reactor

Abstract

To suppress leakage of a raw material gas.SOLUTION: A reactor 100 comprises an inner cylinder 11 including a first flow passage 20 through which a raw material gas g1 flows, and a substrate area 30 for arranging a substrate; an intermediate cylinder 12 including a second flow passage 21 between the inner cylinder 11 and the intermediate cylinder 12 according to the intermediate cylinder 12 surrounding the inner cylinder 11; and an outer cylinder 13 including a third flow passage 22 through which inert gas g3 flows between the intermediate cylinder 12 and the outer cylinder 13 according to the outer cylinder 13 surrounding the intermediate cylinder 12.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] The present disclosure relates to a reactor. [Background technology]

[0002] BACKGROUND ART Conventionally, reactors for forming materials such as SiC are known (see, for example, Patent Documents 1 and 2). [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Application Laid-Open No. 2012-250183 [Patent Document 2] Japanese Patent Application Publication No. 9-260364 Summary of the Invention [Problem to be solved by the invention]

[0004] In the reactor described above, for example, a corrosive source gas may be used in some cases, and if such a source gas leaks outside the reactor, metal parts such as the furnace body of the reactor may be corroded by the source gas.

[0005] In consideration of the above-mentioned problems, the present disclosure has an object to provide a reactor capable of suppressing leakage of raw material gas. [Means for solving the problem]

[0006] A reactor according to one embodiment of the present disclosure includes an inner cylinder including a first flow path through which a raw material gas flows and a substrate area for placing a substrate; a middle cylinder surrounding the inner cylinder, the middle cylinder including a second flow path between the middle cylinder and the inner cylinder; and an outer cylinder surrounding the middle cylinder, the outer cylinder including a third flow path through which an inert gas flows between the outer cylinder and the middle cylinder. The inner cylinder is connected to a first outlet pipe for discharging a gas containing a raw material gas, and the outer cylinder is connected to a second outlet pipe for discharging an inert gas separate from the first outlet pipe. .

[0007] The source gas may include a first source gas flowing through a first flow path and a second source gas flowing through a second flow path, and the inner cylinder may include a plurality of openings arranged along the first flow path and connecting the second flow path to the first flow path.

[0008] The cross-sectional area of ​​the plurality of openings may vary along the first flow path.

[0009] A second inert gas may flow through the second flow path, and the inner vessel may include an opening downstream of the substrate area in the flow of the feed gas and connecting the second flow path to the first flow path.

[0010] The reactor may include a first pressure regulating means for regulating a first pressure in the first flow path, a second pressure regulating means for regulating a second pressure in the second flow path, a third pressure regulating means for regulating a third pressure in the third flow path, and a control device communicatively connected to the first, second, and third pressure regulating means, and the control device may control the first, second, and third pressure regulating means so that the second pressure is higher than the first pressure and the third pressure is higher than the second pressure.

[0011] Each of the first, second and third pressure regulating means may include at least one of a valve or a pump. [Effects of the Invention]

[0012] According to the present disclosure, leakage of source gas can be suppressed. [Brief explanation of the drawings]

[0013] [Figure 1] FIG. 1 is a schematic diagram showing a reactor according to the first embodiment. [Figure 2] FIG. 2 is a schematic diagram showing a reactor according to the second embodiment. [Figure 3] FIG. 3 is a schematic diagram showing a reactor according to a third embodiment. [Figure 4] FIG. 4 is a schematic diagram showing a reactor according to a fourth embodiment. [Figure 5]FIG. 5 is a schematic diagram showing a reactor according to a fifth embodiment. DETAILED DESCRIPTION OF THE INVENTION

[0014] Hereinafter, embodiments of the present disclosure will be described in detail with reference to the accompanying drawings. Specific dimensions, materials, numerical values, etc. shown in the embodiments are merely examples for ease of understanding and do not limit the present disclosure unless otherwise specified. In this specification and drawings, elements having substantially the same functions and configurations are designated by the same reference numerals to avoid redundant explanation, and elements not directly related to the present disclosure are not shown.

[0015] FIG. 1 is a schematic diagram showing a reactor 100 according to a first embodiment. The reactor 100 is used to form materials such as composite materials or semiconductors. For example, the reactor 100 uses a chemical vapor deposition (CVD) or chemical vapor infiltration (CVI) method. For example, the reactor 100 may be used to form silicon carbide (SiC) as a composite material. For example, the reactor 100 may be used to manufacture ceramic matrix composites (CMCs) containing SiC.

