Light-emitting device, light-emitting substrate, preparation method, backlight module, and display apparatus

Abstract

A light-emitting device, comprising a first electrode, a light-emitting stack layer, a second electrode, and a passivation layer. The light-emitting stack layer is arranged on one side of the first electrode and is connected to the first electrode. The second electrode is arranged on the side of the light-emitting stack layer away from the first electrode. The second electrode is configured to connect to a driving backplane. The passivation layer comprises a first passivation portion and a second passivation portion, wherein the first passivation portion covers the surface of the light-emitting stack layer away from the first electrode; the first passivation portion is provided with a first via hole, and the second electrode is connected to the light-emitting stack layer by means of the first via hole; the second passivation portion covers the side wall of the light-emitting stack layer and extends to the side of the light-emitting stack layer away from the second electrode; and the distance between the part of the second passivation portion that extends beyond the light-emitting stack layer and the light-emitting stack layer is greater than the thickness of the first electrode.

Description

Light-emitting device and light-emitting substrate and preparation method thereof, backlight module and display device Technical Field

[0001] The present disclosure relates to the field of display technology, and in particular to a light-emitting device and a light-emitting substrate and a preparation method thereof, a backlight module and a display device. Background Art

[0002] With the development of light-emitting diode (LED) technology, light-emitting substrates using submillimeter or even micron-scale light-emitting diodes (LEDs) have become widely used. This allows products such as liquid crystal displays (LCDs) to achieve contrast levels comparable to those of organic light-emitting diode (OLED) displays while retaining the technical advantages of LCDs. This improves display quality and provides users with a superior visual experience.

[0003] Summary of the Invention

[0004] On the one hand, a light-emitting device is provided. The light-emitting device includes a first electrode, a light-emitting stack layer, a second electrode and a passivation layer. The light-emitting stack layer is arranged on one side of the first electrode and is connected to the first electrode. The second electrode is arranged on a side of the light-emitting stack layer away from the first electrode. The second electrode is configured to be connected to a driving backplane. The passivation layer includes a first passivation portion and a second passivation portion. The first passivation portion covers the surface of the light-emitting stack layer away from the first electrode. The first passivation portion is provided with a first via hole, and the second electrode is connected to the light-emitting stack layer through the first via hole. The second passivation portion covers the side wall of the light-emitting stack layer and extends to the side of the light-emitting stack layer away from the second electrode. The distance between the portion of the second passivation portion extending beyond the light-emitting stack layer and the light-emitting stack layer is greater than the thickness of the first electrode.

[0005] In some embodiments, the second passivation portion covers the sidewalls of the light-emitting stacked layer and the first electrode, and extends to a side of the light-emitting stacked layer away from the second electrode.

[0006] In some embodiments, the light emitting device further comprises a connecting electrode, the connecting electrode being disposed on a side of the first electrode away from the second electrode, and covering the first electrode and extending to a surface of the second passivation portion away from the first passivation portion.

[0007] In some embodiments, boundaries of two surfaces of the light-emitting stacked layer and the first electrode that are opposite to each other are connected to form a slope surface, and the slope angle of the slope surface is greater than or equal to 60°.

[0008] In some embodiments, the light-emitting device further comprises a hard mask layer disposed between a surface of the light-emitting stacked layer away from the first electrode and the passivation layer. The hard mask layer is provided with a second via hole, and the second electrode is connected to the light-emitting stacked layer through the first via hole and the second via hole.

[0009] In some embodiments, boundaries of two surfaces of the light-emitting stacked layer and the first electrode that are opposite to each other are connected to form a slope surface, and the slope angle of the slope surface is greater than or equal to 80°.

[0010] In some embodiments, the thickness of the first electrode is

[0011] In some embodiments, a sidewall of the light-emitting stacked layer forms a step structure, and a circumferential boundary of the light-emitting stacked layer is indented in a step-like manner from the second electrode to the first electrode.

[0012] In some embodiments, the light-emitting device further includes a reflective layer, and the reflective layer is disposed on a side of the passivation layer away from the light-emitting stack layer.

[0013] On the other hand, a light-emitting device is provided. The light-emitting device includes a first electrode, a light-emitting stack layer, a second electrode and a passivation layer. The light-emitting stack layer is arranged on the first electrode and connected to the first electrode. The boundary of the light-emitting stack layer is retracted compared to the boundary of the first electrode. The second electrode is arranged on a side of the light-emitting stack layer away from the first electrode. The second electrode is configured to be connected to a driving backplane. The passivation layer includes a first passivation portion and a second passivation portion that are connected to each other. The first passivation portion covers the surface of the light-emitting stack layer away from the first electrode. The first passivation portion is provided with a first via hole, and the second electrode is connected to the light-emitting stack layer through the first via hole. The second passivation portion covers the side wall of the light-emitting stack layer, and at least part of the edge of the first electrode extends beyond the second passivation portion.

[0014] In some embodiments, the second passivation portion is located on an edge portion of the first electrode extending beyond the light-emitting stack layer, and an outer boundary of the second passivation portion is retracted relative to a boundary of the first electrode.

[0015] In some embodiments, the second passivation portion includes a first sub-portion and a second sub-portion connected along the circumference of the light-emitting stack. The first sub-portion covers the sidewalls of the light-emitting stack and the sidewalls of the first electrode. The second sub-portion covers the sidewalls of the light-emitting stack and is located on the edge of the first electrode that extends beyond the light-emitting stack. The edge of the first electrode corresponding to the second sub-portion extends beyond the second passivation portion.

[0016] On the other hand, a light-emitting device is provided. The light-emitting device includes a first electrode, a light-emitting stack layer, a second electrode and a passivation layer. The first electrode includes an electrode body and a plurality of bonding protrusions, and the plurality of bonding protrusions are spaced apart on one side of the electrode body. The light-emitting stack layer is arranged on a side of the electrode body away from the bonding protrusions and is connected to the electrode body. The second electrode is arranged on a side of the light-emitting stack layer away from the first electrode. The second electrode is configured to connect to a driving backplane. The passivation layer includes a first passivation portion and a second passivation portion connected to each other. The first passivation portion covers the surface of the light-emitting stack layer away from the first electrode. The first passivation portion is provided with a first via hole, and the second electrode is connected to the light-emitting stack layer through the first via hole. The second passivation portion covers at least part of the side wall of the light-emitting stack layer and the electrode body.

[0017] In some embodiments, the plurality of bonding protrusions are arranged in an array.

[0018] In another aspect, a light-emitting substrate is provided. The light-emitting substrate includes a plurality of light-emitting devices according to any of the above embodiments. The driving backplane is provided with a plurality of third electrodes. The second electrodes of the light-emitting devices are connected to the third electrodes of the driving backplane.

[0019] In some embodiments, of at least two adjacent light-emitting devices, one is a first light-emitting device and the other is a second light-emitting device. The passivation layer of the first light-emitting device includes a first passivation portion and a second passivation portion connected to each other, the second passivation portion covering the sidewalls of the light-emitting stack layer, and at least part of the edge of the first electrode extends beyond the second passivation portion. The passivation layer of the second light-emitting device includes a first passivation portion and a second passivation portion connected to each other, the second passivation portion including a first sub-portion and a second sub-portion connected along the circumference of the light-emitting stack layer, the first sub-portion covering the sidewalls of the light-emitting stack layer and the sidewalls of the first electrode; the second sub-portion covering the sidewalls of the light-emitting stack layer and being located on the edge portion of the first electrode extending beyond the light-emitting stack layer; the edge portion of the first electrode corresponding to the second sub-portion extends beyond the second passivation portion.

[0020] The first and second light-emitting devices each include a reflective layer disposed on a side of the passivation layer away from the light-emitting stack. The first subsection of the second light-emitting device faces the first light-emitting device, and the reflective layer of the second light-emitting device covers the first subsection and is connected to a portion of the first electrode of the first light-emitting device that extends beyond the passivation layer.

[0021] In some embodiments, one of at least two adjacent light-emitting devices is a third light-emitting device and the other is a fourth light-emitting device. The passivation layer of the third light-emitting device includes a first passivation portion and a second passivation portion connected to each other, the second passivation portion covering the sidewalls of the light-emitting stack layer, and at least part of the edge of the first electrode extends beyond the second passivation portion. The passivation layer of the second light-emitting device includes a first passivation portion and a second passivation portion connected to each other, the second passivation portion including a first sub-portion and a second sub-portion connected along the circumference of the light-emitting stack layer, the first sub-portion covering the sidewalls of the light-emitting stack layer and the sidewalls of the first electrode; the second sub-portion covering the sidewalls of the light-emitting stack layer and being located on the edge portion of the first electrode extending beyond the light-emitting stack layer; the edge portion of the first electrode corresponding to the second sub-portion extends beyond the second passivation portion.

[0022] The light-emitting substrate further includes a first planar layer disposed on a side of the second electrode proximal to the light-emitting stack of the light-emitting device. A third via hole is defined in the first planar layer. The second electrode of the third light-emitting device is connected to the portion of the first electrode of the fourth light-emitting device extending beyond the passivation layer through the third via hole.

[0023] In some embodiments, the light-emitting substrate has a light-emitting area and a peripheral area, and the light-emitting substrate further includes a surface electrode, a plurality of packaging parts, and an auxiliary electrode.

[0024] The surface electrode covers the light-emitting area and extends to the peripheral area. The surface electrode is arranged on the side of the light-emitting device away from the driving backplane, and is connected to the first electrode of the light-emitting device. The multiple packaging parts are arranged at intervals on the side of the surface electrode away from the driving backplane. The orthographic projection of one light-emitting device on the driving backplane is located within the range of the orthographic projection of one packaging part on the driving backplane. The auxiliary electrode is arranged on the side of the surface electrode away from the driving backplane, and is connected to the surface electrode. The auxiliary electrode is provided with a plurality of openings, and one of the openings exposes one light-emitting device. And the shape of the orthographic projection of the opening on the driving backplane is the same as the shape of the orthographic projection of the light-emitting device on the driving backplane.

[0025] In another aspect, a backlight module is provided, comprising: a light-emitting substrate as described in any of the above embodiments; and a plurality of optical films, wherein the light-emitting substrate has a light-emitting side and a non-light-emitting side opposite to each other, and the plurality of optical films are disposed on the light-emitting side of the light-emitting substrate.

[0026] In another aspect, a display device is provided, comprising: the backlight module and a display panel as described in the above embodiment, wherein the display panel is disposed on a side of the plurality of optical films in the backlight module away from the light-emitting substrate.

[0027] In another aspect, a method for preparing a light-emitting device is provided. The method comprises: preparing a transfer epitaxial wafer. The transfer epitaxial wafer comprises a first substrate, a light-emitting stacked layer, and a first electrode, wherein the first electrode and the light-emitting stacked layer are sequentially stacked on the first substrate. The first electrodes of multiple transfer epitaxial wafers are connected to a second substrate. Multiple transfer epitaxial wafers are spaced apart on the second substrate. The first substrate of the transfer epitaxial wafer is removed. The transfer epitaxial wafer is patterned so that each transfer epitaxial wafer is divided into multiple sub-epitaxial wafers, each of which comprises a light-emitting stacked layer and a first electrode. A passivation layer and a second electrode are sequentially formed. The passivation layer comprises a first passivation portion and a second passivation portion; the first passivation portion covers a surface of the light-emitting stacked layer away from the first electrode; the first passivation portion is provided with a first via hole, and the second electrode is connected to the light-emitting stacked layer through the first via hole. The second substrate is removed.

[0028] In some embodiments, connecting the first electrodes of the plurality of transfer epitaxial wafers to the second substrate includes: forming a plurality of bonding bumps on the second substrate, and bonding the first electrode of each transfer epitaxial wafer to at least two bonding bumps.

[0029] In some embodiments, connecting the first electrodes of the plurality of transfer epitaxial wafers to the second substrate includes: forming a second adhesive layer on the second substrate; and bonding the first electrodes of the plurality of transfer epitaxial wafers to the second adhesive layer.

[0030] In some embodiments, the step of connecting the first electrodes of the plurality of transfer epitaxial wafers to the second substrate includes forming a third adhesive layer and a bonding layer on the second substrate. The thickness of the third adhesive layer is The first electrodes of the plurality of transfer epitaxial wafers are bonded to the bonding layer.

[0031] In some embodiments, patterning the transfer epitaxial wafer includes: simultaneously patterning the light-emitting stacked layer and the first electrode through a single dry etching process.

[0032] In some embodiments, before simultaneously patterning the light-emitting stacked layer and the first electrode through a single dry etching process, patterning the transfer epitaxial wafer further comprises: forming a hard mask layer on a side of the transfer epitaxial wafer away from the second substrate. The hard mask layer covers a surface of the light-emitting stacked layer away from the first electrode.

[0033] In some embodiments, patterning the transfer epitaxial wafer includes patterning the light-emitting stacked layer and the first electrode respectively through two dry etching processes, so that the boundary of the light-emitting stacked layer is retracted compared to the boundary of the first electrode.

[0034] In some embodiments, at least two adjacent light-emitting devices, one of which is a first light-emitting device and the other of which is a second light-emitting device, sequentially forming the passivation layer and the second electrode comprises:

[0035] A passivation layer is formed. The passivation layer of the first light-emitting device is a first passivation layer, and the passivation layer of the second light-emitting device is a second passivation layer. The second passivation portion of the first passivation layer is recessed relative to the boundary of the first electrode. The second passivation portion of the second passivation layer includes a first sub-portion and a second sub-portion. The first sub-portion covers the sidewalls of the light-emitting stacked layer and the sidewalls of the first electrode, and the first sub-portion faces the second passivation layer. The second sub-portion covers the sidewalls of the light-emitting stacked layer and is located on the edge of the first electrode that extends beyond the light-emitting stacked layer.

[0036] A reflective layer is formed. The reflective layer is disposed on a side of the passivation layer away from the light-emitting stack. The reflective layer of the first light-emitting device is a first reflective layer, and the reflective layer of the second light-emitting device is a second reflective layer. The second reflective layer covers a first subportion of the second passivation layer and is connected to a portion of the first electrode of the first light-emitting device that extends beyond the first passivation layer.

[0037] A second electrode is formed. The second electrode is disposed on a side of the reflective layer away from the light-emitting stacked layer and is connected to the reflective layer.

[0038] In some embodiments, at least two adjacent light-emitting devices, one of which is a third light-emitting device and the other of which is a fourth light-emitting device. The sequentially forming of the passivation layer and the second electrode comprises:

[0039] A passivation layer is formed. The passivation layer of the third light-emitting device is a third passivation layer, and the passivation layer of the fourth light-emitting device is a fourth passivation layer. The second passivation portion of the third passivation layer is indented relative to the boundary of the first electrode. The second passivation portion of the fourth passivation layer includes a first sub-portion and a second sub-portion. The first sub-portion covers the sidewalls of the light-emitting stacked layer and the sidewalls of the first electrode, and the first sub-portion faces the fourth passivation layer. The second sub-portion covers the sidewalls of the light-emitting stacked layer and is located on the edge portion of the first electrode that extends beyond the light-emitting stacked layer.

[0040] A reflective layer is formed. The reflective layer is disposed on a side of the passivation layer away from the light-emitting stacked layer, and an orthographic projection of the reflective layer on the driving backplane is within the range of the orthographic projection of the passivation layer on the driving backplane.

