Semiconductor process apparatus and control method therefor

Abstract

A semiconductor process apparatus and a control method therefor. The disclosed semiconductor process apparatus comprises a reaction chamber and a heating assembly. A chamber body (110) comprises two transparent quartz parts (101) respectively located above and below a base (120), and the heating assembly is arranged on the side of the at least one transparent quartz part (101) facing away from the base (120). The heating assembly comprises a first infrared heating member (200) and a second infrared heating member (300); the first infrared heating member (200) is used for emitting first infrared light within a first wavelength range, such that the first infrared light passes through the transparent quartz part (101) to reach the base (120); the second infrared heating member (300) is used for emitting second infrared light within a second wavelength range. The transmittance of the transparent quartz part (101) to the first infrared light is greater than 90%, the transmittance thereof to the second infrared light is less than 5%, and the rest is absorbed and reflected. The described solution can solve the problems in the related art that semiconductor process apparatuses are prone to coating deposition, and increasing the etching amount to solve the coating problem leads to over-etching of the whole reaction chambers.

Description

Semiconductor process equipment and control method thereof Technical Field

[0001] The present application relates to the technical field of semiconductor process equipment, and in particular to a semiconductor process equipment and a control method thereof. Background Art

[0002] When semiconductor processing equipment grows epitaxial layers on substrates, a coating is inevitably deposited throughout the reaction chamber. This coating varies in thickness throughout the reaction chamber, affecting heating field uniformity, thermal efficiency, and, consequently, process consistency. Therefore, it is necessary to remove this coating.

[0003] In the related art, the etching gas is introduced into the reaction chamber to etch the coating at high temperature to ensure the cleanliness of the reaction chamber and the consistency of the process environment. The reaction chamber is usually provided with a transparent part for the infrared light emitted by the infrared heating element to pass through and reach the base in the reaction chamber. Since the transparent part has a high transmittance to the infrared light used to heat the base, the heat absorption of the transparent part is poor. Therefore, the temperature of the transparent part is usually lower than that of other parts of the reaction chamber, resulting in a relatively thick coating on the transparent part and uneven thickness. When etching the coating in the reaction chamber, in order to ensure the etching effect of the coating on the transparent part, the amount of etching gas introduced is usually increased, the overall etching temperature is increased, or the etching time is extended, which can easily lead to over-etching of other parts in the reaction chamber, and also reduce energy utilization and increase the proportion of time the etching process occupies the machine.

[0004] Summary of the Invention

[0005] The present application discloses a semiconductor process equipment and a control method thereof, in order to solve the problem in the related art that semiconductor process equipment is prone to deposition and coating, and the problem that the etching amount is increased to solve the coating problem, resulting in over-etching of the entire reaction chamber.

[0006] In order to solve the above technical problems, this application is implemented as follows:

[0007] In a first aspect, the present application discloses a semiconductor process equipment, wherein the disclosed semiconductor process equipment includes a reaction chamber and a heating assembly;

[0008] The reaction chamber includes a chamber body and a base, wherein the base is arranged in the chamber body, and the chamber body includes two transparent quartz parts respectively located above and below the base;

[0009] The heating component is provided on a side of at least one of the transparent quartz parts facing away from the base;

[0010] The heating assembly includes a first infrared heating element and a second infrared heating element;

[0011] The first infrared heating element is configured to emit first infrared light in a first wavelength range, so that the first infrared light passes through the transparent quartz portion and reaches the base;

[0012] The second infrared heating element is configured to emit second infrared light in a second wavelength range so that the second infrared light reaches the transparent quartz portion;

[0013] The transmittance of the transparent quartz portion to the first infrared light is greater than 90%, and the transmittance to the second infrared light is less than 5%.

[0014] In a second aspect, the present application further discloses a control method for semiconductor process equipment, wherein the semiconductor process equipment is the semiconductor process equipment described in the first aspect, and further comprises a detection device and a first drive mechanism, wherein the first drive mechanism is connected to the second infrared heating element;

[0015] The control method includes:

[0016] controlling the first infrared heating element to emit first infrared light in a first wavelength range so that the first infrared light passes through the transparent quartz portion and reaches the base;

[0017] controlling the detection device to detect the coating thickness of the plurality of target areas;

[0018] determining the target area that needs to be heated among the multiple target areas according to the coating thickness;

[0019] The first driving mechanism is controlled to drive the second infrared heating element to move, so that the second infrared light emitted by the second infrared heating element is projected onto the target area to be heated.

[0020] The technical solution adopted in this application can achieve the following technical effects:

[0021] The semiconductor process equipment disclosed in the embodiment of the present application is provided with a first infrared heating element and a second infrared heating element, so that when the semiconductor process equipment is in process mode, the first infrared light is emitted by the first infrared heating element, so that the first infrared light passes through the transparent quartz part and reaches the base, so that the first infrared light can better heat the base, and the second infrared light is emitted by the second infrared heating element, so that the second infrared light reaches the transparent quartz part. Since the transparent quartz part has a low transmittance and good absorption effect on the second infrared light, the second infrared light can better heat the transparent quartz part without affecting the temperature of the base, thereby increasing the temperature of the transparent quartz part, thereby reducing the temperature difference between the transparent quartz part and other parts of the chamber body, and further slowing down the rate of coating deposition on the transparent quartz part, so that in the process mode, the thickness difference of the coating at the position of the transparent quartz part and the position of other parts of the chamber body can be reduced, and thus when etching the coating, excessive etching of other parts of the chamber body can be avoided. Moreover, as the temperature of the transparent quartz part increases, the rate of its coating deposition decreases, thereby alleviating the shielding of the first infrared light by the coating on the transparent quartz part, thereby facilitating the uniformity of the first infrared light heating the base and also facilitating the cleanliness of the chamber body. BRIEF DESCRIPTION OF THE DRAWINGS

