Substrate treatment method

Abstract

The present invention relates to a substrate treatment method and, more specifically, to a substrate treatment method by which a gap formed on a substrate can be filled with a deposition material. The substrate treatment method according to an embodiment of the present invention comprises the steps of: performing a first deposition process of depositing a thin film on a substrate on which a gap is formed; performing a reaction process on the substrate; determining whether the gap formed on the substrate satisfies a gap fill condition; and determining whether the thin film deposited on the substrate satisfies a thin film thickness condition, wherein the first deposition process includes the steps of: supplying a source gas; purging the source gas; supplying a reaction gas; and purging the reaction gas, and the reaction process includes a process of suppressing a thin film from being deposited on the surface of the substrate.

Description

Substrate processing method

[0001] The present invention relates to a substrate processing method, and more particularly, to a substrate processing method capable of filling a gap formed in a substrate with a deposition material.

[0002] Chemical vapor deposition (CVD) or atomic layer deposition (ALD) can be used to deposit a thin film on a substrate. In the case of chemical vapor deposition or atomic layer deposition, a thin film can be formed by a source gas causing a chemical reaction on the surface of the substrate. In particular, in the case of atomic layer deposition, since a single layer of the source gas attached to the surface of the substrate forms a thin film, it is possible to form a thin film with a thickness similar to the diameter of an atom.

[0003] To expand the processing temperature range, plasma-enhanced chemical vapor deposition (PECVD) or plasma-enhanced atomic layer deposition (PEALD) can be used. Because PECVD and PEALD can be processed at lower temperatures than chemical vapor deposition and ALD, the physical properties of the thin film can be improved.

[0004] Thin films can also be used to form interlayer insulating films. However, if the gaps between wires are small, proper thin film formation may not occur due to the deposition material not easily penetrating the gaps. For example, if the gap entrance is narrow, the film material formed around the entrance may prevent the deposition material from penetrating into the gap, resulting in the formation of a void.

[0005] Therefore, there is a need for an invention that enables the gap to be filled by allowing the deposition material to penetrate into the inside of the gap.

[0006] The problem to be solved by the present invention is to provide a substrate processing method capable of filling a gap formed in a substrate with a deposition material.

[0007] The tasks of the present invention are not limited to the tasks mentioned above, and other tasks not mentioned will be clearly understood by those skilled in the art from the description below.

[0008] A substrate processing method according to an embodiment of the present invention includes a step of performing a first deposition process for depositing a thin film on a substrate having a gap formed therein, a step of performing a reaction process on the substrate, a step of determining whether a gap fill condition for the gap formed on the substrate is satisfied, and a step of determining whether a thin film thickness condition for the thin film deposited on the substrate is satisfied, wherein the first deposition process includes a step of supplying a source gas, a step of purging the source gas, a step of supplying a reaction gas, and a step of purging the reaction gas, and the reaction process includes a step of suppressing deposition of a thin film on a surface of the substrate.

[0009] A step of performing an additional first deposition process is included between the step of determining whether the gap fill condition is satisfied and the step of determining whether the thin film thickness condition is satisfied, and the step of performing the additional first deposition process is performed when the gap fill condition is satisfied in the step of determining whether the gap fill condition is satisfied.

[0010] The step of determining whether the above thin film thickness condition is satisfied includes a step of comparing the thickness of the thin film formed on the surface of the substrate with a preset critical thickness, and if the thin film thickness condition is not satisfied, the additional first deposition process is performed.

[0011] In the step of determining whether the above gap fill condition is satisfied, whether the gap fill condition is satisfied is determined using the ratio of the thickness of the thin film formed on the side wall of the gap to the thickness of the thin film formed on the surface of the substrate, and if the ratio exceeds 125%, the gap fill condition is determined to be satisfied.

[0012] In the step of determining whether the above gap fill condition is satisfied, whether the gap fill condition is satisfied is determined using the ratio of the thickness of the thin film formed on the bottom surface of the gap to the depth of the gap, and if the ratio exceeds 80%, the gap fill condition is determined to be satisfied.

[0013] In the step of determining whether the above gap fill condition is satisfied, if the gap fill condition is not satisfied, the first deposition process and the reaction process are repeatedly performed.

[0014] The above first deposition process is performed using a hollow cathode plasma (HCP) method, and the above reaction process is performed using a capacitively coupled plasma (CCP) method.

[0015] A step of performing a second deposition process is included between the step of determining whether the gap fill condition is satisfied and the step of determining whether the thin film thickness condition is satisfied, and the second deposition process is performed when the gap fill condition is satisfied in the step of determining whether the gap fill condition is satisfied.

[0016] The second deposition process includes a step of supplying a source gas, a step of purging the source gas, a step of supplying a reaction gas, and a step of purging the reaction gas, and the second deposition process includes a step of depositing a thin film on the substrate at a faster rate than the first deposition process.

[0017] The first deposition process is performed using a hollow cathode plasma (HCP) method, and the reaction process and the second deposition process are performed using a capacitively coupled plasma (CCP) method.

[0018] Specific details of other embodiments are included in the detailed description and drawings.

[0019] According to the substrate processing method according to the embodiment of the present invention as described above, since a deposition material is filled in a gap formed in a substrate to form a thin film, there is an advantage in that an empty space is prevented from being formed in the gap.

[0020] FIG. 1 is a drawing showing a substrate processing device according to an embodiment of the present invention.

[0021] Figure 2 is a drawing showing that the substrate support has moved into the process processing space.

[0022] Figure 3 is a drawing showing the connection of a gas supply unit and a plasma generation unit.

[0023] Figure 4 is a drawing showing a plasma generator equipped with supply ports having different diameter sections.

[0024] Figure 5 is a drawing showing an enlarged view of the plasma generation unit and the process material supply unit.

[0025] Figure 6 is a plan view of the process material supply unit.

[0026] Figure 7 is a drawing for explaining the process cycle.

[0027] Figure 8 is a drawing showing that a process gas or first plasma is supplied to a process chamber.

[0028] Figure 9 is a drawing showing that a second plasma or a third plasma is supplied to the process chamber.

[0029] Fig. 10 is a drawing showing a plasma generation unit and a process material supply unit according to another embodiment of the present invention.

[0030] Figure 11 is a drawing showing a gap formed in a substrate.

[0031] Figure 12 is a drawing showing a thin film being deposited on a substrate.

[0032] Figure 13 is a drawing showing the formation of a third process material on a substrate.

[0033] Figure 14 is a drawing showing a thin film being deposited on a substrate on which a third process material is formed.

[0034] Figure 15 is a drawing for explaining the process of depositing a thin film on a substrate.

[0035] Figure 16 is a flowchart showing a substrate processing method according to an embodiment of the present invention.

[0036] Figure 17 is a drawing for explaining process conditions.

[0037] Figure 18 is a flowchart showing a substrate processing method according to another embodiment of the present invention.

[0038] Figure 19 is a flow chart showing the first deposition process and reaction process.

[0039] Figure 20 is a flowchart showing the second deposition process.

[0040] Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the attached drawings. The advantages and features of the present invention, and methods for achieving them, will become clear with reference to the embodiments described in detail below together with the attached drawings. However, the present invention is not limited to the embodiments disclosed below, but can be implemented in various different forms. These embodiments are provided only to ensure that the disclosure of the present invention is complete and to fully inform those skilled in the art of the scope of the invention, and the present invention is defined only by the scope of the claims. Like reference numerals refer to like elements throughout the specification.

[0041] Unless otherwise defined, all terms (including technical and scientific terms) used herein may be used in their common sense to those of ordinary skill in the art to which the present invention pertains. Furthermore, terms defined in commonly used dictionaries are not to be interpreted ideally or excessively unless explicitly and specifically defined otherwise.

