Substrate processing system, and conveyance method

Abstract

This substrate processing system includes a processing module, a vacuum conveyance module that is connected to the processing module and has a conveyance robot conveying a ring, a temperature adjustment unit that can adjust the temperature of the ring, and a control unit. The control unit performs, in order, a step for using the temperature adjustment unit to adjust the temperature of the ring before the ring is conveyed into the processing module, and a step for using the conveyance robot to convey the ring, the temperature of which has been adjusted by the temperature adjustment unit, and place the same on a substrate support unit.

Description

Substrate processing system and transport method

[0001] The present disclosure relates to a substrate processing system and a transfer method.

[0002] Patent Document 1 discloses a substrate processing system that performs substrate processing (plasma processing) using a focus ring disposed around a mounting table (substrate support) on which a substrate is placed. In this substrate processing system, focus ring replacement involves removing the focus ring from a processing chamber using a transfer device, cleaning the surface of the mounting table on which the focus ring is placed, and then transferring the focus ring back into the processing chamber using the transfer device.

[0003] JP 2018-010992 A

[0004] The present disclosure provides techniques that can improve productivity in substrate processing.

[0005] According to one aspect of the present disclosure, there is provided a substrate processing system including: a processing module having a processing chamber; a substrate support portion including a substrate support surface within the processing chamber and a ring support surface surrounding the substrate support surface and supporting a ring; a vacuum transfer module connected to the processing module and having a transfer robot for transporting the ring; a temperature adjustment portion capable of adjusting the temperature of the ring; and a control portion, wherein the control portion performs, in this order, a step of adjusting the temperature of the ring using the temperature adjustment portion before transporting the ring into the processing module; and a step of transporting the ring, whose temperature has been adjusted by the temperature adjustment portion, using the transfer robot and placing it on the substrate support portion.

[0006] According to one aspect, productivity of substrate processing can be improved.

[0007] 4 is a diagram showing an example of a substrate processing system according to an embodiment; FIG. 5 is a schematic cross-sectional view showing an example of a plasma processing apparatus; FIG. 6 is an enlarged view of a portion of FIG. 2; FIG. 7 is a first schematic side cross-sectional view showing a ring storage module; FIG. 8 is a second schematic side cross-sectional view of the ring storage module as viewed from a direction perpendicular to FIG. 4; FIG. 9 is a flowchart showing a first example of a transfer method; FIG. 10 is a flowchart showing an example of a procedure for step S101; FIG. 11 is a flowchart showing a second example of a transfer method; FIG. 12 is a flowchart showing a third example of a transfer method; FIG. 13 is an enlarged view of a portion of a plasma processing apparatus according to another embodiment; FIG. 14 is a diagram showing an example of a substrate processing system according to another embodiment; FIG. 15 is a flowchart showing a fourth example of a transfer method; FIG. 16 is a flowchart showing a fifth example of a transfer method.

[0008] Hereinafter, embodiments of the present disclosure will be described with reference to the drawings. In the drawings, the same components are denoted by the same reference numerals, and redundant explanations may be omitted.

[0009] [Substrate Processing System] A substrate processing system PS according to an embodiment will be described with reference to Fig. 1. Fig. 1 is a diagram showing an example of a substrate processing system PS according to an embodiment. As shown in Fig. 1, the substrate processing system PS is a system capable of performing various processes, such as plasma processing, on a substrate W. The substrate W may be, for example, a semiconductor wafer.

[0010] The substrate processing system PS includes a vacuum transfer module TM, multiple processing modules PM1 to PM7, a ring storage module RSM, multiple load lock modules LL1 to LL3, an atmospheric transfer module LM, load ports LP1 to LP4, an aligner AN, and a controller CU. The vacuum transfer module TM is also referred to as a transfer module. The processing modules PM1 to PM7 are also referred to as process modules. The ring storage module RSM is also referred to as a ring stocker module. The atmospheric transfer module LM is also referred to as a loader module.

[0011] The vacuum transfer module TM has a rectangular shape in a plan view. The vacuum transfer module TM is connected to the process modules PM1 to PM7, the load lock modules LL1 to LL3, and the ring storage module RSM. The vacuum transfer module TM has a vacuum transfer chamber. The interior of the vacuum transfer chamber is maintained in a vacuum atmosphere. A transfer robot TR1 is provided in the vacuum transfer chamber (inside the vacuum transfer module TM).

[0012] The transport robot TR1 is configured to be able to rotate, extend, and move up and down freely. The transport robot TR1 has an upper fork FK1 and a lower fork FK2. The upper fork FK1 and the lower fork FK2 of the transport robot TR1 are configured to be able to hold substrates W and rings 113 (inner ring 113a and outer ring 113b), respectively. The transport robot TR1 holds and transports substrates W and rings 113 between the processing modules PM1 to PM7, the load lock modules LL1 to LL3, and the ring storage module RSM.

[0013] A position detection sensor S1 is provided on the upper fork FK1. A position detection sensor S2 is provided on the lower fork FK2. The position detection sensors S1 and S2 detect the positions of the inner ring 113a and the outer ring 113b placed on the processing modules PM1 to PM7. The position detection sensors S1 and S2 may be, for example, optical displacement sensors, cameras, etc.

[0014] The vacuum transfer module TM may be provided with position detection sensors S11 and S12. The position detection sensors S11 and S12 are provided on the transport path of the substrate W and ring 113 (inner ring 113a) transported from the vacuum transfer module TM to the processing module PM1. The position detection sensors S11 and S12 are used when transporting the substrate W or ring 113 from the vacuum transfer module TM to the processing module PM1, and when transporting the substrate W or ring 113 from the processing module PM1 to the vacuum transfer module TM. The position detection sensors S11 and S12 are provided, for example, near a gate valve (not shown) separating the vacuum transfer module TM and the processing module PM1. The position detection sensors S11 and S12 are positioned, for example, so that the distance between them is smaller than the outer diameter of the substrate W and smaller than the inner diameter of the inner ring 113a. The vacuum transfer module TM may be provided with position detection sensors S21, S22, S31, S32, S41, S42, S51, S52, S61, S62, S71, and S72, similar to the position detection sensors S11 and S12.

[0015] The processing modules PM1 to PM7 are connected to a vacuum transfer module TM. Each of the processing modules PM1 to PM7 has a vacuum processing chamber. A substrate support 11 (see FIG. 2) is provided inside the vacuum processing chamber. After a substrate W is placed on the substrate support 11, each of the processing modules PM1 to PM7 reduces the pressure inside the module, introduces a processing gas, applies RF power to generate plasma, and performs plasma processing on the substrate W using the plasma. The vacuum transfer module TM and the processing modules PM1 to PM7 are separated by a gate valve (not shown) that can be opened and closed.

[0016] The ring storage module RSM is an example of a device for storing the ring 113, and is connected to the vacuum transfer module TM. The ring storage module RSM stores, for example, the inner ring 113a and the outer ring 113b that make up the ring 113. The ring storage module RSM may be configured to store only the inner ring 113a. The ring storage module RSM may be configured to store only the outer ring 113b. The inner ring 113a and the outer ring 113b are transferred between the processing modules PM1 to PM7 and the ring storage module RSM by the transfer robot TR1. The vacuum transfer module TM and the ring storage module RSM are separated by a gate valve G (see FIG. 5) that can be opened and closed.

[0017] The load lock modules LL1 to LL3 are provided between the vacuum transfer module TM and the atmospheric transfer module LM. The load lock modules LL1 to LL3 are connected to the vacuum transfer module TM and the atmospheric transfer module LM. The load lock modules LL1 to LL3 each have an internal pressure variable chamber that can be switched between vacuum and atmospheric pressure. A stage (not shown) on which a substrate W can be placed is provided in the internal pressure variable chamber. When transferring a substrate W from the atmospheric transfer module LM to the vacuum transfer module TM, the load lock modules LL1 to LL3 receive the substrate W from the atmospheric transfer module LM while maintaining the internal pressure variable chamber at atmospheric pressure, and then depressurize the internal pressure variable chamber to transfer the substrate W to the vacuum transfer module TM. When transferring a substrate W from a vacuum transfer module TM to an atmospheric transfer module LM, the load lock modules LL1 to LL3 receive the substrate W from the vacuum transfer module TM while maintaining a vacuum in the internal pressure variable chamber, and then pressurize the internal pressure variable chamber to atmospheric pressure to transfer the substrate W to the atmospheric transfer module LM. The load lock modules LL1 to LL3 and the vacuum transfer module TM are separated by an openable / closeable gate valve (not shown). The load lock modules LL1 to LL3 and the atmospheric transfer module LM are separated by an openable / closeable gate valve (not shown).

[0018] The atmospheric transfer module LM is disposed opposite the vacuum transfer module TM. The atmospheric transfer module LM may be, for example, an Equipment Front End Module (EFEM). The atmospheric transfer module LM has a rectangular shape in a plan view. The atmospheric transfer module LM has an atmospheric transfer chamber. The interior of the atmospheric transfer chamber is maintained at atmospheric pressure. A transfer robot TR2 is disposed inside the atmospheric transfer chamber. The transfer robot TR2 is configured to be able to rotate, extend, and move up and down freely. Like the transfer robot TR1, the transfer robot TR2 also has two forks (upper fork and lower fork) capable of holding and transporting substrates W. The transfer robot TR2 holds and transports substrates W between the load ports LP1 to LP4, the aligner AN, and the load lock modules LL1 to LL3. The atmospheric transfer module LM may have a fan filter unit (FFU).

[0019] The load ports LP1 to LP4 are connected to an atmospheric transfer module LM. A plurality of substrate storage containers CS1 are placed on the load ports LP1 to LP4. The substrate storage container CS1 may be, for example, a front-opening unified pod (FOUP) that stores a plurality of substrates W (e.g., 25 substrates W).

[0020] The aligner AN is connected to the atmospheric transfer module LM. The aligner AN is configured to adjust the position of the substrate W. The aligner AN may be provided inside an atmospheric transfer chamber.

[0021] The control unit CU controls each part of the substrate processing system PS. The control unit CU controls, for example, the operation of the transfer robot TR1 provided in the vacuum transfer module TM, the operation of the transfer robot TR2 provided in the atmospheric transfer module LM, and the opening and closing of the gate valve. The control unit CU may be, for example, a computer. The control unit CU has a processor such as a central processing unit (CPU), a random access memory (RAM), a read-only memory (ROM), and an auxiliary storage device. The CPU operates based on a program stored in the ROM or the auxiliary storage device, and controls each part of the substrate processing system PS.

[0022] 2 and 3, an example of a plasma processing apparatus 1 that can be applied to the processing modules PM1 to PM7 in FIG. 1 will be described. Fig. 2 is a schematic cross-sectional view showing the example of the plasma processing apparatus 1. Fig. 3 is an enlarged view of a portion of Fig. 2.

[0023] The plasma processing apparatus 1 includes a plasma processing chamber 10 , a gas supply unit 20 , an RF power supply unit 30 , an exhaust system 40 , a lifter 50 , and a control unit 90 .

[0024] The plasma processing chamber 10 includes a substrate support 11 and an upper electrode 12. The substrate support 11 is disposed in a lower region of a plasma processing space 10s within the plasma processing chamber 10. The upper electrode 12 is disposed above the substrate support 11 and functions as part of the top plate of the plasma processing chamber 10.

[0025] The substrate support 11 supports a substrate W in the plasma processing space 10s. The substrate support 11 includes a lower electrode 111, an electrostatic chuck 112, a ring 113 (hereinafter also referred to as a ring assembly 113), and an insulating member 115. The substrate support 11 also includes a support temperature adjustment mechanism 116 that adjusts the temperatures of the supported substrate W and ring 113.