[0022] FIG1 is an overall schematic diagram of a semiconductor process equipment disclosed in an embodiment of the present application;

[0023] FIG2 shows the transmittance of the quartz material disclosed in the embodiments of the present application for infrared light of various wavelength ranges;

[0024] FIG3 is a schematic diagram showing the distribution of the second infrared heating element and the filter disclosed in an embodiment of the present application;

[0025] FIG4 is a schematic diagram of the cooperation between the first driving mechanism and the second infrared heating element disclosed in an embodiment of the present application;

[0026] FIG5 is a schematic structural diagram of a second driving mechanism disclosed in an embodiment of the present application;

[0027] FIG6 is a flow chart of a method for controlling semiconductor process equipment disclosed in an embodiment of the present application.

[0028] Explanation of the accompanying drawings: 110-chamber body, 101-transparent quartz part, 102-insulating part, 111-upper quartz cover, 112-lower quartz cover, 113-annular base, 114-fixing flange, 115-upper guard wall, 116-lower guard wall, 117-preheating ring, 119-sealing member, 120-base, 200-first infrared heating element, 300-second infrared heating element, 310-first light-emitting body, 320-lampshade, 400-detection device, 500-first driving mechanism, 510-first driving body, 520-cam, 600-third infrared heating element, 700-second driving mechanism, 710-driving base, 720-spherical rotating part, 800-filter. DETAILED DESCRIPTION

[0029] To make the objectives, technical solutions, and advantages of this application more clear, the technical solutions of this application will be clearly and completely described below in conjunction with the specific embodiments of this application and the corresponding drawings. Obviously, the embodiments described are only part of the embodiments of this application, not all of them. Based on the embodiments in this application, all other embodiments obtained by ordinary technicians in this field without making creative efforts are within the scope of protection of this application.

[0030] The technical solutions disclosed in various embodiments of the present application are described in detail below with reference to the accompanying drawings.

[0031] Please refer to FIG. 1 to FIG. 5 , an embodiment of the present application discloses a semiconductor process equipment, and the disclosed semiconductor process equipment includes a reaction chamber and a heating assembly.

[0032] The reaction chamber includes a chamber body 110 and a susceptor 120, which is disposed within the chamber body 110. The chamber body 110 includes two transparent quartz sections 101, one above and one below the susceptor 120. A heating assembly is disposed on the side of at least one of the transparent quartz sections 101 facing away from the susceptor 120. For example, the transparent quartz section 101 above the susceptor has a heating assembly disposed above it; alternatively, the transparent quartz section 101 below the susceptor has a heating assembly disposed below it; alternatively, both transparent quartz sections 101 may each have a set of heating assemblies disposed on the side facing away from the susceptor 120.

[0033] Exemplarily, the heating assembly includes a first infrared heating element 200 and a second infrared heating element 300. The first infrared heating element 200 is configured to emit first infrared light within a first wavelength range, such that the first infrared light passes through the transparent quartz portion 101 and reaches the base 120. The second infrared heating element 300 is configured to emit second infrared light within a second wavelength range, such that the second infrared light reaches the transparent quartz portion 101. The transparent quartz portion 101 has a transmittance greater than 90% for the first infrared light and a transmittance less than 5% for the second infrared light, with the remainder being absorbed and reflected.

[0034] It should be noted that because the transparent quartz portion 101 has a transmittance greater than 90% for the first infrared light and a transmittance less than 5% for the second infrared light, with the remainder being absorbed and reflected, when the first infrared heating element 200 emits first infrared light within a first wavelength range, the first infrared light can effectively pass through the transparent quartz portion 101 and reach the base 120, thereby heating the base 120. When the second infrared heating element 300 emits second infrared light within a second wavelength range, the second infrared light reaches the transparent quartz portion 101, has an extremely low transmittance, and is effectively absorbed and reflected by the transparent quartz portion 101, thereby effectively heating the transparent quartz portion 101 without affecting the temperature of the base 120.

[0035] In a specific application, when the semiconductor process equipment is in a process mode (e.g., a process mode in which the semiconductor process equipment delivers reaction gases into the chamber body 110 to perform epitaxial growth on a substrate on the susceptor 120), the susceptor 120 needs to be heated. The first infrared heating element 200 can emit first infrared light in a first wavelength range, so that the first infrared light passes through the transparent quartz portion 101 and reaches the susceptor 120, thereby effectively heating the susceptor 120. It should be noted that because the transparent quartz portion 101 has a good transmittance for the first infrared light and a poor heat absorption property for the first infrared light, if only the first infrared heating element 200 is provided, the temperature of the transparent quartz portion 101 is generally lower than the temperature of other parts in the chamber body 110, making it easier for a coating to be deposited on the transparent quartz portion 101. In the embodiment of the present application, a second infrared heating element 300 is further provided, which emits a second infrared light so that the second infrared light reaches the transparent quartz portion 101. Since the transparent quartz portion 101 has a good absorption effect on the second infrared light, the second infrared light can effectively heat the transparent quartz portion 101.

