Vapor phase growth apparatus

Abstract

The purpose of the present invention is to provide a vapor phase growth apparatus in which automatic delivery to an MOCVD reaction furnace and automatic delivery to a dry cleaning furnace are possible. The present invention provides a vapor phase growth device (1) which comprises: a reaction chamber (10) in which an MOCVD reaction furnace (16) for growing a crystal on a wafer (W) that is held by a reaction furnace member (25) is housed; a first conveyance chamber (45) in which a first conveyance unit for conveying the reaction furnace member and the wafer is housed, and which is disposed adjacent to the reaction chamber and is able to communicate with the reaction chamber; and a cleaning chamber (65) in which a dry cleaning furnace (66) for cleaning the reaction furnace member is housed, and which is disposed adjacent to the first conveyance chamber and is able to communicate with the first conveyance chamber.

Description

Vapor phase growth equipment

[0001] The present invention relates to a vapor phase growth apparatus.

[0002] Conventionally, crystals on wafers are grown (semiconductor thin films are formed) in a metal organic chemical vapor deposition (MOCVD) reactor. When the crystals are grown, reaction products (deposits) are generated in the MOCVD reactor. These reaction products adhere to reactor components, such as a susceptor cover, used in the MOCVD reactor. Therefore, these reactor components must be removed using a dry cleaning apparatus (dry cleaning furnace) such as that disclosed in Patent Document 1.

[0003] JP 2012-186311 A

[0004] However, conventionally, the wafers and reactor components are transferred to and from the MOCVD reactor and the dry cleaning device by hand, which increases the time required for crystal growth on the wafers.

[0005] The present invention has been made in view of the above problems, and has as its object to provide a vapor phase growth apparatus that can automatically transfer a substrate to an MOCVD reactor and a dry cleaning furnace.

[0006] In order to solve the above problems, the present invention proposes the following means: (1) Aspect 1 of the present invention is a vapor phase growth apparatus comprising: a reaction chamber accommodating an MOCVD reactor for growing crystals on wafers held in a reactor member; a first transfer chamber accommodating a first transfer unit for transferring the reactor member and the wafers, the first transfer chamber being disposed adjacent to the reaction chamber and capable of communicating with the reaction chamber; and a cleaning chamber accommodating a dry cleaning furnace for cleaning the reactor member, the first transfer chamber being disposed adjacent to the first transfer chamber and capable of communicating with the first transfer chamber.

[0007] In this invention, a crystal can be grown on a wafer held in a reactor component using an MOCVD reactor, and the reactor component can be cleaned using a dry cleaning furnace. The reaction chamber containing the MOCVD reactor and the cleaning chamber containing the dry cleaning furnace are disposed adjacent to each other and can communicate with the first transfer chamber, respectively, relative to a first transfer chamber containing a first transfer unit. Therefore, the distance between the reaction chamber and the first transfer chamber and the distance between the cleaning chamber and the first transfer chamber are shorter than when, for example, other chambers are disposed between the reaction chamber and the first transfer chamber or between the cleaning chamber and the first transfer chamber. Therefore, the first transfer unit can automatically transfer wafers and reactor components to the MOCVD reactor and to the dry cleaning furnace through the communication portions.

[0008] (2) Aspect 2 of the present invention may be the vapor phase growth apparatus described in (1), further comprising: a reactive atmosphere unit for filling the reaction chamber with an inert gas; a first transfer atmosphere unit for filling the first transfer chamber with the inert gas; and a control unit for controlling the reactive atmosphere unit and the first transfer atmosphere unit, wherein the control unit controls the pressure of the inert gas in the first transfer chamber by the first transfer atmosphere unit to be higher than the pressure of the inert gas in the reaction chamber by the reactive atmosphere unit. In this invention, the reactive atmosphere unit can fill the reaction chamber with the inert gas, and the first transfer atmosphere unit can fill the first transfer chamber with the inert gas. The control unit controls the pressure of the inert gas in the first transfer chamber by the first transfer atmosphere unit to be higher than the pressure of the inert gas in the reaction chamber by the reactive atmosphere unit. Therefore, the inert gas flows from the first transfer chamber toward the reaction chamber through a communication portion between the first transfer chamber and the reaction chamber. This prevents reaction products generated in the MOCVD reactor from flowing into the first transfer chamber through the communication portion.

