Substrate processing apparatus and substrate processing method

Abstract

To identify a processing liquid in a chamber with high precision.SOLUTION: A substrate processing device (100) includes: a chamber (112); a substrate holder (120) that holds a substrate (W) in the chamber (112) and rotates the substrate (W); a processing liquid supply unit (130) that supplies a processing liquid to an upper surface (Wt) of the substrate (W); a near-infrared light source (140) that irradiates the inside of the chamber (112) with near-infrared light; a near-infrared imaging unit (150) that generates a captured image obtained by capturing an image of the processing liquid in the chamber (112) irradiated with the near-infrared light from the near-infrared light source (140); and a control unit (102) that identifies an outer edge of the processing liquid in the chamber (112) on the basis of the captured image.SELECTED DRAWING: Figure 2

Description

[Technical Field]

[0001] The present invention relates to a substrate processing apparatus and a substrate processing method. [Background technology]

[0002] 2. Description of the Related Art Substrate processing apparatuses are known that process substrates. Substrate processing apparatuses are suitable for processing semiconductor substrates. Typically, substrate processing apparatuses process substrates using a processing liquid.

[0003] A substrate drying method that suppresses particles from remaining on the periphery of a substrate during cleaning and drying has been studied (Patent Document 1). Patent Document 1 describes that when drying a rinse liquid on a substrate, a CCD camera is used to measure interference fringes arising from a thin film of the rinse liquid, and the thickness of the rinse liquid is measured from changes in the interference fringes. [Prior art documents] [Patent documents]

[0004] [Patent Document 1] Japanese Patent Application Laid-Open No. 2004-335542 Summary of the Invention [Problem to be solved by the invention]

[0005] Generally, processing liquids used in substrate processing are transparent, so a typical CCD camera cannot detect the processing liquid on the substrate. For this reason, the substrate drying method of Patent Document 1 uses a CCD camera to measure interference fringes. However, the substrate drying method of Patent Document 1 may not be able to identify the processing liquid in the chamber with high accuracy.

[0006] The present invention has been made in view of the above-mentioned problems, and an object of the present invention is to provide a substrate processing apparatus and a substrate processing method that are capable of identifying the processing liquid in a chamber with high accuracy. [Means for solving the problem]

[0007] According to one aspect of the present invention, a substrate processing apparatus includes a chamber, a substrate holding unit that holds a substrate within the chamber and rotates the substrate, a processing liquid supply unit that supplies a processing liquid to an upper surface of the substrate, a near-infrared light source that irradiates the inside of the chamber with near-infrared rays, a near-infrared imaging unit that generates an image of the processing liquid within the chamber irradiated with the near-infrared rays from the near-infrared light source, and a control unit that identifies the outer edge of the processing liquid within the chamber based on the image.

[0008] In one embodiment, the control unit identifies the type of the treatment liquid based on the captured image.

[0009] In one embodiment, the near-infrared imaging unit captures an image of the processing liquid supplied from the processing liquid supply unit to the upper surface of the substrate.

[0010] In one embodiment, the control unit determines whether the processing liquid covers the entire top surface of the substrate based on the captured image.

[0011] In one embodiment, the processing liquid supply unit includes a first processing liquid supply unit that supplies a first processing liquid to the substrate, and a second processing liquid supply unit that supplies a second processing liquid to the substrate, and after the supply of the first processing liquid that was being supplied to the substrate from the first processing liquid supply unit is stopped and the supply of the second processing liquid to the substrate from the second processing liquid supply unit is started, the control unit determines whether the second processing liquid covers the entire top surface of the substrate based on the captured image.

[0012] In one embodiment, the near-infrared light source and the near-infrared image capturing unit are disposed outside the chamber.

[0013] In one embodiment, the near-infrared light source and the near-infrared image capturing unit are disposed at opposite positions across the chamber.

[0014] In one embodiment, the near-infrared light source and the near-infrared image capturing unit are disposed inside the chamber.

[0015] In one embodiment, the processing liquid supply unit includes a pipe and a nozzle, and the near-infrared imaging unit captures an image of the processing liquid located in at least one of the pipe and the nozzle.

[0016] According to another aspect of the present invention, a substrate processing method includes the steps of holding a substrate in a chamber and rotating the substrate, supplying a processing liquid to an upper surface of the substrate in the chamber, irradiating the inside of the chamber with near-infrared rays, generating an image of the processing liquid in the chamber irradiated with the near-infrared rays, and identifying an outer edge of the processing liquid in the chamber based on the image.

[0017] In one embodiment, the substrate processing method further includes a step of identifying the type of the processing liquid based on the captured image.

[0018] In one embodiment, in the step of generating the captured image, an image of the processing liquid supplied to the upper surface of the substrate is captured.

[0019] In one embodiment, the substrate processing method further includes determining whether the processing liquid covers the entire top surface of the substrate.

[0020] In one embodiment, the step of supplying the processing liquid includes a step of supplying a first processing liquid to the substrate and a step of supplying a second processing liquid to the substrate, and the substrate processing method further includes a step of stopping the supply of the first processing liquid to the substrate and then starting the supply of the second processing liquid to the substrate, and then determining, based on the captured image, whether the second processing liquid covers the entire top surface of the substrate.

[0021] In one embodiment, in the step of generating the captured image, an image of the processing liquid located in at least one of a pipe and a nozzle through which the processing liquid flows is captured. [Effects of the Invention]

[0022] According to the present invention, the processing liquid in the chamber can be identified with high accuracy. [Brief explanation of the drawings]

[0023] [Figure 1] 1 is a schematic diagram of a substrate processing apparatus according to an embodiment of the present invention; [Figure 2] 2 is a schematic view of a substrate processing unit in the substrate processing apparatus of the present embodiment. FIG. [Figure 3] 1 is a block diagram of a substrate processing apparatus according to an embodiment of the present invention; [Figure 4] FIG. 2 is a flow chart of a substrate processing method according to the present embodiment. [Figure 5] FIG. 2 is a flowchart of a substrate processing step in the substrate processing method of the present embodiment. [Figure 6] (a) is a schematic diagram of an image taken in the visible region of a substrate supplied with a processing liquid in the substrate processing apparatus of this embodiment, (b) is a schematic diagram of an image taken in the near-infrared region of a substrate supplied with a processing liquid in the substrate processing apparatus of this embodiment, and (c) is a schematic diagram of an image taken in the near-infrared region of a substrate supplied with a different processing liquid in the substrate processing apparatus of this embodiment. [Figure 7] (a) is a schematic diagram of an image taken in the near-infrared region of a substrate immediately after the supply of processing liquid has begun in the substrate processing apparatus of this embodiment, (b) is a schematic diagram of an image taken in the near-infrared region of a substrate with processing liquid spreading over its upper surface in the substrate processing apparatus of this embodiment, and (c) is a schematic diagram of an image taken in the near-infrared region of a substrate whose entire upper surface is covered with processing liquid in the substrate processing apparatus of this embodiment. [Figure 8] FIG. 2 is a flowchart of a substrate processing step in the substrate processing method of the present embodiment. [Figure 9] FIG. 2 is a flowchart of a substrate processing step in the substrate processing method of the present embodiment. [Figure 10] 2 is a schematic view of a substrate processing unit in the substrate processing apparatus of the present embodiment. FIG. [Figure 11]2 is a schematic view of a substrate processing unit in the substrate processing apparatus of the present embodiment. FIG. [Figure 12] (a) is a schematic diagram of an image taken of a substrate to which a first processing liquid is supplied in the substrate processing apparatus of this embodiment, (b) is a schematic diagram of an image taken of a substrate to which the supply of the first processing liquid has been stopped and the supply of the second processing liquid has been started in the substrate processing apparatus of this embodiment, and (c) is a schematic diagram of an image taken of a substrate to which a second processing liquid is supplied in the substrate processing apparatus of this embodiment. [Figure 13] FIG. 2 is a flowchart of a substrate processing step in the substrate processing method of the present embodiment. [Figure 14] FIG. 2 is a flowchart of a substrate processing step in the substrate processing method of the present embodiment. DETAILED DESCRIPTION OF THE INVENTION

[0024] Hereinafter, embodiments of a substrate processing apparatus and a substrate processing method according to the present invention will be described with reference to the drawings. In the drawings, identical or corresponding parts are designated by the same reference numerals, and description thereof will not be repeated. In this specification, to facilitate understanding of the invention, mutually orthogonal X-, Y-, and Z-axes may be described. Typically, the X- and Y-axes are parallel to the horizontal direction, and the Z-axis is parallel to the vertical direction.

[0025] First, a substrate processing apparatus 100 according to this embodiment will be described with reference to Fig. 1. Fig. 1 is a schematic plan view of the substrate processing apparatus 100.

[0026] 1, the substrate processing apparatus 100 processes a substrate W. The substrate processing apparatus 100 processes the substrate W by performing at least one of etching, surface treatment, property imparting, treatment film formation, removal of at least a portion of a film, and cleaning on the substrate W.

[0027] The substrate W is used as a semiconductor substrate. The substrate W includes a semiconductor wafer. For example, the substrate W has a substantially circular disk shape. Here, the substrate processing apparatus 100 processes the substrates W one by one.