[0036] The semiconductor process equipment disclosed in the embodiment of the present application is provided with a first infrared heating element 200 and a second infrared heating element 300, so that when the semiconductor process equipment is in process mode, the first infrared heating element 200 emits a first infrared light, so that the first infrared light passes through the transparent quartz portion 101 and reaches the base 120, so that the first infrared light can better heat the base 120, and the second infrared heating element 300 emits a second infrared light, so that the second infrared light reaches the transparent quartz portion 101, because the transparent quartz portion 101 has a lower transmittance and better absorption effect on the second infrared light. , so that the second infrared light can effectively heat the transparent quartz portion 101 without affecting the temperature of the susceptor 120, thereby increasing the temperature of the transparent quartz portion 101, thereby reducing the temperature difference between the transparent quartz portion 101 and other parts of the chamber body 110, and thus slowing the rate of coating deposition on the transparent quartz portion 101. Therefore, in the process mode, the thickness difference between the transparent quartz portion 101 and other parts of the chamber body 110 can be reduced, thereby avoiding excessive etching of other parts of the chamber body 110 during etching of the coating. Moreover, due to the increase in the temperature of the transparent quartz portion 101, the rate of coating deposition is reduced, thereby alleviating the shielding of the first infrared light by the coating on the transparent quartz portion 101, thereby promoting the uniformity of the heating of the susceptor 120 by the first infrared light, and also promoting the cleanliness of the chamber body 110.

[0037] Since the etching rate of the coating is related to the temperature, the lower the temperature of the chamber body, the lower the etching rate of the coating. In the related art, due to the poor heat absorption of the transparent quartz part, the temperature of the transparent quartz part is usually lower than the temperature of other parts of the chamber body in the cleaning mode (i.e., the process mode in which etching gas is introduced into the chamber body to etch the coating), so that the etching rate of the coating on the transparent quartz part is lower than the etching rate of the coating on other parts of the chamber body. In order to ensure better cleaning of the coating on the transparent quartz part, the power of the first infrared heating element 200 is usually increased to increase the overall temperature of the chamber body. Therefore, it is easy to cause over-etching of other parts of the chamber body and shorten the life of related components such as seals, gold-plated reflectors, and heating lamps caused by the high temperature of the chamber body.

[0038] Therefore, in further applications of the embodiments of the present application, when the semiconductor process equipment is in a cleaning mode (i.e., a process mode in which an etching gas is introduced into the chamber body 110 to etch the coating), the second infrared heating element 300 can emit a second infrared light, so that the second infrared light reaches the transparent quartz portion 101 and is absorbed and reflected by the transparent quartz portion 101, thereby increasing the temperature of the transparent quartz portion 101 and thereby increasing the etching rate of the coating on the transparent quartz portion 101. This can avoid the problem of over-etching other parts of the chamber body 110 in order to ensure a good cleaning of the coating on the transparent quartz portion 101. Moreover, there is no need to extend the etching time to ensure a good cleaning of the coating on the transparent quartz portion 101, thereby improving the cleaning efficiency of the semiconductor process equipment. Of course, it is also possible to reduce the heating power of the first infrared heating element 200 to reduce the overall temperature of the chamber body 110, thereby extending the service life of the first infrared heating element 200, the gold-plated reflective plate, and the chamber seal related to the heating of the chamber body 110.

[0039] Specifically, since transparent quartz portion 101 is made of quartz, as shown in FIG2 , the transmittance of the quartz material for infrared light in various wavelength ranges. To ensure that the transmittance of the first infrared light through transparent quartz portion 101 is greater than 90%, the first wavelength range can be 1 μm-3 μm. To ensure that the transmittance of the second infrared light through transparent quartz portion 101 is less than 5%, the second wavelength range can be 5 μm-20 μm.

[0040] Of course, in the embodiment of the present application, the transparent quartz portion 101 may also be replaced with other transparent materials, and the corresponding selected first wavelength range and second wavelength range may also be different.

[0041] In actual applications, the transparent quartz portion 101 may have an uneven coating thickness. Therefore, when the semiconductor processing equipment is in process mode, the uneven coating thickness on the transparent quartz portion 101 will affect the uniformity of the first infrared light emitted by the first infrared heating element 200 reaching the susceptor 120, thereby affecting the temperature uniformity of the susceptor 120. When the semiconductor processing equipment is in cleaning mode, the uneven coating thickness on the transparent quartz portion 101 will affect the uniformity of etching, easily causing over-etching in areas of the transparent quartz portion 101 with lower coating thickness.

[0042] To address the above issues, in some embodiments, the transparent quartz portion 101 may include multiple target areas, and the semiconductor process equipment may further include a detection device 400 and a first drive mechanism 500. The first drive mechanism 500 may be connected to the second infrared heating element 300. The detection device 400 may be used to detect the coating thickness of the multiple target areas. The first drive mechanism 500 may be used to drive the second infrared heating element 300 to move so that the second infrared light emitted by the second infrared heating element 300 can be projected onto any of the multiple target areas.

[0043] It should be noted that after the detection device 400 detects the coating thickness of multiple target areas, the target area to be heated can be determined based on the coating thickness of the multiple target areas. The second infrared heating element 300 can then be driven by the first driving mechanism 500 to move so that the second infrared light emitted by the second infrared heating element 300 is projected onto the target area to be heated. The control logic for determining the target area to be heated based on the coating thickness of the multiple target areas can be designed according to actual needs and will not be further described in this application.