[0042] FIG. 1 is a drawing showing a substrate processing device according to an embodiment of the present invention, and FIG. 2 is a drawing showing a substrate support part moved into a process processing space.

[0043] Referring to FIGS. 1 and 2, a substrate processing device (10) according to an embodiment of the present invention is configured to include a process chamber (100), a substrate support unit (200), an elevation unit (300), a gas supply unit (400), a gas pressurization unit (500), a plasma generation unit (600), a process material supply unit (700), a first power supply unit (810), a second power supply unit (820), and a control unit (900).

[0044] A substrate processing device (10) according to an embodiment of the present invention can deposit a thin film on a substrate (W). For example, the substrate processing device (10) can deposit a thin film on the substrate (W) using plasma enhanced atomic layer deposition (PEALD).

[0045] The process chamber (100) may include a chamber body (110) and a chamber lid (120). The chamber body (110) provides a space for accommodating various components for processing a substrate (W), and the chamber lid (120) may seal an upper opening of the chamber body (110). The chamber lid (120) may support a plasma generation unit (600) and a process material supply unit (700). For example, the plasma generation unit (600) and the process material supply unit (700) may be stacked and provided on the chamber lid (120).

[0046] The process chamber (100) can provide a process processing space (SP1) and a substrate placement space (SP2). The process processing space (SP1) represents a space for processing a substrate (W), and the substrate placement space (SP2) represents a space for placement and movement of the substrate (W). The process processing space (SP1) and the substrate placement space (SP2) can be formed by combining the chamber body (110) and the chamber lid (120). Among the internal spaces of the process chamber (100), an upper space may correspond to the process processing space (SP1), and a lower space may correspond to the substrate placement space (SP2).

[0047] A substrate entrance (130) for entrance and exit of a substrate (W) may be formed on one side of the process chamber (100). For example, the substrate entrance (130) may be formed on one side of the chamber body (110). The substrate (W) may be introduced into or taken out of the process chamber (100) through the substrate entrance (130).

[0048] The process chamber (100) may be equipped with a shutter (140). The shutter (140) may open or close the substrate entrance (130). When the shutter (140) opens the substrate entrance (130), the substrate (W) may be loaded or unloaded through the substrate entrance (130). When a process for the substrate (W) is in progress, the shutter (140) may close the substrate entrance (130) to block the interior of the process chamber (100) from the exterior.

[0049] The substrate support (200) may have a mounting surface on which a substrate (W) can be mounted. A process may be performed on the substrate (W) mounted on the mounting surface of the substrate support (200). The substrate support (200) may heat the substrate (W). To this end, a heater (not shown) may be provided inside the substrate support (200). Heat emitted from the heater may be transferred to the substrate (W) through the body of the substrate support (200). The heater may serve as an electrode for forming an electric field. As described below, when RF power is supplied to the process material supply unit (700), an electric field may be formed between the process material supply unit (700) and the heater.

[0050] The substrate support (200) can be raised to a process processing space (SP1) where a process for the substrate (W) is performed, or lowered to a substrate placement space (SP2) where placement and movement of the substrate (W) are performed. The elevating unit (300) can generate a driving force to move the substrate support (200) in the up and down direction. Fig. 1 illustrates the substrate support (200) being lowered to the substrate placement space (SP2), and Fig. 2 illustrates the substrate support (200) being raised to the process processing space (SP1).

[0051] The gas supply unit (400) serves to supply process gas to the process chamber (100). Specifically, the gas supply unit (400) can supply process gas to the plasma generation unit (600). To this end, the gas supply unit (400) can be connected to the plasma generation unit (600). In order to receive process gas from the gas supply unit (400), the plasma generation unit (600) can be equipped with a supply port (630) for receiving process gas.

[0052] The gas pressurization unit (500) can pressurize the process gas and supply it to the gas supply unit (400). A plurality of gas transfer lines (510) can be connected to the gas pressurization unit (500). Different process gases can be transported through the plurality of gas transfer lines (510). The gas pressurization unit (500) can individually pressurize the process gases transported through the plurality of gas transfer lines (510) and supply them to the gas supply unit (400). The process gas can be injected into the gas supply unit (400) at a predetermined pressure. Accordingly, the gas supply unit (400) can supply the process gas to the plasma generation unit (600) at a uniform pressure.

[0053] The gas pressurization unit (500) may include a gas pressurization tank (520). A plurality of gas pressurization tanks (520) may be provided. For example, a gas pressurization tank (520) may be provided for each of a plurality of gas transfer lines (510). The gas pressurization tank (520) may pressurize and discharge process gas injected through the gas transfer line (510).

[0054] The plasma generator (600) can convert process gas into process material in a plasma state. The process material may include radicals, ions, and electrons.

[0055] A plasma generation unit (600) may be provided in the process chamber (100). Specifically, the plasma generation unit (600) may be provided in the chamber lid (120) and may convert the process gas supplied from the gas supply unit (400) into a plasma state.

[0056] The plasma generation unit (600) may include a first diffusion space (610) and a through hole (620). The first diffusion space (610) may be provided for diffusion of a process gas supplied through a supply port (630). The process gas supplied from the gas supply unit (400) may be diffused in the first diffusion space (610).

[0057] The through hole (620) can connect the first diffusion space (610) and the process material supply unit (700). The process gas diffused in the first diffusion space (610) can pass through the through hole (620) and be supplied to the process material supply unit (700).

[0058] In the present invention, the plasma generation unit (600) can convert the process gas into a plasma state using a hollow cathode plasma (HCP) method. The process gas moving from the first diffusion space (610) toward the process material supply unit (700) can be converted into a plasma state in the through hole (620) by the RF power supplied to the plasma generation unit (600). As described below, when RF power is supplied from the first power supply unit (810) to the plasma generation unit (600), an electric field can be formed inside the through hole (620). The process gas passing through the through hole (620) can be converted into a plasma state by the electric field formed inside the through hole (620).

[0059] The plasma generation unit (600) may be arranged above the process material supply unit (700). The plasma generation unit (600) may supply the process gas injected into the process chamber (100) to the process material supply unit (700), or may convert the process gas injected into the process chamber (100) into a plasma state and supply it to the process material supply unit (700). The plasma conversion by the plasma generation unit (600) may be selectively performed. When RF power is not supplied to the plasma generation unit (600), the plasma generation unit (600) may supply the process gas to the process material supply unit (700), and when RF power is supplied to the plasma generation unit (600), the plasma generation unit (600) may supply the process material generated by converting the process gas into a plasma state to the process material supply unit (700).

[0060] The process material supply unit (700) serves to supply the process gas or process material supplied from the plasma generator (600) to the substrate (W). The process material supply unit (700) can supply the process gas or process material in a uniform distribution over the entire surface area of ​​the substrate (W).

[0061] In the present invention, the process gas may include a source gas, a source purge gas, a reaction gas, a reaction purge gas, a suppressor gas, and a suppressor purge gas. The source gas used for deposition of the thin film may include a silicon precursor. For example, the source gas may include at least one of hexachlorodisilane (HCDS), diiodosilane (DIS), diisoprophylaminosilane (DIPAS), trisdimethylaminosilane (TDMAS), and bistertiarybutylaminosilane (BTBAS). The reaction gas used for deposition of the thin film may include at least one of ammonia (NH3) and oxygen (O2). The suppressor gas used for suppressing deposition of the thin film may include at least one of hydrogen (H2) and ammonia (NH3). The source purge gas, the reaction purge gas, and the suppression purge gas may include at least one of argon (Ar), nitrogen (N2), and hydrogen (H2).

