Substrate processing apparatus, semiconductor device manufacturing method, and substrate processing program

Abstract

To improve an in-plane uniformity of a product wafer at an edge locally among a plurality of product wafers.SOLUTION: A substrate processing device comprises: (a) a processing chamber which includes a product area and a dummy area therein and a main exhaust part on the side; (b) a first injection part which is arranged so as to be opposite to the main exhaust part inside the processing chamber and supplies a first raw material to a substrate stored in the product area and the dummy area; (c) at least one of: a second injection part which is arranged on the upstream side of the flow of the first raw material and supplies more assist gas that dilutes the first raw material to the substrate stored in the dummy area than the substrate stored in the product area; and a third injection part which is provided on the downstream side of the flow of the first raw material and supplies inert gas to the substrate stored in the product area and the substrate stored in the dummy area; and (d) a fourth injection part which supplies the inert gas only to the dummy area.SELECTED DRAWING: Figure 1

Description

Technical Field

[0001] The present disclosure relates to a substrate processing apparatus, a method for manufacturing a semiconductor device, and a substrate processing program.

Background Art

[0002] Conventionally, as an example of a substrate processing apparatus, semiconductor manufacturing apparatuses for manufacturing semiconductor devices, such as those disclosed in Patent Documents 1 to 7, are known. As an example of a semiconductor manufacturing apparatus, a vertical apparatus is known. As a substrate processing apparatus of the vertical apparatus, a boat as a substrate holding member for holding wafers as substrates in multiple stages is provided in a reaction tube, and an apparatus in which substrates are processed in a processing chamber in the reaction tube while a plurality of substrates are held is known.

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Patent Document 2

Patent Document 3

Patent Document 4

Patent Document 5

Patent Document 6

Patent Document 7

Summary of the Invention

Problems to be Solved by the Invention

[0004] However, in the conventional technology, with respect to the wafers arranged at the ends of the processing chamber, there are cases where the in-plane uniformity of the thickness of the film formed on the wafers by the processing cannot be sufficiently controlled.

[0005] This disclosure provides a technology that can locally improve the in-plane uniformity of product wafers at the edges among multiple product wafers. [Means for solving the problem]

[0006] According to one aspect of this disclosure, (a) A processing chamber having a main exhaust section on the side, which houses a plurality of substrates arranged in the vertical direction, and which has a product area and a dummy area provided above and below the product area, (b) A first injection unit extending in the vertical direction and positioned inside the processing chamber opposite the main exhaust unit, which supplies the first raw material toward the substrate housed in the product area and the dummy area, (c) At least one of the following: a second injection unit provided upstream of the flow of the first raw material from the center of the substrate housed inside the processing chamber, which supplies more assist gas for diluting the first raw material toward the substrate housed in the dummy region than toward the substrate housed in the product region; and a third injection unit provided downstream of the flow of the first raw material from the center of the housed substrate, which supplies inert gas toward the substrate housed in the product region and the substrate housed in the dummy region. (d) A fourth injection unit that supplies inert gas only to the dummy region, A technology possessing this feature is provided. [Effects of the Invention]

[0007] According to this disclosure, it is possible to locally improve the in-plane uniformity of the product wafers at the edges among multiple product wafers. [Brief explanation of the drawing]

[0008] [Figure 1] This is a front view illustrating a substrate processing apparatus according to an embodiment of the present disclosure, with a portion of it cut off by a vertical plane along the depth direction. [Figure 2]This is a cross-sectional view taken along line 2-2 in Figure 1, illustrating the substrate processing apparatus according to this embodiment, cut in the horizontal direction. [Figure 3] This is a cross-sectional view taken along line 3-3 in Figure 2, illustrating the processing container of the substrate processing apparatus according to this embodiment, cut along a vertical plane in the width direction. [Figure 4] This is a side view illustrating the main exhaust slit and sub-exhaust slit formed in the inner tube of the processing container of the substrate processing apparatus according to this embodiment, as seen from the outer tube side. [Figure 5] This is a front view illustrating the injection holes of each nozzle in the substrate processing apparatus according to this embodiment. [Figure 6] This is a cross-sectional view illustrating an inclined injection port that opens diagonally upward. [Figure 7] This is a block diagram illustrating the control system of the control unit of the substrate processing apparatus according to this embodiment. [Figure 8] This is a flowchart illustrating the substrate processing steps according to this embodiment. [Figure 9] This is a timing chart illustrating the film deposition sequence in the substrate processing step according to the embodiment. [Figure 10] Figure 10(A) is a graph illustrating the film thickness of the product wafer of a semiconductor device manufactured by a substrate processing apparatus according to a comparative example, and Figure 10(B) is a graph illustrating the film thickness of the product wafer of a semiconductor device manufactured by a substrate processing apparatus according to the present embodiment. [Figure 11] This is a cross-sectional view illustrating the substrate processing apparatus according to the first modified example, cut horizontally at the same height as line 2-2 in Figure 1. [Modes for carrying out the invention]

[0009] Hereinafter, one aspect of the present disclosure will be described mainly with reference to FIGS. 1 to 11. In the following description, the drawings used are all schematic, and the dimensional relationships between the elements shown in the drawings, the ratios of the elements, etc. do not necessarily match the actual ones. Also, between multiple drawings, the dimensional relationships between the elements, the ratios of the elements, etc. do not necessarily match.

[0010] Also, unless otherwise specified in the specification, each element is not limited to one, and there may be a plurality of them. Also, in the drawings, substantially the same elements are denoted by the same reference numerals, and duplicate descriptions in the specification are omitted.

[0011] Also, the term "wafer" used in this specification may mean the wafer itself or a laminate of the wafer and a predetermined layer or film formed on its surface. The term "surface of the wafer" used in this specification may mean the surface of the wafer itself or the surface of a predetermined layer or the like formed on the wafer. When it is described in this specification that "a predetermined layer is formed on the wafer", it may mean directly forming a predetermined layer on the surface of the wafer itself or forming a predetermined layer on a layer or the like formed on the wafer. When the term "substrate" is used in this specification, it has the same meaning as when the term "wafer" is used.

[0012] Also, the term "agent" used in this specification includes at least one of gaseous substances and liquid substances. The liquid substance includes mist-like substances. That is, the film-forming agent, the modifying agent, and the etching agent may contain a gaseous substance, may contain a liquid substance such as a mist-like substance, or may contain both of them.

[0013] Furthermore, numerical ranges expressed in this specification, such as "1 to 2000 Pa," mean that the lower and upper limits are included within that range. For example, "1 to 2000 Pa" means "1 Pa or more and 2000 Pa or less." The same applies to other numerical ranges. Also, if a numerical value contains "0," "0" means that the gas or other substance is not supplied. For example, if the gas supply flow rate contains 0 slm, 0 slm means that the gas is not supplied. This also applies to other substances in the following explanation.

[0014] <Overall configuration of the substrate processing equipment> First, the overall configuration of the substrate processing apparatus 10 according to this embodiment will be described with reference to Figures 1 to 10. Note that the vertical direction H of the apparatus is the vertical direction, the width direction W of the apparatus is the horizontal direction, and the depth direction D of the apparatus is the horizontal direction.

[0015] As shown in Figure 1, the substrate processing apparatus 10 comprises a control unit 280 that controls various parts and a processing furnace 202. The processing furnace 202 has a heater 207, which is a heating means. The heater 207 is cylindrical and is mounted in the vertical direction of the apparatus by being supported on a heater base (not shown). The heater 207 also functions as an activation mechanism that activates the processing gas with heat. The control unit 280 will be described in detail later.

[0016] Inside the heater 207, a reaction tube 203, which constitutes the reaction vessel, is arranged upright in a concentric circle with the heater 207. The reaction tube 203 is made of a heat-resistant material such as quartz (SiO2) or silicon carbide (SiC). The substrate processing apparatus 10 is a so-called hot-wall type.

[0017] As shown in Figure 2, the reaction tube 203 has a cylindrical inner tube 12 and a cylindrical outer tube 14 that surrounds the inner tube 12. That is, the outer tube 14 together with the inner tube 12 constitutes the reaction tube 203. By surrounding the inner tube 12, the outer tube 14 forms a gap between itself and the cylindrical part, which serves as an exhaust space S. The inner tube 12 is arranged concentrically with the outer tube 14. The inner tube 12 is an example of a pipe member.

[0018] The inner tube 12 has a covered upper section and side walls that serve as cylindrical sections for housing multiple substrates. Specifically, as shown in Figure 1, the inner tube 12 is formed in a closed-end shape with an open lower end and a flat wall at the upper end. The outer tube 14 is also formed in a closed-end shape with an open lower end and a flat wall at the upper end. Furthermore, as shown in Figure 2, a supply buffer 222 serving as a nozzle chamber is formed in the exhaust space S between the inner tube 12 and the outer tube 14. Details of the supply buffer 222 will be described later.

[0019] As shown in Figure 1, a processing chamber 201 for processing wafers 200 as substrates is formed inside the inner tube 12. This processing chamber 201 is also capable of housing a boat 217, which is an example of a substrate holder capable of holding wafers 200 in a horizontal position with multiple layers aligned vertically, and the inner tube 12 surrounds the housed wafers 200. Multiple wafers 200 are arranged inside the cylindrical portion of the inner tube 12, along the direction of the axis of the cylindrical portion. Further details about the inner tube 12 will be described later.

[0020] The lower end of the reaction tube 203 is supported by a cylindrical manifold 226. The manifold 226 is made of a metal such as nickel alloy or stainless steel, or a heat-resistant material such as SiO2 or SiC. A flange is formed at the upper end of the manifold 226, and the lower end of the outer tube 14 is placed on this flange. An airtight member 220, such as an O-ring, is placed between this flange and the lower end of the outer tube 14, making the inside of the reaction tube 203 airtight.

[0021] A seal cap 219 is airtightly attached to the opening at the lower end of the manifold 226 via an airtight member 220 such as an O-ring, thereby airtightly sealing the opening at the lower end of the reaction tube 203, i.e., the opening of the manifold 226. The seal cap 219 is made of a metal such as nickel alloy or stainless steel and is formed in a disc shape. The seal cap 219 may also be configured to cover its outside with a heat-resistant material such as SiO2 or SiC.

[0022] A boat support base 218 is provided on the seal cap 219 to support the boat 217. The boat support base 218 is made of a heat-resistant material such as SiO2 or SiC and functions as an insulating part.

[0023] The boat 217 is erected on a boat support base 218. The boat 217 is made of a heat-resistant material such as SiO2 or SiC. As shown in Figure 2, the boat 217 has a bottom plate (not shown) fixed to the boat support base 218 and a top plate positioned above it, with a number of support columns 217a installed between the bottom plate and the top plate.

[0024] Boat 217 holds multiple wafers 200 to be processed in the processing chamber 201 within the inner tube 12. As shown in Figure 2, the multiple wafers 200 are supported by the pillars 217a of boat 217, maintaining a horizontal orientation with a certain distance between them and with their centers aligned. The loading direction of the multiple wafers 200 is the axial direction of the reaction tube 203. In other words, the center of the substrate is aligned with the central axis of boat 217, and the central axis of boat 217 coincides with the central axis of reaction tube 203.

[0025] A rotating mechanism 267 for rotating the boat is provided on the underside of the seal cap 219. The rotating shaft 265 of the rotating mechanism 267 passes through the seal cap 219 and is connected to the boat support base 218, and the rotating mechanism 267 rotates the boat 217 via the boat support base 218, thereby rotating the wafer 200.

[0026] The seal cap 219 is raised and lowered vertically by an elevator 115, which is a lifting mechanism located outside the reaction tube 203, allowing the boat 217 to be moved in and out of the processing chamber 201.