[0044] The semiconductor process equipment disclosed in the embodiment of the present application divides the transparent quartz portion 101 into multiple target areas, so that the detection device 400 can detect the coating thickness of the multiple target areas, and thus the second infrared heating element 300 can be driven to move by the first driving mechanism 500 so that the second infrared light emitted by the second infrared heating element 300 can be projected onto any target area in the multiple target areas. Therefore, when the semiconductor process equipment is in process mode, the target area to be heated can be determined based on the coating thickness of the multiple target areas (for example, the target area with the largest coating thickness, or the target area whose coating thickness difference with other target areas exceeds a preset thickness difference). The target area to be heated is heated by the second infrared light to adjust the coating deposition rate of the target area to be heated, thereby adjusting the uniformity of the coating thickness on the transparent quartz portion 101, thereby improving the uniformity of the heating of the base 120 by the first infrared light, and thus improving the temperature uniformity of the base 120. When the semiconductor process equipment is in the cleaning mode, the target area to be heated can be determined based on the coating thickness of multiple target areas. The target area to be heated is heated by the second infrared light to adjust the etching rate of the target area to be heated, thereby improving the uniformity of etching the coating on the transparent quartz part 101 and avoiding over-etching of the area of ​​the transparent quartz part 101 with a lower coating thickness.

[0045] For example, based on the coating thicknesses of multiple target areas, the target area with the thickest coating thickness can be determined. When the semiconductor process equipment is in process mode, the second infrared light emitted by the second infrared heating element 300 can be projected onto the target area with the thickest coating thickness, which can slow down the coating deposition rate of the corresponding target area, thereby making the coating thickness of the transparent quartz portion 101 relatively uniform, which is beneficial to the uniformity of heating the base 120 when the first infrared heating element 200 heats the base 120. When the semiconductor process equipment is in cleaning mode, the second infrared light emitted by the second infrared heating element 300 can be projected onto the target area with the thickest coating thickness, which can increase the etching rate of the corresponding target area, thereby alleviating over-etching of the target area with a lower coating thickness on the transparent quartz portion 101. In particular, the detection device 400 can determine the target area with the thickest coating thickness in real time. After the target area with the thickest coating thickness changes, the target area heated by the second infrared heating element 300 also changes accordingly.

[0046] It should be noted that when the entire area of ​​the transparent quartz part 101 needs to be irradiated with the second infrared light, the first driving mechanism 500 can drive the second infrared heating element 300 to sequentially irradiate multiple target areas of the transparent quartz part 101, thereby achieving irradiation of the entire area of ​​the transparent quartz part 101.

[0047] It should be further explained that the detection device 400 can be a monitoring camera, and the semiconductor process equipment can also include an intelligent recognition control system. The monitoring camera can move within a certain range to detect the coating thickness of multiple target areas, and record the surface conditions of multiple target areas in real time, and transmit the data to the intelligent recognition control system. The intelligent recognition control system performs big data analysis based on the surface discoloration of the multiple target areas, thereby determining the target area that needs to be heated among the multiple target areas. After determining the target area that needs to be heated, the intelligent recognition control system can control the first drive mechanism 500 to drive the second infrared heating element 300 to move, so that the second infrared light emitted by the second infrared heating element 300 is projected onto the target area that needs to be heated. The detection device 400 can be set at a position of 1 / 4 or 3 / 4 of the diameter of the transparent quartz part 101 along the diameter direction of the transparent quartz part 101.

[0048] In some embodiments, the first infrared heating element 200 can be arranged opposite to and spaced apart from the transparent quartz portion 101. Each heating component can include multiple first infrared heating elements 200. The multiple first infrared heating elements 200 of each heating component can be arranged in sequence around the central axis perpendicular to the supporting surface of the base 120 and arranged adjacent to the edge of the transparent quartz portion 101 in the extension direction of the transparent quartz portion 101.

[0049] In some embodiments, the chamber body 110 may include an upper quartz cover 111, a lower quartz cover 112, an annular base 113, and a fixing flange 114. The edges of the upper quartz cover 111 and the edges of the lower quartz cover 112 may be connected to opposite sides of the annular base 113 via the fixing flange 114, so that the upper quartz cover 111, the lower quartz cover 112, and the annular base 113 form an inner cavity of the chamber body 110. The base 120 may be disposed in the inner cavity. The upper quartz cover 111 and the lower quartz cover 112 may each include a transparent quartz portion 101. The second infrared heating element 300 may be disposed on the fixing flange 114.

[0050] The semiconductor process equipment disclosed in the embodiment of the present application discloses a specific structure of the chamber body 110, so that the fixing flange 114 can not only be used to connect the edge of the upper quartz cover 111 and the annular base 113, and to connect the edge of the lower quartz cover 112 and the annular base 113, but also serve as the installation base of the second infrared heating element 300, thereby facilitating the compactness of the semiconductor process equipment.

[0051] Furthermore, the second infrared heating element 300 may include a plurality of first light emitters 310 , and the plurality of first light emitters 310 may be arranged around the transparent quartz portion 101 , thereby facilitating more comprehensive irradiation of the transparent quartz portion 101 by the second infrared heating element 300 .

[0052] In some embodiments, the center of the transparent quartz portion 101 can protrude relative to the edge of the transparent quartz portion 101 in a direction away from the base 120. The semiconductor processing equipment can further include a plurality of first driving mechanisms 500, each corresponding to the plurality of first light-emitting bodies 310. The first driving mechanisms 500 can be connected to the corresponding first light-emitting bodies 310 to drive the first light-emitting bodies 310 to rotate, so that the second infrared light emitted by the first light-emitting bodies 310 can be projected to any position on the transparent quartz portion 101 in a direction from the edge of the transparent quartz portion 101 to the center of the transparent quartz portion 101. Specifically, by allowing the center of the transparent quartz portion 101 to protrude relative to the edge of the transparent quartz portion 101 in a direction away from the base 120, the center and edge of the transparent quartz portion 101, as well as any position therebetween, are located at different positions in the vertical direction. On this basis, the first driving mechanism 500 drives the first light-emitting element 310 to rotate to adjust the pitch angle of the first light-emitting element 310, so that the direction of the second infrared light emitted by the first light-emitting element 310 can be oriented toward the center or edge of the transparent quartz portion 101, as well as any position therebetween. The pitch angle of the first light-emitting element 310 is the angle at which it is tilted upward or downward relative to the horizontal direction.

