Lanthanum yttrium oxide component for semiconductor processing chamber

Abstract

In some embodiments, a component for use in a semiconductor processing chamber system that in some embodiments may use a plasma and where the component has a process facing surface is provided, where the component comprises a component body, wherein the process facing surface of the component comprises lanthanum yttrium oxide.

Description

LANTHANUM YTTRIUM OXIDE COMPONENT FOR SEMICONDUCTOR PROCESSING CHAMBERCROSS-REFERENCE TO RELATED APPLICATION

[0001] This application claims the benefit of priority of U.S. Application No. 63 / 519,739, filed August 15, 2023, which is incorporated herein by reference for all purposes.BACKGROUND

[0002] The background description provided here is for the purpose of generally presenting the context of the disclosure. The information described in this background section, as well as aspects of the description that may not otherwise qualify as prior art at the time of filing, are neither expressly nor impliedly admitted as prior art against the present disclosure.

[0003] The present disclosure generally relates to the manufacturing of semiconductor devices. More specifically, the disclosure relates to processing chamber components used in manufacturing semiconductor devices.

[0004] During semiconductor wafer processing, semiconductor processing chambers are used to process semiconductor devices. Some semiconductor processing chambers are subjected to plasmas. The plasmas may degrade the component. Coatings may be placed over process facing surfaces of components of semiconductor processing chambers to protect the surfaces.

[0005] Some of the coatings may be applied using a plasma spray. One type of coating that may be used is aluminum oxide or alumina (AI2O3). It has been found that alumina does not provide enough etch resistance. Another type of coating that might be used is yttrium oxide or yttria (Y2O3). It has been found that high purity yttria coatings are expensive to manufacture due to material cost and / or processing costs. Although yttria is more sputter resistant than alumina, yttria is more susceptible to spontaneous fluorination reaction or conversion process than alumina. This fluorine reaction or conversion process may be undesirable and lead to deleterious behavior. For example, fluorination of an yttrium containing coating may cause process drift and may also create particles.SUMMARY

[0006] To achieve the foregoing and in accordance with the purpose of the present disclosure, a component with a process facing surface for use in a semiconductor processing chamber system is provided, where the component comprises a component body, wherein the process facing surface of the component comprises lanthanum yttrium oxide.

[0007] In another manifestation, a method for forming a component for use in a semiconductor processing chamber system is provided, where the method comprises providing acomponent body and a process facing surface comprising lanthanum yttrium oxide.

[0008] These and other features of the present disclosure will be described in more detail below in the detailed description and in conjunction with the following figures.BRIEF DESCRIPTION OF THE DRAWINGS

[0009] The present disclosure is illustrated by way of example, and not by way of limitation, in the figures of the accompanying drawings and in which like reference numerals refer to similar elements and in which:

[0010] FIG. 1 is a high level flow chart of an embodiment.

[0011] FIGS. 2A-B are schematic views of a component processed according to some embodiments.

[0012] FIG. 3 is a schematic view of a semiconductor processing chamber that may be used in some embodiments.

[0013] In the drawings, like reference numerals are sometimes used to designate like structural elements. It should also be appreciated that the depictions in the figures are diagrammatic and not to scale.DETAILED DESCRIPTION

[0014] The present disclosure will now be described in detail with reference to a few preferred embodiments thereof as illustrated in the accompanying drawings. In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present disclosure. It will be apparent, however, to one skilled in the art, that the present disclosure may be practiced without some or all of these specific details. In other instances, well-known process steps and / or structures have not been described in detail in order to not unnecessarily obscure the present disclosure.

[0015] In the manufacturing of semiconductor devices, a semiconductor processing chamber may be used. The semiconductor processing chamber may have various components that are exposed to plasma during processing. Such components may be aluminum to provide electrical and thermal characteristics that are useful in maintaining the plasma. Aluminum also allows a reduction in weight and cost. Other components may have a dielectric body. Such components may be made of alumina. Ceramic alumina may be used for items such as dielectric inductive power windows or gas injectors.

[0016] Such components may be chemically etched by a fluorine containing plasma, oxygen containing plasma, or chlorine containing plasma. In addition, the components may be chemically converted or reacted, resulting in surface or bulk changes in process exposed areas ofthe component. The erosion from sputtering may change the shape of the component disrupting the uniformity of the process or may generate particles that become contaminants. A coating may be placed on a process facing surface of the aluminum to provide protection from erosion.