[0016] The reactor 100 includes a furnace body 10 and a control device 50. The furnace body 10 also includes an inner cylinder 11, a middle cylinder 12, and an outer cylinder 13. For example, the inner cylinder 11, the middle cylinder 12, and the outer cylinder 13 have a generally cylindrical shape. In other embodiments, the inner cylinder 11, the middle cylinder 12, and the outer cylinder 13 may have a hollow shape other than a cylinder.

[0017] The inner cylinder 11 includes a first flow path 20 therein. The first flow path 20 functions as a reaction chamber. The first flow path 20 includes a substrate area 30. In FIG. 1, the substrate area 30 is hatched. A substrate used in the production of a material is arranged in the substrate area 30. For example, when producing a CMC, a porous body obtained by molding fibers may be used as the substrate. For example, a plurality of substrates may be arranged in the substrate area 30 along the first flow path 20.

[0018] In this embodiment, the inner cylinder 11 includes a plurality of openings 11h along the first flow path 20, i.e., along the flow of a first source gas g1 described later. The inner cylinder 11 may also include a plurality of openings 11h in the circumferential direction of the inner cylinder 11. The plurality of openings 11h are arranged along the substrate area 30. The openings 11h penetrate from the outer surface to the inner surface of the inner cylinder 11. The openings 11h connect the first flow path 20 and a second flow path 21 described later. In this embodiment, the cross-sectional areas of the plurality of openings 11h are the same or approximately the same as each other.

[0019] The inner cylinder 11 is made of, for example, a material containing carbon, and is connected to an inlet pipe 11a and an outlet pipe 11b.

[0020] For example, the inlet pipe 11a is connected to one end of the inner cylinder 11. For example, the inlet pipe 11a may pass inside the inlet pipe 12a of the middle cylinder 12 (described later). In other embodiments, the inlet pipe 11a may pass outside the inlet pipe 12a. In this embodiment, a first source gas g1 is supplied to the inlet pipe 11a from a supply source (not shown). In this embodiment, the first source gas g1 contains Si. For example, the first source gas g1 contains methyltrichlorosilane, dimethyldichlorosilane, trimethylchlorosilane, silicon tetrachloride, or silane. These gases may have properties such as corrosiveness. The inlet pipe 11a supplies the first source gas g1 to the first flow path 20.

[0021] A valve V1 is provided in the inlet pipe 11a. The valve V1 is communicably connected to a control device 50 via wire or wirelessly and is controlled by the control device 50. The control device 50 adjusts the opening of the valve V1 to control the flow rate of the first source gas g1 passing through the inlet pipe 11a.

[0022] A pressure sensor S1 is provided in the inlet pipe 11a. The pressure sensor S1 measures the pressure in the inlet pipe 11a, i.e., the pressure in the first flow path 20. The pressure sensor S1 is communicably connected to the control device 50 via a wire or wirelessly, and transmits measurement data to the control device 50. The pressure sensor S1 may be provided in another location as long as the pressure sensor S1 can measure the pressure in the first flow path 20. Alternatively or additionally, a flow meter (not shown) may be provided in the inlet pipe 11a, and the control device 50 may control the opening of the valve V1 so that the flow rate of the first source gas g1 measured by the flow meter is adjusted to a predetermined flow rate.

[0023] For example, the outlet pipe 11b is connected to the end of the inner cylinder 11 opposite to the inlet pipe 11a. The outlet pipe 11b discharges a reaction gas g4, which will be described later, from the reaction chamber 20.

[0024] A valve V2 is provided in the outlet pipe 11b. The valve V2 is communicably connected to the control device 50 via wire or wirelessly and is controlled by the control device 50. The control device 50 adjusts the opening of the valve V2 to control the flow rate of the reaction gas g4 passing through the outlet pipe 11b.

[0025] A pump P1 is provided in the outlet pipe 11b. The pump P1 is communicably connected to the control device 50 via a wire or wirelessly and is controlled by the control device 50. The control device 50 controls the output of the pump P1 and the flow rate of the reaction gas g4 drawn from the reaction chamber 20. A flow meter (not shown) may be provided in the outlet pipe 11b, and the control device 50 may control the opening of the valve V2 and the output of the pump P1 so that the flow rate of the reaction gas g4 measured by the flow meter is adjusted to a predetermined flow rate.

