TEMPERATURE-CONTROLLED SHIELD FOR EVAPORATION SOURCE, MATERIAL DEPOSITION APPARATUS, AND METHOD FOR DEPOSITING MATERIAL ON A SUBSTRATE - Patent application

Abstract

A temperature-controlled shield for an evaporation source is described, the temperature-controlled shield being configured to provide a preheat zone or a post-cool zone.

Description

[Technical Field]

[0001]

[0001] Embodiments of the present disclosure relate to substrate coating by thermal evaporation in a reduced pressure chamber. Embodiments of the present disclosure further relate to material deposition of an evaporated material onto a substrate. Some embodiments also relate to temperature-controlled deposition of a material onto a substrate. [Background technology]

[0002]

[0002] Various techniques for deposition onto a substrate are known, such as chemical vapor deposition (CVD) and physical vapor deposition (PVD). For deposition at high deposition rates, thermal evaporation may be used as a PVD process. In thermal evaporation, a source material is heated to produce a vapor that may be deposited, for example, on the substrate. Increasing the temperature of the heated source material increases the vapor concentration and can promote high deposition rates. The temperature for achieving high deposition rates depends on the physical properties of the source material, such as the vapor pressure as a function of temperature, and the physical limitations of the substrate, such as the melting point.

[0003] For example, the material to be deposited on the substrate can be heated in a crucible to generate a vapor at a high vapor pressure. The vapor can be transferred from the crucible to a heated vapor distributor equipped with multiple nozzles. The vapor can be directed by one or more nozzles onto the substrate in a coating space, for example, in a vacuum chamber.

[0004]

[0004] Deposition of metals, such as lithium, by evaporation onto flexible substrates, for example copper substrates, may be used for the manufacture of batteries, such as Li-batteries. For example, a lithium layer may be deposited on a thin flexible substrate to produce the anode of the battery. After assembling the anode layer stack and the cathode layer stack, optionally including an electrolyte and / or a separator therebetween, the produced layer configuration may be rolled or otherwise laminated to produce the Li-battery.

[0005]

[0005] The surfaces of components, such as the vacuum chamber walls of a vacuum chamber, may be exposed to steam and may be coated. Frequent maintenance to remove condensate is not practical for high-volume production, such as web coating on thin foils. Furthermore, if the vacuum chamber components are different from the substrate being coated, expensive coating materials may be wasted.

[0006]

[0006] Furthermore, the material being deposited is heated to high temperatures, thereby placing a high thermal load on the substrate being coated. However, high temperatures can have adverse effects on the substrate. Therefore, it would be beneficial to provide an improved material deposition apparatus to at least partially overcome the problems in the art. Summary of the Invention

[0007] According to one embodiment, a temperature controlled shield for an evaporation source is provided, the temperature controlled shield being configured to provide a pre-heat zone or a post-cool zone.

[0008] According to one embodiment, a material deposition apparatus for depositing an evaporative material onto a substrate is provided, the material deposition apparatus including one or more temperature-controlled shields according to an embodiment of the present disclosure.

[0009] According to one embodiment, a material deposition apparatus for depositing an evaporation material on a substrate is provided. The material deposition apparatus includes an evaporation source for providing an evaporation material to the substrate. The evaporation source has a surface having a first end and a second end opposite the first end, and a length between the first end and the second end. The material deposition apparatus further includes one or more temperature-controlled shields disposed on at least one of the first end or the second end of the evaporation source. The one or more temperature-controlled shields extend outward from the evaporation source. The one or more temperature-controlled shields provide a width that is at least 20% of the length of the surface between the first end and the second end of the evaporation source.

[0010] According to one embodiment, a material deposition apparatus for depositing an evaporation material on a substrate is provided. The material deposition apparatus includes an evaporation source for supplying evaporation material to the substrate. The evaporation source has a first end and a second end opposite the first end. The material deposition apparatus further includes one or more temperature-controlled shields disposed on at least one of the first end or the second end of the evaporation source. The one or more temperature-controlled shields extend outward from the evaporation source at a wide angle.

[0011] According to one embodiment, there is provided a material deposition apparatus for depositing an evaporation material on a substrate, the material deposition apparatus including a substrate transport device for transporting the substrate along a substrate transport direction, and at least two evaporation sources along the substrate transport direction for providing evaporation material to the substrate, each of the at least two evaporation sources including one or more asymmetric temperature-controlled shields.

[0012] According to one embodiment, there is provided an evaporation source for providing evaporation material to a substrate in a reduced pressure chamber, the evaporation source including a nozzle assembly shield having a plurality of nozzles arranged in at least one row, the row including two outermost nozzles, the two outermost nozzles being angled in different directions.

[0013] According to one embodiment, an evaporation source for providing evaporation material to a substrate within a reduced pressure chamber is provided. The evaporation source includes a nozzle assembly shield having a first end and a second end and a surface facing the substrate between the first end and the second end. The nozzle assembly shield has a plurality of openings arranged in at least one row in the surface between the first end and the second end. The at least one row has a first outermost opening adjacent to the first end and a second outermost opening adjacent to the second end. The evaporation source further includes a plurality of nozzles extending through the plurality of openings. The plurality of nozzles includes a first outermost nozzle extending through the first outermost opening and a second outermost nozzle extending through the second outermost opening. The first and second outermost nozzles are inclined at an angle relative to the surface between the first end and the second end.

[0014] According to one embodiment, there is provided a method for depositing material onto a substrate in a reduced pressure chamber, the method including evaporating material in an evaporation source having a vapor emission area and directing the evaporated material toward the substrate area by a temperature-controlled shield, the substrate area being larger than the vapor emission area.

[0015] According to one embodiment, there is provided a method for manufacturing a battery anode, the method comprising depositing a material onto a substrate in a reduced pressure chamber according to any of the embodiments described herein.

[0016] According to one embodiment, there is provided a method of manufacturing a battery anode, the method including directing a web including or consisting of an anode layer through a material deposition apparatus according to an embodiment of the present disclosure, and depositing a lithium-containing material or lithium on the web using a vapor deposition apparatus.

[0017]

[0017] Embodiments are also directed to apparatus for practicing the disclosed methods, including apparatus portions for performing each described method aspect. These method aspects may be implemented using hardware components, using a computer programmed by appropriate software, by any combination of the two, or in any other manner. Furthermore, embodiments according to the present disclosure are also directed to methods for operating the described apparatus, including method aspects for performing any function of the apparatus.