[0027] Multiple nozzle support sections are installed in the manifold 226, passing through the manifold 226 to support the gas nozzles 340a, 340b, 341a, 341b, 342c2, 343a1, 343a2, 343b, 342a2, 342c1, and 342a1 that supply gas into the processing chamber 201. In this embodiment, four nozzle support sections are installed. In Figure 1, only the gas nozzle 341b and nozzle support section 350a are shown as examples. The nozzle support sections are made of materials such as nickel alloy or stainless steel.

[0028] Gas supply pipes 310a to 310i, which supply gas to the inside of the processing chamber 201, are connected to one end of the nozzle support section. Gas nozzles 340a, 340b, 341a, 341b, 342c2, 343a1, 343a2, 343b, 342a2, 342c1, and 342a1 are connected to the other end of the nozzle support section. The gas nozzles 340a, 340b, 341a, 341b, 342c2, 343a1, 343a2, 343b, 342a2, 342c1, and 342a1 are made of a heat-resistant material such as SiO2 or SiC. Details regarding gas nozzles 340a, 340b, 341a, 341b, 342c2, 343a1, 343a2, 343b, 342a2, 342c1, and 342a1 will be described later.

[0029] (Gas supply pipe) As shown in Figure 2, gas supply pipes 310a and 310f are connected to the first gas nozzles 340a, 340b, 341a, and 341b via nozzle support sections. Gas supply pipe 310e is connected to the seventh gas nozzle 342a1 via nozzle support sections. Gas supply pipes 310c and 310g are connected to the sixth gas nozzle 342c1 via nozzle support sections.

[0030] Furthermore, the gas supply pipe 310d is connected to the second gas nozzle 342c2 via the nozzle support section 350d. Also, the gas supply pipe 310b is connected to the fifth gas nozzle 342a2 via the nozzle support section. Furthermore, the gas supply pipe 310h is connected to the third gas nozzles 343a1 and 343a2 via the nozzle support section. Finally, the gas supply pipe 310i is connected to the fourth gas nozzle 343b via the nozzle support section.

[0031] The gas supply pipe 310a is equipped with, in order from the upstream side in the direction of gas flow, a raw material gas supply source 360a for supplying the first raw material gas as the processed gas, a mass flow controller (MFC) 320a which is an example of a flow control device, and a valve 330a which is an on / off valve.

[0032] The gas supply pipe 310b is equipped with, in order from upstream, an assist gas supply source 360b, an MFC 320b, and a valve 330b, which supply assist gas as a processing gas. The gas supply pipe 310c is equipped with, in order from upstream, a raw material gas supply source 360c, an MFC 320c, and a valve 330c, which supply a second raw material gas as a processing gas. The gas supply pipe 310d is equipped with, in order from upstream, an assist gas supply source 360d, an MFC 320d, and a valve 330d, which supply assist gas as a processing gas.

[0033] The gas supply pipe 310e is equipped with, in order from upstream, an assist gas supply source 360e, an MFC 320e, and a valve 330e, which supply assist gas as a process gas. The gas supply pipe 310h is equipped with, in order from upstream, an inert gas supply source 360h, an MFC 320h, and a valve 330h, which supply inert gas as a process gas. The gas supply pipe 310e is equipped with, in order from upstream, an inert gas supply source 360i, an MFC 320i, and a valve 330i, which supply inert gas as a process gas.

[0034] Downstream of valve 330a in gas supply pipe 310a, gas supply pipe 310f is connected to supply inert gas. Gas supply pipe 310f is equipped with, in order from upstream, an inert gas supply source 360f, an MFC 320f, and a valve 330f, which supply inert gas as a processing gas.

[0035] Furthermore, a gas supply pipe 310g, which supplies inert gas, is connected downstream of valve 330c in gas supply pipe 310c. Gas supply pipe 310g is equipped with, in order from upstream, an inert gas supply source 360g, an MFC 320g, and a valve 330g, which supply inert gas as a processing gas. Assist gas supply sources 360b, 360d, and 360e and inert gas supply sources 360f, 360g, 360h, and 360i are connected to a common supply source.

[0036] (Supply system to the first gas nozzles 340a, 340b, 341a, and 341b) The first raw material gas supply system mainly consists of gas supply pipe 310a, gas supply pipe 310f, MFC 320a, MFC 320f, valve 330a, and valve 330f. A raw material gas supply source 360a and an inert gas supply source 360f may also be included in the first raw material gas supply system.

[0037] (Supply system to the second gas nozzle 342c2) The assist gas supply system is mainly comprised of the gas supply pipe 310d, MFC 320d, and valve 330d, which supply only the upper dummy region of the two side dummy regions described later. The assist gas supply source 360d may also be included in the assist gas supply system.

[0038] (Supply system to third gas nozzles 343a1 and 343a2) The inert gas supply system for both the product area and the side dummy area is mainly comprised of the gas supply pipe 310h, MFC 320h, and valve 330h. An inert gas supply source 360h may also be included in the inert gas supply system.

[0039] (Supply system to the fourth gas nozzle 343b) The assist gas supply system for the side dummy area is mainly comprised of the gas supply pipe 310i, MFC 320i, and valve 330i. An inert gas supply source 360i may also be included in the inert gas supply system.

[0040] (Supply system to the fifth gas nozzle 342a2) The assist gas supply system for only the lower dummy region of the two side dummy regions is mainly comprised of the gas supply pipe 310e, MFC 320e, and valve 330e. The assist gas supply source 360e may also be included in the assist gas supply system.

[0041] (Supply system to the sixth gas nozzle 342c1) The second raw material gas supply system is mainly composed of gas supply pipe 310c, gas supply pipe 310g, MFC 320c, MFC 320g, valve 330c, and valve 330g. A raw material gas supply source 360c and an inert gas supply source 360g may also be included in the second raw material gas supply system.

[0042] (Supply system to the seventh gas nozzle 342a1) The assist gas supply system for both the product region and the side dummy region is mainly comprised of the gas supply pipe 310b, MFC 320b, and valve 330b. An assist gas supply source 360b may also be included in the assist gas supply system.

[0043] (Exhaust system) The outer tube 14 of the reaction tube 203 has a main exhaust port 230. The main exhaust port 230 is formed below the exhaust port 237 of the inner tube. The inner tube 12 of the reaction tube 203 has a main exhaust slit 236 which serves as the main exhaust section. In other words, the reaction tube 203 has a main exhaust slit 236 on its side.

[0044] As shown in Figure 2, the main exhaust port 230 is positioned so as to be aligned in a straight line with the main exhaust slit 236 in a plan view. Although not shown, a pair of secondary exhaust ports are formed in the outer tube 14 of the reaction tube 203. As shown in Figure 2, each of the pair of secondary exhaust ports is positioned so as to be aligned in a straight line with the corresponding secondary exhaust slit 238 in a plan view. The secondary exhaust slit 238 corresponds to the secondary exhaust section of this disclosure.

[0045] The main exhaust port 230 and the pair of secondary exhaust ports connect the exhaust space S to the outside of the reaction tube 203. The main exhaust port 230 and the pair of secondary exhaust ports correspond to the exhaust ports of this disclosure. The main exhaust port 230 is connected to the main exhaust duct 231, which sends the raw material gas to the outside. Also, as shown in Figure 2, the secondary exhaust ports are connected to the secondary exhaust duct 232, which sends the raw material gas to the outside.

[0046] The main exhaust duct 231 is connected to a vacuum pump 246, which acts as a vacuum evacuation device, via a pressure sensor 245 that detects the pressure inside the processing chamber 201 and an APC (Auto Pressure Controller) valve 244 that acts as a pressure regulator. The main exhaust duct 231 downstream of the vacuum pump 246 is connected to an exhaust gas treatment device (not shown). This configuration allows for vacuum evacuation to be performed so that the pressure inside the processing chamber 201 reaches a predetermined pressure (i.e., a vacuum) by controlling the output of the vacuum pump 246 and the opening degree of the APC valve 244.

[0047] Although not shown in the diagram, a vacuum pump is also connected to the secondary exhaust duct 232 via a pressure sensor and an APC valve, similar to the main exhaust duct 231. The secondary exhaust duct 232 downstream of the vacuum pump is connected to an exhaust gas treatment device, etc., which is not shown in the diagram.

[0048] The main exhaust system mainly consists of a main exhaust duct 231, an APC valve 244, and a pressure sensor 245. A vacuum pump 246 may also be included in the exhaust system. The secondary exhaust system mainly consists of a secondary exhaust duct 232, an APC valve (not shown) connected to the secondary exhaust duct 232, and a pressure sensor (not shown) connected to the secondary exhaust duct 232. A vacuum pump (not shown) connected to the secondary exhaust duct 232 may also be included in the exhaust system.

[0049] Furthermore, a temperature sensor (not shown) is installed inside the reaction tube 203 as a temperature detector. Based on the temperature information detected by the temperature sensor, the power supplied to the heater 207 is adjusted so that the temperature inside the processing chamber 201 reaches a desired temperature distribution.

[0050] In this specification, processing temperature refers to the temperature of the wafer 200 or the temperature inside the processing chamber 201, and processing pressure refers to the pressure inside the processing chamber 201. Processing time refers to the duration for which the processing is continued. These definitions also apply in the following descriptions.

[0051] In this configuration, in the processing furnace 202, a boat 217, which stacks multiple wafers 200 to be batched, is brought into the processing chamber 201 by a boat support 218. The wafers 200 brought into the processing chamber 201 are then heated to a predetermined temperature by a heater 207. A device having such a processing furnace is called a vertical batch device. Multiple wafers housed in the processing chamber can be broadly classified into product wafers and side dummy wafers. Product wafers are wafers on which semiconductor elements such as ICs are actually manufactured. Product wafers are placed in the center in the vertical direction of the entire array area of ​​the arranged wafers. On the other hand, side dummy wafers are wafers used in place of product wafers and are placed at both ends in the vertical direction of the entire array area of ​​the arranged wafers, for example, on either side of the product area, where the quality as a product wafer cannot be ensured.

[0052] (Supply buffer) As shown in Figure 2, the supply buffer 222 is a region provided on the side wall of the cylindrical portion of the inner tube 12 and protruding outward from the side wall. The supply buffer 222 is divided into three sections along the circumferential direction of the cylindrical portion by partition walls 18c and 18d.

[0053] First gas nozzles 340a, 340b, 341a, and 341b for supplying the first raw material gas are provided in the central portion 222b of the divided supply buffer 222. At the boundary between the central portion 222b of the supply buffer 222 and the cylindrical portion, a sector is formed by a virtual arc connecting both ends of the cylindrical portion in the circumferential direction and the center C1 of the wafer 200. In this embodiment, the central angle θ of the sector is less than 30 degrees. In this disclosure, the central angle of the sector can be set arbitrarily.

[0054] As shown in Figure 3, a supply slit 235b is formed in the central portion 222b of the supply buffer 222. The supply slit 235b opens over the entire vertical direction H and the entire width direction W of the device in the central portion 222b. As a result, the entire vertical direction H and the entire width direction W of the first gas nozzles 340a, 340b, 341a, and 341b face the wafer 200 inside the cylindrical portion.

[0055] (Exhaust vents) As shown in Figure 2, multiple exhaust slits, including a main exhaust slit 236 and sub-exhaust slits 238, are formed in the side wall of the cylindrical portion. The multiple exhaust slits exhaust the raw material gas from the inside of the cylindrical portion. In this embodiment, the number of multiple exhaust slits is three, consisting of one main exhaust slit 236 and two sub-exhaust slits 238. In this disclosure, the number of multiple exhaust slits may be at least two or more.