[0053] The semiconductor process equipment disclosed in the embodiment of the present application is configured such that the center of the transparent quartz portion 101 is convex relative to the edge in a direction away from the base 120, so that the first driving mechanism 500 can drive the corresponding first light-emitting body 310 to rotate, so that the second infrared light emitted by the first light-emitting body 310 can be projected to any position of the transparent quartz portion 101 in the direction from the edge of the transparent quartz portion 101 to the center of the transparent quartz portion 101, thereby emitting the second infrared light at any position along the direction from the edge of the transparent quartz portion 101 to the center of the transparent quartz portion 101.

[0054] Specifically, the first driving mechanism 500 may include a first driving body 510 and a cam 520 connected to the first driving body 510. The second infrared heating element 300 may also include a lampshade 320. The first light-emitting body 310 may be arranged in the lampshade 320. The lampshade 320 may be connected to the cam 520. The first driving body 510 may be used to drive the cam 520 to rotate, so that the lampshade 320 drives the first light-emitting body 310 to rotate.

[0055] The semiconductor processing equipment disclosed in the embodiment of the present application is provided with a lampshade 320, so that the first light-emitting body 310 can be disposed within the lampshade 320, so that the lampshade 320 can have a focusing effect on the second infrared light emitted by the first light-emitting body 310, thereby increasing the intensity of the second infrared light emitted by the first light-emitting body 310. The first driving mechanism 500 is configured to include a first driving body 510 and a cam 520 connected to the first driving body 510, so that the first driving body 510 can drive the cam 520 to move the lampshade 320, so that the lampshade 320 drives the first light-emitting body 310 to move, thereby simplifying the method by which the first driving body 510 drives the first light-emitting body 310 to move.

[0056] Specifically, the lampshade 320 can be set as a structure that rotates along a fixed axis. The lampshade 320 can be provided with a groove. At least part of the cam 520 can extend into the groove and rotate with the groove, thereby improving the stability of the cooperation between the cam 520 and the lampshade 320. The first driving body 510 can drive the cam 520 to rotate to drive the lampshade 320 to rotate around the fixed axis, thereby realizing the movement of the first light-emitting body 310.

[0057] In some embodiments, the semiconductor process equipment may further include a filter 800 , which may be disposed on the light-emitting side of the second infrared heating element 300 to filter light with a wavelength less than 5 μm in the second infrared light, thereby preventing the light with a wavelength less than 5 μm emitted by the second infrared heating element 300 from passing through the transparent quartz portion 101 .

[0058] In order to more accurately heat a local area of ​​the transparent quartz part 101, in some embodiments, the heating component may further include a third infrared heating element 600 and a second driving mechanism 700. The second driving mechanism 700 can be connected to the third infrared heating element 600 to drive the third infrared heating element 600 to move, so that the third infrared light emitted by the third infrared heating element 600 is projected to any position of the transparent quartz part 101. The third infrared heating element 600 can be a laser heating lamp, and the wavelength range of the third infrared light is within the second wavelength range. The transmittance of the transparent quartz part 101 to the third infrared light can be less than 5%, and good absorption and reflection can be achieved.

[0059] The semiconductor process equipment disclosed in the embodiment of the present application is provided with a third infrared heating element 600 and a second driving mechanism 700, and the third infrared heating element 600 is set as a laser heating lamp, and the transparent quartz part 101 can have a transmittance of less than 5% for the third infrared light, which can achieve good absorption and reflection. Since the laser heating lamp has the characteristics of high brightness, good directionality, and small light dispersion, the second driving mechanism 700 can drive the third infrared heating element 600 to move, so that the third infrared heating element 600 can heat any target area of ​​the transparent quartz part 101, thereby improving the heating capacity of the local area of ​​the transparent quartz part 101.

[0060] It should be noted that the first infrared heating element 200 and the second infrared heating element 300 can be halogen heating elements, or other infrared heating elements. The present embodiment does not impose any specific restrictions on the types of the first infrared heating element 200 and the second infrared heating element 300. The wavelength range of the third infrared light is within the second wavelength range. Preferably, the wavelength of the third infrared light can be 10.6 μm.

[0061] Specifically, the third infrared heating element 600 can be spaced apart from and opposite to the transparent quartz portion 101, and the distance between the third infrared heating element 600 and the transparent quartz portion 101 is greater than the distance between the first infrared heating element 200 and the transparent quartz portion 101. Each heating assembly can include multiple third infrared heating elements 600. The multiple third infrared heating elements 600 of each heating assembly can be sequentially spaced around a central axis perpendicular to the supporting surface of the base 120 and positioned closer to the center of the transparent quartz portion 101 relative to the first infrared heating element 200 in the extension direction of the transparent quartz portion 101.

[0062] In some embodiments, the heating component may further include a fourth infrared heating element and a second driving mechanism 700. The second driving mechanism 700 can be connected to the fourth infrared heating element to drive the fourth infrared heating element to move so that the fourth infrared light emitted by the fourth infrared heating element (the wavelength range of the fourth infrared light is within the first wavelength range, preferably, the wavelength range of the fourth infrared light is 630nm~1000nm) passes through the transparent quartz part 101 and is projected to any position of the base 120, wherein the fourth infrared heating element can be a laser heating lamp, and the transmittance of the transparent quartz part 101 to the fourth infrared light can be greater than 90%.

