Substrate processing system and etching device

Abstract

To perform good etching processing while preventing a bowing shape.SOLUTION: Provided is a substrate processing system comprising: an etching device that supplies gas containing carbon tetrafluoride, generates plasma from the gas, and etches a silicon-containing film on a substrate by the plasma through a mask on the silicon-containing film; and a deposition device that is a device different from the etching device, supplies gas containing carbon, and forms a carbon-containing film on the etched silicon-containing film. The etching device executes a step including a first etching step of etching the silicon-containing film halfway by the plasma, and a second etching step of further etching, by the plasma, the silicon-containing film on which the carbon-containing film is formed. The deposition device executes a deposition step of forming the carbon-containing film on the silicon-containing film after the first etching step without generating plasma.SELECTED DRAWING: Figure 4

Description

[Technical Field]

[0001] The present invention relates to a substrate processing system. and etching equipment Regarding. [Background technology]

[0002] In plasma etching of contact holes with a high aspect ratio, as the hole bottom becomes deeper, it becomes more difficult for ions in the plasma to reach the bottom of the hole, resulting in etching of not only the bottom but also the sides of the contact hole. As a result, a bowing shape occurs in which the diameter (CD value) of the lower side of the hole (hereinafter referred to as the "Critical Dimension") is larger than the diameter of the upper side of the hole. Therefore, a technology has been proposed to repair the shape of the pattern by depositing a desired film on the sidewalls of the formed pattern after hole etching is completed (see, for example, Patent Document 1). [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Application Laid-Open No. 2014-17438 Summary of the Invention [Problem to be solved by the invention]

[0004] However, in the method of forming a film after etching is completed, as the hole bottom becomes deeper, fewer ions in the plasma reach the bottom of the hole, resulting in a lower etching rate, which may result in a lower aspect ratio and make it impossible to obtain the desired semiconductor device characteristics.

[0005] In response to the above problem, one aspect of the present invention has an object to perform a good etching process while suppressing the bowing shape. [Means for solving the problem]

[0006] In order to solve the above problems, according to one aspect, a film forming apparatus and an etching apparatus are provided, and the film forming apparatus supplies a film forming gas and forms a silicon-containing film on a substrate. recess At least the side walls of membrane The etching apparatus is configured to supply an etching gas and form a plasma from the etching gas, membrane was formed recess A substrate processing system is provided that is configured to etch the bottom portion of the [Effects of the Invention]

[0007] According to one aspect, it is possible to perform a good etching process while suppressing the bowing shape. [Brief explanation of the drawings]

[0008] [Figure 1] FIG. 1 is a diagram showing an example of the configuration of a substrate processing system according to an embodiment. [Figure 2] FIG. 2 is a diagram showing a longitudinal section of PC1 and PC2 according to an embodiment. [Figure 3] FIG. 1 is a diagram for explaining a bowing shape. [Figure 4] 1A to 1C are diagrams illustrating a substrate processing method according to an embodiment. [Figure 5] FIG. 2 is a diagram showing an example of a deposited carbon film according to an embodiment. [Figure 6] 10A to 10C are diagrams showing an example of an effect of the substrate processing method according to an embodiment. [Figure 7] 10A to 10C are diagrams illustrating a substrate processing method according to a first modified example of an embodiment. [Figure 8] FIG. 10 is a diagram showing an example of an effect of the substrate processing method according to the first modified example of the embodiment. [Figure 9] FIG. 10 is a diagram showing an example of an effect of the substrate processing method according to the second modified example of the embodiment. DETAILED DESCRIPTION OF THE INVENTION

[0009] Hereinafter, embodiments of the present invention will be described with reference to the drawings. In this specification and the drawings, substantially identical components are designated by the same reference numerals, and redundant description will be omitted.

[0010] [Example of substrate processing system configuration] First, a configuration example of a substrate processing system 1 according to one embodiment of the present invention will be described with reference to Fig. 1. Fig. 1 shows a configuration example of a substrate processing system 1 according to one embodiment. The substrate processing system 1 has a process chamber PC (hereinafter simply referred to as "PC") 1 for processing substrates in-situ, and a process chamber PC2 for processing substrates ex-situ. PC1 and PC2 are separate chambers.

[0011] PC1 and PC2 are connected via a transfer chamber TC (hereinafter referred to as "TC") and a transport mechanism 2. PC1 and TC, and TC and transport mechanism 2 are connected via gate valves G that can be opened and closed. Because the insides of PC1 and TC are in a reduced pressure state, by loading and unloading substrates by opening and closing each gate valve G, the inside of PC1 is isolated from the atmosphere and maintained at a predetermined vacuum level.