[0009] (3) Aspect 3 of the present invention may be the vapor phase growth apparatus according to (1) or (2), further comprising a cleaning atmosphere unit that fills the cleaning chamber with an inert gas. In this invention, by filling the cleaning chamber with an inert gas using the cleaning atmosphere unit, it is possible to prevent wafers from being exposed to the atmosphere not only in the first transfer chamber and the reaction chamber but also in the cleaning chamber.

[0010] (4) A fourth aspect of the present invention may be the vapor phase growth apparatus described in any one of (1) to (3), further comprising: a second transfer chamber that accommodates a second transfer unit that transfers the wafer between the first transfer chamber and the second transfer chamber, the second transfer chamber being disposed adjacent to the first transfer chamber and capable of communicating with the first transfer chamber; and a second transfer atmosphere unit that fills the second transfer chamber with the inert gas, wherein the control unit controls the pressure of the inert gas in the second transfer chamber by the second transfer atmosphere unit to be higher than the pressure of the inert gas in the first transfer chamber by the first transfer atmosphere unit. In this invention, the second transfer unit can transfer the wafer between the first transfer chamber and the second transfer chamber through a portion where the second transfer chamber and the first transfer chamber communicate with each other. The second transfer atmosphere unit can fill the second transfer chamber with the inert gas. At this time, the control unit controls the pressure of the inert gas in the second transfer chamber by the second transfer atmosphere unit to be higher than the pressure of the inert gas in the first transfer chamber by the first transfer atmosphere unit. Therefore, it is possible to prevent reaction products generated in the MOCVD reactor from flowing into the second transfer chamber through the first transfer chamber.

[0011] (5) A fifth aspect of the present invention may be the vapor phase growth apparatus according to (2), wherein the dew point of the inert gas is −40° C. or lower and the inert gas does not contain oxygen gas. This invention not only prevents moisture in the inert gas from adhering to the wafer, but also prevents oxidation of the wafer or the like in the inert gas atmosphere.

[0012] (6) Aspect 6 of the present invention may be the vapor phase growth apparatus described in any one of (1) to (5), wherein the first transfer unit can change its orientation so as to face either the reaction chamber or the cleaning chamber while the support surface supporting the reactor member faces upward. This invention can prevent the reactor member supported on the support surface from falling off the support surface. In this state, the orientation of the first transfer unit can be changed so as to face either the reaction chamber or the cleaning chamber.

[0013] In the vapor phase growth apparatus of the present invention, transfer to the MOCVD reactor and transfer to the dry cleaning furnace can be performed automatically.

[0014] FIG. 1 is a cross-sectional view schematically showing a vapor phase growth apparatus according to a first embodiment of the present invention in a plan view; FIG. 2 is a cross-sectional view of an MOCVD reactor of the vapor phase growth apparatus; FIG. 3 is a front view of a locking piece of the vapor phase growth apparatus; FIG. 4 is a diagram illustrating the operation of the vapor phase growth apparatus; FIG. 5 is a flowchart showing the steps of the vapor phase growth apparatus; FIG. 6 is a diagram illustrating the operation of the vapor phase growth apparatus;

[0015] An embodiment of a vapor phase growth apparatus according to the present invention will be described below with reference to FIGS. 1 to 7. As shown in FIG. 1, the vapor phase growth apparatus 1 of this embodiment includes a reaction chamber 10, a first transfer chamber 45, a cleaning chamber 65, a second transfer chamber 70, a reaction atmosphere section 85, a first transfer atmosphere section 90, a cleaning atmosphere section 95, a second transfer atmosphere section 100, and a control unit 105. For example, the reaction chamber 10, the first transfer chamber 45, the cleaning chamber 65, and the second transfer chamber 70 are each formed in a box shape. The cross sections of the reaction chamber 10, the first transfer chamber 45, the cleaning chamber 65, and the second transfer chamber 70 in a plan view are each formed in a rectangular outer edge shape (frame shape). FIG. 1 shows only a susceptor cover 19 of an MOCVD reactor 16, which will be described later.

