Light-emitting assembly and display substrate

Abstract

Disclosed are a light-emitting assembly and a display substrate. The light-emitting assembly comprises a drive substrate and a light-emitting unit, wherein the light-emitting unit is provided with a plurality of electrodes, and the drive substrate is provided with a plurality of first conductive pads. The light-emitting assembly further comprises a solder portion and a protective portion, each electrode being electrically connected to a corresponding first conductive pad by means of the solder portion. The protective portion is in contact with and surrounds the solder portion, and the protective portion is in contact with at least one of the electrodes and the first conductive pads.

Description

Light-emitting components and display substrates Technical Field

[0001] The present disclosure relates to the field of display technology, and in particular to a light-emitting component and a display substrate. Background Art

[0002] With the development of display technology, LED (mini Light-Emitting Diode) display substrates are becoming the most advantageous next-generation display media due to their advantages such as pure color, wide dynamic range, high brightness, high definition, low operating voltage, low power consumption, long life, impact resistance, wide viewing angle, and stable and reliable operation. LED display substrates include multiple LED light-emitting chips arranged in an array. The research and development of LED light-emitting chips, especially mini-LED and micro-LED light-emitting chips, has become a major issue in the display field.

[0003] Summary of the Invention

[0004] The present disclosure provides a light-emitting component and a display substrate.

[0005] In order to achieve the above-mentioned object, the present disclosure provides a light-emitting assembly, comprising: a driving substrate and a light-emitting unit;

[0006] The light emitting unit has a plurality of electrodes, and the driving substrate has a plurality of first conductive pads;

[0007] The light emitting component further includes a solder portion and a protection portion, and the electrode and the corresponding first conductive pad are electrically connected via the solder portion;

[0008] The protection portion is in contact with and surrounds the solder portion, and is in contact with at least one of the electrode and the first conductive pad.

[0009] In some embodiments, the material of the solder portion includes tin, and the material of the protection portion includes epoxy resin.

[0010] In some embodiments, a first enclosed space is formed between the protection portion, the electrode, and the first conductive pad corresponding to the electrode, and the solder portion is located inside the first enclosed space.

[0011] In some embodiments, the light emitting unit includes a first surface facing the driving substrate, the driving substrate includes a second surface facing the light emitting unit, and the protection portion, the first surface, and the second surface together constitute a second enclosed space enclosing the solder portion.

[0012] In some embodiments, the protection portion is disposed around an outer contour of a surface of the electrode facing the first conducting pad, and / or the protection portion is disposed around an outer contour of a surface of the first conducting pad facing the electrode.

[0013] In some embodiments, the protection portion and the solder portion jointly wrap the first conductive pad so that the first conductive pad is in a sealed state, and / or,

[0014] The protection portion and the solder portion together wrap the electrode, so that the electrode is in a sealed state.

[0015] In some embodiments, the light emitting unit is a light emitting diode, and the plurality of electrodes include a first electrode and a second electrode;

[0016] The first electrode is the anode of the light-emitting diode, and the second electrode is the cathode of the light-emitting diode.

[0017] In some embodiments, the plurality of electrodes includes a third electrode and a fourth electrode;

[0018] The light emitting unit comprises a first semiconductor layer, a light emitting layer and a second semiconductor layer which are stacked, wherein the second semiconductor layer is located on the light emitting side of the light emitting layer;

[0019] The first semiconductor layer includes a plurality of first semiconductor portions spaced apart from each other, the light-emitting layer includes a plurality of light-emitting portions spaced apart from each other, and the second semiconductor layer includes a plurality of second semiconductor portions spaced apart from each other; the light-emitting unit includes a plurality of sub-light-emitting unit portions, and one of the first semiconductor portion and one of the second semiconductor portions are respectively disposed on both sides of each light-emitting portion to constitute one sub-light-emitting unit portion;

[0020] wherein the third electrode is electrically connected to one of the plurality of first semiconductor portions, and the fourth electrode is electrically connected to one of the plurality of second semiconductor portions;

[0021] The light emitting unit further includes one or more connecting electrodes, a first end of the connecting electrode being electrically connected to the first semiconductor portion of one of the sub-light emitting unit portions, and a second end of the connecting electrode being electrically connected to the second semiconductor portion of another sub-light emitting unit portion, so that the multiple sub-light emitting unit portions are connected in series.

[0022] In some embodiments, the light-emitting component further includes a passivation layer, the passivation layer is located on a side of the plurality of sub-light-emitting units facing the driving substrate, and the third electrode and the fourth electrode are both located on a side of the passivation layer facing the driving substrate.

[0023] The third electrode is electrically connected to one of the first semiconductor portions through a first via hole penetrating the passivation layer, and the fourth electrode is electrically connected to one of the second semiconductor portions through a second via hole penetrating the passivation layer.

[0024] In some embodiments, the passivation layer includes a first sub-passivation layer and a second sub-passivation layer arranged in sequence along a direction away from the driving substrate, the connecting electrode is located between the first sub-passivation layer and the second sub-passivation layer, the first end of the connecting electrode is electrically connected to the first semiconductor portion of one of the sub-light-emitting unit portions through a third via hole penetrating the second sub-passivation layer, and the second end of the connecting electrode is electrically connected to the second semiconductor portion of another sub-light-emitting unit portion through a fourth via hole penetrating the second sub-passivation layer.

[0025] In some embodiments, the protection portion contacts the passivation layer.

[0026] In some embodiments, the first semiconductor layer is located on a side of the light-emitting layer close to the driving substrate, the first semiconductor layer further includes a first redundant portion spaced apart from the first semiconductor portion, and the light-emitting layer further includes a second redundant portion spaced apart from the light-emitting portion;

[0027] The first redundant portion has a fifth via hole, and the second redundant portion has a sixth via hole, the fifth via hole and the sixth via hole both surround the second via hole, and the passivation layer is filled between a sidewall of the fifth via hole and a sidewall of the second via hole, and between a sidewall of the sixth via hole and a sidewall of the second via hole;

[0028] The orthographic projection of the fourth electrode on the driving substrate overlaps with the orthographic projections of the first redundant portion and the second redundant portion on the driving substrate.

[0029] In some embodiments, the first semiconductor layer is located on a side of the light-emitting layer close to the driving substrate, the first semiconductor layer further includes a third redundant portion spaced apart from the first semiconductor portion, and the light-emitting layer further includes a fourth redundant portion spaced apart from the light-emitting portion;

[0030] The orthographic projection of the third electrode on the driving substrate overlaps with the orthographic projections of the third redundant portion and the fourth redundant portion on the driving substrate.

[0031] In some embodiments, each solder portion connected to the electrode is surrounded by the protective portion, and the protective portions corresponding to different solder portions are arranged at intervals.

[0032] In some embodiments, the number of the light-emitting units is multiple, and the light-emitting component further includes: a color conversion unit disposed on the light-emitting side of the multiple light-emitting units, and a first substrate located on a side of the color conversion unit away from the multiple light-emitting units;

[0033] The color conversion unit includes:

[0034] A defining dam layer, wherein the defining dam layer has a plurality of opening areas; the opening areas correspond one to one with the light emitting units;

[0035] a plurality of optically functional portions, each of which is located inside the opening area and corresponds to the opening area in a one-to-one manner, and at least some of the optically functional portions are used to convert the color of light entering the optically functional portion;

[0036] A first encapsulation layer is located on a side of the definition dam layer facing away from the first substrate.

[0037] In some embodiments, the color conversion unit further comprises:

[0038] a light shielding layer located between the first substrate and the defining dam layer, the light shielding layer comprising a plurality of light through holes, the plurality of opening areas being arranged in a one-to-one correspondence with the plurality of light through holes, and an orthographic projection of the light through holes on the first substrate overlapping with an orthographic projection of the opening areas on the first substrate;

[0039] a filter unit located between the first substrate and the optical functional portion, wherein an orthographic projection of the filter unit on the first substrate overlaps with an orthographic projection of a corresponding light-through hole on the first substrate;

[0040] The filter units are arranged in a one-to-one correspondence with the optical functional parts, and the orthographic projections of the filter units on the first substrate overlap with the orthographic projections of the corresponding optical functional parts on the first substrate.