[0028] 1, the substrate processing apparatus 100 includes a plurality of substrate processing units 110, a fluid cabinet 10A, a fluid box 10B, a plurality of load ports LP, an indexer robot IR, a center robot CR, and a controller 101. The controller 101 controls the load ports LP, the indexer robot IR, the center robot CR, and the substrate processing units 110.

[0029] Each load port LP accommodates a plurality of stacked substrates W. The indexer robot IR transports substrates W between the load port LP and the center robot CR. Note that a placement stage (path) on which the substrate W is temporarily placed may be provided between the indexer robot IR and the center robot CR, and the device may be configured so that the substrate W is indirectly transferred between the indexer robot IR and the center robot CR via the placement stage. The center robot CR transports substrates W between the indexer robot IR and the substrate processing units 110. Each of the substrate processing units 110 processes the substrate W by discharging a processing liquid onto the substrate W. The fluid cabinet 10A contains a processing liquid. Note that the fluid cabinet 10A may contain a gas.

[0030] The substrate processing units 110 form a plurality of towers TW (four towers TW in FIG. 1) arranged to surround the center robot CR in a plan view. Each tower TW includes vertically stacked substrate processing units 110 (three substrate processing units 110 in FIG. 1). Each fluid box 10B corresponds to a plurality of towers TW. The processing liquid in the fluid cabinet 10A is supplied to all of the substrate processing units 110 included in the tower TW corresponding to the fluid box 10B via one of the fluid boxes 10B. Furthermore, the gas in the fluid cabinet 10A is supplied to all of the substrate processing units 110 included in the tower TW corresponding to the fluid box 10B via one of the fluid boxes 10B.

[0031] The control device 101 controls various operations of the substrate processing apparatus 100. The control device 101 includes a control unit 102 and a storage unit 104. The control unit 102 has a processor. The control unit 102 has, for example, a central processing unit (CPU). Alternatively, the control unit 102 may have a general-purpose computer.

[0032] The storage unit 104 includes a main storage device and an auxiliary storage device. The main storage device is, for example, a semiconductor memory. The auxiliary storage device is, for example, a semiconductor memory and / or a hard disk drive. The storage unit 104 may include removable media. The control unit 102 executes computer programs stored in the storage unit 104 to perform substrate processing operations.

[0033] The storage unit 104 stores data. The data includes recipe data. The recipe data includes information indicating a plurality of recipes. Each of the plurality of recipes defines the processing content and processing procedure for the substrate W.

[0034] The storage unit 104 may also store the brightness value of the reference treatment liquid, or may store a reference image obtained by capturing an image of the reference treatment liquid.

[0035] Next, the substrate processing unit 110 in the substrate processing apparatus 100 of this embodiment will be described with reference to Fig. 2. Fig. 2 is a schematic diagram of the substrate processing unit 110 in the substrate processing apparatus 100.

[0036] The substrate processing unit 110 includes a chamber 112, a substrate holding part 120, a processing liquid supply part 130, a near-infrared light source 140, and a near-infrared imaging part 150. The chamber 112 accommodates the substrate holding part 120 and at least a part of the processing liquid supply part 130, the near-infrared light source 140, and the near-infrared imaging part 150.

[0037] The chamber 112 has a generally box-like shape with an internal space. The chamber 112 accommodates the substrates W. Here, the substrate processing unit 110 is a single-wafer type that processes the substrates W one by one, and the chamber 112 accommodates the substrates W one by one. The substrates W are accommodated in the chamber 112 and are processed in the chamber 112.

[0038] The substrate holding unit 120 holds the substrate W. The substrate holding unit 120 holds the substrate W horizontally so that the top surface (front surface) Wt of the substrate W faces upward and the back surface (bottom surface) Wr of the substrate W faces vertically downward. The substrate holding unit 120 also rotates the substrate W while holding it. The top surface Wt of the substrate W may be flattened. Alternatively, a device surface may be provided on the top surface Wt of the substrate W, or a pillar-shaped stacked structure with a recess may be provided on the top surface Wt of the substrate W. The substrate holding unit 120 rotates the substrate W while holding it.

[0039] For example, the substrate holding unit 120 may be a clamping type that clamps the edge of the substrate W. Alternatively, the substrate holding unit 120 may have any mechanism that holds the substrate W from the back surface Wr. For example, the substrate holding unit 120 may be a vacuum type. In this case, the substrate holding unit 120 holds the substrate W horizontally by adsorbing the central portion of the back surface Wr of the substrate W, which is the surface on which devices are not formed, to its upper surface. Alternatively, the substrate holding unit 120 may be a combination of a clamping type that brings multiple chuck pins into contact with the peripheral edge surface of the substrate W, and a vacuum type.

[0040] For example, the substrate holder 120 includes a spin base 121, a chuck member 122, a shaft 123, an electric motor 124, and a housing 125. The chuck member 122 is provided on the spin base 121. The chuck member 122 chucks the substrate W. Typically, the spin base 121 is provided with a plurality of chuck members 122.

[0041] The shaft 123 is a hollow shaft. The shaft 123 extends vertically along the rotation axis Ax. The spin base 121 is coupled to the upper end of the shaft 123. The substrate W is placed above the spin base 121.

[0042] The spin base 121 is disk-shaped. The chuck member 122 supports the substrate W horizontally. The shaft 123 extends downward from the center of the spin base 121. The electric motor 124 applies a rotational force to the shaft 123. The electric motor 124 rotates the shaft 123 in a rotational direction, thereby rotating the substrate W and the spin base 121 around the rotation axis Ax. The housing 125 surrounds the shaft 123 and the electric motor 124.

[0043] The processing liquid supply unit 130 supplies a processing liquid to the substrate W. Typically, the processing liquid supply unit 130 supplies the processing liquid to the upper surface Wt of the substrate W held by the substrate holding unit 120. Note that the processing liquid supply unit 130 may supply a plurality of types of processing liquid to the substrate W.

[0044] The processing liquid may be an etching liquid for etching the substrate W. Examples of the etching liquid include hydrofluoric nitric acid (a mixture of hydrofluoric acid (HF) and nitric acid (HNO3)), hydrofluoric acid, buffered hydrofluoric acid (BHF), ammonium fluoride, HFEG (a mixture of hydrofluoric acid and ethylene glycol), and phosphoric acid (H3PO4). The type of etching liquid is not particularly limited, and may be, for example, acidic or alkaline.

[0045] Alternatively, the treatment liquid may be a rinse liquid, such as deionized water (DIW), carbonated water, electrolytic ionized water, ozone water, ammonia water, diluted hydrochloric acid water (e.g., about 10 ppm to 100 ppm), and reduced water (hydrogen water).

[0046] Alternatively, the treatment liquid may be an organic solvent. Typically, the volatility of the organic solvent is higher than that of the rinse liquid. Examples of organic solvents include isopropyl alcohol (IPA), methanol, ethanol, acetone, hydrofluoroether (HFE), propylene glycol monoethyl ether (PGEE), and propylene glycol monomethyl ether acetate (PGMEA).

[0047] The processing liquid supply unit 130 includes a pipe 132, a valve 134, a nozzle 136, and a movement mechanism 138. The processing liquid flows through the pipe 132 from a supply source. The valve 134 opens and closes a flow path in the pipe 132. The nozzle 136 is connected to the pipe 132. As the processing liquid flows through the nozzle 136, the nozzle 136 ejects the processing liquid onto the upper surface Wt of the substrate W. The nozzle 136 is preferably configured to be movable relative to the substrate W.

[0048] The pipe 132 and the nozzle 136 are made of resin. In this case, the near-infrared rays emitted from the near-infrared light source 140 can pass through the pipe 132 and the nozzle 136.

[0049] The movement mechanism 138 moves the nozzle 136 in the horizontal and vertical directions. Specifically, the movement mechanism 138 moves the nozzle 136 in the circumferential direction around a rotation axis that extends in the vertical direction. The movement mechanism 138 also raises and lowers the nozzle 136 in the vertical direction.

[0050] The movement mechanism 138 has an arm 138a, a shaft 138b, and a drive unit 138c. The arm 138a extends horizontally. The nozzle 136 is disposed at the tip of the arm 138a. The nozzle 136 is disposed at the tip of the arm 138a in a position that allows the nozzle 136 to supply a processing liquid toward the upper surface Wt of the substrate W held by the chuck member 122. More specifically, the nozzle 136 is coupled to the tip of the arm 138a and protrudes downward from the arm 138a. The base end of the arm 138a is coupled to the shaft 138b. The shaft 138b extends vertically.

[0051] The drive unit 138c has a rotation drive mechanism and an elevation drive mechanism. The rotation drive mechanism of the drive unit 138c rotates the shaft 138b around the rotation axis, causing the arm 138a to pivot along a horizontal plane around the shaft 138b. As a result, the nozzle 136 moves along the horizontal plane. More specifically, the nozzle 136 moves in the circumferential direction around the shaft 138b. The rotation drive mechanism of the drive unit 138c includes, for example, a motor that can rotate forward and backward.

