Substrate holder, substrate transfer device, and method of manufacturing substrate holder

Abstract

To appropriately adjust the temperature of a substrate holder in a substrate transport device.SOLUTION: A substrate holder is provided in a device that transports a substrate and holds the substrate, and includes a main body and a heat pipe formed inside the main body. The heat pipe is formed by a flow path formed in the main body.SELECTED DRAWING: Figure 4

Description

[Technical Field]

[0001] The present disclosure relates to a substrate holder, a substrate transport apparatus, and a method for manufacturing a substrate holder. [Background technology]

[0002] Patent Document 1 discloses a transfer mechanism for transferring wafers into and out of a processing device that performs heat treatment on the wafers in a processing vessel. The transfer mechanism includes an arm unit having multiple arms that can bend, extend, and rotate, and a fork unit connected to the tip of the arm unit and that holds the wafer. The fork unit is made of ceramic material. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Application Laid-Open No. 2011-187910 Summary of the Invention [Problem to be solved by the invention]

[0004] The technology according to the present disclosure appropriately adjusts the temperature of a substrate holder in a substrate transport device. [Means for solving the problem]

[0005] One aspect of the present disclosure is a substrate holder that is provided in an apparatus for transporting a substrate and holds the substrate, the substrate holder comprising: Ceramic A heat pipe is formed inside the main body, and the heat pipe is formed by a flow path formed in the main body. The heat pipe has an inner surface exposed to the flow path, and no difference in thermal expansion occurs between the main body and the heat pipe. [Effects of the Invention]

[0006] According to the present disclosure, the temperature of a substrate holder in a substrate transport device can be appropriately adjusted. [Brief explanation of the drawings]

[0007] [Figure 1] FIG. 1 is a plan view showing an outline of the configuration of a wafer processing system. [Figure 2] FIG. 2 is a perspective view showing an outline of the configuration of a wafer transport device. [Figure 3] FIG. 2 is a cross-sectional view showing an outline of the internal configuration of the fork. [Figure 4] FIG. 2 is a longitudinal cross-sectional view showing an outline of the internal configuration of the fork. [Figure 5] 10A and 10B are explanatory diagrams showing a method for manufacturing a fork. [Figure 6] 10A to 10C are explanatory diagrams showing a method of forming a heat pipe in the method of manufacturing a fork. [Figure 7] 10A and 10B are diagrams illustrating a method for forming a heat pipe in another embodiment. [Figure 8] 10A and 10B are diagrams illustrating a method for forming a heat pipe in another embodiment. [Figure 9] 10A and 10B are diagrams illustrating a method for forming a heat pipe in another embodiment. DETAILED DESCRIPTION OF THE INVENTION

[0008] In the manufacturing process of semiconductor devices, semiconductor wafers (substrates; hereinafter referred to as "wafers") undergo various processes, such as film formation and etching, under reduced pressure (vacuum). For example, when multiple types of processes are performed in a single-wafer processing module, a so-called cluster-type wafer processing system is used, in which multiple processing modules are connected via gate valves around a transfer module equipped with a transport device inside. The transport device inside the transfer module is used to transport wafers to each processing module in sequence, and the desired processing is performed on the wafers sequentially.

[0009] When multiple processes are performed in a single wafer processing system, the process temperatures for each process may differ. For example, film formation is a high-temperature process, while etching is a low-temperature process. In addition, in the transfer mechanism (transfer device) disclosed in Patent Document 1, for example, the fork (fork) that supports the wafer is made of a ceramic material with heat resistance suitable for high-temperature processes so that the wafer can be supported after both high-temperature and low-temperature processes.

[0010] However, when performing processes at different processing temperatures, it is difficult for the transfer device to transfer the wafer at the appropriate temperature, which can lead to various adverse effects. For example, when a wafer is transferred into or out of a high-temperature processing module (high-temperature chamber), the temperature of the fork holding the wafer in the transfer device rises due to the temperature of the wafer itself and radiant heat from the processing module. If a wafer is transferred into or out of a low-temperature processing module (low-temperature chamber) under this condition, the wafer before low-temperature processing will be transferred into the low-temperature chamber in an overheated state, which could result in a deviation from the desired process rate. Furthermore, the temperature difference between the wafer before and after low-temperature processing could result in damage or cracking of the wafer.

[0011] Therefore, there is room for improvement in conventional conveying devices, and it is desirable to provide proper temperature control for the forks of the conveying device.

