Substrate processing method and substrate processing apparatus

Abstract

To provide a substrate processing method and a substrate processing apparatus capable of accurately processing the outer peripheral edge of a substrate with a chemical solution.SOLUTION: By supplying a protective film forming liquid to a first main surface W1 of a substrate W, a protective film is formed on a first peripheral portion 110 of the substrate W (protective film forming step). By supplying an etchant to a second main surface W2 of the substrate with a polymer film 100 formed on the first peripheral portion 110, the outer peripheral edge E of the substrate W is treated with the chemical solution (first chemical solution supply step). After the first chemical solution supply step, the polymer film 100 is removed (protective film removing step).SELECTED DRAWING: Figure 6C

Description

[Technical Field]

[0001] The present invention relates to a substrate processing method for processing a substrate, and a substrate processing apparatus for processing a substrate.

[0002] Substrates to be processed include, for example, semiconductor wafers, substrates for FPDs (Flat Panel Displays) such as liquid crystal displays and organic EL (Electroluminescence) displays, substrates for optical disks, substrates for magnetic disks, substrates for magneto-optical disks, substrates for photomasks, ceramic substrates, and substrates for solar cells. [Background technology]

[0003] Patent Document 1 below discloses a substrate treatment method in which an etching inhibiting liquid is supplied to a non-device-forming surface of a substrate while an etching liquid is supplied to a device-forming surface of the substrate. In this substrate treatment, the etching liquid is diluted by the etching inhibiting liquid, thereby reducing the etching rate. [Prior art documents] [Patent documents]

[0004] [Patent Document 1] Japanese Patent Application Laid-Open No. 2016-139743 Summary of the Invention [Problem to be solved by the invention]

[0005] In the substrate processing disclosed in Patent Document 1, the boundary between the collision of the etching inhibitor liquid and the etching liquid is unclear, making it difficult to define the area of ​​the substrate edge and its vicinity that is processed by the etching liquid.

[0006] SUMMARY OF THE INVENTION It is therefore an object of the present invention to provide a substrate processing method and a substrate processing apparatus that can process the outer peripheral edge of a substrate with a chemical liquid with high precision. [Means for solving the problem]

[0007] One embodiment of the present invention provides a substrate processing method for processing a substrate having a first main surface having a first peripheral edge portion, a second main surface opposite the first main surface having a second peripheral edge portion, and an outer peripheral edge connecting the first peripheral edge portion and the second peripheral edge portion.

[0008] The substrate processing method includes a protective film forming process in which a protective film forming liquid is supplied to the first main surface to form a protective film on the first peripheral edge portion, a first chemical liquid supply process in which, while the protective film is formed on the first peripheral edge portion, a chemical liquid is supplied to the second main surface to treat the outer peripheral edge with the chemical liquid, and a protective film removal process in which, after the first chemical liquid supply process, the protective film is removed. In one embodiment of the present invention, the substrate processing method includes a protective film formation process in which a protective film forming liquid is supplied to the first main surface to form a protective film on the first peripheral edge portion so that the outer peripheral edge is exposed; a first chemical liquid supply process in which, while the protective film is formed on the first peripheral edge portion, a chemical liquid is supplied to the second main surface so that the chemical liquid reaches the outer peripheral edge exposed from the protective film and treats the outer peripheral edge with the chemical liquid; and a protective film removal process in which, after the first chemical liquid supply process, the protective film is removed. The first main surface may be a device surface on which devices having a concave-convex pattern are formed. The second main surface may be a non-device surface on which no devices are formed. The substrate may be a semiconductor wafer having the device surface and the non-device surface.

[0009] According to this method, a protective film forming liquid is supplied to the first main surface to form a protective film on a first peripheral edge portion of the first main surface, and then a chemical liquid is supplied to the second main surface while the protective film is formed on the first peripheral edge portion. By supplying the chemical liquid to the second main surface, the outer peripheral edge connecting the first peripheral edge portion of the first main surface and the second peripheral edge portion of the second main surface is treated with the chemical liquid.

[0010] When the outer peripheral edge is treated with a chemical solution, the first peripheral edge of the first main surface is protected by the protective film. Therefore, even if the chemical solution on the second main surface flows along the second peripheral edge and the outer peripheral edge and reaches the first peripheral edge, the first peripheral edge can be prevented from being treated with the chemical solution. Therefore, the outer peripheral edge of the substrate can be selectively treated with the chemical solution.

[0011] As a result, the outer peripheral edge of the substrate can be treated with the chemical solution with high precision.

[0012] In one embodiment of the present invention, the protective film forming step includes a high-speed rotation step of rotating the substrate at a first speed about a rotation axis passing through a center of the first main surface with the protective film forming solution adhered to the first main surface, and the substrate processing method further includes, after the first chemical solution supply step, a spin-dry step of drying the substrate by rotating the substrate at a second speed slower than the first speed.

[0013] According to this method, in the protective film forming step, the substrate is rotated at a first speed that is faster than the second speed when drying the substrate while the protective film forming liquid is attached to the first main surface, thereby preventing the protective film forming liquid on the first main surface from reaching the second peripheral edge portion via the outer circumferential edge.

[0014] In one embodiment of the present invention, the first chemical liquid supplying process includes a low-speed rotation process of rotating the substrate at a third speed that is slower than the first speed and the second speed while supplying the chemical liquid to the second main surface.

[0015] According to this method, the substrate is rotated at a first speed that is faster than the third speed in the first chemical liquid supplying step while the protective film formation liquid is adhered to the first main surface, thereby further preventing the protective film formation liquid on the first main surface from reaching the second peripheral edge portion via the outer peripheral edge.

[0016] In one embodiment of the present invention, the protective film removing step may include a removing liquid supplying step of supplying a removing liquid to the first main surface to remove the protective film, and a light irradiating step of irradiating the first main surface with light.

[0017] In one embodiment of the present invention, the protective film forming step includes a step of forming the protective film on the first peripheral edge portion so that an inner region adjacent to the first peripheral edge portion on the first main surface is exposed.

[0018] Therefore, compared to when the protective film is formed on the entire first main surface, the amount of protective film forming liquid used can be reduced, and the area on the first main surface where the protective film is formed can be made smaller. Furthermore, since the protective film is not formed on the inner area adjacent to the first peripheral edge portion on the first main surface, it is possible to prevent the protective film from remaining as residue in the inner area after the protective film removal step.

[0019] In one embodiment of the present invention, the first chemical liquid supplying step includes a step of delivering a chemical liquid from the second main surface to the first peripheral edge portion via the outer peripheral edge, and an inner peripheral edge of the protective film formed in the protective film forming step is located inside a position on the first peripheral edge portion of the first main surface where the chemical liquid reaches.

[0020] Therefore, even when the protective film is formed so that the region inside the first peripheral edge portion is exposed, it is possible to highly reliably prevent the chemical solution from reaching inside the inner peripheral edge of the protective film.

[0021] In one embodiment of the present invention, the protective film forming step includes the step of forming the protective film on the entire first main surface. This method can protect the entire first main surface from the chemical solution.

[0022] In one embodiment of the present invention, the substrate processing method further includes a second chemical liquid supplying step of supplying a chemical liquid toward the surface of the protective film while supplying the chemical liquid to the second main surface in the first chemical liquid supplying step. Particles and the like adhering to the surface of the protective film can be washed away by the chemical liquid. Therefore, when the protective film is removed in the protective film removing step, contamination of the first main surface by particles and the like adhering to the protective film can be suppressed.

[0023] In one embodiment of the present invention, the protective film forming step may include a polymer film forming step of forming a polymer film containing a polymer as the protective film by supplying a polymer-containing liquid as the protective film forming liquid to the first main surface. Also, the protective film forming step may include a hydrophobic film forming step of forming a hydrophobic film as the protective film by supplying a hydrophobizing liquid as the protective film forming liquid to the first main surface.

[0024] Another embodiment of the present invention provides a substrate processing apparatus for processing a substrate having a first main surface having a first peripheral edge portion, a second main surface opposite the first main surface having a second peripheral edge portion, and an outer peripheral edge connecting the first peripheral edge portion and the second peripheral edge portion.

[0025] The substrate processing apparatus includes a protective film forming member that supplies a protective film forming liquid to the first main surface to form a protective film on the first peripheral edge portion, a chemical liquid supply member that supplies a chemical liquid to the second main surface while the protective film is formed on the first peripheral edge portion to treat the second main surface and the outer peripheral edge with the chemical liquid, and a protective film removal unit that removes the protective film. In one embodiment of the present invention, the substrate processing apparatus includes: a protective film forming member that supplies a protective film forming liquid to the first main surface to form a protective film on the first peripheral edge portion so as to expose the outer peripheral edge; a chemical liquid supply member that supplies a chemical liquid to the second main surface while the protective film is formed on the first peripheral edge portion to treat the second main surface with the chemical liquid and allow the chemical liquid to reach the outer peripheral edge exposed from the protective film and treat the outer peripheral edge with the chemical liquid; and a protective film removal unit that removes the protective film. The first main surface may be a device surface on which devices having a concave-convex pattern are formed. The second main surface may be a non-device surface on which no devices are formed. The substrate may be a semiconductor wafer having the device surface and the non-device surface. One embodiment of the present invention provides a substrate processing method for processing a substrate having a first main surface with a first peripheral edge, a second main surface opposite the first main surface with a second peripheral edge, and an outer peripheral edge connecting the first and second peripheral edges, the substrate processing method including: a protective film forming step of supplying a protective film forming liquid to the first main surface to form a protective film on the first peripheral edge so that a region of a predetermined width is exposed from an end of the outer peripheral edge; a first chemical solution supplying step of supplying a chemical solution to the second main surface with the protective film formed on the first peripheral edge, allowing the chemical solution to reach a region of a predetermined width from the end of the outer peripheral edge that is exposed from the protective film, thereby treating the region of a predetermined width from the end of the outer peripheral edge that is exposed from the protective film with the chemical solution; and a protective film removing step of removing the protective film after the first chemical solution supplying step. The first main surface may be a device surface on which devices having a concave-convex pattern are formed. The second main surface may be a non-device surface on which no devices are formed. The substrate may be a semiconductor wafer having the device side and the non-device side. One embodiment of the present invention provides a substrate processing apparatus for processing a substrate having a first main surface having a first peripheral edge, a second main surface opposite the first main surface having a second peripheral edge, and an outer peripheral edge connecting the first and second peripheral edges, the substrate processing apparatus including: a protective film forming member that supplies a protective film forming liquid to the first main surface to form a protective film on the first peripheral edge so that a region of a predetermined width is exposed from an edge of the outer peripheral edge; a chemical liquid supply member that supplies a chemical liquid to the second main surface while the protective film is formed on the first peripheral edge to treat the second main surface with the chemical liquid and allow the chemical liquid to reach the region of the predetermined width from the edge of the outer peripheral edge where the protective film is exposed, and a protective film removal unit that removes the protective film. The first main surface may be a device surface on which devices having a concave-convex pattern are formed; and the second main surface may be a non-device surface on which no devices are formed. The substrate may be a semiconductor wafer having the device side and the non-device side. One embodiment of the present invention provides a substrate processing method for processing a substrate having a first main surface having a first peripheral edge portion, a second main surface opposite the first main surface having a second peripheral edge portion, and an outer peripheral edge connecting the first peripheral edge portion and the second peripheral edge portion, the substrate processing method including a protective film forming process of supplying a protective film forming liquid to the first main surface to form a protective film on the first peripheral edge portion so as to expose the outer peripheral edge, a first chemical liquid supply process of supplying a chemical liquid to the second main surface while the protective film is formed on the first peripheral edge portion, allowing the chemical liquid to reach the outer peripheral edge exposed from the protective film and treat the outer peripheral edge with the chemical liquid, a protective film removal process of removing the protective film after the first chemical liquid supply process, and a process of dry etching the first main surface after the protective film removal process. [Brief explanation of the drawings]

