Colloidal particle ink composition, method for forming a colloidal particle pattern using the same, colloidal particle pattern film, and electronic element

Abstract

To provide a colloidal particle ink composition, a colloidal particle pattern formation method, a colloidal particle pattern film, and an electronic element, each of which uses the colloidal particle ink composition.SOLUTION: There are provided a colloidal particle ink composition, a colloidal particle pattern formation method, a colloidal particle pattern film, and an electronic element, each of which uses the colloidal particle ink composition.SELECTED DRAWING: Figure 1

Description

Technical Field

[0001] The present invention relates to a colloidal particle ink composition, a method for forming a colloidal particle pattern using the same, a colloidal particle pattern film, and an electronic device.

[0002] This research was conducted with the support of the Samsung Future Technology Incubation Project (Project No.: SRFC-MA1901-51) and the National Research Foundation of Korea (Project Nos.: 2021R1A2C2008332 and RS-2024-00445116).

Background Art

[0003] Colloidal particles have been extensively studied in recent years due to their potential applications in optoelectronic devices. For example, quantum dots, as an example of such materials, exhibit interesting physical properties such as an adjustable bandgap, a narrow bandwidth, high luminescence efficiency, and solution processability. However, developing a suitable patterning process for such solution-processed nanomaterials still remains a challenge. Photolithography is one of the most promising technologies among the various available patterning methods and can produce high-resolution patterns that meet industrial requirements.

[0004] Conventional photolithography generates patterns by physically or chemically etching a target material based on the characteristics of a pre-patterned layer of photoresist. In this process, the target material must withstand harsh etching conditions while maintaining its physical properties. However, the luminescence properties of nanostructured light-emitting materials, such as quantum dots, can be degraded during the etching stage due to defects generated over a large surface area. Furthermore, conventional direct photopatterning processes have been utilized as a promising lithography approach that forms patterns through selective chemical transformation of the target layer and the resulting appropriate development stage, without involving an etching step. However, the high-energy irradiation and / or high-temperature heat treatment required for chemical transformation in direct photopatterning raise concerns about potential damage to the intrinsic luminescence properties of nanostructured light-emitting materials, particularly quantum dots. Additionally, quantum dot patterns formed by direct photopatterning have the disadvantage of lower fidelity. [Overview of the Initiative] [Problems that the invention aims to solve]

[0005] The problem that this invention aims to solve is to provide a colloidal particle ink composition capable of forming a colloidal particle pattern with high fidelity. Furthermore, the invention provides a method for forming a colloidal particle pattern using the colloidal particle ink composition and a colloidal particle pattern film. In addition, the invention provides an electronic element having excellent properties, comprising a colloidal particle pattern formed using the colloidal particle ink composition. [Means for solving the problem]

[0006] In one aspect, a colloidal particle ink composition is provided, comprising colloidal particles and a low-temperature activated crosslinking agent.

[0007] According to one embodiment, the low-temperature activated crosslinking agent can be thermally activated at a temperature of 0°C to 130°C, or activated by ultraviolet light in the range of 200 nm to 380 nm, to produce an intermediate.

[0008] According to one embodiment, the low-temperature activated crosslinking agent is also a compound containing a diazo group.

[0009] According to one embodiment, the low-temperature activated crosslinking agent is also a compound represented by the following chemical formula 1:

[0010] [ka]

[0011] In the aforementioned chemical formula 1, L1 and L2 are independent of each other, with a single bond or a C1-C bond with at least one R1 substituted or unsubstituted. 30 It is an alkylene group, m1 and m2 are independently 1, 2, 3, 4, 5, or 6. Ar1 and Ar2 are either substituted or unsubstituted with at least one R1 in C5-C 60 A carbon ring group, or a C1-C group substituted or unsubstituted with at least one R1 group. 60 It is a heterocyclic group, n1 and n2 are independently 0, 1, 2, 3, 4, 5, 6, 7, 8, 9, or 10. The sum of n1 and n2 is 2 or greater. Q1-Q3 are independent of each other, consisting of a single bond, O, S, C, C(R2), C(R2)(R3), or C1-C substituted or unsubstituted by at least one R1. 30 It is an alkylene group, X1 and X2 are independently O, S, Se, N(R4), and C(R4)(R5), R1~R5 are independently hydrogen, deuterium, -F, -Cl, -Br, -I, hydroxyl group, cyano group, C1-C 30 Alkyl alkyl group, C2-C 30 Alkenyl group, C2-C30 an alkynyl group, C1-C 30 an alkoxy group, C1-C 30 an alkylthio group, C5-C 60 a carbocyclic group, C1-C 60 a heterocyclic group, or -Si(Q 11 )(Q 12 )(Q 13 ) and Q 11 ~Q 13 are, independently of one another, hydrogen, deuterium, -F, -Cl, -Br, -I, a hydroxyl group, a cyano group, C1-C 30 an alkyl group, C2-C 30 an alkenyl group, C2-C 30 an alkynyl group, C1-C 30 an alkoxy group, or C1-C 30 an alkylthio group.

[0012] According to another aspect, there is provided a method for forming a colloidal particle pattern using the colloidal particle ink composition.

[0013] According to still another aspect, there is provided a colloidal particle pattern film formed using the colloidal particle ink composition.

[0014] According to still another aspect, there is provided an electronic device including a colloidal particle pattern formed using the colloidal particle ink composition.

Effects of the Invention

[0015] The colloidal particle pattern formed using the aforementioned colloidal particle ink composition exhibits high fidelity and reduced line edge roughness and surface roughness. Furthermore, when forming a colloidal particle pattern using the aforementioned colloidal particle ink composition, the colloidal particles are crosslinked by a low-temperature activated crosslinking agent, allowing the crosslinking reaction to occur without high-temperature heat treatment. Additionally, the chemical crosslinking reaction provides excellent chemical durability and / or resistance to solvents, enabling the formation of high-quality multi-hue colloidal particle patterns by repeatedly applying the ink and patterning as needed. Moreover, crosslinking and patterning can be performed on a variety of colloidal particles having diverse dimensions or exhibiting luminescent or non-luminescent properties. [Brief explanation of the drawing]

[0016] [Figure 1] This diagram schematically illustrates a method for forming a colloidal particle pattern according to one embodiment. [Figure 2] This is a photograph and a diagram showing the height profile of a colloidal particle pattern produced by a colloidal particle pattern formation method according to one embodiment, as observed with an atomic force microscope (AFM). [Figure 3] This drawing shows the line edge roughness, line width variation, and surface roughness of a colloidal particle pattern produced by a colloidal particle pattern formation method according to one embodiment. [Figure 4] This diagram schematically illustrates a method for forming a colloidal particle pattern according to one embodiment. [Figure 5] This is a diagram showing a colloidal particle pattern according to one embodiment, observed with a fluorescence microscope. [Figure 6] This is a photograph and a diagram showing the height profile of a colloidal particle pattern produced by a colloidal particle pattern formation method according to one embodiment, as observed by AFM. [Figure 7] This figure shows an optical microscope image of the line patterns of CuInS, InAs, and PbS quantum dots formed by a colloidal particle pattern formation method according to one embodiment. [Figure 8] This is a schematic cross-sectional view illustrating an example of an electronic element according to one embodiment. [Figure 9] This is a diagram showing the emission spectrum of an electronic device according to one embodiment. [Figure 10] This diagram shows the current density (J)-voltage (V)-luminance (L) profile and the external quantum efficiency (EQE)-J profile of an electronic device according to one embodiment. [Figure 11] This diagram shows the current density (J)-voltage (V)-luminance (L) profile and the external quantum efficiency (EQE)-J profile of an electronic device according to one embodiment. [Figure 12] This diagram shows the current density (J)-voltage (V)-luminance (L) profile and the external quantum efficiency (EQE)-J profile of an electronic device according to one embodiment. [Modes for carrying out the invention]

[0017] The present invention will be described in more detail below.

[0018] In this specification, terms such as "includes" or "has" mean that the features or components described in the specification exist, and do not preclude the possibility that one or more other features or components may be added.

[0019] In this specification, when various components such as layers and films are said to be "on top of" other components, this includes not only cases where they are "directly on top of" other components, but also cases where other components are interposed between them.

[0020] [Colloidal particle ink composition] A colloidal particle ink composition provided by one aspect of the present invention comprises colloidal particles and a low-temperature activated crosslinking agent.

[0021] The colloidal particle ink composition contains the low-temperature activated crosslinking agent, which allows the colloidal particles to be crosslinked by the agent. This prevents the crosslinking reaction from occurring without high-temperature (e.g., temperatures exceeding 140°C) heat treatment, thus preventing damage to the colloidal particles due to high temperatures during the solution process, which can lead to a decrease in luminescence and electrical properties, or a change or degradation of the morphology of the formed patterned thin film. Furthermore, because chemical crosslinking is formed on the colloidal particles, they exhibit excellent chemical durability and / or resistance to solvents. Therefore, even if photopatterning is repeated as needed, degradation of the previously formed pattern can be prevented, enabling the formation of high-quality multi-hue colloidal particle patterns.

[0022] According to one embodiment, the colloidal particles can have shapes such as dots, rods, 2D plates, or 3D objects.

[0023] According to one embodiment, the colloidal particle is also a quantum dot.

[0024] According to one embodiment, the quantum dot includes a semiconductor nanocrystal and an organic ligand bonded to the surface of the semiconductor nanocrystal.