[0026] In this embodiment, the pressure in the first flow path 20 (first pressure) is controlled by a first pressure adjusting means including valves V1 and V2 and a pump P1. The control device 50 controls the valves V1 and V2 and the pump P1 so that the pressure measured by the pressure sensor S1 is adjusted to a predetermined negative pressure. Note that the first pressure adjusting means may further include additional elements, such as an additional valve or pump. Also, for example, the valve V2 may not be provided.

[0027] The center cylinder 12 surrounds the inner cylinder 11. For example, the center cylinder 12 is arranged concentrically with the inner cylinder 11. The center cylinder 12 includes a second flow path 21 between the center cylinder 12 and the inner cylinder 11. The center cylinder 12 is formed of, for example, a material containing carbon. The center cylinder 12 is connected to an inlet pipe 12a.

[0028] For example, the inlet pipe 12a is connected to one end of the middle cylinder 12. For example, the inlet pipe 12a surrounds a portion of the inlet pipe 11a of the inner cylinder 11. In this embodiment, a second source gas g2 is supplied to the inlet pipe 12a from a supply source (not shown). In this embodiment, the second source gas g2 contains C. For example, the second source gas g2 contains a hydrocarbon. The inlet pipe 12a supplies the second source gas g2 to the second flow path 21. The second source gas g2 flows from the second flow path 21 into the first flow path 20 through the opening 11h.

[0029] A valve V3 is provided in the inlet pipe 12a. The valve V3 is communicably connected to the control device 50 via wire or wirelessly and is controlled by the control device 50. The control device 50 adjusts the opening of the valve V3 to control the flow rate of the second source gas g2 passing through the inlet pipe 12a.

[0030] A pressure sensor S2 is provided in the inlet pipe 12a. The pressure sensor S2 measures the pressure in the inlet pipe 12a, i.e., the pressure in the second flow path 21. The pressure sensor S2 is communicably connected to the control device 50 via a wire or wirelessly, and transmits measurement data to the control device 50. The pressure sensor S2 may be provided in another location as long as the pressure sensor S2 can measure the pressure in the second flow path 21. Alternatively or additionally, a flow meter (not shown) may be provided in the inlet pipe 12a, and the control device 50 may control the opening of the valve V3 so that the flow rate of the second source gas g2 measured by the flow meter is adjusted to a predetermined flow rate.

[0031] In this embodiment, the pressure in the second flow path 21 (second pressure) is controlled by a second pressure adjustment means including the valve V3 and the above-mentioned valve V2 and pump P1. The control device 50 controls the valves V3, V2 and pump P1 so that the pressure measured by the pressure sensor S2 is adjusted to a predetermined negative pressure. Note that the second pressure adjustment means may further include additional elements such as other valves or pumps.

[0032] The outer cylinder 13 surrounds the inner cylinder 12. For example, the outer cylinder 13 is arranged concentrically with the inner cylinder 11 and the inner cylinder 12. The outer cylinder 13 includes a third flow path 22 between the outer cylinder 13 and the inner cylinder 12. The outer cylinder 13 is formed of, for example, a material including metal. The outer cylinder 13 is connected to an inlet pipe 13a and an outlet pipe 13b.

[0033] For example, the inlet pipe 13a is connected to one end of the outer cylinder 13. In this embodiment, an inert gas (first inert gas) g3 is supplied to the inlet pipe 13a from a supply source (not shown). For example, the inert gas g3 includes nitrogen, argon, or helium. The inlet pipe 13a supplies the inert gas g3 into the third flow path 22.

[0034] A valve V4 is provided in the inlet pipe 13a. The valve V4 is connected to the control device 50 via wire or wireless communication and is controlled by the control device 50. The control device 50 adjusts the opening of the valve V4 to control the flow rate of the inert gas g3 passing through the inlet pipe 13a.

