Substrate processing apparatus and substrate processing method using same

Abstract

A substrate processing apparatus according to an embodiment of the present invention includes: a processing chamber forming a processing space for substrate processing; a rotatable substrate support unit formed in a lower part of the processing space and on the upper surface of which a plurality of substrates are mounted; a shower head installed on the upper side of the processing chamber to face the substrate support unit and including a first gas-spraying unit for supplying a first process gas onto the substrate support unit and a second gas-spraying unit for supplying a second process gas onto the substrate support unit; a first exhaust unit including a first exhaust line positioned adjacent to the first gas-spraying unit to exhaust the first process gas, supplied to the processing space, to the outside of the processing space; and a second exhaust unit including a second exhaust line positioned adjacent to the second gas-spraying unit to exhaust the second process gas, supplied to the processing space, to the outside of the processing space.

Description

Substrate processing device and exhaust gas processing method using the same

[0001] The present invention relates to a device and method for treating a substrate, and more particularly, to a substrate treating device and an exhaust gas treating method using the same.

[0002] The recent increase in semiconductor device integration has led to a growing demand for ultra-thin films. As contact hole sizes decrease, the need for thin film deposition methods with superior step coverage is growing. Atomic layer deposition (ALD) is being adopted as a deposition method to overcome these various challenges. In particular, ALD enables control of film thickness down to the atomic or molecular layer level.

[0003] There are two main methods used in the atomic layer deposition (ALD) process: space-segmented and time-segmented. In the space-segmented ALD process, multiple substrates rotate while process gases are continuously injected. In the time-segmented ALD process, process gases are injected onto the substrate at different times.

[0004] In the space-division method atomic layer deposition process, the source gas exhaust line and the reaction gas exhaust line are formed independently, and the exhaust section is formed so that the gases do not meet and react with each other in the lower exhaust section.

[0005] At this time, a plasma pretreatment device and a trap for powder collection are configured in the source gas exhaust line, but a problem occurs in which source gas that is not converted to powder accumulates and ignites due to a decrease in the efficiency of the plasma pretreatment device. Specifically, a problem occurs in which powder that has not fully reacted comes into contact with moisture in the air in the exhaust terminal and reacts, generating flammable gas, and this flammable gas ignites.

[0006] In addition, powder may accumulate in the source gas exhaust line and a large amount of powder may fall to the booster pump at once due to vibration, etc., causing the pump to trip. Accordingly, if the source gas is exhausted through a reaction gas exhaust line that is not equipped with a plasma pretreatment device, environmental and safety issues may arise.

[0007] The present invention is intended to solve various problems including the above-mentioned problems, and provides a substrate processing device and an exhaust gas processing method using the same, which comprises a plasma pretreatment unit in each exhaust line formed for each region where process gas is supplied, and controls the operation of the plasma pretreatment unit according to the flow of source gas, thereby improving environmental safety issues caused by the source gas being released into the atmosphere. However, these tasks are exemplary and the scope of the present invention is not limited thereby.

[0008] According to one embodiment of the present invention for solving the above problem, a substrate processing device comprises: a process chamber forming a processing space for substrate processing; a substrate support formed at a lower portion of the processing space, a plurality of substrates being mounted on an upper surface thereof and being rotatable; a showerhead installed at an upper portion of the process chamber opposite the substrate support, the showerhead having a first gas injection unit for supplying a first processing gas onto the substrate support unit and a second gas injection unit for supplying a second processing gas onto the substrate support unit; a first exhaust unit provided with a first exhaust line positioned adjacent to the first gas injection unit so as to exhaust the first processing gas supplied to the processing space to the outside of the processing space; And a second exhaust unit having a second exhaust line positioned adjacent to the second gas injection unit so as to exhaust the second process gas supplied to the processing space to the outside of the processing space; wherein the first exhaust unit includes a first plasma pretreatment unit that forms a plasma atmosphere in a portion of the first exhaust line to convert exhaust gas exhausted through the first exhaust line into a powder form; and the second exhaust unit includes a second plasma pretreatment unit that forms a plasma atmosphere in a portion of the second exhaust line to convert exhaust gas exhausted through the second exhaust line into a powder form.

[0009] According to some embodiments of the present invention, the first exhaust unit may include: a first trap formed at a rear end of the first plasma pretreatment unit and capturing powder formed in the first plasma pretreatment unit; a second trap formed at a rear end of the first trap and capturing residual powder not captured by the first trap; and a first pump that sucks exhaust gas of the processing space from inside the processing space through the first exhaust line and exhausts it to outside the processing space.

[0010] According to some embodiments of the present invention, the second exhaust unit may include a third trap formed at a rear end of the second plasma pretreatment unit and capturing powder formed in the second plasma pretreatment unit; and a second pump that sucks exhaust gas of the processing space from inside the processing space through the second exhaust line and exhausts it to outside the processing space.