[0016] The reaction chamber 10 has a sidewall 11. An opening 11a (a communicating portion) is formed in the sidewall 11, penetrating the sidewall 11. The opening 11a is formed in the center of the sidewall 11. A gate valve 13, which serves as a shutter, is attached to the opening 11a. The gate valve 13 can open and close the opening 11a. The reaction chamber 10 accommodates an MOCVD reactor 16 and a plurality of temporary support arms 36. The MOCVD reactor 16 is an apparatus having a known configuration. As shown in FIGS. 1 and 2 , the MOCVD reactor 16 includes a chamber 17, a susceptor 18, a susceptor cover 19, a ceiling plate 20, and a push-up lifting mechanism 21. The susceptor cover 19 and the ceiling plate 20 constitute a reactor member 25.

[0017] As shown in Figure 2, the chamber 17 has a chamber body 26 and a chamber lid 27. The chamber body 26 is formed in a cylindrical shape with a bottom. The chamber lid 27 is formed in a cylindrical shape with a top. The chamber lid 27 is disposed above the chamber body 26 and covers the opening of the chamber body 26. The chamber lid 27 is movable in the up and down direction relative to the chamber body 26. The susceptor 18 is formed in a disk shape. An opening 18a is formed in the center of the susceptor 18, through which a nozzle portion 30 (described later) can be inserted.

[0018] As shown in FIGS. 1 and 2 , the susceptor cover 19 is formed in a disk shape substantially the same as the susceptor 18. An opening 19a is formed in the center of the susceptor cover 19, through which a nozzle unit 30 (described later) can be inserted. As shown in FIG. 1 , a plurality of wafer pockets 19b are formed around the opening 19a in the susceptor cover 19. The wafer W is held in the wafer pockets 19b of the susceptor cover 19 (reactor member 25). As shown in FIG. 2 , the ceiling plate 20 is formed in a disk shape larger than the susceptor 18 in a plan view. An opening 20a is formed in the center of the ceiling plate 20, through which a nozzle unit 30 (described later) can be inserted. The ceiling plate 20 is disposed above the susceptor cover 19 so as to face the susceptor cover 19. Between the ceiling plate 20 and the susceptor cover 19, a flow path L1 for a source gas is formed for growing crystals on the wafer W to form a semiconductor thin film (growing crystals on the wafer W).

[0019] The nozzle unit 30 is disposed in the center of the chamber body 26 and fits into the peripheral edge of the opening 20a in the ceiling plate 20. The nozzle unit 30 supports the ceiling plate 20 and supplies the source gas to the flow path L1. The nozzle unit 30 has a first nozzle wall 30a, a second nozzle wall 30b, a third nozzle wall 30c, and a fourth nozzle wall 30d.

[0020] The first nozzle wall 30a has a cylindrical shape extending in the vertical direction, with the upper end projecting radially outward. The second nozzle wall 30b is tubular with a diameter larger than the cylindrical diameter of the first nozzle wall 30a and has a flange at its upper end. The third nozzle wall 30c is tubular with a diameter larger than the outer diameter of the tubular portion of the second nozzle wall 30b and has a flange at its upper end. The fourth nozzle wall 30d is tubular with a diameter larger than the outer diameter of the tubular portion of the third nozzle wall 30c and has a flange at its upper end. The first nozzle wall 30a, the second nozzle wall 30b, the third nozzle wall 30c, and the fourth nozzle wall 30d are arranged in a nested manner.

[0021] The space formed between adjacent walls in the radial direction among the first nozzle wall 30 a, the second nozzle wall 30 b, the third nozzle wall 30 c, and the fourth nozzle wall 30 d serves as a source gas introduction path L2. For example, when the semiconductor thin film is made of gallium nitride, the source gas includes an organic metal gas, an ammonia gas, and a purge gas.

[0022] For example, the push-up lifting mechanism 21 can move the susceptor cover 19 in the vertical direction. As shown in Figures 1 and 2, the vapor phase growth apparatus 1 includes two sets of reactor members 25, each of which has a susceptor cover 19 and a ceiling plate 20. Hereinafter, one of the two sets of reactor members 25 will be referred to as a susceptor cover 19A, and the other will be referred to as a susceptor cover 19B.