[0017] In some chambers, alumina is used as a protective coating. Alumina has some plasma etch resistance. More etch-resistant coatings would provide additional protection for such processing chamber components. Coatings such as yttria and yttrium aluminum oxide are also used as coatings in some semiconductor processing chambers. Yttria is more resistant to sputtering than alumina. However, such yttria coatings do not meet the particle requirements at next-generation nodes. Instead, when exposed to fluorine containing plasma, fluorine is absorbed into the yttria coating, so that the yttria coating is fluorinated converting yttria (Y2O3) into yttrium fluoride (YF3) or various forms of YxOyFzcompounds that may be stable or metastable. These compounds create lattice and crystal defects with various intrinsic property defects, resulting in particles that dislodge from the yttria coating and become contaminants. The particles make it more difficult to meet requirements for reduced contaminants. In addition, due to the preferred fluorine conversion reaction of yttria, as an example, some thermal spray yttria coatings may take an undesirably long period of time to reach a chemical steady state when exposed to a fluorine containing plasma environment.

[0018] Various embodiments provide a component with a process facing surface comprising lanthanum yttrium oxide (LaxYyOz, wherein x, y, and z are positive numbers). In some embodiments, the lanthanum yttrium oxide is a material that does not form a volatile halide and is resistant to surface damage from ion bombardment. In some embodiments, the lanthanum yttrium oxide is LaYO,. In some embodiments, the lanthanum yttrium oxide is LaxYi.xO3, wherein x is a number between 0.01 and 0.99 or x is a number between 0.1 and 0.9. In some embodiments, the lanthanum yttrium oxide is a pyrochlore (La2Y2O?). In some embodiments, a coating of L^YzO? may be provided by providing a powder or a raw material that is a pyrochlore or mixed metal oxide, and then turning the powder or raw material into a component or coating. As an example, one might use co-precipitation with calcination followed by ball milling to produce a pyrochlore powder that is then sintered. In some embodiments, La2Y2O? may be provided as part of a process of creating the component or coating. As an example, one might mix La2O3 and Y2O3 powders together and then reactively sinter them to create a component; or have an agglomerated particle of La2O3 and Y2O3 nanoparticles that is melted in a plasma plume for a coating. In some embodiments, the lanthanum yttrium oxide forms crystals of perovskite in a perovskite lattice arrangement. In some embodiments, thelanthanum yttrium oxide forms one or more crystals. In some embodiments, the lanthanum yttrium oxide forms a single crystal. In some embodiments, the lanthanum yttrium oxide forms a polycrystalline or multicrystalline material. In some embodiments, the polycrystalline or multicrystalline material may be polymorphic having different crystal structures. Since lanthanum yttrium oxide is polymorphic having different crystal structures, polycrystalline components made of lanthanum yttrium oxide can accommodate defects without falling apart. As a result, a polycrystalline lanthanum yttrium oxide component is more resistant to ion bombardment and chemical etching. In some embodiments, the lanthanum yttrium oxide may be an amorphous material with some lanthanum yttrium oxide crystals within the amorphous material where the lanthanum yttrium oxide crystal provides only a short range or medium range order.

[0019] To facilitate understanding, FIG. 1 is a high level flow chart of a process used in an embodiment. A component body is provided (step 104). FIG. 2A is a schematic cross- sectional view of part of a component body 204 of a component 200 that is used in an embodiment. In this example, the component 200 is a ceramic alumina dielectric inductive power window. The component body 204 has a surface 208. In this embodiment, the surface 208 is a process facing surface. A process facing surface of the component body 204 is a surface of the component body that will face toward a semiconductor process when the component body 204 is used in a semiconductor processing chamber. In this embodiment, a layer 210 is formed over the process facing surface of the component body. In some embodiments, one or more layers may be over the process facing surface 208. In other embodiments, there is no layer over the process facing surface of the component body 204.

