Transfer device and transfer substrate

Abstract

To provide a transfer device and a transfer substrate that make an element be peeled securely from the transfer substrate and transfers it to a transfer destination substrate.SOLUTION: A transfer device for transferring an element 21 held by an ablation layer 24a of a transfer substrate 22 from the transfer substrate 22 to a transfer destination substrate 23 by generating ablation by irradiating the ablation layer 24a with a light beam flux B1 of active energy rays comprises: a transfer substrate gripping unit for gripping the transfer substrate 22; a transfer destination substrate gripping unit for gripping the transfer destination substrate 23 so that the ablation layer 24a of the transfer substrate 22 and the transfer destination substrate 23 face each other; and an activation energy ray irradiation unit for irradiating the ablation layer 24a of the transfer substrate 22 gripped by the transfer substrate gripping unit with the active energy rays B1. The activation energy ray irradiation unit irradiates a plurality of positions of a holding region in which the single element 21 is held at the ablation layer 24a with the light beam flux B1 of the active energy rays.SELECTED DRAWING: Figure 4

Description

[Technical Field]

[0001] The present invention relates to a transfer apparatus that irradiates a transfer substrate with light energy and transfers elements onto a transfer substrate by laser lift-off. [Background technology]

[0002] In recent years, semiconductor chips have been miniaturized to reduce costs, and efforts are being made to mount these miniaturized semiconductor chips with high precision. To mount these miniaturized chips at high speed, a technique known as laser lift-off is used, in which a laser is irradiated onto the bonding surface of a chip bonded to a transfer substrate to cause ablation, peeling the chip from the transfer substrate and transferring it to a transfer substrate by applying a force.

[0003] Patent Document 1 discloses an element transfer device that transfers elements using ablation technology. This element transfer device uses a laser irradiation device that has a laser irradiation unit that generates a laser beam, a reflection means that reflects the laser beam from the laser irradiation unit in a required direction, and a control means that controls the irradiation and non-irradiation of the laser beam in conjunction with the reflection means. The laser beam is selectively irradiated onto some of the elements arranged on a source substrate, causing ablation (explosion). This selective ablation transfers some of the elements onto a destination substrate. In other words, the elements are transferred from the source substrate to the destination substrate by laser lift-off.

[0004] Furthermore, Patent Document 2 discloses a technology in which a laser beam is irradiated onto a blistering layer provided on a transfer substrate and having an adhesive layer on the surface side, thereby generating blisters (bulges) in the blistering layer, and the occurrence of these blisters pushes out an item (element) adhered to the adhesive layer, thereby separating the item from the transfer substrate. [Prior art documents] [Patent documents]

[0005] [Patent Document 1] Japanese Patent Application Laid-Open No. 2006-041500 [Patent Document 2] Special Publication No. 2014-515883 Summary of the Invention [Problem to be solved by the invention]

[0006] However, in the element transfer devices shown in Patent Documents 1 and 2, the force with which the transfer substrate (original transfer substrate) holds the elements even after laser irradiation is stronger than the force that separates the elements, which could result in the elements not peeling off from the transfer substrate. In particular, when blisters form in the portion of the transfer substrate that holds the elements due to ablation, as shown in Figure 18, even if one blister 93 is formed by irradiating a holding region R that holds one element 91 on the transfer substrate 92 with a laser, the contact area between the blister 93 and the element 91 remains large, and the force that holds the element 91 at this contact surface (e.g., adhesive force) is stronger than the force that separates the element 91 (e.g., kinetic energy and gravity associated with the generation of the blister), resulting in the problem that the element 91 does not peel off from the transfer substrate 92.

[0007] In view of the above problems, the present invention has an object to provide a transfer apparatus and a transfer substrate that can reliably peel an element from a transfer substrate and transfer it to a transferee substrate. [Means for solving the problem]

[0008] In order to solve the above problems, the transfer device of the present invention is a transfer device that irradiates an ablation layer of a transfer substrate with active energy rays to cause ablation, thereby transferring an element held by the ablation layer from the transfer substrate to a transferred substrate, and is equipped with a transfer substrate holding unit that holds the transfer substrate, a transferred substrate holding unit that holds the transferred substrate so that the ablation layer of the transfer substrate and the transferred substrate face each other, and an active energy ray irradiation unit that irradiates active energy rays to the ablation layer of the transfer substrate held by the transfer substrate holding unit, and is characterized in that the active energy ray irradiation unit irradiates active energy rays at multiple locations in a holding area in the ablation layer that holds one element.

[0009] This transfer device can reliably reduce the contact area between the ablation layer and the element after irradiation with active energy rays, and can reliably peel the element from the transfer substrate.

[0010] In addition, the irradiation range of the active energy rays is preferably smaller than the holding area.

[0011] The ablation layer may also disappear due to ablation.

[0012] The ablation layer may also generate blisters upon ablation.

[0013] In addition, the active energy ray irradiation unit may control the location to which the active energy ray is irradiated so that the blister is formed for each irradiation of the active energy ray.

[0014] This prevents the blisters from joining together and suppressing a reduction in the contact area with the element.

[0015] The ablation layer may be configured with a plurality of independent holding portions, and the active energy rays may be irradiated individually onto the plurality of holding portions that hold one element.

[0016] This reduces the contact area between the element and the transfer substrate via the holding portion, thereby reducing the output of active energy rays required to transfer one element and reducing running costs.

[0017] In addition, the holding region of the ablation layer may include a mixture of holding portions that have a holding force for the element and that cause blisters when irradiated with active energy rays, and non-holding portions that do not have a holding force for the element and that do not cause blisters when irradiated with active energy rays.

[0018] This prevents the blisters from joining together and suppressing a reduction in the contact area with the element.

[0019] The active energy ray irradiation unit may irradiate the plurality of holding portions, each holding one element, with active energy rays in a predetermined order.

[0020] This allows the element to fly stably in a predetermined direction.

[0021] Furthermore, the active energy ray irradiation unit may irradiate the active energy rays to the plurality of holding portions that hold one element in order from the holding portion located closer to the outside to the holding portion located closer to the inside.

[0022] This prevents the part holding the element from being biased to the edge, allowing the element to fly stably in a predetermined direction.

[0023] The active energy ray irradiation unit may irradiate the plurality of holding portions that hold one element with active energy rays so that the irradiation locus of the active energy rays is spiral.

[0024] This allows the element to fly stably in a predetermined direction.

[0025] In addition, the active energy rays emitted from the active energy ray irradiation unit are converted into an energy ray bundle consisting of multiple active energy rays, and the energy ray bundle is preferably irradiated with active energy rays simultaneously to all of the holding portions that hold one element.

[0026] By doing so, the time required to transfer one element can be made relatively short.