[0026] The electrostatic chuck 112 is disposed on the lower electrode 111. The electrostatic chuck 112 has an upper surface including a substrate support surface 112a and a ring support surface 112b. The electrostatic chuck 112 supports a substrate W on the substrate support surface 112a. The electrostatic chuck 112 supports an inner ring 113a on the ring support surface 112b. The electrostatic chuck 112 has an insulating member 112c, a first chucking electrode 112d, and a second chucking electrode 112e. The first chucking electrode 112d and the second chucking electrode 112e are embedded in the insulating member 112c. The first chucking electrode 112d is located below the substrate support surface 112a. The electrostatic chuck 112 attracts and holds the substrate W on the substrate support surface 112a by applying a voltage to the first chucking electrode 112d. The second chucking electrode 112e is located below the ring support surface 112b. The electrostatic chuck 112 attracts and holds the inner ring 113a on the ring support surface 112b by applying a voltage to the second attracting electrode 112e. In the example shown in Figures 2 and 3, the electrostatic chuck 112 includes a monopolar electrostatic chuck that attracts and holds the substrate W, and a bipolar electrostatic chuck that attracts and holds the inner ring 113a. However, a bipolar electrostatic chuck may be used instead of the monopolar electrostatic chuck, and a monopolar electrostatic chuck may be used instead of the bipolar electrostatic chuck.

[0027] The ring assembly 113 includes an inner ring 113a and an outer ring 113b. The inner ring 113a has an annular shape. The inner ring 113a is disposed around the substrate W on the upper peripheral surface of the lower electrode 111. The inner ring 113a improves the uniformity of plasma processing on the substrate W. The inner ring 113a is formed of a conductive material such as silicon (Si) or silicon carbide (SiC). The inner ring 113a may be formed of an insulating material such as quartz. The outer ring 113b has an annular shape. The outer ring 113b is disposed on the outer periphery of the inner ring 113a. The outer ring 113b protects the upper surface of the insulating member 115 from, for example, plasma. The outer ring 113b is formed of an insulating material such as quartz. The outer ring 113b may be formed of a conductive material such as silicon or silicon carbide. In the illustrated example, the inner periphery of the outer ring 113b is located inside the outer periphery of the inner ring 113a, and the outer periphery of the inner ring 113a is located outside the inner periphery of the outer ring 113b, so that the inner ring 113a and the outer ring 113b partially overlap. In other words, the outer ring 113b surrounds the inner ring 113a and overlaps the inner ring 113a below in a plan view. As a result, when a plurality of support pins 521 (described later) move up and down, the outer ring 113b and the inner ring 113a move up and down together. The insulating member 115 is disposed so as to surround the lower electrode 111. The insulating member 115 is fixed to the bottom of the plasma processing chamber 10 and supports the lower electrode 111.

[0028] The support temperature adjustment mechanism 116 adjusts the temperatures of the substrate W and the ring assembly 113 together. The support temperature adjustment mechanism 116 is provided inside the electrostatic chuck 112 (or inside the lower electrode 111 or the insulating member 115). The support temperature adjustment mechanism 116 can be, for example, a heater, a structure that circulates a heat exchange medium from a heat exchange medium circulator (not shown), or a structure that supplies a heat transfer gas from a gas supply / exhaust unit (not shown).

[0029] The upper electrode 12, together with the insulating member 13, constitutes the plasma processing chamber 10. The upper electrode 12 supplies one or more types of processing gas from the gas supply unit 20 to the plasma processing space 10s. The upper electrode 12 includes a top plate 121 and a support 122. The underside of the top plate 121 defines the plasma processing space 10s. The top plate 121 is provided with multiple gas inlets 121a. Each of the multiple gas inlets 121a penetrates the top plate 121 in the thickness direction (vertical direction). The support 122 detachably supports the top plate 121. A gas diffusion chamber 122a is provided inside the support 122. Multiple gas inlets 122b extend downward from the gas diffusion chamber 122a. The multiple gas inlets 122b are respectively connected to the multiple gas inlets 121a. A gas supply port 122c is provided in the support 122. The upper electrode 12 supplies one or more process gases from the gas supply port 122c through the gas diffusion chamber 122a, the plurality of gas inlets 122b, and the plurality of gas inlets 121a to the plasma processing space 10s.

[0030] A loading / unloading port 10p is provided in a sidewall of the plasma processing chamber 10. The substrate W is transferred through the loading / unloading port 10p between the plasma processing space 10s and the outside of the plasma processing chamber 10. The loading / unloading port 10p is opened and closed by a gate valve G.

[0031] The gas supply unit 20 includes one or more gas sources 21 and one or more flow rate controllers 22. The gas supply unit 20 supplies one or more process gases from the respective gas sources 21 to the gas supply port 122c via the respective flow rate controllers 22. The flow rate controllers 22 may include, for example, mass flow controllers or pressure-controlled flow rate controllers. The gas supply unit 20 may include one or more flow rate modulation devices that modulate or pulse the flow rates of the one or more process gases.

[0032] The RF power supply unit 30 includes two RF power sources (a first RF power source 31a and a second RF power source 31b) and two matchers (a first matcher 32a and a second matcher 32b). The first RF power source 31a supplies a first RF power to the lower electrode 111 via the first matcher 32a. The frequency of the first RF power may be, for example, 13 MHz to 150 MHz. The second RF power source 31b supplies a second RF power to the lower electrode 111 via the second matcher 32b. The frequency of the second RF power may be, for example, 400 kHz to 13.56 MHz. A DC power source may be used instead of the second RF power source 31b.

[0033] The exhaust system 40 is connected to a gas exhaust port 10e provided at the bottom of the plasma processing chamber 10, for example. The exhaust system 40 may include a pressure regulating valve and a vacuum pump. The pressure in the plasma processing space 10s is regulated by the pressure regulating valve. The vacuum pump may include a turbomolecular pump, a dry pump, or a combination thereof.

[0034] The lifter 50 includes a first lifter 51 and a second lifter 52 .

[0035] The first lifter 51 includes a plurality of support pins 511 and an actuator 512. The support pins 511 are inserted into through holes H1 formed in the lower electrode 111 and the electrostatic chuck 112 and are capable of protruding and retracting relative to the upper surface of the electrostatic chuck 112. The support pins 511 protrude from the upper surface of the electrostatic chuck 112, thereby supporting the substrate W with their upper ends abutting the lower surface of the substrate W. The actuator 512 raises and lowers the support pins 511. Examples of the actuator 512 that can be used include a DC motor, a stepping motor, a linear motor, an air-driven mechanism such as an air cylinder, and a piezoelectric actuator. The first lifter 51 raises and lowers the support pins 511, for example, when transferring the substrate W between the transport robot TR1 and the substrate support unit 11.

[0036] The second lifter 52 includes a plurality of support pins 521 and an actuator 522. The support pins 521 are stepped support pins formed from a cylindrical (solid rod-like) member. The support pins 521 have a lower pin 523 and an upper pin 524. The upper pin 524 is provided on top of the lower pin 523. The outer diameter of the lower pin 523 is larger than the outer diameter of the upper pin 524. As a result, a step is formed by the upper end surface 523a of the lower pin 523. The lower pin 523 and the upper pin 524 are, for example, integrally molded.

[0037] The support pin 521 is inserted through a through hole H11 formed in the lower electrode 111, a through hole H12 formed in the insulating member 115, and a through hole H13 formed in the outer ring 113b, and is capable of protruding and retracting from the upper surface of the insulating member 115 and the upper surface of the outer ring 113b. The inner diameters of the through holes H11 and H12 are slightly larger than the outer diameter of the lower pin 523. The inner diameter of the through hole H13 is slightly larger than the outer diameter of the upper pin 524 and smaller than the outer diameter of the lower pin 523.

[0038] The support pin 521 is displaceable between a standby position, a first support position, and a second support position.

[0039] The standby position is a position where the upper end surfaces 524a of the upper pins 524 are lower than the lower surface of the inner ring 113a. When the support pins 521 are in the standby position, the inner ring 113a and the outer ring 113b are supported on the electrostatic chuck 112 and the insulating member 115, respectively, without being lifted by the support pins 521.

[0040] The first support position is a position above the standby position, where the upper end surface 524a of the upper pin 524 protrudes above the upper surface of the outer ring 113b and the upper end surface 523a of the lower pin 523 is below the lower surface of the outer ring 113b. By moving to the first support position, the support pin 521 supports the inner ring 113a by bringing the upper end surface 524a of the upper pin 524 into contact with a recess formed in the lower surface of the inner ring 113a.

[0041] The second support position is a position higher than the first support position, where the upper end surface 523a of the lower pin 523 protrudes above the upper surface of the insulating member 115. By moving to the second support position, the support pin 521 supports the inner ring 113a by bringing the upper end surface 524a of the upper pin 524 into contact with the recess, and supports the outer ring 113b by bringing the upper end surface 523a of the lower pin 523 into contact with the lower surface of the outer ring 113b.

[0042] The actuator 522 raises and lowers the plurality of support pins 521. The actuator 522 may be configured similarly to the actuator 512.

[0043] When transferring the inner ring 113a between the transport robot TR1 and the substrate support unit 11, the second lifter 52 moves the plurality of support pins 521 to the first support position to lift the inner ring 113a. When transferring the inner ring 113a and the outer ring 113b between the transport robot TR1 and the substrate support unit 11, the second lifter 52 moves the plurality of support pins 521 to the second support position to lift the inner ring 113a and the outer ring 113b. Alternatively, when transferring the outer ring 113b between the transport robot TR1 and the substrate support unit 11 without the inner ring 113a, the second lifter 52 moves the plurality of support pins 521 to the second support position to lift the outer ring 113b.

[0044] The control unit 90 controls each component of the plasma processing apparatus 1. The control unit 90 includes, for example, a computer 91. The computer 91 includes, for example, a CPU 911, a storage unit 912, and a communication interface 913. The CPU 911 is configured to perform various control operations based on programs stored in the storage unit 912. The storage unit 912 includes at least one memory type selected from the group consisting of auxiliary storage devices such as RAM, ROM, HDD (Hard Disk Drive), and SSD (Solid State Drive). The communication interface 913 may communicate with the plasma processing apparatus 1 via a communication line such as a LAN (Local Area Network). The control unit 90 may be provided separately from the control unit CU or may be included in the control unit CU.

[0045] [Ring Storage Module] An example of the ring storage module RSM included in the substrate processing system PS of Fig. 1 will be described with reference to Fig. 4 and Fig. 5. Fig. 4 is a first schematic side cross-sectional view showing the ring storage module RSM. Fig. 5 is a second schematic side cross-sectional view of the ring storage module RSM as seen from a direction perpendicular to Fig. 4.

[0046] The ring storage module RSM has a chamber 70 installed on a frame 60, and a machine room 81 above the chamber 70. The chamber 70 has an exhaust port 71 at the bottom connected to an exhaust unit 72, and the inside of the chamber 70 can be depressurized by the exhaust unit 72. The chamber 70 also has a gas supply unit (not shown), and an inert gas (e.g., N ２ The pressure inside the machine chamber 81 can be adjusted by supplying a gas (gas). The machine chamber 81 is, for example, at atmospheric pressure.

[0047] The chamber 70 includes a storage 75 therein that can hold a plurality of inner rings 113a and a plurality of outer rings 113b. The storage 75 includes a stage 73 and a basket 74 provided below the stage 73. The storage 75 can be raised and lowered by a ball screw 76. The machine room 81 includes a line sensor 82 that detects the position, orientation, etc. of the consumable parts, and a motor 77 that drives the ball screw 76. A window 84 made of quartz or the like is provided in the partition wall between the chamber 70 and the machine room 81 so that the line sensor 82 can receive light from a light-emitting unit 83, which will be described later.

[0048] The stage 73 carries the inner ring 113a or the outer ring 113b. The stage 73 has a non-rotating light-emitting unit 83 facing the line sensor 82. The stage 73 is rotatable in the θ direction, rotating the placed inner ring 113a or outer ring 113b in a predetermined direction. In other words, the stage 73 and the line sensor 82 constitute an alignment device that performs alignment (positioning) of the inner ring 113a or outer ring 113b. During alignment, the orientation flat (OF) or notch of the inner ring 113a or outer ring 113b is aligned in a predetermined direction. Alternatively, during alignment, the center position of the inner ring 113a or outer ring 113b may be aligned.