[0063] The semiconductor process equipment disclosed in the embodiment of the present application is provided with a fourth infrared heating element and a second driving mechanism 700, and the fourth infrared heating element is set as a laser heating lamp, and the transmittance of the transparent quartz part 101 to the fourth infrared light is greater than 90%. Since the laser heating lamp has the characteristics of high brightness, good directionality, and small light dispersion, the second driving mechanism 700 can drive the fourth infrared heating element to move, so that the fourth infrared heating element can heat any target position of the base 120, thereby improving the heating capacity of the local area of ​​the base 120, which is beneficial to adjust the temperature uniformity of the base 120.

[0064] Specifically, the fourth infrared heating element can be arranged opposite and spaced apart from the transparent quartz portion 101, and the distance between the fourth infrared heating element and the transparent quartz portion 101 is greater than the distance between the first infrared heating element 200 and the transparent quartz portion 101. Each heating assembly can include multiple fourth infrared heating elements (preferably four). The multiple fourth infrared heating elements of each heating assembly can be arranged in sequence and spaced apart around a central axis perpendicular to the supporting surface of the base 120, and positioned closer to the center of the transparent quartz portion 101 relative to the first infrared heating element 200 in the extension direction of the transparent quartz portion 101.

[0065] In some embodiments, the second driving mechanism 700 may include a driving base 710 and a spherical rotating part 720. The spherical rotating part 720 can be movably arranged on the driving base 710 and can rotate in any direction relative to the driving base 710. The third infrared heating element 600 or the fourth infrared heating element can be arranged on the spherical rotating part 720.

[0066] The semiconductor process equipment disclosed in the embodiment of the present application is configured such that the second driving mechanism 700 includes a driving base 710 and a spherical rotating portion 720, so that the spherical rotating portion 720 can be movably arranged on the driving base 710 and can rotate in any direction relative to the driving base 710, thereby enabling the driving base 710 to drive the third infrared heating element 600 or the fourth infrared heating element to rotate in any direction through the spherical rotating portion 720.

[0067] In the case where the semiconductor process equipment includes the detection device 400, the detection device 400 can also be arranged on the spherical rotating part 720, so that the driving base 710 can drive the detection device 400 to rotate in any direction through the spherical rotating part 720, thereby facilitating the detection device 400 to detect the coating thickness at any position of the transparent quartz part 101.

[0068] In some embodiments, the edges of the upper quartz cover 111 and the lower quartz cover 112 can each include an insulating portion 102 surrounding the transparent quartz portion 101. The insulating portions 102 of the upper quartz cover 111 and the lower quartz cover 112 can be connected to opposite sides of the annular base 113 via fixing flanges 114. The chamber body 110 can also include an upper protective wall 115, a lower protective wall 116, and a preheating ring 117. The upper protective wall 115 and the lower protective wall 116 can be disposed within the inner cavity of the chamber body 110 and connected to the annular base 113. The upper protective wall 115 and the lower protective wall 116 can be used to protect the annular base 113. The preheating ring 117 can be disposed on the lower protective wall 116. The base 120 can be connected to the preheating ring 117, or a bracket can be provided below for support. The annular base 113 , the fixing flange 114 and the heat insulating portion 102 are all provided with sealing members 119 at their connections, thereby ensuring the sealing of the chamber body 110 .

[0069] The present application also discloses a control method for semiconductor process equipment. The disclosed semiconductor process equipment is the semiconductor process equipment disclosed in the above embodiment. The semiconductor process equipment also includes a detection device 400 and a first drive mechanism 500. The first drive mechanism 500 is connected to the second infrared heating element 300.

[0070] Referring to FIG. 6 , the disclosed control method includes:

[0071] S101 : controlling the first infrared heating element 200 to emit first infrared light within a first wavelength range, so that the first infrared light passes through the transparent quartz portion 101 and reaches the base 120 .

[0072] S102: Control the detection device 400 to detect the coating thickness of multiple target areas.

[0073] S103: Determine a target area that needs to be heated among the multiple target areas according to the coating thickness.

[0074] S104: controlling the first driving mechanism 500 to drive the second infrared heating element 300 to move, so that the second infrared light emitted by the second infrared heating element 300 is projected onto the target area to be heated.

[0075] It should be noted that the various steps in the control method disclosed in the embodiment of the present application have the same or similar functions as the functions implemented by the various components of the semiconductor process equipment disclosed in the above embodiments, and they can be referenced to each other.

[0076] The control method for semiconductor process equipment disclosed in an embodiment of the present application can, when the semiconductor process equipment is in process mode, determine target areas requiring heating based on the coating thicknesses of multiple target areas, heat the target areas requiring heating using a second infrared light beam to adjust the coating deposition rate in the target areas requiring heating, thereby adjusting the uniformity of the coating thickness on the transparent quartz portion 101, thereby improving the uniformity of heating the susceptor 120 by the first infrared light beam, and thereby improving the temperature uniformity of the susceptor 120. When the semiconductor process equipment is in cleaning mode, the target areas requiring heating can be determined based on the coating thicknesses of multiple target areas, heat the target areas requiring heating using a second infrared light beam to adjust the etching rate in the target areas requiring heating, thereby improving the uniformity of etching the coating on the transparent quartz portion 101 and avoiding over-etching of areas of the transparent quartz portion 101 with lower coating thickness.

[0077] The above embodiments of this application focus on the differences between the various embodiments. As long as the different optimization features between the various embodiments are not contradictory, they can be combined to form a better embodiment. Considering the simplicity of the text, they will not be repeated here.

