Vapor deposition system

Abstract

The deposition system according to the embodiment of the present invention includes a reaction chamber, a gas supply unit for supplying a precursor in a gaseous state to the reaction chamber, a reactant supply unit for supplying a reactant to react with the precursor to the reaction chamber, and an exhaust unit for discharging exhaust from the reaction chamber, the gas supply unit including a sub-tank, a liquid flow controller, and a vaporizer connected in sequence, the precursor is filled in a liquid state in the sub-tank of the gas supply unit by an automatic filling system, and is supplied to the reaction chamber via the sub-tank, the liquid flow controller, and the vaporizer in sequence, the exhaust unit including a treatment process chamber to which a plasma pretreatment system is applied, a pump, and a scrubber, and the precursor can be stably supplied without replacing a canister, the life of the pump can be improved, and the efficiency of the scrubber can be increased. Therefore, by using the deposition system according to the embodiment of the present invention, the ease of maintenance and management of the facility can be improved from the viewpoint of mass production.

Description

Technical Field

[0001] The present invention relates to a vapor deposition system.

Background Art

[0002] As typical methods for forming a thin film on a substrate, there are Chemical Vapor Deposition (CVD) and Atomic Layer Deposition (ALD). In the CVD and ALD processes, various reactants are used to form a thin film on the substrate surface. In the process, liquid reactants generally undergo a phase change to a gaseous state and are supplied to the reaction chamber. After the vapor deposition process is completed, the process exhaust is discharged at the exhaust end. However, by using a vaporizer to increase the supply amount of the liquid reactant, the replacement cycle of the canister for supplying the liquid reactant becomes shorter, and the replacement time of the pump becomes shorter due to an increase in the process exhaust. In addition, since there is a problem that the vapor deposition equipment must be stopped when replacing the canister and the pump, it is necessary to improve the vapor deposition system for easy maintenance and management of the vapor deposition equipment from the perspective of mass production.

Summary of the Invention

Problems to be Solved by the Invention

[0003] The present invention has been made in view of the above conventional problems, and an object of the present invention is to provide a vapor deposition system that enables easy maintenance and management of vapor deposition equipment from the perspective of mass production.

Means for Solving the Problems

[0004] A vapor deposition system according to one aspect of the present invention comprises a reaction chamber, a first gas supply unit that supplies a first precursor in a gaseous state to the reaction chamber, a reactant supply unit that supplies a reactant that reacts with the first precursor to the reaction chamber, and an exhaust unit that discharges exhaust material from the reaction chamber. The first gas supply unit includes a first sub-tank, a first liquid flow controller, and a first vaporizer, which are sequentially connected. The first precursor is filled in liquid form into the first sub-tank of the first gas supply unit by a first automatic filling system and supplied to the reaction chamber sequentially via the first sub-tank, the first liquid flow controller, and the first vaporizer. The exhaust unit includes a processing chamber, a pump, and a scrubber to which a plasma pretreatment system is applied.

[0005] Another embodiment of the present invention provides a deposition system comprising: a reaction chamber; at least one gas supply unit that supplies at least one precursor in a gaseous state to the reaction chamber using an automatic filling system; a reactant supply unit that supplies a reactant to react with the precursor to the reaction chamber; and an exhaust unit that discharges exhaust material from the reaction chamber, wherein the at least one gas supply unit includes a sub-tank for storing the precursor; a vaporizer for supplying the precursor in a gaseous state to the reaction chamber; and a liquid flow controller for adjusting the amount of the precursor supplied by the vaporizer; and the exhaust unit includes a processing chamber, a pump, and a scrubber, wherein the processing chamber displaces the exhaust material through the pump after changing its chemical structure using a plasma pretreatment system.

[0006] A process system according to one aspect of the present invention includes at least one automatic filling system for automatically filling a sub-tank with a process material in a liquid state, a gas supply system for supplying the process material stored in the sub-tank to a reaction chamber in a gaseous state, and a plasma pretreatment system that operates to induce a plasma discharge and change the chemical structure of exhaust gas discharged from the reaction chamber, wherein the gas supply system operates a liquid flow controller and a vaporizer sequentially connected between the sub-tank and the reaction chamber, and the liquid flow controller adjusts the amount of the process material supplied to the vaporizer. [Effects of the Invention]

[0007] According to the deposition system of the present invention, instead of periodically replacing canisters, an automatic refill system (ARS) applied to the sub-tank can be used to maintain a constant supply of the liquid reaction solution. Furthermore, by applying a pre-plasma treatment system (PPS) to the exhaust section, the lifespan of the pump can be extended and the efficiency of the scrubber can be improved.

