Device manufacturing methods

Abstract

To provide a manufacturing method of a device capable of implementing a novel process to manufacture the device consisting of a device layer only.SOLUTION: A manufacturing method of a device includes: a wafer preparation step 1001 of preparing a device wafer comprising a device layer in which the device is formed on a substrate; a front face side protective member arrangement step 1003 of arranging a front face side protective member on a front face of the device layer; a substrate removal step 1004 of removing the substrate and exposing a rear face of the device layer; a device layer division step 1002 of forming a dividing layer dividing the device layer into individual devices; a rear face side protective member arrangement step 1005 of arranging a rear face side protective member on the rear face of the device layer; and a front face side protective member removal step 1006 of removing the front face side protective member after implementing the rear face side protective member arrangement step 1005.SELECTED DRAWING: Figure 3

Description

[Technical Field]

[0001] The present invention relates to a method for manufacturing a device. [Background technology]

[0002] As electronic devices become thinner, devices are also required to be thinned to 100 μm or less. For example, a technology is widely adopted in which only the area of ​​a device wafer corresponding to the device is thinned, leaving the outer periphery thick to prevent breakage during handling (see, for example, Patent Document 1). [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Patent Publication No. 2021-5621 Summary of the Invention [Problem to be solved by the invention]

[0004] Incidentally, there is a type of device wafer called an SOI (Silicon on Insulator) wafer, in which an insulating layer called a BOX layer (Buried Oxide Layer) made of SiO2 is formed on a substrate such as silicon, and a device layer including a rewiring layer that constitutes the device is formed on top of that.

[0005] In recent years, there has been a demand for further thinning of devices by completely removing the base material such as silicon from the SOI device wafer to produce a device consisting of only the device layer.

[0006] An object of the present invention is to provide a device manufacturing method that can realize a new process for manufacturing a device consisting of only a device layer. [Means for solving the problem]

[0007] In order to solve the above-mentioned problems and achieve the object, a device manufacturing method of the present invention is a device manufacturing method in which devices are formed in areas partitioned by a plurality of intersecting planned division lines. and a rewiring layer formed on the silicon layer. a wafer preparation step of preparing a device wafer having a device layer on a substrate; Made of hard materials a surface side protection member disposing step of disposing a surface side protection member; and a grinding step after the surface side protection member disposing step is performed. and Ken At least one of the polishing a substrate removing step of removing the substrate to expose a back surface of the device layer, and a device layer dividing step of forming a dividing groove that divides at least the device layer into individual devices along the planned dividing line after performing the substrate removing step or before performing the front-side protective member providing step. and fabricating a device consisting of only the device layer. It is characterized by:

[0008] The method for manufacturing the device may include a back surface protective member disposing step in which the front surface protective member is disposed on the front surface of the device layer, which has been divided into individual devices and from which the base material has been removed, and a front surface protective member removing step in which the front surface protective member is removed after the back surface protective member disposing step is performed.

[0009] The present invention Device manufacturing methods a device manufacturing method including: a wafer preparation step of preparing a device wafer having a substrate on which a device layer is formed, the device layer including an insulating layer, a silicon layer formed on the insulating layer, and a redistribution layer formed on the silicon layer, and devices are formed in areas defined by a plurality of intersecting planned division lines; a front surface protection member disposing step of a front surface protection member on the front surface of the device layer; a substrate removal step of removing the substrate by at least one of grinding, polishing, and etching after performing the front surface protection member disposing step, to expose a back surface of the device layer; a device layer dividing step of forming division grooves along the planned division lines to divide at least the device layer into individual devices after performing the substrate removal step or before performing the front surface protection member disposing step; a back surface protection member disposing step of a back surface protection member made of a hard material and thicker than the device layer on a back surface of the device layer having the front surface protection member disposed on its front surface and having been divided into individual devices and from which the substrate has been removed; and a front surface protection member removal step of removing the front surface protection member after performing the back surface protection member disposing step. a back-side protective member dividing step in which, after the back-side protective member providing step is performed and before or after the front-side protective member removing step, the back-side protective member is divided along the planned dividing line to form individual back-side protective members each having a device disposed on each of the individual back-side protective members; a tape adhering step in which, before or after the back-side protective member dividing step is performed and before the front-side protective member removing step is performed, a tape adhering step in which a tape is adhered to the back side of the back-side protective member; and a device picking up step in which, after the front-side protective member removing step is performed, the device is picked up together with the individual back-side protective member from the tape. The present invention is characterized in that a device composed only of the device layer is manufactured by using the above-mentioned method. [Effects of the Invention]

[0010] The present invention has the effect of realizing a novel process for manufacturing a device consisting of only a device layer. [Brief explanation of the drawings]