[0025] The semiconductor nanocrystal refers to a crystal of a semiconductor compound. The semiconductor nanocrystal may include any material having semiconductor or conductive properties that can emit light of various wavelengths depending on its size.

[0026] According to one embodiment, the semiconductor nanocrystal comprises a group III-VI semiconductor compound; a group II-VI semiconductor compound; a group III-V semiconductor compound; a group III-VI semiconductor compound; a group I-III-VI semiconductor compound; a group IV-VI semiconductor compound; a group IV compound; or any combination thereof.

[0027] According to one embodiment, the III-VI semiconductor compound includes a dielemental compound (e.g., In2S3), a trielemental compound (e.g., AgInS, AgInS2, CuInS, CuInS2), or any combination thereof.

[0028] According to one embodiment, the II-VI group semiconductor compound is a dielemental compound (e.g., CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, MgSe, MgS, etc.) or a trielemental compound (e.g., CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZn This includes Se, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, MgZnSe, MgZnS, etc., tetraelement compounds (e.g., CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, HgZnSTe, etc.), or any combination thereof.

[0029] According to one embodiment, the III-V semiconductor compound includes dielemental compounds (e.g., GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, etc.), trielemental compounds (e.g., GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InGaP, InNP, InAlP, InNAs, InNSb, InPAs, InPSb, GaAlNP, etc.), tetraelemental compounds (e.g., GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, InAlPSb, etc.), or any combination thereof.

[0030] According to one embodiment, the III-V semiconductor compound may further contain a group II element. For example, the III-V semiconductor compound further containing a group II element may include InZnP, InGaZnP, InAlZnP, or any combination thereof.

[0031] According to one embodiment, the III-VI group semiconductor compound includes a dielement compound (e.g., GaS, GaSe, Ga2Se3, GaTe, InS, InSe, In2Se3, InTe, etc.), a trielement compound (e.g., InGaS3, InGaSe3, etc.), or any combination thereof.

[0032] According to one embodiment, the I-III-VI semiconductor compound includes a tri-element compound (e.g., AgInS, AgInS2, CuInS, CuInS2, CuGaO2, AgGaO2, AgAlO2, etc.) or any combination thereof.

[0033] According to one embodiment, the IV-VI group semiconductor compound includes dielemental compounds (e.g., SnS, SnSe, SnTe, PbS, PbSe, PbTe, etc.), trielemental compounds (e.g., SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, etc.), tetraelemental compounds (e.g., SnPbSSe, SnPbSeTe, SnPbSTe, etc.), or any combination thereof.

[0034] According to one embodiment, the Group IV compound includes single-element compounds (e.g., Si, Ge, etc.), two-element compounds (e.g., SiC, SiGe, etc.), or any combination thereof.

[0035] According to one embodiment, the semiconductor nanocrystal includes CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, InP, InN, InAs, GaN, GaP, GaAs, ZnCdS, ZnSeS, ZnCdSeS, CdZnSe, InZnP, InGaP, GaPZnS, GaPZnSe, GaPZnSeS, or any combination thereof.

[0036] According to one embodiment, the diameter of the semiconductor nanocrystal is approximately 1 nm to approximately 10 nm.

[0037] According to one embodiment, the semiconductor nanocrystal has a core-shell structure including a core and a shell covering at least a portion of the core.

[0038] According to one embodiment, the shell of the quantum dot can serve as a protective layer to prevent chemical degradation of the core and maintain semiconductor properties, and / or as a charging layer to impart electrophoretic properties to the quantum dot.

[0039] According to one embodiment, the material contained in the core and the material contained in the shell are different from each other.

[0040] According to one embodiment, the shell is single-layered or multi-layered.

[0041] According to one embodiment, the interface between the core and the shell can have a concentration gradient in which the concentration of a particular element present in the shell decreases or increases towards the center.

[0042] The shell of the semiconductor nanocrystal comprises the aforementioned III-VI group semiconductor compounds, II-VI group semiconductor compounds, III-V group semiconductor compounds, III-VI group semiconductor compounds, I-III-VI group semiconductor compounds, or IV-VI group semiconductor compounds; metallic or nonmetallic oxides; or combinations thereof.

[0043] According to one embodiment, the metal or nonmetal oxide includes dielemental compounds (e.g., SiO2, Al2O3, TiO2, ZnO, MnO, Mn2O3, Mn3O4, CuO, FeO, Fe2O3, Fe3O4, CoO, Co3O4, NiO, etc.), trielemental compounds (e.g., MgAl2O4, CoFe2O4, NiFe2O4, CoMn2O4, etc.), or any combination thereof.

[0044] According to one embodiment, the semiconductor nanocrystals are synthesized by a wet chemical process, an organometallic chemical vapor deposition process, a molecular beam epitaxy process, and the like.

[0045] According to one embodiment, the full width of half maximum (FWHM) of the emission wavelength spectrum of the semiconductor nanocrystal is approximately 45 nm or less. For example, the FWHM of the semiconductor nanocrystal is approximately 40 nm or less, or approximately 30 nm or less.

[0046] According to one embodiment, the semiconductor nanocrystal can have the form of nanoparticles (for example, spherical, plate-like, pyramidal, multi-arm, or cubic), nanotubes, nanowires, nanofibers, etc.

[0047] According to one embodiment, the energy band gap of the quantum dot is controlled by its size, allowing light in a variety of wavelengths to be obtained.

[0048] According to one embodiment, the quantum dot can emit red, green, and / or blue light.

[0049] According to one embodiment, by using quantum dots of different sizes, a light-emitting element that emits light of multiple wavelengths can be realized, and it can be configured to emit white light by combining light of various colors, and an element that absorbs light of various wavelengths other than white light can also be realized.

[0050] According to one embodiment, the organic ligand plays a role in protecting the surface of the semiconductor nanocrystal and regulating its dispersibility in the solvent, and can utilize commonly used organic ligand compounds.

[0051] According to one embodiment, the organic ligand is C4-C 30 It contains fatty acids or their derivatives.

[0052] According to one embodiment, the organic ligand includes oleic acid, myristic acid, lauric acid, palmitic acid, palmitoleic acid, stearic acid, oleylamine, n-octylamine, hexadecylamine, trioctylamine, octanthiol, dodecanethiol, hexylphosphonic acid, n-octylphosphonic acid, tetradecylphosphonic acid, octadecylphosphonic acid, or any combination thereof.

[0053] According to one embodiment, the low-temperature activated crosslinking agent can be thermally activated at a temperature of 0°C to 130°C to produce an intermediate. For example, the low-temperature activated crosslinking agent can be thermally activated at a temperature of 20°C to 120°C, or 50°C to 115°C to produce an intermediate.

[0054] According to one embodiment, the low-temperature activated crosslinking agent can be activated by ultraviolet light to produce an intermediate. For example, the low-temperature activated crosslinking agent can be activated by ultraviolet light at 200 nm to 380 nm, 300 nm to 380 nm, about 254 nm, or about 365 nm to produce an intermediate.

[0055] According to one embodiment, the low-temperature activated crosslinking agent can be used in a colloidal particle pattern formation method described later. For example, the low-temperature activated crosslinking agent can be used in a photoresist-guided indirect photopatterning method.

[0056] According to one embodiment, the low-temperature activated crosslinking agent can be used directly in a photopatterning method.

[0057] According to one embodiment, the low-temperature activated crosslinking agent is also a compound containing a diazo group. For example, the diazo group can induce carbene-mediated crosslinking by annealing, as illustrated below.

[0058] [ka]

[0059] According to one embodiment, the low-temperature activated crosslinking agent is also a compound represented by the following chemical formula 1:

[0060] [ka]

[0061] In the aforementioned chemical formula 1, L1 and L2 are independent of each other, with a single bond or a C1-C bond with at least one R1 substituted or unsubstituted. 30 It is an alkylene group, m1 and m2 are independently 1, 2, 3, 4, 5, or 6. Ar1 and Ar2 are either substituted or unsubstituted with at least one R1 in C5-C 60 A carbon ring group, or a C1-C group substituted or unsubstituted with at least one R1 group. 60 It is a heterocyclic group, n1 and n2 are independently 0, 1, 2, 3, 4, 5, 6, 7, 8, 9, or 10. The sum of n1 and n2 is 2 or greater. Q1-Q3 are independent of each other, consisting of a single bond, O, S, C, C(R2), C(R2)(R3), or C1-C substituted or unsubstituted by at least one R1. 30 It is an alkylene group, X1 and X2 are independently O, S, Se, N(R4), and C(R4)(R5), R1~R5 are independently hydrogen, deuterium, -F, -Cl, -Br, -I, hydroxyl group, cyano group, C1-C 30 Alkyl alkyl group, C2-C 30 Alkenyl group, C2-C 30 Alkynyl group, C1-C 30 Alkoxy group, C1-C 30 Alkylthio group, C5-C 60 carbocyclic group, C1-C 60 Heterocyclic group, or -Si(Q 11 )(Q 12)(Q 13 ) and Q 11 ~Q 13 These are, independently of each other, hydrogen, deuterium, -F, -Cl, -Br, -I, hydroxyl group, cyano group, C1-C 30 Alkyl alkyl group, C2-C 30 Alkenyl group, C2-C 30 Alkynyl group, C1-C 30 Alkoxy group, or C1-C 30 It is an alkylthio group.

[0062] According to one embodiment, L1 and L2 are independently a single bond, a methylene group, or an ethylene group.

[0063] According to one embodiment, m1 and m2 are independently 1 or 2.