[0049] The line sensor 82 detects the amount of light emitted from the light-emitting unit 83 and outputs the detected amount of light to the control unit CU. The line sensor 82 is configured to detect the inner ring 113a and the outer ring 113b and align them. The control unit CU detects the orientation flat of the inner ring 113a or the outer ring 113b by utilizing the fact that the detected amount of light changes depending on the presence or absence of an orientation flat. The control unit CU may be configured to align the inner ring 113a based on the detection result of the inner part of the line sensor 82 and to align the outer ring 113b based on the detection result of the outer part of the line sensor 82. The line sensor 82 may be configured using a light-receiving element such as a charge-coupled device (CCD), a complementary metal oxide semiconductor (CMOS), or a photodiode.

[0050] The ring storage module RSM may use a position detection sensor including an inner circumference sensor that detects the position of the inner circumference of the inner ring 113a or the outer ring 113b and an outer circumference sensor that detects the position of the outer circumference of the inner ring 113a or the outer ring 113b. Furthermore, for example, the ring storage module RSM may use another optical sensor or a camera instead of the line sensor 82. In this case, the control unit CU calculates position information of the inner ring 113a or the outer ring 113b based on an image captured by the camera, for example, by using image processing technology.

[0051] The basket 74 is provided below the stage 73. One or more cassettes 78 are placed inside the basket 74. The cassette 78 is a storage container that stores the inner ring 113a or the outer ring 113b and can be removed from the basket 74. The cassette 78 is open on the front side of the ring storage module RSM. The basket 74 holds multiple cassettes 78 at intervals in the vertical direction.

[0052] In addition to the stage 73 and the basket 74, the storage 75 has a guide 79 on its side that is supported by a ball screw 76. The ball screw 76 connects the upper and lower surfaces of the chamber 70, penetrates the upper surface of the chamber 70, and is connected to a motor 77 in the machine room 81. The penetration portion on the upper surface of the chamber 70 is sealed so that the ball screw 76 can rotate. The ball screw 76 is rotated by the motor 77 to move the storage 75 in the vertical direction (Z-axis direction).

[0053] The chamber 70 also includes a temperature adjustment unit 61 therein that adjusts the temperature of the inner ring 113a or the outer ring 113b. The ring storage module RSM has a stage 73, a basket 74, and a temperature adjustment unit 61 arranged vertically relative to the vacuum transfer module TM. This allows the transfer robot TR1 of the vacuum transfer module TM to easily access each height position of the ring storage module RSM.

[0054] The temperature adjustment unit 61 includes a first temperature adjustment device 62 and a second temperature adjustment device 63 to adjust the temperatures of one inner ring 113a and one outer ring 113b separately. For example, the first temperature adjustment device 62 is configured to adjust the temperature of the inner ring 113a, and the second temperature adjustment device 63 is configured to adjust the temperature of the outer ring 113b. Depending on the processing status, the temperature adjustment unit 61 may adjust the temperature of the outer ring 113b using the first temperature adjustment device 62 or the temperature of the inner ring 113a using the second temperature adjustment device 63. The temperature adjustment unit 61 is not limited to being composed of multiple devices, and may also be composed of a single device. Like the storage 75, the temperature adjustment unit 61 may be configured to be movable in the vertical direction.

[0055] The first temperature adjustment device 62 has a mounting base 621 on which the inner ring 113a is placed, located in an internal temperature adjustment chamber. A shutter 622 capable of opening and closing the temperature adjustment chamber is provided on a side surface of a housing 624 of the first temperature adjustment device 62. A temperature adjustment mechanism 623 is provided on the internal temperature adjustment chamber of the first temperature adjustment device 62, or in the housing 624 or mounting base 621. The second temperature adjustment device 63 has a mounting base 631 on which the outer ring 113b is placed, located in an internal temperature adjustment chamber. A shutter 632 capable of opening and closing the temperature adjustment chamber is provided on a side surface of a housing 634 of the second temperature adjustment device 63. A temperature adjustment mechanism 633 is provided on the internal temperature adjustment chamber of the second temperature adjustment device 63, or in the housing 634 or mounting base 621.

[0056] The temperature adjustment mechanisms 623, 633 may be, for example, a heater that heats the ring 113, or a structure that supplies temperature-adjusted gas toward the ring 113 in order to heat or cool the ring 113, together with an exhaust mechanism (not shown). Furthermore, the mounting tables 621, 631 having the temperature adjustment mechanisms 623, 633 may be structured to circulate a temperature-adjusted heat exchange medium therein in order to heat or cool the ring 113. The temperature adjustment mechanisms 623, 633 adjust the temperature of the ring 113 to within a range of 10° C. from the temperature of the substrate support 11 of the target process module among the process modules PM1 to PM7 into which the ring 113 is loaded. Alternatively, if the temperature adjustment mechanisms 623 and 633 are mechanisms for circulating a heat exchange medium, the temperature of the ring 113 may be adjusted to within 10°C of the temperature of the heat exchange medium circulating through the flow path of the substrate support 11 in the processing module PM1-PM7 into which the ring 113 is loaded. For example, the temperature adjustment mechanisms 623 and 633 adjust the temperature to a target temperature set by the control unit CU within a range of -100 to 300°C. Note that, for example, if all of the processing modules PM1-PM7 adjust their temperatures within a range of approximately 40 to 300°C, the temperature adjustment mechanisms 623 and 633 may be configured to include only a heater. The housings 624 and 634 are sized to accommodate only one ring 113 (the inner ring 113a or the outer ring 113b), thereby accelerating the temperature adjustment speed.

[0057] The first temperature adjustment device 62 and the second temperature adjustment device 63 may be provided with an intake / exhaust mechanism (not shown) for supplying and exhausting gas to and from the temperature adjustment chamber in order to remove deposits such as reaction products adhering to the inner ring 113a or the outer ring 113b used in the process modules PM1 to PM7, separate from the temperature adjustment mechanisms 623 and 633. That is, the gas supplied to the temperature adjustment chamber by the intake / exhaust mechanism exhausts deposits volatilized by thermal decomposition or chemical reaction from the temperature adjustment chamber. Note that, if a structure for supplying and exhausting a temperature adjustment gas is used as the temperature adjustment mechanisms 623 and 633, the deposits may be exhausted by supplying and exhausting this temperature adjustment gas.

[0058] The ring storage module RSM is detachably connected to the vacuum transfer module TM via a gate valve G. An upper fork FK1 and a lower fork FK2 of a transfer robot TR1 of the vacuum transfer module TM can enter the chamber 70 via the gate valve G. The upper fork FK1 and the lower fork FK2 transfer the inner ring 113a or the outer ring 113b into and out of the cassette 78, the inner ring 113a or the outer ring 113b into and out of the stage 73, and the inner ring 113a or the outer ring 113b into and out of the temperature adjustment unit 61.

[0059] The door 80 is opened and closed, for example, when the cassette 78 is removed from the chamber 70 or when the cassette 78 is placed in the chamber 70 .

[0060] The light-emitting unit 85 and the sheet number detection sensor 86 detect the number of sheets in the inner ring 113a or the outer ring 113b placed on the cassette 78 when the storage device 75 is moved. The light-emitting unit 85 is, for example, an LED (Light Emitting Diode), a semiconductor laser, or the like. The sheet number detection sensor 86 detects the amount of light emitted from the light-emitting unit 85 and outputs the detected amount of light to the control unit CU. The control unit CU detects the number of sheets in the inner ring 113a or the outer ring 113b by counting the number of times the light emitted from the light-emitting unit 85 is blocked based on the detected amount of light. The sheet number detection sensor 86 can be, for example, a CCD, a CMOS, a photodiode, a phototransistor, or the like.

[0061] The control unit CU recognizes the arrangement, number, and status (new, used, etc.) of the inner rings 113a and outer rings 113b stored in each cassette 78 of the ring storage module RSM. Furthermore, the control unit CU determines whether or not replacement of the inner ring 113a or outer ring 113b is necessary based on triggers such as user instructions, the number of substrate processing operations, the quality of the substrates W, sensor values ​​from each of the processing modules PM1 to PM7, and the occurrence of an error. If it determines that replacement is necessary, the control unit CU recovers the ring 113 (inner ring 113a or outer ring 113b) of the processing module to be replaced and performs processing using the replacement ring 113 stored in the ring storage module RSM.

[0062] Furthermore, the substrate processing system PS includes a temperature adjustment unit 61 in the ring storage module RSM, which adjusts the temperature of the rings 113 (inner ring 113a and outer ring 113b) before transporting them to each of the processing modules PM1 to PM7. This shortens the time required to adjust the temperature of the rings 113 in each of the processing modules PM1 to PM7, thereby improving the productivity of the substrate processing system PS as a whole. When setting the rings 113 in each of the processing modules PM1 to PM7, the control unit CU manages the transport timing, the position of the ring 113 to be transported, the temperature (temperature adjustment period), etc., and places the ring 113 in the specified processing module.

[0063] [Transportation Method] Fig. 6 is a flowchart showing a first example of a transport method. Next, a transport method for placing the ring 113 in a desired processing module will be described with reference to Fig. 6. Note that the following describes the case where the ring 113 is transported between the ring storage module RSM and processing module PM1. When the processing module to be replaced is one of the other processing modules PM2 to PM7, the same method as when the processing module to be replaced is processing module PM1 can be used.

[0064] The first example of the transfer method is a method of replacing both the edge ring FR and the cover ring CR that constitute the ring 113 in the substrate processing system PS. The edge ring FR corresponds to the inner ring 113a shown in Fig. 3. The cover ring CR corresponds to the outer ring 113b shown in Fig. 3. The cover ring CR is an example of a first ring, and the edge ring FR is an example of a second ring.

[0065] The first example of the transport method is started, for example, when both the edge ring FR and the cover ring CR are replaced. The first example of the transport method is performed in a state where there are no substrates W in the processing module PM1 and the loading / unloading of substrates W and substrate processing are stopped.

[0066] The transfer method of the first example includes steps S101 to S117. Steps S101 to S117 are performed by the control unit CU controlling each part of the substrate processing system PS.

[0067] In step S101, the control unit CU adjusts the temperatures of the replacement edge ring FR and the replacement covering ring CR. The replacement edge ring FR may be new (unused) or may be a used ring that is not very worn, and the replacement covering ring CR may be new (unused) or may be a used ring that is not very worn.

[0068] In step S101, the control unit CU may determine whether the ring 113 needs to be replaced and may also determine whether the ring 113 can be replaced. The need for ring 113 replacement may be determined based on the trigger described above. The control unit CU determines whether the replacement can be performed based on the presence or absence of a substrate W in the processing module PM1 to be replaced, the transfer schedule of the transport robot TR1, and the like. If it is determined that a substrate W is present in the processing module PM1 or the transport robot TR1, the control unit CU may transport the substrate W from the vacuum transfer module TM to one of the load lock modules LL1 to LL3 using the transport robot TR1, and then stop the transport of the substrate W by the transport robot TR1.

[0069] 7 is a flowchart showing an example of the procedure of step S101. In step S101, the control unit CU first determines whether or not to replace the ring 113 (whether or not the replacement is necessary and whether or not the replacement can be performed) (step S1011). If the ring 113 is not to be replaced (step S1011: NO), the control unit CU repeats this monitoring. On the other hand, if the ring 113 is to be replaced (step S1011: YES), the control unit CU proceeds to step S1012.

[0070] In step S1012, the control unit CU specifies the rings to be newly used from among the replacement edge rings FR and replacement covering rings CR stored in the cassettes 78 of the ring storage module RSM. Then, after specifying the replacement edge rings FR and replacement covering rings CR, the control unit CU proceeds to an operation of adjusting the temperatures of those rings using the temperature adjustment unit 61.

[0071] In step S1013, the control unit CU operates the transport robot TR1 based on the specified position of the replacement edge ring FR, for example, by using the upper fork FK1 to remove the replacement edge ring FR, and then transports the replacement edge ring FR into the first temperature adjustment device 62. In step S1014, the control unit CU places the replacement edge ring FR on the mounting table 621 of the first temperature adjustment device 62 and closes the shutter unit 622, and then uses the temperature adjustment mechanism 623 to adjust the temperature of the replacement edge ring FR to a target temperature. The target temperature is, for example, the same as the temperature of the substrate support unit 11 (the temperature inside the plasma processing chamber 10) of the processing module PM1 to be replaced. This allows the temperature of the replacement edge ring FR to be appropriately adjusted before being transported to the processing module PM1.