[0011] [Figure 1] FIG. 1 is a perspective view of a device wafer to be processed in the device manufacturing method according to the first embodiment. [Figure 2] FIG. 2 is a cross-sectional view of the device wafer shown in FIG. [Figure 3] FIG. 3 is a flowchart showing the flow of the method for manufacturing the device according to the first embodiment. [Figure 4] FIG. 4 is a perspective view schematically showing a device layer dividing step in the method for manufacturing the device shown in FIG. [Figure 5] FIG. 5 is a cross-sectional view schematically showing the device wafer after the device layer dividing step in the device manufacturing method shown in FIG. [Figure 6] FIG. 6 is a cross-sectional view schematically showing the device wafer after the front surface side protection member providing step in the device manufacturing method shown in FIG. [Figure 7] FIG. 7 is a perspective view schematically showing a state in which the substrate of the device wafer is ground in the substrate removing step of the device manufacturing method shown in FIG. [Figure 8] FIG. 8 is a cross-sectional view schematically showing a main part of the device wafer after grinding in the base material removing step of the device manufacturing method shown in FIG. [Figure 9] FIG. 9 is a cross-sectional view schematically showing a main part of the device wafer after the base material has been removed in the base material removing step of the device manufacturing method shown in FIG. [Figure 10] FIG. 10 is a cross-sectional view schematically showing the device wafer after the back surface protection member providing step in the device manufacturing method shown in FIG. [Figure 11] FIG. 11 is a cross-sectional view schematically showing a front surface side protection member removing step in the method of manufacturing the device shown in FIG. [Figure 12] FIG. 12 is a cross-sectional view schematically showing a device pick-up step in the method for manufacturing the device shown in FIG. [Figure 13] FIG. 13 is a cross-sectional view schematically showing the device wafer after the back surface protection member providing step in the device manufacturing method according to the modified example of the first embodiment. [Figure 14] FIG. 14 is a cross-sectional view schematically showing a front surface protection member removing step in a device manufacturing method according to a modified example of the first embodiment. [Figure 15] FIG. 15 is a cross-sectional view schematically showing a device pick-up step in a device manufacturing method according to a modified example of the first embodiment. [Figure 16] FIG. 16 is a flowchart showing the flow of the method for manufacturing a device according to the second embodiment. [Figure 17] FIG. 17 is a cross-sectional view schematically showing the device wafer after the back surface protection member providing step in the device manufacturing method shown in FIG. [Figure 18] 18 is a cross-sectional view schematically showing a back surface protection member dividing start point forming step in the method of manufacturing the device shown in FIG. [Figure 19] FIG. 19 is a plan view schematically showing the shield tunnel formed in the rear surface protection member division start point forming step in the device manufacturing method shown in FIG. [Figure 20] FIG. 20 is a cross-sectional view schematically showing a tape attachment step in the method for manufacturing the device shown in FIG. [Figure 21] FIG. 21 is a cross-sectional view schematically showing a front surface protection member removing step in the method of manufacturing the device shown in FIG. [Figure 22] 22 is a cross-sectional view schematically showing a back surface protection member dividing step in the method for manufacturing the device shown in FIG. [Figure 23] FIG. 23 is a cross-sectional view schematically showing a device pick-up step in the method for manufacturing the device shown in FIG. [Figure 24]FIG. 24 is a flowchart showing the flow of a method for manufacturing a device according to a modified example of the second embodiment. [Figure 25] FIG. 25 is a flowchart showing the flow of the method for manufacturing a device according to the third embodiment. [Figure 26] FIG. 26 is a cross-sectional view schematically showing the device wafer after the front surface side protection member providing step in the device manufacturing method shown in FIG. [Figure 27] FIG. 27 is a perspective view schematically showing a state in which the base material of the device wafer is ground in the base material removing step of the device manufacturing method shown in FIG. [Figure 28] FIG. 28 is a cross-sectional view schematically showing a main part of the device wafer after grinding in the base material removing step of the device manufacturing method shown in FIG. [Figure 29] FIG. 29 is a cross-sectional view schematically showing a main part of the device wafer after the base material has been removed in the base material removing step of the device manufacturing method shown in FIG. [Figure 30] FIG. 30 is a cross-sectional view schematically showing a main part of the device wafer after the device layer dividing step in the device manufacturing method shown in FIG. [Figure 31] FIG. 31 is a cross-sectional view schematically showing a main part of a device pick-up step in the method for manufacturing the device shown in FIG. [Figure 32] FIG. 32 is a flowchart showing the flow of the method for manufacturing the device according to the fourth embodiment. [Figure 33] FIG. 33 is a cross-sectional view schematically showing the device wafer after the back surface protection member providing step in the device manufacturing method according to the fourth embodiment. [Figure 34] FIG. 34 is a cross-sectional view schematically showing the device wafer after the front surface side protective member removal step in the device manufacturing method according to the fourth embodiment. [Figure 35] FIG. 35 is a cross-sectional view schematically showing the device wafer after the device layer dividing step in the device manufacturing method according to the fourth embodiment. DETAILED DESCRIPTION OF THE INVENTION

[0012] Modes (embodiments) for carrying out the present invention will be described in detail with reference to the drawings. The present invention is not limited to the contents described in the following embodiments. Furthermore, the components described below include those that can be easily imagined by a person skilled in the art and those that are substantially the same. Furthermore, the configurations described below can be combined as appropriate. Furthermore, various omissions, substitutions, or modifications of the configuration can be made within the scope of the gist of the present invention.

[0013] [Embodiment 1] A device manufacturing method according to a first embodiment of the present invention will be described with reference to the drawings. Fig. 1 is a perspective view of a device wafer to be processed in the device manufacturing method according to the first embodiment. Fig. 2 is a cross-sectional view of the device wafer shown in Fig. 1. Fig. 3 is a flowchart showing the flow of the device manufacturing method according to the first embodiment.

[0014] The device manufacturing method according to the first embodiment is a method for processing a device wafer 1 shown in Fig. 1. The device wafer 1 to be processed in the device manufacturing method according to the first embodiment is a device wafer such as a disk-shaped semiconductor wafer having a device layer 2 on a substrate 3 made of silicon, as shown in Figs. 1 and 2. The device wafer 1 includes the device layer 2 and the substrate 3.

[0015] 1, in the device layer 2, devices 5 are formed in regions partitioned by a plurality of intersecting planned division lines 4. The devices 5 are, for example, integrated circuits such as ICs (Integrated Circuits) or LSIs (Large Scale Integrations), power devices, or MEMS (Micro Electro Mechanical Systems).

[0016] As shown in FIG. 2, the device layer 2 includes an insulating layer 6 formed on the surface 31 of the substrate 3, a silicon layer 7 formed on the insulating layer 6, and a redistribution layer 8 formed on the silicon layer 7. The insulating layer 6 is called a BOX layer (Buried Oxide Layer) made of SiO2. The silicon layer 7 is made of silicon. The redistribution layer 8 constitutes the device 5.

[0017] As described above, in the first embodiment, the device wafer 1 is a so-called SOI (Silicon on Insulator) wafer in which the device layer 2 is formed on the surface 31 of the base material 3. In the first embodiment, the base material 3 is removed from the device wafer 1, and the device wafer 1 is divided into individual devices 5 along the planned division lines 4. In the first embodiment, each of the divided devices 5 is composed of only the device layer 2 and has a thickness of about 10 μm.

[0018] The device manufacturing method according to the first embodiment is a method of manufacturing individual devices 5 by removing the base material 3 of the device wafer 1 and dividing it along the planned division lines 4. As shown in Fig. 3 , the device manufacturing method includes a wafer preparation step 1001, a device layer division step 1002, a front surface side protective member provision step 1003, a base material removal step 1004, a back surface side protective member provision step 1005, a front surface side protective member removal step 1006, and a device pickup step 1007.

[0019] (Wafer preparation step) The wafer preparation step 1001 is a step for preparing a device wafer having the above-described configuration. In the wafer preparation step 1001, the device wafer 1 having the above-described configuration is prepared.

[0020] (Device layer division step) Fig. 4 is a perspective view schematically showing a device layer dividing step in the method for manufacturing the device shown in Fig. 3. Fig. 5 is a cross-sectional view schematically showing a device wafer after the device layer dividing step in the method for manufacturing the device shown in Fig. 3. In embodiment 1, the device layer dividing step 1002 is a step of forming division grooves 9 that divide at least the device layer 2 into individual devices 5 along the planned division lines 4 before performing the front surface side protection member providing step 1003.