[0012] The technology disclosed herein appropriately adjusts the temperature of a substrate holder in a substrate transport device. Hereinafter, a wafer transport device as a substrate transport device, a fork as a substrate holder, and a method for manufacturing the fork according to this embodiment will be described with reference to the drawings. Note that in this specification and the drawings, elements having substantially the same functional configuration are designated by the same reference numerals, and redundant description will be omitted.

[0013] <Wafer processing system configuration> First, the configuration of a wafer processing system equipped with a wafer transport device according to this embodiment will be described. Fig. 1 is a plan view showing an outline of the configuration of the wafer processing system. In this embodiment, a case will be described in which the wafer processing system 1 is equipped with various processing modules for performing film formation processing and etching processing on a wafer W as a substrate. Note that the configuration of the wafer processing system 1 of the present disclosure is not limited to this and can be selected arbitrarily.

[0014] 1, wafer processing system 1 has a configuration in which normal pressure section 10 and reduced pressure section 11 are integrally connected via load lock modules 20a and 20b. In normal pressure section 10, a FOUP 31 (described below) capable of accommodating multiple wafers W is carried in and out under normal pressure (air atmosphere), and the wafers W are then transferred to load lock modules 20a and 20b. In reduced pressure section 11, desired processing is performed on wafers W under reduced pressure (vacuum atmosphere), and the wafers W are then transferred to load lock modules 20a and 20b.

[0015] The load lock module 20a temporarily holds the wafer W transferred from a loader module 30 (described later) in the normal pressure section 10 to transfer the wafer W to a transfer module 40 (described later) in the decompression section 11.

[0016] The load lock module 20a is connected to a loader module 30 (described later) via a gate valve 21a. The load lock module 20a is also connected to a transfer module 40 (described later) via a gate valve 22a. These gate valves 21a and 22a ensure airtightness between the load lock module 20a and the loader module 30 and transfer module 40, while also allowing communication between them.

[0017] The load lock module 20a is connected to an air supply section (not shown) that supplies gas and an exhaust section (not shown) that exhausts gas, and is configured so that the interior can be switched between a normal pressure atmosphere and a reduced pressure atmosphere by the air supply section and the exhaust section. That is, the load lock module 20a is configured so that the wafer W can be appropriately transferred between the normal pressure section 10, which has a normal pressure atmosphere, and the reduced pressure section 11, which has a reduced pressure atmosphere.

[0018] The load lock module 20b has the same configuration as the load lock module 20a, ie, the load lock module 20b has a gate valve 21b on the loader module 30 side and a gate valve 22b on the transfer module 40 side.

[0019] The number and arrangement of the load lock modules 20a and 20b are not limited to those in this embodiment, but can be set arbitrarily.

[0020] The atmospheric pressure section 10 has a loader module 30 equipped with a wafer transfer device (not shown) and a load port 32 on which a FOUP 31 capable of storing a plurality of wafers W is placed. The loader module 30 is also called an EFEM (Equipment Front End Module).

[0021] The loader module 30 has a rectangular housing, and the interior of the housing is maintained at normal pressure. A plurality of, for example, three load ports 32 are arranged side by side on one side that forms the long side of the housing of the loader module 30. Load lock modules 20a and 20b are arranged side by side on the other side that forms the long side of the housing of the loader module 30. The loader module 30 also has a wafer transfer device (not shown) that is movable in the longitudinal direction inside the housing. The wafer transfer device can transfer wafers W between the FOUP 31 placed on the load port 32 and the load lock modules 20a and 20b.

[0022] The number and arrangement of the load ports 32 are not limited to those in this embodiment and may be designed as desired. The atmospheric pressure section 10 may also be provided with a processing module that performs a desired process on the wafer W under atmospheric pressure, such as a module that performs a process to adjust the horizontal orientation of the wafer W.

[0023] The FOUP 31 accommodates a plurality of wafers W, for example, 25 wafers per lot, stacked in multiple stages at equal intervals. The interior of the FOUP 31 placed on the load port 32 is filled with, for example, air or nitrogen gas and sealed.

[0024] The decompression unit 11 includes a transfer module 40 that transports wafers W to various processing modules, a film formation module 41 as a processing device that performs a film formation process on the wafers W, and an etching module 42 as a processing device that performs an etching process on the wafers W. The interiors of the transfer module 40, the film formation module 41, and the etching module 42 are each maintained in a decompressed atmosphere. A plurality of film formation modules 41 and etching modules 42, for example, two each, are provided for the transfer module 40. The transfer module 40 is also referred to as a VTM (Vacuum Transfer Module).

