Light-emitting chip, display substrate, and display apparatus

Abstract

A light-emitting chip, the light-emitting chip comprising: a light-emitting unit, a color conversion unit, and a light-scrambling portion. The light-emitting unit comprises multiple sub-pixel light-emitting functional layers, a second semiconductor layer and a common electrode layer, a sub-pixel light-emitting functional layer comprising a first electrode, a first semiconductor layer, and a light-emitting layer. The second semiconductor layer is disposed at a light-emitting side of the multiple sub-pixel light-emitting functional layers, the second semiconductor layer comprising connecting portions and an auxiliary portion, the connecting portions being connected to the sub-pixel light-emitting functional layers, and the auxiliary portion enabling the connecting portions to connect to each other. The connecting portions and the auxiliary portion are of an integrated structure. The common electrode layer is connected to the auxiliary portion. The second semiconductor layer comprises a first surface facing the color conversion unit, a second surface facing away from the color conversion unit, and a side surface located between the first surface and the second surface. The light-scrambling portion is located at the periphery and / or the interior of the second semiconductor layer.

Description

Light-emitting chip, display substrate, and display device Technical Field

[0001] The present disclosure relates to the field of display technology, and in particular to a light-emitting chip, a display substrate, and a display device. Background Art

[0002] With the development of technology and the demand for display, light-emitting diodes (LEDs) are the trend of future display device development. They have advantages that liquid crystal displays and organic electroluminescent display panels cannot match, such as ultra-high contrast, ultra-high color gamut, high luminous efficiency, high brightness, and low energy consumption.

[0003] Among them, light-emitting diode (LED) + quantum dot (QD) display devices are very popular and can be used in mobile phones, monitors, TVs and outdoor displays.

[0004] Summary of the Invention

[0005] In one aspect, a light-emitting chip is provided, comprising: a light-emitting unit and a color conversion unit disposed on a light-emitting side of the light-emitting unit. The light-emitting unit comprises a plurality of light-emitting portions, each of which comprises a first electrode, a first semiconductor layer, and a light-emitting layer stacked along a first direction.

[0006] The light-emitting unit also includes a second semiconductor layer and a common electrode layer. The second semiconductor layer is arranged on the light-emitting side of the multiple light-emitting parts. The second semiconductor layer includes a connecting part and an auxiliary part. The connecting part is connected to the light-emitting part. At least part of the auxiliary part is located between adjacent connecting parts. The connecting part and the auxiliary part are an integral structure. The common electrode layer is connected to the auxiliary part.

[0007] The second semiconductor layer includes a first surface facing the color conversion unit, a second surface facing away from the color conversion unit, and a side surface located between and connecting the first and second surfaces. The light-emitting chip also includes a light-disturbance portion located around and / or within the second semiconductor layer. The first direction is the direction in which the light-emitting unit and the color conversion unit are stacked.

[0008] In some embodiments, the light-disturbing portion covers a side surface of the second semiconductor layer.

[0009] In some embodiments, the light-emitting portion further includes a first electrode electrically connected to the light-emitting layer, and disposed on a side of the light-emitting layer away from the color conversion unit.

[0010] In some embodiments, the material of the light-disturbing portion includes at least one of a metal material, a semiconductor material, and a black resin.

[0011] In some embodiments, the light-disturbing portion comprises a nanosphere material.

[0012] In some embodiments, the light-disturbing portion includes a conductive material; the light-emitting unit further includes: a first insulating layer arranged between the light-disturbing portion and the side of the second semiconductor layer; and / or a second insulating layer arranged on the side of the light-disturbing portion away from the second semiconductor layer.

[0013] In some embodiments, the thickness of the first insulating layer ranges from 0.2 μm to 0.5 μm; the thickness of the second insulating layer ranges from 0.2 μm to 0.5 μm.

[0014] In some embodiments, the light-emitting unit also includes a first common electrode layer, which is arranged on a side of the second semiconductor layer away from the color conversion unit; the first common electrode layer includes a first part belonging to the common electrode layer, and also includes a first reflective pattern spaced apart from the light-emitting portion; the light-emitting unit also includes a second reflective pattern, which is arranged in the area between the light-emitting portion and the common electrode layer and the area between the first reflective pattern and the light-emitting portion, and covers the side surfaces of the first reflective pattern, the light-emitting portion and the common electrode layer.

[0015] In some embodiments, the color conversion unit includes: a defining dam layer, the defining dam layer defines a plurality of opening areas, and in a first direction, one of the light-emitting portions corresponds to one of the opening areas; the light-disturbing portion is embedded in the second semiconductor layer, and in an orthographic projection onto a reference plane, the light-disturbing portion is arranged around the light-emitting layer and is located within the range of the defining dam layer; the reference plane is a plane where the surface of the color conversion unit away from the light-emitting unit is located.

[0016] In some embodiments, the light-disturbing portion is disposed close to a boundary of the opening area; or, the light-disturbing portion is disposed close to a center line of the defining dam layer between two adjacent opening areas.

[0017] In some embodiments, the light-disturbing portion penetrates the second semiconductor layer along a direction perpendicular to the reference plane.

[0018] In some embodiments, the light-emitting unit also includes a first common electrode layer, the first common electrode layer includes a first portion belonging to the common electrode layer, and also includes a first light-reflecting pattern spaced apart from the light-emitting portion; the material of the light-disturbance portion is the same as that of the first common electrode layer, and the light-disturbance portion is integrally arranged with either the common electrode layer or the first light-reflecting pattern.

[0019] In some embodiments, the second semiconductor layer is provided with a groove, the notch of the groove is located on the first surface of the second semiconductor layer; in the orthographic projection onto the reference plane, the groove is located within the range of the defined dam layer; the light disturbing portion includes a metal layer covering the bottom and inner wall of the groove, and / or scattering particles filled in the groove.

[0020] In some embodiments, the material of the metal layer includes at least one of lithium, gold, and silver; and the material of the scattering particles includes titanium dioxide.

[0021] In some embodiments, along a direction perpendicular to the reference plane, an end portion of the definition dam layer close to the light emitting unit extends into the second semiconductor layer, and the definition dam layer extending into the second semiconductor layer is reused as the light disturbing portion.

[0022] In some embodiments, the first surface of the second semiconductor layer has a recess that is adapted to the shape of the end of the defining dam layer close to the light-emitting unit, and the end of the defining dam layer close to the light-emitting unit extends into the recess; the light-emitting chip also includes an adhesive layer for connecting the light-emitting unit and the color conversion unit; the color conversion unit also includes an optical functional part arranged in the opening area of ​​the defining dam layer, and an encapsulation layer for encapsulating the optical functional part and the defining dam layer; the end of the defining dam layer close to the light-emitting unit passes through the adhesive layer, and a portion of the encapsulation layer extends into the recess and wraps the end of the defining dam layer extending into the recess.

[0023] In some embodiments, the second semiconductor layer includes a plurality of semiconductor portions spaced apart, and in an orthographic projection onto the reference plane, one of the semiconductor portions covers at least one of the light-emitting portions; the light-disturbing portion includes a light-extraction structure disposed on the first surface of the second semiconductor layer.

[0024] In some embodiments, the light extraction structure includes a plurality of protrusions arranged in an array, and the protrusions are triangular or trapezoidal.

[0025] In some embodiments, the light-emitting portion further includes a first electrode and a common electrode layer electrically connected to the light-emitting layer, and arranged on the second surface of the second semiconductor layer; the light-disturbing portion includes a raised ring arranged on the second surface of the second semiconductor layer, and in the orthographic projection onto the reference plane, the raised ring is arranged around the first electrode and the common electrode layer.

[0026] In some embodiments, the raised ring and the second semiconductor layer are an integral structure.

[0027] In some embodiments, the light-disturbing portion includes: a plurality of rows of grating strips spaced apart on the first surface of the second semiconductor layer, and in an orthographic projection onto a reference plane, the plurality of rows of grating strips are arranged around the light-emitting layer.

[0028] In some embodiments, the light-emitting chip further includes: an adhesive layer disposed between the light-emitting unit and the color conversion unit for connecting the light-emitting unit and the color conversion unit; the light-disturbing portion includes: scattering particles dispersed in the adhesive layer.

[0029] In some embodiments, the material of the scattering particles includes titanium dioxide.

[0030] In some embodiments, the light-emitting chip further includes: an adhesive layer disposed between the light-emitting unit and the color conversion unit, for connecting the light-emitting unit and the color conversion unit; the light-disturbing portion includes: a multilayer light-guiding film stacked sequentially on one side of the adhesive layer close to the light-emitting unit, and the refractive index of the multilayer light-guiding film decreases sequentially along the first direction and from the light-emitting unit to the color conversion unit.

[0031] In some embodiments, in the multilayer light guiding film, the difference in refractive index between every two adjacent layers of the light guiding film is greater than or equal to 0.01.

[0032] In some embodiments, the light-emitting chip further includes: a substrate and a light-blocking portion, the substrate being arranged on a side of the color conversion unit away from the light-emitting unit; the substrate including a first part, and a second part surrounding the first part, the first part overlapping with the color conversion unit, and the second part not overlapping with the color conversion unit; the light-blocking portion being arranged on a surface of the second part close to the color conversion unit, or away from the surface of the color conversion unit.

[0033] In some embodiments, the material of the light blocking portion includes metal material, black resin, amorphous silicon or titanium dioxide.

[0034] In another aspect, a display substrate is provided, comprising: a light-emitting chip according to any one of the above embodiments; and a driving circuit layer for driving the light-emitting chip to emit light.

[0035] In another aspect, a display device is provided, comprising: a display substrate as described in any one of the above embodiments; and a control circuit configured to provide an electrical signal to the display substrate. BRIEF DESCRIPTION OF THE DRAWINGS

[0036] To more clearly illustrate the technical solutions of the present disclosure, the following briefly introduces the drawings required for use in some embodiments of the present disclosure. Obviously, the drawings described below are only drawings of some embodiments of the present disclosure, and those skilled in the art can also derive other drawings based on these drawings. Furthermore, the drawings described below are schematic diagrams and are not intended to limit the actual dimensions of the products, actual processes of the methods, actual timing of signals, and the like involved in the embodiments of the present disclosure.

[0037] FIG1 is a structural diagram of a mobile phone provided according to some embodiments of the present disclosure;

[0038] FIG2 is a structural diagram of a display substrate provided according to some embodiments of the present disclosure;

[0039] FIG3 is a structural diagram of a light-emitting chip provided according to some embodiments of the present disclosure;

[0040] FIG4 is a cross-sectional view of the light emitting chip provided in FIG3 along the cross-sectional line QQ;

[0041] FIG5 is another structural diagram of a light-emitting chip provided according to some embodiments of the present disclosure;

[0042] FIG6 is another structural diagram of a light-emitting chip provided according to some embodiments of the present disclosure;

[0043] FIG7 is another structural diagram of a light-emitting chip provided according to some embodiments of the present disclosure;

[0044] FIG8 is a structural diagram of a wafer provided according to some embodiments of the present disclosure;

[0045] FIG9 is a flow chart of a method for preparing an initial chip wafer unit according to some embodiments of the present disclosure;

[0046] 10 to 20 are diagrams showing steps of a method for preparing an initial chip wafer unit according to some embodiments of the present disclosure;

[0047] FIG21 is a flow chart of a method for preparing an optical function unit according to some embodiments of the present disclosure;

[0048] 22 to 26 are diagrams showing steps of a method for preparing an optical function unit according to some embodiments of the present disclosure;

[0049] FIG27 is a flow chart illustrating how to assemble an optical function unit and an initial chip wafer unit into a light-emitting chip according to some embodiments of the present disclosure;

[0050] 28 to 35 are diagrams showing steps of assembling an optical function unit and an initial chip wafer unit to form a light-emitting chip according to some embodiments of the present disclosure;

[0051] FIG36 is a flow chart illustrating how to assemble an optical function unit and an initial chip wafer unit to form another light-emitting chip according to some embodiments of the present disclosure;

[0052] 37 and 38 are diagrams showing steps of assembling an optical function unit and an initial chip wafer unit to form another light-emitting chip according to some embodiments of the present disclosure;

[0053] FIG39 is a flow chart illustrating how to assemble an optical function unit and an initial chip wafer unit into another light-emitting chip according to some embodiments of the present disclosure;

[0054] 40 to 44 are diagrams showing steps of assembling an optical function unit and an initial chip wafer unit to form another light-emitting chip according to some embodiments of the present disclosure;

[0055] FIG45 is a top view of a light-emitting chip provided according to some embodiments of the present disclosure;

[0056] FIG46 is a cross-sectional view of the light emitting chip provided in FIG45 along the cross-sectional line HH;

[0057] FIG47 is a diagram illustrating an internal light path of a light emitting chip according to some embodiments of the present disclosure;

[0058] FIG48 is another internal light path diagram of a light emitting chip according to some embodiments of the present disclosure;

[0059] FIG49 is another structural diagram of a light-emitting chip provided according to some embodiments of the present disclosure;

[0060] FIG50 is a cross-sectional view of the light-emitting chip provided in FIG49 along the cross-sectional line VV;

[0061] FIG51 is another structural diagram of a light-emitting chip provided according to some embodiments of the present disclosure;

[0062] FIG52 is another structural diagram of a light-emitting chip provided according to some embodiments of the present disclosure;

[0063] FIG53 is another structural diagram of a light-emitting chip provided according to some embodiments of the present disclosure;

[0064] FIG54 is another structural diagram of a light-emitting chip according to some embodiments of the present disclosure;

[0065] FIG55 is a cross-sectional structural diagram taken along the cross-sectional line DD in the structural diagram of the light-emitting chip provided in FIG54;

[0066] FIG56 is a view of the nanolayer along direction E in the structural diagram of the light-emitting chip provided in FIG54 ;

[0067] FIG57 is a diagram of light paths on a nano-layer surface according to some embodiments of the present disclosure;

[0068] FIG58 is a graph showing reflectivity test results according to some embodiments of the present disclosure;

[0069] FIG59 is another structural diagram of a light-emitting chip according to some embodiments of the present disclosure;

[0070] FIG60 is another test result diagram of reflectivity according to some embodiments of the present disclosure;

[0071] FIG61 is another structural diagram of a light-emitting chip according to some embodiments of the present disclosure;

[0072] FIG62 is another structural diagram of a light-emitting chip according to some embodiments of the present disclosure;

[0073] FIG63 is another structural diagram of a light-emitting chip according to some embodiments of the present disclosure;

[0074] FIG64 is another structural diagram of a light-emitting chip according to some embodiments of the present disclosure;

[0075] FIG65 is another structural diagram of a light-emitting chip according to some embodiments of the present disclosure;

[0076] FIG66 is a diagram showing the steps of a method for preparing a light-emitting chip according to some embodiments of the present disclosure;

[0077] FIG67 is another structural diagram of a light-emitting chip according to some embodiments of the present disclosure;

[0078] FIG68 is an enlarged view of point I in the structural diagram of the light-emitting chip provided in FIG67 ;

[0079] FIG69 is another structural diagram of a light-emitting chip provided according to some embodiments of the present disclosure;

[0080] FIG70 is another structural diagram of a light-emitting chip according to some embodiments of the present disclosure;

[0081] FIG71 is an enlarged view of grating strips of a light-emitting chip according to some embodiments of the present disclosure;

[0082] FIG72 is another structural diagram of a light-emitting chip according to some embodiments of the present disclosure;

[0083] FIG73 is another structural diagram of a light-emitting chip provided according to some embodiments of the present disclosure;

[0084] FIG74 is a light path diagram of a second semiconductor layer provided according to some embodiments of the present disclosure;

[0085] FIG75 is another internal light path diagram of a light emitting chip according to some embodiments of the present disclosure;

[0086] FIG76 is another structural diagram of a light-emitting chip according to some embodiments of the present disclosure;

[0087] FIG77 is another structural diagram of a light-emitting chip provided according to some embodiments of the present disclosure. DETAILED DESCRIPTION

[0088] The following will be combined with the accompanying drawings to clearly and completely describe the technical solutions in some embodiments of the present disclosure. Obviously, the embodiments described are only some embodiments of the present disclosure, not all embodiments. Based on the embodiments provided by the present disclosure, all other embodiments obtained by ordinary technicians in this field are within the scope of protection of the present disclosure.

[0089] Unless the context requires otherwise, throughout the specification and claims, the term "comprise" and its other forms, such as the third person singular form "comprises" and the present participle form "comprising", are to be interpreted as open and inclusive, that is, "including, but not limited to". In the description of the specification, the terms "one embodiment", "some embodiments", "exemplary embodiments", "example", "specific example" or "some examples" are intended to indicate that a particular feature, structure, material or characteristic associated with the embodiment or example is included in at least one embodiment or example of the present disclosure. The schematic representation of the above terms does not necessarily refer to the same embodiment or example. In addition, the particular features, structures, materials or characteristics may be included in any one or more embodiments or examples in any appropriate manner.

