System for manufacturing electrical contacts and associated manufacturing method

Abstract

A system and method for manufacturing electrical contacts and electronic gate contacts, wherein the system comprises a main chamber; a support situated in the main chamber and intended to hold the manufacturing material; an ion column, situated in the main chamber, perpendicular to the support, and intended to irradiate the manufacturing material with an ion beam; and an electron column, situated in the main chamber, parallel to the ion column, and intended to irradiate the manufacturing material with an electron beam. The manufacturing system and method can be used to obtain electrical contacts or electronic gate contacts in the main chamber through the combined use of ion and electron irradiation applied to an organometallic film.

Description

[0001] ELECTRICAL CONTACT MANUFACTURING SYSTEM AND ASSOCIATED MANUFACTURING METHOD

[0002] OBJECT OF THE INVENTION

[0003] The present invention falls within the area of ​​manufacturing electrical contacts and electronic door contacts.

[0004] The invention relates to a manufacturing system for electrical contacts and electronic door contacts, as well as to a manufacturing method for electrical contacts and electronic door contacts that makes use of said manufacturing system.

[0005] Both the system and the method of the invention allow for the implementation of two highly important applications in nanoelectronics in a single system and procedure: the manufacturing of metal contacts and the manufacturing of electronic gate contacts. Furthermore, they allow for reduced manufacturing costs and automated processes, increasing their simplicity.

[0006] BACKGROUND OF THE INVENTION

[0007] There are numerous devices and systems in the state of the art for the manufacture of electrical contacts and electronic gates. In general, state-of-the-art systems use numerous independent devices to manufacture electrical contacts and, above all, electronic gates.

[0008] Some of the localized state-of-the-art solutions are based on the deposition or growth of a conductive region using ion beams to generate the conductive material, mainly from precursors in a gaseous state.

[0009] In addition, the prior art also describes systems that use electron beams to scan the substrate. The prior art also describes the phenomenon of decomposition of a palladium acetate [Pd(OAc)2] film upon exposure to a gallium ion beam, resulting in metallic palladium. Likewise, exposure dose ranges have been determined that provide a palladium acetate [Pd(OAc)2] sample with conductive or non-conductive properties.

[0010] In other studies, the phenomenon of palladium acetate decomposition into metallic palladium has also been described using an electron beam.

[0011] However, no solution has been found in the state of the art that allows the manufacture of metal contacts and electronic door contacts in a simple, rapid manner and with reduced manufacturing costs.

[0012] DESCRIPTION OF THE INVENTION

[0013] The invention relates to a manufacturing system for producing electrical contacts and electronic door contacts in the same device. The system of the invention allows for the manufacturing of metallic contacts and electronic door contacts without modifying the system and by automating it to simplify its use.

[0014] Furthermore, it enables the fabrication of electronic gate contacts in a single device, without the need for a set of devices for film growth and consecutive application of lithography techniques.

[0015] The system of the invention comprises a main chamber and a support, which is located inside the main chamber. The support is intended to support the substrate with the manufacturing material (for example, a palladium acetate film where the manufacturing process takes place). In addition, the support has the function of mechanically positioning (X, Y, Z axes) the substrate intended to house the manufacturing material.

[0016] The system of the invention also comprises an ion column and an electron column, both located parallel to each other inside the main chamber. The ion column and the electron column are located perpendicular to the support. The ion column is intended to irradiate the manufacturing material with an ion beam, while the electron column is intended to irradiate the manufacturing material with an electron beam. The sequential combination of ion and electron beams in the same system allows the manufacture of electrical contacts and electronic gate contacts without the need for additional devices or modifications to the system of the invention.

[0017] Preferably, the ion column is a liquid-phase gallium ion column (liquid metal ion source, LMIS). Furthermore, the ion column may comprise a sharp-point emitter made of tungsten with a wavelength of 1 pm to 5 pm.