[0056] (Main exhaust slit) The main exhaust slit 236 is formed on the side wall of the cylindrical portion opposite the supply buffer 222 with respect to the center C1 of the wafer 200. In this disclosure, the main exhaust slit 236 is not essential.

[0057] (Secondary exhaust slit) The two secondary exhaust slits 238 open on either side of a virtual vertical plane A set inside the cylindrical portion. As shown in Figure 2, the virtual vertical plane A is set to pass through the circumferential center of the cylindrical portion and the axis of the cylindrical portion at the boundary between the supply buffer 222 and the cylindrical portion in a plan view. The axis of the cylindrical portion coincides with the center of the wafer 200.

[0058] The two sub-exhaust slits 238, as a pair of exhaust slits, are at the same height as the main exhaust slit 236 and sandwich the main exhaust slit 236. In a plan view, a first virtual line L1 is set connecting the center of each sub-exhaust slit 238 to the center C1 of the wafer 200. In this embodiment, the angle between the first virtual line L1 and the virtual vertical plane A is obtuse. This angle is measured starting from the supply buffer 222 side. In this disclosure, the angle between the first virtual line L1 and the virtual vertical plane A is not limited to an obtuse angle.

[0059] As shown in Figure 2, the width of each of the two sub-exhaust slits 238 in the circumferential direction of the cylindrical portion is smaller than the width of the main exhaust slit 236. In this disclosure, the width of the sub-exhaust slits 238 may be greater than or equal to the width of the main exhaust slit 236.

[0060] As shown in Figure 4, in this embodiment, the opening width W1 along the circumferential direction of the cylindrical portion of the main exhaust slit 236 narrows along the axis direction of the cylindrical portion from the side opposite the main exhaust port 230 (i.e., the upper side in Figure 4) towards the main exhaust port 230 (i.e., the lower side in Figure 4). Similarly, the opening width along the circumferential direction of each cylindrical portion of the pair of sub-exhaust slits 238 narrows along the axis direction of the cylindrical portion from the side opposite the sub-exhaust port towards the sub-exhaust port.

[0061] In this disclosure, the opening width along the circumferential direction of the cylindrical portions of the main exhaust slit 236 and the pair of sub-exhaust slits 238 can be arbitrarily set. Note that, for clarity, the counter buffer is omitted from Figure 4. The counter buffer will be explained later.

[0062] <Main part configuration> Next, each gas nozzle in the substrate processing apparatus 10 according to this embodiment will be described in detail. Note that the positions of the gas nozzles 340a, 340b, 341a, 341b, 342c2, 343a1, 343a2, 343b, 342a2, 342c1, and 342a1 in Figure 5 are schematic positions for illustrative purposes and differ from the actual positions inside the processing chamber 201.

[0063] (Product area and side dummy area) First, as shown in Figure 5, the processing chamber 201 includes a product area P where product wafers are placed, and an upper dummy area TSD and a lower dummy area BSD where side dummy wafers are placed. In this embodiment, an example is given in which two side dummy areas are provided: the upper dummy area TSD, which is the area where the top side dummy wafer is placed, and the lower dummy area BSD, which is the area where the bottom side dummy wafer is placed. However, in this disclosure, the side dummy areas only need to be provided on at least one of the upper and lower sides of the product area P. In that sense, the upper dummy area TSD and the lower dummy area BSD are collectively referred to as side dummy (SD) areas. The product area P, the upper dummy area TSD, and the lower dummy area BSD can be arranged, for example, to divide the length of the array area into three equal parts.

[0064] In this disclosure, among multiple product wafers, some wafers located at the edge on the upper dummy region side are referred to as "top product wafers." Similarly, some wafers located at the edge on the lower dummy region side are referred to as "bottom product wafers." The top product wafers and bottom product wafers are collectively referred to as "edge product wafers."

[0065] In addition, a monitor wafer may be placed between the side dummy wafer and the product wafer. The monitor wafer is a wafer used to monitor whether the desired film deposition has been achieved when manufacturing a semiconductor device. In this disclosure, if the same pattern as the product wafer is formed on the monitor wafer, the monitor region where the monitor wafer is placed may be included in the product region P. On the other hand, if the monitor wafer does not have a pattern with a surface area equivalent to that of the product wafer, or if no pattern is formed at all, the monitor region where the monitor wafer is placed may be included in the upper dummy region TSD or the lower dummy region BSD.

[0066] In the SD region, when a dummy wafer with a smaller surface area than the product wafer is placed, the rate of surface reaction slows down, and the amount of processing gas consumed is less than that consumed in the product region. Furthermore, within the processing chamber, a top space is formed above the upper dummy region, and a bottom space is formed below the lower dummy region. As a result, processing gas tends to accumulate as excess gas in the top and bottom spaces. This accumulation can increase the film thickness at the edges of the product wafers in the top and bottom regions, worsening in-plane uniformity. Consequently, inter-plane uniformity can also be worsened.

[0067] Furthermore, in the following description, each gas nozzle within the supply buffer 222 will be broadly divided into gas injection units located upstream of the center C1 of the wafer 200 in a plan view, and gas injection units located downstream. In this specification, the position on the boundary line between the upstream and downstream sides, that is, the position on the imaginary line perpendicular to the imaginary vertical plane A that includes the center C1 of the wafer 200 in a plan view, may be included in either the upstream or downstream side. Also, the position of each gas nozzle in a plan view refers to the position of the center of the cylindrical nozzle.

[0068] [Upstream nozzle] Upstream of the supply buffer 222, the first gas nozzles 340a, 340b, 341a, and 341b are arranged as the first injection section, the sixth gas nozzle 342c1 is arranged as the sixth injection section, the second gas nozzle 342c2 is arranged as the second injection section, the fifth gas nozzle 342a2 is arranged as the fifth injection section, and the seventh gas nozzle 342a1 is arranged as the seventh injection section.

[0069] (1st injection part) The first gas nozzles 340a, 340b, 341a, and 341b extend vertically and are positioned opposite the main exhaust slit 236, as shown in Figure 2. They have injection holes facing both the product region P and the dummy region. The first gas nozzles 340a, 340b, 341a, and 341b supply the first raw material gas to the product wafer and the dummy wafer from the upstream side.

[0070] As shown in Figure 3, the first gas nozzles 340a, 340b, 341a, and 341b have three or more injection holes arranged along a direction substantially parallel to the surface of the substrate. In this disclosure, the number of injection holes in the first gas nozzles 340a, 340b, 341a, and 341b does not need to be one or more.

[0071] As shown in Figure 2, the first gas nozzles 340a, 340b, 341a, and 341b are nozzle arrays in which multiple linear circular tubes are arranged along the circumference of the processing chamber 201. It should be noted that, in this disclosure, it is not essential that the first gas nozzles 340a, 340b, 341a, and 341b are nozzle arrays.

[0072] (Return nozzle) As shown in Figure 3, in this embodiment, the four first gas nozzles 340a, 340b, 341a, and 341b are formed by two return nozzles 340 and 341. That is, of the four first nozzles, the two lower gas nozzles 340a and 340b in Figure 2 are formed by one return nozzle 340, while the two upper gas nozzles 341a and 341b in Figure 2 are formed by the other return nozzle 341. In this disclosure, two nozzles may be formed by only one return nozzle.

[0073] Furthermore, in this disclosure, the number of first nozzles may be one, or any number of two or more. Also, in this disclosure, the multiple nozzles do not necessarily have to be return nozzles; for example, they may be multiple nozzles that are independent of each other.

[0074] As shown in Figure 3, the two return nozzles each have a forward pipe and a return pipe through which the raw material gas flows. The upper ends of the forward pipes and the upper ends of the return pipes of the two return nozzles are connected. The return pipes of the two return nozzles are adjacent to each other, and the forward pipes of the two return nozzles are spaced apart. In this embodiment, the inner diameter of the forward pipe and the inner diameter of the return pipe are the same. In this disclosure, the inner diameter of the forward pipe and the inner diameter of the return pipe may be different.

[0075] (Injection hole) Each of the two return nozzles 340 and 341 has three or more rows of injection holes 234 extending along the longitudinal direction of the return nozzle in its forward and return pipes. The same raw material gas is injected from the injection holes 234. The first raw material gas is injected radially in a plan view.

[0076] In this disclosure, it is not mandatory for the first gas nozzles 340a, 340b, 341a, and 341b to have three or more rows of injection holes arranged along the vertical direction. The first gas nozzles 340a, 340b, 341a, and 341b may have three or more injection holes arranged along the circumferential direction of the cylindrical portion in a plane parallel to the surface of the substrate. Furthermore, in this disclosure, the number of injection holes can be arbitrarily set to one, two, or four or more.

[0077] (Partition plate) As shown in Figure 5, partition plates 359 are provided on the sides of the first gas nozzles 340a, 340b, 341a, and 341b below the lower dummy area BSD, protruding from the sides of the first gas nozzles 340a, 340b, 341a, and 341b. The partition plates 359 obstruct the vertical flow of gas inside the processing chamber 201. In this embodiment, the partition plates 359 are exemplified as protruding from both the left and right sides of the first gas nozzles 340a, 340b, 341a, and 341b in Figure 5, but the disclosure is not limited thereto. In this disclosure, the partition plates 359 only need to be provided around at least a portion of the first gas nozzles 340a, 340b, 341a, and 341b.

[0078] (6th injection part) The sixth gas nozzle 342c1 has an injection hole that faces at least the product region P. The sixth gas nozzle 342c1 supplies the second raw material gas to the product wafer and the dummy wafer from the upstream side.

[0079] In this embodiment, an example is shown in which the injection holes of the sixth gas nozzle 342c1 are provided in both the product area P and the dummy area. However, in this disclosure, the injection holes of the sixth gas nozzle 342c1 may be provided only in the product area P. Furthermore, in this disclosure, the sixth gas nozzle 342c1 is not essential.

[0080] (2nd injection part) The second gas nozzle 342c2 has injection holes that supply assist gas only to the substrate in the upper dummy region TSD. The number of injection holes in the second gas nozzle 342c2 is one or more. That is, the second gas nozzle 342c2 supplies assist gas from the upstream side to one or more dummy wafers. In this embodiment, the case in which the second gas nozzle 342c2 has one injection hole is exemplified, but in this disclosure, one or more can be arbitrarily set.

[0081] In this disclosure, the second gas nozzle 342c2 injects more assist gas into the side dummy region than into the product region P. In this embodiment, the injection holes of the second gas nozzle 342c2 are provided only in the upper dummy region TSD, but in this disclosure, the injection holes of the second gas nozzle 342c2 may be provided in both the product region P and the dummy region.

[0082] When injection holes are provided in both the product region P and the dummy region, the number of injection holes on the side dummy region side is greater than the number of injection holes on the product region P side, so that more assist gas is injected into the dummy region than into the product region P. Alternatively, the number of injection holes arranged in a single row may be changed, for example, so that there are three injection holes arranged in a single row on the side dummy region side and one injection hole arranged in a single row on the product region P side.

[0083] (5th injection part) The fifth gas nozzle 342a2 is positioned upstream of the flow of the first raw material gas from the center of the substrate and has injection holes that supply assist gas only to the substrate in the lower dummy region BSD. The number of injection holes in the fifth gas nozzle 342a2 is two or more. That is, the fifth gas nozzle 342a2 supplies assist gas from the upstream side to two or more dummy wafers. In this embodiment, the case in which the fifth gas nozzle 342a2 has three injection holes is exemplified, but in this disclosure, the number can be arbitrarily set to two or more.