[0018]

[0018] In order that the above-mentioned features of the present disclosure may be understood in detail, a more particular description of the present disclosure briefly summarized above can be had by reference to the embodiments. The accompanying drawings relate to embodiments of the present disclosure and are described in the following description. [Brief explanation of the drawings]

[0019] [Figure 1] 1 shows a schematic diagram of a material deposition apparatus according to embodiments described herein. [Figure 2A] 1 shows a schematic diagram of a material deposition apparatus according to embodiments described herein. [Figure 2B] 1 illustrates a temperature profile in a substrate according to embodiments described herein. [Figure 3] 1 shows a schematic diagram of a material deposition apparatus according to embodiments described herein. [Figure 4A] 1 shows a schematic diagram of a material deposition apparatus according to embodiments described herein. [Figure 4B] 1 illustrates a heat load profile on a substrate according to embodiments described herein. [Figure 5] 1 shows a flow diagram of a method according to an embodiment described herein. DETAILED DESCRIPTION OF THE INVENTION

[0020] Reference will now be made in detail to various embodiments of the present disclosure. One or more examples of these embodiments are illustrated in the drawings. In the following description of the drawings, like reference numerals refer to like components. Generally, only differences relative to individual embodiments will be described. While each example is provided as an illustration of the disclosure, it is not intended to limit the disclosure. Furthermore, features illustrated and described as part of one embodiment may be used on or in conjunction with other embodiments to yield yet further embodiments. It is intended that this description include such modifications and variations.

[0021]

[0020] Several embodiments provided herein relate to thin film coating by evaporation, particularly thin film coating in a reduced pressure chamber. Typically, the material to be coated is heated to a temperature specific to the material to be evaporated. In general, a faster evaporation rate can be provided at a higher temperature. The respective temperature for a specific coating rate depends, among other things, on, for example, the material vapor pressure. In processes with high deposition rates, the condensation heat load of the material may dominate the heat load on the substrate.

[0022]

[0021] In an evaporation system, the evaporation material will condense on the surface of a system component that has a lower temperature than the evaporation material. In thermal coating of a substrate, the substrate has a lower temperature. The evaporation material may thereby be coated onto the substrate to form a thin layer on the substrate. However, coating or material deposition based on a temperature difference between the deposited material and the substrate also provides condensation energy to the substrate. Therefore, the condensation energy provided by the deposited material heats the substrate, especially at the location where the evaporation material directly hits the substrate.

[0023]

[0022] It would therefore be beneficial to provide systems, apparatus, and methods that avoid the concentration of condensation energy on the substrate being coated, and that provide better distribution of heat, i.e., condensation energy, onto the substrate being coated.

[0024] 1 illustrates an exemplary material deposition apparatus according to embodiments described herein, which may be combined with any other embodiments described herein. The material deposition apparatus 100 may include a vacuum chamber 105. A reduced pressure may be provided within the vacuum chamber. For example, the material deposition apparatus may include a vacuum pump for providing a reduced pressure within the vacuum chamber.

[0025]

[0024] As used herein, the term "vacuum" may be understood to mean, for example, an industrial vacuum having a vacuum pressure of less than 10 mbar. Typically, the pressure of the vacuum chambers described herein is about 10 -4 mbar and approximately 10 -8 Between 10 mbar and 20 mbar, more typically about 10 -4 mbar and approximately 10 -7 between about 10 mbar and about 10 mbar, and even more typically -5 mbar and approximately 10 -6 In some embodiments, the total pressure in the one or more reduced pressure chambers may be between about 10 mbar. -4 mbar to about 10 -7 The reduced pressure chamber may therefore be a "reduced pressure deposition chamber", i.e. a reduced pressure chamber configured for reduced pressure deposition.

[0026] According to multiple embodiments, which may be combined with any other embodiments described herein, the material deposition apparatus may include an evaporation source 110. The evaporation source is configured to provide evaporation material toward the substrate 122. The evaporation source 110 may be disposed within the reduced pressure chamber 105 or may be at least partially disposed within the reduced pressure chamber 105.

[0027] According to several embodiments, which may be combined with any other embodiments described herein, the material deposition apparatus may include a substrate transport device 120. The substrate transport device may be configured to transport a substrate 122. The substrate 122 may be arranged around the substrate transport device 120. The substrate transport device 120 may be a coating drum as exemplarily shown in FIG. 1 . The coating drum may include a curved drum surface, and the vapor deposition apparatus may be configured to move the substrate 122 on the curved drum surface in a circumferential direction or substrate transport direction D past the evaporation source 110. For example, the substrate may be a flexible web or foil, and the material deposition apparatus may be a roll-to-roll deposition apparatus. The coating drum may be a cylinder extending in a length direction perpendicular to the plane of FIG. 1 . The substrate transport device may be movable, i.e., the coating drum may be rotated about an axis A. The substrate transport device may be moved or rotated clockwise or counterclockwise. The substrate transport device may change direction during deposition, for example, when rotating the substrate transport device clockwise during deposition, the rotation direction may be changed to counterclockwise, or vice versa. The substrate may be moved in a circumferential or substrate transport direction, as indicated by arrow D in FIG.

[0028]

[0027] According to some embodiments, which may be combined with other embodiments described herein, the coating drum may be a gas cushion coating drum. A gas cushion coating drum provides cooling gas between the surface of the drum and the substrate. For example, the drum and the cooling gas may be cooled to a temperature below room temperature. Heat may be removed from the substrate to enable faster deposition rates without damaging the thin foil or web on which the material is deposited.

[0029] In the gas cushion roller, a first subgroup of gas outlets, i.e., open gas outlets, can be provided in the web guiding area of ​​the processing drum. A second subgroup of gas outlets, i.e., closed gas outlets, can be provided outside the web guiding area. Since gas is only released in the web guiding area where it is needed to form the hover cushion, no or very little gas is directly released into areas where the webs do not overlap, which can reduce gas waste and / or allow better vacuum to be maintained with less strain on the pump system.

[0030] According to some embodiments, which may be combined with other embodiments described herein, in addition to or instead of the subgroups of gas outlets, the outer surface of the processing drum may be coated with a porous surface. The porous surface may allow a small amount of cooling gas to flow from the inside of the processing drum to the surface of the processing drum. The cooling gas may form a gas cushion between the processing drum and a web or foil that is guided over the processing drum to deposit material thereon.

[0031] According to several embodiments, which may be combined with any other embodiments described herein, the substrate may be a thin substrate, such as a foil or a web. The substrate to be coated may have a thickness of 50 μm or less, particularly 20 μm or less, or even 10 μm or less. For example, in a vapor deposition apparatus, a metal foil or a flexible metal-coated foil may be coated. In some implementations, the substrate 10 is a thin copper foil or a thin aluminum foil having a thickness of less than 30 μm, for example, 10 μm or less.