[0072] Similarly, in step S1015, the control unit CU operates the transport robot TR1 based on the specified position of the replacement covering ring CR, for example, by using the lower fork FK2 to remove the replacement covering ring CR, and carries the replacement covering ring CR into the second temperature adjustment device 63. In step S1016, the control unit CU places the replacement covering ring CR on the mounting table 631 of the second temperature adjustment device 63 and closes the shutter unit 632, and then adjusts the temperature of the replacement covering ring CR to a target temperature using the temperature adjustment mechanism 633. The target temperature is set to be the same as the target temperature of the replacement edge ring FR of the first temperature adjustment device 62. This allows the temperature of the replacement covering ring CR to be appropriately adjusted before being transported to the processing module PM1.

[0073] The control unit CU also measures the temperature adjustment period during the temperature adjustment of the replacement edge ring FR and the replacement covering ring CR, and monitors whether the measured temperature adjustment period has reached a preset target period (step S1017). If the temperature adjustment period is equal to or greater than the target period, the control unit CU recognizes that the temperature adjustment of the replacement edge ring FR and the temperature adjustment of the replacement covering ring CR has been completed, and permits removal of the replacement edge ring FR and the replacement covering ring CR from the temperature adjustment unit 61 (step S1018). The completion of the temperature adjustment of the replacement edge ring FR and the replacement covering ring CR may be recognized by various methods. For example, temperature sensors (not shown) may be installed in the first temperature adjustment device 62 and the second temperature adjustment device 63, and the completion of the temperature adjustment may be recognized based on the temperatures of the replacement edge ring FR and the replacement covering ring CR detected by the temperature sensors reaching the target temperatures. The target temperature can be within 10°C of the temperature of the substrate support part 11 of the processing module into which the ring 113 is to be transported, or within 10°C of the temperature of the heat exchange medium flowing through the flow path of the substrate support part 11 of the processing module into which the ring 113 is to be transported.

[0074] The control unit CU may perform other steps of the transport method or transport the substrate W between other process modules PM2 to PM7 and load lock modules LL1 to LL3 while the temperature adjustment unit 61 is adjusting the temperature of the replacement edge ring FR and the replacement cover ring CR. This allows the substrate processing system PS to further improve the efficiency of its overall operations.

[0075] Furthermore, it is preferable to adjust the temperature of the replacement edge ring FR and the replacement cover ring CR as quickly as possible when it is determined that the ring 113 needs to be replaced. This allows the temperature-adjusted replacement edge ring FR or replacement cover ring CR to be transported into the processing module PM1 more quickly. Therefore, when the control unit CU determines that the ring 113 needs to be replaced, it may prioritize transport of the replacement edge ring FR or replacement cover ring CR into the temperature adjustment unit 61 using the transport robot TR1. For example, even if a substrate W is to be transported from the load lock modules LL1 to LL3 to the processing modules PM2 to PM7, the control unit CU may prioritize step S101 (perform interrupt processing) to transport and adjust the temperature of the ring 113. Furthermore, as described below, when transporting the ring 113 into the processing module PM1, the replacement cover ring CR is transported first, followed by the replacement edge ring FR. Therefore, the control unit CU may first carry the replacement covering CR into the temperature adjustment unit 61 and start temperature adjustment.

[0076] Returning to Figure 6, in step S102, the control unit CU transports the edge ring FR (hereinafter also referred to as the used edge ring FR) that was placed on the substrate support part 11 of the processing module PM1 and used for substrate processing out of the processing module PM1 using the transport robot TR1.

[0077] In step S103, the control unit CU causes the transport robot TR1 to load the used edge ring FR, which was unloaded from the processing module PM1 in step S102, into the ring storage module RSM. At this time, the transport robot TR1 stores the used edge ring FR in an empty cassette 78 among the multiple cassettes 78.

[0078] In step S104, the control unit CU aligns the replacement covering ring CR using the stage 73 (see FIG. 5) of the ring storage module RSM. Therefore, the temperature adjustment of the replacement covering ring CR by the temperature adjustment unit 61 is completed at least before the start of step S104. The replacement covering ring CR is first loaded into the processing module PM1 and its temperature is also adjusted therein. Therefore, the target temperature for adjusting the temperature of the replacement covering ring CR may be lower than the target temperature for adjusting the temperature of the replacement edge ring FR.

[0079] When performing the alignment, the control unit CU causes the transfer robot TR1 to take out the temperature-adjusted replacement covering CR from the second temperature adjustment device 63 of the ring storage module RSM and place the replacement covering CR on the stage 73 of the same ring storage module RSM. As described above, the alignment of the replacement covering CR is performed by rotating the stage 73 under the monitoring of the line sensor 82 while aligning the orientation flat of the replacement covering CR in a predetermined direction.

[0080] In step S105, the control unit CU causes the transfer robot TR1 to take out the replacement cover ring CR, which has been aligned in step S104, from the stage 73 and carry it out of the ring storage module RSM.

[0081] In step S106, the control unit CU causes the transport robot TR1 to unload the covering CR that was placed on the substrate support part 11 of the processing module PM1 and used in substrate processing (hereinafter also referred to as the used covering CR) from the processing module PM1 while holding the unloaded replacement covering CR. At this time, for example, the transport robot TR1 holds the replacement covering CR with the upper fork FK1 and the used covering CR with the lower fork FK2. However, the holding manner by the transport robot TR1 may be reversed.

[0082] In step S107, the control unit CU causes the transport robot TR1 to load the replacement covering CR into the processing module PM1. When the replacement covering CR is held by the upper fork FK1 and the used covering CR is held by the lower fork FK2, the replacement covering CR is positioned above the used covering CR. Therefore, even if particles or the like adhering to the used covering CR fall, they can be prevented from adhering to the replacement covering CR.

[0083] In step S108, the control unit CU carries the used covering ring CR, which has been carried out from the processing module PM1 by the transport robot TR1, into the ring storage module RSM. At this time, the transport robot TR1 stores the used covering ring CR in an empty cassette 78 among the multiple cassettes 78.

[0084] In step S109, the control unit CU aligns (positions) the replacement edge ring FR using the stage 73 (see FIG. 5 ) of the ring storage module RSM. Therefore, the temperature adjustment of the replacement edge ring FR by the temperature adjustment unit 61 is completed before the replacement edge ring FR is removed from the temperature adjustment unit 61 and positioned (before step S109).

[0085] The control unit CU causes the transfer robot TR1 to take out the temperature-adjusted replacement edge ring FR from the first temperature adjustment device 62 of the ring storage module RSM and place the replacement edge ring FR on the stage 73 of the same ring storage module RSM. As with the replacement cover ring CR, the replacement edge ring FR is positioned by rotating the stage 73 under the monitoring of the line sensor 82 while aligning the orientation flat of the replacement edge ring FR in a predetermined direction.

[0086] In step S110, the control unit CU causes the transfer robot TR1 to take out the replacement edge ring FR, which has been aligned in step S109, from the stage 73 and carry it out of the ring storage module RSM.

[0087] In step S111, the control unit CU causes the transfer robot TR1 to carry the replacement edge ring FR, which has been carried out from the ring storage module RSM, into the processing module PM1.

[0088] In step S112, the control unit CU operates the transport robot TR1 to detect the position of the replacement edge ring FR placed on the substrate support portion 11 using the position detection sensor S1 of the upper fork FK1 (or the position detection sensor S2 of the lower fork FK2).

[0089] In step S113, the control unit CU determines whether or not the replacement edge ring FR is misaligned based on the detected position of the replacement edge ring FR. If the control unit CU determines that the replacement edge ring FR is misaligned (step S113: NO), the control unit CU proceeds to step S114. If the control unit CU determines that the replacement edge ring FR is not misaligned (step S113: YES), the control unit CU proceeds to step S115.

[0090] In step S114, the control unit CU causes the transport robot TR1 to unload the replacement edge ring FR from the processing module PM1. After step S115, the control unit CU returns to step S112, whereby the transfer robot TR1 corrects the position of the replacement edge ring FR unloaded from the processing module PM1 in step S115 and loads it into the processing module PM1.

[0091] In step S115, the control unit CU causes the electrostatic chuck 112 to start attracting and holding the replacement edge ring FR.

[0092] In step S116, the control unit CU adjusts the temperature of the ring 113 (replacement edge ring FR) by using the support unit temperature adjustment mechanism 116 of the substrate support unit 11. Through the above processing flow, the temperature of the replacement edge ring FR is adjusted in advance by the temperature adjustment unit 61. Therefore, the control unit CU can significantly shorten the period of time required to perform step S116.

[0093] In step S117, the control unit CU completes the sequence of the method for transporting the ring 113. Thereafter, the control unit CU loads the substrate W into the processing module PM1 having the replacement edge ring FR and the replacement cover ring CR, and can perform the substrate processing satisfactorily.

[0094] As described above, according to the first example of the transport method, the temperature of the ring 113 (replacement edge ring FR, replacement cover ring CR) is adjusted by the temperature adjustment unit 61 before being loaded into the processing module PM1. This allows the substrate processing system PS to shorten the time required to adjust the temperature of the ring 113 in the processing module PM1. As a result, the substrate processing system PS can quickly start substrate processing in the processing module PM1, thereby improving substrate processing productivity. As described above, the substrate processing system PS adjusts the temperature of the ring 113 to within 10°C of the temperature of the substrate support unit 11 or the temperature of the heat exchange medium flowing through the flow path of the substrate support unit 11, and then places the ring 113 on the electrostatic chuck 112 of the substrate support unit 11 and electrostatically attracts it. This reduces friction in the processing module PM1 due to differences in thermal expansion and contraction caused by the large temperature difference between the ring 113 and the electrostatic chuck 112 during electrostatic attraction, thereby suppressing particles caused by friction.

[0095] In the transport method, the order of some of the steps S101 to S117 shown in FIG. 6 may be reversed.

[0096] For example, step S106 may be performed between step S102 and step S103. Steps S106 and S108 may be performed between step S103 and step S104, or between step S104 and step S105. Alternatively, steps S106 and S108 may be performed in parallel with step S104. Step S108 may be performed between step S106 and step S107.

[0097] Furthermore, the timing of performing step S109 is not particularly limited as long as the temperature adjustment of the replacement edge ring FR by the temperature adjustment unit 61 has been completed. Step S109 may be performed between step S105 and step S106, between step S106 and step S107, between step S107 and step S108, or between step S108 and step S109. Alternatively, step S109 may be performed in parallel with at least one of step S106, step S107, and step S108.

[0098] 6 may not be performed. For example, in a configuration in which the edge ring FR is not attracted and held by the electrostatic chuck 112, step S115 may be omitted.

[0099] 6 may be added. For example, after the transport robot TR1 loads the replacement covering CR into the processing module PM1 in step S107, it may be determined whether or not there is a positional deviation in the replacement covering CR, and the position of the replacement covering CR may be corrected, similar to steps S112, S113, and S114.

[0100] In the above embodiment, an example has been described in which the replacement edge ring FR or replacement cover ring CR is temperature-adjusted, aligned, and then transported to the processing module. However, the substrate processing system PS and transport method may be configured such that the replacement edge ring FR or replacement cover ring CR is aligned, transported to the temperature adjustment unit 61 for temperature adjustment, and then transported to the processing module. However, the latter method requires the operation of transporting the replacement edge ring FR or replacement cover ring CR into and out of the temperature adjustment unit 61 after alignment, so the procedure of temperature adjustment by the temperature adjustment unit 61, alignment, and transport to the processing module is more preferable.

[0101] Furthermore, when the control unit CU determines that the replacement edge ring FR is misaligned, the control unit CU may not need to unload the replacement edge ring FR from the processing module PM1 in step S114. That is, the control unit CU may perform an operation of correctively moving the replacement edge ring FR using the transport robot TR1 in the processing module PM1 based on the amount of misalignment and placing it on the substrate support unit 11.