[0025] The film forming module 41 and the etching module 42 are connected to the transfer module 40 via gate valves 43 and 44, respectively. These gate valves 43 and 44 ensure airtightness between the transfer module 40 and the film forming module 41 and the etching module 42, while also allowing communication between them.

[0026] The number and arrangement of processing modules provided in the transfer module 40, and the types of processing, are not limited to those in this embodiment, but can be set arbitrarily.

[0027] The transfer module 40 has an internal rectangular housing and is connected to the load lock modules 20a and 20b via the gate valves 22a and 22b as described above. The transfer module 40 sequentially transports the wafer W loaded into the load lock module 20a to one film forming module 41 and one etching module 42, where the wafer W is subjected to film forming and etching processes, and then the wafer W is transported to the normal pressure section 10 via the load lock module 20b.

[0028] A wafer transfer device 50 for transferring the wafer W is provided inside the transfer module 40. The detailed configuration of the wafer transfer device 50 will be described later.

[0029] The wafer processing system 1 described above is provided with a control unit 60. The control unit 60 is, for example, a computer equipped with a CPU, a memory, etc., and has a program storage unit (not shown). The program storage unit stores a program for controlling the processing of wafers W in the wafer processing system 1. The program may be recorded on a computer-readable storage medium H and installed into the control unit 60 from the storage medium H.

[0030] <Wafer processing in wafer processing systems> The wafer processing system 1 according to this embodiment is configured as described above. Next, wafer processing in the wafer processing system 1 will be described.

[0031] First, the FOUP 31 containing a plurality of wafers W is placed on the load port 32 .

[0032] Next, the wafer W is removed from the FOUP 31 by a wafer transfer device (not shown) and loaded into the load lock module 20a. Once the wafer W is loaded into the load lock module 20a, the gate valve 21a is closed, the inside of the load lock module 20a is sealed, and the pressure is reduced. Thereafter, the gate valve 22a is opened, and the inside of the load lock module 20a and the inside of the transfer module 40 are connected to each other.

[0033] Next, when the load lock module 20a and the transfer module 40 are connected to each other, the wafer W is taken out by the wafer transfer device 50 and carried from the load lock module 20a into the transfer module 40.

[0034] Next, the gate valve 43 is opened, and the wafer W is loaded into the film formation module 41 by the wafer transfer device 50. Subsequently, the gate valve 43 is closed, and a film formation process is performed on the wafer W. When the film formation process is completed, the gate valve 43 is opened, and the wafer W is loaded out of the film formation module 41 by the wafer transfer device 50. Then, the gate valve 43 is closed.

[0035] Next, the gate valve 44 is opened, and the wafer W is loaded into the etching module 42 by the wafer transfer device 50. Subsequently, the gate valve 44 is closed, and an etching process is performed on the wafer W. After the etching process is completed, the gate valve 44 is opened, and the wafer W is loaded out of the etching module 42 by the wafer transfer device 50. Then, the gate valve 44 is closed.

[0036] Next, the gate valve 22b is opened, and the wafer W is loaded into the load lock module 20b by the wafer transfer device 50. Once the wafer W has been loaded into the load lock module 20b, the gate valve 22b is closed, the inside of the load lock module 20b is sealed, and the load lock module 20b is opened to the atmosphere.

[0037] Next, the two wafers W are returned and accommodated in the FOUP 31 by a wafer transfer device (not shown). In this way, a series of wafer processing steps in the wafer processing system 1 is completed.

[0038] <Configuration of wafer transport device> Next, a description will be given of the configuration of the above-mentioned wafer transfer device 50. FIG.

[0039] 2, the wafer transfer device 50 is an articulated robot, and has a plurality of, for example, three arms 101, 102, and 103. The arms 101, 102, and 103 are supported by a transfer base 104.

[0040] The first arm 101 has a base end connected to the transfer base 104 and a tip end connected to the second arm 102. The second arm 102 has a base end connected to the first arm 101 and a tip end connected to the third arm 103. The third arm 103 has a base end connected to the second arm 102.