[0027] Furthermore, the active energy ray irradiating unit may irradiate all of the holding portions that hold one element with active energy rays of uniform power.

[0028] This makes it possible to easily control the flying of the element in a predetermined direction with stability.

[0029] In addition, in order to solve the above-mentioned problems, the transfer device of the present invention is a transfer device that transfers a transfer object held on a transfer substrate to a transferee substrate using laser lift-off by irradiating light energy onto the transfer substrate, and is equipped with a laser light source that emits laser light that forms the light energy, and a light energy shift means that adjusts the irradiation position of the light energy on the transfer substrate, and the transfer object is held on the transfer substrate via a plurality of adhesive points provided on the surface of the transfer substrate facing the transfer object, and the laser light source transfers the transfer object to the transferee substrate arranged to face the transfer substrate across the transfer object by individually irradiating the light energy to the multiple adhesive points that hold one of the transfer objects.

[0030] This transfer device reduces the contact area between the transfer object and the transfer substrate via the adhesive points, thereby reducing the laser light output required to transfer one transfer object and reducing running costs.

[0031] In addition, in order to solve the above-mentioned problems, the transfer substrate of the present invention is a transfer substrate that holds elements with an ablation layer in which ablation occurs when irradiated with active energy rays, and is characterized in that the holding area in the ablation layer that holds one element includes a mixture of holding parts that have a holding force for the element and cause blisters when irradiated with active energy rays, and non-holding parts that do not have a holding force for the element and do not cause blisters due to active energy rays.

[0032] This transfer substrate can prevent the blisters from joining together in the holding area, thereby preventing a reduction in the contact area with the element. [Effects of the Invention]

[0033] The transfer device and transfer substrate of the present invention enable elements to be reliably peeled off from the transfer substrate and transferred to the transfer substrate. [Brief explanation of the drawings]

[0034] [Figure 1] 1 is a diagram illustrating a transfer device according to a first embodiment of the present invention. [Figure 2] 3A and 3B are diagrams illustrating the shape of a light beam on a real image plane of a laser beam in the transfer device of the first embodiment. [Figure 3] 1A and 1B are diagrams illustrating a holding form of a tip in a transfer device of the present invention. [Figure 4] 3A to 3C are diagrams illustrating a transfer form of a chip by the transfer device of the first embodiment. [Figure 5] FIG. 10 is a diagram illustrating a transfer device according to a second embodiment of the present invention. [Figure 6] 10A and 10B are diagrams illustrating a transfer form of a chip in a transfer device according to a second embodiment. [Figure 7] 10A and 10B are diagrams illustrating a transfer form of a chip in a transfer device according to a second embodiment. [Figure 8] FIG. 10 is a diagram illustrating a transfer device according to a third embodiment of the present invention. [Figure 9]10A to 10C are diagrams illustrating a process of peeling an element from a transfer substrate by a transfer apparatus according to a third embodiment. [Figure 10] 10A to 10C are diagrams illustrating a process of peeling an element from a transfer substrate by a transfer apparatus according to a third embodiment. [Figure 11] 10A to 10C are diagrams illustrating a process of peeling an element from a transfer substrate by a transfer apparatus according to another embodiment of the present invention. [Figure 12] 10A to 10C are diagrams illustrating a process of peeling an element from a transfer substrate by a transfer apparatus according to another embodiment of the present invention. [Figure 13] 10A and 10B are diagrams illustrating a transfer substrate according to another embodiment of the present invention. [Figure 14] 10A and 10B are diagrams illustrating a transfer form of a chip according to another embodiment of the present invention. [Figure 15] 10A and 10B are diagrams illustrating a transfer form of a chip according to another embodiment of the present invention. [Figure 16] 10A and 10B are diagrams illustrating a transfer form of a chip according to another embodiment of the present invention. [Figure 17] 10A to 10C are diagrams illustrating a process of peeling an element from a transfer substrate by a transfer apparatus according to another embodiment of the present invention. [Figure 18] 1A to 1C are diagrams illustrating a process of peeling an element from a transfer substrate using a conventional transfer device. DETAILED DESCRIPTION OF THE INVENTION

[0035] (First embodiment) A transfer device 1 according to a first embodiment of the present invention will be described with reference to Fig. 1. Fig. 1(a) is a side view of the transfer device 1, and Fig. 1(b) is a top view of the transfer device 1.

[0036] The transfer device 1 of this embodiment transfers a chip 21 (element) held by the transfer substrate to the transfer substrate by using laser lift-off, by irradiating optical energy consisting of a light spot onto any position in the in-plane direction of the irradiated surface of the transfer substrate. The optical energy is a type of activation energy in this description.

[0037] The transfer device 1 has a laser irradiation unit 11, a beam expander 12, a phase diffraction element 13, a zoom lens 14, a collimating lens 15, a galvanometer mirror 16, and an Fθ lens 17. Laser light B emitted from the laser irradiation unit 11 passes through the beam expander 12, the phase diffraction element 13, the zoom lens 14, the collimating lens 15, the galvanometer mirror 16, and the Fθ lens 17 in this order before reaching the irradiated surface S. During this time, the single laser light B is branched by the phase diffraction element 13 into a ray bundle B1 (an energy ray bundle) of multiple light rays. In this description, the separation of a chip from a substrate holding the chip by ablation (laser ablation) caused by laser irradiation is referred to as laser lift-off.

[0038] In this embodiment, the irradiated surface S is the surface (bottom surface) of the transfer substrate 22 that holds the chip 21, and the light beam B1 passes through the transfer substrate 22 and reaches the irradiated surface S. In this description, the collection of areas on the irradiated surface S that are irradiated with the light beams is called a light beam image 2, as shown in FIG. 1(b). As the light beam image 2 is formed on the irradiated surface S, light energy is irradiated onto the irradiated surface in accordance with the irradiation area of ​​each light beam that constitutes the light beam image 2.

[0039] In this description, the vertical direction is called the Z-axis direction, the horizontal direction in which the laser beam B is emitted from the laser irradiation unit 11 is called the X-axis direction, and the horizontal direction perpendicular to the X-axis direction is called the Y-axis direction.

[0040] The laser irradiation unit 11 is an active energy irradiation unit in this description, and is a device that emits a single laser beam B, which is an active energy ray, and in this embodiment, emits pulsed laser beams such as a YAG laser or a visible light laser. Note that the active energy ray is not limited to visible light as in this embodiment, and ultraviolet rays, electron beams, etc. can also be used.

[0041] The beam expander 12 is a combination of lenses for expanding the diameter of the laser light B emitted from the laser irradiation unit 11, and the beam expander 12 adjusts the diameter of the laser light B so that the laser light B having a diameter suitable for branching by the phase diffraction element 13 is incident on the phase diffraction element 13.