[0018] The electron column may preferably be a field emission electron column (FEG). It may also comprise a tungsten filament as an emitter.

[0019] Preferably, the manufacturing material is an organometallic compound. More preferably, said manufacturing material can be an organometallic film of palladium acetate, iridium acetate, or gold acetate. The organometallic compound used acquires conductive or non-conductive properties depending on the irradiation dose applied by the ion column and / or the electron column.

[0020] The manufacturing system of the invention may comprise a pre-loading chamber connected to the main chamber by a port. The pre-loading chamber allows the manufacturing material to be loaded without breaking the vacuum generated in the main chamber. The pre-loading chamber also comprises a support, aligned with the port and the main chamber support. This allows the transfer of the sample with the manufacturing material from the pre-loading chamber support to the main chamber support.

[0021] Likewise, the manufacturing system of the invention may comprise a vacuum module. The vacuum module may be connected to the main chamber, the pre-charge chamber, or both. Preferably, said vacuum module is connected to the main chamber and / or the pre-charge chamber by means of one or more valves and may comprise a rotary pump and a turbomolecular pump. Preferably, the system of the invention also comprises a laser interferometry positioning module connected to the support and configured to determine and achieve an exact position of said support. Determining an exact position of the support at each moment of the manufacturing process allows for greater precision in said process and the generation of smaller contacts.

[0022] The laser interferometry positioning module may comprise a light source, which generates a light beam for measurement. It may also comprise a beam splitter, which would be designed to divide the generated light beam into two: a first split light beam and a second split light beam.

[0023] The laser interferometry positioning module may also comprise a fixed mirror and a mirror coupled to the support, i.e., a movable mirror. The fixed mirror would reflect the second split light beam toward the beam splitter, while the movable mirror would reflect the first split light beam toward the beam splitter.

[0024] Finally, the laser interferometry positioning module may comprise a detector, intended to receive a combined beam of light generated by the beam splitter, which combines the first split beam of light and the second split beam of light that are incident after being reflected by the fixed mirror and the moving mirror, respectively.

[0025] The invention also relates to a method of manufacturing electrical contacts and electronic door contacts that makes use of the manufacturing system of the invention described.

[0026] The manufacturing method of the invention comprises the steps of providing a manufacturing material and introducing the substrate with the manufacturing material into the main chamber, making use of the support. Preferably, at this point, the pressure in the main chamber is set to a value less than 10 -6 mbar.

[0027] The electron column and ion column are then activated to irradiate the manufacturing material with an electron beam and an ion beam, respectively. The electron beam is activated first, followed by the ion beam. Preferably, during the ion column activation step, the ions are extracted and accelerated by applying an electric field of 30 kV. This generates a focused ion beam with a minimum diameter of 5 nm. The dose to be applied to the manufacturing material is in the range of 2–100 pC / cm 2 .

[0028] Similarly, during the electron column activation stage, electrons can be extracted and accelerated by applying a potential difference of 5 kV. In this case, a focused electron beam with a minimum diameter of 0.9 nm is generated, and the dose to be applied is in the range of 500–30,000 pC / cm. 2 .

[0029] Preferably, the step of introducing the manufacturing material into the main chamber comprises the steps of: isolating the pre-charge chamber from the main chamber by means of the gate; introducing the manufacturing material into the pre-charge chamber; activating the vacuum module in the pre-charge chamber to equalize its pressure to a pre-existing pressure in the main chamber; opening the gate separating the pre-charge chamber from the main chamber; transferring the manufacturing material to the main chamber support; and closing the gate separating the pre-charge chamber from the main chamber.

[0030] The method of the invention, by which electronic gate contacts and electrical contacts are manufactured, may comprise a step, prior to the step of introducing the substrate with the manufacturing material into the main chamber, of making alignment marks that indicate the work area. In addition, the method of the invention may comprise a prior step of depositing an organometallic film by spin-coating, before introducing the substrate with the manufacturing material into the main chamber. During the steps of activating the ion column and / or the electron column, the organometallic film decomposes. The method of the invention may also comprise a subsequent step of removing the non-irradiated areas with a developing agent.