[0062] The source gas, the source purge gas, the reaction gas, the reaction purge gas, the suppression gas, and the suppression purge gas may be sequentially supplied from the process material supply unit (700), or at least some of them may be supplied simultaneously. The source gas and the reaction gas may collide with each other and react after being supplied from the process material supply unit (700). Then, the source gas activated by the reaction gas may contact the substrate (W) to perform a process treatment on the substrate (W). For example, the activated source gas may be deposited as a thin film on the substrate (W). Here, the reaction gas may be converted into a process material in a plasma state and react with the source gas. The plasma generation unit (600) described above may convert the reaction gas into a process material and supply it to the process material supply unit (700), and as the process material supply unit (700) supplies the process material to the substrate (W), deposition of a thin film may be performed.

[0063] The process material supply unit (700) may include a second diffusion space (710) and a supply hole (720). The second diffusion space (710) may be provided for the diffusion of a process gas or process material. The process gas or process material supplied from the plasma generation unit (600) may be diffused in the second diffusion space (710).

[0064] The supply hole (720) can connect the second diffusion space (710) and the process processing space. The supply hole (720) can be formed toward the substrate (W). The process gas or process material diffused in the second diffusion space (710) can pass through the supply hole (720) and be supplied to the substrate (W).

[0065] The first power supply unit (810) can supply RF power to the plasma generation unit (600). When RF power is supplied to the plasma generation unit (600), an electric field is formed in the through hole (620), and the process gas passing through the through hole (620) can be converted into a plasma state. The process material generated in the plasma generation unit (600) can be supplied to the substrate (W) from the process material supply unit (700) and used for deposition of a thin film. Hereinafter, the process material generated by the plasma generation unit (600) is referred to as the first process material.

[0066] The second power supply unit (820) can supply RF power to the process material supply unit (700). The process material supply unit (700) can generate the process material using a capacitively coupled plasma (CCP) method. The process material supply unit (700) may have a separate electrode plate (not shown) that receives RF power, or may function as an electrode that receives RF power on its own. As described above, the substrate support unit (200) may include a heater that functions as an electrode. When RF power is supplied to the process material supply unit (700), an electric field may be formed between the process material supply unit (700) and the heater of the substrate support unit (200). The process gas introduced into the process chamber (100) is converted into a plasma state by the electric field formed by the supply of RF power, thereby generating the process material, and the process material may react with the surface of the substrate (W) to perform a process treatment on the substrate (W).

[0067] The second power supply unit (820) can supply RF power to the process material supply unit (700) to convert the process gas for depositing a thin film on the substrate (W) into a plasma state, or supply RF power to the process material supply unit (700) to convert the process gas for suppressing the deposition of a thin film on the substrate (W) into a plasma state. The process gas injected into the process treatment space is converted into a plasma state by the electric field formed between the process material supply unit (700) and the substrate support unit (200), and the process material generated by this conversion can be used for thin film deposition on the substrate (W) or for suppressing thin film deposition. Hereinafter, among the process materials generated by the RF power supply of the second power supply unit (820), the process material used for thin film deposition is referred to as a second process material, and the process material used for suppressing thin film deposition is referred to as a third process material.

[0068] The process chamber (100) may be equipped with a gas port (150). The gas port (150) may be disposed on the inner lower surface of the chamber body (110). For example, the gas port (150) may be disposed in an area vertically overlapping the substrate support (200) to effectively discharge process byproducts. Meanwhile, the gas port (150) being disposed on the inner lower surface of the chamber body (110) is exemplary, and according to some embodiments of the present invention, the gas port (150) may be disposed on the inner side surface of the chamber body (110). For example, when the substrate support (200) is raised to the process processing space (SP1), the gas port (150) may be disposed in an area between the substrate support (200) and the process material supply unit (700). Hereinafter, the gas port (150) disposed on the inner lower surface of the chamber body (110) will be mainly described.

[0069] The gas port (150) may provide a discharge path for process byproducts. Here, the process byproducts may include all substances that must be discharged from the process chamber (100), such as remaining gases among the process gases supplied to the process chamber (100) that are not used for forming a thin film. For example, the process byproducts may include a source gas, a reaction gas, a suppression gas, a source purge gas, a reaction purge gas, and a suppression purge gas.

[0070] An exhaust line (160) may be connected to the gas port (150). The exhaust line (160) may provide a transport path for process byproducts introduced through the gas port (150). A pressure pump (170) may be provided in the exhaust line (160). The pressure pump (170) may pressurize the internal space of the exhaust line (160) so that the process byproducts introduced into the gas port (150) may be transported through the exhaust line (160). The process byproducts transported through the exhaust line (160) may be discharged from the process chamber (100).

[0071] The control unit (900) can perform overall control of the substrate processing device (10). For example, the control unit (900) can operate the shutter (140) to open and close the substrate entrance (130), or control the lifting unit (300) to move the substrate support unit (200). In addition, the control unit (900) can control the gas supply unit (400) to supply the process gas to the process chamber (100). At least one process gas selected from among a source gas, a source purge gas, a reaction gas, and a reaction purge gas can be supplied to the process chamber (100) under the control of the control unit (900).

[0072] The control unit (900) can also control the supply of RF power by the first power supply unit (810) and the second power supply unit (820). The control unit (900) can individually control the first power supply unit (810) and the second power supply unit (820). For example, the control unit (900) can individually select and apply the power amount and power supply time of the first power supply unit (810) and the power amount and power supply time of the second power supply unit (820).

[0073] Fig. 3 is a drawing showing a gas supply unit and a plasma generation unit connected, and Fig. 4 is a drawing showing a plasma generation unit equipped with supply ports having different diameter sections.

[0074] Referring to FIG. 3, the gas supply unit (400) and the plasma generation unit (600) can be connected by a first supply line (410) and a second supply line (420).

[0075] The first supply line (410) may provide a transport path for source gas and source purge gas, and the second supply line (420) may provide a transport path for reaction gas, reaction purge gas, suppression gas, and suppression purge gas. Here, the source gas and reaction gas may be used for deposition of a thin film, and the suppression gas may be used for suppressing deposition of the thin film.

[0076] The supply port (630) may be formed to protrude upward from the body of the plasma generator (600). The first supply line (410) and the second supply line (420) may be connected to the supply port (630). The second supply line (420) may be connected to an upper portion of the supply port (630) compared to the first supply line (410). For example, the second supply line (420) may be connected to an upper end of the supply port (630). The process gas supplied to the upper end of the supply port (630) may pressurize the process gas remaining therebelow and inject it into the plasma generator (600).

[0077] The supply port (630) may be provided in the shape of a cylinder. The diameter (D1) of the supply port (630) may be formed to be smaller than the length (H1). Specifically, considering the flow characteristics of the process gas, the diameter (D1) of the supply port (630) may be determined in a range of about 3 to 20% of the length (H1). For example, when the diameter (D1) of the supply port (630) is about 5 to 20 mm, the length (H1) may be determined in a range of 120 to 150 mm.

[0078] Meanwhile, according to some embodiments of the present invention, as illustrated in FIG. 4, the supply port (630) may include a first supply port (631) and a second supply port (632). The first supply port (631) is connected to the first supply line (410) and the second supply line (420) to receive process gas from the gas supply unit (400). The second supply port (632) delivers the process gas supplied to the first supply port (631) to the first diffusion space (610).