[0026] [Figure 1] FIG. 1 is a plan view illustrating an example of the configuration of a substrate processing apparatus according to a first embodiment of the present invention. [Figure 2] FIG. 2 is a schematic diagram for explaining the structure of a substrate to be processed in the substrate processing apparatus. [Figure 3] FIG. 3 is a schematic diagram for explaining the configuration of a wet processing unit provided in the substrate processing apparatus. [Figure 4] FIG. 4 is a block diagram for explaining the electrical configuration of the substrate processing apparatus. [Figure 5]FIG. 5 is a flowchart illustrating an example of substrate processing performed by the substrate processing apparatus. [Figure 6A] FIG. 6A is a schematic diagram for explaining the state of the peripheral edge portion of the upper surface of the substrate during the substrate processing. [Figure 6B] FIG. 6B is a schematic diagram for explaining the state of the peripheral edge portion of the upper surface of the substrate during the substrate processing. [Figure 6C] FIG. 6C is a schematic diagram for explaining the state of the peripheral edge portion of the upper surface of the substrate during the substrate processing. [Figure 6D] FIG. 6D is a schematic diagram for explaining the state of the peripheral edge portion of the upper surface of the substrate during the substrate processing. [Figure 7] FIG. 7 is a schematic diagram for explaining the configuration of a wet processing unit according to a modified example. [Figure 8A] FIG. 8A is a schematic diagram for explaining the state of the peripheral edge portion of the upper surface of a substrate during substrate processing performed using a wet processing unit according to a modified example. [Figure 8B] FIG. 8B is a schematic view for explaining the state of the peripheral edge portion of the upper surface of the substrate during substrate processing performed using the wet processing unit according to the modified example. [Figure 8C] FIG. 8C is a schematic view for explaining the state of the peripheral edge portion of the upper surface of the substrate during substrate processing performed using a wet processing unit according to the modified example. [Figure 8D] FIG. 8D is a schematic diagram for explaining the state of the peripheral edge portion of the upper surface of the substrate during substrate processing performed using a wet processing unit according to the modified example. [Figure 9] FIG. 9 is a plan view illustrating an example of the configuration of a substrate processing apparatus according to a second embodiment of the present invention. [Figure 10] FIG. 10 is a schematic view for explaining the configuration of a dry processing unit provided in the substrate processing apparatus according to the second embodiment. [Figure 11] FIG. 11 is a flowchart for explaining the substrate processing performed by the substrate processing apparatus according to the second embodiment. [Figure 12A] FIG. 12A is a schematic view for explaining the state of the peripheral edge portion of the upper surface of the substrate during substrate processing according to the second embodiment. [Figure 12B] FIG. 12B is a schematic view for explaining the state of the peripheral edge portion of the upper surface of the substrate during substrate processing according to the second embodiment. [Figure 12C] FIG. 12C is a schematic view for explaining the state of the peripheral edge portion of the upper surface of the substrate during substrate processing according to the second embodiment. DETAILED DESCRIPTION OF THE INVENTION

[0027] Hereinafter, an embodiment of the present invention will be described with reference to the accompanying drawings.

[0028] <Configuration of the Substrate Processing Apparatus According to the First Embodiment> FIG. 1 is a plan view illustrating an example of the configuration of a substrate processing apparatus 1 according to a first embodiment of the present invention.

[0029] The substrate processing apparatus 1 is a single-wafer processing apparatus that processes each substrate W. In this embodiment, the substrate W has a disk shape. The substrate W is a substrate such as a silicon wafer, and has a pair of main surfaces.

[0030] The substrate processing apparatus 1 includes a plurality of processing units 2 for processing substrates W, a load port LP (container holding unit) on which a carrier C (container) for accommodating a plurality of substrates W to be processed in the processing units 2 is placed, transport robots (first transport robot IR and second transport robot CR) for transporting the substrates W between the load port LP and the processing units 2, and a controller 3 for controlling each component provided in the substrate processing apparatus 1.

[0031] The first transport robot IR transports the substrate W between the carrier C and the second transport robot CR. The second transport robot CR transports the substrate W between the first transport robot IR and the processing unit 2. Each transport robot is, for example, an articulated arm robot.

[0032] The processing units 2 are arranged on both sides of the transport path TR along which the substrates W are transported by the second transport robot CR, and are stacked in the vertical direction.

[0033] The processing units 2 form four processing towers TW, which are arranged at four horizontally spaced positions. Each processing tower TW includes multiple processing units 2 stacked vertically. Two processing towers TW are arranged on each side of the transport path TR.

[0034] The processing unit 2 is a wet processing unit 2W that processes the substrate W with a processing liquid. Examples of the processing liquid include a protective film forming liquid, an etching liquid, a rinsing liquid, a removing liquid, etc., which will be described in detail later. The processing unit 2 includes a chamber 4 that accommodates the substrate W during substrate processing.

[0035] The chamber 4 includes an entrance / exit (not shown) through which the second transport robot CR loads the substrate W into the chamber 4 and loads the substrate W out of the chamber 4, and a shutter unit (not shown) that opens and closes the entrance. The wet processing unit 2W includes a processing cup 6 arranged in the chamber 4, and processes the substrate W in the processing cup 6.

[0036] FIG. 2 is a schematic diagram for explaining the structure of the substrate W to be processed in the substrate processing apparatus 1. As shown in FIG.

[0037] The substrate W has a pair of main surfaces (a first main surface W1 and a second main surface W2) and an outer peripheral edge E connecting the peripheral portions of the pair of main surfaces (a first peripheral portion 110 and a second peripheral portion 111). Each main surface may have a circular flat portion and an annular inclined portion that is connected to the flat portion and inclined relative to the flat portion. The peripheral portion of each main surface is made up of, for example, the entire inclined portion and a portion of the flat portion adjacent to the inclined portion.

[0038] The shape of the outer peripheral edge E is not limited, but in this embodiment, the outer peripheral edge E has an arc-shaped cross section that projects outward from the substrate W.

[0039] Each of the main surfaces may be a device surface on which devices having a concave-convex pattern are formed, or a non-device surface on which no devices are formed.

[0040] The pair of main surfaces is composed of a first main surface W1 and a second main surface W2 on the opposite side of the first main surface W1. The peripheral edge of the first main surface W1 is referred to as a first peripheral edge 110, and the peripheral edge of the second main surface W2 is referred to as a second peripheral edge 111. An outer peripheral edge E connects the first peripheral edge 110 and the second peripheral edge 111.

[0041] In this embodiment, the first main surface W1 is a device surface, and the second main surface W2 is a non-device surface.

[0042] The substrate W has an underlayer 112 and an underlayer outermost layer 113 formed on the underlayer 112 and exposed from the first main surface W1 and the outer peripheral edge E. The underlayer outermost layer 113 is, for example, an insulator layer or a metal layer. The underlayer 112 has, for example, a layered structure and is composed of at least one of a semiconductor layer, an insulator layer, and a metal layer. The underlayer 112 may have, for example, a single-layer structure composed of a semiconductor layer.

[0043] The insulating layer is, for example, silicon oxide (SiO2) or silicon nitride (SiN), the metal layer is, for example, tungsten (W), and the semiconductor layer is, for example, silicon (Si).

[0044] In the following, unless otherwise specified, an example will be described in which the top surface (upper main surface) is the first main surface W1 and the bottom surface (lower main surface) is the second main surface W2.

[0045] <Configuration of Wet Processing Unit According to First Embodiment> FIG. 3 is a schematic diagram for explaining the configuration of the wet processing unit 2W.

[0046] The wet processing unit 2W further includes a spin chuck 5 that rotates the substrate W around a rotation axis A1 while holding the substrate W in a predetermined first processing posture, a plurality of upper processing liquid nozzles (protective film forming liquid nozzle 8 and removal liquid nozzle 9) that eject processing liquid toward the upper surface (first main surface W1) of the substrate W held on the spin chuck 5, and a lower processing liquid nozzle 10 that selectively ejects an etching liquid and a rinsing liquid toward the lower surface (second main surface W2) of the substrate W held on the spin chuck 5.

[0047] The spin chuck 5, the plurality of upper processing liquid nozzles, and the lower processing liquid nozzle 10 are disposed in the chamber 4.

[0048] The rotation axis A1 passes through the center CP of the top surface of the substrate W and is perpendicular to each main surface of the substrate W held in the first processing posture. In this embodiment, the first processing posture is a horizontal posture in which the main surface of the substrate W is a horizontal plane. The horizontal posture is the posture of the substrate W shown in Figure 3, and when the first processing posture is the horizontal posture, the rotation axis A1 extends vertically.

[0049] The spin chuck 5 is surrounded by a processing cup 6. The spin chuck 5 includes a spin base 20 that adsorbs to the lower surface of the substrate W and holds the substrate W in a first processing posture, a rotation shaft 21 that extends along a rotation axis A1 and is coupled to the spin base 20, and a rotation drive mechanism 22 that rotates the rotation shaft 21 about the rotation axis A1.

[0050] The spin base 20 has an attraction surface 20a that attracts the substrate W to the lower surface thereof. The attraction surface 20a is, for example, the upper surface of the spin base 20, and is a circular surface with the rotation axis A1 passing through its center. The diameter of the attraction surface 20a is smaller than the diameter of the substrate W. The upper end of the rotation shaft 21 is connected to the spin base 20.

[0051] A suction path 23 is inserted into the spin base 20 and the rotation shaft 21. The suction path 23 has a suction port 23a exposed from the center of the chucking surface 20a of the spin base 20. The suction path 23 is connected to a suction pipe 24. The suction pipe 24 is connected to a suction device 25 such as a vacuum pump. The suction device 25 may constitute a part of the substrate processing apparatus 1, or may be a device separate from the substrate processing apparatus 1 that is provided in a facility where the substrate processing apparatus 1 is installed.

[0052] The suction pipe 24 is provided with a suction valve 26 that opens and closes the suction pipe 24. By opening the suction valve 26, the substrate W placed on the suction surface 20a of the spin base 20 is sucked into the suction port 23a of the suction path 23. As a result, the substrate W is sucked onto the suction surface 20a from below and held in the first processing posture.

