Display panel and display apparatus

Abstract

The present application discloses a display panel and a display apparatus. The display panel comprises a base substrate, a first semiconductor layer, an insulative isolating layer, a photosensitive layer, a second semiconductor layer, and a light-emitting layer. The first semiconductor layer comprises a first electrode corresponding to a non-light emitting region. The insulative isolating layer comprises a first opening corresponding to the first electrode. The second semiconductor layer comprises a second electrode corresponding to the first opening. A photosensitive portion is arranged between the first electrode and the second electrode and is connected to the first electrode and the second electrode.

Description

Display panel and display device Technical Field

[0001] The present application relates to the field of display technology, and in particular to a display panel and a display device. Background Art

[0002] With the development of display panels, in-screen integration technology has become one of the important development directions of display panels. For example, in-screen ambient light technology, optical fingerprint technology, temperature sensors, etc., convert light, heat and other signals into readable electrical signals to obtain the corresponding light or heat signals.

[0003] In existing AMOLED display panels with integrated light control sensors, the manufacturing process of AMOLED display panels is relatively complex. When the imaging light path and optical sensors are integrated into the display screen, the complexity of the process is further deepened, thereby reducing the product yield. SUMMARY OF THE INVENTION

[0004] The present application provides a display panel and a display device to solve the technical problem of complex manufacturing process of existing AMOLED display panels.

[0005] To solve the above problem, the technical solution provided by this application is as follows:

[0006] The present application provides a display panel comprising a light-emitting area and a non-light-emitting area disposed between the light-emitting areas. The display panel further comprises:

[0007] substrate;

[0008] A first semiconductor layer is provided on one side of the base substrate, the first semiconductor layer comprising: a first active portion provided corresponding to the light-emitting area and a first electrode corresponding to the non-light-emitting area, the first active portion comprising a first semiconductor material, and the first electrode comprising a conductive first semiconductor material;

[0009] an insulating isolation layer, disposed on a side of the first semiconductor layer away from the base substrate, the insulating isolation layer comprising: a first opening disposed in the non-luminous region and corresponding to the first electrode, the first opening exposing a surface of the first electrode away from the base substrate;

[0010] a photosensitive layer, disposed on a side of the insulating isolation layer away from the base substrate, the photosensitive layer comprising a photosensitive portion disposed corresponding to the first opening;

[0011] a second semiconductor layer, disposed on a side of the insulating isolation layer and the photosensitive layer away from the base substrate, the second semiconductor layer comprising: a second active portion disposed corresponding to the light-emitting region and a second electrode disposed corresponding to the first opening, the second active portion comprising a second semiconductor material, the second electrode comprising a conductive second semiconductor material, and the photosensitive portion disposed between the first electrode and the second electrode;

[0012] The light emitting layer is arranged on a side of the second semiconductor layer away from the base substrate, and the light emitting layer includes light emitting units arranged corresponding to the light emitting areas.

[0013] The present application further provides a display device, comprising a display panel, wherein the display panel comprises a light-emitting area and a non-light-emitting area disposed between the light-emitting areas, and further comprising:

[0014] substrate;

[0015] A first semiconductor layer is provided on one side of the base substrate, the first semiconductor layer comprising: a first active portion provided corresponding to the light-emitting area and a first electrode corresponding to the non-light-emitting area, the first active portion comprising a first semiconductor material, and the first electrode comprising a conductive first semiconductor material;

[0016] an insulating isolation layer, disposed on a side of the first semiconductor layer away from the base substrate, the insulating isolation layer comprising: a first opening disposed in the non-luminous region and corresponding to the first electrode, the first opening exposing a surface of the first electrode away from the base substrate;

[0017] a photosensitive layer, disposed on a side of the insulating isolation layer away from the base substrate, the photosensitive layer comprising a photosensitive portion disposed corresponding to the first opening;

[0018] a second semiconductor layer, disposed on a side of the insulating isolation layer and the photosensitive layer away from the base substrate, the second semiconductor layer comprising: a second active portion disposed corresponding to the light-emitting region and a second electrode disposed corresponding to the first opening, the second active portion comprising a second semiconductor material, the second electrode comprising a conductive second semiconductor material, and the photosensitive portion disposed between the first electrode and the second electrode;

[0019] The light emitting layer is arranged on a side of the second semiconductor layer away from the base substrate, and the light emitting layer includes light emitting units arranged corresponding to the light emitting areas. BRIEF DESCRIPTION OF THE DRAWINGS

[0020] FIG1 is a first structural diagram of a display panel of the present application;

[0021] FIG2 is an enlarged view of a portion of the film layer in the display panel of the present application;

[0022] FIG3 is a second structural diagram of the display panel of the present application;

[0023] FIG4 is a structural diagram of a sub-pixel driving circuit within a sub-pixel in a display panel of the present application;

[0024] FIG5 is a diagram showing the steps of the method for manufacturing a display panel of the present application;

[0025] 6a to 6e are process diagrams of a method for manufacturing an array substrate of the present application. Modes for Carrying Out the Invention

[0026] The technical solutions in the embodiments of the present application will be clearly and completely described below in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments are only a part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without making creative work are within the scope of protection of the present application. In addition, it should be understood that the specific implementation methods described herein are only used to illustrate and explain the present application, and are not used to limit the present application. In the present application, unless otherwise specified, the directional words used, such as "upper" and "lower", generally refer to the upper and lower parts of the device in actual use or working state, specifically the drawing direction in the accompanying drawings; and "inside" and "outside" refer to the outline of the device.

[0027] Referring to FIG. 1 to FIG. 4 , the present application provides a display panel 100 . The display panel 100 may include light-emitting areas 201 and non-light-emitting areas 301 disposed between the light-emitting areas 201 .

[0028] In this embodiment, the display panel 100 includes a base substrate 10 and an array layer 20 disposed on the base substrate 10 . The array layer 20 may include a pixel driving unit 200 disposed in a light-emitting area 201 and a photosensitive device 300 disposed in a non-light-emitting area 301 .

[0029] In this embodiment, the display panel 100 may include a base substrate 10, a first semiconductor layer 230 arranged on one side of the base substrate 10, an insulating isolation layer arranged on the side of the first semiconductor layer 230 away from the base substrate 10, a photosensitive layer arranged on the side of the insulating isolation layer away from the base substrate 10, a second semiconductor layer 260 arranged on the side of the insulating isolation layer and the photosensitive layer away from the base substrate 10, and a light-emitting layer arranged on the side of the second semiconductor layer 260 away from the base substrate 10.