[0102] Furthermore, the substrate processing system PS and the transport method are not limited to the configuration in which two components (the edge ring FR and the cover ring CR) are transported as the ring 113 as described above, but may be configured to transport a single ring 113. The substrate processing system PS and the transport method may be configured to simultaneously adjust the temperatures of two rings in the temperature adjustment unit 61, simultaneously transport the two rings from the temperature adjustment unit 61, and simultaneously transport the two rings into the processing module to be replaced. The substrate processing system and the transport method may also be configured to adjust the temperatures of two rings at different times using a single device, the temperature adjustment unit 61, and separately transport the two rings into the processing module to be replaced.

[0103] The temperature adjustment unit 61 may also be provided at another position in the ring storage module RSM. For example, the temperature adjustment unit 61 may be provided vertically above the stage 73, or may be provided between the stage 73 and the cage 74. The temperature adjustment unit 61 may be configured to be integrated with the alignment device, for example, by providing a temperature adjustment mechanism within the stage 73.

[0104] Furthermore, the substrate processing system PS and the transfer method may be configured to include a temperature adjustment unit 61 at a location different from the ring storage module RSM, and to transfer the ring 113 to the temperature adjustment unit 61 by the transfer robot TR1. The temperature adjustment unit 61 provided separately from the ring storage module RSM may be connected to the outside of the vacuum transfer module TM or may be provided inside the vacuum transfer module TM. Alternatively, the temperature adjustment unit 61 may be provided in the load lock modules LL1 to LL3. In other words, by providing temperature adjustment mechanisms in the load lock modules LL1 to LL3, the substrate processing system PS can transfer the ring 113 to the load lock modules LL1 to LL3 and adjust the temperature.

[0105] 8 is a flowchart showing a second example of the transport method. The second example of the transport method is also a method for replacing both the edge ring FR and the cover ring CR in the substrate processing system PS. The second example of the transport method is performed when there are no substrates W in the processing module PM1 and when the loading / unloading of substrates W and substrate processing are stopped. Note that the second example of the transport method will also be described for the case where the ring 113 is transported between the ring storage module RSM and the processing module PM1. When the processing module to be replaced is one of the other processing modules PM2 to PM7, the same method as when the processing module to be replaced is the processing module PM1 can be used.

[0106] The transfer method of the second example includes steps S201 to S217. Steps S201 to S217 are performed by the control unit CU controlling each part of the substrate processing system PS.

[0107] Steps S201 to S204 may be similar to steps S101 to S104.

[0108] In step S205, the control unit CU causes the transfer robot TR1 to carry out the used covering CR from the processing module PM1.

[0109] In step S206, the control unit CU causes the transfer robot TR1 to transfer the used covering ring CR, which was transferred from the processing module PM1 in step S205, into the ring storage module RSM.

[0110] In step S207, the control unit CU causes the transfer robot TR1 to take out the replacement cover ring CR, which has been aligned in step S204, from the stage 73 and carry it out of the ring storage module RSM.

[0111] In step S208, the control unit CU aligns (positions) the replacement edge ring FR using the stage 73 (see FIG. 5 ) of the ring storage module RSM. Therefore, the temperature adjustment of the replacement edge ring FR by the temperature adjustment unit 61 is completed before the replacement edge ring FR is removed from the temperature adjustment unit 61 and alignment is performed (before step S208).

[0112] In step S209, the control unit CU causes the transfer robot TR1 to carry out the replacement edge ring FR, which has been aligned in step S209, from the ring storage module RSM.

[0113] In step S210, the control unit CU causes the transport robot TR1 to carry the held replacement covering CR into the processing module PM1.

[0114] Steps S211 to S217 may be similar to steps S111 to S117.

[0115] As described above, the transfer method of the second example also improves productivity of substrate processing by adjusting the temperature of the ring 113 (replacement edge ring FR, replacement cover ring CR) using the temperature adjustment unit 61 before loading the ring 113 into the processing module PM1. In particular, in the transfer method of the second example, the transfer robot TR1 does not simultaneously hold a used edge ring FR, a used cover ring CR, and a replacement edge ring FR, or a replacement cover ring CR. This makes it possible to suppress adhesion of particles to the replacement edge ring FR and the replacement cover ring CR.

[0116] In addition, in the second example of the conveying method, as in the first example of the conveying method, the order of some of the steps S201 to S217 shown in Figure 8 may be changed, some steps may not be performed, or other steps may be added.

[0117] For example, step S205 and step S206 may be performed between step S202 and step S203, or between step S203 and step S204. Furthermore, for example, step S216 may be omitted when the edge ring FR is not attracted and held by the electrostatic chuck 112. For example, after the transfer robot TR1 loads the replacement covering CR into the processing module PM1 in step S210, similarly to steps S212, S213, and S214, position correction of the replacement covering CR may be performed if there is a positional deviation of the replacement covering CR.

[0118] FIG. 9 is a flowchart illustrating a third example of a transport method. In this third example, the edge ring FR used in the processing modules PM1-PM7 is heated by the temperature adjustment unit 61 to remove deposits such as reaction products adhering to the ring, and the edge ring FR with the deposits removed (hereinafter also referred to as an improved edge ring FR) is returned to the processing module PM1-PM7. The control unit CU initiates this third example of the transport method based on triggers such as user instructions, the number of substrate processing operations, the quality of the substrate W, sensor values ​​from each processing module PM1-PM7, or the occurrence of an error. In this case, the control unit CU identifies the processing module that will process the edge ring FR. The third example of the transport method will also be described for the case where the edge ring FR is transported between the ring storage module RSM and processing module PM1. The same method as for processing module PM1 can also be used when the processing module is the other processing modules PM2-PM7.

[0119] The transfer method of the third example includes steps S301 to S312 shown in Fig. 9. Steps S301 to S312 are performed by the control unit CU controlling each part of the substrate processing system PS.

[0120] In step S301, the control unit CU uses the transport robot TR1 to transport the used edge ring FR (edge ​​ring FR with deposits attached) that was placed on the substrate support part 11 of the processing module PM1 and used for substrate processing out of the processing module PM1.

[0121] In step S302, the control unit CU causes the transfer robot TR1 to transfer the used edge ring FR transferred from the processing module PM1 into the temperature adjustment part 61 (for example, the first temperature adjustment device 62) of the ring storage module RSM.

[0122] In step S303, the control unit CU heats and adjusts the temperature of the used edge ring FR that has been carried in by the temperature adjustment unit 61. The temperature adjustment unit 61 can remove the deposits by using well-known methods, such as raising the temperature of the edge ring FR to a temperature at which the deposits can be removed (for example, heating the edge ring FR to approximately 300°C) or supplying a gas (including a temperature adjustment gas) that reacts with the deposits to the temperature adjustment chamber. In addition to the temperature adjustment mechanisms 623 and 633, the temperature adjustment unit 61 may also be configured to supply a purge gas from a purge gas supply unit (not shown) or generate plasma in the temperature adjustment chamber (not shown). This effectively removes the deposits adhering to the edge ring FR. In particular, if the temperature adjustment unit 61 has a gas exhaust configuration, it can smoothly exhaust volatiles from the deposits generated in the temperature adjustment chamber, resulting in an edge ring FR with reduced deposits (hereinafter also referred to as an improved edge ring FR).

[0123] After the deposit removal, the temperature adjustment unit 61 proceeds to a step of adjusting the temperature of the improved edge ring FR as a preliminary process before returning the improved edge ring FR to the processing module PM1. If the temperature of the improved edge ring FR has risen due to the previous deposit removal, the temperature adjustment unit 61 may supply and exhaust a temperature-adjusted gas, such as an inert gas, to the temperature adjustment chamber, or circulate a temperature-adjusted heat exchange medium inside the mounting tables 621 and 631 on which the ring 113 is placed, to promote heat dissipation from the improved edge ring FR. Both may be performed simultaneously. The temperature adjustment unit 61 may also simply stop heating the improved edge ring FR. Alternatively, it may simply supply an inert gas that is not temperature-adjusted to the temperature adjustment chamber. In this case, the target temperature of the improved edge ring FR can be set within a range of 10°C from the temperature of the substrate support part 11 of the processing module into which the ring 113 is to be transported, or within a range of 10°C from the temperature of the heat exchange medium flowing through the flow path of the substrate support part 11 of the processing module into which the ring 113 is to be transported.

[0124] In step S304, the control unit CU uses the transport robot TR1 to remove the improved edge ring FR after temperature adjustment from the temperature adjustment unit 61, place the improved edge ring FR on the stage 73 of the same ring storage module RSM, and align (position) the improved edge ring FR.

[0125] Steps S305 to S312 may be similar to steps S110 to S117 shown in FIG.

[0126] As described above, the transfer method of the third example can improve productivity of substrate processing by adjusting the temperature by removing deposits from the ring 113 (edge ​​ring FR) using the temperature adjustment unit 61. This eliminates the need for the substrate processing system PS to perform processing to remove deposits from the edge ring FR in the processing modules PM1 to PM7. This can prevent contamination (such as scattering of particles) that occurs in the processing modules PM1 to PM7 due to deposit removal, thereby further improving the quality of substrate processing.

[0127] 9 , some steps may be omitted, or other steps may be added. For example, step S304 may be performed between step S301 and step S302. Furthermore, if the edge ring FR is not attracted and held by the electrostatic chuck 112, step S310 may be omitted.

[0128] FIG. 10 is a schematic cross-sectional view showing a plasma processing apparatus 1A according to another embodiment. FIG. 11 is a schematic plan view showing a substrate processing system PS including this plasma processing apparatus 1A. As shown in FIGS. 10 and 11, the substrate processing system PS according to this embodiment differs from the above embodiment in that a separate ring 220 is placed on the substrate support 11 of each of the processing modules PM1 to PM7 (plasma processing apparatus 1A). Other configurations may be similar to those of the plasma processing apparatus 1 shown in FIGS. 2 and 3.

[0129] The plasma processing apparatus 1A has a substrate support 16 in a plasma processing space 10s for supporting a substrate W. The substrate support 16 is supported by a support 17 made of an insulating material such as quartz. The support 17 extends upward from the bottom of the plasma processing chamber 10. The support 17 has a cylindrical shape.

[0130] The substrate support 16 has a first region 161 and a second region 162. The first region 161 supports the substrate W. The first region 161 is a region that is substantially circular in plan view. The first region 161 may include a base 18 and an electrostatic chuck 19. The first region 161 can be configured by a part of the base 18 and a part of the electrostatic chuck 19. The base 18 is made of a conductive material such as aluminum. The base 18 has a substantially disk shape. The base 18 configures a lower electrode.

[0131] The substrate support part 16 includes a main body part 2 and a ring assembly (ring) 220. The main body part 2 includes a base 18 and an electrostatic chuck 19. The main body part 2 includes a substrate support region 2a for supporting the substrate W, an annular region 2b for supporting the ring assembly 220, and a sidewall 2c extending in the vertical direction between the substrate support region 2a and the annular region 2b. The annular region 2b surrounds the substrate support region 2a. The annular region 2b is located lower than the substrate support region 2a. Therefore, the upper end of the sidewall 2c is connected to the substrate support region 2a, and the lower end of the sidewall 2c is connected to the annular region 2b.

[0132] A flow path 18f (support temperature adjustment mechanism 116) is formed within the base 18. The flow path 18f is a flow path through which a heat exchange medium flows. As the heat exchange medium, a liquid refrigerant or a refrigerant (e.g., chlorofluorocarbon) that cools the base 18 by vaporizing the liquid refrigerant is used. A heat exchange medium supply device (e.g., a chiller unit) is connected to the flow path 18f. The supply device is provided outside the plasma processing chamber 10. The heat exchange medium is supplied to the flow path 18f from the supply device. The heat exchange medium supplied to the flow path 18f is returned to the supply device.

[0133] The electrostatic chuck 19 is provided on the base 18. When the substrate W is processed in the plasma processing chamber 10, it is placed on the first region 161 and the electrostatic chuck 19.