[0035] A pressure sensor S3 is provided in the inlet pipe 13a. The pressure sensor S3 measures the pressure in the inlet pipe 13a, i.e., the pressure in the third flow path 22. The pressure sensor S3 is communicably connected to the control device 50 via a wire or wirelessly, and transmits measurement data to the control device 50. The pressure sensor S3 may be provided in a different location as long as the pressure sensor S3 can measure the pressure in the third flow path 22. Alternatively or additionally, a flow meter (not shown) may be provided in the inlet pipe 13a, and the control device 50 may control the opening of the valve V4 so that the flow rate of the inert gas g3 passing through the inlet pipe 13a is adjusted to a predetermined flow rate.

[0036] For example, the outlet pipe 13b is connected to the end of the outer cylinder 13 opposite to the inlet pipe 13a. The outlet pipe 13b discharges the inert gas g3 from the third flow path 22.

[0037] A valve V5 is provided in the outlet pipe 13b. The valve V5 is connected to the control device 50 via wire or wireless communication and is controlled by the control device 50. The control device 50 adjusts the opening of the valve V5 to control the flow rate of the inert gas g3 passing through the outlet pipe 13b.

[0038] A pump P2 is provided in the outlet pipe 13b. The pump P2 is communicably connected to the control device 50 via a wire or wirelessly, and is controlled by the control device 50. The control device 50 controls the output of the pump P2, thereby controlling the flow rate of the inert gas g3 drawn from the third flow path 22.

[0039] In this embodiment, the pressure in the third flow path 22 (third pressure) is controlled by a third pressure adjustment means including valves V4 and V5 and a pump P2. The control device 50 controls the valves V4 and V5 and the pump P2 so that the pressure measured by the pressure sensor S3 is adjusted to a predetermined negative pressure. Note that the third pressure adjustment means may further include additional elements, such as an additional valve or pump. Also, for example, the valve V5 may not be provided.

[0040] A heater 40 is provided on the outer cylinder 13. The heater 40 is communicably connected to a control device 50 via wire or wirelessly, and is controlled by the control device 50. The control device 50 controls the output of the heater 40 and adjusts the temperature of the substrate area 30 to a predetermined temperature.

[0041] The control device 50 controls all or part of the reactor 100. The control device 50 includes components such as a processor 50a, a storage device 50b, and a connector 50c, which are connected to each other via a bus. For example, the processor 50a includes a CPU (Central Processing Unit). For example, the storage device 50b includes a hard disk, a ROM for storing programs, and a RAM as a work area. The control device 50 communicates with each component of the reactor 100 via the connector 50c. For example, the control device 50 may further include other components, such as a display device such as a liquid crystal display or a touch panel, and an input device such as a keyboard, buttons, or a touch panel. For example, the operation of the control device 50 described below may be realized by the processor 50a executing a program stored in the storage device 50b.

[0042] Next, the production of a composite material using the reactor 100 will be described.

[0043] A plurality of substrates are arranged in the substrate area 30. The temperature of the substrate area 30 is adjusted to a predetermined temperature by a heater 40. A first source gas g1 is supplied to the first flow path 20 via an inlet pipe 11a. A second source gas g2 is supplied to the second flow path 21 via an inlet pipe 12a. The second source gas g2 flows from the second flow path 21 into the first flow path 20 via a plurality of openings 11h.

[0044] The first source gas g1 and the second source gas g2 are mixed in the first flow path 20 to generate a reaction gas g4. A portion of the reaction gas g4 deposits on or permeates the substrates arranged in the substrate area 30, thereby forming SiC on or within the substrates. The remainder of the reaction gas g4 is discharged from the first flow path 20 via the outlet pipe 11b.

[0045] During the above reaction, an inert gas g3 is supplied through the inlet pipe 13a to the third flow path 22. The inert gas g3 is discharged from the third flow path 22 through the outlet pipe 13b.

[0046] During the above operation, the control device 50 controls the valves V1, V2, V3 and the pump P1 so that the second pressure in the second flow path 21 is higher than the first pressure in the first flow path 20. The control device 50 also controls the valves V4, V5 and the pump P2 so that the third pressure in the third flow path 22 is higher than the second pressure in the second flow path 21. In other words, the control device 50 controls the first, second and third pressure adjusting means so that the pressure in the outer flow path is higher than the pressure in the inner flow path.

