System for controlling plasma density distribution profile including multi-RF zoned substrate support

Abstract

The substrate processing system includes a substrate support, N RF sources, and a controller. The substrate support is disposed within a processing chamber and supports a substrate on an upper surface thereof. The substrate support includes a base plate made of a conductive material and M electrodes disposed within the base plate. Each of the N RF sources supplies a respective RF signal to one or more of the M electrodes (where M and N are integers greater than or equal to 2), with each RF signal being supplied to a different set of the M electrodes, each set including a different one or more of the M electrodes. The controller controls one or more coils to independently strike and maintain a plasma within the processing chamber from the N RF sources and individually control the voltage outputs of the N RF sources to regulate the plasma within the processing chamber.

Description

[Technical Field]

[0001] [CROSS-REFERENCE TO RELATED APPLICATIONS] This application claims the benefit of U.S. Provisional Application No. 63 / 092,948, filed October 16, 2020, the entire disclosure of which is incorporated herein by reference.

[0002] The present disclosure relates to a system for controlling a plasma density distribution profile within a processing chamber. [Background technology]

[0003] The background discussion provided herein is intended to provide a general overview of the contents of the present disclosure, and the work of the inventors named herein, to the extent described in this Background section, as well as aspects of the description that may not be considered prior art at the time of filing, are not admitted expressly or implicitly as prior art against the present disclosure.

[0004] In the fabrication of semiconductor devices, etching and deposition processes are performed in processing chambers. An ionized gas, or plasma, is introduced into the processing chamber to etch (or remove) material from, and sputter or deposit material onto, a substrate, such as a semiconductor wafer. The substrate is mounted in the processing chamber on a substrate support, such as an electrostatic chuck or pedestal. Generating a plasma for use in a manufacturing or assembly process typically begins with introducing a process gas into the processing chamber. Gas molecules in the processing chamber are then excited to generate the plasma.

[0005] The processing chamber may include a transformer coupled plasma (TCP) reactor coil. A radio frequency (RF) signal generated by a power supply is supplied to the TCP reactor coil. The TCP reactor coil is driven by a transformer coupled capacitive tuning (TCCT) matching network. The TCCT matching network receives the RF signal supplied by the power supply and allows tuning of the power supplied to the TCP reactor coil. A dielectric window, constructed of a material such as ceramic, is integrated into the top surface of the processing chamber. The dielectric window allows transmission of the RF signal from the TCP reactor coil to the interior of the processing chamber. The RF signal excites gas molecules in the processing chamber, generating plasma. Summary of the Invention

[0006] A substrate processing system is provided, including a substrate support, N RF sources, and a controller. The substrate support is disposed within a processing chamber and configured to support a substrate on an upper surface thereof, and includes a base plate made of a conductive material and M electrodes (M is an integer greater than or equal to 2) disposed within the base plate. Each of the N RF sources is configured to supply a respective RF signal to one or more of the M electrodes (where M and N are integers greater than or equal to 2), each RF signal being supplied to a different set of the M electrodes, each set including a different one or more of the M electrodes. The controller is configured to cause one or more coils to independently strike and maintain a plasma within the processing chamber from the N RF sources and to individually control the voltage outputs of the N RF sources to regulate the plasma within the processing chamber.

[0007] In another feature, M is greater than or equal to N. In another feature, N is greater than or equal to M.

[0008] In other features, the controller is configured to at least one of: select which one or more of the N RF sources will provide one or more of the respective RF signals to one of the M electrodes; or, for each set of M electrodes, select which one or more of the N RF sources will provide one or more of the respective RF signals to that set of M electrodes. In other features, M is greater than or equal to N.

[0009] In other features, the substrate processing system further includes N cavities located on the upper surface of the base plate, and the M electrodes are disposed within the N cavities. In other features, the M electrodes are embedded in a dielectric material located within the N cavities.

[0010] In other features, the substrate processing system further includes N cavities located on the upper surface of the base plate, and the M electrodes are disposed within the N cavities. In other features, the M electrodes are embedded in a dielectric material located within the N cavities.

[0011] In other features, the substrate processing system further includes N cavities located on the upper surface of the base plate and having M electrodes disposed therein, and M (M is greater than or equal to 1) dielectric separators disposed between the M electrodes and the substrate.

[0012] In other features, the substrate processing system further includes a dielectric layer disposed between the M electrodes and the base plate. In other features, the N RF signals have the same frequency as the frequency used to generate the plasma. In other features, the N RF signals have a different frequency than the frequency used to generate the plasma.

[0013] In other features, the substrate processing system further includes a processing chamber, the one or more coils including an inner coil and an outer coil, the inner coil disposed outside the processing chamber adjacent a window of the processing chamber, and the outer coil disposed outside the processing chamber adjacent the window and spaced radially outward from the inner coil, and an RF source configured to supply power to the inner coil and the outer coil, and a controller further configured to control the RF source to adjust the current supplied to the inner coil relative to the current supplied to the outer coil.

[0014] In other features, the controller is configured to control the RF source to either supply more current to the outer coil than to the inner coil or supply more current to the inner coil than to the outer coil. In other features, the substrate processing system further includes an RF source configured to supply a bias voltage to the baseplate.

[0015] In other features, at least one of the N RF signals has a different frequency than at least one other of the N RF signals. In other features, the N RF signals have the same frequency. In other features, the substrate processing system further includes N matching networks disposed between the N RF sources and the M electrodes.

[0016] In other features, a substrate processing system is provided, including a substrate support, N radio frequency (RF) sources, and a controller. The substrate support is disposed within a processing chamber and configured to support a substrate on an upper surface thereof, and includes a base plate made of a conductive material and N electrodes (N is an integer greater than or equal to 2) disposed within the base plate. The N RF sources are configured to supply N RF signals to the N electrodes, respectively. The controller is configured to independently strike and maintain a plasma in the processing chamber from the N RF sources and individually control voltage outputs of the N RF sources to regulate the plasma in the processing chamber.

[0017] In other features, a substrate processing system is provided, including a processing chamber, a substrate support, an inner coil, an outer coil, N RF sources, N matching networks, and a controller. The processing chamber includes a window. The substrate support is disposed within the processing chamber and configured to support a substrate on an upper surface thereof, and includes a base plate and M electrodes (M is an integer greater than or equal to 2) disposed within the base plate. The inner coil is disposed outside the processing chamber adjacent to the window. The outer coil is disposed outside the processing chamber adjacent to the window, radially outward from the inner coil, and spaced apart from the inner coil. Each of the N (N is an integer greater than or equal to 2) RF sources is configured to supply a respective RF signal to one or more of the M electrodes, each RF signal being supplied to a different set of the M electrodes, each set including a different one or more of the M electrodes. The N matching networks are disposed between the N RF sources and the M electrodes. The controller is configured to strike a plasma by supplying RF power to the inner coil and the outer coil, and to vary the plasma density distribution profile within the processing chamber by (i) varying the power supplied to the inner coil relative to the outer coil, and (ii) varying the power supplied to at least one of the M electrodes relative to at least another one of the M electrodes.

[0018] In another feature, M is greater than or equal to N. In another feature, N is greater than or equal to M.

[0019] In other features, the controller is configured to at least one of: select which one or more of the N RF sources will provide one or more of the respective RF signals to one of the M electrodes; or, for each set of M electrodes, select which one or more of the N RF sources will provide one or more of the respective RF signals to that set of M electrodes. In other features, M is greater than or equal to N.

[0020] In other features, the substrate processing system further includes N cavities located on the upper surface of the base plate, and the M electrodes are disposed within the N cavities. In other features, the M electrodes are embedded in a dielectric material located within the N cavities.

[0021] In other features, the substrate processing system further includes N cavities located on the upper surface of the base plate, and the M electrodes are disposed within the N cavities. In other features, the M electrodes are embedded in a dielectric material located within the N cavities.

[0022] In other features, the substrate processing system further includes N cavities located on the upper surface of the base plate and having M electrodes disposed therein, and M (M is greater than or equal to 1) dielectric separators disposed between the M electrodes and the substrate.

[0023] In other features, the substrate processing system further includes a dielectric layer disposed between the M electrodes and the base plate. In other features, the frequencies of the N RF signals are the same as the frequency used to generate the plasma.

[0024] In other features, the frequency of the N RF signals is different from the frequency used to generate the plasma. In other features, the substrate processing system further includes a matching network connected between the RF source and the inner coil and the outer coil.

[0025] In other features, the controller is configured to control the RF source to supply more current to the outer coil than to the inner coil. In other features, the substrate processing system further includes an RF source configured to supply a bias voltage to the baseplate.

[0026] In other features, at least one of the N RF signals has a different frequency than at least another one of the N RF signals. In other features, the N RF signals have the same frequency.

[0027] In other features, the M electrodes include a first electrode and a second electrode, and the controller is configured to control supply of the RF signals such that a first amount of power is supplied to the inner coil and a second amount of power is supplied to the outer coil, the first amount of power being different from the second amount of power, and such that a first RF voltage is supplied to the first electrode and a second RF voltage is supplied to the second electrode, the first RF voltage being greater than the second RF voltage.

[0028] In other features, the first electrode is disposed radially inward from the second electrode on the base plate and receives a higher RF voltage than the second electrode. In other features, the first electrode is disposed radially outward from the second electrode on the base plate and receives a higher RF voltage than the second electrode.

[0029] In other features, the M electrodes include a first set of electrodes and a second set of electrodes, the first set of electrodes corresponding to a first RF zone, and the second set of electrodes corresponding to a second RF zone, the second RF zone being located radially inward from the first RF zone.

[0030] In other features, the M electrodes are disposed in a plane parallel to and offset from the top surface of the substrate support.In other features, the M electrodes are disposed on separate layers of the base plate.

[0031] In other features, the controller is configured to control the N RF signals to regulate the plasma to enhance plasma uniformity during a transient period during start-up of the N RF sources. In other features, one or more of the M electrodes also operate as heating elements.

[0032] In other features, a substrate processing system is provided, including a processing chamber, a substrate support, an inner coil, an outer coil, N RF sources, N matching networks, and a controller. The processing chamber includes a window. The substrate support is disposed within the processing chamber and configured to support a substrate on an upper surface thereof, and includes a base plate and N electrodes (N is an integer greater than or equal to 2) disposed within the base plate. The inner coil is disposed outside the processing chamber adjacent to the window. The outer coil is disposed outside the processing chamber adjacent to the window and spaced radially outward from the inner coil. The N RF sources are configured to supply N RF signals. The N matching networks are disposed between the N RF sources and the N electrodes. The controller is configured to strike a plasma by supplying RF power to the inner coil and the outer coil, and to vary a plasma density distribution profile within the processing chamber by (i) varying the power supplied to the inner coil relative to the outer coil, and (ii) varying the power supplied to at least one of the N electrodes relative to at least another one of the N electrodes.

[0033] In other features, a substrate processing system is provided, including a processing chamber, a substrate support, an inner coil, an outer coil, N RF sources, N matching networks, and a controller. The processing chamber includes a window. The substrate support is disposed within the processing chamber and configured to support a substrate on an upper surface thereof, and includes a base plate and a dielectric layer disposed above the base plate and having M electrodes (M is an integer greater than or equal to 2). The inner coil is disposed outside the processing chamber adjacent to the window. The outer coil is disposed outside the processing chamber adjacent to the window and spaced radially outward from the inner coil. Each of the N (N is an integer greater than or equal to 2) RF sources is configured to supply a respective RF signal to one or more of the M electrodes, each RF signal being supplied to a different set of the M electrodes, each set including a different one or more of the M electrodes. The N matching networks are disposed between the N RF sources and the M electrodes. The controller is configured to strike a plasma by supplying RF power to the inner coil and the outer coil, and to vary the plasma density distribution profile within the processing chamber by (i) varying the power supplied to the inner coil relative to the outer coil, and (ii) varying the power supplied to at least one of the M electrodes relative to the power supplied to at least another one of the M electrodes.

