Conveyance device, conveyance method, and method for manufacturing semiconductor device

Abstract

A conveyance device according to the present embodiment is a conveyance device (600) that conveys a substrate (100) in order to irradiate the substrate (100) with linear laser light (15), the conveyance device (600) comprising: a floating unit (10) that is provided with a plurality of floating unit cells (131) disposed to be separated by a gap (132), the floating unit (10) causing the substrate (100) to float on an upper surface thereof; a holding mechanism (12) that holds the substrate on the floating unit (10); a movement mechanism (13) that moves the holding mechanism in a conveying direction that is inclined from the line direction of the laser light; a seat (120) that supports the floating unit cells (131); and displacement gauges (129) that are provided in the gap (132) directly below an irradiation area (15a) of the laser light and detect the height of the substrate (100).

Description

Transport device, transport method, and semiconductor device manufacturing method

[0001] The present invention relates to a transfer device, a transfer method, and a method for manufacturing a semiconductor device.

[0002] Patent Document 1 discloses a laser annealing apparatus for forming a polycrystalline silicon thin film. In Patent Document 1, a projection lens focuses laser light onto a substrate so that the laser light forms a linear irradiation area. This crystallizes the amorphous silicon film to form a polysilicon film.

[0003] In Patent Document 1, a levitation unit levitates a substrate, and a transport unit transports the substrate. Furthermore, the levitation unit has a common loading and unloading position for the substrate. The transport unit transports the substrate along each side of the levitation unit. The substrate then circulates twice above the levitation unit, and laser light is irradiated onto almost the entire surface of the substrate.

[0004] JP 2018-64048 A

[0005] In such a conveying device for a laser irradiation apparatus, it is desirable to appropriately convey the substrate so that the laser irradiation process can be carried out quickly and stably, for example, to levitate the substrate with high levitation accuracy.

[0006] Other objects and novel features will become apparent from the description of this specification and the accompanying drawings.

[0007] According to one embodiment, the transport device is a transport device that transports a substrate in order to irradiate the substrate with a line-shaped laser beam, and includes a plurality of levitation unit cells arranged with a gap therebetween, a levitation unit that levitates the substrate on its upper surface, a holding mechanism that holds the substrate on the levitation unit, a moving mechanism that moves the holding mechanism in a transport direction that is inclined from the line direction of the laser beam in a top view so as to change the irradiation position of the laser beam on the substrate, a base that supports the levitation unit cell, and a displacement meter that detects the height of the substrate and is provided in a gap directly below the irradiation area of ​​the laser beam.

[0008] According to one embodiment, a transport device is a transport device that transports a substrate to irradiate the substrate with a line-shaped laser beam, and includes a plurality of levitation unit cells arranged with a gap therebetween, a levitation unit that levitates the substrate on its upper surface, a holding mechanism that holds the substrate on the levitation unit, a moving mechanism that moves the holding mechanism in a transport direction that is inclined from the line direction of the laser beam in a top view so as to change the irradiation position of the laser beam on the substrate, a base that supports the levitation unit cell, and a cooling unit that is provided on the base and arranged in the gap in the irradiation area of ​​the laser beam, the cooling unit having a cooling path arranged along the line direction of the laser beam.

[0009] According to one embodiment, the transport device is a transport device that transports a substrate to irradiate the substrate with a line-shaped laser beam, and includes a plurality of levitation unit cells arranged with gaps between them, a levitation unit that levitates the substrate on its upper surface, a holding mechanism that holds the substrate on the levitation unit, a moving mechanism that moves the holding mechanism in a transport direction that is inclined from the line direction of the laser beam in a top view so as to change the irradiation position of the laser beam on the substrate, a tray that has a through hole and supports the moving mechanism, a chamber that accommodates the levitation unit, the holding mechanism, the moving mechanism, and the tray, and an exhaust pipe that has an exhaust port arranged below the tray and is connected to the outside of the chamber.

[0010] According to one embodiment, a transport method is a transport method for transporting a substrate using a transport device in order to irradiate the substrate with a line-shaped laser beam, the transport device including a levitation unit having a plurality of levitation unit cells arranged with a gap therebetween, the levitation unit levitating the substrate on its upper surface, a base supporting the levitation unit cells, and a displacement meter for detecting the height of the substrate provided in a gap directly below an irradiation area of ​​the laser beam, the transport method including: (A1) a step of holding the substrate by a holding mechanism; (A2) a step of transporting the substrate on the levitation unit by a moving mechanism moving the holding mechanism; and (A3) a step of measuring the levitation height of the substrate during transport by the displacement meter.

[0011] According to one embodiment, a transport method is a transport method for transporting a substrate using a transport device in order to irradiate the substrate with a line-shaped laser beam, the transport device comprising: a levitation unit having a plurality of levitation unit cells arranged with a gap therebetween, the levitation unit levitating the substrate on its upper surface; a base supporting the levitation unit cells; and a cooling unit provided on the base and arranged in the gap in an irradiation area of ​​the laser beam, the cooling unit having a cooling path arranged along the line direction of the laser beam; and the transport method comprises: (B1) a step in which a holding mechanism holds the substrate; and (B2) a step in which a moving mechanism moves the holding mechanism to transport the substrate on the levitation unit.

[0012] According to one embodiment, a transport method is a transport method for transporting a substrate using a transport device in order to irradiate the substrate with a line-shaped laser beam, the transport device comprising a plurality of levitation unit cells arranged with a gap therebetween, a levitation unit that levitates the substrate on its upper surface, a holding mechanism that holds the substrate on the levitation unit, a moving mechanism that moves the holding mechanism in a transport direction that is inclined from the line direction of the laser beam in a top view so as to change the irradiation position of the laser beam on the substrate, a tray having a through hole and supporting the moving mechanism, a chamber that accommodates the levitation unit, the holding mechanism, the moving mechanism, and the tray, and an exhaust pipe that has an exhaust port arranged below the tray and is connected to the outside of the chamber, and the transport method comprises: (C1) a step in which the holding mechanism holds the substrate; and (C2) a step in which the moving mechanism moves the holding mechanism to transport the substrate on the levitation unit.

[0013] According to one embodiment, a method for manufacturing a semiconductor device includes: (sa1) forming an amorphous film on a substrate; and (sa2) annealing the amorphous film by irradiating a line-shaped laser beam onto the substrate while transporting the substrate using a transport device, thereby crystallizing the amorphous film and forming a crystallized film. The transport device includes a plurality of levitation unit cells arranged with a gap therebetween, a levitation unit that levitates the substrate on its upper surface, a holding mechanism that holds the substrate on the levitation unit, a moving mechanism that moves the holding mechanism in a transport direction that is inclined from the line direction of the laser beam in a top view so as to change the irradiation position of the laser beam on the substrate, a base that supports the levitation unit cell, and a displacement meter that detects the height of the substrate and is provided in a gap directly below the irradiation area of ​​the laser beam.

[0014] According to one embodiment, a method for manufacturing a semiconductor device includes: (sb1) forming an amorphous film on a substrate; and (sb2) annealing the amorphous film by irradiating a line-shaped laser beam onto the substrate while transporting the substrate using a transport device, thereby crystallizing the amorphous film and forming a crystallized film. The transport device transports the substrate to irradiate the line-shaped laser beam onto the substrate, and includes: a levitation unit that levitates the substrate on its upper surface, the levitation unit including a plurality of levitation unit cells arranged with a gap therebetween; a holding mechanism that holds the substrate on the levitation unit; a moving mechanism that moves the holding mechanism in a transport direction that is inclined from the line direction of the laser beam in a top view so as to change the irradiation position of the laser beam on the substrate; a pedestal that supports the levitation unit cell; and a cooling unit that is provided on the pedestal and arranged in the gap in the irradiation area of ​​the laser beam, the cooling unit having a cooling path arranged along the line direction of the laser beam.

[0015] According to one embodiment, a method for manufacturing a semiconductor device includes the steps of: (sc1) forming an amorphous film on a substrate; and (sc2) annealing the amorphous film by irradiating a line-shaped laser beam onto the substrate while transporting the substrate using a transport device, thereby crystallizing the amorphous film and forming a crystallized film. The transport device includes a plurality of levitation unit cells arranged with gaps between them, a levitation unit that levitates the substrate on its upper surface, a holding mechanism that holds the substrate on the levitation unit, a moving mechanism that moves the holding mechanism in a transport direction that is inclined from the line direction of the laser beam in a top view so as to change the irradiation position of the laser beam on the substrate, a tray having a through hole and supporting the moving mechanism, a chamber that accommodates the levitation unit, the holding mechanism, the moving mechanism, and the tray, and an exhaust pipe that has an exhaust port arranged below the tray and is connected to the outside of the chamber.

[0016] According to the embodiment, substrate transportation suitable for the laser irradiation process can be realized.

[0017] 1 is a top view schematically showing the configuration of a transport device used in a laser irradiation device; a side cross-sectional view schematically showing a laser irradiation device; a schematic view for explaining the configuration of a levitation unit; a top view schematically showing the detailed configuration of a transport device; a top view for explaining a transport process in the transport device; a top view for explaining a transport process in the transport device; a top view for explaining a transport process in the transport device; a top view for explaining a transport process in the transport device; a top view for explaining a transport process in the transport device; a top view for explaining a transport process in the transport device; a top view for explaining a transport process in the transport device; a top view for explaining a transport process in the transport device; a top view for explaining a transport process in the transport device; a top view for explaining a transport process in the transport device; a top view for explaining a transport process in the transport device; a top view for explaining a transport process in the transport device; a top view for explaining a placement of displacement gauges in an irradiation region; a side cross-sectional view for explaining a placement of displacement gauges in an irradiation region; a side cross-sectional view for explaining a cooling mechanism provided on a pedestal; a perspective view for explaining a pedestal having a displacement gauge and a cooling mechanism; a top view showing the configuration of a pedestal having a displacement gauge and a cooling mechanism; a perspective view showing the configuration of only a pedestal having a displacement gauge and a cooling mechanism. FIG. 1 is a top view schematically showing a transport unit that transports a substrate in the X direction and the configuration of its periphery. FIG. 2 is a side view schematically showing the configuration of the transport unit and an exhaust mechanism. FIG. 3 is a top view schematically showing the configuration of a tray. FIG. 4 is a side view for explaining the lifting and lowering operation of a holding mechanism. FIG. 5 is a side view for explaining the lifting and lowering operation of the holding mechanism. FIG. 6 is a side view for explaining the holding mechanism and its lifting mechanism. FIG. 7 is a cross-sectional view showing a simplified configuration of an organic EL display. FIG. 8 is a cross-sectional view showing steps in a method for manufacturing a semiconductor device according to the present embodiment. FIG. 9 is a cross-sectional view showing steps in a method for manufacturing a semiconductor device according to the present embodiment.