[0047] The reactor 100 described above includes an inner cylinder 11 including a first flow path 20 through which a first source gas g1 flows and a substrate area 30 for placing a substrate; a middle cylinder 12 surrounding the inner cylinder 11, the middle cylinder 12 including a second flow path 21 between the middle cylinder 12 and the inner cylinder 11; and an outer cylinder 13 surrounding the middle cylinder 12, the outer cylinder 13 including a third flow path 22 through which an inert gas g3 flows between the outer cylinder 13 and the middle cylinder 12. With this configuration, the flow of the first source gas g1 is surrounded by the inner cylinder 11, the middle cylinder 12, and the outer cylinder 13. Furthermore, the flow of the first source gas g1 is surrounded by the inert gas g3. Therefore, leakage of the first source gas g1, which has properties such as corrosiveness, can be suppressed.

[0048] In the reactor 100, the source gas includes a first source gas g1 flowing through the first flow path 20 and a second source gas g2 flowing through the second flow path 21. The inner cylinder 11 includes a plurality of openings 11h arranged along the first flow path 20 and connecting the second flow path 21 to the first flow path 20. With this configuration, the second source gas g2 is dispersed through the plurality of openings 11h and flows from the second flow path 21 into the first flow path 20. This allows the second source gas g2 to be supplied more uniformly to the substrate area 30. Therefore, for example, when a large substrate or a large number of substrates are placed in the substrate area 30, the distribution of the reaction gas g4 in the substrate area 30 can be improved.

[0049] The reactor 100 also includes first pressure adjustment means V1, V2, and P1 for adjusting the first pressure in the first flow path 20, second pressure adjustment means V3, V2, and P1 for adjusting the second pressure in the second flow path 21, and third pressure adjustment means V4, V5, and P2 for adjusting the third pressure in the third flow path 22. A control device 50 is communicatively connected to the first, second, and third pressure adjustment means V1, V2, V3, V4, V5, P1, and P2. The control device 50 controls the first, second, and third pressure adjustment means V1, V2, V3, V4, V5, P1, and P2 so that the second pressure is higher than the first pressure and the third pressure is higher than the second pressure. Each of the first, second, and third pressure adjustment means includes at least one of a valve and a pump. This configuration allows the pressure in the outer flow path to be higher than the pressure in the inner flow path. Therefore, leakage of the first source gas g1 can be further suppressed.

[0050] Next, other embodiments will be described.

[0051] 2 is a schematic diagram showing a reactor 200 according to a second embodiment. The reactor 200 differs from the reactor 100 of FIG. 1 in that the size (cross-sectional area) of the opening 11h of the inner cylinder 11 changes along the first flow path 20. The reactor 200 may be similar to the reactor 100 in other respects.

[0052] For example, the size of the openings 11h may be determined depending on how the second source gas g2 is distributed inside the inner cylinder 11. For example, in FIG. 2, the size of the multiple openings 11h increases downstream in the flow of the first source gas g1. Therefore, the amount of the second source gas g2 flowing from the second flow path 21 into the first flow path 20 increases downstream. With this configuration, the amount of the second source gas g2 downstream can be increased compared to the reactor 100 of FIG. 1.

[0053] In contrast, the size of the plurality of openings 11h may decrease downstream in the flow of the first source gas g1. In this case, the amount of the second source gas g2 flowing from the second flow path 21 into the first flow path 20 decreases downstream. With this configuration, the amount of the second source gas g2 downstream can be reduced compared to the reactor 100 of FIG.

[0054] The above-described reactor 200 can achieve the same effects as the reactor 100. In particular, in the reactor 200, the cross-sectional areas of the plurality of openings 11h change along the first flow path 20. Therefore, the distribution of the second source gas g2 flowing into the inner cylinder 11 can be adjusted.

[0055] 3 is a schematic diagram showing a reactor 300 according to a third embodiment. The reactor 300 differs from the reactor 100 of FIG. 1 in that the opening 11h of the inner cylinder 11 includes a nozzle 11n. The reactor 300 may be similar to the reactor 100 in other respects.

[0056] The nozzle 11n protrudes inward from the inner surface of the inner cylinder 11. The nozzle 11n protrudes from the inner surface of the inner cylinder 11 toward the substrate area 30. For example, the nozzle 11n may protrude perpendicular to the inner surface of the inner cylinder 11. Alternatively, for example, the nozzle 11n may be inclined with respect to the inner surface of the inner cylinder 11 so as to protrude downstream. For example, the nozzle 11n may have an opening at its innermost portion as shown in FIG. 3. Alternatively or additionally, the nozzle 11n may have an opening on its side. For example, the nozzle 11n may have multiple small openings so as to spray the second source gas g2 into the inner cylinder 11.