[0023] As shown in Fig. 1, the temporary support arm 36 has a locking piece 37 and a moving portion 38. As shown in Fig. 3, the locking piece 37 is formed with a first step portion 37a and a second step portion 37b. The second step portion 37b is disposed higher than the first step portion 37a. The first step portion 37a can be locked to the susceptor cover 19 from below the susceptor cover 19. The second step portion 37b can be locked to the ceiling plate 20 from below the ceiling plate 20. The moving portion 38 moves the locking piece 37 in the vertical direction and in the direction along the horizontal plane.

[0024] As shown in FIG. 1 , the first transfer chamber 45 shares a sidewall 11 with the reaction chamber 10. The first transfer chamber 45 is disposed adjacent to the sidewall 11 of the reaction chamber 10. The first transfer chamber 45 has sidewalls 46, 47, and 48. When the gate valve 13 is open, the first transfer chamber 45 communicates with the reaction chamber 10. In this manner, the first transfer chamber 45 can communicate with the reaction chamber 10. The reaction chamber 10 and the first transfer chamber 45 are disposed side by side in a first direction X along a horizontal plane. The sidewall 11 and the sidewall 47 are disposed opposite each other. The sidewall 46 and the sidewall 48 are disposed opposite each other. The sidewalls 46, 47, and 48 have openings 46a, 47a, and 48a, respectively, similar to the opening 11a of the sidewall 11. Gate valves 50, 51, and 52, similar to the gate valve 13, are attached to the openings 46a, 47a, and 48a, respectively.

[0025] 4 is housed in the first transfer chamber 45. The first robot arm 55 transfers the reactor member 25 and the wafer W. Details of the first robot arm 55 will be described later.

[0026] As shown in FIG. 1 , the cleaning chamber 65 shares a sidewall 47 with the first transfer chamber 45. The cleaning chamber 65 is disposed on the opposite side of the first transfer chamber 45 from the reaction chamber 10. The reaction chamber 10, the first transfer chamber 45, and the cleaning chamber 65 are arranged in the first direction X in the order of reaction chamber 10, first transfer chamber 45, and cleaning chamber 65. The cleaning chamber 65 is disposed adjacent to the sidewall 47 of the first transfer chamber 45. When the gate valve 51 is open, the cleaning chamber 65 communicates with the first transfer chamber 45. In this way, the cleaning chamber 65 can communicate with the first transfer chamber 45. The cleaning chamber 65 accommodates a known dry cleaning furnace 66. The dry cleaning furnace 66 cleans the reactor components 25.

[0027] The second transfer chamber 70 is a so-called C-to-C chamber into which wafers W are transferred from outside the vapor phase growth apparatus 1 using cassettes 73 and 74 (described later). The second transfer chamber 70 shares a sidewall 48 with the first transfer chamber 45. The second transfer chamber 70 is disposed adjacent to the sidewall 48 of the first transfer chamber 45. The first transfer chamber 45 and the second transfer chamber 70 are disposed along a horizontal plane and aligned in a second direction Y perpendicular to the first direction X. The second transfer chamber 70 has a sidewall 71 disposed opposite the sidewall 48. The sidewall 71 has openings 71a and 71b penetrating the sidewall 71. The openings 71a and 71b are aligned along the sidewall 71. When the gate valve 52 is open, the second transfer chamber 70 is in communication with the first transfer chamber 45. In this manner, the second transfer chamber 70 can communicate with the first transfer chamber 45.

[0028] Cassettes 73 and 74 capable of accommodating wafers W are disposed in the openings 71a and 71b, respectively. For example, the cassette 73 accommodates wafers W (hereinafter also referred to as wafers WB (see FIG. 4)) on which a semiconductor thin film has been formed. Hereinafter, the wafers WB are indicated by hatching. The cassette 74 accommodates wafers W (hereinafter also referred to as wafers WA) on which a semiconductor thin film has not yet been formed. The second transfer chamber 70 accommodates a second robot arm (second transfer unit) 77 and an orienter 78. The second robot arm 77 transfers wafers W between the first transfer chamber 45 and the second transfer chamber 46. Details of the second robot arm 77 will be described later. The orienter 78 is used to adjust the phase of the wafers W.