[0042] The phase diffraction element (Diffractive Optical Element: DOE) 13 is configured by combining multiple diffraction gratings with different grating periods, and converts the shape of the laser beam B into an arbitrary shape by utilizing the diffraction phenomenon of light. The phase diffraction element 13 used in this embodiment converts one laser beam B into a ray bundle B1 consisting of multiple light rays arranged in a matrix at an equal pitch on a predetermined plane (on the YZ plane when the laser beam B is incident from the X-axis direction). Here, with the phase diffraction element 13 having the above configuration, not only the shape of the light rays but also the power of the light rays can be designed arbitrarily, and in this embodiment, the phase diffraction element 13 is designed so that the power of each light beam forming the ray bundle B1 is uniform.

[0043] A DOE is a device that splits laser light into multiple beams obtained as diffraction patterns using a diffraction grating, and obtains a light intensity distribution consisting of a desired diffraction pattern on a virtual plane located a predetermined distance from the DOE. Therefore, the desired light intensity distribution is often not obtained on a plane other than the predetermined distance. Therefore, although the expression "splitting laser light into multiple beams" used in this specification is not strictly correct, for convenience, obtaining a light intensity distribution consisting of multiple diffraction patterns using the DOE will be simply expressed as "splitting into multiple beams."

[0044] 2 is a cross-sectional view taken along line aa in FIG. 1(a), showing the real image plane of ray bundle B1. As described above, in this embodiment, the phase diffraction element 13 converts the laser beam B into ray bundle B1, which is made up of a plurality of rays arranged in a matrix at an equal pitch on the YZ plane, and on the real image plane, light spots equal in number to the number of rays forming ray bundle B1 are arranged at an equal pitch on the YZ plane, as shown by pitch P1 in FIG. 2(a). Note that, although FIG. 2 shows the rays forming ray bundle B1 as arranged in a 3 × 3 matrix, the number of rays may be greater than this.

[0045] In this embodiment, as described above, the zoom lens 14, which is a variable-focus optical system, is provided immediately downstream of the phase diffraction element 13. By changing the focal length of this variable-focus optical system (the magnification of the zoom lens 14), it is possible to increase or decrease the pitch of the light spots, and as shown in Fig. 2(b) for the ray bundle B1', whose spacing between rays is pitch P1', it is possible to arbitrarily change or adjust the pitch of each ray of the ray bundle that constitutes the light beam image 2 compared to pitch P1 in Fig. 2(a).

[0046] On the other hand, adjusting the spacing between each light beam using the zoom lens 14 also changes the area of ​​the irradiation region of the light energy irradiated onto the irradiated surface S, and there is a possibility that this area will not fall within an acceptable range. Here, in this embodiment, an aperture member 18 is provided in which openings (apertures 19) are provided in accordance with the arrangement of each light beam on the real image plane so that the dimensions and shape of each light beam of the light beam bundle B1 that forms the light beam image 2 irradiated onto the irradiated surface S are predetermined. Specifically, the aperture member is provided so that an aperture member 18 in which apertures 19 are arranged at pitch P1 is used for a light beam bundle B1 in which the spacing between each light beam is pitch P1 as shown in FIG. 2(a), and an aperture member 18' in which apertures 19' are arranged at pitch P1' is used for a light beam bundle B1' in which the spacing between each light beam is pitch P1' as shown in FIG. 2(b). By doing so, it is possible to irradiate the irradiated surface S with light energy at a pitch suitable for the application and in an irradiation range (dimensions and shape) suitable for the application.

[0047] 1, in this embodiment, each ray of the ray bundle B1, which passes through the zoom lens 14, a variable-focus optical system, and then forms an image once, is converted into parallel light by the collimator lens 15, and then condensed by the Fθ lens 17 to form an image again on the illuminated surface S. In this description, an optical system that re-images the light rays is called an imaging optical system, and in this embodiment, the combination of the collimator lens 15 and the Fθ lens 17 corresponds to this imaging optical system. In addition, in this embodiment, a galvanometer mirror 16 is provided between the collimator lens 15 and the Fθ lens 17.

[0048] The galvanometer mirror 16 has two mirrors, and by controlling the positions and angles of these mirrors, it outputs the incident light beam in any direction. In this embodiment, the galvanometer mirror 16 functions as a light energy shifting means that changes the position on the irradiation surface S where the light energy is irradiated. By having such a light energy shifting means, it is possible to adjust the irradiation position of the light energy on the transfer substrate 22 having the irradiation surface S.

[0049] A transfer substrate 22 is arranged downstream of the Fθ lens 17 in the optical path of the laser light B emitted from the laser irradiation unit 11, and a transferred substrate 23 is arranged further downstream of the transfer substrate 22 and directly below the transfer substrate 22. The transfer substrate 22 and the transferred substrate 23 are held by holding means (a transfer substrate holding portion and a transferred substrate holding portion) not shown.

[0050] The transfer substrate 22 is a substrate made of glass or the like that is capable of transmitting the light beam B1, and holds the chip 21 on its underside. The chip 21 is, for example, a semiconductor chip, and more specifically, an LED chip or the like that constitutes each of the RGB pixels in a display panel.

[0051] 3A and 3B are diagrams illustrating how the transfer substrate 22 holds the chip 21, with FIG. 3A being a front view and FIG. 3B being a top view.

[0052] Adhesive points 24a (also referred to as holding portions in this description) are provided on the underside of the transfer substrate 22, and the surfaces of the adhesive points 24a adhesively hold the chip 21, thereby forming a configuration in which the transfer substrate 22 holds the chip 21 via the adhesive points 24a. Note that, as shown in FIG. 1(a), one transfer substrate 22 holds multiple chips 21.

[0053] Here, in the transfer substrate 22 of this embodiment, the entire surface of the chip 21 is not adhesively held as shown in Figures 3(a) and 3(b), but rather the surface area of ​​the adhesive points 24a is sufficiently smaller than the area of ​​the surface of the chip 21 facing the transfer substrate 22, and one chip 21 is adhesively held by a plurality of independent adhesive points 24a. In other words, a holding area that holds one chip 21 is formed by a plurality of adhesive points 24a (holding portions). Note that in Figure 3(b), one chip 21 is adhesively held by 3 x 3 adhesive points 24a. The surface shape of each adhesive point 24a may be circular as shown in Figure 3(b) or may be another shape.

[0054] The transferred substrate 23 may be a circuit board on which the chip 21 is finally mounted, or may be an intermediate substrate on which the chip 21 is held intermediately as transfer is repeated multiple times before being mounted on the circuit board. The transferred substrate 23 is disposed opposite the transfer substrate 22 with the chip 21 sandwiched therebetween, and the chip 21 separated from the transfer substrate 22 lands on the surface of the transferred substrate 23 facing the transfer substrate 22. A bonding material or adhesive such as ACF (anisotropic conductive film) is provided on this landing surface so that the chip 21 can be held.

