrate, a holding device for holding the substrate; The retaining device comprises a retaining device according to any one of claims 1 to 21. A substrate processing apparatus comprising:

23. an illumination optical system that illuminates the original; a projection optical system that projects the pattern of the original onto the substrate; 23. The substrate processing apparatus of claim 22, further comprising:

24. forming a pattern on a substrate using the substrate processing apparatus according to claim 22; processing the substrate on which the pattern has been formed in the process; manufacturing an article from the processed substrate; A method for manufacturing an article, comprising:

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