[0064] According to one embodiment, Ar1 and Ar2 are independently substituted or unsubstituted phenyl groups.

[0065] According to one embodiment, the sum of n1 and n2 is between 4 and 6.

[0066] According to one embodiment, the low-temperature activated crosslinking agent is also a compound represented by the following chemical formula 2:

[0067] [ka]

[0068] In the aforementioned chemical formula 2, The descriptions relating to L1, L2, m1, m2, n1, n2, X1, X2, and Q1-Q3 are the same as those described herein. R 11 ~R 15 and R 21 ~R 25 The explanations relating to this are independent of each other and are the same as the explanation relating to R1.

[0069] According to one embodiment, the crosslinkable compound is one or more selected from the following compounds 1 to 7:

[0070] [ka] [ka] [ka]

[0071] According to one embodiment, the low-temperature activated crosslinking agent can form covalent bonds with the colloidal particles.

[0072] For example, the colloidal particles are quantum dots, the quantum dots contain semiconductor nanocrystals and organic ligands on the surface of the semiconductor nanocrystals, and the low-temperature activated crosslinking agent can form covalent bonds (e.g., carbon-carbon bonds) with the organic ligands.

[0073] According to one embodiment, the low-temperature activated crosslinking agent is also hydrophobic.

[0074] Typically, photoresists often contain hydrophilic materials with numerous hydroxyl groups (-OH). However, because the low-temperature activated crosslinking agent satisfies the aforementioned properties, it is possible to stably form a photoresist pattern using the colloidal particle ink composition without a hydrophobic treatment process on the substrate. Furthermore, it has the advantage of preventing the optical and electrical properties of the colloidal particles from degrading due to hydrophobic treatment or the like.

[0075] According to one embodiment, the colloidal particle ink composition does not contain a hydrophobic treatment agent (e.g., hexasiloxane).

[0076] According to one embodiment, the colloidal particle ink composition does not contain a tackifier.

[0077] According to one embodiment, the colloidal particle ink composition may further contain a solvent.

[0078] According to one embodiment, the solvent is also an organic solvent. For example, the solvent includes 1-octadecene (ODE), trioctylamine (TOA), trioctylphosphine (TOP), oleylamine, or any combination thereof.

[0079] According to one embodiment, the colloidal particle ink composition can be used in a solution process.

[0080] [Colloidal particle pattern formation method] According to another aspect of the present invention, a method for forming a colloidal particle pattern using the colloidal particle ink composition is provided.

[0081] In the colloidal particle pattern formation method using the aforementioned colloidal particle ink composition, the colloidal particles are crosslinked by a low-temperature activated crosslinking agent, so the crosslinking reaction occurs without high-temperature (e.g., temperatures exceeding 140°C) heat treatment. This prevents damage to the colloidal particles during the solution process, which can lead to a decrease in luminescence and electrical properties, or changes or deterioration of the morphology of the formed pattern thin film. Furthermore, because chemical crosslinking is formed on the colloidal particles, they have excellent chemical durability and / or resistance to solvents. Therefore, even if photopatterning is repeated as needed, deterioration of the previously formed pattern can be prevented, enabling the formation of high-quality multi-hue colloidal particle patterns.

[0082] According to one embodiment, the colloidal particle pattern formation method is also a photoresist-induced indirect photopatterning method.

[0083] For example, the colloidal particle pattern formation method involves forming a thin film using the colloidal particle ink composition on a predetermined photoresist pattern and then removing the photoresist pattern to form a colloidal particle pattern. In other words, the photoresist pattern can act as a guide, serving as a reverse pattern for the colloidal particle pattern to be formed.

[0084] According to one embodiment, the colloidal particle pattern formation method includes the steps of applying a first quantum dot ink composition containing first colloidal particles and a first low-temperature activated crosslinking agent onto a first photoresist pattern, The steps include annealing the coated first colloidal particle ink composition at a temperature of 0°C to 130°C, The process includes the step of removing the first photoresist pattern to form a first colloidal particle pattern.

[0085] According to one embodiment, the step of applying the first colloidal particle ink composition can utilize methods such as spin coating, spray coating, casting, drop casting, dipping, LB (Langmuir-Blodgett) method, inkjet printing, screen printing, laser printing, imprinting, and laser-induced thermal imaging (LITI).

[0086] According to one embodiment, the step of annealing the coated first colloidal particle ink composition at a temperature of 0°C to 130°C is carried out for 1 minute to 60 minutes. For example, the annealing step is carried out for 10 minutes to 30 minutes.

[0087] According to one embodiment, the thickness of the first photoresist pattern is 0.5 nm to 10 μm. For example, the thickness of the first photoresist pattern is 1 nm to 1 μm, 5 nm to 100 nm, or 10 nm to 50 nm.

[0088] According to one embodiment, the thickness of the first colloidal particle pattern is 1 nm to 50 nm. For example, the thickness of the first colloidal particle pattern is 10 nm to 40 nm, or 15 nm to 25 nm.

[0089] According to one embodiment, the ratio of the thickness of the first photoresist pattern to the thickness of the first colloidal particle pattern is 1:1 to 1:0.7.

[0090] The fidelity of the first colloidal particle pattern can be improved by ensuring that the thickness of the first colloidal particle pattern and the thickness of the first photoresist pattern meet the aforementioned ranges.

[0091] According to one embodiment, the colloidal particle pattern formation method may further include a step of reducing the thickness of the first photoresist pattern and / or the first colloidal particle pattern by plasma etching.

[0092] By adjusting the thickness of the first photoresist pattern and / or the first colloidal particle pattern through the plasma etching, the aforementioned thickness ratio can be satisfied, thereby improving the fidelity of the first colloidal particle pattern.

[0093] According to one embodiment, the plasma etching can utilize a reactive ion etching system. For example, the plasma etching is performed using an Ar / O2 mixed gas (approximately 10 sccm to 80 sccm for Ar, and approximately 1 sccm to 30 sccm for O2 gas) and radio frequency (RF) power of approximately 10W to 100W.

[0094] According to one embodiment, the colloidal particle pattern formation method does not include a step of reducing the thickness of the first photoresist pattern and / or the first colloidal particle pattern by plasma etching. For example, when the thickness of the first photoresist pattern is relatively thin (for example, when the thickness of the first photoresist pattern is 1 nm to 1 μm, 5 nm to 100 nm, or 10 nm to 50 nm), the colloidal particle pattern formation method does not include a step of reducing the thickness of the first photoresist pattern and / or the first colloidal particle pattern by plasma etching.

[0095] According to one embodiment, the step of removing the first photoresist pattern to form a first colloidal particle pattern is carried out using a strip solvent. For example, the strip solvent is acetone.

[0096] According to one embodiment, the step of removing the first photoresist pattern to form a first colloidal particle pattern may further include the step of ultrasonically treating the first photoresist pattern.

[0097] According to one embodiment, the colloidal particle pattern formation method includes the step of forming a second photoresist pattern on the first colloidal particle pattern, The steps include applying a second colloidal particle ink composition containing second colloidal particles and a second low-temperature activated crosslinking agent onto the second photoresist pattern, The steps include annealing the coated second colloidal particle ink composition at a temperature of 0°C to 130°C, The process may further include the step of removing the second photoresist pattern to form a second colloidal particle pattern.

[0098] According to one embodiment, the first colloidal particle and the second colloidal particle can exhibit different hues from each other.

[0099] The colloidal particle pattern formation method using the aforementioned colloidal particle ink composition allows for the formation of high-quality multi-hue colloidal particle patterns. This is because the colloidal particles are chemically crosslinked, resulting in excellent chemical durability and / or resistance to solvents. Therefore, even if patterning (e.g., photopatterning, solution-process patterning, etc.) is repeated as needed, degradation of the previously formed pattern can be prevented.

[0100] According to one embodiment, the step of applying the second colloidal particle ink composition can utilize methods such as spin coating, spray coating, casting, drop casting, dipping, LB (Langmuir-Blodgett) method, inkjet printing, screen printing, laser printing, imprinting, and laser-induced thermal imaging (LITI).

[0101] According to one embodiment, the step of annealing the coated second colloidal particle ink composition at a temperature of 0°C to 130°C is carried out for 1 minute to 60 minutes. For example, the annealing step is carried out for 10 minutes to 30 minutes.

[0102] According to one embodiment, the thickness of the second photoresist pattern is 0.5 nm to 50 nm. For example, the thickness of the second photoresist pattern is 5 nm to 40 nm, or 10 nm to 25 nm.

[0103] According to one embodiment, the thickness of the second colloidal particle pattern is 1 nm to 50 nm. For example, the thickness of the second colloidal particle pattern is 10 nm to 40 nm, or 15 nm to 25 nm.

[0104] According to one embodiment, the colloidal particle pattern formation method may further include a step of reducing the thickness of the second photoresist pattern and / or the second colloidal particle pattern by plasma etching.

[0105] According to one embodiment, the step of removing the second photoresist pattern to form a second colloidal particle pattern is carried out using a strip solvent. For example, the strip solvent is acetone.

[0106] According to one embodiment, the step of removing the second photoresist pattern to form a second colloidal particle pattern may further include the step of ultrasonically treating the second photoresist pattern.

[0107] According to one embodiment, the colloidal particle pattern forming method includes the step of forming a third photoresist pattern on the second colloidal particle pattern, The steps include applying a third colloidal particle ink composition containing third colloidal particles and a third low-temperature activated crosslinking agent onto the third photoresist pattern, The steps include annealing the coated third colloidal particle ink composition at a temperature of 0°C to 130°C, The process may further include the step of removing the third photoresist pattern to form a third colloidal particle pattern.