[0041] In some embodiments, the light emitted by the light emitting unit is blue light or ultraviolet light;

[0042] The optical functional part includes: a first functional part for converting the light emitted by the light emitting unit into red light; a second functional part for converting the light emitted by the light emitting unit into green light; and a third functional part for converting the light emitted by the light emitting unit into blue light or maintaining the blue light state;

[0043] The plurality of filter units are arranged in a one-to-one correspondence with the plurality of light holes;

[0044] The multiple filter units include: a first filter unit arranged corresponding to the first functional part, the first filter unit is a red color block or a red-green-transparent and blue-reflecting filter film; a second filter unit arranged corresponding to the second functional part, the second filter unit is a green color block or a red-green-transparent and blue-reflecting filter film; a third filter unit arranged corresponding to the third functional part, the third filter unit is a blue color block or a transparent layer.

[0045] In some embodiments, the driving substrate includes a base and a first driving circuit layer located on the base, and the first driving circuit layer is electrically connected to the first conducting pad;

[0046] The driving substrate further includes a fifth electrode. At least a portion of the fifth electrode is located on a side of the substrate away from the light-emitting unit. The fifth electrode is electrically connected to the first driving circuit layer via a conductive structure penetrating the substrate.

[0047] In some embodiments, the light-emitting component is a display substrate, and the light-emitting unit array is arranged on the driving substrate;

[0048] The driving substrate has a second driving circuit layer, and the second driving circuit layer is electrically connected to the first conducting pad and is used to provide a first driving signal to the first driving circuit layer.

[0049] In some embodiments, the light emitting assembly further comprises:

[0050] A color conversion unit provided on the light-emitting side of the light-emitting unit;

[0051] a buffer layer, the buffer layer being located between the light-emitting unit and the color conversion unit;

[0052] A bonding adhesive layer, at least a portion of which is located between the buffer layer and the color conversion unit.

[0053] In some embodiments, the light emitting assembly further includes a light-shielding wall, wherein the light-shielding wall surrounds each light emitting unit in the light emitting assembly;

[0054] The light emitting unit comprises a first semiconductor layer, a light emitting layer and a second semiconductor layer which are stacked, wherein the second semiconductor layer is located on the light emitting side of the light emitting layer;

[0055] The light-emitting layer has a first surface facing the driving substrate and a second surface away from the driving substrate, the light-shielding wall is close to the third surface of the driving substrate and away from the fourth surface of the driving substrate, the distance from the third surface to the base of the driving substrate is less than or equal to the distance from the first surface to the base; the distance from the fourth substrate to the base is greater than or equal to the distance from the second surface to the base.

[0056] In some embodiments, the light emitting assembly further comprises: a color conversion unit disposed on a light emitting side of the light emitting unit;

[0057] The light shielding wall is arranged on a surface of the color conversion unit facing the driving substrate.

[0058] In some embodiments, a third enclosed space for accommodating the light-emitting unit is formed between the light-shielding wall, the color conversion unit, and the driving substrate.

[0059] In some embodiments, the light-shielding wall includes a bottom surface facing the driving substrate, a top surface facing away from the driving substrate, and side surfaces connected between the top surface and the bottom surface, and the top surface forms an obtuse angle with the side surfaces.

[0060] In some embodiments, the obtuse angle is between 120° and 135°.

[0061] The present disclosure further provides a display substrate, comprising a carrying backplane and a plurality of light-emitting components as described above, wherein the plurality of light-emitting components are arranged in an array on the carrying backplane;

[0062] The carrying back plate includes a third driving circuit layer and a plurality of second conductive pads, and the fifth electrode is electrically connected to the second conductive pads;

[0063] The third driving circuit layer is electrically connected to the second conducting pad and is used to provide a second driving signal to the first driving circuit layer. BRIEF DESCRIPTION OF THE DRAWINGS

[0064] The accompanying drawings are used to provide a further understanding of the present disclosure and constitute a part of the specification. Together with the following detailed description, they are used to explain the present disclosure but do not constitute a limitation of the present disclosure. In the accompanying drawings:

[0065] FIG1 is a schematic diagram of a light-emitting assembly provided in some embodiments of the present disclosure.

[0066] FIG2 is a schematic diagram showing the position of a protection portion provided in some embodiments of the present disclosure.

[0067] 3A and 3B are schematic diagrams of the positions of protection parts provided in other embodiments of the present disclosure.

[0068] 4A and 4B are schematic diagrams showing the positions of protection parts provided in some further embodiments of the present disclosure.

[0069] 5 and 6 are schematic diagrams showing the positions of protection parts provided in some other embodiments of the present disclosure.

[0070] FIG7 is a schematic diagram of a light-emitting assembly provided in some other embodiments of the present disclosure.

[0071] FIG8 is a plan view of the light-emitting unit and the light-shielding wall in FIG7 .

[0072] FIG9 is another plan view of a single light-emitting unit in FIG7 .

[0073] FIG10 is a schematic diagram of a light-emitting component provided in some further embodiments of the present disclosure.

[0074] FIG11 is a schematic diagram of a display substrate provided in some embodiments of the present disclosure. DETAILED DESCRIPTION

[0075] The following describes the specific embodiments of the present disclosure in detail with reference to the accompanying drawings. It should be understood that the specific embodiments described herein are only used to illustrate and explain the present disclosure and are not intended to limit the present disclosure.

[0076] To make the purpose, technical solutions, and advantages of the embodiments of the present disclosure more clear, the technical solutions of the embodiments of the present disclosure will be clearly and completely described below in conjunction with the accompanying drawings of the embodiments of the present disclosure. Obviously, the described embodiments are part of the embodiments of the present disclosure, not all of the embodiments. Based on the described embodiments of the present disclosure, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present disclosure.

[0077] Unless otherwise defined, the technical terms or scientific terms used in the embodiments of the present disclosure should have the usual meanings understood by people with ordinary skills in the field to which the present disclosure belongs. The "first", "second" and similar words used in the present disclosure do not indicate any order, quantity or importance, but are only used to distinguish different components. Similarly, words such as "include" or "comprise" mean that the elements or objects appearing before the word include the elements or objects listed after the word and their equivalents, without excluding other elements or objects. Words such as "connect" or "connected" are not limited to physical or mechanical connections, but may include electrical connections, whether direct or indirect. "Up", "down", "left", "right" and the like are only used to indicate relative positional relationships. When the absolute position of the object being described changes, the relative positional relationship may also change accordingly.

[0078] As used herein, "parallel" and "perpendicular" include the conditions described and conditions similar to the conditions described, and the range of the similar conditions is within an acceptable deviation range, wherein the acceptable deviation range is determined by a person of ordinary skill in the art taking into account the measurement in question and the errors associated with the measurement of the specific quantity (i.e., the limitations of the measurement system). For example, "parallel" includes absolute parallelism and approximate parallelism, wherein the acceptable deviation range for approximate parallelism can be, for example, a deviation within 5°; "perpendicular" includes absolute perpendicularity and approximate perpendicularity, wherein the acceptable deviation range for approximate perpendicularity can also be, for example, a deviation within 5°.

[0079] It will be understood that when a layer or element is referred to as being on another layer or substrate, it can be directly on the other layer or substrate, or intervening layers may be present therebetween.

[0080] Exemplary embodiments are described herein with reference to cross-sectional and / or plan views that are idealized exemplary drawings. In the drawings, the thicknesses of layers and regions are exaggerated for clarity. Therefore, variations in shape relative to the drawings due to, for example, manufacturing techniques and / or tolerances are contemplated. Therefore, the exemplary embodiments should not be construed as limited to the shapes of the regions shown herein, but rather include deviations in shape due to, for example, manufacturing. Therefore, the regions shown in the drawings are schematic in nature, and their shapes are not intended to illustrate the actual shape of regions of the device and are not intended to limit the scope of the exemplary embodiments.

[0081] In an LED display substrate, the electrodes of the LED light-emitting units are bonded to the conductive pads of the driver substrate via a conductive layer. However, as the display substrate ages, the conductive layer is prone to corrosion by water and oxygen.

[0082] FIG1 is a schematic diagram of a light-emitting assembly provided in some embodiments of the present disclosure. As shown in FIG1 , the light-emitting assembly includes a driving substrate 10 and a light-emitting unit 20 disposed on the driving substrate 10 .