[0012] The TC is provided with a transport device 52 that grips and transports substrates in and out. The transport device 52 has a rotating and extending / retracting part 53 that can rotate and extend, and two blades 54a and 54b that hold the substrate at the tips of the rotating and extending part 53. The blades 54a and 54b are attached to the rotating and extending part 53 so that they face in opposite directions.

[0013] The transport mechanism 2 transports the substrate between the TC and the PC 2. The transport mechanism 2 may be, for example, a mechanism that can carry the substrate on a tray or the like and travel using rails or the like.

[0014] The PC1 functions as an etching device that generates plasma and etches a film on a substrate by the action of the plasma, and can also function as an ashing device that ashes a film on a substrate by the action of the plasma.

[0015] PC2 is a film formation device that forms a film on a substrate without using plasma. In this embodiment, PC2 functions as a thermal CVD (Chemical Vapor Deposition) device that forms a carbon film on a substrate by heat. However, PC2 is not limited to a thermal CVD device, and may be any device that can form a uniform film on the inner wall (at least the side wall) of the pattern on the substrate etched by PC1.

[0016] The substrate processing system 1 has a control unit 40 that controls etching, film formation, ashing, and substrate transport processes. A storage unit 42 stores control programs for executing processes such as etching, film formation, ashing, and transport processes, as well as process recipes in which various process conditions are set. The storage unit 42 may be a hard disk or a portable storage medium such as a CD-ROM, DVD, or flash memory. The storage unit 42 may also be configured to transmit process recipes as needed from another device, for example, via a dedicated line.

[0017] The control unit 40 executes processes such as etching, film formation, ashing, and transport according to process recipes stored in the storage unit 42 in response to instructions from a user via a user interface 41, for example.

[0018] [PC1 / PC2 configuration example] (PC1: Etching equipment) An example configuration of PC1 and PC2 according to an embodiment will be briefly described with reference to FIG. 2. FIG. 2 shows a longitudinal cross section of a substrate processing system 1 (including PC1 and PC2) according to an embodiment. However, FIG. 2 shows only one example configuration of PC1 and PC2, and the present invention is not limited to this configuration. For example, PC1 is an example configuration of a capacitively coupled plasma (CCP) apparatus, but the present invention is applicable not only to such apparatus but also to other substrate processing apparatuses. Other substrate processing apparatuses include an inductively coupled plasma (ICP), a chemical vapor deposition (CVD) apparatus using a radial line slot antenna, a helicon wave plasma (HWP), and an electron cyclotron resonance plasma (ECR).

[0019] PC1 and TC process and transport substrates under reduced pressure, while transport mechanism 2 and PC2 process and transport substrates under atmospheric pressure. PC1 has a processing container made of aluminum or the like with an anodized surface, and inside is provided a mounting table 12 that supports a substrate W. A high-frequency power source 14 is connected to the mounting table 12, and high-frequency power of a predetermined frequency (e.g., 60 MHz) for generating plasma is supplied from the high-frequency power source 14.

[0020] A shower head 16 is provided on the ceiling surface of the PC 1. The shower head 16 supplies gas in a shower-like manner from a plurality of gas holes 18 formed in the lower part. In this embodiment, a gas containing fluorocarbon is supplied, and the silicon-containing film on the substrate is etched by the generated plasma.

[0021] The etching gas may be a single fluorocarbon (CF) gas or a mixed gas containing a fluorocarbon gas. The etching gas may contain hexafluoro-1,3-butadiene (C4F6) gas as a fluorocarbon-containing gas.

[0022] After etching the silicon-containing film on the substrate W in the PC1, the substrate W is transported to the PC2 using the transport device 52 and the transport mechanism 2 of the TC.

[0023] (PC2: Thermal CVD equipment) The PC2 has a cylindrical outer wall 22 with a ceiling and an inner wall 24 provided inside the outer wall 22. The outer wall 22 and the inner wall 24 are made of, for example, quartz. A processing chamber 30 inside the inner wall 24 accommodates a plurality of substrates W. The PC2 performs film formation processing on the plurality of substrates all at once. The outer wall 22 and the inner wall 24 are separated from each other by an annular space 26, and each is joined at its lower end to a base material 28.