[0053] The rotation shaft 21 is rotated by the rotation drive mechanism 22, thereby rotating the spin base 20. As a result, the substrate W is rotated together with the spin base 20 around the rotation axis A1.

[0054] The spin base 20 is an example of a substrate holding member that holds the substrate W in a predetermined first processing position (horizontal position). The spin chuck 5 is an example of a rotation holding unit that rotates the substrate W about the rotation axis A1 while holding the substrate W in the predetermined first processing position (horizontal position). The spin chuck 5 is also referred to as an attraction rotation unit that rotates the substrate W while attracting the substrate W to the attraction surface 20a.

[0055] The upper surface processing liquid nozzles include a protective film forming liquid nozzle 8 that discharges a continuous flow of a protective film forming liquid toward the upper surface of the substrate W held on the spin chuck 5, and a removing liquid nozzle 9 that discharges a continuous flow of a removing liquid toward the upper surface of the substrate W held on the spin chuck 5. Each upper surface processing liquid nozzle has an outlet 15 that discharges the processing liquid obliquely with respect to the upper surface of the substrate W.

[0056] The plurality of upper processing liquid nozzles are moved in a direction (horizontal direction) along the upper surface of the substrate W by a plurality of nozzle driving mechanisms (first nozzle driving mechanism 27 and second nozzle driving mechanism 28). The nozzle driving mechanisms can move the corresponding upper processing liquid nozzles between a central position and a retracted position. Each nozzle driving mechanism can also position the corresponding upper processing liquid nozzle at a peripheral position.

[0057] The central position is a position where the outlet 15 of the upper processing liquid nozzle faces the center of rotation (center CP) of the upper surface of the substrate W. The retracted position is a position where the outlet 15 of the upper processing liquid nozzle does not face the upper surface of the substrate W, and is a position outside the processing cup 6. The peripheral position is a position where the outlet 15 of the upper processing liquid nozzle faces the peripheral portion of the upper surface of the substrate W.

[0058] Each nozzle driving mechanism includes an arm (not shown) that supports the corresponding upper processing liquid nozzle, and an arm driving mechanism (not shown) that moves the arm in a direction (horizontal direction) along the upper surface of the substrate W. The arm driving mechanism includes an actuator such as an electric motor or an air cylinder.

[0059] Each upper processing liquid nozzle may be a rotary nozzle that rotates around a predetermined rotation axis, or a linear nozzle that moves linearly in the direction in which the arm extends. Each upper processing liquid nozzle may also be configured to be movable vertically. Other nozzle movement mechanisms described below have similar configurations.

[0060] The protective film formation liquid discharged from the protective film formation liquid nozzle 8 is a polymer-containing liquid that contains a polymer and a solvent. The protective film formation liquid nozzle 8 is also called a polymer-containing liquid nozzle.

[0061] The polymer contained in the protective film forming solution has lower solubility in the etching solution than in the removing solution. The polymer has lower solubility in the rinsing solution than in the removing solution. In other words, the polymer has the property of being more soluble in the removing solution than in the etching solution and the rinsing solution.

[0062] Examples of polymers contained in the protective film forming liquid include acrylic resin, phenolic resin, epoxy resin, melamine resin, urea resin, unsaturated polyester resin, alkyd resin, polyurethane, polyimide, polyethylene, polypropylene, polyvinyl chloride, polystyrene, polyvinyl acetate, polytetrafluoroethylene, acrylonitrile butadiene styrene resin, acrylonitrile styrene resin, polyamide, polyacetal, polycarbonate, polyvinyl alcohol, modified polyphenylene ether, polybutylene terephthalate, polyethylene terephthalate, polyphenylene sulfide, polysulfone, polyether ether ketone, polyamide imide, etc. The polymer may also be a mixture of these.

[0063] The solvent contained in the protective film forming liquid has the property of dissolving the polymer, and the solvent contains an organic solvent such as isopropanol (IPA).

[0064] The solvent contains at least one of alcohols such as ethanol (EtOH) and IPA; ethylene glycol monoalkyl ethers such as ethylene glycol monomethyl ether and ethylene glycol monoethyl ether; ethylene glycol monoalkyl ether acetates such as ethylene glycol monomethyl ether acetate and ethylene glycol monoethyl ether acetate; propylene glycol monoalkyl ethers such as propylene glycol monomethyl ether (PGME) and propylene glycol monoethyl ether (PGEE); lactic acid esters such as methyl lactate and ethyl lactate (EL); aromatic hydrocarbons such as toluene and xylene; and ketones such as acetone, methyl ethyl ketone, 2-heptanone, and cyclohexanone.

[0065] The protective film forming liquid nozzle 8 is connected to a protective film forming liquid pipe 40 that guides the protective film forming liquid to the protective film forming liquid nozzle 8. The protective film forming liquid pipe 40 is provided with a protective film forming liquid valve 50 that opens and closes the protective film forming liquid pipe 40. When the protective film forming liquid valve 50 is opened, a continuous flow of the protective film forming liquid is ejected from the protective film forming liquid nozzle 8.

[0066] Providing the protective film formation liquid valve 50 in the protective film formation liquid piping 40 may mean that the protective film formation liquid valve 50 is interposed in the protective film formation liquid piping 40. The same applies to the other valves described below.

[0067] Although not shown, the protective film forming liquid valve 50 includes a valve body with a valve seat provided therein, a valve element that opens and closes the valve seat, and an actuator that moves the valve element between an open position and a closed position. The other valves have a similar configuration.

[0068] At least a part of the solvent in the protective film formation liquid supplied to the upper surface of the substrate W evaporates, and the protective film formation liquid on the substrate W changes into a semi-solid or solid polymer film.

[0069] A semi-solid state refers to a state in which solid and liquid components are mixed, or a state in which the viscosity is such that the film can maintain a certain shape on the substrate W. A solid state refers to a state in which the film does not contain any liquid components and is composed only of solid components. Therefore, the polymer film does not spread on the upper surface of the substrate W, but remains in the position where it was formed. A polymer film in which the solvent remains is called a semi-solid film, and a polymer film in which the solvent has completely evaporated is called a solid film. A polymer film is an example of a protective film.

[0070] The removal liquid discharged from the removal liquid nozzle 9 is a liquid that dissolves the polymer film and thereby removes the polymer film from the upper surface of the substrate W. The removal liquid is a liquid that dissolves the polymer film more easily than the etching liquid and the rinse liquid. The polymer film remaining on the upper surface of the substrate W may be removed from the upper surface of the substrate W by being pushed out of the substrate W by energy acting from the liquid flow of the removal liquid.

[0071] The removal liquid discharged from the removal liquid nozzle 9 is, for example, an organic solvent such as IPA. The liquids listed as organic solvents used as solvents for the polymer film-containing liquid can be used as the removal liquid. That is, the same type of liquid as the solvent for the protective film-forming liquid can be used as the removal liquid. Furthermore, ozone water, which has oxidizing power to remove organic substances such as polymers, can also be used as the removal liquid.

[0072] The removing liquid nozzle 9 is connected to a removing liquid pipe 41 that guides the removing liquid to the removing liquid nozzle 9. The removing liquid pipe 41 is provided with a removing liquid valve 51 that opens and closes the removing liquid pipe 41. When the removing liquid valve 51 is opened, a continuous flow of removing liquid is discharged from the removing liquid nozzle 9.

[0073] The lower processing liquid nozzle 10 selectively discharges a continuous flow of an etching liquid and a continuous flow of a rinsing liquid toward the lower surface of the substrate W held on the spin chuck 5.

[0074] The etching liquid discharged from the lower processing liquid nozzle 10 is a liquid that etches the substrate W. The etching liquid contains, for example, hydrogen peroxide (H2O2), ozone water, hydrofluoric acid (HF), dilute hydrofluoric acid (DHF), buffered hydrofluoric acid (BHF), hydrochloric acid (HCl), HPM liquid (hydrochloric acid-hydrogen peroxide mixture), SPM liquid (sulfuric acid / hydrogen peroxide mixture), ammonia water, TMAH liquid (tetramethylammonium hydroxide solution), APM liquid (ammonia-hydrogen peroxide mixture), FPM liquid (hydrofluoric acid-hydrogen peroxide mixture), or FOM liquid (hydrofluoric acid-ozone mixture).

[0075] The rinse liquid discharged from the lower processing liquid nozzle 10 is a liquid that rinses the upper surface of the substrate W and removes the etching liquid from the upper surface of the substrate W. The rinse liquid is, for example, water such as DIW. However, the rinse liquid is not limited to DIW. The rinse liquid may be, for example, carbonated water, electrolytic ion water, hydrochloric acid water with a diluted concentration (for example, 1 ppm or more and 100 ppm or less), ammonia water with a diluted concentration (for example, 1 ppm or more and 100 ppm or less), or reduced water (hydrogen water).

[0076] The lower processing liquid nozzle 10 is connected to a lower processing liquid pipe 42 that guides the processing liquid to the lower processing liquid nozzle 10. A lower etching liquid pipe 43 that supplies an etching liquid to the lower processing liquid pipe 42 and a lower rinse liquid pipe 44 that supplies a rinse liquid to the lower processing liquid pipe 42 are connected to the lower processing liquid pipe 42. The lower processing liquid pipe 42 may be connected to the lower etching liquid pipe 43 and the lower rinse liquid pipe 44 via a mixing valve (not shown).

[0077] The lower etching liquid pipe 43 is provided with a lower etching liquid valve 53 that opens and closes the lower etching liquid pipe 43. The lower rinsing liquid pipe 44 is provided with a lower rinsing liquid valve 54 that opens and closes the lower rinsing liquid pipe 44.

[0078] The position of the lower processing liquid nozzle 10 is fixed relative to the spin chuck 5. The lower processing liquid nozzle 10 has a discharge port 16 directed toward the peripheral portion of the lower surface of the substrate W. When the lower etching liquid valve 53 is opened, a continuous flow of etching liquid is discharged from the lower processing liquid nozzle 10 toward the peripheral portion of the lower surface of the substrate W. When the lower rinse liquid valve 54 is opened, a continuous flow of rinse liquid is discharged from the lower processing liquid nozzle 10 toward the peripheral portion of the lower surface of the substrate W.

[0079] The lower processing liquid nozzle 10 only needs to supply the processing liquid to the lower surface of the substrate W, and does not necessarily need to eject the processing liquid toward the peripheral edge of the lower surface of the substrate W.

[0080] There is no particular limitation on the configuration of processing cup 6. Processing cup 6 includes, for example, a plurality of guards 31 (two in FIG. 3 ) that receive the processing liquid splashed outward from substrate W held on spin chuck 5, a plurality of cups 32 (two in FIG. 3 ) that receive the processing liquid guided downward by the plurality of guards 31, and a cylindrical outer wall member 33 that surrounds the plurality of guards 31 and the plurality of cups 32.

[0081] Each guard 31 has a cylindrical shape that surrounds the spin chuck 5 in the normal direction to the flat portion of the first main surface W1 of the substrate W (hereinafter simply referred to as "plan view"). The upper end of each guard 31 is inclined toward the inside of the guard 31. Each cup 32 has the shape of an annular groove that opens upward. The multiple guards 31 and the multiple cups 32 are arranged coaxially.