[0083] The light-emitting unit 20 has multiple electrodes 201, and the drive substrate 10 has multiple first conductive pads 11. Each electrode 201 corresponds to a first conductive pad 11, and different electrodes 201 correspond to different first conductive pads 11. The light-emitting component also includes a solder portion 32 and a protective portion 31. The electrodes 201 and the corresponding first conductive pads 11 are electrically connected via the solder portion 32. The protective portion 31 is arranged in contact with and surrounds the solder portion 32, and the protective portion 31 contacts at least one of the electrodes 201 and the first conductive pads 11.

[0084] In the embodiment of the present disclosure, a protective portion 31 is provided around the solder portion 32, and the protective portion 31 is in contact with the solder portion 32, thereby protecting the solder portion 32 and reducing or preventing the solder portion 32 from being corroded by external water and oxygen; and the protective portion 31 is in contact with at least one of the electrode 201 and the first conductive pad 11, thereby reducing or preventing the light-emitting unit 20 from being misaligned with the first conductive pad 11 due to force during subsequent processes, thereby improving the connection effect between the solder portion 32 and the first conductive pad 11 and the electrode 201, and thereby improving the stability of the light-emitting component.

[0085] In some embodiments, the solder portion 32 connected to each electrode 201 is surrounded by the protective portion 31, and the protective portions 31 corresponding to different solder portions 32 are arranged at intervals. For example, the protective portions 31 corresponding to different solder portions 32 do not contact each other.

[0086] In some embodiments, the material of the solder portion 32 includes tin, and the material of the protective portion 31 includes epoxy resin. During the manufacturing process of the light-emitting component, epoxy solder paste (i.e., a paste formed by mixing epoxy resin and tin powder) can be applied to one of the electrode 201 and the first conductive pad 11. The electrode 201 and the first conductive pad 11 are then soldered together using the epoxy solder paste. During the soldering process, the tin powder in the epoxy solder paste is heated and aggregates, while the epoxy resin flows toward the surrounding area, thereby forming the solder portion 32 and the protective portion 31 surrounding the solder portion 32.

[0087] Figure 2 is a schematic diagram of the position of the protection part provided in some embodiments of the present disclosure. In some embodiments, as shown in Figure 2, the protection part 31, the electrode 201, and the first conductive pad 11 corresponding to the electrode 201 form a first confined space, and the solder part 32 is located inside the first confined space.

[0088] For example, the orthographic projections of the electrode 201 and its corresponding first conductive pad 11 on the driving substrate 10 both cover at least a portion of the orthographic projection of the protection portion 31 on the driving substrate 10 .

[0089] Figures 3A and 3B are schematic diagrams of the position of the protective portion provided in other embodiments of the present disclosure. In other embodiments, the light-emitting unit 20 includes a first surface facing the driving substrate 10, and the driving substrate 10 includes a second surface facing the light-emitting unit 20. The protective portion 31 and the first surface and the second surface together constitute a second enclosed space that wraps the solder portion 32.

[0090] It should be noted that the first surface is the surface of the light-emitting unit 20 as a whole facing the drive substrate 10, and the first surface does not necessarily need to be a plane; the first surface includes the surface of the electrode 201 facing the drive substrate 10. Similarly, the second surface is the surface of the drive substrate 10 as a whole facing the light-emitting unit 20, and the second surface does not necessarily need to be a plane; the second surface includes the surface of the first conductive pad 11 facing the light-emitting unit 20.

[0091] As shown in FIG3A , the orthographic projection of the protection portion 31 on the drive substrate 10 may overlap with the orthographic projection of the surface of the electrode 201 on the drive substrate 10 facing the drive substrate 10. Alternatively, as shown in FIG3B , the orthographic projection of the protection portion 31 on the drive substrate 10 and the orthographic projection of the surface of the electrode 201 on the drive substrate 10 facing the drive substrate 10 may only contact but not overlap. Furthermore, as shown in FIG3A , the orthographic projection of the protection portion 31 on the drive substrate 10 may overlap with the orthographic projection of the surface of the first conductive pad 11 on the drive substrate 10 facing the light-emitting unit 20. Alternatively, as shown in FIG3B , the protection portion 31 only contacts the edge of the surface of the first conductive pad 11 facing the light-emitting unit 20, and the protection portion 31 and the surface of the first conductive pad 11 facing the light-emitting unit 20 do not overlap.

[0092] In one example, as shown in FIG3B , the protection portion 31 is disposed around the outer contour of the surface of the electrode 201 facing the first conducting pad 11 . The protection portion 31 is disposed around the outer contour of the surface of the first conducting pad 11 facing the electrode 201 .

[0093] 4A and 4B are schematic diagrams of the positions of the protection portions provided in some further embodiments of the present disclosure. As shown in FIG4A , the protection portion 31 and the solder portion 32 jointly wrap the electrode 201 so that the electrode 201 is in a sealed state; wherein, the protection portion 31 in FIG4A may not be in contact with the first conductive pad 11. Alternatively, as shown in FIG4B , the protection portion 31 and the solder portion 32 jointly wrap the first conductive pad 11 so that the first conductive pad 11 is in a sealed state, wherein, the protection portion 31 in FIG4B may not be in contact with the electrode 21. Alternatively, FIG4A and FIG4B may be combined, that is, the protection portion 31 and the solder portion 32 jointly wrap the electrode 201, and at the same time, the protection portion 31 and the solder portion 32 jointly wrap the first conductive pad 11, so that both the electrode 201 and the first conductive pad 11 are in a sealed state.

[0094] It should be noted that the first conductive pad 11 includes a first bottom surface facing away from the light-emitting unit 20, and the electrode 201 of the light-emitting unit 20 includes a second bottom surface facing away from the drive substrate 10. The protective portion 31 and the solder portion 32 jointly encapsulate the first conductive pad 11, meaning that the entire surface area of ​​the first conductive pad 11, except for the first bottom surface, is covered by the integral structure formed by the protective portion 31 and the solder portion 32. Similarly, the protective portion 31 and the solder portion 32 jointly encapsulate the electrode 201, meaning that the entire surface area of ​​the electrode 201, except for the second bottom surface, is covered by the integral structure formed by the protective portion 31 and the solder portion 32.

[0095] Figures 5 and 6 are schematic diagrams showing the positions of the protective portions provided in further embodiments of the present disclosure. As shown in Figures 5 and 6 , the protective portion 31 surrounds the outer contour of the surface of the electrode 201 facing the first conductive pad 11. Furthermore, as shown in Figure 5 , the protective portion 31 and the solder portion 32 can jointly cover the surface of the first conductive pad 11 facing the electrode 201. Alternatively, as shown in Figure 6 , the protective portion 31 also covers the side surfaces of the first conductive pad 11. In this case, the protective portion 31 and the solder portion 32 jointly wrap around the first conductive pad 11.

[0096] In some embodiments, the light-emitting unit 20 is a light-emitting diode, which can be a micro-LED or mini-LED. The multiple electrodes 201 of the light-emitting unit 20 include a first electrode 21 and a second electrode 22. The first electrode 21 serves as the anode of the light-emitting diode, and the second electrode 22 serves as the cathode of the light-emitting diode. As shown in FIG1 , the light-emitting unit 20 includes a first semiconductor layer 23, a light-emitting layer 25, and a second semiconductor layer 24, wherein the second semiconductor layer 24 is located on the light-emitting side of the light-emitting layer 25.

[0097] A passivation layer PVX is provided on the side of the first semiconductor layer 23, the light-emitting layer 25, and the second semiconductor layer 24 close to the drive substrate 10. The first electrode 21 and the second electrode 22 are provided on the side of the passivation layer PVX close to the drive substrate 10. The first electrode 21 is electrically connected to the first semiconductor layer 23 through a via hole penetrating the passivation layer PVX, and the second electrode 22 is electrically connected to the second semiconductor layer 24 through a via hole penetrating the passivation layer PVX.