[0011] According to some embodiments of the present invention, the system may include a gas sensor positioned in the second exhaust line and detecting that the first process gas injected from the first gas injection unit flows into the second exhaust line.

[0012] According to some embodiments of the present invention, the present invention may include a control unit that controls the operation of the second plasma pretreatment unit depending on whether the first process gas is detected by the gas sensor.

[0013] According to some embodiments of the present invention, the control unit may control the second plasma pretreatment unit to not operate when the first process gas is not detected by the gas sensor, and to operate the second plasma pretreatment unit when the first process gas is detected by the gas sensor so as to convert the first process gas exhausted through the second exhaust line into a powder form.

[0014] According to an embodiment of the present invention for solving the above problem, an exhaust gas treatment method comprises: a process chamber forming a treatment space for substrate treatment; a substrate support formed at a lower portion of the treatment space, a plurality of substrates being placed on an upper surface and rotatable; a showerhead installed at an upper portion of the process chamber opposite the substrate support, and having a first gas injection unit for supplying a first process gas onto the substrate support unit and a second gas injection unit for supplying a second process gas onto the substrate support unit; a first plasma pretreatment unit for forming a plasma atmosphere in a portion of a first exhaust line positioned adjacent to the first gas injection unit so that the first process gas supplied to the treatment space can be exhausted to the outside of the treatment space, thereby converting the exhaust gas exhausted to the first exhaust line into a powder form; and a second exhaust line positioned adjacent to the second gas injection unit so that the second process gas supplied to the treatment space can be exhausted to the outside of the treatment space, thereby forming a plasma atmosphere in a portion of the second exhaust line. A method for treating exhaust gas using a substrate processing device including a second exhaust unit having a second plasma pre-treatment unit that converts exhaust gas exhausted through a second exhaust line into a powder form, the method comprising: (a) a step of exhausting the first process gas through the first exhaust unit; a step of exhausting the second process gas through the second exhaust unit; and the step (a) may include: (a-1) a step of operating the first plasma pre-treatment unit to convert the exhaust gas exhausted through the first exhaust line into a powder form.

[0015] According to some embodiments of the present invention, the step (a) may include: (a-2) a step of collecting powder formed in the first plasma pretreatment unit with a first trap formed at a rear end of the first plasma pretreatment unit; (a-3) a step of collecting residual powder not collected in the first trap with a second trap formed at a rear end of the first trap; and (a-4) a step of sucking exhaust gas inside the processing space using a first pump and exhausting the exhaust gas to the outside of the processing space.

[0016] According to some embodiments of the present invention, prior to step (b), the method may include a step (c) of detecting, through a gas sensor located in the second exhaust line, that the first process gas injected from the first gas injection unit flows into the second exhaust line.

[0017] According to some embodiments of the present invention, the step (b) may include the step of: (b-1) not operating the second plasma pretreatment unit when the first process gas is not detected by the gas sensor, and operating the second plasma pretreatment unit when the first process gas is detected by the gas sensor.

[0018] According to some embodiments of the present invention, the step (b) may include: (b-2) a step of capturing powder formed in the second plasma pretreatment unit with a third trap formed at a rear end of the second plasma pretreatment unit; and (b-3) a step of sucking exhaust gas inside the processing space using a second pump and exhausting the exhaust gas outside the processing space.

[0019] According to one embodiment of the present invention as described above, when source gas is exhausted through at least one exhaust line among a plurality of exhaust lines, a plasma pretreatment device capable of processing the source gas is provided in each exhaust line, and when source gas is exhausted through any one exhaust line among the plurality of exhaust lines, ignition that may occur after a pump is prevented, and when source gas is detected, the plasma pretreatment device is operated to control unnecessary electricity use, thereby reducing energy use, and a substrate processing device and an exhaust gas processing method using the same can be implemented. Of course, the scope of the present invention is not limited by these effects.

[0020] FIG. 1 is a schematic cross-sectional view showing a substrate processing device according to one embodiment of the present invention.

[0021] FIG. 2 is a top view showing a showerhead, a first exhaust section, and a second exhaust section of a substrate processing device according to one embodiment of the present invention.

[0022] Figures 3 to 6 are flowcharts showing an exhaust gas treatment method using a substrate treatment method according to one embodiment of the present invention.

[0023] Hereinafter, various preferred embodiments of the present invention will be described in detail with reference to the attached drawings.

[0024] The embodiments of the present invention are provided to more fully explain the present invention to those skilled in the art. The following embodiments may be modified in various ways, and the scope of the present invention is not limited to the following embodiments. Rather, these embodiments are provided to more faithfully and completely explain the present disclosure and to fully convey the spirit of the present invention to those skilled in the art. In addition, the thickness and size of each layer in the drawings are exaggerated for convenience and clarity of explanation.

[0025] Hereinafter, a substrate processing device according to an embodiment of the present invention can be used as a thin film deposition device for forming a thin film on substrates (S). For example, the substrate processing device can be used as a thin film deposition device using atomic layer deposition (ALD). In some embodiments, the substrate processing device can be used as a thin film deposition device requiring a high-temperature process.