[0082] The multiple guards 31 are individually raised and lowered by a guard lifting / lowering drive mechanism (not shown). The guard lifting / lowering drive mechanism includes, for example, multiple actuators that drive the multiple guards 31 to lift and lower, respectively. The multiple actuators include at least one of an electric motor and an air cylinder.

[0083] <Electrical Configuration of Substrate Processing According to First Embodiment> 4 is a block diagram for explaining the electrical configuration of the substrate processing apparatus 1. The controller 3 includes a microcomputer, and controls the controlled objects provided in the substrate processing apparatus 1 according to a predetermined control program.

[0084] Specifically, the controller 3 includes a processor 3A (CPU) and a memory 3B that stores a control program. The controller 3 is configured to perform various controls for substrate processing by the processor 3A executing the control program.

[0085] In particular, the controller 3 is programmed to control the first transport robot IR, the second transport robot CR, the rotation drive mechanism 22, the first nozzle drive mechanism 27, the second nozzle drive mechanism 28, the suction valve 26, the protective film forming liquid valve 50, the removal liquid valve 51, the lower surface etching liquid valve 53, the lower surface rinse liquid valve 54, etc.

[0086] The following steps are performed by the controller 3 controlling the components included in the substrate processing apparatus 1. In other words, the controller 3 is programmed to perform the following steps.

[0087] 4 shows representative members, but this does not mean that members not shown are not controlled by the controller 3, and the controller 3 can appropriately control each member provided in the substrate processing apparatus 1. In FIG. 4, members to be described in the modified examples and the second embodiment, which will be described later, are also shown, and these members are also controlled by the controller 3.

[0088] <Example of substrate processing> Fig. 5 is a flowchart illustrating an example of substrate processing performed by the substrate processing apparatus 1. Figs. 6A to 6D are schematic views illustrating the state of the first peripheral edge portion 110 of the first main surface W1 of the substrate W during substrate processing.

[0089] In substrate processing by the substrate processing apparatus 1, for example, as shown in FIG. 5, a loading process (step S1), a protective film forming process (step S2), an etching process (step S3), a rinsing process (step S4), a protective film removing process (step S5), a spin-drying process (step S6), and an unloading process (step S7) are performed.

[0090] The substrate processing will be described in detail below, mainly with reference to Figures 3 and 5. Figures 6A to 6D will also be referenced as appropriate.

[0091] First, an unprocessed substrate W is carried from the carrier C into the wet processing unit 2W by the second transport robot CR (see FIG. 1) and handed over to the spin chuck 5 (carry-in step: step S1). As a result, the substrate W is held in a first processing posture by the spin chuck 5 (substrate holding step). At this time, the substrate W is held by the spin chuck 5 so that the first main surface W1 faces upward. The spin chuck 5 starts to rotate the substrate W while holding it (substrate rotation step).

[0092] After the second transport robot CR retreats from the chamber 4, a protective film forming step (step S2) is performed to form a polymer film 100 (see FIG. 6B) as a protective film on the first peripheral edge portion 110 of the first main surface W1 of the substrate W.

[0093] Specifically, the first nozzle driving mechanism 27 moves the protective film formation liquid nozzle 8 to the peripheral position. With the protective film formation liquid nozzle 8 positioned at the peripheral position, the protective film formation liquid valve 50 is opened. As a result, as shown in FIG. 6A , the protective film formation liquid is supplied (discharged) from the protective film formation liquid nozzle 8 toward the first peripheral portion 110 of the first main surface W1 (protective film formation liquid supply step, protective film formation liquid discharge step). The protective film formation liquid nozzle 8 is an example of a protective film formation liquid discharge member.

[0094] The protective film formation liquid discharged from the protective film formation liquid nozzle 8 lands on the first peripheral edge 110 of the first main surface W1 of the substrate W. The protective film formation liquid on the substrate W moves toward the outer circumferential edge E of the substrate W due to centrifugal force caused by the rotation of the substrate W. As a result, the first peripheral edge 110 of the first main surface W1 is covered with the protective film formation liquid so that the region (inner region 114) on the first main surface W1 of the substrate W that is inside the first peripheral edge 110 is exposed (periphery covering process). The inner region 114 is a region adjacent to the first peripheral edge 110 and includes the center CP and its surrounding area.

[0095] After the discharge of the protective film formation liquid has stopped, the rotation of the substrate W continues, causing a portion of the protective film formation liquid on the substrate W to be scattered from the outer peripheral edge E of the substrate W to the outside of the substrate W. This thins the liquid film of the protective film formation liquid on the substrate W (spin-off process, thinning process). After the protective film formation liquid valve 50 is closed, the first nozzle driving mechanism 27 moves the protective film formation liquid nozzle 8 to the retracted position.

[0096] The centrifugal force caused by the rotation of the substrate W acts not only on the protective film formation liquid on the substrate W, but also on the gas in contact with the protective film formation liquid on the substrate W. Therefore, the centrifugal force causes the gas to form a radial airflow moving from the center CP to the outer circumferential edge E. This airflow removes the gaseous solvent in contact with the protective film formation liquid on the substrate W from the atmosphere in contact with the substrate W. This promotes evaporation (volatilization) of the solvent from the protective film formation liquid on the substrate W, and as shown in FIG. 6B, a polymer film 100 is formed (evaporation formation process, polymer film formation process). The protective film formation liquid nozzle 8 functions as a protective film formation member (polymer film formation member).

[0097] In the protective film forming step, the rotation of the substrate W is accelerated at a predetermined protective film forming acceleration until the rotation speed of the substrate W reaches a protective film forming speed (first speed) (high-speed rotation step). The protective film forming speed is, for example, 1500 rpm or more and 4000 rpm or less. The protective film forming acceleration is, for example, 150 rad / sec 2 More than 2000rad / sec 2 In the protective film forming step, the rotation speed of the substrate W may reach the protective film formation speed before the supply of the protective film formation liquid is stopped, or may reach the protective film formation speed after the supply of the protective film formation liquid is stopped.

[0098] The polymer film 100 is annular and covers the first peripheral edge portion 110 of the first main surface W1 of the substrate W. Since the substrate W is rotated at high speed in the protective film forming step, the protective film forming liquid is easily scattered from the substrate W and is not easily attached to the outer peripheral edge E. Therefore, the polymer film 100 is not adhered to the outer peripheral edge E. (More specifically, a region of a predetermined width from the end of the outer peripheral edge E) The width L1 of the outer peripheral edge E that is exposed without being covered by the polymer film 100 (Predetermined width from the edge of the outer periphery E) is preferably, for example, 0.3 mm or less.

[0099] After the protective film forming step, an etching solution is supplied to the second main surface W2 in a state where the polymer film 100 (protective film) is formed on the first peripheral edge portion 110 of the first main surface W1, The etching solution is allowed to reach the outer peripheral edge E, An etching step (step S3) of etching the outer circumferential edge E is performed.

[0100] Specifically, the lower etching liquid valve 53 is opened. As a result, the etching liquid is discharged from the lower processing liquid nozzle 10 toward the second peripheral portion 111 of the second main surface W2 of the substrate W (first etching liquid supply step, first chemical liquid discharge step). The etching liquid discharged from the lower processing liquid nozzle 10 lands on the second peripheral portion 111.

[0101] The etching liquid on the second main surface W2 moves toward the outer circumferential edge E of the substrate W due to the centrifugal force caused by the rotation of the substrate W. and reaches the outer edge E The etching liquid is scattered from the outer peripheral edge E of the substrate W by centrifugal force.

[0102] As shown in FIG. 6C, at least a portion of the etching liquid flows down the outer peripheral edge E of the substrate W and is supplied to the first peripheral edge portion 110 of the first main surface W1. The etching liquid does not reach the inner peripheral edge 100a of the polymer film 100 at the first peripheral edge 110 of the first main surface W1, but remains outside the inner peripheral edge 100a. The inner peripheral edge 100a of the polymer film 100 is located inside the position where the etching liquid reaches (the inner peripheral edge 101 of the etching liquid). As a result, the outer peripheral edge E of the substrate W is etched.

[0103] In this manner, with the polymer film 100 formed on the first peripheral edge portion 110, an etching liquid is supplied to the second main surface W2, and the outer peripheral edge E is processed with the etching liquid (first etching liquid supply step, first chemical liquid supply step). The lower processing liquid nozzle 10 is an example of a first chemical liquid supply member.

[0104] When the outer circumferential edge E is treated with the etching liquid, the first peripheral edge portion 110 of the first main surface W1 is protected by the polymer film 100. Therefore, even if the etching liquid on the second main surface W2 flows along the second peripheral edge portion 111 and the outer circumferential edge E and reaches the first peripheral edge portion 110, the first peripheral edge portion 110 can be prevented from being treated with the etching liquid. Therefore, the outer circumferential edge E of the substrate W can be selectively treated with the etching liquid. As a result, the outer circumferential edge E of the substrate W can be treated with the etching liquid with high precision.

[0105] The width L1 of the outer circumferential edge E that is not covered by the polymer film 100 and is exposed corresponds to the width of the portion of the substrate W that is etched, that is, the etching width.

[0106] In the etching step, the rotation of the substrate W is decelerated and reaches an etching rotation speed (third speed) (low-speed rotation step). The etching rotation speed is, for example, 500 rpm or more and 1500 rpm or less. When the etching rotation speed is 1500 rpm, it is preferable that the protective film formation speed is greater than 1500 rpm and 4000 rpm or less.

[0107] Next, a rinse step (step S4) is performed in which a rinse liquid is supplied to the second main surface W2 to remove the etching liquid from the substrate W.

[0108] Specifically, the lower etching liquid valve 53 is closed to stop the discharge of the etching liquid from the lower processing liquid nozzle 10. Then, the lower rinse liquid valve 54 is opened to discharge the rinse liquid from the lower processing liquid nozzle 10 toward the second peripheral portion 111 of the second main surface W2 (first rinse liquid discharge step). The rinse liquid discharged from the lower processing liquid nozzle 10 lands on the second peripheral portion 111.

[0109] The rinse liquid on the second main surface W2 spreads toward the outer circumferential edge E of the substrate W due to centrifugal force caused by the rotation of the substrate W. The rinse liquid is scattered from the outer circumferential edge E of the substrate W due to centrifugal force.

[0110] 6D, at least a portion of the rinse liquid flows along the outer peripheral edge E of the substrate W and is supplied to the first peripheral edge 110 of the first main surface W1. The rinse liquid does not reach the inner peripheral edge 100a of the polymer film 100 at the first peripheral edge 110 of the first main surface W1, but remains outside the inner peripheral edge 100a. The inner peripheral edge 100a of the polymer film 100 is located inside the position where the rinse liquid reaches (the inner peripheral edge 102 of the rinse liquid).

[0111] As a result, the etching liquid adhering to the surface, outer peripheral edge E, and second main surface W2 of the polymer film 100 is expelled together with the rinse liquid to the outside of the substrate W. As a result, the etching liquid is removed from the surface, outer peripheral edge E, and second main surface W2 of the polymer film 100. The lower processing liquid nozzle 10 is an example of a rinse liquid supplying member that supplies a rinse liquid to the lower surface of the substrate W and removes the etching liquid from the outer peripheral edge E of the substrate W.