[0021] In embodiment 1, in the device layer dividing step 1002, a known mounter adheres a disk-shaped tape 11 having a larger diameter than the device wafer 1 to the back surface 32 behind the front surface 31 of the substrate 3 of the device wafer 1, as shown in FIG. 4, and also adheres an annular frame 12 having an inner diameter larger than the outer diameter of the device wafer 1 to the outer peripheral edge of the tape 11, thereby supporting the device wafer 1 within the inner opening of the annular frame 12.

[0022] In the first embodiment, in the device layer dividing step 1002, the laser processing apparatus 40 suction-holds the back surface 32 side of the base material 3 of the device wafer 1 onto the holding surface 42 of the chuck table 41 via the tape 11. In the first embodiment, in the device layer dividing step 1002, the laser processing apparatus 40 sets the focal point 44 of the laser beam 43 on the device layer 2, and while moving the chuck table 41 relative to the laser beam applying unit 45 along the dividing lines 4, irradiates the device wafer 1 with the laser beam 43 having a wavelength that is absorbed by the device wafer 1 from the laser beam applying unit 45 onto the dividing lines 4 of the device wafer 1, thereby performing ablation processing on the device wafer 1.

[0023] In the first embodiment, in the device layer dividing step 1002, the laser processing apparatus 40 performs ablation processing on the division lines 4 of the device wafer 1 to form division grooves 9 that divide the device layer 2 into individual devices 5. In the first embodiment, in the device layer dividing step 1002, the laser processing apparatus 40 forms division grooves 9 on all of the division lines 4 of the device wafer 1, as shown in FIG.

[0024] In the first embodiment, in the device layer dividing step 1002, the laser processing apparatus 40 performs ablation processing on the dividing lines 4 of the device wafer 1 to form the dividing grooves 9, but in the present invention, in the device layer dividing step 1002, the cutting apparatus may cut a cutting blade into the dividing lines 4 of the device layer 2 of the device wafer 1 to form the dividing grooves 9. Also, in the present invention, in the device layer dividing step 1002, the division grooves 9 may be formed by performing etching such as wet etching or dry etching on the dividing lines 4 of the device layer 2 of the device wafer 1.

[0025] (Front surface protection member placement step) Fig. 6 is a cross-sectional view schematically showing the device wafer after the front surface protection member providing step of the device manufacturing method shown in Fig. 3. The front surface protection member providing step 1003 is a step of providing a front surface protection member 13 on the front surface 21 of the device layer 2.

[0026] In the first embodiment, in the front surface protection member disposing step 1003, a first temporary adhesive 14 whose adhesive strength decreases when a first external stimulus is applied to the front surface 21 of the device layer 2 of the device wafer 1 is applied, and as shown in Fig. 6, the front surface protection member 13 is attached to the first temporary adhesive 14, and the front surface protection member 13 is disposed on the front surface 21 of the device layer 2, and the tape 11 is peeled off from the back surface 32. Note that in the first embodiment, the application of the first external stimulus means irradiation with ultraviolet light.

[0027] In the first embodiment, the front surface side protective member 13 is made of a hard material and is formed in a disk shape with the same diameter as the device wafer 1. In the first embodiment, since the front surface side protective member 13 is subjected to wet etching or dry etching in the base material removing step 1004, it is desirable that the front surface side protective member 13 be made of a material that is resistant to these etching methods, and is made of glass.

[0028] In the present invention, the front surface protection member 13 may be formed by applying a liquid resin (ResiFlat (registered trademark) manufactured by Disco Corporation) to the surface 21 of the device layer 2 and then curing the liquid resin. In the present invention, the front surface protection member 13 may be a surface protection tape made of a base material and an adhesive layer, or may be a disk-shaped plate made of a hard material such as metal, ceramics, or silicon that is disposed on the surface 21 of the device layer 2 via a first temporary adhesive 14.

[0029] (Base material removal step) Fig. 7 is a perspective view schematically showing a state in which the substrate of the device wafer is ground in the substrate removing step of the device manufacturing method shown in Fig. 3. Fig. 8 is a cross-sectional view schematically showing a main part of the device wafer after grinding in the substrate removing step of the device manufacturing method shown in Fig. 3. Fig. 9 is a cross-sectional view schematically showing a main part of the device wafer after the substrate has been removed in the substrate removing step of the device manufacturing method shown in Fig. 3.

[0030] In the base material removing step 1004, after the front surface side protective member providing step 1003 is performed, the base material 3 is removed by at least one of grinding, polishing, and etching to expose the back surface 22 of the device layer 2. In the first embodiment, in the base material removing step 1004, the grinding apparatus 50 suction-holds the front surface 21 side of the device layer 2 of the device wafer 1 to the holding surface 52 of the chuck table 51 via the front surface side protective member 13.

[0031] In the substrate removal step 1004, as shown in FIG. 7, the grinding device 50 rotates the grinding wheel 54 around its axis using the spindle 53 and rotates the chuck table 51 around its axis, and while supplying abrasive fluid from a grinding fluid nozzle (not shown), abuts the grinding stone 55 of the grinding wheel 54 against the back surface 32 of the substrate 3 of the device wafer 1, moves the grinding wheel 54 toward the chuck table 51 at a predetermined feed rate, and grinds the back surface 32 side of the device wafer 1 with the grinding stone 55.

[0032] In the first embodiment, in the base material removing step 1004, the grinding apparatus 50 grinds the back surface 32 of the base material 3 of the device wafer 1 until a small amount of the base material 3 remains, as shown in Fig. 8. In the first embodiment, in the base material removing step 1004, etching such as wet etching or dry etching is performed on the back surface 32 of the base material 3 of the device wafer 1, so that the base material 3 of the device wafer 1 is completely removed and the device wafer 1 is divided into individual devices 5, as shown in Fig. 9.

[0033] In the first embodiment, the base material 3 of the device wafer 1 is completely removed in the base material removing step 1004, but the present invention is not limited to this, and a small amount of the base material 3 may be left. Also, in the first embodiment, grinding and etching are performed on the device wafer 1 in this order in the base material removing step 1004, but the present invention is not limited to this, and polishing or the like may also be performed. In short, in the present invention, it is sufficient to remove the base material 3 by performing at least one of grinding, polishing, and etching on the device wafer 1 in the base material removing step 1004.

[0034] (Back surface protection member placement step) Fig. 10 is a cross-sectional view schematically showing the device wafer after the back surface protection member providing step in the device manufacturing method shown in Fig. 3. In the back surface protection member providing step 1005, a front surface protection member 13 is provided on the front surface 21, and a back surface protection member 15 is provided on the back surface 22 of the device layer 2 of the device wafer 1 from which the device wafer 1 has been divided into individual devices 5 and the base material 3 has been removed.