[0057] The above-described reactor 300 can achieve the same effects as the reactor 100. In particular, in the reactor 300, the opening 11h includes a nozzle 11n that protrudes inward from the inner surface of the inner cylinder 11. Therefore, the second source gas g2 can be supplied closer to the substrate area 30.

[0058] 4 is a schematic diagram showing a reactor 400 according to a fourth embodiment. The reactor 400 differs from the reactor 100 of FIG. 1 in that, instead of the second source gas g2, an inert gas (second inert gas) g6 flows through the second flow path 21, and the source gas flows only through the first flow path 20, and in that the position of the opening 11h is different. The reactor 400 may be similar to the reactor 100 in other respects.

[0059] In this embodiment, the source gas g5 is supplied from the inlet pipe 11a to the first flow path 20. For example, the source gas g5 includes methyltrichlorosilane or trichlorosilane. In other embodiments, for example, the source gas g5 may be a premixed gas of multiple source gases.

[0060] In this embodiment, an inert gas g6 is supplied from the inlet pipe 12a to the second flow path 21. For example, the inert gas g6 includes nitrogen, argon, or helium. For example, the inert gas g6 may be the same as the inert gas g3 flowing through the third flow path 22. In other embodiments, the inert gas g6 may be different from the inert gas g3.

[0061] In this embodiment, the opening 11h is provided downstream of the substrate area 30 in the flow of the source gas g5. A plurality of openings 11h may be provided along the first flow path 20. Alternatively, a plurality of openings 11h may be provided along the circumferential direction of the inner cylinder 11. The inert gas g6 flows from the second flow path 21 into the first flow path 20 through the openings 11h.

[0062] In this embodiment, the source gas g5 is mixed with the inert gas g6 that flows from the second flow path 21 into the first flow path 20. Therefore, the source gas g5 is diluted with the inert gas g6. As a result, a mixed gas g7 of the source gas g5 and the inert gas g6 is discharged from the outlet pipe 11b.

[0063] The reactor 400 as described above can suppress leakage of the source gas g5 having properties such as corrosiveness, similar to the reactor 100 of FIG.

[0064] In the reactor 400, the inert gas g6 flows through the second flow path 21, and the inner cylinder 11 includes an opening 11h located downstream of the substrate area 30 in the flow of the source gas g5 and connecting the second flow path 21 to the first flow path 20. With this configuration, the flow of the source gas g5, which may be corrosive, is surrounded by both the inert gas g6 in the second flow path 21 and the inert gas g3 in the third flow path 22. This improves the safety of the reactor 100. The inert gas g6 flows from the second flow path 21 into the first flow path 20 through the opening 11h located downstream of the substrate area 30. Therefore, downstream of the substrate area 30, the source gas g5 is diluted by the inert gas g6. Downstream of the substrate area 30, the source gas g5 is no longer needed. Therefore, the safety of the reactor 100 can be further improved by discharging the mixed gas g7 diluted with the inert gas g6 through the outlet pipe 11b.

[0065] 5 is a schematic diagram showing a reactor 500 according to a fifth embodiment. The reactor 500 differs from the reactor 400 of FIG. 4 in that the inner cylinder 11 does not include an opening and the inert gas g6 does not flow into the inner cylinder 11. The reactor 500 may be similar to the reactor 400 in other respects.

[0066] In this embodiment, the middle cylinder 12 is connected to the outlet pipe 12b. For example, the outlet pipe 12b is connected to the end of the middle cylinder 12 opposite to the inlet pipe 12a. The outlet pipe 13b discharges the inert gas g6 from the second flow path 21.

[0067] A valve V6 is provided in the outlet pipe 12b. The valve V6 is connected to the control device 50 via wire or wireless communication and is controlled by the control device 50. The control device 50 adjusts the opening of the valve V6 to control the flow rate of the inert gas g6 passing through the outlet pipe 12b.