[0008] The diverse and beneficial advantages and effects of the present invention are not limited to those described above and will be more readily understood in the process of describing specific embodiments of the present invention. [Brief explanation of the drawing]

[0009] [Figure 1] This is a schematic block diagram of a vapor deposition system according to one embodiment of the present invention. [Figure 2a] This diagram illustrates the types of reaction chambers in a vapor deposition system according to one embodiment of the present invention. [Figure 2b] This diagram illustrates the types of reaction chambers in a vapor deposition system according to one embodiment of the present invention. [Figure 2c] This diagram illustrates the types of reaction chambers in a vapor deposition system according to one embodiment of the present invention. [Figure 3] This diagram illustrates the operation of a bubbler in a vapor deposition system according to one embodiment of the present invention. [Figure 4] This diagram illustrates the operation of a vaporizer in a vapor deposition system according to one embodiment of the present invention. [Figure 5] This is a schematic flowchart illustrating the operation of the automated filling system in a vapor deposition system according to one embodiment of the present invention. [Figure 6] This is a schematic diagram illustrating the exhaust process in a vapor deposition system according to one embodiment of the present invention. [Figure 7] This is a schematic flowchart illustrating the operation of the plasma pretreatment system in a deposition system according to one embodiment of the present invention. [Figure 8] This is a schematic block diagram of a vapor deposition system according to one embodiment of the present invention. [Figure 9] This is a schematic block diagram of a vapor deposition system according to one embodiment of the present invention. [Figure 10] This is a schematic block diagram of a vapor deposition system according to one embodiment of the present invention. [Modes for carrying out the invention]

[0010] Hereinafter, specific examples of embodiments for carrying out the present invention will be described in detail with reference to the drawings.

[0011] Figure 1 is a schematic block diagram of a vapor deposition system according to one embodiment of the present invention.

[0012] Referring to Figure 1, the deposition system 1 includes a reaction chamber 10, a gas supply unit 20, an exhaust unit 30, a main tank 40, and a reactant supply unit 50.

[0013] The vapor deposition system 1 according to this embodiment is a system for performing a chemical vapor deposition (CVD) and / or atomic layer deposition (ALD) process. The CVD process and the ALD process commonly supply precursors and reactants into the reaction chamber 10 to react, thereby proceeding with the process of depositing a thin film on a substrate.

[0014] The precursor exists in a liquid or solid state at normal temperature and is vaporized by a configuration included in the gas supply unit 20 and supplied to the reaction chamber 10 in a gaseous state. However, since this is only one embodiment, it is not limited, and the precursor may exist in a gaseous state at normal temperature. In the vapor deposition system 1 according to this embodiment, the precursor is a liquid reactant. As an example, the precursor is a metal organic precursor and is composed of group 3, 4, and 5 elements. However, since this is only one embodiment, it is not limited, and it may be composed of other elements according to the embodiment.

[0015] In a general vapor deposition process, as a vaporizer for phase-changing the precursor into a gaseous state, a bubbler and / or a vaporizer are used. As an example, the baking method is used to phase-change the precursor into a gaseous state, and a carrier gas is used to supply the gaseous precursor to the reaction chamber 10. On the other hand, it is also possible to cause a bubbling phenomenon with a carrier gas to vaporize the liquid precursor and supply the gaseous precursor to the reaction chamber 10. However, a vaporizer may be used to phase-change the liquid precursor into a gaseous state.

[0016] Which device among the above-described vaporizers is used depends on the vapor pressure of the liquid precursor. As an example, in the case of a precursor with a low vapor pressure, it is difficult to vaporize the liquid precursor using a bubbler, and it is necessary to use a vaporizer. On the other hand, in the case of a precursor with a high vapor pressure, the precursor can be vaporized only by the baking method.

[0017] On the other hand, when using a vaporizer to change the liquid precursor into a gaseous state, a larger amount of precursor is supplied to the reaction chamber 10 than when using a bubbler. The amount of precursor supplied to the reaction chamber 10 is controlled by a liquid mass flow controller.

[0018] Generally, the precursor supplied to the reaction chamber 10 is stored in a canister. As the process progresses, if the amount of precursor in the canister falls below a predetermined level, the canister needs to be replaced in order to continue the process. On the other hand, replacing the canister requires stopping the process equipment. As an example, during the downtime of the process equipment, a cleaning process to remove impurities from inside the piping is carried out along with the replacement of the canister.

[0019] Meanwhile, exhaust material is discharged to the exhaust end of the reaction chamber 10 during and / or after the deposition process is completed. For example, the exhaust material includes gaseous reactants that did not react during the deposition process and by-products after the reaction. The exhaust material readily undergoes a phase change to a solid state and accumulates in the pump 32 connected to the exhaust end of the reaction chamber 10, which can put a strain on it. As a result, the process equipment must be shut down in order to replace the worn-out pump.

[0020] In a vapor deposition system 1 according to one embodiment of the present invention, the reaction chamber 10 includes a vapor deposition chamber for carrying out a vapor deposition process. For example, the vapor deposition process is a chemical vapor deposition (CVD) and / or atomic layer deposition (ALD) process. However, this is only one embodiment and is not limited thereto, and the reaction chamber 10 of the vapor deposition system 1 according to one embodiment of the present invention includes a chamber for carrying out other processes in which gas injection is used. For example, the reaction chamber 10 includes a polishing process chamber for carrying out cleaning by injecting a cleaning gas after a CMP process, and an etching process chamber for removing at least a portion of the wafer and / or the element layer formed on the wafer using a plasma containing radicals and ions of the source gas. On the other hand, when carrying out processes other than the vapor deposition process, the gas supplied to the reaction chamber 10 is not limited to a precursor.

[0021] In the deposition system 1 according to this embodiment, the liquid precursor supplied to the reaction chamber 10 is stored in the main tank 40. The liquid precursor stored in the main tank 40 is then filled into the gas supply unit 20 by an Auto Refill System (ARS). For example, the Auto Refill System ARS operates between processes. For example, when the Auto Refill System ARS operates, a negative pressure is created in the piping between the main tank 40 and the gas supply unit 20 by a vacuum pump connected to the piping. The created negative pressure fills the gas supply unit 20 with an appropriate amount of liquid precursor. However, this is only one embodiment and is not limited thereto; the timing and method of operation of the Auto Refill System ARS may differ depending on the embodiment.