[0030] In this embodiment, the first semiconductor layer 230 includes a first active portion 232 corresponding to the light-emitting region 201 and a first electrode 231d corresponding to the non-light-emitting region 301, the first active portion 232 includes a first semiconductor material, and the first electrode 231d includes a conductive first semiconductor material; the insulating isolation layer includes a first opening 330 provided in the non-light-emitting region 301 and corresponding to the first electrode, the first opening 330 exposing a side surface of the first electrode 231d away from the substrate 10; the photosensitive layer includes a photosensitive layer provided corresponding to the first opening 330. The light-emitting portion 320; the second semiconductor layer 260 includes a second active portion 262 arranged corresponding to the light-emitting area 201 and a second electrode 261a arranged corresponding to the first opening 330, the second active portion 262 includes a second semiconductor material, the second electrode 261a includes a conductive second semiconductor material, the photosensitive portion 320 is arranged between the first electrode 231d and the second electrode 261a, and the first electrode 231d, the photosensitive portion 320 and the second electrode 261a constitute a photosensitive device; the light-emitting layer 340 includes a light-emitting unit arranged corresponding to the light-emitting area 201.

[0031] In this embodiment, the first electrode 231d can be formed in the same mask process as the first active portion 232 in the light-emitting area 201, and the second electrode 261a can be formed in the same mask process as the second active portion 262 in the light-emitting area 201; the present application reduces the number of mask times of the display panel 100 and simplifies the process of the display panel 100 by using a conductive first semiconductor material and a second semiconductor material to respectively form the first electrode 231d and the second electrode 261a of the photosensitive device in the non-light-emitting area 301 when preparing the film layer of the light-emitting area 201.

[0032] It should be noted that the second electrode 261 a may be a transparent electrode made of a transparent material.

[0033] It should be noted that the material of the first electrode 231d and the material of the second electrode 261a can be the same or different; for example, the material of the first electrode 231d includes one of conductive low-temperature polysilicon or metal oxide, and the material of the second electrode 261a includes the other of conductive low-temperature polysilicon or metal oxide; or, the materials of the first electrode 231d and the second electrode 261a can both include one of conductive low-temperature polysilicon or metal oxide.

[0034] It should be noted that the display panel 100 may include multiple sub-pixels of different luminous colors. The arrangement of the multiple sub-pixels is not limited in this application. Three first sub-pixels 200a, second sub-pixels 200b and third sub-pixels 200c of different colors can constitute a pixel driving unit 200. One pixel driving unit 200 can correspond to at least one photosensitive device 300. Multiple photosensitive devices 300 can be distributed in an array in the form of dots on the display panel 100. In the following embodiments, the cardinality scheme of this application is illustrated using a structure consisting of a pixel driving unit 200 and a photosensitive device 300.

[0035] It should be noted that in the structures of Figures 1 and 3 , to simplify the drawings, the active portion structures of the second and third sub-pixels 200b and 200c of this application are briefly illustrated using low-temperature polysilicon, while the active portion structure of the first sub-pixel 200a is illustrated using a combination of low-temperature polysilicon and metal oxide. In actual products, the active portion structures of the second and third sub-pixels 200b and 200c can be the same as that of the first sub-pixel 200a.

[0036] It should be noted that the sub-pixel driving circuits of the first sub-pixel 200a, the second sub-pixel 200b, and the third sub-pixel 200c may have a 7T1C, 7T2C, or 8T2C structure. For example, FIG4 shows an equivalent circuit structure diagram of an 8T2C sub-pixel circuit.

[0037] 4 , the sub-pixel circuit 20 may include a driving transistor T1 , a switching transistor T2 , a compensation transistor T3 , a first initialization transistor T4 , a first emission control transistor T5 , a second emission control transistor T6 , a second initialization transistor T7 , and a third initialization transistor T8 .

[0038] Please refer to Figure 4, the switching transistor T2 and the driving transistor T1 are connected to the first node A, the compensation transistor T3 is connected to the first scan signal line Nscan1, the compensation transistor T3, the driving transistor T1 and the light-emitting device LED are connected to the second node B, the first initialization transistor T4 is connected to the second scan signal line Nscan2, the first initialization transistor T4, the driving transistor T1 and the compensation transistor T3 are connected to the third node Q, and the first initialization transistor T4 is connected to the first initialization signal line Vi1.

[0039] Please refer to Figure 4, the gate of the switching transistor T2 is connected to the third scan signal line Pscan1, and the first electrode 231d of the switching transistor T2 is connected to the data signal line Data; the first electrode 231d of the second initialization transistor T7 is connected to the second initialization signal line Vi2, the second electrode 261a of the second initialization transistor T7 is connected to the light-emitting device LED at the fourth node C, and the gate of the second initialization transistor T7 is connected to the fourth scan signal line Pscan2; the first light-emitting control transistor T5 is connected to the driving transistor T1 through the first node A, and the first light-emitting control transistor T5 is connected to the light-emitting control signal line EM; the second light-emitting control transistor T6 is connected to the driving transistor T1 through the second node B; the third initialization transistor T8 is connected to the anode reset line Vi3; the light-emitting device LED is connected to the constant voltage low level line VSS.

[0040] Please refer to Figure 4. The sub-pixel circuit 20 also includes a storage capacitor Cst and a boost capacitor Cboost. One end of the storage capacitor Cst is connected to the constant voltage high level line VDD, and the other end of the storage capacitor Cst is connected to the third node Q; one end of the boost capacitor Cboost is connected to the gate of the switching transistor T2, and the other end of the boost capacitor Cboost is connected to the third node Q.

[0041] Please refer to Figure 4. The present application controls the first light-emitting control transistor T5 and the second light-emitting control transistor T6 through the light-emitting control signal line EM, controls the compensation transistor T3 through the first scanning signal line Nscan1, controls the first initialization transistor T4 through the second scanning signal line Nscan2, controls the switching transistor T2 through the third scanning signal line Pscan1, and controls the second initialization transistor T7 and the third initialization transistor T8 through the fourth scanning signal line Pscan2, so as to achieve normal operation of the display panel 100.

[0042] It should be noted that the photosensitive device 300 can be an optical fingerprint recognition sensor, and other sensors that need to collect optical data are also applicable to this application.

[0043] The technical solution of this application is now described in conjunction with specific embodiments.

[0044] 1 and 2 , the display panel 100 may include a base substrate 10, an array layer 20 disposed on the base substrate 10, a light-emitting device layer 30 disposed on the array layer 20, an encapsulation layer 50 disposed on the light-emitting device layer 30, a touch layer 60 disposed on the encapsulation layer 50, and a color filter layer 70 disposed on the touch layer 60.

[0045] In this embodiment, when the display panel 100 is a bottom-emitting light-emitting display device or a double-sided light-emitting display device, a transparent substrate can be used. When the display panel 100 is a top-emitting light-emitting display device, a semi-transparent or opaque substrate as well as a transparent substrate can be used. The display panel 100 of this application is described using a top-emitting display device as an example.