[0098] Figure 7 is a schematic diagram of a light-emitting component provided in some other embodiments of the present disclosure, Figure 8 is a plan view of the light-emitting unit and the light-shielding wall in Figure 7, and Figure 9 is another plan view of a single light-emitting unit in Figure 7. As shown in Figures 7 to 9, the light-emitting component includes a driving substrate 10 and a light-emitting unit 20 arranged on the driving substrate 10, the light-emitting unit 20 has a plurality of electrodes 201, the driving substrate 10 has a plurality of first conductive pads 11, and each electrode 201 is electrically connected to a first conductive pad 11.

[0099] The plurality of electrodes 201 of the light emitting unit 20 include a third electrode 23 and a fourth electrode 24. The light emitting unit 20 includes a first semiconductor layer 23, a light emitting layer 25, and a second semiconductor layer 24, wherein the second semiconductor layer 24 is located on the light emitting side of the light emitting layer 25. One of the first semiconductor layer 23 and the second semiconductor layer 24 is an N-type semiconductor layer, and the other is a P-type semiconductor layer. The N-type semiconductor layer may include n-type GaN, and the P-type semiconductor layer may include In x Al y Ga 1-x-yA p-type nitride semiconductor layer with the composition N(0 ≤ x < 1, 0 ≤ y < 1, 0 ≤ x + y < 1), and the p-type impurity can be magnesium. For example, the p-type semiconductor layer can be a single-layer structure, but in some exemplary embodiments, it can have a multi-layer structure containing different compositions. The light-emitting layer 25 can be a multi-quantum well light-emitting layer, in which the quantum well layer and the quantum barrier layer are stacked alternately with each other. For example, the quantum well layer and the quantum barrier layer can respectively include In x Al y Ga 1-x-y N(0 ≤ x ≤ 1, 0 ≤ y ≤ 1, 0 ≤ x + y ≤ 1) with different compositions. In one example, the quantum well layer can include In x Ga 1-x N(0 < x ≤ 1) composition, and the quantum barrier layer can include GaN or AlGaN.

[0100] Optionally, the light-emitting unit 20 can further include a current spreading layer (not shown), which is disposed on the side of the p-type semiconductor layer away from the light-emitting layer 25. Among them, the material of the current spreading layer can be indium tin oxide (ITO).

[0101] The first semiconductor layer 23 includes a plurality of spaced-apart first semiconductor portions 231, the light-emitting layer 25 includes a plurality of spaced-apart light-emitting portions 251, and the second semiconductor layer 24 includes a plurality of spaced-apart second semiconductor portions 241; the light-emitting unit 20 includes a plurality of sub-light-emitting unit portions 20a, and one first semiconductor portion 231 and one second semiconductor portion 241 are respectively disposed on both sides of each light-emitting portion 251 to form a sub-light-emitting unit portion 20a.

[0102] The third electrode 23 is electrically connected to one of the plurality of first semiconductor portions 231, and the fourth electrode 24 is electrically connected to one of the plurality of second semiconductor portions 241.

[0103] The light-emitting unit 20 further includes one or more connecting electrodes 201. The first end of the connecting electrode 201 is electrically connected to the first semiconductor portion 231 of one sub-light-emitting unit portion 20a, and the second end of the connecting electrode 201 is electrically connected to the second semiconductor portion 241 of another sub-light-emitting unit portion 20a to connect the plurality of sub-light-emitting unit portions 20a in series.

[0104] In the embodiments of the present disclosure, by connecting the plurality of sub-light-emitting unit portions 20a in series, the overall utilization rate of the driving current of the light-emitting unit 20 can be improved, and the energy consumption waste can be reduced.

[0105] Among them, the number of sub-light-emitting unit portions 20a in the light-emitting unit 20 can be two (as shown in Figure 8), three (as shown in Figure 9), or even more, and the embodiments of the present disclosure do not make specific limitations.

[0106] 8 , multiple sub-light emitting units 20a in the same light emitting unit 20 can be arranged sequentially along the first direction. When the light emitting assembly includes multiple light emitting units 20, the multiple light emitting units 20 can be arranged sequentially along a second direction that intersects the first direction, for example, perpendicular to the first direction.

[0107] Optionally, in Figure 7, each of the third electrode 23 and the fourth electrode 24 is electrically connected to a first conductive pad 11 of the drive substrate 10 through a solder portion 32, and a protective portion 31 is provided around the solder portion 32, and the protective portion 31 is in contact with at least one of the electrode 201 and the first conductive pad 11.

[0108] In FIG. 7 , the arrangement of the solder portion 32 and the protection portion 31 may refer to the above description of FIG. 1 to FIG. 6 , which will not be repeated here.

[0109] 7 , the light emitting assembly further includes a passivation layer PVX, which is located on the side of the plurality of sub-light emitting units 20 facing the driving substrate 10. Optionally, the material of the passivation layer PVX may include at least one of silicon nitride, silicon oxide, and silicon oxynitride.

[0110] The third electrode 23 and the fourth electrode 24 are both located on the side of the passivation layer PVX facing the drive substrate 10. The third electrode 23 is electrically connected to one of the plurality of first semiconductor portions 231 via a first via hole V1 penetrating the passivation layer PVX, and the fourth electrode 24 is electrically connected to one of the plurality of second semiconductor portions 241 via a second via hole V2 penetrating the passivation layer PVX.

[0111] In some embodiments, the passivation layer PVX includes a first sub-passivation layer PVX1 and a second sub-passivation layer PVX2, which are sequentially arranged in a direction away from the drive substrate 10. The connecting electrode 201 is located between the first sub-passivation layer PVX1 and the second sub-passivation layer PVX2. The first end of the connecting electrode 201 is electrically connected to the first semiconductor portion 231 of one sub-light-emitting unit portion 20a via a third via hole V3 penetrating the second sub-passivation layer PVX, and the second end of the connecting electrode 201 is electrically connected to the second semiconductor portion 241 of another sub-light-emitting unit portion 20a via a fourth via hole V4 penetrating the second sub-passivation layer PVX. Disposing the connecting electrode 201 between the first sub-passivation layer PVX1 and the second sub-passivation layer PVX2 can prevent the connecting electrode 201 from accidentally contacting the first conductive pad 11.

[0112] In some embodiments, as shown in FIG. 7 , the protection portion 31 may be in contact with the passivation layer PVX to ensure that the protection portion 31 and the solder portion 32 can fully wrap the electrode 201 of the light emitting unit 20 , thereby improving the protection effect on the electrode 201 .

[0113] In some embodiments, as shown in Figure 7, the first semiconductor layer 23 is located on the side of the light-emitting layer 25 close to the driving substrate 10. The first semiconductor layer 23 also includes a first redundant portion 233 spaced apart from the first semiconductor portion 231. The light-emitting layer 25 also includes a second redundant portion 252 spaced apart from the light-emitting portion 251.

[0114] The orthographic projection of the fourth electrode 24 on the driver substrate 10 overlaps with the orthographic projections of the first redundant portion 233 and the second redundant portion 252 on the driver substrate 10. This allows the first redundant portion 233 and the second redundant portion 252 to support the fourth electrode 24, improving the flatness of the fourth electrode 24 and ensuring good contact between the fourth electrode 24 and the first conductive pad 11. Furthermore, the first redundant portion 233 is located in the first semiconductor layer 23, while the second redundant portion 252 is located in the light-emitting layer 25. That is, the first redundant portion 233 is disposed on the same layer as the first semiconductor portion 231, while the second redundant portion 252 is disposed on the same layer as the light-emitting portion 251. This allows the first redundant portion 233 and the first semiconductor portion, as well as the second redundant portion 252 and the light-emitting portion 251, to be fabricated simultaneously, eliminating the need for separate processes to fabricate the first redundant portion 233 and the light-emitting portion 251.

[0115] Furthermore, the orthographic projections of the first redundant portion 233 and the second redundant portion 252 on the driving substrate 10 can be located within the orthographic projection range of the second semiconductor portion 241 on the driving substrate 10, so that the second semiconductor portion 241 can also play a supporting role for the fourth electrode 24, thereby further improving the flatness of the fourth electrode 24.

[0116] As shown in Figures 7 to 9, the first redundant part 233 has a fifth via V5, and the second redundant part 252 has a sixth via V6. The fifth via V5 and the sixth via V6 both surround the second via V2, and the side walls of the fifth via V5 and the second via V2, as well as the side walls of the sixth via V6 and the second via V2 are filled with a passivation layer PVX to ensure that the first redundant part 233 and the third electrode 23, as well as the second redundant part 252 and the third electrode 23 are insulated and separated by the passivation layer PVX.