[0090] In the following, the terms "first" and "second" are used for descriptive purposes only and should not be understood to indicate or imply relative importance or implicitly specify the number of the technical features indicated. Therefore, a feature defined as "first" or "second" may explicitly or implicitly include one or more of the features. In the description of the embodiments of the present disclosure, unless otherwise specified, "plurality" means two or more.

[0091] When describing some embodiments, the expressions "coupled" and "connected" and their derivatives may be used. The term "connected" should be understood in a broad sense. For example, "connection" can be a fixed connection, a detachable connection, or an integral connection; it can be directly connected or indirectly connected through an intermediate medium. The term "coupled" indicates, for example, that two or more components are in direct physical or electrical contact. The term "coupled" or "communicatively coupled" may also refer to two or more components that are not in direct contact with each other, but still cooperate or interact with each other. The embodiments disclosed herein are not necessarily limited to the contents of this document.

[0092] “At least one of A, B and C” has the same meaning as “at least one of A, B or C” and both include the following combinations of A, B and C: A only, B only, C only, the combination of A and B, the combination of A and C, the combination of B and C, and the combination of A, B and C.

[0093] “A and / or B” includes the following three combinations: A only, B only, and a combination of A and B.

[0094] As used herein, "about," "substantially," or "approximately" includes the stated value and an average value that is within an acceptable range of deviation from the particular value as determined by one of ordinary skill in the art taking into account the measurements in question and the errors associated with the measurement of the particular quantity (i.e., the limitations of the measurement system).

[0095] As used herein, "parallel", "perpendicular", and "equal" include the situations described and situations similar to the situations described, and the range of the similar situations is within an acceptable deviation range, wherein the acceptable deviation range is as determined by a person of ordinary skill in the art taking into account the measurement in question and the errors associated with the measurement of the specific quantity (i.e., the limitations of the measurement system). For example, "parallel" includes absolute parallelism and approximate parallelism, wherein the acceptable deviation range of approximate parallelism can be, for example, a deviation within 5°; "perpendicular" includes absolute perpendicularity and approximate perpendicularity, wherein the acceptable deviation range of approximate perpendicularity can also be, for example, a deviation within 5°. "Equal" includes absolute equality and approximate equality, wherein the acceptable deviation range of approximate equality can be, for example, that the difference between the two equals is less than or equal to 5% of either one.

[0096] It will be understood that when a layer or element is referred to as being on another layer or substrate, it can be directly on the other layer or substrate, or intervening layers may be present therebetween.

[0097] Exemplary embodiments are described herein with reference to cross-sectional and / or plan views that are idealized exemplary drawings. In the drawings, the thickness of layers and the area of ​​regions are exaggerated for clarity. Therefore, variations in shape relative to the drawings due to, for example, manufacturing techniques and / or tolerances are contemplated. Therefore, the exemplary embodiments should not be construed as limited to the shapes of the regions shown herein, but rather include deviations in shape due to, for example, manufacturing. For example, an etched region shown as a rectangle will typically have curved features. Therefore, the regions shown in the drawings are schematic in nature, and their shapes are not intended to illustrate the actual shape of regions of the device and are not intended to limit the scope of the exemplary embodiments.

[0098] As shown in FIG. 1 , some embodiments of the present disclosure provide a display device.

[0099] Exemplarily, the display device may be an LED (Light-Emitting Diode, LED for short) display device, a Mini LED (Mini Light-Emitting Diode, Mini LED for short) display device, and a Micro LED (Micro Light-Emitting Diode, Micro LED for short) display device.

[0100] The display device provided by the embodiments of the present disclosure can be any device that displays either moving (e.g., video) or fixed (e.g., still images), and whether text or images. More specifically, it is expected that the embodiments can be implemented in or associated with a variety of electronic devices, such as (but not limited to) mobile phones, wireless devices, personal data assistants (PDAs), handheld or portable computers, GPS receivers / navigators, cameras, MP4 video players, video cameras, game consoles, watches, clocks, calculators, television monitors, flat-panel displays, computer monitors, automotive displays (e.g., odometer displays, etc.), navigation systems, cockpit controls and / or displays, displays of camera views (e.g., displays of rearview cameras in vehicles), electronic photographs, electronic billboards or signs, projectors, architectural structures, packaging, and aesthetic structures (e.g., displays of images of a piece of jewelry), etc.

[0101] As shown in FIG1 , the embodiment of the present disclosure is exemplified by taking a mobile phone 1000 as the display device.

[0102] Exemplarily, the mobile phone 1000 includes: a display substrate 200, and also includes: a frame, a control circuit and other electronic components. The display substrate is arranged in the frame, and the control circuit is used to provide electrical signals to the display substrate.

[0103] The display substrate 200 can be a Mini LED (Mini Light-Emitting Diode) + Quantum Dot (Quantum-Dot, QD) display substrate 200, or a Micro LED (Micro Light-Emitting Diode) + Quantum Dot (Quantum-Dot, QD) display substrate 200. The following description uses the Micro LED (Micro Light-Emitting Diode, Micro LED) + Quantum Dot (Quantum-Dot, QD) display substrate 200 as an example.

[0104] In some examples, as shown in FIG. 2 , the display substrate 200 includes a plurality of light-emitting chips 100 and a driving circuit layer for driving the light-emitting chips 100 to emit light.

[0105] 3 , one light emitting chip 100 is a pixel region P, and one pixel region P includes a plurality of sub-pixel regions S1. The plurality of sub-pixel regions S1 may include sub-pixel regions S1 with different luminous colors.

[0106] For example, the plurality of sub-pixel regions may be divided into a first sub-pixel region S11, a second sub-pixel region S12, and a third sub-pixel region S13. The first sub-pixel region S11, the second sub-pixel region S12, and the third sub-pixel region S13 may emit three primary colors of light, respectively. For example, the first sub-pixel region S11 may emit red light, the second sub-pixel region S12 may emit green light, and the third sub-pixel region S13 may emit blue light.

[0107] In some embodiments, as shown in Figure 4, the light-emitting chip 100 includes: a light-emitting unit 10, a color conversion unit 20 arranged on the light-emitting side G of the light-emitting unit 10, an adhesive layer 41 for connecting the light-emitting unit 10 and the color conversion unit 20, and a first substrate 30 arranged on the side of the color conversion unit 20 away from the light-emitting unit 10.

[0108] In some examples, as shown in FIG4 , the light emitting unit 10 includes a plurality of light emitting portions 11 , and one light emitting portion 11 is located in one sub-pixel region.

[0109] Exemplarily, the light emitting portion 11 may be a blue light emitting diode chip unit.

[0110] In some examples, as shown in FIG4 , each light-emitting portion 11 includes a first electrode 12, a current spreading layer 72, a first semiconductor layer 13, and a light-emitting layer 14 stacked along a first direction X. The light-emitting unit 10 further includes a common electrode layer 16 electrically connected to the light-emitting layer 14. The light-emitting unit 10 further includes a second semiconductor layer 15.

[0111] It should be noted that in the embodiments provided in the present disclosure, the light-emitting portion 11 may be provided with a current spreading layer 72 or may not be provided with a current spreading layer 72, and the embodiments provided in the present disclosure do not limit this.

[0112] In some examples, the first electrode 12 electrically connected to the first semiconductor layer 13 may be the anode of the light emitting portion 11. The material of the first electrode 12 may be chromium platinum gold or tin silver. However, some embodiments of the present disclosure are not limited thereto.

[0113] In some examples, the common electrode layer 16 electrically connected to the second semiconductor layer 15 can be the cathode of the light emitting portion 11. The material of the common electrode layer 16 can be chromium platinum gold or tin silver. However, some embodiments of the present disclosure are not limited thereto.

[0114] In some examples, the light-emitting layer 14 may be a multiple quantum well (MQW) layer. The first semiconductor layer 13 may be a P-type gallium nitride (P-GaN layer), the second semiconductor layer 15 may be an N-type gallium nitride (N-GaN layer), and the material of the current spreading layer 72 may include indium tin oxide.

[0115] Illustratively, when different voltages are applied to the first electrode 12 and the common electrode layer 16 respectively to form an electric field therebetween, a PN junction with a potential barrier can be formed between the first semiconductor layer 13 and the second semiconductor layer 15, and the carriers in the first semiconductor layer 13 and the carriers in the second semiconductor layer 15 will enter the light-emitting layer 14 and recombine. At this time, the excess energy will be released in the form of light, thereby directly converting the electrical energy into light energy, so that the light-emitting portion 11 can emit light.

[0116] In some examples, the adhesive layer 41 may be a bonding adhesive layer. For example, the adhesive layer 41 may be benzocyclobutene (BCB). In this case, the refractive index of the adhesive layer 41 is approximately 1.56. However, some embodiments of the present disclosure are not limited thereto.

[0117] In some examples, as shown in FIG4 , the color conversion unit 20 includes a dam layer 21 and an optically functional portion 22 . The dam layer 21 defines a plurality of opening areas K. In a first direction X, each light-emitting unit 11 corresponds to one opening area K, and the optically functional portion 22 is disposed within the opening area K. The first direction X is the direction in which the light-emitting unit 10 and the color conversion unit 20 are stacked.

[0118] Exemplarily, the material of the optical functional portion 22 includes quantum dots (QD), which can emit light of a predetermined color under an external electric field or light pressure. For example, quantum dots can absorb short-wave blue light and stimulate long-wave red and green light. This property enables quantum dots to change the color of light emitted by the light source.

[0119] The color conversion unit 20 also includes a filter layer 24, which includes multiple filter sections 28. The multiple filter sections 28 include a first filter section 241 (not shown, see FIG. 23 ), a second filter section 242, and a third filter section 243. For example, the first filter section 241 is a red filter section, the second filter section 242 is a blue filter section, and the third filter section 243 is a green filter section. The filter layer 24 is used to filter blue light entering it, allowing the three primary colors used for color display to pass through (for example, the first filter section 241 only allows red light, the second filter section 242 only allows blue light, and the third filter section 243 only allows green light), thereby achieving full-color display. For example, a light-shielding layer 23 can be provided between different filter sections (including the first filter section 241, the second filter section 242, and the third filter section 243) to separate the filter sections and prevent color cross-talk between the different filter sections, which could affect the display effect.

[0120] In some examples, the method for preparing the light-emitting chip 100 includes independently manufacturing the light-emitting unit 10 and the color conversion unit 20, and then laminating the light-emitting unit 10 and the color conversion unit 20 via an adhesive layer 41 to form the light-emitting chip 100. This can improve the transfer efficiency of the Micro-LED, reduce chip thickness, and increase fabrication accuracy and product yield. The lamination function of the adhesive layer 41 can be adhesive bonding or metal bonding. See below for details and will not be described in detail here.

[0121] In some embodiments, as shown in FIG. 5 to FIG. 7 , the bonding layer 41 is any one of an indium zinc oxide bonding layer 131 , a metal bonding layer 132 , and an adhesive layer 133 .

[0122] In some examples, as shown in FIG5 , the adhesive layer 41 is an indium zinc oxide bonding layer 131. The indium zinc oxide bonding layer 131 includes a first indium zinc oxide layer 131a and a second indium zinc oxide layer 131b stacked along a first direction X. The first indium zinc oxide layer 131a and the second indium zinc oxide layer 131b are connected by molecular bonding. The first indium zinc oxide layer 131a is stacked and connected to the light-emitting unit 10, and the second indium zinc oxide layer 131b is stacked and connected to the color conversion unit 20. The molecular bonding between the first indium zinc oxide layer 131a and the second indium zinc oxide layer 131b enables the light-emitting unit 10 and the color conversion unit 20 to be bonded together, thereby forming the light-emitting chip 100.

[0123] In some examples, as shown in FIG6 , bonding layer 41 is an adhesive layer 133. Exemplarily, adhesive layer 133 is made of an organic adhesive material such as epoxy resin. Adhesive layer 133 provides adhesion to light-emitting unit 10 and color conversion unit 20, thereby forming light-emitting chip 100. The detailed preparation method is described below and is not detailed here.

[0124] In some examples, as shown in FIG7 , the bonding layer 41 is a metal bonding layer 132 , and the metal bonding layer 132 includes a first sub-metal layer 132 a , a second sub-metal layer 132 b , and a third sub-metal layer 132 c stacked along a first direction X, and the second sub-metal layer 132 b is configured as a eutectic alloy layer connecting the first sub-metal layer 132 a and the third sub-metal layer 132 c .

[0125] The first sub-metal layer 132a is stacked and connected to the light-emitting unit 10, and the third sub-metal layer 132c is stacked and connected to the color conversion unit 20. The connection between the first sub-metal layer 132a and the third sub-metal layer 132c is achieved through the eutectic alloy layer (the second sub-metal layer 132b), and the bonding between the light-emitting unit 10 and the color conversion unit 20 is achieved to form the light-emitting chip 100.

[0126] In some examples, a method for preparing a light-emitting chip 100 includes preparing an initial light-emitting unit 120 and a color conversion unit 20, then forming an adhesive layer 41, and laminating the initial light-emitting unit 120 and the color conversion unit 20 to obtain a light-emitting unit 10, thereby forming the light-emitting chip 100. To more clearly illustrate the present technical solution, three embodiments are provided below to introduce the method for preparing the light-emitting chip 100.

[0127] It should be noted that, in order to clearly illustrate the method for preparing the light-emitting chip 100, the following description will be based on the formation of a single light-emitting chip 100. It is understood that the method for preparing the light-emitting chip 100 is to first form a wafer 300 including a plurality of light-emitting chips 100 arranged in an array, and then cut the wafer 300 into individual light-emitting chips 100. The structure of the wafer 300 is shown in FIG8 .

[0128] The following describes a first embodiment of a method for preparing a light emitting chip 100, according to which the light emitting chip 100 is formed as shown in FIG5. It should be noted that in the steps of preparing the light emitting chip 100, the structure of the light emitting chip 100 can be understood by referring to FIG5 and the contents shown in the step diagram.

[0129] Example 1

[0130] Specifically, as shown in FIG9 , the preparation steps of the initial light emitting unit 120 include: S101 to S108 .

[0131] S101 : As shown in FIG. 10 , an initial gallium nitride buffer layer 1550 , an initial n-type gallium nitride layer 1560 , an initial quantum well layer 1210 and an initial p-type gallium nitride layer 1220 are sequentially formed on one side of a second substrate 91 .

[0132] Exemplarily, the second substrate 91 may be any one of a sapphire substrate and a silicon-based substrate.

[0133] Illustratively, the initial quantum well layer 1210 may be a blue quantum well layer, and the light-emitting portion 11 (not shown in the figure, see FIG. 5 ) formed by the blue quantum well layer emits blue light.

[0134] S102: As shown in Figures 11 and 12, the initial p-type gallium nitride layer 1220 and the initial quantum well layer 1210 are patterned, and the initial n-type gallium nitride layer 1560 and the initial gallium nitride buffer layer 1550 are patterned. This results in the first semiconductor layer 13, the light-emitting layer 14, the n-type gallium nitride layer 156, and the gallium nitride buffer layer 155.

[0135] Exemplarily, the initial quantum well layer 1210 and the initial P-type gallium nitride layer 1220 are patterned by a photolithography process, and the initial quantum well layer 1210 and the initial P-type gallium nitride layer 1220 in the region between adjacent light-emitting portions 11 and the cathode region S17 are removed.

[0136] For example, as shown in Figures 11 and 12, the initial light-emitting unit 120 includes three sub-pixel regions S1 and a cathode region S17. The three sub-pixel regions S1 are respectively the first sub-pixel region S11, the second sub-pixel region S12, and the third sub-pixel region S13. The initial quantum well layer 1210 and the initial P-type gallium nitride layer 1220 are patterned by a photolithography process, and the initial quantum well layer 1210 and the initial P-type gallium nitride layer 1220 outside the three sub-pixel regions S1 and the cathode region S17 are removed. It can be understood that the three sub-pixel regions S1 are the light-emitting regions of the light-emitting chip 100. That is, the sub-pixel regions S1 and the cathode region S17 are also the sub-pixel regions S1 and the cathode region S17 of the light-emitting chip 100.

[0137] The multiple light-emitting sections 11 of the light-emitting unit 10 include a first light-emitting section 12a, a second light-emitting section 12b, and a third light-emitting section 12c. The first light-emitting section 12a is located in the first sub-pixel region S11, the second light-emitting section 12b is located in the second sub-pixel region S12, and the third light-emitting section 12c is located in the third sub-pixel region S13. The cathode region S17 is used to form a common electrode layer 16. The common electrode layer 16 is described in detail below and is not described in detail here.