[0026] FIG. 1 is a schematic cross-sectional view showing a substrate processing device according to one embodiment of the present invention, and FIG. 2 is a top view showing a showerhead, a first exhaust section, and a second exhaust section of the substrate processing device according to one embodiment of the present invention.

[0027] First, a substrate processing device according to one embodiment of the present invention may largely include a process chamber (100), a substrate support (200), a showerhead (300), a first exhaust (400), and a second exhaust (500).

[0028] As shown in Fig. 1, the process chamber (100) forms a processing space (A) for substrate processing.

[0029] As illustrated in FIG. 1, a process chamber (100) may be formed with a processing space (A) for forming a composite film on a plurality of substrates (S). For example, the process chamber (100) is configured to maintain airtightness, and may be connected to a vacuum pump through at least one exhaust port to discharge a process gas into the processing space (A) and control the vacuum level. A valve may be formed in at least a portion of the exhaust port to control the vacuum level within the process chamber (100), and the valve may be formed in the form of, for example, a throttle valve to control the amount of air passing through a throttle body to control the vacuum level.

[0030] The above exhaust section may include a first exhaust section (400) and a second exhaust section (500), which will be described in detail later.

[0031] The process chamber (100) may be provided in various shapes, and may include, for example, a process chamber body with an open top and a top lid covering the top of the process chamber body. A gate (not shown), which is a passage through which a plurality of substrates (S) can be loaded or unloaded into the processing space (A), may be formed on a side of the process chamber body.

[0032] As illustrated in FIG. 1, the substrate support (200) is formed to be rotatable at the bottom of the processing space (A) of the process chamber (100), and a plurality of substrates (S) can be radially mounted on the substrate support (200) along the rotational direction. For example, the substrate support (200) can be installed on the process chamber body to be rotatable about a rotational axis that coincides with the central axis of the process chamber (100).

[0033] For example, the substrate support (200) may be sealably coupled from the outside to the inside of the process chamber (100) and may include a shaft that receives rotational power and rotates, and an upper plate coupled to the shaft. A plurality of substrate mounting portions on which a plurality of substrates (S) may be mounted may be radially arranged on the upper plate. When the plurality of substrates (S) are wafers, the plurality of substrate mounting portions may be circular.

[0034] The substrate support (200) can be installed in the process chamber (100) so as to be able to be lifted and / or rotated.

[0035] As illustrated in FIG. 1, the showerhead (300) may be installed on the upper side of the process chamber (100) so as to face the substrate support (200). For example, the showerhead (300) may spray a process gas supplied from the outside of the process chamber (100) into the processing space (A). More specifically, the showerhead (300) is formed to spray the process gas onto a plurality of substrates (S) mounted on the substrate support (200), and may be installed on the upper side of the process chamber (100) so as to face the substrate support (200).

[0036] In some embodiments, the showerhead (300) may include at least one inlet hole formed at the upper or side for receiving a process gas from the outside, and a plurality of injection holes for spraying the process gas onto a plurality of substrates (S). For example, the showerhead (300) may include a spray plate having a gas diffusion space formed therein and injection holes at the bottom, or may be formed in the form of a nozzle.

[0037] The showerhead (300) may be formed with a first gas injection unit (310) that supplies a first process gas onto the substrate support unit (200) and a second gas injection unit (320) that supplies a second process gas onto the substrate support unit (200).

[0038] At this time, the first process gas may be a source gas containing a first organic compound and supplied onto a plurality of substrates (S) so that at least a portion of the source gas is adsorbed onto the plurality of substrates (S), and the second process gas may be a reactant gas containing no organic compound and supplied onto a plurality of substrates (S) to which the source gas is adsorbed so as to form a deposition film on the plurality of substrates (S).

[0039] As illustrated in FIG. 1, the showerhead (300) may be formed with a first gas injection unit (310) that injects a source gas for depositing a thin film on top of a plurality of substrates (S). For example, at least some of the plurality of gas injection units formed in the showerhead (300) may be formed as the first gas injection unit (310). That is, at least one substrate positioned below the first gas injection unit (310) among the plurality of substrates (S) may be supplied with the source gas.

[0040] The above source gas may be a flammable substance that generates a flammable gas that may spontaneously combust upon contact with water, and may be a gas containing, for example, a substance such as zirconium (Zr), hafnium (Hf), etc.

[0041] In addition, the showerhead (300) may be formed with a second gas injection unit (520) that injects a reaction gas for depositing a thin film on top of a plurality of substrates (S). For example, at least another unit among the plurality of gas injection units formed in the showerhead (300) may be formed as the second gas injection unit (320). That is, at least one substrate positioned below the second gas injection unit (320) among the plurality of substrates (S) may be supplied with a reaction gas.