[0032] According to several embodiments, which may be combined with any other embodiments described herein, the material deposition apparatus may include a substrate providing or unwinding roll (not shown in FIG. 1 ) for providing an untreated substrate. The substrate providing or unwinding roll may be moved, i.e., rotated, so that the substrate may be unwound from the substrate providing or unwinding roll. Additionally, the material deposition apparatus may include a substrate receiving roll for taking up the treated substrate after deposition of the material onto the substrate has occurred. The substrate receiving roll may be moved, i.e., the substrate receiving roll may be rotated to take up the treated substrate. The substrate receiving roll and the substrate supply or unwinding roll may be rotated in the same direction, i.e., both rolls may be rotated clockwise, or the substrate supply or unwinding roll may be rotated in opposite directions, i.e., one roll may be rotated clockwise and the other roll may be rotated counterclockwise, or vice versa.

[0033]

[0032] However, it should be understood that the substrate transport device may also be a roll-to-roll transport device, although this is not shown in FIG. 1 . The roll-to-roll transport device may include an unwind roll or a substrate supply roll to which an untreated substrate may be provided. The roll-to-roll transport device may further include a receiving roll for winding up the treated substrate. The unwind roll or the substrate supply roll and the receiving roll may each be provided in a different vacuum chamber from the evaporation source, or may be provided in the same vacuum chamber as the evaporation source. Between the unwind roll and the receiving roll, the substrate may be provided near the evaporation source for depositing material onto the substrate. For example, the substrate may be "spread" between the unwind roll and the receiving roll and guided over the evaporation source to receive the evaporated material. For example, the substrate may be subjected to a defined and / or controlled force. A substrate tensioner may be provided.

[0034] According to various embodiments, which may be combined with any other embodiments described herein, the evaporation source 110 may have a first end and a second end opposite the first end. The first end and the second end may define a space therebetween. The term "second end opposite the first end" used throughout this disclosure may be understood as two sides of the evaporation source being arranged side by side. For example, the evaporation source may include a first wall and a second wall extending in the same direction and arranged side by side. The first end and the second end may be understood as sidewall limits of the evaporation source. In particular, the first end and the second end may define a surface 119 therebetween, i.e., a surface that may be substantially perpendicular to the first and second walls of the evaporation source. The surface of the evaporation source may be aligned with a substrate transport device, i.e., the surface 119 of the evaporation source may be oriented to facilitate the provision of the material to be deposited.

[0035] According to several embodiments, which may be combined with any other embodiments described herein, an evaporation source may provide the material to be deposited on the substrate. The evaporation source may include a crucible that may evaporate the material to be deposited by applying a temperature suitable for evaporating the material to the material. For example, the material to be deposited may include, for example, a metal, particularly lithium, a metal alloy, and other vaporizable materials that have a gas phase under given conditions. According to further embodiments, the material may additionally or alternatively include magnesium (Mg), ytterbium (Yb), and lithium fluoride (LiF).

[0036]

[0035] Furthermore, the evaporation source may include a distributor. The distributor may distribute the evaporated material. The material may be provided in the distributor, for example, by connecting a crucible to the distributor through an inlet opening. The distributor may have one or more openings. The evaporated material to be deposited can exit the distributor through the openings. The source material can be deposited on the substrate 122 by multiple nozzles extending through the openings. In other words, the evaporation source may include one or more nozzles for providing the evaporated material to the substrate. The material to be deposited may be sprayed onto the substrate by the multiple nozzles, for example.

[0037] According to several embodiments, which may be combined with any other embodiments described herein, a temperature-controlled shield 112 is provided. The temperature-controlled shield is configured to provide a heating zone or a cooling zone, particularly a pre-heating zone and a post-cooling zone. In particular, the temperature-controlled shield may be configured to provide a pre-heating zone or a post-cooling zone in the substrate transport device 120, i.e., toward or at the substrate 122 transported by the substrate transport device. The temperature-controlled shield 112 may include one of a heating device and a cooling device. The temperature-controlled shield may be provided in the evaporation source 110. In particular, one or more temperature-controlled shields may be provided in the evaporation source. The temperature-controlled shield 112 is heatable. This may reduce or prevent vapor condensation on the temperature-controlled shield 112 when the temperature-controlled shield 112 is heated to an operating temperature, for example, an operating temperature of 500°C or higher in some embodiments.

[0038] According to an embodiment of the present disclosure, the temperature-controlled shield has a width along the transport direction that is at least 10% larger, particularly at least 20% larger, than the corresponding width of the evaporation source. Therefore, material deposition is not limited to the area of ​​the evaporation source in the transport direction. Limiting the plume of material to the area of ​​the evaporation source can result in a rapid increase in the temperature of the substrate. This can lead to wrinkling and warping of the substrate, e.g., a thin foil or web. Therefore, the plume of material from the evaporation source is allowed to expand toward the sides of the evaporation zone, since it has a preheating zone and / or a post-cooling zone. Since the temperature increase is directly correlated to the amount of deposited material, the expanded shape of the heated shield results in a low deposition rate at the inlet. The deposition rate continuously increases, for example, up to a maximum deposition rate in the main body of the evaporation source. As described herein, the heat load is mainly provided by condensation energy. Therefore, the temperature profile of the web or foil is proportional to the deposition rate. Therefore, the temperature profile increases similarly to the deposition rate profile described above.

[0039] According to several embodiments, which may be combined with any other embodiments described herein, the temperature-controlled shield may include a thermally conductive material. The temperature-controlled shield may include a material suitable for contact heating or cooling. For example, the temperature-controlled shield may be made of a metallic material, such as stainless steel, Mo, Ta, W, Invar, or other high-temperature materials or high-temperature metals. For example, AlN may also serve as a good thermally conductive ceramic.

[0040] According to various embodiments, which may be combined with any other embodiments described herein, one or more temperature-controlled shields may be provided at a first end and a second end of the evaporation source. In particular, a first temperature-controlled shield may be provided at the first end of the evaporation source, and a second temperature-controlled shield may be provided at the second end of the evaporation source. Additionally or alternatively, a first portion of the temperature-controlled shield may be provided at the first end of the evaporation source, and a second portion of the temperature-controlled shield may be provided at the second end of the evaporation source.

[0041]

[0040] In other words, the temperature-controlled shield 112 does not contact the substrate transport device 120. Thereby, the substrate supported by the substrate transport device 120 can move past the evaporation source 110 and past the temperature-controlled shield 112 during material deposition. The temperature-controlled shield 112 only needs to leave a small gap, for example, a gap of 5 mm or less, 3 mm or less, 2 mm or less, or even about 1 mm, between the temperature-controlled shield 112 and the substrate transport device 120. Thereby, any vapor can hardly propagate, for example, laterally, through the temperature-controlled shield.