[0138] As shown in Figures 11 and 12 , this step forms the first quantum well layer 121a and first p-type gallium nitride layer 122a of the first light-emitting portion 12a, the second quantum well layer and second p-type gallium nitride layer of the second light-emitting portion 12b, and the third quantum well layer and third p-type gallium nitride layer of the third light-emitting portion 12c. Figure 11 is a cross-sectional view taken along line AA of Figure 12 .

[0139] Exemplarily, the initial n-type gallium nitride layer 1560 and the initial gallium nitride buffer layer 1550 are patterned using a photolithography process to form an n-type gallium nitride layer 156 and a gallium nitride buffer layer 155, wherein the n-type gallium nitride layer 156 is a conductive layer connecting the first light-emitting portion 12a, the second light-emitting portion 12b, the third light-emitting portion 12c and the common electrode layer 16.

[0140] S103: As shown in FIG. 13 , a current spreading layer 72 is formed.

[0141] Exemplarily, an initial current spreading layer is first formed, and then patterned by a photolithography process to form the current spreading layer 72. The current spreading layer 72 includes a first current spreading layer 125a located in the first sub-pixel region S11, a second current spreading layer located in the second sub-pixel region S12 (not shown in the figure, see FIG12 ), and a third current spreading layer located in the third sub-pixel region S13 (not shown in the figure, see FIG12 ).

[0142] The material of the current spreading layer 72 is ITO (indium tin oxide). Providing the current spreading layer 72 in the sub-pixel region S1 is beneficial to the transmission of holes and improves the electrical performance of the light-emitting chip 100 .

[0143] In some examples, as shown in FIG. 14 , the method for preparing the initial light-emitting unit 120 further includes the step of forming a reflective metal layer 123 .

[0144] For example, an initial reflective metal layer is formed on the side of the current spreading layer 72 away from the second substrate 91, and the initial reflective metal layer is patterned by photolithography to form a reflective metal layer 123 for each light-emitting portion 11. The reflective metal layer 123 reflects light and can improve the light extraction efficiency of the light-emitting portion 11.

[0145] It should be noted that, in the following exemplary drawings, the reflective metal layer 123 is not shown.

[0146] S104: As shown in Figures 15 and 16, a first common electrode layer 16a is formed. Figure 15 is a cross-sectional view taken along the BB cross-sectional line of Figure 16.

[0147] Exemplarily, the first common electrode layer 16 a is formed by a photolithography process.

[0148] Exemplarily, the material of the first common electrode layer 16 a may be any one of titanium, aluminum, nickel and gold.

[0149] Exemplarily, as shown in FIG. 16 , the first common electrode layer 16 a includes a first portion S17 c covering the cathode region S17 , and a second portion S17 b located between the common electrode layer 16 and the adjacent light emitting portion 11 .

[0150] As shown in Figure 16, the first common electrode layer 16a also includes a portion located between two adjacent light-emitting portions 11. The first common electrode layer 16a has the function of connecting the n-type gallium nitride layer 156 and raising the second common electrode layer 16b (not shown in the figure, see Figure 17). The portion of the first common electrode layer 16a located between two adjacent light-emitting portions 11 is called the supporting metal layer S17a. By providing the second portion S17b of the first common electrode layer 16a between the common electrode layer 16 and the adjacent light-emitting portions 11, and providing the supporting metal layer S17a between the light-emitting portions 11, on the one hand, the light-emitting chip 100 can be reinforced to prevent the light-emitting chip 100 from cracking. On the other hand, increasing the volume of the first common electrode layer 16a can play a role in current expansion and reduce the resistance of the light-emitting chip 100.

[0151] In some examples, as shown in FIG16 , the first common electrode layer 16a is located between two adjacent light-emitting portions 11, with a spacing d4 between the first common electrode layer 16a and the two light-emitting portions 11. The spacing d4 between the light-emitting portion 11 and the first common electrode layer 16a ranges from 1 / 10 to 1 / 3 of the spacing d5 between the two adjacent light-emitting portions 11.

[0152] Exemplarily, the distance d4 between the light emitting portion 11 and the first common electrode layer 16 a is 1 / 10, 1 / 4 or 1 / 3 of the distance d5 between two adjacent light emitting portions 11 , which is not limited here.

[0153] By providing a supporting metal layer S17a between two adjacent light-emitting portions 11 and setting the spacing d4 between the light-emitting portion 11 and the first common electrode layer 16a to 1 / 10 to 1 / 3 of the spacing d5 between the two adjacent light-emitting portions 11, the area of ​​the first common electrode layer 16a can be increased while ensuring the aperture ratio of the area where the light-emitting portion 11 of the light-emitting chip 100 is located, thereby reducing the resistance of the light-emitting chip 100, preventing the light-emitting chip 100 from cracking, and improving the stability of the light-emitting chip 100.

[0154] Exemplarily, as shown in FIG16 , the distance d4 between the light emitting portion 11 and the first common electrode layer 16 a ranges from 8 μm to 10 μm.

[0155] Exemplarily, the distance d4 between the light emitting portion 11 and the first common electrode layer 16 a is 8 μm, 9 μm, or 10 μm, etc., which is not limited here.

[0156] S105 : As shown in FIG. 15 and FIG. 16 , a fifth insulating layer 19 is formed. A plurality of via holes H are provided on the fifth insulating layer 19 .

[0157] Exemplarily, an initial insulating layer is formed on a side of the first common electrode layer 16a away from the second substrate 91 through a deposition process, and a plurality of via holes H are formed through a photolithography process. As shown in FIG16 , the plurality of via holes H include a first via hole H1, a second via hole H2, a third via hole H3, and a fourth via hole H4. The first via hole H1 is provided corresponding to the first light-emitting portion 12a, the second via hole H2 is provided corresponding to the second light-emitting portion 12b, the third via hole H3 is provided corresponding to the third light-emitting portion 12c, and the fourth via hole H4 is provided corresponding to the cathode region S17.

[0158] S106: As shown in Figures 17 and 18, an electrode 92 is formed, wherein the electrode 92 includes a first sub-electrode 124a, a second sub-electrode 192, a third sub-electrode 193 and a second common electrode layer 16b. Figure 17 is a cross-sectional view taken along the CC section line of Figure 18.

[0159] The first sub-electrode 124 a , the second sub-electrode 192 , and the third sub-electrode 193 are referred to as the first electrode 12 .

[0160] Exemplarily, the electrode 92 is formed by a patterning process. The first sub-electrode 124a is disposed corresponding to the first light-emitting portion 12a, the second sub-electrode 192 is disposed corresponding to the second light-emitting portion 12b, the third sub-electrode 193 is disposed corresponding to the third light-emitting portion 12c, and the second common electrode layer 16b and the first common electrode layer 16a form the common electrode layer 16.

[0161] S107 : As shown in FIG. 19 , a temporary substrate 70 is bonded to the side of the electrode 92 away from the second substrate 91 .

[0162] Exemplarily, a temporary adhesive layer 48 and a debonding layer 49 are used to temporarily bond the temporary substrate 70. The temporary adhesive layer 48 has an adhesive function, and the debonding layer 49 can be debonded under the irradiation of target light (e.g., ultraviolet light and / or laser light). The temporary adhesive layer 48 and the debonding layer 49 have the function of temporarily bonding the temporary substrate 70.

[0163] S108: As shown in FIG. 20 , the second substrate 91 is removed.

[0164] After the second substrate 91 is removed, the initial light emitting unit 120 is formed.

[0165] For example, the second substrate 91 may be a sapphire substrate, and the sapphire substrate is removed by laser stripping.

[0166] Exemplarily, the second substrate 91 may be a silicon-based substrate, and the temporary substrate 70 may be protected by an acid-proof film or wax seal. The initial light-emitting unit 120 may be placed in a hydrofluoric acid (HF) etching tank, and the second substrate 91 may be removed by etching.

[0167] It is understood that, compared to the light-emitting unit 10, the initial light-emitting unit 120 is provided with a temporary substrate 70 on the side of the electrode 92 away from the gallium nitride buffer layer 155. The temporary substrate 70, the adhesive layer 41, and the debonding layer 49 on the initial light-emitting unit 120 are removed to obtain the light-emitting unit 10.

[0168] The following describes the steps for preparing the color conversion unit 20 , as shown in FIG. 21 , including steps R201 to R203 .

[0169] R201 : As shown in FIG. 22 , a filter layer 24 and a definition dam layer 21 are formed on an initial first substrate 310 .

[0170] The filter layer 24 includes a plurality of filter portions 28 , which define the dam layer 21 to be disposed on a side of the filter layer 24 away from the initial first substrate 310 .

[0171] For example, the initial first substrate 310 may be a glass substrate. Specifically, the first substrate 310 may be configured to be transparent to visible light.

[0172] Exemplarily, the light-shielding layer 23 and the plurality of filters 28 are formed by coating, exposure, development, and post-baking. For example, as shown in FIG23 , the plurality of filters 28 include a first filter 241, a second filter 242, and a third filter 243. For example, the first filter 241 is a red filter, the second filter 242 is a blue filter, and the third filter 243 is a green filter. FIG22 is a cross-sectional view taken along the MM section line of FIG23 .

[0173] For example, as shown in FIG22 , a definition dam layer 21 is formed on a side of the light shielding layer 23 away from the initial first substrate 310 by coating, exposure, development, and post-baking. The definition dam layer 21 defines a plurality of opening areas K. For example, as shown in FIG23 , the plurality of opening areas K include a first opening area K1, a second opening area K2, and a third opening area K3.

[0174] R202: As shown in FIG. 24 , the optical function portion 22 is formed.

[0175] Exemplarily, as shown in Figure 25, the optically functional portion 22 is formed in the first opening area K1, the second opening area K2, and the third opening area K3 using coating, exposure, development, post-baking, or inkjet printing. Exemplarily, the optically functional portion 22 includes a first optically functional portion 22a, a second optically functional portion 22b, and a third optically functional portion 22c. The first optically functional portion 22a is formed in the first opening area K1; the second optically functional portion 22b is formed in the second opening area K2; and the third optically functional portion 22c is formed in the third opening area K3. Figure 24 is a cross-sectional view of Figure 25 taken along section line EE.

[0176] For example, as shown in Figures 18 and 25 , the light-emitting chip 100 may include a red sub-pixel R, a green sub-pixel G, and a blue sub-pixel B. As shown in Figure 18 , the light-emitting portion 11 includes a first light-emitting portion 12a, a second light-emitting portion 12b, and a third light-emitting portion 12c; the first light emitted by the first light-emitting portion 12a, the second light-emitting portion 12b, and the third light-emitting portion 12c each includes at least one of blue light and ultraviolet light.

[0177] As shown in Figures 18 and 25, the first optically functional portion 22a is used to convert the first light into red light. For example, the first optically functional portion 22a includes red quantum dots that convert the first light into red light. Preferably, the first optically functional portion 22a also includes scattering particles for scattering the light. Here, after the first light emitted by the first light-emitting portion 12a is emitted into the first optically functional portion 22a distributed within the first opening area K1, the red quantum dots convert the first light into red light. The scattering particles scatter the first light and the red light, ensuring that more of the first light is converted into red light by the red quantum dots. This also ensures that the output angle of the converted red light is larger, thereby ensuring a wider viewing angle for the display substrate 200 incorporating the light-emitting chip 100. To this end, the red subpixel R in the light-emitting chip 100 may include: the first light-emitting portion 12a and the first optically functional portion 22a.

[0178] The third optically functional portion 22c is used to convert the first light into green light. For example, the third optically functional portion 22c includes green quantum dots that convert the first light into green light. Preferably, the third optically functional portion 22c also includes scattering particles for scattering the light. Here, after the first light emitted by the third light-emitting portion 12c reaches the third optically functional portion 22c distributed within the third opening area K3, it is converted into green light by the green quantum dots. The scattering particles scatter the first and green light, ensuring that more of the first light is converted into green light by the green quantum dots. This also ensures that the emitted green light has a wide emission angle, thereby increasing the viewing angle of the display substrate 200 integrated with the light-emitting chip 100. To this end, the red sub-pixel R in the light-emitting chip 100 may include: the first light-emitting portion 12a and the first optically functional portion 22a. To this end, the green sub-pixel G in the light-emitting chip 100 may include: the third light-emitting portion 12c and the third optically functional portion 22c.

[0179] The second optically functional portion 22b is used to convert the first light into blue light or maintain blue light emission. For example, when the first light contains only blue light, the second optically functional portion 22b can be a transparent portion or include blue quantum dots. The transparent portion directly transmits the first light, while the blue quantum dots convert the first light into blue light of a different wavelength. Preferably, the second optically functional portion 22b also includes scattering particles for scattering light. Here, after the first light emitted by the second light-emitting portion 12b reaches the second optically functional portion 22b distributed within the third opening area K3, the scattering particles scatter the first light, ensuring a wide angle of blue light emission and, in turn, a wide viewing angle for the display substrate 200 integrated with the light-emitting chip 100. For example, when the first light contains ultraviolet light, the second optically functional portion 22b includes blue quantum dots that convert the first light into blue light, or the second optically functional portion 22b includes both scattering particles for scattering light and blue quantum dots for converting ultraviolet light into blue light. Here, after the first light emitted by the second light-emitting portion 12b is emitted to the second optically functional portion 22b distributed within the third opening area K3, the blue quantum dots can convert the ultraviolet light in the first light into blue light. The scattering particles can scatter the first light and the blue light, ensuring that more ultraviolet light is converted into blue light by the blue quantum dots. This can also ensure that the emission angle of the converted blue light is large, thereby ensuring a wide viewing angle for the display substrate 200 integrated with this light-emitting chip 100. To this end, the blue sub-pixel B in the light-emitting chip 100 can include: a second light-emitting portion 12b and a second optically functional portion 22b.

[0180] In the embodiment of the present disclosure, as shown in FIG23 and FIG24 , the color conversion unit 20 in the light emitting chip 100 may further include a filter layer 24 . The filter layer 24 includes a plurality of filter portions 28 .

[0181] For example, as shown in Figures 23 and 25, the filter section 28 may include a first filter section 241, a second filter section 242, and a third filter section 243. Here, the first filter section 241 may be provided corresponding to the first optical function section 22a, the third filter section 243 may be provided corresponding to the third optical function section 22c, and the second filter section 242 may be provided corresponding to the second optical function section 22b. To this end, the red sub-pixel R in the light-emitting chip 100 may further include the first filter section 241; the green sub-pixel G in the light-emitting chip 100 may further include the third filter section 243; and the blue sub-pixel B in the light-emitting chip 100 may further include the second filter section 242.

[0182] For example, the first light emitted by the first light-emitting portion 12a, the second light-emitting portion 12b, and the third light-emitting portion 12c in the light-emitting portion 11 are all blue light. The first filter portion 241 can be a red color block that transmits red light and absorbs light of other colors. In this way, the light emitted from the first optically functional portion 22a can pass through the first filter portion 241 before being emitted. The first filter portion 241 can filter out light of colors other than red, ensuring that the red sub-pixel R in the light-emitting chip 100 can filter out blue light components. It should be noted that, in other possible implementations, the first filter portion 241 may also be: a film layer for transmitting red light and reflecting blue light. In this way, after the light emitted from the first optical functional portion 22a is emitted to the first filter portion 241, the red light in these light rays can pass through the first filter portion 241 and then be emitted, while the blue light in these light rays can be reflected back to the first optical functional portion 22a by the first filter portion 241, so that the red quantum dots in the first optical functional portion 22a can excite the blue light into red light. In this way, the excitation efficiency of the red quantum dots can be further improved.

[0183] For example, if the first light emitted by the first light-emitting portion 12a, the second light-emitting portion 12b, and the third light-emitting portion 12c in the light-emitting portion 11 is all blue light, the third filter portion 243 may be a green color block that transmits green light and absorbs light of other colors. In this way, light emitted from the third optically functional portion 22c can pass through the third filter portion 243 before exiting, and the third filter portion 243 can filter out light of all colors except green light, thereby ensuring that the green sub-pixel G in the light-emitting chip 100 can filter out blue light components. It should be noted that, in other possible implementations, the third filter portion 243 may also be: a film layer for transmitting green light and reflecting blue light. In this way, after the light emitted from the third optical functional portion 22c is emitted to the third filter portion 243, the green light in these light rays can pass through the third filter portion 243 before being emitted, while the blue light in these light rays can be reflected back to the third optical functional portion 22c by the third filter portion 243, so that the green quantum dots in the third optical functional portion 22c can excite the blue light into green light. In this way, the excitation efficiency of the green quantum dots can be further improved.

[0184] For example, the film structures of the first filter portion 241 and the third filter portion 243 can be the same and can be prepared through the same process; for example, the first filter portion 241 and the third filter portion 243 are both films that transmit red light and green light and reflect blue light.