[0042] Although not shown, the showerhead (300) may be formed with a purge gas injection unit for purging the reaction gas and source gas on top of a plurality of substrates (S). For example, the purge gas injection unit may be formed between the first gas injection unit (310) and the second gas injection unit (320) among the plurality of gas injection units formed in the showerhead (300), and the first gas injection unit (310), the second gas injection unit (320), and the purge gas injection unit may be arranged radially spaced apart from each other.

[0043] Although not shown, a substrate processing device according to some embodiments of the present invention may have a gas supply unit (900) formed outside the process chamber (100) for supplying a process gas sprayed through a showerhead (300). The gas supply unit (900) may be formed separately for supplying a source gas, a reaction gas, and a purge gas.

[0044] As illustrated in FIG. 1, the first exhaust unit (400) may be provided with a first exhaust line (410) positioned adjacent to the first gas injection unit (310) so as to exhaust the first process gas supplied to the processing space (A) outside the processing space (A).

[0045] Here, the fact that the first exhaust line (410) is positioned relatively adjacent to the first gas injection unit (310) means that the first exhaust line (410) is positioned relatively adjacent to the first gas injection unit (310) than the second gas injection unit (320).

[0046] For example, as illustrated in FIGS. 1 and 2, the first exhaust portion (400) may be formed below the substrate support portion (200) at a location where the first gas injection portion (310) is formed inside the process chamber (100). Thus, the first process gas injected from the first gas injection portion (310) may be exhausted to the outside of the process chamber (100) through the first exhaust portion (400).

[0047] The first exhaust unit (400) may include a first exhaust line (410), a first plasma pretreatment unit (420), a first trap (430), a second trap (440), and a first pump (450).

[0048] The first exhaust line (410) may be formed as a pipe connected from the inside of the process chamber (100) to the first pump (450) so that gas can flow through the internal passage.

[0049] A first throttle valve may be formed in at least a portion of the first exhaust line (410) to control the flow rate of gas flowing through the first exhaust line (410).

[0050] The first plasma pretreatment unit (420) can form a plasma atmosphere in a portion of the first exhaust line (410) to convert the exhaust gas exhausted through the first exhaust line (410) into a powder form.

[0051] The first plasma pretreatment unit (420) can convert the first process gas that is exhausted without reacting into a stable powder form through decomposition and replacement.

[0052] Specifically, only a portion of the source gas supplied from the processing space (A) within the process chamber (100) reacts with the reaction gas to form a film on the plurality of substrates (S), and the remaining source gas is discharged through the first exhaust line (410). At this time, the source gas discharged through the first exhaust line (410) can be made into a stable powder form through the first plasma pretreatment unit (420) because it may cause environmental safety problems if discharged into the atmosphere.

[0053] The first trap (430) is formed at the rear end of the first plasma pretreatment unit (420) and can capture powder formed in the first plasma pretreatment unit (420), and the second trap (440) is formed at the rear end of the first trap (430) and can capture residual powder not captured in the first trap (430).

[0054] The first pump (450) can suck in exhaust gas from the inside of the processing space (A) through the first exhaust line (410) and exhaust it to the outside of the processing space (A).

[0055] The first pump (450) is provided at the bottom of the process chamber (100) and can be used to form a vacuum in the process chamber (100) or as a passage for discharging process gases used in the processes.

[0056] That is, a first throttle valve is formed that is connected to the outside of the process chamber (100) through a first exhaust line (410) from inside the process chamber (100), and controls the flow rate of exhausted gas based on the process chamber (100), a first plasma pretreatment unit (420) that decomposes the first process gas is formed, a first trap (430) that collects powder and a second trap (440) that collects residual powder are formed, and a first pump (450) that sucks gas inside the processing space (A) through the first exhaust line (410) can be formed sequentially.

[0057] The second exhaust unit (500) may be provided with a second exhaust line (510) positioned adjacent to the second gas injection unit (320) so as to exhaust the second process gas supplied to the processing space (A) outside the processing space (A).

[0058] Here, the fact that the second exhaust line (510) is positioned relatively adjacent to the second gas injection unit (320) means that the second exhaust line (510) is positioned relatively adjacent to the second gas injection unit (320) than to the first gas injection unit (310).

[0059] For example, as illustrated in FIGS. 1 and 2, the second exhaust portion (500) may be formed below the substrate support portion (200) at a location where the second gas injection portion (320) is formed inside the process chamber (100). Thus, the reaction gas injected from the second gas injection portion (320) may be exhausted to the outside of the process chamber (100) through the second exhaust portion (500).

[0060] The second exhaust unit (500) may include a second exhaust line (510), a second plasma pretreatment unit (520), a third trap (530), and a second pump (550).

[0061] The second exhaust line (510) may be formed as a pipe connected from the inside of the process chamber (100) to the second pump (550) so that gas can flow through the internal passage.

[0062] A second throttle valve may be formed in at least a portion of the second exhaust line (510) to control the flow rate of gas flowing through the second exhaust line (510).