[0034] In another feature, M is greater than or equal to N. In another feature, N is greater than or equal to M.

[0035] In other features, the controller is configured to at least one of: select which one or more of the N RF sources will provide one or more of the respective RF signals to one of the M electrodes; or, for each set of M electrodes, select which one or more of the N RF sources will provide one or more of the respective RF signals to that set of M electrodes. In other features, M is greater than or equal to N.

[0036] In other features, the substrate processing system further includes N cavities located on the upper surface of the base plate, and the M electrodes are disposed within the N cavities. In other features, the M electrodes are embedded in a dielectric material located within the N cavities.

[0037] In other features, the frequencies of the N RF signals are the same as the frequency used to generate the plasma. In other features, the frequencies of the N RF signals are different from the frequency used to generate the plasma.

[0038] In other features, the substrate processing system further includes a matching network connected between the RF source and the inner coil and the outer coil. In other features, the controller is configured to control the RF source to supply more current to the outer coil than to the inner coil. In other features, the substrate processing system further includes the RF source configured to supply a bias voltage to the baseplate.

[0039] In other features, at least one of the N RF signals has a different frequency than at least another one of the N RF signals. In other features, the N RF signals have the same frequency.

[0040] In other features, the M electrodes include a first electrode and a second electrode, and the controller is configured to control supply of the RF signals such that a first amount of power is supplied to the inner coil and a second amount of power is supplied to the outer coil, the first amount of power being different from the second amount of power, and such that a first RF voltage is supplied to the first electrode and a second RF voltage is supplied to the second electrode, the first RF voltage being greater than the second RF voltage.

[0041] In other features, the first electrode is disposed radially inward from the second electrode on the base plate and receives a higher RF voltage than the second electrode. In other features, the first electrode is disposed radially outward from the second electrode on the base plate and receives a higher RF voltage than the second electrode.

[0042] In other features, the M electrodes include a first set of electrodes and a second set of electrodes, the first set of electrodes corresponding to a first RF zone, and the second set of electrodes corresponding to a second RF zone, the second RF zone being located radially inward from the first RF zone.

[0043] In other features, the M electrodes are disposed in a plane parallel to and below the top surface of the substrate support in the dielectric layer, hi other features, the M electrodes are disposed on separate layers of the base plate.

[0044] In other features, the controller is configured to control the N RF signals to regulate the plasma to enhance plasma uniformity during a transient period during start-up of the N RF sources. In other features, one or more of the M electrodes also operate as heating elements.

[0045] In other features, a substrate processing system is provided, including a processing chamber, a substrate support, an inner coil, an outer coil, N RF sources, N matching networks, and a controller. The processing chamber includes a window. The substrate support is disposed within the processing chamber and configured to support a substrate on an upper surface thereof, and includes a base plate and a dielectric layer disposed above the base plate and having N electrodes (N is an integer greater than or equal to 2). The inner coil is disposed outside the processing chamber adjacent to the window. The outer coil is disposed outside the processing chamber adjacent to the window and spaced radially outward from the inner coil. The N radio frequency (RF) sources are configured to provide N RF signals. The N matching networks are disposed between the N RF sources and the N electrodes. The controller is configured to strike a plasma by supplying RF power to the inner coil and the outer coil, and to vary the plasma density distribution profile within the processing chamber by (i) varying the power supplied to the inner coil relative to the outer coil, and (ii) varying the power supplied to at least one of the N electrodes relative to the power supplied to at least another one of the N electrodes.

[0046] Further areas of applicability of the present disclosure will become apparent from the detailed description, claims, and drawings. The detailed description and specific examples are for purposes of illustration only and are not intended to limit the scope of the present disclosure. [Brief explanation of the drawings]

[0047] The present disclosure will become more fully understood from the detailed description and the accompanying drawings, wherein:

[0048] [Figure 1] FIG. 1 is a diagram showing the angle of ion incidence relative to the plasma sheath above the surface of the substrate.

[0049] [Figure 2] FIG. 2 is a functional block diagram of a first portion of an exemplary substrate processing system including a plasma density profile control system according to the present disclosure.

[0050] [Figure 3] FIG. 3 is a functional block diagram of a second portion of the substrate processing system of FIG.

[0051] [Figure 4] FIG. 4 is a functional block diagram of a portion of another substrate processing system including a plasma density profile control system according to the present disclosure.

[0052] [Figure 5] FIG. 5 is a cross-sectional view of an example portion of a substrate support including a radio frequency (RF) circuit having multiple RF sections according to the present disclosure.

[0053] [Figure 6] FIG. 6 is an RF circuit schematic diagram of a portion of the substrate support of FIG.

[0054] [Figure 7] FIG. 7 is an exemplary plot of ion flux and plasma density versus substrate radius for a substrate support without RF electrodes.

[0055] [Figure 8] FIG. 8 is an exemplary plot of ion flux versus substrate radius for the substrate support of FIG. 5 in which the radially inner area experiences a higher RF voltage than the radially outer area in accordance with the present disclosure.

[0056] [Figure 9] FIG. 9 is an exemplary plot of ion flux versus substrate radius for the substrate support of FIG. 5 in which the radially outer regions experience a higher RF voltage than the radially inner regions in accordance with the present disclosure.

[0057] [Figure 10A] FIG. 10A is an exemplary plot of energy versus ion spread angle for two RF zones in which the radially inner zone experiences a higher RF voltage than the radially outer zone in accordance with the present disclosure. [Figure 10B] FIG. 10B is an exemplary plot of energy versus ion spread angle for two RF zones in which the radially inner zone experiences a higher RF voltage than the radially outer zone in accordance with the present disclosure.

[0058] [Figure 11A] FIG. 11A is an exemplary plot of energy versus ion spread angle for two RF zones in which the radially outer zone experiences a higher RF voltage than the radially inner zone in accordance with the present disclosure. [Figure 11B] FIG. 11B is an exemplary plot of energy versus ion spread angle for two RF zones in which the radially outer zone experiences a higher RF voltage than the radially inner zone in accordance with the present disclosure.

[0059] [Figure 12] FIG. 12 is a cross-sectional view of an example portion of a substrate support including an RF circuit having multiple RF sections, including a bias RF section, according to the present disclosure.

[0060] [Figure 13]FIG. 13 is an RF circuit schematic diagram of a portion of the substrate support of FIG.

[0061] [Figure 14] FIG. 14 is a cross-sectional view of an example portion of a substrate support including an RF circuit having multiple RF sections including a bias RF section and a dielectric layer according to the present disclosure.

[0062] [Figure 15] FIG. 15 is an RF circuit schematic diagram of a portion of the substrate support of FIG.

[0063] [Figure 16] FIG. 16 is an exemplary plot of ion flux versus substrate radius for the substrate support of FIG.

[0064] [Figure 17] FIG. 17 is a cross-sectional view of an example portion of a substrate support including an RF circuit having multiple RF sections with dielectric layers without bias RF electrodes according to the present disclosure.

[0065] [Figure 18] FIG. 18 is an RF circuit schematic diagram of a portion of the substrate support of FIG.

[0066] [Figure 19] FIG. 19 is an exemplary plot of ion flux versus substrate radius for the substrate support of FIG.

[0067] [Figure 20A] FIG. 20A is an exemplary plot of energy versus ion spread angle for two RF zones provided by the substrate support of FIG. 14 according to the present disclosure. [Figure 20B] FIG. 20B is an exemplary plot of energy versus ion spread angle for two RF zones provided by the substrate support of FIG. 14 in accordance with the present disclosure.

[0068] [Figure 21A]FIG. 21A is an exemplary plot of energy versus ion spread angle for two RF zones provided by the substrate support of FIG. 17 according to the present disclosure. [Figure 21B] FIG. 21B is an exemplary plot of energy versus ion spread angle for two RF zones provided by the substrate support of FIG. 17 according to the present disclosure.

[0069] [Figure 22] FIG. 22 is a side view of a feature on a substrate showing normal ion incidence and aspect ratio parameters.

[0070] [Figure 23] FIG. 23 is a side view of a feature formed by sharp ion incidence.

[0071] [Figure 24A] FIG. 24A is an exemplary plot of energy versus ion spread angle for two RF sections provided by the substrate support of FIG. 17, where the center potential is significantly higher than the edge potential, in accordance with the present disclosure. [Figure 24B] FIG. 24B is an exemplary plot of energy versus ion spread angle for two RF sections provided by the substrate support of FIG. 17 where the center potential is significantly higher than the edge potential in accordance with the present disclosure.

[0072] [Figure 25] FIG. 25 is an exemplary plot of ion flux versus substrate radius for the substrate support of FIG. 17 where the center potential is significantly higher than the edge potential in accordance with the present disclosure.

[0073] [Figure 26] FIG. 26 is a top view of a base plate of a substrate support including RF electrodes arranged in multiple RF zones in accordance with the present disclosure.

[0074] [Figure 27]FIG. 27 is a cross-sectional view of an example portion of a substrate support including multiple layers of RF electrodes for multiple RF zones according to the present disclosure.

[0075] [Figure 28] FIG. 28 illustrates a method for adjusting etch rate uniformity according to one embodiment of the present disclosure.

[0076] In the drawings, reference numbers may be reused to identify similar and / or identical elements. DETAILED DESCRIPTION OF THE INVENTION

[0077] 1 shows an ion incidence angle Φ relative to a plane 100 extending perpendicular to a top surface 102 of a substrate 104. The substrate 104 is mounted on a substrate support 106 and may receive a bias voltage represented by a voltage source 108. A plasma 110 is generated above the substrate 104. An electron depletion region 112 exists between the plasma 110 and the substrate 104, called the plasma sheath. The plasma sheath has a thickness s. The plasma density is proportional to the reciprocal of the square root of the thickness s.

[0078] For vertical, unbiased, or directional etching of a substrate, the ion flow should be in a direction parallel to the flat surface 100 and / or perpendicular to the top surface 102, as indicated by arrow 120. However, due to plasma non-uniformities that cause the sheath to be non-uniform, and because ions impinge perpendicularly on the sheath, such non-uniform sheath or density can result in ion tilt angles of up to several degrees. This is indicated by arrow 124, which can result in tilt-etching of features (e.g., holes, trenches, etc.) at acute angles other than 90° relative to the surface 102. Stringent requirements may include operation with ion incidence or tilt angles (or tilt angles) of less than 0.02°.

[0079] The ion tilt angle (which is a result of plasma density and sheath non-uniformity) is directly related to the etch rate non-uniformity. The ion non-uniformity rate is given by Equation 1, where ionnonuni It can be estimated as the maximum ion flux minus the minimum ion flux divided by the maximum ion flux, as expressed by (where ρ is the ion non-uniformity). The ion non-uniformity is expressed as the etch rate non-uniformity, ER nonuni is proportional to.

number

[0080] Various parameters may be adjusted in an attempt to improve plasma uniformity and minimize ion tilt angles. As an example, a transformer-coupled plasma (TCP) system may include an inner reactor coil and an outer reactor coil positioned above a TCP window. Adjusting the reactor coil size, reactor coil position, and amount of current applied to the reactor coils can improve etch rate and plasma uniformity. The size of the chamber in which the inner and outer reactor coils are located may be increased to accommodate larger reactor coils and / or increase the distance between the reactor coils. Another adjustable parameter is the ratio of the amount of current supplied to the inner reactor coil divided by the amount of current supplied to the outer reactor coil. Adjusting the above parameters may improve etch rate uniformity by a limited amount. For example, adjusting these parameters may improve plasma nonuniformity to as low as 5–10%, but this may not meet the requirement of generating a highly uniform plasma capable of providing a tilt angle of less than 0.02 degrees.

[0081] As substrate feature size requirements decrease and resolution and aspect ratio requirements increase, it is becoming increasingly difficult to meet these requirements with existing processing systems, with some feature size requirements being as small as 10 nanometers.