[0031] In embodiments of the method of the invention, in which an electronic gate is manufactured, in the step of activating the ion column, the irradiation dose is set above 20 pC / cm 2in order to obtain layers of material or structures with conductive properties. However, during the electron column activation stage, the irradiation dose is set below 4000 pC / cm 2 in order to obtain layers of material with non-conductive properties.

[0032] Thus, the combined use of electron and ion irradiation on the fabrication material allows for the production of electronic gate contacts in the selected area and within the main chamber, without having to remove the substrate containing the fabrication material of interest. In contrast, state-of-the-art systems require the consecutive use of thin-film growth and lithography equipment to fabricate electronic gate contacts on the substrate of interest.

[0033] Furthermore, the use of organometallic precursors directly as active material allows obtaining material with different electrical functionality (conductive or non-conductive), depending on the irradiation conditions, in the same process.

[0034] DESCRIPTION OF THE DRAWINGS

[0035] To complement the description being made and in order to help better understand the characteristics of the invention, in accordance with a preferred example of practical implementation thereof, a set of drawings is attached as an integral part of said description, in which the following has been represented for illustrative and non-limiting purposes:

[0036] Figure 1.- shows an example of the manufacturing system of the invention.

[0037] Figure 2.- shows an example of the interferometer used in the manufacturing system of the invention.

[0038] Figure 3.- shows an example of an embodiment of a manufacturing process of electrical contacts by means of ionic irradiation using the manufacturing system of the invention, in particular, a first stage with a nanowire and alignment marks.

[0039] Figure 4 shows a subsequent stage of the embodiment of Figure 3, where an organometallic film is deposited. Figure 5 shows a subsequent stage of the embodiment of Figure 4, where electrical contacts are generated by irradiation.

[0040] Figure 6.- shows a subsequent stage of the embodiment in Figure 5, where the non-irradiated areas are eliminated, leaving only the electrical contacts.

[0041] Figure 7.- shows a first design of devices with an electronic gate generated by ionic and electronic irradiation using the manufacturing system of the invention in which a gate voltage is applied in a transverse direction to the nanostructure (top gating) between a palladium conductive structure and a substrate.

[0042] Figure 8.- shows a second device design with an electronic gate generated by ionic and electronic irradiation using the manufacturing system of the invention in which the gate voltage is applied in the lateral direction (side gating) between two conductive palladium deposits, the vacuum acting as an insulating layer.

[0043] Figure 9.- shows a third device design with an electronic gate generated by ionic and electronic irradiation using the manufacturing system of the invention in which the gate voltage is applied in the lateral direction (side gating) between two conductive palladium deposits using a non-conductive palladium structure as an insulating layer.

[0044] Figure 10.- shows electrical measurements, resistance-intensity curves (Rl), carried out at low temperature (2 K) to observe the modulation of the critical current in a nanowire as a function of the gate voltage applied in the device in Figure 7.

[0045] Figure 11.- shows electrical measurements, resistance-intensity curves (Rl), carried out at low temperature (2 K) to observe the modulation of the critical current in a nanowire as a function of the gate voltage applied in the device in Figure 8.

[0046] Figure 12.- shows electrical measurements, resistance-intensity curves (Rl), carried out at low temperature (2 K) to observe the modulation of the critical current in a nanowire as a function of the gate voltage applied in the device in Figure 9.

[0047] PREFERRED EMBODIMENT OF THE INVENTION The equipment presented in said document and represented in Figure 1 is dedicated to carrying out both electronic and ionic irradiations with the purpose of manufacturing electrical contacts and electronic door contacts in a direct, simple manner and all within the same chamber.