[0041] A first joint 111 is provided between the base end of the first arm 101 and the transfer base 104. A second joint 112 is provided between the base end of the second arm 102 and the tip of the first arm 101. A third joint 113 is provided between the base end of the third arm 103 and the tip of the second arm 102. A drive mechanism (not shown) is provided inside each of these joints 111, 112, and 113. This drive mechanism allows each of the arms 101, 102, and 103 to rotate (swivel) around the joints 111, 112, and 113, respectively.

[0042] A hollow space under normal pressure is formed inside each of the first arm 101 and the second arm 102. A temperature control mechanism (not shown) is housed in each hollow space to adjust the temperature of the first arm 101 and the second arm 102 to a desired temperature. Any known mechanism can be selected and used as the temperature control mechanism; for example, temperature control can be achieved by supplying dry air to the hollow space.

[0043] In addition to the temperature control mechanism, various other components are housed in each hollow portion. For example, cables (not shown) for transmitting power to the drive mechanisms of the joints 111, 112, and 113 are housed in each hollow portion.

[0044] The third arm 103 has a fork 120 (end effector) as a substrate holding unit, and a hand unit 121 that supports the fork 120. The fork 120 is provided on the tip side of the third arm 103 and holds the wafer W. The hand unit 121 is provided on the base end side of the third arm 103 and attached to the third joint 113.

[0045] In this embodiment, the fork 120 is configured to be able to move up and down vertically by the drive mechanism of the transport base 104, and is further configured to be able to move horizontally by the drive mechanisms of the joints 111, 112, and 113. That is, in this embodiment, the transport base 104 and the joints 111, 112, and 113 constitute the movement mechanism in the present disclosure.

[0046] <Fork configuration> Next, a description will be given of the configuration of the fork 120. Fig. 3 is a cross-sectional view showing an outline of the internal configuration of the fork 120. Fig. 4 is a vertical-sectional view showing an outline of the internal configuration of the fork 120.

[0047] As shown in FIGS. 3 and 4, the fork 120 has a main body 130 and a heat pipe 140 formed inside the main body 130.

[0048] 3, the main body 130 is bifurcated, with two branched portions 131 and a support portion 132 that supports the two branched portions 131 being integrally formed. The main body 130 is made of a ceramic material. The main body 130 is thin, with a thickness of, for example, 2 mm to 3 mm. A plurality of pads (not shown) are provided on the upper surface of the main body 130, and the fork 120 suction-holds the wafer W with these pads.

[0049] A plurality of heat pipes 140, for example, two heat pipes 140, are formed inside the main body 130. The two heat pipes 140 are formed inside each of the two branch portions 131, and are also formed inside the support portion 132. Each heat pipe 140 extends from the tip to the base end of the main body 130, that is, from the tip of the branch portion 131 to the base end of the support portion 132.

[0050] The width, number, and arrangement of the heat pipes 140 are not limited to those in this embodiment and can be set arbitrarily. However, if the heat pipes 140 are provided over the entire fork 120, the temperature of the entire fork 120 can be adjusted uniformly.

[0051] As shown in FIGS. 3 and 4, the heat pipe 140 has a flow path 141 for a working fluid, a wick 142 (capillary structure), and a sealing member 143 that seals the open end of the flow path 141.

[0052] The flow channel 141 is formed hollow inside the main body 130. The flow channel 141 extends from the tip of the branching portion 131 to the base end of the support portion 132 as described above.

[0053] The wick 142 is formed inside the flow path 141 (inside when viewed from the side) and extends from the tip of the branching portion 131 to the base end of the support portion 132, similar to the flow path 141. The wick 142 is made of the same type of ceramic material as the main body portion 130. In this embodiment, the porosity of the wick 142 is higher than the porosity of the main body portion 130, which allows the wick 142 to function as a capillary structure. However, if the porosity of the main body portion 130 is sufficiently high, the porosity of the wick 142 may be the same as the porosity of the main body portion 130.

[0054] The sealing member 143 is provided at both the distal open end and the proximal open end of the flow channel 141. There are no particular limitations on the sealing member 143 as long as it seals the working fluid inside the flow channel 141, and for example, a ceramic part is used.

[0055] As described above, in the wafer processing system 1 of this embodiment, a film is formed on a wafer W in the film forming module 41, and then the wafer W is etched in the etching module 42. In this case, when the wafer W is transferred into or out of the film forming module 41, which performs a high-temperature film forming process, the temperature of the fork 120 rises. If the wafer W is transferred into or out of the etching module 42, which performs a low-temperature etching process, in this state, the wafer W before the etching process is transferred into the etching module 42 in an excessively heated state, which may cause the etching rate to deviate from the desired rate. Furthermore, a temperature difference occurs between the wafer W before the etching process and the wafer W after the etching process, which may cause damage or cracks to the wafer W.