[0046] In this embodiment, the driving circuits for different sub-pixels can be configured differently based on the differences between sub-pixels of different colors. For example, the semiconductor layer material of the thin-film transistor in the sub-pixel can include IGZO (indium gallium zinc oxide), a-Si (amorphous silicon), or LTPS (low-temperature polycrystalline silicon). In this application, the semiconductor layer of at least some sub-pixels can be LTPO, which combines IGZO and LTPS. In the embodiment of Figure 1, the semiconductor layer of some thin-film transistors of the green sub-pixel is configured as a combination of IGZO and LTPS, and the semiconductor layers of the blue and red sub-pixels are LTPS structures, to illustrate the cardinality scheme of this application.

[0047] In this embodiment, the base substrate 10 is used to support the various film layers provided thereon. The base substrate 10 can be made of an insulating material such as glass, quartz, or a polymer resin. The base substrate 10 can be a rigid substrate or a flexible substrate that can be bent, folded, or rolled. Examples of flexible materials for the flexible substrate include, but are not limited to, polyimide (PI).

[0048] In this embodiment, the base substrate 10 may include a first flexible substrate 101, a first barrier layer 102, a second flexible substrate 103, and a second barrier layer 104 that are stacked. The first flexible substrate 101 and the second flexible substrate 103 may be formed of the same material, such as polyimide, and the first barrier layer 102 and the second barrier layer 104 may be formed of an inorganic material, for example, including at least one of SiOx and SiNx.

[0049] In this embodiment, the first flexible substrate 101 is formed by coating a polymeric material on a supporting substrate (not shown) and then curing the polymeric material. The second flexible substrate 103 is formed by coating the same material as the first flexible substrate 101 and curing the material. The second flexible substrate 103 is formed by the same method as the method for forming the first flexible substrate 101. Each of the first flexible substrate 101 and the second flexible substrate 103 can be formed to have a thickness of about 8 μm to about 12 μm. In addition, when the base substrate 10 is formed of the first flexible substrate 101 and the second flexible substrate 103, small holes, cracks, etc. formed during the manufacture of the first flexible substrate 101 are covered by the second flexible substrate 103, thereby eliminating such defects.

[0050] Referring to Figures 1 and 2, the array layer 20 may include a light-shielding layer 210, a buffer layer 221, a first semiconductor layer 230, a first gate insulation layer 222, a first gate electrode layer 240, a second gate insulation layer 223, a second gate electrode layer 250, a first interlayer insulation layer 224, a second semiconductor layer 260, a third gate insulation layer 225, a third gate electrode layer 270, a second interlayer insulation layer 226, a first source-drain electrode layer 280, a first planarizing layer 227, a second source-drain electrode layer 290, and a second planarizing layer 228.

[0051] In this embodiment, the light-shielding layer 210 is arranged on the second blocking layer 104. The light-shielding layer 210 is used to block external light from entering the thin film transistor from the bottom. The material of the light-shielding layer 210 can be composed of black light-shielding material, such as black light-shielding metal or black organic material.

[0052] In this embodiment, the buffer layer 221 is arranged on the light-shielding layer 210. The buffer layer 221 is used to isolate the light-shielding layer 210 from the upper metal material. The material of the buffer layer 221 may include a compound composed of nitrogen, silicon and oxygen elements, such as a single-layer silicon oxide film layer, or a silicon oxide-silicon nitride stacked structure.

[0053] In this embodiment, the first semiconductor layer 230 is disposed on the buffer layer 221, and the second semiconductor layer 260 can be disposed on the first interlayer insulating layer 224. The materials of the first semiconductor layer 230 and the second semiconductor layer 260 can be IGZO (indium gallium zinc oxide), a-Si (amorphous silicon) or LTPS (low-temperature polycrystalline silicon). For example, in this application, the material of the first semiconductor layer 230 can be LTPS, and the material of the second semiconductor layer 260 can be IGZO.

[0054] In this embodiment, the first gate insulating layer 222, the second gate insulating layer 223, the first interlayer insulating layer 224, the third gate insulating layer 225, and the second interlayer insulating layer 226 are respectively arranged on the corresponding metal layers or semiconductor layers, and are separated by different layers of metal layers or semiconductor layers; the materials of the first gate insulating layer 222, the second gate insulating layer 223, the first interlayer insulating layer 224, the third gate insulating layer 225, and the second interlayer insulating layer 226 can be an inorganic substance composed of nitride oxide silicon or an organic material with flatness.

[0055] In this embodiment, the first gate layer 240, the second gate layer 250 and the third gate layer 270 are respectively arranged on the corresponding insulating layers. The first gate layer 240 includes a first gate 241 located in the corresponding sub-pixel, which is used to provide a voltage to turn on the first semiconductor layer 230. The second gate layer 250 includes a second gate 251 located in the corresponding sub-pixel. The first gate 241 and the second gate 251 can constitute a storage capacitor. At the same time, the second gate layer 250 also includes a first switching gate 252 corresponding to the second semiconductor layer 260. The third gate layer 270 includes a second switching gate 271 corresponding to the second semiconductor layer 260. The first switching gate 252 and the second switching gate 271 are arranged on both sides of the second semiconductor layer 260. The first switching gate 252 and the second switching gate 271 are used to provide a voltage to turn on the second semiconductor layer 260. The materials of the first gate layer 240, the second gate layer 250 and the third gate layer 270 can be copper, molybdenum or molybdenum-titanium alloy.

[0056] In this embodiment, the first source-drain electrode layer 280 is arranged on the first flat layer 227, and the second source-drain electrode layer 290 is arranged on the second flat layer 228. The first source-drain electrode layer 280 includes a source and a drain located in the corresponding sub-pixel, and the second source-drain electrode layer 290 includes a connecting electrode 291 to electrically connect the source or drain in the first source-drain electrode layer 280 to the anode in the light-emitting device layer 30; the material of the second metal layer can be copper or molybdenum-titanium alloy, copper or titanium, etc.

[0057] In this embodiment, the first planarization layer 227 and the second planarization layer 228 are laid in a whole layer to ensure the flatness of the film layer of the array layer 20; the material of the planarization layer can be an inorganic material composed of nitride oxide silicon or an organic material with flatness.

[0058] In this embodiment, referring to FIG. 1 and FIG. 2 , the light emitting device layer 30 may further include an anode layer 310 disposed on the second planar layer 228 , a light emitting layer 340 disposed on the anode layer 310 , and a cathode layer disposed on the light emitting layer 340 .

[0059] In this embodiment, the display panel 100 also includes a pixel definition layer 40 arranged on the array layer 20, and the pixel definition layer 40 covers the anode layer 310; the anode layer 310 includes a plurality of anodes, the pixel definition layer 40 includes a plurality of pixel openings 410 corresponding one-to-one to the plurality of anodes, and each pixel opening 410 corresponds to exposing the upper surface of an anode, the light-emitting layer 340 may include a plurality of light-emitting units corresponding one-to-one to the plurality of anodes, the light-emitting units may be arranged in the corresponding pixel openings 410, and the cathode layer may be laid on the pixel definition layer 40 as a whole layer to contact the plurality of light-emitting units.