[0185] For example, the first light emitted by the first light-emitting portion 12a, the second light-emitting portion 12b, and the third light-emitting portion 12c in the light-emitting portion 11 are all blue light. The second filter portion 242 may be a blue color block that transmits blue light and absorbs light of other colors. In this way, light emitted from the second optically functional portion 22b can pass through the second filter portion 242 before exiting. The second filter portion 242 can filter out light of other colors except blue light, thereby ensuring that the blue sub-pixel B in the light-emitting chip 100 can emit relatively pure blue light.

[0186] For example, the first light emitted by the first light emitting portion 12a, the second light emitting portion 12b and the third light emitting portion 12c in the light emitting portion 11 are all blue light, and the second filter portion 242 can be a transparent block that can transmit blue light.

[0187] R203: As shown in FIG. 26 , a packaging layer 26 is formed.

[0188] After the encapsulation layer 26 is formed, the color conversion unit 20 is obtained.

[0189] For example, a CVD (chemical vapor deposition) method is used to deposit an encapsulation layer 26 on a side of the initial first substrate 310 away from the initial first substrate 310. The encapsulation layer 26 covers the optically functional portion 22 and the definition dam layer 21. Specifically, the orthographic projection of the optically functional portion 22 on the first substrate 30 and the orthographic projection of the definition dam layer 21 on the first substrate 30 are both located within the orthographic projection of the encapsulation layer 26 on the first substrate 30. In this way, the optically functional portion 22 and the definition dam layer 21 are integrally encapsulated, which can isolate water and oxygen, thereby improving the life of the light-emitting chip 100.

[0190] The following describes the steps of forming the adhesive layer 41 and assembling the color conversion unit 20 and the initial light-emitting unit 120 through the adhesive layer 41 to form the light-emitting chip 100 , as shown in FIG. 27 , including steps T301 to T306 .

[0191] T301 : As shown in FIG. 28 , a first indium zinc oxide layer 131 a is formed on a side of the initial light emitting unit 120 away from the temporary substrate 70 .

[0192] That is, the first indium zinc oxide layer 131 a is formed on the side of the gallium nitride buffer layer 155 away from the temporary substrate 70 .

[0193] Illustratively, the first indium zinc oxide layer 131 a is formed by a photolithography process.

[0194] Exemplarily, during the preparation of the initial light-emitting units 120, a first large plate M comprising a plurality of arrayed initial light-emitting units 120 is simultaneously formed, as shown in FIG29 . This step forms a first indium zinc oxide layer on the initial light-emitting units 120 of the first large plate M. The first large plate M is then cut to form a plurality of first initial wafers A, as shown in FIG30 . The first initial wafer A is circular and includes a plurality of initial light-emitting units 120 provided with a first indium zinc oxide layer 131a. Exemplarily, the size of the first initial wafer A is 4 inches or 6 inches.

[0195] Exemplarily, during the preparation of the initial light-emitting units 120, a first initial wafer A comprising a plurality of initial light-emitting units 120 arranged in an array is directly formed. The first initial wafer A can be circular and includes a plurality of initial light-emitting units 120 provided with a first indium zinc oxide layer 131a. Exemplarily, the size of the first initial wafer A is 4 inches or 6 inches.

[0196] T302 : As shown in FIG. 31 , a second indium zinc oxide layer 131 b is formed on a side of the color conversion unit 20 away from the initial first substrate 310 .

[0197] That is, the second indium zinc oxide layer 131 b is formed on the side of the encapsulation layer 26 away from the initial first substrate 310 .

[0198] Illustratively, the second indium zinc oxide layer 131 b is formed by a photolithography process.

[0199] During the preparation of the color conversion units 20, a second large plate N, comprising a plurality of color conversion units 20 arranged in an array, is simultaneously formed, as shown in FIG32 . In this step, a second indium zinc oxide layer 131b is formed on the color conversion units 20 of the second large plate N. The second large plate N is then cut to form a plurality of second master wafers B, as shown in FIG33 . The second master wafers B are circular and include a plurality of color conversion units 20 provided with the second indium zinc oxide layer 131b. The second master wafers B are of the same or comparable size to the first initial wafer A, facilitating alignment.

[0200] The following describes the steps of assembling the first initial wafer A and the second mother wafer B to finally form a single light-emitting chip 100. It should be noted that the following takes the formation of a single light-emitting chip 100 as an example.

[0201] T303: As shown in FIG34 , the first indium zinc oxide layer 131 a and the second indium zinc oxide layer 131 b are bonded.

[0202] The bonding between the first indium zinc oxide layer 131 a and the second indium zinc oxide layer 131 b is used to achieve the bonding between the initial light emitting unit 120 and the color conversion unit 20 .

[0203] For example, the thickness d11 of the first indium zinc oxide layer 131a and the thickness d12 of the second indium zinc oxide layer 131b can be the same or different, and this is not limited here. The sum of the thickness d11 of the first indium zinc oxide layer 131a and the thickness d12 of the second indium zinc oxide layer 131b is the film thickness of the indium zinc oxide bonding layer 131.

[0204] Exemplarily, the steps of bonding the first indium zinc oxide layer 131a and the second indium zinc oxide layer 131b include U1 to U3:

[0205] U1: The surface of the first indium zinc oxide layer 131 a away from the temporary substrate 70 is treated with oxygen plasma to activate the surface of the first indium zinc oxide layer 131 a.

[0206] U2: The surface of the second indium zinc oxide layer 131 b away from the initial first substrate 310 is treated with oxygen plasma to activate the surface of the second indium zinc oxide layer 131 b.

[0207] U3: Pressing the first indium zinc oxide layer 131 a and the second indium zinc oxide layer 131 b together under certain temperature conditions to form an adhesive layer 41 .

[0208] T304: Remove the temporary substrate 70.

[0209] After removing the temporary substrate 70 , the initial light emitting unit 120 is formed into a light emitting unit 10 , the structure of which is shown in FIG. 35 .

[0210] Exemplarily, the debonding layer 49 is debonded by irradiation with ultraviolet light, and the temporary adhesive layer 48 , the debonding layer 49 and the temporary substrate 70 are removed.

[0211] T305 : Thinning the initial first substrate 310 to form the first substrate 30 .

[0212] After this step, a structure including a plurality of light-emitting chips 100 as shown in FIG. 5 is obtained.

[0213] For example, the thickness of the initial first substrate 310 is reduced to 60 μm to 200 μm. The resulting light-emitting chip 100 has a shape close to a cube, making the light-emitting chip 100 more stable and easier to use in subsequent processes. Using a thicker initial first substrate 310 during the preparation of the light-emitting chip 100 facilitates processing of the light-emitting chip 100.

[0214] Exemplarily, an acid-proof film is applied to the first side of the initial first substrate 310 , and then the second side of the initial first substrate 310 is thinned, wherein the plurality of light-emitting portions 11 are disposed on the first side of the initial first substrate 310 .

[0215] T306: Cutting to obtain individual light-emitting chips 100 .

[0216] Exemplarily, a blue film is applied to the side of the first substrate 30 away from the electrode 92 for protection, and then laser cutting is performed to obtain a single light-emitting chip 100 .

[0217] For example, laser blind cutting can be used in step T306, and after laser blind cutting, stress is applied to separate the light emitting chips 100. When laser blind cutting is used, it is not necessary to apply a blue film to protect the side of the first substrate 30 away from the electrode 92.

[0218] Through the above steps S101 to S108, steps R201 to R203, and steps T301 to T306, the light-emitting chip 100 shown in FIG5 is formed. The projection of the indium zinc oxide bonding layer 131 on the multiple light-emitting portions 11 covers the multiple light-emitting portions 11. In other words, when the indium zinc oxide bonding layer 131 is used as the adhesive layer 41, the indium zinc oxide bonding layer 131 is provided as a whole layer, and the orthographic projection of the indium zinc oxide bonding layer 131 on the first substrate 30 completely covers the orthographic projections of the multiple light-emitting portions 11 on the first substrate 30. The indium zinc oxide bonding layer 131 is a transparent film layer. Therefore, the entire indium zinc oxide bonding layer 131 does not affect the light emitted by the multiple light-emitting portions 11. In this embodiment, the use of the indium zinc oxide bonding layer 131 as the adhesive layer 41 can improve the precision of the adhesive layer 41, thereby improving the product yield of the light-emitting chip 100, and the resulting light-emitting chip 100 is relatively thin.

[0219] The following describes a second embodiment of a method for preparing the light emitting chip 100, according to which the light emitting chip 100 is formed as shown in FIG6. It should be noted that in the steps of preparing the light emitting chip 100, the structure of the light emitting chip 100 can be understood by referring to FIG6 and the contents shown in the step diagram.

[0220] Example 2

[0221] Illustratively, the steps for preparing the initial light-emitting unit 120 refer to steps S101 to S108 , and the steps for preparing the color conversion unit 20 refer to steps R201 to R203 , which are not described in detail here.

[0222] After forming the initial light-emitting unit 120 and the color conversion unit 20, the color conversion unit 20 and the initial light-emitting unit 120 are assembled together by the adhesive layer 41 formed by the adhesive layer 133 to form the light-emitting chip 100, as shown in Figure 36. This step includes P301 to P305.

[0223] P301 : As shown in FIG. 37 , an adhesive layer 133 is applied to a side of the initial light emitting unit 120 away from the temporary substrate 70 .

[0224] That is, the adhesive layer 133 is coated on the side of the gallium nitride buffer layer 155 away from the temporary substrate 70 .

[0225] Exemplarily, the adhesive layer 133 is made of an organic adhesive material such as epoxy resin, and is formed by a stencil printing process, ensuring that no residual material forming the adhesive layer 133 remains on the dicing line J. As shown in FIG8 , the dicing line J is located between two adjacent light-emitting chips 100 on the wafer 300. FIG8 shows only one dicing line J. It will be appreciated that, in order to obtain a single light-emitting chip 100, the area between each two adjacent light-emitting chips 100 constitutes the dicing line J.

[0226] It will be appreciated that during the preparation of the initial light-emitting units 120, a large sheet of initial light-emitting units 120 arranged in an array is simultaneously formed. During the preparation of the color conversion units 20, a large sheet of color conversion units 20 arranged in an array is simultaneously formed. Before the color conversion units 20 and the initial light-emitting units 120 are assembled into a box, a step of cutting the large sheet of initial light-emitting units 120 and the large sheet of color conversion units 20 is also included.

[0227] The large plate of the initial light-emitting unit 120 is cut to form a plurality of third initial wafers C, which include a plurality of initial light-emitting units 120 provided with an adhesive layer 133. The large plate of the color conversion unit 20 is cut to form a plurality of fourth mother wafers D, which include a plurality of color conversion units 20. For example,

[0228] For example, during the preparation of the initial light-emitting units 120, a third starting wafer C comprising a plurality of arrayed initial light-emitting units 120 is directly formed, eliminating the need for cutting a large plate. For example, the third starting wafer C is circular. For example, the fourth mother wafer D is circular. The two wafers are of the same or comparable size, facilitating alignment.

[0229] The structures of the third initial wafer C and the fourth mother wafer D can be seen in the examples for the first initial wafer A and the second mother wafer B in Figures 30 and 33 , and will not be further described here. The differences are that the third initial wafer C includes multiple initial light-emitting units 120 provided with an adhesive layer 133, while the first initial wafer A includes multiple initial light-emitting units 120 provided with a first indium zinc oxide layer 131a. The fourth mother wafer D includes multiple color conversion units 20, while the second mother wafer B includes multiple color conversion units 20 provided with a second indium zinc oxide layer 131b.

[0230] The following describes the steps of assembling the third initial wafer C and the fourth mother wafer D to finally form a single light-emitting chip 100 .

[0231] P302: As shown in FIG38, the color conversion unit 20 and the initial light emitting unit 120 are aligned.

[0232] The color conversion unit 20 and the initial light emitting unit 120 are bonded together by an adhesive layer 133 .

[0233] P303: Remove the temporary substrate 70.

[0234] The specific steps can be found in step T304 and will not be repeated here.

[0235] P304 : Thinning the initial first substrate 310 to form the first substrate 30 .

[0236] The specific steps can be found in step T305 and will not be repeated here.

[0237] P305: Cutting to obtain individual light-emitting chips 100.

[0238] The specific steps can be found in step T306 and will not be repeated here.

[0239] Through steps S101 to S108, steps R201 to R203, and steps P301 to P305, the light-emitting chip 100 shown in FIG6 is formed. The bonding layer 41 is an adhesive layer 133. The projection of the adhesive layer 133 on the multiple light-emitting portions 11 covers the multiple light-emitting portions 11. In other words, the adhesive layer 133 is provided as a whole layer, and the orthographic projection of the adhesive layer 133 on the first substrate 30 covers the orthographic projection of the multiple light-emitting portions 11 on the first substrate 30. The adhesive layer 133 is made of a transparent organic adhesive material. The entire adhesive layer 133 does not affect the light emitted by the multiple light-emitting portions 11. In this embodiment, the use of the adhesive layer 133 as the bonding layer 41 can improve the transfer efficiency of the Micro-LED, reduce the chip thickness, and improve the product yield.

[0240] The following describes a third embodiment of a method for preparing a light-emitting chip 100. According to this embodiment, the light-emitting chip 100 shown in FIG7 is formed. It should be noted that in the steps of preparing the light-emitting chip 100, the structure of the light-emitting chip 100 can be understood by referring to FIG7 and the contents shown in the step diagram.

[0241] Example 3

[0242] Illustratively, the steps for preparing the initial light-emitting unit 120 refer to steps S101 to S108 , and the steps for preparing the color conversion unit 20 refer to steps R201 to R203 , which are not described in detail here.

[0243] After forming the initial light-emitting unit 120 and the color conversion unit 20, the color conversion unit 20 and the initial light-emitting unit 120 are assembled together through the adhesive layer 41 formed by the metal bonding layer 132 to form the light-emitting chip 100, as shown in Figure 39. This step includes Q301 to Q306.

[0244] Q301 : As shown in FIG. 40 and FIG. 41 , a first initial sub-metal layer 1310 and a second initial sub-metal layer 1320 are formed on a side of the initial light emitting unit 120 away from the temporary substrate 70 .

[0245] That is, a first initial sub-metal layer 1310 and a second initial sub-metal layer 1320 are formed on the side of the gallium nitride buffer layer 155 away from the temporary substrate 70. Fig. 40 is a cross-sectional view taken along the FF cross-sectional line of Fig. 41 .

[0246] Exemplarily, a whole layer of material for forming the first initial sub-metal layer 1310 is deposited on the side of the gallium nitride buffer layer 155 away from the temporary substrate 70 through a deposition process, and the first initial sub-metal layer 1310 is patterned using a photolithography process. The material of the first initial sub-metal layer 1310 can be any one of Au (gold), Ag (silver), Pb (lead) and Sn (tin).

[0247] Exemplarily, as shown in FIG41 , the first initial sub-metal layer 1310 includes three opening areas K, which are respectively a first sub-opening area K11, a second sub-opening area K21, and a third sub-opening area K31. The first sub-opening area K11 is arranged correspondingly to the first sub-pixel area S11, the second sub-opening area K21 is arranged correspondingly to the second sub-pixel area S12, and the third sub-opening area K31 is arranged correspondingly to the third sub-pixel area S13. The corresponding arrangement of A and B means that the orthographic projections of A and B on the temporary substrate 70 overlap or approximately overlap. For example, the corresponding arrangement of the first sub-opening area K11 and the first sub-pixel area S11 means that the orthographic projections of the first sub-opening area K11 and the first sub-pixel area S11 on the temporary substrate 70 overlap or approximately overlap.

[0248] For example, as shown in FIG. 40 and FIG. 41 , the second initial sub-metal layer 1320 includes a plurality of first-type metal bumps 132 t , and the structure of the first-type metal bumps 132 t may be cylindrical or conical.

[0249] The material of the second initial sub-metal layer 1320 may be In (indium).

[0250] Q302 : As shown in FIG. 42 and FIG. 43 , a third initial sub-metal layer 1330 is formed on a side of the color conversion unit 20 away from the initial first substrate 310 .

[0251] That is, the third initial sub-metal layer 1330 is formed on the side of the encapsulation layer 26 away from the initial first substrate 310 .

[0252] Exemplarily, a whole layer of material for forming the third initial sub-metal layer 1330 is deposited on a side of the encapsulation layer 26 away from the initial first substrate 310 through a deposition process, and patterned using a photolithography process to form the third initial sub-metal layer 1330. The material of the third initial sub-metal layer 1330 can be any one of Au (gold), Ag (silver), Pb (lead), and Sn (tin). The material of the third initial sub-metal layer 1330 can be the same as the material of the first initial sub-metal layer 1310.