[0056] In this regard, in this embodiment, the first arm 101 and the second arm 102 are provided with temperature adjustment mechanisms, which adjust the temperatures of the first arm 101 and the second arm 102 and also adjust the temperature of the hand unit 121. A heat pipe 140 is formed inside the fork 120, allowing the fork 120 to exchange heat with the hand unit 121 via the heat pipe 140. In this case, the fork 120 can be heated or cooled. The temperature of the fork 120 can be brought closer to the temperature of the hand unit 121, allowing the fork 120 to be controlled and adjusted to a desired temperature. In particular, because the heat pipe 140 has high heat transfer performance, adjusting the base end to a desired temperature allows the tip to also be adjusted to a desired temperature. Furthermore, in this case, it is possible to control and adjust the entire fork 120 to a desired temperature without the need for an external coolant circulation unit or the like.

[0057] Furthermore, because the heat pipe 140 extends from the tip of the main body 130 to the base end of the support 132, heat from the temperature adjustment mechanism is easily conducted to the base end of the heat pipe 140, and heat exchange between the fork 120 and the hand 121 can be more efficiently carried out. This allows the temperature of the fork 120 to be brought even closer to the temperature of the hand 121, and the temperature of the fork 120 can be adjusted more appropriately.

[0058] Since the temperature of the fork 120 can be adjusted in this manner, even when multiple processes at different processing temperatures are performed in one wafer processing system 1, the temperature of the fork 120 can be adjusted to appropriately adjust the temperature of the wafer W held by the fork 120. As a result, each process can be appropriately performed on the wafer W. In addition, damage to the wafer W caused by temperature differences in the wafer W can also be suppressed.

[0059] Furthermore, in this embodiment, the first arm 101 and the second arm 102 are provided with temperature adjustment mechanisms, but the hand unit 121 may also be provided with a temperature adjustment mechanism. In either case, by locating the base end of the heat pipe 140 close to the temperature adjustment mechanism, i.e., the heat source, the fork 120 can be adjusted to an appropriate temperature. It has been proposed to provide a temperature adjustment mechanism, such as a heat sink, only in the hand unit. However, the temperature adjustment effect of the fork is limited when only the hand unit is provided. By providing the heat pipe 140 inside the main body unit 130 as in this embodiment, the temperature of the fork 120 can be appropriately adjusted.

[0060] Furthermore, because the main body 130 of the fork 120 is made of ceramic material, it can withstand low-temperature treatment as well as high-temperature treatment, allowing the fork 120 to be used in a wide temperature range. Furthermore, ceramic material generates little dust, which can also prevent contamination of the surrounding area by particles, etc.

[0061] <Fork manufacturing method> Next, a description will be given of a method for manufacturing the fork 120. Figure 5 is an explanatory diagram showing a method for manufacturing the fork 120. Figure 6 is an explanatory diagram showing a method for forming the heat pipe 140 in the method for manufacturing the fork 120.

[0062] [Process S1: Body forming process] First, in step S1, a ceramic body 220 is formed in which a support material 210 is provided inside a ceramic material 200. While any method for forming the ceramic body 220 may be used, in this embodiment, for example, ceramic 3D printing technology is used to form the ceramic body 220 by stacking the ceramic material 200 and the support material 210.

[0063] A fluid slurry in which ceramic powder is dispersed in a liquid medium is used for the ceramic material 200. The ceramic material 200 also includes a ceramic material for the main body 201 that functions as the main body 130 and a ceramic material for the wick 202 that functions as the wick 142. Any material can be used for the support material 210, but the material that will be removed in step S4, which will be described later, is used.

[0064] A known processing device is used to form the ceramic body 220. For example, the processing device includes an inkjet head capable of ejecting the ceramic material 200 and the support material 210. The ceramic material 200 and the support material 210 are then stacked one layer at a time to form a three-dimensional structure.

[0065] In step S1, first, ceramic materials 201 for the main body are laminated as shown in FIG. 5(a).

[0066] 5(b), a ceramic material 201 for the main body, a ceramic material 202 for the wick, and a support material 210 are further laminated. The support material 210 is removed in step S4, which will be described later, to form a flow path 141 of the heat pipe 140. For this reason, the support material 210 is formed at a position where the flow path 141 is to be formed, on the inner side of the ceramic material 201 for the main body as viewed from the side.