[0134] The second region 162 surrounds the first region 161 radially outward. The second region 162 is a region that is substantially annular in plan view. A ring assembly 220 is placed on the second region 162. The second region 162 may include the base 18. The second region 162 may also include the electrostatic chuck 19. The second region 162 may be composed of another part of the base 18 and another part of the electrostatic chuck 19. The substrate W is placed in the region surrounded by the ring assembly 220 and on the electrostatic chuck 19.

[0135] In the second region 162 of the main body 2, a plurality of (e.g., three) through holes 162h are formed, extending in the vertical direction between the annular region 2b and the lower surface 2d of the main body 2. The number of through holes 162h is the same as the number of lift pins 53 of the second lifter 52A, which will be described later.

[0136] The electrostatic chuck 19 has a main body 19m and an electrode 19e provided within the main body 19m. The main body 19m is formed of a dielectric material such as aluminum oxide or aluminum nitride and has a substantially disk shape. The electrode 19e has a film shape. A DC power supply is electrically connected to the electrode 19e via a switch. When a voltage from the DC power supply is applied to the electrode 19e, an electrostatic attractive force is generated between the electrostatic chuck 19 and the substrate W. The generated electrostatic attractive force attracts the substrate W to the electrostatic chuck 19 and the substrate W is held by the electrostatic chuck 19.

[0137] The plasma processing apparatus 1A further includes an outer peripheral member 27. The outer peripheral member 27 extends in the circumferential direction radially outside the substrate support 16 (support 17, base 18, electrostatic chuck 19, and ring assembly 220). The outer peripheral member 27 may be composed of one or more components. The outer peripheral member 27 may be made of an insulating material such as quartz.

[0138] The ring assembly 220 includes a lower ring 221 and an upper ring 222. The lower ring 221 and the upper ring 222 each have an annular shape. The lower ring 221 and the upper ring 222 are each made of a material appropriately selected depending on the plasma processing performed in the plasma processing apparatus 1A. The lower ring 221 and the upper ring 222 are each made of, for example, silicon or silicon carbide.

[0139] The lower ring 221 is disposed on the annular region 2b. The lower ring 221 can be placed on the second region 162 and on the electrostatic chuck 19. The lower ring 221 may also be placed on a component in the second region 162 other than the electrostatic chuck 19.

[0140] The lower surface of the upper ring 222 is generally flat. The lower surface of the upper ring 222 includes tapered surfaces and defines recesses. The lower surface of the upper ring 222 defines a plurality of recesses. The number of tapered surfaces and the number of recesses of the upper ring 222 may be the same as the number of lift pins 53 of the second lifter 52A. Each recess has a size that allows the tip of the second columnar portion 532 of the corresponding lift pin 53 to fit therein. The upper ring 222 is positioned on the lower ring 221 so that each recess is aligned with the corresponding lift pin 53 and the corresponding through-hole 221h.

[0141] The upper ring 222 is accommodated in a recess in the lower ring 221. The lower ring 221 and the upper ring 222 are configured such that, when placed on the annular region 2b, the upper surface of the outer portion of the lower ring 221 and the upper surface of the upper ring 222 are at approximately the same height as the upper surface of the substrate W on the substrate support region 2a. The upper ring 222 has an inner peripheral surface 222a that faces the edge surface of the substrate W on the substrate support region 2a when the lower ring 221 and the upper ring 222 are placed on the annular region 2b.

[0142] The second lifter 52A includes a plurality of lift pins 53 and raises and lowers the lower ring 221 and the upper ring 222. The number of lift pins 53 may be any number (for example, three) that can support and raise and lower the ring assembly 220.

[0143] Each lift pin 53 may be formed of an insulating material. For example, each lift pin 53 may be formed of sapphire, alumina, quartz, silicon nitride, aluminum nitride, or resin. Each lift pin 53 includes a first columnar portion 531 and a second columnar portion 532. The first columnar portion 531 extends in the vertical direction. The first columnar portion 531 has a first upper end surface 531t. The first upper end surface 531t is capable of abutting against the lower surface of the lower ring 221.

[0144] The second columnar portion 532 extends in the vertical direction above the first columnar portion 531. The second columnar portion 532 is narrowed relative to the first columnar portion 531 so as to expose a first upper end surface 531t. The first columnar portion 531 and the second columnar portion 532 each have a cylindrical shape. The diameter of the first columnar portion 531 is larger than the diameter of the second columnar portion 532. The second columnar portion 532 is movable up and down through the through-hole 221h. The vertical length of the second columnar portion 532 is longer than the vertical thickness of the region of the lower ring 221 on which the upper ring 222 is placed.

[0145] The second columnar portion 532 has a second upper end surface 532t. The second upper end surface 532t is capable of abutting against the upper ring 222. The tip of the second columnar portion 532, including the second upper end surface 532t, may be tapered so as to fit into a corresponding recess in the upper ring 222.

[0146] The second columnar portion 532 may include a first portion 532a and a second portion 532b. The first portion 532a is columnar and extends upward from the first columnar portion 531. The second portion 532b is columnar and extends above the first portion 532a. The second portion 532b includes a second upper end surface 532t. The width of the first portion 532a is greater than the width of the second portion 532b.

[0147] The first columnar portion 531, the first portion 532a, and the second portion 532b may each have a cylindrical shape. The diameter of the first columnar portion 531 is larger than the diameter of the first portion 532a, and the diameter of the first portion 532a is larger than the diameter of the second portion 532b.

[0148] The second columnar portion 532 may include a third portion 532c extending between the first portion 532a and the second portion 532b, the third portion 532c having a tapered surface.

[0149] The second lifter 52A includes one or more actuators 522. The one or more actuators 522 are configured to raise and lower the plurality of lift pins 53. Each of the one or more actuators 522 may include, for example, a motor.

[0150] The substrate processing system PS shown in Figure 11 shows a path for replacing a first ring PFR, which corresponds to the upper ring 222 shown in Figure 10. The first ring PFR is stored in a ring storage container CS2 placed on the load port LP4, for example. The first ring PFR stored in the ring storage container CS2 may be new (unused) or may be a used one that is not very worn (hereinafter also referred to as a replacement first ring PFR).

[0151] The control unit CU transports the replacement first ring PFR from the atmospheric transfer module LM to perform replacement, etc. However, before transporting the replacement first ring PFR to the processing module to be replaced among the processing modules PM1 to PM7, the control unit CU transports it into the temperature adjustment unit 61 of the ring storage module RSM. The control unit CU first adjusts the temperature of the replacement first ring PFR in the temperature adjustment unit 61, and then transports the temperature-adjusted replacement first ring PFR to the processing module to be replaced.

[0152] 12 is a flowchart showing a fourth example of the transport method. The following description will be directed to the case where the first ring PFR is transported between the ring storage container CS2 and the processing module PM1. When the processing module to be replaced is one of the other processing modules PM2 to PM7, the same method as when the processing module to be replaced is the processing module PM1 can be used. The fourth example of the transport method is initiated when the control unit CU receives an instruction to replace the first ring PFR.

[0153] The transfer method of the fourth example includes steps S401 to S414 shown in Fig. 12. Steps S401 to S414 are performed by the control unit CU controlling each part of the substrate processing system PS.

[0154] In step S401, the control unit CU causes the transfer robot TR2 of the atmospheric transfer module LM to transfer the replacement first ring PFR stored in the ring storage container CS2 to the aligner AN, and aligns the replacement first ring PFR using the aligner AN. The alignment may include aligning the rotational position of the replacement first ring PFR to a target position. The alignment may include aligning the center position of the replacement first ring PFR to the target position.

[0155] In step S402, the control unit CU transfers the aligned replacement first ring PFR from the aligner AN to the vacuum transfer module TM. Specifically, first, the transfer robot TR2 of the atmospheric transfer module LM transfers the aligned replacement first ring PFR from the aligner AN and into the load lock module LL3, the interior of which has been pressurized to atmospheric pressure. Next, the load lock module LL3 depressurizes the interior. Next, the transfer robot TR1 transfers the replacement first ring PFR from the load lock module LL3. In step S402, load lock modules LL1 and LL2 may be used instead of the load lock module LL3.

[0156] In step S403, the control unit CU causes the transfer robot TR1 to carry the first ring PFR for replacement into the temperature adjustment unit 61 of the ring storage module RSM.

[0157] In step S404, the control unit CU adjusts the temperature of the replacement first ring PFR using the temperature adjustment unit 61. The target temperature during the temperature adjustment is, for example, the same temperature as the temperature of the substrate support 11 (the temperature inside the plasma processing chamber 10) of the processing module PM1 to be replaced. This allows the temperature of the replacement first ring PFR to be appropriately adjusted before being transferred to the processing module PM1.

[0158] In step S405, the control unit CU causes the transfer robot TR1 to carry out the replacement first ring PFR from the temperature adjustment unit 61.

[0159] In step S406, the control unit CU causes the transport robot TR1 to remove the first ring (hereinafter also referred to as the used first ring PFR) that was placed on the substrate support portion 11 of the processing module PM1 and used in substrate processing. At this time, for example, the transport robot TR1 holds the replacement first ring PFR with the upper fork FK1 and holds the used first ring PFR with the lower fork FK2. However, the holding manner by the transport robot TR1 may be reversed.

[0160] In step S407, the control unit CU causes the transfer robot TR1 to load the replacement first ring PFR into the processing module PM1. When the replacement first ring PFR is held by the upper fork FK1 and the used first ring PFR is held by the lower fork FK2, the replacement first ring PFR is positioned higher than the used first ring PFR. Therefore, even if particles or the like adhering to the used first ring PFR fall, they can be prevented from adhering to the replacement first ring PFR.

[0161] In step S408, the control unit CU detects the position of the first replacement ring PFR carried into the processing module PM1 by means of the position detection sensor S1 provided on the upper fork FK1.

[0162] In step S409, the control unit CU determines whether the replacement first ring PFR is misaligned based on the detected position of the replacement first ring PFR. If the control unit CU determines that the replacement first ring PFR is misaligned (step S409: NO), the process proceeds to step S410. If the control unit CU determines that the replacement first ring PFR is not misaligned (step S408: YES), the process proceeds to step S410.

[0163] In step S410, the control unit CU causes the transport robot TR1 to unload the replacement first ring PFR from the processing module PM1. After step S410, the process returns to step S407, where the transport robot TR1 corrects the position of the replacement first ring PFR unloaded from the processing module PM1 in step S407 and loads it into the processing module PM1.

[0164] In step S411, the control unit CU transfers the used first ring PFR, which has been removed from the processing module PM1, from the vacuum transfer module TM to the atmospheric transfer module LM. Specifically, the transfer robot TR1 first transfers the used first ring PFR into the load lock module LL1, the interior of which has been depressurized to a vacuum. Next, the load lock module LL1 increases the internal pressure to atmospheric pressure. Next, the transfer robot TR2 of the atmospheric transfer module LM transfers the used first ring PFR from the load lock module LL1 and transfers the removed used first ring PFR into the ring storage container CS2. In step S411, load lock modules LL2 and LL3 may be used instead of the load lock module LL1.

[0165] In step S412, the control unit CU starts attracting and holding the replacement first ring PFR by the electrostatic chuck 19.

[0166] In step S413, the control unit CU adjusts the temperature of the replacement first ring PFR using the support temperature adjustment mechanism 116 of the substrate support 16. Through the above process flow, the temperature of the replacement first ring PFR has been adjusted in advance by the temperature adjustment unit 61. Therefore, the control unit CU can significantly shorten the period of time required to perform step S413.

[0167] In step S414, the control unit CU ends the sequence of the method for transporting the ring 113. Thereafter, the control unit CU can load the substrate W into the processing module PM1 having the replacement first ring PFR, and perform substrate processing satisfactorily.

