Power divider, power divider assembly, and manufacturing method for antenna

Abstract

A power divider, a power divider assembly, and a manufacturing method for an antenna. The power divider comprises a dielectric plate, a conductive layer and a grounding conductive plate, wherein the conductive layer is located on one side of a dielectric layer; the grounding conductive plate and the conductive layer are spaced apart from each other; and the conductive layer comprises an input micro-strip line and at least one stage of power division unit that is connected to the input micro-strip line. Each power division unit comprises a first transmission micro-strip line and a second transmission micro-strip line, and each power division unit further comprises a groove that is located in the dielectric plate and a resistance material block that is located in the groove, wherein an output end of the first transmission micro-strip line that is away from the input micro-strip line and an output end of the second transmission micro-strip line that is is away from the input micro-strip line are electrically connected to the resistance material block. Thus, the power divider can reduce the complexity and the manufacturing cost of a manufacturing process.

Description

Power divider, power divider assembly and antenna manufacturing method

[0001] This application claims priority to Chinese Patent Application No. 202310745300.1 filed on June 21, 2023. The contents of the above-mentioned Chinese patent application disclosure are hereby incorporated by reference in their entirety as a part of this application. Technical Field

[0002] Embodiments of the present disclosure relate to a method for manufacturing a power divider, a power divider assembly, and an antenna. Background Art

[0003] Microwave passive components play an indispensable role in wireless communications technology, and power dividers (also known as power dividers) are a crucial component among these components. Power dividers play a crucial role in active amplifier circuits, antenna systems, radar systems, and military defense technologies.

[0004] Power dividers can split input power into two or more paths according to a specific ratio. Conversely, they can also function as power combiners. They are widely used in microwave systems and play an important role. Key technical parameters for power dividers include operating bandwidth, input port return loss, insertion loss, and isolation between output ports. The Wilkinson power divider is one of the more commonly used power dividers. It offers advantages such as a relatively simple structure, high isolation, and the ability to simultaneously match all ports, making it widely used in microwave circuits.

[0005] Summary of the Invention

[0006] The embodiments of the present disclosure provide a method for manufacturing a power divider, a power divider assembly, and an antenna. The power divider can be fabricated by forming a groove on a dielectric plate and disposing a resistive material in the groove, and by electrically connecting the output end of the first transmission microstrip line away from the input microstrip line and the output end of the second transmission microstrip line away from the input microstrip line to a resistive material block to achieve an isolation resistor between the output end of the first transmission microstrip line and the output end of the second transmission microstrip line away from the input microstrip line, thereby eliminating the need for a welding process. As a result, the power divider can greatly reduce the complexity of the manufacturing process and reduce the manufacturing cost. On the other hand, since the resistive material block is disposed in the groove of the dielectric plate, the power divider can also make the dielectric plate provided with the resistive material block have a flat structure, thereby improving the flatness of the power divider, thereby facilitating integration into other devices, reducing the volume of the device, and improving the compactness of the device.

[0007] At least one embodiment of the present disclosure provides a power divider, comprising: a dielectric plate; a conductive layer located on one side of the dielectric layer; and a grounded conductive plate spaced apart from the conductive layer, wherein the conductive layer comprises an input microstrip line and at least one power divider unit connected to the input microstrip line, each of the power divider units comprising a first transmission microstrip line and a second transmission microstrip line, each of the power divider units further comprising a groove located in the dielectric plate and a resistive material block located in the groove, wherein an output end of the first transmission microstrip line away from the input microstrip line and an output end of the second transmission microstrip line away from the input microstrip line are electrically connected to the resistive material block.

[0008] For example, in the power divider provided in an embodiment of the present disclosure, the height difference between the surface of the resistive material block away from the bottom of the groove and the surface of the dielectric plate is less than 1 / 10 of the thickness of the first transmission microstrip line or the second transmission microstrip line.

[0009] For example, in the power divider provided by an embodiment of the present disclosure, the surface of the resistive material block away from the bottom of the groove is flush with the surface of the dielectric plate.

[0010] For example, in the power divider provided in an embodiment of the present disclosure, the material of the resistance material block is selected from one or more of ceramic materials, semiconductor materials and metal oxide materials.

[0011] For example, in the power divider provided in an embodiment of the present disclosure, the resistance material block includes a plurality of first sub-resistance material blocks connected to each other, and the materials of different first sub-resistance material blocks are different.

[0012] For example, in the power divider provided in an embodiment of the present disclosure, the input microstrip line and the at least one first-stage power dividing unit are arranged along a first direction, and the plurality of first sub-resistance material blocks are arranged along the first direction.

[0013] For example, in the power divider provided by an embodiment of the present disclosure, the resistivity of the plurality of first sub-resistance material blocks gradually decreases along the first direction.

[0014] For example, in the power divider provided in an embodiment of the present disclosure, the groove includes a plurality of sub-grooves that are interconnected, and the depths of different sub-grooves are different.

[0015] For example, in the power divider provided in an embodiment of the present disclosure, the resistance material block includes a plurality of second sub-resistance material blocks corresponding one-to-one to the plurality of sub-grooves, and the surfaces of the plurality of second sub-resistance material blocks away from the bottom of the grooves are flush.

[0016] For example, in the power divider provided in an embodiment of the present disclosure, the input microstrip line and the at least one power dividing unit are arranged along a first direction, and the multiple sub-grooves are arranged along the first direction.

[0017] For example, in the power divider provided in one embodiment of the present disclosure, the at least one level of power divider unit includes N levels of power divider units arranged in series, the first transmission microstrip line of the power divider unit of the latter level is electrically connected to the output end of the first transmission microstrip line of the power divider unit of the previous level, and the second transmission microstrip line of the power divider unit of the latter level is electrically connected to the output end of the second transmission microstrip line of the power divider unit of the previous level, and N is a positive integer greater than or equal to 2.

[0018] For example, in the power divider provided in one embodiment of the present disclosure, the line width of the first transmission microstrip line of the power divider unit of the latter stage is greater than the line width of the first transmission microstrip line of the power divider unit of the previous stage, and the line width of the second transmission microstrip line of the power divider unit of the latter stage is greater than the line width of the second transmission microstrip line of the power divider unit of the previous stage.

[0019] For example, in the power divider provided in an embodiment of the present disclosure, in each of the power dividing units, the first transmission microstrip line includes a plurality of first U-shaped bends, and the second transmission microstrip line includes a plurality of second U-shaped bends.

[0020] For example, in the power divider provided in an embodiment of the present disclosure, the number of the first U-shaped bend portions included in the first transmission microstrip line in at least one of the power dividers is different from the number of the first U-shaped bend portions included in the first transmission microstrip line in other power dividers.

[0021] For example, in the power divider provided in one embodiment of the present disclosure, the corners of the first U-shaped bend portion include rounded corners, folded corners or right angles, and the corners of the second U-shaped bend portion include rounded corners, folded corners or right angles.

[0022] For example, in the power divider provided in an embodiment of the present disclosure, in each of the power dividing units, the line width of the first transmission microstrip line is not equal to the line width of the second transmission microstrip line.

[0023] For example, in the power divider provided in an embodiment of the present disclosure, the grounded conductive plate is located on a side of the conductive layer away from the dielectric plate, and the power divider further includes an air gap layer located between the grounded conductive plate and the conductive layer.

[0024] For example, in the power divider provided in an embodiment of the present disclosure, the thickness of the air gap layer ranges from 0.20 to 2.00 mm.

[0025] For example, in the power divider provided in an embodiment of the present disclosure, the grounded conductive plate is located on a side of the dielectric plate away from the conductive layer, and the grounded conductive plate is arranged in contact with the dielectric plate.

[0026] At least one embodiment of the present disclosure further provides a power divider assembly, comprising a plurality of power divider groups arranged in series, each of the power divider groups comprising at least one of the above-mentioned power dividers.

[0027] For example, in the power divider assembly provided in one embodiment of the present disclosure, the number of the power dividers in the latter power divider group is twice the number of the power dividers in the former power divider group, and the input end of the power divider in the latter power divider group is connected to the output end of the first transmission microstrip line or the output end of the second transmission microstrip line of one of the power dividers in the former power divider group.

[0028] At least one embodiment of the present disclosure further provides a method for manufacturing an antenna, wherein the antenna includes the power divider according to any one of the above items, and the manufacturing method includes: forming the groove on the dielectric plate; forming the resistance material block in the groove; forming the conductive layer on the dielectric plate on which the resistance material block is formed, and electrically connecting the output end of the first transmission microstrip line and the output end of the second transmission microstrip line to the resistance material block; and combining the grounded conductive plate with the dielectric plate on which the conductive layer is formed, so that the conductive layer and the grounded conductive plate are spaced apart.

[0029] For example, in the antenna manufacturing method provided in one embodiment of the present disclosure, the antenna also includes a functional device, the functional device includes a semiconductor layer, and forming the resistance material block in the groove includes: using the same material layer to form the resistance material block and the semiconductor layer of the functional device in the groove through the same patterning process. BRIEF DESCRIPTION OF THE DRAWINGS

[0030] In order to more clearly illustrate the technical solutions of the embodiments of the present disclosure, the drawings of the embodiments will be briefly introduced below. Obviously, the drawings in the following description only relate to some embodiments of the present disclosure, rather than limiting the present disclosure.

[0031] FIG1 is a schematic structural diagram of a power divider provided by an embodiment of the present disclosure;

[0032] FIG2 is a cross-sectional schematic diagram of a power divider provided in one embodiment of the present disclosure;

[0033] FIG3 is a curve showing a change in S11 parameter of a power divider as a function of frequency provided by an embodiment of the present disclosure;

[0034] FIG4 is a curve showing the change of isolation of a power divider as a function of frequency provided by an embodiment of the present disclosure;

[0035] FIG5 is a schematic structural diagram of another power divider provided by an embodiment of the present disclosure;

[0036] FIG6 is a cross-sectional schematic diagram of another power divider provided by an embodiment of the present disclosure;

[0037] FIG7 is a schematic structural diagram of another power divider provided in an embodiment of the present disclosure;

[0038] FIG8 is a cross-sectional schematic diagram of another power divider provided by an embodiment of the present disclosure;

[0039] FIG9 is a schematic structural diagram of another power divider provided by an embodiment of the present disclosure;

[0040] FIG10 is a schematic structural diagram of another power divider provided in one embodiment of the present disclosure;

[0041] FIG11 is a schematic structural diagram of another power divider provided in an embodiment of the present disclosure;

[0042] FIG12 is a schematic structural diagram of another power divider provided in one embodiment of the present disclosure;

[0043] FIG13 is a schematic structural diagram of another power divider provided in one embodiment of the present disclosure;

[0044] FIG14 is a schematic structural diagram of another power divider provided in one embodiment of the present disclosure;

[0045] FIG15 is a schematic structural diagram of another power divider provided in one embodiment of the present disclosure;

[0046] FIG16 is a cross-sectional schematic diagram of another power divider provided in one embodiment of the present disclosure;

[0047] FIG17 is a schematic structural diagram of another power divider provided in one embodiment of the present disclosure;

[0048] FIG18 is a cross-sectional schematic diagram of another power divider provided by an embodiment of the present disclosure; and

[0049] FIG19 is a schematic diagram of a power divider assembly provided in accordance with an embodiment of the present disclosure. DETAILED DESCRIPTION

[0050] To make the purpose, technical solutions, and advantages of the embodiments of the present disclosure more clear, the technical solutions of the embodiments of the present disclosure will be clearly and completely described below in conjunction with the accompanying drawings of the embodiments of the present disclosure. Obviously, the described embodiments are part of the embodiments of the present disclosure, not all of the embodiments. Based on the described embodiments of the present disclosure, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present disclosure.