[0041] A first flat layer is formed. The first flat layer is disposed on a side of the reflective layer away from the light-emitting stacked layer. The first flat layer is provided with a third via hole.

[0042] A second electrode is formed. The second electrode is disposed on a side of the reflective layer away from the light-emitting stack layer. The second electrode of the third light-emitting device is connected to a portion of the first electrode of the fourth light-emitting device extending beyond the passivation layer through the third via hole.

[0043] In some embodiments, after patterning the light-emitting stack layer and the first electrode through a dry etching process, patterning the transferred epitaxial wafer also includes: etching the side walls of the light-emitting stack layer and the first electrode through a wet etching process, so that the crystals with non-polar surfaces exposed on the side walls of the light-emitting stack layer are removed.

[0044] In some embodiments, preparing the transit epitaxial wafer includes: forming an epitaxial wafer on a third substrate; the epitaxial wafer including a light-emitting stack; forming a first adhesive layer on the first substrate; connecting the first substrate with the first adhesive layer to the epitaxial wafer; removing the third substrate; and forming a first electrode on a side of the epitaxial wafer away from the first substrate.

[0045] In some embodiments, the preparation of the transit epitaxial wafer includes: forming an epitaxial wafer on a first substrate, the epitaxial wafer including a light-emitting stacked layer, and forming a first electrode on a side of the epitaxial wafer away from the first substrate.

[0046] In yet another aspect, a method for preparing a light-emitting substrate is provided. The method comprises: preparing a light-emitting device using the method for preparing a light-emitting device described in any of the above embodiments; arranging a plurality of the light-emitting devices on a fourth substrate in a predetermined arrangement; removing the fourth substrate, and connecting the arranged light-emitting devices to a driver backplane.

[0047] In some embodiments, the preparation method of the light-emitting substrate further includes: forming a surface electrode. The surface electrode is arranged on the side of the light-emitting device away from the driving backplane, and is connected to the first electrode of the light-emitting device. A digital exposure process is used to form an auxiliary cathode. The auxiliary electrode is arranged on the side of the surface electrode away from the driving backplane, and is connected to the surface electrode. The auxiliary electrode is provided with a plurality of openings, and one of the openings exposes one of the light-emitting devices. And the shape of the orthographic projection of the opening on the driving backplane is the same as the shape of the orthographic projection of the light-emitting device on the driving backplane. A packaging part is formed. The orthographic projection of one of the light-emitting devices on the driving backplane is located within the range of the orthographic projection of one of the packaging parts on the driving backplane. BRIEF DESCRIPTION OF THE DRAWINGS

[0048] To more clearly illustrate the technical solutions of the present disclosure, the following briefly introduces the drawings required for use in some embodiments of the present disclosure. Obviously, the drawings described below are only drawings of some embodiments of the present disclosure, and those skilled in the art can also derive other drawings based on these drawings. Furthermore, the drawings described below are schematic diagrams and are not intended to limit the actual dimensions of the products, actual processes of the methods, actual timing of signals, and the like involved in the embodiments of the present disclosure.

[0049] FIG1 is a structural diagram of a display device according to some embodiments;

[0050] FIG2 is a structural diagram of another display device according to some embodiments;

[0051] FIG3 is a cross-sectional view of a display device according to some embodiments;

[0052] FIG4 is a top view of a light emitting substrate according to some embodiments;

[0053] FIG5 is a structural diagram of a light emitting device according to some embodiments;

[0054] FIG6 is a structural diagram of another light emitting device according to some embodiments;

[0055] FIG7 is a structural diagram of another light emitting device according to some embodiments;

[0056] FIG8 is a structural diagram of another light emitting device according to some embodiments;

[0057] FIG9 is a structural diagram of another light emitting device according to some embodiments;

[0058] FIG10 is a structural diagram of another light emitting device according to some embodiments;

[0059] FIG11 is a structural diagram of another light emitting device according to some embodiments;

[0060] FIG12 is a structural diagram of the light emitting device shown in FIG9 and the light emitting device shown in FIG10 connected in series;

[0061] FIG13 is a structural diagram of the light emitting device shown in FIG9 and the light emitting device shown in FIG11 connected in series;

[0062] FIG14 is a structural diagram of another light emitting device according to some embodiments;

[0063] FIG15 is a diagram showing detection results of a transmission electron microscope according to some embodiments;

[0064] FIG16 is a diagram showing detection results of a scanning electron microscope according to some embodiments;

[0065] 17 to 26 are flow charts of methods for preparing light-emitting devices according to some embodiments;

[0066] 27 and 28 are flow charts of methods for preparing a light-emitting substrate according to some embodiments;

[0067] 29 to 41 are diagrams showing steps of a method for manufacturing a light emitting device according to some embodiments;

[0068] FIG42 is a diagram illustrating the steps of a method for preparing a light-emitting substrate according to some embodiments;

[0069] FIG43 is a top view of a light emitting substrate according to some embodiments;

[0070] FIG44 is a structural diagram of a light-emitting substrate including the light-emitting devices connected in series as shown in FIG12 according to some embodiments;

[0071] FIG45 is a structural diagram of a light-emitting substrate including the light-emitting devices connected in series as shown in FIG13 according to some embodiments. DETAILED DESCRIPTION

[0072] The following will be combined with the accompanying drawings to clearly and completely describe the technical solutions in some embodiments of the present disclosure. Obviously, the embodiments described are only some embodiments of the present disclosure, not all embodiments. Based on the embodiments provided by the present disclosure, all other embodiments obtained by ordinary technicians in this field are within the scope of protection of the present disclosure.

[0073] Unless the context requires otherwise, throughout the specification and claims, the term "comprise" and its other forms, such as the third person singular form "comprises" and the present participle form "comprising", are to be interpreted as open and inclusive, that is, "including, but not limited to". In the description of the specification, the terms "one embodiment", "some embodiments", "exemplary embodiments", "example", "specific example" or "some examples" are intended to indicate that the particular features, structures, materials or characteristics associated with the embodiment or example are included in at least one embodiment or example of the present disclosure. The schematic representation of the above terms does not necessarily refer to the same embodiment or example. In addition, the particular features, structures, materials or characteristics may be included in any one or more embodiments or examples in any appropriate manner.

[0074] In the following, the terms "first" and "second" are used for descriptive purposes only and should not be understood to indicate or imply relative importance or implicitly specify the number of the technical features indicated. Therefore, a feature defined as "first" or "second" may explicitly or implicitly include one or more of the features. In the description of the embodiments of the present disclosure, unless otherwise specified, "plurality" means two or more.

[0075] When describing some embodiments, the expressions "coupled" and "connected" and their derivatives may be used. The term "connected" should be understood in a broad sense. For example, "connection" can be a fixed connection, a detachable connection, or an integral connection; it can be directly connected or indirectly connected through an intermediate medium. The term "coupled" indicates, for example, that two or more components are in direct physical or electrical contact. The term "coupled" or "communicatively coupled" may also refer to two or more components that are not in direct contact with each other, but still cooperate or interact with each other. The embodiments disclosed herein are not necessarily limited to the contents of this document.

[0076] “At least one of A, B and C” has the same meaning as “at least one of A, B or C” and both include the following combinations of A, B and C: A only, B only, C only, the combination of A and B, the combination of A and C, the combination of B and C, and the combination of A, B and C.

[0077] “A and / or B” includes the following three combinations: A only, B only, and a combination of A and B.

[0078] The use of "adapted to" or "configured to" herein is intended to be open and inclusive language that does not exclude devices adapted or configured to perform additional tasks or steps.

[0079] As used herein, "about," "substantially," or "approximately" includes the stated value and an average value that is within an acceptable range of deviation from the particular value as determined by one of ordinary skill in the art taking into account the measurements in question and the errors associated with the measurement of the particular quantity (i.e., the limitations of the measurement system).

[0080] As used herein, "parallel", "perpendicular", and "equal" include the situations described and situations similar to the situations described, and the range of the similar situations is within an acceptable deviation range, wherein the acceptable deviation range is as determined by a person of ordinary skill in the art taking into account the measurement in question and the errors associated with the measurement of the specific quantity (i.e., the limitations of the measurement system). For example, "parallel" includes absolute parallelism and approximate parallelism, wherein the acceptable deviation range of approximate parallelism can be, for example, a deviation within 5°; "perpendicular" includes absolute perpendicularity and approximate perpendicularity, wherein the acceptable deviation range of approximate perpendicularity can also be, for example, a deviation within 5°. "Equal" includes absolute equality and approximate equality, wherein the acceptable deviation range of approximate equality can be, for example, that the difference between the two equals is less than or equal to 5% of either one.

[0081] It will be understood that when a layer or element is referred to as being on another layer or substrate, it can be directly on the other layer or substrate, or intervening layers may be present therebetween.

[0082] Exemplary embodiments are described herein with reference to cross-sectional and / or plan views that are idealized exemplary drawings. In the drawings, the thickness of layers and the area of ​​regions are exaggerated for clarity. Therefore, variations in shape relative to the drawings due to, for example, manufacturing techniques and / or tolerances are contemplated. Therefore, the exemplary embodiments should not be construed as limited to the shapes of the regions shown herein, but rather include deviations in shape due to, for example, manufacturing. For example, an etched region shown as a rectangle will typically have curved features. Therefore, the regions shown in the drawings are schematic in nature, and their shapes are not intended to illustrate the actual shape of regions of the device and are not intended to limit the scope of the exemplary embodiments.

[0083] As shown in FIG. 1 , some embodiments of the present disclosure provide a display device 1000 , which may be any device that displays an image, whether in motion (eg, video) or stationary (eg, still image), and whether textual or graphic.

[0084] For example, referring to Figures 1 and 2, the display device 1000 can be any product or component with a display function, such as a television, a laptop computer, a tablet computer, a mobile phone, a personal digital assistant (PDA), a navigator, a wearable device, a virtual reality (VR) device, etc.

[0085] For example, as shown in FIG1 , the display device 1000 may be a portable display product; for example, the display device 1000 may be the mobile phone shown in FIG1 . For another example, referring to FIG2 , the display device 1000 may be a wearable device; for example, the display device 1000 may be the watch shown in FIG2 .

[0086] It should be noted that, depending on different application scenarios, the shape of the display surface of the display device 1000 is not unique. The shape of the display surface of the display device 1000 can be any one of a circle, an ellipse, a polygon or an irregular shape, which is not specifically limited in the embodiments of the present disclosure.

[0087] In some embodiments, referring to FIG. 3 , the display device 1000 may be a liquid crystal display (LCD).

[0088] 3 , the display device 1000 includes a backlight module 100 , a display panel 200 and a cover plate 300 . The display panel 200 is disposed on a side of the backlight module 100 from which light is emitted, and the cover plate 300 is disposed on a side of the display panel 200 away from the backlight module 100 .

[0089] Referring to FIG3 , the backlight module 100 includes a light-emitting substrate 110 having a light-emitting side and a non-light-emitting side. The light-emitting side refers to the side of the light-emitting substrate 110 from which light is emitted (the upper side of the light-emitting substrate 110 in FIG3 ), while the non-light-emitting side refers to the side opposite the light-emitting side (the lower side of the light-emitting substrate 110 in FIG3 ). The display panel 200 is disposed on the light-emitting side of the light-emitting substrate 110.

[0090] In some embodiments, referring to FIG. 3 , the backlight module 100 further includes a plurality of optical films 120 , which are disposed on the light-emitting side of the light-emitting substrate 110 .

[0091] The light emitted from the light-emitting substrate 110 passes through the optical film 120 and then is emitted toward the display panel 200. That is, the display panel 200 is disposed on the side of the optical film 120 that is away from the light-emitting substrate 110. It should be noted that the optical film 120 modulates the wavelength and / or propagation direction of the light emitted from the light-emitting substrate 110.

[0092] As shown in FIG3 , the light-emitting substrate 110 can directly emit white light, which is then modulated in its propagation direction after passing through the multiple optical films 120 and then emitted toward the display panel 200. Alternatively, the light-emitting substrate 110 can also emit light of other colors (e.g., blue light), which is then modulated in its wavelength and / or propagation direction after passing through the multiple optical films 120 and then emitted toward the display panel 200.

[0093] For example, referring to FIG3 , the plurality of optical films 120 include a scattering layer 121, a color conversion layer 122, a diffuser 123, and a composite film 124. The scattering layer 121, the color conversion layer 122, the diffuser 123, and the composite film 124 can be sequentially positioned away from the display panel 200. Specifically, the diffuser 123 can be positioned on the light-emitting side of the light-emitting substrate 110, the composite film 124 can be positioned on the side of the diffuser 123 away from the light-emitting substrate 110, the scattering layer 121 and the color conversion layer 122 can be positioned on the side of the diffuser 123 closer to the light-emitting substrate 110, and the display panel 200 can be positioned on the side of the composite film 124 away from the light-emitting substrate 110.

[0094] The scattering layer 121 blurs the light emitted by the light-emitting substrate 110 and provides support for the color conversion layer 122, the diffuser 123, and the composite film 124. The color conversion layer 122, when stimulated by light of a certain color emitted by the light-emitting substrate 110, converts that light into white light, thereby improving the utilization of the light energy of the light-emitting substrate 110. The diffuser 123 evens out the light passing through it. The composite film 124 improves the light extraction efficiency of the light-emitting substrate 110, thereby increasing the brightness of the display device 1000.

[0095] It should be noted that the composite film 124 may include a brightness enhancement film (BEF) and a dual brightness enhancement film (DBEF), which utilizes the principles of total reflection, refraction, and polarization to increase the light flux within a certain angle range to improve the brightness of the display device 1000.

[0096] For example, as shown in FIG3 , the light-emitting substrate 110 emits blue light. The color conversion layer 122 may include a red quantum dot material, a green quantum dot material, and a transparent material. When the blue light emitted by the light-emitting substrate 110 passes through the red quantum dot material, it is converted into red light; when the blue light passes through the green quantum dot material, it is converted into green light; the blue light can directly pass through the transparent material; then, the blue light, red light, and green light are mixed and superimposed in a certain proportion to present white light. Finally, the scattering layer 121 and the diffuser 123 can modulate the incident light of different propagation directions and emit it in a more uniform state, thereby improving the light shadow produced by the light-emitting substrate 110 and improving the display quality of the display device 1000.

[0097] In some embodiments, referring to FIG3 , the display device 1000 further includes a support frame 400 that surrounds the periphery of the light-emitting substrate 110 to provide protection. Furthermore, the support frame 400 is provided with two support protrusions 410 : one support protrusion 410 is located between the display panel 200 and the cover plate 300 , and the other support protrusion 410 is located between the optical film 120 and the light-emitting substrate 110 , thereby providing support for the cover plate 300 and the optical film 120 , respectively.

[0098] In some embodiments, referring to FIG. 3 and FIG. 4 , the light emitting substrate 110 includes a driving backplane 10 , a plurality of electronic components 20 and a surface electrode 30 .

[0099] The light-emitting substrate 110 includes a light-emitting area A and a peripheral area B located on at least one side of the light-emitting area A. The light-emitting area A can be configured to house an electronic component 20. For example, the electronic component 20 is located in the light-emitting area A. The peripheral area B can be configured to connect to a circuit board. For example, the peripheral area B is provided with binding electrodes P, and the circuit board is connected to the light-emitting substrate 110 via the binding electrodes P.

