Power semiconductor module, half-bridge power module, and vehicle

Abstract

The present application relates to the technical field of circuits, and particularly relates to a power semiconductor module, a half-bridge power module, and a vehicle. The power semiconductor module comprises: a triode and at least one diode, wherein a drain electrode of the triode is connected to a negative electrode of the diode, a source electrode of the triode is connected to a positive electrode of the diode, and the area occupied by the at least one diode is larger than the area occupied by the triode. The present application which uses the solution can reduce the loss of a power semiconductor module, and improves the usage efficiency of the power semiconductor module.

Description

Power semiconductor module, half-bridge power module and vehicle

[0001] This application claims priority to the Chinese patent application filed with the China Patent Office on December 8, 2023, with application number 202323357951.8 and invention name “Power Semiconductor Module and Half-Bridge Power Module”, the entire contents of which are incorporated by reference into this application. Technical Field

[0002] The present application relates to the field of circuit technology, and in particular to a power semiconductor module, a half-bridge power module, and a vehicle. Background Art

[0003] Power semiconductors are semiconductor products developed based on power electronics technology and developed in conjunction with the use of electricity. They are the core components of various electronic devices or the main circuits of power systems, and can be directly used for the processing and conversion of electrical energy. However, in related technologies, power semiconductor modules are designed for driving functions. The area of ​​the transistors installed within them is larger than that of the diodes connected in parallel, resulting in a high forward voltage drop across the diodes. During the use of power semiconductor modules, the time it takes for current to flow through the diodes is much longer than the time it takes through the transistors. This results in high losses and low efficiency. Summary of the Invention

[0004] The present application provides a power semiconductor module, a half-bridge power module and a vehicle, the main purpose of which is to reduce the loss of the power semiconductor module and improve the utilization efficiency of the power semiconductor module.

[0005] According to one aspect of the present application, a power semiconductor module is provided, comprising: a transistor and at least one diode; wherein,

[0006] The drain of the transistor is connected to the cathode of the diode, and the source of the transistor is connected to the anode of the diode;

[0007] The area occupied by at least one diode is larger than the area occupied by the transistor.

[0008] Optionally, in one embodiment of the present application, there are multiple diodes.

[0009] Optionally, in one embodiment of the present application, multiple diodes are placed around the transistor, wherein a diode is set in any direction of the transistor. If a diode is set in each direction of the transistor, a diode is set in the direction away from the transistor of any diode set in any direction.

[0010] Optionally, in one embodiment of the present application, the diode is connected in parallel with the transistor via at least one bonding wire.

[0011] Optionally, in one embodiment of the present application, the power semiconductor module further includes a printed circuit board; wherein,

[0012] At least one diode and a transistor are arranged on a copper substrate of the printed circuit board.

[0013] Optionally, in one embodiment of the present application, the printed circuit board further includes a gate region, a source region, and a drain region; wherein,

[0014] The gate region, source region and drain region are all arranged on a copper substrate;

[0015] The drain of the transistor and the cathode of the diode are connected to the drain region through the copper substrate;

[0016] The source of the transistor and the anode of the diode are connected to the source region through aluminum wire;

[0017] The gate of the transistor is connected to the gate region through an aluminum wire.

[0018] Optionally, in one embodiment of the present application, the power semiconductor module further includes a gate pin, a source pin, and a drain pin; wherein,

[0019] The gate pin is arranged in the gate region, the source pin is arranged in the source region, and the drain pin is arranged in the drain region.

[0020] According to another aspect of the present application, a half-bridge power module is provided, comprising: a first power semiconductor module and a second power semiconductor module, wherein the first power semiconductor module and the second power semiconductor module both adopt the power semiconductor module described in any one of the aforementioned aspects; wherein,

[0021] The first power semiconductor module and the second power semiconductor module are connected in series.

[0022] Optionally, in one embodiment of the present application, the source of the transistor and the anode of the diode in the first power semiconductor module are connected to the drain region of the second power semiconductor module through bonding wires.

[0023] Optionally, in one embodiment of the present application, the half-bridge power module further includes a positive terminal, a negative terminal and a phase power terminal; wherein,

[0024] The positive terminal is connected to the drain region of the first power semiconductor module;

[0025] The phase power terminal is connected to the drain region of the second power semiconductor module;

[0026] The negative electrode terminal is connected to the source region of the second power semiconductor module.