[0022] In the deposition system 1 according to this embodiment, the gas supply unit 20 includes a sub-tank 22, a liquid flow controller 23, and a vaporizer 24. As an example, the gas supply unit 20 further includes a filter 25 for filtering out liquid precursors that were not completely vaporized by the vaporizer 24. In addition, a plurality of valves for regulating the supply of precursors are arranged between and / or within the components of the gas supply unit 20. However, this is merely an embodiment and is not limited thereto, and the number and position of the valves can be determined in various ways as needed.

[0023] Sub-tank 22 stores the liquid precursor used in the process, which is filled from the main tank 40. For example, sub-tank 22 is a canister. The liquid flow controller 23 supplies the liquid precursor stored in sub-tank 22 to the vaporizer 24 at a constant rate per unit time. For example, the constant rate per unit time corresponds to a range of approximately 1g to 10g per minute. However, this is only one embodiment and is not limited to this, and may vary depending on the type of liquid precursor, the amount required to carry out the process, the number of substrates on which deposition occurs in one process, etc.

[0024] Meanwhile, the vaporizer 24 changes the liquid precursor into a gaseous state in order to supply it to the reaction chamber 10. The operation method of the vaporizer 24 is not limited to one, and it can operate in various ways depending on the embodiment to vaporize the liquid precursor. The gaseous precursor is supplied to the reaction chamber 10 via the filter 25.

[0025] As an example, the configuration of the gas supply unit 20 shown in Figure 1 corresponds to a case where a liquid precursor is vaporized using a vaporizer 24 and a liquid flow controller 23. In the deposition system 1 according to one embodiment of the present invention, the gas supply unit 20 includes a bubbler instead of a vaporizer 24 and a liquid flow controller 23. The bubbler is included as a separate component, but is not limited to this, and may be included in the sub-tank 22. The operation of the gas supply unit 20 according to one embodiment of the present invention will be described later.

[0026] The reactant supply unit 50 included in the deposition system 1 according to this embodiment supplies reactants to the reaction chamber 10 to form a thin film by reacting with a precursor. As an example, the supplied reactants include at least some of H2O, H2O2, O3, NH3, etc. However, this is only one embodiment and is not limited thereto, and the supplied reactants may differ depending on the embodiment.

[0027] In the deposition system 1 according to this embodiment, exhaust material is discharged to the exhaust end of the reaction chamber 10 during and / or after the deposition process is completed. The discharged exhaust material is then discharged from the deposition system 1 through the exhaust section 30. The exhaust section 30 includes a processing chamber 31, a pump 32, and a scrubber 33.

[0028] The exhaust from the deposition process passes through a pre-plasma treatment system (PPS) in the processing chamber 31, and is then discharged through a pump 32 and a scrubber 33. However, the arrangement of the processing chamber 31 is not limited to the configuration shown in Figure 1; the processing chamber 31 may be placed between the pump 32 and the scrubber 33. On the other hand, multiple processing chambers 31 may be installed, allowing the pre-plasma treatment system PPS to be applied repeatedly.

[0029] The plasma pretreatment system PPS applied to the exhaust in the processing chamber 31 supplies a reactive gas to the exhaust. For example, the reactive gas is O2. However, this is merely an embodiment and is not limited to that, and other reactive gases may be supplied depending on the embodiment. Metallic by-products contained in the exhaust react with the reactive gas to produce reactants such as zirconia (ZrO2). For example, zirconia is in powder form. However, reactants such as zirconia may accumulate on the inner wall of the piping, potentially causing problems by obstructing the discharge of exhaust.

[0030] In the deposition system 1 according to this embodiment, the plasma pretreatment system PPS induces a plasma discharge inside the processing chamber 31. Meanwhile, the plasma discharge improves the decomposition performance of the exhaust material from the deposition process and / or replaces it with a material that is more fluid and safe. As a result, the plasma pretreatment system PPS can extend the life of the pump 32 and improve the efficiency of the scrubber 33.

[0031] For example, when the plasma pretreatment system PPS is applied, the pump life increases by approximately 2 to 3 times compared to when it is not applied. For example, when the plasma pretreatment system PPS is not applied, the pump replacement cycle is 1 month, while when the plasma pretreatment system PPS is applied, the pump replacement cycle is 2 to 3 months. However, this is only one embodiment and is not limited to this, and the pump replacement cycle may vary depending on the process environment, the performance of the plasma pretreatment system PPS, the performance of the pump, etc. Furthermore, the increased pump life due to the application of the plasma pretreatment system PPS is either less than 2 times or more than 3 times the pump life when the plasma pretreatment system PPS is not applied.

[0032] In the deposition system 1 according to this embodiment, the exhaust material discharged to the exhaust end of the reaction chamber 10 contains substances in various states. The pump 32 plays the role of discharging the exhaust material using negative pressure. The scrubber 33 plays the role of dissolving and absorbing the gaseous exhaust gas from the exhaust material. However, this is only one embodiment and is not limited thereto, and the exhaust section 30 may further include additional configurations necessary for safely processing and discharging the exhaust material, by applying a combination of various methods.