[0020] Next, the surface 208 or the surface 208 and the layer 210 are coated by a lanthanum yttrium oxide coating 212. The lanthanum yttrium oxide coating 212 may be deposited by one or more of aerosol deposition (AD), atomic layer deposition (ALD), chemical vapor deposition (CVD), physical vapor deposition (PVD), and thermal spraying. In some embodiments, the thermal spraying may be at least one of a suspension plasma spraying, a vacuum plasma spray, a high velocity oxygen fuel spray, and an atmospheric plasma spraying. In some embodiments, a spray powder may be provided by forming a bulk lanthanum yttrium oxide and grinding the bulk lanthanum yttrium oxide into a powder. In some embodiments, the spray powder is formed by component powders of a lanthanum yttrium oxide. For example, a lanthanum yttrium oxide coating 212 is formed from a spray powder comprising lanthanum oxide powder mixed with yttrium oxide powder. In some embodiments, the lanthanum yttriumoxide coating 212 has a thickness in the range of 50 (nanometers) nm to 1500 pm (micrometers). In some embodiments, when the coating is applied using aerosol deposition (AD) or physical vapor deposition (PVD) the lanthanum yttrium oxide coating 212 has a thickness in the range of 50 nm to 50 microns. In some embodiments, when the coating is applied using thermal spraying the lanthanum yttrium oxide coating 212 has a thickness in the range of 50 microns to 500 microns. In some embodiments, the thickness of the lanthanum yttrium oxide coating 212 is dependent on the component body on which the lanthanum yttrium oxide coating 212 is applied. For example, a lanthanum yttrium oxide coating 212 on a power window may have a different thickness than a lanthanum yttrium oxide coating 212 on a liner depending on the exposure the lanthanum yttrium oxide coating 212 to a plasma and / or other reactive environment factors. The process facing surface of the lanthanum yttrium oxide coating 212 is the process facing surface of the component 200.

[0021] In some embodiments, the component body 204 comprises one or more of a ceramic or an electrically conductive metal. The electrically conductive metal may comprise one or more of aluminum or a refractory metal. In some embodiments, the refractory metal may comprise one or more of stainless steel, titanium, or nickel alloys. In some embodiments, the nickel alloy is at least 50% Ni by weight. In some embodiments, the component body 204 is a refractory metal if the process of depositing the coating causes the component body 204 to be heated to a temperature of at least 200° C for a period of at least 10 hours. In some embodiments, the component body 204 comprises aluminum. The aluminum component body may be of an aluminum alloy, such as aluminum 6061. Such an aluminum alloy is at least 95% pure aluminum by weight. In some embodiments, the process of depositing the coating causes the component body 204 to be heated to a temperature of no more than 180° C. In some embodiments, the layer 210 may be one or more layers of an anodization layer or other layers. In other embodiments, there is not any layer 210 and the lanthanum yttrium oxide coating 212 is directly on the surface 208. In some embodiments, the component body 204 comprises a ceramic dielectric material, such as alumina. In some embodiments, coatings may be produced using ceramic powders by a variety of methods known in the art. These methods include thermal spray (plasma, high velocity oxy-fuel, detonation gun, etc.), electron beam physical vapor deposition (EBPVD), laser cladding, and plasma transferred arc.

[0022] In some embodiments, the lanthanum yttrium oxide coating is patterned. In some embodiments, the patterning is provided by masking a surface of the component body 204 before applying the coating.

[0023] In some embodiments, the bulk component body 204 comprises a lanthanum yttrium oxide. In such embodiments, the layer 210 and lanthanum yttrium oxide coating 212 are not needed, since the process facing surface of the component body is a lanthanum yttrium oxide process facing surface. In some embodiments, the bulk component body 204 is formed by sintering. In some embodiments, the component body 204 is formed by spark plasma sintering. In some embodiments, the ceramic powder may be provided by forming a bulk lanthanum yttrium oxide and forming the bulk lanthanum yttrium oxide into a powder. In some embodiments, the ceramic powder is formed by component powders of a lanthanum yttrium oxide. For example, the ceramic powder may comprise lanthanum oxide powder mixed with yttrium oxide powder.