[0029] 4 , for example, the first robot arm 55 has a base 56, links 57 and 58, joints 59, 60, and 61, and a support portion 62. The base 56 is disposed on the bottom wall 49 of the first transfer chamber 45. For example, the joint 59 adjusts the angle between the base 56 and the link 57, i.e., the orientation of the link 57 relative to the base 56. The joint 60 adjusts the angle between the link 57 and the link 58, i.e., the orientation of the link 58 relative to the link 57. The joint 61 adjusts the angle between the link 58 and the support portion 62, i.e., the orientation of the support portion 62 relative to the link 58.

[0030] The upper surface of the support part 62 is a support surface 62a that supports the reactor member 25. The first robot arm 55 can change its own orientation (first robot arm 55) so that it faces either the reaction chamber 10, the cleaning chamber 65, or the second transfer chamber 70 with the support surface 62a facing upward, through known control by the control unit 105. Note that the first transfer part is not limited to the first robot arm 55 and may be an automatically movable robot or the like. The second robot arm 77 has a similar configuration to the first robot arm 55. The second robot arm 77 can change its own orientation so that it faces either the first transfer chamber 45 or the side wall 71 with the support surface 77a facing upward.

[0031] As shown in FIG. 1, the reaction atmosphere section 85 fills the reaction chamber 10 with nitrogen gas (inert gas). Note that the inert gas is not limited to nitrogen gas, and may be carbon dioxide gas, helium gas, or the like. The dew point of the nitrogen gas is preferably −40° C. or lower. In other words, the dew point of water vapor contained in the nitrogen gas is preferably −40° C. or lower. It is preferable that the nitrogen gas does not contain oxygen gas.

[0032] For example, the reaction atmosphere section 85 includes a pipe, an on-off valve, a pressure gauge, and a scrubber (gas treatment device), which are not shown. A first end of the pipe is connected to the side wall of the reaction chamber 10, communicates with the inside of the reaction chamber 10, and supplies nitrogen gas into the reaction chamber 10. A second end of the pipe opposite the first end is connected to the scrubber (gas treatment device, not shown). The reaction atmosphere section 85 can exhaust air and the like from the reaction chamber 10 or supply nitrogen gas into the reaction chamber 10 through the pipe. The on-off valve and the pressure gauge are provided on the pipe. The pressure gauge measures the pressure inside the reaction chamber 10 through the pipe. The pressure gauge may be provided on the side wall of the reaction chamber 10. The on-off valve opens and closes the pipe, and connects and disconnects the pipe from the outside.

[0033] The first transfer atmosphere section 90, the cleaning atmosphere section 95, and the second transfer atmosphere section 100 are configured similarly to the reaction atmosphere section 85. The first transfer atmosphere section 90 is provided in the first transfer chamber 45. The first transfer atmosphere section 90 fills the first transfer chamber 45 with nitrogen gas. The cleaning atmosphere section 95 is provided in the cleaning chamber 65. The cleaning atmosphere section 95 fills the cleaning chamber 65 with nitrogen gas. The second transfer atmosphere section 100 is provided in the second transfer chamber 70. The second transfer atmosphere section 100 fills the second transfer chamber 70 with nitrogen gas.

[0034] The control unit 105 includes a CPU (Central Processing Unit) and a memory (not shown). The control unit 105 is connected to the gate valves 13, 50, 51, and 52, the moving unit 38 of the temporary support arm 36, the on-off valves of the atmospheric units 85, 90, 95, and 100, and a pressure gauge. The control unit 105 controls the gate valves 13, 50, 51, and 52, the moving unit 38, and the on-off valves of the atmospheric units 85, 90, 95, and 100.

[0035] Next, the operation of the vapor phase growth apparatus 1 configured as described above will be described. FIG. 5 is a flowchart showing the process of the vapor phase growth apparatus 1. In FIG. 1, wafer pockets 19b of the susceptor cover 19A in the MOCVD reactor 16 hold wafers WB after semiconductor thin films have been formed thereon in the MOCVD reactor 16. Note that when semiconductor thin films are formed on the wafers WB, reaction products are generated in the MOCVD reactor 16. Examples of reaction products include amorphous semiconductor thin films (e.g., gallium nitride) and unreacted organometallic components. In the first transfer chamber 45, the support surface 62a of the first robot arm 55 supports the reactor member 25 having the susceptor cover 19B. The wafer pockets 19b of the susceptor cover 19B hold wafers WA before semiconductor thin films are formed thereon in the MOCVD reactor 16. The gate valves 13, 50, 51, and 52 are closed.