[0033] Figures 2a to 2c illustrate the types of reaction chambers in a deposition system according to one embodiment of the present invention.

[0034] Referring to Figures 2a to 2c, in the deposition system according to this embodiment, the reaction chamber is a deposition chamber in which a deposition process to deposit a thin film onto the upper surface of a substrate takes place. On the other hand, deposition chambers are classified into batch type, semi-batch type, and single type depending on the number of substrates in which the process is carried out simultaneously. As an example, the substrate in which the deposition process is carried out is a wafer (Wa, Wb, Wc). However, depending on the embodiment, the object of the process is not limited to wafers (Wa, Wb, Wc). For example, instead of wafers (Wa, Wb, Wc), various other substrates, such as display mother substrates, may be the object of the process.

[0035] The deposition system according to this embodiment is applicable regardless of the type of reaction chamber. For example, conventionally, batch-type reaction chambers were mainly used to improve process speed, but recently, the use of single-type reaction chambers has been increasing for the accuracy of precision processes, making equipment maintenance and management even more important from the perspective of mass production. The deposition system according to this embodiment can further facilitate equipment maintenance and management and improve process efficiency.

[0036] Referring to Figure 2a, the reaction chamber 10a that carries out the process is of a batch type. For example, a batch-type reaction chamber 10a carries out the process on multiple wafers Wa simultaneously. For example, the gaseous precursor supplied to the reaction chamber 10a deposits a thin film onto the upper surface of wafers Wa arranged in a specific arrangement. However, the embodiment is not limited to the one shown in Figure 2a, and the internal configuration of the batch-type reaction chamber 10a may differ depending on the embodiment.

[0037] Referring to Figure 2b, the reaction chamber 10b that carries out the process is a semi-batch type. For example, a semi-batch type reaction chamber 10b carries out the process on multiple wafers Wb simultaneously. For example, the gaseous precursor supplied to the reaction chamber 10b deposits a thin film onto the upper surface of wafers Wb arranged in a specific arrangement. However, the internal configuration of the semi-batch type reaction chamber 10b is not limited to the embodiment shown in Figure 2b, and may differ depending on the embodiment.

[0038] For example, the number of wafers Wb processed simultaneously in the semi-batch type reaction chamber 10b is smaller than the number of wafers Wa processed simultaneously in the batch type reaction chamber 10a shown in Figure 2a. However, compared to the batch type reaction chamber 10a, the accuracy of the precision process is improved in the semi-batch type reaction chamber 10b.

[0039] Referring to Figure 2c, the reaction chamber 10c that carries out the process is a single type. As an example, a single-type reaction chamber 10c carries out the process one wafer Wc at a time. In terms of process speed, it is at a disadvantage compared to a batch-type reaction chamber 10a, but it is possible to uniformly deposit a thin film on the upper surface of the wafer Wc by utilizing high precision. However, it is not limited to the embodiment shown in Figure 2c, and the internal configuration of the single-type reaction chamber 10b may differ depending on the embodiment.

[0040] Figure 3 is a diagram illustrating the operation of a bubbler in a vapor deposition system according to one embodiment of the present invention.

[0041] Referring to Figure 3, in the deposition system according to this embodiment, the sub-tank 122 included in the gas supply unit 120 includes a bubbler B for vaporizing the liquid precursor LP and supplying it to the reaction chamber in the form of a gaseous precursor GP. On the other hand, the bubbler B is included in the gas supply unit 120 as a separate device from the sub-tank 122.

[0042] For example, the sub-tank 122 is filled with liquid precursor LP to a predetermined height H. Bubbler B injects transport gas G at a first height h1. For example, the first height h1 is lower than the predetermined height H to which the liquid precursor LP is filled. In other words, the transport gas G is injected directly into the liquid precursor LP. For example, the transport gas G is a gas such as N2 with low reactivity. However, this is merely an embodiment and is not limited thereto; a variety of transport gases G may be used depending on the embodiment.

[0043] Meanwhile, the injection of the transport gas G causes a bubbling phenomenon in the liquid precursor LP, and the liquid precursor LP vaporizes into a gaseous precursor GP. The gaseous precursor GP is supplied to the reaction chamber through piping. For example, the inlet of the piping from which the gaseous precursor GP escapes is located above the surface of the liquid precursor LP. However, this is merely an embodiment and is not limited thereto; depending on the embodiment, the inlet of the piping may be located close to the surface of the liquid precursor LP, or it may be arranged in a variety of ways that allow the gaseous precursor GP to escape.

[0044] The liquid precursor LP that exhibits the bubbling phenomenon is a substance having a predetermined vapor pressure. For example, in a deposition process using a liquid precursor LP with a vapor pressure of approximately 1 Torr or higher at 100°C, the liquid precursor LP can be vaporized using bubbler B. However, this is only one embodiment and is not limited to this; even in a deposition system utilizing a liquid precursor LP with a high vapor pressure, a vaporizer described later can be used instead of bubbler B to improve the supply rate.

[0045] Figure 4 is a diagram illustrating the operation of a vaporizer in a deposition system according to one embodiment of the present invention.

[0046] Referring to Figure 4, in the deposition system according to this embodiment, the gas supply unit 220 includes a liquid flow controller 223 and a vaporizer 224 together with the sub-tank 222. The liquid flow controller 223 adjusts the amount of liquid precursor LP supplied to the vaporizer 224. The vaporizer vaporizes the liquid precursor LP supplied from the liquid flow controller 223 and supplies it to the reaction chamber in the form of a gaseous precursor GP.