[0067] The wick ceramic material 202 functions as the wick 142 and is therefore formed on the inner side of the support material 210 in a side view. The wick ceramic material 202 has a higher porosity than the main body ceramic material 201. For example, the porosity of each ceramic material 201, 202 can be adjusted by adjusting the blend ratio of the slurries used for the main body ceramic material 201 and the wick ceramic material 202. Since the porosity of the wick ceramic material 202 is higher than that of the main body ceramic material 201, the wick 142 can fulfill the role of a capillary structure. However, as described above, if the porosity of the main body ceramic material 201 is sufficiently high, the porosity of the wick ceramic material 202 may be the same as that of the main body ceramic material 201.

[0068] Next, as shown in Figures 5(c) and 6(a), the main body ceramic material 201 is further laminated, thereby forming the ceramic element 220. That is, the ceramic element 220 has a configuration in which the support material 210 and the wick ceramic material 202 are provided inside the main body ceramic material 201.

[0069] Here, the thickness of fork 120 (main body 130) is thin, for example, 2 mm to 3 mm. It is difficult to cut the inside of such a thin ceramic plate after firing to form a microstructure, and using conventional methods, it has been difficult to form a heat pipe for temperature regulation inside the fork. In other words, if you try to form a heat pipe inside the fork, the thickness of the fork will increase.

[0070] In this regard, in the present embodiment, in step S1, a microstructure of the support material 210 and the wick ceramic material 202 can be formed inside the main body ceramic material 201. That is, a microstructure for configuring the heat pipe 140 can be formed inside the main body 130 of the fork 120 while maintaining the thickness of the main body 130 thin.

[0071] It is also possible to embed metal heat pipes or refrigerant piping in the thin ceramic plate, but compared to this case, when a microstructure is formed in the main body 130 made of ceramic material as in this embodiment, it is possible to suppress a decrease in the mechanical strength of the ceramic material. Furthermore, when metal heat pipes or refrigerant piping are embedded in the thin ceramic plate, there is a risk of cracks or dust generation due to the difference in thermal expansion between the ceramic and metal, and there is also a decrease in temperature controllability due to thermal resistance at the joint, but this embodiment can suppress the occurrence of such problems.

[0072] The method for forming the ceramic body 220 in step S1 is not limited to the above embodiment. For example, the ceramic body 220 may be formed by firing a polymer that has been polymerized while forming a three-dimensional shape in a liquid. Alternatively, the ceramic body 220 may be formed by inkjet printing a ceramic slurry.

[0073] [Process S2: Firing process] Next, in step S2, ceramic body 220 is fired under humidity and firing conditions that correspond to the slurry of ceramic material 201. A known heating device is used to fire ceramic body 220.

[0074] [Process S3: External finishing process] Next, in step S3, the outer shape of the ceramic body 220 is cut and the surface is polished for finish processing. A known grinding device is used for this outer shape finish processing of the ceramic body 220. In this way, the ceramic body 220 is formed.

[0075] [Process S4: Main body forming process (channel forming process)] Next, in step S4, the main body 130 is formed. As shown in FIGS. 5(d) and 6(b), the support material 210 is removed from the ceramic body 220. Any method for removing the support material 210 can be selected. For example, if the support material 210 is a resin, the support material 210 is removed by heating and sublimating the support material 210 in a reduced pressure atmosphere. Alternatively, the support material 210 may be dissolved by supplying an acidic gas. Then, a flow path 141 is formed inside the main body ceramic material 201, and the main body 130 is formed.

[0076] [Step S5: Working fluid sealing step] Next, in step S5, the working fluid is supplied and sealed inside the flow channel 141. The method for supplying the working fluid can be selected arbitrarily.

[0077] [Process S6: Sealing process] Next, in step S6, a sealing member 143 is provided at the open end of the flow path 141 to seal the flow path 141. For example, the sealing member 143, which is a ceramic part, is attached to the open end by brazing or the like. In this way, the heat pipe 140 is formed inside the main body 130, and the fork 120 is manufactured.

[0078] According to this embodiment, even if the main body 130 of the fork 120 is made of a thin ceramic material, the heat pipe 140 can be formed inside the main body 130.