[0253] 43 , the third initial sub-metal layer 1330 includes three opening regions K, namely a fourth sub-opening region K41, a fifth sub-opening region K51, and a sixth sub-opening region K61. The fourth sub-opening region K41 is disposed corresponding to the first sub-pixel region S11, the fifth sub-opening region K51 is disposed corresponding to the second sub-pixel region S12, and the sixth sub-opening region K61 is disposed corresponding to the third sub-pixel region S13.

[0254] Q303 : As shown in FIG. 44 , the first initial sub-metal layer 1310 , the second initial sub-metal layer 1320 , and the third initial sub-metal layer 1330 are bonded.

[0255] Exemplarily, the bonding of the first initial sub-metal layer 1310, the second initial sub-metal layer 1320, and the third initial sub-metal layer 1330 is achieved by metal wafer bonding technology. Metal wafer bonding technology refers to a technology that relies on the formation of a eutectic alloy between two different metals to completely bond at a temperature lower than the melting point of each metal. Metal wafer bonding technology can be divided into solid-liquid interdiffusion bonding technology and solid-state diffusion bonding technology according to different bonding temperatures. Among them, the solid-liquid interdiffusion bonding technology has lower requirements for film flatness than the solid-state diffusion bonding technology. In addition, the solid-liquid interdiffusion bonding technology has high bonding strength and short bonding time. Therefore, the solid-liquid interdiffusion bonding technology can be used to form the metal bonding layer 132 to achieve the box-matching of the color conversion unit 20 and the initial light-emitting unit 120.

[0256] As shown in FIG44 , the formed metal bonding layer 132 includes a first sub-metal layer 132a, a second sub-metal layer 132b, and a third sub-metal layer 132c. The first initial sub-metal layer 1310, the second initial sub-metal layer 1320, and the third initial sub-metal layer 1330 are formed by metal wafer bonding technology to form the metal bonding layer 132. The second sub-metal layer 132b is a eutectic alloy layer formed by portions of the first initial sub-metal layer 1310, the second initial sub-metal layer 1320, and the third initial sub-metal layer 1330.

[0257] For example, as shown in FIG44 , the metal bonding layer 132 includes a fourth opening region K4, a fifth opening region, and a sixth opening region. The fourth opening region K4 is arranged corresponding to the first sub-pixel region S11, the fifth opening region is arranged corresponding to the second sub-pixel region S12, and the sixth opening region is arranged corresponding to the third sub-pixel region S13. The arrangement of the second sub-pixel region S12 and the third sub-pixel region S13 can be seen in FIG43 . The first sub-opening region K11 and the fourth sub-opening region K41 form the fourth opening region K4. Similarly, the second sub-opening region K21 and the fifth sub-opening region K51 form the fifth opening region, and the third sub-opening region K31 and the sixth sub-opening region K61 form the sixth opening region. The arrangement of the second sub-opening region K21, the third sub-opening region K31, the fifth sub-opening region K51, and the sixth sub-opening region K61 can be seen in FIG41 and FIG43 .

[0258] Q304: Remove the temporary substrate 70.

[0259] The specific steps can be found in step T304 and will not be repeated here.

[0260] Q305 : Thinning the initial first substrate 310 to form the first substrate 30 .

[0261] The specific steps can be found in step T305 and will not be repeated here.

[0262] Q306: Cutting to obtain individual light-emitting chips 100.

[0263] The specific steps can be found in step T306 and will not be repeated here.

[0264] The light-emitting chip 100 shown in FIG7 is formed through the above steps S101 to S108, steps R201 to R203, and steps Q301 to Q306. The bonding layer 41 is a metal bonding layer 132. The metal bonding layer 132 needs to be provided with opening areas K corresponding to the plurality of light-emitting portions 11. Since the metal bonding layer 132 is opaque, it is necessary to provide openings in the areas of the metal bonding layer 132 corresponding to the light-emitting portions 11 to allow light to escape. It should be noted that the area corresponding to the light-emitting portion 11 of the metal bonding layer 132 refers to the area where the orthographic projections of the light-emitting portion 11 and the metal bonding layer 132 on the first substrate 30 overlap. In this embodiment, the metal bonding layer 132 is used as the bonding layer 41, which can improve the accuracy of the formed bonding layer 41.

[0265] For example, as shown in FIG46 , the first light-emitting portion 12a is arranged corresponding to the first sub-electrode 124a, and the second light-emitting portion 12b is arranged corresponding to the second sub-electrode 192. The distance d6 between the first sub-electrode 124a and the second sub-electrode 192 is smaller than the distance d5 between the first light-emitting portion 12a and the second light-emitting portion 12b.

[0266] By setting the spacing d6 between two adjacent anode electrodes to be less than or equal to the spacing d5 between the two light-emitting portions 11 where the two anode electrodes are located, that is, the boundary of the anode electrode exceeds the boundary of the light-emitting portion 11 where it is located. In this way, the anode electrode not only has a conductive function but also can ensure that the anode electrode has a larger area for light reflection, thereby improving the light-emitting effect of the light-emitting chip 100.

[0267] In some embodiments, as shown in Figures 45 and 46 , the projection of the filter portion 28 on the first substrate 30 overlaps the projection of the light-emitting portion 11 corresponding to the filter portion 28 on the first substrate 30. The projection of the optically functional portion 22 on the first substrate 30 overlaps the projection of the filter portion 28 corresponding to the optically functional portion 22 on the first substrate 30. The projection of the second optically functional portion 22b on the first substrate 30 overlaps the projection of the second filter portion 242 on the first substrate 30. Figure 46 is a cross-sectional view taken along line HH of Figure 45 .

[0268] That is, in any direction, the projection size of the filter portion 28 on the first substrate 30 is larger than the projection size of the light-emitting portion 11 corresponding to the filter portion 28 on the first substrate 30. The projection size of the optical function portion 22 on the first substrate 30 is larger than the projection size of the filter portion 28 corresponding to the optical function portion 22 on the first substrate 30. The projection size of the second optical function portion 22b on the first substrate 30 is larger than the projection size of the second filter portion 242 on the first substrate 30.

[0269] In some embodiments, as shown in FIG. 45 and FIG. 46 , a dimension d10 of the dam layer 21 in the first direction X is defined to be in a range of 10 μm to 30 μm.

[0270] Exemplarily, the dimension d10 of the dam layer 21 in the first direction X is 10 μm, 15 μm, 20 μm, 25 μm, 28 μm, or 30 μm, etc., and is not limited thereto. Setting the dimension d10 of the dam layer 21 in the first direction X, i.e., its thickness, to 10 μm to 30 μm increases the thickness of the dam layer 21. Since the optically functional portion 22 is disposed within the opening region K of the dam layer 21, the thickness of the optically functional portion 22 is also increased. This design can improve the luminous effect of the light-emitting chip 100.

[0271] In some embodiments, as shown in FIG. 46 , the projection of the color conversion unit 20 on the first substrate 30 covers the projection of the adhesive layer 41 on the first substrate 30 .

[0272] Exemplarily, the material of the bonding layer 41 is an epoxy resin-type organic bonding material. By setting the projection of the color conversion unit 20 on the first substrate 30 to cover the projection of the bonding layer 41 on the first substrate 30, it can be ensured that no organic bonding material will remain at the position of the cutting line J (see Figure 8), thereby facilitating cutting to form the light-emitting chip 100.

[0273] In some examples, as shown in FIG. 46 , a distance d14 between a projected boundary of the color conversion unit 20 on the first substrate 30 and a projected boundary of the adhesive layer 41 on the first substrate 30 ranges from 0 μm to 10 μm.

[0274] Illustratively, the distance d14 between the projected edge of the color conversion unit 20 on the first substrate 30 and the projected edge of the adhesive layer 41 on the first substrate 30 is 0 μm, 2 μm, 5 μm, 7 μm or 10 μm, etc., which is not limited here.

[0275] By setting the distance d14 between the projection boundary of the color conversion unit 20 on the first substrate 30 and the projection boundary of the adhesive layer 41 on the first substrate 30 in the range of 0 μm to 10 μm, it is possible to ensure the bonding stability of the light-emitting chip 100 and, when the material of the adhesive layer 41 is an epoxy resin-based organic adhesive material, ensure that no organic adhesive material remains at the position of the cutting line J (see Figure 8).

[0276] The second semiconductor layer 15 of the light-emitting unit 10 is described below. It should be noted that the second semiconductor layer 15 can be an n-type gallium nitride layer 156 , or the second semiconductor layer 15 can be a stack of a gallium nitride buffer layer 155 and an n-type gallium nitride layer 156 , wherein the gallium nitride buffer layer 155 is located on the side of the n-type gallium nitride layer 156 away from the light-emitting portion 11 .

[0277] In some examples, as shown in FIG47 , the bonding layer 41 of the light-emitting chip 100 is an adhesive layer 133. The refractive index of the second semiconductor layer 15 is 2.45, and the refractive index of the bonding layer 41 is 1.56. Due to the significant difference between the refractive indices of the second semiconductor layer 15 and the bonding layer 41, light from the light-emitting chip 100 is totally internally reflected at the interface between the second semiconductor layer 15 and the bonding layer 41. Light L1 with an angle less than the critical angle α1 with the first direction X propagates upward into the color conversion unit 20. Light L2 with an angle greater than or equal to the critical angle α1 with the first direction X is totally internally reflected in the second semiconductor layer 15 and propagates laterally within the second semiconductor layer 15, forming an optical waveguide. The first direction X is the direction in which the light-emitting unit 10 and the color conversion unit 20 are stacked.

[0278] It should be noted that the calculation method of the critical angle α1 for total reflection between the second semiconductor layer 15 and the bonding layer 41 is: sinα1×2.45=sin90°×1.56

[0279] Therefore, α1 is 39.5°.

[0280] That is, the light L1 with an angle less than 39.5° to the first direction X propagates upward into the color conversion unit 20 , and the light L2 with an angle greater than or equal to 39.5° to the first direction X is totally reflected in the second semiconductor layer 15 .

[0281] The refractive index of air is 1.0. Due to the significant difference between the refractive indices of the second semiconductor layer 15 and air, total internal reflection also occurs at the interface between the second semiconductor layer 15 and air. The normal perpendicular to the second semiconductor layer 15 is called the first normal f1. Light rays that make an angle with the first normal f1 less than the critical angle α2 are emitted from the second semiconductor layer 15 into the air. Light rays that make an angle with the first normal f1 greater than or equal to the critical angle α2 are totally internally reflected within the second semiconductor layer 15.

[0282] It should be noted that the calculation method of the critical angle α2 for total reflection between the second semiconductor layer 15 and the air is: sinα2×2.45=sin90°×1.0

[0283] Therefore, α2 is 24°.

[0284] As shown in Figure 47, light rays emitted from the second semiconductor layer 15 at an angle less than 24° with the first normal line f1 are totally reflected in the air, while light rays emitted from the second semiconductor layer 15 at an angle greater than or equal to 24° with the first normal line f1 are totally reflected in the second semiconductor layer 15. Light rays L3 emitted from the side surface B1 of the second semiconductor layer 15 are scattered in the air and form light leakage W1 near the side surface B2 of the first substrate 30. As shown in Figure 48, light rays L3 emitted from the side surface B1 of the second semiconductor layer 15 propagate obliquely in the air and reach the side surface B2 of the first substrate 30, forming light leakage W2.

[0285] The light leakage W1 and W2 reduce the light extraction efficiency of the display substrate 200 and the display effect of the display substrate 200. Moreover, the light leakage W2 may enter the adjacent light emitting chip 100, thereby causing poor light uniformity.

[0286] Based on this, as shown in FIG. 49 and FIG. 50 , an embodiment of the present disclosure provides a light-emitting chip 100 , which includes a light-emitting unit 10 and a color conversion unit 20 disposed on a light-emitting side G of the light-emitting unit 10 .

[0287] The light emitting unit 10 includes a plurality of light emitting portions 11 , and the light emitting portion 11 includes a first electrode 12 , a first semiconductor layer 13 , and a light emitting layer 14 stacked along a first direction X.

[0288] Exemplarily, the first electrode 12 may be an anode, and the material of the first semiconductor layer 13 includes P-type gallium nitride.

[0289] Exemplarily, one of the plurality of light emitting portions 11 is configured to emit one of a plurality of colors of light, and the plurality of light emitting portions 11 may be configured to emit light of the same color, or the plurality of light emitting portions 11 may be configured to emit light of different colors.

[0290] The light-emitting unit 10 further includes a second semiconductor layer 15 and a common electrode layer 16. The second semiconductor layer 15 is disposed on the light-emitting side G of the plurality of light-emitting portions 11. The second semiconductor layer 15 includes a connecting portion 151 and an auxiliary portion 152. The connecting portion 151 is connected to the light-emitting portion 11, and at least a portion of the auxiliary portion 152 is located between adjacent connecting portions 151. The connecting portion 151 and the auxiliary portion 152 form an integral structure. The common electrode layer 16 is connected to the auxiliary portion 152.

[0291] The second semiconductor layer 15 includes a first surface A1 facing the color conversion unit 20, a second surface A2 facing away from the color conversion unit 20, and a side surface B1 located between the first surface A1 and the second surface A2 and connected to the first surface A1 and the second surface A2. The light-emitting chip 100 also includes a light-disturbing portion 17, which is located around and / or inside the second semiconductor layer 15. The light-disturbing portion 17 can be used to disrupt the optical path of light emitted by the light-emitting layer 14 that propagates along the interior of the second semiconductor layer 15 and is emitted from the side surface B1 of the second semiconductor layer 15.

[0292] By arranging a light disturbing portion 17 around and / or inside the second semiconductor layer 15, the optical path of the light emitted by the light-emitting layer 14 that propagates along the inside of the second semiconductor layer 15 and emerges from the side surface B1 of the second semiconductor layer 15 is destroyed. That is, the light L3 emitted from the side surface B1 of the second semiconductor layer 15 can be effectively destroyed (as shown in Figures 47 and 48), thereby avoiding light leakage W1 (as shown in Figure 47) and light leakage W2 (as shown in Figure 48) formed on the first substrate 30 due to the light L3 emitted from the side surface B1 of the second semiconductor layer 15, thereby improving the light extraction efficiency and display effect of the display substrate 200.

[0293] In some embodiments, a portion of the auxiliary portion 152 located between adjacent connecting portions 151 is connected to one connecting portion 152 on one side and to another connecting portion 152 on the other side.

[0294] In some embodiments, as shown in FIG. 50 , the light-disturbing portion 17 covers the side surface B1 of the second semiconductor layer 15 .

[0295] It should be noted that the light-disturbing portion 17 is arranged in a ring shape around the side surface B1 of the second semiconductor layer 15 .

[0296] Since the light-disturbing portion 17 covers the side surface B1 of the second semiconductor layer 15 , the light-disturbing portion 17 can absorb or reflect light that propagates laterally in the second semiconductor layer 15 to the side surface B1 of the second semiconductor layer 15 .

[0297] In some embodiments, as shown in Figure 50, the light-emitting portion 11 also includes a first electrode 12 electrically connected to the light-emitting layer 14. The first electrode 12 is arranged on the side of the light-emitting layer 14 away from the color conversion unit 20, and the material of the light-disturbing portion 17 is the same as that of the first electrode 12.

[0298] The light-disturbing portion 17 , which is made of the same material as the first electrode 12 , is used to reflect the light emitted by the light-emitting layer 14 , which propagates along the inside of the second semiconductor layer 15 and is emitted from the side surface B1 of the second semiconductor layer 15 .

[0299] That is, the light-disturbing portion 17 is formed simultaneously with the patterning of the first electrode 12 , and the light-disturbing portion 17 is provided in the same layer as the first electrode 12 .

[0300] "Same layer" refers to a layer structure formed by using the same film-forming process to form a specific pattern, and then using the same mask through a single patterning process. Depending on the specific pattern, a single patterning process may include multiple exposure, development, or etching steps, and the specific pattern in the resulting layer structure may be continuous or discontinuous, and these specific patterns may also be at different heights or have different thicknesses.

[0301] As can be seen from the above-described method for preparing the light-emitting chip 100, as shown in FIG38 , it is necessary to first prepare the initial light-emitting unit 120 and the color conversion unit 20. Then, an adhesive layer 41 is formed, and the initial light-emitting unit 120 and the color conversion unit 20 are bonded together to form the light-emitting unit 10, thereby forming the light-emitting chip 100. The specific steps for forming the color conversion unit 20 and the adhesive layer 41 can be found in the above description and will not be repeated here. The following embodiments will similarly describe only the method for preparing the initial light-emitting unit 120.

[0302] The difference in this example is that, when preparing the initial light-emitting unit 120, in step S106 (as shown in FIG9 ), the light-disturbing portion 17 is formed simultaneously with forming the electrode 92 (as shown in FIG17 ). The other steps of preparing the initial light-emitting unit 120 can refer to the above content and will not be repeated here.