[0084] In this embodiment, by arranging two nozzles, the second gas nozzle 342c2 and the fifth gas nozzle 342a2, on the upstream side, the film thickness of each wafer can be adjusted, and as a result, the inter-plane uniformity of the entire wafer can be adjusted. In this disclosure, the fifth gas nozzle 342a2 is not essential. If the fifth gas nozzle 342a2 is not provided, the second gas nozzle 342c2 may have both an injection hole facing the upper dummy region TSD and an injection hole facing the lower dummy region BSD. Alternatively, in this disclosure, the second gas nozzle 342c2 may have only an injection hole facing the lower dummy region BSD.

[0085] (7th injection part) The seventh gas nozzle 342a1 has an injection port facing at least the product region P. In this embodiment, an example is shown in which the injection port of the seventh gas nozzle 342a1 is provided in both the product region P and the dummy region, but in this disclosure, the injection port of the seventh gas nozzle 342a1 may be provided only in the product region P. Furthermore, in this disclosure, the seventh gas nozzle 342a1 is not essential.

[0086] The seventh gas nozzle 342a1 supplies assist gas to the product wafer and dummy wafer from the upstream side. The assist gas supplied by the seventh gas nozzle 342a1 is a different type of gas from both the first and second source gases. The seventh gas nozzle 342a1 allows for adjustment of the in-plane uniformity of each product wafer.

[0087] Furthermore, the seventh gas nozzle 342a1 supplies assist gas when the first raw material gas is supplied from the first gas nozzles 340a, 340b, 341a, and 341b, and the second raw material gas is supplied from the sixth gas nozzle 342c1.

[0088] In this embodiment, the sixth gas nozzle 342c1 and the seventh gas nozzle 342a1 are arranged to sandwich the first gas nozzles 340a, 340b, 341a, and 341b. The seventh gas nozzle 342a1 supplies an assist gas when the first raw material gas, which is a Group 14 element raw material gas, is supplied from the first gas nozzles 340a, 340b, 341a, and 341b. Examples of Group 14 element raw material gases include C, Si, Ge, Sn, and Pb. In this disclosure, the first raw material gas may be a raw material gas other than a Group 14 element.

[0089] [Downstream nozzle] Downstream of the supply buffer 222, a third gas nozzle 343a1, 343a2 is positioned as a third injection unit, and a fourth gas nozzle 343b is positioned as a fourth injection unit.

[0090] (3rd injection part) The third gas nozzles 343a1 and 343a2 have injection holes facing both the product region P and the dummy region. The third gas nozzles 343a1 and 343a2 supply inert gas to the product wafer and the dummy wafer from the downstream side. The third gas nozzles 343a1 and 343a2 can be used to adjust the in-plane uniformity of each product wafer.

[0091] In this embodiment, a pair of third gas nozzles 343a1 and 343a2 are provided on either side of a virtual vertical plane A that connects the main exhaust port and the center of the substrate. In this disclosure, the number of third gas nozzles 343a1 and 343a2 is not limited to a pair; there may be one, or three or more.

[0092] The third gas nozzles 343a1 and 343a2 are positioned as counter nozzles in a plan view where the angle between the second virtual line L2 connecting the injection direction of the third gas nozzles 343a1 and 343a2 and the center C1 of the wafer 200 and the virtual vertical plane A (starting from the supply buffer 222 side) is obtuse. The third gas nozzles 343a1 and 343a2 of the counter nozzles are each housed inside the counter buffer 222d. The counter buffer 222d, like the supply buffer 222, is a region provided on the side wall of the cylindrical portion of the inner tube 12 and protruding outward from the side wall.

[0093] In this embodiment, an example was given in which both the second gas nozzle 342c2 and the third gas nozzles 343a1 and 343a2 are provided. However, in this disclosure, it is not essential that both the second gas nozzle 342c2 and the third gas nozzles 343a1 and 343a2 are provided. It is sufficient that at least one of the second gas nozzle 342c2 and the third gas nozzles 343a1 and 343a2 is provided.

[0094] (Horizontal injection nozzles and inclined injection nozzles) As shown in Figure 5, the third gas nozzles 343a1 and 343a2 are provided with a plurality of horizontal injection holes 354 and inclined injection holes 355. As shown in Figure 6, the horizontal injection holes 354 open substantially parallel to the surface of the substrate. The inclined injection holes 355 are located higher than the uppermost horizontal injection hole 354 among the plurality of horizontal injection holes 354. In Figure 6, the inclined injection holes 355 open diagonally upward. In this disclosure, the number of inclined injection holes 355 is not limited to one, but may be multiple.

[0095] (4th injection part) The fourth gas nozzle 343b has both an injection hole facing the upper dummy region TSD and an injection hole facing the lower dummy region BSD. The fourth gas nozzle 343b does not have an injection hole facing the product region P. That is, the fourth gas nozzle 343b injects inert gas only into the upper dummy region TSD and the lower dummy region BSD. In this disclosure, the number of injection holes in the fourth gas nozzle 343b can be arbitrarily set in the upper dummy region TSD and the lower dummy region BSD, respectively.

[0096] The fourth gas nozzle 343b is provided as a counter nozzle at a position where, in a plan view, the angle between the second virtual line L2 connecting the center of the fourth gas nozzle 343b and the center C1 of the wafer 200 and the virtual vertical plane A (starting from the supply buffer 222 side) is obtuse. That is, the fourth gas nozzle 343b is located downstream of the flow of the first raw material gas and outside the virtual vertical plane A. In this disclosure, the position of the fourth gas nozzle 343b is arbitrary. The counter nozzle fourth gas nozzle 343b is housed inside the counter buffer 222e. The counter buffer 222e, like the supply buffer 222, is a region provided on the side wall of the cylindrical portion of the inner tube 12 and protruding outward from the side wall.

[0097] As shown in Figure 2, the fourth gas nozzle 343b injects inert gas toward the upstream region between the area outside the center C1 of the wafer 200 and the peripheral edge of the wafer 200 on the side where the fourth gas nozzle 343b is located. Specifically, in Figure 2, the injection direction of the fourth gas nozzle 343b toward the center C1 of the wafer 200 is illustrated by a dotted line. However, the injection direction of the fourth gas nozzle 343b can also be configured such that the injection direction does not intersect the virtual vertical plane A downstream and is directed toward the upstream side of the center C1 of the wafer 200, as illustrated by the dashed line in Figure 2. In this disclosure, the injection direction of the fourth gas nozzle 343b is arbitrary.

[0098] The fourth gas nozzle 343b is provided adjacent to one of the pair of third gas nozzles 343a1, 343a2, the upper one in Figure 2. In this specification, "nozzles adjacent to each other" also includes cases where an exhaust port is provided between adjacent nozzles.

[0099] Furthermore, as shown in Figure 2, the processing chamber 201 has a sub-exhaust slit 238 between the third gas nozzles 343a1, 343a2 and the fourth gas nozzle 343b. In this disclosure, the sub-exhaust slit 238 between the third gas nozzles 343a1, 343a2 and the fourth gas nozzle 343b is not mandatory. Also, in this embodiment, the fourth gas nozzle 343b is positioned closer to the main exhaust slit 236 than the third gas nozzles 343a1, 343a2. In this disclosure, the fourth gas nozzle 343b may be further from the main exhaust slit 236 than the third gas nozzles 343a1, 343a2.

[0100] As shown in Figure 5, the fourth gas nozzle 343b has an upper injection hole 356 that opens to correspond to at least one substrate, excluding the uppermost one, among the multiple substrates housed in the upper dummy region TSD. The fourth gas nozzle 343b also has a lower injection hole 357 that opens to correspond to at least two substrates, excluding the lowermost one, among the multiple substrates housed in the lower dummy region BSD.

[0101] In this disclosure, the upper injection hole 356 may be located at the top. Also, in this disclosure, the lower injection hole 357 may be located at the bottom. Furthermore, in this disclosure, the lower injection hole 357 may be opened to correspond to only one substrate.

[0102] (Diameter of the injection hole of the fourth gas nozzle 343b) In this embodiment, the diameter of the injection hole of the fourth gas nozzle 343b is preferably 0.8 mm or more and 3.0 mm or less. By having a hole diameter of 0.8 mm or more and 3.0 mm or less, it is possible to achieve in-plane uniformity of approximately 0.1% on the bottom side and in-plane uniformity of approximately 0.2% on the top side.

[0103] If the diameter of the injection hole of the fourth gas nozzle 343b is less than 0.8 mm, there is a concern that gas may easily leak from the base of the nozzle due to increased internal pressure. Also, if the diameter of the hole exceeds 3.0 mm, there is a concern that the gas that has risen within the nozzle may be released upward rather than horizontally due to inertia. Furthermore, the pressure difference between the top and bottom of the nozzle, i.e., the difference in the amount of gas ejected, tends to become large.

[0104] (In-plane uniformity) Here, the method for measuring in-plane uniformity in this embodiment will be described. First, 15 measurement points are set on the wafer to be measured. The 15 measurement points include the center of the wafer and 14 measurement points that differ from each other in the radial direction from the center of the wafer or in distance from the center.

[0105] The film thickness at each of the 15 measurement points is then measured using a known method such as spectroscopic ellipsometry. The average film thickness is then calculated from these 15 measurements. The in-plane uniformity [%] of the wafer being measured can then be calculated using the following formula, which utilizes the maximum, minimum, and average values ​​of the 15 measurements. In-plane uniformity [%] = (maximum value - minimum value) / average value × 100 In this definition, in-plane uniformity is a non-negative number, and the closer it is to 0, the better the uniformity.

[0106] (Diameter of the injection hole of the fourth gas nozzle 343b) Next, the diameter of the injection hole of the fourth gas nozzle 343b will be described. Here, if the internal pressure of the fourth gas nozzle 343b has a significant impact on process performance, for example, gas leakage from the base of the fourth gas nozzle 343b can easily cause fluctuations in the gas concentration at the bottom inside the processing chamber 201. In order to suppress the impact of the internal pressure of the fourth gas nozzle 343b on process performance, the hole diameter of the fourth gas nozzle 343b is adjustable in this embodiment.

[0107] Specifically, the diameter of the injection hole of the fourth gas nozzle 343b can be set to 0.8 mm or more and 3.0 mm or less. By setting the hole diameter to 0.8 mm or more and 3.0 mm or less, an in-plane uniformity of approximately 0.1% can be achieved for the bottom-side product wafer and approximately 0.2% for the top-side product wafer.

[0108] If the nozzle diameter is less than 0.8 mm, there is a concern that the increased internal pressure of the nozzle may cause gas to leak easily from the base of the nozzle. On the other hand, if the nozzle diameter exceeds 3.0 mm, there is a concern that the gas that has risen within the nozzle may be released upward rather than horizontally due to inertia. In addition, the pressure difference between the top and bottom of the nozzle, i.e., the difference in the amount of gas discharged, tends to become larger.

[0109] (Control Unit) Next, the control unit 280 will be described with reference to Figure 7. Figure 7 is a block diagram showing the substrate processing apparatus 10, and the control unit 280 (i.e., the controller) of the substrate processing apparatus 10 is configured as a computer. This computer is equipped with a CPU (Central Processing Unit) 121a, RAM (Random Access Memory) 121b, storage device 121c, and I / O ports 121d.

[0110] The RAM 121b, storage device 121c, and I / O port 121d are configured to exchange data with the CPU 121a via the internal bus 121e. An input / output device 122, configured as, for example, a touch panel, is connected to the control unit 280.

[0111] The storage device 121c is composed of, for example, flash memory, an HDD (Hard Disk Drive), etc. The storage device 121c contains, in a readable format, control programs that control the operation of the circuit board processing device, and process recipes that describe the procedures and conditions for circuit board processing, as described later.

[0112] The process recipe is a combination of steps in the substrate processing process described later, which are executed by the control unit 280 to obtain a predetermined result, and functions as a substrate processing program. Hereinafter, the process recipe, control program, etc., will be collectively referred to simply as the program.