[0100] In some examples, as shown in FIG. 3 and FIG. 4 , the electronic component 20 may include a light emitting device 21 and a microchip 22 .

[0101] As shown in FIG3 and FIG4 , the light emitting device 21 may include one or more of a micro light emitting diode (Micro Light Emitting Diode, referred to as Micro LED) and / or a sub-millimeter light emitting diode (Mini Light Emitting Diode, referred to as Mini LED).

[0102] It should be noted that the size (e.g., length) of a Micro LED is less than 50 microns, for example, 10 to 50 microns. The size (e.g., length) of a Mini LED is 50 to 150 microns, for example, 80 to 120 microns.

[0103] As shown in FIG3 and FIG4 , the microchip 22 may include a sensor chip and / or a driver chip. The sensor chip may be, for example, a light sensor chip or a heat sensor chip, etc. The driver chip is used to provide a driving signal to the light emitting device 21 .

[0104] In some examples, referring to FIG. 3 , the driving backplane 10 may include a substrate 101 and a circuit layer 102 , where the circuit layer 102 is disposed on the substrate 101 .

[0105] It should be noted that the substrate 101 can be a rigid substrate or a flexible substrate. The material of the rigid substrate includes at least one of glass, quartz, sapphire, ceramic, and polymethyl methacrylate (PMMA). The material of the flexible substrate includes at least one of epoxy resin, triazine, silicone resin, and polyimide.

[0106] The circuit layer 102 includes a third electrode 103. The electronic component 20 can be fixed to the driving backplane 10 via the third electrode 103 and electrically connected to the third electrode 103 to receive the first voltage signal. The radial dimension of the third electrode 103 can be 10 μm to 100 μm. For example, the radial dimension of the third electrode 103 is any one of 10 μm, 20 μm, 30 μm, 40 μm, 50 μm, 60 μm, 70 μm, 80 μm, 90 μm, and 100 μm.

[0107] In some examples, referring to Figures 3 and 4 , the surface electrode 30 is disposed on a side of the electronic component 20 (light-emitting device 21) away from the driver backplane 10 and is connected to the electronic component 20 (light-emitting device 21) to receive a second voltage signal. The first voltage signal and the second voltage signal are different, thereby providing a power supply voltage to the electronic component 20.

[0108] Here, the surface electrode 30 can, for example, cover the light-emitting area A and extend to the peripheral area B. In this manner, all electronic components 20 can be connected to the surface electrode 30 , and the surface electrode 30 can be easily connected to the driving backplane 10 to receive the second voltage signal provided by the driving backplane 10 , resulting in a simple process and low cost.

[0109] It should be noted that, referring to Figures 44 and 45, in the at least two light-emitting devices 21 connected in series, the surface electrode 30 may include a plurality of sub-electrodes insulated from each other, and the at least two light-emitting devices 21 connected in series are respectively connected to different sub-electrodes, and the plurality of sub-electrodes corresponding to the at least two light-emitting devices 21 connected in series are arranged separately from each other.

[0110] In some embodiments, as shown in Figures 3, 43, and 44, the light-emitting substrate 110 further includes a plurality of spaced-apart encapsulation portions 50, which are disposed on the side of the surface electrode 30 away from the driver backplane 10. The orthographic projection of one electronic component 20 (e.g., light-emitting device 21) on the driver backplane 10 is located within the orthographic projection of one encapsulation portion 50 on the driver backplane 10. In other words, one encapsulation portion 50 encapsulates one electronic component 20 to protect it and improve the waterproofness, corrosion resistance, and light extraction efficiency of the light-emitting substrate 110.

[0111] It should be noted that the packaging portion 50 can be formed by spraying a high thixotropic glue onto the electronic component 20 using a dispensing machine and then undergoing a curing process. In addition, the shape of the packaging portion 50 can be a spherical segment or a semi-ellipsoidal sphere, which is not specifically limited in the present embodiment.

[0112] Among them, the material of the packaging part 50 includes resin and / or inorganic material, and the inorganic material includes at least one of niobium pentoxide, titanium oxide and silicon oxide. It should be understood that for different types of electronic components 20, the material of the packaging part 50 can be adaptively adjusted. For example, the electronic component 20 is an optical component (such as a light-emitting device 21), and the packaging part 50 uses a transparent material. The transparent material may include transparent silicone or transparent resin. The electronic component 20 is a non-optical component (such as a driver chip), and the material of the packaging part 50 has no requirements for light transmittance, and a transparent material, a reflective material or a light-absorbing material can be selected. The reflective material may include at least one of white ink, white resin and silicone white glue, and the light-absorbing material may include at least one of black ink, black resin and silicone black glue.

[0113] In some embodiments, as shown in Figures 3, 43 and 44, the light-emitting substrate 110 also includes an auxiliary electrode 40, which is arranged on the side of the surface electrode 30 away from the driving backplane 10 and is connected to the surface electrode 30 to reduce the resistance of transmitting the second voltage signal, reduce the voltage drop, and reduce the difference in the second voltage signal of the light-emitting devices 21 at different positions, thereby improving the brightness uniformity of the light-emitting substrate 110.

[0114] The auxiliary electrode 40 may be provided with a plurality of openings 401, each opening 401 exposing one light-emitting device 21, and the shape of the orthographic projection of the opening 401 on the driving backplane 10 is the same as the shape of the orthographic projection of the light-emitting device 21 on the driving backplane 10. In this manner, the auxiliary electrode 40 can block light between the light-emitting devices 21 without the need for a light-shielding layer, thereby reducing the thickness of the display device 1000.

[0115] For example, referring to Figures 4, 43, and 44, the auxiliary electrode 40 can cover the area between the multiple packaging parts 50, that is, the boundary of the orthographic projection of the opening 401 of the auxiliary cathode 40 on the driver backplane 10 is located between the light-emitting device 21 and the boundary of the orthographic projection of the packaging part 50 on the driver backplane 10. Of course, as shown in Figure 3, the opening 401 of the auxiliary electrode 40 can also expose the packaging part 50. For example, the distance between the boundary of the opening 401 of the auxiliary electrode 40 and the boundary of the packaging part 50 is less than or equal to the process limit value, and the light between the light-emitting devices 21 can still be effectively blocked.

[0116] It should be noted that the auxiliary electrode 40 can be made of a light-shielding conductive material. Exemplarily, the auxiliary electrode 40 material includes a light-shielding metal, such as at least one of titanium, aluminum, chromium, platinum, and gold. Furthermore, the auxiliary electrode 40 can be formed using a digital exposure process to achieve high-precision morphology control.

[0117] However, in the related art, the preparation process of the light-emitting device is complicated, the production efficiency and yield are low, and the preparation cost is high.

[0118] As shown in FIG. 5 to FIG. 8 , some embodiments of the present disclosure provide a light-emitting device 21 , which includes a first electrode 210 , a light-emitting stacked layer 220 , a second electrode 230 and a passivation layer 240 .

[0119] As shown in FIG5 , the first electrode 210 of the light-emitting device 21 is connected to the surface electrode 30 (see FIG3 ). The first electrode 210 is the light-emitting side of the light-emitting device 21 and has a transmittance greater than or equal to 99%. Exemplarily, the material of the first electrode 210 includes a transparent metal material, such as indium tin oxide and / or indium zinc oxide.

[0120] It should be noted that the thickness of the first electrode 210 is 0.1 μm to 0.6 μm. In some examples, as shown in FIG5 , the thickness of the first electrode 210 is 0.1 μm to 0.3 μm. In other examples, as shown in FIG7 , the thickness of the first electrode 210 is 0.2 μm to 0.6 μm. For example, the thickness of the first electrode 210 is any one of 0.1 μm, 0.15 μm, 0.2 μm, 0.25 μm, 0.3 μm, 0.35 μm, 0.4 μm, 0.45 μm, 0.5 μm, 0.55 μm, and 0.6 μm.

[0121] As shown in FIG5 , the light-emitting stacked layer 220 is disposed on one side of the first electrode 210 (the upper side in FIG5 ) and is connected to the first electrode 210. Specifically, the light-emitting stacked layer 220 is disposed on the side of the first electrode 210 away from the planar electrode 30 (see FIG3 ). The light-emitting stacked layer 220 includes a quantum well layer 222, and a first semiconductor doping layer 221 and a second semiconductor doping layer 223 disposed on opposite sides of the quantum well layer 222.

[0122] Here, the thickness of the first semiconductor doping layer 221 and the second semiconductor doping layer 223 may be 0.5 μm to 2 μm. For example, the thickness of the first semiconductor doping layer 221 may be any one of 0.5 μm, 0.8 μm, 1 μm, 1.1 μm, 1.3 μm, 1.5 μm, 1.8 μm, and 2 μm. For example, the thickness of the second semiconductor doping layer 223 may be any one of 0.5 μm, 0.8 μm, 1 μm, 1.1 μm, 1.3 μm, 1.5 μm, 1.8 μm, and 2 μm.

[0123] It should be noted that one of the first semiconductor doping layer 221 and the second semiconductor doping layer 223 is an N-type doped semiconductor layer, and the other is a P-type doped semiconductor layer. For example, the material of the first semiconductor doping layer 221 is an N-type doped semiconductor layer, and the material of the second semiconductor doping layer 223 is P-type doped gallium nitride. The material of the quantum well layer 222 includes gallium nitride and / or indium gallium nitride.

[0124] As shown in Figure 5, the second electrode 230 is provided on a side of the light-emitting stack layer 220 away from the first electrode 210. The second electrode 230 is configured to be connected to the driving backplane 10 (see Figure 3), that is, the second electrode 230 of the light-emitting device 21 is connected to the third electrode 103 (see Figure 3) of the driving backplane 10 (see Figure 3). The material of the second electrode 230 includes a metal material. Exemplarily, the material of the second electrode 230 includes at least one of nickel, gold, copper and tin. For example, the second electrode 230 includes a stacked nickel layer, a gold layer and a tin layer, and the thicknesses of the nickel layer, the gold layer and the tin layer are 0.5μm to 2μm, 1μm to 2μm and 0.2μm to 1μm, respectively.

[0125] It should be noted that the radial dimension of the second electrode 230 is smaller than the radial dimension of the third electrode 103 to facilitate alignment and connection between the light-emitting device 21 and the third electrode 103. Exemplarily, the radial dimension of the second electrode 230 is 5 μm to 20 μm. For example, the radial dimension of the second electrode 230 is any one of 5 μm, 8 μm, 10 μm, 11 μm, 13 μm, 15 μm, 18 μm, and 20 μm.

[0126] As shown in FIG5 , the passivation layer 240 includes a first passivation portion 241 and a second passivation portion 242. The first passivation portion 241 covers the surface of the light-emitting stacked layer 220 away from the first electrode 210. The first passivation portion 241 is provided with a first via hole H1, through which the second electrode 230 is connected to the light-emitting stacked layer 220. The second passivation portion 242 covers the sidewalls of the light-emitting stacked layer 220 and extends to the side of the light-emitting stacked layer 220 away from the second electrode 230. The distance between the portion of the second passivation portion 242 extending beyond the light-emitting stacked layer 220 and the light-emitting stacked layer 220 is greater than the thickness of the first electrode 210.

[0127] The material of the passivation layer 240 includes an inorganic material. For example, the material of the passivation layer 240 includes at least one of silicon oxide, silicon nitride, and aluminum oxide. For example, the passivation layer 240 may include a stacked silicon oxide layer and a silicon nitride layer.

[0128] It should be noted that the thickness of the passivation layer 240 is 0.2 μm to 0.5 μm. For example, the thickness of the passivation layer 240 is any one of 0.2 μm, 0.25 μm, 0.3 μm, 0.35 μm, 0.4 μm, 0.45 μm and 0.5 μm.

[0129] In this case, during the preparation process of multiple light-emitting devices 21, the light-emitting stack layer 220 and the first electrode 210 of the multiple light-emitting devices 21 can be transferred to the same substrate (the second substrate 520 mentioned below) through the adhesive layer (the second adhesive layer 570 mentioned below); then, the passivation layer 240 and the second electrode 230 are prepared at the same time, thereby improving production efficiency and product yield and reducing preparation costs. The specific process can be referred to below.

[0130] 5 , the second passivation portion 242 covers the sidewalls of the light emitting stack 220 and extends to a side of the light emitting stack 220 away from the second electrode 230 . Furthermore, the second passivation portion 242 is located on a side of the first electrode 210 close to the second electrode 230 .

[0131] It should be noted that the first electrode 210 can be formed separately, or can be the portion connecting the above-mentioned surface electrode 3 and the light-emitting stacked layer 220 , which is not specifically limited in the embodiment of the present disclosure.

[0132] In other embodiments, as shown in Figures 6 and 7, the second passivation portion 242 covers the sidewalls of the light-emitting stacked layer 220 and the first electrode 210, and extends to the side of the first electrode 210 away from the second electrode 230. In this case, the light-emitting stacked layer 220 and the first electrode 210 can be patterned by etching in one step, which simplifies the process.

[0133] In some embodiments, referring to FIG8 , the light-emitting device 21 further includes a connecting electrode 250, which is disposed on a side of the first electrode 210 away from the second electrode 230. Furthermore, the connecting electrode 250 covers the first electrode 210 and extends to a surface of the second passivation portion 242 away from the first passivation portion 241. Here, the boundary of the connecting electrode 250 may be flush with the boundary of the passivation layer 240, for example.

[0134] It should be noted that the transmittance of the connecting electrode 250 is greater than or equal to 99%. Exemplarily, the material of the connecting electrode 250 includes a transparent metal material, for example, the material of the connecting electrode 250 includes indium tin oxide and / or indium zinc oxide. Furthermore, the connecting electrode 250 can be formed separately or as the portion connecting the surface electrode 3 and the first electrode 210 mentioned above, and the present disclosure does not specifically limit this.

[0135] As shown in FIG. 9 to FIG. 11 , some other embodiments of the present disclosure provide a light-emitting device 21 , which includes a first electrode 210 , a light-emitting stacked layer 220 , a second electrode 230 and a passivation layer 240 .

[0136] As shown in FIG9 , the first electrode 210 of the light-emitting device 21 is connected to the surface electrode 30 (see FIG3 ). The first electrode 210 is the light-emitting side of the light-emitting device 21 and has a transmittance greater than or equal to 99%. Exemplarily, the material of the first electrode 210 includes a transparent metal material, such as indium tin oxide and / or indium zinc oxide.

[0137] The thickness of the first electrode 210 is 0.1 μm to 0.6 μm. For example, the thickness of the first electrode 210 is any one of 0.1 μm, 0.15 μm, 0.2 μm, 0.25 μm, 0.3 μm, 0.35 μm, 0.4 μm, 0.45 μm, 0.5 μm, 0.55 μm, and 0.6 μm.

[0138] As shown in FIG9 , the light-emitting stacked layer 220 is disposed on one side of the first electrode 210 (the upper side in FIG9 ) and is connected to the first electrode 210. Specifically, the light-emitting stacked layer 220 is disposed on the side of the first electrode 210 away from the planar electrode 30 (see FIG3 ). The boundary of the light-emitting stacked layer 220 is retracted relative to the boundary of the first electrode 210. The light-emitting stacked layer 220 includes a quantum well layer 222, and a first semiconductor doping layer 221 and a second semiconductor doping layer 223 disposed on opposite sides of the quantum well layer 222.