[0042] According to embodiments, which may be combined with any other embodiments described herein, the temperature-controlled shield may extend along a circumferential direction or substrate transport direction D. The temperature-controlled shield may include a width dimension along the axis of the substrate transport device 120 and a length dimension in a direction different from the axis of the substrate transport device 120, i.e., in the circumferential direction or substrate transport direction D.

[0043] According to several embodiments, which may be combined with any other embodiments described herein, the temperature-controlled shield may extend radially or laterally away from the evaporation source. Hereinafter, such a temperature-controlled shield may also be referred to as an "elongated shield." For example, the temperature-controlled shield may include a straight portion 113 extending radially away or outward from the evaporation source. The temperature-controlled shield or straight portion may be directed from the evaporation source toward the substrate 122. The temperature-controlled shield or straight portion 113 may delimit the deposition area toward the substrate. The temperature-controlled shield or straight portion may be angled relative to the evaporation source. For example, the temperature-controlled shield may be positioned at a wide angle α relative to the evaporation source 110, i.e., relative to the surface 119 of the evaporation source between the first and second ends of the evaporation source. The wide angle may be between 95° and 180°, particularly between 110° and 140°, and more particularly between 110° and 130°.

[0044] According to several embodiments, which may be combined with any other embodiments described herein, the temperature-controlled shield 112 may be curved or may include a curved portion or a curved end 111. The curved portion may be curved relative to the straight portion 113. The curved end 111 may further delimit the deposition area between the evaporation source and the substrate. The curved portion or the curved end may be inclined toward the substrate. That is, the curved end may be closer to the substrate compared to the straight portion. In other words, the straight portion may have a longer distance to the substrate than the curved end.

[0045] According to several embodiments, which may be combined with other embodiments described herein, the material deposition apparatus may include a deposition area between the evaporation source 110 and the substrate transport device 120. The deposition area may be understood as the area where the material to be deposited is provided to the substrate. The deposition area may be filled with the material to be deposited from the evaporation source and may be laterally limited by one or more temperature-controlled shields, for example, to provide a uniform material deposition.

[0046] According to several embodiments, which may be combined with any other embodiments described herein, one or more temperature-controlled shields may be elongated compared to conventional shields in the art. In particular, the straight portion 113 may be elongated. An elongated temperature-controlled shield may be understood as a shield that covers or surrounds a large surface area of ​​the substrate, thereby providing a larger deposition area compared to short shields or sidewalls in the art. For example, short shields in the art extend at a 90° angle from the deposition source toward the substrate. Thus, one or more temperature-controlled shields may be disposed at at least one of the first end or the second end of the evaporation source and may extend outward toward the substrate transport device, and may be configured to enlarge the deposition area, particularly compared to a straight shield extending at a 90° angle toward the substrate.

[0047]

[0046] According to several embodiments that may be combined with any other embodiment described in this specification, one or more temperature shields may each have a length that is at least 20% of the length of the surface 119 between the first end and the second end of the evaporation source 110.

[0048] According to several embodiments, which may be combined with any other embodiments described herein, one or more temperature-controlled shields may be heated. The temperature of the shields may be controlled to prevent or avoid condensation of the material to be deposited. If the material to be deposited condenses on the shields, heating the one or more temperature-controlled shields may result in re-evaporation of the condensed material. Advantageously, high deposition yields may be achieved.

[0049]

[0048] Further advantageously, the condensation energy provided to the substrate by the high-temperature evaporation material may be distributed over a wide area of ​​the substrate. A temperature-controlled shield may provide a deposition area below the substrate where the material to be deposited cannot be actively provided, i.e., where no evaporation source nozzle is located, but where the material to be deposited can be provided via the temperature-controlled shield described herein. Thus, when the substrate to be coated is transported along one or more temperature-controlled shields, the material to be deposited may be provided at a lower rate in the nozzle-free areas compared to the rate at which the material is provided at a location with a nozzle, i.e., compared to the rate at which the material is directly provided by multiple nozzles. Thus, the overall temperature provided to the substrate by the material is more uniformly distributed over a wider area of ​​the substrate during coating. Therefore, temperature-dependent damage to the substrate can be avoided or prevented. In particular, wrinkling of the substrate can be avoided or prevented. Therefore, coating of the substrate is more efficient, resulting in a higher yield of treated substrates and better quality of the treated substrates.

[0050]

[0049] Even more advantageously, a lower coating speed may be provided where the substrate enters the area between the temperature-controlled shield and the substrate transport device. Then, the coating speed may be slowly increased as the substrate progresses toward the evaporation source (i.e., the area facing the evaporation source). The area facing the evaporation source may have multiple nozzles arranged therein, resulting in a more uniform coating of the substrate. If a second temperature-controlled shield is present, the coating speed may be reduced as the substrate progresses further toward the second temperature-controlled shield arranged at the second end of the evaporation source.

[0051] According to several embodiments that may be combined with any other embodiments described herein and that exemplarily refer to FIG. 2A , the material deposition apparatus 200 may include at least two evaporation sources. The at least two evaporation sources may be aligned with respect to the substrate transport direction, as indicated by arrow D in FIG. 2A . In other words, the at least two evaporation sources may be aligned with respect to the substrate transport direction, or may be aligned one behind the other. The at least two evaporation sources may be as described herein.

[0052] According to several embodiments, which may be combined with any other embodiments described herein, the at least two evaporation sources 110 may each include two asymmetric temperature-controlled shields, or may have one asymmetric temperature-controlled shield, the two portions of which are asymmetric with respect to each other. As used herein, the term "asymmetric" may be understood to mean that the two temperature-controlled shields or the two portions of one temperature-controlled shield may be different in shape and size. Furthermore, it may be understood that the two asymmetric shields or the two portions may have different lengths, and that the two asymmetric shields or the two portions may extend in different directions while both extending toward the substrate.

[0053] According to several embodiments, which may be combined with any other embodiments described herein, the asymmetric temperature-controlled shield may include a first asymmetric temperature-controlled shield 214 and a second asymmetric temperature-controlled shield 216 disposed on either side of each of the at least two evaporation sources. The first asymmetric temperature-controlled shield 214 may be a straight shield, i.e., the first asymmetric temperature-controlled shield may not include curved ends. The first asymmetric temperature-controlled shield 214 may extend outward from each of the evaporation sources, i.e., the first asymmetric temperature-controlled shield 214 may be disposed at a first end of one of the at least two evaporation sources and at a second end of another of the at least two evaporation sources, or vice versa, and one and another evaporation source may be disposed adjacent to each other.