[0055] Next, the transfer form of the chip 21 by the transfer device 1 will be described with reference to FIGS. 4(a) and 4(b).

[0056] Laser light B is emitted from the laser irradiation unit 11, and a light image 2 is formed on the irradiated surface S, which is the boundary between the transfer substrate 22 and the adhesive points 24a (i.e., light energy is irradiated), causing the adhesive points 24a to break down and generate gas. In other words, laser ablation occurs. This gas generation biases the chip 21 when it separates from the transfer substrate 22. A layer that undergoes ablation due to irradiation with active energy rays, such as the adhesive points 24a, is also referred to as an ablation layer in this description.

[0057] In this embodiment, as shown in FIG. 4(a), the number of light rays constituting the light ray image 2 is the same as the number of adhesive points 24a, and the light beam B1 is adjusted by the phase diffraction element 13 and the zoom lens 14 so that the pitch of each light ray (dimension P in FIG. 4(a)) is the same as the pitch of the adhesive points 24a. As a result, light energy is individually and simultaneously irradiated onto all of the adhesive points 24a that adhesively hold one chip 21. Then, by emitting laser light B once, the chip 21 is laser lifted off, flies in a predetermined direction (directly below), and lands on the transfer substrate 23. As a result, the chip 21 is transferred from the transfer substrate 22 to the transfer substrate 23.

[0058] Then, the light energy irradiation position is moved by the dimension of the chip 21 by the light energy shifting means (galvanometer mirror 16 in this embodiment), and thereafter the laser irradiation unit 11 emits laser light B in accordance with the period of the emitted pulse, whereby the light ray image 2 is irradiated onto the adjacent chip 21 as shown in Fig. 4(b), and transferred onto the transfer substrate 23. By repeating the movement of the light energy irradiation position and the emission of laser light B in this manner, the chips 21 are successively transferred onto the transfer substrate 23.

[0059] Here, it is preferable that the irradiation area of ​​each light beam constituting the light beam image 2 is approximately the same as or slightly larger than the surface area of ​​the adhesive point 24a (extending about 2 to 10 μm beyond the adhesive point). To achieve this area relationship, the shape of the adhesive point 24a is set according to the irradiation area of ​​the light beam, or the irradiation area of ​​the light beam is set by the aperture member 18 according to the shape of the adhesive point 24a. This allows the adhesive point 24a to be completely separated from the chip 21 by irradiation with light energy.

[0060] On the other hand, if the irradiation area of ​​the light beam is too small compared to the surface area of ​​the adhesive point 24a, laser ablation may occur only on a part of the adhesive point 24a, in which case the chip 21 may remain held to the transfer substrate 22 via the adhesive point 24a and not be laser lifted off, or even if it is laser lifted off, the chip 21 may fly in a direction tilted from the specified direction.

[0061] In this embodiment, the ray bundle B1 is preferably configured so that the power of each laser beam is uniform, which makes it possible to uniformize the timing at which the chip 21 separates from each adhesion point 24a and the thrust generated during laser ablation, thereby enabling the chip 21 to fly stably in a predetermined direction during laser lift-off.

[0062] (Second embodiment) A transfer device 10 according to a second embodiment of the present invention will be described with reference to Fig. 5. Fig. 5(a) is a side view of the transfer device 10, and Fig. 5(b) is a top view of the transfer device 10. Components that are the same as those in the transfer device 1 of the first embodiment are given the same reference numerals.

[0063] The transfer device 10 has a laser irradiation unit 11, a beam expander 12, a zoom lens 14, a collimating lens 15, a galvanometer mirror 16, and an Fθ lens 17. Laser light B emitted from the laser irradiation unit 11 passes through the beam expander 12, the zoom lens 14, the collimating lens 15, the galvanometer mirror 16, and the Fθ lens 17 in this order before reaching an irradiated surface S, which is the lower surface of a transfer substrate 22. That is, unlike the transfer device 1 of the first embodiment, the transfer device 10 does not have a phase diffraction element 13. Therefore, the laser light B emitted from the laser irradiation unit 11 is not split into a ray bundle B1, and only one ray constitutes a ray image 2 on the irradiated surface S. The irradiation position of this ray image 2 on the irradiated surface S is controlled by a galvanometer mirror 16, which is an optical energy shifting means.

[0064] The transfer form of the chip 21 by this transfer device 10 will be explained with reference to FIGS. 6(a) to 6(c).

[0065] In this transfer device 10, the light beam image 2 is irradiated (i.e., light energy is irradiated) individually and sequentially to cause laser ablation on the multiple adhesive points 24a that hold one chip 21. Then, when the light beam image 2 is irradiated on the last remaining adhesive point 21, the chip 21 is completely separated from the transfer substrate 22, flies to the transferee substrate 23 by laser lift-off, and is transferred to the transferee substrate 23.

[0066] Figures 6(a) to 6(c) explain the transfer form of the chip 21 when the chip 21, transfer substrate 22, and adhesive points 24a are viewed from the side. In Figures 6(a) to 6(c), three adhesive points 24a are shown to hold one chip 21 together, and as shown in Figure 6(a), a light image 2 is first irradiated onto the adhesive point 24a on the left end, causing laser ablation.

[0067] Next, as shown in FIG. 6(b), the light image 2 is irradiated onto the adhesive point 24a at the right end, thereby leaving the adhesive point 24a in the center, which holds the chip 21.

[0068] Finally, as shown in FIG. 6(c), the light beam image 2 is irradiated onto the central adhesive point 24a, and the chip 21 is separated from the transfer substrate 22 and transferred onto the transfer substrate 23.

[0069] In this transfer mode in which optical energy is irradiated one by one to the multiple adhesive points 24a that hold one chip 21, the thrust applied to the chip 21 during laser lift-off is the thrust generated when one adhesive point 24a is laser ablated, so the chip 21 flies to the transferred substrate 23 with a relatively small thrust. As a result, it is possible to prevent the chip 21 from cracking due to the impact when it lands on the transferred substrate 23.

[0070] Furthermore, by controlling the irradiation of light energy so that the adhesive point 24a that holds the center of the chip 21 remains until the end, as shown in Figures 6(a) to 6(c), it is possible to prevent the part holding the chip 21 from being biased toward the edge.As a result, when light energy is irradiated to the last adhesive point 24a and the chip 21 is laser lifted off, the chip 21 flies stably in the specified direction.