[0079] The diameter (D2) of the second supply port (632) may be formed smaller than the diameter (D1) of the first supply port (631). Specifically, considering the flow characteristics of the process gas, the diameter (D2) of the second supply port (632) may be about 50 to 75% of the diameter (D1) of the first supply port (631). For example, the diameter (D1) of the first supply port (631) may be about 5 to 20 mm, and the diameter (D2) of the second supply port (632) may be about 2.5 to 15 mm. In addition, the length (H2) of the second supply port (632) may be shorter than the length (H1) of the first supply port (631). To explain this more specifically, the length (H2) of the second supply port (632) may be about 50 to 85% of the length (H1) of the first supply port (631) in consideration of the flow characteristics of the process gas. For example, the length (H1) of the first supply port (631) may be about 120 to 150 mm, and the diameter (D2) of the second supply port (632) may be 8 mm. The length (H2) of the second supply port (632) may be determined in the range of 80 to 100 mm. Meanwhile, although not shown, the diameters of the first supply port (631) and the second supply port (632) may both be 8 mm.

[0080] As the supply port (630) is provided with an appropriate range of diameter and length, the flow rate of the process gas supplied to the plasma generating unit (600) through the supply port (630) can be maintained constant.

[0081] Figure 5 is a drawing showing an enlarged view of the plasma generation unit and the process material supply unit.

[0082] Referring to FIG. 5, the plasma generating unit (600) may include a first diffusion space (610) and a through hole (620), and the process material supply unit (700) may include a second diffusion space (710) and a supply hole (720).

[0083] The through hole (620) and the supply hole (720) may have a preset diameter. The diameter (D4) of the supply hole (720) may be smaller than the diameter (D3) of the through hole (620). For example, the diameter (D4) of the supply hole (720) may be about 50% or less of the diameter (D3) of the through hole (620). Specifically, the diameter (D4) of the supply hole (720) may be about 30% or less of the diameter (D3) of the through hole (620). More specifically, the diameter (D4) of the supply hole (720) may be about 2 to 30% of the diameter (D3) of the through hole (620). When the diameter (D3) of the through hole (620) and the diameter (D4) of the supply hole (720) satisfy the above-described range, an electric field may be smoothly formed, and thus, plasma conversion efficiency may be improved. The diameter (D3) of the through hole (620) may be formed to be larger than a preset critical diameter. For example, the diameter (D3) of the through hole (620) may be determined to be 20 mm or more.

[0084] The through hole (620) and the supply hole (720) may have preset lengths. The length (H3) of the through hole (620) and the length (H4) of the supply hole (720) may be the same or different. To explain in detail, the length (H4) of the supply hole (720) may be about 0.5 to 2.5 times the length (H3) of the through hole (620). If the length (H3) of the through hole (620) is less than the aforementioned range and is relatively short relative to the length (H4) of the supply hole (720), the process gas may not be sufficiently exposed to the electric field, which may reduce the plasma conversion efficiency. In addition, if the length (H4) of the supply hole (720) is short so that the aforementioned ratio (H3 / H4) exceeds the aforementioned range, the thickness of the process material supply section (700) in which the supply hole (720) is formed may be relatively thin, causing a sagging phenomenon in the process material supply section (700). For example, the length (H3) of the through hole (620) may be about 10 to 50 mm, and the length (H4) of the supply hole (720) may be about 10 to 20 mm.

[0085] The number of through holes (620) provided in the plasma generating unit (600) may be formed to be smaller than the number of supply holes (720) provided in the process material supply unit (700). For example, the number of supply holes (720) may be determined in the range of 1.5 to 5 times the number of through holes (620).

[0086] Figure 6 is a plan view of the process material supply unit.

[0087] Referring to FIG. 6, the process material supply unit (700) may include a plurality of supply holes (720).

[0088] A plurality of supply holes (720) may be arranged in a radial pattern in the process material supply unit (700). To be more specific, a plurality of supply holes (720) may be arranged on a virtual first circumference. The plurality of supply holes (720) arranged on the first circumference may be arranged to be spaced apart from each other by a first interval. In addition, a plurality of supply holes (720) may be arranged on a virtual second circumference arranged around the first circumference. The plurality of supply holes (720) arranged on the second circumference may be spaced apart from each other by a second interval. In addition, a plurality of supply holes (720) may be arranged on a virtual third circumference arranged around the second circumference. The plurality of supply holes (720) arranged on the third circumference may be spaced apart from each other by a third interval. In this case, the first to third intervals may be the same. Additionally, the spacing between the first and second circumferences may be the same as the spacing between the second and third circumferences. That is, the supply holes (720) may be provided in the same number per unit area or in the same plane on the lower surface of the process material supply unit (700).

[0089] As multiple supply holes (720) are formed in a radial pattern, purging of process gas and process material can be performed quickly.

[0090] As described above, the gas port (150) providing a discharge path for process byproducts may be arranged on the inner bottom surface of the chamber body (110). In this case, among the process gases supplied to the substrate (W), the process gases supplied to the edge of the substrate (W) may escape from the substrate (W) before reacting with the surface of the substrate (W). If the opportunity for contact with the process gas is lower at the edge than at the center of the substrate (W), a quality difference may occur between the center and the edge of the substrate (W).

[0091] As the arrangement density of the supply holes (720) increases closer to the center of the process material supply unit (700), the amount of process gas supplied to the center of the substrate (W) may increase. In this case, the process gas may react preferentially at the center of the substrate (W), and then the process gas that has not reacted with the substrate (W) may diffuse to the edge of the substrate (W) and react with the substrate (W). As the reaction of the process gas diffuses from the center of the substrate (W) toward the edge, through this process, contact opportunities of the process gas can be uniformly formed over the entire area of ​​the substrate (W).

[0092] Figure 7 is a drawing for explaining the process cycle.

[0093] Referring to FIG. 7, multiple processes can be sequentially performed to deposit a thin film on a substrate (W).

[0094] A process cycle may include a source gas injection step, a source purge gas injection step, a reaction gas injection step, a reaction purge gas injection step, a suppression gas injection step, and a suppression purge gas injection step.

[0095] At each injection step, a source gas, a source purge gas, a reaction gas, a reaction purge gas, a suppression gas, and a suppression purge gas may be supplied to the substrate (W) through a process material supply unit (700) or may be supplied to the substrate (W) after some of the process gases have been converted into a plasma state. When a process is performed on the substrate (W), process byproducts (BP) generated in the process chamber (100) may be transported to the exhaust line (700) through a chamber line (810).

[0096] In the source gas injection step, a source gas may be injected into the process chamber (100). The source gas may be supplied to the surface of the substrate (W) through the process material supply unit (700). Some of the source gas supplied to the substrate (W) may be adsorbed on the surface of the substrate (W), and some may not be adsorbed. The non-adsorbed source gas may be deposited on the adsorbed source gas or may float inside the process chamber (100).

[0097] After the source gas injection step, a source purge gas may be injected into the process chamber (100) in a source purge gas injection step. The source purge gas may be supplied to the process chamber (100) through a process material supply unit (700). The source purge gas injection step may include a step in which the source gas not adsorbed on the surface of the substrate (W) is discharged from the process chamber (100). That is, when the source gas is purged from the process chamber (100), only the source gas adsorbed on the substrate (W) remains, and the source gas deposited on the adsorbed source gas or floating in the process chamber (100) may be discharged to the outside of the process chamber (100). Accordingly, a single source gas layer may be formed on the surface of the substrate (W).

[0098] After the source gas is purged, a reaction gas or a first process material may be injected into the process chamber (100) in a reaction gas injection step. Here, the first process material may be generated by a plasma generator. The reaction gas or the first process material may be supplied to the surface of the substrate (W) through the process material supply unit (700). The reaction gas or the first process material may react with the source gas adsorbed on the substrate (W) to form a thin film.