[0051] Unless otherwise defined, the technical or scientific terms used in this disclosure should have the usual meanings understood by people with ordinary skills in the field to which this disclosure belongs. The words "first", "second" and similar words used in this disclosure do not indicate any order, quantity or importance, but are only used to distinguish different components. Words such as "include" or "comprise" mean that the elements or objects appearing before the word include the elements or objects listed after the word and their equivalents, without excluding other elements or objects. "Up", "down", "left", "right" and the like are only used to indicate relative positional relationships. When the absolute position of the object being described changes, the relative positional relationship may also change accordingly.

[0052] With the rapid development of industries such as 5G communications and the Internet of Things, microwave frequencies are gradually moving toward higher frequencies. Higher frequencies correspond to shorter wavelengths. Microwave device size is positively correlated with wavelength, leading to the development of compact microwave devices as a research hotspot. Traditional design methods and approaches for power dividers are no longer fully capable of meeting the high demands of future microwave communications. Therefore, the exploration and research of compact, ultra-wideband power dividers holds significant scientific and practical significance.

[0053] The transmission structure between the input and output of a typical Wilkinson power splitter is a quarter-wavelength impedance transformation line, and an isolation resistor is also provided between the output terminals, whose resistance value can be calculated. However, the isolation resistor of a typical power splitter must be installed by welding, which makes the manufacturing process of the power splitter more complicated and expensive. On the other hand, the quarter-wavelength impedance transformation line cannot meet the requirements of miniaturization of the power splitter.

[0054] To this end, embodiments of the present disclosure provide a method for manufacturing a power divider, a power divider assembly, and an antenna. The power divider includes a dielectric plate, a conductive layer, and a grounded conductive plate; the conductive layer is located on one side of the dielectric layer; the grounded conductive plate is spaced apart from the conductive layer; the conductive layer includes at least one power divider unit connected to an input microstrip line, each power divider unit including a first transmission microstrip line and a second transmission microstrip line. Each power divider unit also includes a groove in the dielectric plate and a resistive material block in the groove. The output end of the first transmission microstrip line away from the input microstrip line and the output end of the second transmission microstrip line away from the input microstrip line are electrically connected to the resistive material block. The power divider can provide an isolation resistor between the output end of the first transmission microstrip line and the output end of the second transmission microstrip line away from the input microstrip line by forming a groove in the dielectric plate and disposing a resistive material in the groove. The isolation resistor is electrically connected to the resistive material block, thereby eliminating the need for soldering. Consequently, the power divider can significantly reduce the complexity of the manufacturing process and reduce manufacturing costs. On the other hand, since the resistance material block is arranged in the groove of the dielectric plate, the power divider can also make the dielectric plate provided with the resistance material block have a flat structure, thereby improving the flatness of the power divider, thereby facilitating integration into other devices, reducing the volume of the device and improving the compactness of the device.

[0055] Hereinafter, the power divider, the power divider assembly and the manufacturing method of the antenna provided by the embodiments of the present disclosure will be described in detail with reference to the accompanying drawings.

[0056] FIG1 is a schematic structural diagram of a power divider provided in accordance with an embodiment of the present disclosure; FIG2 is a schematic cross-sectional diagram of a power divider provided in accordance with an embodiment of the present disclosure. As shown in Figures 1 and 2, the power divider 100 includes a dielectric plate 110, a conductive layer 120, and a grounded conductive plate 130; the conductive layer 120 is located on one side of the dielectric layer 110; the grounded conductive plate 130 is spaced apart from the conductive layer 120; the conductive layer 120 includes an input microstrip line 121 and at least one power dividing unit 140 connected to the input microstrip line 121, each power dividing unit 140 includes a first transmission microstrip line 141 and a second transmission microstrip line 142, each power dividing unit 140 also includes a groove 114 located in the dielectric plate 110 and a resistive material block 144 located in the groove 114, the output end of the first transmission microstrip line 141 away from the input microstrip line 121 and the output end of the second transmission microstrip line 142 away from the input microstrip line 121 are electrically connected to the resistive material block 144, so that the resistive material block 144 is connected between the output end of the first transmission microstrip line 141 and the output end of the second transmission microstrip line 142 to serve as an isolation resistor. It should be noted that the above-mentioned first microstrip line and second microstrip line are also quarter-wavelength impedance transformation lines; in addition, the above-mentioned spacing setting includes the case where an air layer exists between the conductive layer and the ground conductive plate, and also includes the case where other material layers (such as a dielectric plate) exist between the conductive layer and the ground conductive plate.

[0057] In the power divider provided in the embodiment of the present disclosure, by forming a groove on the dielectric plate and disposing a resistive material in the groove, and electrically connecting the output end of the first transmission microstrip line away from the input microstrip line and the output end of the second transmission microstrip line away from the input microstrip line to the resistive material block, the power divider can achieve the arrangement of an isolation resistor between the output end of the first transmission microstrip line and the output end of the second transmission microstrip line, thereby eliminating the need to use a welding process to weld the isolation resistor. As a result, the power divider can significantly reduce the complexity of the manufacturing process and reduce manufacturing costs. On the other hand, because the resistive material block is disposed in the groove of the dielectric plate, the power divider can also provide the dielectric plate provided with the resistive material block with a flat structure, improving the flatness of the power divider, thereby facilitating its integration into other devices, reducing the size of the device, and increasing its compactness.

[0058] It is worth noting that in each power splitter unit, when the electromagnetic wave signal of the first transmission microstrip line is reflected, the electromagnetic wave signal at the output end of the first transmission microstrip line is split into two paths. One path is transmitted to the output end of the second transmission microstrip line through the resistance material block, and the other path is transmitted to the output end of the second transmission microstrip line through the first transmission microstrip line and the second transmission microstrip line. By properly setting the impedance of the resistance material block, the two electromagnetic wave signals can be made to cancel each other out, thereby avoiding affecting the electromagnetic wave signal on the second transmission microstrip line. Thus, the resistance material block can play an isolation role. In some examples, the material of the resistance material block is selected from one or more of a ceramic material, a semiconductor material, and a metal oxide material. The metal oxide material may include indium tin oxide, tin oxide, antimony oxide, etc.; the semiconductor material may be silicon, germanium, etc.

[0059] In some examples, as shown in Figures 1 and 2, the height difference between the surface of the resistive material block 144 away from the bottom of the groove 114 and the surface of the dielectric plate 110 is less than 1 / 10 of the thickness of the first transmission microstrip line 141 or the second transmission microstrip line 142, thereby ensuring high flatness of the power divider. It should be noted that the thickness of the first transmission microstrip line or the second transmission microstrip line may be the dimension of the first transmission microstrip line or the second transmission microstrip line in a direction perpendicular to the dielectric plate.

[0060] In some examples, as shown in Figures 1 and 2, the surface of the resistive material block 144 away from the bottom of the groove 114 is flush with the surface of the dielectric plate 110, that is, the height difference between the surface of the resistive material block 144 away from the bottom of the groove 114 and the surface of the dielectric plate 110 is zero, thereby further improving the flatness of the power divider.

[0061] In some examples, in each power splitter unit 140 , the length of the first transmission microstrip line 141 and the second transmission microstrip line 142 are both one-quarter of the operating wavelength.

[0062] In some examples, as shown in Figures 1 and 2, the orthographic projection of the resistive material block 144 on the dielectric plate 110 is a rectangle, which facilitates manufacturing. Of course, the embodiments of the present disclosure include but are not limited to this, and the orthographic projection of the resistive material block on the dielectric plate can also be other suitable shapes.

[0063] In some examples, the resistive material block 144 may be formed by a sputtering process, a deposition process, an evaporation process, an electroplating process, or the like.

[0064] In some examples, as shown in Figures 1 and 2, the conductive layer 120 includes two-stage power splitter units 140 arranged in series. The first transmission microstrip line 141 and the second transmission microstrip line 142 of the first-stage power splitter unit 140 are connected to the input microstrip line 121, the first transmission microstrip line 141 of the second-stage power splitter unit 140 is electrically connected to the output end of the first transmission microstrip line 141 of the first-stage power splitter unit 140, and the second transmission microstrip line 142 of the second-stage power splitter unit 140 is electrically connected to the output end of the second transmission microstrip line 142 of the first-stage power splitter unit 140; the output end of the first transmission microstrip line 141 and the output end of the second transmission microstrip line 142 of the second-stage power splitter unit 140 respectively serve as the output end of the power splitter or are respectively connected to the output end of the power splitter. Therefore, by setting up two-stage power splitter units, the operating bandwidth of the power splitter can be improved. Of course, the embodiments of the present disclosure include but are not limited to this, and the conductive layer may also include only one power splitter unit or other number of power splitter units.

[0065] By analogy, when the conductive layer includes more power division units arranged in series, the first transmission microstrip line 141 and the second transmission microstrip line 142 of the first-stage power division unit 140 are connected to the input microstrip line 121, the first transmission microstrip line 141 of the next-stage power division unit 140 is electrically connected to the output end of the first transmission microstrip line 141 of the previous-stage power division unit 140, the second transmission microstrip line 142 of the next-stage power division unit 140 is electrically connected to the output end of the second transmission microstrip line 142 of the previous-stage power division unit 140, and the output end of the first transmission microstrip line 141 and the output end of the second transmission microstrip line 142 of the last-stage power division unit 140 respectively serve as the output end of the power divider or are respectively connected to the output end of the power divider.