[0078] In some embodiments, the heating assembly may further include a third infrared heating element 600 and a second driving mechanism 700 . The second driving mechanism 700 may be connected to the third infrared heating element 600 , and the detection device 400 may be connected to the second driving mechanism 700 .

[0079] The control method disclosed in the embodiment of the present application may further include:

[0080] Step A1: controlling the second driving mechanism 700 to drive the detection device 400 to move, so that the detection device 400 monitors the coating thickness at different positions of the transparent quartz part 101 .

[0081] Step A2 , according to the coating thickness at different positions of the transparent quartz portion 101 , controlling the third infrared heating element 600 to emit third infrared light to a specific position of the transparent quartz portion 101 , so as to heat the specific position of the transparent quartz portion 101 .

[0082] The third infrared heating element 600 may be a laser heating lamp, the wavelength of the third infrared light may be within the second wavelength range, and the transmittance of the transparent quartz portion 101 to the third infrared light is less than 5%.

[0083] It should be noted that the detection device 400 can detect the coating thickness at different positions of the transparent quartz part 101, and record the surface conditions at different positions of the transparent quartz part 101 in real time, and transmit the data to the intelligent recognition control system. The intelligent recognition control system performs big data analysis based on the surface discoloration at different positions of the transparent quartz part 101, thereby determining the specific position of the transparent quartz part 101 that needs to be heated.

[0084] The control method disclosed in the embodiment of the present application comprises a third infrared heating element 600 and a second drive mechanism 700, wherein the third infrared heating element 600 is configured as a laser heating lamp, and the transparent quartz portion 101 can have a transmittance of less than 5% for the third infrared light, thereby achieving good absorption and reflection. Because the laser heating lamp has the characteristics of high brightness, good directionality, and low light dispersion, the second drive mechanism 700 can drive the third infrared heating element 600 to move, so that the third infrared heating element 600 can heat a specific location of the transparent quartz portion 101, thereby improving the heating capacity of the specific location of the transparent quartz portion 101.

[0085] In some embodiments, the heating assembly may further include a fourth infrared heating element and a second driving mechanism 700 . The second driving mechanism 700 may be connected to the fourth infrared heating element, and the detection device 400 may be connected to the second driving mechanism 700 .

[0086] The control method disclosed in the embodiment of the present application may further include:

[0087] Step B1: controlling the second driving mechanism 700 to drive the detection device 400 to move, so that the detection device 400 monitors the coating thickness at different positions of the base 120 .

[0088] Step B2: According to the coating thickness at different positions of the base 120 , the fourth infrared heating element is controlled to emit fourth infrared light toward the base 120 , so that the fourth infrared light passes through the transparent quartz portion 101 and reaches a specific position of the base 120 , thereby heating the specific position of the base 120 .

[0089] The fourth infrared heating element is a laser heating lamp, the wavelength of the fourth infrared light is within the first wavelength range, and the transmittance of the transparent quartz portion 101 to the fourth infrared light is greater than 90%.

[0090] It should be noted that the detection device 400 can detect the coating thickness at different positions of the base 120, and record the surface status at different positions of the base 120 in real time, and transmit the data to the intelligent recognition control system. The intelligent recognition control system performs big data analysis based on the surface color differences at different positions of the base 120, thereby determining the specific positions of the base 120 that need to be heated.

[0091] The control method disclosed in the embodiment of the present application is achieved by setting a fourth infrared heating element and a second driving mechanism 700, and setting the fourth infrared heating element to a laser heating lamp, and the transmittance of the transparent quartz part 101 to the fourth infrared light is greater than 90%. Since the laser heating lamp has the characteristics of high brightness, good directivity, and small light dispersion, the second driving mechanism 700 can drive the fourth infrared heating element to move, so that the fourth infrared heating element can heat a specific position of the base 120, thereby improving the heating capacity of the specific position of the base 120, and further facilitating the adjustment of the temperature uniformity of the base 120.

[0092] The embodiments of the present application are described above in conjunction with the accompanying drawings, but the present application is not limited to the above-mentioned specific implementation methods. The above-mentioned specific implementation methods are merely illustrative and not restrictive. Under the guidance of this application, ordinary technicians in this field can also make many forms without departing from the purpose of this application and the scope of protection of the claims, all of which are within the protection of this application.

Claims

1. A semiconductor process equipment, characterized in that: comprising a reaction chamber and a heating assembly; The reaction chamber comprises a chamber body and a base, wherein the base is arranged in the chamber body, and the chamber body comprises two transparent quartz parts respectively located above and below the base; The heating component is disposed on a side of at least one of the transparent quartz parts facing away from the base; The heating assembly includes a first infrared heating element and a second infrared heating element; The first infrared heating element is used to emit first infrared light in a first wavelength range, so that the first infrared light passes through the transparent quartz portion and reaches the base; The second infrared heating element is used to emit second infrared light in a second wavelength range so that the second infrared light reaches the transparent quartz portion; The transmittance of the transparent quartz part to the first infrared light is greater than 90%, and the transmittance of the transparent quartz part to the second infrared light is less than 5%.

2. The semiconductor process equipment according to claim 1, characterized in that: The first wavelength range is 1 μm-3 μm, and the second wavelength range is 5 μm-20 μm.

3. The semiconductor process equipment according to claim 1, characterized in that: The transparent quartz portion includes a plurality of target areas, and the semiconductor process equipment further includes a detection device and a first driving mechanism, wherein the first driving mechanism is connected to the second infrared heating element; The detection device is used to detect the coating thickness of the multiple target areas; The first driving mechanism is used to drive the second infrared heating element to move, so that the second infrared light emitted by the second infrared heating element is projected onto any one of the multiple target areas.