[0099] After a thin film is formed on the substrate (W), a reaction purge gas may be injected into the process chamber (100) in a reaction purge gas injection step. As the reaction purge gas is injected, the reaction gas or the first process material may be purged from the process chamber (100). The reaction purge gas for purging the reaction gas or the first process material may be supplied to the process chamber (100) through the process material supply unit (700). As the reaction purge gas is injected into the process chamber (100), process byproducts that are not used to form the thin film on the surface of the substrate (W) may be discharged from the process chamber (100).

[0100] After the reaction gas or the first process material is purged, a suppressing gas may be injected into the process chamber (100) in the suppressing gas injection step. The suppressing gas may be supplied to the surface of the substrate (W) through the process material supply unit (700). A material for suppressing deposition may be formed on a thin film already formed on the substrate (W) by the suppressing gas.

[0101] After a material for suppressing deposition is formed, a suppressing purge gas may be injected into the process chamber (100) in a suppressing purge gas injection step. As the suppressing purge gas is injected, the suppressing gas may be purged from the process chamber (100). The suppressing purge gas for purging the suppressing gas may be supplied to the process chamber (100) through a process material supply unit (700). As the suppressing purge gas is injected into the process chamber (100), process byproducts including the suppressing gas may be discharged from the process chamber (100).

[0102] Multiple processes as described above are performed sequentially to form one process cycle, and multiple layers of thin films can be deposited on a substrate (W) through multiple process cycles.

[0103] In the present invention, the substrate (W) may include a gap. When only a thin film deposition process using a source gas and a reactant gas is performed, the entrance to the gap may be blocked by the thin film, forming a void or seam within the gap. A deposition suppression process can suppress thin film deposition around the gap. This allows process gases and process materials to easily penetrate the gap during each process cycle, and allows the interior of the gap to be filled with deposition materials.

[0104] Figure 8 is a drawing showing a process gas or a first process material being supplied to a process chamber.

[0105] Referring to FIG. 8, a process gas (PG) or a first process material (PM1) can be supplied to the process chamber (100).

[0106] One process gas (PG) among a source gas, a source purge gas, a reaction gas, a reaction purge gas, a suppression gas, and a suppression purge gas can be supplied from a gas supply unit (400) to a plasma generation unit (600). The plasma generation unit (600) transfers the corresponding process gas (PG) to a process material supply unit (700), and the process material supply unit (700) can supply the transferred process gas (PG) into the interior of the process chamber (100). That is, the process material supply unit (700) can supply the source gas, the source purge gas, the reaction gas, the reaction purge gas, the suppression gas, or the suppression purge gas to the process chamber (100).

[0107] When the first power supply unit (810) supplies RF power to the plasma generation unit (600), the plasma generation unit (600) can convert the reaction gas into a first process material (PM1) and then supply it to the process material supply unit (700). In this case, the process material supply unit (700) can supply the first process material (PM1) to the process chamber (100). The first process material (PM1) can be used for deposition of a thin film.

[0108] Figure 9 is a drawing showing a second process material or a third process material being supplied to a process chamber.

[0109] Referring to FIG. 9, a second process material (PM2) or a third process material (PM3) can be supplied to the process chamber (100).

[0110] One of the process gases (PG) of the reaction gas and the suppression gas can be supplied from the gas supply unit (400) to the plasma generation unit (600). Accordingly, the plasma generation unit (600) can transfer the corresponding process gas (PG) to the process material supply unit (700), and the process material supply unit (700) can supply the transferred process gas (PG) into the interior of the process chamber (100). That is, the process material supply unit (700) can supply the reaction gas or the suppression gas to the process chamber (100).

[0111] After the reaction gas or suppressing gas is supplied to the process chamber (100), the second power supply unit (820) can supply RF power to the process material supply unit (700). When the second power supply unit (820) supplies RF power to the process material supply unit (700), the reaction gas can be converted into a second process material (PM2), and the suppressing gas can be converted into a third process material (PM3). The second process material (PM2) can be used for deposition of a thin film, and the third process material (PM3) can be used for suppressing deposition of a thin film.

[0112] Fig. 10 is a drawing showing a plasma generation unit and a process material supply unit according to another embodiment of the present invention.

[0113] Referring to FIG. 10, the plasma generating unit (601) is positioned facing the through hole (620) and may include a diffusion guide surface that guides the diffusion of the process gas (PG).

[0114] The diffusion guide surface (640, 650) may include a center guide surface (640) and an edge guide surface (650). The center guide surface (640) is formed at the center of the diffusion guide surface (640, 650). The edge guide surface (650) is formed at the edge of the center guide surface (640). For example, the edge guide surface (650) may be formed in the shape of a ring along the edge of the center guide surface (640).

[0115] The distance (h4) between the center guide surface (640) and the through hole (620) may be formed longer than the distance (h3) between the edge guide surface (650) and the through hole (620). Specifically, the center guide surface (640) may be formed such that the distance (h4) from the through hole (620) increases as it progresses from the edge to the center. As a result, the diffusion efficiency of the process gas (PG) supplied from the supply port (630) to the first diffusion space (610) increases, and the density of the process gas (PG) passing through each through hole (620) may be formed uniformly.

[0116] The shape of the plasma generating unit (601) may be determined by the ratio between the detailed components. The ratio of the diameter (d4) of the center guide surface (640) to the diameter (d3) of the edge guide surface (650) (hereinafter referred to as the guide surface diameter ratio) may be 20 to 80%, and preferably may be determined within the range of 25 to 75%. If the guide surface diameter ratio is excessively small or large, the diffusion efficiency of the process gas (PG) supplied to the first diffusion space (610) may be reduced, and the discharge density in each through hole (620) may be formed unevenly.

[0117] The distance (h4) between the center guide surface (640) and the through hole (620) may be about 1.5 to 5 times the distance (h3) between the edge guide surface (650) and the through hole (620). To explain this in detail, the distance (h4) between the center guide surface (640) and the through hole (620) may be about 1.5 to 4 times the distance (h3) between the edge guide surface (650) and the through hole (620). When this ratio is less than about 1.5 times, the process gas (PG) may be concentrated at the edge of the first diffusion space (610), and when this ratio exceeds about 5 times, the process gas (PG) may be concentrated at the center of the first diffusion space (610).

[0118] The ratio of the distance (h4) between the center guide surface (640) and the through hole (620) to the height of the plasma generation unit (601) (hereinafter referred to as the height ratio) may be 20 to 95%, and preferably may be determined within the range of 30 to 80%. If the height ratio is excessively small or large, the pressure of the process gas (PG) injected into the first diffusion space (610) may be formed unevenly. For example, if the distance (h4) between the center guide surface (640) and the through hole (620) is within the range of 8 to 14 mm, the thickness of the plasma generation unit (601) may be determined within the range of 15 to 35 mm.

[0119] The process material supply unit (701) may include a central supply unit (730) and an edge supply unit (740). The central supply unit (730) is formed at the center of the process material supply unit (701). The edge supply unit (740) is formed at the edge of the central supply unit (730). For example, the edge supply unit (740) may be formed in the shape of a ring along the edge of the central supply unit (730).

[0120] The length (h6) of the supply hole (720) formed in the central supply portion (730) may be formed longer than the length (h7) of the supply hole (720) formed in the edge supply portion (740). Specifically, the length (h6) of the supply hole (720) formed in the central supply portion (730) may be formed to become longer as it progresses from the edge to the center of the process material supply portion (701). As a result, the supply amount of the process material supply portion (701) may be formed to be larger at the center than at the edge.

[0121] In order to improve the quality of the thin film (TF) formed at the edge of the substrate (W), it is desirable to supply a larger amount of process gas (PG) toward the center of the substrate (W) than toward the edge. As the length (h6) of the supply hole (720) increases from the edge to the center of the process material supply unit (701), the amount of process gas (PG) supplied can increase from the edge to the center of the process material supply unit (701).