[0139] It should be noted that one of the first semiconductor doping layer 221 and the second semiconductor doping layer 223 is an N-type doped semiconductor layer, and the other is a P-type doped semiconductor layer. For example, the material of the first semiconductor doping layer 221 is an N-type doped semiconductor layer, and the material of the second semiconductor doping layer 223 is P-type doped gallium nitride. The material of the quantum well layer 222 includes gallium nitride and / or indium gallium nitride.

[0140] As shown in Figure 9, the second electrode 230 is provided on a side of the light-emitting stack layer 220 away from the first electrode 210. The second electrode 230 is configured to connect to the driving backplane 10 (see Figure 3), that is, the second electrode 230 of the light-emitting device 21 is connected to the third electrode 103 (see Figure 3) of the driving backplane 10 (see Figure 3). The material of the second electrode 230 includes a metal material. Exemplarily, the material of the second electrode 230 includes at least one of nickel, gold, copper and tin. For example, the second electrode 230 includes a stacked nickel layer, a gold layer and a tin layer, and the thicknesses of the nickel layer, the gold layer and the tin layer are 0.5μm to 2μm, 1μm to 2μm and 0.2μm to 1μm, respectively.

[0141] It should be noted that the radial dimension of the second electrode 230 is smaller than the radial dimension of the third electrode 103 to facilitate alignment and connection between the light-emitting device 21 and the third electrode 103. Exemplarily, the radial dimension of the second electrode 230 is 5 μm to 20 μm. For example, the radial dimension of the second electrode 230 is any one of 5 μm, 8 μm, 10 μm, 11 μm, 13 μm, 15 μm, 18 μm, and 20 μm.

[0142] As shown in FIG9 , the passivation layer 240 includes a first passivation portion 241 and a second passivation portion 242. The first passivation portion 241 covers the surface of the light-emitting stacked layer 220 away from the first electrode 210. The first passivation portion 241 is provided with a first via hole H1, through which the second electrode 230 is connected to the light-emitting stacked layer 220. The second passivation portion 242 covers the sidewalls of the light-emitting stacked layer 220, and at least a portion of the edge of the first electrode 210 extends beyond the second passivation portion 242.

[0143] The material of the passivation layer 240 includes an inorganic material. For example, the material of the passivation layer 240 includes at least one of silicon oxide, silicon nitride, and aluminum oxide. For example, the passivation layer 240 may include a stacked silicon oxide layer and a silicon nitride layer.

[0144] It should be noted that the thickness of the passivation layer 240 is 0.2 μm to 0.5 μm. For example, the thickness of the passivation layer 240 is any one of 0.2 μm, 0.25 μm, 0.3 μm, 0.35 μm, 0.4 μm, 0.45 μm and 0.5 μm.

[0145] In this case, during the preparation process of multiple light-emitting devices 21, the light-emitting stack layer 220 and the first electrode 210 of the multiple light-emitting devices 21 can be transferred to the same substrate (the second substrate 520 mentioned below) through the adhesive layer (the second adhesive layer 570 mentioned below), and the light-emitting stack layer 220 and the first electrode 210 can be etched and patterned separately; then, the passivation layer 240 and the second electrode 230 are prepared at the same time, thereby improving production efficiency and product yield and reducing preparation costs. The specific process can be referred to below.

[0146] In addition, during the preparation of two light-emitting devices 21 connected in series, the second electrode 230 of one can be connected to the portion of the first electrode 210 of the other that extends beyond the passivation layer 240, so as to simplify the preparation process of the light-emitting devices 21 connected in series and reduce production costs.

[0147] In some examples, as shown in FIG9 , the circumferential boundaries of the first electrode 210 all extend beyond the passivation layer 240. That is, the second passivation portion 242 is located on the edge portion of the first electrode 210 that extends beyond the light-emitting stacked layer 220, and the outer boundary of the second passivation portion 242 is retracted relative to the boundary of the first electrode 210. In this way, during the preparation process of the light-emitting device 21, the passivation layer 240 does not contact the substrate (the second substrate 520 mentioned below), facilitating separation of the light-emitting device 21 from the substrate (the second substrate 520 mentioned below).

[0148] In other examples, as shown in FIG. 10 and FIG. 11 , a portion of the circumferential boundary of the first electrode 210 extends beyond the passivation layer 240 .

[0149] Exemplarily, the second passivation portion 242 includes a first sub-portion 2421 and a second sub-portion 2422 connected circumferentially along the light-emitting stack layer 220. The edge portion of the first electrode 210 corresponding to the first sub-portion 2421 does not extend beyond the passivation layer 240, and the edge portion of the first electrode 210 corresponding to the second sub-portion 2422 extends beyond the passivation layer 240, that is, extends beyond the second passivation portion 242.

[0150] The first sub-portion 2421 covers the sidewalls of the light-emitting stacked layer 220 and the sidewalls of the first electrode 210, and an end of the first sub-portion 2421 away from the second electrode 230 may be flush with a surface of the first electrode 210 away from the second electrode 230. The second sub-portion 2422 covers the sidewalls of the light-emitting stacked layer 220 and is located on the edge of the first electrode 210 that extends beyond the light-emitting stacked layer 210.

[0151] At this time, among the two light-emitting devices 21 connected in series, the second electrode 230 of one may be connected to the portion of the first electrode 210 of the other that extends beyond the passivation layer 240 in various ways.

[0152] 12 , at least two adjacent light emitting devices 21 include a first light emitting device 201 and a second light emitting device 202. The passivation layer 240 of the first light emitting device 201 is a first passivation layer 2410, and the passivation layer 240 of the second light emitting device 202 is a second passivation layer 2420.

[0153] 9 , 10 , and 12 , the second passivation portion 242 of the first passivation layer 2410 is retracted relative to the boundary of the first electrode 210. The second passivation portion 242 of the second passivation layer 2420 includes a first sub-portion 2421 and a second sub-portion 2422. The first sub-portion 2421 covers the sidewalls of the light-emitting stacked layer 220 and the sidewalls of the first electrode 210. The second sub-portion 2422 covers the sidewalls of the light-emitting stacked layer 220 and is located at the edge of the first electrode 210 that extends beyond the light-emitting stacked layer 220.

[0154] On this basis, the first light-emitting device 201 and the second light-emitting device 202 both include a reflective layer 270, which is disposed on a side of the passivation layer 240 away from the light-emitting stack layer 220. The first subsection 2421 of the second light-emitting device 202 faces the first light-emitting device 201, and the reflective layer 270 of the second light-emitting device 202 covers the first subsection 2421 and is connected to the portion of the first electrode 210 of the first light-emitting device 201 that extends beyond the passivation layer 240.

[0155] In addition, the light emitting substrate 110 further includes a first planar layer 60 , which is disposed on a side of the second electrode 230 close to the light emitting stacked layer 220 . For example, the first planar layer 60 is disposed between the second electrode 230 and the reflective layer 270 .

[0156] At this time, as shown in FIG44 , the light-emitting devices 21 connected in series can be connected to the driving backplane 10 to simplify the process and reduce the manufacturing cost.

[0157] In other embodiments, as shown in FIG13 , at least two adjacent light-emitting devices 21 may be a third light-emitting device 203 and a fourth light-emitting device 204. The passivation layer 240 of the third light-emitting device 203 may be a third passivation layer 2430, and the passivation layer 240 of the fourth light-emitting device 204 may be a fourth passivation layer 2440.

[0158] 9 , 11 , and 13 , the second passivation portion 242 of the third passivation layer 2430 is retracted relative to the boundary of the first electrode 210. The second passivation portion 242 of the fourth passivation layer 2440 includes a first sub-portion 2421 and a second sub-portion 2422. The first sub-portion 2421 covers the sidewalls of the light-emitting stacked layer 220 and the sidewalls of the first electrode 210. The second sub-portion 2422 covers the sidewalls of the light-emitting stacked layer 220 and is located at the edge of the first electrode 210 that extends beyond the light-emitting stacked layer 220.

[0159] On this basis, the light emitting substrate 110 further includes a first flat layer 60 , which is disposed on a side of the second electrode 230 close to the light emitting stacked layer 220 . For example, the first flat layer 60 is disposed between the second electrode 230 and the reflective layer 270 .

[0160] The first planar layer 60 is provided with a third via hole H3 , and the second electrode 230 of the third light emitting device 203 is connected to the portion of the first electrode 210 of the fourth light emitting device 204 extending beyond the passivation layer 240 through the third via hole H3 .

[0161] At this time, as shown in FIG45 , the light-emitting devices 21 connected in series can be connected to the driving backplane 10 to simplify the process and reduce the manufacturing cost.

[0162] As shown in FIG. 14 , some other embodiments of the present disclosure provide a light-emitting device 21 , which includes a first electrode 210 , a light-emitting stacked layer 220 , a second electrode 230 and a passivation layer 240 .

[0163] As shown in FIG14 , the first electrode 210 of the light-emitting device 21 is connected to the surface electrode 30 (see FIG3 ). The first electrode 210 includes an electrode body 211 and a plurality of bonding protrusions 212. The plurality of bonding protrusions 212 are spaced apart on one side of the electrode body 211, adjacent to the surface electrode 30 (see FIG3 ). The first electrode 210 is the light-emitting side of the light-emitting device 21, and the transmittance of the first electrode 210 is greater than or equal to 99%. Exemplarily, the material of the first electrode 210 includes a transparent metal material, for example, indium tin oxide and / or indium zinc oxide.

[0164] It should be noted that the thickness of the first electrode 210 is 0.1 μm to 0.6 μm. For example, the thickness of the electrode body 211 is 0.1 μm to 0.3 μm, and the thickness of the bonding bump 212 is 0.1 μm to 0.3 μm. For example, the thickness of the electrode body 211 and / or the bonding bump 212 is any one of 0.1 μm, 0.15 μm, 0.2 μm, 0.25 μm, and 0.3 μm.

[0165] Furthermore, the arrangement of the plurality of bonding protrusions 212 is not unique. For example, the plurality of bonding protrusions 212 can be arranged in an array. Furthermore, the distances between the plurality of bonding protrusions 212 are substantially equal. In this way, during the fabrication of the light-emitting device 21, the first electrodes 210 of the plurality of light-emitting devices 21 can be transferred to the same substrate via bonding, and the bonding strength of the first electrodes 210 of the plurality of light-emitting devices 21 is substantially the same, facilitating the dissociation of the light-emitting device 21.

[0166] It should be noted that the ratio of the area of ​​the orthographic projection of the bonding protrusion 212 on the driver backplane 10 to the light-emitting area of ​​the light-emitting device 21 is 0.1 to 0.8, the bonding strength meets the requirements, and it is easy to dissociate. Exemplarily, the radial dimension of the bonding protrusion 212 is 0.1 μm to 0.8 μm. For example, the radial dimension of the bonding protrusion 212 is any one of 0.1 μm, 0.2 μm, 0.3 μm, 0.4 μm, 0.5 μm, 0.6 μm, 0.7 μm, and 0.8 μm.

[0167] As shown in FIG14 , the light-emitting stacked layer 220 is disposed on a side of the first electrode 210 away from the bonding protrusion 212 and is connected to the electrode body 211. Specifically, the light-emitting stacked layer 220 is disposed on a side of the first electrode 210 away from the planar electrode 30. The light-emitting stacked layer 220 includes a quantum well layer 222, and a first semiconductor doping layer 221 and a second semiconductor doping layer 223 disposed on opposite sides of the quantum well layer 222.

[0168] It should be noted that one of the first semiconductor doping layer 221 and the second semiconductor doping layer 223 is an N-type doped semiconductor layer, and the other is a P-type doped semiconductor layer. For example, the material of the first semiconductor doping layer 221 is an N-type doped semiconductor layer, and the material of the second semiconductor doping layer 223 is P-type doped gallium nitride. The material of the quantum well layer 222 includes gallium nitride and / or indium gallium nitride.

[0169] As shown in Figure 14, the second electrode 230 is provided on a side of the light-emitting stack layer 220 away from the first electrode 210. The second electrode 230 is configured to connect to the driving backplane 10 (see Figure 3), that is, the second electrode 230 of the light-emitting device 21 is connected to the third electrode 103 (see Figure 3) of the driving backplane 10 (see Figure 3). The material of the second electrode 230 includes a metal material. Exemplarily, the material of the second electrode 230 includes at least one of nickel, gold, copper and tin. For example, the second electrode 230 includes a stacked nickel layer, a gold layer and a tin layer, and the thicknesses of the nickel layer, the gold layer and the tin layer are 0.5μm to 2μm, 1μm to 2μm and 0.2μm to 1μm, respectively.

[0170] It should be noted that the radial dimension of the second electrode 230 is smaller than the radial dimension of the third electrode 103 to facilitate alignment and connection between the light-emitting device 21 and the third electrode 103. Exemplarily, the radial dimension of the second electrode 230 is 5 μm to 20 μm. For example, the radial dimension of the second electrode 230 is any one of 5 μm, 8 μm, 10 μm, 11 μm, 13 μm, 15 μm, 18 μm, and 20 μm.

[0171] As shown in FIG14 , the passivation layer 240 includes a first passivation portion 241 and a second passivation portion 242. The first passivation portion 241 covers the surface of the light-emitting stacked layer 220 away from the first electrode 210. The first passivation portion 241 is provided with a first via hole H1, through which the second electrode 230 is connected to the light-emitting stacked layer 220. The second passivation portion 242 covers at least a portion of the sidewalls of the light-emitting stacked layer 220 and the electrode body 211.

[0172] For example, the second passivation portion 242 covers the sidewalls of the light emitting stacked layer 220 and the electrode body 211 , and one end of the second passivation portion 242 away from the first passivation portion 241 is substantially flush with the surface of the electrode body 211 away from the first passivation portion 241 .

[0173] For another example, as shown in FIG14 , the second passivation portion 242 covers the side walls of the light-emitting stacked layer 220 and part of the side walls of the electrode body 211 . The second passivation portion 242 is away from one end of the first passivation portion 241 and is located between the two surfaces of the electrode body 211 away from and close to the first passivation portion 241 .

[0174] The material of the passivation layer 240 includes an inorganic material. For example, the material of the passivation layer 240 includes at least one of silicon oxide, silicon nitride, and aluminum oxide. For example, the passivation layer 240 may include a stacked silicon oxide layer and a silicon nitride layer.

[0175] It should be noted that the thickness of the passivation layer 240 is 0.2 μm to 0.5 μm. For example, the thickness of the passivation layer 240 is any one of 0.2 μm, 0.25 μm, 0.3 μm, 0.35 μm, 0.4 μm, 0.45 μm and 0.5 μm.

[0176] In this case, during the preparation process of multiple light-emitting devices 21, the light-emitting stack layer 220 and the first electrode 210 of the multiple light-emitting devices 21 can be transferred to the same substrate (the second substrate 520 mentioned below) by bonding; then, the passivation layer 240 and the second electrode 230 are prepared at the same time, thereby improving production efficiency and product yield and reducing preparation costs. The specific process can be referred to below.