[0082] Examples described herein include a plasma density profile control system having a substrate support (e.g., an electrostatic chuck) with multiple RF electrodes. RF power to the RF electrodes is controlled to provide multiple RF zones for improved etch rate uniformity across the substrate. The substrate support includes RF electrodes used to provide each RF zone. The RF electrodes are provided in separate arrangements with corresponding patterns. In some embodiments, the RF electrodes are on the same plane and / or layer of the substrate support. In other embodiments, the RF electrodes are on separate planes and / or layers and may overlap horizontally. Some embodiments include one or more dielectric layers and / or dielectric separators separating the RF electrodes from the substrate. The dielectric separators may be provided in a pattern similar to the pattern of the corresponding RF electrodes.

[0083] The disclosed RF electrodes, dielectric layers, and dielectric separators are implemented to improve and minimize ion angle tilt and plasma non-uniformity, including by controlling the RF voltage supplied to the RF electrodes. Improved plasma uniformity can be provided during and / or after an initial transient period when processing begins and the RF voltage across the substrate is not at a steady state. As an example, the initial transient period may last 200 to 900 milliseconds (ms) after the RF voltage is initially applied to the RF electrodes. In some embodiments, the RF electrode voltage is set to decrease the ion tilt angle, while in other embodiments, the RF electrode voltage is set to maintain or increase the ion tilt angle.

[0084] FIG. 2 illustrates a first portion 200 of an exemplary substrate processing system, including a plasma density profile control system 202. An exemplary remaining portion of the substrate processing system is illustrated in FIG. 2. The substrate processing system includes a processing chamber 204. A substrate support 205 is disposed at least partially within the processing chamber 204 and configured to hold a substrate 206. The plasma density profile control system 202 includes the substrate support 205, matching networks 207, 208, and 210, RF generators 212, 214, and 216, and a controller 220. The controller 220 controls the generators 212, 214, and 216 to generate RF voltages at RF electrodes 230, 232, 234, 236, and 238 via the matching networks 207, 208, and 210. The RF electrodes 230, 232, 234, 236, and 238 are implemented within the substrate support 205. FIG. 2 illustrates an example of an arrangement of RF electrodes. Other configurations are shown in Figures 4, 5, 12, 14, 17, 26, and 27.

[0085] The substrate processing system further includes a TCP reactor coil 240 disposed on a plenum 242 above a dielectric window 244. The plenum 242 may include a plurality of circular recessed areas (or channels) 246 in which the TCP reactor coil 240 (e.g., an inner coil set and an outer coil set) are disposed. A first power source 248 provides a first RF source signal to a transformer-coupled capacitively tuned (TCCT) matching network 250. The TCCT (or first) matching network 250 is included between the first power source 248 and the TCP reactor coil 240. The TCCT matching network 250 enables tuning of the power provided to the TCP reactor coil 240. Examples of TCP reactor coils and TCCT matching networks are shown in U.S. Pat. No. 10,297,422, which is incorporated herein by reference.

[0086] The dielectric window 244 is located adjacent to the plenum 242 and above a pinnacle 252 (PINNACLE is a registered trademark) to enable efficient transmission of a first RF source signal into the processing chamber 204 for generating a plasma. The pinnacle may refer to the top liner of the processing chamber and may be configured to support the dielectric window. The substrate support 205 is provided at the bottom of the processing chamber 204. The substrate support 205 supports a substrate 206. If the substrate support 205 is an electrostatic chuck, the substrate support 205 includes one or more clamping electrodes 254. In one embodiment, the substrate support 205 is formed from a conductive material, such as aluminum. In another embodiment, the substrate support is formed from a non-conductive material, such as ceramic.

[0087] The substrate support 205 (or a portion thereof) may be capacitively coupled to the substrate 206. A clamping voltage may be supplied to the clamping electrode 254 by a power supply 255 controlled by the controller 220. Application of a DC voltage to the clamping electrode 254 creates a capacitive coupling between the substrate support 205 and the substrate 206. This capacitive coupling attracts the substrate 206 towards the substrate support 205.

[0088] As an example, one of the RF generators 212, 214, and 216 may be a bias RF power source and provide a bias voltage to a corresponding one or more of the RF electrodes 230, 232, 234, 236, and 238. Each of the RF generators 212, 214, and 216 may be connected to one or more electrodes to supply a bias voltage. Although five electrodes are shown in FIG. 2, a different number of electrodes may be included. One example in which each RF generator supplies a bias voltage to multiple electrodes is shown and described with respect to FIG. 26. An RF generator and matching network pair (or RF source) may supply an RF signal to a different set of electrodes than other RF generator and matching network pairs. In another embodiment, a first RF generator and matching network pair supplies a first RF signal to a first electrode or electrodes, and a second RF generator and matching network pair supplies a second RF signal to the same electrode or electrodes. In one embodiment, the substrate support 205 has as many RF generator and matching network pairs (or RF sources) as there are sets of electrodes, with each set of electrodes including one or more electrodes. In another embodiment, there are a different amount (more or fewer) of RF generator and matching network pairs (or RF sources) than there are sets of electrodes. The controller 220 can control which and how many electrodes each RF generator and matching network pair powers. This can be achieved using switching networks included between the matching networks and the electrodes.

[0089] As an example, the switching network may be included in the matching, tuning, and distribution network 442 of Figure 4. The RF generators may operate at different frequencies and / or implement different pulse schemes with different pulse times and / or patterns in generating the RF signals, which may be controlled by the controller 220, which may select the RF frequency and / or pulse pattern for each of the generated RF signals.

[0090] The electrodes 230, 232, 234, 236, and 238 may be disposed within a cavity not shown in FIG. 2 but shown, for example, in FIGS. 5, 12, 14, 17, and 27. A plane 239 may extend laterally through the RF electrodes 230, 232, 234, 236, and 238. In one embodiment, the RF electrode 234 receives a bias RF voltage from a second matching network 208. The matching networks 207, 208, and 210 match the impedance (e.g., 50 Ω) of the generators 212, 214, and 216 to the impedance of the substrate support 205 and plasma 260 within the processing chamber 204 as seen by the matching networks 207, 208, and 210. The electrodes 230, 232, 234, 236, and 238 may be encased in a dielectric material referred to as covers 262, 264, 266, 268, and 270. In another embodiment, the electrodes 230, 232, 234, 236, 238 are not encased in a dielectric material. The controller 220 may control the voltage and / or current output of the RF generators 212, 214, 216, as well as the parameter settings of the matching networks 207, 208, 210 (e.g., the impedance of the circuit elements).

[0091] In operation, an ionizable gas flows into the process chamber 204 through the gas inlet 271 and exits the process chamber 204 through the gas outlet 272. A first RF signal is generated by the RF power supply 248 and sent to the TCP reactor coil 240. The first RF signal radiates from the TCP reactor coil 240 through the dielectric window 244 into the process chamber 204. This ionizes the gas in the process chamber 204, forming a plasma 260. The plasma 260 generates a plasma sheath 274 along the walls of the process chamber 204. The plasma 260 contains electrons and positively charged ions. Electrons are much lighter than positively charged ions and therefore tend to move more easily, generating a DC bias voltage and a DC sheath potential on the interior surfaces of the process chamber 204. The average DC bias voltage and DC sheath potential at the substrate 206 affect the energy with which positively charged ions impact the substrate 206. This energy affects process characteristics, such as the rate at which etching or deposition occurs.

[0092] The controller 220 may, for example, adjust the bias RF signal generated by the second RF generator 214 to vary the amount of DC bias and / or the DC sheath potential at the substrate 206. The bias RF voltage may be supplied to an electrode other than the RF electrode 234. The controller 220 may also adjust the RF voltage supplied to the RF electrodes 230, 232, 234, 236, and 238 to control the plasma density distribution profile above the substrate 206, thereby controlling the etch rate uniformity across the substrate. Controlling the RF voltage may also adjust the ion incidence angle, as described further below. In one embodiment, the controller 220 controls and provides the RF signal through the matching networks 207, 208, and 210 during start-up of the RF generators 212, 214, and 216. This may be done to improve etch rate uniformity during the initial transient period that occurs during start-up, as described further below.

[0093] In one embodiment, the controller 220 controls the power and / or current supplied to each of the coils 240 as a coarse adjustment. The radius of the coils 240 and / or the position of the coils 240 may also or alternatively be adjusted. Exemplary radii Ri and Ro are illustrated for the inner coil set 280 and the outer coil set 282, and refer to the inner radius of the innermost winding of the coils 240. The inner coil set 280 may include one or more coils, and the outer coil set 282 may include one or more coils. The distance between the coil sets and the coils of each coil set may also be adjusted. The controller 220 also controls the RF signals supplied to the RF electrodes 230, 232, 234, 236, and 238 as a fine adjustment. This may be done to meet stringent requirements for ion incidence angle and / or etch rate uniformity. In one embodiment, the inner coil set 280 is positioned vertically opposite one or more RF electrodes of the substrate support 205, and the outer coil set 282 is positioned vertically opposite one or more other RF electrodes of the substrate support 205. The coils may be positioned vertically opposite an RF electrode, for example, when the inner radius of the coil, measured from a centerline (e.g., centerline 290) of the processing chamber 204, is the same as the radial distance between the centerline and the RF electrode. A sample radial distance Re between the RF electrode 236 and the centerline 290 is shown.

[0094] 3 shows a second portion 300 of a substrate processing system, including a gas delivery system 302 for a gas injector 304. The TCP reactor coil 240 is disposed in a channel of the plenum 242 and receives an RF signal from a power source 248 via a TCCT matching network 250.

[0095] The gas delivery system 302 includes the controller 220 and a gas delivery assembly 330 including one or more gas sources 332-1, 332-2, ..., and 332-N (collectively, gas sources 332), where N is an integer greater than zero. The gas sources 332 supply one or more gases (e.g., etching gases, carrier gases, purge gases, etc.) and mixtures thereof. The gas sources 332 may also supply purge gases. The gas sources 332 are connected to a manifold 340 by valves 334-1, 334-2, ..., and 334-N (collectively, valves 334) and mass flow controllers 336-1, 336-2, ..., and 336-N (collectively, mass flow controllers 336). The output of the manifold 340 is routed to the processing chamber 204 of FIG. 1 . By way of example only, the output of the injector 304 of the manifold 340 may be connected to the manifold 340. The controller 220 may control the operation of the valves 334 and mass flow controllers 336 .

[0096] In one embodiment, the set of sources is configured to (i) supply compressed dry air to one or more central sections of plenum 242, and (ii) supply atmospheric pressure air to one or more intermediate sections and / or one or more outer sections of plenum 242. In one embodiment, the air provided to the one or more intermediate sections and / or one or more outer sections is amplified air provided via one or more air amplifiers. One or more of the mass flow controllers may include an air amplifier. The air amplifier increases the amount of air supplied within a period of time.

[0097] FIG. 4 illustrates a portion of another substrate processing system 400 that includes a plasma density profile control system 402. The substrate processing system 400 includes a process chamber 403 that includes a substrate support 404 that supports a substrate 406. The plasma density profile control system 402 includes the substrate support 404, an RF generation system 407, a power supply 408, and a controller 410. The plasma density profile control system 402 controls the plasma density distribution profile over and above the substrate 406 by controlling an RF signal sent to an RF electrode 412 provided on the substrate support 404. The example of FIG. 4 is provided to illustrate another exemplary substrate support. Although not shown in FIG. 4, a plenum, a dielectric window, and a coil may also be included, as shown in FIG. 2.

