Light detection device, method for manufacturing same, wafer, and electronic device

The photodetection device employs a cubic semiconductor layer and trench partition structure with boron impurities and an antireflection layer to address dark current issues in solid-state imaging, enhancing image quality by reducing noise and interface states.

WO2025017879A1PCT designated stage expired Publication Date: 2025-01-23SONY SEMICON SOLUTIONS CORP
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Patent Information

Application Number
PCT/JP2023/026446
Authority / Receiving Office
WO · WO
Patent Type
Applications
Current Assignee / Owner
Filing Date
2023-07-19
Publication Date
2025-01-23

AI Technical Summary

Technical Problem

Conventional photodetection devices face issues with dark current due to physical damage from dry etching, which can cause crystal defects and interface states in the substrate, affecting the performance of solid-state imaging devices.

Method used

A photodetection device with a cubic semiconductor layer and a trench partition structure is developed, where the semiconductor layer has a <100> orientation and the trench partition structure is formed with grooves aligned along the <100> direction, incorporating a semiconductor single crystal layer with boron impurities to suppress dark current, and an antireflection layer to induce holes and reduce interface states.

Benefits of technology

The solution effectively suppresses dark current by maintaining high boron concentration and preventing diffusion, leading to improved image quality and reduced noise in photodetection devices.

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Abstract

The purpose of the present invention is to provide a light detection device in which a dark current is suppressed. This light detection device is provided with: a cubic semiconductor layer which has a plurality of photoelectric conversion regions, in which a photoelectric conversion element is configured, in a matrix form along the X direction and the Y direction orthogonal to each other in a plan view, and in which one surface is an element formation surface and the other surface is a light incident surface; and a trench partition structure which partitions between the photoelectric conversion regions. The X direction and the Y direction are the <100> direction.
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Citation Information

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