[0024] In some embodiments, the bulk component body 204 comprises a plurality of ceramic layers laminated together to form a ceramic laminate where at least one surface of the bulk component body is lanthanum yttrium oxide. In some embodiments, the ceramic laminate forming the bulk component body 204 may be formed by a sintering process, such as spark plasma sintering or hot isostatic pressing. In an example, a first ceramic powder may be placed in a mold. The first ceramic powder may fill more than 90% of the mold. A layer of a second ceramic powder is placed over the first ceramic powder in the mold. The second ceramic powder may fill less than 10% of the mold. The second ceramic power is a lanthanum yttrium oxide forming powder. In some embodiments, the second ceramic powder may be provided by forming a bulk lanthanum yttrium oxide and forming the bulk lanthanum yttrium oxide into a powder. In some embodiments, the second ceramic powder is formed by component powders of a lanthanum yttrium oxide. For example, the ceramic powder may comprise lanthanum oxide powder mixed with yttrium oxide powder. In some embodiments, the first ceramic powder does not form a lanthanum yttrium oxide. For example, the first ceramic powder may be aluminum oxide to form an aluminum oxide ceramic part. In some embodiments, the resulting component comprises a ceramic component body of the first ceramic powder and a protective lanthanum yttrium oxide layer on a surface of the ceramic component body. In some embodiments, a transition zone of a mixture of the first ceramic powder and the second ceramic powder is between the ceramic component body of the first ceramic powder and the lanthanum yttrium oxide layer. In some embodiments, the ceramic component body may further comprise additional ceramic and transition layers when additional layers of different ceramic powders are provided. The sintering of two different ceramic powders to form two different zones of different ceramic materials and optionally a transition zone between them is a co-sintering orlamination process. In some embodiments, separate coatings of lanthanum oxide and yttrium oxide may be applied and then laminated together to form a coating of lanthanum yttrium oxide. In some embodiments, the coating of lanthanum yttrium oxide encapsulates the first ceramic formed from the first ceramic powder. In some embodiments, the co-sintered lanthanum yttrium oxide outer layer is much thicker than a regular coating. In some embodiments, one or more intermediate layers are between a substrate and a lanthanum yttrium oxide outer coating. In some embodiments, the one or more intermediate layers may be provided for environmental (corrosion) and / or mechanical reasons. As an example, an aluminum substrate has an intermediate layer of a dense yttria with an outer layer of lanthanum yttrium oxide.

[0025] The component body 204 is mounted in a semiconductor processing chamber (step 108). In this example, the component body 204 is mounted in the semiconductor processing chamber as a dielectric inductive power window. The semiconductor processing chamber is used to process a plurality of substrates (step 112), where a plasma is created within the chamber to process the substrates, such as etching the substrates, and the lanthanum yttrium oxide surface is exposed to the process. Many substrates can be processed sequentially so that the lanthanum yttrium oxide coating 212 is exposed to hundreds or thousands of hours of etching plasmas, The lanthanum yttrium oxide provides increased etch resistance to protect the surface 208 of the component body 204 for the lifetime of the semiconductor processing chamber. In addition, the lanthanum yttrium oxide is resistant to fluorination, so that process drift is reduced.

[0026] FIG. 3 schematically illustrates an example of a semiconductor processing chamber system 300 that may be used in an embodiment. The semiconductor processing chamber system 300 includes a process reactor 302 having a semiconductor processing chamber 304 therein. A plasma power supply 306, tuned by a plasma matching network 308, supplies power to a transformer coupled plasma (TCP) coil 310 located near a dielectric inductive power window 312 to create a plasma 314 in the semiconductor processing chamber 304 by providing an inductively coupled power. A pinnacle 372 extends from a chamber wall 376 of the semiconductor processing chamber 304 to the dielectric inductive power window 312 forming a pinnacle ring. The pinnacle 372 is angled with respect to the chamber wall 376 and the dielectric inductive power window 312, such that the interior angle between the pinnacle 372 and the chamber wall 376 and the interior angle between the pinnacle 372 and the dielectric inductive power window 312 are each greater than 90° and less than 180°. The pinnacle 372 provides an angled ring near the top of the semiconductor processing chamber 304, as shown.The pinnacle 372 is more generically called a chamber liner. The TCP coil (upper power source) 310 may be configured to produce a uniform diffusion profile within the semiconductor processing chamber 304. For example, the TCP coil 310 may be configured to generate a toroidal power distribution in the plasma 314. The dielectric inductive power window 312 is provided to separate the TCP coil 310 from the semiconductor processing chamber 304 while allowing energy to pass from the TCP coil 310 to the semiconductor processing chamber 304. A wafer bias voltage power supply 316 tuned by a bias matching network 318 provides power to an electrode 320 to set the bias voltage on the substrate 366. The substrate 366 is supported by the electrode 320. The electrode 320 acts as a substrate support. A controller 324 controls the plasma power supply 306 and the wafer bias voltage power supply 316.