[0168] According to the fourth example of the transfer method described above, the temperature of the replacement first ring PFR is adjusted by the temperature adjustment unit 61 before being loaded into the processing module PM1. This allows the substrate processing system PS to shorten the time required to adjust the temperature of the replacement first ring PFR in the processing module PM1. As a result, the substrate processing system PS can quickly start substrate processing using the processing module PM1, thereby improving substrate processing productivity. While the above embodiment has been described with reference to an example in which the first ring PFR is replaced, a similar method may also be used to replace the second ring (lower ring 221) disposed outside the first ring PFR.

[0169] In the fourth example of the transfer method, the order of some of the steps S401 to S414 shown in FIG. 12 may also be changed, some steps may not be performed, or other steps may be added.

[0170] For example, step S406 and step S411 may be performed in parallel while step S404 is being performed. Alternatively, step S406 and step S411 may be performed in parallel while step S401 and step S402 are being performed. Furthermore, for example, when the edge ring FR is not attracted and held by the electrostatic chuck 19, step S412 may be omitted.

[0171] The substrate processing system PS and the transfer method for transferring the first ring PFR may also be modified in various ways. As an example, the substrate processing system PS may include a temperature adjustment unit 61 on the atmospheric transfer module LM side that adjusts the temperature of the replacement first ring PFR. For example, the temperature adjustment unit 61 may be provided in the ring storage container CS2, or the temperature adjustment unit 61 may be provided in the aligner AN. In this case, the transfer method adjusts the temperature of the replacement first ring PFR before transferring it into the vacuum transfer module TM. This further shortens the time required for the temperature adjustment of the replacement first ring PFR by the temperature adjustment unit 61 on the vacuum transfer module TM side. Alternatively, after adjusting the temperature of the replacement first ring PFR by the temperature adjustment unit 61 on the atmospheric transfer module LM side, the substrate processing system PS may directly transfer the replacement first ring PFR to the processing module to be replaced via the load lock modules LL1 to LL3.

[0172] FIG. 13 is a flowchart illustrating a fifth example of a transfer method. In the third example of the transfer method, a first ring PFR used in the process modules PM1-PM7 of the substrate processing system PS is de-deposited by the temperature adjustment unit 61, and then returned to the process modules PM1-PM7 as a first ring PFR with no deposits (hereinafter also referred to as an improved first ring PFR). The control unit CU initiates the fifth example of the transfer method based on triggers such as user instructions, the number of substrate processing operations, the quality of the substrate W, sensor values ​​from each process module PM1-PM7, or the occurrence of an error. The fifth example of the transfer method will also be described for the case where the first ring PFR is transferred between the ring storage module RSM and the process module PM1. The same method as for the process module PM1 can also be used when the process modules are the other process modules PM2-PM7.

[0173] The transfer method of the fifth example includes steps S501 to S512 shown in Fig. 13. Steps S501 to S512 are performed by the control unit CU controlling each part of the substrate processing system PS.

[0174] In step S501, the control unit CU uses the transport robot TR1 to transport the used first ring PFR (first ring PFR with deposits attached) that was placed on the substrate support part 11 of the processing module PM1 and used for substrate processing out of the processing module PM1.

[0175] In step S502, the control unit CU causes the transport robot TR1 to transport the used first ring PFR removed from the processing module PM1 into the temperature adjustment unit 61 (for example, the first temperature adjustment device 62) of the ring storage module RSM.

[0176] In step S503, the control unit CU removes deposits from the transported used first ring PFR and adjusts the temperature using the temperature adjustment unit 61. This effectively removes deposits adhering to the used first ring PFR, resulting in an improved first ring PFR.

[0177] After the deposits are removed, the temperature adjustment unit 61 proceeds to a step of adjusting the temperature of the improved first ring PFR as a preliminary process before returning the improved first ring PFR to the processing module PM1, thereby adjusting the temperature of the improved first ring PFR to approximately the same temperature as the substrate support unit 11 of the processing module PM1.

[0178] In step S504, the control unit CU uses the transport robot TR1 to remove the improved first ring PFR after temperature adjustment from the temperature adjustment unit 61, place the improved first ring PFR on the stage 73 of the same ring storage module RSM, and align (position) the improved first ring PFR.

[0179] Steps S505 to S512 may be similar to steps S110 to S117 shown in FIG.

[0180] As described above, the transfer method of the fifth example can improve productivity of substrate processing by adjusting the temperature by removing deposits from the first ring PFR using the temperature adjustment unit 61. This eliminates the need for the substrate processing system PS to perform processing to remove deposits from the first ring PFR in the processing modules PM1 to PM7. This can prevent contamination (such as scattering of particles) that occurs in the processing modules PM1 to PM7 due to deposit removal, thereby further improving the quality of substrate processing.

[0181] 13 , some steps may be omitted, or other steps may be added. For example, step S504 may be performed between step S501 and step S502. Furthermore, if the edge ring FR is not attracted and held by the electrostatic chuck 112, step S510 may be omitted.

[0182] The above-disclosed embodiments include, for example, the following aspects.

[0183] (Supplementary Note 1) A substrate processing system including: a processing module having a processing chamber, and a substrate support part including a substrate support surface and a ring support surface that is provided in the processing chamber to surround the substrate support surface and that supports a ring, a vacuum transfer module connected to the processing module and having a transfer robot that transfers the ring, a temperature adjustment part that can adjust the temperature of the ring, and a control part, wherein the control part performs the following steps in this order: adjusting the temperature of the ring using the temperature adjustment part before carrying the ring into the processing module, and transporting the ring that has been temperature adjusted by the temperature adjustment part using the transfer robot and placing it on the substrate support part. (Supplementary Note 2) The substrate processing system according to Supplementary Note 1 or 2, wherein the ring is a replacement ring, and the control part performs the step of unloading the used ring supported on the substrate support part before carrying the replacement ring into the processing module. (Supplementary Note 3) The substrate processing system according to Supplementary Note 2, wherein the control unit unloads the used ring from the processing module while the temperature adjustment unit is adjusting the temperature of the replacement ring. (Supplementary Note 4) The substrate processing system according to any one of Supplementary Notes 1 to 4, wherein the rings include a first ring provided on the ring support surface and a second ring surrounding the first ring and overlapping the first ring below in a plan view, and the step of adjusting the temperature of the rings includes adjusting the temperature of the replacement first ring, and transporting the temperature-adjusted replacement first ring by the transport robot and placing it on the substrate support unit. (Supplementary Note 5) The substrate processing system according to any one of Supplementary Notes 1 to 5, wherein the rings include a first ring provided on the ring support surface and a second ring surrounding the first ring and overlapping the first ring below in a plan view, and the step of adjusting the temperature of the rings includes adjusting the temperature of a replacement first ring and a replacement second ring, and transporting the temperature-adjusted replacement first ring and replacement second ring by the transport robot and placing them on the substrate support part.(Supplementary Note 6) The substrate processing system according to Supplementary Note 4, wherein the controller comprises a step of unloading the used first ring supported on the substrate support part before loading the replacement first ring into the processing module. (Supplementary Note 7) The substrate processing system according to Supplementary Note 6, wherein the controller unloads the used first ring from the processing module while the temperature adjustment part is adjusting the temperature of the replacement first ring. (Supplementary Note 8) The substrate processing system according to Supplementary Note 5, wherein the controller comprises a step of unloading the used first ring and the second ring supported on the substrate support part before loading the replacement first ring and the replacement second ring into the processing module. (Supplementary Note 9) The substrate processing system of Supplementary Note 8, wherein the step of unloading the used first ring and the second ring includes unloading the used first ring and then unloading the used second ring, and the step of loading the first ring and the second ring includes loading a replacement second ring and then loading the replacement second ring. (Supplementary Note 10) The substrate processing system of Supplementary Note 5, wherein the control unit unloads the used first ring and the used second ring of the processing module while the temperature adjustment unit is adjusting the temperature of the replacement first ring and the replacement second ring. (Supplementary Note 11) The substrate processing system of Supplementary Note 5, wherein the temperature adjustment unit is capable of simultaneously adjusting the temperature of each of the first ring and the second ring. (Supplementary Note 12) The substrate processing system according to Supplementary Note 11, wherein the temperature adjustment unit includes a first temperature adjustment device capable of adjusting the temperature of the first ring, and a second temperature adjustment device capable of adjusting the temperature of the first ring. (Supplementary Note 13) The substrate processing system according to any one of Supplements 1 to 12, further including a ring storage module connected to the vacuum transfer module and capable of storing a plurality of the rings, wherein the temperature adjustment unit is provided in the ring storage module. (Supplementary Note 14) The substrate processing system according to Supplementary Note 13, wherein the ring storage module has the temperature adjustment unit, a basket for storing a plurality of the rings, and an alignment device for aligning the rings, arranged side by side.(Supplementary Note 15) The substrate processing system according to Supplementary Note 14, wherein the control unit performs the steps of using the transport robot to remove the ring stored in the basket and carry it into the temperature adjustment unit, adjusting the temperature of the ring by the temperature adjustment unit, and carrying the temperature-adjusted ring into the alignment device to perform the alignment, in this order. (Supplementary Note 16) The substrate processing system according to any one of Supplements 1 to 15, wherein the temperature adjustment unit adjusts the temperature of the ring to a temperature within a range of 10°C from a temperature of the substrate support unit of the processing module into which the ring is to be carried. (Supplementary Note 17) The substrate processing system according to any one of Supplementary Notes 1 to 16, wherein the temperature adjustment unit adjusts the temperature of the ring to a temperature within a range of 10°C from a temperature of a heat exchange medium circulating through a flow path of the substrate support unit of the processing module into which the ring is to be carried. (Supplementary Note 18) The substrate processing system according to any one of Supplements 1 to 17, wherein the temperature adjustment unit has a temperature adjustment chamber that stores one of the rings, and a housing unit that closes the temperature adjustment chamber and is able to adjust the temperature of the ring. (Supplementary Note 19) The substrate processing system according to any one of Supplements 1 to 18, wherein the transport robot has a position detection sensor that detects the position of the ring placed on the substrate support unit, and the control unit determines whether the ring detected by the position detection sensor is misaligned, and adjusts the position of the ring if there is a positional misalignment of the ring. (Supplementary Note 20) The substrate processing system according to any one of Supplements 1 to 19, wherein the control unit performs the steps of carrying the used ring that has been carried out into the temperature adjustment unit, removing any deposits from the ring while adjusting the temperature of the used ring with the temperature adjustment unit, and carrying the ring from which the deposits have been removed into the processing module, in this order. (Appendix 21) The substrate processing system described in any one of Appendices 1 to 19, wherein the control unit performs the following steps in this order: transporting the used ring that has been removed into the temperature adjustment unit; removing any attached material from the used ring using the temperature adjustment unit, and then adjusting the temperature of the ring; and transporting the ring from which the attached material has been removed into the processing module.(Supplementary Note 22) A substrate processing system as described in any one of Supplementary Notes 1 to 21, further comprising: a load lock module connected to the vacuum transfer module; an atmospheric transfer module connected to the vacuum transfer module via the load lock module; a load port connected to the atmospheric transfer module; and a ring storage container placed on the load port, wherein the ring is a replacement ring, and when transferring the replacement ring stored in the ring storage container from the atmospheric transfer module to the processing module, the control unit performs the following steps in this order: carrying the replacement ring into the temperature adjustment unit; adjusting the temperature of the replacement ring using the temperature adjustment unit; and transporting the replacement ring after temperature adjustment using the temperature adjustment unit and carrying it into the processing module. (Supplementary Note 23) The substrate processing system according to Supplementary Note 22, wherein the rings include a first ring arranged to surround the substrate support surface, and a second ring arranged to surround the first ring and overlap the first ring below in a plan view, and wherein the step of adjusting the temperature of the rings includes adjusting the temperature of a replacement first ring, and transporting the temperature-adjusted replacement first ring by the transport robot and placing it on the substrate support part. (Supplementary Note 24) The substrate processing system according to Supplementary Note 23, wherein the controller includes a step of unloading the used first ring supported on the substrate support part before loading the replacement first ring. (Supplementary Note 25) The substrate processing system according to Supplementary Note 24, wherein the controller unloads the used first ring from the processing module while the temperature adjustment part is adjusting the temperature of the replacement first ring.(Supplementary Note 26) A substrate processing system including: a processing module having a processing chamber; a substrate support portion including a substrate support surface and a ring support surface that is arranged in the processing chamber to surround the substrate support surface and that supports a ring; a vacuum transfer module connected to the processing module and having a transfer robot that transfers the ring; a temperature adjustment portion that can adjust the temperature of the ring; and a control portion, wherein the control portion performs, in this order: a step of adjusting the temperature of the ring using the temperature adjustment portion before placing the ring on the ring support surface; and a step of transporting the ring that has been temperature adjusted by the temperature adjustment portion using the transfer robot and placing it on the substrate support portion. (Supplementary Note 27) A transfer method for loading the ring into a processing module having a processing chamber and a substrate support part including a substrate support surface and a ring support surface that is arranged in the processing chamber to surround the substrate support surface and supports the ring, the transfer method comprising the steps of: loading the ring into a temperature adjustment part connected to the vacuum transfer module by a transfer robot of the vacuum transfer module connected to the processing module; adjusting the temperature of the ring by the temperature adjustment part; and transporting the ring that has been temperature adjusted by the temperature adjustment part by the transfer robot and placing it on the substrate support part.