[0052] The lifting drive mechanism of the drive unit 138c raises and lowers the shaft 138b in the vertical direction. The lifting drive mechanism of the drive unit 138c raises and lowers the shaft 138b, thereby raising and lowering the nozzle 136 in the vertical direction. The lifting drive mechanism of the drive unit 138c has a drive source such as a motor and a lifting mechanism, and the drive source drives the lifting mechanism to raise or lower the shaft 138b. The lifting mechanism includes, for example, a rack and pinion mechanism or a ball screw.

[0053] The near-infrared light source 140 emits at least near-infrared light. The near-infrared light source 140 irradiates the inside of the chamber 112 with near-infrared light. Specifically, the near-infrared light source 140 irradiates at least a portion of the inside of the chamber 112. Here, the near-infrared light source 140 emits near-infrared light toward the substrate W.

[0054] For example, the near-infrared light source 140 emits near-infrared light having a wavelength in the range of at least 800 nm to 2.5 μm. Typically, the near-infrared light source 140 emits near-infrared light having a wavelength in the range of at least 800 nm to 1.5 μm.

[0055] The near-infrared light source 140 may emit visible light together with near-infrared light. Alternatively, the near-infrared light source 140 may switch between emitting near-infrared light and visible light. For example, when the near-infrared light source 140 emits visible light, it is preferable to emit light of a red wavelength as the visible light. This makes it possible to easily identify the substrate W and the like in the chamber 112.

[0056] For example, the near-infrared rays emitted from the near-infrared light source 140 travel in a straight line along the optical axis. Alternatively, the near-infrared rays emitted from the near-infrared light source 140 travel while diverging from the optical axis. The near-infrared light source 140 is preferably disposed so that the optical axis of the near-infrared light source 140 passes through the center of the substrate W.

[0057] The near-infrared imaging section 150 has a plurality of pixels. The near-infrared imaging section 150 is sensitive to at least near-infrared light. The near-infrared imaging section 150 captures an image of the inside of the chamber 112 by receiving components of near-infrared light emitted from the near-infrared light source 140 that have been transmitted through and / or reflected by components within the chamber 112, thereby generating a captured image. Here, the near-infrared imaging section 150 receives components of near-infrared light emitted from the near-infrared light source 140 that have been reflected by the substrate W.

[0058] The near-infrared imaging section 150 images the inside of the chamber 112. The near-infrared imaging section 150 may image the entire inside of the chamber 112. Alternatively, the near-infrared imaging section 150 may image a partial area inside the chamber 112. In this case, the near-infrared imaging section 150 may image the inside of the chamber 112 by switching the imaging area for imaging the inside of the chamber 112. Alternatively, the near-infrared imaging section 150 may image the inside of the chamber 112 by switching the imaging area between the entire inside of the chamber 112 and a partial area inside the chamber 112.

[0059] In the near-infrared imaging section 150, the frame rate may be 30 fps or 60 fps, or may be 120 fps.

[0060] The near-infrared imaging unit 150 may include a SWIR (Short Wavelength Infrared) image sensor. In this case, the near-infrared imaging unit 150 detects near-infrared light having a wavelength in the range of at least 800 nm to 2.5 μm.

[0061] The near-infrared imaging section 150 may be sensitive to not only near-infrared light but also visible light, or may switch between receiving near-infrared light and visible light.

[0062] The near-infrared imaging unit 150 captures an image of the surroundings centered on the imaging optical axis. Typically, the imaging optical axis is located at the center of the captured image. For example, the center of the image captured by the near-infrared imaging unit 150 is located at the center of the substrate W. In this case, the imaging optical axis of the near-infrared imaging unit 150 is located at the center of the substrate W. Alternatively, the center of the image captured by the near-infrared imaging unit 150 may be located at the pipe 132 and / or the nozzle 136.

[0063] The near-infrared imaging unit 150 generates a captured image of a component in the chamber 112 where the processing liquid is present. It is preferable that the captured image can identify the processing liquid in the processing liquid supply unit 130. For example, it is preferable that the captured image can identify the outer edge of the processing liquid supplied from the processing liquid supply unit 130 to the substrate W. Alternatively, it is preferable that the captured image can identify the outer edge of the processing liquid in the pipe 132 and / or the nozzle 136 before it is supplied from the processing liquid supply unit 130 to the substrate W.

[0064] When the substrate processing unit 110 is viewed from above, the optical axis of the near-infrared light source 140 and the imaging optical axis of the near-infrared imaging unit 150 are positioned on a straight line passing through the center of the substrate W. In this manner, the near-infrared light source 140 and the near-infrared imaging unit 150 may be disposed at positions projected onto a horizontal line passing through the center of the substrate W.

[0065] Alternatively, when the substrate processing unit 110 is viewed from above, the optical axis of the near-infrared light source 140 and the imaging center of the near-infrared imaging unit 150 may be perpendicular to the center of the substrate W. In this manner, the near-infrared light source 140 and the near-infrared imaging unit 150 may be disposed at positions perpendicular to the center of the substrate W.

[0066] Here, the near-infrared light source 140 and the near-infrared image capturing unit 150 are disposed inside the chamber 112. The near-infrared light source 140 and the near-infrared image capturing unit 150 may be disposed fixedly relative to each other.

[0067] The near-infrared light source 140 and the near-infrared image capturing unit 150 may be movable relative to the substrate W. For example, the near-infrared light source 140 and the near-infrared image capturing unit 150 are preferably movable in the horizontal and / or vertical directions according to a movement mechanism controlled by the control unit 102. When the near-infrared light source 140 and the near-infrared image capturing unit 150 are moved, the near-infrared light source 140 and the near-infrared image capturing unit 150 may be movable independently of each other. Alternatively, the near-infrared light source 140 and the near-infrared image capturing unit 150 may be movable as a unit.

[0068] The processing liquid may contain organic substances. For example, in organic substances, bonds such as CH, CO, CN, and CF absorb specific wavelengths included in near-infrared rays. The amount of near-infrared rays absorbed at specific wavelengths is proportional to the amount of components having specific bonding groups. Therefore, the amount of specific components present on the substrate W can be measured based on the near-infrared rays reflected from the substrate W.

[0069] The substrate processing apparatus 100 further includes a cup 180. The cup 180 collects the processing liquid that has splashed from the substrate W. The cup 180 moves up and down. For example, the cup 180 moves up vertically to the side of the substrate W during the period in which the processing liquid supply unit 130 supplies the processing liquid to the substrate W. In this case, the cup 180 collects the processing liquid that has splashed from the substrate W due to the rotation of the substrate W. Furthermore, when the period in which the processing liquid supply unit 130 supplies the processing liquid to the substrate W ends, the cup 180 moves down vertically from the side of the substrate W.

[0070] As described above, the control device 101 includes the control unit 102 and the memory unit 104. The control unit 102 controls the substrate holder 120, the processing liquid supply unit 130, the near-infrared light source 140, the near-infrared image capture unit 150, and / or the cup 180. In one example, the control unit 102 controls the electric motor 124, the valve 134, the moving mechanism 138, the near-infrared light source 140, the near-infrared image capture unit 150, and / or the cup 180.

[0071] According to the substrate processing apparatus 100 of this embodiment, the processing liquid in the chamber 112 irradiated with near-infrared light from the near-infrared light source 140 is imaged by the near-infrared image capturing unit 150. Typically, the processing liquid is transparent and transmits visible light. However, the processing liquid often exhibits relatively strong absorption in the near-infrared region. Therefore, the outer edge of the processing liquid can be identified in the captured image of the processing liquid in the chamber 112 captured by the near-infrared image capturing unit 150.

[0072] If the processing liquid has a fairly high absorbance to near-infrared light, the near-infrared light source 140 preferably emits visible light as well as near-infrared light, so that the captured image shows the processing liquid in the chamber 112 with a relatively high brightness.

[0073] Furthermore, the type of processing liquid often exhibits a specific absorption in the near-infrared region depending on the type of processing liquid, and therefore the type of processing liquid can be identified from the captured image of the processing liquid in the chamber 112 captured by the near-infrared imaging unit 150.

[0074] Alternatively, since different treatment liquids exhibit different wavelengths of strong absorption, the near-infrared light source 140 may change the wavelength of the emitted near-infrared light, thereby making it possible to easily identify the outer edge and type of treatment liquid.

[0075] The substrate processing apparatus 100 of this embodiment is suitable for use in the manufacture of semiconductor devices having semiconductors. Typically, in semiconductor devices, conductive layers and insulating layers are stacked on a substrate. The substrate processing apparatus 100 is suitable for use in cleaning and / or processing (e.g., etching, changing characteristics, etc.) the conductive layers and / or insulating layers during the manufacture of semiconductor devices.

[0076] Next, a substrate processing apparatus 100 according to this embodiment will be described with reference to Figures 1 to 3. Figure 3 is a block diagram of the substrate processing apparatus 100.

[0077] 3 , the control device 101 controls various operations of the substrate processing apparatus 100. The control device 101 controls the indexer robot IR, the center robot CR, the substrate holding unit 120, the processing liquid supply unit 130, the near-infrared light source 140, the near-infrared image capturing unit 150, and the cup 180. Specifically, the control device 101 controls the indexer robot IR, the center robot CR, the substrate holding unit 120, the processing liquid supply unit 130, the near-infrared light source 140, the near-infrared image capturing unit 150, and the cup 180 by transmitting control signals to the indexer robot IR, the center robot CR, the substrate holding unit 120, the processing liquid supply unit 130, the near-infrared light source 140, the near-infrared image capturing unit 150, and the cup 180.