[0071] 6(a) to 6(c), there are only three adhesive points 24a in one direction that hold one chip 21, but in reality, it is assumed that the adhesive points 24a are arranged at a pitch of 0.1 mm for a chip 21 having an area of ​​2 mm x 2 mm. In this case, the number of adhesive points 24a is 20 x 20. In such a case, in order to leave the adhesive points 24a that hold the center of the chip 21 until the end, it is advisable to irradiate the light energy 2 sequentially, for example, from the adhesive points 24a located on the outer side to the adhesive points 24a located on the inner side.

[0072] More specifically, as shown in Figure 7, it is preferable to irradiate the light beam image 2 to the multiple adhesive points 24a that hold one chip 21 so that the trajectory L of light energy irradiation is spiral. By doing so, it is possible to always prevent the part of the chip 21 that is held from being biased to the edge until the last adhesive point 24a is irradiated with light energy, and ultimately to make the chip 21 fly stably in the specified direction.

[0073] Next, the effects of the transfer devices in the first and second embodiments will be described below.

[0074] The transfer device 1 and the transfer device 10 transfer the chip 21 held by the transfer substrate 22 to the transferee substrate 23 using laser lift-off by irradiating the transfer substrate 22 with light energy, and are equipped with a laser irradiation unit 11 (active energy ray irradiation unit) that emits laser light B that forms light energy, and a light energy shift means 16 that adjusts the irradiation position of the light energy on the transfer substrate 22, and the chip 21 is held on the transfer substrate 22 via a plurality of adhesive points 24a provided on the surface of the transfer substrate 22 that faces the chip 21 (irradiated surface S), and the laser light source 11 transfers the chip 21 to the transferee substrate 23 that is arranged to face the transfer substrate 22 across the chip 21 by individually irradiating light energy to the multiple adhesive points 24a that hold one chip 21.

[0075] This transfer device 1 and transfer device 10 can reduce the contact area between the chip 21 and the transfer substrate 22 via the adhesive point 24a, thereby reducing the output of the laser light B required to transfer one chip 21 and enabling the chip 21 to be reliably transferred to the transfer substrate 23 while reducing running costs.

[0076] The transfer device 1 further includes a phase diffraction element 13 that converts the laser beam B emitted from the laser light source 11 into a ray bundle B1 consisting of multiple light beams, and the ray bundle B1 simultaneously irradiates light energy onto all of the adhesion points 24a that hold one chip 21. This allows the time required for laser lift-off of one chip 21 to be relatively short.

[0077] Furthermore, in the transfer device 10, the laser light source 11 irradiates light energy sequentially from the outermost adhesive point 24a to the innermost adhesive point 24a, which hold one chip 21. This prevents the portion holding the chip 21 from being biased to the edge, and allows the chip 21 to fly stably in a predetermined direction.

[0078] Furthermore, in the transfer device 10, the laser light source 11 irradiates light energy to the multiple adhesive points 24a that hold one chip 21 so that the trajectory of the light energy irradiation is spiral. This prevents the portion holding the chip 21 from being biased to the edge until the last adhesive point 24a is irradiated with light energy, allowing the chip 21 to fly stably in a predetermined direction.

[0079] Furthermore, in the transfer device 1 and the transfer device 10, the laser light source 11 irradiates light energy of uniform power to all of the adhesive points 24a that hold one chip 21. This makes it easy to control and allows the chip 21 to fly stably in a predetermined direction.

[0080] (Third embodiment) A transfer device according to a third embodiment of the present invention will be described with reference to FIG.

[0081] The transfer device 100 includes a laser irradiation unit 102 that irradiates laser light 101, a transfer substrate holding unit 103 that holds a transfer substrate 22 and is movable at least in the X-axis and Y-axis directions, a transferee substrate holding unit 104 that is located below the transfer substrate holding unit 103 and holds a transferee substrate 23 so as to face the transfer substrate 22 with a gap, and a control unit (not shown).By irradiating the transfer substrate 22 with laser light 101, ablation is caused in the transfer substrate, and the chip 21 is transferred from the transfer substrate 22 to the transferee substrate 23.

[0082] The laser irradiation unit 102 is one embodiment of the active energy ray irradiation unit of the present invention, and is a device that irradiates laser light 101 such as an excimer laser, which is an active energy ray, and is fixedly provided on the transfer device 100. In this embodiment, the laser irradiation unit 102 irradiates spot-shaped laser light 101, and the irradiation position of the laser light 101 in the X-axis direction and the Y-axis direction is controlled by a galvanometer mirror 105 and an fθ lens 106, the angles of which are adjusted by a control unit, to selectively irradiate chips 21 arranged in plurality on a transfer substrate 22 held by a transfer substrate holder 103. When the laser light 101 is incident on the chips 21 on the transfer substrate 22, ablation occurs between the transfer substrate 22 and the chips 21 due to the application of active energy (light energy), and the chips 21 are transferred from the transfer substrate 22 to a transferee substrate 23.

[0083] The transfer substrate gripper 103 has an opening and sucks and grips the vicinity of the outer periphery of the transfer substrate 22. Laser light 101 emitted from a laser irradiation unit 102 can be applied to the transfer substrate 22 held by the transfer substrate gripper 103 through this opening.

[0084] The transfer substrate 22 is a substrate made of glass or the like that is capable of transmitting the laser beam 101, and holds the chip 21 on its underside. An ablation layer 24 (described later) is formed on the surface of the transfer substrate 22 that holds the chip 21, and the surface of the ablation layer 24 has adhesive properties. The adhesive force of the surface of the ablation layer 24 serves as a holding force for the chip 21, adhesively holding the chip 21.

[0085] Furthermore, the transfer substrate gripping part 103 is moved by a movement mechanism (not shown) relative to the transferred substrate gripping part 104 in at least the X-axis direction and the Y-axis direction. A control part (not shown) controls this movement mechanism to adjust the position of the transfer substrate gripping part 103, thereby adjusting the relative position of the chip 21 held on the transfer substrate 22 with respect to the transferred substrate 23.

[0086] The transferred substrate holding unit 104 has a flat upper surface, and during the transfer process of the chip 21, holds the transferred substrate 23 so that the ablation layer 24 of the transfer substrate 22 and the chip 21 held by the ablation layer 24 face the transferred surface of the transferred substrate 23. The transferred substrate holding unit 104 has a plurality of suction holes on its upper surface, and holds the back surface of the transferred substrate 23 (the surface to which the chip 21 is not transferred) by suction force.

[0087] Here, the transfer substrate 23 in this embodiment is a substrate made of a material such as glass, and the transfer surface (the surface that receives the chip 21) has adhesiveness and adhesively holds the chip 21 transferred from the transfer substrate 22.