[0060] In this embodiment, the encapsulation layer 50 can be covered on the cathode layer and continuously cover multiple pixel openings 410 and multiple light-emitting units; wherein, the encapsulation layer 50 can at least include a first inorganic encapsulation layer 50, a first organic encapsulation layer 50 and a second inorganic encapsulation layer 50 stacked on the pixel definition layer 40.

[0061] In this embodiment, the touch layer 60 may include a first touch metal layer and a second touch metal layer disposed on the encapsulation layer 50, as well as insulating isolation layers disposed between the first touch metal layer and the second touch metal layer, and above and below the first touch metal layer and the second touch metal layer. The touch layer 60 provided in this embodiment of the application may be of a mutual capacitance type or a self-capacitance type. The specific type and structure of the touch layer 60 may be selected based on actual needs.

[0062] In this embodiment, the color filter layer 70 may include a black matrix 710 and a color resist layer disposed on the touch layer 60. The color resist layer may include a plurality of color resist units 721 of different colors, such as a red color resist unit 721, a green color resist unit 721, and a blue color resist unit 721. The black matrix 710 layer is provided with a plurality of openings corresponding to the pixel driving unit 200, and the plurality of color resist units 721 of different colors are disposed in the corresponding plurality of openings.

[0063] In this embodiment, the display panel 100 may further include a photosensitive driving transistor ST arranged in the non-luminous area 301; the photosensitive driving transistor ST includes a driving active portion 231, and the driving active portion 231 includes a driving channel 231a and a source connecting portion 231b and a drain connecting portion 231c arranged on both sides of the driving channel 231a.

[0064] In this embodiment, the drain connection portion 231c is electrically connected to the driving drain ST2 of the photosensitive driving transistor ST, and at least part of the source connection portion 231b is reused as the first electrode 231d; or, the source connection portion 231b is electrically connected to the driving source ST1 of the photosensitive driving transistor ST, and at least part of the drain connection portion 231c is reused as the first electrode 231d.

[0065] For example, one of the driving source ST1 or the driving drain ST2 of the photosensitive driving transistor ST, that is, the one not multiplexed as the first electrode 231d, can be indirectly electrically connected to the second electrode 261a, that is, other electronic components can be electrically connected in between.

[0066] In this embodiment, the driving source electrode ST1 and the driving drain electrode ST2 of the light-sensing driving transistor ST can be formed by the material of the first source-drain electrode layer 280 in the same photomask process.

[0067] In the display panel 100 of the present application, referring to Figures 1 and 2, the pixel driving unit 200 may include a first pixel driving unit constituting a first sub-pixel 200a. The first sub-pixel 200a may be one of a red sub-pixel, a green sub-pixel, and a blue sub-pixel. This embodiment is described by taking the first sub-pixel 200a as a green sub-pixel as an example.

[0068] In this embodiment, the first pixel driving portion may include a first active portion 232 and a second active portion 262. The first active portion 232 may include a first channel 232a and a first conductor portion 232b arranged on both sides of the first channel 232a. The second active portion 262 may include a second channel 262a and a second conductor portion 262b arranged on both sides of the second channel 262a. The first active portion 232 and the second active portion 262 are arranged non-overlappingly.

[0069] In this embodiment, the driving active portion 231 and the first active portion 232 are made of the same material, and the driving active portion 231 and the first active portion 232 are arranged on the surface of the buffer layer 221, that is, the driving active portion 231 and the first active portion 232 are both formed from the material of the first semiconductor layer 230 in the same mask process; the second electrode 261a and the second active portion 262 are made of the same material, and the second active portion 262 and at least part of the second electrode 261a are arranged on the surface of the first interlayer insulating layer 224, that is, the second electrode 261a and the second active portion 262 are both formed from the material of the second semiconductor layer 260 in the same mask process.

[0070] In this embodiment, the driving active portion 231 and the first active portion 232 may be made of low-temperature polysilicon, and the second electrode 261 a and the second active portion 262 may be made of transparent indium gallium zinc oxide.

[0071] In this embodiment, the second electrode 261a is disposed on the photosensitive portion 320 . To ensure sufficient contact between the second electrode 261a and the photosensitive portion 320 , the second electrode 261a may completely cover the photosensitive portion 320 , and a portion of the second electrode 261a may contact the surface of the first interlayer insulating layer 224 .

[0072] In this embodiment, the first semiconductor layer 230 can be converted into P by heavily doping the active materials on both sides of the channel region with boron ions or phosphorus ions. + or N + polysilicon to make the first conductor portion 232b and the first electrode 231d conductive; at the same time, the second semiconductor layer 260 can use boron ion heavy doping, plasma bombardment, annealing and other processes on the active material that needs to be conductive to make the second conductor portion 262b and the second electrode 261a conductive.

[0073] The present application forms the first electrode 231d in the photosensitive device 300 simultaneously when forming the first active portion 232 in the first pixel driving portion, and forms the second electrode 261a in the photosensitive device 300 simultaneously when forming the second active portion 262 in the first sub-pixel 200a, so as to utilize conductive low-temperature polysilicon and metal oxide to form the first electrode 231d and the second electrode 261a in the photosensitive device 300, and simultaneously form the pixel driving portion 200 and the photosensitive device 300 in the film layer process of the array layer 20, thereby reducing the number of masking operations of the display panel 100 and simplifying the process of the display panel 100.

[0074] In the display panel 100 of the present application, referring to Figures 1 and 2, the photosensitive device 300 may further include an insulating isolation layer and a first opening 330 opened on the insulating isolation layer, the insulating isolation layer is arranged between the driving active portion 231 and the second active portion 262, the first opening 330 passes through the insulating isolation layer, the photosensitive portion 320 may overlap on the side wall of the first opening 330, and the photosensitive portion 320 is electrically connected to one of the two first electrodes 231d through the first opening 330.

[0075] In this embodiment, the insulating isolation layer may include a first gate insulating layer 222, a second gate insulating layer 223, and a first inter-insulating layer 224, and the first opening 330 may penetrate a portion of the first gate insulating layer 222 and all of the second gate insulating layer 223 and the first inter-insulating layer 224 to expose a portion of the first electrode 231d.

[0076] In this embodiment, the material of the photosensitive portion 320 may be a-Si.

[0077] In this embodiment, the driving transistor may further include a photosensitive gate 242 arranged on the driving active portion 231. The photosensitive gate 242 and the first gate 241 are made of the same material. The photosensitive gate 242 and the first gate 241 are arranged on the surface of the first gate insulation layer 222, that is, the photosensitive gate 242 and the first gate 241 are both formed by the material of the first gate layer 240 in the same mask process.

[0078] In this embodiment, the first electrode 231d, the photosensitive portion 320 and the second electrode 261a constitute the photosensitive device of the present application, namely, a photosensitive diode; when the incident light is irradiated on the photosensitive diode, the photosensitive portion 320 absorbs the incident light and converts it into photocurrent; secondly, the photosensitive gate 242 opens the driving channel 231a of the driving active portion 231, so that the photocurrent is transmitted from the first electrode 231d of the driving active portion 231 to the drain connection portion on the other side of the driving channel 231a, and is transmitted to the corresponding reading module to read the electrical signal.