[0117] In some embodiments, as shown in Figures 7 to 9, the first semiconductor layer 23 further includes a third redundant portion 232 spaced apart from the first semiconductor portion, and the light-emitting layer 25 further includes a fourth redundant portion 253 spaced apart from the light-emitting portion 251. The orthographic projection of the third electrode 23 on the driver substrate 10 overlaps with the orthographic projections of the third redundant portion 232 and the fourth redundant portion 253 on the driver substrate 10. This allows the third redundant portion 232 and the fourth redundant portion 253 to support the fourth electrode 24, improving the flatness of the third electrode 23 and ensuring good contact between the third electrode 23 and the first conductive pad 11. Furthermore, the third redundant portion 232 is located in the first semiconductor layer 23, and the fourth redundant portion 253 is located in the light-emitting layer 25. This allows the third redundant portion 232 and the first semiconductor portion 231, as well as the light-emitting layer 25 and the fourth redundant portion 253, to be fabricated simultaneously, eliminating the need for separate processes to fabricate the third redundant portion 232 and the fourth redundant portion 253.

[0118] Furthermore, the orthographic projections of the third redundant portion 232 and the fourth redundant portion 253 on the driving substrate 10 can be located within the orthographic projection range of the second semiconductor portion 241 on the driving substrate 10, so that the second semiconductor portion 241 can also play a supporting role for the third electrode 23, thereby further improving the flatness of the third electrode 23.

[0119] In some embodiments, for the structures shown in FIG1 and FIG7 , the light-emitting assembly may further include a buffer layer 26. The buffer layer 26 is located on a side of the light-emitting unit 20 away from the driving substrate 10. Multiple light-emitting units 20 of the light-emitting assembly may be disposed on the same buffer layer 26. For example, the material of the buffer layer 26 may include GaN.

[0120] In some embodiments, for the structures shown in Figures 1 and 7 , the light-emitting assembly may further include a color conversion unit. Specifically, the light-emitting assembly may include multiple light-emitting units 20 , and further include: a color conversion unit disposed on the light-emitting side of the multiple light-emitting units 20 , and a first substrate 41 located on a side of the color conversion unit away from the multiple light-emitting units 20 .

[0121] The color conversion unit includes a defining dam layer 46, multiple optically functional portions, and a first encapsulation layer 47. The defining dam layer 46 has multiple openings; the openings correspond one-to-one with the light-emitting units 20, allowing light emitted by the light-emitting units 20 to pass through the openings. The optically functional portions 44 are arranged one-to-one and located in the corresponding openings. At least a portion of the optically functional portions 44 is configured to convert the color of light entering the optically functional portions 44. The first encapsulation layer 47 is located on the side of the defining dam layer 46 facing away from the first substrate 41 to encapsulate the defining dam layer 46 and the multiple optically functional portions 44, thereby protecting them.

[0122] For example, the first substrate 41 is a glass substrate. Specifically, the first substrate 41 is transparent in the visible light band.

[0123] Exemplarily, as shown in FIG7 , the first encapsulation layer 47 can also encapsulate the peripheral surface of the dam layer 46 . The light-emitting component further includes a second encapsulation layer 42 . The second encapsulation layer 42 can encapsulate the side surface of the dam layer 46 close to the first substrate 41 .

[0124] In some embodiments, the color conversion unit further includes a light shielding layer 45 and a filter unit 43. The light shielding layer 45 is located between the first substrate 41 and the defining dam layer 46. The light shielding layer 45 includes a plurality of light holes, with a plurality of opening areas corresponding to the plurality of light holes. The orthographic projection of each light hole on the first substrate 41 overlaps with the orthographic projection of the corresponding opening area on the first substrate 41, so that light emitted through the plurality of opening areas can pass through the light holes and be emitted from the light-emitting side of the light-emitting component. The filter unit 43 is located between the first substrate 41 and the optical functional portion 44. For example, the filter unit 43 can be located between the second encapsulation layer 42 and the optical functional portion 44. The orthographic projection of the filter unit 43 on the first substrate 41 overlaps with the orthographic projection of the corresponding light hole on the first substrate 41. The filter unit 43 and the optical functional part 44 are arranged in a one-to-one correspondence, and the orthographic projection of the filter unit 43 on the first substrate 41 overlaps with the orthographic projection of the corresponding optical functional part 44 on the first substrate 41, so that the light passing through the optical functional part 44 can enter the filter unit 43, and the filter unit 43 filters the light to obtain light of a specified color (or wavelength).

[0125] In some examples, the light emitted by the light emitting unit 20 is blue light or ultraviolet light. For example, the optical function portion 44 is made of a quantum dot material, which can emit light under the excitation of ultraviolet light or blue light.

[0126] In some examples, the optical function portion 44 includes a first functional portion, a second functional portion, and a third functional portion. Specifically, the first functional portion is configured to convert light emitted by the light-emitting functional layer into red light; the second functional portion is configured to convert light emitted by the light-emitting functional layer into green light; and the third functional portion is configured to convert light emitted by the light-emitting functional layer into blue light or maintain the light in a blue state. The plurality of filter units 43 are provided in a one-to-one correspondence with the plurality of light passage holes.

[0127] Exemplarily, the first functional portion includes a red quantum dot material that converts light into red light. Preferably, the first functional portion also includes scattering particles for scattering light. Here, light emitted from the corresponding light-emitting functional layer, upon striking the first functional portion distributed within the corresponding opening area, is converted into red light by the red quantum dots. The scattering particles scatter the red light and the red light, ensuring that more light is converted into red light by the red quantum dots and that the converted red light has a larger emission angle, thereby ensuring a wider viewing angle for the light-emitting component.

[0128] Exemplarily, the second functional portion includes a green quantum dot material that converts light into green light. Preferably, the first functional portion also includes scattering particles for scattering light. Here, light emitted from the corresponding light-emitting functional layer, upon striking the first functional portion distributed within the corresponding opening area, is converted into green light by the green quantum dots. The scattering particles scatter the green light and the green light, ensuring that more light is converted into green light by the green quantum dots and that the converted green light has a wide emission angle, thereby widening the viewing angle of the light-emitting component.

[0129] Exemplarily, the third functional portion is used to convert light into blue light or maintain blue light emission. Exemplarily, when the light contains only blue light, the third functional portion can be a transparent portion or include blue quantum dots; wherein the transparent portion is used for direct transmission of light, and the blue quantum dots can be used to convert the light into blue light with a wavelength different from that of the light. Preferably, the third functional portion also includes scattering particles for scattering the light. Here, after the light emitted by the corresponding light-emitting functional layer is emitted to the third functional portion distributed in the corresponding opening area, the scattering particles can scatter the light to ensure that the blue light has a larger emission angle, thereby ensuring that the viewing angle of the light-emitting component integrated with such a light-emitting component is larger. For example, when the light contains ultraviolet light, the third functional portion includes blue quantum dots that convert the light into blue light, or the third functional portion is simultaneously distributed with scattering particles for scattering the light and blue quantum dots for converting ultraviolet light into blue light.

[0130] Moreover, the multiple filter units 43 include a first filter unit, a second filter unit and a third filter unit; wherein the first filter unit is a red color block or a red-green-transparent blue-reflecting filter film, and is arranged corresponding to the first functional part to ensure that red light passes through; the second filter unit is a green color block or a red-green-reflecting blue-reflecting filter film, and is arranged corresponding to the second functional part to ensure that green light passes through; the third filter unit is a blue color block or a transparent layer, and is arranged corresponding to the third functional part to ensure that blue light passes through.

[0131] For example, the red color resist can transmit red light and absorb light of other colors. In this way, light emitted from the first functional portion can be emitted after passing through the first filter unit, and the first filter unit can filter out light of other colors except red light to ensure that the blue light component in the light is filtered out.

[0132] Illustratively, the red-green anti-blue filter film can allow the red light portion of the light emitted from the first functional part to pass through and reflect the blue light. In this way, the red light in the light can be emitted through the first filter unit, while the blue light can be reflected back to the first functional part by the first filter unit, so that the red quantum dots in the first functional part can excite the blue light into red light, thereby further improving the excitation efficiency of the red quantum dots.