[0047] For example, the sub-tank 222 is filled with liquid precursor LP to a predetermined height H. To supply the liquid precursor LP to the liquid flow controller 223, the transport gas G is injected at a second height (h2) of the sub-tank 222. For example, the second height (h2) is higher than the predetermined height H to which the liquid precursor LP is filled. In other words, the transport gas G is injected onto the surface of the liquid precursor LP.

[0048] Meanwhile, a portion of the liquid precursor LP is supplied to the liquid flow controller 223 along the first pipe L1 by the injection of the transport gas G. For example, the inlet of the first pipe L1 is positioned at a third height h3 that is lower than a predetermined height H where the liquid precursor LP is filled. However, this is only one embodiment and is not limited thereto.

[0049] The liquid precursor LP is supplied to the vaporizer 224 along the second pipe L2 in an amount regulated by the liquid flow controller 223. Meanwhile, the gaseous precursor GP, which has undergone a phase change to a gaseous state using the vaporizer 224, is supplied to the reaction chamber along the third pipe L3. In other words, the precursor passing through the first pipe L1 and the second pipe L2 is the liquid precursor LP, and the precursor passing through the third pipe L3 is the gaseous precursor GP.

[0050] In the deposition system according to this embodiment, the liquid precursor LP utilizing the vaporizer 224 is a substance with a low vapor pressure. However, this is only one embodiment and is not limited thereto; the vaporizer 224 can also be used to increase the supply amount of the gaseous precursor GP regardless of the magnitude of the vapor pressure.

[0051] Referring to Figures 3 and 4, in the deposition system according to an embodiment of the present invention, the bubbler or vaporizer for vaporizing the precursor operates as a single, integrated system related to the other components. However, this is only one embodiment and is not limited thereto; it can also operate as a separate system independent of the operation of the other components. For example, the bubbler or vaporizer may be operated by a separate gas supply system.

[0052] Figure 5 is a schematic flowchart illustrating the operation of the automated filling system in a vapor deposition system according to one embodiment of the present invention.

[0053] Referring to Figure 5, in this embodiment, the deposition system is filled with liquid precursor from the main tank to the sub-tank by applying an automatic filling system. As an example, the automatic filling system checks whether the amount of liquid precursor in the sub-tank is greater than or equal to a predetermined amount (S100). The predetermined amount is the amount of liquid precursor required to proceed to the next step. However, this is only one embodiment and is not limited to this, and the sub-tank may be filled with more liquid precursor than the process margin as needed.

[0054] If the amount of liquid precursor in the sub-tank is less than a predetermined amount, the automatic filling system operates to fill the sub-tank with liquid precursor stored in the main tank (S110). For example, a vacuum pump is placed between the main tank and the sub-tank, and the liquid precursor is automatically filled using the negative pressure created by the vacuum pump. On the other hand, if the amount of liquid precursor in the sub-tank is greater than or equal to a predetermined amount, the deposition process described above proceeds (S120).

[0055] After the deposition process is completed (S130), it is checked whether to continue the deposition process (S140). If the deposition process is to continue, the process is repeated from step S100.

[0056] An automated filling system applied to a vapor deposition system according to one embodiment of the present invention proceeds with the vapor deposition process by filling a sub-tank with a liquid precursor instead of continuously replacing canisters. This improves process efficiency by utilizing the downtime required for canister replacement as process time.

[0057] Figure 6 is a schematic diagram illustrating the exhaust gas discharge process in a deposition system according to one embodiment of the present invention.

[0058] Referring to Figure 6, in the deposition system according to this embodiment, the exhaust material WP generated in the deposition process is discharged to the exhaust section 30 through the exhaust end of the reaction chamber. As an example, the exhaust section 30 includes a processing chamber 31 to which a plasma pretreatment system PPS is applied to alter the chemical structure of the exhaust material WP, a pump 32, and a scrubber 33.

[0059] In the deposition system according to this embodiment, the plasma pretreatment system decomposes and / or replaces the exhaust WP discharged from the reaction chamber to facilitate its discharge. For example, the plasma pretreatment system is applied to the exhaust WP in the processing chamber 31. However, the plasma pretreatment system is not limited to that applied to the deposition system according to this embodiment, and can be applied not only to the deposition process but also to other processes that discharge exhaust WP. For example, the plasma pretreatment system can also be applied to processes such as ashing, etching, cleaning, and annealing.

[0060] On the other hand, the exhaust WP before the plasma pretreatment system is applied consists of unreacted precursors and / or unreacted by-products. For example, the exhaust WP may be a substance with a relatively complex structure, such as zirconia. If it is discharged as is without the application of the plasma pretreatment system, it may put a strain on the pump 32 or reduce the lifespan of the pump 32 due to problems such as the accumulation of exhaust WP in the piping.

[0061] A plasma pretreatment system is applied to the processing chamber 31. The plasma pretreatment system includes a process of supplying a reactive gas RG to induce a plasma discharge. As an example, the reactive gas RG is O2. The exhaust material, whose decomposition performance has been enhanced by the plasma discharge, is decomposed into charged ions. As an example, the exhaust material to which the plasma pretreatment system has been applied is N 3- , O 2- H + M x+ , C, e -This includes (electrons), etc. However, this is only one embodiment and is not limited thereto, and the operation of the plasma pretreatment system and the decomposed exhaust may differ depending on the embodiment.