[0079] In this embodiment, since the material of the photosensitive portion 320 is amorphous silicon, the thickness of the photosensitive portion 320 is positively correlated with the total amount of light that the photosensitive portion 320 can absorb; that is, when the incident light is irradiated on the photosensitive portion 320, the greater the thickness of the photosensitive portion 320, the higher the upper limit of the total amount of light that the photosensitive portion 320 can absorb. Therefore, when the size permits, the thickness of the photosensitive portion 320 is increased as much as possible to avoid errors in the measurement results of the photosensitive diode due to the incident light reaching the absorption upper limit of the photosensitive portion 320; for example, in this embodiment, the thickness of the photosensitive portion 320 can completely fill the first opening 330.

[0080] In the display panel 100 of the present application, the acute angle formed between the sidewall of the first opening 330 and the substrate 10 ranges from 30° to 80°. When the acute angle formed between the sidewall of the first opening 330 and the substrate 10 is less than 30°, the area of ​​the first electrode 231d exposed by the first opening 330 is small within the limited size and area, resulting in a small contact area between the photosensitive portion 320 and the exposed first electrode 231d, which affects the transmission of photocurrent. When the acute angle formed between the sidewall of the first opening 330 and the substrate 10 is greater than 80°, the inclination angle of the sidewall of the first opening 330 is too large, and there is a risk of film discontinuity during film deposition on the photosensitive portion 320.

[0081] The fingerprint recognition sensor mainly collects light data, converts the collected light data into an electrical signal, and reads the electrical signal to obtain the user's fingerprint information. However, the light received by the photosensitive portion 320 includes not only light reflected from the user's finger, but also stray light incident from the outside world. Therefore, in order to ensure the accuracy of light data collection, this application also requires the provision of a light shielding layer 210 on one side of the photosensitive device 300.

[0082] In the display panel 100 of the present application, referring to Figures 1 and 2, the light-shielding layer 210 may include a first light-shielding portion 211 arranged between the driving active portion 231 and the base substrate 10, and the positive projections of the photosensitive portion 320 and the driving channel 231a on the first light-shielding portion 211 are located within the first light-shielding portion 211.

[0083] In this embodiment, the first light shielding portion 211 completely covers the photosensitive portion 320, preventing light from entering the interior of the display panel 100 from the side of the base substrate 10, ensuring that the light collected by the photosensitive portion 320 is mainly light reflected by the user's finger, thereby ensuring the accuracy of light data collection.

[0084] In the display panel 100 of the present application, referring to Figures 1 and 2, the light-shielding layer 210 also includes a second light-shielding portion 212 arranged between the base substrate 10 and the first active portion 232. The orthographic projection of the first active portion 232 on the second light-shielding portion 212 is located within the second light-shielding portion 212. The second light-shielding portion 212 is used to shield the first active portion 232 in the first sub-pixel 200a.

[0085] In this embodiment, since the material of the first active portion 232 is low-temperature polysilicon, when light enters the first channel 232a, the device effect of the first active portion 232 will be affected to a certain extent. The setting of the second light-shielding portion 212 can prevent light incident from the base substrate 10 into the interior of the display panel 100 from entering the first channel 232a.

[0086] In this embodiment, the first light shielding portion 211 and the second light shielding portion 212 are disposed on the surface of the same insulating film layer, that is, the first light shielding portion 211 and the second light shielding portion 212 can be disposed on the surface of the second barrier layer 104. At the same time, the light shielding layer 210 can further include a third light shielding portion 213 and a fourth light shielding portion. The first light shielding portion 211, the second light shielding portion 212, the third light shielding portion 213, and the fourth light shielding portion 214 can be disposed at intervals. The third light shielding portion 213 can be used to shield the active portion of the second sub-pixel 200b, and the fourth light shielding portion 214 can be used to shield the active portion of the third sub-pixel 200c.

[0087] In this embodiment, the first light shielding portion 211, the second light shielding portion 212, the third light shielding portion 213 and the fourth light shielding portion 214 can be arranged continuously, and the first light shielding portion 211, the second light shielding portion 212, the third light shielding portion 213 and the fourth light shielding portion 214 can be connected to each other to form a whole light shielding portion to block the active portion of the first sub-pixel 200a, the second sub-pixel 200b, the third sub-pixel 200c and the photosensitive device 300 to prevent the low-temperature polysilicon and metal oxide in the first sub-pixel 200a, the second sub-pixel 200b, the third sub-pixel 200c and the photosensitive device 300 from being affected by light.

[0088] Please refer to Figures 1 and 2. In order to improve the device effect of the first active portion 232, the second light-shielding portion 212 can be electrically connected to the source or drain in the first sub-pixel 200a, so that a voltage that turns on the first active portion 232 is formed on the second light-shielding portion 212, and a driving electric field is formed on the first gate 241 and the second light-shielding portion 212, thereby increasing the movement speed of carriers in the first channel 232a, improving the opening rate of the first channel 232a, and thereby reducing the response time of the first active portion 232.

[0089] In this embodiment, since the second light shielding portion 212 is electrically connected to the source or drain, if the second light shielding portion 212 is electrically connected to the first light shielding portion 211, there will be voltage in the light shielding portion below the photosensitive device 300, affecting the activation of the active portion 231. Therefore, the second light shielding portion 212 of the present application needs to be separated from the first light shielding portion 211, the third light shielding portion 213 and the fourth light shielding portion 214.

[0090] In the display panel 100 of the present application, since the second active portion 262 is made of metal oxide, and when light enters the second channel 262a, the device effect of the second active portion 262 will be affected to a certain extent, the present application can make the orthographic projection of the second active portion 262 on the second light-shielding portion 212 located within the second light-shielding portion 212, such as the structures of Figures 1 and 2; or, the orthographic projection of the second active portion 262 on the first light-shielding portion 211 is located within the first light-shielding portion 211, such as the structure of Figure 3. The arrangement of the second light-shielding portion 212 in Figures 1 and 2 and the first light-shielding portion 211 in Figure 3 can block the second channel 262a of the second active portion 262, thereby preventing light incident from the base substrate 10 into the interior of the display panel 100 from entering the second channel 262a.

[0091] In the display panel 100 of the present application, referring to Figures 1 and 2 , the length of the driving channel 231a can be smaller than the length of the first channel 232a. Since the channel length in the active portion is inversely correlated with the response rate of the active portion, and the channel width in the active portion is positively correlated with the response rate of the active portion, in order to improve the response rate of the photodiode, the length of the driving channel 231a in the photosensitive device 300 is reduced, so that the length of the driving channel 231a is smaller than the length of the first channel 232a, thereby increasing the turn-on rate of the driving channel 231a and reducing the response time of the driving active portion 231.