[0035] In the first embodiment, in the backside protection member disposing step 1005, a known mounter or the like adheres an adhesive layer, the adhesive strength of which decreases when a second external stimulus is applied, to the backside 22 of the device layer 2 of the device wafer 1 on the base layer of the tape 16 of the disk-shaped backside protection member 15, which has a diameter larger than that of the device wafer 1, as shown in FIG. 10 , and adheres an annular frame 17, the inner diameter of which is larger than the outer diameter of the device wafer 1, to the outer periphery of the adhesive layer of the tape 16, thereby supporting the device wafer 1 within the inner opening of the annular frame 17. In the first embodiment, the tape 16 and the frame 17 constitute the backside protection member 15. Thus, in the first embodiment, in the backside protection member disposing step 1005, the backside protection member 15 is disposed on the backside 22 of the device layer 2 of the device wafer 1. Note that in the first embodiment, the second external stimulus is applied by heating. In the present invention, in the rear surface protection member providing step 1005, a hard plate may be attached as the rear surface protection member 15 via a temporary adhesive.

[0036] (Surface side protective material removal step) Fig. 11 is a cross-sectional view schematically showing a front surface protection member removing step in the manufacturing method of the device shown in Fig. 3. Front surface protection member removing step 1006 is a step of removing front surface protection member 13 after back surface protection member providing step 1005 is performed.

[0037] In the first embodiment, in the front surface side protective member removing step 1006, a first external stimulus is applied to the first temporary adhesive 14 to reduce the adhesive strength of the first temporary adhesive 14. In the first embodiment, in the front surface side protective member removing step 1006, ultraviolet light is irradiated onto the first temporary adhesive 14 through the front surface side protective member 13 to reduce the adhesive strength of the first temporary adhesive 14. In the first embodiment, in the front surface side protective member removing step 1006, after the adhesive strength of the first temporary adhesive 14 has been reduced, the front surface side protective member 13 is peeled off from the front surface 21 of the device layer 2 of the device wafer 1 together with the first temporary adhesive 14, as shown in FIG. 11 , and the front surface side protective member 13 is removed together with the first temporary adhesive 14.

[0038] (Device Pickup Step) Fig. 12 is a cross-sectional view schematically showing a device pick-up step in the method for manufacturing the device shown in Fig. 3. In device pick-up step 1007, after front-surface-side protective member removal step 1006 is performed, the singulated devices 5 are picked up from back-surface-side protective member 15.

[0039] In embodiment 1, in device pickup step 1007, a second external stimulus (heating) is applied to the adhesive layer of tape 16 of back surface protection member 15 to reduce the adhesive strength of the adhesive layer. In embodiment 1, in device pickup step 1007, after reducing the adhesive strength of the adhesive layer of tape 16 of back surface protection member 15, picker 60 picks up devices 5 one by one from tape 16, for example, by suction-holding devices 5, as shown in FIG.

[0040] The device manufacturing method according to the first embodiment described above involves forming division grooves 9 that divide the device layer 2 into individual devices 5 along the planned division lines 4 in the device layer division step 1002, arranging a surface side protective member 13 on the surface 21 of the device layer 2 in the surface side protective member arrangement step 1003, and then removing the substrate 3 to expose the back surface 22 of the device layer 2 in the substrate removal step 1004 after performing the surface side protective member arrangement step 1003.

[0041] For this reason, in the device manufacturing method, while removing the base material 3 from the device wafer 1 in the base material removing step 1004, the device wafer 1 can be divided into individual devices 5 each consisting of only the device layer 2. As a result, the device manufacturing method has the effect of realizing a novel process for manufacturing devices 5 each consisting of only the device layer 2.

[0042] [Modification] A device manufacturing method according to a modified example of the first embodiment of the present invention will be described with reference to the drawings. Fig. 13 is a cross-sectional view schematically showing a device wafer after the back surface protection member providing step in the device manufacturing method according to the modified example of the first embodiment. Fig. 14 is a cross-sectional view schematically showing the front surface protection member removing step in the device manufacturing method according to the modified example of the first embodiment. Fig. 15 is a cross-sectional view schematically showing the device pick-up step in the device manufacturing method according to the modified example of the first embodiment. In Figs. 13, 14, and 15, the same parts as those in the first embodiment are designated by the same reference numerals, and their description will be omitted.

[0043] The device manufacturing method according to the modified example of the first embodiment is the same as that of the first embodiment, except that the back surface protection member 15-1 disposed on the back surface 22 of the device layer 2 in the back surface protection member disposing step 1005 is different from that of the first embodiment.

[0044] In a modification of the first embodiment, in the back surface protection member disposing step 1005, a second temporary adhesive 16-1, the adhesive strength of which decreases when a second external stimulus is applied, is applied to the back surface 22 of the device layer 2 of the device wafer 1. As shown in FIG. 13 , the back surface protection member 15-1 is attached to the second temporary adhesive 16-1, and the back surface protection member 15-1 is disposed on the back surface 22 of the device layer 2. In the modification, the back surface protection member 15-1 is made of a hard material and is formed in a disk shape with the same diameter as the device wafer 1. In the modification, the back surface protection member 15-1 is made of glass, similar to the front surface protection member 13. Note that in the present invention, the back surface protection member 15-1 may be a tape made of PET resin with an adhesive layer or a sheet-like resin (LC tape).

[0045] In a modified example of embodiment 1, in the surface side protective member removal step 1006, as in embodiment 1, a first external stimulus is applied to the first temporary adhesive 14 to reduce the adhesive strength of the first temporary adhesive 14, and as shown in Figure 14, the surface side protective member 13 is peeled off from the surface 21 of the device layer 2 of the device wafer 1 together with the first temporary adhesive 14, and the surface side protective member 13 is removed together with the first temporary adhesive 14.

[0046] In a modified example of embodiment 1, in the device pickup step 1007, a second external stimulus is applied (heated) to the second temporary adhesive 16-1 to reduce the adhesive strength of the second temporary adhesive 16-1, and as shown in FIG. 15, the picker 60 picks up the devices 5 one by one from the back surface protection member 15-1 and the second temporary adhesive 16-1, for example, by suction-holding the devices 5.

[0047] In the device manufacturing method according to a modified example of embodiment 1, a dividing groove 9 is formed along the intended dividing line 4 in a device layer dividing step 1002, a surface side protective member 13 is disposed on the surface 21 of the device layer 2 in a surface side protective member disposing step 1003, and the substrate 3 is removed in a substrate removing step 1004. Therefore, even while removing the substrate 3 from the device wafer 1, the device wafer 1 can be divided into individual devices 5 consisting of only the device layer 2.