[0122] The shape of the process material supply unit (701) may be determined by the ratio between the detailed components. The ratio of the diameter (d6) of the central supply unit (730) to the diameter (d5) of the edge supply unit (740) (hereinafter referred to as the process material supply unit diameter ratio) may be 50 to 80%, and preferably may be determined within the range of 55 to 75%. If the process material supply unit diameter ratio is too small, the diffusion efficiency of the process gas (PG) may be reduced, and if the process material supply unit diameter ratio is too large, the supply amount at the center of the process material supply unit (701) may be reduced. For example, if the diameter (d5) of the edge process material supply unit (740) is within the range of 250 to 350 mm, the diameter (d6) of the central process material supply unit (730) may be determined within the range of 125 to 280 mm.

[0123] The ratio of the length (h7) of the supply hole (720) formed in the edge supply part (740) to the length (h6) of the supply hole (720) formed in the central supply part (730) (hereinafter referred to as the supply hole length ratio) may be 15 to 90%, and preferably may be determined within the range of 20 to 85%. If the supply hole length ratio is too small, the supply amount at the center of the process material supply part (701) may be reduced, and if the supply hole length ratio is too large, the diffusion efficiency of the process gas (PG) may be reduced. For example, if the length (h6) of the supply hole (720) formed in the central process material supply part (730) is within the range of 10 to 200 mm, the length (h7) of the supply hole (720) formed in the edge process material supply part (740) may be determined within the range of 1.5 to 18 mm. Additionally, the distance (h8) between the central process material supply unit (730) and the through hole (620) can be determined within a range of 4 to 10 mm.

[0124] Figure 11 is a drawing showing a gap formed in a substrate.

[0125] Referring to FIG. 11, a gap (G) may be formed in the substrate (W). For example, the gap (G) may be a spacing between wires.

[0126] A thin film may be formed on the substrate (W) as an interlayer insulating film. In this case, it is desirable for the deposition material for forming the thin film to penetrate and fill the gap (G). On the other hand, if the gap between the wires is small, it may not be easy for the process material to penetrate the gap (G), and thus the proper formation of the thin film may not be performed. In particular, if the inlet diameter (D5) of the gap (G) is small and the depth (H5) of the gap (G) is deep, it may not be easy for the deposition material to penetrate into the gap (G). This is because the thin film formed at the inlet of the gap (G) blocks the inlet, thereby preventing the deposition material from penetrating into the interior of the gap (G).

[0127] The substrate processing device (10) according to an embodiment of the present invention can suppress the deposition of a thin film on the surface of the substrate (W) by adding a deposition suppression process after the deposition process. Accordingly, the deposition of the thin film is suppressed at the entrance of the gap (G), allowing the deposition material to penetrate into the gap (G), and allowing the gap (G) to be filled with the deposition material.

[0128] Fig. 12 is a drawing showing a thin film being deposited on a substrate, Fig. 13 is a drawing showing a third process material being formed on a substrate, Fig. 14 is a drawing showing a thin film being deposited on a substrate on which a third process material is formed, and Fig. 15 is a drawing for explaining a process of depositing a thin film on a substrate.

[0129] Referring to Fig. 12, a first process material (PM1) can be supplied to a substrate (W) for deposition of a thin film (TF). The first process material (PM1) can react with a source gas distributed on the surface of the substrate (W) to form a thin film (TF).

[0130] Figure 12 (a) shows that a first process material (PM1) is supplied to a substrate (W), and (b) shows that a thin film (TF) is deposited on the substrate (W). Hereinafter, the process in which a first process material (PM1) is used to deposit a thin film (TF) on the substrate (W) is referred to as a first deposition process.

[0131] The first process material (PM1) may have a relatively high horizontal movement component. Since the first process material (PM1) is supplied in a state where no electric field is formed inside the process chamber (100), it may have a relatively low vertical movement component. For example, the first process material (PM1) generated in the first deposition process may have a higher horizontal movement component than the third process material (PM3) generated in the reaction process described below. Since it has a relatively high horizontal movement component, a high contact opportunity is formed between the first process material (PM1) that has penetrated into the gap (G) and the sidewall of the gap (G), and the deposition efficiency of the thin film (TF) on the sidewall of the gap (G) may be improved.

[0132] Referring to Fig. 13, a third process material (PM3) may be supplied to the substrate (W) to suppress deposition of a thin film (TF). The third process material (PM3) may be bonded to a pre-formed thin film (TF).

[0133] Figure 13 (a) shows that a third process material (PM3) is supplied to a substrate (W), and (b) shows that the third process material (PM3) is bonded to the substrate (W). Hereinafter, the process in which the third process material (PM3) is supplied and bonded to the substrate (W) is referred to as a reaction process. In the present invention, the reaction process can be understood as a process for suppressing the deposition of a thin film (TF) on the surface of the substrate (W).

[0134] The third process material (PM3) may have a relatively high vertical movement component. The third process material (PM3) may have a relatively high vertical movement component because it is generated by converting a suppressing gas while an electric field is formed inside the process chamber (100). For example, the third process material (PM3) generated in the reaction process may have a higher vertical movement component than the first process material (PM1) generated in the first deposition process. Because it has a relatively high vertical movement component, the contact opportunity between the third process material (PM3) and the surface of the substrate (W) is high, whereas the contact opportunity between the third process material (PM3) that has penetrated into the gap (G) and the sidewall of the gap (G) may be formed low. Accordingly, the density of the third process material (PM3) formed on the sidewall of the gap (G) may be formed lower than the density of the third process material (PM3) formed on the surface of the substrate (W) and around the entrance of the gap (G).

[0135] Referring to FIG. 14, in a subsequent process cycle, a first process material (PM1) may be supplied to a substrate (W) to which a third process material (PM3) is combined.

[0136] As the first process material (PM1) is supplied, another thin film (TF) can be deposited on the substrate (W). Fig. 14 (a) shows that the first process material (PM1) is supplied to the substrate (W), and (b) shows that the thin film (TF) is deposited on the substrate (W).

[0137] The third process material (PM3) can be bonded to the previously deposited thin film (TF) to suppress the first process material from being bonded to the thin film (TF). Accordingly, the deposition of an additional thin film can be suppressed by the third process material (PM3). Since a relatively high density of the third process material (PM3) is formed around the surface of the substrate (W) and the entrance of the gap (G), the thickness of the thin film (TF) deposited on the surface of the substrate (W) and the entrance of the gap (G) can be formed relatively thin. In contrast, since a relatively low density of the third process material (PM3) is formed on the sidewall of the gap (G), the thickness of the thin film (TF) deposited on the sidewall of the gap (G) can be formed relatively thick.

[0138] Referring to Fig. 15, as the deposition process and reaction process are repeated, a thin film (TF) can be deposited on the substrate (W), and the gap (G) can be filled with the deposition material.

[0139] In particular, as the process cycle is repeated, the deposition of the thin film (TF) on the surface of the substrate (W) and around the entrance of the gap (G) is suppressed, and the deposition of the thin film (TF) inside the gap (G) can be performed normally. Accordingly, the formation of a void or seam inside the gap (G) is prevented, and normal deposition of the thin film (TF) can be performed.

[0140] Fig. 16 is a flowchart showing a substrate processing method according to an embodiment of the present invention, and Fig. 17 is a drawing for explaining process conditions.