[0018] The transport device according to this embodiment is used in a laser irradiation device such as a laser annealing device. The laser annealing device is, for example, an excimer laser annealing (ELA) device that forms a low temperature polysilicon (LTPS) film. The transport device, laser irradiation device, method, and manufacturing method according to this embodiment will be described below with reference to the drawings.

[0019] Embodiment 1. The basic configuration of a conveying device and a laser irradiation device according to this embodiment will be described using Figures 1 to 3. Figure 1 is a top view that schematically shows the basic configuration of a laser irradiation device 1. Figure 2 is a side cross-sectional view that schematically shows the configuration of the laser irradiation device 1. Figure 3 is a side cross-sectional view that schematically shows the configuration of an irradiation area that is irradiated with laser light and its vicinity.

[0020] 1 to 3 are conceptual diagrams showing only the basic configuration of the transport device and the laser irradiation device, and some components are omitted. For example, in Fig. 1, the transport device 600 is shown in a simplified form. Specifically, in Fig. 1, the laser irradiation unit 14, the precision levitation region 31, the semi-precision levitation region 32, the rough levitation region 33, the precision levitation unit 111, the semi-precision levitation unit 112, and the rough levitation unit 113 are omitted.

[0021] In the following figures, an xyz three-dimensional Cartesian coordinate system is shown where appropriate for ease of explanation. The z direction is the vertical direction, and the y direction is the linear direction along the linear irradiation area 15a. The x direction is a direction perpendicular to the z direction and the y direction. In other words, the y direction is the longitudinal direction of the linear irradiation area 15a, and the x direction is the lateral direction perpendicular to the longitudinal direction.

[0022] 1 and 2, the laser irradiation device 1 includes a levitation unit 10, a transport unit 11, and a laser irradiation section 14. The levitation unit 10, the transport unit 11, and the laser irradiation section 14 constitute a transport device 600. Furthermore, the transport device 600 may include a base 120, a surface plate 125, a stand 126, a sealed box 20, a chamber 500, and an exhaust unit 510, as shown in FIG.

[0023] As shown in Fig. 2, the levitation unit 10 is configured to eject gas from the surface of the levitation unit 10. The levitation unit 10 levitates the substrate 100 using its upper surface. The gas ejected from the surface of the levitation unit 10 is blown onto the underside of the substrate 100, causing the substrate 100 to levitate. For example, the substrate 100 is a glass substrate. When the substrate 100 is transported, the levitation unit 10 adjusts the amount of levitation so that the substrate 100 does not come into contact with other mechanisms (not shown) arranged above the substrate 100.

[0024] 3, the levitation unit 10 is mainly divided into a precision levitation region 31, a semi-precise levitation region 32, and a rough levitation region 33. The precision levitation region 31 is a region that includes the irradiation region 15a of the laser light 15. That is, in the xy plane view, the precision levitation region 31 is a region that overlaps with the focus of the laser light (irradiation region 15a). The precision levitation region 31 is larger than the irradiation region 15a.

[0025] The semi-precision levitation region 32 is a region adjacent to the precision levitation region 31. In the x direction, the semi-precision levitation region 32 is disposed on both sides of the precision levitation region 31. The semi-precision levitation region 32 is larger than the precision levitation region 31.

[0026] The rough floating region 33 is a region adjacent to the semi-precise floating region 32. In other words, the semi-precise floating region 32 is disposed between the rough floating region 33 and the precision floating region 31. In the X direction, the rough floating region 33 is disposed on both sides of the precision floating region 31. In other words, the rough floating region 33 is disposed separately on the +x side and the −x side of the semi-precise floating region 32. In the xy plane view, the semi-precise floating region 32 and the rough floating region 33 are regions that do not overlap with the focus of the laser light (irradiation region 15a).

[0027] As shown in Fig. 3, the levitation unit 10 includes a plurality of levitation unit cells 131. The levitation unit cell 131 provided in the precision levitation region 31 is referred to as a precision levitation unit 111. The levitation unit cell 131 provided in the semi-precise levitation region 32 is referred to as a semi-precise levitation unit 112. The levitation unit cell 131 provided in the rough levitation region 33 is referred to as a rough levitation unit 113. Note that although gaps 132 are provided between all of the levitation unit cells 131 in Fig. 3, some of the levitation unit cells 131 may not have gaps 132. In other words, the levitation unit cells 131 may be in contact with adjacent levitation unit cells 131.

[0028] The precision levitation unit 111, the semi-precise levitation unit 112, and the rough levitation unit 113 each spray gas (e.g., air) upward. The gas sprayed from the precision levitation unit 111, the semi-precise levitation unit 112, and the rough levitation unit 113 may be an inert gas such as nitrogen gas. The substrate 100 is levitated by the gas being sprayed onto the underside of the substrate 100. This puts the levitation unit 111 and the substrate 100 into a non-contact state. Furthermore, the precision levitation unit 111 and the semi-precise levitation unit 112 suck in gas present between the substrate 100 and the levitation unit 10. The rough levitation unit 113 is configured to be able to suck in gas, just like the semi-precise levitation unit 112.

[0029] For example, a gas supply source (not shown) for supplying gas is connected to the precision levitation unit 111, the semi-precise levitation unit 112, and the rough levitation unit 113. Furthermore, a vacuum generation source (not shown) for sucking gas is connected to the precision levitation unit 111, the semi-precise levitation unit 112, and the rough levitation unit 113. The gas supply source is a compressor, a gas cylinder, or the like, and supplies compressed gas. The vacuum generation source is a vacuum pump, an ejector, or the like.

[0030] Precision levitation unit 111 has a higher levitation amount accuracy than semi-precise levitation unit 112 and rough levitation unit 113. Semi-precise levitation unit 112 has a higher levitation amount accuracy than rough levitation unit 113. Laser light is irradiated onto substrate 100 in precision levitation region 31, which has the highest levitation amount accuracy. For example, semi-precise levitation unit 112 is configured to levitate substrate 100 with an accuracy between the accuracy with which precision levitation unit 111 levitates substrate 100 and the accuracy with which rough levitation unit 113 levitates substrate 100.

[0031] For example, in the irradiation area 15a and the surrounding precision levitation area 31, high precision is required for the levitation amount of the substrate 100. Therefore, a precision levitation unit 111 that can control the levitation amount with high precision is used. The precision levitation unit 111 is a precision levitation unit formed of a porous body such as ceramic. Porous carbon, porous alumina ceramic, porous SiC ceramic, etc. can be used as the porous body.

[0032] The precision levitation unit 111 then ejects gas upward. The precision levitation unit 111 may also be provided with suction holes for sucking in gas. The porous body has suction holes machined at predetermined intervals that reach the upper surface. The suction holes are minute holes that create negative pressure between the substrate 100 and the precision levitation unit. The porous body then ejects gas from almost the entire surface except for the suction holes. The ejection surface that creates positive pressure is formed on almost the entire surface except for the suction holes.

[0033] The semi-precise levitation unit 112 and the rough levitation unit 113 are made of a metal material. For example, the semi-precise levitation unit 112 and the rough levitation unit 113 are made of a metal block having a hollow portion. A plurality of nozzle holes are formed in the hollow portion and reach the upper surface of the metal block. Furthermore, the metal block may be provided with suction holes for sucking gas. Note that either the semi-precise levitation unit 112 or the rough levitation unit 113 can be omitted.

[0034] The rough levitation units 113, the semi-precise levitation units 112, and the precision levitation units 111 are also collectively referred to as levitation unit cells 131. In the rough levitation region 33, a plurality of rough levitation units 113 are provided as levitation unit cells 131. In the semi-precise levitation region 32, a plurality of semi-precise levitation units 112 are provided as levitation unit cells 131. In the precision levitation region 31, a plurality of precision levitation units 111 are provided as levitation unit cells 131. The levitation unit cells 131 are arranged with gaps 132 between them.

[0035] The levitation unit cell 131 is fixed to a pedestal 120. That is, the pedestal 120 supports the levitation unit cell 131. The pedestal 120 is fixed onto a surface plate 125. The surface plate 125 is fixed onto a frame 126. The frame 126 supports the surface plate 125. The frame 126 is fixed to the floor or the like.

[0036] The base 120 is a metal plate made of, for example, aluminum or an aluminum alloy. The precision levitation unit 111, the semi-precise levitation unit 112, and the rough levitation unit 113 are fixed to the base 120 by, for example, bolts or the like. The base 120 supports the precision levitation unit 111, the semi-precise levitation unit 112, and the rough levitation unit 113, which are levitation unit cells 131. The top surfaces of the precision levitation unit 111, the semi-precise levitation unit 112, and the rough levitation unit 113 are substantially at the same height. That is, the top surface (levitation surface) of the levitation unit 10 is substantially flat. The surface of the base 120 may be polished or otherwise processed to have a predetermined flatness. Furthermore, an internal space (not shown) that serves as a flow path for ejecting or sucking gas may be provided inside the base 120. The levitation unit cells 131 may suck or eject gas through the internal space of the base 120.

[0037] 3, the base 120 is formed as a single unit, but the base 120 may be formed as a plurality of separate pieces. In other words, the surface plate 125 may support a plurality of bases 120. The configuration of the base 120 will be described later.

[0038] The surface plate 125 is primarily made of a stone material such as granite. The surface plate 125 is a surface plate whose upper surface can be precisely flattened, and it maintains its flatness with minimal deflection during laser processing. The material of the surface plate 125 is not limited to granite, and may be made primarily of a stone material other than granite. Furthermore, when the surface plate 125 is attached to the base 126, the base 126 may be leveled. The surface plate 125 may be provided only in the precision levitation region 31, which requires high levitation accuracy. In other words, the surface plate 125 may be provided only directly below the precision levitation unit 111. The rough levitation region 33 and the semi-precise levitation region 32 may be disposed on a metal stage or base 126.

[0039] In top view, the irradiation area 15a is located between the levitation unit cells 131. Therefore, a gap 132 is disposed directly below the irradiation area 15a. In other words, no levitation unit cell 131 is present directly below the irradiation area 15a. This prevents the levitation unit cell 131 from being heated by the laser irradiation. Furthermore, the base 120 may have a cooling unit, which will be described later.

[0040] A seal box 20 is disposed directly above the irradiation region 15a. The seal box 20 is locally provided so as to cover the irradiation region 15a when viewed from above. A gas inlet (not shown) is provided in the seal box 20, and an inert gas such as nitrogen gas is introduced into the seal box 20. The gas introduced into the seal box 20 is exhausted from an opening 20a on the bottom surface of the seal box 20. The opening 20a through which the inert gas is exhausted is located directly above the irradiation region 15a of the laser beam 15. This makes it possible to suppress chemical reactions, such as oxidation of the film on the substrate 100, caused by irradiation with the laser beam 15. The seal box 20 may be provided with a window or the like that allows the laser beam 15 to pass through.