[0112] In this manner, with polymer film 100 formed on first peripheral edge portion 110, a rinse liquid is supplied to second main surface W2, and the etching liquid is removed from outer peripheral edge E (first rinse liquid supplying step).

[0113] In the rinsing step, the substrate W is rotated at a predetermined rinsing rotation speed (fourth speed). The rinsing rotation speed is, for example, 100 rpm or more and 2000 rpm or less. The rinsing rotation speed may be the same as the etching rotation speed.

[0114] Next, a protective film removing step (step S5) is performed in which a remover is supplied toward the first main surface W1 of the substrate W to remove the polymer film 100 from the first peripheral edge portion 110 of the first main surface W1.

[0115] Specifically, the second nozzle driving mechanism 28 moves the removing liquid nozzle 9 to the peripheral position. With the removing liquid nozzle 9 positioned at the peripheral position, the removing liquid valve 51 is opened. As a result, the removing liquid is supplied (discharged) from the removing liquid nozzle 9 toward the first peripheral portion 110 of the first main surface W1 of the substrate W (removing liquid supplying step, removing liquid discharging step).

[0116] The removing liquid discharged from the removing liquid nozzle 9 lands on the first peripheral edge portion 110 of the first main surface W1 of the substrate W. The removing liquid on the first main surface W1 moves toward the outer circumferential edge E of the substrate W due to centrifugal force caused by the rotation of the substrate W, and is scattered from the outer circumferential edge E of the substrate W.

[0117] The polymer film 100 is dissolved in the removing liquid and is discharged from the first main surface W1 together with the removing liquid in which the polymer film 100 has dissolved. It is not necessary for all of the polymer film 100 to be dissolved in the removing liquid, and a portion of the polymer film 100 may be peeled off from the first main surface W1 of the substrate W by the liquid flow of the removing liquid and discharged outside the substrate W. In this way, after the first chemical liquid supplying step, the polymer film 100 as a protective film is removed from the first peripheral edge portion 110 of the first main surface W1 (protective film removing step, polymer film removing step). The removing liquid nozzle 9 is an example of a protective film removing unit.

[0118] Next, a spin-drying step (step S6) is performed to spin the substrate W and dry the substrate W. Specifically, the removing liquid valve 51 is closed to stop the supply of the removing liquid to the upper surface of the substrate W, and the second nozzle driving mechanism 28 retracts the removing liquid nozzle 9 to the retracted position.

[0119] Then, the rotation of the substrate W is accelerated, and the rotation speed of the substrate W reaches a drying speed (second speed). The drying speed is higher than the etching rotation speed (third speed) and the rinsing speed (fourth speed) and lower than the protective film formation speed (first speed). The drying speed is, for example, 1500 rpm or higher and 2000 rpm or lower. Even if the drying speed is a predetermined rotation speed in the range of 1500 rpm or higher and 2000 rpm or lower, the protective film formation speed can be selected to be any speed in the range of 1500 rpm or higher and 4000 rpm or lower that is higher than the drying speed.

[0120] By rotating the substrate W at the third speed, centrifugal force acts on the liquid (mainly the removal liquid) on the substrate W. As a result, the liquid is thrown off around the substrate W.

[0121] After the spin dry step (step S6), the spin chuck 5 stops the rotation of the substrate W. Thereafter, the second transport robot CR enters the wet processing unit 2W, receives the processed substrate W from the spin chuck 5, and carries it out of the wet processing unit 2W (carry-out step: step S7). The substrate W is handed over from the second transport robot CR to the first transport robot IR, and is stored in the carrier C by the first transport robot IR.

[0122] <Summary of the First Embodiment> Unlike the first embodiment, when substrate processing is performed to expose the underlying outermost layer 113 at the first peripheral edge portion 110 of the substrate W, there is a risk that the underlying outermost layer 113 may be damaged at the first peripheral edge portion 110 of the first main surface W1 during dry etching that may be performed after the substrate processing. The damage may cause irregularities in the underlying outermost layer 113, and particles or the like may enter the recesses that make up the irregularities.

[0123] According to the first embodiment, the polymer film 100 is formed so as to expose the outer peripheral edge E, and the outer peripheral edge E is then etched. This allows the etching width to be extremely small. This in turn allows the area damaged by dry etching to be small. This in turn allows the generation of particles after dry etching to be suppressed.

[0124] The viscosity of the protective film forming liquid is preferably 0.1 Pa·sec or more and 15 Pa·sec or less, so that the width L1 of the outer peripheral edge E that is exposed without being covered by the polymer film 100 can be further reduced.

[0125] Furthermore, the thickness of the polymer film 100 is preferably 0.3 mm or less, which allows the width L1 of the outer peripheral edge E that is exposed without being covered by the polymer film 100 to be further reduced.

[0126] According to the first embodiment, in the protective film forming step, with the protective film formation liquid adhering to the first main surface W1, the substrate W is rotated at a protective film formation speed (first speed) that is higher than the rotation speed of the substrate W during spin drying (second speed) (high-speed rotation step). This makes it possible to further prevent the protective film formation liquid on the first main surface W1 from reaching the second peripheral edge portion 111 via the outer circumferential edge E.

[0127] In the etching step, the substrate W is rotated at an etching rotation speed (third speed) that is slower than the protective film formation speed (first speed) (low-speed rotation step). This prevents the protective film formation liquid on the first main surface W1 from reaching the second peripheral edge portion 111 via the outer circumferential edge E.

[0128] According to the first embodiment, the polymer film 100 is formed on the first peripheral portion 110 so as to expose the inner region 114 of the first main surface W1. Therefore, compared to when the polymer film 100 is formed on the entire first main surface W1, the amount of protective film forming liquid used can be reduced, and the region on the first main surface W1 where the polymer film 100 is formed can be made smaller. Furthermore, because the polymer film 100 is not formed on the inner region 114 in the protective film forming step, it is possible to prevent the polymer film 100 from remaining as residue in the inner region 114 after the protective film removing step.

[0129] Furthermore, in the protective film removal step of the substrate processing according to the first embodiment, the inner region 114 is exposed, but the removing liquid may be discharged from the removing liquid nozzle 9 toward the center CP of the first main surface W1 of the substrate W to supply the removing liquid to the entire first main surface W1 of the substrate W. In this case, the entire first main surface W1 of the substrate W can be cleaned with the removing liquid.

[0130] <Wet Processing Unit According to Modification> 7 is a schematic diagram illustrating the configuration of a wet processing unit 2W according to a modified example. As shown in FIG. 7, the multiple upper processing liquid nozzles of the wet processing unit 2W may include an etching liquid nozzle 11 and a rinsing liquid nozzle 12 in addition to a protective film forming liquid nozzle 8 and a removing liquid nozzle 9. Furthermore, the outlet 15 of each upper processing liquid nozzle may be configured to discharge the processing liquid perpendicular (vertical direction) to the upper surface of the substrate W.

[0131] The nozzle drive mechanism that moves the etching liquid nozzle 11 in a direction (horizontal direction) along the upper surface of the substrate W is referred to as a third nozzle drive mechanism 29. The nozzle drive mechanism that moves the rinse liquid nozzle 12 in a direction (horizontal direction) along the upper surface of the substrate W is referred to as a fourth nozzle drive mechanism 30. Details of the nozzle drive mechanism are as described above.

[0132] The etching liquid discharged from the etching liquid nozzle 11 can be any of the liquids listed as the etching liquid discharged from the lower processing liquid nozzle 10. The rinse liquid discharged from the rinse liquid nozzle 12 can be any of the liquids listed as the rinse liquid discharged from the lower processing liquid nozzle 10.

[0133] The etching solution nozzle 11 is connected to an etching solution pipe 45 that guides the etching solution to the etching solution nozzle 11. The etching solution pipe 45 is provided with an etching solution valve 55 that opens and closes the etching solution pipe 45. When the etching solution valve 55 is opened, a continuous flow of etching solution is discharged from the etching solution nozzle 11.

[0134] The rinse liquid nozzle 12 is connected to a rinse liquid pipe 46 that guides the rinse liquid to the rinse liquid nozzle 12. The rinse liquid pipe 46 is provided with a rinse liquid valve 56 that opens and closes the rinse liquid pipe 46. When the rinse liquid valve 56 is opened, a continuous flow of rinse liquid is discharged from the rinse liquid nozzle 12.

[0135] <Substrate Processing Using Wet Processing Unit According to Modification> When the wet processing unit 2W has the configuration shown in Fig. 7, the following substrate processing can be performed. Figs. 8A to 8D are schematic views for explaining the state of the first peripheral portion 110 of the first main surface W1 of the substrate W during substrate processing performed using the wet processing unit 2W according to the modified example.

[0136] The substrate processing shown in FIGS. 8A to 8D differs from the substrate processing shown in FIGS. 5 to 6D mainly in that in the protective film forming step, a polymer film 100 is formed as a protective film over the entire first main surface W1 of the substrate W.

[0137] The following description will focus on the differences between the substrate processing shown in Figures 8A to 8D and the substrate processing shown in Figures 5 to 6D. For example, the rotation speed during substrate processing is the same as that shown in Figures 5 to 6D, and therefore will not be mentioned.

[0138] Specifically, after the substrate W is transferred from the second transport robot CR to the spin chuck 5, the first nozzle driving mechanism 27 moves the protective film formation liquid nozzle 8 to the central position. With the protective film formation liquid nozzle 8 in the central position, the protective film formation liquid valve 50 is opened. As a result, as shown in FIG. 8A , the protective film formation liquid is supplied (discharged) from the protective film formation liquid nozzle 8 toward the center CP of the first main surface W1 of the rotating substrate W (protective film formation liquid supply step, protective film formation liquid discharge step).

[0139] The protective film formation liquid discharged from the protective film formation liquid nozzle 8 lands on the center CP of the first main surface W1 of the substrate W. The protective film formation liquid on the substrate W spreads radially toward the outer circumferential edge E of the substrate W due to centrifugal force caused by the rotation of the substrate W. As a result, substantially the entire first main surface W1 of the substrate W is covered with the protective film formation liquid (coating process). More specifically, the inner region 114 and the first peripheral edge portion 110 are covered with the protective film formation liquid.

[0140] After the discharge of the protective film formation liquid has stopped, the rotation of the substrate W continues, causing a portion of the protective film formation liquid on the substrate W to splash out of the substrate W from the outer peripheral edge E of the substrate W. This thins the liquid film of the protective film formation liquid on the substrate W (spin-off process, thinning process). After the protective film formation liquid valve 50 is closed, the first nozzle driving mechanism 27 moves the protective film formation liquid nozzle 8 to the retracted position.

[0141] The centrifugal force caused by the rotation of the substrate W promotes evaporation (volatilization) of the solvent from the protective film formation liquid on the substrate W, and a polymer film 100 is formed as shown in Fig. 8B (evaporation formation process). The polymer film 100 covers substantially the entire first main surface W1 of the substrate W and has a circular shape. More specifically, the polymer film 100 covers the inner region 114 and the first peripheral edge portion 110.