[0048] For this purpose, the manufacturing system shown in Figure 1 comprises a main chamber (1), a support (2), located in the main chamber (1) and intended to support a substrate with an organometallic film, for example, palladium acetate, an ion column (4), an electron column (5), an interferometer (3) and a valve connected to a vacuum module (6). Figure 1 also includes the pre-charge chamber (7), connected to the main chamber (1) through a gate (8).

[0049] The ion column (4) is located in the main chamber (1), perpendicular to the support (2) to irradiate the organometallic film of palladium acetate located on the support (2) with an ion beam. The electron column (5) is also located in the main chamber (1), parallel to the ion column (4), and is intended to irradiate the organometallic film of palladium acetate with an electron beam. The combination of the ion and electron beams makes it possible to obtain an electrical contact or an electronic gate contact.

[0050] In this case, the ion column (4) is a liquid-phase gallium ion column (liquid metal ion source, LMIS) and the electron column (5) is a field emission electron column (field emission gun, FEG). Both the ion column (4) and the electron column (5) comprise tungsten sharp-tip emitters.

[0051] The system shown also comprises a vacuum module (6), with a rotary pump and a turbomolecular pump, located in the main chamber (1) and in the pre-charge chamber (7) to obtain vacuum conditions in both chambers.

[0052] The movement of the manufacturing material is controlled by a laser interferometry positioning module (3) connected to the support (2) and configured to determine an exact position of said support (2). In this case, a “Michelson” type laser interferometer is used that allows very precise movement and positioning in the horizontal XY plane, reaching nanometric resolution. The laser interferometry positioning module (3), shown in Figure 2, comprises a light source (9), two mirrors (11 and 12), a beam splitter (10) and a detector (13). The light source (9) generates a light beam that falls on a point (C) of the beam splitter (10), transmitting a first divided light beam to the moving mirror (12) and a second divided light beam to the fixed mirror (11).After being reflected, the first and second split light beams recombine at a point C' of the beam splitter (10) forming an interference pattern that directly affects the detector (13). This pattern is formed by stripes or lines of different intensities, the distances of which are related to the wavelength of the laser light. When the position between the mirrors (11, 12) varies, a change in the interference pattern occurs, which the detector (13) relates to a change in the XY position of the support (2) of the manufacturing system of the invention.

[0053] In one embodiment, a palladium acetate film obtained by spin coating is used to manufacture electrical contacts and electronic gates using ionic and electron irradiation. The electrical properties of the organometallic Pd3(OAc) film are modulated depending on the type and dose of irradiation applied.

[0054] In the case of ion irradiation, the organometallic films were irradiated using an acceleration voltage of 30 kV and doses in the range of 2-100 pC / cm 2 . It has been determined that doses lower than 6 pC / cm 2 produce structures with non-conductive properties, while doses greater than 6 pC / cm 2 They generate structures with conductive properties, reaching resistivities of the order of T 10 2 pQ cm when the film is irradiated with a dose of 20 pC / cm 2 .

[0055] In the case of electron irradiations, the organometallic films were irradiated using an acceleration voltage of 5 kV and doses in the range of 500-30000 pC / cm 2 . It has been determined that doses lower than 4000 pC / cm 2 , produce structures with non-conductive properties, while doses greater than 4000 pC / cm 2They generate structures with conductive properties, reaching electrical resistivities of the order of T 10 2 pQ cm when the film is irradiated with a dose of 30,000 pC / cm 2 .