[0098] The substrate support 404 includes a top plate 420, a base plate 422, and an intermediate bonding layer 424. The top plate 420 may be formed from a non-conductive material, such as ceramic, and may include one or more clamp electrodes 426 and an RF electrode 412. Any number of clamp electrodes and RF electrodes may be included. The base plate 422 may be formed from a conductive material, such as aluminum, and may include a coolant channel 428. A coolant may be supplied to the coolant channel 428 via a coolant assembly 430, which may be controlled by the controller 410 based on signals from temperature sensors 432, 434. The temperature sensor 432 may be located within the substrate support 404. The temperature sensor 434 may be located within the processing chamber 403.

[0099] The RF generation system 407 includes an RF generator 440 and a matching, tuning, and distribution network 442, which may operate similarly to the RF generators 212, 214, and 216 and matching networks 207, 208, and 210 of FIG. 2 . The RF generator 440 may receive power from a power source 408 and be controlled by a controller 410. The system may include any number of RF generators, matching, tuning, and distribution networks, and / or RF electrodes. Each RF generator and matching, tuning, and distribution network may be connected to any number of RF electrodes. The RF electrodes may be of different sizes and shapes and may be arranged in various predetermined patterns.

[0100] The inner coil, outer coil, RF electrode, and bias electrode referred to herein may be supplied with RF signals of the same or different voltages and / or the same or different frequencies. For example, the RF and bias signals supplied to the RF and bias electrodes may be signals between 100 kilohertz (kHz) and 100 megahertz (MHz). The RF signals supplied to the inner and outer coils may be signals between 1 and 13 MHz. In one embodiment, the RF signals supplied to the RF and bias electrodes are the same frequency. In another embodiment, the RF signals supplied to the RF and bias electrodes are different frequencies. The RF signals supplied to the RF electrodes may be the same frequency but may be different from the frequency of the RF signals supplied to the bias (or bias RF) electrodes.

[0101] FIG. 5 shows a portion 500 of a substrate support including an RF circuit with multiple RF sections. The portion 500 includes a base plate 502 supporting a substrate 504 and having one or more edge rings 506. The base plate 502 may be referred to as a cathode and includes a first RF electrode 510 and a second RF electrode 512, which may be disposed within cavities 514, 516. The cavities 514, 516 may be filled with air (or a dielectric) and / or a dielectric material. The dielectric material may be referred to as a cover for the electrodes 510, 512. If the cavities 514, 516 are filled with air, the electrodes 510, 512 may be separated from the base plate 502 by the dielectric material. The electrodes 510, 512 are connected to respective matching networks 518, 520. The electrodes 510, 512 provide respective RF sections. Each of the RF electrodes 510, 512 may be provided with a different RF voltage, e.g., Vb1 and Vb2 for each of the two sections. RF electrode 510 provides a radially inner RF section based on Vb1. RF electrode 512 provides a radially outermost RF section based on Vb2.

[0102] 6 shows a schematic diagram of the RF circuit of portion 500 of FIG. 5. The RF circuit has a respective RF voltage V AC1 , V AC2 The two RF sources 600, 602 have an RF voltage V AC1 and V AC2 are supplied to the substrate 604, as are RF electrodes 510, 512, which supply respective voltages to the substrate 504. The two RF sources 600, 602 may be connected to a ground reference 606.

[0103] FIG. 7 shows plots of ion flux and plasma density versus substrate radius for a substrate support without RF electrodes. Curve 700 is ion flux versus substrate radius. Curve 702 is plasma density versus substrate radius. For a substrate support without RF electrodes, the flux is typically higher near the center of the substrate and lower near the outer radial edge of the substrate. The ion non-uniformity for the example of FIG. 7 is 32%, which can be estimated using Equation 1 above and the maximum ion flux at 0 centimeters (cm) and the minimum ion flux at 15 cm. For plasma density, as shown, the reverse is true. The plasma density curve is typically a mirror image of the ion flux curve. This is also true for other ion flux plots mentioned herein where plasma density curves are not shown.

[0104] In the example of FIG. 5, RF electrodes are provided below the substrate. The RF electrodes may be supplied with RF voltages such that the electrode with the higher Vb is under the high plasma density region and the electrode with the lower Vb is under the low plasma density region. The electrode with the higher Vb has a higher potential, which moves some of the plasma from the high density region to the low density region above the RF section with the lower Vb. This results in a more uniform plasma density distribution across the substrate. This is further illustrated by the exemplary plot of FIG. 8, where the radially inner region provided by RF electrode 510 receives a higher Vb (e.g., 180 V) than RF electrode 512, which receives a lower Vb (e.g., 90 V).

[0105] Instead of improving plasma density uniformity, the plasma density non-uniformity may worsen, resulting in increased flux (or more center-heavy) near the center of the substrate. This is the case when a higher Vb RF electrode is placed under a region of low plasma density and low flux. In such an arrangement, the higher Vb RF electrode moves some of the plasma from the low plasma density region to the higher plasma density region, resulting in a more center-heavy plasma distribution profile. For example, uniformity worsens when the radially inner region provided by RF electrode 510 receives a lower RF voltage (e.g., 90 V) than the radially outer region, which receives a higher RF voltage (e.g., 180 V) provided by RF electrode 512. This is shown in FIG. 9.

[0106] Providing a higher Vb to one RF electrode than to another can cause problems. Different regions of the substrate may correspond to different ion energies, resulting in different etch rates. Figures 10A and 10B show exemplary plots of energy versus ion spread angle for two RF zones in which the radially inner zone receives a higher RF voltage than the radially outer zone. Figures 11A and 11B show exemplary plots of energy versus ion spread angle for two RF zones in which the radially outer zone receives a higher RF voltage than the radially inner zone. In Figures 10A-11B, theta (θ) refers to the ion spread angle across the substrate and is equal to the arctangent of the square root of the ion temperature Ti relative to the sheath voltage Vs, as expressed in Equation 2.

number

[0107] FIG. 12 shows an example of a portion 1200 of a substrate support including an RF circuit with multiple RF sections, including a bias RF section. The portion 1200 includes a base plate 1202 supporting a substrate 1204 and having one or more edge rings 1206. The base plate 1202 may be referred to as a cathode and includes a first RF electrode 1210 and a second RF electrode 1212, which may be disposed within cavities 1214, 1216. The cavities 1214, 1216 may be filled with air and / or a dielectric material. If the cavities 1214, 1216 are filled with air, the electrodes 1210, 1212 may be separated from the base plate 1202 by a dielectric material. The dielectric material may encapsulate the electrodes 1210, 1212 and is referred to as a cover. The electrodes 1210, 1212 are connected to respective matching networks 1218, 1220. Each of the RF electrodes 1210, 1212 may be provided with a different RF voltage, for example, Vb1 and Vb2. The base plate 1202 may also operate as an RF electrode and receive an RF voltage from a third RF matching network 1222. The electrodes 1210, 1212 and the base plate 1202 provide corresponding RF fields.

[0108] 13 shows an RF circuit schematic for portion 1200 of the substrate support of FIG. 12. The RF circuits are connected to respective RF voltages V AC1 , V AC2 , and V AC3(Bias) The RF power supply 1300 includes three RF sources 1300, 1302, and 1304 having RF voltages V AC3(Bias) may be referred to as bias RF voltages. RF sources 1300, 1302, and 1304 are connected to substrate 1204 to provide respective RF voltages to substrate 1204. RF sources 1300, 1302, and 1304 may be connected to a ground reference 1306. This arrangement of Figure 12 has similar challenges to the arrangement of Figure 5 in that different regions of substrate 1204 may correspond to different ion energies, resulting in different associated etch rates.

[0109] To improve etch rate uniformity and plasma uniformity and minimize ion tilt angle, (i) the radii of the inner and outer coils, such as the radius of coil 240 in FIG. 2, may be changed; (ii) the power and / or current supplied to the inner and outer coils may be adjusted; (iii) the RF voltage supplied to the RF electrode may be adjusted; and (iv) one or more dielectric layers and / or dielectric separators may be provided above the RF electrode to control the voltage potential supplied to the substrate. This may be done to maintain similar ion energy across the substrate and uniformity of plasma density distribution across the substrate. Examples of the aforementioned ion energies are shown in FIGS. 20A-21B. The dielectric layer and / or dielectric separator is provided between the RF electrode and the substrate. The dielectric layer and / or dielectric separator may be integrated within and / or provided on the substrate support. These adjustments and inclusions, as described, improve etch rate uniformity by ensuring that ions across the substrate experience similar energy. Examples including dielectric layers and / or separators are shown in FIGS.

[0110] 14 shows an example of a portion 1400 of a substrate support including an RF circuit having multiple RF sections, including bias RF sections and a dielectric layer. The portion 1400 includes a base plate 1402 that supports a substrate 1404 and has one or more edge rings 1406. The base plate 1402 may be referred to as a cathode and includes a first RF electrode 1410 and a second RF electrode 1412, which may be disposed within cavities 1414, 1416. The cavities 1414, 1416 may be filled with air and / or a dielectric material to enclose the electrodes 1410, 1412. When the cavities 1414, 1416 are filled with air, the electrodes 1410, 1412 may be separated from the base plate 1402 by a dielectric material. The dielectric material may be referred to as a cover for the electrodes 1410, 1412.

[0111] The electrodes 1410, 1412 are connected to respective matching networks 1418, 1420. Each of the RF electrodes 1410, 1412 may be provided with a different RF voltage, for example, Vb1 and Vb2. The base plate 1402 may also operate as an RF electrode and may receive an RF voltage from a third RF matching network 1422. The electrodes 1410, 1412 and the base plate 1402 provide corresponding RF zones (e.g., three RF zones).

[0112] The base plate 1402 also includes a dielectric layer 1430. The dielectric layer 1430 may include multiple dielectric separators (dielectric separators 1432 and 1434 are shown). A dielectric separator may refer to at least a portion of a layer of dielectric material disposed between the RF electrode and the substrate. In one embodiment, the dielectric separator is implemented as a region of the dielectric layer that includes a dielectric (or non-conductive) material. Other regions of the dielectric layer may include a conductive material. For example, the region 1440 disposed between the dielectric separators 1432 and 1434 may be formed from a conductive material (e.g., aluminum). The base plate 1402 may include recessed regions (two recessed regions 1450 and 1452 are shown) across the top of the base plate where the dielectric separators are disposed. The dielectric separators 1432 and 1434 and the cover may be formed from the same material and have the same or similar impedances, or may be formed from different materials and have different impedances. This is also true for the dielectric separators and covers of the other embodiments disclosed herein. In one embodiment, dielectric separator 1432 is formed from a different dielectric material than dielectric separator 1434.

[0113] In one embodiment, the base plate 1402 is formed from a conductive material (e.g., aluminum). A portion of the conductive material may be provided between the dielectric separators 1432, 1434 and the cover (or dielectric cover). In the illustrated embodiment, the dielectric cover contacts the dielectric separators 1432, 1434, and no conductive material is provided between the dielectric cover and the dielectric separators 1432, 1434.

[0114] 15 shows an RF circuit schematic for the portion 1400 of the substrate support of FIG. 14. The RF circuits are connected to respective RF voltages V AC1 , V AC2 , and V AC3(Bias) 14 includes three RF sources 1500, 1502, 1504 having respective RF voltages. The RF sources 1500, 1502, 1504 are connected to the substrate 1404 to provide respective RF voltages. The RF sources 1500, 1502, 1504 may be connected to a ground reference 1506. The dielectric separators 1432, 1434 in FIG. 14 are represented by capacitors 1532, 1534 connected in series with the RF sources 1500 and 1502.

[0115] The dielectric separator 1432 and RF source 1500 act as a first voltage divider. The dielectric separator 1434 and RF source 1502 act as a second voltage divider. At power-up, the RF voltage seen by the substrate provided by the voltage divider and third RF source 1504 can vary depending on the voltages of the RF sources 1500, 1502, 1504 and the material of the dielectric separator.

[0116] Figure 16 shows an example plot of ion flux versus substrate radius for the substrate support of Figure 14. For the example plot of Figure 16, the plasma non-uniformity is 7%, but can be lower. For the example plot of Figure 16, the voltage of the first RF source 1500 is 600V and the voltage of the second RF source 1502 is 300V.