[0066] In some examples, as shown in Figures 1 and 2, the line width of the first transmission microstrip line 141 of the second-stage power splitting unit 140 is greater than the line width of the first transmission microstrip line 141 of the first-stage power splitting unit 140, and the line width of the second transmission microstrip line 142 of the second-stage power splitting unit 140 is greater than the line width of the second transmission microstrip line 142 of the first-stage power splitting unit 140. In other words, the line width of the first transmission microstrip line 141 of the power splitting unit 140 of the subsequent stage is greater than the line width of the first transmission microstrip line 141 of the power splitting unit 140 of the previous stage, and the line width of the second transmission microstrip line 142 of the power splitting unit 140 of the subsequent stage is greater than the line width of the second transmission microstrip line 142 of the power splitting unit 140 of the previous stage.

[0067] In some examples, as shown in Figures 1 and 2 , the grounded conductive plate 130 is located on a side of the conductive layer 120 away from the dielectric plate 110, and the power divider 100 further includes an air gap layer 150 located between the grounded conductive plate 130 and the conductive layer 120. In other words, an air gap layer 150 exists between the conductive layer 120 and the grounded conductive plate 130. Thus, the power divider can reduce transmission loss through the air gap layer.

[0068] In some examples, the air gap layer 150 has a thickness in the range of 0.20-2.00 mm, such as 0.25, 0.5, 0.75, 1.00, 1.25, 1.50, 1.75 mm.

[0069] In some examples, as shown in Figures 1 and 2, in each power splitter unit 140, the first transmission microstrip line 141 includes a plurality of first U-shaped bends 1415, and the second transmission microstrip line 142 includes a plurality of second U-shaped bends 1425. Thus, the power splitter can reduce the size (transverse size) of the first transmission microstrip line and the second transmission microstrip line in a second direction perpendicular to the first direction by providing the first U-shaped bends and the second U-shaped bends, thereby reducing the area occupied by the power splitter and improving the compactness of the power splitter.

[0070] In some examples, as shown in Figures 1 and 2 , in a first-stage power splitting unit 140, the first transmission microstrip line 141 includes two first U-shaped bends 1415, and the second transmission microstrip line 142 includes two second U-shaped bends 1425; and in a second-stage power splitting unit 140, the first transmission microstrip line 141 includes two first U-shaped bends 1415, and the second transmission microstrip line 142 includes two second U-shaped bends 1425. Although the first transmission microstrip lines in the two-stage power splitting units shown in Figures 1 and 2 include the same number of first U-shaped bends, embodiments of the present disclosure include but are not limited to this, and the number of first U-shaped bends included in the first transmission microstrip lines of different power splitting units may also vary.

[0071] In some examples, as shown in Figures 1 and 2, the corner of the first U-shaped bend 1415 is an oblique angle, and the corner of the second U-shaped bend 1425 is an oblique angle, that is, the corner includes a folded angle. It should be noted that the oblique angle mentioned above means that the angle between the extension direction of the outer edge of the oblique angle and the extension direction of the two parallel strips of the U-shaped bend is less than 90 degrees.

[0072] In some examples, as shown in Figures 1 and 2, the impedance of the input microstrip line 121 may be 50 ohms, the impedance of the first transmission microstrip line 141 and the second transmission microstrip line 142 of the first-stage power splitter 140 may be 85 ohms, and the impedance of the first transmission microstrip line 141 and the second transmission microstrip line 142 of the second-stage power splitter 140 may be 60 ohms.

[0073] In some examples, as shown in FIG. 1 and FIG. 2 , the line width of the first transmission microstrip line 141 may be smaller than the line width of the input microstrip line 121 , and the line width of the second transmission microstrip line 142 may be larger than the line width of the input microstrip line 121 .

[0074] In some examples, as shown in FIG1 and FIG2 , the width of the input microstrip line 121 ranges from 1.50 mm to 2.00 mm, for example, 1.87 mm.

[0075] In some examples, the impedance of the resistive material block 144 of the first-stage power splitting unit 140 may be 100 ohms, and the impedance of the resistive material block 144 of the second-stage power splitting unit 140 may be 250 ohms.

[0076] FIG3 is a curve showing the variation of the S11 parameter of a power divider provided by an embodiment of the present disclosure with frequency; FIG4 is a curve showing the variation of the isolation of a power divider provided by an embodiment of the present disclosure with frequency. As shown in FIG3, within the frequency range of 1.71 GHz to 4.09 GHz, the S11 of the power divider is less than -15 dB, and the relative bandwidth reaches 82%; as shown in FIG4, within the range of 2.08 GHz to 3.14 GHz, the isolation of the two output ports of the power divider is greater than 30 dB. Therefore, the power divider not only has lower noise in a larger operating bandwidth range, but also has higher isolation. Therefore, the power divider not only has lower manufacturing process complexity and lower manufacturing cost, but also has better electrical performance.

[0077] FIG5 is a schematic structural diagram of another power divider provided in one embodiment of the present disclosure; FIG6 is a schematic cross-sectional diagram of another power divider provided in one embodiment of the present disclosure. As shown in Figures 5 and 6, the power divider 100 includes a dielectric plate 110, a conductive layer 120 and a grounded conductive plate 130; the conductive layer 120 is located on one side of the dielectric layer 110; the grounded conductive plate 130 is spaced apart from the conductive layer 120; the conductive layer 120 includes an input microstrip line 121 and at least one power dividing unit 140 connected to the input microstrip line 121, each power dividing unit 140 includes a first transmission microstrip line 141 and a second transmission microstrip line 142, each power dividing unit 140 also includes a groove 114 located in the dielectric plate 110 and a resistive material block 144 located in the groove 114, the output end of the first transmission microstrip line 141 away from the input microstrip line 121 and the output end of the second transmission microstrip line 142 away from the input microstrip line 121 are electrically connected to the resistive material block 144, so that the resistive material block 144 is connected between the output end of the first transmission microstrip line 141 and the output end of the second transmission microstrip line 142 to serve as an isolation resistor. It should be noted that the first microstrip line and the second microstrip line are also quarter-wavelength impedance transformation lines.

[0078] As shown in FIG. 5 and FIG. 6 , the resistance material block 144 includes a plurality of first sub-resistance material blocks 144A connected to each other, and different first sub-resistance material blocks 144A are made of different materials.

[0079] In the power divider provided in the embodiment of the present disclosure, by forming a groove on the dielectric plate and disposing a resistive material in the groove, and electrically connecting the output end of the first transmission microstrip line away from the input microstrip line and the output end of the second transmission microstrip line away from the input microstrip line to the resistive material block, the power divider can achieve the arrangement of an isolation resistor between the output end of the first transmission microstrip line and the output end of the second transmission microstrip line, thereby eliminating the need to use a welding process to weld the isolation resistor. As a result, the power divider can significantly reduce the complexity of the manufacturing process and reduce manufacturing costs. On the other hand, because the resistive material block is disposed in the groove of the dielectric plate, the power divider can also provide the dielectric plate provided with the resistive material block with a flat structure, improving the flatness of the power divider, thereby facilitating its integration into other devices, reducing the size of the device, and increasing its compactness.

[0080] Furthermore, because the resistive material block includes multiple interconnected first sub-resistive material blocks, each of which is made of different materials. Therefore, by using different materials to form the multiple first sub-resistive material blocks, the power divider can enhance the isolation effect of the resistive material blocks, further improving the performance of the power divider.

[0081] In some examples, the material of the resistive material block is selected from one or more of a ceramic material, a semiconductor material, and a metal oxide material. The metal oxide material may include indium tin oxide, tin oxide, antimony oxide, etc.; the semiconductor material may be silicon, germanium, etc.

[0082] In some examples, as shown in Figures 5 and 6 , input microstrip line 121 and at least one power splitter unit 140 are arranged along a first direction, and multiple first sub-resistance material blocks 144A are also arranged along the first direction. Thus, multiple first sub-resistance material blocks 144A are arranged along the propagation direction of electromagnetic waves, thereby enhancing the isolation effect of the resistance material blocks and further improving the performance of the power splitter.

[0083] In some examples, as shown in FIG. 5 and FIG. 6 , the resistivity of the plurality of first sub-resistance material blocks 144A gradually decreases along the first direction, thereby further improving the isolation effect of the resistance material blocks.

[0084] In some examples, as shown in Figures 5 and 6 , the height difference between the surface of the resistive material block 144 away from the bottom of the groove 114 and the surface of the dielectric plate 110 is less than 1 / 10 of the thickness of the first transmission microstrip line 141 or the second transmission microstrip line 142, thereby ensuring high flatness of the power divider. It should be noted that the thickness of the first transmission microstrip line or the second transmission microstrip line may be the dimension of the first transmission microstrip line or the second transmission microstrip line in a direction perpendicular to the dielectric plate.

[0085] In some examples, as shown in Figures 5 and 6, the surface of the resistive material block 144 away from the bottom of the groove 114 is flush with the surface of the dielectric plate 110, that is, the height difference between the surface of the resistive material block 144 away from the bottom of the groove 114 and the surface of the dielectric plate 110 is zero, thereby further improving the flatness of the power divider.

[0086] In some examples, as shown in FIG5 and FIG6 , in each power splitter unit 140 , the length of the first transmission microstrip line 141 and the second transmission microstrip line 142 are both one-quarter of the operating wavelength.

[0087] In some examples, as shown in Figures 5 and 6 , the orthographic projection of the resistive material block 144 on the dielectric plate 110 is rectangular, facilitating fabrication. The orthographic projection of each first sub-resistive material 144A on the dielectric plate 110 is also rectangular. Of course, embodiments of the present disclosure include but are not limited to these. The orthographic projection of the resistive material block on the dielectric plate may also have other suitable shapes, and the orthographic projection of the first sub-resistive material on the dielectric plate may also have other suitable shapes.

[0088] In some examples, the resistive material block 144 may be formed by a sputtering process, a deposition process, an evaporation process, an electroplating process, or the like.

[0089] In some examples, as shown in Figures 5 and 6, the conductive layer 120 includes two-stage power splitter units 140 arranged in series. The first transmission microstrip line 141 and the second transmission microstrip line 142 of the first-stage power splitter unit 140 are connected to the input microstrip line 121, the first transmission microstrip line 141 of the second-stage power splitter unit 140 is electrically connected to the output end of the first transmission microstrip line 141 of the first-stage power splitter unit 140, and the second transmission microstrip line 142 of the second-stage power splitter unit 140 is electrically connected to the output end of the second transmission microstrip line 142 of the first-stage power splitter unit 140; the output end of the first transmission microstrip line 141 and the output end of the second transmission microstrip line 142 of the second-stage power splitter unit 140 respectively serve as the output end of the power splitter or are respectively connected to the output end of the power splitter. Therefore, by setting up two-stage power splitter units, the operating bandwidth of the power splitter can be improved. Of course, the embodiments of the present disclosure include but are not limited to this, and the conductive layer may also include only one power splitter unit or other number of power splitter units.