[0056] The invention also relates to a method for manufacturing electrical contacts and electronic door contacts that makes use of the manufacturing system described. In an exemplary embodiment of the invention, the manufacturing method comprises the steps of: providing a palladium acetate organometallic film as the manufacturing material; setting the pressure in the main chamber to a value less than 10 -6mbar by means of the vacuum module (6), isolate the pressure of the precharge chamber (7) from the pressure of the main chamber (1) by means of the gate (8) and the vacuum valve; introduce the manufacturing material into the precharge chamber (7); activate the vacuum module (6) in the precharge chamber (7) to equalize its pressure to the pressure of the main chamber (1); open the gate (8) that separates the precharge chamber (7) from the main chamber (1); transfer the manufacturing material to the support (2) of the main chamber (1); and close the gate (8) that separates the precharge chamber (7) from the main chamber (1). activate the ion column (4), applying an electric field of 30 kV, thus generating a focused ion beam on the manufacturing material with a minimum diameter of 5 nm, and a dose in the range of 2-100 pC / cm 2; and activate the electron column (5), applying a potential difference of 5 kV, thus generating a focused electron beam on the manufacturing material with a minimum diameter of 0.9 nm, and a dose in the range of 500-30000 pC / cm 2 .

[0057] In a first application of the method of the invention, the manufacturing system of the invention can be used to manufacture an electrical contact. In this case, since the ion dose for manufacturing palladium conductive structures is significantly lower than the electron dose, and, consequently, the irradiation time required is also lower, the manufacturing of electrical contacts with high resolution is carried out using the ion column (4).

[0058] The steps of said procedure for contacting a nanowire (15) are outlined in Figures 3 to 6, and can be applied to any other micro- or nanostructure. First, a sample is prepared for contact. This preparation includes: having a structure to be contacted, in this case a nanowire (15) has been manufactured on a YES / YESO2 substrate, and the creation of alignment marks (14) on the substrate to indicate the area to be irradiated subsequently. Next, an organometallic film (16), approximately 200-350 nm thick, is deposited on the sample by spin coating. The sample is then introduced into the support (2) of the main chamber (1) of the manufacturing system of the invention.The ion column (4) is positioned over the area to be irradiated using alignment marks, the interferometer (3) and the support (2), and the organometallic film is irradiated with a focused ion beam according to the pattern chosen for the electrical contacts (17). Once the process is complete, the sample is removed from the manufacturing system and all non-irradiated area is removed with an organic solvent. The unexposed manufacturing material maintains its initial chemical composition and therefore remains soluble in the organic solvent. However, the irradiated areas, mainly transformed into Pd(0), are not soluble and remain on the substrate as electrical contacts (17).

[0059] In a second application of the method of the invention, the manufacturing system of the invention can be used to manufacture electronic gate contacts by ion and electron irradiations.

[0060] In this case, we take advantage of the fact that the technology of electron and ion irradiation of palladium organometallic films allows the fabrication of palladium structures with both conductive and non-conductive properties depending on the type of irradiation and the irradiation dose.

[0061] Thus, gate voltage devices are manufactured by combining electronic irradiations with a dose of 1000 pC / cm 2 , giving rise to non-conductive layers, and ionic irradiation with a dose of 20 pC / cm 2 which give rise to conductive layers.

[0062] The versatility of this technique allows us to think about the design of different configurations for the gate voltage arrangement, as illustrated in figures 7 to 9.

[0063] In Figure 7, a device is shown in which a gate voltage (V g) in a transverse direction to the nanostructure (top gating) between a palladium conductive structure and a substrate. The manufacture of this device comprises the steps of: providing on a substrate (18) a nanowire with superconducting properties using focused ion beams (FIBID), where the nanowire (19) can comprise Tungsten and, preferably, can comprise Tungsten and Carbon, resulting in a WC nanowire, depositing a first organometallic film of palladium acetate by the spin-coating technique, irradiating the organometallic film (20) with a dose of 1000 pC / cm using the electron column 2 , remove a non-irradiated area with a developing agent (organic solvent), for example, chloroform, deposit a second organometallic film of palladium acetate by the spin-coating technique, irradiate using the ion column the organometallic film (21) with a dose of 20 pC / cm 2, remove the area not irradiated with the developing agent, and manufacture electrical contacts, for example, of Pt-C generated by FIBID, which allow the manufactured device to be contacted with a chip to perform electrical measurements on the device.