[0024] In this embodiment, a gas containing carbon (C) is supplied as a film forming gas. The supplied gas containing carbon flows from the bottom to the top of the processing chamber 30, is sucked into the annular space 26, and is exhausted to the outside.

[0025] The deposition gas may be a single gas containing carbon or a mixed gas containing carbon. The deposition gas may be ethylene (C2H4) gas or other carbon (C x H y The deposition gas may contain chlorine (Cl2) gas as a thermal decomposition temperature lowering gas. The deposition gas may also contain an inert gas such as nitrogen (N2) gas. PC2 thermally decomposes the deposition gas to deposit a carbon-containing film on the silicon-containing film on the substrate. PC2 may be a single-wafer deposition apparatus.

[0026] The configuration examples of PC1 and PC2 have been described above. According to the substrate processing system 1 of this embodiment, first, the substrate W is transported to PC1, where it is etched. Next, the substrate W is transported to PC2, where a carbon film is formed. Next, the substrate is transported to PC1, where it is etched again. Finally, the carbon film is removed in PC1.

[0027] [Boeing shape] Next, the bow shape formed in the etching pattern will be described with reference to Fig. 3. As shown in Fig. 3(a), a silicon oxide film (SiO2) 126, a silicon nitride film (SiN) 127, and a polysilicon mask 128 are formed on a silicon substrate 125.

[0028] In this embodiment, a silicon oxide film (SiO2) is taken as an example of a silicon-containing film to be etched. However, the silicon-containing film is not limited to this, and any silicon-containing oxide film (SiO x ), a silicon nitride film (SiN), or a laminated film of a silicon-containing oxide film and a silicon nitride film. The mask material may be an amorphous carbon mask or a metal-containing mask.

[0029] The polysilicon mask 128 has a desired hole or line pattern formed therein. When etching the silicon oxide film 126 into a desired pattern such as holes, the deeper the bottom of the etched hole, the less plasma radicals reach the bottom of the hole, resulting in etching of not only the bottom but also the sides of the contact hole. As a result, a bowing shape occurs, as shown in FIG. 3(b), in which the CD value at the bottom of the hole (hereinafter referred to as the bowing CD value, or "B" or "Bowing CD") is larger than the top CD value at the top of the hole (hereinafter referred to as "T" or "Top CD"). When the etching pattern has a bowing shape, it becomes more difficult to obtain good device characteristics compared to the vertical etching pattern shown in FIG. 3(a).

[0030] Therefore, the substrate processing system 1 according to this embodiment realizes a substrate processing method that can perform good etching processing while suppressing the bowing shape. Hereinafter, the substrate processing method executed by the substrate processing system 1 according to this embodiment will be described with reference to FIG.

[0031] [Substrate processing method] 4 shows a substrate processing method according to this embodiment. [a] in FIG. 4 shows a state before etching of a silicon oxide film 126 on a silicon substrate 125. A silicon oxide film 126, a silicon nitride film 127, and a polysilicon mask 128 are formed on the silicon substrate 125. The polysilicon mask 128 may be an amorphous silicon mask or a metal-containing mask. The silicon nitride film 127 may be omitted.

[0032] (half etching) In the substrate processing method according to this embodiment, first, the silicon substrate 125 is loaded into the PC 1. The PC 1 etches the silicon nitride film 127 and the silicon oxide film 126. At this time, as shown in FIG. 4[b], the PC 1 etches the silicon oxide film 126 partway (first etching step). In this case, "partway etching" does not necessarily mean etching approximately halfway through the silicon oxide film 126, but can mean etching the silicon oxide film 126 until a bowing shape occurs (while bowing does not occur).

[0033] An example of etching process conditions is a pressure of 2.66 Pa, a high frequency power HF frequency of 60 MHz, a power of 1200 W, and a mixed gas of C4F6 / C4F8 / Ar / O2 gas species.

[0034] (Carbon film formation) Next, the substrate 125 is carried out from PC1 and carried into PC2. As shown in FIG. 4[c], PC2 deposits a carbon film 130 on the etched silicon oxide film 126. As a result, the carbon film 130 is deposited uniformly on the inner wall of the pattern formed on the silicon oxide film 126 (film deposition process). Note that the film deposited on the silicon oxide film 126 is not limited to the carbon film 130, and may be a carbon-containing film.

[0035] An example of the process conditions for forming the carbon film is a pressure of 997 Pa, a temperature of 400° C., and a mixed gas of C2H4 / Cl2.