[0078] The memory unit 104 also stores computer programs and data. The data includes recipe data. The recipe data includes information indicating a plurality of recipes. Each of the plurality of recipes specifies the processing content, processing procedure, and substrate processing conditions for the substrate W. The control unit 102 executes the computer programs stored in the memory unit 104 to perform substrate processing operations.

[0079] The control unit 102 controls the indexer robot IR to transfer the substrate W by the indexer robot IR.

[0080] The control unit 102 controls the center robot CR to transfer the substrate W by the center robot CR. For example, the center robot CR receives an unprocessed substrate W and transports the substrate W into one of the plurality of chambers 112. The center robot CR also receives a processed substrate W from the chamber 112 and transports the substrate W out.

[0081] The control unit 102 controls the substrate holding unit 120 to start rotation of the substrate W, change the rotation speed, and stop rotation of the substrate W. For example, the control unit 102 can control the substrate holding unit 120 to change the rotation speed of the substrate holding unit 120. Specifically, the control unit 102 can change the rotation speed of the substrate W by changing the rotation speed of the electric motor 124 of the substrate holding unit 120.

[0082] The control unit 102 controls the valve 134 of the processing liquid supply unit 130 to switch the state of the valve 134 between an open state and a closed state. Specifically, the control unit 102 controls the valve 134 of the processing liquid supply unit 130 to open the valve 134, thereby allowing the processing liquid flowing through the pipe 132 toward the nozzle 136 to pass. Furthermore, the control unit 102 controls the valve 134 of the processing liquid supply unit 130 to close the valve 134, thereby stopping the supply of the processing liquid flowing through the pipe 132 toward the nozzle 136.

[0083] The control unit 102 controls the movement mechanism 138 of the processing liquid supply unit 130 to move the nozzle 136. Specifically, the control unit 102 controls the movement mechanism 138 of the processing liquid supply unit 130 to move the nozzle 136 to above the upper surface Wt of the substrate W. The control unit 102 also controls the movement mechanism 138 of the processing liquid supply unit 130 to move the nozzle 136 to a retracted position away from above the upper surface Wt of the substrate W.

[0084] The control unit 102 controls the near-infrared light source 140 and the near-infrared imaging unit 150 to capture an image of at least a portion of the area inside the chamber 112 and generate a captured image. The control unit 102 controls the near-infrared light source 140 to irradiate at least a portion of the area inside the chamber 112 with near-infrared light. The control unit 102 also controls the near-infrared imaging unit 150 to capture an image of at least a portion of the area inside the chamber 112 and generate a captured image. The near-infrared imaging unit 150 captures an image of the processing liquid supplied from the processing liquid supply unit 130 and / or the area where the processing liquid in the processing liquid supply unit 130 is present.

[0085] For example, the control unit 102 controls the near-infrared light source 140 and the near-infrared image capturing unit 150 so that the near-infrared light source 140 emits near-infrared rays toward the substrate W, and the near-infrared image capturing unit 150 receives the near-infrared rays reflected by the substrate W and measures the luminance value. Note that the control unit 102 may control the near-infrared light source 140 and the near-infrared image capturing unit 150 to move the near-infrared light source 140 and the near-infrared image capturing unit 150 relative to the substrate W.

[0086] The control unit 102 identifies the outer edge of the treatment liquid in the captured image. For example, the control unit 102 identifies the outer edge of the treatment liquid in the captured image based on the luminance values ​​in the captured image. In one example, the control unit 102 identifies the outer edge of the treatment liquid in the captured image based on the luminance values ​​in the captured image and the luminance values ​​of a reference treatment liquid stored in the storage unit 104. Alternatively, the control unit 102 identifies the outer edge of the treatment liquid in the captured image based on the captured image and the reference image.

[0087] Furthermore, the control unit 102 identifies the type of processing liquid in the captured image based on the luminance value in the captured image. The control unit 102 identifies the type of processing liquid in the captured image based on the luminance value in the captured image and the luminance value of the reference processing liquid stored in the storage unit 104. Alternatively, the control unit 102 identifies the type of processing liquid in the captured image based on the captured image and the reference image.

[0088] The control unit 102 may control the cup 180 to move the cup 180 relative to the substrate W. Specifically, the control unit 102 raises the cup 180 vertically upward to the side of the substrate W during the period in which the processing liquid supply unit 130 supplies the processing liquid to the substrate W. Furthermore, when the period in which the processing liquid supply unit 130 supplies the processing liquid to the substrate W ends, the control unit 102 lowers the cup 180 vertically downward from the side of the substrate W.

[0089] The substrate processing apparatus 100 of this embodiment is preferably used for forming semiconductor elements. For example, the substrate processing apparatus 100 is preferably used for processing a substrate W used as a semiconductor element having a stacked structure. The semiconductor element is a so-called 3D structure memory (storage device). As an example, the substrate W is preferably used as a NAND flash memory.

[0090] Next, the substrate processing method of the present embodiment will be described with reference to Figures 1 to 4. Figure 4 is a flow chart of the substrate processing method.

[0091] 4, in step SA, the substrate W is loaded into the substrate processing apparatus 100. Specifically, the substrate W is loaded into the chamber 112 of the substrate processing unit 110 via the indexer robot IR and the center robot CR.

[0092] In step SB, the substrate W is held. Specifically, the substrate holding part 120 holds the substrate W. When the substrate W is loaded into the chamber 112, the substrate W is held by the substrate holding part 120.

[0093] In step SC, the substrate W is processed in the substrate processing unit 110. Typically, the substrate holder 120 holds and rotates the substrate W, and the processing liquid supply unit 130 supplies the substrate W with a processing liquid.

[0094] In this embodiment, the near-infrared light source 140 emits near-infrared light. At least a portion of the chamber 112 is irradiated with the near-infrared light emitted from the near-infrared light source 140. For example, the substrate W in the chamber 112 is irradiated with the near-infrared light emitted from the near-infrared light source 140. The near-infrared imaging unit 150 images the chamber 112 irradiated with the near-infrared light. For example, the near-infrared imaging unit 150 images the substrate W irradiated with the near-infrared light. By imaging the chamber 112 irradiated with near-infrared light from the near-infrared imaging unit 150, the processing liquid in the chamber 112 can be imaged with high accuracy even if the processing liquid is substantially transparent.

[0095] In step SD, the substrate W is released from its hold. Specifically, the substrate holder 120 releases the hold of the substrate W.

[0096] In step SE, the substrate W is unloaded. The substrate W is unloaded from the substrate processing apparatus 100. Specifically, the substrate W is unloaded from the chamber 112 of the substrate processing unit 110 via the center robot CR and the indexer robot IR.

[0097] According to this embodiment, the processing liquid irradiated with near-infrared light from the near-infrared light source 140 is imaged by the near-infrared image capturing unit 150. Since the processing liquid absorbs near-infrared light relatively strongly, the outer edge of the processing liquid can be identified with high accuracy.

[0098] Next, the substrate processing step in the substrate processing method of the present embodiment will be described with reference to Figures 1 to 5. Figure 5 is a flow diagram of the substrate processing step in the substrate processing method of the present embodiment.

[0099] 5, in step S110, the substrate W is rotated while being held. Specifically, the substrate holder 120 rotates the substrate W while holding the substrate W. For example, the rotation speed of the substrate W is 10 rpm to 1500 rpm.

[0100] In step S120, the near-infrared light source 140 irradiates the substrate W with near-infrared light, and the near-infrared imaging unit 150 images the substrate W irradiated with near-infrared light. The near-infrared light source 140 irradiates the substrate W with near-infrared light, and the near-infrared imaging unit 150 images the substrate W irradiated with near-infrared light to generate a captured image. The control unit 102 controls the near-infrared light source 140 and the near-infrared imaging unit 150 so that the near-infrared light source 140 emits near-infrared light toward the substrate W and the near-infrared imaging unit 150 images the substrate W. The timing at which the near-infrared light source 140 starts emitting near-infrared light may be the same as or different from the timing at which the near-infrared imaging unit 150 starts imaging the substrate W. The timing at which the near-infrared light source 140 starts emitting near-infrared light may be earlier or later than the timing at which the near-infrared imaging unit 150 starts imaging the substrate W.

[0101] In step S130, the processing liquid is supplied to the substrate W. Specifically, the control unit 102 controls the processing liquid supply unit 130 so that the processing liquid supply unit 130 starts supplying the processing liquid to the substrate W.

[0102] The supply of the treatment liquid in step S130 may be started before or after the irradiation of near-infrared rays and / or the imaging by the near-infrared imaging section 150 in step S120.

[0103] In step S140, the processing liquid in the captured image is identified based on the captured image generated by the near-infrared imaging unit 150. The control unit 102 identifies the processing liquid in the captured image based on the captured image. For example, the control unit 102 identifies the outer edge of the processing liquid in the captured image based on the captured image. The control unit 102 may also identify the type of processing liquid in the captured image based on the captured image.