[0027] The plasma power supply 306 and the wafer bias voltage power supply 316 may be configured to operate at specific radio frequencies such as for example, 13.56 megahertz (MHz), 27 MHz, 2 MHz, 60 MHz, 400 kilohertz (kHz), 2.54 gigahertz (GHz), or combinations thereof. Plasma power supply 306 and wafer bias voltage power supply 316 may be appropriately sized to supply a range of powers in order to achieve the desired process performance. For example, in one embodiment, the plasma power supply 306 may supply the power in a range of 50 to 5000 Watts, and the wafer bias voltage power supply 316 may supply a bias voltage in a range of 20 to 2000 volts (V). In addition, the TCP coil 310 and / or the electrode 320 may be comprised of two or more sub-coils or sub-electrodes. The sub-coils or sub-electrodes may be powered by a single power supply or powered by multiple power supplies.

[0028] As shown in FIG. 3, the semiconductor processing chamber system 300 further includes a gas source / gas supply mechanism 330. The gas source 330 is in fluid connection with semiconductor processing chamber 304 through a gas inlet, such as a gas injector 340. The gas injector 340 may be located in any advantageous location in the semiconductor processing chamber 304 and may take any form for injecting gas. Preferably, however, the gas inlet may be configured to produce a “tunable” gas injection profile. The tunable gas injection profile allows independent adjustment of the respective flow of the gases to multiple zones in the semiconductor processing chamber 304. More preferably, the gas injector is mounted to the dielectric inductive power window 312. The gas injector may be mounted on, mounted in, or form part of the power window. The process gases and by-products are removed from the semiconductor processing chamber 304 via a pressure control valve 342 and a pump 344. The pressure control valve 342 and pump 344 also serve to maintain a particular pressure within thesemiconductor processing chamber 304. The pressure control valve 342 can maintain a pressure of less than 1 torr during processing. An edge ring 360 is placed around the substrate 366. The gas source / gas supply mechanism 330 is controlled by the controller 324. A Kiyo by Lam Research Corp, of Fremont, CA, may be used to practice an embodiment.

[0029] In various embodiments, the component may be other parts of a semiconductor processing chamber, such as confinement rings, edge rings, the electrostatic chuck, a gas injector, a shower head, ground rings, chamber liners, such as the pinnacle 372, door liners, dielectric windows, chamber walls, or other components. Other components of other types of semiconductor processing chambers may be used. For example, plasma exclusion rings on a bevel etch chamber may be coated in an embodiment. In another example, a showerhead of a dielectric processing chamber may be coated. In some embodiments, the chamber may have a dome shape, where the coating coats the dome. In some embodiments, one or more, but not all surfaces of a component body 204 are coated.

[0030] In some embodiments, after a coating is deposited, the coating is machined, ground, and / or polished. In an example, the component may have a surface with a complex shape. Because the surface has a complex shape, the thickness of the coating may be nonuniform. Machining, grinding, and / or polishing may be used to provide a more uniform thickness. The uniform thickness may improve process uniformity, control coating stresses to prevent mechanical coating failure, and ensure that the part is able to fit with adjacent components. In some embodiments, a coating with a thickness of about 1500 pm thick is deposited, and then machining and grinding reduce the thickness of the coating to a uniform thickness of less than 100 pm. In some embodiments, a coating with a thickness of about 500 pm thick is deposited, and then machining and grinding reduce the thickness of the coating to a uniform thickness of less than 1000 pm. Polishing using a very fine grit high-hardness abrasive either embedded in a polishing pad or in a slurry may be used to reduce the roughness of the coating so that the process facing surface of the chamber has a uniform roughness. In some embodiments, the roughness is less than 5 pm Ra. Such a roughness may be achieved by spraying or with basic machining and / or grinding. In some embodiments, the roughness is less than 1.5 pm Ra. In some embodiments, the roughness of between 0.5 pm and 1.5 pm Ra. In some embodiments, the roughness of between 0.005 pm and 0.5 pm Ra.

[0031] In an example of providing a transformer coupled plasma (TCP) window, such as the inductive power window 312, a lanthanum yttrium oxide coating may be provided. In someembodiments, the lanthanum yttrium oxide coating is applied using aerosol deposition to form a lanthanum yttrium oxide with a thickness in the range of 5 pm to 30 pm. In some embodiments, a compaction and / or cohesion phase is used to allow the coating on the inductive power window 312 to be densified providing a stronger coating with a lower porosity and fewer defects.