[0090] In some examples, as shown in Figures 5 and 6, the line width of the first transmission microstrip line 141 of the second-stage power splitting unit 140 is greater than the line width of the first transmission microstrip line 141 of the first-stage power splitting unit 140, and the line width of the second transmission microstrip line 142 of the second-stage power splitting unit 140 is greater than the line width of the second transmission microstrip line 142 of the first-stage power splitting unit 140. In other words, the line width of the first transmission microstrip line 141 of the power splitting unit 140 of the subsequent stage is greater than the line width of the first transmission microstrip line 141 of the power splitting unit 140 of the previous stage, and the line width of the second transmission microstrip line 142 of the power splitting unit 140 of the subsequent stage is greater than the line width of the second transmission microstrip line 142 of the power splitting unit 140 of the previous stage.

[0091] In some examples, as shown in Figures 5 and 6 , the grounded conductive plate 130 is located on a side of the conductive layer 120 away from the dielectric plate 110, and the power divider 100 further includes an air gap layer 150 located between the grounded conductive plate 130 and the conductive layer 120. In other words, an air gap layer 150 exists between the conductive layer 120 and the grounded conductive plate 130. Thus, the power divider can reduce transmission loss through the air gap layer.

[0092] In some examples, the air gap layer 150 has a thickness in the range of 0.20-2.00 mm, such as 0.25, 0.5, 0.75, 1.00, 1.25, 1.50, 1.75 mm.

[0093] In some examples, as shown in Figures 5 and 6, in each power splitter unit 140, the first transmission microstrip line 141 includes a plurality of first U-shaped bends 1415, and the second transmission microstrip line 142 includes a plurality of second U-shaped bends 1425. Thus, the power splitter can reduce the size (transverse size) of the first transmission microstrip line and the second transmission microstrip line in a second direction perpendicular to the first direction by providing the first U-shaped bends and the second U-shaped bends, thereby reducing the area occupied by the power splitter and improving the compactness of the power splitter.

[0094] In some examples, as shown in Figures 5 and 6 , in the first-stage power splitting unit 140, the first transmission microstrip line 141 includes two first U-shaped bends 1415, and the second transmission microstrip line 142 includes two second U-shaped bends 1425; and in the second-stage power splitting unit 140, the first transmission microstrip line 141 includes two first U-shaped bends 1415, and the second transmission microstrip line 142 includes two second U-shaped bends 1425. Although the first transmission microstrip lines in the two-stage power splitting units shown in Figures 5 and 6 include the same number of first U-shaped bends, embodiments of the present disclosure include but are not limited to this, and the number of first U-shaped bends included in the first transmission microstrip lines of different power splitting units may also be different.

[0095] In some examples, as shown in Figures 5 and 6, the corner of the first U-shaped bend 1415 is an oblique angle, and the corner of the second U-shaped bend 1425 is an oblique angle, that is, the corner includes a folded angle. It should be noted that the oblique angle mentioned above means that the angle between the extension direction of the outer edge of the oblique angle and the extension direction of the two parallel strips of the U-shaped bend is less than 90 degrees.

[0096] FIG7 is a schematic structural diagram of another power divider provided in one embodiment of the present disclosure; FIG8 is a schematic cross-sectional diagram of another power divider provided in one embodiment of the present disclosure. As shown in Figures 7 and 8, the power divider 100 includes a dielectric plate 110, a conductive layer 120 and a grounded conductive plate 130; the conductive layer 120 is located on one side of the dielectric layer 110; the grounded conductive plate 130 is spaced apart from the conductive layer 120; the conductive layer 120 includes an input microstrip line 121 and at least one power dividing unit 140 connected to the input microstrip line 121, each power dividing unit 140 includes a first transmission microstrip line 141 and a second transmission microstrip line 142, each power dividing unit 140 also includes a groove 114 located in the dielectric plate 110 and a resistive material block 144 located in the groove 114, the output end of the first transmission microstrip line 141 away from the input microstrip line 121 and the output end of the second transmission microstrip line 142 away from the input microstrip line 121 are electrically connected to the resistive material block 144, so that the resistive material block 144 is connected between the output end of the first transmission microstrip line 141 and the output end of the second transmission microstrip line 142 to serve as an isolation resistor. It should be noted that the first microstrip line and the second microstrip line are also quarter-wavelength impedance transformation lines.

[0097] 7 and 8 , the groove 114 includes a plurality of interconnected sub-grooves 1145, and the depths of different sub-grooves 1145 are different. It should be noted that the depth of the sub-grooves may be the dimension of the sub-grooves in a direction perpendicular to the dielectric plate.

[0098] In the power divider provided in the embodiment of the present disclosure, by forming a groove on the dielectric plate and disposing a resistive material in the groove, and electrically connecting the output end of the first transmission microstrip line away from the input microstrip line and the output end of the second transmission microstrip line away from the input microstrip line to the resistive material block, the power divider can achieve the arrangement of an isolation resistor between the output end of the first transmission microstrip line and the output end of the second transmission microstrip line, thereby eliminating the need to use a welding process to weld the isolation resistor. As a result, the power divider can significantly reduce the complexity of the manufacturing process and reduce manufacturing costs. On the other hand, because the resistive material block is disposed in the groove of the dielectric plate, the power divider can also provide the dielectric plate provided with the resistive material block with a flat structure, improving the flatness of the power divider, thereby facilitating its integration into other devices, reducing the size of the device, and increasing its compactness.

[0099] Furthermore, because the groove includes multiple interconnected sub-grooves, each having a different depth, the portions of the resistive material block in different sub-grooves have different resistances, thereby enhancing the isolation effect of the resistive material block and further improving the performance of the power divider.

[0100] In some examples, the material of the resistive material block is selected from one or more of a ceramic material, a semiconductor material, and a metal oxide material. The metal oxide material may include indium tin oxide, tin oxide, antimony oxide, etc.; the semiconductor material may be silicon, germanium, etc.

[0101] In some examples, as shown in Figures 7 and 8 , the resistive material block 144 includes a plurality of second sub-resistive material blocks 144B corresponding one-to-one to the plurality of sub-recesses 1145. The surfaces of the plurality of second sub-resistive material blocks 144B away from the bottom of the recess 114 are flush. Thus, the power divider has a high degree of flatness, and the plurality of second sub-resistive material blocks can also enhance the isolation effect of the resistive material blocks, further improving the performance of the power divider.

[0102] In some examples, as shown in Figures 7 and 8, the input microstrip line 121 and at least one first-stage power splitter 140 are arranged along a first direction, and the plurality of sub-grooves 1145 are arranged along the first direction. Consequently, the plurality of second sub-resistance material blocks 144B corresponding to the plurality of sub-grooves 1145 are arranged along the propagation direction of the electromagnetic wave, thereby enhancing the isolation effect of the resistance material blocks and further improving the performance of the power splitter.

[0103] In some examples, as shown in Figures 7 and 8 , the height difference between the surface of the resistive material block 144 away from the bottom of the groove 114 and the surface of the dielectric plate 110 is less than 1 / 10 of the thickness of the first transmission microstrip line 141 or the second transmission microstrip line 142, thereby ensuring high flatness of the power divider. It should be noted that the thickness of the first transmission microstrip line or the second transmission microstrip line may be the dimension of the first transmission microstrip line or the second transmission microstrip line in a direction perpendicular to the dielectric plate.

[0104] In some examples, as shown in Figures 7 and 8, the surface of the resistive material block 144 away from the bottom of the groove 114 is flush with the surface of the dielectric plate 110, that is, the height difference between the surface of the resistive material block 144 away from the bottom of the groove 114 and the surface of the dielectric plate 110 is zero, thereby further improving the flatness of the power divider.

[0105] In some examples, as shown in FIG7 and FIG8 , in each power splitting unit 140 , the length of the first transmission microstrip line 141 and the second transmission microstrip line 142 are both one-quarter of the operating wavelength.

[0106] In some examples, as shown in Figures 7 and 8 , the orthographic projection of the resistive material block 144 on the dielectric plate 110 is rectangular, facilitating fabrication. The orthographic projection of each first sub-resistive material 144A on the dielectric plate 110 is also rectangular. Of course, embodiments of the present disclosure include but are not limited to these. The orthographic projection of the resistive material block on the dielectric plate may also have other suitable shapes, and the orthographic projection of the first sub-resistive material on the dielectric plate may also have other suitable shapes.

[0107] In some examples, the resistive material block 144 may be formed by a sputtering process, a deposition process, an evaporation process, an electroplating process, or the like.

[0108] In some examples, as shown in Figures 7 and 8, the conductive layer 120 includes two-stage power splitter units 140 arranged in series. The first transmission microstrip line 141 and the second transmission microstrip line 142 of the first-stage power splitter unit 140 are connected to the input microstrip line 121, the first transmission microstrip line 141 of the second-stage power splitter unit 140 is electrically connected to the output end of the first transmission microstrip line 141 of the first-stage power splitter unit 140, and the second transmission microstrip line 142 of the second-stage power splitter unit 140 is electrically connected to the output end of the second transmission microstrip line 142 of the first-stage power splitter unit 140; the output end of the first transmission microstrip line 141 and the output end of the second transmission microstrip line 142 of the second-stage power splitter unit 140 respectively serve as the output end of the power splitter or are respectively connected to the output end of the power splitter. Therefore, by setting up two-stage power splitter units, the operating bandwidth of the power splitter can be improved. Of course, the embodiments of the present disclosure include but are not limited to this, and the conductive layer may also include only one power splitter unit or other number of power splitter units.

[0109] In some examples, as shown in Figures 7 and 8, the line width of the first transmission microstrip line 141 of the second-stage power splitting unit 140 is greater than the line width of the first transmission microstrip line 141 of the first-stage power splitting unit 140, and the line width of the second transmission microstrip line 142 of the second-stage power splitting unit 140 is greater than the line width of the second transmission microstrip line 142 of the first-stage power splitting unit 140. In other words, the line width of the first transmission microstrip line 141 of the power splitting unit 140 of the subsequent stage is greater than the line width of the first transmission microstrip line 141 of the power splitting unit 140 of the previous stage, and the line width of the second transmission microstrip line 142 of the power splitting unit 140 of the subsequent stage is greater than the line width of the second transmission microstrip line 142 of the power splitting unit 140 of the previous stage.