[0177] Below, some embodiments of the present disclosure are schematically described by taking the light-emitting device 21 in which the second passivation portion 242 covers the side walls of the light-emitting stack layer 220 and the first electrode 210, and extends to the side of the first electrode 210 away from the second electrode 230 as an example. However, the embodiments of the present disclosure are not limited to this, and any other light-emitting device 21 mentioned above can also be considered, as long as the same technical concept is applied.

[0178] In some embodiments, referring to FIG7 , the boundary between the two opposing surfaces of the light-emitting stack 220 and the first electrode 210 is connected to form a slope having a slope angle greater than or equal to 60°. In this case, the larger slope angle of the side of the light-emitting stack 220 allows the second electrode 230 to have a larger contact area with the light-emitting stack 220, thereby increasing the light-emitting area. Simultaneously, the passivation layer 240 has a larger contact area with the top surface of the light-emitting stack 220, providing better coverage and adhesion.

[0179] In some embodiments, referring to FIG6 , the light-emitting device 21 further includes a hard mask layer 260, which is disposed between a surface of the light-emitting stack 220 away from the first electrode 210 and the passivation layer 240. The hard mask layer 260 is provided with a second via hole H2, and the second electrode 230 is connected to the light-emitting stack 220 through the first via hole H1 and the second via hole H2.

[0180] In this case, the sidewall slope angle of the light-emitting stacked layer 220 can be even greater. For example, the boundary between the two opposing surfaces of the light-emitting stacked layer 220 and the first electrode 210 is connected to form a slope with a slope angle greater than or equal to 80°. This further increases the slope angle of the side of the light-emitting stacked layer 220, increasing the contact area between the second electrode 230 and the light-emitting stacked layer 220, thereby further increasing the light-emitting area. At the same time, the passivation layer 240 has a larger contact area with the upper surface of the light-emitting stacked layer 220, providing better coverage and adhesion.

[0181] It should be noted that the hard mask layer 260 can be a single-layer structure. Alternatively, it can be a multi-layer structure. For example, referring to Figures 6 and 39 , during the etching process, the hard mask layer 260 can include an indium tin oxide layer 261, a silicon oxide layer 262, and a photoresist layer 263 (not shown in Figure 6 ) stacked in sequence, with the indium tin oxide layer 261 being adjacent to the light-emitting stack layer 220. After the etching is completed, the photoresist layer 263 is removed, and holes are opened in the silicon oxide layer 262.

[0182] FIG. 15 is a diagram illustrating detection results using a transmission electron microscope according to some embodiments, and FIG. 16 is a diagram illustrating detection results using a scanning electron microscope according to some embodiments.

[0183] In some embodiments, referring to Figures 15 and 16 , a step structure S is formed on the sidewalls of the light-emitting stacked layer 220, and the circumferential boundary of the light-emitting stacked layer 220 is stepped inward from the second electrode 230 toward the first electrode 210. The step structure S can be formed by wet etching the sidewalls of the light-emitting stacked layer 220 and the first electrode 210, removing crystals that expose non-polar surfaces on the sidewalls of the light-emitting stacked layer 220, thereby improving the luminous efficiency of the light-emitting device 21.

[0184] Exemplarily, the light-emitting stacked layer 220 includes a quantum well layer 222, and a first semiconductor doping layer 221 and a second semiconductor doping layer 223 disposed on opposite sides of the quantum well layer 222. On this basis, the first semiconductor doping layer 221, the quantum well layer 222, and the second semiconductor doping layer 223 each form a step.

[0185] It should be noted that, since the doping concentrations at different positions in the first semiconductor doping layer 221 and the second semiconductor doping layer 223 may be different, each step S may also include multiple sub-steps, which is not specifically limited in the embodiment of the present disclosure.

[0186] In some embodiments, referring to FIG. 5 to FIG. 14 , the light emitting device 21 further includes a reflective layer 270 . The reflective layer 270 is disposed on a side of the passivation layer 240 away from the light emitting stack layer 220 .

[0187] In some examples, as shown in FIG14 , the reflective layer 270 is provided with a fourth via hole H4, and the second electrode 230 is connected to the light-emitting stacked layer 220 through the fourth via hole H4 and the first via hole H1. In other examples, as shown in FIG5 , the reflective layer 270 covers the first via hole H1 and extends into the first via hole H7 to connect to the light-emitting stacked layer 220. The second electrode 230 is connected to the light-emitting stacked layer 220 through the reflective layer 270.

[0188] It should be noted that the material of the reflective layer 270 includes a reflective metal. Exemplarily, the material of the reflective layer 270 includes at least one of titanium, platinum, and aluminum. For example, the reflective layer 270 includes a stacked structure of a titanium layer, an aluminum layer, and a titanium layer.

[0189] In some embodiments, referring to FIG3 , the light-emitting substrate 110 further includes a first planar layer 60 , which is disposed on a side of the second electrode 230 that is adjacent to the light-emitting stacked layer 220 . For example, the first planar layer 60 is disposed between the second electrode 230 and the reflective layer 270 to provide a planarizing effect, thereby facilitating improved height uniformity across the plurality of light-emitting devices 21 .

[0190] Some embodiments of the present disclosure further provide a method for preparing a light-emitting device 21 , as shown in FIG. 17 , including steps S100 to S600 .

[0191] S100: preparing a transfer epitaxial wafer 500.

[0192] In the above steps, referring to FIG. 29 and FIG. 30 , the transfer epitaxial wafer 500 includes a first substrate 510 , a light-emitting stacked layer 220 and a first electrode 210 , and the first electrode 210 and the light-emitting stacked layer 220 are sequentially stacked on the first substrate 510 .

[0193] It should be noted that the material of the first substrate 510 includes semiconductor material. For example, the material of the first substrate 510 includes at least one of single crystal silicon, polycrystalline silicon, silicon carbide, sapphire, gallium arsenide, aluminum nitride and zinc oxide.

[0194] In some embodiments, referring to FIG. 18 , the above-mentioned S100 includes S110 to S150 .

[0195] S110 : forming an epitaxial wafer 500 ′ on a third substrate 530 .

[0196] In the above steps, as shown in FIG29 , the epitaxial wafer 500 ′ includes a light-emitting stacked layer 220, which includes a quantum well layer 222, and a first semiconductor doping layer 221 and a second semiconductor doping layer 223 disposed on opposite sides of the quantum well layer 222. The epitaxial wafer 500 ′ may further include a buffer layer 540 disposed between the third substrate 530 and the light-emitting stacked layer 220.

[0197] It should be noted that the material of the third substrate 530 includes a semiconductor material. For example, the material of the third substrate 530 includes at least one of single crystal silicon, polycrystalline silicon, silicon carbide, sapphire, gallium arsenide, aluminum nitride, and zinc oxide. The material of the buffer layer 540 may include gallium nitride.

[0198] Furthermore, as shown in FIG29 , after forming the epitaxial wafer 500 ′, a fourth electrode 550 may be formed on a side of the epitaxial wafer 500 ′ away from the third substrate 530. The fourth electrode 550 may be made of a transparent metal material, such as indium tin oxide and / or indium zinc oxide, to improve current spreading and current diffusion, thereby enhancing luminous efficiency.

[0199] S120 : forming a first adhesive layer 560 on the first substrate 510 .

[0200] 29 , the first adhesive layer 560 may be formed on the first substrate 510 by a coating process. The material of the first adhesive layer 560 includes an organic material, for example, the material of the first adhesive layer 560 includes polyimide.

[0201] It should be noted that the thickness of the first adhesive layer 560 is 1 μm to 5 μm. For example, the thickness of the first adhesive layer 560 is any one of 1 μm, 1.5 μm, 2 μm, 2.5 μm, 3 μm, 3.5 μm, 4 μm, 4.5 μm and 5 μm.

[0202] S130 : Connecting the first substrate 510 with the first adhesive layer 560 attached thereto to the epitaxial wafer 500 ′.

[0203] In the above steps, as shown in FIG. 29 , a pressing process may be used to squeeze the first substrate 510 and the third substrate 530 on opposite sides thereof, so that the epitaxial wafer 500 ′ on the third substrate 530 is bonded and fixed to the first substrate 510 through the first adhesive layer 560 .

[0204] S140 : removing the third substrate 530 .

[0205] 29 , at least one of an etching process, a planarization process, or a mechanical stripping process may be used to remove the third substrate 530. For example, a wet etching process may be used to remove the third substrate 530.

[0206] As shown in FIG29 , when the epitaxial wafer 500 ′ includes a buffer layer 540, after removing the third substrate 530, the buffer layer 540 can also be removed to expose the light-emitting stacked layer 220. Whether the light-emitting stacked layer 220 is exposed can be determined by measuring the exposed film layer, the elements contained therein, and their relative contents using an energy dispersive X-ray spectrometer.

[0207] It should be noted that the process of removing the buffer layer 540 may be the same as or different from the process of removing the third substrate 530 , and the embodiment of the present disclosure does not make any specific limitation thereto.

[0208] Among them, one of the first semiconductor doping layer 221 and the second semiconductor doping layer 223 is an N-type doped semiconductor layer, and the other is a P-type doped semiconductor layer. Exemplarily, the material of the first semiconductor doping layer 221 is an N-type doped semiconductor layer, and the material of the second semiconductor doping layer 223 is P-type doped gallium nitride. The material of the quantum well layer 222 includes gallium nitride and / or indium gallium nitride.

[0209] For example, the material of the first semiconductor doping layer 221 is an N-type doped semiconductor layer, and the material of the second semiconductor doping layer 223 is P-type doped gallium nitride. Based on this, the buffer layer 540 is removed, exposing the first semiconductor doping layer 221. At this point, the exposed film layer is determined by measuring whether it contains elemental silicon and the relative content of elemental silicon. The composition of each film layer measured by energy dispersive X-ray spectrometry, with the third substrate 530 pointing toward the first substrate 510, is shown in Table 1 below.

[0210] As shown in Table 1, from the first substrate 510 to the epitaxial wafer 500 ′, the first substrate 510 , the buffer layer 540 , the first semiconductor doping layer 221 , the quantum well layer 222 and the second semiconductor doping layer 223 are arranged in order.

[0211] The material of the first substrate 510 includes sapphire and is free of dopant ions. The material of the buffer layer 540 includes gallium nitride and is free of dopant ions. The material of the first semiconductor doping layer 221 includes gallium nitride and is doped with silicon (Si), and the doping concentration can be 6*18 10 ~8*18 10 / cm 3 The material of the second semiconductor doping layer 223 includes gallium nitride and is doped with magnesium (Mg), and the doping concentration can be 1*18 19 ~8*18 20 / cm 3 The material of the quantum well layer 222 includes a luminescent material, such as gallium nitride and / or indium gallium nitride. The doping ions and doping concentrations can be set according to different luminescent colors. For example, the quantum well layer 222 excites blue light, and the quantum well layer 222 can be doped with indium. The light-emitting layer in the middle is doped with silicon, and the silicon doping concentration can be 1*18 18 / cm 3 .

[0212] It should be noted that other film layers may be provided between the buffer layer 540 and the first semiconductor doping layer 221, between the first semiconductor doping layer 221 and the quantum well layer 222, and between the quantum well layer 222 and the second semiconductor doping layer 223 to facilitate the sequential growth of the first semiconductor doping layer 221, the quantum well layer 222 and the second semiconductor doping layer 223. The embodiments disclosed herein are not specifically limited thereto.

[0213] Table 1:

[0214] S150 : forming a first electrode 210 on a side of the epitaxial wafer 500 ′ away from the first substrate 510 .

[0215] In the above steps, as shown in FIG29 , a thin film deposition process may be used to form the first electrode 210 on the side of the epitaxial wafer 500 ′ away from the first substrate 510. The thin film deposition process may include any one of chemical vapor deposition (CVD), physical vapor deposition (PVD), and atomic layer deposition (ALD).

[0216] It should be noted that, after S150 , the first electrode 210 may be subjected to a high-temperature annealing process to improve the crystallinity of the first electrode 210 .

[0217] In some other embodiments, referring to FIG. 19 , the above-mentioned S100 includes S160 - S170 .

[0218] S160 : forming an epitaxial wafer 500 ′ on the first substrate 510 .

[0219] In the above steps, as shown in FIG30 , the epitaxial wafer 500 ′ includes the light emitting stacked layer 220. The epitaxial wafer 500 ′ may further include a buffer layer 540 disposed between the first substrate 510 and the light emitting stacked layer 220. It should be noted that the material of the buffer layer 540 may include gallium nitride.

[0220] S170 : forming a first electrode 210 on a side of the epitaxial wafer 500 ′ away from the first substrate 510 .

[0221] In the above steps, as shown in FIG30 , a thin film deposition process may be used to form the first electrode 210 on the side of the epitaxial wafer 500 ′ away from the first substrate 510. The thin film deposition process may include any one of chemical vapor deposition (CVD), physical vapor deposition (PVD), and atomic layer deposition (ALD).

[0222] S200 : connecting the first electrodes 210 of the plurality of transfer epitaxial wafers 500 to the second substrate 520 .

[0223] In the above steps, as shown in Figures 31 to 35, a plurality of transfer epitaxial wafers 500 are spaced apart on the second substrate 520. The plurality of transfer epitaxial wafers 500 may be arranged in an array.

[0224] In some embodiments, referring to FIG. 20 , S200 includes S210 to S220 .

[0225] S210 : forming a plurality of bonding bumps 212 on the second substrate 520 .

[0226] In the above steps, as shown in FIG32 , a thin film deposition process may be used to form a whole layer of transparent metal material, and then patterned by wet etching and / or dry etching to form a plurality of bonding protrusions 212. The plurality of bonding protrusions 212 may be arranged in an array on the second substrate 520.

[0227] The thickness of the bonding bump 212 is 0.1 μm to 0.3 μm. For example, the thickness of the bonding bump 212 is any one of 0.1 μm, 0.15 μm, 0.2 μm, 0.25 μm, and 0.3 μm.

[0228] S220 : Bonding the first electrode 210 of each transfer epitaxial wafer 500 to at least two bonding bumps 212 .

[0229] In the above steps, as shown in Figure 32, the transfer epitaxial wafer 500 and the second substrate 520 are hard-bonded by recrystallization and nucleation via the first electrode 210 and at least two bonding bumps 212. This provides a strong bond between the transfer epitaxial wafer 500 and the second substrate 520, and allows for mechanical direct breaking of the bonding bumps 212 to achieve dissociation.

[0230] At this time, in the subsequent process, the light-emitting device 21 mentioned in some of the above embodiments can be formed. In the light-emitting device 21, the first electrode 210 includes an electrode body 211 and multiple bonding protrusions 212, and the multiple bonding protrusions 212 are spaced apart on one side of the electrode body 211.

[0231] The subsequently formed passivation layer 240 includes a first passivation portion 241 and a second passivation portion 242. The first passivation portion 241 covers the surface of the light-emitting stacked layer 220 away from the first electrode 210. The first passivation portion 241 is provided with a first via hole H1, through which the second electrode 230 is connected to the light-emitting stacked layer 220. The second passivation portion 242 covers at least a portion of the sidewalls of the light-emitting stacked layer 220 and the electrode body 211.

[0232] In other embodiments, referring to FIG. 21 , S200 includes S230 - S240 .

[0233] S230 : forming a second adhesive layer 570 on the second substrate 520 .