[0041] The chamber 500 houses the components provided in the transfer device 600. In other words, the laser irradiation unit 14, the levitation unit 10, etc. are arranged in a space surrounded by the chamber 500. Furthermore, an exhaust unit 510 is provided outside the chamber 500. The exhaust unit 510 exhausts gas present in the space inside the chamber 500. By providing the exhaust unit 510, the airflow in the space inside the chamber 500 can be controlled.

[0042] The transport unit 11 shown in FIG. 1 transports a floating substrate 100 in a transport direction. The transport unit 11 includes a holding mechanism 12 and a moving mechanism 13. The holding mechanism 12 holds the substrate 100. For example, the holding mechanism 12 can be configured using a vacuum suction mechanism. The vacuum suction mechanism is made of a metal material such as an aluminum alloy. Alternatively, the holding mechanism 12 may be made of a resin material such as PEEK (polyether ether ketone). The upper surface of the holding mechanism 12 has suction grooves, suction holes, etc. formed thereon. The holding mechanism 12 may also be made of a porous material.

[0043] The holding mechanism 12 (vacuum suction mechanism) is connected to an exhaust port (not shown), which is connected to an ejector, a vacuum pump, etc. Therefore, a negative pressure for sucking gas acts on the holding mechanism 12, and the substrate 100 can be held by using the holding mechanism 12.

[0044] The holding mechanism 12 also includes a lifting mechanism (not shown) for performing the suction operation. The lifting mechanism includes, for example, an actuator such as an air cylinder or a motor. For example, the holding mechanism 12 lifts up to the suction position and picks up the substrate 100. The holding mechanism 12 also lowers to the standby position when the suction is released.

[0045] The holding mechanism 12 holds the substrate 100 by sucking the surface (lower surface) of the substrate 100 opposite to the surface (upper surface) irradiated with the laser light 15, that is, the surface of the substrate 100 facing the levitation unit 10. In Fig. 1, the holding mechanism 12 holds the end of the substrate 100 in the +y direction.

[0046] The moving mechanism 13 included in the transport unit 11 is connected to the holding mechanism 12. The moving mechanism 13 is configured to be able to move the holding mechanism 12 in the transport direction. The transport unit 11 (holding mechanism 12 and moving mechanism 13) is provided on the end side of the levitation unit 10 in the +y direction, and the substrate 100 is transported by the moving mechanism 13 moving in the transport direction while the holding mechanism 12 holds the substrate 100.

[0047] 1, for example, the moving mechanism 13 is configured to slide the end of the levitation unit 10 in the +y direction along the transport direction. When the moving mechanism 13 slides the end of the levitation unit 10 along the transport direction, the substrate 100 is transported along the transport direction. The transport direction is inclined from the x direction. For example, if the angle formed between the x direction and the transport direction is θ, θ is greater than 0°.

[0048] Therefore, when viewed from above, the levitation unit 10 has a trapezoidal shape with four sides. Specifically, the levitation unit 10 has two sides parallel to the y direction of the levitation unit 10, one side parallel to the x direction, and one side inclined from the x direction (also referred to as the inclined side 10e). Of course, θ may be 0°. In other words, the transport direction may be parallel to the X direction. In this case, the planar shape of the levitation unit 10 may be rectangular.

[0049] The transport speed of the substrate 100 can be controlled by controlling the movement speed of the movement mechanism 13. The movement mechanism 13 includes, for example, an actuator such as a motor (not shown), a linear guide mechanism, an air bearing, etc. The movement mechanism 13 includes, for example, a guide mechanism such as a Cableveyor (registered trademark).

[0050] Laser light 15 is irradiated onto substrate 100. An irradiation area 15a of substrate 100 irradiated with laser light 15 is linear, with the longitudinal direction being the y direction. That is, irradiation area 15a has the longitudinal direction (line direction) in the y direction and the lateral direction in the x direction.

[0051] For example, the laser irradiation unit 14 has an excimer laser light source or the like that generates laser light. Furthermore, the laser irradiation unit 14 has an optical system that guides the laser light to the substrate 100. The laser irradiation unit 14 has a lens that focuses the laser light 15 on the substrate 100. For example, the laser irradiation unit 14 has a cylindrical lens for forming a linear irradiation area 15a. The substrate 100 is irradiated with a line-shaped laser light 15 (line beam) whose focal point extends in the y direction. The focal point of the laser light 15 is formed on the substrate 100. Therefore, in order to suppress in-plane variations, high precision is required for the floating amount in the precision floating region 31.

[0052] The substrate 100 is, for example, a glass substrate on which an amorphous film (amorphous silicon film 101a) is formed. The amorphous film can be crystallized by irradiating the amorphous film with laser light 15 and performing an annealing process. For example, the amorphous silicon film 101a can be converted into a polycrystalline silicon film (polysilicon film 101b).

[0053] In the laser irradiation device 1, the substrate 100 is levitated using the levitation unit 10, while the lower surface of the substrate 100 is held using the transport unit 11, and the substrate 100 is transported in the transport direction. At this time, the transport unit 11 provided in the laser irradiation device 1 transports the substrate 100 while holding the substrate 100 in a position that does not overlap with the irradiation region 15a in a plan view (i.e., when viewed from the z direction). In other words, as shown in FIG. 1 , when the substrate 100 is transported in the transport direction, the position at which the transport unit 11 holds the substrate 100 (corresponding to the position of the holding mechanism 12) does not overlap with the irradiation region 15a.

[0054] For example, the planar shape of the substrate 100 is a quadrangle (rectangle) having four sides, and the transport unit 11 (holding mechanism 12) holds only one of the four sides of the substrate 100. The transport unit 11 (holding mechanism 12) holds the substrate 100 at a position where it is not irradiated with laser light while it is being transported.

[0055] With this configuration, the position where the transport unit 11 holds the substrate 100 (corresponding to the position of the holding mechanism 12) can be separated from the irradiation area 15a. The irradiation area 15a is approximately half of the substrate 100 on the -y side, and the transport unit 11 holds the end on the +y side. This increases the distance between the irradiation area 15a and the area near the holding mechanism 12 where deflection becomes large. This reduces the effect of deflection of the substrate 100 caused by the holding mechanism 12 during laser irradiation.

[0056] In the y direction, the length of the irradiation region 15a is approximately half the length of the substrate 100. Therefore, when the substrate 100 passes through the irradiation region 15a once, the amorphous silicon film 101a is crystallized in approximately half the area of ​​the substrate 100. Then, after the substrate 100 is rotated 180 degrees around the z axis by a rotation mechanism (not shown), the transport unit 11 transports the substrate 100 in the −x direction. Alternatively, after transporting the rotated substrate 100 in the −x direction, the transport unit 11 may transport it again in the +x direction. Then, the laser light is irradiated onto the substrate 100 during transport in the −x direction or during transport again in the +x direction after the 180-degree rotation. As a result, the substrate 100 passes through the irradiation region 15a, and the amorphous silicon film 101a is crystallized in the remaining half of the area of ​​the substrate 100. By moving the substrate 100 back and forth in this manner, the amorphous silicon film 101a is converted into the polysilicon film 101b over almost the entire surface of the substrate 100.

[0057] Furthermore, the transport direction is tilted from the x-direction, which is perpendicular to the linear irradiation area 15a. In other words, the substrate 100 is transported in a transport direction tilted from the edge of the rectangular substrate 100. By tilting the transport direction from the x-direction in a top view, substrate transport suitable for the laser irradiation process can be achieved. This allows the silicon film crystallization process to be performed appropriately, improving display quality. This configuration can, for example, prevent the occurrence of moire.

[0058] For example, assume that the substrate 100 is a glass substrate for an organic EL display device. When the display area of ​​the organic EL display device is rectangular, the edges of the display area are arranged parallel to the edges of the substrate 100. In other words, the organic EL display device has a rectangular display area with its short sides in the x and y directions. When the transport direction is parallel to the x direction, the laser light is irradiated onto the substrate 100 with the pixel arrangement direction and the irradiation area 15a parallel.

[0059] As shown in this embodiment, the laser irradiation process can be performed appropriately by tilting the transport direction from the x-direction. To change the laser irradiation position on the substrate 100, the moving mechanism 13 moves the holding mechanism 12 in a transport direction tilted from the x-direction perpendicular to the longitudinal direction of the linear irradiation region 15a in a top view. Therefore, the crystallization process of the silicon film can be performed appropriately. For example, the occurrence of moire can be prevented, and display quality can be improved.

[0060] (Circular Transfer) Next, the configuration of the transfer device 600 will be described with reference to FIG. 4. FIG. 4 is a top view showing the configuration of the transfer device 600. Note that the description of the same content as that described in FIGS. 1 to 3 will be omitted as appropriate. Also, the transfer device 600 is equipped with a displacement meter 129, a cooling unit 1201b, an exhaust mechanism 170, etc., which will be described later, but these are omitted in FIG. 4. Note that the displacement meter 129, the cooling unit 1201b, the exhaust mechanism 170, etc. can be omitted as appropriate.

[0061] The transport device 600 has a levitation unit 10 and end levitation units 671 to 676. The levitation unit 10 levitates a substrate (not shown in FIG. 4 ) that is an object to be processed. When viewed from above, the levitation unit 10 is trapezoidal. The levitation unit 10 has two sides parallel to the y direction, one side parallel to the x direction, and one side inclined from the x direction (also referred to as the inclined side 10e). The angle formed by the inclined side 10e and the x direction is preferably greater than 0°. The end levitation units 671 to 676 levitate the substrate end that protrudes from the levitation unit 10.

[0062] For the sake of explanation, the levitation unit 10 is divided into six regions 60a to 60f when viewed from above. Specifically, the levitation unit 10 includes first to fourth regions 60a to 60d, a process region 60e, and a transit region 60f. The first region 60a is a trapezoidal region including corners on both the -x and +y sides (the upper left corner in FIG. 4). The second region 60b is a trapezoidal region including corners on both the +x and +y sides (the upper right corner in FIG. 4). The third region 60c is a rectangular region including corners on both the +x and -y sides (the lower right corner in FIG. 4). The fourth region 60d is a rectangular region including corners on both the -x and -y sides (the lower left corner in FIG. 4).

[0063] The process area 60e is a trapezoidal area located between the first area 60a and the second area 60b. The process area 60e is an area including the irradiation area 15a where the laser light is irradiated. The passage area 60f is a rectangular area located between the third area 60c and the fourth area 60d.

[0064] The +y-side half of the levitation unit 10 (the upper half of FIG. 4) is made up of, in order from the -x side (the left side of FIG. 4), a first region 60a, a process region 60e, and a second region 60b. The -y-side half of the levitation unit 10 (the lower half of FIG. 4) is made up of, in order from the +x side, a third region 60c, a passing region 60f, and a fourth region 60d.