[0117] FIG. 17 shows an example of a portion of a substrate support that does not include a bias RF electrode and includes an RF circuit having multiple RF sections with a dielectric layer. The portion 1700 includes a base plate 1702 that supports a substrate 1704 and has one or more edge rings 1706. The base plate 1702 may be referred to as a cathode and includes a first RF electrode 1710 and a second RF electrode 1712, which may be disposed within cavities 1714, 1716. The cavities 1714, 1716 may be filled with air and / or a dielectric material to enclose the electrodes 1710, 1712. If the cavities 1714, 1716 are filled with air, the electrodes 1710, 1712 may be separated from the base plate 1702 by a dielectric material. The dielectric material may be referred to as a cover. The electrodes 1710, 1712 are connected to respective matching networks 1718, 1720. Each of the RF electrodes 1710, 1712 may be provided with a different RF voltage, such as Vb1 and Vb2. In this example, the base plate 1702 is not directly provided with an RF voltage, such as an RF bias voltage. The electrodes 1710, 1712 provide corresponding RF zones (e.g., two RF zones). The base plate 1702 also includes a dielectric layer 1730 that covers the top surface of the base plate 1702. The dielectric layer 1730 is formed of a non-conductive material, which may be the same as or different from the material of the cover.

[0118] 18 shows an RF circuit schematic of a portion of the substrate support of FIG. 17. The RF circuitry is connected to respective RF voltages V AC1 , V AC217. Initially upon power-up, the dielectric layer 1730 of FIG. 17 is nearly shorted and over time becomes part of an open circuit. As a result, initially, an equivalent RF circuit representation may include capacitors 1806 and 1808, but over time may include capacitor 1810 rather than capacitors 1806 and 1808. Thus, initially, two different RF voltages are provided to the substrate 1704 through multiple regions of the dielectric layer 1730 (represented by capacitors 1806 and 1808), and over time, and as this arrangement approaches a steady state, a single RF voltage is provided through the dielectric layer 1730 (represented by capacitor 1810). The RF sources 1800 and 1802 are connected to a ground reference 1812.

[0119] Capacitors 1806, 1808 and RF sources 1800, 1802 initially operate as two voltage dividers. Over time, capacitor 1810 and the parallel-connected RF sources 1800, 1802 operate as a single voltage divider. At power-up, the RF voltages provided by the two voltage dividers as seen by the substrate may be different. This applies for 200-900 milliseconds and / or until steady state conditions are established at the substrate. Setting and providing different voltages during this initial period controls the corresponding plasma density profile, improving ion tilt angles during this initial period and improving etch rate uniformity across the substrate. Similar differences in voltage may also be seen during the initial transient period of other embodiments disclosed herein. This difference in voltage may be provided by RF electrodes and / or bias RF electrodes.

[0120] Figure 19 shows an example plot of ion flux versus substrate radius for the substrate support of Figure 17. For the example plot of Figure 19, the plasma non-uniformity is 6%, but can be lower. For the example plot of Figure 19, the voltage of the first RF source 1800 is 600V and the voltage of the second RF source 1802 is 300V.

[0121] As the examples of Figures 14 and 17 show, by providing two or three RF zones and one or more dielectric layers and / or separators, ions can have similar potentials across the wafer, as shown in Figures 20A-21B. Figures 20A and 20B correspond to the arrangement of Figure 14. Figures 21A and 21B correspond to the arrangement of Figure 17. Figures 20A and 20B show plots of energy versus ion spread angle for two RF zones provided by RF electrodes 1410, 1412 of the substrate support of Figure 14. Figures 21A and 21B show plots of energy versus ion spread angle for two RF zones provided by RF electrodes 1710, 1712 of the substrate support of Figure 17. 14 and 17, in combination with adjusting the radii of the inner and outer coils (e.g., coil 240 of FIG. 2) and / or adjusting the power, voltage, and / or current supplied to coil 240, improves the plasma density profile uniformity and, consequently, improves the etch rate uniformity across the substrate. As an example, the amount of current supplied to the outer coil may be twice the amount of current supplied to the inner coil, resulting in a TCCT ratio of 0.5.

[0122] Figure 22 shows a feature 2200 on a substrate 2202, illustrating normal ion incidence and aspect ratio parameters. The feature has a width A and a depth D. The aspect ratio is equal to the depth D divided by the width A. The angle of incidence is 0°, so that the direction of the ions (represented by vectors 2204) impacting the substrate is perpendicular to the surface of the substrate 2202.

[0123] FIG. 23 shows a feature 2300 on a substrate 2302 created with an acute ion incidence angle, represented by vector 2304. If this occurs, continued etching at this acute ion incidence angle may be required. Continuing etching at this angle may require a plasma shift. This acute ion incidence angle can be provided by utilizing the arrangements of FIGS. 14 and 17 and applying a high RF voltage to the central (or first) RF section and a low RF voltage to the outer (or second) RF section. The outer section may refer to the area near the periphery of the substrate. Furthermore, the corresponding outer coil set (e.g., outer coil set 282 in FIG. 2) receives more power than the corresponding inner coil set (e.g., inner coil set 280 in FIG. 2). This provides an edge-heavy plasma with equal ion energy across the substrate. The ion energies are shown in FIGS. 24A and 24B. 2A and 24B show exemplary plots of energy versus ion spread angle for two RF sections provided by the substrate support of FIG. 17, where the center potential is significantly higher than the edge potential.

[0124] Figure 25 shows an example plot of ion flux versus substrate radius for the substrate support of Figure 17, where the center potential is significantly higher than the edge potential. In the example shown, the radially inner zone receives 900V and the radially outer zone receives 180V, with an edge-heavy plasma having a TCCT ratio of 0.5 and a plasma density non-uniformity of 24% across the top surface of the substrate.

[0125] 26 shows a top view of a base plate 2600 of a substrate support. In the illustrated example, three rings 2601, 2602, 2604 of RF electrodes 2606, 2608, 2610 are shown, but these may be embedded in the base plate 2600. Any number of rings of RF electrodes may be included, and each ring may have any number of RF electrodes. An exemplary pattern of RF electrodes is shown. Other patterns may be implemented. Each of the rings 2601, 2602, 2604 may refer to a specific RF zone and / or may include multiple different RF zones. The RF electrodes 2606, 2608, 2610 may be independently supplied with respective RF voltages. In one embodiment, the RF electrodes in each of the rings 2601, 2602, 2604 receive the same RF voltage, and the RF electrodes in different ones of the rings 2601, 2602, 2604 receive different RF voltages. Although the RF electrodes 2606, 2608, 2610 are shown arranged in a ring, the RF electrodes 2606, 2608, 2610 may be arranged in other configurations and each may have a different size and / or shape than shown. The RF electrodes may have the same size and shape as shown, or may have different sizes and shapes.

[0126] In one embodiment, each of the rings 2601, 2602, 2604 corresponds to one of the RF sections in the example of FIG. 14 . For example, the first of the rings 2601, 2602, 2604 provides a first RF section, the second of the rings 2601, 2602, 2604 provides a second RF section, and the third of the rings 2601, 2602, 2604 provides a third RF section. In one embodiment, the third RF section receives a bias RF voltage provided by the center ring 2602, where the bias RF voltage is provided to the RF electrode 2608 but not to the base plate of the substrate support. In another embodiment, the bias RF voltage is provided to the RF electrode of the radially innermost ring 2604 or the RF electrode of the radially outermost ring 2601. In one embodiment, the RF electrodes of the rings are encased in a dielectric material (or cover) and surrounded by a conductive material, as described above.

[0127] The RF electrodes 2606, 2608, 2610 may each have a respective dielectric separator 2620, 2622, 2624. The dielectric separators 2620, 2622, 2624 may be non-conductive "islands" separated and / or surrounded by conductive material and disposed above the RF electrodes 2606, 2608, 2610, or may be the upper portions of a dielectric cover encasing the RF electrodes 2606, 2608, 2610. In some embodiments, the dielectric separators 2620, 2622, 2624 may contact the substrate when the substrate is disposed on the substrate support. In other embodiments, the substrate support and / or base plate may include a layer of conductive or non-conductive material disposed between the dielectric separator and the substrate.

[0128] In yet another embodiment, a single dielectric layer replaces the dielectric separators 2620, 2622, 2624 and covers the base plate 2600 of the corresponding substrate support. In yet another embodiment, a single uniform dielectric layer covers all of the RF electrodes 2606, 2608, 2610 and is provided between the RF electrodes 2606, 2608, 2610 and the substrate. The dielectric layer may be a top layer of the base plate and / or substrate support, or an intermediate layer of the base plate and / or substrate support.

[0129] In another embodiment, one or more of the RF electrodes 2606, 2608, 2610 and / or the rings of RF electrodes 2601, 2602, 2604 are configured to operate as a heating element in addition to providing RF voltage to the substrate. For example, the RF electrode of one of the rings 2601, 2602, 2604 (e.g., the outer ring 2601) is supplied with not only high-frequency RF current but also low-frequency current, operating as both a heating element and an RF source. As an example, the power supply 255 of FIG. 2 may supply low-frequency current to an RF electrode operating as a heating element. The RF electrode may receive low-frequency power while receiving a high-frequency RF signal. The controller 220 of FIG. 2 may adjust the current to the heating element based on, for example, a temperature signal from a temperature sensor (e.g., temperature sensors 432, 434 of FIG. 4).

[0130] 27 shows an example of a portion 2700 of a substrate support including multiple layers 2702, 2704 of RF electrodes for multiple RF zones. The substrate support includes a base plate 2710 including RF electrodes 2712, 2714, 2716 disposed on the layers 2702, 2704, and one or more edge rings 2718. The layers 2702, 2704 may include any number of RF electrodes in various patterns. The RF electrode 2716 may be disposed below one or more of the RF electrodes 2712, 2714, or may be horizontally offset such that it is on a layer below the RF electrodes 2712, 2714 rather than directly below them.

[0131] The RF electrodes 2712, 2714, 2716 are disposed in cavities 2720, 2722, 2724 and may be surrounded by air and / or encased in a dielectric material (called a cover). If the cavities 2720, 2722, 2724 are filled with air, the electrodes 2712, 2714, 2716 may be separated from the base plate 2710 by the dielectric material. The dielectric material may be disposed between and separate the cavities 2720, 2722, 2724. In another embodiment, the RF electrodes 2712, 2714, 2716 are not encased in a dielectric material. The substrate 2730 is disposed on a substrate support above the RF electrodes 2712, 2714, 2716. The RF electrodes 2712 , 2714 , 2716 receive RF voltage through matching networks 2732 , 2734 , 2736 .

[0132] Although the RF electrode examples of Figures 14, 17, 26, and 27 are shown as being mounted in the base plate of the substrate support, the RF electrode may also be mounted in the top plate of the substrate support (e.g., top plate 420 of Figure 4).

[0133] The examples disclosed herein enable control of the plasma density distribution profile across the substrate. The inner and outer coil parameters, RF electrode parameters, and / or dielectric separator parameters can be adjusted to (i) provide a more uniform plasma density distribution across the substrate, or (ii) provide a center-heavy or radially outer edge-heavy plasma density (or ion flux above the substrate) distribution profile. A center-heavy distribution is when the plasma density near the central region of the substrate is higher than the radially outer edge of the substrate. A radially outer edge-heavy distribution is when the plasma density near the radially outer edge of the substrate is higher than the central region of the substrate.

[0134] The inner and outer coil parameters may include the radii of the inner and outer coils, the positions of the inner and outer coils relative to a reference point in the processing chamber and / or relative to each other, the power, voltage, and / or current supplied to the inner and outer coils, etc. The RF electrode parameters may include the power, voltage, and / or current supplied to the RF electrodes, the size and shape of the RF electrodes, the number of RF electrodes per RF section, the number of RF sections on the RF electrodes, the positions of the RF electrodes, etc. The dielectric separator parameters may include the size and shape of the dielectric separators, the number of dielectric separators, the material of the dielectric separators, the positions of the dielectric separators, etc.