[0092] In this embodiment, external light can enter the interior of the display panel 100 from the light-emitting side of the display panel 100. Part of the incident light can be absorbed by the photosensitive device 300, affecting the measurement accuracy of the photosensitive device 300. Therefore, the present application can use a black light-shielding material to prepare the pixel definition layer 40, that is, except for the pixel opening 410 on the pixel definition layer 40, all other positions are filled with black light-shielding material; however, although this design can prevent external incident light from entering the photosensitive device 300, it also blocks light reflected by the user's finger, making it impossible for the photosensitive device 300 to obtain valid light data.

[0093] Referring to Figures 1 to 3 , the display panel 100 further includes a pixel definition layer 40 disposed on the array layer 20. The pixel definition layer 40 has a second opening 420 formed therein, corresponding to the photosensitive portion 320. The second opening 420 allows light reflected from the user's finger to enter the photosensitive device 300, allowing the photosensitive portion 320 to receive the light data and obtain information about the user's fingerprint.

[0094] In this embodiment, the second opening 420 is filled with an insulating material, and the orthographic projection of the insulating material in the second opening 420 on the photosensitive portion 320 is located within the photosensitive portion 320. Since an encapsulation layer 50 is formed on the pixel definition layer 40, the organic material and inorganic material in the encapsulation layer 50 are filled into the second opening 420 to fill the second opening 420. At the same time, to ensure the measurement accuracy of the photosensitive device 300, in this embodiment, the projected area of ​​the photosensitive portion 320 on the base substrate 10 is larger than the projected area of ​​the second opening 420 on the base substrate 10. In other words, the area of ​​the photosensitive portion 320 is increased as much as possible so that the photosensitive portion 320 can receive as much light as possible incident on the photosensitive portion 320 from the second opening 420.

[0095] In this embodiment, similar to the structure of the pixel definition layer 40, the black matrix 710 layer has multiple openings corresponding to the pixel driver 200, and multiple color resist units 721 of different colors are disposed within the corresponding openings. Therefore, while the design of the color filter layer 70 prevents external incident light from entering the photosensitive device 300, it also blocks light reflected by the user's finger, preventing the photosensitive device 300 from acquiring valid light data.

[0096] Referring to Figures 1 to 3 , the black matrix 710 of the color filter layer 70 further defines a third opening 711 corresponding to the second opening 420. The center of the third opening 711 and the center of the second opening 420 may lie on the same line perpendicular to the display panel 100. The second opening 420 and the third opening 711 may form a collimated light path, through which light reflected from the user's finger can enter the photosensitive device 300, allowing the photosensitive portion 320 to receive the light data and obtain information about the user's fingerprint.

[0097] In this embodiment, the circumscribed circle diameter of the third opening 711 can be smaller than the circumscribed circle diameter of the second opening 420. The reduction in the circumscribed circle diameter of the third opening 711 can reduce the amount of external interference light entering the photosensitive device 300, while the increase in the circumscribed circle diameter of the second opening 420 can ensure that as much incident light as possible passing through the third opening 711 is incident on the photosensitive portion 320.

[0098] In this embodiment, the circumscribed diameter of the third opening 711 may be 2 μm to 20 μm, for example, 4 μm to 10 μm. The circumscribed diameter of the second opening 420 is larger than that of the third opening 711 .

[0099] In the display panel 100 of the present application, referring to Figures 1 and 3, a plurality of fourth openings 712 corresponding to the pixel driving unit 200 are further provided on the black matrix 710 layer, and the plurality of fourth openings 712 are filled with color resist units 721, and one fourth opening 712 corresponds to one pixel opening 410; for example, the three fourth openings 712 in this embodiment are respectively filled with red color resist, green color resist and blue color resist.

[0100] In this embodiment, the circumscribed circle diameter of the fourth opening 712 is larger than the circumscribed circle diameter of the third opening 711. Since the fourth opening 712 is filled with the color resist unit 721, and the third opening 711 is a channel for the collimated light path, if the circumscribed circle diameter of the third opening 711 is too large, the third opening 711 cannot form a collimated light path with the second opening 420.

[0101] In the display panel 100 of the present application, the third opening 711 is filled with a color resist unit 721, which is a blue color resist or a green color resist. The blue color resist or the green color resist is mainly used to filter the red light reflected by the user's finger.

[0102] In the display panel 100 of the present application, referring to Figures 1 and 3, the touch metal layer may include a plurality of first touch electrodes, a plurality of second touch electrodes, and a bridge member formed by a first touch metal layer and a second touch metal layer. The first touch electrodes, the second touch electrodes, and the bridge member are formed by a metal grid. The first touch electrode is insulated from the second touch electrode by a break in the metal grid. The metal grid is formed by a plurality of first wires 610 and a plurality of second wires 620. The plurality of first wires 610 and the plurality of second wires 620 intersect to form a plurality of meshes corresponding to at least one sub-pixel.

[0103] In this embodiment, orthographic projections of the plurality of first conductive lines 610 and the plurality of second conductive lines 620 on the color filter layer 70 are located within the black matrix 710 .

[0104] In this embodiment, the display panel 100 further includes a cover plate 80 disposed on the color filter layer 70 .

[0105] Referring to FIG. 5 , the present application further proposes a method for manufacturing a display panel 100 . The display panel 100 includes a light-emitting area 201 and a non-light-emitting area 301 . The method for manufacturing the display panel 100 includes:

[0106] S10, providing a base substrate 10, and sequentially forming a light shielding layer 210, a buffer layer 221, a first semiconductor layer 230, a first gate insulating layer 222, a first gate layer 240, a second gate insulating layer 223, a second gate layer 250, and a first interlayer insulating layer 224 on the base substrate 10, wherein the first semiconductor layer 230 includes a driving active portion 231 located in the non-luminescent region 301, the driving active portion 231 including a driving channel 231a and a first electrode 231d disposed on one side of the driving channel 231a, wherein the material of the first electrode 231d includes one of conductive low-temperature polysilicon or metal oxide;

[0107] 6 a , the base substrate 10 may include a first flexible substrate 101, a first barrier layer 102, a second flexible substrate 103, and a second barrier layer 104 that are stacked. The first flexible substrate 101 and the second flexible substrate 103 may be formed of the same material, such as polyimide, and the first barrier layer 102 and the second barrier layer 104 may be formed of an inorganic material, such as at least one of SiOx and SiNx.

[0108] 6 a , the light shielding layer 210 is disposed on the second blocking layer 104 . The light shielding layer 210 includes a first light shielding portion 211 located in the non-luminous region 301 and a second light shielding portion 212 , a third light shielding portion 213 and a fourth light shielding portion 214 located in the pixel driving portion 200 .