[0065] The fourth region 60d is an input region into which the substrate 100 is loaded, and an output region from which the substrate 100 is unloaded. For example, a transfer machine (not shown), such as a transfer robot, is provided on the -X side of the fourth region 60d. The transfer machine then loads the substrate 100 into the fourth region 60d. Similarly, the transfer machine unloads the substrate from the fourth region 60d. Pusher pins may be used to load and unload the substrate 100.

[0066] The levitation unit 10 includes a rotation mechanism 68 and alignment mechanisms 69a and 69b. The rotation mechanism 68 rotates the substrate. The alignment mechanisms 69a and 69b align the substrate. The first region 60a and the second region 60b are provided with the alignment mechanisms 69a and 69b, respectively. The rotation mechanism 68 is provided in the fourth region 60d. The operations of the rotation mechanism 68 and the alignment mechanisms 69a and 69b will be described later.

[0067] The end levitation units 671 to 676 are arranged outside the levitation unit 10. The end levitation units 671 to 676 are arranged along the outer periphery of the trapezoidal levitation unit 10. The end levitation units 671 to 676 are provided along the end sides of the levitation unit 10. When viewed from above, the end levitation units 671 to 676 are arranged to surround the outer periphery of the levitation unit 10.

[0068] End levitation units 671 and 672 are arranged on the -x side of levitation unit 10. End levitation unit 673 is arranged on the +y side of levitation unit 10. End levitation unit 674 is arranged on the +x side of levitation unit 10. End levitation units 675 and 676 are arranged on the -y side of levitation unit 10.

[0069] The end floating units 671 and 672 are arranged along the edge on the -x side of the floating unit 10. In other words, the end floating units 671 and 672 are each provided along the y direction. The width of the end floating unit 671 in the x direction is also wider than that of the end floating unit 672. The end floating unit 671 is arranged on the -y side of the end floating unit 672.

[0070] The end levitation units 673 are arranged along the edge on the +y side of the levitation unit 10. In other words, the end levitation units 673 are provided along the inclined edge 10e of the levitation unit 10. The end levitation units 674 are arranged along the edge on the +x side of the levitation unit 10. In other words, the end levitation units 674 are each provided along the y direction.

[0071] End floating units 675, 676 are arranged along the edge on the -y side of floating unit 10. In other words, end floating units 675, 676 are each provided along the x direction. Furthermore, the width of end floating unit 676 in the y direction is wider than end floating unit 675. End floating unit 676 is arranged on the -x side of end floating unit 675.

[0072] A transport unit 11a is provided between the floating unit 10 and the end floating unit 671. A transport unit 11a is also disposed between the floating unit 10 and the end floating unit 672. The transport unit 11a is formed along the y direction. The transport unit 11a transports the substrate in the +y direction. That is, the transport unit 11a transports the substrate 100 from the fourth region 60d toward the first region 60a.

[0073] A transport unit 11b is provided between the floating unit 10 and the end floating unit 673. The transport unit 11b is formed along the inclined side 10e. The transport unit 11b transports the substrate in a direction parallel to the inclined side 10e. In other words, the transport unit 11b transports the substrate 100 from the first region 60a to the second region 60b.

[0074] A transport unit 11c is provided between the floating unit 10 and the end floating unit 674. The transport unit 11c is formed along the y direction. The transport unit 11c transports the substrate 100 in the -y direction. In other words, the transport unit 11c transports the substrate 100 from the second region 60b toward the third region 60c.

[0075] A transport unit 11d is provided between the floating unit 10 and the end floating unit 675. A transport unit 11d is also disposed between the floating unit 10 and the end floating unit 676. The transport unit 11d is formed along the x direction. The transport unit 11a transports the substrate in the -x direction. That is, the transport unit 11d transports the substrate from the third region 60c to the fourth region 60d.

[0076] The transport units 11a to 11d are equipped with the holding mechanism 12 and the moving mechanism 13 shown in Fig. 1. The operations of the holding mechanism 12 and the moving mechanism 13 will be described later.

[0077] The longitudinal direction of the laser light irradiation area 15a is the y direction. That is, a linear irradiation area 15a is formed with the y direction as its longitudinal direction. The laser light is irradiated onto the substrate 100 while the substrate 100 is transported in a direction parallel to the inclined side 10e. The laser irradiation process is performed while the substrate 100 is moving from the first area 60a to the second area 60b. In this embodiment as well, the amorphous silicon film is converted into a polysilicon film by irradiating the substrate with laser light from the laser light source.

[0078] In the levitation unit 10, a precision levitation unit 111 is disposed in and around the irradiation region 15a. The precision levitation unit 111 has a higher levitation amount precision than the semi-precision levitation units and rough levitation units in other regions. Therefore, in the process region 60e including the irradiation region 15a, the laser light is irradiated onto the levitated substrate 100 with a more precise levitation amount than the other regions 60a to 60d, 60f. This allows the laser light to be irradiated onto the substrate 100 stably. Furthermore, regions other than the irradiation region 15a, such as the passing region 60f, the third region 60c, and the fourth region 60d, are formed without using the expensive precision levitation unit 111. This reduces the cost of the device.

[0079] Next, the procedure of the transport method using the levitation unit 10 will be described with reference to FIGS. 5 to 12. Here, the fourth region 60d is the loading and unloading position for the substrate 100. The substrate 100 loaded into the fourth region 60d is then transported through the first region 60a, the process region 60e, the second region 60b, the third region 60c, the passing region 60f, and the fourth region 60d in that order. That is, the substrate 100 circles along the edge of the levitation unit 10. Here, the substrate 100 makes two revolutions to irradiate the entire substrate 100 with laser light. That is, the substrate 100 is transported so as to circulate twice over the levitation unit 10. In this manner, the laser light is irradiated onto almost the entire surface of the substrate 100.

[0080] The transport method will be described in detail below, following the procedure. As shown in Figure 5, the substrate 100 is carried into the fourth region 60d. The substrate 100 carried into the fourth region 60d is floated by the floating unit 10 and the edge floating units 671, 672, and 676. That is, the edge on the -x side of the substrate 100 is floated by the edge floating units 671 and 672, and the center is floated by the floating unit 10. The edge on the -y side of the substrate 100 is floated by the edge floating unit 676. Then, the holding mechanism 12a of the transport unit 11a holds the substrate 100.

[0081] Next, as shown in Figure 6, the substrate 100a in the fourth region 60d is transported to the first region 60a. In Figure 6, the substrate moved to the first region 60a is shown as substrate 100b. The holding mechanism 12a of the transport unit 11a holds the substrate 100a. Then, the moving mechanism 13a moves the holding mechanism 12a in the +y direction, thereby moving the substrate 100a from the fourth region 60d to the first region 60a (white arrow in Figure 6).

[0082] Here, in the xy-plane view, the holding mechanism 12a moves in the +y-direction, passing between the levitation unit 10 and the end levitation unit 671. Furthermore, in the xy-plane view, the holding mechanism 12a moves in the +y-direction, passing between the levitation unit 10 and the end levitation unit 672. Therefore, the substrate 100b is levitated by the levitation unit 10 and the end levitation units 672 and 673. In other words, the end on the -x side of the substrate 100b is levitated by the end levitation unit 672, and the central portion is levitated by the levitation unit 10. The end on the +y side of the substrate 100b is levitated by the end levitation unit 673.

[0083] Next, as shown in FIG. 7 , the alignment mechanism 69a aligns the position and angle of the substrate 100b transported to the first region 60a. For example, the position and rotation angle of the substrate may be slightly shifted due to the loading, transporting, and rotating operations of the substrate 100. The alignment mechanism 69a corrects the position and rotation angle shift. This allows the irradiation position of the laser light on the substrate 100 to be controlled with high precision.

[0084] For example, the alignment mechanism 69a is movable in the y-direction and rotatable around the z-axis. Furthermore, the alignment mechanism 69a is movable in the z-direction. For example, the alignment mechanism 69a is equipped with an actuator such as a motor. The amount of positional deviation and angle deviation are obtained from an image of the substrate 100b captured by a camera or the like. The alignment mechanism 69a performs alignment based on the amount of deviation.

[0085] An alignment mechanism 69a is disposed directly below the center of the substrate 100b. The alignment mechanism 69a holds the substrate 100b. The alignment mechanism 69a may hold the substrate 100b by suction, similar to the holding mechanism 12. The holding mechanism 12a releases its hold on the substrate 100b. This allows the substrate 100b to be transferred from the holding mechanism 12a to the alignment mechanism 69a.

[0086] Then, the alignment mechanism 69a rotates the substrate 100b around the z-axis (shown by the hollow arrow in FIG. 7). The alignment mechanism 69a rotates the substrate 100b so that the edge of the substrate 100b is parallel to the inclined edge 10e of the levitation unit 10. The rotated substrate is shown as substrate 100c. For example, the alignment mechanism 69a rotates the substrate 100b by a predetermined angle around the z-axis. The edge of the substrate 100c is now parallel to the inclined edge 10e of the levitation unit 10. Then, once the alignment is complete, the holding mechanism 12b of the transport unit 11b holds the substrate 100b, and the alignment mechanism 69a releases its hold. This allows the substrate 100c to be transferred from the alignment mechanism 69a to the holding mechanism 12b of the transport unit 11b.

[0087] Next, as shown in FIG. 8 , the transport unit 11b moves the substrate 100d. As a result, the substrate 100d passes through the process area 60e. Here, in the xy-plane view, the holding mechanism 12b passes between the floating unit 10 and the end floating unit 673 and moves in a direction parallel to the inclined side 10e. As a result, approximately half of the area of ​​the substrate 100d passes through the irradiation area 15a. The laser light is irradiated onto the substrate 100d, which is moving in an inclined direction inclined from the x-direction orthogonal to the irradiation area 15a.

[0088] In the xy plane view, the holding mechanism 12b passes between the levitation unit 10 and the end levitation unit 673 and moves in a direction parallel to the inclined side 10e. Therefore, the substrate 100d is levitated by the levitation unit 10 and the end levitation unit 673. In other words, the end on the +y side of the substrate 100d is levitated by the end levitation unit 673, and the central portion is levitated by the levitation unit 10. A laser irradiation process is carried out while the substrate 100d moves from the first region 60a to the second region 60b.

[0089] Next, as shown in Fig. 9, when the substrate 100e moves to the second region 60b, the alignment mechanism 69b aligns the substrate 100e. Here, the alignment mechanism 69b rotates the substrate 100e (shown by the hollow arrow in Fig. 9). In Fig. 9, the rotated substrate is shown as substrate 100f.