[0054] According to several embodiments, which may be combined with any other embodiments described herein, the second asymmetric temperature-controlled shield 216 may include a straight portion and a bent end. The bent end may be bent away from the substrate or toward the other shield. A deposition area is provided between the second asymmetric temperature-controlled shields 216 of adjacent evaporation sources. The second asymmetric temperature-controlled shields 216 may extend inward from each of the evaporation sources, i.e., the second asymmetric temperature-controlled shield 216 may be disposed at the second end of one of the at least two evaporation sources and at the first end of another of the at least two evaporation sources, or vice versa, and may extend toward each other. In particular, the bent ends may be bent toward each other, i.e., each straight portion may be directed toward the substrate, and each bent end may optionally be directed away from the substrate. For example, the bent end may be bent at an angle relative to the straight portion of the second asymmetric temperature-controlled shield.

[0055] Advantageously, the open shield design between at least two evaporation sources as described above may enable vacuum pumping while still preventing stray coating of the deposited material. Even more advantageously, the asymmetric shield configuration, particularly the arrangement of two second asymmetric temperature-controlled shields as described above, prevents excessive cooling of the substrate between the two evaporation sources, where active particle deposition does not occur. Therefore, the temperature brought about in the material deposition apparatus by the evaporated material can be more uniformly distributed even between the two evaporation sources, thereby effectively preventing or avoiding wrinkling of the substrate, which may be, for example, a foil. In other words, the interface between the two evaporation sources, where the substrate would normally be cooled due to the absence or low presence of material particles, may be bridged, allowing for uniform coating without damage to the substrate caused by rapid temperature changes between the two evaporation sources.

[0056]

[0055] It should also be understood that three or more evaporation sources may be arranged along the transport direction of the substrate, and between each of the evaporation sources an open shield design, i.e., an asymmetric shield design having two curved shields facing each other, may be provided.

[0057] The beneficial effect of the open shield design combined with the open shield design between the evaporation sources can be seen exemplarily in the diagram of FIG. 2B. FIG. 2B shows two temperature profiles, with the x-axis representing time in seconds and the y-axis representing temperature at the substrate in °C. The dotted line 234 shows the temperature profile of a material deposition apparatus including four evaporation sources aligned in the substrate transport direction without an open shield design between the evaporation sources. The solid line 232 shows the temperature profile of four evaporation sources aligned in the substrate transport direction with an open shield design according to the embodiments described herein between the evaporation sources, i.e., with asymmetric temperature-controlled shields. Both curves show temperature profiles for the same deposition thickness, i.e., overall deposition rate. Each plateau can be considered when the substrate is positioned directly above one of the evaporation sources. In other words, the x-axis representing time indicates the time of the substrate section moving over the four evaporation sources. Thus, before reaching the first plateau, the substrate may be considered to be spatially in front of the first evaporation source, i.e., to the left of the left evaporation source shown in FIG. 2A. Due to the first temperature-controlled shield, when the substrate reaches the evaporation source, the slope of the solid curve 232 is flatter than the slope of the dotted curve 234 (without the temperature-controlled shield on the left side of FIG. 2A), where an extremely steep slope is detected. Thus, especially due to the small mass of the substrate, the temperature of the substrate rises in a drastic manner when the temperature-controlled shield is not present at the evaporation source and remains at a very high level before the temperature drops very quickly after the substrate passes the first evaporation source.

[0058] In contrast, in the evaporation source with an open shield design, the temperature of the substrate rises slowly and remains at a moderate level. Due to the curved shield between the evaporation sources, even if the substrate is not placed directly above the evaporation source, no sudden drop in temperature is detected, but the temperature remains approximately constant. After material deposition occurs, the temperature drop is smoother and flatter compared to the evaporation source without an open shield design.

[0059]

[0058] Therefore, the temperature of the substrate can be maintained at a more constant and moderate level. Therefore, heat-related damage to the substrate can be avoided or prevented. Furthermore, the temperature change over time can be reduced, thereby reducing or preventing wrinkling or warping of the substrate.

[0060] According to several embodiments that may be combined with any other embodiments described herein and exemplarily refer to FIG. 3 , a material deposition apparatus 300 is provided herein having an open shield design and a temperature-controlled shield having a heating or cooling zone. In other words, the material deposition apparatus shown in FIG. 3 may be considered a combination of the embodiments described with reference to FIGS. 1 and 2A . Accordingly, the material deposition apparatus includes at least two evaporation sources 310 along a substrate transport direction D below a substrate transport device 120 that transports a substrate 122. The at least two evaporation sources 310 may include a first asymmetric shield (or shield portion) and a second asymmetric shield (or shield portion) disposed on either side of each of the at least two evaporation sources. The first asymmetric shield is a temperature-controlled shield according to several embodiments described herein. That is, the first asymmetric temperature-controlled shield may be a temperature-controlled shield 112, for example, an elongated shield having a straight portion 113 and a bent end 111 as described with reference to FIG. 1 , for example, to provide an elongated coating area. 2A, i.e., the second asymmetric temperature-controlled shield may include a straight portion 216 and a curved portion 217. The curved portion 217 is curved, for example, away from the substrate and toward the second asymmetric temperature-controlled shield of another of the at least two evaporation sources.

[0061] Continuing the beneficial effects described herein of the embodiments described with reference to FIGS. 1 and 2A, and returning to the temperature profile shown in FIG. 2B, a shield design such as that shown in FIG. 3 may result in a flat increase in temperature to the left of the solid line 232 (representing the left side of the leftmost evaporation source) and a flat decrease in temperature to the right. Therefore, the coating rate at the outermost positions on the left and right of the evaporation source is low. This allows the overall heat load, particularly the increase or decrease in the heat load, to be maintained at a moderate level for a complete deposition cycle. In that case, the substrate may pass through all of the evaporation sources aligned in the substrate transport direction.

[0062] According to several embodiments, which may be combined with any other embodiments described herein, an evaporation source for providing evaporation material to a substrate in a reduced pressure chamber is provided. The evaporation source includes a nozzle assembly shield having a plurality of nozzles arranged in rows. Each of the rows includes two outermost nozzles. The two outermost nozzles are tilted in different directions. One of the rows is shown for the evaporation source 410 shown in FIG. 4A. The rows are arranged along the axis A of the transport device 120. One or more of the rows, particularly more than 50% of the rows, or more or all of the rows, may have tilted nozzles as shown and described with respect to FIG. 4A.