[0135] FIG. 28 illustrates a method for adjusting etch rate uniformity. This method is applicable to the systems of FIGS. 2-4, the embodiments of FIGS. 5, 12, 14, 17, 26, and 27, and other embodiments disclosed herein. At least some of the following operations may be performed and repeated by the controller 220 of FIG. 2. The method may begin at 2800. In 2802, the controller 220 may determine a recipe and operational parameters. In 2804, a substrate is provided on a substrate support (e.g., one of the substrate supports described above). In 2806, process gases are supplied to the processing chamber according to a recipe, and a plasma is generated.

[0136] In 2808, the controller 220 may (i) determine a current level specified by the determined recipe and supply a corresponding amount of current to the inner and outer coils 240, and (ii) determine an RF voltage level specified by the determined recipe and supply the determined RF voltage to the RF electrode of the substrate support. In 2810, the controller 220 etches the substrate for a predetermined time.

[0137] At 2812, a metrology process may be performed to determine the etch rate across the substrate. This may include evacuating the processing chamber, removing the substrate, and measuring features on the substrate. Etch depth and / or feature dimensions across the substrate may be measured and recorded for comparison with other previously measured dimensions of the substrate.

[0138] In 2813, the controller 220 may determine whether the etch rate uniformity has improved. The controller 220 may compare the current etch depth and / or feature dimension across the substrate to the dimensions of the substrate before performing operation 2810 to determine the current etch rate uniformity. This etch rate uniformity may be compared to a previous etch rate uniformity to determine whether the etch rate uniformity has improved. Operation 2813 may be skipped in the first iteration of this method. The controller 220 may compare the current etch rate uniformity (or etch rate non-uniformity) to a previous etch rate uniformity (or etch rate non-uniformity) from a previous iteration of this method. If the etch rate uniformity has improved, operation 2814 may be performed; otherwise, operation 2820 may be performed.

[0139] In 2814, the controller 220 may determine whether the etch rate non-uniformity is below a predetermined threshold. If yes, operation 2822 may be performed, and the values ​​of the current level and RF voltage may be stored in the memory of the controller 220 as updated values ​​for the determined recipe or as values ​​for another recipe. If the predetermined threshold is not met, operation 2816 may be performed.

[0140] In 2816, the controller 220 may adjust one or more of the current levels in the inner and outer coils 240, adjust the power supplied to one or more of the coils 240, and return to operation 2804. The ion density is proportional to the power supplied to the coils 240, which is related to the level of plasma density. Operations 2804, 2806, 2808, 2810, and 2812 may then be performed on another substrate. In one embodiment, operations 2804, 2806, 2808, 2810, and 2812 are repeated for the same substrate.

[0141] In 2820, the controller 220 may adjust the RF voltage of the RF electrodes and then return to operation 2804. The higher the applied RF voltage, the higher the energy of the ions and the associated higher etch rate. The etch rate is proportional to the square root of the ion energy. Operations 2804, 2806, 2808, 2810, and 2812 may then be performed on another substrate. In one embodiment, operations 2804, 2806, 2808, 2810, and 2812 are repeated on the same substrate.

[0142] Although operations 2816 and 2820 are described above as adjusting certain parameters, other parameters may be adjusted, including any of the inner and outer coil parameters, RF electrode parameters, and dielectric separator parameters described above. The processing system may be modified based on the adjusted parameters, and the above operations may be repeated to evaluate the updated configuration.

[0143] The above operations are illustrative examples. Operations may occur sequentially, synchronously, simultaneously, consecutively, during overlapping time periods, or in a different order, depending on the application. Also, some operations may not occur or may be skipped, depending on the implementation and / or order of events.

[0144] The foregoing description is merely illustrative in nature and is not intended to limit the disclosure, its application, or uses. The broad teachings of the present disclosure can be embodied in a variety of forms. Accordingly, while the present disclosure includes specific examples, other modifications will become apparent upon review of the drawings, the specification, and the following claims, and such limitations should not be construed to limit the true scope of the present disclosure. It should be understood that one or more steps within a method may be performed in a different order (or simultaneously) without altering the principles of the present disclosure. Furthermore, although each embodiment is described above as having specific features, any one or more of those features described with respect to any embodiment of the present disclosure can be implemented and / or combined with the features of any other embodiment, even if that combination is not explicitly stated. In other words, the described embodiments are not mutually exclusive, and substituting one or more embodiments for one another remains within the scope of the present disclosure.

[0145] Spatial and functional relationships between elements (e.g., between modules, circuit elements, semiconductor layers, etc.) are described using various terms such as "connected," "engaged," "coupled," "adjacent," "next to," "on top of," "above," "below," and "provided on." Unless expressly described as "direct," when a relationship between first and second elements is described in the above disclosure, the relationship may be a direct relationship where no other intervening elements exist between the first and second elements, or an indirect relationship where one or more intervening elements (spatially or functionally) exist between the first and second elements. As used herein, the phrase "at least one of A, B, and C" should be interpreted to mean the logic (A or B or C) using a non-exclusive logical OR, and not to mean "at least one of A, at least one of B, and at least one of C."

[0146] In some implementations, the controller is part of a system that may be part of the examples described above. Such systems may include semiconductor processing equipment, such as one or more processing tools, one or more chambers, one or more processing platforms, and / or specific processing components (wafer pedestals, gas flow systems, etc.). These systems may be integrated with electronics for controlling the operation of the system before, during, and after processing of semiconductor wafers or substrates. This electronics may be referred to as a "controller," which may control various components or subcomponents of one or more systems. Depending on the processing requirements and / or type of system, the controller may be programmed to control any of the processes disclosed herein, such as delivery of process gases, temperature settings (e.g., heating and / or cooling), pressure settings, vacuum settings, power settings, radio frequency (RF) generator settings, RF matching circuit settings, frequency settings, flow rate settings, fluid supply settings, position and operation settings, and wafer loading and unloading from the tool and other transfer tools and / or load locks connected or interfaced to the particular system.

[0147] Broadly speaking, a controller may be defined as electronic equipment having various integrated circuits, logic, memory, and / or software that, for example, receive instructions, issue instructions, control operations, enable cleaning operations, enable endpoint metrology, etc. Integrated circuits may include chips in the form of firmware that store program instructions, digital signal processors (DSPs), chips defined as application-specific integrated circuits (ASICs), and / or one or more microprocessors or microcontrollers (e.g., software) that execute the program instructions. Program instructions may be instructions communicated to the controller in the form of various personalizations (or program files) that define operational parameters for performing a particular process on or for a semiconductor wafer or for a system. The operational parameters, in some embodiments, may be part of a recipe defined by a process engineer to accomplish one or more processing steps during the fabrication of one or more layers, materials, metals, oxides, silicon, silicon dioxide, surfaces, circuits, and / or dies of a wafer.

[0148] In some implementations, the controller may be part of or connected to a computer that is integrated into the system, connected to the system, or otherwise networked to the system, or a combination thereof. For example, the controller may be all or part of a host computer system in the “cloud” or in a fab that enables remote access to wafer processing. By enabling remote access to the system, the computer can monitor the current progress of assembly operations, review the history of past assembly operations, and review trends or performance criteria from multiple assembly operations to modify parameters of a current process, set processing steps following a current process, or initiate a new process. In some examples, a remote computer (e.g., a server) can provide process recipes to the system over a network, which may include a local network or the Internet. The remote computer may include a user interface that enables input or programming of parameters and / or settings, which are then communicated to the system from the remote computer. In some examples, the controller receives instructions in the form of data defining parameters for each processing step performed during one or more operations. It should be understood that the parameters may be specific to the type of process being performed or the type of tool the controller is configured to interface with or control. Thus, as described above, the controller may be distributed, such as by including one or more separate controllers networked together and working toward a common purpose, such as the processes and controls described herein. An example of a distributed controller for such a purpose includes one or more integrated circuits on the chamber that communicate with one or more remotely located integrated circuits (e.g., at the platform level or as part of a remote computer) combined to control the processes on the chamber.

[0149] Without limitation, exemplary systems may include a plasma etch chamber or module, a deposition chamber or module, a spin rinse chamber or module, a metal plating chamber or module, a clean chamber or module, a bevel edge etch chamber or module, a physical vapor deposition (PVD) chamber or module, a chemical vapor deposition (CVD) chamber or module, an atomic layer deposition (ALD) chamber or module, an atomic layer etch (ALE) chamber or module, an ion implantation chamber or module, a track chamber or module, and any other semiconductor processing system associated with or that may be used in the fabrication and / or manufacturing of semiconductor wafers.