[0036] 5 shows an example of a carbon film formed as PC2 using the thermal CVD apparatus according to this embodiment. In graph [A] of FIG. 5, the thickness of the carbon film 130 is 4.7 nm when the film formation time is 50 minutes, and in graph [B] of FIG. 5, the thickness of the carbon film 130 is 10.3 nm when the film formation time is 90 minutes. In both cases shown in [A] and [B] of the carbon film 130 formed on the silicon oxide film 126 in FIG. 5, it can be seen that the carbon film 130 has a uniform thickness on the sidewalls and bottom wall of the etching pattern of the silicon oxide film 126.

[0037] Furthermore, according to the relationship between the film formation time and the thickness of the carbon film in the graph of FIG. 5, the carbon film 130 according to this embodiment only needs to have a thickness of about 1 to 2 nm, so the film formation time is about 30 minutes.

[0038] 4[c] may be performed in-situ using the PC 1. However, when forming a carbon film 130 with a thickness of approximately 1 to 2 nm, it is important that the carbon film 130 be formed uniformly.

[0039] In contrast, when the carbon film 130 is formed using plasma in PC1, the carbon film becomes thinner at the bottom side of the etching pattern than at the top side, due to reasons such as the difficulty of ions penetrating the bottom side of the etching pattern, making it difficult to form a uniform carbon film 130 on the silicon oxide film 126. Therefore, in the film formation step of Fig. 4[c], it is preferable to form the carbon film 130 in a non-plasma (no plasma is used) environment.

[0040] (Full etching) Returning to Figure 4, after the film formation, the substrate 125 is carried out from PC2 and carried into PC1. As shown in Figure 4[d], PC1 further etches the silicon oxide film 126 (second etching step). In the full etching, the carbon film 130 protects the sidewalls of the silicon oxide film 126, preventing a bowing shape from occurring in the etching pattern.

[0041] The etching process conditions of Fig. 4[d] may be the same as the etching process conditions of Fig. 4[b]. The etching process conditions of Fig. 4[d] may be different from the etching process conditions of Fig. 4[b], as long as the etching process conditions are conditions for supplying a gas containing fluorocarbon into PC1.

[0042] In the second etching step, PC1 may etch the silicon oxide film 126 until the underlying layer is exposed, thereby completing the etching of the silicon oxide film 126. PC1 and PC2 may complete the etching of the silicon oxide film 126 by repeating the second etching step [d] and the film forming step [c] as a set multiple times.

[0043] (Ashing) 4[e], the PC1 performs an ashing process after the second etching step to remove the carbon film 130 (second ashing step). For the ashing, oxygen plasma generated from oxygen gas may be used.

[0044] The substrate processing method using the substrate processing system 1 according to this embodiment has been described above. Next, an example of the effect of the substrate processing method according to this embodiment will be described with reference to FIG.

[0045] [Example of effect] FIG. 6 shows an example of the effect of performing a substrate processing method according to one embodiment. FIG. 6[b] shows a pattern after half etching (FIG. 4[b]), FIG. 6[f] shows a pattern after full etching when no carbon film is formed, and FIG. 6[e] shows a pattern after full etching when a 1-nm-thick carbon film is formed (FIG. 4[d]). FIG. 6[h] shows a pattern after full etching after a 1-nm-thick carbon film is formed and further treatment with monosilane (SiH4). Note that FIG. 6 shows an example in which no silicon nitride film 127 is stacked.

[0046] According to this, the pattern after half etching in FIG. 6[b] had a top CD value of 43.8 nm and a bowing CD value of 46.9 nm.

[0047] On the other hand, the pattern after full etching without a carbon film (Fig. 6[f]) had a top CD value of 49.7 nm and a bowing CD value of 56.2 nm. On the other hand, the pattern after full etching with a 1 nm thick carbon film (Fig. 6[e]) had a top CD value of 48.9 nm and a bowing CD value of 52.8 nm.

[0048] Furthermore, in the case of forming a 1 nm thick carbon film (Fig. 6[h]) and performing treatment with monosilane (SiH4), the pattern after full etching had a top CD value of 48.7 nm and a bowing CD value of 51.4 nm.

[0049] From the above results, it was found that the bowing CD value when a carbon film was formed was improved compared to the bowing CD value when no carbon film was formed. In other words, it was found that by forming a carbon film during etching, the carbon film acts as a protective film and can suppress the bowing shape that is formed during etching.