[0063] According to embodiments that may be combined with any other embodiments described herein, the evaporation source may have a first end and a second end and a surface between the first end and the second end. The nozzle assembly shield may include a plurality of openings arranged in at least one row (e.g., multiple rows) in the surface between the first end and the second end. The at least one row may have a first outermost opening disposed adjacent the first end and a second outermost opening disposed adjacent the second end.

[0064] According to embodiments, which may be combined with any other embodiments described herein, the nozzle assembly shield may include a plurality of rows having a plurality of openings, the rows being arranged parallel to one another on the surface, i.e., along the axis of the coating drum.

[0065] According to some embodiments, which may be combined with any other embodiments described herein, the nozzles may extend through the openings. A row of the nozzles may include a first outermost nozzle extending through the first outermost opening and a second outermost nozzle extending through the second outermost opening. The first and second outermost nozzles may be inclined at an angle relative to a surface between the first end and the second end. For example, the first and second outermost nozzles may be inclined at an angle corresponding to angle α, as shown in FIG. 1 . Additionally or alternatively, the first and second outermost nozzles may be inclined at an angle between 5° and 25°, particularly between 5° and 15°, and more particularly between 5° and 10°.

[0066] According to several embodiments, which may be combined with any other embodiment described herein and which illustratively refer to FIG. 4A , a material deposition apparatus 400 for depositing an evaporation material on a substrate is provided. The material deposition apparatus may include an evaporation source according to an embodiment described herein, i.e., an evaporation source including a nozzle assembly shield as described above. The material deposition apparatus may further include one or more temperature-controlled shields according to any of the several embodiments described herein. Thus, the material deposition apparatus 400 may include, for example, any combination of an elongated shield having a straight portion 113 and a curved end 111, i.e., a shield 112, as described with reference to FIG. 1 , and first and second asymmetric shields, as described with reference to FIG. 2A .

[0067] According to various embodiments, the material deposition apparatus may include at least two evaporation sources distributed along the substrate transport direction D. Each of the at least two evaporation sources may include a distributor and a crucible as described herein. Furthermore, the at least two evaporation sources may include a plurality of openings arranged in at least one row (e.g., multiple rows extending along the axis of the coating drum). The at least one row may extend from a first end of each of the at least two evaporation sources to a respective second end. The plurality of openings may include a plurality of nozzles 318 for providing evaporation material to the substrate. The plurality of openings may include a first outermost opening adjacent to the first end of each of the at least two evaporation sources and a second outermost opening adjacent to the second end of each of the at least two evaporation sources. First and second outermost nozzles may be provided through the first and second outermost openings.

[0068] According to various embodiments, which may be combined with any other embodiments described herein, the first and second outermost nozzles 315 may be tilted in different directions. For example, each of the first and second outermost nozzles 315 may be tilted in a similar direction to the temperature-controlled shield disposed immediately adjacent to the tilted nozzle. In other words, when the tilted nozzle is disposed adjacent to the first end, the nozzle may be tilted in a similar direction to the temperature-controlled shield disposed at the first end of the evaporation source, and when the tilted nozzle is disposed adjacent to the second end, the tilted nozzle may be tilted in a similar direction to the temperature-controlled shield disposed at the second end. More particularly, the tilt angle of each tilted nozzle may be similar to the angle of each straight portion 113, 216 of each temperature-controlled shield.

[0069] The beneficial effect of a tilted nozzle design combined with an open shield design including an elongated temperature-controlled shield as shown in Figure 4A can be seen illustratively in the diagram of Figure 4B, which shows two heat loads of evaporation sources with two respective temperature-controlled shield designs (with and without a tilted nozzle). The dotted line 438 shows the heat load of the evaporation source without the tilted nozzle, and the solid line 436 shows the heat load of the evaporation source with the tilted nozzle.

[0070] In the diagram shown, the x-axis is the position measured over the entire length of the evaporation source (e.g., the entire length of four evaporation sources distributed along the substrate transport direction). The y-axis represents the layer thickness normalized to percent [%], i.e., the y-axis provides a relative measure for the amount of material deposited on the substrate. In other words, the y-axis provides the percentage of the useful layer thickness achieved by the material deposition device. Since the heat load depends on the amount of material deposited on the substrate, the relative layer thickness may provide information about the relative heat load at various positions.

[0071]

[0070] It is beneficial to achieve a high deposition yield, i.e., a layer thickness of 5 to 100 μm. However, the more material is deposited on the substrate, the greater the condensation energy provided to the substrate, resulting in a higher substrate temperature, which can damage the substrate, for example, resulting in wrinkles in the foil substrate. Furthermore, the maximum temperature of the foil is limited by the melting temperature of the material being deposited. In the case of Li, the maximum substrate temperature is beneficially significantly lower (e.g., 20°C lower) than the melting temperature of the material. In the case of Li, the melting temperature of the material is 180°C. Therefore, it is beneficial to provide a smooth increase in the temperature of the substrate during the process to prevent temperature-related damage to the substrate while still achieving a high deposition rate and, in particular, the same deposited layer thickness.

[0072] 4B in box 437 shows that the setup including the tilted nozzle further smooths the temperature rise compared to the profile of curve 438 where the nozzle is not tilted. Thus, the combination of a temperature-controlled shield and the use of a tilted outermost nozzle provides a smoother temperature rise while still providing a high deposition yield.

[0073] According to several embodiments, which may be combined with any other embodiments described herein, a method for depositing a material onto a substrate in a reduced pressure chamber is provided. In step 502, a material is evaporated in an evaporation source having a vapor emission area. In step 504, the evaporated material is directed toward a substrate area by a temperature-controlled shield, the substrate area being larger than the vapor emission area. In some embodiments, the substrate area is larger in the substrate transport direction. For example, the substrate area outside the emission area has a deposition rate that is smaller than the deposition rate within the emission area, and in particular, at least 10% of the substrate area outside the emission area has a deposition rate that is at least 50% smaller than the deposition rate within the emission area. According to some embodiments, the material may be evaporated in an evaporation device according to an embodiment of the present disclosure and / or may be directed with a temperature-controlled shield according to an embodiment of the present disclosure.

[0074] According to yet a further embodiment, there is provided a method of manufacturing a battery anode, which may include depositing a material onto a substrate in a reduced pressure chamber according to any of the embodiments described herein.

[0075] According to yet a further embodiment, there is provided a method of manufacturing a battery anode, which may include directing a web including or consisting of an anode layer in a material deposition apparatus according to any embodiment described herein, and depositing a lithium-containing material or lithium on the web using a vapor deposition apparatus.

[0076] According to some embodiments, which may be combined with other embodiments described herein, in a method for manufacturing a battery anode, the web comprises or consists of copper. According to some implementations, the web may further comprise graphite and silicon and / or silicon oxide. For example, lithium may pre-lithiate a layer comprising graphite and silicon and / or silicon oxide.