[0036] The control unit 105 first fills the reaction chamber 10, the first transfer chamber 45, the cleaning chamber 65, and the second transfer chamber 70 with nitrogen gas using the atmosphere units 85, 90, 95, and 100. At this time, the control unit 105 makes the pressure of the nitrogen gas in the second transfer chamber 70 by the second transfer atmosphere unit 100 higher than the pressure of the nitrogen gas in the first transfer chamber 45 by the first transfer atmosphere unit 90. Furthermore, the control unit 105 makes the pressure of the nitrogen gas in the first transfer chamber 45 by the first transfer atmosphere unit 90 higher than the pressures of the nitrogen gas in the reaction chamber 10 and the cleaning chamber 65 by the reaction atmosphere unit 85 and the cleaning atmosphere unit 95, respectively. For example, the control unit 105 adjusts the pressure of the nitrogen gas in the reaction chamber 10 by opening and closing an on-off valve based on the pressure in the reaction chamber 10 measured by a pressure gauge.

[0037] First, as shown in FIG. 6 , the reactor member 25 having the susceptor cover 19B in the first transfer chamber 45 is swapped with the reactor member 25 having the susceptor cover 19A in the reaction chamber 10. That is, step S11, which is the loading of the reactor member 25 and the wafer WA into the MOCVD reaction furnace 16, and step S13, which is the unloading of the reactor member 25 and the wafer WB into the MOCVD reaction furnace 16, are performed in parallel. At this time, for example, the chamber lid 27 is moved upward with respect to the chamber body 26 of the MOCVD reaction furnace 16. The control unit 105 controls the multiple movement units 38 to lock the susceptor cover 19A and the ceiling plate 20 in the reaction chamber 10 with the steps 37 a, 37 b of the multiple locking pieces 37, as shown in FIG. 3 , and then the susceptor cover 19A and the ceiling plate 20 attached to the MOCVD reaction furnace 16 are retracted upward within the reaction chamber 10.

[0038] The control unit 105 opens the gate valve 13 and changes the direction of the first robot arm 55 so that it faces the reaction chamber 10. The first robot arm 55 transports the susceptor cover 19B and the ceiling plate 20 supported by the support surface 62a into the reaction chamber 10 through the opening 11a in the side wall 11 and attaches them to the MOCVD reactor 16.

[0039] The susceptor cover 19A and the ceiling plate 20, which are supported by the multiple locking pieces 37, are supported by the support surface 62a of the first robot arm 55. The first robot arm 55 moves the supported susceptor cover 19A and the ceiling plate 20 into the first transfer chamber 45. Next, as shown in FIG. 7 , the control unit 105 opens the gate valve 52 and causes the second robot arm 77 to move the wafer WB held by the susceptor cover 19A to the cassette 73 within the first transfer chamber 45. In parallel with steps S11 and S13, as shown in FIG. 4 , the first robot arm 55 loads the reactor member 25, which has the susceptor cover 19A supported by the support surface 62a, into the dry cleaning furnace 66 in the cleaning chamber 65 (step S16). Next, a semiconductor thin film is formed on wafer WA held by susceptor cover 19B in MOCVD reactor 16 to produce wafer WB (step S12). The formation of semiconductor thin films in MOCVD reactor 16 is performed using a known procedure. In parallel with step S12, reactor member 25 including susceptor cover 19A is cleaned in dry cleaning furnace 66 (step S17).

[0040] 6, the first robot arm 55 supports the reactor member 25 having the susceptor cover 19A cleaned in the dry cleaning furnace 66 on the support surface 62a and transfers it into the first transfer chamber 45 (step S18). The second robot arm 77 holds the wafer WA in the cassette 74 before a semiconductor thin film is formed thereon in the wafer pocket 19b of the susceptor cover 19A. Next, the susceptor cover 19A in the first transfer chamber 45 is swapped with the susceptor cover 19B in the reaction chamber 10. That is, step S11, which is the transfer of the reactor member 25 and the wafer WA into the MOCVD reactor 16, and step S13, which is the transfer of the reactor member 25 and the wafer WB from the MOCVD reactor 16, are performed in parallel.