[0050] Furthermore, it was found that the bowing CD value when SiH4 treatment was performed after the carbon film deposition was further improved compared to the bowing CD value when no carbon film was deposited and the bowing CD value when a 1 nm thick carbon film was deposited. This suggests that the silicon-containing film formed on the carbon film acted as a protective film together with the carbon film, suppressing the bowing shape.

[0051] The treatment after the carbon film formation may be a single gas of monosilane (SiH4), or a mixed gas containing monosilane and a dilution gas (N2 gas, H2 gas, or the like).

[0052] As described above, according to the substrate processing method of this embodiment, by inserting the carbon film deposition step during the etching step, the carbon film 130 protects the silicon oxide film 126 in the subsequent etching step, and the bowing shape can be suppressed. As a result, a vertical etching shape can be formed, and good device characteristics can be obtained.

[0053] [Variation 1] Next, a substrate processing method according to Modification 1 of the present embodiment will be described with reference to Fig. 7 and Fig. 8. Fig. 7 shows the substrate processing method according to Modification 1 of the present embodiment. Fig. 8 shows an example of the effect obtained when the substrate processing method according to Modification 1 of the embodiment is executed.

[0054] The substrate processing method according to variant example 1 in FIG. 7 differs from the substrate processing method according to this embodiment in FIG. 4 in that an ashing step shown in FIG. 4[g] is provided between the half-etching step shown in FIG. 4[b] and the film-forming step shown in FIG. 4[c].

[0055] As shown in Fig. 7[b], after half-etching the silicon oxide film 126, polymer reaction products 131 formed by etching adhere to the polysilicon mask 128. Therefore, it is preferable to remove the adhered reaction products 131 in the ashing step shown in Fig. 4[g], and then perform the carbon film deposition step shown in Fig. 7[c]. Oxygen plasma generated from oxygen gas may be used in the ashing steps shown in [g] and [e].

[0056] According to this, by removing the reaction product 131 adhering to the polysilicon mask 128 before film formation, the carbon film can be formed more uniformly in FIG. 4[c].

[0057] [Example of effect] An example of the effect of the substrate processing method according to the first modification of the present embodiment and the effect depending on the thickness of the carbon film will be described with reference to Fig. 8. Note that Fig. 8 shows an example in which a silicon nitride film 127 is stacked.

[0058] "Case 1" in the leftmost diagram in FIG. 8 shows the pattern after the ashing (first ashing step) shown in FIG. 7[g] is performed after the half etching (200 seconds) shown in FIG. 7[b].

[0059] "Case 2" shows the pattern after ashing was performed after full etching (350 seconds) without half etching.

[0060] "Case 3" shows the pattern after half etching (200 seconds) → ashing → 1 nm carbon film deposition → full etching (150 seconds) → ashing.

[0061] "Case 4" shows the pattern after half etching (200 seconds) → ashing → 2 nm carbon film deposition → full etching (150 seconds) → ashing.

[0062] According to this, the top CD values ​​were 55.6 nm in case 2, 52.9 nm in case 3, and 54.2 nm in case 4. In contrast, the bowing CD values ​​were 65.6 nm in case 2, 58.2 nm in case 3, and 57.5 nm in case 4.

[0063] This shows that when the carbon film 130 is formed to a thickness of 1 nm or more, the bowing shape can be suppressed compared to when no carbon film is formed.

[0064] It was also found that when the carbon film 130 was formed to a thickness of 2 nm, the bowing shape could be more reliably suppressed than when the carbon film 130 was formed to a thickness of 1 nm.

[0065] As described above, according to the substrate processing method of the first modification of this embodiment, the reaction product 131 adhering to the polysilicon mask 128 can be removed by performing ashing after half etching. This allows a more uniform carbon film to be formed on the inner wall of the etching pattern in the film formation step after ashing. As a result, bowing can be more effectively suppressed in the subsequent etching step.

[0066] [Variation 2] Next, a substrate processing method according to Modification 2 of this embodiment will be described with reference to Fig. 9. Fig. 9 shows an example of the effect obtained when the substrate processing method according to Modification 2 of this embodiment is executed. In the substrate processing methods according to the above embodiment and Modification 1, a carbon film is formed as a protective film, but in the substrate processing method according to Modification 2, a silicon film is formed instead of a carbon film.

[0067] Specifically, after the half-etching step shown in Fig. 7[b] and the ashing step shown in Fig. 7[g] are performed in order, a silicon film deposition step is performed instead of the carbon film deposition step shown in Fig. 7[c]. This step forms a silicon protective film in place of the carbon film 130 shown in Fig. 7[c]. Thereafter, a full-etching step shown in Fig. 7[d] is performed.