[0110] In some examples, as shown in Figures 7 and 8 , the grounded conductive plate 130 is located on a side of the conductive layer 120 away from the dielectric plate 110, and the power divider 100 further includes an air gap layer 150 located between the grounded conductive plate 130 and the conductive layer 120. In other words, an air gap layer 150 exists between the conductive layer 120 and the grounded conductive plate 130. Thus, the power divider can reduce transmission loss through the air gap layer.

[0111] In some examples, the air gap layer 150 has a thickness in the range of 0.20-2.00 mm, such as 0.25, 0.5, 0.75, 1.00, 1.25, 1.50, 1.75 mm.

[0112] In some examples, as shown in Figures 7 and 8, in each power splitter unit 140, the first transmission microstrip line 141 includes a plurality of first U-shaped bends 1415, and the second transmission microstrip line 142 includes a plurality of second U-shaped bends 1425. Thus, the power splitter can reduce the size (transverse size) of the first transmission microstrip line and the second transmission microstrip line in a second direction perpendicular to the first direction by providing the first U-shaped bends and the second U-shaped bends, thereby reducing the area occupied by the power splitter and improving the compactness of the power splitter.

[0113] In some examples, as shown in Figures 7 and 8 , in the first-stage power splitting unit 140, the first transmission microstrip line 141 includes two first U-shaped bends 1415, and the second transmission microstrip line 142 includes two second U-shaped bends 1425; and in the second-stage power splitting unit 140, the first transmission microstrip line 141 includes two first U-shaped bends 1415, and the second transmission microstrip line 142 includes two second U-shaped bends 1425. Although the first transmission microstrip lines in the two-stage power splitting units shown in Figures 7 and 8 have the same number of first U-shaped bends, embodiments of the present disclosure include but are not limited to this, and the number of first U-shaped bends included in the first transmission microstrip lines of different power splitting units may also be different.

[0114] In some examples, as shown in Figures 7 and 8, the corner of the first U-shaped bend 1415 is an oblique angle, and the corner of the second U-shaped bend 1425 is an oblique angle, that is, the corner includes a folded angle. It should be noted that the oblique angle mentioned above means that the angle between the extension direction of the outer edge of the oblique angle and the extension direction of the two parallel strips of the U-shaped bend is less than 90 degrees.

[0115] FIG9 is a schematic structural diagram of another power divider provided in an embodiment of the present disclosure; FIG10 is a schematic structural diagram of another power divider provided in an embodiment of the present disclosure. As shown in Figures 9 and 10, the power divider 100 also includes a dielectric plate 110, a conductive layer 120 and a grounded conductive plate 130; the conductive layer 120 is located on one side of the dielectric layer 110; the grounded conductive plate 130 is spaced apart from the conductive layer 120; the conductive layer 120 includes an input microstrip line 121 and at least one power dividing unit 140 connected to the input microstrip line 121, each power dividing unit 140 includes a first transmission microstrip line 141 and a second transmission microstrip line 142, each power dividing unit 140 also includes a groove 114 located in the dielectric plate 110 and a resistive material block 144 located in the groove 114, the output end of the first transmission microstrip line 141 away from the input microstrip line 121 and the output end of the second transmission microstrip line 142 away from the input microstrip line 121 are electrically connected to the resistive material block 144, so that the resistive material block 144 is connected between the output end of the first transmission microstrip line 141 and the output end of the second transmission microstrip line 142 to serve as an isolation resistor. It should be noted that the first and second microstrip lines are also quarter-wavelength impedance transformation lines. In addition, the resistive material blocks in the power dividers shown in Figures 9 and 10 can adopt the structure and materials of any of the resistive material blocks in the power dividers shown in Figures 1, 5, and 7.

[0116] In the power divider provided in the embodiment of the present disclosure, by forming a groove on the dielectric plate and disposing a resistive material in the groove, and electrically connecting the output end of the first transmission microstrip line away from the input microstrip line and the output end of the second transmission microstrip line away from the input microstrip line to the resistive material block, the power divider can achieve the arrangement of an isolation resistor between the output end of the first transmission microstrip line and the output end of the second transmission microstrip line, thereby eliminating the need to use a welding process to weld the isolation resistor. As a result, the power divider can significantly reduce the complexity of the manufacturing process and reduce manufacturing costs. On the other hand, because the resistive material block is disposed in the groove of the dielectric plate, the power divider can also provide the dielectric plate provided with the resistive material block with a flat structure, improving the flatness of the power divider, thereby facilitating its integration into other devices, reducing the size of the device, and increasing its compactness.

[0117] In some examples, as shown in Figures 9 and 10, in each power splitter unit 140, the first transmission microstrip line 141 includes a plurality of first U-shaped bends 1415, and the second transmission microstrip line 142 includes a plurality of second U-shaped bends 1425. Thus, the power splitter can reduce the size of the first transmission microstrip line and the second transmission microstrip line by providing the first U-shaped bends and the second U-shaped bends, respectively, thereby reducing the area occupied by the power splitter and improving the compactness of the power splitter.

[0118] In some examples, as shown in Figures 9 and 10, in the first-stage power splitting unit 140, the first transmission microstrip line 141 includes two first U-shaped bends 1415, and the second transmission microstrip line 142 includes two second U-shaped bends 1425; and in the second-stage power splitting unit 140, the first transmission microstrip line 141 includes two first U-shaped bends 1415, and the second transmission microstrip line 142 includes two second U-shaped bends 1425. Although the first transmission microstrip lines in the two-stage power splitting units shown in Figures 9 and 10 include the same number of first U-shaped bends, embodiments of the present disclosure include but are not limited to this, and the number of first U-shaped bends included in the first transmission microstrip lines of different power splitting units may also be different.

[0119] In some examples, unlike the power dividers shown in Figures 1 and 2 , as shown in Figure 9 , the corners of the first U-shaped bend 1415 and the second U-shaped bend 1425 are right angles. It should be noted that the right angles mentioned above refer to the outer edges of the corners being right angles. This arrangement eliminates the need for chamfering the U-shaped bends of the power divider, thereby reducing manufacturing complexity.

[0120] In some examples, unlike the power dividers shown in Figures 1 and 2 , as shown in Figure 10 , the corners of the first U-shaped bend 1415 and the corners of the second U-shaped bend 1425 are rounded. It should be noted that the rounded corners refer to the outer edges of the corners being arcs. With this configuration, the rounded corners of the U-shaped bends of the power divider can smooth the first and second transmission microstrip lines, thereby reducing transmission loss in the power divider.

[0121] In some examples, the material of the resistive material block is selected from one or more of a ceramic material, a semiconductor material, and a metal oxide material. The metal oxide material may include indium tin oxide, tin oxide, antimony oxide, etc.; the semiconductor material may be silicon, germanium, etc.

[0122] In some examples, as shown in Figures 9 and 10, the input microstrip line 121 and at least one first-stage power splitter 140 are arranged along a first direction, and the plurality of sub-grooves 1145 are arranged along the first direction. Consequently, the plurality of second sub-resistance material blocks 144B corresponding to the plurality of sub-grooves 1145 are arranged along the propagation direction of the electromagnetic wave, thereby enhancing the isolation effect of the resistance material blocks and further improving the performance of the power splitter.

[0123] In some examples, as shown in Figures 9 and 10, the height difference between the surface of the resistive material block 144 away from the bottom of the groove 114 and the surface of the dielectric plate 110 is less than 1 / 10 of the thickness of the first transmission microstrip line 141 or the second transmission microstrip line 142, thereby ensuring high flatness of the power divider. It should be noted that the thickness of the first transmission microstrip line or the second transmission microstrip line may be the dimension of the first transmission microstrip line or the second transmission microstrip line in a direction perpendicular to the dielectric plate.

[0124] In some examples, as shown in Figures 9 and 10, the surface of the resistive material block 144 away from the bottom of the groove 114 is flush with the surface of the dielectric plate 110, that is, the height difference between the surface of the resistive material block 144 away from the bottom of the groove 114 and the surface of the dielectric plate 110 is zero, thereby further improving the flatness of the power divider.

[0125] In some examples, as shown in FIG9 and FIG10 , in each power splitter unit 140 , the length of the first transmission microstrip line 141 and the second transmission microstrip line 142 are both one-quarter of the operating wavelength.

[0126] In some examples, as shown in Figures 9 and 10 , the orthographic projection of the resistive material block 144 on the dielectric plate 110 is rectangular, facilitating fabrication. The orthographic projection of each first sub-resistive material 144A on the dielectric plate 110 is also rectangular. Of course, embodiments of the present disclosure include but are not limited to these. The orthographic projection of the resistive material block on the dielectric plate may also have other suitable shapes, and the orthographic projection of the first sub-resistive material on the dielectric plate may also have other suitable shapes.

[0127] In some examples, the resistive material block 144 may be formed by a sputtering process, a deposition process, an evaporation process, an electroplating process, or the like.

[0128] In some examples, as shown in Figures 9 and 10, the conductive layer 120 includes two-stage power splitter units 140 arranged in series. The first transmission microstrip line 141 and the second transmission microstrip line 142 of the first-stage power splitter unit 140 are connected to the input microstrip line 121, the first transmission microstrip line 141 of the second-stage power splitter unit 140 is electrically connected to the output end of the first transmission microstrip line 141 of the first-stage power splitter unit 140, and the second transmission microstrip line 142 of the second-stage power splitter unit 140 is electrically connected to the output end of the second transmission microstrip line 142 of the first-stage power splitter unit 140; the output end of the first transmission microstrip line 141 and the output end of the second transmission microstrip line 142 of the second-stage power splitter unit 140 respectively serve as the output end of the power splitter or are respectively connected to the output end of the power splitter. Therefore, by setting up two-stage power splitter units, the operating bandwidth of the power splitter can be improved. Of course, the embodiments of the present disclosure include but are not limited to this, and the conductive layer may also include only one power splitter unit or other number of power splitter units.

[0129] In some examples, as shown in Figures 9 and 10, the line width of the first transmission microstrip line 141 of the second-stage power splitting unit 140 is greater than the line width of the first transmission microstrip line 141 of the first-stage power splitting unit 140, and the line width of the second transmission microstrip line 142 of the second-stage power splitting unit 140 is greater than the line width of the second transmission microstrip line 142 of the first-stage power splitting unit 140. In other words, the line width of the first transmission microstrip line 141 of the power splitting unit 140 of the subsequent stage is greater than the line width of the first transmission microstrip line 141 of the power splitting unit 140 of the previous stage, and the line width of the second transmission microstrip line 142 of the power splitting unit 140 of the subsequent stage is greater than the line width of the second transmission microstrip line 142 of the power splitting unit 140 of the previous stage.