[0109] Please refer to Figure 6a. The material of the first semiconductor layer 230 can be LTPS. The first semiconductor layer 230 can include a driving active portion 231 located in the non-luminous area 301 and a first active portion 232, a fifth active portion and a sixth active portion located in the luminous area 201. The first active portion 232, the fifth active portion and the sixth active portion correspond to the second light-shielding portion 212, the third light-shielding portion 213 and the fourth light-shielding portion 214, respectively.

[0110] In this embodiment, the first semiconductor layer 230 can use the first gate layer 240 or the second gate layer 250 as a shielding layer, and the active material on both sides of the channel region is heavily doped with boron ions or phosphorus ions to convert it into P + or N + polysilicon to make the first conductor portion 232b and the first electrode 231d conductive.

[0111] S20, forming a first opening 330 in the non-luminescent region 301 and a photosensitive portion 320 in the first opening 330, so that the photosensitive portion 320 is connected to the first electrode 231d. The first opening 330 penetrates a portion of the first gate insulating layer 222 and all of the second gate insulating layer 223 and the first interlayer insulating layer 224, so as to expose a portion of the first electrode 231d.

[0112] Please refer to Figure 6b. The material of the photosensitive part 320 can be a-Si. The first electrode 231d, the photosensitive part 320 and the second electrode 261a constitute the photosensitive diode of the present application. When the incident light is irradiated on the photosensitive diode, the photosensitive part 320 absorbs the incident light and converts it into photocurrent; secondly, the photosensitive gate 242 opens the driving channel 231a of the driving active part 231, so that the photocurrent is transmitted from the first electrode 231d of the driving active part 231 to the conductor part on the other side of the driving channel 231a, and is transmitted to the corresponding reading module to read the electrical signal.

[0113] In this embodiment, the acute angle between the sidewall of the first opening 330 and the base substrate 10 ranges from 30° to 80°.

[0114] S30, forming a second semiconductor layer 260 on the first interlayer insulating layer 224, wherein the second semiconductor layer 260 includes a second electrode 261a located in the non-luminescent region 301, the second electrode 261a being connected to the photosensitive portion 320, and the material of the second electrode 261a including conductive low-temperature polysilicon or metal oxide;

[0115] 6 c , the second semiconductor layer 260 can utilize the subsequent third gate as a shielding layer, and processes such as heavy boron ion doping, plasma bombardment, and annealing are used on the active material that needs to be conductive to make the second conductive portion 262 b and the second electrode 261 a conductive.

[0116] S40 , forming a third gate insulating layer 225 , a third gate layer 270 , and a second interlayer insulating layer 226 in sequence on the second semiconductor layer 260 ;

[0117] S50 , forming a first source-drain electrode layer 280 , a first planarization layer 227 , a second source-drain electrode layer 290 , a second planarization layer 228 and an anode layer 310 in sequence on the second interlayer insulating layer 226 ;

[0118] S60 , forming a pixel definition layer 40 , a light-emitting layer, and a cathode layer on the second planar layer 228 , with a plurality of pixel openings 410 located in the light-emitting region 201 and a plurality of second openings 420 located in the non-light-emitting region 301 being formed on the pixel definition layer 40 , and the light-emitting layer being disposed within the plurality of pixel openings 410 ;

[0119] Please refer to Figure 6d. In the present application, the pixel definition layer 40 can be prepared using black light-shielding material, that is, except for the pixel opening 410 on the pixel definition layer 40, other positions are filled with black light-shielding material; at the same time, the setting of the second opening 420 can allow the light reflected by the user's finger to enter the photosensitive device 300, so that the photosensitive part 320 can receive the light data and obtain the user's fingerprint information.

[0120] In this embodiment, the projection area of ​​the photosensitive portion 320 on the base substrate 10 is larger than the projection area of ​​the second opening 420 on the base substrate 10, that is, the area of ​​the photosensitive portion 320 is increased as much as possible so that the photosensitive portion 320 can receive as much light as possible incident from the second opening 420 to the photosensitive portion 320.

[0121] S70, forming a thin film encapsulation layer 50 and a touch layer 60 on the cathode layer;

[0122] S80, a color filter layer 70 including a black matrix 710 and a color resist layer is formed on the touch layer 60, a plurality of third openings 711 and a plurality of fourth openings 712 are formed on the black matrix 710, the color resist layer includes a plurality of color resist units 721, and the plurality of color resist units 721 are arranged in the plurality of third openings 711 and the plurality of fourth openings 712, and the color resist units 721 in the third openings 711 are blue color resist or green color resist.

[0123] Referring to Figure 6e, the center point of the third opening 711 and the center point of the second opening 420 can be located on the same straight line perpendicular to the display panel 100. The second opening 420 and the third opening 711 can form a collimated light path, and light reflected by the user's finger can enter the photosensitive device 300 through the collimated light path, allowing the photosensitive portion 320 to receive the light data and obtain the user's fingerprint information.

[0124] In this embodiment, the circumscribed circle diameter of the third opening 711 can be smaller than the circumscribed circle diameter of the second opening 420. The reduction in the circumscribed circle diameter of the third opening 711 can reduce the amount of external interference light entering the photosensitive device 300, while the increase in the circumscribed circle diameter of the second opening 420 can ensure that as much incident light as possible passing through the third opening 711 is incident on the photosensitive portion 320.

[0125] In this embodiment, the circumscribed diameter of the third opening 711 may be 2 μm to 20 μm, for example, 4 μm to 10 μm. The circumscribed diameter of the second opening 420 is larger than that of the third opening 711 .

[0126] In this embodiment, the third opening 711 is filled with a color resist unit 721, which is a blue color resist or a green color resist. The blue color resist or the green color resist is mainly used to filter the red light reflected by the user's finger.

[0127] In this embodiment, the display panel 100 further includes a cover plate 80 disposed on the color filter layer 70 .

[0128] This application also proposes a display device comprising a terminal body and the aforementioned display panel, the terminal body and display panel being integrated into one body. The terminal body may be a device such as a circuit board bound to the display panel. The display device may include electronic devices such as mobile phones, televisions, and laptop computers.

[0129] In the above embodiments, the description of each embodiment has its own focus. For parts that are not described in detail in a certain embodiment, reference can be made to the relevant descriptions of other embodiments.

[0130] The above is a detailed introduction to a display panel and a display terminal provided in the embodiments of the present application. Specific examples are used herein to illustrate the principles and implementation methods of the present application. The description of the above embodiments is only used to help understand the technical solutions and core ideas of the present application. Ordinary technicians in this field should understand that they can still modify the technical solutions recorded in the aforementioned embodiments, or make equivalent replacements for some of the technical features therein. These modifications or replacements do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of the present application.