[0141] Referring to FIG. 16, a substrate processing method according to an embodiment of the present invention may include a step (S1010) in which a first deposition process is performed to deposit a thin film (TF) on a substrate (W) in which a gap (G) is formed, a step (S1020) in which a reaction process is performed on the substrate (W), a step (S1030) in which it is determined whether a gap-fill condition for the gap (G) formed on the substrate (W) is satisfied, a step (S1040) in which the first deposition process is performed, and a step (S1050) in which it is determined whether a thin film thickness condition for the thin film (TF) deposited on the substrate (W) is satisfied.

[0142] The first deposition process refers to a process in which a first process material (PM1) generated by converting a reaction gas into a plasma state is supplied to a substrate (W) to deposit a thin film (TF). The first deposition process may include a process in which a reaction gas is converted into a first process material (PM1) in a plasma state by a plasma generator (600), and a process in which the first process material (PM1) generated in the plasma generator (600) is supplied to the substrate (W) by a process material supply unit (700) disposed below the plasma generator (600).

[0143] The first process material (PM1) for the first deposition process is generated by a plasma generator (600), and the first deposition process can be performed using a hollow cathode plasma (HCP) method.

[0144] The reaction process refers to a process in which a suppressing gas is supplied to a substrate (W) and then converted into a third process material (PM3) in a plasma state and formed on the surface of the substrate (W). The reaction process may include a process in which a suppressing gas supplied from a plasma generating unit (600) to a process material supply unit (700) is supplied to the substrate (W), a process in which the suppressing gas supplied to the substrate (W) is converted into a third process material (PM3) in a plasma state, and a process in which the third process material is combined with an existing thin film to reduce the reactivity of the thin film.

[0145] The third process material (PM3) for the reaction process is generated by converting the suppressing gas into a plasma state in the process chamber (100), and the reaction process can be performed using a capacitively coupled plasma (CCP) method.

[0146] After the reaction process is performed, it can be determined whether the gap-fill condition is satisfied. The gap-fill condition represents a condition that prevents the formation of a void or seam within the gap (G). For example, if the gap-fill condition is satisfied, it can be determined that no void or seam is formed within the gap (G).

[0147] Referring to FIGS. 16 and 17, whether the gap-fill condition is satisfied can be determined by referring to the ratio of the thickness (T1) of the thin film (TF) formed on the surface of the substrate (W) and the thickness (T2) of the thin film (TF) formed in the gap (G). Specifically, if the ratio of the thickness (T2) of the thin film (TF) formed on the side wall of the gap (G) to the thickness (T1) of the thin film (TF) formed on the surface of the substrate (W) (hereinafter referred to as the first thickness ratio) is greater than a preset ratio, it can be determined that the gap-fill condition is satisfied. For example, if the first thickness ratio exceeds 125%, it can be determined that the gap-fill condition is satisfied. That is, if the thickness (T2) of the thin film (TF) formed on the side wall of the gap (G) exceeds 1.25 in a state where the thickness (T1) of the thin film (TF) formed on the surface of the substrate (W) is 1, it can be determined that the gap-fill condition is satisfied. Meanwhile, if the thickness (T1) of the thin film (TF) formed on the surface of the substrate (W) is 1 and the thickness (T2) of the thin film (TF) formed on the side wall of the gap (G) is 1.25 or less, it can be determined that the gap fill condition is not satisfied.

[0148] Alternatively, according to some embodiments of the present invention, whether the gap-fill condition is satisfied may be determined with reference to the ratio of the depth (H5) of the gap (G) and the thickness (T3) of the thin film (TF) formed on the gap (G). Specifically, if the ratio of the thickness (T3) of the thin film (TF) formed on the bottom surface of the gap (G) to the depth (H5) of the gap (G) (hereinafter referred to as the second thickness ratio) is greater than a preset ratio, it may be determined that the gap-fill condition is satisfied. The second thickness ratio for determining whether the gap-fill condition is satisfied may be 70 to 80%. For example, if the second thickness ratio exceeds 80%, it may be determined that the gap-fill condition is satisfied. That is, if the thickness (T3) of the thin film (TF) formed on the bottom surface of the gap (G) exceeds 0.8 when the depth (H5) of the gap (G) is 1, it may be determined that the gap-fill condition is satisfied. Meanwhile, if the thickness (T3) of the thin film (TF) formed on the bottom surface of the gap (G) is 0.8 or less when the depth (H5) of the gap (G) is 1, it can be determined that the gap fill condition is not satisfied.

[0149] The above has described that whether the gap fill condition is satisfied is determined based on the first thickness ratio or the second thickness ratio. However, according to some embodiments of the present invention, whether the gap fill condition is satisfied may also be determined based on at least one of the first thickness ratio and the second thickness ratio.

[0150] Referring again to FIG. 16, a step (S1040) in which an additional first deposition process is performed may be included between the step (S1030) in which it is determined whether the gap-fill condition is satisfied and the step (S1050) in which it is determined whether the thin film thickness condition is satisfied. The step (S1040) in which the additional first deposition process is performed may be performed if the gap-fill condition is satisfied in the step (S1030) in which it is determined whether the gap-fill condition is satisfied. Specifically, if the gap-fill condition is satisfied, the additional first deposition process may be repeated, and if the gap-fill condition is not satisfied, the first deposition process and the reaction process may be repeated. If the gap-fill condition is satisfied, the additional first deposition process may be repeated depending on whether the thin film thickness condition is satisfied.

[0151] Whether the thin film thickness condition is satisfied can be determined by comparing the thickness of the thin film (TF) formed on the surface of the substrate (W) with a threshold thickness set in advance. If the thickness of the thin film (TF) formed on the surface of the substrate (W) is thicker than the threshold thickness, the thin film thickness condition can be determined to be satisfied. If the thickness of the thin film (TF) formed on the surface of the substrate (W) is thinner than the threshold thickness, the thin film thickness condition can be determined not to be satisfied. If the thin film thickness condition is satisfied, the process for depositing the thin film on the substrate can be stopped. If the thin film thickness condition is not satisfied, an additional first deposition process can be performed.

[0152] Figure 18 is a flowchart showing a substrate processing method according to another embodiment of the present invention.

[0153] Referring to FIG. 18, a substrate processing method according to another embodiment of the present invention may include a step (S1110) in which a first deposition process is performed to deposit a thin film (TF) on a substrate (W) in which a gap (G) is formed, a step (S1120) in which a reaction process is performed, a step (S1130) in which it is determined whether a gap-fill condition is satisfied, a step (S1140) in which a second deposition process is performed, and a step (S1150) in which it is determined whether a thin film thickness condition is satisfied.

[0154] The first deposition process refers to a process in which a reaction gas is converted into a plasma state, the generated first process material is supplied to the substrate (W), and a thin film (TF) is deposited. The reaction process refers to a process in which a suppressing gas is supplied to the substrate (W), and then converted into a third process material in a plasma state, and formed on the surface of the substrate (W). Since the first deposition process and the reaction process have been described above, a detailed description thereof will be omitted.

[0155] After the reaction process is performed, it can be determined whether the gap-fill condition is satisfied.

[0156] Whether the gap-fill condition is satisfied can be determined by referring to the ratio of the thickness of the thin film (TF) formed on the surface of the substrate (W) and the thickness of the thin film (TF) formed on the side wall of the gap (G). Alternatively, whether the gap-fill condition is satisfied can be determined by referring to the ratio of the depth of the gap (G) and the thickness of the thin film (TF) formed on the bottom surface of the gap (G). Since the determination of whether the gap-fill condition is satisfied has been described above, a detailed description thereof will be omitted.

[0157] If the gap-fill condition is satisfied, the second deposition process may be repeated, and if the gap-fill condition is not satisfied, the first deposition process and reaction process may be repeated. If the gap-fill condition is satisfied, the second deposition process may be repeated depending on whether the thin film thickness condition is satisfied.