[0062] Meanwhile, the ionized exhaust material that moves to pump 32 recombines to form new substances. As an example, pump 32 contains MO X This includes NO2, H2O, CO2, etc. However, this is only one embodiment and is not limited to this, and may include a variety of other substances. For example, the pump 32 contains H that does not recombine. + It contains (cations).

[0063] The scrubber 33 dissolves and discharges at least a portion of the remaining exhaust material. On the other hand, the efficiency of the scrubber 33 is increased because the exhaust material to which the plasma pretreatment system has been applied is decomposed and / or replaced with materials that have a relatively simpler structure compared to the initial exhaust material WP. As an example, the exhaust material discharged to the outside through the scrubber 33 is MO X These can take the forms of NO2, H2O, CO2, H2, etc. However, this is only one embodiment and is not limited to other substances.

[0064] Figure 7 is a schematic flowchart illustrating the operation of the plasma pretreatment system in a deposition system according to one embodiment of the present invention.

[0065] Referring to Figure 7, the plasma pretreatment system does not operate continuously throughout all process steps. Therefore, the deposition system according to this embodiment goes through a step (S200) to determine whether or not to operate the plasma pretreatment system. The plasma pretreatment system operates during and / or between processes. If the plasma pretreatment system is not operating, the exhaust material discharged from the reaction chamber is discharged to the outside via the pump and scrubber.

[0066] When the plasma pretreatment system is operating, a reactive gas is introduced into the processing chamber (S210). As an example, as mentioned above, the reactive gas is O2. The reactive gas reacts with the exhaust gas discharged from the reaction chamber and is decomposed.

[0067] However, exhaust material in powder form that has not been completely decomposed may accumulate in the pump and shorten its lifespan; therefore, plasma discharge is generated to improve decomposition performance (S220). As an example, the plasma discharge is generated in the form of RF plasma discharge. However, this is only one embodiment and is not limited to this, and it may be generated in the form of DC glow discharge or other forms depending on the embodiment.

[0068] In the deposition system according to this embodiment, the plasma pretreatment system operates multiple times depending on the embodiment. Therefore, the process goes through a step (S230) to decide whether or not to operate the plasma pretreatment system repeatedly. As a result, steps S210 and S220 are repeated multiple times. The exhaust material, whose decomposition performance has been improved by the above steps, is discharged through the pump and scrubber (S240). However, as mentioned above, this is only one embodiment and is not limited thereto, and the configuration of the exhaust section and the arrangement of each component may vary depending on the embodiment.

[0069] The plasma pretreatment system applied to the deposition system according to this embodiment operates in a way that allows for the discharge of exhaust material with improved decomposition performance. This reduces the amount of exhaust material accumulated in the pump, thereby extending the pump's lifespan. Furthermore, by increasing the efficiency of the scrubber, exhaust efficiency can be improved.

[0070] Figures 8 to 10 are schematic block diagrams of a vapor deposition system according to one embodiment of the present invention.

[0071] Referring to Figure 8, the deposition system 300 according to this embodiment is a deposition system for when the thin film to be deposited consists of a binary or ternary material. As an example, the deposition system 300 is shown in deposition system 1 of Figure 1. Reaction chamber 10, gas supply unit 20, exhaust unit 30, main tank 40, and reactant supply unit 50Corresponding Reaction chamber 310, first gas supply unit 320a, exhaust unit 330, first main tank 340a, and reactant supply unit 350 This includes. The vapor deposition system 300 is Second gas supply section 320b and the second main tank 340b It also includes.

[0072] The first precursor, which is a component of the thin film to be deposited, is filled from the first main tank 340a into the first gas supply unit 320a by the first automatic filling system ARS_a. The first gas supply unit 320a supplies the first precursor in a gaseous state to the reaction chamber 310, and the second gas supply unit 320b supplies a second precursor, which is different from the first precursor, in a gaseous state to the reaction chamber 310.

[0073] In the deposition system 300 according to this embodiment, the second gas supply unit 320b includes a configuration corresponding to the first gas supply unit 320a. For example, the second gas supply unit 320b includes a second sub-tank 322b, a second liquid flow controller 323b, a second vaporizer 324b, and a second filter 325b. The second sub-tank 322b stores the second precursor filled from the second main tank 340b by the second automatic filling system ARS_b.

[0074] Meanwhile, the first and second precursors react with the reactant supplied from the reactant supply unit 350 in the reaction chamber 310 to form a thin film on the substrate. The exhaust gas discharged during the deposition process is discharged to the outside after the plasma pretreatment system shown in Figure 6 is applied. The other configuration features and operation are the same as those of the deposition system 1 shown in Figure 1. However, this is only one embodiment and is not limited thereto, and the configurations of the first gas supply unit 320a and the second gas supply unit 320b may have different characteristics depending on the difference in physical properties between the first and second precursors.

[0075] Referring to Figure 9, the deposition system 400 according to this embodiment is a deposition system for when the thin film to be deposited consists of a binary or ternary material. As an example, it further includes a second gas supply unit 420b along with a first gas supply unit 420a corresponding to the gas supply unit 20 shown in deposition system 1 of Figure 1.