[0048] [Embodiment 2] A device manufacturing method according to a second embodiment of the present invention will be described with reference to the drawings. FIG. 16 is a flowchart showing the flow of the device manufacturing method according to the second embodiment. FIG. 17 is a cross-sectional view schematically showing a device wafer after the back surface protective member disposing step in the device manufacturing method shown in FIG. 16. FIG. 18 is a cross-sectional view schematically showing the back surface protective member dividing start point forming step in the device manufacturing method shown in FIG. 16. FIG. 19 is a plan view schematically showing a shield tunnel formed in the back surface protective member dividing start point forming step in the device manufacturing method shown in FIG. 16. FIG. 20 is a cross-sectional view schematically showing the tape adhering step in the device manufacturing method shown in FIG. 16. FIG. 21 is a cross-sectional view schematically showing the front surface protective member removing step in the device manufacturing method shown in FIG. 16. FIG. 22 is a cross-sectional view schematically showing the back surface protective member dividing step in the device manufacturing method shown in FIG. 16. FIG. 23 is a cross-sectional view schematically showing the device pick-up step in the device manufacturing method shown in FIG. 16. 16, 17, 18, 19, 20, 21, 22 and 23, the same parts as those in the first embodiment and the modified example of the first embodiment are denoted by the same reference numerals, and the description thereof will be omitted.

[0049] 16, the device manufacturing method according to the second embodiment includes a wafer preparation step 1001, a device layer division step 1002, a front surface side protective member provision step 1003, a base material removal step 1004, a back surface side protective member provision step 1005, a back surface side protective member division starter formation step 1010, a tape application step 1011, a front surface side protective member removal step 1006, a back surface side protective member division step 1012, and a device pickup step 1007-2. The device manufacturing method according to the second embodiment includes the same wafer preparation step 1001, the device layer division step 1002, the front surface side protective member provision step 1003, and the base material removal step 1004 as those of the first embodiment.

[0050] In the back surface protection member disposing step 1005 of the device manufacturing method according to the second embodiment, a second temporary adhesive 16-1 whose adhesive strength decreases when a second external stimulus is applied is applied to the back surface 22 of the device layer 2 of the device wafer 1, as in the modified example of the first embodiment. As shown in FIG. 17 , the back surface protection member 15-1 is attached to the second temporary adhesive 16-1, thereby disposing the back surface protection member 15-1 on the back surface 22 of the device layer 2. In the second embodiment, as in the modified example of the first embodiment, the back surface protection member 15-1 is made of a hard material and is formed in a disk shape with the same diameter as the device wafer 1. In the second embodiment, as in the modified example of the first embodiment, the back surface protection member 15-1 is made of glass, but may also be made of silicon. Furthermore, in the present invention, the back surface protection member 15-1 may be a sheet-like resin (also referred to as LC tape).

[0051] In the back-side protective member division starting point forming step 1010 of the device manufacturing method according to the second embodiment, division starting points for dividing the device wafer 1 into individual devices 5 along the planned division lines 4 are formed in the back-side protective member 15-1. In the second embodiment, in the back-side protective member division starting point forming step 1010, the laser processing apparatus 70 opens the on-off valve 77 provided in the suction path 76, and sucks the holding surface 72 of the chuck table 71 with the suction source 78, so that the front surface 21 side of the device layer 2 of the device wafer 1 is suction-held on the holding surface 72 of the chuck table 71 via the front-side protective member 13.

[0052] In embodiment 2, in the back surface protection member division starting point formation step 1010, the laser processing device 70 sets the focal point 74 of the laser beam 73 inside the back surface protection member 15-1, and as shown in Figure 18, while moving the chuck table 71 relative to the laser beam irradiation unit 75 along the intended division line 4, i.e., the division groove 9, the laser beam irradiation unit 75 irradiates the back surface protection member 15-1 with a pulsed laser beam 73 of a wavelength that is transparent to the back surface protection member 15-1.

[0053] In the second embodiment, in the back-side protective member division starter forming step 1010, the laser processing apparatus 70 forms a plurality of shield tunnels 23, which are division starters, inside the back-side protective member 15-1, each having a pore 24 and an altered region 25 surrounding the pore 24, as shown in FIG. 19. The pores 24 and the altered region 25 are formed along the thickness direction of the back-side protective member 15-1, with the pores 24 penetrating the back-side protective member 15-1 in the thickness direction and the altered region 25 being formed around the pore 24 along the thickness direction of the back-side protective member 15-1. The shield tunnels 23 are formed at predetermined intervals along the intended division line 4, i.e., the division groove 9.

[0054] In the second embodiment, in the back surface protective member dividing start point forming step 1010, the laser processing apparatus 70 forms shield tunnels 23, which are dividing start points, in the back surface protective member 15-1 along all of the dividing lines 4, i.e., the dividing grooves 9, of the device wafer 1. Note that in the second embodiment, in the back surface protective member dividing start point forming step 1010, the laser processing apparatus 70 forms shield tunnels 23, which are dividing start points, in the back surface protective member 15-1 along all of the dividing lines 4, i.e., the dividing grooves 9, of the device wafer 1. However, in the present invention, modified layers may be formed inside the back surface protective member 15-1 along all of the dividing lines 4, i.e., the dividing grooves 9, of the device wafer 1.

[0055] The modified layer refers to a region where the density, refractive index, mechanical strength, or other physical properties are different from those of the surrounding area, and examples thereof include a melting treatment region, a crack region, a dielectric breakdown region, a refractive index change region, and a region where these regions are mixed, etc. The modified layer has lower mechanical strength than other parts of the back surface side protection member 15-1.

[0056] In the second embodiment, the tape applying step 1011 is a step of applying tape 18 to a back surface 15-2 of the back surface protection member 15-1, which is the back surface of the back surface protection member 15-1 that is applied to the device layer 2, before the back surface protection member dividing step 1012 is performed and before the front surface protection member removing step 1006 is performed. In the second embodiment, in the tape applying step 1011, a known mounter applies a disk-shaped tape 18 having a diameter larger than the device wafer 1 to the back surface 15-2 of the back surface protection member 15-1, as shown in FIG. 20 , and also applies an annular frame 19 having an inner diameter larger than the outer diameter of the device wafer 1 to the outer periphery of the tape 18, thereby supporting the device wafer 1 and the protection members 13 and 15-1 within an opening inside the annular frame 19.

[0057] In embodiment 2, in the surface side protective member removal step 1006, as in embodiment 1, etc., a first external stimulus is applied to the first temporary adhesive 14 to reduce the adhesive strength of the first temporary adhesive 14, and as shown in Figure 21, the surface side protective member 13 is peeled off from the surface 21 of the device layer 2 of the device wafer 1 together with the first temporary adhesive 14, and the surface side protective member 13 is removed together with the first temporary adhesive 14.