[0130] In some examples, as shown in Figures 9 and 10 , the grounded conductive plate 130 is located on a side of the conductive layer 120 away from the dielectric plate 110, and the power divider 100 further includes an air gap layer 150 located between the grounded conductive plate 130 and the conductive layer 120. In other words, an air gap layer 150 exists between the conductive layer 120 and the grounded conductive plate 130. Thus, the power divider can reduce transmission loss through the air gap layer.

[0131] In some examples, the air gap layer 150 has a thickness in the range of 0.20-2.00 mm, such as 0.25, 0.5, 0.75, 1.00, 1.25, 1.50, 1.75 mm.

[0132] FIG11 is a schematic structural diagram of another power divider provided in an embodiment of the present disclosure. As shown in Figure 11, the power divider 100 also includes a dielectric plate 110, a conductive layer 120 and a ground conductive plate 130; the conductive layer 120 is located on one side of the dielectric layer 110; the ground conductive plate 130 is spaced apart from the conductive layer 120; the conductive layer 120 includes an input microstrip line 121 and at least one power dividing unit 140 connected to the input microstrip line 121, each power dividing unit 140 includes a first transmission microstrip line 141 and a second transmission microstrip line 142, each power dividing unit 140 also includes a groove 114 located in the dielectric plate 110 and a resistive material block 144 located in the groove 114, the output end of the first transmission microstrip line 141 away from the input microstrip line 121 and the output end of the second transmission microstrip line 142 away from the input microstrip line 121 are electrically connected to the resistive material block 144, so that the resistive material block 144 is connected between the output end of the first transmission microstrip line 141 and the output end of the second transmission microstrip line 142 to serve as an isolation resistor. It should be noted that the first microstrip line and the second microstrip line are also quarter-wavelength impedance transformation lines.

[0133] Unlike the power splitter shown in Figure 1 , in each power splitting unit 140 , the line width of the first transmission microstrip line 141 is unequal to the line width of the second transmission microstrip line 142; for example, the line width of the first transmission microstrip line 141 is smaller than the line width of the second transmission microstrip line 142. Thus, this power splitting unit can achieve unequal power splitting.

[0134] In some examples, as shown in FIG11 , the conductive layer 120 includes two-stage power splitter units 140 arranged in series. The first transmission microstrip line 141 and the second transmission microstrip line 142 of the first-stage power splitter unit 140 are connected to the input microstrip line 121, the first transmission microstrip line 141 of the second-stage power splitter unit 140 is electrically connected to the output end of the first transmission microstrip line 141 of the first-stage power splitter unit 140, and the second transmission microstrip line 142 of the second-stage power splitter unit 140 is electrically connected to the output end of the second transmission microstrip line 142 of the first-stage power splitter unit 140; the output end of the first transmission microstrip line 141 and the output end of the second transmission microstrip line 142 of the second-stage power splitter unit 140 respectively serve as the output end of the power splitter or are respectively connected to the output end of the power splitter. Thus, by setting up two-stage power splitter units, the operating bandwidth of the power splitter can be improved. Of course, the embodiments of the present disclosure include but are not limited to this, and the conductive layer may also include only one power splitter unit or other number of power splitter units.

[0135] In some examples, as shown in FIG11 , the line width of the first transmission microstrip line 141 in the first-stage power splitting unit 140 is smaller than the line width of the second transmission microstrip line 142, and the line width of the first transmission microstrip line 141 in the second-stage power splitting unit 140 is also smaller than the line width of the second transmission microstrip line 142. Thus, the power splitting unit can better achieve unequal power splitting.

[0136] FIG12 is a schematic structural diagram of another power divider provided in an embodiment of the present disclosure. As shown in Figure 12, the power divider 100 also includes a dielectric plate 110, a conductive layer 120 and a ground conductive plate 130; the conductive layer 120 is located on one side of the dielectric layer 110; the ground conductive plate 130 is spaced apart from the conductive layer 120; the conductive layer 120 includes an input microstrip line 121 and at least one power dividing unit 140 connected to the input microstrip line 121, each power dividing unit 140 includes a first transmission microstrip line 141 and a second transmission microstrip line 142, each power dividing unit 140 also includes a groove 114 located in the dielectric plate 110 and a resistive material block 144 located in the groove 114, the output end of the first transmission microstrip line 141 away from the input microstrip line 121 and the output end of the second transmission microstrip line 142 away from the input microstrip line 121 are electrically connected to the resistive material block 144, so that the resistive material block 144 is connected between the output end of the first transmission microstrip line 141 and the output end of the second transmission microstrip line 142 to serve as an isolation resistor. It should be noted that the first microstrip line and the second microstrip line are also quarter-wavelength impedance transformation lines.

[0137] As shown in FIG12 , the at least one power splitter unit 140 includes N power splitters 140 arranged in series; the first transmission microstrip line 141 of the power splitter unit 140 of the subsequent stage is electrically connected to the output end of the first transmission microstrip line 141 of the power splitter unit 140 of the previous stage, and the second transmission microstrip line 142 of the power splitter unit 140 of the subsequent stage is electrically connected to the output end of the second transmission microstrip line 140 of the power splitter unit 140 of the previous stage, where N is a positive integer greater than or equal to 2. It should be noted that FIG12 illustrates the case where N is 3, but embodiments of the present disclosure include but are not limited to this case.

[0138] In the power divider provided in the embodiments of the present disclosure, by forming a groove in a dielectric plate and placing a resistive material in the groove, and electrically connecting the output end of the first transmission microstrip line away from the input microstrip line and the output end of the second transmission microstrip line away from the input microstrip line to the resistive material block, the power divider can achieve the arrangement of an isolation resistor between the output end of the first transmission microstrip line and the output end of the second transmission microstrip line, thereby eliminating the need to use a welding process to weld the isolation resistor. As a result, the power divider can significantly reduce the complexity of the manufacturing process and reduce manufacturing costs. Furthermore, because the resistive material block is placed in the groove of the dielectric plate, the power divider can also provide the dielectric plate provided with the resistive material block with a flat structure, thereby improving the flatness of the power divider.

[0139] On the other hand, by providing N-stage power splitter units 140 arranged in series, the power splitter can further increase the operating bandwidth of the power splitter and improve the isolation. Of course, the embodiments of the present disclosure include but are not limited to this, and the conductive layer can also include only one power splitter unit or other number of power splitters.

[0140] In some examples, the material of the resistive material block is selected from one or more of a ceramic material, a semiconductor material, and a metal oxide material. The metal oxide material may include indium tin oxide, tin oxide, antimony oxide, etc.; the semiconductor material may be silicon, germanium, etc.

[0141] In some examples, as shown in FIG12 , the height difference between the surface of the resistive material block 144 away from the bottom of the groove 114 and the surface of the dielectric plate 110 is less than 1 / 10 of the thickness of the first transmission microstrip line 141 or the second transmission microstrip line 142, thereby enabling the power divider to have a high degree of flatness. It should be noted that the thickness of the first transmission microstrip line or the second transmission microstrip line may be the dimension of the first transmission microstrip line or the second transmission microstrip line in a direction perpendicular to the dielectric plate.

[0142] In some examples, as shown in FIG12 , the surface of the resistive material block 144 away from the bottom of the groove 114 is flush with the surface of the dielectric plate 110 , that is, the height difference between the surface of the resistive material block 144 away from the bottom of the groove 114 and the surface of the dielectric plate 110 is zero, thereby further improving the flatness of the power divider.

[0143] In some examples, as shown in Figure 12, the orthographic projection of the resistive material block 144 on the dielectric plate 110 is a rectangle, which facilitates manufacturing. Of course, the embodiments of the present disclosure include but are not limited to this, and the orthographic projection of the resistive material block on the dielectric plate can also be other suitable shapes.

[0144] In some examples, the resistive material block 144 may be formed by a sputtering process, a deposition process, an evaporation process, an electroplating process, or the like.

[0145] In some examples, as shown in FIG12 , the line width of the first transmission microstrip line 141 of the second-stage power division unit 140 is greater than the line width of the first transmission microstrip line 141 of the first-stage power division unit 140, and the line width of the first transmission microstrip line 141 of the third-stage power division unit 140 is greater than the line width of the first transmission microstrip line 141 of the second-stage power division unit 140; the line width of the second transmission microstrip line 142 of the second-stage power division unit 140 is greater than the line width of the second transmission microstrip line 142 of the first-stage power division unit 140, and the line width of the second transmission microstrip line 142 of the third-stage power division unit 140 is greater than the line width of the second transmission microstrip line 142 of the second-stage power division unit 140. That is to say, the line width of the first transmission microstrip line 141 of the power division unit 140 of the next stage is greater than the line width of the first transmission microstrip line 141 of the power division unit 140 of the previous stage, and the line width of the second transmission microstrip line 142 of the power division unit 140 of the next stage is greater than the line width of the second transmission microstrip line 142 of the power division unit 140 of the previous stage.

[0146] In some examples, as shown in FIG12 , the grounded conductive plate 130 is located on a side of the conductive layer 120 away from the dielectric plate 110, and the power divider 100 further includes an air gap layer 150 located between the grounded conductive plate 130 and the conductive layer 120. In other words, an air gap layer 150 exists between the conductive layer 120 and the grounded conductive plate 130. Thus, the power divider can reduce transmission loss through the air gap layer.

[0147] In some examples, the air gap layer 150 has a thickness in the range of 0.20-2.00 mm, such as 0.25, 0.5, 0.75, 1.00, 1.25, 1.50, 1.75 mm.

[0148] In some examples, as shown in FIG12 , in each power splitter unit 140, the first transmission microstrip line 141 includes a plurality of first U-shaped bends 1415, and the second transmission microstrip line 142 includes a plurality of second U-shaped bends 1425. Thus, the power splitter can reduce the dimensions (transverse dimensions) of the first and second transmission microstrip lines in a second direction perpendicular to the first direction by providing the first and second U-shaped bends, thereby reducing the area occupied by the power splitter and improving its compactness.