[0133] For example, the green color resist can transmit green light and absorb light of other colors. In this way, light emitted from the second functional portion can be emitted after passing through the second filter unit, and the second filter unit can filter out light of other colors except green light to ensure that the blue light component in the light is filtered out.

[0134] Illustratively, the above-mentioned red-green-transmitting and blue-reflecting filter film can allow the green light portion of the light emitted from the second functional part to pass through and reflect the blue light. In this way, the green light in the light can be emitted through the second filter unit, while the blue light can be reflected back to the second functional part by the second filter unit, so that the green quantum dots in the second functional part can excite the blue light into green light, thereby further improving the excitation efficiency of the green quantum dots.

[0135] For example, the blue color resist can transmit blue light and absorb light of other colors. Thus, light emitted from the third functional portion can pass through the third filter unit before exiting, and the third filter unit can filter out light of other colors except blue light, thereby transmitting relatively pure blue light.

[0136] For example, since the first functional portion, the second functional portion, and the third functional portion can all generate blue light, a transparent layer is used as the third filter unit to transmit the blue light.

[0137] 1 and 7 , the light emitting assembly may further include a bonding adhesive layer 48. The buffer layer 26 is disposed between the light emitting unit 20 and the color conversion unit, and at least a portion of the bonding adhesive layer 48 is located between the buffer layer 26 and the color conversion unit.

[0138] In some embodiments, as shown in Figures 1 and 7, the drive substrate 10 includes a base 12 and a first drive circuit layer 13 located on the base 12. The first drive circuit layer 13 is electrically connected to the first conductive pad 11 and is used to provide a drive signal to the first conductive pad 11. The base 12 can be a flexible substrate made of an organic material such as polyimide (PI). The first drive circuit layer 13 can include a pixel drive circuit, which can include at least one thin film transistor.

[0139] For example, the driving substrate 10 also includes a planarization layer PNL, which is located on the side of the pixel driving circuit away from the substrate 12. The first conductive pad 11 is located on the side of the planarization layer PNL away from the substrate 12 and is electrically connected to the pixel driving circuit through a via hole passing through the planarization layer PNL.

[0140] In some embodiments, the light-emitting assembly can be a display substrate, and the plurality of light-emitting units 20 in the light-emitting assembly are arranged in an array on a drive substrate 10. The drive substrate 10 includes a second drive circuit layer, which is electrically connected to the first conductive pad 11 and is configured to provide a first drive signal to the first drive circuit layer 13. Driven by the first drive signal, the first drive circuit layer 13 provides a third drive signal to the light-emitting units 20. In this case, a carrier backplane is not required.

[0141] In other embodiments, the driving substrate 10 further includes a fifth electrode 15. At least a portion of the fifth electrode 15 is located on a side of the substrate 12 facing away from the light-emitting unit 20. The fifth electrode 15 is electrically connected to the first driving circuit layer 13 via a conductive structure 14 that penetrates the substrate 12. The fifth electrode 15 may be entirely located on the side of the substrate 12 facing away from the light-emitting unit 20, or may be partially located on the side of the substrate 12 facing away from the light-emitting unit 20, with the remaining portion embedded within the substrate 12.

[0142] In this case, the light-emitting unit 20 is stacked with the driving substrate 10, and the driving substrate 10 can be set on the carrying backplane, and the fifth electrode 15 is electrically connected to the third driving circuit layer of the carrying backplane, so that the signal of the third driving circuit layer is provided to the first driving circuit layer 13, and the first driving circuit layer 13 provides a driving signal to the light-emitting unit 20 according to the signal of the third driving circuit layer.

[0143] In some traditional micro light emitting diode (Micro LED) display panels, a driving backplane is usually included, as well as a driving circuit layer integrated on the driving backplane and a light-emitting chip bonded to the driving circuit layer. When preparing the display panel, in order to achieve color display, it is necessary to transfer and bond light-emitting chips of different colors to the driving backplane integrated with the driving circuit layer, and the light-emitting chips of the same color are transferred at the same time, and the light-emitting chips of different colors are transferred in batches. That is, the number of transfers is the number of colors of the light-emitting chip. Optionally, the light-emitting chip includes three colors of light-emitting chips, such as a red (red, R) light-emitting chip, a green (green, G) light-emitting chip and a blue (blue) light-emitting chip, and three transfers are required. The number of transfers when preparing the Micro LED display panel in this solution is large, and the process is more complicated. In addition, in order to reduce the manufacturing cost of the Micro LED display panel, the size of the driving backplane will not be designed to be too large (because if it is designed too large, if some of the light-emitting chips fail to emit light after the transfer, the entire product will be scrapped and the cost will be higher). Therefore, if this solution needs to achieve a large-size display, it can only be achieved by splicing, and the display effect is poor.

[0144] In the embodiment of the present disclosure, the light-emitting component may include multiple light-emitting units and color conversion units, so that the light-emitting component can emit red, green, and blue light. In addition, the light-emitting component has its own driving substrate. Therefore, when a display panel of a certain size needs to be prepared, a corresponding number of light-emitting components are used to transfer and bond with the carrier backplane at one time to realize the preparation of a glass-based color light-emitting diode (LED) display panel. At the same time, this solution only requires one transfer process, which is relatively simple. Moreover, large-size display can be achieved without splicing, which can improve the glass utilization rate of the carrier backplane, thereby reducing costs. In addition, the light-emitting component can realize electrical / optical dual detection through detection technology to screen out chips that meet the requirements of both optical performance and driving performance. In this way, compared with the solution of integrating the driving circuit layer on the driving backplane and bonding multiple light-emitting chips on the driving backplane, it is more conducive to improving the chip yield on the display panel and facilitating the repair and replacement of defective chips.

[0145] In some embodiments, as shown in Figures 1 and 7, the light-emitting assembly further includes a light-shielding wall 50, which surrounds each light-emitting unit 20 in the light-emitting assembly. The light-emitting unit 20 includes a first semiconductor layer 23, a light-emitting layer 25, and a second semiconductor layer 24, which are stacked, wherein the second semiconductor layer 24 is located on the light-emitting side of the light-emitting layer 25. The light-emitting layer 25 has a first surface facing the drive substrate 10 and a second surface away from the drive substrate 10. The light-shielding wall 50 has a third surface close to the drive substrate 10 and a fourth surface away from the drive substrate 10. The distance from the third surface to the base 12 of the drive substrate 10 is less than or equal to the distance from the first surface to the base 12; the distance from the fourth base to the base 12 is greater than or equal to the distance from the second surface to the base 12. When multiple light-emitting assemblies are provided in the display device, the provision of the light-shielding wall 50 can prevent crosstalk between light from different light-emitting assemblies.

[0146] In some embodiments, when the light-emitting assembly further includes a color conversion unit disposed on the light-emitting side of the light-emitting unit 20, the light-shielding wall 50 is disposed on the surface of the color conversion unit facing the drive substrate 10. Specifically, when the color conversion unit includes the first encapsulation layer 47 described above, the light-shielding wall 50 is disposed on the surface of the first encapsulation layer 47 facing the drive substrate 10.

[0147] Among them, when the light-emitting component includes a light-shielding wall 50, as shown in Figures 1 and 7, a portion of the bonding adhesive layer 48 can be located between the buffer layer 26 and the color conversion unit, and another portion can be located between the light-emitting unit 20 and the light-shielding wall 50, thereby ensuring the stability of the arrangement of the light-emitting unit 20, the color conversion unit and the light-shielding wall 50.

[0148] In some embodiments, there is a gap between the light shielding wall 50 and the driving substrate 10 .

[0149] In some embodiments, the light-shielding wall 50 includes a bottom surface facing the driving substrate 10, a top surface facing away from the driving substrate 10, and a side surface connected between the top surface and the bottom surface, and the top surface and the side surface form an obtuse angle α to reduce the light emitted by the light-emitting unit 20 from leaking out from the gap between the light-shielding wall 50 and the driving substrate 10.

[0150] Optionally, the obtuse angle α is between 120° and 135°. Optionally, the light-shielding barrier wall 50 may be in a trapezoidal shape in a longitudinal section perpendicular to its extending direction.