4. The semiconductor process equipment according to claim 1, characterized in that: The chamber body comprises an upper quartz cover, a lower quartz cover, an annular base and a fixing flange, the edge of the upper quartz cover and the edge of the lower quartz cover are respectively connected to the opposite sides of the annular base through the fixing flange, so that the upper quartz cover, the lower quartz cover and the annular base form an inner cavity of the chamber body, the base is arranged in the inner cavity, the upper quartz cover and the lower quartz cover both include the transparent quartz part, and the second infrared heating element is arranged on the fixing flange.

5. The semiconductor process equipment according to claim 4, characterized in that: The second infrared heating element includes a plurality of first light emitters, and the plurality of first light emitters are arranged around the transparent quartz portion.

6. The semiconductor process equipment according to claim 5, characterized in that: The center of the transparent quartz portion protrudes in a direction away from the base relative to the edge of the transparent quartz portion; The semiconductor process equipment also includes a plurality of first driving mechanisms arranged one-to-one corresponding to the plurality of first light-emitting bodies, and the first driving mechanisms are connected to the corresponding first light-emitting bodies and are used to drive the first light-emitting bodies to rotate so that the second infrared light emitted by the first light-emitting bodies can be projected to any position of the transparent quartz part in the direction from the edge of the transparent quartz part to the center of the transparent quartz part.

7. The semiconductor process equipment according to claim 6, characterized in that: The first driving mechanism includes a first driving body and a cam connected to the first driving body, the second infrared heating element also includes a lampshade, the first light-emitting body is arranged in the lampshade, the lampshade is connected to the cam, and the first driving body is used to drive the cam to rotate, so that the lampshade drives the first light-emitting body to rotate.

8. The semiconductor process equipment according to claim 1, characterized in that: The semiconductor process equipment further includes a filter, which is disposed on the light-emitting side of the second infrared heating element and is used to filter light with a wavelength less than 5 μm in the second infrared light.

9. The semiconductor process equipment according to claim 1, characterized in that: The heating assembly also includes a third infrared heating element and a second driving mechanism, wherein the second driving mechanism is connected to the third infrared heating element and is used to drive the third infrared heating element to move so that the third infrared light emitted by the third infrared heating element is projected to any position of the transparent quartz part, wherein the third infrared heating element is a laser heating lamp, the wavelength of the third infrared light is within the second wavelength range, and the transmittance of the transparent quartz part to the third infrared light is less than 5%.

10. The semiconductor process equipment according to claim 1, characterized in that: The heating assembly also includes a fourth infrared heating element and a second driving mechanism, wherein the second driving mechanism is connected to the fourth infrared heating element and is used to drive the fourth infrared heating element to move so that the fourth infrared light emitted by the fourth infrared heating element passes through the transparent quartz part and is projected to any position of the base, wherein the fourth infrared heating element is a laser heating lamp, the wavelength of the fourth infrared light is within the first wavelength range, and the transmittance of the transparent quartz part to the fourth infrared light is greater than 90%.

11. The semiconductor process equipment according to claim 9 or 10, characterized in that: The second driving mechanism includes a driving base and a spherical rotating part, the spherical rotating part is movably arranged on the driving base and can rotate in any direction relative to the driving base, and the third infrared heating element or the fourth infrared heating element is arranged on the spherical rotating part.

12. A control method for semiconductor process equipment, characterized in that: The semiconductor process equipment is the semiconductor process equipment according to any one of claims 1 to 11, and the semiconductor process equipment further comprises a detection device and a first driving mechanism, wherein the first driving mechanism is connected to the second infrared heating element; The control method comprises: controlling the first infrared heating element to emit first infrared light in a first wavelength range so that the first infrared light passes through the transparent quartz portion and reaches the base; Controlling the detection device to detect the coating thickness of the plurality of target areas; Determining the target area that needs to be heated among the multiple target areas according to the coating thickness; The first driving mechanism is controlled to drive the second infrared heating element to move, so that the second infrared light emitted by the second infrared heating element is projected onto the target area that needs to be heated.

13. The control method of semiconductor process equipment according to claim 12, characterized in that: The heating assembly further comprises a third infrared heating element and a second driving mechanism, the second driving mechanism is connected to the third infrared heating element, and the detection device is connected to the second driving mechanism; The control method further comprises: controlling the second driving mechanism to drive the detection device to move so that the detection device monitors the coating thickness at different positions of the transparent quartz portion; According to the coating thickness at different positions of the transparent quartz portion, controlling the third infrared heating element to emit third infrared light to a specific position of the transparent quartz portion, so as to heat the specific position of the transparent quartz portion; Wherein, the third infrared heating element is a laser heating lamp, the wavelength of the third infrared light is within the second wavelength range, and the transmittance of the transparent quartz part to the third infrared light is less than 5%.

14. The control method of semiconductor process equipment according to claim 12, characterized in that: The heating assembly further comprises a fourth infrared heating element and a second driving mechanism, the second driving mechanism is connected to the fourth infrared heating element, and the detection device is connected to the second driving mechanism; The control method further comprises: Controlling the second driving mechanism to drive the detection device to move so that the detection device monitors the coating thickness at different positions of the base; According to the coating thickness at different positions of the base, controlling the fourth infrared heating element to emit fourth infrared light to the base, so that the fourth infrared light passes through the transparent quartz portion to reach a specific position of the base, so as to heat the specific position of the base; Wherein, the fourth infrared heating element is a laser heating lamp, the wavelength of the fourth infrared light is within the first wavelength range, and the transmittance of the transparent quartz part to the fourth infrared light is greater than 90%.

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