[0041] By performing steps S11 to S18 performed on susceptor cover 19A on susceptor cover 19B with the steps shifted, semiconductor thin films can be formed alternately on wafers WA held by susceptor covers 19A and 19B.

[0042] As described above, in the vapor phase growth apparatus 1 of this embodiment, a crystal can be grown on a wafer W held in the reactor member 25 by the MOCVD reactor 16, and the reactor member 25 can be cleaned by the dry cleaning furnace 66. The reaction chamber 10, which houses the MOCVD reactor 16, and the cleaning chamber 65, which houses the dry cleaning furnace 66, are disposed adjacent to each other with respect to the first transfer chamber 45, which houses the first robot arm 55, and can communicate with each other. Therefore, the distance between the reaction chamber 10 and the first transfer chamber 45 and the distance between the cleaning chamber 65 and the first transfer chamber 45 are shorter than when, for example, other chambers are disposed between the reaction chamber 10 and the first transfer chamber 45 and between the cleaning chamber 65 and the first transfer chamber 45. Therefore, the first robot arm 55 can automatically transfer the wafer W and the reactor member 25 to the MOCVD reactor 16 through the communicating portion, and can also automatically transfer the reactor member 25 to the dry cleaning furnace 66 .

[0043] The vapor phase growth apparatus 1 includes a reactive atmosphere unit 85, a first transfer atmosphere unit 90, and a control unit 105. Therefore, the reactive atmosphere unit 85 can fill the reaction chamber 10 with nitrogen gas, and the first transfer atmosphere unit 90 can fill the first transfer chamber 45 with nitrogen gas. The control unit 105 then controls the pressure of the nitrogen gas in the first transfer chamber 45 by the first transfer atmosphere unit 90 to be higher than the pressure of the nitrogen gas in the reaction chamber 10 by the reactive atmosphere unit 85. Therefore, nitrogen gas flows from the first transfer chamber 45 toward the reaction chamber 10 through a communication portion between the first transfer chamber 45 and the reaction chamber 10. This prevents reaction products generated in the MOCVD reactor 16 from flowing into the first transfer chamber 45 through the communication portion.

[0044] If the vapor phase growth apparatus did not include the first transfer chamber 45 and the first robot arm 55, an operator would transfer the reactor member 25 between the MOCVD reactor 16 and the dry cleaning furnace 66. The transferred reactor member 25 was exposed to the atmosphere. Therefore, baking of the reactor member 25 was necessary before step S12, which is the growth of a semiconductor thin film on the reactor member 25. In the vapor phase growth apparatus 1 of this embodiment, the reactor member 25 is not exposed to the atmosphere in the first transfer chamber 45, so baking of the reactor member 25 is not necessary. Therefore, the cycle time required for processing the wafer W can be shortened compared to conventional vapor phase growth apparatuses.

[0045] The vapor phase growth apparatus 1 includes a cleaning atmosphere section 95. By filling the cleaning chamber 65 with nitrogen gas using the cleaning atmosphere section 95, it is possible to prevent the reactor members 25 from being exposed to the atmosphere not only in the first transfer chamber 45 and the reaction chamber 10 but also in the cleaning chamber 65.

[0046] The vapor phase growth apparatus 1 includes a second transfer chamber 70 and a second transfer atmosphere unit 100. The second transfer atmosphere unit 100 controls the pressure of nitrogen gas in the second transfer chamber 70 to be higher than the pressure of nitrogen gas in the first transfer chamber 45 to be higher than the pressure of nitrogen gas in the first transfer chamber 45 to be higher than the pressure of nitrogen gas in the first transfer chamber 45 to be higher than the pressure of nitrogen gas in the first transfer chamber 45 to be higher than the pressure of nitrogen gas in the first transfer chamber 45 to be higher than the pressure of nitrogen gas in the first transfer chamber 45 to be higher than the pressure of nitrogen gas in the first transfer chamber 45 to be higher than the pressure of nitrogen gas in the first transfer atmosphere unit 90 ...

[0047] The dew point of nitrogen gas may be −40°C or lower, and the nitrogen gas may not contain oxygen gas. In this case, not only is moisture in the nitrogen gas prevented from adhering to the wafer W, but oxidation of the wafer W or the like in the nitrogen gas atmosphere can also be prevented. The first robot arm 55 can change its own orientation so that it faces one of the reaction chamber 10, the cleaning chamber 65, and the second transfer chamber 70 while the support surface 62a faces upward. This prevents the reactor member 25 supported on the support surface 62a from falling off the support surface 62a. In this state, the orientation of the first robot arm 55 can be changed so that it faces one of the reaction chamber 10, the cleaning chamber 65, and the second transfer chamber 70.