[0108] According to one embodiment, the first colloidal particle and the third colloidal particle can exhibit different hues from each other.

[0109] According to one embodiment, the second colloidal particle and the third colloidal particle can exhibit different hues from each other.

[0110] According to one embodiment, the step of applying the third colloidal particle ink composition can utilize methods such as spin coating, spray coating, casting, drop casting, dipping, LB (Langmuir-Blodgett) method, inkjet printing, screen printing, laser printing, imprinting, and laser-induced thermal imaging (LITI).

[0111] According to one embodiment, the step of annealing the coated third colloidal particle ink composition at a temperature of 0°C to 130°C is carried out for 1 to 60 minutes. For example, the annealing step is carried out for 10 to 30 minutes.

[0112] According to one embodiment, the thickness of the third photoresist pattern is 0.5 nm to 50 nm. For example, the thickness of the third photoresist pattern is 5 nm to 40 nm, or 10 nm to 25 nm.

[0113] According to one embodiment, the thickness of the third colloidal particle pattern is 1 nm to 50 nm. For example, the thickness of the third colloidal particle pattern is 10 nm to 40 nm, or 15 nm to 25 nm.

[0114] According to one embodiment, the colloidal particle pattern formation method may further include a step of reducing the thickness of the third photoresist pattern or the third colloidal particle pattern by plasma etching.

[0115] According to one embodiment, the step of removing the third photoresist pattern to form a third colloidal particle pattern is carried out using a strip solvent. For example, the strip solvent is acetone.

[0116] According to one embodiment, the step of removing the third photoresist pattern to form a third colloidal particle pattern may further include the step of ultrasonically treating the third photoresist pattern.

[0117] [Colloidal particle pattern film] According to yet another aspect of the present invention, a colloidal particle pattern film formed using the colloidal particle ink composition is provided.

[0118] In the colloidal particle pattern film formed using the aforementioned colloidal particle ink composition, the colloidal particles are crosslinked by a low-temperature activated crosslinking agent, so the crosslinking reaction occurs without high-temperature (e.g., temperatures exceeding 140°C) heat treatment. This prevents damage to the colloidal particles during the solution process, which can lead to a decrease in luminescence and electrical properties, or changes or deterioration of the morphology of the formed pattern thin film. Furthermore, since chemical crosslinking is formed on the colloidal particles, they have excellent chemical durability and / or resistance to solvents, allowing for the repeated photopatterning as needed to form high-quality multi-hue colloidal particle patterns.

[0119] A colloidal particle pattern film according to one embodiment is manufactured by the colloidal particle pattern formation method described above.

[0120] According to one embodiment, the colloidal particle pattern film includes a substrate and a colloidal particle pattern formed on the substrate.

[0121] According to one embodiment, the substrate is selected considering mechanical strength, thermal stability, surface smoothness, ease of handling, and waterproofness, and for example, a silicon wafer or glass substrate, a plastic film such as polyethersulfone, polyacrylate, polyetherimide, polyimide, polyethylene naphthalate, or polyethylene terephthalate, or an organic substrate coated with such a plastic film may be used.

[0122] According to one embodiment, the substrate has a single-layer or multi-layer structure.

[0123] For example, the substrate is a single layer containing resin. Another example is a multilayer structure in which the substrate has two or more layers, each containing two or more different resins. Yet another example is a multilayer structure in which the substrate has a resin-containing layer and a functional layer, the functional layer being, for example, an adhesive layer, a corrosion-resistant layer, an anti-reflective layer, a hard coating layer, or a combination thereof.

[0124] According to one embodiment, the thickness of the colloidal particle pattern is 1 nm to 200 nm. For example, the thickness of the colloidal particle pattern is 5 nm to 100 nm, 10 nm to 40 nm, or 15 nm to 25 nm.

[0125] [Electronic element] According to yet another aspect of the present invention, an electronic device comprising the colloidal particle pattern is provided.

[0126] According to one embodiment, the electronic element is a colloidal particle light-emitting element, and the colloidal particle light-emitting element includes a first electrode, a second electrode facing the first electrode, and an intermediate layer including a light-emitting layer disposed between the first electrode and the second electrode, wherein the light-emitting layer includes the colloidal particle pattern.

[0127] According to one embodiment, the electronic element is a thin-film transistor (TFT), an electrochromic device (EC), a light-emitting diode (LED), a solar cell, or a photodiode.

[0128] According to one embodiment, the electronic element is also a light-emitting element.

[0129] Figure 8 schematically shows an example of a light-emitting element according to one aspect of the present invention. The light-emitting element 10 includes a first electrode 110, an intermediate layer 150, and a second electrode 190, the intermediate layer 150 including a hole transport region 120 and a light-emitting layer 130.

[0130] A substrate (not shown) may be further disposed below the first electrode 110 and / or above the second electrode 190. As the substrate, a glass substrate or a plastic substrate that has excellent mechanical strength, thermal stability, transparency, surface smoothness, ease of handling and waterproofness can be used.

[0131] The first electrode 110 is formed, for example, by providing the material for the first electrode on the upper part of the substrate using a vapor deposition method or a sputtering method.

[0132] The first electrode 110 is also a transmissive electrode. To form the first electrode 110, which is a transmissive electrode, the material for the first electrode is selected from, but is not limited to, indium tin oxide (ITO), indium zinc oxide (IZO), tin oxide (SnO2), zinc oxide (ZnO), aluminum-doped zinc oxide (AZO), gallium-doped zinc oxide (GZO), antimony tin oxide (ATO), fluorine tin oxide (FTO), silver nanoparticles, silver nanowires, carbon nanotubes (CNTs), and any combination thereof. Alternatively, to form the first electrode 110, which is a semi-transmissive or reflective electrode, the material for the first electrode is selected from, but is not limited to, magnesium (Mg), silver (Ag), aluminum (Al), aluminum-lithium (Al-Li), calcium (Ca), magnesium-indium (Mg-In), magnesium-silver (Mg-Ag), and any combination thereof.

[0133] A hole transport region 120 may be positioned on the first electrode 110.

[0134] The hole transport region includes a hole injection layer, a hole transport layer, a light emission auxiliary layer, an electron blocking layer, or a combination thereof.

[0135] The hole transport layer may contain a hole transport compound.

[0136] For example, the hole-transporting compound is a hole-transporting polymer compound such as TFB (poly[(9,9-dioctylfluorenyl-2,7-diyl)-co-(4,4'-(N-(4-sec-butylphenyl)diphenylamine)]) or PTAA (poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine]).

[0137] [ka]

[0138] As another example, the hole-transporting compound is a hole-transporting low-molecular-weight compound that does not contain a π-electron-deficient nitrogen-containing ring. Examples of the hole-transporting low-molecular-weight compound include carbazole-containing compounds and amine compounds.

[0139] A light-emitting layer 130 may be placed on the hole transport region 120.

[0140] The light-emitting layer includes a colloidal particle pattern formed using the aforementioned colloidal particle ink composition.

[0141] The thickness of the light-emitting layer 130 is approximately 100 Å to approximately 1,000 Å, for example, approximately 200 Å to approximately 600 Å. When the thickness of the light-emitting layer 130 satisfies the above range, excellent light-emitting characteristics can be achieved without a substantial increase in the driving voltage.

[0142] An electron transport region 140 may be arranged on the light-emitting layer 130.

[0143] The electron transport region includes a buffer layer, a hole blocking layer, an electron regulating layer, an electron transport layer, an electron injection layer, or any combination thereof.

[0144] For example, the electron transport region may have a laminated structure such as an electron transport layer / electron injection layer, a hole blocking layer / electron transport layer / electron injection layer, an electron adjustment layer / electron transport layer / electron injection layer, or a buffer layer / electron transport layer / electron injection layer.

[0145] The electron transport region may include an electron transport compound.

[0146] For example, the electron-transporting compound is a metal-free compound containing at least one π-electron-deficient nitrogen-containing ring, BCP (2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline), Bphen (4,7-diphenyl-1,10-phenanthroline), Alq3, BAlq, TAZ (3-(biphenyl-4-yl)-5-(4-tert-butylphenyl)-4-phenyl-4H-1,2,4-triazole), NTAZ, or TPBi.

[0147] [ka]

[0148] The aforementioned "π-electron deficient nitrogen-containing ring" is a C1-C ring-forming moiety having at least one *-N=*' moiety. 60 It means a heterocyclic group.

[0149] For example, the "π-electron deficient nitrogen-containing ring" is i) a five-membered to seven-membered heteromonocyclic group having at least one *-N=*' moiety, ii) a heteropolycyclic group in which two or more five-membered to seven-membered heteromonocyclic groups having at least one *-N=*' moiety are fused together, or iii) at least one five-membered to seven-membered heteromonocyclic group having at least one *-N=*' moiety and at least one C5-C 60 It is a heteropolycyclic group in which carbon ring groups are fused with each other.

[0150] Examples of the aforementioned π-electron-deficient nitrogen-containing rings include imidazole, pyrazole, thiazole, isothiazole, oxazole, isoxazole, pyridine, pyrazine, pyrimidine, pyridazine, indazole, purine, quinoline, isoquinoline, benzoquinoline, phthalazine, naphthyridine, quinoxaline, quinazoline, cinnoline, phenantholidine, acridine, phenanthroline, phenazine, benzimidazole, isobenzothiazole, benzoxazole, isobenzoxazole, triazole, tetrazole, oxadiazole, triazine, thiadiazole, imidazopyridine, imidazopyrimidine, and azacarbazole.