[0064] Figure 10 shows the electrical measurements, resistance-intensity curves (Rl), recorded at low temperature (2 K) to observe the modulation of the critical current, le, in a WC nanowire as a function of the gate voltage (V g : 0 - 4 V) applied to the device illustrated in Figure 7. In this case, it can be observed that the l c is deleted for V g = 3.75 V.

[0065] Electrical measurements on the device are performed using a physical properties measurement system (PPMS). To do this, the critical parameters of the WC nanowire, i.e., the critical temperature and critical current, are first determined.

[0066] Electrical measurements are then taken below the critical temperature of the superconducting material. In the preferred embodiments described, the electrical measurements are performed at a temperature of 2 K. An external voltage source is then connected, allowing an electric field to be applied via the device's gate electrodes. Thus, the electrical characterization of this device consists of applying an electric current across the external contacts of the nanowire while measuring the voltage drop across the internal contacts of the nanowire. These steps are performed for each gate voltage applied across the gate electrodes until complete suppression of the material's superconductivity is observed.

[0067] In Figures 8 and 9, the gate voltage is applied in the lateral direction (side gating) between two conductive palladium deposits.

[0068] In the case shown in Figure 8, there is no material between the palladium metal contacts, the vacuum acting as an insulating layer.

[0069] The manufacture of this device comprises the steps of: depositing a first organometallic layer of palladium acetate by the spin-coating technique, irradiating the organometallic film (24) using the ion column with a dose of 20 pC / cm 2 , remove non-irradiated areas with the chloroform developing agent. provide on a substrate (22) a nanowire with superconducting properties (23) generated by FIBID, where the nanowire (19) can comprise Tungsten and, preferably, can comprise Tungsten and Carbon, resulting in a WC nanowire, manufacture Pt-C electrical contacts generated by FIBID to contact the device with a chip and perform electrical measurements on it.

[0070] Figure 11 shows the electrical measurements, resistance-intensity curves (Rl), carried out at low temperature (2 K) to observe the modulation of the critical current in a WC nanowire as a function of the gate voltage (V g : 0 - 5 V) applied to the device in Figure 8. In this case, it can be observed that the l c is deleted for V g = 4.75 V.

[0071] In the case shown in Figure 9, a non-conducting palladium structure is used as an insulating layer.

[0072] The manufacture of this device comprises the steps of: depositing a first organometallic layer of palladium acetate by the spin-coating technique, irradiating the organometallic film (27) using the ion column with a dose of 20 pC / cm 2, removing non-irradiated parts with the chloroform developing agent, providing on a substrate (25) a nanowire with superconducting properties (26) generated by FIBID, where the nanowire (19) can comprise Tungsten and, preferably, can comprise Tungsten and Carbon, resulting in a WC nanowire; manufacturing Pt-C contacts by FIBID to contact the device with a chip and perform electrical measurements, depositing a second organometallic layer (28) of palladium acetate by the spin-coating technique, irradiating using the electron column the organometallic film (28) with a dose of 1000 pC / cm 2 , and remove non-irradiated parts with the chloroform developing agent.

[0073] Figure 12 shows the electrical measurements, resistance intensity curves (Rl), carried out at low temperature (2 K) to observe the modulation of the critical current in a WC nanowire as a function of the applied gate voltage (V g: 0 - 3 V) in the device in Figure 9. In this case, it can be observed that the l c is deleted for V g = 2.80 V.

[0074] Alternatively, instead of using a nanowire, a thin film could also be used.

Claims

1. A system for manufacturing electrical contacts and electronic gate contacts, comprising: a main chamber (1); a support (2) located in the main chamber (1) and intended to support and position a substrate intended to house the manufacturing material; an ion column (4) located in the main chamber (1) perpendicular to the support (2) and intended to irradiate the manufacturing material with an ion beam; and an electron column (5) located in the main chamber (1) parallel to the ion column (4) and intended to irradiate the manufacturing material with an electron beam to obtain an electrical contact or an electronic gate contact.