[0150] As described above, depending on the process step or steps being performed by the tool, the controller may communicate with one or more of other tool circuits or modules, other tool components, cluster tools, other tool interfaces, adjacent tools, nearby tools, tools located throughout the factory, a main computer, other controllers, or tools used in material transport to move containers of wafers into and out of tool locations and / or load ports within a semiconductor fabrication factory. The present disclosure may be realized in the following forms. [Form 1] 1. A substrate processing system, comprising: a substrate support disposed within the processing chamber and configured to support a substrate on an upper surface of the substrate support; a base plate made of a conductive material; a substrate support including M electrodes (M is an integer of 2 or more) provided in the base plate; N radio frequency (RF) sources (N is an integer greater than or equal to 1) each configured to provide a respective RF signal to one or more of the M electrodes, each RF signal provided to a different set of the M electrodes, each set including a different one or more of the M electrodes; a controller configured to cause one or more coils to independently strike and maintain a plasma in the processing chamber from the N RF sources and to individually control the voltage outputs of the N RF sources to regulate the plasma in the processing chamber; A substrate processing system comprising: [Form 2] The substrate processing system according to aspect 1, wherein M is N or greater. [Form 3] The substrate processing system according to aspect 1, wherein N is M or more. [Form 4] The substrate processing system according to aspect 1, The controller selecting which one or more of the N RF sources will provide one or more of the respective RF signals to one of the M electrodes; or selecting, for each set of M electrodes, which one or more of the N RF sources will provide one or more of the respective RF signals to that set of M electrodes; a substrate processing system configured to perform at least one of the following: [Form 5] The substrate processing system according to aspect 4, wherein M is N or greater. [Form 6] The substrate processing system according to aspect 1, further comprising N cavities located on a top surface of the base plate; A substrate processing system, wherein the M electrodes are disposed within the N cavities. [Form 7] The substrate processing system according to aspect 6, The M electrodes are embedded in a dielectric material located within the N cavities. [Form 8] The substrate processing system according to aspect 1, N cavities located on the upper surface of the base plate and in which the M electrodes are arranged; one or more dielectric separators disposed between the M electrodes and the substrate; a substrate processing system further comprising: [Form 9] The substrate processing system according to aspect 1, The substrate processing system further includes a dielectric layer disposed between the M electrodes and the base plate. [Form 10] The substrate processing system according to aspect 1, A substrate processing system, wherein the frequencies of the N RF signals are the same as a frequency used to generate the plasma. [Form 11] The substrate processing system according to aspect 1, A substrate processing system, wherein the N RF signals have frequencies different from a frequency used to generate the plasma. [Form 12] The substrate processing system according to aspect 1, The processing chamber, the one or more coils include an inner coil and an outer coil; the inner coil is positioned outside the processing chamber adjacent a window of the processing chamber; the outer coil is disposed outside the processing chamber, adjacent the window, and spaced radially outward from the inner coil; an RF source configured to provide power to the inner coil and the outer coil; further comprising The substrate processing system, wherein the controller is further configured to control the RF source to adjust the current supplied to the inner coil relative to the current supplied to the outer coil. [Form 13] 13. The substrate processing system according to claim 12, The controller supplying more current to the outer coil than to the inner coil; or supplying a greater current to the inner coil than to the outer coil; a substrate processing system configured to control the RF source to do any of the following: [Form 14] The substrate processing system according to aspect 1, The substrate processing system further includes an RF source configured to provide a bias voltage to the baseplate. [Form 15] The substrate processing system according to aspect 1, A substrate processing system wherein at least one of the N RF signals has a different frequency than at least another one of the N RF signals. [Form 16] 2. The substrate processing system according to claim 1, wherein the N RF signals have the same frequency. [Form 17] The substrate processing system according to aspect 1, The substrate processing system further includes N matching networks disposed between the N RF sources and the M electrodes. [Form 18] 1. A substrate processing system, comprising: a processing chamber including a window; a substrate support disposed within the processing chamber and configured to support a substrate on an upper surface of the substrate support; A base plate and a substrate support including M electrodes (M is an integer of 2 or more) provided in the base plate; an inner coil positioned outside the processing chamber adjacent the window; an outer coil positioned outside the processing chamber adjacent the window and spaced radially outward from the inner coil; N radio frequency (RF) sources (N is an integer greater than or equal to 1) each configured to provide a respective RF signal to one or more of the M electrodes, each RF signal provided to a different set of the M electrodes, each set including a different one or more of the M electrodes; N matching networks disposed between the N RF sources and the M electrodes; a controller configured to strike a plasma by supplying RF power to the inner coil and the outer coil, and to vary a plasma density distribution profile within the processing chamber by (i) varying the power supplied to the inner coil relative to the outer coil, and (ii) varying the power supplied to at least one of the M electrodes relative to at least another one of the M electrodes; A substrate processing system comprising: [Form 19] 19. The substrate processing system according to aspect 18, wherein M is N or greater. [Form 20] 19. The substrate processing system according to claim 18, wherein N is M or more. [Form 21] 19. The substrate processing system according to claim 18, The controller selecting which one or more of the N RF sources will provide one or more of the respective RF signals to one of the M electrodes; or selecting, for each set of M electrodes, which one or more of the N RF sources will provide one or more of the respective RF signals to that set of M electrodes; a substrate processing system configured to perform at least one of the following: [Form 22] 22. The substrate processing system according to claim 21, wherein M is N or greater. [Form 23] 19. The substrate processing system according to claim 18, further comprising N cavities located on a top surface of the base plate; A substrate processing system, wherein the M electrodes are disposed within the N cavities. [Form 24] 24. The substrate processing system according to claim 23, The M electrodes are embedded in a dielectric material located within the N cavities. [Form 25] 19. The substrate processing system according to claim 18, N cavities located on the upper surface of the base plate and in which the M electrodes are arranged; one or more dielectric separators disposed between the M electrodes and the substrate; The substrate processing system further comprises: [Form 26] 19. The substrate processing system according to claim 18, The substrate processing system further includes a dielectric layer disposed between the M electrodes and the base plate. [Form 27] 19. The substrate processing system according to claim 18, A substrate processing system, wherein the frequencies of the N RF signals are the same as a frequency used to generate the plasma. [Form 28] 19. The substrate processing system according to claim 18, A substrate processing system, wherein the N RF signals have frequencies different from a frequency used to generate the plasma. [Form 29] 19. The substrate processing system according to claim 18, The substrate processing system further includes an RF source and a matching network connected between the inner coil and the outer coil. [Form 30] 19. The substrate processing system according to claim 18, The controller is configured to control the RF source to supply more current to the outer coil than to the inner coil. [Form 31] 19. The substrate processing system according to claim 18, The substrate processing system further includes an RF source configured to provide a bias voltage to the baseplate. [Form 32] 19. The substrate processing system according to claim 18, A substrate processing system wherein at least one of the N RF signals has a different frequency than at least another one of the N RF signals. [Form 33] 19. A substrate processing system according to claim 18, wherein the N RF signals have the same frequency. [Form 34] 19. The substrate processing system according to claim 18, the M electrodes include a first electrode and a second electrode; The controller a first amount of power is supplied to the inner coil and a second amount of power is supplied to the outer coil, such that the first amount of power is different from the second amount of power; and a first RF voltage is supplied to the first electrode and a second RF voltage is supplied to the second electrode, such that the first RF voltage is greater than the second RF voltage; configured to control the supply of the RF signal; Substrate processing system. [Form 35] 34. The substrate processing system according to claim 34, The first electrode is provided radially inward of the second electrode on the base plate and receives a higher RF voltage than the second electrode. [Form 36] 34. The substrate processing system according to claim 34, The first electrode is provided radially outward of the second electrode on the base plate and receives a higher RF voltage than the second electrode. [Form 37] 19. The substrate processing system according to claim 18, the M electrodes include a first set of electrodes and a second set of electrodes; the first set of electrodes corresponds to a first RF region; the second set of electrodes corresponds to a second RF region; the second RF region is located radially inward from the first RF region; Substrate processing system. [Form 38] 19. The substrate processing system according to claim 18, A substrate processing system, wherein the M electrodes are disposed in a plane that is parallel to and offset from a top surface of the substrate support. [Form 39] 19. The substrate processing system according to claim 18, The M electrodes are provided on different layers of the base plate. [Form 40] 19. The substrate processing system according to claim 18, The controller is configured to control the N RF signals to adjust the plasma to enhance plasma uniformity during a transient period during activation of the N RF sources. [Form 41] 19. The substrate processing system according to claim 18, A substrate processing system wherein one or more of the M electrodes also operate as heating elements. [Form 42] 1. A substrate processing system, comprising: a processing chamber including a window; a substrate support disposed within the processing chamber and configured to support a substrate on an upper surface of the substrate support; A base plate and a substrate support including: a dielectric layer disposed above the base plate and provided with M electrodes (M is an integer of 2 or more); an inner coil positioned outside the processing chamber adjacent the window; an outer coil positioned outside the processing chamber adjacent the window and spaced radially outward from the inner coil; N radio frequency (RF) sources (N is an integer greater than or equal to 1) each configured to provide a respective RF signal to one or more of the M electrodes, each RF signal provided to a different set of the M electrodes, each set including a different one or more of the M electrodes; N matching networks disposed between the N RF sources and the M electrodes; a controller configured to strike a plasma by supplying RF power to the inner coil and the outer coil, and to vary a plasma density distribution profile within the processing chamber by (i) varying the power supplied to the inner coil relative to the outer coil, and (ii) varying the power supplied to at least one of the M electrodes relative to the power supplied to at least another one of the M electrodes; A substrate processing system comprising: [Form 43] 43. The substrate processing system according to claim 42, wherein M is equal to or greater than N. [Form 44] 43. The substrate processing system according to claim 42, wherein N is greater than or equal to M. [Form 45] 43. The substrate processing system according to claim 42, The controller selecting which one or more of the N RF sources will provide one or more of the respective RF signals to one of the M electrodes; or selecting, for each set of M electrodes, which one or more of the N RF sources will provide one or more of the respective RF signals to that set of M electrodes; a substrate processing system configured to perform at least one of the following: [Form 46] 46. ​​The substrate processing system according to claim 45, wherein M is equal to or greater than N. [Form 47] 43. The substrate processing system according to claim 42, A substrate processing system, wherein the frequencies of the N RF signals are the same as a frequency used to generate the plasma. [Form 48] 43. The substrate processing system according to claim 42, A substrate processing system, wherein the N RF signals have frequencies different from a frequency used to generate the plasma. [Form 49] 43. The substrate processing system according to claim 42, The substrate processing system further includes an RF source and a matching network connected between the inner coil and the outer coil. [Form 50] 43. The substrate processing system according to claim 42, The controller is configured to control the RF source to supply more current to the outer coil than to the inner coil. [Form 51] 43. The substrate processing system according to claim 42, The substrate processing system further includes an RF source configured to provide a bias voltage to the baseplate. [Form 52] 43. The substrate processing system according to claim 42, A substrate processing system wherein at least one of the N RF signals has a different frequency than at least another one of the N RF signals. [Form 53] 43. The substrate processing system according to claim 42, A substrate processing system, wherein the N RF signals have the same frequency. [Form 54] 43. The substrate processing system according to claim 42, the M electrodes include a first electrode and a second electrode; The controller a first amount of power is supplied to the inner coil and a second amount of power is supplied to the outer coil, such that the first amount of power is different from the second amount of power; and a first RF voltage is supplied to the first electrode and a second RF voltage is supplied to the second electrode, such that the first RF voltage is greater than the second RF voltage; configured to control the supply of the RF signal; Substrate processing system. [Form 55] 55. The substrate processing system according to claim 54, The first electrode is provided radially inward of the second electrode on the base plate and receives a higher RF voltage than the second electrode. [Form 56] 55. The substrate processing system according to claim 54, The first electrode is provided radially outward of the second electrode on the base plate and receives a higher RF voltage than the second electrode. [Form 57] 43. The substrate processing system according to claim 42, the M electrodes include a first set of electrodes and a second set of electrodes; the first set of electrodes corresponds to a first RF region; the second set of electrodes corresponds to a second RF region; the second RF region is located radially inward from the first RF region; Substrate processing system. [Form 58] 43. The substrate processing system according to claim 42, A substrate processing system, wherein the M electrodes are disposed in the dielectric layer in a plane parallel to and below an upper surface of the substrate support. [Form 59] 43. The substrate processing system according to claim 42, The M electrodes are provided on different layers of the base plate. [Form 60] 43. The substrate processing system according to claim 42, The controller is configured to control the N RF signals to adjust the plasma to enhance plasma uniformity during a transient period during activation of the N RF sources. [Form 61] 43. The substrate processing system according to claim 42, A substrate processing system wherein one or more of the M electrodes also operate as heating elements.

Claims

1. 1. A substrate processing system, comprising: a substrate support disposed within the processing chamber and configured to support a substrate on an upper surface of the substrate support; a base plate made of a conductive material; a substrate support including M electrodes (M is an integer equal to or greater than 2) embedded in the base plate; N radio frequency (RF) sources (N is an integer greater than or equal to 1) each configured to supply a respective RF signal to one or more of the M electrodes, each RF signal being supplied to a different set of the M electrodes, each set including a different one or more of the M electrodes; one or more coils to independently strike and maintain a plasma in the processing chamber from the N RF sources, and individually control the voltage outputs of the N RF sources to regulate the plasma in the processing chamber; a controller configured to determine whether to increase, decrease, or maintain an ion tilt angle of the plasma, and based on the determination, control the voltage output of the N RF sources to adjust or maintain the ion tilt angle in the processing chamber; A substrate processing system comprising:

2. 2. The substrate processing system of claim 1, wherein M is greater than or equal to N.

3. 2. The substrate processing system of claim 1, wherein N is greater than or equal to M.

4. 10. The substrate processing system of claim 1, The controller selecting which one or more of the N RF sources will provide one or more of the respective RF signals to one of the M electrodes; or selecting, for each set of M electrodes, which one or more of the N RF sources will provide one or more of the respective RF signals to that set of M electrodes; a substrate processing system configured to perform at least one of the following:

5. 5. The substrate processing system of claim 4, wherein M is greater than or equal to N.

6. 10. The substrate processing system of claim 1, further comprising N cavities located on an upper surface of the base plate; The M electrodes are disposed within the N cavities.

7. 7. The substrate processing system according to claim 6, The M electrodes are embedded in a dielectric material located within the N cavities.

8. 10. The substrate processing system of claim 1, N cavities located on the upper surface of the base plate and in which the M electrodes are arranged; one or more dielectric separators disposed between the M electrodes and the substrate; a substrate processing system further comprising:

9. 10. The substrate processing system of claim 1, The substrate processing system further includes a dielectric layer disposed between the M electrodes and the base plate.