[0303] Another embodiment is provided below. As shown in FIG. 51 , the material of the light disturbing portion 17 is the same as that of the second electrode 16 .

[0304] As can be seen from the above, as shown in FIG. 17 , the second electrode 16 includes a first common electrode layer 16 a and a second common electrode layer 16 b , and the material of the light disturbing portion 17 is the same as that of the first common electrode layer 16 a of the second electrode 16 .

[0305] The light-disturbing portion 17 , which is made of the same material as the first common electrode layer 16 a , is used to reflect the light emitted by the light-emitting layer 14 , which propagates along the inside of the second semiconductor layer 15 and is emitted from the side surface B1 of the second semiconductor layer 15 .

[0306] For example, when preparing the initial light-emitting unit 120, in step S104 (as shown in FIG9), when forming the first common electrode layer 16a (as shown in FIG15), the light-disturbing portion 17 is formed simultaneously. The other steps of preparing the initial light-emitting unit 120 can refer to the above content and are not repeated here.

[0307] That is, the light disturbing portion 17 is formed simultaneously with the patterning of the first common electrode layer 16 a of the second electrode 16 , and the light disturbing portion 17 is provided in the same layer as the first common electrode layer 16 a of the second electrode 16 .

[0308] Another embodiment in which the light-disturbing portion 17 covers the side surface B1 of the second semiconductor layer 15 is provided below.

[0309] In some embodiments, as shown in FIG. 52 and FIG. 53 , the material of the light-disturbing portion 17 includes at least one of a metal material, a semiconductor material, and a black resin.

[0310] Exemplarily, as shown in FIG52 , the material of the light-disturbing portion 17 includes: black resin, which is used to absorb light propagating along the inside of the second semiconductor layer 15 and emitted from the side surface B1 of the second semiconductor layer 15 .

[0311] Exemplarily, as shown in FIG53 , the material of the light-disturbing portion 17 includes: amorphous silicon, which is a semiconductor material used to absorb light propagating along the inside of the second semiconductor layer 15 and emitted from the side surface B1 of the second semiconductor layer 15 .

[0312] Exemplarily, as shown in FIG52 , the material of the light-disturbing portion 17 includes metallic silver, which is used to reflect light propagating along the inside of the second semiconductor layer 15 and emitted from the side surface B1 of the second semiconductor layer 15 .

[0313] For example, when preparing the initial light-emitting unit 120, in step S102 (as shown in FIG9 ), after forming the first semiconductor layer 13, the light-emitting layer 14, the n-type gallium nitride layer 156, and the gallium nitride buffer layer 155, a light-disturbing portion 17 is formed on the side of the n-type gallium nitride layer 156 and / or the gallium nitride buffer layer 155. The other steps of preparing the initial light-emitting unit 120 can be referred to above and will not be repeated here.

[0314] In some embodiments, as shown in FIG52 and FIG53 , the cross-section of the second semiconductor layer 15 is trapezoidal, that is, the side surface B1 of the second semiconductor layer 15 forms an angle with the first direction X. Disposing the side surface B1 of the second semiconductor layer 15 obliquely downward and away from the color conversion unit 20 can reflect light propagating through the interior of the second semiconductor layer 15 and emitting from the side surface B1 of the second semiconductor layer 15 in a direction away from the color conversion unit 20 , thereby preventing the light propagating through the interior of the second semiconductor layer 15 and emitting from the side surface B1 of the second semiconductor layer 15 from emitting from the first substrate 30 , thereby improving the light leakage problem at the first substrate 30 .

[0315] Another embodiment in which the light-disturbing portion 17 covers the side surface B1 of the second semiconductor layer 15 is provided below.

[0316] In some embodiments, as shown in FIG. 54 and FIG. 59 , the material of the light-disturbing portion 17 includes a nanosphere material.

[0317] In some examples, as shown in FIG54 , the material of the light-disturbing portion 17 includes nanosilver, nanogold, or nanoaluminum.

[0318] That is, the nano-layer 32 covering the side surface B1 is provided at the side surface B1 of the second semiconductor layer 15 .

[0319] Exemplarily, the radius of the silver nanoparticles ranges from 25 nm to 70 nm.

[0320] Exemplarily, the radius of the silver nanoparticles is 25 nm, 35 nm, 40 nm, 50 nm, 65 nm, or 70 nm, etc., which is not limited here.

[0321] Since the dielectric constant of metal materials is high, the provision of the nanolayer 32 of metal nanomaterials can achieve high reflection in a wide wavelength range, reflecting light that propagates laterally in the second semiconductor layer 15 to the side surface B1 of the second semiconductor layer 15 .

[0322] In some examples, as shown in FIG. 54 , the light-disturbing portion 17 includes a conductive material, and the light-emitting unit 10 further includes: a first insulating layer 31 disposed between the light-disturbing portion 17 and a side surface of the second semiconductor layer 15 .

[0323] The light-emitting unit 10 further includes a first common electrode layer 16a disposed on a side of the second semiconductor layer 15 away from the color conversion unit 20 . The first common electrode layer 16a includes a first portion S17c belonging to the common electrode layer 16 and a first light-reflecting pattern 40 spaced apart from the light-emitting portion 11 .

[0324] The light-emitting unit further includes a second light-reflecting pattern 45 , which is disposed between the light-emitting portion 11 and the common electrode layer 16 and between the first light-reflecting pattern 40 and the light-emitting portion 11 , and covers the side surfaces of the first light-reflecting pattern 40 , the light-emitting portion 11 and the common electrode layer 16 .

[0325] Exemplarily, the second light-reflecting pattern 45 is provided on the same layer as the light-disturbing portion 17. The second light-reflecting pattern 45 is used to reflect the light emitted from the second surface A2 of the second semiconductor layer 15, thereby improving the light extraction efficiency of the display substrate 200.

[0326] Exemplarily, the second light-reflecting pattern 45 covers the side surfaces of the light-emitting portion 11 , the side surfaces of the current spreading layer 72 , the side surfaces of the first semiconductor layer 13 , and the side surfaces of the light-emitting layer 14 .

[0327] For example, when preparing the initial light-emitting unit 120, in step S104 (as shown in FIG9 ) in which the first common electrode layer 16a is formed, as shown in FIG49 , the first portion S17c of the common electrode layer 16 and the first light-reflecting pattern 40 are simultaneously formed, and then the first insulating layer 31 and the nano-layer 32 are formed to obtain the light-disturbing portion 17 and the second light-reflecting pattern 45. The other steps of preparing the initial light-emitting unit 120 can be referred to above and will not be repeated here.

[0328] Illustratively, as shown in FIG54 , a third insulating layer 46 is further provided between the second light-reflecting pattern 45 and the second semiconductor layer 15 , between the second light-reflecting pattern 45 and the first light-reflecting pattern 40 , between the second light-reflecting pattern 45 and the light-emitting portion 11 , and between the second light-reflecting pattern 45 and the common electrode layer 16 .

[0329] It can be understood that the first insulating layer 31 and the third insulating layer 46 are provided in the same layer.

[0330] Exemplarily, the material of the first insulating layer 31 and the third insulating layer 46 includes silicon dioxide. The provision of the first insulating layer 31 and the third insulating layer 46 can prevent the nanospheres from connecting with the current spreading layer 72, the first semiconductor layer 13, the light-emitting layer 14, and the common electrode layer 16 of the light-emitting portion 11, thereby preventing short circuits.

[0331] In some examples, as shown in FIG. 53 , the light emitting unit 10 further includes a second insulating layer 47 disposed on a side of the light disturbing portion 17 away from the second semiconductor layer 15 .

[0332] For example, as shown in FIG54 , a fourth insulating layer may be provided on a side of the second light reflecting pattern 45 away from the second semiconductor layer 15 and the first common electrode layer 16 a .

[0333] The provision of the second insulating layer 47 and the fourth insulating layer can prevent solder paste from overflowing in subsequent processes, thereby preventing the second semiconductor layer 15 and the common electrode layer 16 from being connected and causing a short circuit.

[0334] The thickness of the first insulating layer 31 , the second insulating layer 47 , the third insulating layer 46 and the fourth insulating layer ranges from 0.2 μm to 0.5 μm.

[0335] Exemplarily, the thickness of the first insulating layer 31 is 0.2 μm, 0.3 μm, 0.4 μm, or 0.5 μm, etc., which is not limited here.

[0336] Exemplarily, the thickness of the second insulating layer 47 is 0.2 μm, 0.3 μm, 0.4 μm, or 0.5 μm, etc., which is not limited here.

[0337] Exemplarily, the thickness of the third insulating layer 46 is 0.2 μm, 0.3 μm, 0.4 μm, or 0.5 μm, etc., which is not limited here.

[0338] Exemplarily, the thickness of the fourth insulating layer is 0.2 μm, 0.3 μm, 0.4 μm or 0.5 μm, etc., which is not limited here.

[0339] As an example, a configuration of the nanolayer 32 is provided. FIG55 shows a cross-sectional view taken along the cross-sectional line DD in FIG54 , and FIG56 shows a view of the nanolayer 32 along the direction E in FIG54 , where the direction E is perpendicular to the nanolayer 32. That is, the nanolayer 32 covers the side of the first insulating layer 31 away from the side surface B1 of the second semiconductor layer 15.

[0340] As shown in FIG57 , the nano-layer 32 can effectively reflect light that propagates laterally through the second semiconductor layer 15 to the side surface B1 of the second semiconductor layer 15. As shown in FIG58 , the reflectivity of the nano-layer 32 to light is greater than 80%. Furthermore, the light-disturbing portion 17 of the metal nanomaterial also absorbs light that propagates laterally through the second semiconductor layer 15 to the side surface B1 of the second semiconductor layer 15.

[0341] In some embodiments, as shown in FIG59 , the material of the light-disturbing portion 17 includes semiconductor nanomaterials.

[0342] That is, a nano-layer 32 covering the side surface B1 is provided on the side surface B1 of the second semiconductor layer 15. Exemplarily, the material of the nano-layer 32 includes spherical silicon, and the radius of the silicon is 60 nm.

[0343] It should be noted that silicon has a high dielectric constant, and nanometer-sized silicon can produce strong Mie resonance, significantly enhancing electromagnetic energy near the resonant frequency and confining electromagnetic radiation to the resonant mode. Under magnetic dipole resonance conditions, the transmittance of the array formed by the spherical silicon can be suppressed, achieving high reflection over a wide wavelength range, reflecting light that propagates laterally in the second semiconductor layer 15 to the side surface B1 of the second semiconductor layer 15. It should be noted that Mie resonance is a structural resonance at microwave frequencies.

[0344] For example, the radius of the spherical silicon is 60 nm and the lattice constant is 150 nm. As shown in FIG60 , the reflectivity is higher than 90% in the wavelength range of 380 nm to 500 nm, which can effectively reflect light that propagates laterally in the second semiconductor layer 15 to the side surface B1 of the second semiconductor layer 15 .

[0345] For example, when preparing the initial light-emitting unit 120, in step S104 (as shown in FIG9 ) in which the first common electrode layer 16a is formed, as shown in FIG49 , the first portion S17c of the common electrode layer 16 and the first light-reflecting pattern 40 are simultaneously formed, and then the nanolayer 32 of the semiconductor nanomaterial is formed to obtain the light-disturbing portion 17 and the second light-reflecting pattern 45. The other steps of preparing the initial light-emitting unit 120 can be referred to above and will not be repeated here.

[0346] Another embodiment of disposing the light-disturbing portion 17 is provided below.

[0347] In some embodiments, as shown in Figure 61, the color conversion unit 20 includes: a dam layer 21, which defines a plurality of opening areas K. In the first direction X, one light-emitting portion 11 corresponds to one opening area K; the first direction X is the direction in which the light-emitting unit 10 and the color conversion unit 20 are stacked.

[0348] The light-disturbing portion 17 is embedded in the second semiconductor layer 15. In the orthographic projection onto the reference plane A3, the light-disturbing portion 17 surrounds the light-emitting layer 14 and is located within the range defined by the dam layer 21. The reference plane A3 is the plane where the surface of the color conversion unit 20 away from the light-emitting unit 10 is located.

[0349] By disposing the light-disturbing portion 17 embedded in the second semiconductor layer 15 , the optical path of the light emitted by the light-emitting layer 14 , which propagates along the inside of the second semiconductor layer 15 and is emitted from the side surface B1 of the second semiconductor layer 15 , is disrupted.

[0350] In some embodiments, as shown in FIG61 , the light disturbing portion 17 is disposed close to the boundary of the opening area K.

[0351] That is, the light disturbing portion 17 is provided close to the boundary of the opening area K in the orthographic projection onto the reference plane A3 .

[0352] In some embodiments, as shown in FIG62 , the light disturbing portion 17 is disposed close to a center line T defining the dam layer 21 between two adjacent opening areas K.

[0353] That is, in the orthographic projection onto the reference plane A3 , the light disrupting portion 17 is disposed close to the center line T of the dam layer 21 between two adjacent opening areas K. Furthermore, the light disrupting portion 17 is also disposed at the center line T of the dam layer 21 in the edge region of the light emitting chip 100 .

[0354] 61 and 62 , the light disturbing portion 17 penetrates the second semiconductor layer 15 along a direction perpendicular to the reference plane A3 .

[0355] It should be noted that the direction perpendicular to the reference plane A3 is parallel to the first direction X. Along the first direction X, the light disturbing portion 17 penetrates the second semiconductor layer 15 .

[0356] It can be understood that the light-disturbing portion 17 is arranged in a ring shape in the second semiconductor layer 15, and is used to block the light propagating along the inside of the second semiconductor layer 15, change the optical path of the light propagating along the inside of the second semiconductor layer 15, increase the emission rate of the light along the first surface A1 of the second semiconductor layer 15, and block light leakage at the side surface B1 of the second semiconductor layer 15.

[0357] As shown in Figures 61 and 62, the light-emitting unit 10 also includes a first common electrode layer 16a, the first common electrode layer 16a includes a first portion S17c belonging to the common electrode layer 16, and also includes a first light-reflecting pattern 40 spaced apart from the light-emitting portion 11. The material of the light-disturbance portion 17 is the same as that of the first common electrode layer 16a, and the light-disturbance portion 17 is integrally arranged with either the common electrode layer 16 or the first light-reflecting pattern 40.

[0358] When the light-disturbing portion 17 is connected to the common electrode layer 16 , the light-disturbing portion 17 and the first portion S17 c of the common electrode layer 16 are an integrated structure.

[0359] 61 and 62 , the light disturbing portion 17 is integrally provided with the first light reflecting pattern 40 or the first portion S17 c of the common electrode layer 16 , that is, the material of the light disturbing portion 17 is the same as that of the first common electrode layer 16 a .

[0360] For example, when preparing the initial light-emitting unit 120, when patterning the initial n-type gallium nitride layer 1560 and the initial gallium nitride buffer layer 1550 in step S102 (as shown in FIG9 ), the material in the region to be penetrated by the light-disturbing portion 17 is removed to form the second semiconductor layer 15. When forming the first common electrode layer 16a in step S104, the first portion S17c of the common electrode layer 16 and the first light-reflecting pattern 40 are simultaneously formed, as well as the light-disturbing portion 17 embedded in the second semiconductor layer 15.

[0361] Another embodiment of disposing the light-disturbing portion 17 is provided below.

[0362] In some embodiments, as shown in Figures 63 and 64, the second semiconductor layer 15 is provided with a groove 33. The opening of the groove 33 is located on the first surface A1 of the second semiconductor layer 15. In an orthographic projection onto a reference plane A3, the groove 33 is located within the range defining the dam layer 21. The light-disturbing portion 17 includes a metal layer 34 covering the bottom and inner wall of the groove 33, and / or scattering particles filled in the groove 33. The reference plane A3 is the plane where the surface of the color conversion unit 20 away from the light-emitting unit 10 is located.

[0363] It can be understood that the groove 33 of the second semiconductor layer 15 is arranged in a ring shape, and the metal layer 34 can reflect the light propagating along the inside of the second semiconductor layer 15, increase the light emission rate at the first surface A1 of the second semiconductor layer 15, and block light leakage at the side surface B1 of the second semiconductor layer 15.

[0364] Exemplarily, as shown in FIG63 , the material of the metal layer 34 in the groove 33 includes lithium, gold or silver.

[0365] For example, as shown in FIG64 , the scattering particles are made of titanium dioxide. The size of the scattering particles ranges from 10 nm to 1000 nm. For example, the size of the scattering particles is 10 nm, 50 nm, 100 nm, 200 nm, 500 nm, 750 nm, or 1000 nm, etc., without limitation.