[0077]

[0076] In particular, the following embodiments are described herein: Embodiment 1. 1. A temperature-controlled shield for an evaporation source, the temperature-controlled shield configured to provide a pre-heat zone or a post-cool zone. Embodiment 2. 2. The temperature-controlled shield for an evaporation source of embodiment 1, wherein the temperature-controlled shield comprises one of a heating device or a cooling device. Embodiment 3. 3. The temperature-controlled shield for an evaporation source of embodiment 1 or 2, wherein the temperature-controlled shield is disposed at and extends outward from the evaporation source. Embodiment 4. 4. The temperature-controlled shield for an evaporation source of any one of embodiments 1 to 3, wherein the temperature-controlled shield includes a straight portion and a curved end. Embodiment 5. 5. The temperature-controlled shield for an evaporation source of embodiment 4, wherein the bent end extends in a direction directed toward the substrate support and away from the evaporation source, and in particular is substantially parallel to the orientation of the evaporation source. Embodiment 6. 6. The temperature-controlled shield for an evaporation source of any one of embodiments 1 to 5, wherein the temperature-controlled shield comprises a thermally conductive material. Embodiment 7. 7. A material deposition apparatus for depositing an evaporative material onto a substrate, comprising the temperature-controlled shield of any one of embodiments 1 to 6. Embodiment 8. 1. A material deposition apparatus for depositing an evaporation material onto a substrate, comprising: an evaporation source for providing the evaporation material to the substrate, the evaporation source having a first end and a second end opposite the first end and a surface having a length between the first end and the second end; and 1. A material deposition apparatus comprising: one or more temperature-controlled shields disposed at at least one of the first end or the second end of the evaporation source, the one or more temperature-controlled shields extending outward from the evaporation source and providing a width that is at least 20% of the length of the surface between the first end and the second end of the evaporation source. Embodiment 9. 1. A material deposition apparatus for depositing an evaporation material onto a substrate, comprising: an evaporation source for providing the evaporation material to the substrate, the evaporation source having a first end and a second end opposite the first end; and 1. A material deposition apparatus for depositing an evaporative material onto a substrate, comprising: one or more temperature-controlled shields disposed at at least one of the first end or the second end of the evaporation source, the one or more temperature-controlled shields extending outward from the evaporation source at a wide angle. Embodiment 10. 10. A material deposition apparatus for depositing an evaporation material onto a substrate according to any one of claims 7 to 9, wherein the wide angle is between 95° and 180°. Embodiment 11. 11. A material deposition apparatus for depositing an evaporation material onto a substrate according to any one of embodiments 7 to 10, wherein the one or more temperature-controlled shields extend towards the substrate transport device and are configured to provide a heating zone or a cooling zone, in particular a pre-heating zone or a post-cooling zone. Embodiment 12. 12. A material deposition apparatus for depositing an evaporation material onto a substrate according to any one of claims 7 to 11, wherein the material deposition apparatus further comprises a substrate transport device disposed above the evaporation source. Embodiment 13. 1. A material deposition apparatus for depositing an evaporation material onto a substrate, comprising: a substrate conveying device for conveying the substrate along a substrate conveying direction; and A material deposition apparatus for depositing an evaporation material onto a substrate, comprising at least two evaporation sources along the substrate transport direction for providing the evaporation material to the substrate, each of the at least two evaporation sources comprising one or more asymmetric temperature-controlled shields. Embodiment 14. 14. A material deposition apparatus for depositing an evaporation material onto a substrate according to claim 13, wherein two asymmetric temperature-controlled shields are disposed on either side of each of the at least two evaporation sources, and the two asymmetric temperature-controlled shields extend in different directions towards the substrate transport device. Embodiment 15. 15. A material deposition apparatus for depositing an evaporation material onto a substrate according to claim 13 or 14, wherein the second asymmetric temperature-controlled shields of the at least two evaporation sources are positioned adjacent to each other, and the second asymmetric temperature-controlled shields are angled away from the substrate and / or towards each other. Embodiment 16. 16. A material deposition apparatus for depositing an evaporation material onto a substrate of any one of embodiments 13 to 15, wherein the first asymmetric temperature-controlled shield is the temperature-controlled shield of any one of embodiments 1 to 6. Embodiment 17. 17. A material deposition apparatus for depositing an evaporative material onto a substrate according to any one of claims 7 to 16, wherein the material deposition apparatus further comprises a reduced pressure chamber housing at least the temperature-controlled shield. Embodiment 18. The material deposition apparatus of any one of embodiments 7 to 16 when indirectly or directly dependent on embodiment 13, wherein the two asymmetric temperature-controlled shields are configured to provide material between the at least two evaporation sources and / or to provide a deposition area from a first end of a first evaporation source to a second end of a second evaporation source. Embodiment 19. 1. An evaporation source for providing evaporation material to a substrate within a reduced pressure chamber, the evaporation source comprising: a nozzle assembly shield having a plurality of nozzles arranged in at least one row, the row including two outermost nozzles inclined in different directions. Embodiment 20. an evaporation source for providing evaporation material to a substrate within a reduced pressure chamber, comprising: a nozzle assembly shield having a first end and a second end and a surface facing the substrate between the first end and the second end, the nozzle assembly shield having a plurality of openings arranged in at least one row in the surface between the first end and the second end, the at least one row having a first outermost opening adjacent the first end and a second outermost opening adjacent the second end; an evaporation source comprising a plurality of nozzles extending through the plurality of openings, the plurality of nozzles including a first outermost nozzle extending through the first outermost opening and a second outermost nozzle extending through the second outermost opening, the first outermost nozzle and the second outermost nozzle being inclined at an angle with respect to the surface between the first end and the second end. Embodiment 21. 21. The evaporation source of embodiment 20, wherein the angle is between 5° and 25°, particularly between 5° and 15°, more particularly between 5° and 10°. Embodiment 22. 22. A material deposition apparatus for depositing an evaporation material onto a substrate according to any one of claims 7 to 18, wherein the material deposition apparatus comprises at least one evaporation source according to claims 19 to 21. Embodiment 23. 1. A method for depositing a material onto a substrate in a reduced pressure chamber, comprising: evaporating the material in an evaporation source having a vapor emission area; and A method comprising directing vaporized material toward a substrate area by a temperature controlled shield, the substrate area being larger than the vapor emission area. Embodiment 24. 24. The method of embodiment 23, wherein the substrate area is larger in a transport direction of the substrate. Embodiment 25. 25. The method of embodiment 23 or 24, wherein the substrate area outside the emission area has a deposition rate that is less than the deposition rate within the emission area, in particular, at least 10% of the substrate area outside the emission area has a deposition rate that is at least 50% less than the deposition rate within the emission area. Embodiment 26. 26. A method for manufacturing an anode of a battery, comprising a method for depositing a material on a substrate in a reduced pressure chamber of any one of embodiments 23 to 25. Embodiment 27. 1. A method of manufacturing a battery anode, comprising: Guiding a web comprising or consisting of an anode layer in the material deposition apparatus of any one of embodiments 7 to 18; and depositing a lithium-containing material or lithium onto the web using the material deposition device. Embodiment 28. 28. The method of embodiment 27, wherein the web comprises copper. Embodiment 29. 28. The method of claim 27, wherein the web comprises graphite and silicon and / or silicon oxide. Embodiment 30. 30. The method of embodiment 29, wherein the anode layer is pre-lithiated.