10. 10. The substrate processing system of claim 1, A substrate processing system, wherein the frequencies of the N RF signals are the same as a frequency used to generate the plasma.

11. 10. The substrate processing system of claim 1, A substrate processing system wherein the N RF signals have frequencies different from a frequency used to generate the plasma.

12. 10. The substrate processing system of claim 1, The processing chamber, the one or more coils include an inner coil and an outer coil; the inner coil is positioned outside the processing chamber adjacent a window of the processing chamber; the outer coil is disposed outside the processing chamber, adjacent the window, and spaced radially outward from the inner coil; an RF source configured to provide power to the inner coil and the outer coil; further comprising The substrate processing system, wherein the controller is further configured to control the RF source to adjust a current supplied to the inner coil relative to a current supplied to the outer coil.

13. 13. The substrate processing system of claim 12, The controller supplying more current to the outer coil than to the inner coil; or supplying a greater current to the inner coil than to the outer coil; a substrate processing system configured to control the RF source to do any of the following:

14. 10. The substrate processing system of claim 1, The substrate processing system further includes an RF source configured to provide a bias voltage to the baseplate.

15. 10. The substrate processing system of claim 1, A substrate processing system wherein at least one of the N RF signals has a different frequency than at least another one of the N RF signals.

16. 2. The substrate processing system of claim 1, wherein the N RF signals have the same frequency.

17. 10. The substrate processing system of claim 1, The substrate processing system further includes N matching networks disposed between the N RF sources and the M electrodes.

18. 1. A substrate processing system, comprising: a processing chamber including a window; a substrate support disposed within the processing chamber and configured to support a substrate on an upper surface of the substrate support; A base plate and a substrate support including M electrodes (M is an integer equal to or greater than 2) embedded in the base plate; an inner coil positioned outside the processing chamber adjacent the window; an outer coil positioned outside the processing chamber adjacent the window and spaced radially outward from the inner coil; N radio frequency (RF) sources (N is an integer greater than or equal to 1) each configured to supply a respective RF signal to one or more of the M electrodes, each RF signal being supplied to a different set of the M electrodes, each set including a different one or more of the M electrodes; N matching networks disposed between the N RF sources and the M electrodes; striking a plasma by supplying RF power to the inner coil and the outer coil, and varying a plasma density distribution profile within the processing chamber by (i) varying the power supplied to the inner coil relative to the outer coil, and (ii) varying the power supplied to at least one of the M electrodes relative to at least another one of the M electrodes; a controller configured to determine whether to increase, decrease, or maintain an ion tilt angle of the plasma, and based on the determination, control voltage outputs of the N RF sources to adjust or maintain the ion tilt angle in the processing chamber; A substrate processing system comprising:

19. 20. The substrate processing system of claim 18, wherein M is greater than or equal to N.

20. 20. The substrate processing system of claim 18, wherein N is greater than or equal to M.

21. 20. The substrate processing system of claim 18, The controller selecting which one or more of the N RF sources will provide one or more of the respective RF signals to one of the M electrodes; or selecting, for each set of M electrodes, which one or more of the N RF sources will provide one or more of the respective RF signals to that set of M electrodes; a substrate processing system configured to perform at least one of the following:

22. 22. The substrate processing system of claim 21, wherein M is greater than or equal to N.

23. 20. The substrate processing system of claim 18, further comprising N cavities located on an upper surface of the base plate; The M electrodes are disposed within the N cavities.

24. 24. The substrate processing system of claim 23, The M electrodes are embedded in a dielectric material located within the N cavities.

25. 20. The substrate processing system of claim 18, N cavities located on the upper surface of the base plate and in which the M electrodes are arranged; one or more dielectric separators disposed between the M electrodes and the substrate; The substrate processing system further comprises:

26. 20. The substrate processing system of claim 18, The substrate processing system further includes a dielectric layer disposed between the M electrodes and the base plate.

27. 20. The substrate processing system of claim 18, A substrate processing system, wherein the frequencies of the N RF signals are the same as a frequency used to generate the plasma.

28. 20. The substrate processing system of claim 18, A substrate processing system wherein the N RF signals have frequencies different from a frequency used to generate the plasma.

29. 20. The substrate processing system of claim 18, The substrate processing system further includes an RF source and a matching network connected between the inner coil and the outer coil.

30. 20. The substrate processing system of claim 18, The controller is configured to control the RF source to supply more current to the outer coil than to the inner coil.

31. 20. The substrate processing system of claim 18, The substrate processing system further includes an RF source configured to provide a bias voltage to the baseplate.

32. 20. The substrate processing system of claim 18, A substrate processing system wherein at least one of the N RF signals has a different frequency than at least another one of the N RF signals.

33. 20. The substrate processing system of claim 18, wherein the N RF signals have the same frequency.

34. 20. The substrate processing system of claim 18, the M electrodes include a first electrode and a second electrode; The controller a first amount of power is supplied to the inner coil and a second amount of power is supplied to the outer coil, the first amount of power being different from the second amount of power; and a first RF voltage is supplied to the first electrode and a second RF voltage is supplied to the second electrode, such that the first RF voltage is greater than the second RF voltage; configured to control the supply of the RF signal; Substrate processing system.

35. 35. The substrate processing system of claim 34, The first electrode is provided radially inward of the second electrode on the base plate and receives a higher RF voltage than the second electrode.

36. 35. The substrate processing system of claim 34, The first electrode is provided radially outward of the second electrode on the base plate and receives a higher RF voltage than the second electrode.

37. 20. The substrate processing system of claim 18, the M electrodes include a first set of electrodes and a second set of electrodes; the first set of electrodes corresponds to a first RF zone; the second set of electrodes corresponds to a second RF zone; the second RF zone is located radially inward from the first RF zone. Substrate processing system.

38. 20. The substrate processing system of claim 18, A substrate processing system, wherein the M electrodes are disposed in a plane that is parallel to and offset from a top surface of the substrate support.

39. 20. The substrate processing system of claim 18, The M electrodes are provided on different layers of the base plate.

40. 20. The substrate processing system of claim 18, The controller is configured to control the N RF signals to regulate the plasma to enhance plasma uniformity during a transient period during activation of the N RF sources.

41. 20. The substrate processing system of claim 18, A substrate processing system wherein one or more of the M electrodes also operate as heating elements.

42. 1. A substrate processing system, comprising: a processing chamber including a window; a substrate support disposed within the processing chamber and configured to support a substrate on an upper surface of the substrate support; A base plate and a substrate support including: a dielectric layer disposed above the base plate and having M electrodes embedded therein (M is an integer equal to or greater than 2); an inner coil positioned outside the processing chamber adjacent the window; an outer coil positioned outside the processing chamber adjacent the window and spaced radially outward from the inner coil; N radio frequency (RF) sources (N is an integer greater than or equal to 1) each configured to supply a respective RF signal to one or more of the M electrodes, each RF signal being supplied to a different set of the M electrodes, each set including a different one or more of the M electrodes; N matching networks disposed between the N RF sources and the M electrodes; striking a plasma by supplying RF power to the inner coil and the outer coil, and varying a plasma density distribution profile within the processing chamber by (i) varying the power supplied to the inner coil relative to the outer coil, and (ii) varying the power supplied to at least one of the M electrodes relative to the power supplied to at least another one of the M electrodes; a controller configured to determine whether to increase, decrease, or maintain an ion tilt angle of the plasma, and based on the determination, control voltage outputs of the N RF sources to adjust or maintain the ion tilt angle in the processing chamber; A substrate processing system comprising:

43. 43. The substrate processing system of claim 42, wherein M is greater than or equal to N.

44. 43. The substrate processing system of claim 42, wherein N is greater than or equal to M.

45. 43. The substrate processing system of claim 42, The controller selecting which one or more of the N RF sources will provide one or more of the respective RF signals to one of the M electrodes; or selecting, for each set of M electrodes, which one or more of the N RF sources will provide one or more of the respective RF signals to that set of M electrodes; a substrate processing system configured to perform at least one of the following:

46. 46. ​​The substrate processing system of claim 45, wherein M is greater than or equal to N.

47. 43. The substrate processing system of claim 42, A substrate processing system, wherein the frequencies of the N RF signals are the same as a frequency used to generate the plasma.

48. 43. The substrate processing system of claim 42, A substrate processing system wherein the N RF signals have frequencies different from a frequency used to generate the plasma.

49. 43. The substrate processing system of claim 42, The substrate processing system further includes an RF source and a matching network connected between the inner coil and the outer coil.

50. 43. The substrate processing system of claim 42, The controller is configured to control the RF source to supply more current to the outer coil than to the inner coil.

51. 43. The substrate processing system of claim 42, The substrate processing system further includes an RF source configured to provide a bias voltage to the baseplate.

52. 43. The substrate processing system of claim 42, A substrate processing system wherein at least one of the N RF signals has a different frequency than at least another one of the N RF signals.

53. 43. The substrate processing system of claim 42, A substrate processing system wherein the N RF signals have the same frequency.

54. 43. The substrate processing system of claim 42, the M electrodes include a first electrode and a second electrode; The controller a first amount of power is supplied to the inner coil and a second amount of power is supplied to the outer coil, the first amount of power being different from the second amount of power; and a first RF voltage is supplied to the first electrode and a second RF voltage is supplied to the second electrode, such that the first RF voltage is greater than the second RF voltage; configured to control the supply of the RF signal; Substrate processing system.

55. 55. The substrate processing system of claim 54, The first electrode is provided radially inward of the second electrode on the base plate and receives a higher RF voltage than the second electrode.

56. 55. The substrate processing system of claim 54, The first electrode is provided radially outward of the second electrode on the base plate and receives a higher RF voltage than the second electrode.

57. 43. The substrate processing system of claim 42, the M electrodes include a first set of electrodes and a second set of electrodes; the first set of electrodes corresponds to a first RF zone; the second set of electrodes corresponds to a second RF zone; the second RF zone is located radially inward from the first RF zone. Substrate processing system.

58. 43. The substrate processing system of claim 42, The M electrodes are disposed in the dielectric layer in a plane parallel to and below a top surface of the substrate support.

59. 43. The substrate processing system of claim 42, The M electrodes are provided on different layers of the base plate.

60. 43. The substrate processing system of claim 42, The controller is configured to control the N RF signals to regulate the plasma to enhance plasma uniformity during a transient period during activation of the N RF sources.

61. 43. The substrate processing system of claim 42, A substrate processing system wherein one or more of the M electrodes also operate as heating elements.

62. 10. The substrate processing system of claim 1, The controller is configured to adjust the ion tilt angle to improve at least one of plasma density profile uniformity and etch uniformity.

63. 7. The substrate processing system according to claim 6, A substrate processing system, wherein the N cavities are air-filled cavities.

64. 9. The substrate processing system according to claim 8, The substrate processing system, wherein the one or more dielectric separators comprise a plurality of discrete dielectric separators.

65. The substrate processing system of claim 1, N cavities located on the upper surface of the base plate and in which the M electrodes are arranged; a plurality of dielectric separators disposed between the M electrodes and the substrate; further comprising A substrate processing system, wherein a dielectric material is disposed between adjacent dielectric separators among the plurality of dielectric separators.

66. The substrate processing system of claim 1, the controller individually controls voltage outputs of the N RF sources so that a first electrode of the M electrodes is under a first plasma density region and a second electrode of the M electrodes is under a second plasma density region; the first electrode of the M electrodes has a higher RF voltage than the second electrode of the M electrodes; The first plasma density region has a higher density than the second plasma density region.

67. The substrate processing system of claim 1, The substrate processing system, wherein the controller is configured to adjust the ion tilt angle of the plasma by adjusting voltages on the M electrodes.

68. The substrate processing system of claim 1, the base plate has a dielectric layer; The M electrodes are embedded in the dielectric layer.

69. The substrate processing system of claim 1, further comprising: A substrate processing system including N cavities disposed in the base plate with the M electrodes.

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