[0234] 33 and 34 , the second adhesive layer 570 may be formed on the first substrate 510 by a coating process. The material of the second adhesive layer 570 includes an organic material, for example, the material of the second adhesive layer 570 includes polyimide.

[0235] It should be noted that the thickness of the second adhesive layer 570 is 1 μm to 5 μm. For example, the thickness of the second adhesive layer 570 is any one of 1 μm, 1.5 μm, 2 μm, 2.5 μm, 3 μm, 3.5 μm, 4 μm, 4.5 μm and 5 μm.

[0236] S240 : bonding the first electrodes 210 of the plurality of transfer epitaxial wafers 500 to the second adhesive layer 570 .

[0237] In the above steps, as shown in Figures 33 and 34, a pressing process can be used to squeeze the first substrate 510 and the second substrate 520 on opposite sides so that the transfer epitaxial wafer 500 on the first substrate 510 is bonded and fixed to the second substrate 520 through the second adhesive layer 570.

[0238] At this point, in subsequent processes, the light-emitting device 21 mentioned in other embodiments above can be formed. In this light-emitting device 21, the thickness of the first electrode 210 is 0.1 μm to 0.3 μm. For example, the thickness of the first electrode 210 is any one of 0.1 μm, 0.12 μm, 0.14 μm, 0.15 μm, 0.18 μm, 0.2 μm, 0.24 μm, 0.25 μm, 0.28 μm, and 0.3 μm. That is, the first electrode 210 is a conductive layer formed by a single thin film deposition process.

[0239] The subsequently formed passivation layer 240 includes a first passivation portion 241 and a second passivation portion 242. The first passivation portion 241 covers the surface of the light-emitting stacked layer 220 away from the first electrode 210. The first passivation portion 241 is provided with a first via hole H1, through which the second electrode 230 is connected to the light-emitting stacked layer 220. The second passivation portion 242 covers the sidewalls of the light-emitting stacked layer 220 and extends to the side of the light-emitting stacked layer 220 away from the second electrode 230. The distance between the portion of the second passivation portion 242 extending beyond the light-emitting stacked layer 220 and the light-emitting stacked layer 220 is greater than the thickness of the first electrode 210.

[0240] In some other embodiments, referring to FIG. 22 , S200 includes S250 - S260 .

[0241] S250 : forming a third adhesive layer 580 and a bonding layer 590 on the second substrate 520 .

[0242] In the above steps, as shown in FIG35 , the third adhesive layer 580 is located between the bonding layer 590 and the second substrate 520. The third adhesive layer 580 can be formed on the first substrate 510 using a coating process. The bonding layer 590 can be formed on the side of the third adhesive layer 580 away from the second substrate 520 using a thin film deposition process.

[0243] The bonding layer 590 is made of a transparent metal material, for example, indium tin oxide and / or indium zinc oxide. The third adhesive layer 580 is made of an organic material, for example, polyimide.

[0244] Furthermore, the bonding layer 590 has a thickness of 0.1 μm to 0.3 μm. Exemplarily, the bonding layer 590 has a thickness of any one of 0.1 μm, 0.15 μm, 0.2 μm, 0.25 μm, and 0.3 μm. The third adhesive layer 580 has a thickness of 0.1 μm to 0.5 μm. Exemplarily, the third adhesive layer 580 has a thickness of any one of 0.1 μm, 0.15 μm, 0.2 μm, 0.25 μm, 0.3 μm, 0.35 μm, 0.4 μm, 0.45 μm, and 5 μm.

[0245] It should be noted that when the first adhesive layer 560 , the second adhesive layer 570 , the third adhesive layer 580 and the fourth adhesive layer 630 are all made of polyimide, the proportions of the components contained in the polyimide may be different, so that the thickness of the film layer formed after the coating process is different.

[0246] At this point, in the subsequent process, the light-emitting device 21 mentioned in the other embodiments above can be formed. In the light-emitting device 21, the first electrode 210 is formed by bonding the bonding layer 590 in S250 and the first electrode 210 of the transfer epitaxial wafer 500. The thickness of the first electrode 210 is twice the thickness of the first electrode 210 of the light-emitting device 21 of other embodiments. For example, the thickness of the first electrode 210 is 0.2μm to 0.6μm. For example, the thickness of the first electrode 210 is any one of 0.2μm, 0.25μm, 0.3μm, 0.35μm, 0.4μm, 0.45μm, 0.5μm, 0.55μm and 0.6μm. That is, the first electrode 210 of the light-emitting device 21 formed in this embodiment is formed by bonding the conductive layers formed by two thin film deposition processes.

[0247] The subsequently formed passivation layer 240 includes a first passivation portion 241 and a second passivation portion 242. The first passivation portion 241 covers the surface of the light-emitting stacked layer 220 away from the first electrode 210. The first passivation portion 241 is provided with a first via hole H1, through which the second electrode 230 is connected to the light-emitting stacked layer 220. The second passivation portion 242 covers the sidewalls of the light-emitting stacked layer 220 and extends to the side of the light-emitting stacked layer 220 away from the second electrode 230. The distance between the portion of the second passivation portion 242 extending beyond the light-emitting stacked layer 220 and the light-emitting stacked layer 220 is greater than the thickness of the first electrode 210.

[0248] S260 : Bonding the first electrodes 210 of the plurality of transfer epitaxial wafers 500 to the bonding layer 590 .

[0249] In the above steps, as shown in Figure 35 , the transfer epitaxial wafer 500 and the second substrate 520 are hard-bonded by recrystallization and nucleation via the first electrode 210 and the bonding layer 590. This provides a strong bond between the transfer epitaxial wafer 500 and the second substrate 520, and allows for separation via the third adhesive layer 580.

[0250] S300 : removing the first substrate 510 of the transfer epitaxial wafer 500 .

[0251] In the above steps, referring to FIG. 32 to FIG. 39 , the first substrate 510 may be removed by at least one of laser debonding, thermal sliding debonding, chemical debonding, and mechanical debonding.

[0252] In some examples, S100 includes S110 to S150, and the first substrate 510 can be irradiated with a laser having a wavelength of 355 nm. After the laser passes through the first substrate 510 and is absorbed by the first adhesive layer 560, the interface between the first substrate 510 and the first adhesive layer 560 is eroded, thereby removing the first substrate 510.

[0253] In other examples, S100 includes S160 to S170, and the first substrate 510 can be etched using a laser having a wavelength of 266 nm. The laser is absorbed by the material of the buffer layer 540 through the first substrate 510, thereby causing the interface between the first substrate 510 and the buffer layer 540 to be eroded, thereby removing the first substrate 510. Of course, the first substrate 510 can also be removed by wet etching, which is not specifically limited in the present embodiment.

[0254] In the case where the epitaxial wafer 500' includes a buffer layer 540, after removing the first substrate 510, the buffer layer 540 can also be removed to expose the light-emitting stacked layer 220. Whether the light-emitting stacked layer 220 is exposed can be determined by measuring the exposed film layer, the elements contained therein, and their relative contents using an energy dispersive X-ray spectrometer.

[0255] It should be noted that the process of removing the buffer layer 540 may be the same as or different from the process of removing the first substrate 510 , and the embodiment of the present disclosure does not make any specific limitation thereto.

[0256] S400 : Patterning the transfer epitaxial wafer 500 so that each transfer epitaxial wafer 500 is divided into a plurality of sub-epitaxial wafers 501 .

[0257] In the above steps, as shown in Figures 37 to 39 , each sub-epitaxial wafer 501 includes a light-emitting stacked layer 220 and a first electrode 210. Each sub-epitaxial wafer 501 forms a corresponding light-emitting device 21 in subsequent processes. In other words, a single intermediate epitaxial wafer 500 can form multiple light-emitting devices 21, which improves production efficiency and reduces manufacturing costs.

[0258] It should be noted that the first electrode 210 of each sub-epitaxial wafer 501 is bonded to at least two bonding protrusions 212. While maintaining a strong bond strength, the bonding protrusions 212 can be mechanically directly pulled apart to separate the subsequently formed light-emitting device 21 from the second substrate 520. The orthographic projections of two adjacent sub-epitaxial wafers 501 on the second substrate 520 can be in the shape of a circle, an ellipse, or a square. That is, the orthographic projections of the subsequently formed light-emitting device 21 on the second substrate 520 can be in the shape of a circle, an ellipse, or a square.

[0259] 36 , a distance L2 between orthographic projections of two adjacent sub-epitaxial wafers 501 on the second substrate 520 is 2 μm to 20 μm. For example, the distance L2 between orthographic projections of two adjacent sub-epitaxial wafers 501 on the second substrate 520 is any one of 2 μm, 4 μm, 6 μm, 9 μm, 10 μm, 13 μm, 15 μm, 18 μm, and 20 μm.

[0260] 45 , the radial dimension L1 of each sub-epitaxial wafer 501 is 2 μm to 20 μm. For example, the radial dimension L1 of each sub-epitaxial wafer 501 is any one of 2 μm, 4 μm, 6 μm, 9 μm, 10 μm, 13 μm, 15 μm, 18 μm, and 20 μm.

[0261] In some embodiments, referring to FIG. 23 , S400 includes S410 .

[0262] S410 : Simultaneously patterning the light emitting stacked layer 220 and the first electrode 210 through a single dry etching process.

[0263] 37 and 39 , a mask plate can be used to etch and pattern the light emitting stacked layer 220 and the first electrode 210 in one step, wherein the mask plate is made of a photoresist.

[0264] In this case, the slope angle of the light-emitting stacked layer 220 is greater than or equal to 60°. In this case, the larger slope angle of the side of the light-emitting stacked layer 220 increases the contact area between the second electrode 230 and the light-emitting stacked layer 220, thereby increasing the light-emitting area. At the same time, the passivation layer 240 has a larger contact area with the upper surface of the light-emitting stacked layer 220, providing better coverage and adhesion.

[0265] In this case, in a subsequent process, the light-emitting device 21 mentioned in some of the above embodiments can be formed. In the light-emitting device 21, the subsequently formed passivation layer 240 includes a first passivation portion 241 and a second passivation portion 242. The first passivation portion 241 covers the surface of the light-emitting stacked layer 220 away from the first electrode 210. The first passivation portion 241 is provided with a first via H1, and the second electrode 230 is connected to the light-emitting stacked layer 220 through the first via H1. The second passivation portion 242 covers the sidewall of the light-emitting stacked layer 220 and extends to the side of the light-emitting stacked layer 220 away from the second electrode 230. The distance between the portion of the second passivation portion 242 extending beyond the light-emitting stacked layer 220 and the light-emitting stacked layer 220 is greater than the thickness of the first electrode 210.

[0266] On this basis, as shown in FIG23 , before S410 , S400 may further include S420 .

[0267] S420 : forming a hard mask layer 260 on a side of the transfer epitaxial wafer 500 away from the second substrate 520 .

[0268] In the above steps, as shown in FIG39 , the hard mask layer 260 covers the surface of the light-emitting stacked layer 220 away from the first electrode 210 to reduce damage to the surface of the light-emitting stacked layer 220 away from the first electrode 210 caused by the etching process in S410. The hard mask layer 260 can be formed by a multi-layer stack structure. For example, the hard mask layer 260 includes a photoresist layer 263, a silicon oxide layer 262, and an indium tin oxide layer 261 stacked in sequence, with the indium tin oxide layer 261 being close to the light-emitting stacked layer 220.

[0269] In this case, given the protective effect of the hard mask layer 260, the slope angle of the light-emitting stacked layer 220 can be greater than or equal to 80°. In this case, the slope angle of the side of the light-emitting stacked layer 220 can be further increased, increasing the contact area between the second electrode 230 and the light-emitting stacked layer 220, thereby further increasing the light-emitting area. At the same time, the contact area between the passivation layer 240 and the upper surface of the light-emitting stacked layer 220 is larger, providing better coverage and adhesion.

[0270] In some other embodiments, referring to FIG. 24 , S400 includes S430 .

[0271] S430 : patterning the light emitting stacked layer 220 and the first electrode 210 respectively through two dry etching processes, such that the boundary of the light emitting stacked layer 220 is retracted compared to the boundary of the first electrode 210 .

[0272] In the above steps, as shown in FIG38 , a mask plate can be used to perform etching once on the light emitting stacked layer 220 and the first electrode 210 to perform patterning.

[0273] In some embodiments, as shown in Figure 38, the distance between the boundary of the light-emitting stack layer 220 and the boundary of the first electrode 210 is greater than or equal to 1 μm, so that the passivation layer 240 (see Figure 9) and / or the reflective layer 270 (see Figure 9) in the subsequent process are formed on the edge portion of the first electrode 210 beyond the light-emitting stack layer 220.

[0274] In this case, in subsequent processes, the light-emitting device 21 mentioned in other embodiments above can be formed. In this light-emitting device 21, the subsequently formed passivation layer 240 includes a first passivation portion 241 and a second passivation portion 242. The first passivation portion 241 covers the surface of the light-emitting stacked layer 220 away from the first electrode 210. The first passivation portion 241 is provided with a first via H1, and the second electrode 230 is connected to the light-emitting stacked layer 220 through the first via H1. The second passivation portion 242 covers the sidewalls of the light-emitting stacked layer 220, and at least part of the edge of the first electrode 210 extends beyond the second passivation portion 242.

[0275] In some examples, as shown in FIG9 , the circumferential boundaries of the first electrode 210 all extend beyond the passivation layer 240. That is, the second passivation portion 242 is located on the edge portion of the first electrode 210 that extends beyond the light-emitting stacked layer 220, and the outer boundary of the second passivation portion 242 is retracted relative to the boundary of the first electrode 210. In this way, during the preparation process of the light-emitting device 21, the passivation layer 240 does not contact the substrate (the second substrate 520 mentioned below), facilitating separation of the light-emitting device 21 from the substrate (the second substrate 520 mentioned below).

[0276] In other examples, as shown in FIG. 10 and FIG. 11 , a portion of the circumferential boundary of the first electrode 210 extends beyond the passivation layer 240 .

[0277] Exemplarily, the second passivation portion 242 includes a first sub-portion 2421 and a second sub-portion 2422 connected circumferentially along the light-emitting stack layer 220. The edge portion of the first electrode 210 corresponding to the first sub-portion 2421 does not extend beyond the passivation layer 240, and the edge portion of the first electrode 210 corresponding to the second sub-portion 2422 extends beyond the passivation layer 240, that is, extends beyond the second passivation portion 242.

[0278] The first sub-portion 2421 covers the sidewalls of the light-emitting stacked layer 220 and the sidewalls of the first electrode 210, and an end of the first sub-portion 2421 away from the second electrode 230 is flush with the surface of the first electrode 210 away from the second electrode 230. The second sub-portion 2422 covers the sidewalls of the light-emitting stacked layer 220 and is located on the edge of the first electrode 210 that extends beyond the light-emitting stacked layer 210.

[0279] When S400 includes S410 or S430, dry etching is used, which will cause the crystals of the first semiconductor doping layer 221 and / or the second semiconductor doping layer 223 in the light-emitting stack layer 220 to have non-polar surfaces, and the non-polar surfaces exposed to the side walls of the light-emitting stack layer 220 will reduce the light extraction efficiency.

[0280] Based on this, as shown in FIG. 23 and FIG. 24 , the above-mentioned S400 also includes S440 .