[0063] The opening / closing angle of the second throttle valve may vary depending on the opening / closing angle of the first throttle valve. Specifically, when the control unit (700) adjusts the rotation angle of the first throttle valve, the opening / closing rate of the second throttle valve may be adjusted according to a preset correction ratio.

[0064] For example, if the ratio of the angle of the first throttle valve and the opening / closing angle of the second throttle valve is set to 1:0.5, when the angle of the first throttle valve is opened by 40 degrees, the second throttle valve can operate by opening by 20 degrees. For example, when powder accumulates in the first throttle valve or the lower pipe, the first throttle valve opens more to maintain the vacuum pressure of the processing space (A) inside the process chamber (100), and the second throttle valve can also open more by the ratio according to the set opening / closing angle ratio.

[0065] Accordingly, the flow rate of the exhausted gas can be controlled by the opening and closing angles of the first throttle valve and the second throttle valve, and the balance of the processing space (A) can be maintained.

[0066] The second plasma pretreatment unit (520) can form a plasma atmosphere in a portion of the second exhaust line (510) to convert the exhaust gas exhausted through the second exhaust line (510) into a powder form.

[0067] The second plasma pretreatment unit (520) can convert the exhaust gas that is discharged without reacting into a stable powder form through decomposition and replacement.

[0068] Specifically, only a portion of the source gas supplied from the processing space (A) within the process chamber (100) reacts with the reaction gas to form a film on a plurality of substrates (S), and the remaining source gas is discharged through the first exhaust line (410).

[0069] At this time, if powder accumulates in the first exhaust line (410) to a certain extent, even if the first throttle valve is opened to the maximum, the flow rate of the exhausted source gas may not be processed, and since the second throttle valve of the second exhaust line (510) is opened more than before due to the compensation ratio, the source gas may penetrate into the second exhaust line (510).

[0070] The second plasma pretreatment unit (520) can convert the source gas that has penetrated into the second exhaust line (510) into a stable powder form.

[0071] The third trap (530) is formed at the rear end of the second plasma pretreatment unit (520) and can capture powder formed in the second plasma pretreatment unit (520).

[0072] The second pump (550) can suck in exhaust gas from the inside of the processing space (A) through the second exhaust line (510) and exhaust it to the outside of the processing space (A).

[0073] The second pump (550) is provided at the bottom of the process chamber (100) and can be used to form a vacuum in the process chamber (100) or as a passage for discharging process gases used in the processes.

[0074] That is, a second throttle valve that is connected to the outside of the process chamber (100) through a second exhaust line (510) from inside the process chamber (100), controls the flow rate of exhausted gas based on the process chamber (100), a second plasma pretreatment unit (520) that decomposes the infiltrated source gas is formed, a third trap (530) that collects powder is formed, and a second pump (550) that sucks gas inside the processing space (A) through the second exhaust line (510) can be formed sequentially.

[0075] A substrate processing device according to some embodiments of the present invention may include a gas sensor (600) and a control unit (700).

[0076] As illustrated in FIG. 1, the gas sensor (600) is located in the second exhaust line (510) and can detect that the first process gas injected from the first gas injection unit (310) flows into the second exhaust line (510).

[0077] As described above, when a certain amount of powder accumulates in the first exhaust line (410), the source gas may penetrate into the second exhaust line (510). At this time, the gas sensor (600) is a sensor that detects whether the source gas penetrates into the second exhaust line (510).

[0078] The gas sensor (600) may be a photoionization detector (PID Sensor) that detects organic compounds that constitute the source gas and the reaction gas. In the photoionization detector, when gas enters the sensor, energy of 10.6 eV is released through an extreme ultraviolet lamp (UV Lamp) to ionize the gas, and the ionized ions are collected by an electrode to detect a detection current proportional to the concentration of volatile organic compounds (VOC).

[0079] The control unit (700) can control the opening / closing angle and opening / closing rate of the first throttle valve formed in the first exhaust line (410) and the second throttle valve formed in the second exhaust line (510).

[0080] Additionally, as illustrated in FIG. 1, the control unit (700) can control the operations of the first plasma pretreatment unit (420) and the second plasma pretreatment unit (520).

[0081] Specifically, the control unit (700) can operate the first plasma pretreatment unit (420) so as to convert the first process gas exhausted through the first exhaust line (410) into powder. In addition, the control unit (700) can control the operation of the second plasma pretreatment unit (520) depending on whether the first process gas is detected by the gas sensor (600).

[0082] For example, the control unit (700) may stop the second plasma pretreatment unit (520) from operating when the first process gas is not detected by the gas sensor (600).

[0083] More specifically, when the second process gas flows through the second exhaust line (510) and the first process gas does not flow, the first process gas is not detected by the gas sensor (600), and at this time, the second plasma pretreatment unit (520) does not operate, and only the second process gas can flow through the second exhaust line (510).