[0027] Optionally, in one embodiment of the present application, the half-bridge power module further includes a transfer copper bus and a capacitor; wherein,

[0028] The first power semiconductor module and the second power semiconductor module are located in a first plane, the transfer copper bus is located in a second plane, and the first plane is parallel to the second plane;

[0029] One end of the transfer copper bus is connected to the negative terminal, the other end of the transfer copper bus is connected to the negative pole of the capacitor, and the other end of the transfer copper bus is close to the positive terminal, and the positive terminal is connected to the positive pole of the capacitor; or, one end of the transfer copper bus is connected to the positive terminal, the other end of the transfer copper bus is connected to the positive pole of the capacitor, and the other end of the transfer copper bus is close to the negative terminal, and the negative terminal is connected to the negative pole of the capacitor.

[0030] In summary, the power semiconductor module provided by the present application has a lower forward voltage drop of the diode and a lower loss caused by the current passing through the diode, as the time for the current to pass through the diode remains unchanged during the use of the power semiconductor module. Therefore, by setting the area occupied by at least one diode to be larger than the area occupied by the transistor to reduce the forward voltage drop of the diode, the loss of the power semiconductor module can be reduced, the working efficiency of the power semiconductor module can be improved, and the power generation efficiency can be increased.

[0031] According to another aspect of the present application, a motor controller is provided, comprising a half-bridge power module as described in any one of the above items.

[0032] According to another aspect of the present application, an electric drive system is provided, comprising the motor controller as described above.

[0033] According to another aspect of the present application, a vehicle is provided, comprising the aforementioned electric drive system.

[0034] Additional aspects and advantages of the present application will be given in part in the description below, and in part will become apparent from the description below, or will be learned through practice of the present application.

[0035] The above description is only an overview of the technical solution of the present application. In order to more clearly understand the technical means of the present application, it can be implemented in accordance with the contents of the specification. In order to make the above and other purposes, features and advantages of the present application more obvious and easy to understand, the specific implementation methods of the present application are listed below. BRIEF DESCRIPTION OF THE DRAWINGS

[0036] In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the following briefly introduces the drawings required for the embodiments or the description of the prior art. Obviously, the drawings described below are some embodiments of the present application. For those skilled in the art, other drawings can be obtained based on these drawings without inventive work. Among them:

[0037] FIG1 is a circuit diagram of a power semiconductor module provided in an embodiment of the present application;

[0038] FIG2 is a top view of a half-bridge power module provided in an embodiment of the present application;

[0039] FIG3 is a circuit diagram of a half-bridge power module provided in an embodiment of the present application;

[0040] FIG4 is a side view of a half-bridge power module provided in an embodiment of the present application. Specific embodiments

[0041] To make the purpose, technical solutions, and advantages of the embodiments of this application more clear, the technical solutions in the embodiments of this application will be clearly and completely described below in conjunction with the drawings in the embodiments of this application. Obviously, the described embodiments are part of the embodiments of this application, not all of the embodiments. Based on the embodiments in this application, all other embodiments obtained by ordinary technicians in this field without making creative efforts are within the scope of protection of this application.

[0042] The embodiments of the present application are described in detail below. Examples of the embodiments are shown in the accompanying drawings, wherein the same or similar reference numerals throughout represent the same or similar elements or elements having the same or similar functions. The embodiments described below with reference to the accompanying drawings are exemplary and are intended only to explain the present application and are not to be construed as limiting the present application. On the contrary, the embodiments of the present application include all variations, modifications, and equivalents that fall within the spirit and scope of the appended claims.

[0043] The present application is described in detail below with reference to specific embodiments.

[0044] Figure 1 is a circuit diagram of a power semiconductor module provided by an embodiment of the present application. As shown in Figure 1 , the power semiconductor module includes a transistor Q1 and at least one diode (D1 to Dn, where n is a positive integer). The drain of transistor Q1 is connected to the cathode of the diode, and the source of transistor Q1 is connected to the anode of the diode. The area occupied by at least one diode is larger than the area occupied by transistor Q1.

[0045] According to some embodiments, the transistor Q1 includes but is not limited to a bipolar junction transistor (BJT), a gate turn-off thyristor (GTO), an insulated gate bipolar transistor (IGBT), an integrated gate commutated thyristor (IGCT), a metal oxide semiconductor field effect transistor (MOSFET, MOS), a gallium nitride field effect transistor (GaNFET), etc.