[0281] S440 : etching the sidewalls of the light emitting stacked layer 220 and the first electrode 210 through a wet etching process, so that the crystals with non-polar surfaces exposed on the sidewalls of the light emitting stacked layer 220 are removed.

[0282] In the above steps, referring to FIG. 15 , because the materials of the various layers in the light-emitting stack 220 are inconsistent, the etching rates for the same etchant vary. After S440 , a stepped structure S is formed on the sidewalls of the light-emitting stack 220 , with the circumferential edge of the light-emitting stack 220 indented in a stepped manner from the second electrode 230 toward the first electrode 210 .

[0283] Exemplarily, the light-emitting stacked layer 220 includes a quantum well layer 222, and a first semiconductor doping layer 221 and a second semiconductor doping layer 223 disposed on opposite sides of the quantum well layer 222. On this basis, the first semiconductor doping layer 221, the quantum well layer 222, and the second semiconductor doping layer 223 each form a step.

[0284] It should be noted that, since the doping concentrations at different positions in the first semiconductor doping layer 221 and the second semiconductor doping layer 223 may be different, the first step S1 and the third step S3 may also include multiple sub-steps, which is not specifically limited in the embodiment of the present disclosure.

[0285] S500 : forming a passivation layer 240 and a second electrode 230 in sequence.

[0286] In the above steps, referring to Figures 14 and 40, the passivation layer 240 includes a first passivation portion 241 and a second passivation portion 242. The first passivation portion 241 covers the surface of the light-emitting stacked layer 220 away from the first electrode 230. The first passivation portion 241 is provided with a first via hole H1, and the second electrode 230 is connected to the light-emitting stacked layer 220 through the first via hole H1.

[0287] 41 , in the process of S500 , a reflective layer 270 and a first flat layer 60 may also be formed. The reflective layer 270 is disposed on the side of the passivation layer 240 away from the light-emitting stacked layer 220 , and the first flat layer 60 is disposed on the side of the reflective layer 270 away from the light-emitting stacked layer 220 .

[0288] It should be noted that the material of the first planar layer 60 includes optical adhesive and / or organosiloxane. The thickness of the first planar layer 60 is 1 μm to 5 μm. For example, the thickness of the first planar layer 60 is any one of 1 μm, 1.5 μm, 2 μm, 2.5 μm, 3 μm, 3.5 μm, 4 μm, 4.5 μm, and 5 μm.

[0289] Furthermore, the passivation layer 240, the reflective layer 270, and the first planar layer 60 all need to be patterned. The passivation layer 240, the reflective layer 270, and the first planar layer 60 can be patterned in the same process step or separately. For example, the passivation layer 240, the reflective layer 270, and the first planar layer 60 are patterned in one step using a wet and / or dry etching process.

[0290] When S400 includes S410, referring to FIG6 and FIG41 , the second passivation portion 242 of the passivation layer 240 covers the sidewalls of the light-emitting stacked layer 220 and the first electrode 210, and extends to a side of the first electrode 210 away from the second electrode 230. The distance between the boundary of the orthographic projection of the second passivation portion 242 on the second substrate 520 and the boundary of the orthographic projection of the first electrode 210 on the second substrate 520 is 0 μm to 0.6 μm, so as to facilitate the dissociation of the light-emitting device 21.

[0291] When S400 includes S430, one of at least two adjacent light-emitting devices 21 may be the first light-emitting device 201 and the other may be the second light-emitting device 202. Alternatively, one of at least two adjacent light-emitting devices 21 may be the third light-emitting device 203 and the other may be the fourth light-emitting device 204.

[0292] 12 , at least two adjacent light emitting devices 21 may have one being a first light emitting device 201 and the other being a second light emitting device 202. After S430, as shown in FIG25 , S500 includes S510 to S530.

[0293] S510 : forming a passivation layer 240 .

[0294] 9 , 10 and 12 , the passivation layer 240 may be formed by thin film deposition and then patterned. The passivation layer 240 of the first light emitting device 201 is the first passivation layer 2410 , and the passivation layer 240 of the second light emitting device 202 is the second passivation layer 2420 .

[0295] It should be noted that the passivation layer 240 can be deposited through two thin film deposition processes. The first process uses atomic layer deposition of silicon oxide to achieve better anti-oxidation effect; the second process uses chemical vapor deposition of silicon dioxide, silicon oxide and silicon nitride, or silicon dioxide and aluminum oxide to improve production efficiency.

[0296] As shown in Figures 9, 10, and 12, the second passivation portion 242 of the first passivation layer 2410 is retracted relative to the boundary of the first electrode 210. The second passivation portion 242 of the second passivation layer 2420 includes a first sub-portion 2421 and a second sub-portion 2422. The first sub-portion 2421 covers the sidewalls of the light-emitting stacked layer 220 and the sidewalls of the first electrode 210. The second sub-portion 2422 covers the sidewalls of the light-emitting stacked layer 220 and is located on the edge of the first electrode 210 that extends beyond the light-emitting stacked layer 220.

[0297] S520 : forming a reflective layer 270 .

[0298] In the above steps, as shown in Figures 9, 10, and 12, the reflective layer 270 can be formed using a thin film deposition process and then patterned. The reflective layer 270 is disposed on the side of the passivation layer 240 away from the light-emitting stack layer 220. The reflective layer 270 of the first light-emitting device 201 is a first reflective layer 2710, and the reflective layer 270 of the second light-emitting device 202 is a second reflective layer 2720.

[0299] 9 , 10 , and 12 , the boundary of the first reflective layer 2710 is substantially flush with the boundary of the first passivation layer 2410, or at least a portion of the boundary is retracted relative to the boundary of the first passivation layer 2410. The second reflective layer 2720 covers the first sub-portion 2421 of the second passivation layer 2420 and is connected to the portion of the first electrode 210 of the first light-emitting device 201 that extends beyond the first passivation layer 2410.

[0300] It should be noted that after S520 , a first planar layer 60 may be formed by a coating process. The first planar layer 60 is disposed on a side of the reflective layer 270 away from the light emitting stacked layer 220 .

[0301] S530 : forming the second electrode 230 .

[0302] In the above steps, as shown in Figures 9, 10, and 12, the second electrode 230 can be formed by a thin film deposition process and then patterned. The second electrode 230 is disposed on a side of the reflective layer 270 away from the light-emitting stacked layer 220 and is connected to the reflective layer 270.

[0303] In other embodiments, referring to Fig. 13 , of at least two adjacent light emitting devices 21 , one is the third light emitting device 203 and the other is the fourth light emitting device 204. After S430, as shown in Fig. 26 , S500 includes S540 to S570.

[0304] S540 : forming a passivation layer 240 .

[0305] In the above steps, as shown in Figures 9, 11 and 13, the passivation layer 240 can be formed by a thin film deposition process and then patterned. Among them, the passivation layer 240 of the third light emitting device 203 is the third passivation layer 2430, and the passivation layer 240 of the fourth light emitting device 204 is the fourth passivation layer 2440.

[0306] As shown in Figures 9, 11, and 13, the second passivation portion 242 of the third passivation layer 2430 is retracted relative to the boundary of the first electrode 210. The second passivation portion 242 of the fourth passivation layer 2440 includes a first sub-portion 2421 and a second sub-portion 2422. The first sub-portion 2421 covers the sidewalls of the light-emitting stacked layer 220 and the sidewalls of the first electrode 210. The second sub-portion 2422 covers the sidewalls of the light-emitting stacked layer 220 and is located at the edge of the first electrode 210 that extends beyond the light-emitting stacked layer 220.

[0307] S550 : forming a reflective layer 270 .

[0308] In the above steps, as shown in Figures 9, 11, and 13, the reflective layer 270 can be formed using a thin film deposition process and then patterned. The reflective layer 270 is disposed on the side of the passivation layer 240 away from the light-emitting stacked layer 220. Furthermore, the orthographic projection of the reflective layer 270 on the driver backplane 10 is within the range of the orthographic projection of the passivation layer 240 on the driver backplane 10. That is, the boundary of the reflective layer 270 is approximately flush with the boundary of the first passivation layer 2410, or at least a portion of the boundary is indented relative to the boundary of the first passivation layer 2410.

[0309] S560 : forming a first planarization layer 60 .

[0310] In the above steps, as shown in Figures 9, 11 and 13, the first flat layer 60 can be formed by coating and then patterning. The first flat layer 60 is disposed on the side of the reflective layer 270 away from the light emitting stacked layer 220 and has a third via hole H3.

[0311] S570 : forming the second electrode 230 .

[0312] In the above steps, as shown in Figures 9, 11 and 13, the second electrode 230 can be formed by a thin film deposition process and then patterned. The second electrode 230 is disposed on a side of the reflective layer 270 away from the light emitting stacked layer 220.

[0313] The second electrode 230 of the third light emitting device 203 is connected to the portion of the first electrode 210 of the fourth light emitting device 204 that extends beyond the passivation layer 240 through the third via hole H3 .

[0314] Based on the above, S500 includes S510 to S530 or S540 to S570, and the light-emitting devices 21 connected in series can be directly formed, which can simplify the process flow and reduce the preparation cost.

[0315] S600: removing the second substrate 520.

[0316] When S200 includes S210 and S220, as shown in FIG40 , S600 can be performed by mechanical stripping to pull the passivation layer 240 and the bonding protrusion 212 apart. If the reflective layer 270 is formed in S500, the reflective layer 270 is also pulled apart during the pull-off process of the passivation layer 240 and the bonding protrusion 212.

[0317] As shown in Figures 14 and 40, the second passivation portion 242 covers the sidewalls of the light-emitting stacked layer 220 and the electrode body 211, and the end of the second passivation portion 242 away from the first passivation portion 241 is substantially flush with the surface of the electrode body 211 away from the first passivation portion 241. Alternatively, the second passivation portion 242 covers the sidewalls of the light-emitting stacked layer 220 and part of the sidewalls of the electrode body 211, and the end of the second passivation portion 242 away from the first passivation portion 241 is located between the two surfaces of the electrode body 211 away from and close to the first passivation portion 241.

[0318] As shown in Figures 14 and 40, the reflective layer 270 is roughly flush with the end of the second passivation portion 242 away from the second electrode 230, or the end of the reflective layer 270 away from the second electrode 230 is closer to the second electrode 230 than the end of the second passivation portion 242 away from the second electrode 230.

[0319] When S200 includes S230 to S240 or S250 to S260 , as shown in FIG. 41 and FIG. 42 , S600 may remove the second substrate 520 by at least one of laser debonding, thermal sliding debonding, chemical debonding, and mechanical debonding.

[0320] It should be noted that after removing the second substrate 520, the remaining second adhesive layer 570 or third adhesive layer 580 can be removed by an ashing process. Since the ashing process may cause pits to form on the surface of the first electrode 210 away from the second electrode 230, a connecting electrode 250 can be formed on the first electrode 210 to fill the surface of the first electrode 210 away from the second electrode 230 and facilitate connection with other subsequent circuits (such as the surface electrode 30).

[0321] Some embodiments of the present disclosure further provide a method for preparing a light-emitting substrate 110 , as shown in FIG. 27 , including steps S700 to S900 .

[0322] S700 : preparing the light-emitting device 21 .

[0323] In the above steps, the light-emitting device 21 is manufactured by using the method for manufacturing a light-emitting device in any of the above embodiments.

[0324] S800: Arrange a plurality of light-emitting devices 21 on the fourth substrate 620 according to a preset arrangement.

[0325] In the above steps, as shown in Figures 12, 13, and 42 to 45, the plurality of light-emitting devices 21 can be connected to the fourth substrate 620 via the fourth adhesive layer 630. Exemplarily, the fourth adhesive layer 630 is formed on the fourth substrate 620 using a coating process. The material of the fourth adhesive layer 630 includes an organic material, for example, the material of the fourth adhesive layer 630 includes polyimide.

[0326] It should be noted that the thickness of the fourth adhesive layer 630 is 1 μm to 5 μm. For example, the thickness of the fourth adhesive layer 630 is any one of 1 μm, 1.5 μm, 2 μm, 2.5 μm, 3 μm, 3.5 μm, 4 μm, 4.5 μm and 5 μm.

[0327] In addition, the arrangement of the plurality of light emitting devices 21 is not unique, and the preset arrangement can be set according to actual conditions.

[0328] Exemplarily, the preset arrangement is a standard arrangement. That is, the plurality of light-emitting devices 21 include red light-emitting devices, blue light-emitting devices, and green light-emitting devices, and are arranged in multiple rows and columns. Each row includes red light-emitting devices, blue light-emitting devices, and green light-emitting devices arranged in a cyclic manner, and the light-emitting devices 21 in the same column emit the same color.

[0329] S900 : removing the fourth substrate 620 , and connecting the arranged light-emitting devices 21 to the driving backplane 10 .

[0330] In the above steps, as shown in FIG. 41 and FIG. 42 , the fourth substrate 620 may be removed by at least one of laser debonding, thermal sliding debonding, chemical debonding, and mechanical debonding.

[0331] In some embodiments, referring to FIG. 28 , the method for preparing the light-emitting substrate 110 further includes S910 to S930 .

[0332] S910 : forming the surface electrode 30 .

[0333] In the above steps, as shown in Figures 41 and 42 , the surface electrode 30 can be formed by a thin film deposition process. The surface electrode 30 is disposed on a side of the light emitting device 21 away from the driving backplane 10 and is connected to the first electrode 210 of the light emitting device 21 .

[0334] S920: forming the auxiliary cathode 40 by using a digital exposure process.

[0335] In the above steps, as shown in Figures 41 and 42, the auxiliary electrode 40 is formed using a digital exposure process, which can achieve high-precision morphology control. The auxiliary electrode 40 is disposed on the side of the surface electrode 30 away from the driving backplane 10 and is connected to the surface electrode 30 to reduce the resistance of the second voltage signal, reduce the voltage drop, and reduce the difference in the second voltage signal between the electronic components 20 at different locations, thereby improving the brightness uniformity of the light-emitting substrate 110.

[0336] In addition, as shown in Figures 41, 42, and 43, the auxiliary electrode 40 can be provided with a plurality of openings 401, each opening 401 exposing one light-emitting device 21, and the shape of the orthographic projection of the opening 401 on the driving backplane 10 is the same as the shape of the orthographic projection of the light-emitting device 21 on the driving backplane 10. In this way, the auxiliary electrode 40 can block light between the light-emitting devices 21, eliminating the need for a light-shielding layer, which helps reduce the thickness of the display device 1000.

[0337] S930 : forming the packaging portion 50 .

[0338] In the above steps, as shown in Figures 41, 42, and 43, the encapsulation portion 50 can be formed using a dispensing process. For example, the encapsulation portion 50 can be formed by spraying a highly thixotropic adhesive using a dispensing machine and then curing it. The orthographic projection of a light-emitting device 21 on the driver backplane 10 is located within the orthographic projection of the encapsulation portion 50 on the driver backplane 10, thereby protecting the light-emitting device 21.

[0339] The above description is merely a specific embodiment of the present disclosure, but the scope of protection of the present disclosure is not limited thereto. Any changes or substitutions that a person skilled in the art can conceive within the technical scope disclosed in the present disclosure should be included within the scope of protection of the present disclosure. Therefore, the scope of protection of the present disclosure should be based on the scope of protection of the claims.