[0142] After the polymer film 100 is formed, an etching step (step S3) is performed. In this etching step in the substrate processing, with the polymer film 100 (protective film) formed on the first peripheral edge portion 110 of the first main surface W1, an etching liquid is supplied to both the first main surface W1 and the second main surface W2, thereby etching the outer circumferential edge E.

[0143] Specifically, the third nozzle driving mechanism 29 positions the etching liquid nozzle 11 at the central position. With the etching liquid nozzle 11 positioned at the central position, the etching liquid valve 55 is opened. This causes the etching liquid to be discharged from the etching liquid nozzle 11 toward the center CP of the first main surface W1 of the substrate W (second etching liquid supply step, second chemical liquid discharge step). The etching liquid nozzle 11 is an example of a second chemical liquid supply member. The etching liquid discharged from the etching liquid nozzle 11 lands on the center CP of the first main surface W1.

[0144] The etching liquid on the first main surface W1 spreads radially toward the outer circumferential edge E of the substrate W due to centrifugal force caused by the rotation of the substrate W. The etching liquid is scattered from the outer circumferential edge E of the substrate W due to centrifugal force.

[0145] The lower etching liquid valve 53 is opened almost simultaneously with the timing at which the etching liquid valve 55 is opened. As a result, the etching liquid is discharged from the lower processing liquid nozzle 10 toward the second peripheral portion 111 of the second main surface W2 of the substrate W (first etching liquid supply step, first chemical liquid discharge step). The etching liquid discharged from the lower processing liquid nozzle 10 lands on the second peripheral portion 111.

[0146] The etching liquid on the second main surface W2 moves toward the outer circumferential edge E of the substrate W due to centrifugal force caused by the rotation of the substrate W. The etching liquid is scattered from the outer circumferential edge E of the substrate W due to the centrifugal force.

[0147] In this manner, with the polymer film 100 formed on the first peripheral edge portion 110, an etching liquid is supplied to the second main surface W2, and the outer circumferential edge E is treated with the etching liquid (first etching liquid supplying step, first chemical liquid supplying step). Then, while the chemical liquid is being supplied to the second main surface W2 in the first etching liquid supplying step, the etching liquid is supplied toward the surface of the polymer film 100 (second etching liquid supplying step, second chemical liquid supplying step).

[0148] As shown in FIG. 8C, by supplying the etching liquid to both the first main surface W1 and the second main surface W2, the etching liquid can be supplied to the outer circumferential edge E of the substrate W with high reliability.

[0149] Next, a rinsing step (step S4) is performed in which a rinsing liquid is supplied to the second main surface W2 to remove the etching liquid from the substrate W. In the rinsing step, the rinsing liquid is also supplied to both the first main surface W1 and the second main surface W2 of the substrate W.

[0150] Specifically, closing the etching solution valve 55 stops the discharge of the etching solution from the etching solution nozzle 11. In a state in which the discharge of the etching solution from the etching solution nozzle 11 is stopped, the third nozzle driving mechanism 29 moves the etching solution nozzle 11 to the retracted position.

[0151] The lower etching liquid valve 53 is closed almost simultaneously with the timing at which the etching liquid valve 55 is closed, thereby stopping the discharge of the etching liquid from the lower processing liquid nozzle 10.

[0152] Meanwhile, the fourth nozzle driving mechanism 30 moves the rinse liquid nozzle 12 to the central position. With the supply of the etching liquid to the substrate W stopped and the rinse liquid nozzle 12 positioned at the central position, the rinse liquid valve 56 is opened. As a result, the rinse liquid is discharged from the rinse liquid nozzle 12 toward the center CP of the first main surface W1 of the substrate W (second rinse liquid discharge step). The rinse liquid discharged from the rinse liquid nozzle 12 lands on the center CP of the first main surface W1.

[0153] The rinse liquid on the first main surface W1 spreads radially toward the outer circumferential edge E of the substrate W due to centrifugal force caused by the rotation of the substrate W. The rinse liquid is scattered from the outer circumferential edge E of the substrate W due to centrifugal force.

[0154] The lower rinse liquid valve 54 is opened almost simultaneously with the timing at which the rinse liquid valve 56 is opened. As a result, the rinse liquid is discharged from the lower processing liquid nozzle 10 toward the second peripheral portion 111 of the second main surface W2 (first rinse liquid discharge step). The rinse liquid discharged from the lower processing liquid nozzle 10 lands on the second peripheral portion 111.

[0155] The rinse liquid on the second main surface W2 spreads toward the outer circumferential edge E of the substrate W due to centrifugal force caused by the rotation of the substrate W. The rinse liquid is scattered from the outer circumferential edge E of the substrate W due to centrifugal force.

[0156] 8D , by supplying the rinse liquid to both the first main surface W1 and the second main surface W2, the etching liquid adhering to the outer peripheral edge E and the second main surface W2 of the polymer film 100 is removed together with the rinse liquid to the outside of the substrate W. As a result, the etching liquid is removed from the outer peripheral edge E of the substrate W.

[0157] In this manner, with polymer film 100 formed on first peripheral edge portion 110, a rinse liquid is supplied to second main surface W2 to remove the etching liquid from outer peripheral edge E (first rinse liquid supplying step). Then, while the rinse liquid is being supplied to second main surface W2 in the first rinse liquid supplying step, a rinse liquid is supplied toward the surface of polymer film 100 (second rinse liquid supplying step).

[0158] Next, a polymer film removing step (step S5) is performed in which a remover is supplied toward the first main surface W1 of the substrate W to remove the polymer film 100 from the first peripheral edge portion 110 of the first main surface W1.

[0159] Specifically, the second nozzle driving mechanism 28 moves the removing liquid nozzle 9 to the central position. With the removing liquid nozzle 9 in the central position, the removing liquid valve 51 is opened. As a result, the removing liquid is supplied (discharged) from the removing liquid nozzle 9 toward the center CP of the first main surface W1 of the substrate W (removing liquid supplying step, removing liquid discharging step).

[0160] The removing liquid discharged from the removing liquid nozzle 9 lands on the center CP of the first main surface W1 of the substrate W. The removing liquid on the first main surface W1 spreads radially toward the outer circumferential edge E of the substrate W due to centrifugal force caused by the rotation of the substrate W, and is scattered from the outer circumferential edge E of the substrate W.

[0161] The polymer film 100 is dissolved in the removing liquid and is discharged from the first main surface W1 together with the removing liquid having the polymer film 100 dissolved therein. It is not necessary for the entire polymer film 100 to be dissolved in the removing liquid, and a portion of the polymer film 100 may be peeled off from the upper surface of the substrate W by the liquid flow of the removing liquid and discharged outside the substrate W.

[0162] Thereafter, a spin dry step (step S6) and an unloading step (step S7) are performed, and the substrate processing is completed.

[0163] In the substrate processing according to the modified example, while the etching liquid is being supplied to the second main surface W2, the etching liquid is supplied toward the surface of the polymer film 100. Particles and the like adhering to the surface of the polymer film 100 can be washed away by the etching liquid. Therefore, when the polymer film 100 is removed in the protective film removal step, contamination of the first main surface W1 by particles and the like adhering to the polymer film 100 can be suppressed.

[0164] <Substrate Processing Apparatus According to Second Embodiment> Fig. 9 is a plan view for explaining a configuration example of a substrate processing apparatus 1A according to a second embodiment of the present invention. In Fig. 10, components equivalent to those shown in Figs. 1 to 8D described above are given the same reference numerals as in Fig. 1, etc., and descriptions thereof will be omitted. The same applies to Figs. 10 to 12C described below.

[0165] The substrate processing apparatus 1A according to the second embodiment differs from the substrate processing apparatus 1 according to the first embodiment mainly in that a hydrophobizing liquid is used as the protective film formation liquid and that the multiple processing units 2 include multiple dry processing units 2D. In this embodiment, the protective film formation liquid nozzle 8 also functions as a hydrophobizing liquid nozzle.

[0166] The hydrophobizing liquid used as the protective film forming liquid is a liquid that alters (e.g., methylates) the underlying outermost layer 113 of the substrate W to increase the contact angle of the top surface of the substrate W with pure water. By hydrophobizing, the contact angle of the first main surface W1 of the substrate W increases to, for example, 90° or more. The hydrophobizing liquid is also called a water-repellent liquid because it can suppress adhesion of water.

[0167] The hydrophobizing liquid may be, for example, a silicon-based hydrophobizing liquid that hydrophobizes silicon itself and compounds containing silicon, or a metal-based hydrophobizing liquid that hydrophobizes metal itself and compounds containing metal.

[0168] The metal-based hydrophobizing liquid contains, for example, at least one of an amine having a hydrophobic group and an organic silicon compound.

[0169] The silicon-based hydrophobizing liquid is, for example, a silane coupling agent, which contains at least one of HMDS (hexamethyldisilazane), TMS (tetramethylsilane), fluorinated alkylchlorosilane, alkyldisilazane, and a non-chloro-based hydrophobizing agent.

[0170] The non-chlorinated hydrophobizing liquid contains, for example, at least one of dimethylsilyldimethylamine, dimethylsilyldiethylamine, hexamethyldisilazane, tetramethyldisilazane, bis(dimethylamino)dimethylsilane, N,N-dimethylaminotrimethylsilane, N-(trimethylsilyl)dimethylamine, and an organosilane compound.

[0171] 9, the two processing towers TW on the first transport robot IR side are made up of a plurality of wet processing units 2W, and the two processing towers TW on the opposite side of the first transport robot IR are made up of a plurality of dry processing units 2D. The dry processing units 2D are disposed in the chamber 4 and include light irradiation chambers 71 in which the substrates W are irradiated with light.

[0172] <Dry processing unit configuration> FIG. 10 is a schematic diagram for explaining the configuration of the dry processing unit 2D according to the second embodiment.

[0173] The light irradiation processing unit 70 includes a base 72 having a mounting surface 72a on which a substrate W is placed, a light emitting member 73 that emits light such as ultraviolet light toward the upper surface of the substrate W placed on the mounting surface 72a, a plurality of lift pins 75 that penetrate the base 72 and move up and down, and a pin driving mechanism 76 that moves the plurality of lift pins 75 in the up and down direction. The light irradiation chamber 71 houses the base 72.

[0174] A loading / unloading port 71a for the substrate W is provided on a side wall of the light irradiation chamber 71, and the light irradiation chamber 71 has a gate valve 71b that opens and closes the loading / unloading port 71a. When the loading / unloading port 71a is open, a second transport robot CR (not shown) can access the light irradiation chamber 71. The substrate W is placed on the base 72 and held horizontally in a predetermined second processing position. In this embodiment, the second processing position is the position of the substrate W shown in FIG. 10, for example, a horizontal position.