[0046] It should be noted that some extended-range drive systems are equipped with a generator and a controller with power generation capabilities. The power generation controller has high requirements for switching losses and conduction voltage drop. During the use of a power semiconductor module, if the time for current to pass through the diode remains unchanged, the lower the conduction voltage drop of the diode, the lower the loss caused by the current passing through the diode, and the lower the loss of the power semiconductor module. In related art, the area of ​​the transistors installed within the power semiconductor module is larger than the area of ​​the diodes connected in parallel, resulting in a higher conduction voltage drop of the diodes. However, the embodiments of the present application reduce the conduction voltage drop of the diodes by setting the area occupied by at least one diode larger than the area occupied by transistor Q1, thereby reducing the loss of the power semiconductor module. Furthermore, the time for current to pass through the diodes is much longer than the time it passes through transistor Q1, which can significantly reduce the loss of the power semiconductor module, improve its utilization efficiency, and enable the power semiconductor module to meet the performance requirements of the drive system.

[0047] In addition, it should be noted that for some controllers in the related art that do not have a power generation function, there is no need to improve their power semiconductor modules.

[0048] In the process of setting at least one diode to have an area larger than that of the transistor Q1, the area occupied by the transistor Q1 can be first determined. If a diode with an area larger than that of the transistor Q1 exists, the diode is connected in parallel with the transistor Q1. Conversely, if no diode with an area larger than that of the transistor Q1 exists, the number of diodes required to be connected in parallel with the transistor Q1 can be determined based on the areas occupied by diodes of different models. It is not necessary to use a fixed diode model; multiple diode models can be combined and connected in parallel with the transistor Q1, so that the area occupied by all diodes is larger than that of the transistor Q1.

[0049] Secondly, based on the fact that the area occupied by all diodes is larger than that occupied by transistor Q1, other diodes can be further connected in parallel with transistor Q1 to further reduce the diode's forward voltage drop. The area occupied by these other diodes is not limited, but the larger the total area occupied by all diodes, the lower the diode forward voltage drop and the higher the operating efficiency of the power semiconductor module. The specific diode model and quantity can be determined based on the actual application scenario.

[0050] In addition, the larger the area occupied by a transistor, the higher its price, and the greater the switching loss and power. Depending on the actual application scenario, while meeting the power requirements of the power semiconductor module, transistors with a smaller area can be used to reduce the overall cost and loss of the power semiconductor module.

[0051] Optionally, in one embodiment of the present application, multiple diodes are placed around the transistor Q1, wherein a diode is set in any direction of the transistor Q1. If a diode is set in each direction of the transistor Q1, a diode is set in the direction away from the transistor Q1 of any diode set in any direction.

[0052] According to some embodiments, the transistor Q1 is placed in the middle position, and a layout in which multiple diodes are placed around the transistor Q1 can improve the current sharing effect of the diodes, further reduce the loss of the diodes, reduce the loss of the entire power semiconductor module, improve the working efficiency of the power semiconductor module, and increase the power generation efficiency.

[0053] Taking a scenario as an example, Figure 2 is a top view of a half-bridge power module provided in an embodiment of the present application. As shown in Figure 2, the half-bridge power module includes two power semiconductor modules. The power semiconductor module of the upper half bridge is a first power semiconductor module, and the power semiconductor module of the lower half bridge is a second power semiconductor module. The first power semiconductor module and the second power semiconductor module both use a single IGBT chip in parallel with five diode (FRD) chips. Among them, an FRD chip is placed to the left, right, bottom, lower left, and lower right of the IGBT chip.

[0054] Optionally, in one embodiment of the present application, the diode is connected in parallel with the transistor Q1 through at least one bonding wire.

[0055] Taking a scenario as an example, as shown in FIG2 , the number of bonding lines used can be four or five.

[0056] It should be noted that the more bonding lines there are, the stronger the current sharing effect of the diode will be.

[0057] Optionally, in one embodiment of the present application, the power semiconductor module further includes a printed circuit board; wherein the plurality of diodes and the transistor Q1 are arranged on a copper substrate of the printed circuit board.