[0113] In this specification, the term "program" may include only a process recipe, only a control program, or both. RAM121b is configured as a memory area (i.e., a work area) where programs and data read by CPU121a are temporarily held.

[0114] I / O port 121d is connected to the MFCs 320a to 320i, valves 330a to 330i, pressure sensor 245, APC valve 244, vacuum pump 246, heater 207, temperature sensor, rotary mechanism 267, elevator 115, etc.

[0115] The CPU 121a is configured to read and execute a control program from the storage device 121c, and to read a process recipe from the storage device 121c in response to input of operation commands from the input / output device 122, etc.

[0116] The CPU 121a is configured to control the flow rate adjustment operations of various gases by the MFCs 320a to 320i, the opening and closing operations of valves 330a to 330i, and the opening and closing operations of the APC valve 244 in accordance with the contents of the read process recipe. The CPU 121a is also configured to control the pressure adjustment operations of the APC valve 244 based on the pressure sensor 245, the starting and stopping of the vacuum pump 246, and the temperature adjustment operations of the heater 207 based on the temperature sensor. Furthermore, the CPU 121a is configured to control the rotation and rotation speed adjustment operations of the boat 217 by the rotating mechanism 267, and the raising and lowering operations of the boat 217 by the elevator 115.

[0117] The control unit 280 is not limited to being configured as a dedicated computer; it may also be configured as a general-purpose computer. For example, the control unit 280 of this embodiment can be configured by preparing an external storage device 123 containing the above-mentioned program and installing the program on a general-purpose computer using this external storage device 123. Examples of external storage devices include magnetic disks such as hard disks, optical disks such as CDs, magneto-optical disks such as MOs, and semiconductor memory such as USB memory.

[0118] <Substrate Processing Method> Next, a substrate processing method using the substrate processing apparatus 10 according to this embodiment will be described with reference to Figure 8. In this embodiment, as an example of a semiconductor device manufacturing process, a cycle processing method in which a film is processed by alternately supplying a raw material gas and a reaction gas to the processing chamber 201 will be described.

[0119] In the cyclic process, silicon (Si) source gas is used as an example of a source, and nitrogen (N2)-containing gas is used as a reactant, thereby forming a Si nitride film (Si3N4 film, hereinafter also called SiN film) on the substrate.

[0120] The SiN film is formed by performing the film formation process 1 in step S3, film formation process 2 in step S4, film formation process 3 in step S5, and film formation process 4 in step S6 in step 8, in a non-simultaneous cycle, one or more predetermined times.

[0121] Film deposition process 1 is a process of supplying a raw material gas to the wafer 200 in the inner tube 12. Film deposition process 2 is an exhaust process to remove the remaining raw material gas from the inner tube 12. Film deposition process 3 is a process of supplying an N2-containing reaction gas to the wafer 200 in the inner tube 12. Film deposition process 4 is an exhaust process to remove the remaining reaction gas from the inner tube 12.

[0122] First, in step S1 in Figure 8, the wafer 200 is loaded into the boat 217. By moving the boat 217 into the inner tube 12, the substrate is housed inside the cylindrical portion of the inner tube 12. Next, in step S2 in Figure 8, after moving the boat 217 into the inner tube 12, the pressure and temperature inside the inner tube 12 are adjusted. Then, the four steps of the film deposition process 1 to 4 are executed sequentially. Each step will be described in detail below.

[0123] (Film forming process 1) In the film deposition process 1, in step S3 in Figure 8, the first raw material gas is injected toward the wafer 200 using the first gas nozzles 340a, 340b, 341a, and 341b, while the injected raw material gas is exhausted to the outside of the cylindrical section using the main exhaust slit 236 and two sub-exhaust slits 238.

[0124] Examples of the first raw material gas supplied from the gas supply pipe 310a include Si source gas. Alternatively, a Si and halogen-containing gas can be used as the first raw material gas. Examples of Si and halogen-containing gases include inorganic chlorosilane gases such as tetrachlorosilane (SiCl4, abbreviated as STC) gas, hexachlorodisilane (Si2Cl6, abbreviated as HCDS) gas, and octachlorotrisilane (Si3Cl8, abbreviated as OCTS) gas. One or more of these can be used as the Si and halogen-containing gas. The first raw material gas corresponds to the first raw material in this disclosure. Note that in this disclosure, the first raw material is not limited to a gas, but may be a liquid substance such as a mist.

[0125] Furthermore, from the upstream side, an assist gas, such as N2, is injected toward the wafer 200 using the second gas nozzle 342c2, the fifth gas nozzle 342a2, and the seventh gas nozzle 342a1. In other words, in this embodiment, the seventh gas nozzle 342a1 supplies the assist gas when the first raw material gas is supplied from the first gas nozzles 340a, 340b, 341a, and 341b. Also, from the downstream side, an inert gas, such as N2, is injected toward the wafer 200 using the third gas nozzles 343a1, 343a2, and the fourth gas nozzle 343b.

[0126] (Film forming process 2) In the film formation process 2, the supply of the first raw material gas and carrier gas is stopped. By controlling the exhaust pump, such as the vacuum pump 246, and the APC valve 244, the reaction tube 203 is evacuated to a predetermined pressure (i.e., vacuum). As shown in Figure 9, the supply of assist gas from the second gas nozzle 342c2 and the fifth gas nozzle 342a2, and the inert gas from the third gas nozzles 343a1, 343a2, and the fourth gas nozzle 343b is continued.

[0127] Furthermore, the purging effect is enhanced by increasing the flow rate of N2 gas from the seventh gas nozzle 342a1. In addition, in the film deposition process 2, supplying an inert gas, such as the N2 gas used as a carrier gas, into the inner tube 12 as a purge gas further enhances the effect of exhausting residual raw material gas. At the end of the film deposition process 2, the flow rate of N2 gas from the seventh gas nozzle 342a1 is reduced to the original flow rate.

[0128] (Film forming process 3) In the film formation process 3, a reaction gas, which is the second raw material gas, is supplied into the inner tube 12. As the reaction gas, which is the reactant, for example, a Si-free gas, an oxidizing gas, or a reducing gas such as hydrogen (H2) can be used. Alternatively, for example, an N2-containing gas can be used as the reaction gas.

[0129] In this embodiment, for example, ammonia (NH3) gas is used as the second raw material gas supplied from the gas supply pipe 310c. The NH3 gas and carrier gas are supplied into the inner pipe 12 while being exhausted from a plurality of exhaust slits. Upon supply of NH3 gas, the Si-containing film on the wafer 200 reacts with the NH3 gas. A SiN film is formed on the wafer 200 by this reaction. The second raw material gas corresponds to the second raw material in this disclosure. In this disclosure, the second raw material is not limited to a gas, but may be a liquid substance such as a mist.

[0130] In the film formation process 3, the supply of assist gas from the second gas nozzle 342c2, the seventh gas nozzle 342a1, and the fifth gas nozzle 342a2, and the supply of inert gas from the third gas nozzles 343a1, 343a2, and the fourth gas nozzle 343b continues. In other words, in this embodiment, the seventh gas nozzle 342a1 supplies assist gas when the second raw material gas is being supplied from the sixth gas nozzle 342c1.

[0131] (Film forming process 4) In the film formation process 4, after the film is formed, the reaction tube 203 is evacuated to a predetermined pressure (vacuum level) by controlling the exhaust pump such as the vacuum pump 246 and the APC valve 244. The supply of assist gas from the second gas nozzle 342c2 and the fifth gas nozzle 342a2, and the supply of inert gas from the third gas nozzles 343a1, 343a2, and the fourth gas nozzle 343b is continued.

[0132] Furthermore, the purging effect is enhanced by increasing the flow rate of N2 gas from the seventh gas nozzle 342a1. In addition, in the film deposition process 4, supplying an inert gas, such as the N2 gas used as a carrier gas, into the inner tube 12 as a purge gas further enhances the effect of exhausting the reaction gas of the remaining N2-containing gas from the inner tube 12. At the end of the film deposition process 4, the flow rate of N2 gas from the seventh gas nozzle 342a1 is reduced to the original flow rate.

[0133] In this embodiment, during film formation steps 1 to 4, the seventh gas nozzle 342a1 supplies assist gas when the first raw material gas is supplied from the first gas nozzles 340a, 340b, 341a, and 341b, or when the second raw material gas is supplied from the sixth gas nozzle 342c1. In this disclosure, the seventh gas nozzle 342a1 may also supply assist gas at times other than when the first raw material gas is supplied from the first gas nozzles 340a, 340b, 341a, and 341b, or when the second raw material gas is supplied from the sixth gas nozzle 342c1.

[0134] Then, the above-described film deposition steps 1 to 4 constitute one cycle, and in step S7 in Figure 8, by performing the cycle of film deposition steps 1 to 4 a predetermined number of times, a SiN film of a predetermined thickness can be formed on the wafer 200. In this embodiment, film deposition steps 1 to 4 are repeated multiple times. In this disclosure, film deposition steps 1 to 4 may be performed one at a time without being repeated.

[0135] After the above-described film formation process is completed, in step S8 in Figure 8, the pressure inside the inner tube 12 is returned to normal pressure (i.e., atmospheric pressure). Specifically, for example, an inert gas such as N2 gas is supplied into the inner tube 12 and exhausted. This purges the inside of the inner tube 12 with the inert gas, removing any remaining gases from inside the inner tube 12. Subsequently, the atmosphere inside the inner tube 12 is replaced with the inert gas, and the pressure inside the inner tube 12 is returned to normal pressure.

[0136] Then, in step S9 in Figure 8, when the wafer 200 is removed from the inner tube 12, the substrate processing according to this embodiment is completed. The above series of steps constitutes the method for manufacturing a semiconductor device according to this embodiment.

[0137] (Analysis example) Next, the results of measuring the in-plane uniformity of a product wafer obtained by a substrate processing method performed using the substrate processing apparatus 10 according to this embodiment will be explained as an analysis example, along with the results of a comparative example. The substrate processing apparatus according to the comparative example differs from the substrate processing apparatus 10 according to this embodiment in that it does not have a fourth gas nozzle 343b. The configuration of the substrate processing apparatus according to the comparative example is the same as that of the substrate processing apparatus of this embodiment, except for the fourth gas nozzle 343b.

[0138] In Figures 10(A) and 10(B), the maximum value among the 15 film thicknesses obtained by measurement is represented by the upper white circle data point. The minimum value is represented by the lower, relatively small black circle data point in Figures 10(A) and 10(B). That is, in Figures 10(A) and 10(B), the difference in film thickness between the maximum and minimum values ​​of the product wafer corresponding to each position on the horizontal axis is illustrated by the length between the upper white circle data point and the lower, relatively small black circle data point. Furthermore, the average value of the 15 film thicknesses is represented by the relatively large black circle data point between the maximum and minimum values ​​in Figures 10(A) and 10(B).

[0139] As shown in Figure 10(A), in the comparative example, the film thickness difference between the top product wafer in the upper dummy region TSD, and between the bottom product wafer and the second-to-bottom product wafer in the lower dummy region BSD is relatively large. On the other hand, as shown in Figure 10(B), in this embodiment, the film thickness difference between the top product wafer in the upper dummy region TSD, and between the bottom product wafer and the second-to-bottom product wafer in the lower dummy region BSD is reduced compared to the comparative example.

[0140] Regarding the in-plane uniformity of the bottommost product wafer in the lower dummy region BSD, it was 1.0% in the comparative example, but in this embodiment, it was reduced to 0.2%, a decrease of 0.8 points compared to the comparative example. Similarly, regarding the in-plane uniformity of the topmost product wafer in the upper dummy region TSD, it was 0.5% in the comparative example, but in this embodiment, it was reduced to 0.1%, a decrease of 0.4 points compared to the comparative example. In other words, in this embodiment, the in-plane uniformity of the multiple wafers 200 located at the edge on the side dummy region side among the multiple wafers 200 housed in the product region P was 0.2% or less.