[0090] An alignment mechanism 69b is disposed directly below the center of the substrate 100e. The alignment mechanism 69b holds the substrate 100e. The alignment mechanism 69b may hold the substrate 100e by suction, similar to the holding mechanism 12. Furthermore, the holding mechanism 12b releases its hold on the substrate 100e. The substrate 100e is transferred from the holding mechanism 12b of the transport unit 11b to the alignment mechanism 69b.

[0091] The alignment mechanism 69b rotates the substrate 100e around the z-axis (shown by the hollow arrow in FIG. 9). The alignment mechanism 69a rotates the substrate 100e so that the edge of the substrate 100e is parallel to the inclined edge 10e of the levitation unit 10. After rotation, the edge of the substrate 100f is parallel to the x-direction or y-direction. Then, once alignment is complete, the holding mechanism 12c of the transport unit 11c holds the substrate 100f, and the alignment mechanism 69b releases its hold. This allows the substrate 100f to be transferred from the alignment mechanism 69b to the holding mechanism 12c of the transport unit 11c.

[0092] The substrate 100e is levitated by the levitation unit 10 and the end levitation units 673 and 674. That is, the end on the +y side of the substrate 100e is levitated by the end levitation unit 673. The end on the +x side of the substrate 100e is levitated by the end levitation unit 674, and the center portion is levitated by the levitation unit 10.

[0093] Next, as shown in FIG. 10 , substrate 100f in second region 60b is transported to third region 60c. The substrate moved to third region 60c is shown as substrate 100g. In FIG. 10 , holding mechanism 12c of transport unit 11c holds substrate 100f. Then, movement mechanism 13c moves holding mechanism 12c in the −y direction, thereby moving substrate 100f from second region 60b to third region 60c (white arrow in FIG. 10 ).

[0094] Here, in the xy plane view, the holding mechanism 12c moves in the -y direction, passing between the levitation unit 10 and the end levitation unit 674. Therefore, the substrate 100e is levitated by the levitation unit 10 and the end levitation units 674 and 675. The end on the +x side of the substrate 100e is levitated by the end levitation unit 674, and the central portion is levitated by the levitation unit 10. The end on the -y side of the substrate 100e is levitated by the end levitation unit 675.

[0095] Then, the holding mechanism 12d of the transport unit 11d holds the substrate 100g, and the holding mechanism 12c releases its hold, thereby transferring the substrate 100g from the holding mechanism 12c of the transport unit 11c to the holding mechanism 12d of the transport unit 11d.

[0096] Next, as shown in FIG. 11 , substrate 100g in the third region 60c is transported to the fourth region 60d. The substrate moved to the fourth region 60d is shown as substrate 100h. In FIG. 11 , holding mechanism 12d of transport unit 11d holds substrate 100g. Then, movement mechanism 13d moves holding mechanism 12d in the −x direction, thereby moving substrate 100f from the third region 60c to the fourth region 60d (white arrow in FIG. 11 ).

[0097] Here, in the xy plane view, the holding mechanism 12d moves in the -x direction, passing between the levitation unit 10 and the end levitation unit 675. In the xy plane view, the holding mechanism 12d moves in the -x direction, passing between the levitation unit 10 and the end levitation unit 676. Therefore, the substrate 100h is levitated by the levitation unit 10 and the end levitation unit 676. The end on the -y side of the substrate 100h is levitated by the end levitation unit 676, and the central portion is levitated by the levitation unit 10. The end on the -x side of the substrate 100h is levitated by the end levitation unit 671.

[0098] In this way, the substrate 100 that was in the fourth region 60d moves in the order of the first region 60a, the process region 60e, the second region 60b, the third region 60c, the passing region 60f, and the fourth region 60d. In other words, the substrate 100 moves around along the edge of the levitation unit 10.

[0099] 12, the rotation mechanism 68 rotates the substrate 100h by 180° around the z-axis. That is, the substrate 100h is transferred from the holding mechanism 12d to the rotation mechanism 68. After the rotation mechanism 68 rotates the substrate 100h, the substrate 100h is transferred from the rotation mechanism 68 to the holding mechanism 12d.

[0100] In the same manner as above, the transport units 11a to 11d again move the substrate 100h through the first region 60a, the process region 60e, the second region 60b, the third region 60c, the passing region 60f, and the fourth region 60d in that order. In other words, as shown in Figures 5 to 12, the substrate 100 circles along the edge of the levitation unit 10.

[0101] Here, the rotation mechanism 68 rotates the substrate 100h by 180°. When the substrate 100e passes through the process region 60e for the second time, the remaining half of the region that was not irradiated with laser light during the first pass is irradiated with laser light. In this manner, the substrate 100 circulates twice along the edge of the levitation unit 10. Because the substrate 100 rotates 180° between the first and second laser irradiations, the laser light is irradiated onto almost the entire surface of the substrate 100. Note that the position at which the substrate 100 is rotated is not limited to the first region 60a. For example, the rotation may be performed in the second region 60b, the third region 60c, the fourth region 60d, or the like.

[0102] In this embodiment, too, the moving mechanism 13b transports the holding mechanism 12b in a direction tilted from the x direction perpendicular to the irradiation area 15a. This allows the silicon film crystallization process to be carried out appropriately. For example, it is possible to prevent the occurrence of moire and improve display quality. Of course, the transport direction of the substrate 100 may also be the X direction. In top view, the transport direction of the substrate 100 may be any direction tilted from the Y direction. In other words, the transport direction of the substrate may be parallel to the X direction or tilted from the X direction.

[0103] (Displacement meter of irradiation area) Next, the configuration directly below the irradiation area 15a will be described with reference to Fig. 13 and Fig. 14. Fig. 13 is a plan view schematically showing the irradiation area 15a and its surrounding configuration in the precision levitation area 31. Fig. 13 is a side view schematically showing the irradiation area 15a and its surrounding configuration.

[0104] A displacement meter 129 is provided directly below the irradiation region 15a. The displacement meter 129 is disposed below the substrate 100. The displacement meter 129 is a laser displacement meter that measures the position of the substrate 100 in the Z direction. In other words, the displacement meter 129 can detect the floating height of the substrate 100 in a non-contact manner. For example, the displacement meter 129 has a laser light source that generates detection light L11 toward the substrate 100, and a photodetector that detects the light reflected by the substrate 100. The detection light L11 travels upward and is incident on the substrate 100 from below.

[0105] As shown in Fig. 14, a plurality of precision levitation units 111 are provided on a base 120. As shown in Fig. 13, the precision levitation units 111 are rectangular in shape. The precision levitation units 111 are arranged side by side in the X and Y directions.

[0106] Irradiation area 15a is a linear area with the Y direction as its longitudinal direction. A gap 132 is provided between two precision levitation units 111 lined up in the X direction. This gap 132 forms a groove provided along the Y direction. Irradiation area 15a is located in gap 132. In other words, the laser light is irradiated onto substrate 100 directly above gap 132.

[0107] Furthermore, a space 128 is provided in the base 120 and the surface plate 125 directly below the gap 132. The space 128 is a space for arranging a displacement meter 129. For example, a recess or a through-hole formed in the base 120 serves as the space 128. In FIG. 14 , the space 128 penetrates the surface plate 125. Therefore, the upper side of the levitation unit cell 131 is connected to the lower side of the surface plate 125 via the gap 132 and the space 128. Note that if the space 128 penetrates to the lower side of the surface plate 125, a signal line of the displacement meter 129 may be taken out from the lower side of the space 128. The displacement meter 129 is arranged directly below the gap 132.

[0108] The displacement meter 129 is an optical displacement meter that emits detection light L11 upward. The detection light L11 passes through the space 128 and the gap 132 and is incident on the substrate 100. Similarly, reflected light from the substrate 100 passes through the gap 132 and the space 128 and is incident on the displacement meter 129.

[0109] Note that the space 128 provided in the base 120 may be a space through which the detection light L11 passes. In other words, the displacement meter 129 does not have to be arranged inside the base 120. The displacement meter 129 may be arranged below the base 120. In this case, the height of the displacement meter 129 may be the same as the height of the surface plate 125, or may be below the surface plate 125. In other words, a part of the displacement meter 129 may be arranged inside the surface plate 125, or the displacement meter 129 may be arranged below the surface plate 125.

[0110] In this way, the floating height of the substrate 100 in the irradiation area 15a can be measured. Therefore, the substrate 100 can be transported at an appropriate floating height. In other words, the gas ejection and gas suction can be controlled to achieve an optimal floating height. The laser light irradiation process can be appropriately controlled. In other words, the floating height of the substrate 100 at or near the laser light irradiation position can be appropriately managed, so that the floating height of the substrate 100 at the laser light irradiation position can be kept constant.

[0111] The energy density of the laser light on the substrate 100 can be kept constant, enabling stable laser irradiation. Alternatively, the irradiation intensity of the laser light may be controlled according to the flying height. The process conditions can be controlled according to the measured flying height. As a result, a more uniform polysilicon film can be formed.

[0112] Furthermore, a plurality of displacement meters 129 are provided along the line direction. For example, in FIG. 13, four displacement meters 129 are provided. The four displacement meters 129 are arranged at predetermined intervals. This makes it possible to detect the distribution of the flying height in the line direction. Therefore, it is possible to make the flying height uniform in the line direction.

[0113] For example, in the precision levitation region 31, four precision levitation units 111 are lined up in the Y direction. A displacement meter 129 is disposed near the center of each precision levitation unit 111 in the Y direction. In other words, a precision levitation unit 111 is disposed adjacent to each of the four displacement meters 129 in the X direction. Assume that the gas ejection and gas supply of each precision levitation unit 111 can be controlled independently. The gas ejection and gas supply of each precision levitation unit 111 are controlled based on the levitation height detected by each displacement meter 129. This makes it possible to make the levitation height uniform in the line direction. This enables a more stable process and allows a uniform polysilicon film to be formed.

[0114] The transfer method according to this embodiment transfers a substrate using the transfer device 600. The transfer method includes a step in which the holding mechanism 12 holds the substrate 100, and a step in which the moving mechanism 13 moves the holding mechanism 12 to transfer the substrate 100 on the levitation unit 10. Then, the displacement meter 129 measures the levitation height of the substrate 100 during transfer.

[0115] (Cooling Mechanism of Pedestal 120) Next, the cooling mechanism provided in the pedestal 120 will be described with reference to Fig. 15. Fig. 15 is a side cross-sectional view showing the gap 132 located directly below the irradiation area 15a and the configuration of its surroundings. The pedestal 120 is provided with a cooling path through which cooling water flows. Therefore, since the cooling water flows inside the pedestal 120, it is possible to suppress the temperature rise due to laser irradiation.

[0116] An example of the configuration of the base 120 will be described below. The base 120 is divided into two cooling blocks 1201 and 1202. In other words, a plurality of cooling blocks function as the base 120. The cooling blocks 1201 and 1202 are formed of a metal material such as an aluminum alloy.