[0084] On the other hand, when the first process gas flows together with the second process gas through the second exhaust line (510), the first process gas can be detected by the gas sensor (600), and at this time, the second plasma pretreatment unit (520) can be operated to control the first process gas exhausted through the second exhaust line (510) to be converted into a powder form.

[0085] Thus, even if the powder accumulates to a certain level in the first exhaust line (410) and the first process gas penetrates into the second exhaust line (510), it can be converted into powder through the second plasma pretreatment unit (520), and thus the first process gas can be prevented from being exhausted into the atmosphere through the second exhaust line (510).

[0086] In addition, the second plasma pretreatment unit (520) can be controlled to operate only when necessary, thereby preventing unnecessary costs and energy waste due to the second plasma pretreatment unit (520).

[0087] Figures 3 to 6 are flowcharts showing an exhaust gas treatment method using a substrate treatment method according to one embodiment of the present invention.

[0088] A substrate processing method according to one embodiment of the present invention comprises: a process chamber (100) forming a processing space (A) for substrate processing; a substrate support (200) formed at the lower portion of the processing space (A) and having a plurality of substrates (S) mounted on the upper surface and rotatable; a showerhead (300) installed on the upper portion of the processing chamber (100) facing the substrate support (200) and having a first gas injection unit (310) for supplying a first process gas onto the substrate support unit (200) and a second gas injection unit (320) for supplying a second process gas onto the substrate support unit (200); and a first exhaust line (410) positioned adjacent to the first gas injection unit (310) so as to exhaust the first process gas supplied to the processing space (A) to the outside of the processing space (A), thereby forming a plasma atmosphere in a portion of the first exhaust line (410) to convert the exhaust gas exhausted to the first exhaust line (410) into a powder form. This is an exhaust gas treatment method using a substrate treatment device including a first exhaust unit (400) equipped with a first plasma pretreatment unit (420) and a second exhaust unit (500) equipped with a second plasma pretreatment unit (520) that forms a plasma atmosphere in a part of a second exhaust line (510) located adjacent to a second gas injection unit (320) so that a second process gas supplied to a treatment space (A) can be exhausted outside the treatment space (A) and converts the exhaust gas exhausted through the second exhaust line (510) into a powder form.

[0089] Specifically, as illustrated in FIG. 1, the exhaust gas treatment method may include (a) a step of exhausting a first process gas to a first exhaust unit (400), and (b) a step of exhausting a second process gas to a second exhaust unit (500).

[0090] In the above step (a), a plurality of substrates (S) are placed on the substrate support (200), and a first process gas and a second process gas sprayed from a showerhead (300) can be supplied to the plurality of substrates (S). At this time, only a portion of the supplied first process gas reacts with the second process gas to form a film on the plurality of substrates (S), and the remaining first process gas can be discharged through the first exhaust line (410).

[0091] Specifically, the step (a) may include: (a-1) a step of operating a first plasma pretreatment unit (420), (a-2) a step of collecting powder with a first trap (430), (a-3) a step of collecting residual powder with a second trap (440), and (a-4) a step of exhausting exhaust gas with a first pump (450).

[0092] As shown in FIGS. 3 and 4, the step (a-1) is a step of converting the exhaust gas exhausted through the first exhaust line (410) into a powder form by operating the first plasma pretreatment unit (420).

[0093] As described above, in the step (a), only a portion of the first process gas supplied from the processing space (A) in the process chamber (100) reacts with the second process gas to form a film on the plurality of substrates (S), and the remaining first process gas is discharged through the first exhaust line (410).

[0094] Accordingly, in the step (a-1), since the first process gas discharged through the first exhaust line (410) may cause environmental safety problems if discharged into the atmosphere, the first process gas can be converted into a stable powder form through the first plasma pretreatment unit (420).

[0095] The first process gas may include a source gas adsorbed on a plurality of substrates (S), and the second process gas may include a reaction gas for forming a deposition film on the plurality of substrates (S) on which the first process gas is adsorbed.

[0096] The above step (a-2) is a step of capturing powder formed in the first plasma pretreatment unit (420) with the first trap (430) formed at the rear end of the first plasma pretreatment unit (420), and the above step (a-3) is a step of capturing residual powder not captured in the first trap (430) with the second trap (440) formed at the rear end of the first trap (430).

[0097] The above step (a-4) is a step of sucking exhaust gas inside the processing space (A) using the first pump (450) and exhausting it outside the processing space (A).

[0098] In the above step (a-4), a first pump (450) is provided at the bottom of the process chamber (100) to form a vacuum in the process chamber (100) or to discharge the process gas used in the processes.

[0099] A method for treating exhaust gas according to some embodiments of the present invention may include, as illustrated in FIG. 5, a step of detecting, prior to step (b), that the first process gas flows into the second exhaust line (510) (c).