[0058] The back surface side protective member dividing step 1012 is a step that is performed after the back surface side protective member providing step 1005 and the front surface side protective member removing step 1006, in which the back surface side protective member 15-1 is divided along the division lines 4 to form individual back surface side protective members 15-1, and the devices 5 are disposed on the individual back surface side protective members 15-1. In the second embodiment, in the back surface side protective member dividing step 1012, a known expanding device expands the tape 18 in the circumferential direction to divide the back surface side protective member 15-1 along the division lines 4 starting from the shield tunnel 23, as shown in FIG.

[0059] In the second embodiment, in the back surface protection member dividing step 1012, a known expansion device divides the back surface protection member 15-1 along the division lines 4, and the devices 5 are disposed on the individual pieces of the back surface protection member 15-1 by means of the second temporary adhesive 16-1. Note that in the present invention, the back surface protection member 15-1 may be divided along the division lines 4 starting from the shield tunnel 23 by known breaking.

[0060] In the second embodiment, the device pick-up step 1007-2 is a step of picking up the devices 5 together with the individual back surface protection members 15-1 from the tape 18 after the front surface protection member removal step 1006 is performed. In the second embodiment, in the device pick-up step 1007-2, as shown in FIG. 23 , the picker 60 picks up the devices 5 one by one together with the individual back surface protection members 15-1 from the tape 18 by, for example, suction-holding the devices 5.

[0061] In the present invention, in the device pickup step 1007-2, after the back surface protection member dividing step 1012 is performed, the picker 60 may pick up the back surface protection member 15-1 by suction holding the back surface protection member 15-1 after transferring the tape and adhering it to the front surface of the device 5 and removing the tape 18 that has been adhered to the back surface 15-2 of the back surface protection member 15-1.

[0062] In the device manufacturing method of embodiment 2, a dividing groove 9 is formed along the intended dividing line 4 in a device layer dividing step 1002, a surface side protective member 13 is disposed on the surface 21 of the device layer 2 in a surface side protective member disposing step 1003, and the substrate 3 is removed in a substrate removing step 1004. Therefore, even while removing the substrate 3 from the device wafer 1, the device wafer 1 can be divided into individual devices 5 consisting of only the device layer 2.

[0063] Furthermore, in the device manufacturing method according to embodiment 2, in the back surface protection member dividing step 1012, the back surface protection member 15-1 is divided along the planned dividing lines 4, i.e., the dividing grooves 9, into individual pieces, and in the device pick-up step 1007-2, the device 5 is picked up together with the divided back surface protection member 15-1, making it easier to handle the device 5 in subsequent processes.

[0064] [Modification] A method for manufacturing a device according to a modified example of embodiment 2 of the present invention will be described with reference to the drawings. Fig. 24 is a flowchart showing the flow of the method for manufacturing a device according to a modified example of embodiment 2. In Fig. 24, the same parts as those in embodiment 2 are designated by the same reference numerals, and their description will be omitted.

[0065] As shown in FIG. 24, the device manufacturing method according to a modified example of embodiment 2 does not include back surface side protective member division starting point formation step 1010, but instead includes wafer preparation step 1001, device layer division step 1002, front surface side protective member arrangement step 1003, substrate removal step 1004, back surface side protective member arrangement step 1005, back surface side protective member division step 1012, tape application step 1011, front surface side protective member removal step 1006, and device pickup step 1007-2, which are carried out in this order.

[0066] The back side protective member dividing step 1012 in the device manufacturing method according to a modified example of embodiment 2 is a step in which, after the back side protective member disposing step 1005 is performed and before the front side protective member removing step 1006 is performed, the back side protective member 15-1 is divided along the planned dividing line 4, resulting in a state in which the device 5 is disposed on the individual back side protective member 15-1.

[0067] In the back side protective member dividing step 1012 of the device manufacturing method according to the modified example of embodiment 2, a laser processing device irradiates the back side protective member 15-1 with a laser beam having a wavelength that is absorbed by the back side protective member 15-1 to perform ablation processing, or a cutting device cuts a cutting blade into the back side protective member 15-1 to divide the back side protective member 15-1 along the planned dividing line 4, i.e., the dividing groove 9, as in embodiment 2.

[0068] The tape application step 1011 in the device manufacturing method according to a modified example of embodiment 2 is a step of applying tape 18 to the back surface 15-2 of the back surface protection member 15-1 after the back surface protection member division step 1012 and before the front surface protection member removal step 1006.

[0069] In the device manufacturing method according to a modified example of embodiment 2, a dividing groove 9 is formed along the intended dividing line 4 in a device layer dividing step 1002, a surface side protective member 13 is disposed on the surface 21 of the device layer 2 in a surface side protective member disposing step 1003, and the substrate 3 is removed in a substrate removing step 1004. Therefore, even while removing the substrate 3 from the device wafer 1, the device wafer 1 can be divided into individual devices 5 consisting of only the device layer 2.

[0070] Furthermore, in the device manufacturing method according to the modified example of embodiment 2, in the back surface protection member dividing step 1012, the back surface protection member 15-1 is divided along the planned dividing line 4, i.e., the dividing groove 9, into individual pieces, and in the device pick-up step 1007-2, the device 5 is picked up together with the divided back surface protection member 15-1, making it easier to handle the device 5 in subsequent processes.

[0071] [Embodiment 3] A device manufacturing method according to a third embodiment of the present invention will be described with reference to the drawings. FIG. 25 is a flowchart showing the flow of the device manufacturing method according to the third embodiment. FIG. 26 is a cross-sectional view schematically showing the device wafer after the front-side protective member disposing step of the device manufacturing method shown in FIG. 25. FIG. 27 is a perspective view schematically showing a state in which the substrate of the device wafer is ground in the substrate removing step of the device manufacturing method shown in FIG. 25. FIG. 28 is a cross-sectional view schematically showing a main part of the device wafer after grinding in the substrate removing step of the device manufacturing method shown in FIG. 25. FIG. 29 is a cross-sectional view schematically showing a main part of the device wafer after the substrate has been removed in the substrate removing step of the device manufacturing method shown in FIG. 25. FIG. 30 is a cross-sectional view schematically showing a main part of the device wafer after the device layer dividing step of the device manufacturing method shown in FIG. 25. FIG. 31 is a cross-sectional view schematically showing a main part of the device pick-up step of the device manufacturing method shown in FIG. 25. 25, 26, 27, 28, 29, 30 and 31, the same parts as those in the first embodiment are denoted by the same reference numerals and the description thereof will be omitted.