[0032] In an example of providing a coating on a dome shaped wall of a semiconductor processing chamber with a lanthanum yttrium oxide coating, thermal spraying, such as atmospheric plasma spraying, is used to deposit a coating. In some embodiments, the coating has a thickness in the range of 100 pm to 500 pm.

[0033] In an example of providing a lanthanum yttrium oxide coating on a showerhead, atomic layer deposition is used to provide the coating. In some embodiments, the coating is deposited within gas holes and / or other internal channels and / or other high aspect ratio components of the showerhead. Atomic layer deposition provides a conformal deposition that does not require a line of sight and is able to coat inside of the showerhead. In some embodiments, the coating has a thickness of 100 nm to 300 nm. In some embodiments, the coating has a pyrochlore crystal structure. In some embodiments, the coating has an amorphous structure. In some embodiments, the lanthanum yttrium oxide coating provides improved etch resistance and improved erosion resistance during cleaning.

[0034] In an example of providing a lanthanum yttrium oxide coating on a metal part, thermal spraying, such as atmospheric plasma spraying, is used to deposit a coating. In some embodiments, the coating has a thickness in the range of 100 pm to 500 pm.

[0035] While this disclosure has been described in terms of several preferred embodiments, there are alterations, permutations, modifications, and various substitute equivalents, which fall within the scope of this disclosure. It should also be noted that there are many alternative ways of implementing the methods and apparatuses of the present disclosure. It is therefore intended that the following appended claims be interpreted as including all such alterations, permutations, and various substitute equivalents as fall within the true spirit and scope of the present disclosure. As used herein, the phrase “A, B, or C” should be construed to mean a logical (“A OR B OR C”), using a non-exclusive logical “OR,” and should not be construed to mean ‘only one of A or B or C. Each step within a process may be an optional step and is not required. Different embodiments may have one or more steps removed or may provide steps in a different order. In addition, various embodiments may provide different steps simultaneously instead of sequentially.

Claims

CLAIMSWhat is claimed is:

1. A component with a process facing surface for use in a semiconductor processing chamber system, comprising a component body, wherein the process facing surface of the component comprises lanthanum yttrium oxide.

2. The component, as recited in claim 1, wherein the lanthanum yttrium oxide is at least one of a single crystal, multicrystalline, and amorphous.

3. The component, as recited in claim 1, wherein the component body comprises lanthanum yttrium oxide forming a bulk component body.

4. The component, as recited in claim 1, wherein the process facing surface comprises a coating on a surface of the component body.

5. The component, as recited in claim 4, wherein the component body comprises an electrically conductive metal.

6. The component, as recited in claim 5, wherein the electrically conductive metal comprises at least one of aluminum and a refractory metal.

7. The component, as recited in claim 4, wherein the component body comprises a ceramic.

8. The component, as recited in claim 4, wherein the coating has a thickness in a range of 50 nm to 1500 microns.

9. The component, as recited in claim 1 , wherein the component forms at least one of a gas injector, chamber liner, chamber wall, and dielectric window.

10. A method for forming a component for use in a semiconductor processing chamber system, the method comprising providing a component body and a process facing surface comprising lanthanum yttrium oxide.

11. The method, as recited in claim 10, wherein the providing the component body and the process facing surface comprises sintering of a ceramic powder.

12. The method, as recited in claim 10, wherein the providing the component body and the process facing surface comprises: providing a bulk component body; and forming a lanthanum yttrium oxide coating on a surface of the bulk component body.

13. The method, as recited in claim 12, wherein the forming the lanthanum yttrium oxide coating is by at least one of atomic layer deposition, aerosol deposition, thermal spraying, physical vapor deposition, co-sintering, and chemical vapor deposition.

14. The method, as recited in claim 12, further comprising machining the lanthanum yttrium oxide coating.

15. The method, as recited in claim 12, further comprising: mounting the component in a semiconductor processing chamber; and using the component in the semiconductor processing chamber to process a plurality of substrates within the semiconductor processing chamber, wherein the lanthanum yttrium oxide coating is exposed to a process for hundreds of hours.

16. The method, as recited in claim 10, wherein the lanthanum yttrium oxide is at least one of a single crystal, multicrystalline, and amorphous.

17. The method, as recited in claim 10, further comprising: mounting the component in a semiconductor processing chamber; and using the component in the semiconductor processing chamber to process a plurality of substrates within the semiconductor processing chamber, wherein the process facing surface is exposed to a process for hundreds of hours.

18. A product made by the method as recited in claim 10.

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