[0141] Furthermore, in the analysis example, the interplane uniformity of the entire product wafer in this embodiment was equivalent to that of the comparative example. In other words, it was found that this embodiment allows for adjustment of the in-plane uniformity of the product wafer at the edges while ensuring interplane uniformity of the entire product wafer.

[0142] (Effects and Benefits) According to this embodiment, one or more of the following effects can be obtained.

[0143] In the substrate processing apparatus 10 according to this embodiment, the inert gas is directly supplied to the product wafer at the edge by the fourth gas nozzle 343b, which supplies inert gas only to the side dummy region. Therefore, even if the product wafer at the edge is thickened, the film thickness can be efficiently reduced. As a result, the in-plane uniformity of the product wafer at the edge can be locally improved among the multiple product wafers arranged in the product region P.

[0144] In particular, in this embodiment, the fourth gas nozzle 343b, provided downstream of the gas flow on the substrate, is combined with the second gas nozzle 342c2 and the fifth gas nozzle 34a2, provided upstream, thereby enabling independent control of the in-plane uniformity of the top product wafer, the in-plane uniformity of the bottom product wafer, and the inter-plane uniformity of the entire product wafer.

[0145] Furthermore, in this embodiment, by positioning the fourth gas nozzle 343b downstream, the influence on the entire wafer can be reduced. That is, since inert gas is injected only onto the product wafer at the edges from the fourth gas nozzle 343b, the influence on the gas injected from other nozzles to adjust the inter-plane uniformity of the entire product wafer can be reduced. The effects of the semiconductor device manufacturing method and the substrate processing program using the substrate processing apparatus 10 according to this embodiment are the same as those of the substrate processing apparatus 10.

[0146] Furthermore, in this embodiment, both the second gas nozzle 342c2 and the third gas nozzles 343a1 and 343a2 are provided, and the fourth gas nozzle 343b is positioned downstream of the center of the substrate in the flow of the first raw material gas. The in-plane uniformity of the entire product wafer is controlled by both the second gas nozzle 342c2 positioned upstream and the third gas nozzles 343a1 and 343a2 positioned downstream. Therefore, the reliability of in-plane uniformity control at the edges of the product wafer by the fourth gas nozzle 343b can be improved.

[0147] Furthermore, in this embodiment, the substrate processing apparatus further includes a fifth gas nozzle 34a2 positioned upstream of the flow of the first raw material gas from the center of the substrate, and having an injection hole that supplies assist gas only to the substrate in the lower dummy region BSD. The second gas nozzle 342c2 also has an injection hole that supplies assist gas only to the substrate in the upper dummy region TSD. As a result, the in-plane uniformity of the top-side product and the in-plane uniformity of the product wafer on the wafer bottom side can be controlled independently.

[0148] Furthermore, in this embodiment, the substrate processing apparatus further includes a sixth gas nozzle 342c1 for supplying a second raw material gas and a seventh gas nozzle 342a1 for supplying assist gas from the upstream side. The seventh gas nozzle 342a1 can dilute the first raw material gas and the second raw material gas, thereby improving the supply efficiency of each raw material gas. In addition, the seventh gas nozzle 342a1 can improve the gas displacement during the film formation process and suppress the return flow of gas that has left the supply buffer 222 back to the supply buffer 222 due to vortices or turbulence in the processing chamber 201.

[0149] Furthermore, in this embodiment, a pair of third gas nozzles 343a1 and 343a2 are provided on both sides of a straight line connecting the main exhaust port and the center of the substrate. As a result, inert gas can be efficiently supplied into the processing chamber 201, thereby suppressing the generation of vortices within the processing chamber and reducing the overall amount of nitrogen gas used.

[0150] Furthermore, in this embodiment, the seventh gas nozzle 342a1 supplies assist gas when the first raw material gas is supplied from the first gas nozzles 340a, 340b, 341a, and 341b, or when the second raw material gas is supplied from the sixth gas nozzle 342c1. This further improves the supply efficiency of the raw material gas, the gas replacement efficiency, and the suppression of return flow.

[0151] Furthermore, in this embodiment, the sixth gas nozzle 342c1 and the seventh gas nozzle 342a1 are arranged so as to sandwich the first gas nozzles 340a, 340b, 341a, and 341b. The seventh gas nozzle 342a1 supplies assist gas when the first raw material gas, which is a Group 14 element raw material gas, is being supplied from the first gas nozzles 340a, 340b, 341a, and 341b. This makes it possible to further improve the supply efficiency of the raw material gas, improve gas substitutionability, and suppress return flow.

[0152] Furthermore, in this embodiment, the fourth gas nozzle 343b is positioned downstream of the flow of the first raw material gas and outside the virtual vertical plane A. The fourth gas nozzle 343b also injects inert gas toward an upstream region located between the periphery on the side of the wafer 200 where the fourth gas nozzle 343b is positioned and the center C1 of the wafer 200, which is outside the center C1 of the wafer 200. This maximizes the wafer thinning effect of the fourth gas nozzle 343b.

[0153] Furthermore, in this embodiment, partition plates are provided inside the processing chamber 201 on the side surfaces below the lower dummy region BSD of the first gas nozzles 340a, 340b, 341a, and 341b, protruding from the side and obstructing the vertical flow of gas. As a result, the flow rate of the exhausted raw material gas is more evenly distributed, improving the inter-plane uniformity of the film between the surfaces of the multiple wafers 200.

[0154] Furthermore, in this embodiment, the fourth gas nozzle 343b is provided adjacent to one of the pair of third gas nozzles 343a1 and 343a2. The processing chamber 201 also has a sub-exhaust slit 238 between the third gas nozzles 343a1 and 343a2 and the fourth gas nozzle 343b. As a result, the flow rate of the exhausted raw material gas is more equalized, improving the inter-plane uniformity of the film between the surfaces of the multiple wafers 200.

[0155] Furthermore, in this embodiment, the opening width of one main exhaust slit 236 along the circumferential direction of the cylindrical portion narrows along the axial direction of the cylindrical portion as it moves from the opposite side of the main exhaust port 230 toward the main exhaust port 230 (i.e., from the top side toward the bottom side). Also, the opening width of each of the two sub-exhaust slits 238 along the circumferential direction of the cylindrical portion narrows along the axial direction of the cylindrical portion as it moves from the opposite side of each of the pair of sub-exhaust ports toward the pair of sub-exhaust ports. As a result, the flow rate of the exhausted raw material gas is more evenly distributed between the wafers 200 stacked in multiple stages along the axial direction, thereby improving the inter-plane uniformity of the film between the surfaces of the multiple wafers 200.

[0156] Furthermore, in this embodiment, a member such as a fin, which serves as an exhaust flow rate adjustment section, may be provided on a part of the side wall of the processing chamber 201 forming the main exhaust section, projecting outward from the side wall, with the length of the projection decreasing as it moves from the opposite side of the exhaust port toward the exhaust port along the vertical direction. The exhaust flow rate adjustment section suppresses the flow rate of the raw material gas exhausted from the bottom side near the main exhaust port and the sub-exhaust port so that the difference between it and the flow rate of the raw material gas exhausted from the top side becomes small. As a result, the flow rate of the exhausted raw material gas is equalized between wafers 200 stacked in multiple stages along the vertical direction. Consequently, the inter-plane uniformity of the film between the surfaces of the multiple wafers 200 is improved. In addition, there is no need to process the side wall of the cylindrical section so that the opening width of the slit narrows as it moves from the opposite side of the exhaust port toward the exhaust port along the axial direction.

[0157] Furthermore, in this embodiment, the in-plane uniformity of the entire product wafer is controlled by both the second gas nozzle 342c2 located upstream and the third gas nozzles 343a1 and 343a2 located downstream. In addition, the fourth gas nozzle 343b is positioned closer to the main exhaust port than the third gas nozzles 343a1 and 343a2. Therefore, the reliability of in-plane uniformity control at the edges of the product wafer by the fourth gas nozzle 343b can be further improved.

[0158] Furthermore, in this embodiment, the fourth gas nozzle 343b has an upper injection hole that opens corresponding to at least one substrate, excluding the uppermost of the multiple substrates housed in the upper dummy region TSD. The fourth gas nozzle 343b also has a lower injection hole that opens corresponding to at least two substrates, excluding the lowermost of the multiple substrates housed in the lower dummy region BSD. As a result, excessive dilution of the source gas in the upper dummy region TSD and the lower dummy region BSD is suppressed. In addition, diffusion of active species across the side dummy region and the product region P can be reduced. As a result, inter-plane uniformity can be further improved and stabilized.

[0159] Furthermore, in this embodiment, the third gas nozzles 343a1 and 343a2 include a plurality of horizontal injection holes that open substantially parallel to the surface of the substrate, and an inclined injection hole that is positioned higher than the uppermost horizontal injection hole among the plurality of horizontal injection holes and opens diagonally upward. This further reduces the diffusion of active species across the upper dummy region TSD and the product region P.

[0160] Furthermore, in this embodiment, the first gas nozzles 340a, 340b, 341a, and 341b have three or more injection holes arranged in a direction substantially parallel to the surface of the substrate. Therefore, inert gas can be efficiently supplied into the processing chamber 201, thereby suppressing the generation of vortices within the processing chamber 201.

[0161] Furthermore, in this embodiment, the first gas nozzles 340a, 340b, 341a, and 341b are nozzle arrays in which multiple straight circular tubes are arranged along the circumferential direction of the processing chamber 201. Therefore, the processing gas can be efficiently supplied in a planar manner over a wide angle, thereby suppressing the generation of vortices within the processing chamber 201.

[0162] Furthermore, in this embodiment, the in-plane uniformity in at least one of the top and bottom product wafers is 0.2% or less. As a result, all product wafers meet the required in-plane uniformity, and a high yield can be achieved.

[0163] <Other aspects of this disclosure> Although this disclosure has been described in accordance with the embodiments disclosed above, the descriptions and drawings that constitute part of this disclosure should not be understood as limiting this disclosure. This disclosure is not limited to the embodiments described above and can be modified in various ways without departing from its essence.

[0164] (First variation) For example, in this embodiment, the position of the fourth gas nozzle 343b is exemplified as being on the downstream side, but as shown in Figure 11, in this disclosure, the position of the fourth gas nozzle 343b is not limited to the downstream side, but may also be on the upstream side. The other configurations of the substrate processing apparatus according to the first modified example are the same as in this embodiment, so a redundant explanation is omitted.

[0165] As in the first modified example, even with the fourth gas nozzle 343b positioned upstream, it is possible to locally improve the in-plane uniformity of the product wafers at the edges among the multiple product wafers arranged in the product region P, similar to the case of this embodiment. Furthermore, other effects of the substrate processing apparatus according to the modified example are the same as in the case of this embodiment.

[0166] (Second variation) Furthermore, the substrate processing apparatus in this disclosure can also be applied to other processes, such as oxidation processes. For example, in the modified example where an oxidation process is performed, the first gas nozzles 340a, 340b, 341a, 341b and the sixth gas nozzle 342c1 may be arranged so as to sandwich the seventh gas nozzle 342a1 from both sides. The type of gas injected from each nozzle may also be different from that in this embodiment.

[0167] Specifically, for example, nozzle 342a1 in Figure 11 was the seventh gas nozzle 342a1 in this embodiment, but in the second modified example, it functions as the first gas nozzles 340a, 340b, 341a, and 341b. Also, nozzles 340a, 340b, 341a, and 341b in Figure 11 were the first gas nozzles 340a, 340b, 341a, and 341b in this embodiment shown in Figure 2, but in the second modified example, they function as the seventh gas nozzle 342a1.