[0058] According to some embodiments, a printed circuit board, also known as a printed circuit board, a printed circuit board, or simply a printed board, is a finished board made of an insulating substrate and a conductor, and is designed and manufactured according to a pre-designed circuit schematic diagram to form a conductive pattern of printed circuits, printed components, or a combination of the two. Its main function is to use the board base insulating material to isolate the copper foil conductive layer on the surface, to achieve interconnection and relay transmission between electronic components, and to allow the current to complete amplification, attenuation, modulation, decoding, encoding, and other functions in various electronic components along the preset line, thereby achieving interconnection and relay transmission between electronic components.

[0059] According to some embodiments, the printed circuit board further includes a gate region, a source region, and a drain region; wherein,

[0060] The gate region, source region and drain region are all arranged on a copper substrate;

[0061] The drain of transistor Q1 and the cathode of the diode are connected to the drain region through the copper substrate;

[0062] The source of transistor Q1 and the anode of the diode are connected to the source region through aluminum wire;

[0063] The gate of the transistor Q1 is connected to the gate region through an aluminum wire.

[0064] According to some embodiments, the gate region, the source region, and the drain region can all be directly soldered onto the copper substrate. The area of ​​the drain region can be larger than the area of ​​the gate region and the area of ​​the source region.

[0065] In some embodiments, the drain of the transistor Q1 and the cathode of the diode are connected to the drain region via a copper substrate, the source of the transistor Q1 and the anode of the diode are connected to the source region via an aluminum wire, and the gate of the transistor Q1 is connected to the gate region via an aluminum wire. Therefore, it is not necessary to connect the source of the transistor Q1 and the anode of the diode to the source region, and the gate of the transistor Q1 to the gate region, via circuits printed on the printed circuit board. This can reduce the area of ​​the printed circuit board required for the multiple diodes and the transistor Q1.

[0066] According to some embodiments, the power semiconductor module further comprises a gate pin, a source pin and a drain pin; wherein the gate pin is arranged in the gate region, the source pin is arranged in the source region, and the drain pin is arranged in the drain region.

[0067] In some embodiments, by providing a gate pin, a source pin, and a drain pin, it is possible to facilitate connection between the power semiconductor module and an external device.

[0068] Taking a scenario as an example, as shown in Figure 2, the gate pin is connected to the gate of the IGBT chip through an aluminum wire, the source pin is connected to the positive electrode of the FRD chip to the left of the IGBT chip, the source of the IGBT chip is connected to the positive electrode of the FRD chip through four bonding wires, and the drain pin is connected to the drain of the IGBT chip and the negative electrode of the FRD chip through a copper substrate.

[0069] In summary, the power semiconductor module provided in the embodiment of the present application has a lower forward voltage drop of the diode and a lower loss caused by the current passing through the diode, as the time for the current to pass through the diode remains unchanged during the use of the power semiconductor module. Therefore, by setting the area occupied by at least one diode to be larger than the area occupied by the transistor to reduce the forward voltage drop of the diode, the loss of the power semiconductor module can be reduced, the working efficiency of the power semiconductor module can be improved, and the power generation efficiency can be increased.

[0070] According to an embodiment of the present application, a half-bridge power module is also provided. Figure 3 is a circuit diagram of a half-bridge power module provided in an embodiment of the present application. As shown in Figure 3, the half-bridge power module includes: a first power semiconductor module and a second power semiconductor module, wherein the first power semiconductor module and the second power semiconductor module both utilize the power semiconductor modules described in any of the aforementioned embodiments; wherein the first power semiconductor module and the second power semiconductor module are connected in series.

[0071] According to some embodiments, the first power semiconductor module includes a transistor Q11 and diodes D11 to D1n connected in parallel with Q11. The second power semiconductor module includes a transistor Q21 and diodes D21 to D2n connected in parallel with Q21.

[0072] In some embodiments, the source of the first power semiconductor module and the drain of the second power semiconductor module are connected.

[0073] Optionally, in one embodiment of the present application, as shown in FIG2 , the source of the transistor and the anode of the diode in the first power semiconductor module are connected to the drain region of the second power semiconductor module via bonding wires. This improves the connection between the first power semiconductor module and the second power semiconductor module.