[0151] The electron transport region may further include metals or metal complexes in addition to the electron transport compounds described above. For example, the electron transport region may further include oxides and halides of alkali metals, alkaline earth metals, and rare earth metals (e.g., fluorides, chlorides, bromides, iodides, etc.), alkali metal complexes, alkaline earth metal complexes, or combinations thereof. For example, the electron transport region may further include LiQ. For example, the electron transport region may further include molybdenum oxide (MoO x ) may further include.

[0152] [ka]

[0153] The thickness of the electron transport region is approximately 100 Å to approximately 2,000 Å, for example, approximately 150 Å to approximately 1,000 Å. When the thickness of the electron transport region satisfies the above range, the desired electron transport characteristics can be obtained without a substantial increase in the driving voltage.

[0154] A second electrode 190 is placed on the electron transport region 140. The second electrode 190 may be a cathode, which is an electron injection electrode.

[0155] As the material for the second electrode 190, a metal, alloy, electrically conductive compound, or a combination thereof having a low work function can be used.

[0156] The second electrode 190 includes, but is not limited to, at least one selected from lithium (Li), silver (Ag), magnesium (Mg), aluminum (Al), aluminum-lithium (Al-Li), calcium (Ca), magnesium-indium (Mg-In), magnesium-silver (Mg-Ag), silver-magnesium (Ag-Mg), ITO, and IZO. The second electrode 190 is a transmissive electrode, a semi-transmissive electrode, or a reflective electrode.

[0157] The second electrode 190 may have a single-layer structure or a multilayer structure having multiple layers.

[0158] Each layer of the aforementioned light-emitting element is formed using a variety of methods, including vacuum deposition, spin coating, casting, LB (Langmuir-Blodgett) method, inkjet printing, laser printing, and laser-induced thermal imaging (LITI) method.

[0159] According to one embodiment, the electronic element is also a flexible electronic element.

[0160] According to one embodiment, the electronic element is also a stretchable electronic element.

[0161] [Definition of substituents] In this specification, C5-C 60 A carbocyclic group refers to a monocyclic or polycyclic group having 5 to 60 carbon atoms, containing only carbon as the ring-forming atom. 60 The carbon ring group is either an aromatic carbon ring group or a non-aromatic carbon ring group. 60A carbocyclic group is a ring like benzene, a monovalent group like a phenyl group, or a divalent group like a phenylene group. Alternatively, the aforementioned C5-C 60 Depending on the number of substituents linked to the carbon ring group, the C5-C 60 The carbocyclic group can undergo various transformations, such as being a trivalent or tetravalent group.

[0162] In this specification, C1-C 60 A heterocyclic group is the aforementioned C5-C 60 A carbocyclic group has the same structure as a carbon ring, but in addition to carbon (with 1 to 60 carbon atoms), it includes at least one heteroatom selected from N, O, Si, P, and S as a ring-forming atom.

[0163] In this specification, C1-C 30 Alkyl groups refer to linear or branched aliphatic hydrocarbon groups having 1 to 30 carbon atoms. Specific examples include methyl, ethyl, propyl, isobutyl, sec-butyl, ter-butyl, pentyl, iso-amyl, hexyl, heptyl, n-octyl, and 2-ethylhexyl groups.

[0164] In this specification, C2-C 30 The alkenyl group is the C2-C 30 This refers to a hydrocarbon group that contains one or more carbon double bonds in the middle or terminal of an alkyl group. Specific examples include the ethenyl group, propenyl group, and butenyl group.

[0165] In this specification, C2-C 30 The alkynyl group is the C2-C 30 This refers to a hydrocarbon group that contains one or more carbon triple bonds in the middle or terminal of an alkyl group, and specific examples include the ethynyl group and the propynyl group.

[0166] In this specification, C1-C 30 The alkoxy group is -OA 101 (Here, A 101 is the aforementioned C1-C 30This refers to a monovalent group having the chemical formula (which is an alkyl group), and specific examples include the methoxy group, ethoxy group, and isopropyloxy group.

[0167] In this specification, C1-C 30 The alkylthio group is -SA 101 (Here, A 101 is the aforementioned C1-C 30 This refers to a monovalent group having the chemical formula of an alkyl group, and specific examples include the methylthio group, ethylthio group, and isopropylthio group.

[0168] In this specification, * and *' mean bonding sites with adjacent atoms in the chemical formula, unless otherwise defined.

[0169] The present invention will be described in more detail below with reference to examples. These examples are provided to illustrate the present invention in more detail, and the scope of the present invention is not limited by these examples.

[0170] [Examples] Synthesis Example 1: Preparation of Compounds 1-7

[0171] [ka]

[0172] (1) Production of crosslinkable compound 1 Under an argon atmosphere, a mixed solution of phenylacetyl chloride (1020 mg, 6.60 mmol) and pentaerythritol (150 mg, 1.10 mmol) was stirred at 140°C for 18 hours. After cooling to room temperature, the mixture was extracted using dichloromethane and distilled water. The organic layer was dried over MgSO4, filtered, and concentrated using a rotary evaporator. The substance was purified by silica gel column chromatography (eluent = ethyl acetate:hexane = 1:4 volume ratio) to obtain a white solid (483 mg, 72%). 1 H-NMR (400MHz, CDCl3) δ: 7.29-7.15 (m, 20H), 3.87 (s, 8H), 3.51 (s, 8H).

[0173] Under an argon atmosphere, the white solid (400 mg, 0.66 mmol) obtained in the previous step and p-ABSA (789 mg, 3.28 mmol) were dissolved in anhydrous THF (10 mL) and stirred for 10 minutes. DBU (670 mg, 4.40 mmol) was gradually added dropwise to the solution, and the mixture was stirred at room temperature for 12 hours. The mixture was then extracted using dichloromethane and distilled water. The organic layer was dried over MgSO4, filtered, and concentrated using a rotary evaporator. The substance was purified by silica gel column chromatography (developing solvent = ethyl acetate:hexane = 1:5 volume ratio). The obtained substance was recrystallized using chloroform and methanol, and crosslinkable compound 1 was obtained as an orange solid (433 mg, 92%). 1 H-NMR (400MHz, CDCl3) δ: 7.43-7.34 (m, 16H), 7.21-7.16 (t, J = 8.0Hz, 4H), 4.41 (s, 8H).

[0174] (2) Production of crosslinkable compound 2 Under an argon atmosphere, a mixed solution of phenylacetyl chloride (2193 mg, 14.18 mmol) and dipentaerythritol (500 mg, 1.97 mmol) was stirred at 120°C for 18 hours. After cooling to room temperature, the mixture was extracted using dichloromethane and distilled water. The organic layer was dried over MgSO4, filtered, and concentrated using a rotary evaporator. The substance was purified by silica gel column chromatography (eluent = ethyl acetate:hexane = 1:3 volume ratio) to obtain a viscous yellow liquid (1506 mg, 80%). 1 H-NMR (400MHz, CDCl3) δ: 7.31-7.18 (m, 30H), 3.87 (s, 12H), 3.53 (s, 12H), 2.87 (s, 4H).

[0175] Under an argon atmosphere, the viscous yellow liquid (1000 mg, 1.04 mmol) obtained in the previous step and p-ABSA (1795 mg, 7.47 mmol) were dissolved in anhydrous acetonitrile (20 mL) and stirred for 10 minutes. DBU (1580 mg, 10.38 mmol) was gradually added dropwise to the solution, and the mixture was stirred at room temperature for 24 hours. The mixture was then extracted using dichloromethane and distilled water. The organic layer was dried over MgSO4, filtered, concentrated using a rotary evaporator, and then purified by silica gel column chromatography (developing solvent = dichloromethane). The obtained substance was recrystallized using chloroform and methanol to obtain crosslinkable compound 2 as an orange solid (577 mg, 49%). 1 H-NMR (400MHz, CDCl3) δ: 7.39-7.33 (m, 24H), 7.17-7.13 (t, 6H), 4.37 (s, 12H).

[0176] (3) Production of crosslinkable compound 3 Under an argon atmosphere, a mixed solution of 4-methoxyphenylacetyl chloride (1605 mg, 11.02 mmol) and pentaerythritol (300 mg, 2.203 mmol) was stirred at 120°C for 12 hours. After cooling to room temperature, the mixture was extracted using dichloromethane and distilled water. The organic layer was dried over MgSO4, filtered, and concentrated using a rotary evaporator. The substance was purified by silica gel column chromatography (eluent = ethyl acetate:hexane = 1:1 volume ratio) to obtain a white solid (1498 mg, 93%). 1 H-NMR (400MHz, CDCl3) δ:7.09(d,J=8Hz,8H),6.82(d,J=8Hz,8H),3.91(s,8H),3.77(s,12H),3.46(s,8H).

[0177] Under an argon atmosphere, the white solid obtained in the previous step (300 mg, 0.412 mmol) and p-ABSA (611 mg, 2.470 mmol) were dissolved in anhydrous acetonitrile (7 mL) and stirred for 10 minutes. DBU (376 mg, 2.470 mmol) was gradually added dropwise to the solution, and the mixture was stirred at room temperature for 24 hours. The mixture was then extracted using dichloromethane and distilled water. The organic layer was dried over MgSO4, filtered, and concentrated using a rotary evaporator. The substance was purified by silica gel column chromatography (developing solvent = ethyl acetate:dichloromethane = 1:20 volume ratio). The obtained substance was recrystallized using chloroform and methanol to obtain crosslinkable compound 3 as an orange solid (433 mg, 92%). 1 H-NMR (400MHz, CDCl3) δ:7.31(d,J=8Hz,8H),6.91(d,J=8Hz,8H),4.36(s,8H),3.80(s,12H).