[0168] Nozzle 342a1, which functions as the first gas nozzle 340a, 340b, 341a, 341b, supplies one of the oxidizing gas and the reducing gas. Nozzle 342c1, which functions as the sixth gas nozzle 342c1, supplies the other of the oxidizing gas and the reducing gas.

[0169] As the oxidizing gas, for example, gases containing oxygen (O) and hydrogen (H) can be used. Examples of O and H-containing gases include water vapor (H2O gas), hydrogen peroxide (H2O2) gas, hydrogen (H2) gas + oxygen (O2) gas, H2 gas + ozone (O3) gas, etc. In addition to O and H-containing gases, for example, gases containing oxygen (O) can also be used as oxidizing agents. Examples of O-containing gases include O2 gas, nitrous oxide (N2O) gas, nitric oxide (NO) gas, nitrogen dioxide (NO2) gas, carbon monoxide (CO) gas, carbon dioxide (CO2) gas, etc. Note that gases containing O and H are also a type of O-containing gas. One or more of these can be used as the oxidizing agent.

[0170] In this specification, the joint mention of two gases, such as "H2 gas + O2 gas," refers to a mixed gas of H2 gas and O2 gas. When supplying a mixed gas, the two gases may be mixed (i.e., premixed) in the supply pipe before being supplied to the processing chamber 201, or the two gases may be supplied separately to the processing chamber 201 from different supply pipes and then mixed (postmixed) within the processing chamber 201.

[0171] For example, in the second modified example, nozzle 342a1, which is the first gas nozzle 340a, 340b, 341a, 341b, supplies O2 gas as the oxidizing gas. Also, nozzle 342c1, which is the sixth gas nozzle 342c1, supplies H2 gas as the reducing gas. Also, nozzles 340a, 340b, 341a, 341b, which is the seventh gas nozzle 342a1 in the second modified example, supply N2 gas as the assist gas. In the second modified example, all gases are supplied to the wafer simultaneously and continuously during the oxidation process.

[0172] Therefore, in the second modified example, the device is configured to generate oxygen-active species or hydroxyl radicals inside the processing chamber 201. In the modified example, the seventh gas nozzle 342a1 can be configured to supply an inert gas when at least one of the first gas nozzles 340a, 340b, 341a, 341b and the sixth gas nozzle 342c1 supplies gas during the oxidation process. The other configurations of the substrate processing apparatus according to the second modified example are the same as those in this embodiment, so a redundant explanation is omitted.

[0173] In addition, the above-described embodiments describe an example of forming a film using a batch-type substrate processing apparatus that processes multiple substrates at once. The disclosure is not limited to the above-described embodiments and can be suitably applied, for example, to forming a film using a single-wafer substrate processing apparatus that processes one or several substrates at once. Furthermore, the above-described embodiments describe an example of forming a film using a substrate processing apparatus having a hot-wall type processing furnace. The disclosure is not limited to the above-described embodiments and can be suitably applied to forming a film using a substrate processing apparatus having a cold-wall type processing furnace.

[0174] Even when using these substrate processing devices, each process can be carried out using the same processing procedures and conditions as described above, and the same effects as described above can be obtained.

[0175] Furthermore, in this disclosure, for example, the board processing that the CPU 121a reads and executes in the above embodiment may be executed by various processors other than the CPU. Examples of such processors include a Programmable Logic Device (PLD) such as an FPGA (Field-Programmable Gate Array) whose circuit configuration can be changed after manufacturing, and a dedicated electrical circuit which is a processor having a circuit configuration specifically designed to execute a particular process, such as an Application Specific Integrated Circuit (ASIC).

[0176] Furthermore, the board processing may be performed using one of these various processors, or using a combination of two or more processors of the same or different types (for example, multiple FPGAs, or a combination of a CPU and an FPGA). More specifically, the hardware structure of these various processors is an electrical circuit made up of circuit elements such as semiconductor elements.

[0177] Furthermore, while the above embodiments describe a configuration in which the board processing program is pre-stored (installed) in a storage device 121c such as a ROM or storage device, this disclosure is not limited thereto. The program may be provided in a form recorded on a computer-readable recording medium such as a CD-ROM (Compact Disk Read Only Memory), DVD-ROM (Digital Versatile Disk Read Only Memory), or USB (Universal Serial Bus) memory. Alternatively, the program may be provided in a form that can be downloaded from an external device via a network.

[0178] Furthermore, the present disclosure may be constructed by partially combining the configurations included in the multiple embodiments, modifications, and aspects disclosed above. In the present disclosure constructed by such combination, the processing procedures and processing conditions performed can be configured, for example, in the same way as the processing procedures and processing conditions described in the embodiments of this present invention. The present disclosure includes various embodiments not described above, and the technical scope of the present disclosure is determined solely by the inventive features of the claims that are reasonable from the above description. [Explanation of Symbols]

[0179] 10 Substrate Processing Equipment 200 wafers (substrates) 201 Processing Room 236 Main exhaust slit (main exhaust section) 340a First gas nozzle (first injection section) 340b First gas nozzle (first injection section) 341a First gas nozzle (first injection section) 341b First gas nozzle (first injection section) 342c2 Second gas nozzle (second injection section) 343a1 Third gas nozzle (third injection section) 343a2 Third gas nozzle (third injection section) 343b Fourth gas nozzle (fourth injection section) Product Area TSD Upper Dummy Area BSD Lower Dummy Area

Claims

1. (a) A processing chamber having a main exhaust section on the side, which houses a plurality of substrates arranged in the vertical direction, and which has a product area and a dummy area provided on at least one of the upper and lower sides of the product area, (b) A first injection unit extending in the vertical direction and positioned inside the processing chamber opposite the main exhaust unit, which supplies the first raw material toward the substrate housed in the product area and the dummy area, (c) A third injection unit provided downstream of the flow of the first raw material from the center of the substrate to be housed, which supplies an inert gas toward the substrate housed in the product region and the substrate housed in the dummy region, (d) A fourth injection unit that supplies inert gas only to the dummy region, It has, The substrate processing apparatus wherein the fourth injection unit is located closer to the main exhaust unit than the third injection unit.

2. The second injection unit is provided upstream of the flow of the first raw material from the center of the substrate housed inside the processing chamber, and supplies a greater amount of assist gas for diluting the first raw material toward the substrate housed in the dummy region than toward the substrate housed in the product region, The fourth injection unit is positioned downstream of the flow of the first raw material from the center of the substrate that houses it. The substrate processing apparatus according to claim 1.

3. A second injection unit provided upstream of the flow of the first raw material from the center of the substrate housed inside the processing chamber, which supplies a greater amount of assist gas for diluting the first raw material toward the substrate housed in the dummy region than toward the substrate housed in the product region, The system further comprises a fifth injection unit having injection holes that are positioned upstream of the flow of the first raw material from the center of the substrate to be housed, and that supply assist gas only to the substrate housed in the lower dummy region, which is the lower dummy region, The second injection unit has injection holes that supply assist gas only to the substrate housed in the upper dummy region, which is the upper dummy region. The substrate processing apparatus according to claim 1.

4. A sixth injection unit extends in the vertical direction and is positioned inside the processing chamber opposite the main exhaust unit, supplying a second raw material toward the substrate which is housed in at least the product area, A seventh injection unit extends in the vertical direction and is positioned upstream of the flow of the first raw material from the center of the substrate that houses it, and supplies an assist gas different from the first raw material and different from the second raw material toward the substrate that houses at least the product region, It further has, The substrate processing apparatus according to claim 1.

5. A pair of the third injection units are provided on both sides of a virtual vertical plane connecting the main exhaust unit and the center of the substrate that houses it. The substrate processing apparatus according to claim 1.

6. The seventh injection unit supplies assist gas when the first raw material is supplied from the first injection unit, or when the second raw material is supplied from the sixth injection unit. The substrate processing apparatus according to claim 4.

7. The sixth injection unit and the seventh injection unit are arranged so as to sandwich the first injection unit. The seventh injection unit supplies an assist gas when the first raw material, which is a Group 14 element raw material gas, is supplied from the first injection unit. The substrate processing apparatus according to claim 4.

8. The fourth injection unit is located downstream of the flow of the first raw material, at a position other than on the virtual vertical plane connecting the main exhaust unit and the center of the substrate to be housed, and injects an inert gas toward the center of the substrate to be housed, or toward an upstream region located between the periphery of the substrate to be housed and the center of the substrate. The substrate processing apparatus according to claim 1.

9. Below the lower dummy region, which is the lower dummy region of the first injection unit, a partition plate is provided to obstruct the vertical flow of gas. The substrate processing apparatus according to claim 1.

10. The opening width of the processing chamber of the main exhaust section, along the circumferential direction, narrows from the top to the bottom. Or, A portion of the side wall of the processing chamber forming the main exhaust section is provided with an exhaust flow rate adjustment section that protrudes outward from the side wall, and whose protruding length decreases as it goes from the top to the bottom. The substrate processing apparatus according to claim 1.

11. The fourth injection unit has an upper injection hole that opens in correspondence to at least one of the multiple substrates housed in the upper dummy region, which is the upper dummy region, excluding the uppermost substrate, and a lower injection hole that opens in correspondence to at least two of the multiple substrates housed in the lower dummy region, which is the lower dummy region, excluding the lowermost substrate. The substrate processing apparatus according to claim 1.

12. The third injection unit is provided, The third injection unit comprises a plurality of horizontal injection holes that open substantially parallel to the surface of the substrate in which it is housed, and an inclined injection hole that is positioned higher than the uppermost of the plurality of horizontal injection holes and opens diagonally upward. The substrate processing apparatus according to claim 1.

13. The first injection unit has a plurality of injection holes arranged in a direction substantially parallel to the surface of the substrate in which it is housed. The substrate processing apparatus according to claim 1.

14. The first injection unit is a nozzle array in which a plurality of straight circular tubes are arranged along the circumferential direction of the processing chamber. The substrate processing apparatus according to claim 1.

15. The in-plane uniformity of the substrate located at the edge of the dummy area among the substrates housed in the product area is 0.2% or less. The substrate processing apparatus according to claim 1.

16. (1) A process of housing a plurality of substrates arranged vertically inside a processing chamber which has a product area and a dummy area provided on at least one of the upper and lower sides of the product area, and a main exhaust section on the side, (2) A step of supplying a first raw material to the substrate contained in the product area and the dummy area using a first injection unit that extends in the vertical direction and is positioned opposite the main exhaust unit inside the processing chamber, (3) A step of supplying an inert gas to the substrate housed in the product area and the substrate housed in the dummy area using a third injection unit provided inside the processing chamber downstream of the flow of the first raw material from the center of the substrate, (4) A step of supplying an inert gas only to the dummy area using the fourth injection unit, A substrate processing method including, The fourth injection unit in step (4) is positioned closer to the main exhaust unit than the third injection unit. Substrate processing method.

17. (A) A process of housing multiple substrates arranged vertically inside a processing chamber which has a product area and a dummy area provided above and below the product area, and a main exhaust section on the side, (B) A step of supplying a first raw material to the substrate contained in the product area and the dummy area using a first injection unit that extends in the vertical direction and is positioned opposite the main exhaust unit inside the processing chamber, (C) A step of supplying an inert gas to the substrate housed in the product area and the substrate housed in the dummy area using a third injection unit provided inside the processing chamber downstream of the flow of the first raw material from the center of the substrate, (D) A step of supplying an inert gas only to the dummy area using a fourth injection unit, A method for manufacturing a semiconductor device, including, The fourth injection unit in step (D) is positioned closer to the main exhaust unit than the third injection unit. A method for manufacturing a semiconductor device.