[0068] A pump P3 is provided in the outlet pipe 12b. The pump P3 is communicably connected to the control device 50 via wire or wirelessly and is controlled by the control device 50. The control device 50 controls the output of the pump P3 and the flow rate of the inert gas g6 drawn from the second flow path 21.

[0069] In this embodiment, the second pressure in the second flow path 21 is controlled by a second pressure adjusting means including valves V3 and V6 and a pump P3. The control device 50 controls the valves V3 and V6 and the pump P3 so that the pressure measured by the pressure sensor S2 is adjusted to a predetermined negative pressure. Note that the second pressure adjusting means may further include additional elements, such as an additional valve or pump. Also, for example, the valve V6 may not be provided.

[0070] The reactor 500 as described above can suppress leakage of the source gas g5 having properties such as corrosiveness, similar to the reactor 100 of FIG.

[0071] Furthermore, in the reactor 500, an inert gas g6 flows through the second flow path 21. With this configuration, the flow of the source gas g5, which has properties such as corrosiveness, is surrounded by both the inert gas g6 in the second flow path 21 and the inert gas g3 in the third flow path 22. This improves the safety of the reactor 100.

[0072] Although the embodiments have been described above with reference to the accompanying drawings, the present disclosure is not limited to the above-described embodiments. It is clear that a person skilled in the art can conceive of various modifications or alterations within the scope of the claims, and it is understood that such modifications also fall within the technical scope of the present disclosure.

[0073] For example, in the above embodiment, the reactor is used to form SiC as a composite material. In other embodiments, the reactor may be used to manufacture semiconductors, such as silicon.

[0074] In the above embodiment, the inside of the reactor is adjusted to a negative pressure. That is, the reactor is used under a negative pressure. However, the present invention may be applied to a reactor used under a positive pressure.

[0075] Also, in the above embodiment, pumps P1, P2, and P3 are used, however, in other embodiments, a single pump may be used. [Explanation of symbols]

[0076] 11 Inner cylinder 11h opening 12 Middle tube 13 Outer cylinder 20 First Channel 21 Second Channel 22 Third Stream 30 substrate area 50 Control device 100 reactors 200 reactors 300 reactors 400 reactors 500 reactors g1 First source gas g2 Second source gas g3 Inert gas (first inert gas) g5 raw gas g6 Inert gas (second inert gas) P1 Pump (pressure adjustment means) P2 Pump (pressure adjustment means) P3 Pump (pressure adjustment means) V1 Valve (pressure adjustment means) V2 valve (pressure adjustment means) V3 valve (pressure adjustment means) V4 valve (pressure adjustment means) V5 Valve (pressure adjustment means) V6 valve (pressure adjustment means)

Claims

1. an inner cylinder including a first flow path through which a source gas flows and a substrate area for placing a substrate; a middle cylinder surrounding the inner cylinder and including a second flow path between the middle cylinder and the inner cylinder; an outer cylinder surrounding the intermediate cylinder, the outer cylinder including a third flow path through which an inert gas flows between the outer cylinder and the intermediate cylinder; Equipped with the inner cylinder is connected to a first outlet pipe that discharges a gas containing the source gas, the outer cylinder is connected to a second outlet pipe that is separate from the first outlet pipe and that discharges the inert gas; Reactor.

2. The raw material gas is a first source gas flowing through the first flow path; a second source gas flowing through the second flow path; Including, the inner cylinder includes a plurality of openings disposed along the first flow path and connecting the second flow path to the first flow path.

10. The reactor of claim 1.

3. a cross-sectional area of ​​the plurality of openings varies along the first flow path; 3. The reactor of claim 2.

4. a second inert gas flows through the second flow path; the inner cylinder includes an opening located downstream of the substrate area in the flow of the source gas and connecting the second flow path to the first flow path; 10. The reactor of claim 1.

5. a first pressure adjusting means for adjusting a first pressure in the first flow path; a second pressure adjusting means for adjusting a second pressure in the second flow path; a third pressure adjusting means for adjusting a third pressure in the third flow path; a control device communicatively connected to the first, second, and third pressure adjusting means; Equipped with the control device controls the first, second, and third pressure adjusting means so that the second pressure is higher than the first pressure and the third pressure is higher than the second pressure. A reactor according to any one of claims 1 to 4.

6. 6. The reactor of claim 5, wherein each of said first, second and third pressure regulating means includes at least one of a valve or a pump.

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