[0178] (4) Production of crosslinkable compound 4 Under an argon atmosphere, a mixed solution of 4-methoxyphenylacetyl chloride (1605 mg, 11.02 mmol) and pentaerythritol (300 mg, 2.203 mmol) was stirred at 120°C for 12 hours. After cooling to room temperature, the mixture was extracted using dichloromethane and distilled water. The organic layer was dried over MgSO4, filtered, and concentrated using a rotary evaporator. The substance was purified by silica gel column chromatography (eluent = ethyl acetate:hexane = 1:1 volume ratio) to obtain a white solid (1498 mg, 93%). 1 H-NMR (400MHz, CDCl3) δ:7.09(d,J=8Hz,8H),6.82(d,J=8Hz,8H),3.91(s,8H),3.77(s,12H),3.46(s,8H).

[0179] Under an argon atmosphere, the white solid (1000 mg, 1.372 mmol) obtained in the previous step was dissolved in anhydrous dichloromethane (40 mL) and stirred at -78°C for 1 hour. Then, BBr3 (1 M in DCM, 6.2 mL, 6.174 mmol) solution was gradually added dropwise, and the mixture was stirred at 0°C for 7 hours. After terminating the reaction by gradually adding saturated NaHCO3 aqueous solution dropwise, the mixture was extracted with ethyl acetate. The organic layer was dried over MgSO4, filtered, and concentrated using a rotary evaporator. The resulting substance formed a precipitate with hexane, yielding a white solid (551 mg, 60%). 1 H-NMR (400MHz, DMSO-d6) δ: 8.33 (s, 4H), 6.98 (d, J = 8Hz, 8H), 6.67 (d, J = 8Hz, 8H), 3.94 (s, 8H), 3.46 (s, 8H).

[0180] Under an argon atmosphere, the white solid obtained in the previous step (100 mg, 0.149 mmol), 1-bromo-2-methylpropane (611 mg, 2.470 mmol), and K2CO3 (144 mg, 1.043 mmol) were dissolved in anhydrous DMF (7 mL) and stirred at 110°C for 24 hours. After cooling to room temperature, the mixture was extracted using dichloromethane and distilled water. The organic layer was dried over MgSO4, filtered, and concentrated using a rotary evaporator. The substance was purified by silica gel column chromatography (eluent = ethyl acetate:hexane = 1:3 volume ratio) to obtain a viscous liquid product (73 mg, 54%). 1 H-NMR(400MHz, CDCl3)δ:7.07(d,J=8Hz,8H),6.81(d,J=8Hz,8H),3.93(s,8H ),3.67(d,J=8Hz,8H),3.45(s,12H),2.09-2.02(m,4H),1.01(d,J=4Hz,24H).

[0181] Under an argon atmosphere, the liquid obtained in the previous step (73 mg, 0.081 mmol) and p-ABSA (74 mg, 0.486 mmol) were dissolved in anhydrous acetonitrile (5 mL) and stirred for 10 minutes. DBU (117 mg, 0.486 mmol) was gradually added dropwise to the solution, and the mixture was stirred at room temperature for 24 hours. The mixture was then extracted using dichloromethane and distilled water. The organic layer was dried over MgSO4, filtered, and concentrated using a rotary evaporator. The substance was purified by silica gel column chromatography (developing solvent = ethyl acetate:hexane = 1:5 volume ratio). The obtained substance was recrystallized using dichloromethane and methanol, and crosslinkable compound 4 was obtained as an orange solid (9 mg, 11%). 1 H-NMR (400MHz, CDCl3)δ:7.29(d,J=8Hz,8H),6.90(d,J=8Hz,8H),4.34(s,8H),3.70(d,J=4Hz,8H),2.10-2.03(m,4H),1.02(d,J=4Hz,24H).

[0182] (5) Production of crosslinkable compound 5 A mixed solution of 4-fluorophenylacetyl chloride (1267 mg, 7.345 mmol) and pentaerythritol (200 mg, 1.469 mmol) was stirred at 140°C for 18 hours. After cooling to room temperature, the mixture was extracted using ethyl acetate and distilled water. The organic layer was dried over MgSO4, filtered, and concentrated using a rotary evaporator. The substance was purified by silica gel column chromatography (eluent = ethyl acetate:hexane = 1:2 volume ratio) to obtain a white solid (806 mg, 81%). 1 H-NMR (400MHz, CDCl3) δ: 7.14 (dd, J = 8Hz, 4Hz, 8H), 6.99 (t, J = 8Hz, 8H), 3.93 (s, 8H), 3.51 (s, 8H).

[0183] Under an argon atmosphere, the white solid obtained in the previous step (400 mg, 0.588 mmol) and p-ABSA (1019 mg, 4.114 mmol) were dissolved in anhydrous acetonitrile (10 mL) and stirred for 10 minutes. Then, DBU (626 mg, 2.470 mmol) was gradually added dropwise, and the mixture was stirred at room temperature for 24 hours. Next, the mixture was extracted using dichloromethane and distilled water. The organic layer was dried over MgSO4, filtered, and concentrated using a rotary evaporator. The substance was purified by silica gel column chromatography (developing solvent = dichloromethane). The obtained substance was recrystallized using chloroform and methanol to obtain crosslinkable compound 5 as an orange solid (78 mg, 17%). 1 H-NMR (400MHz, CDCl3) δ:7.38(t,J=8Hz,8H),7.08(t,J=8Hz,8H),4.38(s,8H).

[0184] (6) Production of crosslinkable compound 6 Under an argon atmosphere, a mixed solution of phenylacetyl chloride (7636 mg, 49.40 mmol) and D-mannitol (1000 mg, 5.489 mmol) was stirred at 130°C for 24 hours. After cooling to room temperature, the mixture was extracted using dichloromethane and distilled water. The organic layer was dried over MgSO4, filtered, and concentrated using a rotary evaporator. The substance was purified by silica gel column chromatography (eluent = ethyl acetate:hexane = 1:5 volume ratio) to obtain a pale yellow liquid (1177 mg, 24%). 1 H-NMR(400MHz,CDCl3)δ:7.32-7.19(m,30H),5.46(d,J=8Hz,2H),5.11-5.07(m,2H),4.20(s,1H),4.19 (s,1H),3.88(d,J=4Hz,1H),3.85(d,J=4Hz,1H),3.60(d,J=4Hz,4H),3.54(d,J=4Hz,4H),3.50(s,4H).

[0185] Under an argon atmosphere, the pale yellow liquid (1157 mg, 1.299 mmol) obtained in the previous step and p-ABSA (2808 mg, 11.69 mmol) were dissolved in anhydrous acetonitrile (50 mL) and stirred for 10 minutes. Then, DBU (1780 mg, 11.69 mmol) was gradually added dropwise, and the mixture was stirred at room temperature for 24 hours. Next, the mixture was extracted using dichloromethane and distilled water. The organic layer was dried over MgSO4, filtered, and concentrated using a rotary evaporator. The substance was purified by silica gel column chromatography (developing solvent = dichloromethane). The obtained substance was recrystallized using chloroform and methanol to obtain crosslinkable compound 6 as a yellow solid (279 mg, 21%). 1 H-NMR (400MHz, CDCl3)δ:7.40-7.14(m,30H),5.81(d,J=8Hz,2H),5.49(m,2H),4.70(d,J=12Hz,2H),4.35(dd,J=12Hz,4Hz,2H).

[0186] (7) Preparation of crosslinkable compound 7 A mixed solution of 4-fluorophenylacetyl chloride (1010 mg, 5.852 mmol) and dipentaerythritol (250 mg, 0.836 mmol) was stirred at 120°C for 18 hours. After cooling to room temperature, the mixture was extracted using dichloromethane and distilled water. The organic layer was dried over MgSO4, filtered, and concentrated using a rotary evaporator. The substance was purified by silica gel column chromatography (eluent = ethyl acetate:hexane = 1:2 volume ratio) to obtain a white solid (710 mg, 79%). 1 H-NMR (400MHz, CDCl3) δ: 7.17 (t, J = 4 Hz, 4 Hz, 12 H), 6.99 (t, J = 4 Hz, 12 H), 3.92 (s, 12 H), 3.52 (s, 12 H), 2.94 (s, 4 H).

[0187] Under an argon atmosphere, the white solid obtained in the previous step (400 mg, 0.374 mmol) and p-ABSA (897 mg, 3.735 mmol) were dissolved in anhydrous acetonitrile (10 mL) and stirred for 10 minutes. Then, DBU (568 mg, 3.735 mmol) was gradually added dropwise, and the mixture was stirred at room temperature for 24 hours. Next, the mixture was extracted using dichloromethane and distilled water. The organic layer was dried over MgSO4, filtered, and concentrated using a rotary evaporator. The substance was purified by silica gel column chromatography (developing solvent = chloroform:hexane = 30:1 volume ratio). The obtained substance was recrystallized using chloroform and hexane to obtain crosslinkable compound 7 as an orange solid (160 mg, 35%). 1 H-NMR (400MHz, CDCl3) δ: 7.34 (t, J = 4 Hz, 12 H), 7.03 (t, J = 8 Hz, 12 H), 4.34 (s, 12 H), 3.46 (s, 4 H).