[0117] The cooling block 1202 is disposed directly below the precision levitation unit 111, which is disposed on the −X side of the gap 132. In other words, the cooling block 1202 is a flat block disposed between the precision levitation unit 111 and the surface plate 125. The cooling block 1202 is rectangular in the XZ plane view. A cooling path 1213 is formed in the cooling block 1202. Here, the cooling path 1213 is provided along the Y direction, but it may also meander within the cooling block 1202. Both ends of the cooling path 1213 reach the bottom or side surface of the cooling block 1202. Cooling water is supplied from one end of the cooling path 1213 and discharged from the other end. The cooling path 1213 functions as a cooling pipe through which cooling water flows.

[0118] Cooling block 1201 is disposed directly below precision levitation unit 111, which is disposed on the +X side of gap 132. Cooling block 1201 is formed in an L-shape when viewed in the XZ plane. Therefore, cooling block 1201 includes a flat, plate-shaped base portion 1201a and a cooling portion 1201b that protrudes upward from base portion 1201a.

[0119] Cooling unit 1201b is disposed within gap 132. In other words, the upper surface of cooling unit 1201b is at approximately the same height as the upper surface (levitation surface) of precision levitation unit 111. Therefore, the height of cooling block 1202 in gap 132 can be aligned with the height of the levitation surface of precision levitation unit 111. This prevents turbulence in the airflow of the inert gas from seal box 20 and the levitation gas from precision levitation unit 111, allowing for accurate levitation. In FIG. 15, the upper surface of cooling unit 1201b is lower than the upper surface of precision levitation unit 111, but they may also be at the same height.

[0120] The cooling section 1201b is provided with a cooling path 1211 extending in the line direction. The cooling path 1211 is disposed in the gap 132. Both ends of the cooling path 1211 are connected to the side or bottom surface of the cooling block 1201. The base section 1201a is provided with a cooling path 1212. The cooling path 1212 may meander within the base section 1201a. Both ends of the cooling path 1212 are connected to the side or bottom surface of the cooling block 1201. The cooling paths 1211 and 1212 may be connected to each other. For example, the cooling path 1211 may be bent downward. Cooling water is supplied from one end of the cooling path 1211 and the cooling path 1212 and discharged from the other end. The cooling paths 1211 and 1212 function as cooling pipes through which cooling water flows. The cooling block 1201 can be cooled.

[0121] A cooling path 1211 is provided in the gap 132 directly below the irradiation area 15a of the laser beam 15. The cooling path 1211 is disposed at the same height as the precision levitation unit 111. This effectively suppresses temperature rise due to irradiation with the laser beam 15. For example, if the temperature around the precision levitation unit 111 rises due to laser beam irradiation, the temperature of the precision levitation unit 111 also increases. This could result in localized thermal expansion of the precision levitation unit 111, resulting in a decrease in levitation accuracy. The base 120 has the cooling path 1211 disposed in the gap 132. This suppresses temperature rise in the precision levitation unit 111, thereby suppressing deterioration of levitation accuracy. This allows the laser irradiation process to be carried out stably.

[0122] (Cooling Mechanism and Displacement Gauge) The transport device 600 may be equipped with either the cooling mechanism or the displacement gauge 129, or both. The configuration of the base 120 of the transport device 600 having both the displacement gauge and the cooling mechanism will be described below with reference to FIGS. 16 to 18. FIG. 16 is a perspective view showing the base 120 to which the levitation unit 10 is fixed. FIG. 17 is a top view of the levitation unit 10. FIG. 18 is a perspective view showing the configuration of the base 120 only. Note that descriptions of content common to FIG. 15 will be omitted where appropriate.

[0123] As shown in Fig. 16, a surface plate 125 is fixed on a base 126. Furthermore, a pedestal 120 is fixed on the surface plate 125. The pedestal 120 is divided into a cooling block 1201 and a cooling block 1202. Furthermore, precision levitation units 111 are fixed on the cooling blocks 1201 and 1202. Fig. 16 shows an example in which eight precision levitation units 111 are provided, but the number of precision levitation units 111 is not particularly limited.

[0124] As shown in Figure 16, gaps 132 are provided between adjacent precision levitation units 111 (levitation unit cells 131). Gap 132 is provided along the Y direction. Cooling block 1202 is provided below precision levitation unit 111 on the -X side of gap 132. Cooling block 1202 is provided with cooling path 1213. Cooling block 1201 is provided below precision levitation unit 111 on the +X side of gap 132. Cooling block 1201 is provided with cooling paths 1211 and 1212.

[0125] Furthermore, as shown in FIGS. 16 to 18 , the cooling unit 1201b is provided with a window 128a. Detection light from the displacement meter 129 (not shown in FIGS. 16 to 18 ) passes through the window 128a and is incident on the substrate 100 (not shown in FIGS. 16 to 18 ). Reflected light from the substrate 100 similarly passes through the window 128a and is incident on the displacement meter 129. A space 128 is provided below the window 128a. As described above, the space 128 is a space through which the detection light L11 from the displacement meter 129 passes. As shown in FIG. 17 , the space 128 is larger than the window 128a in a top view. Furthermore, in the cooling unit 1201b, cooling paths 1211 are provided on both sides of the space 128 in the Y direction.

[0126] With this configuration, the displacement meter 129 can measure the floating height of the substrate 100 in the irradiation area 15 a. Furthermore, it is possible to suppress a temperature rise in the irradiation area 15 a due to laser light irradiation. Therefore, it is possible to float the substrate with higher accuracy and to execute a stable laser irradiation process.

[0127] (Exhaust Mechanism) Furthermore, the transfer device 600 may be equipped with an exhaust mechanism that exhausts gas inside the chamber 500 to the outside of the chamber 500. The configuration of the exhaust mechanism will be described with reference to Figures 19 to 21. Figure 19 is a top view that schematically shows the configuration of the transfer unit and the exhaust mechanism around it, and Figure 20 is a side view. Figure 21 is a top view that schematically shows the tray 183.

[0128] In addition, in Figure 19, two transport units 11b1 and 11b2 are provided between the levitation unit 10 and the end levitation unit 673. The transport units 11b1 and 11b2 correspond to the transport unit 11b shown in Figure 4 and other figures. Therefore, when the transport units 11b1 and 11b2 transport the substrate 100, the substrate 100 is irradiated with laser light 15. Also, in Figure 19, the transport direction of the transport units 11b1 and 11b2 is parallel to the X direction. Therefore, the end side of the levitation unit 10 is parallel to the X direction. In Figure 20, only the transport unit 11b1 and its exhaust mechanism are shown.

[0129] The transport units 11b1 and 11b2 are arranged offset in the Y direction. The transport units 11b1 and 11b2 move back and forth in the X direction. The transport units 11b1 and 11b2 move back and forth independently. By providing the transport units 11b1 and 11b2, two substrates can be transported continuously in the X direction. For example, to irradiate one substrate 100 with laser light, the transport unit 11b1 transports the first substrate 100 in the X direction, and immediately thereafter the transport unit 11b2 transports the second substrate 100 in the X direction. This allows the two substrates 100 to be irradiated with laser light continuously.

[0130] Furthermore, an exhaust mechanism 170 is provided below the transfer units 11b1 and 11b2. The exhaust mechanism 170 has exhaust ports 171 and exhaust pipes 172. The exhaust ports 171 are provided directly below the transfer units 11b1 and 11b2. The exhaust ports 171 are openings that face upward. Here, multiple exhaust ports 171 are arranged side by side in the X direction. The exhaust ports 171 are connected to the exhaust pipes 172. Therefore, gas within the chamber 500 flows from the exhaust ports 171 into the exhaust pipes 172. Note that, although four exhaust ports 171 are provided in the figure, the number of exhaust ports 171 is not particularly limited.

[0131] The chamber 500 houses the levitation unit 10, the transport units 11b1 and 11b2, the exhaust mechanism 170, etc. In other words, the levitation unit 10, the transport units 11b1 and 11b2, the exhaust mechanism 170, etc. are arranged inside the chamber 500.

[0132] The exhaust pipe 172 is connected to an exhaust unit 510 located outside the chamber 500. The exhaust unit 510 creates a negative pressure in the exhaust pipe 172. This causes gas inside the chamber 500 to pass from the exhaust port 171 through the exhaust pipe 172 and be exhausted to the outside of the chamber 500. The exhaust unit 510 may include an exhaust pump, a filter, and the like.

[0133] This allows gas ejected from the levitation unit 10, the end levitation unit 673, etc. to be discharged outside the chamber 500. This stabilizes the airflow inside the chamber 500. This allows the substrate 100 to be levitated with high precision, and the substrate 100 can be irradiated with laser light in a stable manner.

[0134] An example of the specific configuration of the transport unit 11b1 and its exhaust mechanism 170 will be described with reference to Figures 20 and 21. In the following description, transport unit 11b1 will be described as a representative of the multiple transport units 11. Of course, the other transport units 11a, 11b2, 11c, and 11d may have the same configuration as transport unit 11b1.

[0135] 20, the transport unit 11b1 includes a holding mechanism 12b1 and a moving mechanism 13b1. The holding mechanism 12b1 corresponds to the holding mechanism 12 or the holding mechanism 12b, and holds the edge of the substrate 100.

[0136] The moving mechanism 13b1 corresponds to the moving mechanism 13 or the moving mechanism 13b, and moves the holding mechanism 12b1 in the X direction, thereby moving the substrate 100 in the X direction. The moving mechanism 13b includes a stage 181, a cable bear 182, a tray 183, and a fixed frame 184.

[0137] The holding mechanism 12b1 is fixed onto a stage 181. The stage 181 supports the holding mechanism 12b1. As will be described later, the stage 181 may be an elevation stage that raises and lowers the holding mechanism 12b1. The stage 181 is connected to a cable bear 182. The cable bear 182 is provided along the X direction. Therefore, the holding mechanism 12b1 and the stage 181 move in the X direction.

[0138] The cable bear 182 is disposed on the tray 183. That is, the tray 183 supports the cable bear 182. As shown in FIG. 21 , the tray 183 has a plurality of through holes 183a. The through holes 183a penetrate the tray 183 in the Z direction. Furthermore, the tray 183 is fixed to a frame-shaped fixed frame 184. The fixed frame 184 supports the periphery of the tray 183. The tray 183, fixed frame 184, cable bear 182, and stage 181 are housed in a chamber 500.

[0139] An exhaust port 171 is disposed directly below a through hole 183a provided in the tray 183. An exhaust pipe 172 and an exhaust port 171 are provided below the tray 183. The exhaust port 171 is disposed directly below the tray 183. Furthermore, the exhaust pipe 172 is disposed along the X direction and is disposed directly below the tray 183.