[0074] Optionally, in one embodiment of the present application, as shown in FIG2 and FIG3 , the half-bridge power module further includes a positive terminal T+, a negative terminal T− and a phase power terminal; wherein,

[0075] The positive terminal T+ is connected to the drain region of the first power semiconductor module;

[0076] The phase power terminal is connected to the drain region of the second power semiconductor module;

[0077] The negative terminal T− is connected to the source region of the second power semiconductor module.

[0078] In some embodiments, by setting a positive terminal T+, a negative terminal T- and a phase power terminal, an external device can be connected to the half-bridge power module through the positive terminal T+, the negative terminal T- and the phase power terminal to drive the half-bridge power module.

[0079] According to some embodiments, FIG4 is a side view of a half-bridge power module provided in an embodiment of the present application. As shown in FIG2 and FIG4, the half-bridge power module further includes a copper transfer busbar and a capacitor C1; wherein the first power semiconductor module and the second power semiconductor module are located in a first plane, and the copper transfer busbar is located in a second plane, with the first plane being parallel to the second plane; one end of the copper transfer busbar is connected to the negative terminal T-, the other end of the copper transfer busbar is connected to the negative electrode of the capacitor C1, and the other end of the copper transfer busbar is close to the positive terminal T+, which is connected to the positive electrode of the capacitor C1.

[0080] According to some embodiments, one end of the transfer copper busbar may also be connected to the positive terminal T+. In this case, the other end of the transfer copper busbar is connected to the positive electrode of the capacitor C1, and the other end of the transfer copper busbar is close to the negative terminal T-, which is connected to the negative electrode of the capacitor C1.

[0081] In some embodiments, the transfer copper busbar may be connected to the negative terminal T− or the positive terminal T+ by a laser welding process.

[0082] It should be noted that, in the related art, the positive terminal T+ and the negative terminal T- of the half-bridge power module are placed on the same side, and the phase power terminal is placed on the other side, so that the parasitic inductance between the half-bridge power module and the copper bus is about 12nH. In the embodiment of the present application, by placing the phase power terminal and the negative terminal T- on one side of the half-bridge power module, and the positive terminal T+ on the other side of the half-bridge power module, the positive terminal T+ and the negative terminal T- are transferred to the same side and connected to the capacitor C1 through a transfer copper bus parallel to the half-bridge power module. Therefore, the design of parallel stacking of the commutation circuit by laser welding can reduce the parasitic inductance of the half-bridge power module to 5nH; by reducing the parasitic inductance, the switching speed of the half-bridge power module can be further improved, the switching loss of the half-bridge power module can be reduced, and the power generation efficiency of the half-bridge power module can be improved.

[0083] In summary, the half-bridge power module provided in the embodiment of the present application has a lower forward voltage drop of the diode and a lower loss caused by the current passing through the diode when the time for the current to pass through the diode remains unchanged during the use of the power semiconductor module. Therefore, by setting the area occupied by at least one diode to be larger than the area occupied by the transistor to reduce the forward voltage drop of the diode, the loss of the power semiconductor module can be reduced, the loss of the entire power semiconductor module can be reduced, the working efficiency of the power semiconductor module can be improved, and the power generation efficiency can be increased.

[0084] According to an embodiment of the present application, the present application also provides a motor controller. The motor controller is an electronic device used to control the operation of a motor. The motor controller controls the motor's speed, torque, and other parameters by receiving input signals and processing these signals. The motor controller can be used not only to control the operation of generators in electric vehicles, but also in various fields such as industrial automation equipment, aerospace equipment, and household electrical equipment to maintain the normal operation of each device. The motor controller includes a half-bridge power module as described in any of the aforementioned embodiments, which helps reduce the losses of the motor controller and improve the operating efficiency of the motor controller.

[0085] According to embodiments of the present application, an electric drive system is also provided, which can be used in an electric vehicle to convert the electrical energy generated by the battery pack into kinetic energy to propel the vehicle forward. The electric drive system includes a motor controller as described in the aforementioned embodiments, which helps reduce losses in the electric drive system and improve operating efficiency.

[0086] According to an embodiment of the present application, the present application also provides a vehicle, which can be a pure electric vehicle or a hybrid vehicle. The vehicle includes an electric drive system as described in the above embodiment, which helps to improve the vehicle's endurance.