Claims

1. A display panel, wherein: The display panel includes a light-emitting area and a non-light-emitting area arranged between the light-emitting areas, and the display panel further includes: substrate substrate; A first semiconductor layer is disposed on one side of the base substrate, the first semiconductor layer comprising: a first active portion disposed corresponding to the light-emitting area and a first electrode corresponding to the non-light-emitting area, the first active portion comprising a first semiconductor material, and the first electrode comprising a conductive first semiconductor material; an insulating isolation layer, arranged on a side of the first semiconductor layer away from the base substrate, the insulating isolation layer comprising: a first opening arranged in the non-light-emitting area and corresponding to the first electrode, the first opening exposing a surface of the first electrode away from the base substrate; A photosensitive layer, arranged on a side of the insulating isolation layer away from the base substrate, the photosensitive layer comprising a photosensitive portion arranged corresponding to the first opening; A second semiconductor layer is arranged on a side of the insulating isolation layer and the photosensitive layer away from the base substrate, the second semiconductor layer comprises: a second active portion arranged corresponding to the light emitting area and a second electrode arranged corresponding to the first opening, the second active portion comprises a second semiconductor material, the second electrode comprises a conductive second semiconductor material, and the photosensitive portion is arranged between the first electrode and the second electrode; The light emitting layer is arranged on a side of the second semiconductor layer away from the base substrate, and the light emitting layer comprises: a light emitting unit arranged corresponding to the light emitting area.

2. The display panel according to claim 1, wherein: The display panel further includes a light-sensitive driving transistor disposed in the non-luminescent area; Among them, the first semiconductor layer also includes a driving active part of the photosensitive driving transistor, and the driving active part includes a driving channel and a source connection part and a drain connection part arranged on both sides of the driving channel, the drain connection part is electrically connected to the drain of the photosensitive driving transistor, and at least part of the source connection part is reused as the first electrode; or, the source connection part is electrically connected to the source of the photosensitive driving transistor, and at least part of the drain connection part is reused as the first electrode.

3. The display panel according to claim 2, wherein: The second electrode is a transparent electrode made of a transparent material.

4. The display panel according to claim 2, wherein: The photosensitive portion overlaps the side wall of the first opening, and the photosensitive portion is connected to the first electrode in the first opening.

5. The display panel according to claim 2, wherein: The acute angle between the sidewall of the first opening and the substrate is in a range of 30° to 80°.

6. The display panel according to claim 2, wherein: The display panel further comprises a pixel definition layer disposed on the second semiconductor layer, wherein the pixel definition layer is provided with a second opening corresponding to the photosensitive portion; The second opening is filled with an insulating material, and the orthographic projection of the insulating material in the second opening on the photosensitive layer is located in the photosensitive portion.

7. The display panel according to claim 6, wherein: A projection area of ​​the photosensitive portion on the base substrate is larger than a projection area of ​​the second opening on the base substrate.

8. The display panel according to claim 6, wherein: The display panel further comprises a color filter layer disposed on the pixel definition layer, and a third opening corresponding to the second opening is formed on the black matrix layer of the color filter layer; Wherein, the diameter of the circumscribed circle of the third opening is smaller than the diameter of the circumscribed circle of the second opening.

9. The display panel according to claim 8, wherein: The diameter of the circumscribed circle of the third opening is 2 micrometers to 20 micrometers.

10. The display panel according to claim 8, wherein: The black matrix layer is further provided with a plurality of fourth openings corresponding to the light-emitting units, and the plurality of fourth openings are filled with color resistance units; Wherein, the diameter of the circumscribed circle of the fourth opening is greater than the diameter of the circumscribed circle of the third opening.

11. The display panel according to claim 10, wherein: The third opening is filled with the color resistance unit, and the color resistance unit in the third opening is a blue color resistance or a green color resistance.

12. The display panel according to claim 8, wherein: The display panel further includes a touch metal layer disposed on the color filter layer, wherein the touch metal layer includes a plurality of first wires and a plurality of second wires constituting touch electrodes; The orthographic projections of the plurality of first conductive lines and the plurality of second conductive lines on the color filter layer are located within the black matrix.

13. The display panel according to claim 2, wherein: A first sub-pixel is provided in the light-emitting area, and the first sub-pixel includes a first pixel driving unit; wherein the first pixel driving unit includes: The first active portion includes a first channel and a first conductor portion disposed on both sides of the first channel; The second active portion includes a second channel and second conductor portions arranged at both sides of the second channel, and the first active portion and the second active portion are arranged non-overlappingly; The first active portion and the first electrode are arranged on the surface of the same insulating film layer, and the second active portion and at least a part of the second electrode are arranged on the surface of the same insulating film layer.

14. The display panel according to claim 13, wherein: A first light shielding portion located between the driving active portion and the base substrate is also provided in the non-luminescent area, and the orthographic projections of the photosensitive portion and the driving channel on the first light shielding portion are located in the first light shielding portion.

15. The display panel according to claim 14, wherein: The first sub-pixel further includes a second light shielding portion disposed between the base substrate and the first active portion, and an orthographic projection of the first active portion on the second light shielding portion is located within the second light shielding portion; The first light shielding portion and the second light shielding portion are arranged on the surface of the same insulating film layer, and the first light shielding portion and the second light shielding portion are arranged at intervals.

16. The display panel according to claim 15, wherein: An orthographic projection of the second active portion on the second light shielding portion is located within the second light shielding portion.

17. The display panel according to claim 15, wherein: An orthographic projection of the second active portion on the first light shielding portion is located within the first light shielding portion.

18. The display panel according to claim 13, wherein: The length of the first channel is greater than the length of the driving channel.

19. The display panel according to claim 1, wherein: The material of the first electrode includes one of conductive low-temperature polysilicon or metal oxide, and the material of the second electrode includes the other of conductive low-temperature polysilicon or metal oxide.

20. A display device, wherein: The display device includes a display panel, the display panel includes a light-emitting area and a non-light-emitting area arranged between the light-emitting areas, and the display panel further includes: substrate substrate; A first semiconductor layer is disposed on one side of the base substrate, the first semiconductor layer comprising: a first active portion disposed corresponding to the light-emitting area and a first electrode corresponding to the non-light-emitting area, the first active portion comprising a first semiconductor material, and the first electrode comprising a conductive first semiconductor material; an insulating isolation layer, arranged on a side of the first semiconductor layer away from the base substrate, the insulating isolation layer comprising: a first opening arranged in the non-light-emitting area and corresponding to the first electrode, the first opening exposing a surface of the first electrode away from the base substrate; A photosensitive layer, arranged on a side of the insulating isolation layer away from the base substrate, the photosensitive layer comprising a photosensitive portion arranged corresponding to the first opening; A second semiconductor layer is arranged on a side of the insulating isolation layer and the photosensitive layer away from the base substrate, the second semiconductor layer comprises: a second active portion arranged corresponding to the light emitting area and a second electrode arranged corresponding to the first opening, the second active portion comprises a second semiconductor material, the second electrode comprises a conductive second semiconductor material, and the photosensitive portion is arranged between the first electrode and the second electrode; The light emitting layer is arranged on a side of the second semiconductor layer away from the base substrate, and the light emitting layer comprises: a light emitting unit arranged corresponding to the light emitting area.

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