[0184] The present invention is not limited to the configurations described in the above embodiments, and may be combined with other elements. These aspects can be modified without departing from the spirit of the present invention and can be appropriately determined depending on the application form. Furthermore, the matters described in the multiple embodiments can be configured in other ways as long as they are not inconsistent, and can be combined as long as they are not inconsistent.

[0185] For example, although the above embodiment has been described using a capacitively coupled plasma device as an example, the present invention is not limited thereto and may be applied to other plasma devices. For example, an inductively coupled plasma (ICP) device may be used instead of the capacitively coupled plasma device. In this case, the inductively coupled plasma device includes an antenna and a lower electrode. The lower electrode is disposed within the substrate support, and the antenna is disposed at the top or upper part of the chamber. An RF generator is coupled to the antenna, and a DC generator is coupled to the lower electrode. Therefore, the RF generator is coupled to the upper electrode of the capacitively coupled plasma device or the antenna of the inductively coupled plasma device. That is, the RF generator is coupled to the plasma processing chamber 10.

[0186] This application claims priority from basic application No. 2022-162608, filed on October 7, 2022, with the Japan Patent Office, the entire contents of which are incorporated herein by reference.

[0187] 11, 16 Substrate support unit 61 Temperature adjustment unit 113, 220 Ring CU Control unit PM1 to PM7 Processing module PS Substrate processing system TM Vacuum transfer module TR1, TR2 Transfer robot W Substrate

Claims

1. a processing module including a processing chamber and a substrate support including a substrate support surface and a ring support surface surrounding the substrate support surface and supporting a ring within the processing chamber; a vacuum transfer module connected to the processing module and having a transfer robot for transferring the ring; A temperature adjustment unit capable of adjusting the temperature of the ring; A control unit, a ring storage module connected to the vacuum transfer module and capable of storing a plurality of the rings; The temperature adjustment unit is provided in the ring storage module, The control unit is adjusting the temperature of the ring by the temperature adjustment unit before carrying the ring into the processing module; a step of transporting the ring, the temperature of which has been adjusted by the temperature adjustment unit, by the transport robot and placing the ring on the substrate support unit; Substrate processing system.

2. A processing module having a processing chamber, and a substrate support portion including a substrate support surface and a ring support surface surrounding the substrate support surface within the processing chamber and supporting a ring; a vacuum transfer module connected to the processing module and having a transfer robot for transferring the ring; A temperature adjustment unit capable of adjusting the temperature of the ring; A control unit, the temperature adjustment unit is connected to the vacuum transfer module; The control unit is adjusting the temperature of the ring by the temperature adjustment unit before carrying the ring into the processing module; a step of transporting the ring, the temperature of which has been adjusted by the temperature adjustment unit, by the transport robot and placing the ring on the substrate support unit; Substrate processing system.

3. the ring is a replacement ring, the control unit includes a step of removing the used ring supported on the substrate support before carrying the replacement ring into the processing module. The substrate processing system according to claim 1 .

4. The control unit carries out the used ring of the processing module while the temperature adjustment unit is adjusting the temperature of the replacement ring. The substrate processing system of claim 3 .

5. The rings include a first ring provided on the ring support surface, and a second ring provided to surround the first ring and overlap the first ring below in a plan view, the step of adjusting the temperature of the ring includes adjusting the temperature of the first ring for replacement, and transporting the temperature-adjusted first ring for replacement by the transport robot and placing it on the substrate support; The substrate processing system according to claim 1 .

6. The rings include a first ring provided on the ring support surface, and a second ring provided to surround the first ring and overlap the first ring below in a plan view, the step of adjusting the temperature of the rings includes adjusting the temperature of the first replacement ring and the second replacement ring, and transporting the temperature-adjusted first replacement ring and the second replacement ring by the transport robot and placing them on the substrate support; The substrate processing system according to claim 1 .

7. the control unit includes a step of unloading the used first ring supported on the substrate support before loading the replacement first ring into the processing module. The substrate processing system of claim 5 .

8. the control unit carries out the used first ring of the processing module while the temperature adjustment unit adjusts the temperature of the replacement first ring. The substrate processing system of claim 7 .

9. the control unit includes a step of unloading the used first ring and the used second ring supported on the substrate support before loading the replacement first ring and the replacement second ring into the processing module. The substrate processing system of claim 6 .

10. the step of removing the first ring and the second ring after use includes removing the second ring after use of the first ring; the step of transporting the first ring and the second ring includes transporting a replacement second ring, and then transporting a replacement second ring; The substrate processing system of claim 9 .

11. the control unit transports out the used first ring and the used second ring from the processing module while the temperature adjustment unit is adjusting the temperature of the replacement first ring and the replacement second ring. The substrate processing system of claim 6 .

12. The temperature adjustment unit is capable of simultaneously adjusting the temperatures of the first ring and the second ring. The substrate processing system of claim 6 .

13. The temperature adjustment unit includes a first temperature adjustment device capable of adjusting a temperature of the first ring and a second temperature adjustment device capable of adjusting a temperature of the second ring. The substrate processing system of claim 12.

14. The ring storage module includes the temperature adjustment unit, a basket for storing a plurality of the rings, and an alignment device for aligning the rings, which are arranged side by side. The substrate processing system of claim 1 .

15. the control unit performs the steps of, in this order, taking out the ring stored in the basket by the transport robot and carrying it into the temperature adjustment unit, adjusting the temperature of the ring by the temperature adjustment unit, and carrying the ring after temperature adjustment into the alignment device and performing the alignment. The substrate processing system of claim 14.

16. the temperature adjustment unit adjusts the temperature of the ring to a temperature within a range of 10° C. from a temperature of the substrate support unit of the processing module into which the ring is to be carried; The substrate processing system according to claim 1 .

17. the temperature adjustment unit adjusts the temperature of the ring to a temperature within a range of 10° C. from a temperature of a heat exchange medium flowing through a flow path of the substrate support unit of the processing module into which the ring is to be carried. The substrate processing system according to claim 1 .

18. the temperature adjustment unit has a temperature adjustment chamber that houses one of the rings, and a housing unit that closes the temperature adjustment chamber and is capable of adjusting the temperature of the ring; The substrate processing system according to claim 1 .

19. the transfer robot has a position detection sensor that detects a position of the ring placed on the substrate support part, The control unit determines whether or not there is a positional deviation of the ring detected by the position detection sensor, and adjusts the position of the ring when there is a positional deviation of the ring. The substrate processing system according to claim 1 .

20. the control unit performs the steps of: carrying the used ring that has been removed into the temperature adjustment unit; removing any deposits from the used ring while controlling the temperature of the used ring by the temperature adjustment unit; and carrying the ring from which the deposits have been removed into the processing module, in this order. The substrate processing system according to claim 1 .

21. the control unit performs the steps of: carrying the used ring that has been removed into the temperature adjustment unit; removing any attached matter from the used ring by the temperature adjustment unit, and then adjusting the temperature of the ring; and carrying the ring from which the attached matter has been removed into the processing module, in this order. The substrate processing system according to claim 1 .

22. a load lock module connected to the vacuum transfer module; an atmospheric transfer module connected to the vacuum transfer module via the load lock module; A load port connected to the atmospheric transfer module; a ring storage container placed on the load port, the ring is a replacement ring, when transferring the replacement ring stored in the ring storage container from the atmospheric transfer module to the processing module, the control unit performs the steps of, in this order, transferring the replacement ring into the temperature adjustment unit, adjusting the temperature of the replacement ring by the temperature adjustment unit, and transferring the replacement ring whose temperature has been adjusted by the temperature adjustment unit and transferring it into the processing module. The substrate processing system according to claim 1 .

23. the rings include a first ring provided to surround the substrate support surface, and a second ring provided to surround the first ring and overlap the first ring below in a plan view; the step of adjusting the temperature of the ring includes adjusting the temperature of the first ring for replacement, and transporting the temperature-adjusted first ring for replacement by the transport robot and placing it on the substrate support; 23. The substrate processing system of claim 22.

24. the control unit includes a step of unloading the used first ring supported by the substrate support unit before loading the replacement first ring.

24. The substrate processing system of claim 23.

25. The control unit carries out the used first ring of the processing module while the temperature adjustment unit adjusts the temperature of the replacement first ring.

25. The substrate processing system of claim 24.

26. A process module having a process chamber, and a substrate support including a substrate support surface within the process chamber and a ring support surface surrounding the substrate support surface and supporting a ring; a vacuum transfer module connected to the processing module and having a transfer robot for transferring the ring; A temperature adjustment unit capable of adjusting the temperature of the ring; A control unit, the temperature adjustment unit has a first temperature adjustment device capable of adjusting a temperature of a first ring and a second temperature adjustment device capable of adjusting a temperature of a second ring, and is capable of simultaneously adjusting the temperatures of the first ring and the second ring; The control unit is adjusting the temperature of the ring by the temperature adjustment unit before carrying the ring into the processing module; a step of transporting the ring, the temperature of which has been adjusted by the temperature adjustment unit, by the transport robot and placing the ring on the substrate support unit; Substrate processing system.

27. A process module having a process chamber, and a substrate support including a substrate support surface within the process chamber and a ring support surface surrounding the substrate support surface and supporting a ring; a vacuum transfer module connected to the processing module and having a transfer robot for transferring the ring; A temperature adjustment unit capable of adjusting the temperature of the ring; A control unit, the temperature adjustment unit has a temperature adjustment chamber that houses one of the rings, and a housing that closes the temperature adjustment chamber and is capable of adjusting the temperature of the ring; The control unit is adjusting the temperature of the ring by the temperature adjustment unit before carrying the ring into the processing module; a step of transporting the ring, the temperature of which has been adjusted by the temperature adjustment unit, by the transport robot and placing the ring on the substrate support unit; Substrate processing system.

28. A process module having a process chamber, and a substrate support including a substrate support surface within the process chamber and a ring support surface surrounding the substrate support surface and supporting a ring; a vacuum transfer module connected to the processing module and having a transfer robot for transferring the ring; A temperature adjustment unit capable of adjusting the temperature of the ring; A control unit, The control unit is carrying the used ring that has been carried out into the temperature adjustment unit before carrying the ring into the processing module; removing deposits from the used ring while controlling the temperature of the used ring by the temperature control unit; a step of transporting the ring from which the deposits have been removed by the temperature adjustment unit, by the transport robot, into the processing module, and placing the ring on the substrate support unit; Substrate processing system.

29. 1. A method for loading a ring into a processing module having a processing chamber and a substrate support including a substrate support surface and a ring support surface that is provided in the processing chamber and surrounds the substrate support surface and supports a ring, the method comprising the steps of: carrying the ring into a temperature adjustment unit connected to the vacuum transfer module by a transfer robot of the vacuum transfer module connected to the processing module; adjusting the temperature of the ring by the temperature adjustment unit; a step of transporting the ring, the temperature of which has been adjusted by the temperature adjustment unit, by the transport robot and placing the ring on the substrate support unit; Transportation method.