[0366] Scattering particles are arranged in the grooves 33 of the second semiconductor layer 15. The refractive index at the interface between the scattering particles and the second semiconductor layer 15 is uneven, which causes light scattering. Large-angle light can be scattered into small-angle light, thereby avoiding total reflection.

[0367] Illustratively, when preparing the initial light-emitting unit 120, after removing the second substrate 91 in step S108 (as shown in FIG9 ), the second semiconductor layer 15 is patterned (including a stack of an n-type gallium nitride layer 156 and a gallium nitride buffer layer 155, or a gallium nitride buffer layer 155; in the absence of the gallium nitride buffer layer 155, the second semiconductor layer 15 may be an n-type gallium nitride layer 156) to form a groove 33, and then a metal layer 34 is formed in the groove 33 by a patterning process or scattering particles are formed in the groove 33 to obtain a light-disturbing portion 17.

[0368] Another embodiment of disposing the light-disturbing portion 17 is provided below.

[0369] In some embodiments, as shown in FIG65 , the end of the dam layer 21 near the light-emitting unit 10 is defined to extend into the second semiconductor layer 15 along a direction perpendicular to the reference plane A3. The dam layer 21 extending into the second semiconductor layer 15 serves as the light-disturbing portion 17. The reference plane A3 is the plane where the surface of the color conversion unit 20 away from the light-emitting unit 10 is located.

[0370] That is to say, the limiting dam layer 21 passes through the adhesive layer 41 and extends into the second semiconductor layer 15. The limiting dam layer 21 that passes through the second semiconductor layer 15 can block the light propagating along the inside of the second semiconductor layer 15, change the optical path of the light propagating along the inside of the second semiconductor layer 15, and block the light leakage at the side B1 of the second semiconductor layer 15.

[0371] In some embodiments, as shown in FIG66 , the first surface A1 of the second semiconductor layer 15 has a recess 53 adapted to the shape of the end portion of the dam layer 21 close to the light-emitting unit 10 , and the end portion 21B of the dam layer 21 close to the light-emitting unit 10 extends into the recess 53 .

[0372] As shown in FIG66 , the end 21B of the dam layer 21 extending into the recess 53 close to the light emitting unit 10 can block the light propagating along the inside of the second semiconductor layer 15 and change the optical path of the light propagating along the inside of the second semiconductor layer 15 .

[0373] As shown in FIG65 , the light-emitting chip 100 further includes an adhesive layer 41 for connecting the light-emitting unit 10 and the color conversion unit 20. The color conversion unit 20 further includes an optically functional portion 22 disposed within the opening region K of the definition dam layer 21, and an encapsulation layer 26 for encapsulating the optically functional portion 22 and the definition dam layer 21. An end 21B of the definition dam layer 21 proximal to the light-emitting unit 10 extends through the adhesive layer 41, while a portion of the encapsulation layer 26 extends into the recess 53 and encapsulates the end 21B of the definition dam layer 21 that extends into the recess 53.

[0374] Exemplarily, during the preparation of the initial light-emitting unit 120, after removing the second substrate 91 in step S108 (as shown in FIG9 ), a recess 53 is formed on the first surface A1 of the second semiconductor layer 15 using a photolithography process. An adhesive forming the bonding layer 41 is then applied to the first surface A1 of the second semiconductor layer 15. The light-emitting unit 10 and the color conversion unit 20 are then aligned, forming a structure that defines the end 21B of the dam layer 21 proximal to the light-emitting unit 10 and extending into the recess 53 of the second semiconductor layer 15. The temporary substrate 70 is then peeled off, forming the light-emitting chip 100.

[0375] By wrapping the end portion 21B of the dam layer 21 extending into the recess 53 with the encapsulation layer 26 , light leakage of the optical functional portion 22 in the end portion 21B of the dam layer 21 can be effectively prevented, thereby improving the encapsulation effect.

[0376] Another embodiment of disposing the light-disturbing portion 17 is provided below.

[0377] In some embodiments, as shown in FIG67 , the second semiconductor layer 15 includes a plurality of semiconductor portions 15A spaced apart from each other, and in orthographic projection onto a reference plane A3, one semiconductor portion 15A covers at least one light-emitting portion 11. The light-disturbing portion 17 includes a light-extraction structure disposed on the first surface A1 of the second semiconductor layer 15. The reference plane A3 is the plane where the surface of the color conversion unit 20 away from the light-emitting unit 10 is located.

[0378] Exemplarily, as shown in FIG67 , the light extraction structure includes a plurality of protrusions 35 arranged in an array, and the protrusions 35 are triangular or trapezoidal.

[0379] That is, the entire second semiconductor layer 15 is discontinuously disposed, breaking the optical waveguide created by the entire second semiconductor layer 15. Furthermore, as shown in FIG67 , all surfaces of the second semiconductor layer 15 except the first surface A1 are covered with the first common electrode layer 16 a to block light leakage from the sides of the second semiconductor layer 15.

[0380] By disposing the plurality of protrusions 35 , the waveguide interface of the second semiconductor layer 15 is broken, and the light previously locked in the waveguide can propagate upward, thereby increasing the light extraction efficiency of the light emitting chip 100 .

[0381] For example, as shown in FIG67 , the light extraction structure can be disposed throughout the entire plane of the first surface A1 of the second semiconductor layer 15. That is, the light extraction structure is also located in the region between adjacent semiconductor portions 15A. This entire layer of light extraction structure does not require patterning, facilitating its fabrication.

[0382] In some examples, as shown in FIG68 , each of the plurality of protrusions 35 is triangular or trapezoidal, and the base angle θ of the protrusion 35 is 50.9°. The base angle θ of the protrusion 35 is the angle between the protrusion 35 and the first surface A1 of the second semiconductor layer 15 .

[0383] For example, the structure of the protrusion 35 shown in FIG68 is a triangle, for example, the base diameter d22 of the triangle is 2.6 μm, and the height d23 of the triangle is 1.6 μm.

[0384] Exemplarily, the light extraction structure is prepared by a photolithography process.

[0385] For example, as shown in FIG. 68 , the shortest distance d21 between every two adjacent protrusions 35 of the plurality of protrusions 35 in the second direction Y is 3 μm, and the second direction Y is perpendicular to the first direction X.

[0386] The light extraction structure expands the range of light rays L1 (as shown in FIG. 47 ) that originally propagate upward into the color conversion unit 20, from less than 39.5° (as shown in FIG. 47 ), to all light rays greater than 11.4°, thereby increasing the range of emission angles and enhancing the light utilization efficiency of the light-emitting chip 100. Furthermore, by discontinuing the entire second semiconductor layer 15 and combining it with the light extraction structure, crosstalk between the pixels of the multiple light-emitting sections 11 can be blocked, reducing the risk of color shift.

[0387] Another embodiment of disposing the light-disturbing portion 17 is provided below.

[0388] In some embodiments, as shown in FIG69 , the light-emitting portion 11 further includes a first electrode 12 and a common electrode layer 16 electrically connected to the light-emitting layer 14, and disposed on the second surface A2 of the second semiconductor layer 15. The light-disturbing portion 17 includes a raised ring 36 disposed on the second surface A2 of the second semiconductor layer 15. In an orthographic projection onto a reference plane A3, the raised ring 36 surrounds the first electrode 12 and the common electrode layer 16. The reference plane A3 is the plane where the surface of the color conversion unit 20 away from the light-emitting unit 10 is located.

[0389] Exemplarily, the raised ring 36 and the second semiconductor layer 15 are an integral structure.

[0390] The raised ring 36 and the second semiconductor layer 15 are an integral structure, that is, the second semiconductor layer 15 is provided with different film thicknesses.

[0391] For example, when preparing the initial light-emitting unit 120, in step S101 (as shown in FIG9 ), first, an initial gallium nitride buffer layer 1550 and an initial n-type gallium nitride layer 1560 are sequentially formed on one side of the second substrate 91. The initial gallium nitride buffer layer 1550 and the initial n-type gallium nitride layer 1560 are then patterned. The n-type gallium nitride layer 156 and the gallium nitride buffer layer 155 provided in the region where the first electrode 12 and the common electrode layer 16 are pre-formed are relatively thin. Then, the initial quantum well layer 1210 and the initial p-type gallium nitride layer 1220 are deposited. The other steps of preparing the initial light-emitting unit 120 can be referred to above and will not be repeated here.

[0392] By setting different thicknesses in different regions of the second semiconductor layer 15 , the optical waveguide effect of the second semiconductor layer 15 can be effectively weakened, and light leakage at the side surface B1 of the second semiconductor layer 15 can be reduced.

[0393] Another embodiment of disposing the light-disturbing portion 17 is provided below.

[0394] In some embodiments, as shown in FIG70 , the light-disturbing portion 17 includes multiple rows of grating strips 37 spaced apart on the first surface A1 of the second semiconductor layer 15. In an orthographic projection onto a reference plane A3, the multiple rows of grating strips 37 surround the light-emitting layer 14. The reference plane A3 is the plane where the surface of the color conversion unit 20 away from the light-emitting unit 10 is located.

[0395] That is, the grating strips 37 are provided in the surrounding areas of the plurality of light emitting portions 11 .

[0396] Exemplarily, the material of the grating strips 37 includes silicon oxide, titanium oxide or silicon nitride.

[0397] For example, as shown in FIG71 , the width d24 of the grating stripes 37 ranges from 50 nm to 500 nm. The spacing d25 between adjacent grating stripes 37 ranges from 50 nm to 1000 nm. For example, the width d24 of the grating stripes 37 is 50 nm, 100 nm, 150 nm, 200 nm, 250 nm, or 500 nm, etc., without limitation. The spacing d25 between adjacent grating stripes 37 is 50 nm, 100 nm, 200 nm, 300 nm, 800 nm, or 1000 nm, etc., without limitation.

[0398] The grating strips 37 provided on the first surface A1 of the second semiconductor layer 15 can diffract the light so that the light cannot be totally reflected in the second semiconductor layer 15 , thereby improving the light emission rate from the first surface A1 of the second semiconductor layer 15 .

[0399] For example, when preparing the initial light-emitting unit 120, after removing the second substrate 91 in step S108 (as shown in FIG9 ), the grating strips 37 are formed on the first surface A1 of the second semiconductor layer 15 by a patterning process. The other steps of preparing the initial light-emitting unit 120 can be referred to above and will not be repeated here.

[0400] Another embodiment of disposing the light-disturbing portion 17 is provided below.

[0401] 72 , the light emitting chip 100 further includes an adhesive layer 41 disposed between the light emitting unit 10 and the color conversion unit 20 for connecting the light emitting unit 10 and the color conversion unit 20. The light disturbing portion 17 includes scattering particles dispersed in the adhesive layer 41.

[0402] Exemplarily, the material of the scattering particles includes titanium dioxide. The size of the scattering particles ranges from 10 nm to 1000 nm. For example, the size of the scattering particles is 10 nm, 50 nm, 100 nm, 200 nm, 500 nm, 750 nm, or 1000 nm, etc., without limitation.

[0403] By dispersing scattering particles in the bonding layer 41 , the refractive index at the interface between the second semiconductor layer 15 and the bonding layer 41 is non-uniform, thereby causing light scattering and effectively avoiding total reflection at the interface between the second semiconductor layer 15 and the bonding layer 41 .

[0404] For example, after forming the initial light-emitting unit 120 and the color conversion unit 20, when the color conversion unit 20 and the initial light-emitting unit 120 are assembled together via the adhesive layer 41 formed by the adhesive layer 133, in step P301 (as shown in FIG. 37 ), when the adhesive layer 133 is applied to the side of the initial light-emitting unit 120 away from the temporary substrate 70, scattering particles are dispersed in the adhesive layer 133, forming scattering particles dispersed in the adhesive layer 41, thereby obtaining the light-disturbing portion 17. Regarding the steps for preparing the initial light-emitting unit 120 and the color conversion unit 20, as well as other steps for assembling the color conversion unit 20 and the initial light-emitting unit 120, reference can be made to the above content and will not be repeated here.

[0405] Another embodiment of disposing the light-disturbing portion 17 is provided below.

[0406] In some embodiments, as shown in FIG73 , the light-emitting chip 100 further includes an adhesive layer 41 disposed between the light-emitting unit 10 and the color conversion unit 20 for connecting the light-emitting unit 10 and the color conversion unit 20. The light-disturbing portion 17 includes a plurality of light-guiding films 38 stacked sequentially on a side of the adhesive layer 41 near the light-emitting unit 10. The refractive index of the plurality of light-guiding films 38 decreases sequentially along the first direction X from the light-emitting unit 10 toward the color conversion unit 20.

[0407] Since the refractive index difference between the second semiconductor layer 15 and the adhesive layer 41 is large, light propagates laterally in the second semiconductor layer 15 to form an optical waveguide. Therefore, the multi-layer light guide film 38 with a gradient refractive index destroys the optical waveguide effect of the second semiconductor layer 15 .

[0408] For example, when preparing the initial light-emitting unit 120, after removing the second substrate 91 in step S108 (as shown in FIG9 ), a multilayer light-guiding film 38 is formed on the first surface A1 of the second semiconductor layer 15 by a patterning process. The other steps of preparing the initial light-emitting unit 120 can be referred to above and will not be repeated here.

[0409] The following describes the design principle of the refractive index of the light guide film 38.

[0410] As shown in Figure 74, the first normal f1 is divided into a first normal f11 and a second normal f12. The normal at the side surface B1 of the second semiconductor layer 15 is the first normal f11, and the normal at the first surface A1 and the second surface A2 of the second semiconductor layer 15 is the second normal f12. It can be understood that the second normal f12 is parallel to the first direction X.

[0411] The above analysis of light leakage W1 (as shown in FIG47 ) and light leakage W2 (as shown in FIG48 ) indicates that the critical angle α2 for total internal reflection between the second semiconductor layer 15 and air is 24°. In other words, at the side surface B1 of the second semiconductor layer 15 , light emitting at an angle less than 24° with the first normal f11 forms light L3 (as shown in FIG47 ). Light leakage caused by light L3 can cause color shift.

[0412] As shown in FIG74 , the cross section of the second semiconductor layer 15 is trapezoidal, that is, the side surface B1 of the second semiconductor layer 15 forms an angle γ with the first direction X. For example, the angle γ is 75°.

[0413] As shown in FIG74 , on the first surface A1 of the second semiconductor layer 15, the angle between light ray L4 and the second normal f12 is 51°. After reflection from the first surface A1 of the second semiconductor layer 15, light ray L4 forms a light ray with an angle of 24° with the first normal f11 of the side surface B1 of the second semiconductor layer 15. On the first surface A1 of the second semiconductor layer 15, light ray with an angle greater than or equal to 51° with the second normal f12 forms a light ray with an angle less than or equal to 24° with the first normal f11 of the side surface B1 of the second semiconductor layer 15 after reflection from the first surface A1 of the second semiconductor layer 15. This light ray then emerges from the side surface B1 of the second semiconductor layer 15 as light ray L3 (as shown in FIG47 ). Therefore, on the first surface A1 of the second semiconductor layer 15, light ray with an angle greater than or equal to 51° with the second normal f12 emerges from the side surface B1 of the second semiconductor layer 15 after reflection from the first surface A1 of the second semiconductor layer 15.

[0414] As shown in FIG74 , on the second surface A2 of the second semiconductor layer 15, the angle between the light ray L5 and the second normal f12 is 81°. After being reflected by the second surface A2 of the second semiconductor layer 15, the light ray L5 forms a light ray with an angle of 24° with the first normal f11 of the side surface B1 of the second semiconductor layer 15. On the second surface A2 of the second semiconductor layer 15, the light ray with an angle greater than or equal to 81° with the second normal f12 forms a light ray with an angle less than or equal to 24° with the first normal f11 of the side surface B1 of the second semiconductor layer 15 after being reflected by the second surface A2 of the second semiconductor layer 15. This light ray emerges from the side surface B1 of the second semiconductor layer 15 as the light ray L3 (as shown in FIG47 ).

[0415] Therefore, it can be seen from the path diagram of light L4 and light L5 shown in Figure 74 and the data in Table 1 that the light in the second semiconductor layer 15 with an angle of 51° to 81° to the first direction X will be emitted from the side B1 of the second semiconductor layer 15, and the angle δ of emission in the air is 15° to 195°, that is, there is a 180° fan-shaped light-emitting surface at the side B1 of the second semiconductor layer 15.

[0416] The data in Table 1 shows the light leakage ratio of the second semiconductor layer 15 at an angle of 51° to 85° with the first direction X. Δx and Δy are color table deviation values. To prevent color shift caused by light leakage, the color coordinates are calculated based on completely blocking all light that can escape from the air. Δx and Δy for the blocked portion are calculated with a standard of Δx ≤ 0.05 and Δy ≤ 0.05.