[0068] The results of executing the substrate processing method according to Modification 2 are shown in FIG. 9. The line just before the last line of the table in FIG. 9 lists the bowing CD values ​​after half etching and full etching when no protective film is formed, and the bowing CD values ​​after full etching when a protective film is formed. The results for cases in which a protective film is formed are shown for cases in which a carbon film with a thickness of "2 nm" and "3 nm" is formed, and for cases in which a silicon film with a thickness of "3 nm" is formed. The last line of the table in FIG. 9 also lists the difference between the bowing CD value after full etching when no protective film is formed and the bowing CD value after full etching when a protective film is formed.

[0069] An example of the process conditions for forming a silicon film is a pressure of 133 Pa (1 Torr), a temperature of 380° C., and a gas mixture of Si 2 H 6 / N 2 .

[0070] This shows that when a carbon film or silicon film is formed as a protective film after half etching and then full etching is performed, bowing can be suppressed compared to when full etching is performed without forming a protective film.

[0071] Furthermore, in the results of Figure 9, when a 3 nm thick carbon film was formed as a protective film after half etching, bowing hardly occurred. Also, in the results of Figure 9, when a 2 nm thick carbon film was formed as a protective film, the bowing suppression effect was equivalent to when a 3 nm thick silicon film was formed as a protective film.

[0072] From the above, it can be seen that both the carbon film and the silicon film can suppress bowing. However, when considering throughput, it can be seen that forming a carbon film as a protective film can suppress bowing more effectively than forming a silicon film as a protective film.

[0073] In the substrate processing method according to the second modification, a single layer of silicon film is formed as a protective film instead of a carbon film, but this is not limiting. For example, two or more layers of a laminated film of carbon film and silicon film may be formed as a protective film. In this case, the carbon film may be formed first and the silicon film may be formed later, or the silicon film may be formed first and the carbon film may be formed later. Furthermore, the film formation process of the laminated film of carbon film and silicon film can be performed continuously in the same chamber of PC2 shown in FIG. 1 by changing process conditions such as gas species.

[0074] In addition, in variant example 2, PC2 may also be treated with monosilane (SiH4) single gas or a mixed gas containing monosilane after the film formation process of forming a silicon film or a mixed film of a silicon film and a carbon film and before full etching.

[0075] The substrate processing system and substrate processing method have been described above using the above-mentioned embodiments, but the substrate processing system and substrate processing method according to the present invention are not limited to the above-mentioned embodiments, and various modifications and improvements are possible within the scope of the present invention.

[0076] Furthermore, the substrate processed by the substrate processing system according to the present invention may be a wafer, a large substrate for a flat panel display, or a substrate for an EL element or a solar cell.