18. (α) A process in which a plurality of substrates are housed inside a processing chamber having a product area and a dummy area provided above and below the product area, and a main exhaust section on the side, arranged vertically. (β) A process of supplying a first raw material toward the substrate contained in the product region and the dummy region using a first injection unit that extends in the vertical direction and is positioned opposite the main exhaust unit inside the processing chamber, (γ) A process of supplying an inert gas to the substrate housed in the product region and the substrate housed in the dummy region using a third injection unit provided inside the processing chamber downstream of the flow of the first raw material from the center of the substrate, (δ) A process of supplying an inert gas only to the dummy region using the fourth injection unit, A board processing program that causes the processor to execute, The fourth injection unit of the (δ) treatment is positioned closer to the main exhaust unit than the third injection unit. PCB processing program.

19. (a) A processing chamber having a plurality of substrates arranged in a vertical direction, and comprising a product area and a dummy area provided above and below the product area, and having a main exhaust section on the side, (b) A first injection unit extending in the vertical direction and positioned inside the processing chamber opposite the main exhaust unit, which supplies the first raw material toward the substrate housed in the product area and the dummy area, (c) A third injection unit provided downstream of the flow of the first raw material from the center of the substrate to be housed, which supplies an inert gas toward the substrate housed in the product region and the substrate housed in the dummy region, (d) A fourth injection unit that supplies inert gas only to the dummy region, It has, The third injection section is provided on both sides of a virtual vertical plane connecting the main exhaust section and the center of the substrate in which it is housed. The fourth injection unit is provided adjacent to one of the pair of third injection units, The processing chamber is a substrate processing apparatus having a secondary exhaust section between the third injection section and the fourth injection section.

20. The fourth injection unit is positioned closer to the main exhaust unit than the third injection unit. The substrate processing apparatus according to claim 19.

21. (1) A process of housing a plurality of substrates arranged vertically inside a processing chamber which has a product area and a dummy area provided on at least one of the upper and lower sides of the product area, and a main exhaust section on the side, (2) A step of supplying a first raw material to the substrate contained in the product area and the dummy area using a first injection unit that extends in the vertical direction and is positioned opposite the main exhaust unit inside the processing chamber, (3) A step of supplying an inert gas to the substrate housed in the product area and the substrate housed in the dummy area using a third injection unit provided inside the processing chamber downstream of the flow of the first raw material from the center of the substrate, (4) A step of supplying an inert gas only to the dummy area using the fourth injection unit, A substrate processing method including, The third injection unit of step (3) is provided on both sides of a virtual vertical plane connecting the main exhaust unit and the center of the substrate that houses it. The fourth injection unit of step (4) is provided adjacent to one of the pair of third injection units, The processing chamber of step (1) above has a secondary exhaust section between the third injection section and the fourth injection section. Substrate processing method.

22. (A) A process of housing a plurality of substrates arranged vertically inside a processing chamber which has a product area and a dummy area provided on at least one of the upper and lower sides of the product area, and a main exhaust section on the side, (B) A step of supplying a first raw material to the substrate contained in the product area and the dummy area using a first injection unit that extends in the vertical direction and is positioned opposite the main exhaust unit inside the processing chamber, (C) A step of supplying an inert gas to the substrate housed in the product area and the substrate housed in the dummy area using a third injection unit provided inside the processing chamber downstream of the flow of the first raw material from the center of the substrate, (D) A step of supplying an inert gas only to the dummy area using a fourth injection unit, A method for manufacturing a semiconductor device, including, The third injection unit of step (C) is provided on both sides of a virtual vertical plane connecting the main exhaust unit and the center of the substrate that houses it. The fourth injection unit of step (D) is provided adjacent to one of the pair of third injection units, The processing chamber of step (A) has a secondary exhaust section between the third injection section and the fourth injection section. A method for manufacturing a semiconductor device.

23. (α) A process comprising housing a plurality of substrates arranged vertically inside a processing chamber which has a product area and a dummy area provided on at least one of the upper and lower sides of the product area, and a main exhaust section on the side, (β) A process of supplying a first raw material toward the substrate contained in the product region and the dummy region using a first injection unit that extends in the vertical direction and is positioned opposite the main exhaust unit inside the processing chamber, (γ) A process of supplying an inert gas to the substrate housed in the product region and the substrate housed in the dummy region using a third injection unit provided inside the processing chamber downstream of the flow of the first raw material from the center of the substrate, (δ) A process of supplying an inert gas only to the dummy region using the fourth injection unit, A substrate processing program that includes, The third injection unit of the (γ) treatment is provided on both sides of a virtual vertical plane connecting the main exhaust unit and the center of the substrate that houses it. The fourth injection unit of the (δ) process is provided adjacent to one of the pair of third injection units, The processing chamber of the (α) process has a secondary exhaust section between the third injection section and the fourth injection section. PCB processing program.

24. (a) A processing chamber having a plurality of substrates arranged in a vertical direction, and comprising a product area and a dummy area provided above and below the product area, and having a main exhaust section on the side, (b) A first injection unit extending in the vertical direction and positioned inside the processing chamber opposite the main exhaust unit, which supplies the first raw material toward the substrate housed in the product area and the dummy area, (c) At least one of the following: a second injection unit provided upstream of the flow of the first raw material from the center of the substrate housed inside the processing chamber, which supplies more assist gas for diluting the first raw material toward the substrate housed in the dummy region than toward the substrate housed in the product region; and a third injection unit provided downstream of the flow of the first raw material from the center of the housed substrate, which supplies inert gas toward the substrate housed in the product region and the substrate housed in the dummy region. (d) A fourth injection unit that supplies inert gas only to the dummy region, (e) A sixth injection unit that extends in the vertical direction and is positioned inside the processing chamber opposite the main exhaust unit, and supplies a second raw material toward the substrate which is housed in the product area, (f) A seventh injection unit that extends in the vertical direction and is positioned upstream of the flow of the first raw material from the center of the substrate that is housed therein, and supplies an assist gas that is different from the first raw material and different from the second raw material toward the substrate that is housed in the product region, It has, The first injection unit and the sixth injection unit are arranged so as to sandwich the seventh injection unit from both sides. The first injection unit supplies one of the oxidizing gas and the reducing gas, and the sixth injection unit supplies the other of the oxidizing gas and the reducing gas, thereby enabling the generation of oxygen-active species or hydroxyl radicals inside the processing chamber. The substrate processing apparatus is configured such that the seventh injection unit can supply an inert gas when at least one of the first injection unit and the sixth injection unit is supplying gas.

25. (1) A process of housing a plurality of substrates arranged vertically inside a processing chamber which has a product area and a dummy area provided on at least one of the upper and lower sides of the product area, and a main exhaust section on the side, (2) A step of supplying a first raw material to the substrate contained in the product area and the dummy area using a first injection unit that extends in the vertical direction and is positioned opposite the main exhaust unit inside the processing chamber, (3) At least one of the following steps: using a second injection unit located inside the processing chamber upstream of the flow of the first raw material from the center of the substrate, to supply more assist gas for diluting the first raw material toward the substrates contained in the dummy region than toward the substrates contained in the product region; and using a third injection unit located downstream of the flow of the first raw material from the center of the substrate, to supply inert gas toward the substrates contained in the product region and the substrates contained in the dummy region; (4) A step of supplying an inert gas only to the dummy area using the fourth injection unit, (5) A step of supplying a second raw material toward the substrate contained in the product area, using a sixth injection unit that extends in the vertical direction and is positioned inside the processing chamber opposite the main exhaust unit, (6) A step of supplying an assist gas different from the first raw material and different from the second raw material to the substrate contained in the product region, using a seventh injection unit that extends in the vertical direction and is located upstream of the flow of the first raw material from the center of the substrate to be contained, A substrate processing method including, The first injection unit and the sixth injection unit are arranged so as to sandwich the seventh injection unit from both sides. The first injection unit supplies one of the oxidizing gas and the reducing gas, and the sixth injection unit supplies the other of the oxidizing gas and the reducing gas, thereby enabling the generation of oxygen-active species or hydroxyl radicals inside the processing chamber. The seventh injection unit is configured to supply an inert gas when at least one of the first injection unit and the sixth injection unit is supplying gas. Substrate processing method.

26. (A) A process of housing a plurality of substrates arranged vertically inside a processing chamber which has a product area and a dummy area provided on at least one of the upper and lower sides of the product area, and a main exhaust section on the side, (B) A step of supplying a first raw material to the substrate contained in the product area and the dummy area using a first injection unit that extends in the vertical direction and is positioned opposite the main exhaust unit inside the processing chamber, (C) At least one of the following steps: (C) Using a second injection unit located inside the processing chamber upstream of the flow of the first raw material from the center of the substrate, supplying a greater amount of assist gas to dilute the first raw material toward the substrate contained in the dummy region than toward the substrate contained in the product region; and using a third injection unit located downstream of the flow of the first raw material from the center of the substrate, supplying inert gas toward the substrate contained in the product region and the substrate contained in the dummy region; (D) A step of supplying an inert gas only to the dummy area using a fourth injection unit, (E) A step of supplying a second raw material toward the substrate contained in the product area, using a sixth injection unit that extends in the vertical direction and is positioned inside the processing chamber opposite the main exhaust unit, (F) A step of supplying an assist gas different from the first raw material and different from the second raw material to the substrate contained in the product region, using a seventh injection unit that extends in the vertical direction and is located upstream of the flow of the first raw material from the center of the substrate to be contained; A method for manufacturing a semiconductor device, including The first injection unit and the sixth injection unit are arranged so as to sandwich the seventh injection unit from both sides. The first injection unit supplies one of the oxidizing gas and the reducing gas, and the sixth injection unit supplies the other of the oxidizing gas and the reducing gas, thereby enabling the generation of oxygen-active species or hydroxyl radicals inside the processing chamber. The seventh injection unit is configured to supply an inert gas when at least one of the first injection unit and the sixth injection unit is supplying gas. A method for manufacturing a semiconductor device.

27. ​​(A) A process comprising housing a plurality of substrates arranged vertically inside a processing chamber which has a product area and a dummy area provided on at least one of the upper and lower sides of the product area, and a main exhaust section on the side, (B) A process of supplying a first raw material to the substrate contained in the product area and the dummy area using a first injection unit that extends in the vertical direction and is positioned opposite the main exhaust unit inside the processing chamber, (C) At least one of the following processes: using a second injection unit located inside the processing chamber upstream of the flow of the first raw material from the center of the substrate, to supply a greater amount of assist gas for diluting the first raw material toward the substrate contained in the dummy region than toward the substrate contained in the product region; and using a third injection unit located downstream of the flow of the first raw material from the center of the substrate, to supply inert gas toward the substrate contained in the product region and the substrate contained in the dummy region. (D) A process of supplying inert gas only to the dummy region using the fourth injection unit, (E) A process of supplying a second raw material toward the substrate contained in the product region, using a sixth injection unit that extends in the vertical direction and is positioned inside the processing chamber opposite the main exhaust unit, (F) A process of supplying an assist gas different from the first raw material and different from the second raw material to at least the substrate contained in the product region, using a seventh injection unit that extends in the vertical direction and is located upstream of the flow of the first raw material from the center of the substrate containing the substrate, A substrate processing program that includes, The first injection unit and the sixth injection unit are arranged so as to sandwich the seventh injection unit from both sides. The first injection unit supplies one of the oxidizing gas and the reducing gas, and the sixth injection unit supplies the other of the oxidizing gas and the reducing gas, thereby enabling the generation of oxygen-active species or hydroxyl radicals inside the processing chamber. The seventh injection unit is configured to supply an inert gas when at least one of the first injection unit and the sixth injection unit is supplying gas. PCB processing program.

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