[0140] In this way, by providing the exhaust port 171 below the moving mechanism 13b1, exhaust can be performed without affecting the gas flow on the upper surface of the levitation unit 10. In other words, gas ejected from the levitation unit 10, etc. can be appropriately exhausted. The substrate 100 can be levitated with high precision, which stabilizes the airflow within the chamber 500, and the substrate 100 can be irradiated with laser light in a stable manner. Furthermore, even if particles are generated from the sliding portion of the cable bear 182, they can be exhausted to the outside of the chamber 500 via the exhaust pipe 172. It is preferable to position the exhaust pipe 172 directly below the moving mechanism 13b1. This allows for efficient space utilization.

[0141] In the above description, the configuration of the exhaust mechanism 170 provided directly below the transport unit 11b1 has been described, but the other transport units 11a, 11b2, 11c, 11d, etc. may also be provided with similar exhaust mechanisms 170. Of course, it is not necessary to provide an exhaust mechanism 170 for one or more transport units 11.

[0142] In order to irradiate the laser beam, it is preferable to provide an exhaust mechanism 170 for the transport unit 11b that transports the substrate 100. This makes it possible to stabilize the airflow around the irradiation region 15a, thereby enabling the laser irradiation process to be carried out stably.

[0143] The transfer method according to this embodiment transfers a substrate using the transfer device 600. The transfer method includes a step in which the holding mechanism 12 holds the substrate 100, and a step in which the moving mechanism 13 moves the holding mechanism 12 to transfer the substrate 100 on the levitation unit 10. Furthermore, since cooling water flows through the pedestal 120 during laser irradiation, it is possible to suppress a rise in temperature of the levitation unit 10. This allows for stable transfer. Furthermore, since gas is exhausted from the exhaust mechanism 170 during laser irradiation, stable transfer is also possible.

[0144] (Lifting and Lowering Operation of Holding Mechanism 12) Next, the lifting and lowering operation of the holding mechanism 12 will be described with reference to Figs. 22 and 23. Figs. 22 and 23 are side views schematically showing the transport unit 11 and its surrounding configuration. Fig. 22 shows the state in which the holding mechanism 12 is in a raised position (raised position), and Fig. 23 shows the state in which the holding mechanism 12 is in a lowered position (also referred to as a lowered position). Figs. 22 and 23 also show the transport unit 11 whose transport direction is the y direction.

[0145] The holding mechanism 12 is supported by a stage 181. The stage 181 is an elevation stage that moves the holding mechanism 12 in the Z direction. For example, the stage 181 has an actuator such as a motor, a guide mechanism, and the like. By driving the actuator of the stage 181, the height of the upper surface (holding surface) of the holding mechanism 12 can be changed.

[0146] As shown in Fig. 4, a plurality of transport units 11 are provided around the floating unit 10. The plurality of transport units 11 transport the substrate 100 in a circular motion. Therefore, the substrate 100 is transferred between transport units 11b and 11d, which move along the X direction, and transport units 11a and 11c, which move along the Y direction. For example, in the state shown in Fig. 6, the substrate 100 is transferred from transport unit 11a to transport unit 11b. In this case, transport unit 11a is the transfer source, and transport unit 11b is the transfer destination.

[0147] 22, the upper surface (holding surface) of the holding mechanism 12 of the transfer destination transport unit 11 is higher than the upper surface (floating surface) of the levitation unit 10. In other words, the stage 181 raises the transport unit 11 to the raised position. Then, after the stage 181 moves the holding mechanism 12 to the height of the raised position, the stage 181 vacuum-sucks the substrate 100.

[0148] 23, the upper surface (holding surface) of the holding mechanism 12 of the transfer source transport unit 11 is lower than the upper surface (floating surface) of the levitation unit 10. In other words, the stage 181 lowers the transport unit 11 to the lowered position. After the holding mechanism 12 releases the vacuum suction, the stage 181 moves the transport unit to the height of the lowered position.

[0149] In this way, when the transport unit 11 is not vacuum-sucking the substrate 100, the holding mechanism 12 moves below the upper surface of the levitation unit 10. Therefore, the substrate 100 can be properly handed over between the two transport units 11.

[0150] Next, the configuration of the stage 181 provided in the holding mechanism 12 will be described with reference to Fig. 24. Fig. 24 is a side view schematically showing the configuration of the holding mechanism 12 and its stage 181. Note that Fig. 24 shows the holding mechanism 12 of the transport unit 11 whose transport direction is the y direction.

[0151] The stage 181 has a lower stage 181a, a Z-axis mechanism 181b, and an upper stage 181c. From the bottom, they are arranged in the order of lower stage 181a, Z-axis mechanism 181b, and upper stage 181c. Therefore, the Z-axis mechanism 181b is arranged between the upper stage 181c and lower stage 181a. The upper stage 181c supports the holding mechanism 12. The lower stage 181a is supported by the moving mechanism 13. For example, the lower stage 181a is attached to a slider of a linear motor.

[0152] The Z-axis mechanism 181b is an elevation mechanism having a guide extending in the Z direction and an actuator. The Z-axis mechanism 181b is a wedge-shaped elevation mechanism having a linear guideway. The Z-axis mechanism 181b supports the upper stage 181c so that it can be raised and lowered. Thus, the Z-axis mechanism 181b can move the upper stage 181c up and down. The holding mechanism 12 may be divided into multiple parts to hold the substrate 100 by suction. The transport method according to this embodiment transports a substrate using the above-described transport device. The transport method includes a step in which the holding mechanism holds the substrate, and a step in which the moving mechanism moves the holding mechanism to transport the substrate on the levitation unit. Then, a displacement meter is used to measure the floating height of the substrate.

[0153] (Organic EL Display) The semiconductor device having the polysilicon film is suitable for a TFT (Thin Film Transistor) array substrate for an organic EL (ElectroLuminescence) display. That is, the polysilicon film is used as a semiconductor layer having a source region, a channel region, and a drain region of the TFT.

[0154] The following describes a configuration in which the semiconductor device according to this embodiment is applied to an organic EL display. Fig. 25 is a cross-sectional view showing a simplified pixel circuit of an organic EL display. The organic EL display 300 shown in Fig. 25 is an active matrix display device in which a TFT is arranged in each pixel PX.

[0155] The organic EL display 300 includes a substrate 310, a TFT layer 311, an organic layer 312, a color filter layer 313, and a sealing substrate 314. Fig. 25 shows a top-emission organic EL display in which the sealing substrate 314 side is the viewing side. Note that the following description shows one example of the configuration of an organic EL display, and the present embodiment is not limited to the configuration described below. For example, the semiconductor device according to this embodiment may be used in a bottom-emission organic EL display.

[0156] The substrate 310 is a glass substrate or a metal substrate. A TFT layer 311 is provided on the substrate 310. The TFT layer 311 has a TFT 311a arranged in each pixel PX. The TFT layer 311 further has wiring (not shown) connected to the TFT 311a. The TFT 311a and the wiring constitute a pixel circuit.

[0157] An organic layer 312 is provided on the TFT layer 311. The organic layer 312 has an organic EL element 312a arranged for each pixel PX. Furthermore, the organic layer 312 is provided with partition walls 312b for separating the organic EL elements 312a between the pixels PX.

[0158] A color filter layer 313 is provided on the organic layer 312. The color filter layer 313 is provided with a color filter 313a for color display. That is, a resin layer colored in R (red), G (green), or B (blue) is provided in each pixel PX as the color filter 313a.

[0159] A sealing substrate 314 is provided on the color filter layer 313. The sealing substrate 314 is a transparent substrate such as a glass substrate, and is provided to prevent the organic EL light-emitting elements of the organic layer 312 from deteriorating.

[0160] The current flowing through the organic EL element 312a of the organic layer 312 varies depending on the display signal supplied to the pixel circuit. Therefore, by supplying a display signal corresponding to the display image to each pixel PX, the amount of light emitted by each pixel PX can be controlled. This allows the desired image to be displayed.

[0161] In an active matrix display device such as an organic EL display, one pixel PX is provided with one or more TFTs (e.g., switching TFTs or driving TFTs). The TFTs of each pixel PX are provided with a semiconductor layer having a source region, a channel region, and a drain region. The polysilicon film according to this embodiment is suitable for the semiconductor layer of the TFT. In other words, by using the polysilicon film manufactured by the above manufacturing method as the semiconductor layer of a TFT array substrate, it is possible to suppress in-plane variations in TFT characteristics. Therefore, display devices with excellent display characteristics can be manufactured with high productivity.

[0162] (Method for Manufacturing Semiconductor Device) A method for manufacturing a semiconductor device using a laser irradiation apparatus according to this embodiment is suitable for manufacturing a TFT array substrate. A method for manufacturing a semiconductor device having TFTs will be described with reference to FIGS. 26 and 27. FIGS. 26 and 27 are cross-sectional views showing the manufacturing process of a semiconductor device. In the following description, a method for manufacturing a semiconductor device having inverted staggered TFTs will be described. FIGS. 26 and 27 show the step of forming a polysilicon film in the semiconductor manufacturing method. Note that, as known techniques can be used for the other manufacturing steps, their description will be omitted.

[0163] 26 , a gate electrode 402 is formed on a glass substrate 401. A gate insulating film 403 is formed on the gate electrode 402. An amorphous silicon film 404 is formed on the gate insulating film 403. The amorphous silicon film 404 is disposed so as to overlap the gate electrode 402 with the gate insulating film 403 interposed therebetween. For example, the gate insulating film 403 and the amorphous silicon film 404 are successively formed by a CVD (Chemical Vapor Deposition) method.

[0164] Then, the glass substrate 401 on which the amorphous silicon film 404 has been formed is transported to the transport device 600. By irradiating the amorphous silicon film 404 with laser light L1, a polysilicon film 405 is formed, as shown in FIG. 27. That is, the amorphous silicon film 404 is crystallized by the laser irradiation device 1 shown in FIG. 1 etc. As a result, a polysilicon film 405 made of crystallized silicon is formed on the gate insulating film 403. The polysilicon film 405 corresponds to the polysilicon film described above. While the transport device 600 is transporting the glass substrate 401, the glass substrate 401 is irradiated with laser light L1. As a result, the amorphous silicon film 404 is annealed and converted into the polysilicon film 405.

[0165] Furthermore, in the above description, the laser annealing apparatus according to the present embodiment has been described as irradiating an amorphous silicon film with laser light to form a polysilicon film, but it may also be irradiating an amorphous silicon film with laser light to form a microcrystalline silicon film. Furthermore, the laser light used for annealing is not limited to an Nd:YAG laser. The method according to the present embodiment can also be applied to a laser annealing apparatus that crystallizes thin films other than silicon films. That is, the method according to the present embodiment can be applied to any laser annealing apparatus that irradiates an amorphous film with laser light to form a crystallized film. The laser annealing apparatus according to the present embodiment can appropriately modify a substrate with a crystallized film.