[0079] Here, there is a conventional technology, such as that disclosed in Japanese Patent No. 4057158, in which a heat pipe is installed inside a metal fork (transport arm) as a cooling channel filled with a refrigerant. With this technology, since the fork is made of metal, it is easy to process, and there is no difference in thermal expansion between the fork and the heat pipe. Therefore, even if the fork is thin, a heat pipe can be installed inside it.

[0080] However, metal forks have limited usable temperature ranges. In this regard, in this embodiment, a ceramic material is used for the body 130 of the fork 120, which can withstand low-temperature treatment as well as high-temperature treatment, allowing the fork 120 to be used over a wide temperature range. Note that the fork disclosed in Japanese Patent No. 4057158 is intended to be used under normal pressure, and is not intended to be used under a wide temperature range under reduced pressure, as in this embodiment.

[0081] On the other hand, when a thin ceramic material is used for the main body 130 as in this embodiment, as described above, it is difficult to form a microstructure by cutting the inside of the ceramic thin plate after firing using conventional methods, making it difficult to form a heat pipe consisting of such a microstructure. Furthermore, when a metal heat pipe is embedded in a ceramic thin plate, the difference in thermal expansion between the ceramic and the metal can cause cracks and dust generation. In this regard, in this embodiment, even if the main body 130 of the fork 120 is made of a thin ceramic material, by performing the above steps S1 to S6, a microstructure can be formed inside the main body 130 to form the heat pipe 140.

[0082] <Other embodiments> Here, the inner surface of flow path 141 in heat pipe 140 is made of ceramic material, which is main body 130, and since ceramic material is porous, there is a risk that the enclosed working fluid will permeate outside of flow path 141, i.e., into main body 130. For example, if main body 130 has a high porosity, there is a risk that the working fluid will permeate into main body 130, causing a decrease in the function of heat pipe 140. Therefore, the following three countermeasures can be proposed.

[0083] [Measure 1] The first measure to suppress leakage of the working fluid is to reduce the porosity of the outer wall of the flow path 141. Figure 7 is an explanatory diagram showing a method of forming the heat pipe 140 in measure 1.

[0084] 7(a), when the ceramic body 220 is formed in step S1, an inner body ceramic material 201a and an outer body ceramic material 201b are laminated to form the main body ceramic material 201. The inner body ceramic material 201a is laminated around the wick ceramic material 202 and the support material 210, and functions as the outer wall of the flow path 141. The outer body ceramic material 201b is laminated around the inner body ceramic material 201a.

[0085] The porosity of the inner body ceramic material 201a is lower than that of the outer body ceramic material 201b. For example, by adjusting the composition of the slurries used for the inner body ceramic material 201a and the outer body ceramic material 201b, the porosity of each of the body ceramic materials 201a and 201b can be adjusted.

[0086] Thereafter, ceramic body 220 is fired in step S2, and the outer shape of ceramic body 220 is finished in step S3. Then, support material 210 is removed in step S4 as shown in Fig. 7(b). As a result, flow path 141 is formed inside main body ceramic material 201, and main body 130 is formed. Main body 130 includes inner main body 130a that forms the outer wall of flow path 141, and outer main body 130b that is located outside inner main body 130a.

[0087] In this case, since the porosity of the inner main body portion 130a is lower than the porosity of the outer main body portion 130b, leakage of the working fluid from the flow path 141 in the heat pipe 140 can be suppressed.

[0088] [Measure 2] A second measure to suppress leakage of the working fluid is to use a material other than ceramic material for the outer wall of the flow path 141. Figure 8 is an explanatory diagram showing a method of forming the heat pipe 140 in measure 2.

[0089] 8(a), when the ceramic body 220 is formed, an outer wall material 250 is laminated around the wick ceramic material 202 and the support material 210, and then a main body ceramic material 201 is laminated around the outer wall material 250. The outer wall material 250 is made of a material with a lower porosity than the main body ceramic material 201, such as quartz, and functions as the outer wall of the flow path 141.

[0090] Thereafter, the ceramic body 220 is fired in step S2, and the outer shape of the ceramic body 220 is finished in step S3. Then, the support material 210 is removed in step S4 as shown in Fig. 8(b). As a result, a flow path 141 having an outer wall portion 251 (outer wall material 250) is formed inside the main body ceramic material 201, and the main body 130 is formed.

[0091] In this case, since the porosity of the outer wall portion 251 is low, leakage of the working fluid from the flow path 141 in the heat pipe 140 can be suppressed.