[0077] The following is a note: (Appendix 1) an etching apparatus that supplies a gas containing a fluorocarbon, generates plasma from the gas, and etches a silicon-containing film on a substrate with the plasma through a mask on the silicon-containing film; a film formation apparatus that is different from the etching apparatus and that supplies a gas containing carbon and forms a carbon-containing film on the etched silicon-containing film; The etching apparatus includes: a first etching step of partially etching the silicon-containing film with plasma; a second etching step of further etching the silicon-containing film on which the carbon-containing film has been formed by using plasma; the film formation apparatus performs a film formation step of forming a carbon-containing film on the silicon-containing film after the first etching step without generating plasma. Substrate processing system. (Appendix 2) the etching apparatus performs a first ashing step of ashing reaction products adhering to the mask after the first etching step; the film forming apparatus forms a carbon-containing film on the silicon-containing film after the ashing in the film forming step; 2. The substrate processing system of claim 1. (Appendix 3) the film forming apparatus forms a carbon-containing film on at least a side wall of a pattern formed in the silicon-containing film in the film forming step; 3. The substrate processing system according to claim 1 or 2. (Appendix 4) The etching apparatus performs a second ashing step after the second etching step. 4. A substrate processing system according to any one of claims 1 to 3. (Appendix 5) an etching apparatus that supplies a gas containing a fluorocarbon, generates plasma from the gas, and etches a silicon-containing film on a substrate with the plasma through a mask on the silicon-containing film; a film formation apparatus that is an apparatus different from the etching apparatus and that supplies a gas containing carbon or silicon and forms at least one of a carbon-containing film and a silicon film on the etched silicon-containing film, The etching apparatus includes: a first etching step of partially etching the silicon-containing film with plasma; a second etching step of further etching the silicon-containing film on which at least one of the carbon-containing film and the silicon film has been formed, using plasma; the film formation apparatus performs a film formation step of forming at least one of a carbon-containing film and a silicon film on the silicon-containing film after the first etching step without generating plasma. Substrate processing system. (Appendix 6) the etching apparatus performs a first ashing step of ashing reaction products adhering to the mask after the first etching step; the film forming apparatus forms at least one of a carbon-containing film and a silicon film on the silicon-containing film after the ashing in the film forming step; 6. The substrate processing system of claim 5. (Appendix 7) the film forming apparatus forms at least one of a carbon-containing film and a silicon film on at least a sidewall of a pattern formed in the silicon-containing film in the film forming step; Supplementary note 5 is the substrate processing system according to claim 6. (Appendix 8) the etching apparatus etches the silicon-containing film until it penetrates the silicon-containing film in the second etching step. 8. A substrate processing system according to any one of claims 1 to 7. (Appendix 9) The film forming apparatus performs a treatment using a single gas of monosilane (SiH4) or a mixed gas containing monosilane after the film forming process and before the second etching process. 9. A substrate processing system according to any one of claims 1 to 8. (Appendix 10) A substrate processing method for processing a substrate using an etching apparatus that supplies a gas containing fluorocarbon, generates plasma from the gas, and etches a silicon-containing film on a substrate with the plasma through a mask on the silicon-containing film, and a film formation apparatus that is an apparatus different from the etching apparatus and supplies a gas containing carbon, and forms a carbon-containing film on the etched silicon-containing film, the method comprising: a first etching step of partially etching the silicon-containing film with plasma using the etching device; a film formation step of forming a carbon-containing film on the silicon-containing film after the first etching step without generating plasma by the film formation apparatus; a second etching step of further etching the silicon-containing film on which the carbon-containing film has been formed by the etching apparatus with plasma; A substrate processing method comprising: (Appendix 11) A substrate processing method for processing a substrate using an etching apparatus that supplies a gas containing fluorocarbon, generates plasma from the gas, and etches a silicon-containing film on a substrate with the plasma through a mask on the silicon-containing film, and a film formation apparatus that is an apparatus different from the etching apparatus and supplies a gas containing carbon or silicon, and forms at least one of a carbon-containing film and a silicon film on the etched silicon-containing film, the method comprising: a first etching step of partially etching the silicon-containing film with plasma using the etching device; a film formation step of forming at least one of a carbon-containing film and a silicon film on the silicon-containing film after the first etching step by using the film formation apparatus without generating plasma; a second etching step of further etching the silicon-containing film on which at least one of the carbon-containing film and the silicon film has been formed by the etching apparatus using plasma; A substrate processing method comprising: [Explanation of symbols]

[0078] 1: Substrate processing system 2: Transport mechanism 12: Mounting table 14:High frequency power supply 16: Shower head 22: Exterior wall 24:Inner wall 30: Processing room 40: Control unit 42: Storage part 52:Transportation device 125: Silicon substrate 126: Silicon oxide film 127: Silicon nitride film 128: Polysilicon mask 130: Carbon film 131: Reaction products PC1, PC2: Process chambers TC: Transfer chamber T: Top CD B:Bowing CD

Claims

1. Equipped with a film forming device and an etching device, the film formation apparatus is configured to supply a film formation gas and form a film on at least a sidewall of a recess formed in a silicon-containing film on a substrate without generating plasma; the etching apparatus is configured to supply an etching gas and etch the bottom of the recess having at least the film formed on the side wall thereof with plasma generated from the etching gas. Substrate processing system.

2. Equipped with a film forming device and an etching device, the film formation apparatus is configured to supply a film formation gas and form a film on at least a sidewall of a recess formed in a silicon-containing film on a substrate by thermal CVD; the etching apparatus is configured to supply an etching gas and etch the bottom of the recess having at least the film formed on the side wall thereof with plasma generated from the etching gas. Substrate processing system.

3. Equipped with a film forming device and an etching device, the film formation apparatus is configured to supply a film formation gas and form a film on at least a sidewall of a recess formed in a silicon-containing film on a substrate; the etching apparatus is configured to supply an etching gas containing a fluorocarbon gas and etch at least the bottom of the recess having a film formed on a side wall thereof with plasma generated from the etching gas. Substrate processing system.