[0076] The first precursor, which is a component of the thin film to be deposited, is filled from the first main tank 440a into the first gas supply unit 420a by the first automatic filling system ARS_a. The first gas supply unit 420a supplies the first precursor in a gaseous state to the reaction chamber 410. The second precursor, which is different from the first precursor, is filled from the second main tank 440b into the second sub-tank 422b by the second automatic filling system ARS_b. The second gas supply unit 420b supplies the second precursor in a gaseous state to the reaction chamber 410.

[0077] On the other hand, the second gas supply unit 420b included in the deposition system 400 according to this embodiment differs from the second gas supply unit 320b included in the deposition system 300 shown in Figure 8 in that it uses a bubbler to vaporize the second precursor. For example, the carrier gas supply unit 421b supplies carrier gas to the second sub-tank 422b. For example, the carrier gas is a gas such as N2 with low reactivity. The second precursor, which was in liquid state and stored in the second sub-tank 422b, is vaporized by baking and / or bubbling and supplied to the reaction chamber 410.

[0078] Meanwhile, the first and second precursors react with reactants supplied from the reactant supply unit 450 in the reaction chamber 410 to form a thin film on the substrate. The exhaust gas discharged during the deposition process is discharged to the outside after the plasma pretreatment system shown in Figure 6 is applied. The other configuration features and operation are the same as those of the deposition system 1 shown in Figure 1. However, this is only one embodiment and is not limited thereto, and the configurations of the first gas supply unit 420a and the second gas supply unit 420b may have different characteristics depending on the difference in physical properties between the first and second precursors.

[0079] Referring to Figure 10, the deposition system 500 according to this embodiment further includes a plurality of gas supply units (520b, 520c, ..., 520n) along with a first gas supply unit 520a corresponding to the gas supply unit 20 shown in the deposition system 1 of Figure 1. As an example, at least a part of the deposition system 500 shown in Figure 10 is identical to the deposition system 300 shown in Figure 8 and / or the deposition system 400 shown in Figure 9.

[0080] The first gas supply unit 520a supplies the first precursor in a gaseous state to the reaction chamber 510. As an example, the nth gas supply unit supplies the nth precursor in a gaseous state to the reaction chamber 510.

[0081] The number of gas supply units (520a, 520b, ..., 520n) and reactant supply units 550 is determined by the composition of the thin film deposited on the substrate. For example, in the case of a thin film composed of a binary material, the deposition process is carried out using a deposition system that includes one gas supply unit 520a and one reactant supply unit 550. In the case of a thin film composed of a ternary material, the deposition process is carried out using a deposition system that includes two gas supply units (520a, 520b) and two reactant supply units 550. However, this is only one embodiment and is not limited thereto, and the number of constituent elements of the thin film and the number of gas supply units (520a, 520b, ..., 520n) and reactant supply units 550 may differ depending on the deposition process method.

[0082] On the other hand, each of the multiple gas supply units (520a, 520b, ..., 520n) includes an independent configuration. For example, each of the multiple gas supply units (520a, 520b, ..., 520n) is a gas supply unit that includes a vaporizer, similar to the deposition system shown in Figure 1. However, it is not limited to this, and at least some of the multiple gas supply units (520a, 520b, ..., 520n) may be gas supply units that include a bubbler.

[0083] In the deposition system according to this embodiment, the first to nth precursors supplied from n gas supply units (520a, 520b, ..., 520n) react with reactants supplied from the reactant supply unit 550 to form a thin film on the substrate.

[0084] The exhaust gases discharged during the deposition process are subjected to the plasma pretreatment system shown in Figure 6 before being discharged to the outside. The other configuration features and operation are the same as those of the deposition system 1 shown in Figure 1. However, this is only one embodiment and is not limited thereto; the configurations of the first gas supply unit 520a to the nth gas supply unit 520n may each have different characteristics depending on the physical properties of the first to nth precursors.

[0085] The present invention is not limited by the embodiments and drawings described above, but is limited by the claims. Accordingly, various forms of substitution, modification, and alteration are possible by persons with ordinary skill in the art, without departing from the technical idea of ​​the present invention as described in the claims, and these also fall within the scope of the present invention. [Explanation of symbols]

[0086] 1, 300, 400, 500 vapor deposition systems 10, 10a, 10b, 10c, 310, 410, 510 reaction chambers 20, 120, 220 Gas Supply Department 22, 122, 222 Sub-tanks 23, 223 Liquid Flow Controller 24, 224 vaporizer 25 Filters 30, 330, 430, 530 Exhaust section 31, 331, 431, 531 Processing Chambers 32, 332, 432, 532 pumps 33, 333, 433, 533 Scrubber 40 Main Tank 50, 350, 450, 550 Reactant supply unit 320a, 420a, 520a First Gas Supply Unit 320b, 420b Second Gas Supply Unit 322a, 422a, 522a First Sub-tank 322b, 422b Second Sub-tank 323a, 423a, 523a First liquid flow controller 323b Second liquid flow controller 324a, 424a, 524a First vaporizer 324b Second vaporizer 325a, 425a, 525a First filter 325b Second filter 340a, 440a, 540a First Main Tank 340b, 440b, 540b Second Main Tank 421b Transport Gas Supply Department ARS Automatic Filling System ARS_a, ARS_b 1st and 2nd Automatic Filling Systems B Bubbler G Transport Gas GP gas precursor L1-L3 1st-3rd piping LP liquid precursor PPS Plasma Pretreatment System RG Reactive Gas Wa, Wb, Wc wafers WP exhaust