[0158] A step (S1140) of performing a second deposition process may be included between the step (S1130) of determining whether the gap fill condition is satisfied and the step (S1150) of determining whether the thin film thickness condition is satisfied. The second deposition process may be performed when the gap fill condition is satisfied. The second deposition process refers to a process in which a reaction gas is supplied to a substrate (W) and then converted into a second process material (PM2) in a plasma state to deposit a thin film (TF). The second deposition process may include a process in which a reaction gas supplied from a plasma generator (600) to a process material supply unit (700) is supplied to the substrate (W) and then converted into a second process material (PM2) in a plasma state.

[0159] The second process material (PM2) for the second deposition process is generated by converting the reaction gas into a plasma state in the process chamber (100), and the second deposition process can be performed using a capacitively coupled plasma (CCP) method.

[0160] The second deposition process may be a process of depositing a thin film (TF) on the substrate (W) at a faster speed than the first deposition process. The second deposition process is performed by forming an electric field inside the process chamber (100), and the first deposition process may be performed in a state where no electric field is formed inside the process chamber (100). Accordingly, the second process material (PM2) may have a higher vertical movement component than the first process material (PM1), and the second process material (PM2) may contact the substrate (W) at a higher speed than the first process material (PM1).

[0161] The second process material (PM2) generated using the capacitively coupled plasma method may have a lower horizontal movement component than the first process material (PM1). If the gap fill condition is not satisfied, the second process material (PM2) cannot form a thin film with a sufficient thickness on the sidewall of the gap (G), but if the gap fill condition is satisfied, the second process material (PM2) can form a thin film with a sufficient thickness on the sidewall of the gap (G). Accordingly, the gap (G) can be filled at a high speed by the deposition material through the second deposition process.

[0162] When the second deposition process is completed, it can be determined whether the thin film thickness condition is satisfied. Whether the thin film thickness condition is satisfied can be determined by comparing the thickness of the thin film (TF) formed on the surface of the substrate (W) with a threshold thickness set in advance. If the thickness of the thin film (TF) formed on the surface of the substrate (W) is thicker than the threshold thickness, it can be determined that the thin film thickness condition is satisfied. On the other hand, if the thickness of the thin film (TF) formed on the surface of the substrate (W) is thinner than the threshold thickness, it can be determined that the thin film thickness condition is not satisfied. If the thin film thickness condition is satisfied, the process for depositing the thin film on the substrate can be stopped.

[0163] Figure 19 is a flow chart showing the first deposition process and reaction process.

[0164] Referring to FIG. 19, the first deposition process may include a step of supplying a source gas (S1210), a step of purging the source gas (S1220), a step of supplying a reaction gas (S1230), and a step of purging the reaction gas (S1240).

[0165] The source gas and the source purge gas can be supplied to the process chamber (100) without separate processing. The reaction gas can be supplied to the plasma generator (600). The plasma generator (600) can convert the reaction gas into a first process material in a plasma state and supply it to the process material supply unit (700). The first process material (PM1) can be supplied to the substrate (W) by the process material supply unit (700) to perform deposition of a thin film (TF).

[0166] The reaction process may include a step (S1250) in which a suppressing gas is supplied and a step (S1260) in which the suppressing gas is purged.

[0167] A suppressing gas may be supplied to the process chamber (100). At this time, as the second power supply unit (820) supplies RF power to the process material supply unit (700), an electric field is formed inside the process chamber (100), and the suppressing gas may be converted into a third process material (PM3) in a plasma state. The third process material (PM3) may be combined with a previously formed thin film to reduce the reactivity of the thin film.

[0168] Figure 20 is a flowchart showing the second deposition process.

[0169] Referring to FIG. 20, the second deposition process may include a step of supplying a source gas (S1310), a step of purging the source gas (S1320), a step of supplying a reaction gas (S1330), and a step of purging the reaction gas (S1340).

[0170] The source gas, the source purge gas, the reaction gas, and the reaction purge gas can be supplied to the process chamber (100) without separate processing. After the reaction gas is supplied to the process chamber (100), the second power supply unit (820) can supply RF power to the process material supply unit (700). As the second power supply unit (820) supplies RF power to the process material supply unit (700), an electric field is formed inside the process chamber (100) and the reaction gas can be converted into a second process material (PM2) in a plasma state. The second process material (PM2) can react with the source gas supplied in advance to form a thin film (TF).

[0171] Although the embodiments of the present invention have been described above with reference to the accompanying drawings, those skilled in the art will appreciate that the present invention can be implemented in other specific forms without altering the technical concept or essential features thereof. Therefore, the embodiments described above should be understood to be illustrative in all respects and not restrictive.

Claims

1. A step in which a first deposition process is performed to deposit a thin film on a substrate in which a gap is formed; A step in which a reaction process is performed on the above substrate; A step of determining whether a gap fill condition for a gap formed on the substrate is satisfied; and Including a step of determining whether the thin film thickness condition for the thin film deposited on the above substrate is satisfied, The above first deposition process is, Step where source gas is supplied; The step where the source gas is purged; A step in which a reaction gas is supplied; and comprising a step of purging the above reaction gas, A substrate processing method wherein the above reaction process includes a process for suppressing deposition of a thin film on the surface of the substrate.

2. In paragraph 1, A step of performing an additional first deposition process is included between the step of determining whether the above gap fill condition is satisfied and the step of determining whether the above thin film thickness condition is satisfied. A substrate processing method in which the step of performing the additional first deposition process is performed when the gap fill condition is satisfied in the step of determining whether the gap fill condition is satisfied.

3. In paragraph 2, The step of determining whether the above thin film thickness condition is satisfied includes a step of comparing the thickness of the thin film formed on the surface of the substrate with a threshold thickness set in advance. A substrate processing method in which the additional first deposition process is performed when the above thin film thickness condition is not satisfied.

4. In paragraph 2 or paragraph 3, In the step of determining whether the above gap fill condition is satisfied, whether the gap fill condition is satisfied is determined using the ratio of the thickness of the thin film formed on the side wall of the gap to the thickness of the thin film formed on the surface of the substrate. A substrate processing method in which the gap fill condition is determined to be satisfied when the above ratio exceeds 125%.

5. In paragraph 2 or 3, In the step of determining whether the above gap fill condition is satisfied, whether the gap fill condition is satisfied is determined using the ratio of the thickness of the thin film formed on the bottom surface of the gap to the depth of the gap. A substrate processing method in which the gap fill condition is determined to be satisfied when the above ratio exceeds 80%.

6. In paragraph 1, A substrate processing method in which the first deposition process and the reaction process are repeatedly performed when the gap fill condition is not satisfied at the step of determining whether the gap fill condition is satisfied.

7. In paragraph 1, The above first deposition process is performed using a hollow cathode plasma (HCP) method, The above reaction process is a substrate treatment method performed using a capacitively coupled plasma (CCP) method.

8. In paragraph 1, A step of performing a second deposition process is included between the step of determining whether the above gap fill condition is satisfied and the step of determining whether the above thin film thickness condition is satisfied. A substrate processing method in which the second deposition process is performed when the gap fill condition is satisfied in the step of determining whether the gap fill condition is satisfied.

9. In paragraph 8, The above second deposition process is, Step where source gas is supplied; The step where the source gas is purged; A step in which a reaction gas is supplied; and comprising a step of purging the above reaction gas, A substrate processing method, wherein the second deposition process includes a process of depositing a thin film on the substrate at a faster rate than the first deposition process.

10. In paragraph 9, The above first deposition process is performed using a hollow cathode plasma (HCP) method, A substrate processing method in which the above reaction process and the second deposition process are performed using a capacitively coupled plasma (CCP) method.

Images