[0166] The method for manufacturing a semiconductor device according to the present embodiment may include the following steps (s1) to (s2): (s1) forming an amorphous film on a substrate, and (s2) irradiating a line-shaped laser beam onto the substrate while transporting the substrate using a transport device, thereby annealing the amorphous film to crystallize the amorphous film and form a crystallized film.

[0167] In step (s2), the above-described transfer device 600 transfers the substrate 100. Furthermore, the transfer device 600 does not necessarily have to have all of the above-described configurations.

[0168] The present invention is not limited to the above-described embodiment, and can be modified as appropriate within the scope of the invention.

[0169] REFERENCE SIGNS LIST 1 Laser irradiation device 10 Levitation unit 11 Transport unit 12 Holding mechanism 13 Moving mechanism 14 Laser irradiation section 15 Laser light 15a Irradiation area 31 Precision levitation area 32 Semi-precise levitation area 33 Rough levitation area 60a First area 60b Second area 60c Third area 60d Fourth area 60e Process area 60f Passage area 670 to 676 End levitation unit 68 Rotation mechanism 69a, 69b Alignment mechanism 100 Substrate 111 Precision levitation unit 112 Semi-precise levitation unit 113 Rough levitation unit 120 Base 125 Surface plate 126 Stand 128 Space 129 Displacement meter 131 Levitation unit cell 132 Gap 300 Organic EL display 310 Substrate 311 TFT layer 311a TFT 312 Organic layer 312a Organic EL light emitting element 312b Partition wall 313 Color filter layer 313a Color filter (CF) 314 Sealing substrate 401 Glass substrate 402 Gate electrode 403 Gate insulating film 404 Amorphous silicon film 405 Polysilicon film 500 Chamber 510 Exhaust unit 671 to 676 End floating unit PX Pixel

Claims

1. A transport device that transports a substrate in order to irradiate the substrate with a line-shaped laser beam, the transport device comprising: a levitation unit having a plurality of levitation unit cells arranged with gaps between them, which levitates the substrate on its upper surface; a holding mechanism that holds the substrate on the levitation unit; a moving mechanism that moves the holding mechanism in a transport direction that is inclined from the line direction of the laser beam in a top view so as to change the irradiation position of the laser beam on the substrate; a base that supports the levitation unit cell; and a displacement meter that detects the height of the substrate, which is provided in a gap directly below the irradiation area of ​​the laser beam.

2. The transport device according to claim 1, wherein the transport device has a plurality of the displacement meters, and the plurality of the displacement meters are arranged in a line along the line direction of the laser light.

3. A conveying device as described in claim 1, wherein the base has a cooling section arranged in the gap in the irradiation area of ​​the laser light, and the cooling section has a cooling path provided along the line direction of the laser light.

4. A conveying device according to claim 3, wherein the base is provided with a space for passing the detection light of the displacement meter or a space for arranging the displacement meter.

5. A transport device that transports a substrate to irradiate the substrate with a line-shaped laser beam, the transport device comprising: a levitation unit having a plurality of levitation unit cells arranged with gaps between them, which levitates the substrate on its upper surface; a holding mechanism that holds the substrate on the levitation unit; a moving mechanism that moves the holding mechanism in a transport direction that is inclined from the line direction of the laser beam in a top view so as to change the irradiation position of the laser beam on the substrate; a base that supports the levitation unit cell; and a cooling unit that is provided on the base and arranged in the gap in the irradiation area of ​​the laser beam, the cooling unit having a cooling path arranged along the line direction of the laser beam.

6. A transport device according to claim 1 or 5, comprising: a tray having a through hole and supporting the movement mechanism; a chamber accommodating the levitation unit cell, the holding mechanism, the movement mechanism, and the pedestal; and an exhaust pipe having an exhaust port located below the tray and connected to the outside of the chamber.

7. A transport device for transporting a substrate to irradiate the substrate with a line-shaped laser beam, the transport device comprising: a levitation unit having a plurality of levitation unit cells arranged with gaps between them, and levitating the substrate on its upper surface; a holding mechanism for holding the substrate on the levitation unit; a moving mechanism for moving the holding mechanism in a transport direction tilted from the line direction of the laser beam in a top view so as to change the irradiation position of the laser beam on the substrate; a tray having a through hole and supporting the moving mechanism; a chamber accommodating the levitation unit, the holding mechanism, the moving mechanism, and the tray; and an exhaust pipe having an exhaust port arranged below the tray and connected to the outside of the chamber.

8. A transport method for transporting a substrate using a transport device in order to irradiate the substrate with a line-shaped laser beam, the transport device comprising: a levitation unit having a plurality of levitation unit cells arranged with a gap therebetween, which levitates the substrate on its upper surface; a base supporting the levitation unit cells; and a displacement meter for detecting the height of the substrate, which is provided in a gap directly below the irradiation area of ​​the laser beam; the transport method comprising: (A1) a step in which a holding mechanism holds the substrate; (A2) a step in which a moving mechanism moves the holding mechanism to transport the substrate on the levitation unit; and (A3) a step in which the displacement meter measures the levitation height of the substrate during transportation.

9. The transport method according to claim 8, wherein the transport device has a plurality of the displacement gauges, and the plurality of the displacement gauges are arranged in a line along the line direction of the laser light.

10. A conveying method as described in claim 8, wherein the base has a cooling section arranged in the gap in the irradiation area of ​​the laser light, and the cooling section has a cooling path provided along the line direction of the laser light.

11. A transport method according to claim 10, wherein the base is provided with a space for passing the detection light of the displacement meter or a space for arranging the displacement meter.

12. A transport method for transporting a substrate using a transport device in order to irradiate the substrate with a line-shaped laser beam, the transport device comprising: a levitation unit having a plurality of levitation unit cells arranged with a gap therebetween, and levitating the substrate on its upper surface; a base supporting the levitation unit cells; and a cooling section provided on the base and arranged in the gap in the irradiation area of ​​the laser beam, the cooling section having a cooling path arranged along the line direction of the laser beam, the transport method comprising: (B1) a step in which a holding mechanism holds the substrate; and (B2) a step in which a moving mechanism moves the holding mechanism to transport the substrate on the levitation unit.

13. A transfer method according to claim 8 or 12, wherein the transfer device comprises: a tray having a through hole and supporting the movement mechanism; a chamber accommodating the levitation unit cell, the holding mechanism, the movement mechanism, and the pedestal; and an exhaust pipe having an exhaust port located below the tray and connected to the outside of the chamber.

14. A transport method for transporting a substrate using a transport device in order to irradiate the substrate with a line-shaped laser beam, the transport device comprising: a levitation unit having a plurality of levitation unit cells arranged with gaps between them, and levitating the substrate on its upper surface; a holding mechanism for holding the substrate on the levitation unit; a moving mechanism for moving the holding mechanism in a transport direction inclined from the line direction of the laser beam in a top view so as to change the irradiation position of the laser beam on the substrate; a tray having a through hole and supporting the moving mechanism; a chamber for accommodating the levitation unit, the holding mechanism, the moving mechanism, and the tray; and an exhaust pipe having an exhaust port arranged below the tray and connected to the outside of the chamber, the transport method comprising: (C1) a step in which the holding mechanism holds the substrate; and (C2) a step in which the moving mechanism moves the holding mechanism to transport the substrate on the levitation unit.

15. A method for manufacturing a semiconductor device, comprising: (sa1) the step of forming an amorphous film on a substrate; and (sa2) the step of annealing the amorphous film by irradiating a line-shaped laser beam onto the substrate while transporting the substrate using a transport device, thereby crystallizing the amorphous film and forming a crystallized film, wherein the transport device comprises: a levitation unit having a plurality of levitation unit cells arranged with a gap between them, which levitates the substrate on its upper surface; a holding mechanism for holding the substrate above the levitation unit; a moving mechanism for moving the holding mechanism in a transport direction inclined from the line direction of the laser beam, as viewed from above, so as to change the irradiation position of the laser beam on the substrate; a base for supporting the levitation unit cell; and a displacement meter for detecting the height of the substrate, which is provided in a gap directly below the irradiation area of ​​the laser beam.

16. The method for manufacturing a semiconductor device according to claim 15, wherein the transport device has a plurality of the displacement gauges, and the plurality of the displacement gauges are arranged side by side along the line direction of the laser light.

17. A method for manufacturing a semiconductor device as described in claim 15, wherein the base has a cooling section arranged in the gap in the irradiation area of ​​the laser light, and the cooling section has a cooling path provided along the line direction of the laser light.

18. The method for manufacturing a semiconductor device according to claim 16, wherein the base is provided with a space for passing the detection light of the displacement meter or a space for arranging the displacement meter.

19. A method for manufacturing a semiconductor device, comprising: (sb1) forming an amorphous film on a substrate; and (sb2) annealing the amorphous film to crystallize it and form a crystallized film by irradiating the substrate with a line-shaped laser beam while transporting the substrate using a transport device, wherein the transport device comprises: a transport device that transports the substrate to irradiate the substrate with the line-shaped laser beam, the transport device comprising: a levitation unit that levitates the substrate on its upper surface, the levitation unit having a plurality of levitation unit cells arranged with a gap between them; a holding mechanism that holds the substrate on the levitation unit; a moving mechanism that moves the holding mechanism in a transport direction that is inclined from the line direction of the laser beam in a top view so as to change the irradiation position of the laser beam on the substrate; a pedestal that supports the levitation unit cell; and a cooling unit that is provided on the pedestal and arranged in the gap in the irradiation area of ​​the laser beam, the cooling unit having a cooling path arranged along the line direction of the laser beam.

20. A method for manufacturing a semiconductor device as described in claim 15 or 19, comprising: a tray having a through hole and supporting the movement mechanism; a chamber accommodating the levitation unit cell, the holding mechanism, the movement mechanism, and the pedestal; and an exhaust pipe having an exhaust port located below the tray and connected to the outside of the chamber.

21. A method for manufacturing a semiconductor device, comprising: (sc1) forming an amorphous film on a substrate; and (sc2) annealing the amorphous film by irradiating a line-shaped laser beam onto the substrate while transporting the substrate using a transport device, thereby crystallizing the amorphous film and forming a crystallized film, wherein the transport device comprises: a levitation unit having a plurality of levitation unit cells arranged with gaps between them, which levitates the substrate on its upper surface; a holding mechanism for holding the substrate on the levitation unit; a moving mechanism for moving the holding mechanism in a transport direction inclined from the line direction of the laser beam, as viewed from above, so as to change the irradiation position of the laser beam on the substrate; a tray having a through hole and supporting the moving mechanism; a chamber accommodating the levitation unit, the holding mechanism, the moving mechanism, and the tray; and an exhaust pipe having an exhaust port arranged below the tray and connected to the outside of the chamber.