[0151] Figure 10 is a schematic diagram of the light-emitting component provided in some other embodiments of the present disclosure. In the embodiment shown in Figure 10, the light-shielding wall 50 is in contact with the driving substrate 10, and a third enclosed space for accommodating the light-emitting unit 20 is formed between the light-shielding wall 50, the color conversion unit and the driving substrate 10, thereby preventing crosstalk between light from different light-emitting components and preventing the light-emitting unit 20, the first conductive pad 11 and the solder portion 32 from being corroded by external water and oxygen.

[0152] In FIG. 10 , an obtuse angle of 120° to 135° may be formed between the top surface and the side surface of the light-shielding barrier 50 .

[0153] In some embodiments, the orthographic projection of the light-shielding wall 50 on the driving substrate 10 and the orthographic projection of the buffer layer 26 on the driving substrate 10 have a spacing of 5 to 8 μm. In the process of manufacturing the light-emitting component, a color conversion unit can be first prepared on the first substrate 41, and then the light-shielding wall 50 can be formed. The stacked structure of the buffer layer 26 and the light-emitting unit 20 can be bonded to the area surrounded by the light-shielding wall 50 using the bonding adhesive layer 48. Leaving a spacing of 5 to 8 μm between the orthographic projection of the light-shielding wall 50 and the orthographic projection of the buffer layer 26 can ensure that during the manufacturing process of the light-emitting component, even if there are process tolerances, the buffer layer 26 and the light-emitting unit 20 can fall within the area surrounded by the light-shielding wall 50.

[0154] In some embodiments, the light-emitting component includes multiple light-emitting units 20, the fourth electrodes 24 of the multiple light-emitting units 20 are negative electrodes, and the third electrodes 23 are positive electrodes. The fourth electrodes 24 of the multiple light-emitting units 20 can be electrically connected to the same first conductive pad 11 of the driving substrate 10 to simplify the overall structure.

[0155] The following describes the preparation process of the light-emitting component by taking the light-emitting component in FIG. 7 as an example, which specifically includes the following steps S1 to S9 .

[0156] S1. Prepare a wafer including a plurality of light emitting units 20. This step S1 may specifically include S11 to S17:

[0157] S11 . Performing surface treatment on the sapphire substrate 12 or the silicon-based substrate 12 , and then sequentially depositing a buffer material layer, a second semiconductor material layer, a light-emitting material layer, and a first semiconductor material layer.

[0158] S12. Patterning the first semiconductor material layer to form the first semiconductor portions 231 and the first redundant portion of the plurality of light-emitting units 20; patterning the light-emitting material layer to form the light-emitting portions 251 of the plurality of light-emitting units 20; and patterning the second semiconductor material layer to form the second semiconductor portions 241 of the plurality of light-emitting units 20. Each light-emitting unit 20 includes a plurality of sub-light-emitting unit portions 20a, each of which includes a light-emitting portion 251 and a first semiconductor portion 231 and a second semiconductor portion 241 located on either side of the light-emitting portion 251.

[0159] S13 , forming a second sub-passivation layer PVX2 , and performing a patterning process on the second sub-passivation layer PVX2 to form a third via hole V3 and a fourth via hole V4 .

[0160] S14: Form a first conductive material layer and pattern it to form a connecting electrode 201. The first end of the connecting electrode 201 is electrically connected to the first semiconductor portion 231 of one sub-light-emitting unit 20a through the third via V3, and the second end of the connecting electrode 201 is electrically connected to the second semiconductor portion 241 of another sub-light-emitting unit 20a through the fourth via V4. The provision of the connecting electrode 201 connects the multiple sub-light-emitting units 20a in the light-emitting unit 20 in series.

[0161] S15 , forming a first sub-passivation layer PVX1 , and performing a patterning process on the first sub-passivation layer PVX1 and the second sub-passivation layer PVX2 to form a first via hole V1 and a second via hole V2 .

[0162] S16: Form a second conductive material layer and perform a patterning process on it to form a third electrode 23 and a fourth electrode 24. The third electrode 23 is electrically connected to a first semiconductor portion 231 through a first via hole V1, and the fourth electrode 24 is electrically connected to a second semiconductor portion 241 through a second via hole V2.

[0163] S17 , bonding the light-emitting unit 20 to a temporary carrier, and removing the original sapphire substrate or silicon-based substrate.

[0164] S18 , cutting the temporary carrier bonded with the light-emitting units 20 to obtain a plurality of small-sized wafers, each wafer including, for example, three light-emitting units.

[0165] S2, forming a color filter cover. Specifically, step S2 includes the following steps S21 to S24:

[0166] S21 , forming a light shielding layer 45 and a first sub-encapsulation layer in sequence on the first substrate 41 .

[0167] S22 , forming a plurality of filter units 43 and a defining dam layer 46 on a side of the first sub-encapsulation layer away from the first substrate 41 , wherein the defining dam layer 46 has a plurality of opening areas, and the opening areas correspond one-to-one to the filter units 43 .

[0168] S23 , forming a plurality of optical function parts 44 , wherein the optical function parts 44 are located inside the opening area and are arranged in a one-to-one correspondence with the opening area.

[0169] S24: Form a second sub-encapsulation layer. The first sub-encapsulation layer and the second sub-encapsulation layer are connected to form an encapsulation layer. The first sub-encapsulation layer and the second sub-encapsulation layer can be made of the same material, for example, both inorganic materials such as silicon nitride, silicon oxide, or silicon oxynitride.

[0170] S3. Cut the color film cover plate into a plurality of sub-cover plates. For example, the diameter of each sub-cover plate is 4 inches or 8 inches.

[0171] S4. Form a light-shielding barrier 50 on the sub-cover plate.

[0172] S5 , bonding the small-sized wafer to the sub-cover plate using the bonding adhesive layer 48 , wherein the wafer is located on a side of the optical function portion 44 away from the first substrate 41 and is located in the area surrounded by the light-shielding walls 50 .

[0173] S6. Removing the temporary carrier, wherein the bonding adhesive between the temporary carrier and the light-emitting unit 20 can be reduced by laser irradiation, thereby removing the temporary carrier.

[0174] S7. Provide a drive substrate 10, comprising a base and a first drive circuit layer located on the base, wherein the first drive circuit layer is electrically connected to the first conductive pad 11. The drive substrate 10 further comprises a fifth electrode 15, wherein at least a portion of the fifth electrode 15 is located on a side of the base facing away from the light-emitting unit 20, and the fifth electrode 15 is electrically connected to the first drive circuit layer via a conductive structure extending through the base.

[0175] S8. Forming a large-sized chip. Specifically, epoxy solder paste is formed on the third electrode 23 and the fourth electrode 24 of the light-emitting unit 20, and the third electrode 23 and the fourth electrode 24 are soldered to the corresponding first conductive pad 11 using the epoxy solder paste. During the soldering process, the tin powder in the epoxy solder paste is heated and aggregates, while the epoxy resin flows toward the surrounding area, thereby forming a solder portion 32 and a protective portion 31 surrounding the solder portion 32.

[0176] S9, cutting the large-size chip to obtain a plurality of light-emitting components, wherein each light-emitting component includes a plurality of light-emitting units 20, and the plurality of light-emitting units 20 are surrounded by light-shielding walls 50.

[0177] For the light-emitting component in FIG1 , the preparation process thereof is similar to that of the light-emitting component shown in FIG7 , and will not be described in detail here.

[0178] The present disclosure also provides a display substrate including a plurality of light-emitting components as described in the above embodiments. FIG11 is a schematic diagram of a display substrate provided in some embodiments of the present disclosure. As shown in FIG11 , a plurality of light-emitting components are arrayed on a carrier backplane 60 .

[0179] The carrier backplane 60 includes a third drive circuit layer 61 and a plurality of second conductive pads 62. The fifth electrode 15 is electrically connected to the second conductive pads 62. The third drive circuit layer 61 is electrically connected to the second conductive pads 62 to provide a second drive signal to the first drive circuit layer 13. The first drive circuit layer 13 drives the light-emitting unit 20 to emit light according to the second drive signal.