[0100] Specifically, the step (c) is a step of detecting, through a gas sensor (600) located in the second exhaust line (510), that the first process gas injected from the first gas injection unit (310) flows into the second exhaust line (510). For example, if a certain amount of powder accumulates in the first exhaust line (410), the first process gas may penetrate into the second exhaust line (510). At this time, in the step (c), the gas sensor (600) may detect whether the first process gas penetrates into the second exhaust line (510).

[0101] For example, the step (c) above may be performed while the step (a) above is being performed. That is, while the step of exhausting the first process gas to the first exhaust unit (400) in the step (a) above is being performed, the step of detecting that the first process gas is flowing into the second exhaust line (510) in the step (c) above may be performed.

[0102] The above step (c) can be continuously performed while the above step (a) is being performed so that the first process gas can be continuously detected flowing into the second exhaust line (510), or the above step (c) can be repeatedly performed while the above step (a) is being performed so that the first process gas can be detected flowing into the second exhaust line (510) at predetermined time intervals.

[0103] In addition, the step (c) above can be continuously performed even while the step (b) above is being performed. Thus, when the first process gas is not detected in the second exhaust line (510) in the step (c), the operation of the second plasma pretreatment unit (520) can be stopped.

[0104] The above step (b) is a step of exhausting the second process gas to the second exhaust unit (500).

[0105] In the above step (b), a plurality of substrates (S) are placed on the substrate support (200), and the first process gas and the second process gas sprayed from the showerhead (300) can be supplied to the plurality of substrates (S). At this time, only a portion of the supplied second process gas reacts with the first process gas to form a film on the plurality of substrates (S), and the remaining second process gas can be discharged through the second exhaust line (510).

[0106] For example, the step (b) is a step of exhausting the second process gas to the second exhaust unit (500) when processing a plurality of substrates (S), and may be performed simultaneously while the step (a) is being performed, or may be performed after the step (a) is performed.

[0107] Specifically, the step (b) may include, as illustrated in FIG. 6, (b-1) a step of operating a second plasma pretreatment unit (520), (b-2) a step of capturing powder with a third trap (530), and (b-3) a step of exhausting exhaust gas with a second pump (550).

[0108] In the above step (b-1), if the first process gas is not detected by the gas sensor (600), the second plasma pretreatment unit (520) may be turned off.

[0109] As described above, in the step (b), only a portion of the second process gas supplied from the processing space (A) in the process chamber (100) reacts with the first process gas to form a film on the plurality of substrates (S), and the remaining second process gas is discharged through the second exhaust line (510).

[0110] At this time, if the first process gas is not included in the gas discharged through the second exhaust line (510), the second process gas can be discharged without operating the second plasma pretreatment unit (520).

[0111] Alternatively, in the step (b-1) above, if the first process gas is detected by the gas sensor (600), the second plasma pretreatment unit (520) can be operated.

[0112] Specifically, in the above step (a), the first process gas is exhausted to the first exhaust unit (400), but if a certain amount of powder accumulates in the first exhaust line (410), the flow rate of the exhausted first process gas may not be processed, and the first process gas of the second exhaust line (510) may infiltrate.

[0113] Thus, in the step (c), the first process gas is detected in the second exhaust line (510), and accordingly, the second plasma pretreatment unit (520) formed in the second exhaust line (510) in the step (b-1) can be operated.

[0114] That is, the above step (b-1) is a step of converting the first process gas into a stable powder form through the second plasma pretreatment unit (520) because the first process gas discharged through the second exhaust line (510) may cause environmental safety problems if discharged into the atmosphere.

[0115] The above step (b-2) is a step of capturing powder formed in the second plasma pretreatment unit (520) by the third trap (530) formed at the rear end of the second plasma pretreatment unit (520).

[0116] The above step (b-3) is a step of sucking exhaust gas inside the processing space (A) using the second pump (550) and exhausting it outside the processing space (A).

[0117] In the above step (b-3), a second pump (550) may be used to form a vacuum in the process chamber (100) or to discharge process gases used in the processes by being installed at the bottom of the process chamber (100).

[0118] According to the substrate processing device and exhaust gas processing method of the present invention, when the source gas is exhausted to the first exhaust line (410) and the second exhaust line (510), a first plasma pre-processing unit (420) and a second plasma pre-processing unit (520) capable of processing the source gas are provided in each exhaust line, and when the source gas is exhausted to the first exhaust line (410), ignition that may occur after the first pump (450) can be prevented.

[0119] In addition, when the source gas is detected in the second exhaust line (510), the second plasma pretreatment unit (520) is operated to process the source gas exhausted to the second pump (550) and prevent ignition, and the second plasma pretreatment unit (520) can be selectively operated to prevent unnecessary electricity use.

[0120] While the present invention has been described with reference to the embodiments illustrated in the drawings, these are merely exemplary, and those skilled in the art will appreciate that various modifications and equivalent alternative embodiments are possible. Therefore, the true scope of technical protection of the present invention should be determined by the technical spirit of the appended claims.