[0417] It can be seen from the light leakage ratio that light in the second semiconductor layer 15 with an angle of 85° to the first direction X also leaks. In other words, light leakage will still occur even if only the light in the second semiconductor layer 15 with an angle of 51° to 81° to the first direction X is blocked. Therefore, it is necessary to block the light in the second semiconductor layer 15 with an angle of less than 85° to the first direction X.

[0418] Table 1 Calculation of shading angle and color shift of the second semiconductor layer

[0419] According to the calculation of the critical angle of adjacent interfaces: 2.45×sin85°=n2×sin90°→n2=2.44067, 2.44067×sin85°=n3×sin90°→n3=2.43147, 2.43147×sin85°=n4×sin90°→n4=2.4221, and so on, the difference in refractive index between the two adjacent layers of light-guiding film 38 needs to reach 0.01 to meet the purpose of all light within 85° propagating upward, thereby solving the problem of light leakage on the sidewall of the optical waveguide of the second semiconductor layer 15.

[0420] Therefore, in the multi-layer light guide film 38 , the difference in refractive index between every two adjacent layers of light guide film 38 is greater than or equal to 0.01.

[0421] According to calculation, (2.45-1.56)=0.89 / 0.01=89 layers. Therefore, 89 layers of light guide film 38 with varying refractive index are required to achieve a gradual change in refractive index from 2.45 to 1.56 without color deviation or light leakage.

[0422] In some examples, as shown in FIG. 73 , the thickness of each layer of multilayer light guiding film 38 is in a range of 20 nm to 50 nm, and the sum d26 of the thickness of the multilayer light guiding film 38 is in a range of 2 μm to 4 μm.

[0423] For example, the thickness of each layer of the light guide film 38 is 20 nm, 30 nm, 35 nm, 40 nm, 45 nm, or 50 nm, etc., which is not limited here.

[0424] For example, the sum d6 of the thickness of the multi-layer light guide film 38 is 2 μm, 3 μm, or 4 μm, etc., which is not limited here.

[0425] In some examples, the material of light guide film 38 includes silicon dioxide.

[0426] It should be noted that the refractive index of the light-guiding film 38 changes with the change of porosity. The larger the porosity, the smaller the refractive index. Therefore, as long as the porosity of the light-guiding film 38 can be controlled to change linearly, the refractive index will gradually change, thereby preparing a gradient refractive index light-guiding film 38.

[0427] For example, polyethylene glycol molecules are added to an acid-catalyzed sol, and the water-soluble nature of polyethylene glycol is utilized to prepare a refractive index gradient light-guiding film 38. In the silica sol, the polyethylene glycol exists in the form of simple physical dissolution. When the film layer is immersed in water, the exterior of the film layer is in full contact with the water, and the polyethylene glycol in the film layer is fully dissolved and precipitated. The further into the film layer, the narrower the channel for polyethylene glycol dissolution and precipitation, and the smaller the pores left after precipitation. This results in a gradient refractive index silica silica material with gradually increasing porosity and decreasing refractive index from the inside out. Silicas with different refractive indices are obtained layer by layer, and a multilayer refractive index gradient polyethylene glycol layer is produced using a TFE (thin film encapsulation)-CVD (chemical vapor deposition) process.

[0428] In related art, as shown in Figure 75 , the refractive index of air is 1.0, and the refractive index of the first substrate 30 is 1.5. Due to the significant difference in refractive index between the first substrate 30 and air, total internal reflection occurs at the interface between the first substrate 30 and air. The normal perpendicular to the first substrate 30 is called the second normal f2. Light rays that are at an angle less than the critical angle α3 with the second normal f2 are emitted from the first substrate 30 into the air. Light rays that are at an angle greater than or equal to the critical angle α3 with the second normal f2 are totally internally reflected within the first substrate 30.

[0429] It should be noted that the critical angle α3 for total reflection between the first substrate 30 and the air is calculated as follows: sinα3×1.5=sin90°×1.0

[0430] Therefore, α3 is 41.8°.

[0431] That is, as shown in Figure 75, the light whose angle with the second normal f2 is less than 41.8° is emitted from the first substrate 30 into the air, and the light whose angle with the second normal f2 is greater than or equal to 41.8° is totally reflected in the first substrate 30, forming light leakage W3 at the edge of the first substrate 30.

[0432] Due to the influence of the light leakage W1 (as shown in FIG47 ), light leakage W2 (as shown in FIG48 ), and light leakage W3, the light extraction efficiency of the display substrate 200 is reduced, and the display effect of the display substrate 200 is degraded. The following embodiments are provided to improve the light leakage problem at the edge of the first substrate 30 .

[0433] In some embodiments, as shown in Figures 76 and 77, the light-emitting chip 100 further includes a first substrate 30, which is disposed on a side of the color conversion unit 20 away from the light-emitting unit 10. The first substrate 30 includes a first portion E1 and a second portion E2 surrounding the first portion E1. The first portion E1 overlaps with the color conversion unit 20, and the second portion E2 does not overlap with the color conversion unit 20. The light-emitting chip 100 further includes a light-blocking portion 90 disposed on a surface of the second portion E2 that is close to the color conversion unit 20 or on a surface that is away from the color conversion unit 20.

[0434] It should be noted that, as shown in FIG8 , the wafer 300 includes a plurality of light-emitting chips 100 arranged in an array, and individual light-emitting chips 100 are formed by cutting the wafer 300. Therefore, a dicing line J is provided on the first substrate 30 of the wafer 300. The dicing line J is located between the light-emitting chips 100 arranged in the array, and the light-emitting chips 100 are formed by cutting the first substrate 30 at the dicing line J. It is understood that the second portion E2 of the first substrate 30 partially overlaps with the dicing line J of the first substrate 30.

[0435] By providing a light blocking portion 90 on the first substrate 30 in the second portion E2 , the leaked light W1 , the leaked light W2 , and the leaked light W3 can be absorbed or reflected, thereby improving the light leakage problem on the side surface B2 of the first substrate 30 .

[0436] In some examples, as shown in FIG. 76 , a light blocking portion 90 is disposed on a surface of the second portion E2 close to the color conversion unit 20 . The light blocking portion 90 is made of metal and is configured to reflect light emitted along the side surface B1 of the second semiconductor layer 15 .

[0437] Exemplarily, the light blocking portion 90 is formed by deposition.

[0438] Illustratively, when preparing the color conversion unit 20 , after forming the encapsulation layer 26 in step R203 (as shown in FIG. 26 ), a light blocking portion 90 is formed on one side of the cutting street J region of the initial first substrate 310 near the optical functional portion 22 by a patterning process.

[0439] As shown in Figures 47, 48 and 76, a light blocking portion 90 is provided on the surface of the second part E2 of the first substrate 30 close to the color conversion unit 20. The light blocking portion 90 blocks the leakage light W1 and the leakage light W2, and reflects the light L3 back into the interior of the light-emitting chip 100, so that the light can only be emitted through the color conversion unit 20, thereby improving the light extraction rate of the light-emitting chip 100.

[0440] In some examples, as shown in FIG. 77 , the light blocking portion 90 is disposed on a surface of the first substrate 30 away from the color conversion unit 20 .

[0441] Exemplarily, after the initial light-emitting unit 120 and the color conversion unit 20 are formed, the color conversion unit 20 and the initial light-emitting unit 120 are aligned with each other through the adhesive layer 41 formed by the adhesive layer 133. In the step of forming the light-emitting chip 100, after the initial first substrate 310 is thinned in step P304 (as shown in Figure 36) to form the first substrate 30, a light-blocking portion 90 is formed on the side of the cutting road J area of ​​the first substrate 30 away from the optical functional portion 22 through a patterning process.

[0442] The material of the light-blocking portion 90 includes: black resin, amorphous silicon or titanium dioxide, which is used to absorb light emitted from the second portion E2 along the side of the second semiconductor layer 15, and to absorb light emitted from the light-emitting layer 14 that propagates along the inside of the first substrate 30 and is emitted from the side B2 of the first substrate 30.

[0443] Therefore, black resin, amorphous silicon and titanium dioxide are light-absorbing materials. Setting the light-absorbing materials around the second portion E2 can absorb the leakage light W1, the leakage light W2 and the leakage light W3, thereby improving the light extraction efficiency of the display substrate 200 and improving the display effect of the display substrate 200.

[0444] The above description is merely a specific embodiment of the present disclosure, but the scope of protection of the present disclosure is not limited thereto. Any changes or substitutions that a person skilled in the art can conceive within the technical scope disclosed in the present disclosure should be included within the scope of protection of the present disclosure. Therefore, the scope of protection of the present disclosure should be based on the scope of protection of the claims.

Claims

1. A light-emitting chip, comprising: a light-emitting unit and a color conversion unit disposed on the light-emitting side of the light-emitting unit; wherein, the light-emitting unit includes a plurality of light-emitting portions, and each light-emitting portion of the plurality of light-emitting portions includes a first electrode, a first semiconductor layer, and a light-emitting layer stacked along a first direction; the light-emitting unit further includes a second semiconductor layer and a common electrode layer, the second semiconductor layer is disposed on the light-emitting side of the plurality of light-emitting portions, the second semiconductor layer includes a connecting portion and an auxiliary portion, the connecting portion is connected to the light-emitting portion, at least a part of the auxiliary portion is located between adjacent connecting portions, the connecting portion and the auxiliary portion are an integral structure, and the common electrode layer is connected to the auxiliary portion; the second semiconductor layer includes a first surface facing the color conversion unit, a second surface facing away from the color conversion unit, and a side surface located between and connecting the first surface and the second surface, the light-emitting chip further includes a light-scattering portion, the light-scattering portion is located at the periphery and / or inside of the second semiconductor layer; wherein, the first direction is the direction in which the light-emitting unit and the color conversion unit are stacked.

2. The light-emitting chip according to claim 1, wherein, the light-scattering portion covers the side surface of the second semiconductor layer.

3. The light-emitting chip according to claim 2, wherein, the light-emitting portion further includes a first electrode electrically connected to the light-emitting layer, disposed on a side of the light-emitting layer away from the color conversion unit.

4. The light-emitting chip according to claim 2, wherein, the material of the light-scattering portion includes at least one of a metal material, a semiconductor material, and a black resin.

5. The light-emitting chip according to claim 2, wherein, the light-scattering portion includes a nanosphere material.

6. The light-emitting chip according to any one of claims 2 to 5, wherein, the light-scattering portion includes a conductive material; the light-emitting unit further includes: a first insulating layer disposed between the light-scattering portion and the side surface of the second semiconductor layer; and / or, a second insulating layer disposed on a side of the light-scattering portion away from the second semiconductor layer.

7. The light-emitting chip according to claim 6, wherein, the thickness range of the first insulating layer is 0.2 μm to 0.5 μm; the thickness range of the second insulating layer is 0.2 μm to 0.5 μm.

8. The light-emitting chip according to any one of claims 2 to 7, wherein, the light-emitting unit further includes a first common electrode layer, disposed on a side of the second semiconductor layer away from the color conversion unit; the first common electrode layer includes a first part belonging to the common electrode layer, and further includes a first reflective pattern spaced from the light-emitting portion; the light-emitting unit further includes a second reflective pattern, disposed in an area between the light-emitting portion and the common electrode layer and an area between the first reflective pattern and the light-emitting portion, and covering the side surfaces of the first reflective pattern, the light-emitting portion, and the common electrode layer.

9. The light-emitting chip according to claim 1, wherein, The color conversion unit includes: a defining dam layer that defines a plurality of opening regions, and in a first direction, one of the light emitting portions corresponds to one of the opening regions; The light scattering portion is embedded in the second semiconductor layer. In a front projection onto a reference plane, the light scattering portion is disposed around the light emitting layer and within the range of the defining dam layer; the reference plane is a plane where the surface of the color conversion unit away from the light emitting unit is located.

10. The light emitting chip according to claim 9, wherein, the light scattering portion is disposed near the boundary of the opening region; or, the light scattering portion is disposed near the midline of the defining dam layer between two adjacent opening regions.

11. The light emitting chip according to claim 9 or 10, wherein, in a direction perpendicular to the reference plane, the light scattering portion penetrates through the second semiconductor layer.

12. The light emitting chip according to claim 10 or 11, wherein, the light emitting unit further includes a first common electrode layer, the first common electrode layer includes a first portion belonging to the common electrode layer, and further includes a first reflective pattern spaced apart from the light emitting portion; the material of the light scattering portion is the same as the material of the first common electrode layer, and the light scattering portion is integrally provided with any one of the common electrode layer and the first reflective pattern.

13. The light emitting chip according to claim 9, wherein, the second semiconductor layer is provided with a groove, and an opening of the groove is located on a first surface of the second semiconductor layer; in a front projection onto the reference plane, the groove is within the range of the defining dam layer; the light scattering portion includes a metal layer covering a bottom and an inner wall of the groove, and / or scattering particles filled in the groove.

14. The light emitting chip according to claim 13, wherein, the material of the metal layer includes at least one of lithium, gold, and silver; the material of the scattering particles includes titanium dioxide.

15. The light emitting chip according to claim 9, wherein, in a direction perpendicular to the reference plane, an end portion of the defining dam layer close to the light emitting unit extends into the second semiconductor layer, and the defining dam layer extending into the second semiconductor layer is reused as the light scattering portion.

16. The light emitting chip according to claim 15, wherein, the first surface of the second semiconductor layer has a recess adapted to the shape of the end portion of the defining dam layer close to the light emitting unit, and the end portion of the defining dam layer close to the light emitting unit extends into the recess; the light emitting chip further includes an adhesive layer for connecting the light emitting unit and the color conversion unit; the color conversion unit further includes an optical functional portion disposed in the opening region of the defining dam layer, and a packaging layer for packaging the optical functional portion and the defining dam layer; the end portion of the defining dam layer close to the light emitting unit penetrates through the adhesive layer, a part of the packaging layer extends into the recess, and wraps the end portion of the defining dam layer extending into the recess.

17. The light emitting chip according to claim 9, wherein, the second semiconductor layer includes a plurality of semiconductor portions disposed at intervals, and in a front projection onto the reference plane, one of the semiconductor portions covers at least one of the light emitting portions; The light-scattering part includes a light-extracting structure disposed on the first surface of the second semiconductor layer.

18. The light-emitting chip according to claim 17, wherein, the light-extracting structure includes a plurality of protrusions arranged in an array, and the protrusions are triangular prisms or trapezoidal prisms.

19. The light-emitting chip according to claim 1, wherein, the light-emitting part further includes a first electrode and a common electrode layer electrically connected to the light-emitting layer, and is disposed on the second surface of the second semiconductor layer; the light-scattering part includes a raised ring disposed on the second surface of the second semiconductor layer, and in the orthographic projection onto the reference plane, the raised ring surrounds the first electrode and the common electrode layer.

20. The light-emitting chip according to claim 19, wherein, the raised ring and the second semiconductor layer are of an integral structure.

21. The light-emitting chip according to claim 1, wherein, the light-scattering part includes: a plurality of rows of grating bars spaced apart on the first surface of the second semiconductor layer, and in the orthographic projection onto the reference plane, the plurality of rows of grating bars surround the light-emitting layer.

22. The light-emitting chip according to claim 1, further including: an adhesive layer disposed between the light-emitting unit and the color conversion unit for connecting the light-emitting unit and the color conversion unit; the light-scattering part includes: scattering particles dispersed in the adhesive layer.

23. The light-emitting chip according to claim 22, wherein, the material of the scattering particles includes titanium dioxide.

24. The light-emitting chip according to claim 1, wherein, further includes: an adhesive layer disposed between the light-emitting unit and the color conversion unit for connecting the light-emitting unit and the color conversion unit; the light-scattering part includes: a plurality of layers of light guide films stacked in sequence on the side of the adhesive layer close to the light-emitting unit, and along a first direction and from the light-emitting unit to the color conversion unit, the refractive indices of the plurality of layers of light guide films decrease in sequence.

25. The light-emitting chip according to claim 24, wherein, in the plurality of layers of light guide films, the difference in refractive index between every two adjacent layers of light guide films is greater than or equal to 0.

01.

26. The light-emitting chip according to any one of claims 1 to 25, further including: a substrate disposed on the side of the color conversion unit away from the light-emitting unit; the substrate includes a first part and a second part surrounding the first part, the first part overlaps with the color conversion unit, and the second part does not overlap with the color conversion unit; a light-blocking part disposed on the surface of the second part close to the color conversion unit or on the surface away from the color conversion unit.

27. The light-emitting chip according to claim 26, wherein, the material of the light-blocking part includes a metal material, a black resin, amorphous silicon or titanium dioxide.

28. A display substrate, including: the light-emitting chip according to any one of claims 1 to 27; a driving circuit layer for driving the light-emitting chip to emit light.

29. A display device, including: the display substrate according to claim 28; a control circuit for providing an electrical signal to the display substrate.

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