[0092] [Measure 3] A third measure to suppress leakage of the working fluid is to form a metal film on the inner surface of the flow path 141. Figure 9 is an explanatory diagram showing a method of forming the heat pipe 140 in measure 3.

[0093] Steps S1 to S3 are performed in sequence to form a ceramic body 220 as shown in Fig. 9(a). Then, in step S4, the support material 210 is removed as shown in Fig. 9(b), and a metal film 260 is formed on the inner surface of the flow channel 141. The metal film 260 can be formed by any method, but for example, the metal film 260 is formed by vapor-depositing a metal material on the inner surface of the flow channel 141.

[0094] In this case, the metal film 260 can prevent the working fluid from leaking from the flow path 141 in the heat pipe 140.

[0095] <Other embodiments> In the above embodiment, the case where the temperature of the fork 120 is adjusted when a high-temperature film formation process and a low-temperature etching process are performed sequentially in the wafer processing system 1 has been described. However, the fork 120 can also be adjusted to an appropriate temperature when low-temperature processing and high-temperature processing are performed sequentially.

[0096] The fork 120 can also be applied to a wafer transport device in a wafer processing system that performs a single process. Even in a single process, the temperature at the start and end of the process is different, so there are similar issues to those when performing multiple processes. In this regard, in this embodiment, the temperature of the fork 120 can be adjusted to appropriately adjust the temperature of the wafer W, so that the single process can be performed stably.

[0097] Furthermore, in the above embodiment, the fork 120 is used in the wafer transfer device 50 used in a reduced pressure atmosphere, but it may also be applied to a wafer transfer device used in a normal pressure atmosphere.

[0098] In the fork 120 of the above embodiment, the heat pipe 140 formed inside the main body 130 is a closed type that seals the working fluid, but the type of heat pipe 140 is not limited to this. For example, the heat pipe 140 may be a type that circulates the working fluid with the outside.

[0099] The embodiments disclosed herein should be considered to be illustrative in all respects and not restrictive, and the above-described embodiments may be omitted, substituted, or modified in various ways without departing from the scope and spirit of the appended claims. [Explanation of symbols]

[0100] 50 Wafer transport device 104 Transport base 111 First joint 112 Second joint 113 Third joint 120 fork 130 Main body 140 Heat Pipe 141 Channel W wafer

Claims

1. A substrate holder provided in a device for transporting a substrate and for holding the substrate, A ceramic body; a heat pipe formed inside the main body, the heat pipe is formed by a flow path formed in the main body, the heat pipe has an inner surface exposed to the flow path; A substrate holder in which no difference in thermal expansion occurs between the main body and the heat pipe.

2. The substrate support of claim 1 , wherein the heat pipe comprises a ceramic wick formed within the flow passage.

3. The substrate holder of claim 2 , wherein the wick has a higher porosity than the main body portion.

4. 4. The substrate holder according to claim 1, wherein the heat pipe includes a sealing member provided at an open end of the flow path.

5. 5. The substrate holder according to claim 1, wherein the heat pipe extends from the tip to the base end of the main body.

6. A substrate holder provided in a device for transporting a substrate and for holding the substrate, A ceramic body; a heat pipe having a flow path for a working fluid formed in one layer in the main body portion, the heat pipe has an inner surface exposed to the flow path; A substrate holder in which no difference in thermal expansion occurs between the main body and the heat pipe.

7. A substrate transfer device that transfers substrates to a plurality of processing devices under a reduced pressure atmosphere, a substrate holder for holding a substrate; a moving mechanism for moving the substrate holder at least in a horizontal direction, The substrate holder is A ceramic body; a heat pipe formed inside the main body, the heat pipe is formed by a flow path formed in the main body, the heat pipe has an inner surface exposed to the flow path; A substrate transfer device in which no difference in thermal expansion occurs between the main body and the heat pipe.

8. A substrate transport device as described in Claim 7, wherein the arm is provided with a temperature control mechanism.

9. the heat pipe extends from the tip end to the base end of the main body, The substrate transfer device according to claim 8 , wherein heat from the temperature adjustment mechanism is conducted to a base end of the heat pipe.

10. A method for manufacturing a substrate holder that is provided in a device for transporting substrates and holds the substrates, comprising: (a) forming a ceramic body having a laminated structure; (b) forming a flow path for a working fluid in one layer of the main body portion to form a heat pipe having the flow path.

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