[0088] In this embodiment, only the transfer substrate gripping part 103 moves in the X-axis and Y-axis directions, thereby causing relative movement between the transfer substrate gripping part 103 and the transferred substrate gripping part 104. However, if the dimensions of the transferred substrate 23 are large and the entire surface of the transferred substrate 23 cannot be positioned directly under the irradiation range of the laser light 101, the transferred substrate gripping part 104 may also be provided with a movement mechanism in the X-axis and Y-axis directions.

[0089] The process of peeling the chip 21 from the transfer substrate 22 by the transfer device 100 having the above configuration will be described with reference to FIG.

[0090] As described above, the ablation layer 24 is formed on the surface of the transfer substrate 22 that holds the chip 21. The ablation layer 24 has adhesiveness on its surface, and ablation occurs when the laser beam 11 is irradiated onto the ablation layer 24.

[0091] In this embodiment, the ablation layer 24 is formed on the entire surface of the transfer substrate 22 that holds the chip 21. As shown in Fig. 9(a), the area in the ablation layer 24 that holds one chip 21 is referred to as a holding region R in this description.

[0092] In this embodiment, when the ablation layer 24 is irradiated with the laser beam 101, the material of the ablation layer 24 decomposes near the interface between the ablation layer 24 and the main body of the transfer substrate 22, generating gas. In other words, ablation occurs. In contrast, the surface side of the ablation 24 remains. As a result, a blister 25 (bulge) corresponding to the irradiation area BR of the laser beam 101 is formed, as shown in FIG. 9(b).

[0093] In this embodiment, as shown in FIG. 9(b), the irradiation range BR of the laser beam 101 is smaller than the holding region R, and the range in which blisters 25 are generated by a single irradiation of the laser beam 101 is also smaller than the holding region R. In this embodiment, when the chip 21 is transferred from the transfer substrate 22 to the transferee substrate 23, the laser beam 101 is irradiated at multiple locations within the holding region R. At this time, the control unit controls the galvanometer mirror 105 and the like so that the irradiation locations of the laser beam 101 within the holding region R are appropriately spaced apart, whereby blisters 25 generated by irradiation of the laser beam 101 can be formed independently for each irradiation of the laser beam, as shown in FIG. 9(c). In other words, the blisters 25 can be formed individually without merging with each other.

[0094] 9(c), when blisters 25 are formed in multiple locations within the holding region R, causing the chip 21 to lift off the transfer substrate 22, the contact areas between the ablation layer 24 and the chip 21 are limited to the vicinity of the apex of each blister 25, and the contact area between the ablation layer 24 and the chip 21 is significantly reduced compared to before ablation. Also, compared to when one blister 93 is formed within the holding region R as shown in FIG. 18, the contact area after laser light irradiation is significantly smaller.

[0095] Here, the adhesive holding force of chip 21 by ablation layer 24 is roughly proportional to the contact area, so the adhesive holding force is significantly reduced after the formation of blisters 25. When this adhesive holding force becomes smaller than the force that separates chip 21, which is the sum of the kinetic energy and gravity applied to chip 21 due to the formation of blisters 25, chip 21 peels off from transfer substrate 22 and is transferred to transferee substrate 23, as shown in Figure 9(d).

[0096] As described above, by irradiating multiple locations within holding region R with laser light 101 having an irradiation range BR smaller than holding region R to cause ablation, it is possible to reliably reduce the contact area between ablation layer 24 and chip 21, and to reliably peel chip 21 from transfer substrate 22. Furthermore, since there is no need to increase the laser diameter, it is possible to prevent an increase in running costs.

[0097] FIG. 10 is a view taken along the line AA in FIG. 9(a), and shows the procedure for irradiating the laser light 101 to transfer one chip 21 in the transfer device 100 of this embodiment.

[0098] 10 shows that laser light 101 having an irradiation range BR is irradiated nine times within holding region R of ablation layer 24. In this embodiment, the laser light 101 is irradiated sequentially from the outside to the inside of holding region R, as shown by a spiral trajectory L. Note that FIG. 10 shows that immediately after the start of transfer, ablation has occurred only in the upper left irradiation range BR, which is the starting point of the nine irradiation ranges BR.

[0099] When the laser beam 101 is irradiated sequentially in this manner, the blisters 25 are formed in accordance with the order of irradiation of the laser beam 101, but by irradiating the laser beam 101 from the outside to the inside as in this embodiment, it is possible to prevent the chip 21 from becoming cantilevered in the process until all the blisters 25 are formed. This prevents the direction in which the chip 21 falls from varying when it is peeled off, and allows the chip 21 to be transferred to the transfer substrate 23 with good positional accuracy.

[0100] 11 shows the procedure for irradiating laser light 101 in another embodiment. In this embodiment, laser light 11 is irradiated simultaneously to all irradiation points within holding region R, thereby simultaneously forming multiple blisters 25. By forming all blisters 25 simultaneously in this manner and peeling off chips 21, as with the above, it is possible to prevent the falling direction of chips 21 from varying when peeled off, and to transfer chips 21 to transfer substrate 23 with good positional accuracy.

[0101] Here, the transfer device 100 of the present invention is not limited to a form in which blisters 25 are formed in the ablation layer 24 by irradiation with the laser beam 101. It may also be a form in which the entire ablation layer 24 within the irradiation range BR is decomposed and eliminated by ablation, as shown in Fig. 12. Even in this case, by irradiating multiple locations within the holding region R with the laser beam 101 having the irradiation range BR, the ablation layer 24 gradually disappears in each irradiation range BR as shown in Figs. 12(a) to 12(c), thereby reliably reducing the contact area between the ablation layer 24 and the chip 21. Then, when the adhesive holding force of the ablation layer 24 on the chip 21, which is proportional to the contact area, becomes smaller than the force that separates the chip 21, the chip 21 peels off from the transfer substrate 22 and is transferred to the transfer substrate 23, as shown in Fig. 12(d).

[0102] Even in this embodiment, by irradiating the holding area R with laser light 101 in the order from the outside to the inside, and by irradiating all irradiation points within the holding area R with laser light 101 simultaneously, the chip 21 can be transferred to the transfer substrate 23 with high positional accuracy.

[0103] Next, a transfer substrate 22 according to another embodiment of the present invention is shown in FIG.

[0104] In the above-described embodiment, the ablation layer 24 is formed on the entire surface of the transfer substrate 22 on the side that holds the chip 21. In contrast, in the transfer substrate 22 of this embodiment, the holding region R contains a mixture of holding portions 24a that have adhesive holding power for the chip 21 and that produce blisters 25 when irradiated with laser light 101, and non-holding portions 24b that do not have adhesive power for the chip 21 and therefore do not produce ablation or blisters even when irradiated with laser light 101. In this embodiment, the holding portions 24a are arranged in a staggered pattern, and each holding portion 24a is separated by a non-holding portion 24b.