4. Equipped with a film forming device and an etching device, the film formation apparatus is configured to supply a film formation gas containing a hydrocarbon gas and form a film on at least a sidewall of a recess formed in a silicon-containing film on a substrate; the etching apparatus is configured to supply an etching gas and etch the bottom of the recess having at least the film formed on the side wall thereof with plasma generated from the etching gas. Substrate processing system.

5. Equipped with a film forming device and an etching device, the film formation apparatus is configured to supply a film formation gas and form a film on at least a sidewall of a recess formed in a silicon-containing film on a substrate; the etching apparatus is configured to supply an etching gas and etch the bottom of the recess having at least a film formed on a side wall thereof with plasma generated from the etching gas; the silicon-containing film is a silicon-containing oxide film, a silicon nitride film, or a laminated film of a silicon-containing oxide film and a silicon nitride film; Substrate processing system.

6. a transfer chamber including a transfer device that supports the substrate and transfers the substrate between the film formation device and the etching device; The substrate processing system according to any one of claims 1 to 5.

7. The thickness of the film is 1 nm or more and 2 nm or less. The substrate processing system according to claim 1 .

8. the etching apparatus is a capacitively coupled plasma apparatus, an inductively coupled plasma apparatus, a CVD apparatus using a radial line slot antenna, a helicon wave excited plasma apparatus, or an electron cyclotron resonance plasma apparatus; The substrate processing system according to any one of claims 1 to 7.

9. The deposition gas contains carbon. The substrate processing system according to claim 1 .

10. The deposition gas contains chlorine gas or an inert gas. The substrate processing system according to any one of claims 1 to 9.

11. The film forming apparatus is a single-wafer film forming apparatus. The substrate processing system according to any one of claims 1 to 10.

12. the substrate comprises a polysilicon mask, an amorphous carbon mask, or a metal-containing mask on the silicon-containing film; The substrate processing system according to any one of claims 1 to 11.

13. Equipped with a film forming device and an etching device, The film forming apparatus includes: a deposition chamber and a deposition gas supply unit; a film formation gas is supplied from the film formation gas supply unit into the film formation chamber, and a film is formed on at least a sidewall of a pattern on a substrate without generating plasma, the pattern being formed on a silicon-containing film; The etching apparatus includes: an etching chamber, an etching gas supply unit, and a plasma generation unit; an etching gas is supplied from the etching gas supply unit into the etching chamber, and the silicon-containing film at the bottom of the pattern having a film formed at least on a side wall is etched using plasma generated from the etching gas by the plasma generation unit. Substrate processing system.

14. An etching apparatus comprising an etching chamber, an etching gas supply unit, and a plasma generation unit, The etching apparatus includes: supplying an etching gas into the etching chamber from the etching gas supply unit; The plasma generating unit is configured to etch a silicon-containing film at a bottom of a pattern on a substrate, the pattern having a film formed at least on a side wall, using the plasma generated from the etching gas by the plasma generating unit; the pattern is formed on a silicon-containing film; the film is formed on a sidewall of the pattern by supplying a film-forming gas; the silicon-containing film is a silicon-containing oxide film, a silicon nitride film, or a laminated film of a silicon-containing oxide film and a silicon nitride film; Etching equipment.

15. an etching apparatus having a first process chamber, a first gas supply means configured to supply an etching gas into the first process chamber, and a high frequency power source for plasma generation configured to generate plasma from the etching gas; a deposition apparatus having a second process chamber and a second gas supply means configured to supply a deposition gas into the second process chamber; A control unit; Equipped with The control unit (a) placing a substrate including a silicon-containing film having a recess formed therein in the second process chamber; (b) supplying the film-forming gas into the second process chamber using the second gas supply means to form a film on at least the sidewall of the recess without generating plasma; (c) removing the substrate from the second process chamber and placing it in the first process chamber; (d) supplying the etching gas into the first process chamber using the first gas supply means, and etching the bottom of the recess on which the film has been formed by plasma generated from the etching gas; configured to perform a process including Substrate processing system.

16. the control unit executes step (d) until an underlying layer below the silicon-containing film is exposed. The substrate processing system of claim 15 .

17. The process further includes (e) removing the substrate from the first process chamber and placing it in the second process chamber; the control unit is configured to execute a process of repeating a cycle including (b) to (e); 17. The substrate processing system according to claim 15 or 16.

18. The control unit, before (a), (a1) forming a recess in the silicon-containing film; (a2) removing reaction products adhered to the substrate by (a1); configured to perform a process further comprising: The substrate processing system according to any one of claims 15 to 17.

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