[0048] Although one embodiment of the present invention has been described above in detail with reference to the drawings, the specific configuration is not limited to this embodiment, and configuration changes, combinations, deletions, etc. are also included within the scope of the present invention. For example, in the above embodiment, the reaction chamber 10, the first transfer chamber 45, and the cleaning chamber 65 are arranged in this order in the first direction X. However, the cleaning chamber may be arranged on the opposite side of the first transfer chamber 45 from the second transfer chamber 70, and the reaction chamber 10, the first transfer chamber 45, and the cleaning chamber may be arranged in an L-shape in plan view.

[0049] In the embodiment, the control unit 105 may control the pressure of the nitrogen gas in the second transfer chamber 70 by the second transfer atmosphere unit 100 to be equal to or lower than the pressure of the nitrogen gas in the first transfer chamber 45 by the first transfer atmosphere unit 90. The control unit 105 may control the pressure of the nitrogen gas in the first transfer chamber 45 by the first transfer atmosphere unit 90 to be equal to or lower than the pressure of the nitrogen gas in the reaction chamber 10 and the cleaning chamber 65 by the reaction atmosphere unit 85 and the cleaning atmosphere unit 95.

[0050] The support surface 62a of the first robot arm 55 may face sideways. The vapor phase growth apparatus 1 does not necessarily have to include the second transfer chamber 70, the atmospheric sections 85, 90, 95, 100, and the control section 105.

[0051] REFERENCE SIGNS LIST 1 Vapor phase growth apparatus 10 Reaction chamber 16 MOCVD reactor 25 Reaction furnace member 45 First transfer chamber 55 First robot arm (first transfer section) 62a Support surface 65 Cleaning chamber 66 Dry cleaning furnace 70 Second transfer chamber 85 Reaction atmosphere section 90 First transfer atmosphere section 95 Cleaning atmosphere section 100 Second transfer atmosphere section 105 Control section W Wafer

Claims

1. A vapor phase growth apparatus comprising: a reaction chamber housing an MOCVD reactor for growing crystals on a wafer held in a reactor member; a first transfer chamber housing a first transfer unit for transporting the reactor member and the wafer, the first transfer chamber being disposed adjacent to the reaction chamber and capable of communicating with the reaction chamber; and a cleaning chamber housing a dry cleaning furnace for cleaning the reactor member, the first transfer chamber being disposed adjacent to the first transfer chamber and capable of communicating with the first transfer chamber.

2. A vapor phase growth apparatus as described in claim 1, comprising: a reaction atmosphere section which fills the reaction chamber with an inert gas; a first transfer atmosphere section which fills the first transfer chamber with the inert gas; and a control section which controls the reaction atmosphere section and the first transfer atmosphere section, wherein the control section makes the pressure of the inert gas in the first transfer chamber by the first transfer atmosphere section higher than the pressure of the inert gas in the reaction chamber by the reaction atmosphere section.

3. The vapor phase growth apparatus according to claim 2, further comprising a cleaning atmosphere section for filling the cleaning chamber with an inert gas.

4. A vapor phase growth apparatus as described in claim 2, comprising: a second transfer chamber that accommodates a second transfer unit that transfers the wafer between the first transfer chamber, is arranged adjacent to the first transfer chamber, and is capable of communicating with the first transfer chamber; and a second transfer atmosphere unit that fills the second transfer chamber with the inert gas, wherein the control unit makes the pressure of the inert gas in the second transfer chamber by the second transfer atmosphere unit higher than the pressure of the inert gas in the first transfer chamber by the first transfer atmosphere unit.

5. The vapor phase growth apparatus according to claim 2, wherein the inert gas has a dew point of -40° C. or lower and does not contain oxygen gas.

6. A vapor phase growth apparatus as described in claim 1 or 2, wherein the first transport part is capable of changing its orientation so as to face either the reaction chamber or the cleaning chamber with the support surface supporting the reactor member facing upward.

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