2. Manufacturing system according to claim 1, wherein the manufacturing material is an organometallic compound.

3. Manufacturing system according to claim 2, wherein the manufacturing material is palladium acetate, iridium acetate or gold acetate.

4. Manufacturing system according to any of claims 1 to 3, wherein the ion column (4) is a column of gallium ions in liquid phase (liquid metal ion source, LMIS).

5. Manufacturing system according to claim 4, wherein the ion column (4) further comprises a 1 pm to 5 pm tungsten sharp-tip emitter.

6. Manufacturing system according to any of claims 1 to 5, wherein the electron column (5) is a field emission electron column (field emission gun, FEG).

7. Manufacturing system according to claim 6, wherein the electron column (5) further comprises a tungsten filament as emitter.

8. Manufacturing system according to any of claims 1 to 7, further comprising a pre-loading chamber (7) connected to the main chamber (1) by means of a gate (8) and a vacuum valve, allowing the manufacturing material to be loaded without depressurizing the main chamber.

9. Manufacturing system according to any of claims 1 to 8, further comprising a vacuum module (6) located in the main chamber (1) and / or in the pre-loading chamber (7).

10. Manufacturing system according to claim 9, wherein the vacuum module (6) comprises a rotary pump and a turbomolecular pump.

11. Manufacturing system according to any of claims 1 to 10, further comprising a laser interferometry positioning module (3) connected to the support (2) and configured to determine an exact position of said support (2).

12. Manufacturing system according to claim 11, wherein the laser interferometry positioning module (3) comprises: a light source (9), intended to generate a light beam; a beam splitter (10), intended to split the light beam into a first split light beam and a second split light beam; a fixed mirror (11), intended to reflect the second split light beam towards the beam splitter; a movable mirror (12), coupled to the support, intended to reflect the first split light beam towards the beam splitter (10); and a detector (13), intended to receive a combined beam of light once the beam splitter (10) combines the first split light beam and the second split light beam.

13. Method of manufacturing electrical contacts and electronic door contacts that makes use of the manufacturing system according to any of claims 1 to 12 and comprising the steps of: providing a manufacturing material; introducing a substrate with the manufacturing material into the main chamber (1), depositing it on the support (2); activating the ion column (4) to irradiate the manufacturing material with an ion beam; and activating the electron column (5) to irradiate the manufacturing material with an electron beam in order to obtain an electrical contact or an electronic gate contact.

14. Manufacturing method according to claim 13, wherein in the step of activating the ion column (4), the ions are extracted and accelerated by applying a potential difference of 30 kV, thus generating a focused ion beam with a minimum diameter of 5 nm, and a dose in the range of 2-100 pC / cm 2 .

15. Manufacturing method according to any of claims 13 to 15. 14, where in the step of activating the electron column (5), the electrons are extracted and accelerated by applying a potential difference of 5 kV, thus generating a focused electron beam with a minimum diameter of 0.9 nm, and a dose in the range of 500-30000 pC / cm 2 .

16. Manufacturing method according to any of claims 13 to 15. 15, where the pressure in the main chamber (1) is set to a value less than 10" 6 mbar.

17. Manufacturing method according to any of claims 13 to 15. 16, where electrical contacts are manufactured and the method also comprises a step of making alignment marks (14) to indicate an irradiation zone, prior to the step of activating the ion column (4), where the manufacturing material comprises an organometallic film (16) deposited by spin coating, and which also comprises a step of eliminating the non-irradiated zones with an organic solvent, after the step of activating the ion column (4).

18. Manufacturing method according to any of claims 13 to 16, wherein an electronic gate is manufactured and wherein in the step of activating the ion column (4) the irradiation dose is set above 6 pC / cm 2 , to obtain layers of material with conductive properties, and in the activation stage The electron column (5) sets the irradiation dose below 4000 pC / cm 2 , to obtain layers of material with non-conductive properties.