[0104] For example, the control unit 102 identifies the outer edge of the treatment liquid in the captured image based on the luminance value in the captured image. For example, the control unit 102 identifies the outer edge of the treatment liquid in the captured image based on the luminance value in the captured image and the luminance value of a reference treatment liquid stored in the storage unit 104. Alternatively, the control unit 102 identifies the outer edge of the treatment liquid in the captured image based on the captured image and the reference image.

[0105] Furthermore, the control unit 102 identifies the type of processing liquid in the captured image based on the luminance value in the captured image. The control unit 102 identifies the type of processing liquid in the captured image based on the luminance value in the captured image and the luminance value of the reference processing liquid stored in the storage unit 104. Alternatively, the control unit 102 identifies the type of processing liquid in the captured image based on the captured image and the reference image.

[0106] In step S150, based on the result of identifying the processing liquid, the control unit 102 controls the processing liquid supply part 130. Specifically, based on the result of identifying the outer edge of the processing liquid, the control unit 102 controls the processing liquid supply part 130.

[0107] For example, the control unit 102 controls the processing liquid supply unit 130 to change the supply of the processing liquid. In one example, the control unit 102 controls the processing liquid supply unit 130 to change the flow rate of the processing liquid. Alternatively, the control unit 102 controls the processing liquid supply unit 130 to change the processing liquid supplied to the substrate W.

[0108] In step S160, the supply of the processing liquid is stopped. Specifically, the control unit 102 controls the processing liquid supply unit 130 so that the processing liquid supply unit 130 stops supplying the processing liquid to the substrate W.

[0109] In step S170, the rotation of the substrate W is stopped. Specifically, the control unit 102 controls the substrate holding unit 120 so that the substrate holding unit 120 stops the rotation of the substrate W.

[0110] In this embodiment, the substrate W is irradiated with near-infrared light from the near-infrared imaging unit 150 and an image is taken. Near-infrared light is selectively absorbed by the processing liquid. This allows the processing liquid on the upper surface Wt of the substrate W to be imaged with high accuracy. Therefore, the control unit 102 can control the processing of the substrate W in accordance with the state of the processing liquid on the upper surface Wt of the substrate W.

[0111] As described above, the near-infrared light source 140 may switch between emitting visible light and near-infrared light, and the near-infrared image capturing section 150 may switch between capturing light in the visible region and the near-infrared region.

[0112] Next, the substrate processing apparatus 100 of this embodiment will be described with reference to Fig. 6. Fig. 6(a) is a schematic diagram of a captured image of a substrate W supplied with processing liquid L1, captured in the visible region, Fig. 6(b) is a schematic diagram of a captured image of a substrate W supplied with processing liquid L1, captured in the near-infrared region, and Fig. 6(c) is a schematic diagram of a captured image of a substrate W supplied with processing liquid L2, captured in the near-infrared region.

[0113] 6(a), the nozzle 136 ejects the processing liquid L1 onto the upper surface Wt of the substrate W. Here, the nozzle 136 ejects the processing liquid L1 onto the center of the upper surface Wt of the substrate W. Because the substrate W is rotating, the processing liquid L1 spreads radially from the center of the upper surface Wt of the substrate W, and the processing liquid L1 covers the entire upper surface Wt of the substrate W. Note that the processing liquid that reaches the radial end of the upper surface Wt of the substrate W splashes outward from the substrate W in the radial direction.

[0114] The processing liquid L1 is transparent to visible light, so even if an image of the substrate W supplied with the processing liquid L1 is captured in the visible light range, the outer edge of the processing liquid L1 on the upper surface Wt of the substrate W cannot be identified.

[0115] In particular, when the liquid film of the processing liquid L1 becomes thin and interference fringes occur in the processing liquid L1, the discrete interference fringes occurring in the processing liquid L1 can be identified from an image captured in the visible range. Alternatively, when there is unevenness in the thickness of the liquid film on the upper surface Wt of the processing liquid L1, the processing liquid L1 can be partially identified from an image captured in the visible range based on the discrete unevenness in the thickness of the processing liquid L1. However, generally, when an image of a substrate W to which the processing liquid L1 has been supplied is captured in the visible range, it is not possible to identify the outer edge of the processing liquid L1 on the upper surface Wt of the substrate W.

[0116] 6(b), when the substrate W supplied with the processing liquid L1 is imaged in the near-infrared region, the processing liquid L1 effectively absorbs near-infrared light, and therefore the processing liquid L1 on the upper surface Wt of the substrate W can be identified with high accuracy from the captured image. In this case, the outer edge of the processing liquid L1 can be identified from the captured image.

[0117] Also, as shown in Figure 6(c), when the nozzle 136 ejects the processing liquid L2 onto the upper surface Wt of the substrate W, when the substrate W is imaged in the near-infrared region, the processing liquid L2 effectively absorbs near-infrared rays in a manner different from that of the processing liquid L1, so the processing liquid L2 on the upper surface Wt of the substrate W can be identified with high accuracy.

[0118] As described above, according to this embodiment, the processing liquids L1 and L2 irradiated with near-infrared light are imaged by the near-infrared image capturing unit 150. Because the processing liquids L1 and L2 absorb near-infrared light relatively strongly, the outer edges of the processing liquids L1 and L2 can be identified with high accuracy. Furthermore, because the processing liquids L1 and L2 absorb near-infrared light in different ways, the types of the processing liquids L1 and L2 can be identified with high accuracy.

[0119] According to this embodiment, the outer edge of the processing liquid can be identified with high accuracy, and therefore, the change in the processing liquid on the upper surface Wt of the substrate W can be identified.

[0120] Next, the substrate processing apparatus 100 of this embodiment will be described with reference to Fig. 7. Fig. 7(a) is a schematic diagram of an image captured in the substrate processing apparatus 100 of this embodiment of a substrate W on whose upper surface Wt the processing liquid L1 has begun to be discharged, Fig. 7(b) is a schematic diagram of an image captured in the substrate processing apparatus 100 of this embodiment of a substrate W on whose upper surface Wt the processing liquid L1 is spreading, and Fig. 7(c) is a schematic diagram of an image captured in the substrate processing apparatus 100 of this embodiment of a substrate W whose upper surface Wt is entirely covered with the processing liquid L1.

[0121] 7(a), the nozzle 136 starts to discharge the processing liquid L1 onto the upper surface Wt of the substrate W. Specifically, the nozzle 136 starts to discharge the processing liquid L1 onto the center of the upper surface Wt of the substrate W. Here, the substrate W rotates at a predetermined rotation speed.

[0122] Here, the upper surface Wt of the substrate W is not covered with the processing liquid and is dry. Typically, when the upper surface Wt of the substrate W is not covered with the processing liquid, near-infrared rays emitted from the near-infrared light source 140 are irradiated onto the upper surface Wt of the substrate W, the near-infrared rays are strongly reflected. Therefore, in the captured image, the upper surface Wt of the substrate W that is not covered with the processing liquid L1 exhibits a high brightness value.

[0123] 7(b), when the nozzle 136 continues to eject the processing liquid L1 onto the upper surface Wt of the substrate W, the processing liquid L1 spreads over the upper surface Wt of the substrate W. In detail, when the processing liquid L1 continues to be ejected from the nozzle 136 onto the center of the upper surface Wt of the substrate W, the processing liquid L1 spreads in the radial direction from the center of the upper surface Wt of the substrate W.

[0124] As described above, when the upper surface Wt of the substrate W is not covered with the processing liquid L1, the region of the upper surface Wt of the substrate W that is not covered with the processing liquid L1 exhibits a relatively high luminance value in the captured image. On the other hand, in the region of the upper surface Wt of the substrate W that is covered with the processing liquid L1, when the upper surface Wt of the substrate W is irradiated with near-infrared rays emitted from the near-infrared light source 140, the near-infrared rays are strongly absorbed by the processing liquid L1. Therefore, in the captured image, the region of the upper surface Wt of the substrate W that is covered with the processing liquid L1 exhibits a relatively low luminance value.

[0125] 7(c), when the nozzle 136 continues to eject the processing liquid L1 onto the upper surface Wt of the substrate W, the processing liquid L1 spreads over the entire upper surface Wt of the substrate W, and the processing liquid L1 covers the entire upper surface Wt of the substrate W. In detail, when the processing liquid L1 continues to be ejected from the nozzle 136 onto the center of the upper surface Wt of the substrate W, the processing liquid L1 spreads in the radial direction from the center of the upper surface Wt of the substrate W, and the processing liquid L1 covers the entire upper surface Wt of the substrate W. Note that the processing liquid L1 that reaches the radial end of the upper surface Wt of the substrate W splashes outward from the substrate W in the radial direction.

[0126] When the processing liquid L1 covers the entire upper surface Wt of the substrate W, the near-infrared rays emitted from the near-infrared light source 140 are irradiated onto the upper surface Wt of the substrate W, and the near-infrared rays are strongly absorbed by the processing liquid L1, the area of ​​the upper surface Wt of the substrate W that is covered with the processing liquid L1 therefore exhibits a relatively low luminance value in the captured image.

[0127] In this embodiment, the substrate W supplied with the processing liquid L1 is irradiated with near-infrared rays from the near-infrared light source 140 and imaged by the near-infrared imaging unit 150. This makes it possible to identify changes in the outer edge of the processing liquid L1 with high accuracy.