[0188] Manufacturing Example 1: Manufacturing of Quantum Dot Ink Composition (1) Production of red quantum dot ink composition Zinc oleate (0.5M, Zn(OA)2) was prepared by heating 20 mmol of Zn(OAc)2 with 12 ml of OA at 150°C for 1 hour, and then diluting it with ODE to a total volume of 40 ml. Trioctylphosphine selenium (1M, TOPSe) and trioctylphosphine sulfur (1M, TOPS) were prepared by stirring 1 mmol of Se or S with 1 ml of TOP at room temperature overnight.

[0189] For red-emitting CdSe / ZnSe / ZnS quantum dots (r=3.0nm, l=5.0nm, h=2.0nm), 0.3 mmol of CdO, 1 mmol of OA, and 6 ml of ODE were placed in a three-necked flask and heated to 300°C under inert conditions to form a clear Cd(OA)2 solution. Next, 0.5 ml of TOPSe (1M) was rapidly added to the reaction flask. After 3 minutes, 5 ml of Cd,Se stock solution was added to the ODE to grow the CdSe core. Then, to grow the ZnSe shell, 20 ml of Zn(OA)2 (0.5M) and 7 ml of TOPSe were added successively. Finally, to grow the ZnS shell, 10 ml of Zn(OA)2 (0.5M) and 5 ml of TOPS were added. The synthesized red-emitting CdSe / ZnSe / ZnS quantum dots were purified five times by the precipitation / redispersion (ethanol / toluene) method.

[0190] A red quantum dot ink composition was prepared by adding compound 1 at a concentration of 5% by weight relative to the quantum dots to a red-emitting CdSe / ZnSe / ZnS quantum dot solution dissolved in toluene (55 mg / mL).

[0191] (2) Synthesis of green quantum dot ink composition The green-emitting InP / ZnSeS quantum dots were purchased from Uniam.

[0192] A green quantum dot ink composition was prepared by adding compound 1 at a concentration of 5% by weight relative to the quantum dots to a green luminescent InP / ZnSeS quantum dot solution dissolved in toluene (55 mg / mL).

[0193] (3) Synthesis of blue quantum dot ink composition Zn(OA)2 (0.5 M) stock solution was prepared as the cationic precursor for ODE. TOPSe (2 M), trioctylphosphine telluride (0.05 M, TOPTe), and diphenylphosphine selenide (0.2 M, DPPSe) were prepared as the anionic precursors. For the preparation of Zn(OA)2, 50 mmol of Zn(Ac)2 and 100 mmol of OA were placed in a flask, degassed at 130 °C for 6 hours, refilled with N2 gas, and then diluted to a concentration of 0.5 M with ODE. For the preparation of TOPSe, 100 mmol of Se powder was mixed with 50 mL of TOP under inert conditions at 160 °C for 5 hours. TOPTe was prepared by the same method.

[0194] 4 mmol of Se powder was reacted with 2 mL of DPP at 200 °C under inert conditions until the reaction was complete, and then diluted to a concentration of 0.2 M with toluene at RT to prepare DPPSe.

[0195] ZnSeTe / ZnSe / ZnS quantum dots (r = 1.8 nm, l = 1.8 nm, h = 0.6 nm) were synthesized with a slight modification of the previously reported method (1). 1.2 mL of Zn(OA)2 (0.5 M) and 10 mL of ODE were placed in a three-neck round-bottom flask, stirred and degassed at 110 °C. After degassing for 1 hour to completely remove water and oxygen, it was refilled with N2 gas. Then, a mixture of 1.43 mL of DPPSe (0.2 M) and 0.3 mL of TOPTe (0.05 M) was injected to synthesize the ZnSe 0.95 Te 0.05 core and maintained for 30 minutes. Then, the temperature was raised to 300 °C for 15 minutes to ensure the complete growth of the ZnSe 0.95 Te 0.05 core (r = 1.8 nm). To further grow a ZnSe shell on the core, 2 mL / 3.4 mL / 5 mL of Zn(OA)2 (0.5 M) and 0.25 mL / 0.425 mL / 0.625 mL of TOPSe (2 M) were sequentially injected at 300 °C. 10 mL of Zn(OA)2 (0.5 M) and 0.5 mL of DDT were further injected to grow a 0.6 nm-thick ZnS shell. The synthesized quantum dots were purified twice by the precipitation / redispersion (ethanol / toluene) method.

[0196] A blue quantum dot ink composition was prepared by adding compound 1 at a concentration of 20% by weight relative to the quantum dots to a blue-emitting ZnSeTe / ZnSe / ZnS quantum dot solution dissolved in toluene (55 mg / mL).

[0197] Example 1: Manufacturing of quantum dot pattern film using PIN photopatterning A quantum dot pattern film according to one embodiment is manufactured by the following method, referring to Figure 1.

[0198] (1) Formation of a photoresist pattern (PR pattern) The substrates were cleaned in ultrasonic baths filled with acetone and isopropyl alcohol for 10 minutes each, and then dried with a nitrogen gun. KL5301 photoresist (Kemlab Incorporation) was coated onto the SiO2 substrates using a multi-step spin coating process (500 rpm for 5 seconds, 4500 rpm for 40 seconds, and 2000 rpm for 2 seconds), and the resulting film was soft-baked on a hot plate at 105°C for 1 minute. After soft-baking, the photoresist film was exposed to UV light (365 nm, 9.8 mW / cm²) through a photomask using a mask aligner (MDA-400LJ, MIDAS system). 2 The photoresist film was irradiated with ) for 9 seconds, then hard-baked on a 115°C hot plate for 1 minute. The hard-baked photoresist film was developed with AZ300MIF developer (AZ Electronic Materials) for 4 seconds, and then washed with deionized water. The thickness of the resulting photoresist pattern was 70 nm.

[0199] (2) Formation of CdSe / ZnSe / ZnS quantum dot patterns The red quantum dot ink composition (QD ink) was spin-coated (4,000 rpm, 30 seconds) onto a substrate on which the photoresist pattern was formed, and the resulting film was annealed at 110°C for 20 minutes to induce a crosslinking reaction. Next, the photoresist pattern was stripped in an ultrasonic bath filled with acetone for 1 minute, and then dried using a nitrogen gun to form a 70 nm thick CdSe / ZnSe / ZnS quantum dot pattern (QD pattern).

[0200] Comparative Example 1: Manufacturing of quantum dot pattern film using direct photopatterning A mixed solution prepared by adding compound 1 (5% by weight relative to the quantum dots) to a red-emitting CdSe / ZnSe / ZnS quantum dot solution dissolved in toluene (60 mg / mL) was spin-coated onto a substrate (2,000 rpm for 60 seconds to create a 25 nm thick quantum dot pattern, and 4,000 rpm for 30 seconds) to obtain a 70 nm thick film. The resulting film was then exposed to UV light (365 nm, 4 mW / cm²) through a photomask. 2 The applicable exposure is 4.8 J / cm². 2 The film was crosslinked with ). Next, the uncrosslinked regions were selectively removed using toluene solvent, and the quantum dot pattern film of Comparative Example 1, in which a red quantum dot pattern was formed, was developed.

[0201] Evaluation Example 1 Figure 2 shows photographs and height profiles of the quantum dot pattern films produced in Example 1 and Comparative Example 1, respectively, as observed with an atomic force microscope (AFM).

[0202] Furthermore, five or more quantum dot pattern films were manufactured in each of Example 1 and Comparative Example 1, and their line edge roughness, line width variation, and surface roughness were measured. The results are shown in Figure 3. In each graph in Figure 3, the value on the vertical axis is the mean, and the error bar indicates the standard deviation.

[0203] Referring to Figures 2 and 3, it can be seen that the quantum dot pattern film according to one embodiment shows a significant reduction in edge roughness, line width variation, and surface roughness compared to the quantum dot pattern film of the comparative example, and exhibits excellent pattern fidelity.

[0204] Example 2: Manufacturing of a multicolor quantum dot pattern film A quantum dot pattern film according to one embodiment can also be manufactured as a multicolor quantum dot pattern film by the method described below, referring to Figure 4.

[0205] (1) First, a red-emitting CdSe / ZnSe / ZnS quantum dot ink composition was patterned using the method described in Example 1 to form a red quantum dot pattern.

[0206] (2) Subsequently, a photoresist pattern, which is a reverse pattern of the green quantum dot pattern, was formed on the substrate having the red-emitting CdSe / ZnSe / ZnS quantum dot pattern (PR patterning), and the thickness was reduced by plasma etching (reactive ion etching). Since the red-emitting CdSe / ZnSe / ZnS quantum dot pattern was covered with a photoresist layer, it was possible to prevent it from being directly exposed to the plasma during the etching process.

[0207] (3) Subsequently, a green light-emitting InP / ZnSeS quantum dot ink composition (QD ink) was used to pattern (Green spin-coating, annealing, and lift-off) in the same manner as in (1) to form red and green quantum dot patterns (RG patterns).

[0208] (4) Subsequently, the process described in (2) and (3) above was repeated using the blue-emitting ZnSeTe / ZnSe / ZnS quantum dot ink composition to pattern the red (R), green (G), and blue (B) quantum dot patterns (RGB pattern).

[0209] Evaluation Example 2 The quantum dot pattern film manufactured in Example 2 was observed with a fluorescence microscope, and the results are shown in Fig. 5.