[0087] References herein to "one embodiment," "an embodiment," or "one or more embodiments" mean that a particular feature, structure, or characteristic described in connection with the embodiment is included in at least one embodiment of the present application. Furthermore, please note that instances of the phrase "in one embodiment" do not necessarily all refer to the same embodiment.

[0088] In the description provided herein, a large number of specific details are described. However, it is understood that the embodiments of the present application can be practiced without these specific details. In some instances, well-known methods, structures, and techniques are not shown in detail so as not to obscure the understanding of this description.

[0089] In the claims, any reference signs placed between parentheses should not be construed as limiting the claims. Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly specifying the number of the technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one of such features. In the description of this application, "plurality" means at least two, such as two, three, etc., unless otherwise specifically defined.

[0090] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present application, rather than to limit them. Although the present application has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the aforementioned embodiments, or make equivalent replacements for some of the technical features therein. However, these modifications or replacements do not deviate the essence of the corresponding technical solutions from the spirit and scope of the technical solutions of the embodiments of the present application.

Claims

1. A power semiconductor module, characterized in that: include: A transistor and at least one diode; wherein, The drain of the transistor is connected to the cathode of the diode, and the source of the transistor is connected to the anode of the diode; The area occupied by the at least one diode is larger than the area occupied by the transistor.

2. The power semiconductor module according to claim 1, characterized in that: The number of the diodes is plural.

3. The power semiconductor module according to claim 2, characterized in that: The multiple diodes are placed around the transistor, wherein a diode is set in any direction of the transistor. If a diode is set in each direction of the transistor, a diode is set in the direction away from the transistor of any diode set in any direction.

4. The power semiconductor module according to claim 1, characterized in that: The power semiconductor module also includes a printed circuit board; wherein, The at least one diode and the transistor are arranged on a copper substrate of the printed circuit board.

5. The power semiconductor module according to claim 4, characterized in that: The printed circuit board also includes a gate region, a source region and a drain region; wherein, The gate region, the source region and the drain region are all arranged on the copper substrate; The drain of the triode and the cathode of the diode are connected to the drain region through the copper substrate; The source electrode of the transistor and the anode electrode of the diode are connected to the source electrode region through an aluminum wire; The gate of the transistor is connected to the gate region through an aluminum wire.

6. The power semiconductor module according to claim 5, characterized in that: The power semiconductor module further includes a gate pin, a source pin and a drain pin; wherein, The gate pin is disposed in the gate region, the source pin is disposed in the source region, and the drain pin is disposed in the drain region.

7. A half-bridge power module, characterized in that: include: A first power semiconductor module and a second power semiconductor module, wherein the first power semiconductor module and the second power semiconductor module both adopt the power semiconductor module according to any one of claims 1 to 6; wherein The first power semiconductor module and the second power semiconductor module are connected in series.

8. The half-bridge power module according to claim 7, characterized in that: The source of the transistor and the anode of the diode in the first power semiconductor module are connected to the drain region of the second power semiconductor module through bonding wires.

9. The half-bridge power module according to claim 8, characterized in that: The half-bridge power module also includes a positive terminal, a negative terminal and a phase power terminal; wherein, The positive terminal is connected to the drain region of the first power semiconductor module; The phase power terminal is connected to the drain region of the second power semiconductor module; The negative electrode terminal is connected to the source region of the second power semiconductor module.

10. The half-bridge power module according to claim 9, characterized in that: The half-bridge power module also includes a transfer copper bus and a capacitor; wherein, The first power semiconductor module and the second power semiconductor module are in a first plane, the transfer copper bus is in a second plane, and the first plane is parallel to the second plane; One end of the transfer copper bar is connected to the negative terminal, the other end of the transfer copper bar is connected to the negative electrode of the capacitor, and the other end of the transfer copper bar is close to the positive terminal, and the positive terminal is connected to the positive electrode of the capacitor; or, one end of the transfer copper bar is connected to the positive terminal, the other end of the transfer copper bar is connected to the positive electrode of the capacitor, and the other end of the transfer copper bar is close to the negative terminal, and the negative terminal is connected to the negative electrode of the capacitor.

11. A motor controller, characterized in that: It comprises a half-bridge power module as claimed in any one of claims 1 to 10.

12. An electric drive system, characterized in that: Comprising the motor controller as claimed in claim 11.

13. A vehicle, characterized in that: Comprising the electric drive system as claimed in claim 12.

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