[0072] As shown in FIG. 25, the device manufacturing method of embodiment 3 includes a wafer preparation step 1001, a front surface side protective member arrangement step 1003, a substrate removal step 1004, a device layer division step 1002, and a device pick-up step 1007, and the wafer preparation step 1001, the front surface side protective member arrangement step 1003, the substrate removal step 1004, the device layer division step 1002, and the device pick-up step 1007 are carried out in this order.

[0073] In the wafer preparation step 1001 of the device manufacturing method according to the third embodiment, the device wafer 1 having the above-described configuration is prepared, as in the first embodiment.

[0074] In the surface side protective member disposing step 1003 of the device manufacturing method of embodiment 3, as in embodiment 1, a first temporary adhesive 14 whose adhesive strength decreases when a first external stimulus is applied is applied to the surface 21 of the device layer 2 of the device wafer 1, and as shown in Figure 26, the surface side protective member 13 is attached to the first temporary adhesive 14, and the surface side protective member 13 is disposed on the surface 21 of the device layer 2.

[0075] In the substrate removal step 1004 of the device manufacturing method of embodiment 3, as shown in FIG. 27, the grinding device 50 grinds the back surface 32 side of the substrate 3 of the device wafer 1 with a grinding wheel 55, as in embodiment 1, and grinds the back surface 32 of the substrate 3 of the device wafer 1 until a small amount of the substrate 3 remains, as shown in FIG. 28.

[0076] In the substrate removal step 1004 of the device manufacturing method of embodiment 3, similar to embodiment 1, etching such as wet etching or dry etching is performed on the back surface 32 of the substrate 3 of the device wafer 1 to completely remove the substrate 3 of the device wafer 1 and expose the back surface 22 of the device layer 2, as shown in Figure 29.

[0077] The device layer dividing step 1002 in the device manufacturing method according to the third embodiment is a step of forming division grooves 9 that divide at least the device layer 2 into individual devices 5 along the planned division lines 4 after the base material removing step 1004 is performed. In the device layer dividing step 1002 in the device manufacturing method according to the third embodiment, the laser processing apparatus 40 suction-holds the front surface side protection member 13 on the holding surface 42 of the chuck table 41, and performs ablation processing on the device wafer 1 in the same manner as in the first embodiment, thereby forming division grooves 9 that divide the device layer 2 into individual devices 5, as shown in FIG.

[0078] In the third embodiment, in the device layer dividing step 1002, the laser processing apparatus 40 performs ablation processing on the dividing lines 4 of the device wafer 1 to form the dividing grooves 9, but in the present invention, in the device layer dividing step 1002, the cutting apparatus may cut a cutting blade into the dividing lines 4 of the device layer 2 of the device wafer 1 to form the dividing grooves 9. Also, in the present invention, in the device layer dividing step 1002, the division grooves 9 may be formed by performing etching such as wet etching or dry etching on the dividing lines 4 of the device layer 2 of the device wafer 1.

[0079] The device pick-up step 1007 of the device manufacturing method according to the third embodiment is a step of picking up the singulated devices 5 from the front surface protection member 13. In the device pick-up step 1007 of the device manufacturing method according to the third embodiment, a first external stimulus is applied to the first temporary adhesive 14 to reduce the adhesive strength of the first temporary adhesive 14. In the device pick-up step 1007 of the device manufacturing method according to the third embodiment, after the adhesive strength of the first temporary adhesive 14 is reduced, the picker 60 picks up the devices 5 one by one from the front surface protection member 13, for example, by suction-holding the devices 5, as shown in FIG.

[0080] In the device manufacturing method of embodiment 3, a surface side protective member 13 is disposed on the surface 21 of the device layer 2 in a surface side protective member disposing step 1003, the substrate 3 is removed in a substrate removing step 1004, and dividing grooves 9 are formed along the planned dividing lines 4 in a device layer dividing step 1002. Therefore, even while removing the substrate 3 from the device wafer 1, the device wafer 1 can be divided into individual devices 5 consisting of only the device layer 2.

[0081] In the third embodiment of the present invention, tape may be attached to the front surface protective member 13, the front surface protective member 13 may also be divided into individual devices 5, and the devices 5 may be picked up from the tape together with the divided front surface protective members 13, and the front surface protective member 13 may be used to handle the devices 5.

[0082] [Embodiment 4] A device manufacturing method according to a fourth embodiment of the present invention will be described with reference to the drawings. Fig. 32 is a flowchart showing the flow of the device manufacturing method according to the fourth embodiment. Fig. 33 is a cross-sectional view schematically showing the device wafer after the back surface protection member providing step in the device manufacturing method according to the fourth embodiment. Fig. 34 is a cross-sectional view schematically showing the device wafer after the front surface protection member removing step in the device manufacturing method according to the fourth embodiment. Fig. 35 is a cross-sectional view schematically showing the device wafer after the device layer dividing step in the device manufacturing method according to the fourth embodiment. In Figs. 32, 33, 34, and 35, the same parts as those in the first embodiment, the modified example of the first embodiment, and the third embodiment are designated by the same reference numerals, and description thereof will be omitted.

[0083] As shown in FIG. 25 , the device manufacturing method of embodiment 4 includes a wafer preparation step 1001, a front surface side protective member providing step 1003, a base material removal step 1004, a back surface side protective member providing step 1005, a front surface side protective member removing step 1006, a device layer dividing step 1002, and a device pick-up step 1007, and the wafer preparation step 1001, the front surface side protective member providing step 1003, the base material removal step 1004, the back surface side protective member providing step 1005, a front surface side protective member removing step 1006, a device layer dividing step 1002, and a device pick-up step 1007 are carried out in this order.

[0084] In the wafer preparation step 1001 of the device manufacturing method according to the fourth embodiment, the device wafer 1 having the above-described configuration is prepared, as in the first embodiment.

[0085] In the front surface protective member disposing step 1003 of the device manufacturing method according to embodiment 4, a front surface protective member 13 is disposed on the front surface 21 of the device layer 2 of the device wafer 1, as in embodiment 3, and in the base material removing step 1004 of the device manufacturing method according to embodiment 4, the base material 3 of the device wafer 1 is removed to expose the back surface 22 of the device layer 2, as in embodiment 3.

[0086] In the back surface protection member disposing step 1005 of the device manufacturing method according to the fourth embodiment, similar to the modified example of the first embodiment, a second temporary adhesive 16-1 whose adhesive strength decreases when a second external stimulus is applied is applied to the back surface 22 of the device layer 2 of the device wafer 1, and as shown in FIG. 33 , the back surface protection member 15-1 is attached to the second temporary adhesive 16-1, thereby disposing the back surface protection member 15-1 on the back surface 22 of the device layer 2. In the fifth embodiment, similar to the modified example of the first embodiment, the back surface protection member 15-1 is made of a hard material and is formed in a disk shape with the same diameter as the device wafer 1. In the modified example, the back surface protection member 15-1 is made of glass, similar to the front surface protection member 13.