[0149] In some examples, as shown in FIG12 , in the first-stage power splitting unit 140, the first transmission microstrip line 141 includes two first U-shaped bends 1415, and the second transmission microstrip line 142 includes two second U-shaped bends 1425. In the second-stage power splitting unit 140, the first transmission microstrip line 141 includes two first U-shaped bends 1415, and the second transmission microstrip line 142 includes two second U-shaped bends 1425. In the third-stage power splitting unit 140, the first transmission microstrip line 141 includes two first U-shaped bends 1415, and the second transmission microstrip line 142 includes two second U-shaped bends 1425. Although the first transmission microstrip lines in the three-stage power splitting units shown in FIG12 have the same number of first U-shaped bends, embodiments of the present disclosure include but are not limited to this, and the number of first U-shaped bends included in the first transmission microstrip lines of different power splitting units may also be different.

[0150] In some examples, as shown in FIG12 , in each power splitter unit, the corner of the first U-shaped bend 1415 comprises a right angle, and the corner of the second U-shaped bend 1425 comprises a right angle, thereby reducing manufacturing difficulty. It should be noted that the above-mentioned right angle means that the outer edge of the corner comprises a right angle.

[0151] FIG13 is a schematic structural diagram of another power divider provided in an embodiment of the present disclosure; FIG14 is a schematic structural diagram of another power divider provided in an embodiment of the present disclosure. As shown in Figures 13 and 14, the power divider 100 also includes a dielectric plate 110, a conductive layer 120 and a ground conductive plate 130; the conductive layer 120 is located on one side of the dielectric layer 110; the ground conductive plate 130 is spaced apart from the conductive layer 120; the conductive layer 120 includes an input microstrip line 121 and at least one power dividing unit 140 connected to the input microstrip line 121, each power dividing unit 140 includes a first transmission microstrip line 141 and a second transmission microstrip line 142, each power dividing unit 140 also includes a groove 114 located in the dielectric plate 110 and a resistive material block 144 located in the groove 114, the output end of the first transmission microstrip line 141 away from the input microstrip line 121 and the output end of the second transmission microstrip line 142 away from the input microstrip line 121 are electrically connected to the resistive material block 144, so that the resistive material block 144 is connected between the output end of the first transmission microstrip line 141 and the output end of the second transmission microstrip line 142 to serve as an isolation resistor. It should be noted that the first microstrip line and the second microstrip line are also quarter-wavelength impedance transformation lines.

[0152] As shown in FIG. 13 and FIG. 14 , in each power splitter unit 140 , the first transmission microstrip line 141 includes a plurality of first U-shaped bends 1415 , and the second transmission microstrip line 142 includes a plurality of second U-shaped bends 1425 .

[0153] In the power divider provided in the embodiments of the present disclosure, by forming a groove in a dielectric plate and placing a resistive material in the groove, and electrically connecting the output end of the first transmission microstrip line away from the input microstrip line and the output end of the second transmission microstrip line away from the input microstrip line to the resistive material block, the power divider can achieve the arrangement of an isolation resistor between the output end of the first transmission microstrip line and the output end of the second transmission microstrip line, thereby eliminating the need to use a welding process to weld the isolation resistor. As a result, the power divider can significantly reduce the complexity of the manufacturing process and reduce manufacturing costs. Furthermore, because the resistive material block is placed in the groove of the dielectric plate, the power divider can also provide the dielectric plate provided with the resistive material block with a flat structure, thereby improving the flatness of the power divider.

[0154] On the other hand, the power divider can also reduce the lateral dimensions of the first transmission microstrip line and the second transmission microstrip line respectively by providing the above-mentioned first U-shaped bend portion and the second U-shaped bend portion, thereby reducing the area occupied by the power divider and improving the compactness of the power divider.

[0155] In some examples, as shown in FIG13 , in a first-stage power splitter 140, the first transmission microstrip line 141 includes three first U-shaped bends 1415, and the second transmission microstrip line 142 includes three second U-shaped bends 1425. In a second-stage power splitter 140, the first transmission microstrip line 141 includes two first U-shaped bends 1415, and the second transmission microstrip line 142 includes two second U-shaped bends 1425. In other words, the number of U-shaped bends included in the first or second transmission microstrip line varies in different power splitters, allowing them to be configured based on the space occupied by the power splitter. Furthermore, compared to the power splitter shown in FIG1 , by providing a greater number of first U-shaped bends, the power splitter can further reduce the size of the first transmission microstrip line in a second direction perpendicular to the first direction.

[0156] In some examples, as shown in Figure 14, in the first-stage power splitting unit 140, the first transmission microstrip line 141 includes three first U-shaped bends 1415, and the second transmission microstrip line 142 includes three second U-shaped bends 1425; in the second-stage power splitting unit 140, the first transmission microstrip line 141 includes three first U-shaped bends 1415, and the second transmission microstrip line 142 includes three second U-shaped bends 1425.

[0157] In some examples, as shown in Figures 13 and 14 , in each power splitter unit 140, the corners of the first U-shaped bend 1415 comprise right angles, and the corners of the second U-shaped bend 1425 comprise right angles. It should be noted that the aforementioned right angles refer to the outer edges of the corners being right angles. This configuration eliminates the need for chamfering the U-shaped bends of the power splitter, thereby reducing manufacturing complexity.

[0158] In some examples, the material of the resistive material block is selected from one or more of a ceramic material, a semiconductor material, and a metal oxide material. The metal oxide material may include indium tin oxide, tin oxide, antimony oxide, etc.; the semiconductor material may be silicon, germanium, etc.

[0159] In some examples, as shown in Figures 13 and 14 , the orthographic projection of the resistive material block 144 on the dielectric plate 110 is rectangular, facilitating fabrication. The orthographic projection of each first sub-resistive material 144A on the dielectric plate 110 is also rectangular. Of course, embodiments of the present disclosure include but are not limited to these. The orthographic projection of the resistive material block on the dielectric plate may also have other suitable shapes, and the orthographic projection of the first sub-resistive material on the dielectric plate may also have other suitable shapes.

[0160] In some examples, the resistive material block 144 may be formed by a sputtering process, a deposition process, an evaporation process, an electroplating process, or the like.

[0161] In some examples, as shown in Figures 13 and 14 , the grounded conductive plate 130 is located on a side of the conductive layer 120 away from the dielectric plate 110, and the power divider 100 further includes an air gap layer 150 located between the grounded conductive plate 130 and the conductive layer 120. In other words, an air gap layer 150 exists between the conductive layer 120 and the grounded conductive plate 130. Thus, the power divider can reduce transmission loss through the air gap layer.

[0162] In some examples, the air gap layer 150 has a thickness in the range of 0.20-2.00 mm, such as 0.25, 0.5, 0.75, 1.00, 1.25, 1.50, 1.75 mm.

[0163] FIG15 is a schematic structural diagram of another power divider provided in accordance with an embodiment of the present disclosure; FIG16 is a schematic cross-sectional diagram of another power divider provided in accordance with an embodiment of the present disclosure. As shown in Figures 15 and 16, the power divider 100 also includes a dielectric plate 110, a conductive layer 120 and a ground conductive plate 130; the conductive layer 120 is located on one side of the dielectric layer 110; the ground conductive plate 130 is spaced apart from the conductive layer 120; the conductive layer 120 includes an input microstrip line 121 and at least one power dividing unit 140 connected to the input microstrip line 121, each power dividing unit 140 includes a first transmission microstrip line 141 and a second transmission microstrip line 142, each power dividing unit 140 also includes a groove 114 located in the dielectric plate 110 and a resistive material block 144 located in the groove 114, the output end of the first transmission microstrip line 141 away from the input microstrip line 121 and the output end of the second transmission microstrip line 142 away from the input microstrip line 121 are electrically connected to the resistive material block 144, so that the resistive material block 144 is connected between the output end of the first transmission microstrip line 141 and the output end of the second transmission microstrip line 142 to serve as an isolation resistor. It should be noted that the first microstrip line and the second microstrip line are also quarter-wavelength impedance transformation lines.

[0164] In some examples, as shown in Figures 15 and 16 , the grounded conductive plate 130 is located on the side of the dielectric plate 110 away from the conductive layer 120 , and the grounded conductive plate 130 is placed in contact with the dielectric plate 110 . In other words, the power divider does not include the aforementioned gap layer. Therefore, by placing the grounded conductive plate in direct contact with the dielectric plate, the power divider can be assembled more easily.

[0165] FIG17 is a schematic structural diagram of another power divider provided in accordance with an embodiment of the present disclosure; FIG18 is a schematic cross-sectional diagram of another power divider provided in accordance with an embodiment of the present disclosure. As shown in Figures 17 and 18, the power divider 100 also includes a dielectric plate 110, a conductive layer 120 and a grounded conductive plate 130; the conductive layer 120 is located on one side of the dielectric layer 110; the grounded conductive plate 130 is spaced apart from the conductive layer 120; the conductive layer 120 includes an input microstrip line 121 and at least one power dividing unit 140 connected to the input microstrip line 121, each power dividing unit 140 includes a first transmission microstrip line 141 and a second transmission microstrip line 142, each power dividing unit 140 also includes a groove 114 located in the dielectric plate 110 and a resistive material block 144 located in the groove 114, the output end of the first transmission microstrip line 141 away from the input microstrip line 121 and the output end of the second transmission microstrip line 142 away from the input microstrip line 121 are electrically connected to the resistive material block 144, so that the resistive material block 144 is connected between the output end of the first transmission microstrip line 141 and the output end of the second transmission microstrip line 142 to serve as an isolation resistor. It should be noted that the first microstrip line and the second microstrip line are also quarter-wavelength impedance transformation lines.

[0166] In some examples, as shown in Figures 17 and 18, the power divider 100 further includes a dielectric layer 160 located between the conductive layer 120 and the grounded conductive plate 130. In this way, the power divider can be assembled with two dielectric layers, which can also reduce the difficulty of assembly.

[0167] In some examples, the loss tangent of the dielectric layer should be smaller than the loss tangent of the upper dielectric plate, thereby enabling the power divider to have lower transmission loss.

[0168] Figure 19 is a schematic diagram of a power splitter assembly provided in one embodiment of the present disclosure. As shown in Figure 19, the power splitter assembly 200 includes multiple power splitter groups 210 arranged in series. Each power splitter group 210 includes at least one power splitter 100 provided in accordance with any of the aforementioned examples. As a result, the power splitter assembly has low manufacturing costs and high performance. It should be noted that the aforementioned power splitter assembly can also be referred to as a power splitter network.