[0210] Also, a photograph and a height profile of the quantum dot film manufactured in Example 2 observed by AFM (atomic force microscopy) are shown in Fig. 6.

[0211] Referring to Figs. 5 and 6, it can be seen that the RGB quantum dots in the quantum dot pattern film according to one embodiment were all formed with excellent fidelity.

[0212] Example 3: Fabrication of a red light-emitting element The pre-patterned ITO substrate was washed in an ultrasonic bath containing deionized water, acetone, and isopropyl alcohol for 10 minutes each, and then dried using a nitrogen gun. The entire QD-LED fabrication was performed under inert conditions.

[0213] 20 mg / mL of ZnO nanoparticles were spin-coated on the pre-patterned ITO substrate at 4000 rpm for 30 seconds, and then the film was annealed at 80 °C for 30 minutes. After adding 5 wt% of Compound 1 to 15 mg / mL of red-emitting CdSe / ZnSe / ZnS QDs, it was spin-coated on the ZnO nanoparticles at 4000 rpm for 30 seconds, and the formed QD film was annealed at 110 °C for 20 minutes. CBP (60 nm), MoO x (10 nm), and Al (120 nm) were thermally evaporated onto the QD film at evaporation rates of 0.4 Å / s to 1.0 Å / s, 0.1 Å / s to 0.2 Å / s, and 1.0 Å / s to 2.0 Å / s, respectively, at a pressure of ~10 -7 torr to fabricate a red-emitting device.

[0214]

Chemical formula

[0215] Example 4: Fabrication of a green light-emitting element A green light-emitting device was fabricated in the same manner as in Example 3, except that 15 mg / mL of green light-emitting InP / ZnSeS QDs were used instead of 15 mg / mL of red light-emitting CdSe / ZnSe / ZnS QDs during the formation of the QD film.

[0216] Example 5: Fabrication of a blue light-emitting element A blue light-emitting device was fabricated in the same manner as in Example 3, except that 10 mg / mL of blue light-emitting ZnSeTe / ZnSe / ZnS QDs were used instead of 15 mg / mL of red light-emitting CdSe / ZnSe / ZnS QDs during the formation of the QD film.

[0217] Comparative Examples 2-4 Red light-emitting devices, green light-emitting devices, and blue light-emitting devices were fabricated in the same manner as in Examples 3 to 5, except that Compound 1 was not used during the formation of the QD film.

[0218] Evaluation Example 3: Evaluation of Light-Emitting Device Characteristics The emission spectra, current density, luminance, and external quantum efficiency (EQE) of the light-emitting devices fabricated in Examples 3 to 5 and Comparative Examples 2 to 4 were measured using Keithley MU 236 and luminance meter PR650, respectively, and the results are shown in FIGS. 9 to 12.

[0219] Referring to FIG. 9, it can be seen that the emission spectra of the light-emitting devices of Examples 3 to 5 ("Crosslinked") are almost indistinguishable from those of the light-emitting devices of Comparative Examples 2 to 4 ("Pristine").

[0220] Also, referring to FIGS. 10 to 12, it can be seen that the current density (J)-voltage (V)-luminance (L) profiles and external quantum efficiency (EQE)-J profiles of the light-emitting devices of Examples 3 to 5 ("Crosslinked") are very similar to those of the light-emitting devices of Comparative Examples 2 to 4 ("Pristine").

[0221] This indicates that the use of a low-temperature activated crosslinking agent does not degrade the electrical and photoelectronic properties of the QD layer, and that the photopatterning process using the colloidal particle ink composition according to one embodiment is non-destructive.

[0222] Although the present invention has been described with reference to the embodiments described above, these are merely illustrative, and a person with ordinary skill in the art to which the present invention pertains will understand that a variety of modifications and equivalent other embodiments are possible therefrom. Therefore, the true scope of technical protection of the present invention must be determined by the technical idea of ​​the claims.

Claims

1. It contains colloidal particles and a low-temperature activated crosslinking agent, The colloidal particles include a semiconductor nanocrystal and an organic ligand bonded to the surface of the nanocrystal. Colloidal particle ink composition wherein the low-temperature activated crosslinking agent is a compound represented by the following chemical formula 1: 【Chemistry 1】 In the aforementioned chemical formula 1, L1 and L2 are independently single-bonded or C1-C30 alkylene groups substituted or unsubstituted with at least one R1. m1 and m2 are independently 1, 2, 3, 4, 5, or 6. Ar1 and Ar2 are C5-C60 carbon ring groups substituted or unsubstituted with at least one R1, or C1-C60 heterocyclic groups substituted or unsubstituted with at least one R1. n1 and n2 are independently 0, 1, 2, 3, 4, 5, 6, 7, 8, 9, or 10. The sum of n1 and n2 is 2 or more. Q1 to Q3 are, independently of each other, single bonds, O, S, C, C(R2), C(R2)(R3), or C1-C30 alkylene groups substituted or unsubstituted with at least one R1. X1 and X2 are independently O, S, Se, N(R4), C(R4)(R5), R1 to R5 are independently hydrogen, deuterium, -F, -Cl, -Br, -I, hydroxyl group, cyano group, C1-C30 alkyl group, C2-C30 alkenyl group, C2-C30 alkynyl group, C1-C30 alkoxy group, C1-C30 alkylthio group, C5-C60 carbocyclic group, C1-C60 heterocyclic group, or -Si(Q11)(Q12)(Q13). Q11 to Q13 are, independently of each other, hydrogen, deuterium, -F, -Cl, -Br, -I, a hydroxyl group, a cyano group, a C1-C30 alkyl group, a C2-C30 alkenyl group, a C2-C30 alkynyl group, a C1-C30 alkoxy group, or a C1-C30 alkylthio group.

2. The colloidal particle ink composition according to claim 1, wherein the colloidal particles are quantum dots.

3. The colloidal particle ink composition according to claim 1, wherein the semiconductor nanocrystal comprises a core and a shell covering at least a portion of the core.

4. The colloidal particle ink composition according to claim 1, wherein the semiconductor nanocrystal comprises a group III-VI semiconductor compound; a group II-VI semiconductor compound; a group III-V semiconductor compound; a group III-VI semiconductor compound; a group I-III-VI semiconductor compound; a group IV semiconductor compound; or any combination thereof.

5. The aforementioned organic ligand is C ４ -C ３０ The colloidal particle ink composition according to claim 1, comprising a fatty acid or a derivative thereof.

6. The colloidal particle ink composition according to claim 1, wherein the low-temperature activated crosslinking agent is a compound represented by the following chemical formula 2: 【Chemistry 2】 In the aforementioned chemical formula 2, L １ , L ２ 、m1、m2、n1、n2、X １ , X ２ , and Q １ ~Q ３ The explanation relating to this is the same as the explanation in claim 1, R １１ to R １５ and R ２１ to R ２５ The descriptions related to R to R and R to R are, independently of each other, the same as the description related to R in claim 1. １ ​

7. The colloidal particle ink composition according to claim 1, wherein the low-temperature activated crosslinking agent is one or more selected from the following compounds 1 to 7: 【Transformation 3】 【Chemistry 4】 【Transformation 5】

8. A method for forming a colloidal particle pattern using the colloidal particle ink composition described in any one of claims 1 to 7.

9. A step of applying a first colloidal particle ink composition containing first colloidal particles and a first low-temperature activated crosslinking agent onto a first photoresist pattern, The steps include annealing the coated first colloidal particle ink composition at a temperature of 0°C to 130°C, A colloidal particle pattern forming method according to claim 8, comprising the step of removing the first photoresist pattern to form a first colloidal particle pattern.

10. The colloidal particle pattern forming method according to claim 9, wherein the ratio of the thickness of the first photoresist pattern to the thickness of the first colloidal particle pattern is 1:1 to 1:0.

7.

11. The colloidal particle pattern forming method according to claim 9, further comprising the step of reducing the thickness of the first photoresist pattern and / or the first colloidal particle pattern by plasma etching.

12. The steps include forming a second photoresist pattern on the first colloidal particle pattern, The steps include applying a second colloidal particle ink composition containing second colloidal particles and a second low-temperature activated crosslinking agent onto the second photoresist pattern, The steps include annealing the coated second colloidal particle ink composition at a temperature of 0°C to 130°C, The process includes the step of removing the second photoresist pattern to form a second colloidal particle pattern, The colloidal particle pattern forming method according to claim 9, wherein the first colloidal particle and the second colloidal particle exhibit different hues from each other.

13. A colloidal particle pattern film formed using the colloidal particle ink composition described in any one of claims 1 to 7.

14. The colloidal particle pattern film includes a substrate and a colloidal particle pattern formed on the substrate. The colloidal particle pattern film according to claim 13, wherein the thickness of the colloidal particle pattern is 1 nm to 50 nm.

15. An electronic element comprising a colloidal particle pattern formed using the colloidal particle ink composition according to any one of claims 1 to 7.

16. The electronic element according to claim 15, wherein the electronic element is a thin-film transistor (TFT), an electrochromic device (EC), a light-emitting diode (LED), a solar cell, or a photodiode.

17. The aforementioned electronic element is a colloidal particle light-emitting device, The colloidal particle light-emitting device includes a first electrode, a second electrode facing the first electrode, and an intermediate layer including a light-emitting layer disposed between the first electrode and the second electrode. The electronic element according to claim 15, wherein the light-emitting layer includes the colloidal particle pattern.

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