Claims

1. Reaction chamber and A first gas supply unit supplies the first precursor, which is stored in liquid form in the first main tank, to the reaction chamber in gaseous form, A second gas supply unit supplies a second precursor, stored in a liquid state in a second main tank different from the first main tank, to the reaction chamber in a gaseous state, It comprises an exhaust section for discharging exhaust material generated in the reaction chamber, The first gas supply unit includes a first sub-tank to which the first precursor is supplied in liquid form from the first main tank by a first automatic filling system, a first vaporizer to vaporize the first precursor and supply it to the reaction chamber, and a first liquid flow controller to adjust the flow rate of the first precursor in liquid form between the first sub-tank and the first vaporizer. The second gas supply unit includes a second sub-tank to which the second precursor is supplied in liquid form from the second main tank by a second automatic filling system, a carrier gas supply unit to which carrier gas is supplied to the second sub-tank, and a bubbler that uses the carrier gas to generate a bubbling phenomenon in the second sub-tank to vaporize the second precursor and supply it to the reaction chamber. The vapor pressure of the second precursor is 1 Torr or more at 100°C. The exhaust unit discharges the initial exhaust generated in the reaction chamber and includes a processing chamber, a pump, and a scrubber that are sequentially connected from the reaction chamber. The deposition system is characterized in that the processing chamber supplies a reactive gas to the initial exhaust, then induces a plasma discharge to discharge the exhaust in an ionic state to the pump.

2. The vapor deposition system according to claim 1, characterized in that the second precursor is composed of elements different from the first precursor.

3. The deposition system according to claim 1, further comprising a filter connected to a supply path for the first precursor that is vaporized by the first vaporizer and supplied to the reaction chamber.

4. The vapor deposition system according to claim 1, further comprising a reactant supply unit for supplying reactants that react with the first precursor and the second precursor to the reaction chamber.

5. The vapor deposition system according to claim 1, characterized in that the scrubber, after being recombined by the pump, dissolves and discharges the exhaust material that has moved to the scrubber.

6. The bubbler directly injects the transport gas into the second precursor filled in the second sub-tank. The outlet of the bubbler is located at a first height from the bottom surface of the second sub-tank. The deposition system according to claim 1, characterized in that the second automatic filling system supplies the second precursor from the second main tank to the second subtank such that the second precursor is present in the second subtank at a second height higher than the first height from the lower surface of the second subtank.

7. The second gas supply unit includes piping for supplying the second precursor, which has been vaporized by the bubbler in the second sub-tank, to the reaction chamber. The deposition system according to claim 6, characterized in that the inlet of the piping is positioned higher than the upper surface of the second precursor filled in the second subtank.

8. The deposition system according to claim 1, characterized in that the first liquid flow controller supplies the first precursor to the first vaporizer in a constant amount per unit time.

9. The deposition system according to claim 1, characterized in that the second gas supply unit supplies the second precursor to the reaction chamber through a separate route different from that of the first gas supply unit.

10. The deposition system according to claim 1, characterized in that the reaction chamber is of batch, semi-batch, or single type.

11. Reaction chamber and A first gas supply unit supplies the first precursor, which is stored in liquid form in the first main tank, to the reaction chamber in gaseous form, A second gas supply unit supplies a second precursor, stored in a liquid state in a second main tank different from the first main tank, to the reaction chamber in a gaseous state, It comprises an exhaust section for discharging exhaust material generated in the reaction chamber, The first gas supply unit includes a first sub-tank that receives the first precursor in liquid form from the first main tank by a first automatic filling system, a first vaporizer that vaporizes the first precursor and supplies it to the reaction chamber, and a first liquid flow controller that adjusts the flow rate of the first precursor in liquid form between the first sub-tank and the first vaporizer. The second gas supply unit includes a second sub-tank to which the second precursor is supplied in liquid form from the second main tank by a second automatic filling system, and a carrier gas supply unit to which carrier gas is supplied to the second sub-tank so that the second precursor is vaporized in the second sub-tank by baking before being supplied to the reaction chamber. The vapor pressure of the second precursor is 1 Torr or more at 100°C. The exhaust unit discharges the initial exhaust generated in the reaction chamber and includes a processing chamber, a pump, and a scrubber that are sequentially connected from the reaction chamber. The deposition system is characterized in that the processing chamber supplies a reactive gas to the initial exhaust, then induces a plasma discharge to discharge the exhaust in an ionic state to the pump.

12. The vapor deposition system according to claim 11, characterized in that the second precursor is composed of elements different from those of the first precursor.

13. The deposition system according to claim 11, further comprising a filter connected to a supply path for the first precursor that is vaporized by the first vaporizer and supplied to the reaction chamber.

14. The deposition system according to claim 11, further comprising a reactant supply unit for supplying reactants that react with the first precursor and the second precursor to the reaction chamber.

15. The vapor deposition system according to claim 11, characterized in that the scrubber, after being recombined by the pump, dissolves and discharges the exhaust material that has moved to the scrubber.

16. The deposition system according to claim 11, characterized in that the first gas supply unit includes a first pipe whose inlet is located within the first precursor filled in the first subtank and which supplies the first precursor in a liquid state using a first liquid flow controller, and a second pipe which injects gas toward the first precursor at a position higher than the surface of the first precursor.

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