[0169] In some examples, as shown in FIG19 , the number of power dividers 100 in a subsequent power divider group 210 is twice the number of power dividers 100 in a previous power divider group 210, and the input end of the power divider 100 in the subsequent power divider group 210 is connected to the output end of the first transmission microstrip line 141 or the output end of the second transmission microstrip line 142 of the last-stage power dividing unit 140 of a power divider 100 in the previous power divider group 210. Thus, the power divider assembly can achieve one-to-four, one-to-eight, one-to-sixteen, and so on (the number of divisions is 2 raised to the power of p, where p is a positive integer greater than or equal to 1 and represents the number of power divider groups).

[0170] At least one embodiment of the present disclosure further provides a method for manufacturing an antenna. The antenna includes a power divider according to any one of the above items, and the manufacturing method includes the following steps:

[0171] Step S101: providing a dielectric plate and forming grooves on the dielectric plate.

[0172] For example, the grooves may be formed on the dielectric plate by etching, etc. Of course, the embodiments of the present disclosure include but are not limited to the above, and other processes may also be used to form the grooves on the dielectric plate.

[0173] Step S102: forming a resistance material block in the groove.

[0174] For example, the resistive material block may be formed in the groove by a deposition process, an evaporation process, a sputtering process, or the like.

[0175] Step S103: forming a conductive layer on a dielectric plate on which a resistance material block is formed, the conductive layer including an input microstrip line and at least one power division unit connected to the input microstrip line, each power division unit including a first transmission microstrip line and a second transmission microstrip line, an output end of the first transmission microstrip line away from the input microstrip line and an output end of the second transmission microstrip line away from the input microstrip line being electrically connected to the resistance material block.

[0176] Step S104: providing a grounded conductive plate, and combining the grounded conductive plate with a dielectric plate having a conductive layer formed thereon, such that the conductive layer and the grounded conductive plate are spaced apart, to form the power divider.

[0177] In the antenna manufacturing method provided in the embodiments of the present disclosure, a groove is formed in a dielectric plate, a resistive material is formed in the groove, and then a conductive layer is formed. The output end of the first transmission microstrip line, which is remote from the input microstrip line, and the output end of the second transmission microstrip line, which is remote from the input microstrip line, are electrically connected to the resistive material block. This power divider can provide an isolation resistor between the output ends of the first and second transmission microstrip lines. This manufacturing method eliminates the need for soldering the isolation resistors and simplifies the manufacturing process, significantly reducing manufacturing complexity and costs.

[0178] On the other hand, since the resistance material block is arranged in the groove of the dielectric plate, the power divider can also make the dielectric plate provided with the resistance material block have a flat structure, thereby improving the flatness of the power divider, thereby facilitating integration into other devices, reducing the volume of the device and improving the compactness of the device.

[0179] In some examples, forming the resistive material block in the groove includes forming the resistive material block in the groove such that the height difference between a surface of the resistive material block away from the bottom of the groove and a surface of the dielectric plate is less than 1 / 10 of the thickness of the first transmission microstrip line or the second transmission microstrip line, thereby enabling the power divider to have high flatness. It should be noted that the thickness of the first transmission microstrip line or the second transmission microstrip line may be a dimension of the first transmission microstrip line or the second transmission microstrip line in a direction perpendicular to the dielectric plate.

[0180] In some examples, forming a resistive material block in the groove includes: forming a resistive material block in the groove, and making the surface of the resistive material block away from the bottom of the groove flush with the surface of the dielectric plate, that is, the height difference between the surface of the resistive material block away from the bottom of the groove and the surface of the dielectric plate is zero, thereby further improving the flatness of the power divider.

[0181] For example, in the antenna manufacturing method provided in one embodiment of the present disclosure, the antenna also includes a functional device, the functional device includes a semiconductor layer, and forming a resistive material block in a groove includes: using the same material layer to form the resistive material block and the semiconductor layer of the functional device in the groove through the same patterning process. Since the antenna manufacturing method can use semiconductor materials to make the resistive material block, when the same material layer is used to form the resistive material block and the semiconductor layer of the functional device in the groove through the same patterning process, the manufacturing method can further save process steps, reduce the mask process of the antenna, and thus reduce the manufacturing cost of the antenna. For example, the above-mentioned functional device can be a liquid crystal phase shifter, the material of the above-mentioned semiconductor layer can be an oxide semiconductor, such as indium tin oxide (ITO), and the above-mentioned semiconductor layer can be a signal electrode or a ground electrode of the liquid crystal phase shifter.

[0182] For example, the functional device may be a liquid crystal display panel, the semiconductor layer may be made of an oxide semiconductor, such as indium tin oxide (ITO), and the semiconductor layer may be a pixel electrode or a common electrode of the liquid crystal display panel.

[0183] There are a few points to note:

[0184] (1) The drawings of the embodiments of the present disclosure only relate to the structures related to the embodiments of the present disclosure, and other structures may refer to conventional designs.

[0185] (2) Unless there is any conflict, the features of the same embodiment and different embodiments of the present disclosure may be combined with each other.

[0186] The above are only specific embodiments of the present disclosure, but the scope of protection of the present disclosure is not limited thereto. Any changes or substitutions that can be easily conceived by a person skilled in the art within the technical scope disclosed in this disclosure should be included in the scope of protection of the present disclosure. Therefore, the scope of protection of the present disclosure should be based on the scope of protection of the claims.

Claims

1. A power divider, comprising: Dielectric plate; A conductive layer, located on one side of the dielectric layer; A grounded conductive plate is spaced apart from the conductive layer. The conductive layer includes an input microstrip line and at least one power division unit connected to the input microstrip line, each of the power division units includes a first transmission microstrip line and a second transmission microstrip line. Each of the power division units also includes a groove located in the dielectric plate and a resistance material block located in the groove, and the output end of the first transmission microstrip line away from the input microstrip line and the output end of the second transmission microstrip line away from the input microstrip line are electrically overlapped with the resistance material block.

2. The power divider according to claim 1, wherein: A height difference between a surface of the resistance material block away from the bottom of the groove and a surface of the dielectric plate is less than 1 / 10 of a thickness of the first transmission microstrip line or the second transmission microstrip line.

3. The power divider according to claim 2, wherein: A surface of the resistance material block away from the bottom of the groove is flush with a surface of the dielectric plate.

4. The power divider according to claim 1, wherein: The material of the resistance material block is selected from one or more of ceramic materials, semiconductor materials and metal oxide materials.

5. The power divider according to any one of claims 1 to 4, wherein: The resistance material block includes a plurality of first sub-resistance material blocks connected to each other, and different first sub-resistance material blocks are made of different materials.

6. The power divider according to claim 5, wherein: The input microstrip line and the at least one power division unit are arranged along a first direction, and the plurality of first sub-resistance material blocks are arranged along the first direction.

7. The power divider according to claim 6, wherein: The resistivity of the plurality of first sub-resistance material blocks gradually decreases along the first direction.

8. The power divider according to any one of claims 1 to 7, wherein: The groove includes a plurality of sub-grooves that are interconnected, and different sub-grooves have different depths.

9. The power divider according to claim 8, wherein: The resistance material block includes a plurality of second sub-resistance material blocks corresponding to the plurality of sub-grooves one by one, and surfaces of the plurality of second sub-resistance material blocks away from the bottoms of the grooves are flush.

10. The power divider according to claim 8, wherein: The input microstrip line and the at least one power division unit are arranged along a first direction, and the plurality of sub-grooves are arranged along the first direction.

11. The power divider according to any one of claims 1 to 10, wherein: The at least one power division unit comprises N power division units arranged in series, The first transmission microstrip line of the power division unit of the next stage is electrically connected to the output end of the first transmission microstrip line of the power division unit of the previous stage, The second transmission microstrip line of the power division unit of the next stage is electrically connected to the output end of the second transmission microstrip line of the power division unit of the previous stage, N is a positive integer greater than or equal to 2.

12. The power divider according to claim 11, wherein: The line width of the first transmission microstrip line of the power division unit of the next stage is greater than the line width of the first transmission microstrip line of the power division unit of the previous stage, The line width of the second transmission microstrip line of the power division unit of the next stage is greater than the line width of the second transmission microstrip line of the power division unit of the previous stage.

13. The power divider according to any one of claims 1 to 12, wherein: In each of the power division units, the first transmission microstrip line includes a plurality of first U-shaped bends, and the second transmission microstrip line includes a plurality of second U-shaped bends.

14. The power divider according to claim 13, wherein: The number of the first U-shaped bending portions included in the first transmission microstrip line in at least one of the power dividers is different from the number of the first U-shaped bending portions included in the first transmission microstrip line in the other power dividers.

15. The power divider according to claim 12, wherein: The corners of the first U-shaped bending portion include rounded corners, folded corners or right angles, and the corners of the second U-shaped bending portion include rounded corners, folded corners or right angles.

16. The power divider according to any one of claims 1 to 15, wherein: In each of the power division units, the line width of the first transmission microstrip line is not equal to the line width of the second transmission microstrip line.

17. The power divider according to any one of claims 1 to 16, wherein: The grounded conductive plate is located on a side of the conductive layer away from the dielectric plate. The power divider further includes an air gap layer located between the grounded conductive plate and the conductive layer.

18. The power divider according to claim 17, wherein: The thickness of the air gap layer ranges from 0.20 to 2.00 mm.

19. The power divider according to any one of claims 1 to 18, wherein: The grounding conductive plate is located at a side of the dielectric plate away from the conductive layer, and the grounding conductive plate is arranged in contact with the dielectric plate.

20. A power divider assembly, comprising a plurality of power divider groups arranged in series, each of the power divider groups comprising at least one power divider according to any one of claims 1-19.

21. The power divider assembly according to claim 20, wherein: The number of the power dividers in the latter power divider group is twice the number of the power dividers in the former power divider group, The input end of the power divider in the latter power divider group is connected to the output end of the first transmission microstrip line or the output end of the second transmission microstrip line of one of the power dividers in the former power divider group.

22. A method for manufacturing an antenna, wherein: The antenna comprises a power divider according to any one of claims 1 to 19, and the manufacturing method comprises: forming the groove on the dielectric plate; forming the resistive material block in the groove; forming the conductive layer on the dielectric plate on which the resistance material block is formed, and making the output end of the first transmission microstrip line and the output end of the second transmission microstrip line electrically overlap with the resistance material block; and The grounded conductive plate is combined with a dielectric plate on which the conductive layer is formed, so that the conductive layer and the grounded conductive plate are spaced apart from each other.

23. The method according to claim 22, wherein: The antenna further includes a functional device, the functional device includes a semiconductor layer, and forming the resistance material block in the groove includes: The resistance material block and the semiconductor layer of the functional device are formed in the groove by using the same material layer and through the same patterning process.

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