[0175] The light emitting member 73 includes a light source such as a plurality of light irradiation lamps. The light irradiation lamps are, for example, xenon lamps, mercury lamps, deuterium lamps, etc. The light emitting member 73 is configured to irradiate ultraviolet light of, for example, 1 nm or more and 400 nm or less, preferably 1 nm or more and 300 nm or less. Specifically, a current-carrying unit 74 such as a power supply is connected to the light emitting member 73, and when power is supplied from the current-carrying unit 74, the light emitting member 73 emits light.

[0176] The plurality of lift pins 75 are inserted into a plurality of through-holes that penetrate the base 72 and the light irradiation chamber 71. The plurality of lift pins 75 are moved up and down by a pin drive mechanism 76 between an upper position (position shown by a two-dot chain line in FIG. 10) where they support the substrate W above the mounting surface 72a, and a lower position (position shown by a solid line in FIG. 10) where their tips (upper ends) are recessed below the mounting surface 72a. The pin drive mechanism 76 may include an electric motor or an air cylinder, or may include an actuator other than these.

[0177] <Substrate Processing According to Second Embodiment> Fig. 11 is a flowchart for explaining substrate processing performed by the substrate processing apparatus 1A according to the second embodiment. Fig. 12A and Fig. 12B are schematic views for explaining the state of the first peripheral edge portion 110 of the first main surface W1 of the substrate W during the substrate processing according to the second embodiment.

[0178] In the substrate processing according to the second embodiment, for example, as shown in FIG. 11, a first loading process (step S10), a protective film forming process (step S11), an etching process (step S12), a rinsing process (step S13), a spin-drying process (step S14), a first unloading process (step S15), a second loading process (step S16), a protective film removing process (step S17), and a second unloading process (step S18) are performed.

[0179] The first loading process (step S10), protective film forming process (step S11), etching process (step S12), rinsing process (step S13), spin-drying process (step S14), and first unloading process (step S15) are similar to the loading process (step S1), protective film forming process (step S2), etching process (step S3), rinsing process (step S4), spin-drying process (step S6), and unloading process (step S7), respectively, of the substrate processing according to the first embodiment (see FIG. 5).

[0180] Therefore, the following mainly describes the steps that are different from, for example, the substrate processing according to the first embodiment. The rotation speed during the substrate processing is the same as that in the substrate processing shown in FIGS. 5 to 6D, and therefore will not be mentioned.

[0181] Protective film formation process (step S 12A, a protective film forming liquid is supplied to a first peripheral portion 110 of a first main surface W1 of a substrate W, thereby modifying an underlying outermost layer 113 in the first peripheral portion 110 to form a hydrophobic film 105 as a protective film. The protective film is not formed by evaporating a solvent from a liquid film on the first main surface W1, but by modifying (hydrophobizing) the underlying outermost layer 113, the hydrophobic film 105 as a protective film is formed (hydrophobic film forming step). The hydrophobic film 105 is also called a water-repellent film.

[0182] In the subsequent etching step (step S12), as shown in FIG. 12B, the underlying outermost layer 113 exposed from the surface of the outer circumferential end E can be etched without removing the hydrophobic film 105.

[0183] The etching liquid does not reach the inner peripheral edge 105a of the hydrophobic film 105 in the first peripheral portion 110 of the first main surface W1, and remains outside the inner peripheral edge 105a. The inner peripheral edge 105a of the hydrophobic film 105 is located inside the position (inner peripheral edge 101 of the etching liquid) that the etching liquid reaches in the first peripheral portion 110 of the first main surface W1.

[0184] 12C, in the rinsing step (step S13) after the etching step (step S12), the etching liquid adhering to the polymer film 100, the outer peripheral edge E, and the second main surface W2 is removed together with the rinsing liquid from the substrate W. As a result, the etching liquid is removed from the outer peripheral edge E of the substrate W.

[0185] The rinse liquid does not reach the inner circumferential edge 105a of the hydrophobic film 105 in the first peripheral portion 110 of the first main surface W1, but remains outside the inner circumferential edge 105a. The inner circumferential edge 105a of the hydrophobic film 105 is located inside the position where the rinse liquid reaches (the inner circumferential edge 102 of the rinse liquid).

[0186] After the substrate W is dried in the spin dry step (step S14), the substrate W is carried out from the wet processing unit 2W by the second transport robot CR (first carrying-out step: step S15).

[0187] After the first unloading step (step S15), the substrate W is loaded into the dry processing unit 2D by the second transport robot CR and handed over to the plurality of lift pins 75 (second loading step: step S16). Thereafter, the pin driving mechanism 76 moves the plurality of lift pins 75 to a lower position, thereby placing the substrate W on the placement surface 72a of the base 72. At this time, the substrate W is placed on the placement surface 72a so that the first main surface W1 faces up.

[0188] With the substrate W placed on the placement surface 72a, power is supplied from the power supply unit 74 to the light output member 73, causing the light L to be output from the light output member 73 (light output step). The light L output from the light output member 73 is irradiated onto the first main surface W1 (light irradiation step). The hydrophobic film 105 serving as a protective film is removed by the light irradiation (hydrophobic film removal step, protective film removal step: step S17). More specifically, the hydrophobic film 105 is altered (made hydrophilic) by the light irradiation, and returns to the outermost base layer 113. In this way, the hydrophobic film 105 is removed after the first chemical liquid supply step. The light output member 73 is an example of a protective film removal unit.

[0189] After the hydrophobic film 105 is removed, the pin drive mechanism 76 moves the plurality of lift pins 75 to an upper position, causing the plurality of lift pins 75 to lift the substrate W from the mounting surface 72a of the base 72. The second transport robot CR receives the substrate W from the plurality of lift pins 75 and unloads the substrate W from the dry processing unit 2D (second unloading step: step S18). The substrate W is handed over from the second transport robot CR to the first transport robot IR, and is stored in the carrier C by the first transport robot IR.

[0190] According to the second embodiment, the same effects as those of the first embodiment are achieved.

[0191] <Other embodiments> The present invention is not limited to the above-described embodiment, and can be embodied in other forms.

[0192] (1) A plurality of lower processing liquid nozzles 10 may be provided along the circumferential direction of the spin base 20. By ejecting the processing liquid from the plurality of lower processing liquid nozzles 10 toward the lower surface of the substrate W, the processing liquid can be supplied evenly to the lower surface of the substrate W over the entire circumferential direction.

[0193] (2) In the above-described embodiment, the hydrophobic film 105 is made hydrophilic by light irradiation. The hydrophobic film 105 may also be made hydrophilic by a process other than light irradiation. For example, the hydrophobic film 105 may be made hydrophilic by supplying a liquid to the hydrophobic film 105. Alternatively, the hydrophobic film 105 may be made hydrophilic by applying a hydrophilizing gas such as ozone gas to the hydrophobic film 105. The hydrophobic film 105 may also be made hydrophilic by irradiating the first main surface W1 with light while supplying the hydrophilizing gas to the hydrophobic film 105.

[0194] (3) In the above-described embodiment, the polymer film 100 is removed by supplying a removal liquid. However, the polymer film 100 may be removed by a process other than supplying a removal liquid. For example, the polymer film 100 may be removed by light irradiation or by a gaseous removal agent.

[0195] The polymer film 100 may also be removed from the first peripheral edge portion 110 of the first main surface W1 by decomposing or rearranging the polymer.

[0196] (4) The wet processing unit 2W according to the modification of Fig. 7 can also be applied to the substrate processing apparatus 1A according to the second embodiment. By doing so, a hydrophobic film 105 can be formed on the entire upper surface of the substrate W, and substrate processing can be performed in which an etching liquid is supplied to both the upper and lower surfaces of the substrate W.

[0197] Furthermore, the protective film formation speed (first speed) does not necessarily have to be higher than the rotation speed (second speed) of the substrate W during spin drying, and the etching rotation speed (third speed) does not necessarily have to be higher than the protective film formation speed (first speed). However, as in the above-described embodiment, if the first speed is higher than the second speed and the third speed, it is easier to prevent the protective film formation liquid on the first main surface W1 from reaching the second peripheral portion 111, compared to when the first speed is equal to or lower than the second speed and the third speed.

[0198] (5) The first and second processing positions do not necessarily have to be horizontal positions. That is, the first and second processing positions may be held vertically, or the main surface of the substrate W may be inclined relative to the horizontal plane.

[0199] Furthermore, the substrate W may be held so that the first main surface W1 of the substrate W faces downward. That is, unlike the substrate processing according to each of the above-described embodiments, processing may be performed on the lower surface of the substrate W. Specifically, the substrate processing apparatus may be configured to form a protective film on the peripheral portion of the lower surface of the substrate W, and to perform substrate processing in which the peripheral portion of the upper surface of the substrate W and the outer peripheral edge E of the substrate W are processed with an etching solution.

[0200] (6) In each of the above-described embodiments, the substrate is processed by etching. However, the substrate may be processed by a process other than etching, or may be processed by a chemical other than an etching solution.

[0201] (7) In each of the above-described embodiments, a plurality of processing liquids are respectively ejected from a plurality of upper processing liquid nozzles. However, the manner in which the processing liquids are ejected is not limited to the above-described embodiments. For example, unlike the above-described embodiments, the processing liquids may be ejected from fixed nozzles whose positions are fixed within the chamber 4, or all of the processing liquids may be ejected from a single nozzle toward the top surface of the substrate W.

[0202] Furthermore, a plurality of upper processing liquid nozzles may be configured to be moved as a unit by a single nozzle driving mechanism.

[0203] Furthermore, although the above-described embodiments have exemplified nozzles as members for discharging the treatment liquid, the members for discharging the treatment liquid are not limited to nozzles. In other words, the members for discharging the treatment liquid may be any members that function as treatment liquid discharging members when discharging the treatment liquid.

[0204] (8) In the above-described embodiment, a continuous flow of the protective film formation liquid is supplied to the upper surface of the substrate W, and the protective film formation liquid is spread by centrifugal force to form the polymer film 100 or the hydrophobic film 105. However, the method of supplying the protective film formation liquid is not limited thereto.

[0205] For example, the protective film forming liquid nozzle 8 may be moved in a direction along the upper surface of the substrate W while supplying the protective film forming liquid to the upper surface of the substrate W. Also, unlike the above-described embodiment, when forming the polymer film 100, the protective film forming liquid on the substrate W may be heated to promote evaporation of the solvent and thereby promote formation of the polymer film 100.

[0206] Furthermore, unlike the above-described embodiment, the polymer film 100 or the hydrophobic film 105 may be formed on the upper surface of the substrate W by applying a protective film formation liquid to the upper surface of the substrate W. Specifically, the protective film formation liquid may be applied to the upper surface of the substrate W by moving a bar-shaped application member having the protective film formation liquid adhered to its surface along the upper surface of the substrate W while contacting the upper surface of the substrate W.

[0207] (9) Unlike the first embodiment described above, the wet processing unit 2W may be provided with a light output member 73. In this case, it is preferable that the light source of the light output member 73 is disposed outside the chamber 4. For example, the light source may be disposed outside the chamber 4, and the tip of an optical fiber (not shown) that transmits light L emitted from the light source may be disposed inside the chamber 4. In this case, the hydrophobic film removal step can be performed without providing a dry processing unit 2D.