Claims

1. A light-emitting device, comprising: a first electrode; a light-emitting stacked layer, disposed on one side of the first electrode and connected to the first electrode; a second electrode, disposed on a side of the light-emitting stacked layer away from the first electrode; the second electrode is configured to be connected to a driving backplane; A passivation layer includes a first passivation portion and a second passivation portion; the first passivation portion covers the surface of the light-emitting stack layer away from the first electrode; the first passivation portion is provided with a first via hole, and the second electrode is connected to the light-emitting stack layer through the first via hole; the second passivation portion covers the side wall of the light-emitting stack layer and extends to a side of the light-emitting stack layer away from the second electrode; the distance between the part of the second passivation portion extending beyond the light-emitting stack layer and the light-emitting stack layer is greater than the thickness of the first electrode.

2. The light emitting device according to claim 1, wherein The second passivation portion covers the sidewalls of the light-emitting stacked layer and the first electrode, and extends to a side of the light-emitting stacked layer away from the second electrode.

3. The light emitting device according to claim 2, further comprising: The connecting electrode is disposed on a side of the first electrode away from the second electrode; and the connecting electrode covers the first electrode and extends to a surface of the second passivation portion away from the first passivation portion.

4. The light emitting device according to any one of claims 1 to 3, wherein: The boundaries of two surfaces of the light-emitting stacked layer and the first electrode that are opposite to each other are connected to form a slope surface, and the slope angle of the slope surface is greater than or equal to 60°.

5. The light emitting device according to any one of claims 1 to 4, further comprising: a hard mask layer, disposed between a surface of the light-emitting stacked layer away from the first electrode and the passivation layer; The hard mask layer is provided with a second via hole, and the second electrode is connected to the light-emitting stack layer through the first via hole and the second via hole. The light emitting device according to claim 5 , wherein: The boundaries of two surfaces of the light-emitting stacked layer and the first electrode that are opposite to each other are connected to form a slope surface, and the slope angle of the slope surface is greater than or equal to 80°.

7. The light emitting device according to any one of claims 1 to 6, wherein: The thickness of the first electrode is 8. The light emitting device according to any one of claims 1 to 7, wherein: The sidewall of the light-emitting stacked layer forms a step structure, and in a direction from the second electrode to the first electrode, the circumferential boundary of the light-emitting stacked layer is indented in a step-like manner.

9. The light emitting device according to any one of claims 1 to 8, further comprising: The reflective layer is arranged on a side of the passivation layer away from the light-emitting stacked layer.

10. A light emitting device comprising: a first electrode; a light-emitting stacked layer, disposed on the first electrode and connected to the first electrode; The boundary of the light-emitting stacked layer is retracted relative to the boundary of the first electrode; a second electrode, disposed on a side of the light-emitting stacked layer away from the first electrode; the second electrode is configured to be connected to a driving backplane; A passivation layer includes a first passivation portion and a second passivation portion connected to each other; the first passivation portion covers the surface of the light-emitting stack layer away from the first electrode; the first passivation portion is provided with a first via hole, and the second electrode is connected to the light-emitting stack layer through the first via hole; the second passivation portion covers the side wall of the light-emitting stack layer, and at least part of the edge of the first electrode extends beyond the second passivation portion. The light emitting device according to claim 10 , wherein: The second passivation portion is located on an edge portion of the first electrode that extends beyond the light-emitting stack layer, and an outer boundary of the second passivation portion is retracted inward compared to a boundary of the first electrode.

12. The light emitting device according to claim 10, wherein The second passivation portion includes a first sub-portion and a second sub-portion connected along the circumference of the light-emitting stack layer; the first sub-portion covers the side wall of the light-emitting stack layer and the side wall of the first electrode; the second sub-portion covers the side wall of the light-emitting stack layer and is located on the edge portion of the first electrode that extends beyond the light-emitting stack layer; the edge portion of the first electrode corresponding to the second sub-portion extends beyond the second passivation portion.

13. A light emitting device comprising: A first electrode comprising an electrode body and a plurality of bonding protrusions, wherein the plurality of bonding protrusions are spaced apart and arranged on one side of the electrode body; a light-emitting stacked layer, disposed on a side of the electrode body away from the bonding protrusion and connected to the electrode body; a second electrode, disposed on a side of the light-emitting stacked layer away from the first electrode; the second electrode is configured to be connected to a driving backplane; A passivation layer includes a first passivation portion and a second passivation portion connected to each other; the first passivation portion covers the surface of the light-emitting stack layer away from the first electrode; the first passivation portion is provided with a first via hole, and the second electrode is connected to the light-emitting stack layer through the first via hole; the second passivation portion covers the light-emitting stack layer and at least part of the side wall of the electrode body. The light emitting device according to claim 13 , wherein: The plurality of bonding protrusions are arranged in an array.

15. A light-emitting substrate, comprising: A plurality of light-emitting devices according to any one of claims 1 to 14; The driving backplane is provided with a plurality of third electrodes; the second electrodes of the light-emitting device are connected to the third electrodes of the driving backplane. The light-emitting substrate according to claim 15 , wherein: At least two adjacent light-emitting devices, one is a first light-emitting device and the other is a second light-emitting device; the first light-emitting device is the light-emitting device according to any one of claims 9 to 11, and the second light-emitting device is the light-emitting device according to claim 11; The first light-emitting device and the second light-emitting device both include a reflective layer, which is arranged on a side of the passivation layer away from the light-emitting stack layer; the first sub-portion of the second light-emitting device faces the first light-emitting device, and the reflective layer of the second light-emitting device covers the first sub-portion and is connected to the part of the first electrode of the first light-emitting device that extends beyond the passivation layer.

17. The light-emitting substrate according to claim 15, wherein Of at least two adjacent light-emitting devices, one is a third light-emitting device and the other is a fourth light-emitting device; the third light-emitting device is the light-emitting device according to any one of claims 9 to 11, and the fourth light-emitting device is the light-emitting device according to claim 11; The light-emitting substrate further includes: The first flat layer is arranged on a side of the second electrode close to the light-emitting stack layer of the light-emitting device; the first flat layer is provided with a third via hole, and the second electrode of the third light-emitting device is connected to the part of the first electrode of the fourth light-emitting device that extends beyond the passivation layer through the third via hole.

18. The light-emitting substrate according to any one of claims 15 to 17, comprising a light-emitting area and a peripheral area, further comprising: a surface electrode covering the light-emitting area and extending to the peripheral area; The surface electrode is arranged on a side of the light emitting device away from the driving backplane and is connected to the first electrode of the light emitting device; A plurality of packaging parts are arranged at intervals on a side of the surface electrode away from the driving back plate; An orthographic projection of the light-emitting device on the driving backplane is located within the range of an orthographic projection of the packaging portion on the driving backplane; an auxiliary electrode, disposed on a side of the surface electrode away from the driving back plate and connected to the surface electrode; The auxiliary electrode is provided with a plurality of openings, each of the openings exposing one of the light emitting devices; and the shape of the orthographic projection of the opening on the driving backplane is the same as the shape of the orthographic projection of the light emitting device on the driving backplane.

19. A backlight module, comprising: The light-emitting substrate according to any one of claims 15 to 18, wherein the light-emitting substrate has a light-emitting side and a non-light-emitting side opposite to each other; A plurality of optical films are arranged on the light-emitting side of the light-emitting substrate.

20. A display device comprising: The backlight module according to claim 19; The display panel is arranged on a side of the plurality of optical films in the backlight module away from the light-emitting substrate.

21. A method for preparing a light-emitting device, comprising: Preparation of transfer epitaxial wafers; The transfer epitaxial wafer includes a first substrate, a light-emitting stacked layer and a first electrode, wherein the first electrode and the light-emitting stacked layer are sequentially stacked on the first substrate; connecting the first electrodes of the plurality of transfer epitaxial wafers to the second substrate; A plurality of the transfer epitaxial wafers are spaced apart on the second substrate; removing the first substrate of the transfer epitaxial wafer; The transfer epitaxial wafer is patterned so that each transfer epitaxial wafer is divided into a plurality of sub-epitaxial wafers. The sub-epitaxial wafer includes a light-emitting stacked layer and a first electrode; A passivation layer and a second electrode are formed in sequence; the passivation layer includes a first passivation portion and a second passivation portion; the first passivation portion covers a surface of the light-emitting stacked layer away from the first electrode; the first passivation portion is provided with a first via hole, and the second electrode is connected to the light-emitting stacked layer through the first via hole; The second substrate is removed.

22. The method for preparing a light-emitting device according to claim 21, wherein: The step of connecting the first electrodes of the plurality of transfer epitaxial wafers to the second substrate comprises: forming a plurality of bonding bumps on the second substrate; The first electrode of each transfer epitaxial wafer is bonded to at least two bonding protrusions.

23. The method for preparing a light-emitting device according to claim 21, wherein: The step of connecting the first electrodes of the plurality of transfer epitaxial wafers to the second substrate comprises: forming a second adhesive layer on the second substrate; The first electrodes of the plurality of transfer epitaxial wafers are bonded to the second bonding layer.

24. The method for preparing a light-emitting device according to claim 21, wherein: The step of connecting the first electrodes of the plurality of transfer epitaxial wafers to the second substrate comprises: A third adhesive layer and a bonding layer are formed on the second substrate; the thickness of the third adhesive layer is The first electrodes of the plurality of transfer epitaxial wafers are bonded to the bonding layer.

25. The method for preparing a light-emitting device according to any one of claims 21 to 24, wherein: The patterning of the transfer epitaxial wafer comprises: The light-emitting stacked layer and the first electrode are patterned simultaneously through a single dry etching process.

26. The method for preparing a light-emitting device according to claim 25, wherein: Before simultaneously patterning the light-emitting stacked layer and the first electrode through a single dry etching process, patterning the transfer epitaxial wafer further includes: A hard mask layer is formed on a side of the transfer epitaxial wafer away from the second substrate; the hard mask layer covers a surface of the light-emitting stacked layer away from the first electrode.

27. The method for preparing a light-emitting device according to any one of claims 21 to 24, wherein: The patterning of the transfer epitaxial wafer comprises: The light-emitting stacked layer and the first electrode are patterned respectively through two dry etching processes, so that the boundary of the light-emitting stacked layer is retracted compared to the boundary of the first electrode.

28. The method for preparing a light-emitting device according to claim 27, wherein: At least two adjacent light-emitting devices, one of which is a first light-emitting device and the other of which is a second light-emitting device; The sequentially forming of the passivation layer and the second electrode comprises: Form a passivation layer; the passivation layer of the first light emitting device is a first passivation layer, and the passivation layer of the second light emitting device is a The second passivation layer is a second passivation portion of the first passivation layer, which is retracted relative to the boundary of the first electrode. The second passivation portion of the second passivation layer includes a first sub-portion and a second sub-portion, wherein the first sub-portion covers the sidewalls of the light-emitting stacked layer and the sidewalls of the first electrode, and faces the second passivation layer. The second sub-portion covers the sidewalls of the light-emitting stacked layer and is located on the edge portion of the first electrode that extends beyond the light-emitting stacked layer. forming a reflective layer; the reflective layer is disposed on a side of the passivation layer away from the light-emitting stack layer; the reflective layer of the first light-emitting device is a first reflective layer, and the reflective layer of the second light-emitting device is a second reflective layer; the second reflective layer covers a first sub-portion of the second passivation layer and is connected to a portion of the first electrode of the first light-emitting device that extends beyond the first passivation layer; A second electrode is formed; the second electrode is disposed on a side of the reflective layer away from the light-emitting stack layer and is connected to the reflective layer.

29. The method for preparing a light-emitting device according to claim 27, wherein: Of at least two adjacent light-emitting devices, one is a third light-emitting device and the other is a fourth light-emitting device; The sequentially forming of the passivation layer and the second electrode comprises: forming a passivation layer; the passivation layer of the third light-emitting device is the third passivation layer, and the passivation layer of the fourth light-emitting device is the fourth passivation layer; the second passivation portion of the third passivation layer is retracted relative to the boundary of the first electrode; the second passivation portion of the fourth passivation layer includes a first sub-portion and a second sub-portion, the first sub-portion covers the sidewalls of the light-emitting stacked layer and the sidewalls of the first electrode, and the first sub-portion faces the fourth passivation layer; the second sub-portion covers the sidewalls of the light-emitting stacked layer and is located on the edge portion of the first electrode that extends beyond the light-emitting stacked layer; forming a reflective layer; the reflective layer is disposed on a side of the passivation layer away from the light-emitting stack layer, and an orthographic projection of the reflective layer on the driving backplane is within the range of the orthographic projection of the passivation layer on the driving backplane; forming a first flat layer; the first flat layer is disposed on a side of the reflective layer away from the light-emitting stack layer; and the first flat layer is provided with a third via hole; A second electrode is formed; the second electrode is arranged on a side of the reflective layer away from the light-emitting stack layer, and the second electrode of the third light-emitting device is connected to the portion of the first electrode of the fourth light-emitting device that extends beyond the passivation layer through the third via hole.

30. The method for preparing a light-emitting device according to any one of claims 24 to 29, wherein: After patterning the light-emitting stack layer and the first electrode through a dry etching process, patterning the transfer epitaxial wafer further includes: The side walls of the light-emitting stacked layer and the first electrode are etched by a wet etching process, so that the crystals with non-polar surfaces exposed on the side walls of the light-emitting stacked layer are removed.

31. The method for preparing a light-emitting device according to any one of claims 21 to 30, wherein: The preparation of the transfer epitaxial wafer comprises: forming an epitaxial wafer on a third substrate; the epitaxial wafer includes a light-emitting stacked layer; forming a first adhesive layer on the first substrate; connecting the first substrate having the first adhesive layer attached thereto to the epitaxial wafer; removing the third substrate; A first electrode is formed on a side of the epitaxial wafer away from the first substrate.

32. The method for preparing a light-emitting device according to any one of claims 21 to 30, wherein: The preparation of the transfer epitaxial wafer comprises: forming an epitaxial wafer on a first substrate; the epitaxial wafer includes a light-emitting stacked layer; A first electrode is formed on a side of the epitaxial wafer away from the first substrate.

33. A method for preparing a light-emitting substrate, comprising: A light-emitting device is prepared by using the method for preparing a light-emitting device according to any one of claims 21 to 32; Arranging a plurality of the light-emitting devices on a fourth substrate in a preset arrangement; The fourth substrate is removed, and the arranged light-emitting devices are connected to a driving backplane.

34. The method for preparing a light-emitting substrate according to claim 33, further comprising: forming a surface electrode; The surface electrode is arranged on a side of the light emitting device away from the driving backplane and is connected to the first electrode of the light emitting device; An auxiliary cathode is formed by using a digital exposure process; the auxiliary electrode is arranged on a side of the surface electrode away from the driving back plate and is connected to the surface electrode; The auxiliary electrode is provided with a plurality of openings, each of the openings exposing one of the light-emitting devices; and the shape of the orthographic projection of the opening on the driving backplane is the same as the shape of the orthographic projection of the light-emitting device on the driving backplane; forming a packaging portion; The orthographic projection of one of the light-emitting devices on the driving backplane is located within the range of the orthographic projection of one of the packaging parts on the driving backplane.

Images