[0087] In the front surface protective member removal step 1006 of the device manufacturing method of embodiment 4, as in embodiment 2, etc., a first external stimulus is applied to the first temporary adhesive 14 to reduce the adhesive strength of the first temporary adhesive 14, and as shown in Figure 34, the front surface protective member 13 is peeled off from the surface 21 of the device layer 2 of the device wafer 1, thereby removing the front surface protective member 13.

[0088] The device layer dividing step 1002 in the device manufacturing method according to the fourth embodiment is, similarly to the third embodiment, a step of forming division grooves 9 that divide at least the device layer 2 into individual devices 5 along the planned division lines 4 after the base material removing step 1004 has been performed. In the device layer dividing step 1002 in the device manufacturing method according to the fourth embodiment, similarly to the third embodiment, division grooves 9 that divide the device layer 2 into individual devices 5 are formed as shown in FIG.

[0089] In the fourth embodiment, in the device layer dividing step 1002, the laser processing apparatus 40 performs ablation processing on the dividing lines 4 of the device wafer 1 to form the dividing grooves 9, but in the present invention, in the device layer dividing step 1002, the cutting apparatus may cut a cutting blade into the dividing lines 4 of the device layer 2 of the device wafer 1 to form the dividing grooves 9. Also, in the present invention, in the device layer dividing step 1002, the division grooves 9 may be formed by performing etching such as wet etching or dry etching on the dividing lines 4 of the device layer 2 of the device wafer 1.

[0090] In the device pick-up step 1007 of the device manufacturing method according to the fourth embodiment, a second external stimulus is applied to the second temporary adhesive 16-1 to reduce the adhesive strength of the second temporary adhesive 16-1, and the picker 60 suction-holds the devices 5, thereby picking up the devices 5 one by one from the back surface protection member 15-1. Note that in the device manufacturing method according to the fourth embodiment, similar to the second embodiment, a tape-attaching step 1011 may be performed to attach tape 18 to the back surface 15-2 of the back surface protection member 15-1, a back surface protection member dividing step 1012 may be performed to divide the back surface protection member 15-1 along the planned division lines 4, and in the device pick-up step 1007, the devices 5 may be picked up from the tape 18 together with the individualized back surface protection members 15-1.

[0091] In the device manufacturing method of embodiment 4, a surface side protective member 13 is disposed on the surface 21 of the device layer 2 in a surface side protective member disposing step 1003, the substrate 3 is removed in a substrate removing step 1004, and dividing grooves 9 are formed along the planned dividing lines 4 in a device layer dividing step 1002. Therefore, even while removing the substrate 3 from the device wafer 1, the device wafer 1 can be divided into individual devices 5 consisting of only the device layer 2.

[0092] In the device manufacturing method according to the fourth embodiment of the present invention, similarly to the second embodiment, tape 18 may be attached to back surface protection member 15-1, back surface protection member 15-1 may be divided into individual devices 5, and the devices 5 may be picked up from the tape together with the divided back surface protection member 15-1, so that back surface protection member 15-1 may be used for handling the devices 5.

[0093] The present invention is not limited to the above-described embodiments. That is, various modifications can be made without departing from the gist of the present invention. In the above-described embodiments, the first external stimulus is irradiation with ultraviolet light, and the second external stimulus is heating. However, the first external stimulus and the second external stimulus may be irradiation with ultraviolet light having different wavelengths, or heating to different temperatures. [Explanation of symbols]

[0094] 1. Device wafer 2. Device Layer 3 Base material 4 Planned division line 5 Devices 9 dividing groove 13 Surface protection material 15,15-1 Back side protection member 15-2 Back side 18 Tape 21 Surface 22 Back side 1001 Wafer Preparation Steps 1002 Device layer division step 1003 Surface side protective member disposing step 1004 Substrate removal step 1005 Rear surface protection member disposing step 1006 Surface side protective material removal step 1007-2 Device Pickup Step 1011 Tape application step 1012 Back side protection material division step

Claims

1. A method of manufacturing a device, comprising: a wafer preparation step of preparing a device wafer having, on a substrate, a device layer including an insulating layer, a silicon layer formed on the insulating layer, and a redistribution layer formed on the silicon layer, in which devices are formed in regions defined by a plurality of intersecting planned division lines; a surface-side protection member disposing step of disposing a surface-side protection member made of a hard material on the surface of the device layer; a substrate removing step of removing the substrate by at least one of grinding and polishing to expose a back surface of the device layer after the front surface side protective member providing step is performed; a device layer dividing step of forming a dividing groove along the planned dividing line to divide at least the device layer into individual devices after the base material removing step or before the front surface side protective member providing step; and manufacturing a device constituted only by the device layer.

2. a back surface protection member disposing step of disposing a back surface protection member on the back surface of the device layer from which the front surface protection member has been disposed and which has been divided into individual devices and from which the base material has been removed; a front surface side protective member removing step of removing the front surface side protective member after the back surface side protective member providing step is performed; The method for manufacturing the device according to claim 1 , comprising:

3. A method of manufacturing a device, comprising: a wafer preparation step of preparing a device wafer having, on a substrate, a device layer including an insulating layer, a silicon layer formed on the insulating layer, and a redistribution layer formed on the silicon layer, in which devices are formed in regions defined by a plurality of intersecting planned division lines; a surface-side protective member disposing step of disposing a surface-side protective member on the surface of the device layer; a substrate removing step of removing the substrate by at least one of grinding, polishing, and etching to expose a back surface of the device layer after the front surface side protective member providing step is performed; a device layer dividing step of forming a dividing groove along the planned dividing line to divide at least the device layer into individual devices after the base material removing step or before the front surface side protective member providing step; a back surface protection member disposing step of disposing a back surface protection member made of a hard material and thicker than the device layer on the back surface of the device layer having the front surface protection member disposed thereon and having been divided into individual devices and from which the base material has been removed; a front surface side protective member removing step of removing the front surface side protective member after the back surface side protective member providing step is performed; a back-side protective member dividing step in which, after the back-side protective member disposing step is performed and before or after the front-side protective member removing step is performed, the back-side protective member is divided along the planned dividing lines to form individual back-side protective members each having a device disposed on each of the individual back-side protective members; a tape-applying step of applying tape to a back surface of the back surface protection member before or after the back surface protection member dividing step and before the front surface protection member removing step; A device manufacturing method for manufacturing a device consisting only of the device layer, comprising: a device pick-up step for picking up the device together with the back-side protective member that has been singulated from the tape after performing the front-side protective member removal step.

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