[0105] Then, as shown in FIG. 13, each holding portion 24a is irradiated with laser light 101 having an irradiation range BR, and blisters 25 are formed in each holding portion 24a, thereby peeling the chip 21 from the transfer substrate 22.

[0106] In this way, the holding portions 24a and the non-holding portions 24b are mixed, and the non-holding portions 24b prevent the blisters 25 formed in each holding portion 24a from coalescing with each other. As a result, the chip 21 is ultimately held by multiple small blisters 25, as in Figure 9(c), and the contact area between the ablation layer 24 and the chip 21 can be significantly reduced compared to before irradiation with the laser light 101.

[0107] Furthermore, since the non-holding portion 24b exists, the number of irradiation points of the laser light 101 required to peel off the chip 21 is reduced compared to a configuration in which the entire holding region R is an ablation layer 24, and therefore it is possible to reduce the transfer time and running costs.

[0108] Furthermore, in the process of forming the transfer substrate 22 of this embodiment, first, an ablation layer 24 is formed on the entire surface of the transfer substrate 22 on the side that holds the chip 21, as in the previous embodiment. That is, the non-holding portions 24b are originally made of the same material as each of the holding portions 24a. Then, ultraviolet light is selectively irradiated onto the portions corresponding to the non-holding portions 24b, causing those portions to harden. This forms the non-holding portions 24b that are non-adhesive and do not cause ablation.

[0109] By using the above-described transfer device and transfer substrate, it is possible to reliably peel the element from the transfer substrate and transfer it to the transfer substrate.

[0110] The transfer device and transfer substrate of the present invention are not limited to the above-described configurations and may be of other configurations within the scope of the present invention. For example, in the transfer device 1 of the first embodiment, the light beam image 2 formed by the phase diffraction element 13 does not necessarily have to have light beams arranged in a matrix as shown in Figure 2. For example, the light beams may be arranged in a staggered pattern in accordance with the arrangement of the adhesive portions 24.

[0111] The transfer substrate holding means may also function as light energy shifting means by moving the transfer substrate 22 in the X-axis and Y-axis directions to change the relative position with respect to the light beam image 2. The transferred substrate holding means may also be provided with a mechanism for moving the transferred substrate 23 in the X-axis and Y-axis directions, and the position on the transferred substrate 23 where the chip 21 is transferred may be adjusted.

[0112] Furthermore, even in a configuration in which multiple light energies are irradiated simultaneously, as in the transfer device 1 of the first embodiment, the light energies do not necessarily have to be irradiated simultaneously to all of the adhesive points 24 that hold one chip 21. For example, as shown in Figure 14, the number of laser beams that form the light beam B1'' (2 x 2 in Figure 8) may be less than the number of adhesive points 24a that hold the chip 21 (6 x 6 in Figure 8), and the chip 21 may be separated from the transfer substrate 22 by sequentially irradiating multiple light energies.

[0113] Furthermore, the time intervals between irradiation of the light energy may be uniform or may not be uniform when sequentially irradiating the plurality of adhesive points 24a that hold one chip 21. For example, the last time interval may be set longer than the other time intervals in order to fly the chip 21 stably in a predetermined direction.

[0114] Furthermore, when irradiating light energy sequentially to the multiple adhesive points 24a that hold one chip 21, the order of irradiation is not necessarily limited to starting from the adhesive points 24a located closer to the outside to the adhesive points 24a located closer to the inside.

[0115] In the above description, the irradiation range of the light energy is a spot, but it may be a line. In this case, it is preferable that the adhesive points are also linear, like adhesive points 24' shown in FIG.

[0116] In the above explanation, the adhesive points 24a irradiated with the laser beam B or the ray bundle B1 are completely annihilated, but this is not limiting. Laser ablation may occur only at the contact surface between the substrate W and the adhesive points 24 on the transfer substrate 22, as shown in Fig. 16, and the adhesive points 24a may remain on the chip 21 side even after irradiation with the laser beam B or the ray bundle B1. In this way, the adhesive points 24a remaining on the chip 21 will later stick to another substrate W, allowing the transfer of the chip 21 by laser lift-off to be performed again.

[0117] Furthermore, for example, in the third embodiment, the power of the laser light 101 irradiated to multiple locations in the holding region R may be uniform, or may be non-uniform, for example, the power being greater closer to the center of the holding region R.

[0118] 13, the holding portions 24a are arranged in a staggered pattern, but the arrangement is not limited thereto and may be, for example, a matrix pattern. They may also be arranged irregularly. Furthermore, the holding portions 24a do not need to be completely separated from one another, and for example, their corners may be slightly connected to one another as long as it is possible to prevent the blisters 25 from coalescing.

[0119] In addition, in the above description, the irradiation range BR of the laser beam 101 is smaller than the holding region R, but this is not necessarily limited to this, and the irradiation range BR of the laser beam 101 may be larger than the holding region R. As shown in Figures 17(a) and 17(b), a form may be adopted in which ablation occurs sequentially at multiple locations in the holding region R by irradiating the laser beam 101 while slightly shifting the irradiation range BR. [Explanation of symbols]

[0120] 1. Transcription device 2 Ray image 10 Transcription device 11 Laser irradiation section (active energy ray irradiation section) 12 Beam Expander 13 Phase Diffraction Element 14 Zoom lens (variable focus optical system) 15 Collimating lens 16 Galvanometer mirror (light energy shifting means) 17 Fθ lens 18 Aperture member 18' Aperture Member 19 aperture 19' aperture 21 Chip (element) 22 Transfer substrate 23 Transferred substrate 24 Ablation Layer 24a Adhesive point (holding area) 24b Retained part 25 Blisters 91 elements 92 Transfer substrate 93 Blister 100 Transfer device 101 Laser light (active energy rays) 102 Laser irradiation unit (active energy ray irradiation unit) 103 Transfer substrate holder 104 Transferred substrate gripping part 105 Galvanometer Mirror 106 Fθ lens B Laser light B1 Ray flux B1' Ray bundle B1'' ray bundle BR irradiation range R holding area L locus S Irradiated surface W Base material

Claims

1. a transfer device that irradiates an ablation layer of a transfer substrate with active energy rays to cause ablation, thereby transferring an element held by the ablation layer from the transfer substrate to a transferee substrate; a transfer substrate gripping portion that grips the transfer substrate; a transfer substrate gripping unit configured to grip the transfer substrate so that the ablation layer of the transfer substrate faces the transfer substrate; an active energy ray irradiation unit that irradiates the ablation layer of the transfer substrate held by the transfer substrate gripping unit with active energy rays; Equipped with the active energy ray irradiation unit irradiates active energy rays at a plurality of locations in a holding region of the ablation layer that holds one element, the ablation layer is composed of a plurality of independent holding portions, and the active energy rays are irradiated individually to the plurality of holding portions each holding one element; A transfer device characterized in that the active energy ray irradiation unit irradiates active energy rays to the multiple holding portions that hold one element, in sequence from the holding portion located on the outer side to the holding portion located on the inner side.