[0078]

[0077] While the foregoing description is directed to embodiments of the present disclosure, other and further embodiments of the present disclosure may be devised without departing from the basic scope of the present disclosure, the scope of the present disclosure being defined by the claims that follow.

Claims

1. A temperature-controlled shield for an evaporation source, the temperature-controlled shield being configured to provide a pre-heating zone or a post-cooling zone, the temperature-controlled shield being positioned at the evaporation source and extending outward from the evaporation source toward a substrate transport device, the temperature-controlled shield including a straight portion and a curved end.

2. The temperature controlled shield for an evaporation source of claim 1 , wherein the temperature controlled shield includes one of a heating device or a cooling device.

3. The temperature-controlled shield for an evaporation source of claim 1 , wherein the bent end extends in a direction directed toward the substrate transport device, away from the evaporation source.

4. A material deposition apparatus (100) for depositing an evaporated material onto a substrate, comprising: A material deposition apparatus (100) comprising one or more temperature-controlled shields according to any one of claims 1 to 3.

5. A material deposition apparatus (100) for depositing an evaporated material onto a substrate, comprising: an evaporation source (110) for providing the evaporation material to the substrate, the evaporation source having a first end and a second end opposite the first end and a surface having a length between the first end and the second end; and 1. A material deposition apparatus (100) comprising: one or more temperature-controlled shields disposed at at least one of the first end or the second end of the evaporation source, the one or more temperature-controlled shields extending outward from the evaporation source toward a substrate transport device, providing a width of at least 20% of the length of the surface between the first end and the second end of the evaporation source, and including straight portions and curved ends.

6. A material deposition apparatus (100) for depositing an evaporated material onto a substrate, comprising: an evaporation source (110) for providing the evaporation material to the substrate, the evaporation source having a first end and a second end opposite the first end; and A material deposition apparatus (100) for depositing an evaporation material onto a substrate, comprising: one or more temperature-controlled shields disposed at at least one of the first end or the second end of the evaporation source, the one or more temperature-controlled shields extending outward from the evaporation source toward a substrate transport device at a wide angle and including a straight portion and a curved end.

7. 7. A material deposition apparatus (100) for depositing an evaporation material onto a substrate according to claim 4, wherein the one or more temperature-controlled shields extend towards a substrate transport device and are configured to provide a heating or cooling zone.

8. A material deposition apparatus (200) for depositing an evaporation material onto a substrate, comprising: a substrate conveying device (120) for conveying said substrate along a substrate conveying direction; At least two evaporation sources (110) along the substrate conveying direction for providing the evaporation material to the substrate; and At least two asymmetric temperature-controlled shields Including, A material deposition apparatus (200) for depositing evaporated material onto a substrate, wherein one or more asymmetric temperature-controlled shields are disposed on each of the at least two evaporation sources and extend outward from the evaporation sources toward the substrate transport device.

9. 9. A material deposition apparatus (200) for depositing an evaporation material onto a substrate as described in claim 8, wherein two of the asymmetric temperature-controlled shields are disposed on either side of each of the at least two evaporation sources and extend in different directions toward the substrate transport device.

10. 10. A material deposition apparatus (200) for depositing an evaporation material onto a substrate as described in claim 9, wherein the second asymmetric temperature-controlled shields disposed on each of the at least two evaporation sources are disposed adjacent to each other, and the second asymmetric temperature-controlled shields have one of the following configurations: a configuration bent away from the substrate; and a configuration bent toward each other.

11. 10. A material deposition apparatus (200) for depositing an evaporation material onto a substrate as described in claim 9, wherein a first asymmetric temperature-controlled shield is a temperature-controlled shield for an evaporation source, the temperature-controlled shield being configured to provide a pre-heating zone or a post-cooling zone, the temperature-controlled shield being disposed at the evaporation source and extending outward from the evaporation source toward a substrate transport device.

12. 11. The material deposition apparatus for depositing evaporation material onto a substrate according to claim 9 or 10, wherein the two asymmetric temperature-controlled shields are configured to provide one of the group consisting of: providing material between the at least two evaporation sources; and providing a deposition area from a first end of a first evaporation source to a second end of a second evaporation source.

13. 1. A method for depositing a material onto a substrate in a reduced pressure chamber, comprising: evaporating the material in an evaporation source having a vapor emission area; and 1. A method for depositing material onto a substrate in a reduced pressure chamber, comprising: directing evaporation material toward a substrate area by a temperature-controlled shield, the substrate area being larger than the vapor emission area, the temperature-controlled shield being positioned at the evaporation source, extending outward from the evaporation source toward a substrate transport device, and including a straight portion and a curved end.

14. 14. The method for depositing material onto a substrate in a reduced pressure chamber of claim 13, wherein the substrate area is larger in a transport direction of the substrate.

15. 15. A method for depositing material onto a substrate in a reduced pressure chamber according to claim 13 or 14, wherein an area of ​​the substrate outside the vapor discharge area has a deposition rate that is less than the deposition rate within the vapor discharge area.

16. 15. A method for depositing material onto a substrate in a reduced pressure chamber as described in claim 13 or 14, wherein at least 10% of the substrate area outside the vapor discharge area has a deposition rate that is at least 50% less than the deposition rate within the vapor discharge area.

17. 1. A method for depositing a material onto a substrate in a reduced pressure chamber, comprising: evaporating the material in an evaporation source having a vapor emission area, the evaporation source including a plurality of nozzles including two outermost nozzles, the two outermost nozzles being inclined in different directions; and A method for depositing material onto a substrate in a reduced pressure chamber, comprising directing evaporation material toward a substrate area by a temperature-controlled shield, the substrate area being larger than the vapor emission area, the temperature-controlled shield being positioned at the evaporation source and extending outward from the evaporation source toward a substrate transport device.

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