Claims

1. A process chamber forming a processing space for substrate processing; A substrate support formed at the bottom of the processing space and having a plurality of substrates mounted on the upper surface and capable of rotation; A showerhead installed on the upper side of the process chamber facing the substrate support, and having a first gas injection unit for supplying a first process gas onto the substrate support and a second gas injection unit for supplying a second process gas onto the substrate support; A first exhaust unit having a first exhaust line positioned adjacent to the first gas injection unit so as to exhaust the first process gas supplied to the processing space to the outside of the processing space; and A second exhaust unit having a second exhaust line positioned adjacent to the second gas injection unit so as to exhaust the second process gas supplied to the processing space outside the processing space; Including, The above first exhaust section, A first plasma pretreatment unit that forms a plasma atmosphere in a portion of the first exhaust line to convert exhaust gas exhausted through the first exhaust line into a powder form; Including, The above second exhaust section, A second plasma pretreatment unit that forms a plasma atmosphere in a portion of the second exhaust line to convert exhaust gas exhausted through the second exhaust line into a powder form; A substrate processing device including:

2. In paragraph 1, The above first exhaust section, A first trap formed at the rear end of the first plasma pretreatment unit and capturing powder formed in the first plasma pretreatment unit; A second trap formed at the rear end of the first trap and capturing residual powder not captured by the first trap; and A first pump that sucks exhaust gas from the processing space through the first exhaust line from inside the processing space and exhausts it to the outside of the processing space; A substrate processing device including:

3. In paragraph 1, The above second exhaust section, A third trap formed at the rear end of the second plasma pretreatment unit and capturing the powder formed in the second plasma pretreatment unit; and A second pump that sucks exhaust gas from the processing space through the second exhaust line from inside the processing space and exhausts it to the outside of the processing space; A substrate processing device including:

4. In paragraph 1, A gas sensor located in the second exhaust line and detecting that the first process gas injected from the first gas injection unit flows into the second exhaust line; A substrate processing device including:

5. In paragraph 4, A control unit that controls the operation of the second plasma pretreatment unit depending on whether the first process gas is detected by the gas sensor; A substrate processing device including:

6. In paragraph 5, The above control unit, If the first process gas is not detected by the gas sensor, the second plasma pretreatment unit is not operated, A substrate processing device that, when the first process gas is detected by the gas sensor, controls the second plasma pretreatment unit to operate so that the first process gas exhausted through the second exhaust line can be converted into a powder form.

7. A process chamber forming a processing space for substrate processing, a substrate support formed at the bottom of the processing space and having a plurality of substrates mounted on the upper surface and rotatable, a showerhead installed at the upper side of the process chamber opposite the substrate support and having a first gas injection unit for supplying a first process gas onto the substrate support unit and a second gas injection unit for supplying a second process gas onto the substrate support unit, a first exhaust unit having a first plasma pretreatment unit for forming a plasma atmosphere in a part of a first exhaust line located adjacent to the first gas injection unit so that the first process gas supplied to the processing space can be exhausted to the outside of the processing space, thereby converting the exhaust gas exhausted to the first exhaust line into a powder form, and a second exhaust line located adjacent to the second gas injection unit so that the second process gas supplied to the processing space can be exhausted to the outside of the processing space, thereby forming a plasma atmosphere in a part of the exhaust gas exhausted to the second exhaust line into a powder form. A method for treating exhaust gas using a substrate treatment device including a second exhaust section equipped with a second plasma pretreatment section for converting, (a) a step of exhausting the first process gas to the first exhaust section; (b) a step of exhausting the second process gas to the second exhaust section; Step (a) above, (a-1) A step of converting exhaust gas exhausted through the first exhaust line into a powder form by operating the first plasma pretreatment unit; A method for treating exhaust gas, comprising:

8. In paragraph 7, Step (a) above, (a-2) A step of capturing powder formed in the first plasma pretreatment unit with a first trap formed at the rear end of the first plasma pretreatment unit; (a-3) A step of capturing residual powder not captured by the first trap by a second trap formed at the rear end of the first trap; and (a-4) A step of sucking exhaust gas inside the processing space using the first pump and exhausting it outside the processing space; A method for treating exhaust gas, comprising:

9. In paragraph 7, Before step (b) above, (c) a step of detecting that the first process gas injected from the first gas injection unit flows into the second exhaust line through a gas sensor located in the second exhaust line; A method for treating exhaust gas, comprising:

10. In paragraph 9, Step (b) above, (b-1) a step of not operating the second plasma pretreatment unit when the first process gas is not detected by the gas sensor, and operating the second plasma pretreatment unit when the first process gas is detected by the gas sensor; A method for treating exhaust gas, comprising:

11. In paragraph 7, Step (b) above, (b-2) a step of capturing the powder formed in the second plasma pretreatment unit with a third trap formed at the rear end of the second plasma pretreatment unit; and (b-3) A step of sucking exhaust gas inside the processing space using a second pump and exhausting it outside the processing space; A method for treating exhaust gas, comprising:

Images