[0128] 7, the captured image capturing the process of the processing liquid L1 starting to be discharged from the nozzle 136 and spreading radially from the center of the upper surface Wt of the substrate W has been described, but the present embodiment is not limited to this. The near-infrared imaging unit 150 may also capture the process of the processing liquid L1 disappearing from the upper surface Wt of the substrate W due to drying.

[0129] In the substrate processing method of this embodiment, the flow rate of the processing liquid supplied from the processing liquid supply unit 130 to the upper surface Wt of the substrate W may be changed based on the result of identifying the outer edge of the processing liquid.

[0130] Next, the substrate processing steps in the substrate processing method of this embodiment will be described with reference to Figures 1 to 8. Figure 8 is a flow diagram of the substrate processing steps in the substrate processing method of this embodiment. The flow diagram of Figure 8 is similar to the flow diagram of Figure 5 except that whether or not the processing liquid covers the upper surface Wt of the substrate W is determined based on the result of identifying the outer edge of the processing liquid, and the flow rate of the processing liquid supplied from the processing liquid supply unit 130 to the upper surface Wt of the substrate W is changed, and therefore duplicated explanations will be omitted to avoid redundancy.

[0131] As shown in FIG. 8, steps S110 and S120 are similar to steps S110 and S120 in FIG.

[0132] In step S130, the processing liquid is supplied to the substrate W. The control unit 102 controls the processing liquid supply unit 130 so that the processing liquid supply unit 130 starts supplying the processing liquid to the substrate W. Here, the processing liquid is supplied to the substrate W in a dry state. In this case, the flow rate of the processing liquid is set to a relatively large value.

[0133] In step S140, the processing liquid in the captured image is identified based on the captured image generated by the near-infrared imaging unit 150. The control unit 102 identifies the outer edge of the processing liquid in the captured image based on the captured image. The control unit 102 may also identify the type of processing liquid in the captured image based on the captured image.

[0134] In step S150a, it is determined whether the processing liquid covers the entire upper surface Wt of the substrate W. Specifically, the control unit 102 determines whether the processing liquid covers the entire upper surface Wt of the substrate W based on the result of identifying the outer edge of the processing liquid.

[0135] If the processing liquid does not cover the entire upper surface Wt of the substrate W (No in step S150a), the process returns to step S140. As a result, the identification of the outer edge of the processing liquid and the determination of full coverage are repeated until the processing liquid covers the entire upper surface Wt of the substrate W. On the other hand, if the processing liquid covers the entire upper surface Wt of the substrate W (Yes in step S150a), the process proceeds to step S150b.

[0136] In step S150b, the flow rate of the processing liquid supplied to the substrate W is reduced. The control unit 102 controls the processing liquid supply unit 130 so that the flow rate of the processing liquid supplied to the substrate W by the processing liquid supply unit 130 is reduced.

[0137] For example, the control unit 102 may reduce the flow rate of the processing liquid to a preset flow rate. Alternatively, the control unit 102 may reduce the flow rate of the processing liquid while identifying the outer edge of the processing liquid on the upper surface Wt of the substrate W. In this case, the processing liquid supply unit 130 continues to supply the processing liquid for a predetermined period of time. Thereafter, the process proceeds to step S160. Note that steps S160 and S170 are similar to steps S160 and S170 in FIG. 5.

[0138] According to this embodiment, the flow rate of the processing liquid supplied from the processing liquid supply unit 130 to the upper surface Wt of the substrate W is reduced based on the result of identifying the outer edge of the processing liquid. Therefore, it is not necessary to use the processing liquid at an unnecessary flow rate in order to reliably cover the entire upper surface Wt of the substrate W.

[0139] 8, the processing liquid supply unit 130 first supplies the processing liquid at a relatively high flow rate, and after the processing liquid has covered the entire upper surface Wt of the substrate W, the flow rate of the processing liquid supplied from the processing liquid supply unit 130 is reduced, but this embodiment is not limited to this. The processing liquid supply unit 130 may first supply the processing liquid at a relatively low flow rate, and if the processing liquid does not cover the entire upper surface Wt of the substrate W within a predetermined period, the flow rate of the processing liquid supplied from the processing liquid supply unit 130 may be increased.

[0140] 8, the flow rate of the processing liquid is changed based on the result of identifying the outer edge of the processing liquid, but this embodiment is not limited to this. The supply of the processing liquid from the processing liquid supply unit 130 to the upper surface Wt of the substrate W may be stopped based on the result of identifying the outer edge of the processing liquid.

[0141] Next, the substrate processing step in the substrate processing method of this embodiment will be described with reference to Figures 1 to 9. Figure 9 is a flow diagram of the substrate processing step in the substrate processing method of this embodiment. The flow diagram of Figure 9 is similar to the flow diagram of Figure 5 except that the supply of the processing liquid is stopped based on the result of identifying the outer edge of the processing liquid, and therefore, duplicated explanations will be omitted to avoid redundancy.

[0142] As shown in FIG. 9, steps S110 and S120 are similar to steps S110 and S120 in FIG.

[0143] In step S130, the processing liquid is supplied to the substrate W. The control unit 102 controls the processing liquid supply unit 130 so that the processing liquid supply unit 130 starts supplying the processing liquid to the substrate W. Here, the processing liquid is supplied to the substrate W in a dry state.

[0144] In step S140, the processing liquid in the captured image is identified based on the captured image generated by the near-infrared imaging unit 150. The control unit 102 identifies the outer edge of the processing liquid in the captured image based on the captured image. The control unit 102 may also identify the type of processing liquid in the captured image based on the captured image.

[0145] In step S150c, it is determined whether the processing liquid covers the entire upper surface Wt of the substrate W. Specifically, the control unit 102 determines whether the processing liquid covers the entire upper surface Wt of the substrate W based on the result of identifying the outer edge of the processing liquid.

[0146] If the entire upper surface Wt of the substrate W is not covered with the processing liquid (No in step S150c), the process returns to step S140. As a result, the identification of the outer edge of the processing liquid and the determination of full coverage are repeated until the processing liquid covers the entire upper surface Wt of the substrate W. On the other hand, if the processing liquid covers the entire upper surface Wt of the substrate W (Yes in step S150c), the process proceeds to step S150d.

[0147] In step S150d, time measurement is started. The control unit 102 measures the time that has elapsed since the processing liquid covered the entire upper surface Wt of the substrate W, while controlling the processing liquid supply unit 130 to continue supplying the processing liquid to the substrate W.

[0148] In step S150e, it is determined whether a predetermined time has elapsed since the start of time measurement. If the predetermined time has not elapsed (No in step S150e), the process returns to step S150e. This repeats the determination until the predetermined time has elapsed since the start of time measurement. On the other hand, if the predetermined time has elapsed (Yes in step S150e), the process proceeds to step S160. Note that steps S160 and S170 are the same as steps S160 and S170 in FIG. 5.

[0149] According to this embodiment, the time taken for the processing liquid to be supplied from the processing liquid supply unit 130 to the upper surface Wt of the substrate W is measured based on the result of identifying the outer edge of the processing liquid. This makes it possible to suppress variations in processing for each substrate W, even if variations occur in the process until the processing liquid covers the upper surface Wt of the substrate W.

[0150] 1 to 9, the near-infrared light source 140 and the near-infrared image capturing unit 150 are disposed inside the chamber 112, but this embodiment is not limited to this. The near-infrared light source 140 and the near-infrared image capturing unit 150 may be disposed outside the chamber 112.

[0151] Next, the substrate processing unit 110 in the substrate processing apparatus 100 of this embodiment will be described with reference to Figures 1 to 10. Figure 10 is a schematic diagram of the substrate processing unit 110 in the substrate processing apparatus 100 of this embodiment. The substrate processing unit 110 in Figure 10 has the same configuration as the substrate processing unit 110 in Figure 2, except that the near-infrared light source 140 and the near-infrared imaging unit 150 are arranged outside the windows 112a and 112b of the chamber 112, and therefore, redundant description will be omitted to avoid redundancy.

[0152] 10 , the near-infrared light source 140 and the near-infrared image capturing unit 150 are disposed outside the chamber 112. For example, the near-infrared light source 140 and the near-infrared image capturing unit 150 are disposed at positions facing each other across the chamber 112. By disposing the near-infrared light source 140 and the near-infrared image capturing unit 150 outside the chamber 112, it is possible to prevent the treatment liquid from adhering to the near-infrared light source 140 and the near-infrared image capturing unit 150.

[0153] The chamber 112 preferably has windows 112a and 112b. For example, the windows 112a and 112b transmit at least near-infrared light. The windows 112a and 112b are preferably arranged on opposite side surfaces of the chamber 112. For example, the near-infrared light source 140 emits near-infrared light to the substrate W through the window 112a. The near-infrared image capturing unit 150 captures an image of the substrate W through the window 112b.

[0154] When the substrate processing unit 110 is viewed from above, the optical axis of the near-infrared light source 140 and the imaging optical axis of the near-infrared imaging unit 150 are positioned on a straight line passing through the center of the substrate W. In this manner, the near-infrared light source 140 and the near-infrared imaging unit 150 may be disposed at positions projected onto a horizontal line passing through the center of the substrate W.