[0208] (10) In each of the above-described embodiments, the spin chuck 5 is an adsorption-type spin chuck that adsorbs the substrate W to the spin base 20. The spin chuck 5 is not limited to an adsorption-type spin chuck. For example, the spin chuck 5 may be a gripping-type spin chuck that grips the outer peripheral edge E of the substrate W with a plurality of gripping pins (not shown). When a gripping-type spin chuck is used, it is preferable to switch the grip of the substrate W between a first group of a plurality of gripping pins and a second group of a plurality of gripping pins when supplying a processing liquid to the substrate W.

[0209] When the gripping-type spin chuck 5 is employed, it is possible to provide a lower processing liquid nozzle facing the center of the lower surface of the substrate W. Therefore, the processing liquid can be discharged toward the center of the lower surface of the substrate W.

[0210] (11) In each of the above-described embodiments, some of the pipes, pumps, valves, actuators, etc. are omitted from the illustrations. However, this does not mean that these components do not exist; in reality, these components are provided in appropriate positions.

[0211] (12) In each of the above-described embodiments, the controller 3 controls the entire substrate processing apparatus 1. However, the controllers controlling the components of the substrate processing apparatus 1 may be distributed across multiple locations. Furthermore, the controller 3 does not need to directly control each component, and signals output from the controller 3 may be received by a slave controller that controls each component of the substrate processing apparatus 1.

[0212] (13) In the above-described embodiments, the substrate processing apparatus 1, 1A includes a transport robot (first transport robot IR and second transport robot CR), a plurality of processing units 2, and a controller 3. However, the substrate processing apparatus 1, 1A may be configured with a single processing unit 2 and a controller 3 and may not include a transport robot. Alternatively, the substrate processing apparatus 1, 1A may be configured with only a single processing unit 2. In other words, the processing unit 2 may be an example of a substrate processing apparatus.

[0213] (14) In the above embodiment, expressions such as "along," "horizontal," "vertical," and "cylindrical" are used, but they do not necessarily have to be "along," "horizontal," "vertical," and "cylindrical" in a strict sense. In other words, these expressions allow for deviations in manufacturing precision, installation precision, etc.

[0214] (15) Furthermore, although each component may be shown as a schematic block, the shape, size, and positional relationship of each block do not represent the shape, size, and positional relationship of each component.

[0215] In addition, various modifications can be made within the scope of the claims. [Explanation of symbols]

[0216] 1: Substrate processing equipment 1A: Substrate processing equipment 8: Protective film forming liquid nozzle (protective film forming member) 9: Removal liquid nozzle (protective film removal unit) 10: Lower processing liquid nozzle (chemical liquid supply member) 11: Etching solution nozzle (chemical solution supply member) 62: Light emitting member (protective film removing unit) 100: Polymer film (protective film) 100a: Inner edge 105: Hydrophobic film (protective film) 105a: Inner edge 110: First peripheral portion 111: Second peripheral portion A1: Rotation axis CP: Center W: Substrate W1: First main surface W2: Second main surface

Claims

1. 1. A substrate processing method for processing a substrate having a first main surface having a first peripheral edge portion, a second main surface opposite to the first main surface and having a second peripheral edge portion, and an outer circumferential edge connecting the first peripheral edge portion and the second peripheral edge portion, comprising: a protective film forming step of supplying a protective film forming liquid to the first main surface to form a protective film on the first peripheral edge portion so that the outer circumferential edge is exposed; a first chemical solution supplying step of supplying a chemical solution to the second main surface while the protective film is formed on the first peripheral edge portion, allowing the chemical solution to reach the outer peripheral edge exposed from the protective film, and treating the outer peripheral edge with the chemical solution; a protective film removing step of removing the protective film after the first chemical solution supplying step, the first main surface is a device surface on which a device having a concave-convex pattern is formed, the second main surface is a non-device surface on which no devices are formed, The substrate processing method, wherein the substrate is a semiconductor wafer having the device surface and the non-device surface.

2. the protective film forming step includes a high-speed rotation step of rotating the substrate at a first speed around a rotation axis passing through a center of the first main surface in a state where the protective film forming liquid is attached to the first main surface, 2. The substrate processing method according to claim 1, further comprising, after the first chemical liquid supplying step, a spin drying step of drying the substrate by rotating the substrate at a second speed lower than the first speed.

3. 3. The substrate processing method according to claim 2, wherein the first chemical liquid supplying step includes a low-speed rotation step of rotating the substrate at a third speed that is slower than the first speed and the second speed while supplying the chemical liquid to the second main surface.

4. 4. The substrate processing method according to claim 1, wherein the protective film removing step includes a removing liquid supplying step of supplying a removing liquid for removing the protective film onto the first main surface.

5. 4. The substrate processing method according to claim 1, wherein the protective film removing step includes a light irradiation step of irradiating the first main surface with light.

6. 6. The substrate processing method according to claim 1, wherein the protective film forming step includes a step of forming the protective film on the first peripheral edge portion so that an inner region adjacent to the first peripheral edge portion on the first main surface is exposed.

7. the first chemical liquid supplying step includes a step of causing a chemical liquid to reach the first peripheral edge portion from the second main surface via the outer peripheral end, 7. The substrate processing method according to claim 6, wherein an inner peripheral edge of the protective film formed in the protective film forming step is located inside a position at the first peripheral edge portion of the first main surface where a chemical solution reaches.

8. 6. The substrate processing method according to claim 1, wherein the protective film forming step includes the step of forming the protective film over the entire first main surface.

9. A substrate processing method for processing a substrate having a first main surface having a first peripheral edge portion, a second main surface opposite to the first main surface and having a second peripheral edge portion, and an outer peripheral edge connecting the first peripheral edge portion and the second peripheral edge portion, comprising: a protective film forming step of supplying a protective film forming liquid to the first main surface to form a protective film on the entire first main surface including the first peripheral edge portion; a first chemical solution supplying step of supplying a chemical solution to the second main surface and treating the outer peripheral edge with the chemical solution while the protective film is formed on the first peripheral edge portion; a protective film removing step of removing the protective film after the first chemical solution supplying step; a second chemical liquid supplying step of supplying a chemical liquid toward a surface of the protective film while the chemical liquid is being supplied to the second main surface in the first chemical liquid supplying step.

10. 10. The substrate processing method according to claim 1, wherein the protective film forming step includes a polymer film forming step of forming a polymer film containing a polymer as the protective film by supplying a polymer-containing liquid containing a polymer to the first main surface as the protective film forming liquid.

11. A substrate processing method for processing a substrate having a first main surface having a first peripheral edge portion, a second main surface opposite to the first main surface and having a second peripheral edge portion, and an outer peripheral edge connecting the first peripheral edge portion and the second peripheral edge portion, comprising: a protective film forming step of supplying a protective film forming liquid to the first main surface to form a protective film on the first peripheral edge portion; a first chemical solution supplying step of supplying a chemical solution to the second main surface and treating the outer peripheral edge with the chemical solution while the protective film is formed on the first peripheral edge portion; a protective film removing step of removing the protective film after the first chemical solution supplying step, The substrate processing method, wherein the protective film forming step includes a hydrophobic film forming step of supplying a hydrophobizing liquid as the protective film forming liquid to the first main surface to form a hydrophobic film as the protective film.

12. 1. A substrate processing apparatus for processing a substrate having a first main surface having a first peripheral edge portion, a second main surface opposite to the first main surface and having a second peripheral edge portion, and an outer circumferential edge connecting the first peripheral edge portion and the second peripheral edge portion, a protective film forming member that supplies a protective film forming liquid to the first main surface to form a protective film on the first peripheral edge portion so that the outer circumferential edge is exposed; a chemical solution supplying member that supplies a chemical solution to the second main surface while the protective film is formed on the first peripheral edge portion, thereby treating the second main surface with the chemical solution, and that allows the chemical solution to reach the outer peripheral edge exposed from the protective film, thereby treating the outer peripheral edge with the chemical solution; a protective film removing unit for removing the protective film, the first main surface is a device surface on which a device having a concave-convex pattern is formed, the second main surface is a non-device surface on which no devices are formed, The substrate processing apparatus, wherein the substrate is a semiconductor wafer having the device surface and the non-device surface.

13. A substrate processing method for processing a substrate having a first main surface having a first peripheral edge portion, a second main surface opposite to the first main surface and having a second peripheral edge portion, and an outer peripheral edge connecting the first peripheral edge portion and the second peripheral edge portion, comprising: a protective film forming step of supplying a protective film forming liquid to the first main surface to form a protective film on the first peripheral edge portion so that a region of a predetermined width is exposed from an end of the outer circumferential edge; a first chemical solution supplying step of supplying a chemical solution to the second main surface while the protective film is formed on the first peripheral edge portion, allowing the chemical solution to reach a region of a predetermined width from the end of the outer peripheral edge exposed from the protective film, and treating the region of a predetermined width from the end of the outer peripheral edge exposed from the protective film with the chemical solution; a protective film removing step of removing the protective film after the first chemical solution supplying step, the first main surface is a device surface on which a device having a concave-convex pattern is formed, the second main surface is a non-device surface on which no devices are formed, The substrate processing method, wherein the substrate is a semiconductor wafer having the device surface and the non-device surface.

14. A substrate processing apparatus for processing a substrate having a first main surface having a first peripheral edge portion, a second main surface opposite to the first main surface and having a second peripheral edge portion, and an outer peripheral edge connecting the first peripheral edge portion and the second peripheral edge portion, a protective film forming member that supplies a protective film forming liquid to the first main surface and forms a protective film on the first peripheral edge portion so that a region of a predetermined width is exposed from an end of the outer circumferential edge; a chemical solution supplying member that supplies a chemical solution to the second main surface while the protective film is formed on the first peripheral edge portion, thereby treating the second main surface with the chemical solution, and that allows the chemical solution to reach a region of a predetermined width from the end of the outer peripheral edge that is exposed from the protective film, thereby treating the region of the predetermined width from the end of the outer peripheral edge that is exposed from the protective film, with the chemical solution; a protective film removing unit for removing the protective film, the first main surface is a device surface on which a device having a concave-convex pattern is formed, the second main surface is a non-device surface on which no devices are formed, The substrate processing apparatus, wherein the substrate is a semiconductor wafer having the device surface and the non-device surface.

15. A substrate processing method for processing a substrate having a first main surface having a first peripheral edge portion, a second main surface opposite to the first main surface and having a second peripheral edge portion, and an outer peripheral edge connecting the first peripheral edge portion and the second peripheral edge portion, comprising: a protective film forming step of supplying a protective film forming liquid to the first main surface to form a protective film on the first peripheral edge portion so that the outer circumferential edge is exposed; a first chemical solution supplying step of supplying a chemical solution to the second main surface while the protective film is formed on the first peripheral edge portion, allowing the chemical solution to reach the outer peripheral edge exposed from the protective film, and treating the outer peripheral edge with the chemical solution; a protective film removing step of removing the protective film after the first chemical solution supplying step; and performing a dry etching process on the first main surface after the protective film removing process.

Images