2. A transfer device that irradiates an ablation layer of a transfer substrate with active energy rays to cause ablation, thereby transferring an element held by the ablation layer from the transfer substrate to a transferee substrate, a transfer substrate gripping portion that grips the transfer substrate; a transfer substrate gripping unit configured to grip the transfer substrate so that the ablation layer of the transfer substrate faces the transfer substrate; an active energy ray irradiation unit that irradiates the ablation layer of the transfer substrate held by the transfer substrate gripping unit with active energy rays; Equipped with the active energy ray irradiation unit irradiates active energy rays at a plurality of locations in a holding region of the ablation layer that holds one element, the ablation layer is composed of a plurality of independent holding portions, and the active energy rays are irradiated individually to the plurality of holding portions each holding one element; The transfer device is characterized in that the active energy ray irradiation unit irradiates the multiple holding portions that hold one element with active energy rays so that the irradiation trajectory of the active energy rays is spiral.

3. 3. The transfer device according to claim 1, wherein an irradiation range of the active energy rays is smaller than the holding area.

4. 3. The transfer device according to claim 1, wherein the ablation layer disappears due to ablation.

5. 3. The transfer device according to claim 1, wherein the ablation layer generates blisters by ablation.

6. 6. The transfer device according to claim 5, wherein the active energy ray irradiation unit controls a location to be irradiated with the active energy ray so that the blister is formed for each irradiation of the active energy ray.

7. a transfer device that irradiates an ablation layer of a transfer substrate with active energy rays to cause ablation, thereby transferring an element held by the ablation layer from the transfer substrate to a transferee substrate; a transfer substrate gripping portion that grips the transfer substrate; a transfer substrate gripping unit configured to grip the transfer substrate so that the ablation layer of the transfer substrate faces the transfer substrate; an active energy ray irradiation unit that irradiates the ablation layer of the transfer substrate held by the transfer substrate gripping unit with active energy rays; Equipped with the active energy ray irradiation unit irradiates active energy rays at a plurality of locations in a holding region of the ablation layer that holds one element, the ablation layer generates blisters by ablation, and the holding region of the ablation layer includes a mixture of holding portions that have a holding force for an element and that cause blisters when irradiated with active energy rays, and non-holding portions that do not have a holding force for an element and that do not cause blisters when irradiated with active energy rays; A transfer device characterized in that the active energy ray irradiation unit irradiates active energy rays to the multiple holding portions that hold one element, in sequence from the holding portion located on the outer side to the holding portion located on the inner side.

8. A transfer device that irradiates an ablation layer of a transfer substrate with active energy rays to cause ablation, thereby transferring an element held by the ablation layer from the transfer substrate to a transferee substrate, a transfer substrate gripping portion that grips the transfer substrate; a transfer substrate gripping unit configured to grip the transfer substrate so that the ablation layer of the transfer substrate faces the transfer substrate; an active energy ray irradiation unit that irradiates the ablation layer of the transfer substrate held by the transfer substrate gripping unit with active energy rays; Equipped with the active energy ray irradiation unit irradiates active energy rays at a plurality of locations in a holding region of the ablation layer that holds one element, the ablation layer generates blisters by ablation, and the holding region of the ablation layer includes a mixture of holding portions that have a holding force for an element and that cause blisters when irradiated with active energy rays, and non-holding portions that do not have a holding force for an element and that do not cause blisters when irradiated with active energy rays; The transfer device is characterized in that the active energy ray irradiation unit irradiates the multiple holding portions that hold one element with active energy rays so that the irradiation trajectory of the active energy rays is spiral.

9. 9. The transfer device according to claim 1, wherein the active energy ray irradiating section irradiates all of the holding portions that hold one element with active energy rays of uniform power.

10. a transfer device that irradiates an ablation layer of a transfer substrate with active energy rays to cause ablation, thereby transferring an element held by the ablation layer from the transfer substrate to a transferee substrate; a transfer substrate gripping portion that grips the transfer substrate; a transfer substrate gripping unit configured to grip the transfer substrate so that the ablation layer of the transfer substrate faces the transfer substrate; an active energy ray irradiation unit that irradiates the ablation layer of the transfer substrate held by the transfer substrate gripping unit with active energy rays; Equipped with A transfer device characterized in that the active energy ray irradiation unit irradiates active energy rays at multiple locations in a holding area that holds one element in the ablation layer, in sequence from a position near the outside of the holding area to a position near the inside of the holding area.

11. A transfer device that irradiates an ablation layer of a transfer substrate with active energy rays to cause ablation, thereby transferring an element held by the ablation layer from the transfer substrate to a transferee substrate, a transfer substrate gripping portion that grips the transfer substrate; a transfer substrate gripping unit configured to grip the transfer substrate so that the ablation layer of the transfer substrate faces the transfer substrate; an active energy ray irradiation unit that irradiates the ablation layer of the transfer substrate held by the transfer substrate gripping unit with active energy rays; Equipped with The transfer device is characterized in that the active energy ray irradiation unit irradiates active energy rays at multiple locations in a holding area that holds one element in the ablation layer so that the irradiation trajectory of the active energy rays is spiral.

12. A transfer device that transfers a transfer target held on a transfer substrate to a transferee substrate by irradiating the transfer substrate with light energy and utilizing laser lift-off, a laser light source that emits laser light that forms the optical energy; a light energy shifting means for adjusting the irradiation position of the light energy on the transfer substrate; Equipped with The transfer object is held on the transfer substrate via a plurality of adhesive points provided on the surface of the transfer substrate facing the transfer object, and the laser light source irradiates the light energy individually to the plurality of adhesive points holding one of the transfer objects in sequence from the outermost adhesive point to the innermost adhesive point, thereby transferring the transfer object to the transferee substrate arranged opposite the transfer substrate across the transfer object.

13. A transfer device that transfers a transfer target held on a transfer substrate to a transferee substrate by irradiating the transfer substrate with light energy and utilizing laser lift-off, a laser light source that emits laser light that forms the optical energy; a light energy shifting means for adjusting the irradiation position of the light energy on the transfer substrate; Equipped with The transfer object is held on the transfer substrate via a plurality of adhesive points provided on the surface of the transfer substrate facing the transfer object, and the laser light source irradiates the light energy individually to the plurality of adhesive points holding one of the transfer objects so that the trajectory of the light energy irradiation is spiral, thereby transferring the transfer object to the transferee substrate arranged opposite the transfer substrate across the transfer object.

Images