[0155] Alternatively, when the substrate processing unit 110 is viewed from above, the optical axis of the near-infrared light source 140 and the imaging optical axis of the near-infrared imaging unit 150 may be perpendicular to the center of the substrate W. In this manner, the near-infrared light source 140 and the near-infrared imaging unit 150 may be disposed at positions perpendicular to the center of the substrate W.

[0156] 2 and 10, the processing liquid supply unit 130 supplies one type of processing liquid to the substrate W, but this embodiment is not limited to this. The processing liquid supply unit 130 may supply multiple types of processing liquid to the substrate W.

[0157] Next, the substrate processing unit 110 in the substrate processing apparatus 100 of this embodiment will be described with reference to Figures 1 to 11. Figure 11 is a schematic diagram of the substrate processing unit 110 in the substrate processing apparatus 100 of this embodiment. The substrate processing unit 110 in Figure 11 has the same configuration as the substrate processing unit 110 described above with reference to Figure 2, except that the processing liquid supply unit 130 has a first processing liquid supply unit 130a that supplies a first processing liquid and a second processing liquid supply unit 130b that supplies a second processing liquid, and therefore, redundant description will be omitted to avoid redundancy.

[0158] 11, the processing liquid supply unit 130 includes a first processing liquid supply unit 130a and a second processing liquid supply unit 130b. The first processing liquid supply unit 130a supplies a first processing liquid to the substrate W. The second processing liquid supply unit 130b supplies a second processing liquid, which is different from the first processing liquid, to the substrate W.

[0159] The first processing liquid supply unit 130a includes a pipe 132a, a valve 134a, and a nozzle 136a. The first processing liquid is supplied to the pipe 132a from a supply source. The valve 134a opens and closes a flow path in the pipe 132a. The nozzle 136a is connected to the pipe 132a. The nozzle 136a ejects the first processing liquid onto the upper surface Wt of the substrate W.

[0160] The second processing liquid supply unit 130b includes a pipe 132b, a valve 134b, and a nozzle 136b. The second processing liquid is supplied to the pipe 132b from a supply source. The valve 134b opens and closes a flow path in the pipe 132b. The nozzle 136b is connected to the pipe 132b. The nozzle 136b ejects the second processing liquid onto the upper surface Wt of the substrate W.

[0161] Next, the substrate processing method of this embodiment will be described with reference to Figures 1 to 12. Figure 12(a) is a schematic view of an image captured of a substrate W to which a first processing liquid La is supplied in the substrate processing apparatus 100 of this embodiment, Figure 12(b) is a schematic view of an image captured of a substrate W to which the supply of the first processing liquid La has been stopped and the supply of the second processing liquid Lb has been started in the substrate processing apparatus 100 of this embodiment, and Figure 12(c) is a schematic view of an image captured of a substrate W to which the second processing liquid Lb has been supplied in the substrate processing apparatus 100 of this embodiment.

[0162] 12(a), the nozzle 136a discharges the first processing liquid La onto the upper surface Wt of the substrate W. Here, the nozzle 136a discharges the first processing liquid La onto the center of the upper surface Wt of the substrate W. Because the substrate W is rotating, the first processing liquid La spreads radially from the center of the upper surface Wt of the substrate W, and covers the entire upper surface Wt of the substrate W. Note that the first processing liquid La that reaches the radial end of the upper surface Wt of the substrate W splashes radially outward from the substrate W. At this time, the outer edge of the first processing liquid La that covers the entire upper surface Wt of the substrate W can be identified from the captured image.

[0163] 12(b), the nozzle 136a stops discharging the first processing liquid La onto the upper surface Wt of the substrate W, and then the nozzle 136b starts discharging the second processing liquid Lb onto the upper surface Wt of the substrate W. When the second processing liquid Lb is discharged following the discharge of the first processing liquid La, the boundary between the first processing liquid La and the second processing liquid Lb spreads in the radial direction from the center of the upper surface Wt of the substrate W. At this time, the outer edges of the first processing liquid La and the second processing liquid Lb covering the upper surface Wt of the substrate W can be identified from the captured image.

[0164] 12(c), the nozzle 136b ejects the second processing liquid Lb onto the upper surface Wt of the substrate W. Here, the nozzle 136b ejects the second processing liquid Lb onto the center of the upper surface Wt of the substrate W. Because the substrate W is rotating, the second processing liquid Lb spreads radially from the center of the upper surface Wt of the substrate W, and covers the entire upper surface Wt of the substrate W. Note that the second processing liquid Lb that reaches the radial end of the upper surface Wt of the substrate W splashes radially outward from the substrate W. At this time, the outer edge of the second processing liquid Lb that covers the entire upper surface Wt of the substrate W can be identified from the captured image.

[0165] According to this embodiment, the first processing liquid La and the second processing liquid Lb irradiated with near-infrared light are imaged by the near-infrared image capturing unit 150. Because the first processing liquid La and the second processing liquid Lb absorb near-infrared light relatively strongly, the outer edges of the first processing liquid La and the second processing liquid Lb can be identified with high accuracy. Furthermore, because the first processing liquid La and the second processing liquid Lb absorb near-infrared light in different ways, the types of the first processing liquid La and the second processing liquid Lb can be identified with high accuracy.

[0166] Next, a substrate processing method of this embodiment will be described with reference to Figures 1 to 13. Figure 13 is a flow diagram of the substrate processing method. The flow diagram of Figure 13 is similar to the flow diagram described above with reference to Figure 5, except that the first processing liquid and the second processing liquid are supplied from the first processing liquid supply unit 130a and the second processing liquid supply unit 130b, respectively, and therefore, redundant description will be omitted to avoid redundancy.

[0167] As shown in Fig. 13, steps S110 and S120 are the same as those in Fig. 5, and therefore will not be described. After step S120, the process proceeds to step S130a.

[0168] In step S130a, the first processing liquid La is supplied to the upper surface Wt of the substrate W. Specifically, the first processing liquid supply unit 130a starts supplying the first processing liquid La to the upper surface Wt of the substrate W. Specifically, the control unit 102 controls the first processing liquid supply unit 130a to start supplying the first processing liquid La to the upper surface Wt of the substrate W. The process proceeds to step S160a.

[0169] In step S160a, the supply of the first processing liquid is stopped. Specifically, the first processing liquid supply unit 130a stops the supply of the first processing liquid to the upper surface Wt of the substrate W. Specifically, the control unit 102 controls the first processing liquid supply unit 130a to stop the supply of the first processing liquid La after a predetermined period has elapsed since the supply of the first processing liquid La was started. The process proceeds to step S130b.

[0170] In step S130b, the second processing liquid Lb is supplied to the upper surface Wt of the substrate W. Specifically, the second processing liquid supply unit 130b starts supplying the second processing liquid Lb to the upper surface Wt of the substrate W. Here, the supply of the second processing liquid starts simultaneously with the stop of the supply of the first processing liquid La to the substrate W. The process proceeds to step S140.

[0171] In step S140, the second treatment liquid Lb in the captured image is identified based on the captured image generated by the near-infrared imaging unit 150. The control unit 102 identifies the outer edge of the second treatment liquid Lb in the captured image based on the captured image. The control unit 102 may also identify the type of the second treatment liquid Lb in the captured image based on the captured image. The process proceeds to step S150f.

[0172] In step S150f, it is determined whether the second processing liquid Lb covers the entire upper surface Wt of the substrate W. Specifically, the control unit 102 determines whether the second processing liquid Lb covers the entire upper surface Wt of the substrate W based on the result of identifying the outer edge of the second processing liquid Lb.

[0173] If the second processing liquid Lb does not cover the entire upper surface Wt of the substrate W (No in step S150f), the process returns to step S140. As a result, the process of identifying the outer edge of the second processing liquid Lb and determining whether the second processing liquid Lb has covered the entire upper surface Wt of the substrate W is repeated until the second processing liquid Lb covers the entire upper surface Wt of the substrate W. On the other hand, if the second processing liquid Lb covers the entire upper surface Wt of the substrate W (Yes in step S150f), the process proceeds to step S150g.

[0174] In step S150g, the flow rate of the second processing liquid Lb supplied to the substrate W is reduced. The control unit 102 controls the second processing liquid supply unit 130b so as to reduce the flow rate of the second processing liquid Lb supplied to the substrate W by the second processing liquid supply unit 130b. Thereafter, the process proceeds to step S160b.

[0175] In step S160b, the supply of the second processing liquid Lb is stopped. Specifically, the second processing liquid supply unit 130b stops the supply of the second processing liquid Lb to the substrate W. Specifically, the control unit 102 controls the second processing liquid supply unit 130b to stop the supply of the second processing liquid Lb after a predetermined period has elapsed since the entire upper surface Wt of the substrate W has been replaced with the second processing liquid Lb. The process proceeds to step S170. Note that step S170 is similar to step S170 in FIG. 5.

[0176] According to this embodiment, the first processing liquid La and the second processing liquid Lb irradiated with near-infrared light are imaged by the near-infrared image capturing unit 150. Because the first processing liquid La and the second processing liquid Lb absorb near-infrared light relatively strongly, the outer edges of the first processing liquid La and the second processing liquid Lb can be identified with high accuracy. Furthermore, because the first processing liquid La and the second processing liquid Lb absorb near-infrared light in different ways, the types of the first processing liquid La and the second processing liquid Lb can be identified with high accuracy.

[0177] 5 to 13, the near-infrared image capturing unit 150 captures an image of the substrate W to which the processing liquid has been supplied, and near-infrared irradiation and imaging are performed during the period in which the processing liquid is being supplied to the substrate W, but this embodiment is not limited to this. The near-infrared image capturing unit 150 may capture an image of any region within the chamber 112, and near-infrared irradiation and imaging may be performed after the processing liquid has been supplied to the substrate W.

[0178] Next, the substrate processing steps in the substrate processing method of this embodiment will be described with reference to Figures 1 to 14. Figure 14 is a flow diagram of the substrate processing steps in the substrate processing method of this embodiment. The flow diagram of Figure 14 is similar to the flow diagram described above with reference to Figure 5, except that in step S160, after stopping the supply of the processing liquid, a suck back is performed, and step S120 (near-infrared irradiation / imaging) and step S150 (control) are performed after step S160, and therefore, duplicated explanations will be omitted to avoid redundancy.

[0179] In step S110, the substrate W is rotated while being held by the substrate holder 120. Specifically, the substrate holder 120 rotates the substrate W while holding the substrate W. At this time, the rotation speed of the substrate W is, for example, 10 rpm to 1500 rpm.

[0180] In step S130, the processing liquid is supplied to the substrate W. Specifically, the control unit 102 controls the processing liquid supply unit 130 so that the processing liquid supply unit 130 starts supplying the processing liquid to the substrate W.

[0181] In step S160, the supply of the processing liquid is stopped. Specifically, the control unit 102 stops the processing liquid supply unit 130 from supplying the processing liquid to the substrate W. Here, after the supply of the processing liquid is stopped, the processing liquid is sucked and sucked back into the pipe 132. The process proceeds to step S170.

[0182] In step S170, the rotation of the substrate W is stopped. Specifically, the control unit 102 controls the substrate holder 120 to stop the rotation of the substrate W. The process proceeds to step S120.

[0183] In step S120, near-infrared light source 140 irradiates pipe 132 and nozzle 136 with near-infrared light, and near-infrared imaging unit 150 captures an image of pipe 132 and nozzle 136 irradiated with near-infrared light to generate an image. Control unit 102 controls near-infrared light source 140 and near-infrared imaging unit 150 so that near-infrared light source 140 emits near-infrared light to pipe 132 and nozzle 136, and near-infrared imaging unit 150 captures an image of pipe 132 and nozzle 136 irradiated with near-infrared light. Note that near-infrared imaging unit 150 may capture an image of at least one of pipe 132 and nozzle 136, and near-infrared light source 140 may irradiate at least one of pipe 132 and nozzle 136 imaged by near-infrared imaging unit 150.

[0184] In step S140, the processing liquid in the captured image is identified based on the captured image generated by the near-infrared imaging unit 150. The control unit 102 identifies the processing liquid in the captured image based on the captured image. For example, the control unit 102 identifies the outer edge of the processing liquid in the captured image based on the captured image. This makes it possible to identify the position of the processing liquid that has been sucked back in the pipe 132 and the nozzle 136. The control unit 102 may also identify the type of processing liquid in the captured image based on the captured image. The process proceeds to step S150.

[0185] In step S150, the control unit 102 controls the processing liquid in the chamber 112. In step S140, the near-infrared image capturing unit 150 captured images of the piping 132 and the nozzle 136 irradiated with near-infrared light, and therefore, the processing liquid in the piping 132 and the nozzle 136 can be captured with high accuracy. For example, if the suck-back of the processing liquid in step S160 is insufficient, the control unit 102 sucks back the processing liquid again.

[0186] According to this embodiment, the near-infrared image capturing unit 150 captures an image of the pipe 132 and the nozzle 136 irradiated with near-infrared light from the near-infrared light source 140, and therefore it is possible to identify with high accuracy the processing liquid inside the pipe 132 and the nozzle 136. For example, by detecting from the image captured by the near-infrared image capturing unit 150 that the processing liquid has not been sufficiently sucked back, it is possible to perform the suck-back process of the processing liquid again.

[0187] The embodiments of the present invention have been described above with reference to the drawings. However, the present invention is not limited to the above embodiments and can be embodied in various forms without departing from the spirit and scope of the present invention. Furthermore, various inventions can be formed by appropriately combining multiple components disclosed in the above embodiments. For example, some components may be omitted from all components shown in the embodiments. Furthermore, components from different embodiments may be appropriately combined. The drawings mainly show each component in a schematic manner to facilitate understanding. The thickness, length, number, spacing, etc. of each component shown may differ from the actual thickness, length, number, spacing, etc. of each component shown in the above embodiments due to the convenience of drawing. Furthermore, the materials, shapes, dimensions, etc. of each component shown in the above embodiments are merely examples and are not particularly limited. Various modifications are possible within a scope that does not substantially deviate from the effects of the present invention. [Industrial Applicability]

[0188] The present invention is suitably used in a substrate processing apparatus and a substrate processing method. [Explanation of symbols]

[0189] 100 Substrate processing apparatus 110 Substrate processing unit 112 Chamber 120 Board holding part 130 Processing liquid supply unit 140 Near-infrared light source 150 Near-infrared imaging unit W substrate

Claims

1. A chamber; a substrate holder that holds and rotates a substrate within the chamber; a processing liquid supply unit that supplies a processing liquid to an upper surface of the substrate; a near-infrared light source that irradiates the inside of the chamber with near-infrared light; a near-infrared image capturing unit that captures an image of the treatment liquid in the chamber irradiated with near-infrared light from the near-infrared light source; a control unit that identifies an outer edge of the processing liquid in the chamber based on the captured image; Equipped with The control unit identifies the type of the processing liquid based on the captured image.

2. The substrate processing apparatus according to claim 1 , wherein the near-infrared light source and the near-infrared image capturing unit are disposed inside the chamber.

3. The substrate processing apparatus according to claim 1 , wherein the near-infrared light source and the near-infrared image capturing unit are disposed outside the chamber.

4. A chamber, a substrate holder that holds and rotates a substrate within the chamber; a processing liquid supply unit that supplies a processing liquid to an upper surface of the substrate; a near-infrared light source that irradiates the inside of the chamber with near-infrared light; a near-infrared image capturing unit that captures an image of the treatment liquid in the chamber irradiated with near-infrared light from the near-infrared light source; a control unit that identifies an outer edge of the processing liquid in the chamber based on the captured image; Equipped with The substrate processing apparatus, wherein the near-infrared light source and the near-infrared imaging unit are disposed outside the chamber.

5. The substrate processing apparatus according to claim 3 , wherein the near-infrared light source and the near-infrared image capturing unit are arranged at positions facing each other across the chamber.

6. The substrate processing apparatus according to claim 1 , wherein the near-infrared image capturing unit captures an image of the processing liquid supplied from the processing liquid supply unit onto the upper surface of the substrate.

7. The substrate processing apparatus according to claim 6 , wherein the control unit determines whether the processing liquid covers the entire upper surface of the substrate based on the captured image.

8. The processing liquid supply unit a first processing liquid supply unit that supplies a first processing liquid to the substrate; a second processing liquid supply unit that supplies a second processing liquid to the substrate; Including, 8. A substrate processing apparatus according to claim 1, wherein after the supply of the first processing liquid to the substrate from the first processing liquid supply unit is stopped and the supply of the second processing liquid to the substrate from the second processing liquid supply unit is started, the control unit determines whether the second processing liquid covers the entire top surface of the substrate based on the captured image.

9. the processing liquid supply unit includes a pipe and a nozzle; The substrate processing apparatus according to claim 1 , wherein the near-infrared image capturing unit captures an image of the processing liquid located in at least one of the pipe and the nozzle.

10. holding and rotating a substrate within a chamber; supplying a processing liquid to an upper surface of the substrate in the chamber; irradiating the interior of the chamber with near-infrared light; generating a captured image of the processing liquid in the chamber irradiated with the near-infrared light; identifying an outer edge of the processing liquid in the chamber based on the captured image; identifying the type of the treatment liquid based on the captured image; A substrate processing method comprising:

11. The substrate processing method according to claim 10 , wherein the step of generating the captured image comprises capturing an image of the processing liquid supplied to the upper surface of the substrate.

12. The method of claim 11 , further comprising determining whether the processing liquid covers the entire top surface of the substrate.

13. The step of supplying the treatment liquid includes: supplying a first processing liquid to the substrate; supplying a second processing liquid to the substrate; Including, 13. The substrate processing method according to claim 10, further comprising a step of stopping the supply of the first processing liquid to the substrate, and then starting the supply of the second processing liquid to the substrate, and then determining, based on the captured image, whether the second processing liquid covers the entire top surface of the substrate.

14. The substrate processing method according to claim 10 , wherein in the step of generating the captured image, an image of the processing liquid located in at least one of a pipe and a nozzle through which the processing liquid flows is captured.

Images