[0180] It is understood that the above embodiments are merely exemplary embodiments for illustrating the principles of the present disclosure, and the present disclosure is not limited thereto. Those skilled in the art may make various modifications and improvements without departing from the spirit and substance of the present disclosure, and such modifications and improvements are also considered to be within the scope of protection of the present disclosure.

Claims

1. A light-emitting component, comprising: Driving substrate and light-emitting unit; The light emitting unit has a plurality of electrodes, and the driving substrate has a plurality of first conductive pads; The light emitting component further includes a solder portion and a protection portion, and the electrode and the corresponding first conductive pad are electrically connected via the solder portion; The protection portion is in contact with and surrounds the solder portion, and is in contact with at least one of the electrode and the first conductive pad.

2. The light emitting assembly according to claim 1, wherein: The material of the solder portion includes tin, and the material of the protection portion includes epoxy resin.

3. The light emitting assembly according to claim 1, wherein: A first enclosed space is formed between the protection portion, the electrode, and the first conductive pad corresponding to the electrode, and the solder portion is located inside the first enclosed space.

4. The light emitting assembly according to claim 1, wherein: The light emitting unit includes a first surface facing the driving substrate, the driving substrate includes a second surface facing the light emitting unit, and the protection portion, the first surface, and the second surface together form a second enclosed space enclosing the solder portion.

5. The light emitting assembly according to claim 4, wherein: The protection portion is disposed around an outer contour of a surface of the electrode facing the first conducting pad, and / or the protection portion is disposed around an outer contour of a surface of the first conducting pad facing the electrode. The light emitting assembly according to claim 1 , wherein: The protection portion and the solder portion together wrap the first conductive pad so that the first conductive pad The pad is sealed, and / or The protection portion and the solder portion together wrap the electrode, so that the electrode is in a sealed state.

7. The light-emitting assembly according to any one of claims 1 to 6, wherein: The light emitting unit is a light emitting diode, and the plurality of electrodes include a first electrode and a second electrode; The first electrode is the anode of the light-emitting diode, and the second electrode is the cathode of the light-emitting diode.

8. The light-emitting assembly according to any one of claims 1 to 6, wherein: The plurality of electrodes include a third electrode and a fourth electrode; The light emitting unit comprises a first semiconductor layer, a light emitting layer and a second semiconductor layer which are stacked, wherein the second semiconductor layer is located on the light emitting side of the light emitting layer; The first semiconductor layer includes a plurality of first semiconductor portions spaced apart from each other, the light-emitting layer includes a plurality of light-emitting portions spaced apart from each other, and the second semiconductor layer includes a plurality of second semiconductor portions spaced apart from each other; the light-emitting unit includes a plurality of sub-light-emitting unit portions, and one of the first semiconductor portion and one of the second semiconductor portions are respectively disposed on both sides of each light-emitting portion to constitute one sub-light-emitting unit portion; wherein the third electrode is electrically connected to one of the plurality of first semiconductor portions, and the fourth electrode is electrically connected to one of the plurality of second semiconductor portions; The light emitting unit further includes one or more connecting electrodes, a first end of the connecting electrode being electrically connected to the first semiconductor portion of one of the sub-light emitting unit portions, and a second end of the connecting electrode being electrically connected to the second semiconductor portion of another sub-light emitting unit portion, so that the multiple sub-light emitting unit portions are connected in series.

9. The light emitting assembly according to claim 8, wherein: The light emitting component further includes a passivation layer, which is located on a side of the plurality of sub-light emitting units facing the drive substrate, and the third electrode and the fourth electrode are both located on a side of the passivation layer facing the drive substrate. The third electrode is electrically connected to one of the first semiconductor portions through a first via hole penetrating the passivation layer, and the fourth electrode is electrically connected to one of the second semiconductor portions through a second via hole penetrating the passivation layer.

10. The light emitting assembly according to claim 9, wherein: The passivation layer includes a first sub-passivation layer and a second sub-passivation layer arranged in sequence along a direction away from the drive substrate, the connecting electrode is located between the first sub-passivation layer and the second sub-passivation layer, the first end of the connecting electrode is electrically connected to the first semiconductor portion of one of the sub-light-emitting unit portions through a third via hole penetrating the second sub-passivation layer, and the second end of the connecting electrode is electrically connected to the second semiconductor portion of another sub-light-emitting unit portion through a fourth via hole penetrating the second sub-passivation layer.

11. The light emitting assembly according to claim 9, wherein: The protection portion is in contact with the passivation layer.

12. The light emitting assembly according to claim 9, wherein: The first semiconductor layer is located on a side of the light-emitting layer close to the drive substrate, the first semiconductor layer further includes a first redundant portion spaced apart from the first semiconductor portion, and the light-emitting layer further includes a second redundant portion spaced apart from the light-emitting portion; The first redundant portion has a fifth via hole, and the second redundant portion has a sixth via hole, the fifth via hole and the sixth via hole both surround the second via hole, and the passivation layer is filled between a sidewall of the fifth via hole and a sidewall of the second via hole, and between a sidewall of the sixth via hole and a sidewall of the second via hole; The orthographic projection of the fourth electrode on the driving substrate overlaps with the orthographic projections of the first redundant portion and the second redundant portion on the driving substrate.

13. The light emitting assembly according to claim 7, wherein: The first semiconductor layer is located on a side of the light-emitting layer close to the drive substrate, the first semiconductor layer further includes a third redundant portion spaced apart from the first semiconductor portion, and the light-emitting layer further includes a fourth redundant portion spaced apart from the light-emitting portion; The orthographic projection of the third electrode on the driving substrate overlaps with the orthographic projections of the third redundant portion and the fourth redundant portion on the driving substrate.

14. The light emitting assembly according to any one of claims 1 to 6, wherein: The solder portion connected to each electrode is surrounded by the protection portion, and the protection portions corresponding to different solder portions are arranged at intervals.

15. The light emitting assembly according to any one of claims 1 to 6, wherein: There are multiple light-emitting units, and the light-emitting component further includes: a color conversion unit provided on the light-emitting side of the multiple light-emitting units, and a first substrate located on a side of the color conversion unit away from the multiple light-emitting units; The color conversion unit includes: A defining dam layer, wherein the defining dam layer has a plurality of opening areas; the opening areas correspond one to one with the light emitting units; a plurality of optically functional portions, each of which is located inside the opening area and corresponds to the opening area in a one-to-one manner, and at least some of the optically functional portions are used to convert the color of light entering the optically functional portion; A first encapsulation layer is located on a side of the definition dam layer facing away from the first substrate.

16. The light emitting assembly according to claim 15, wherein: The color conversion unit further includes: A light shielding layer is located between the first substrate and the definition dam layer, and the light shielding layer includes a plurality of light-through holes, the plurality of opening areas being arranged in a one-to-one correspondence with the plurality of light-through holes, and an orthographic projection of the light-through holes on the first substrate and an orthographic projection of the opening areas on the first substrate overlapping; a filter unit located between the first substrate and the optical functional portion, wherein an orthographic projection of the filter unit on the first substrate overlaps with an orthographic projection of a corresponding light-through hole on the first substrate; The filter units are arranged in a one-to-one correspondence with the optical functional parts, and the orthographic projections of the filter units on the first substrate overlap with the orthographic projections of the corresponding optical functional parts on the first substrate.

17. The light emitting assembly according to claim 16, wherein: The light emitted by the light emitting unit is blue light or ultraviolet light; The optical functional part includes: a first functional part for converting the light emitted by the light emitting unit into red light; a second functional part for converting the light emitted by the light emitting unit into green light; and a third functional part for converting the light emitted by the light emitting unit into blue light or maintaining the blue light state; The plurality of filter units are arranged in a one-to-one correspondence with the plurality of light holes; The multiple filter units include: a first filter unit arranged corresponding to the first functional part, the first filter unit is a red color block or a red-green-transparent and blue-reflecting filter film; a second filter unit arranged corresponding to the second functional part, the second filter unit is a green color block or a red-green-transparent and blue-reflecting filter film; a third filter unit arranged corresponding to the third functional part, the third filter unit is a blue color block or a transparent layer.

18. The light emitting assembly according to any one of claims 1 to 17, wherein: The driving substrate includes a base and a first driving circuit layer located on the base, wherein the first driving circuit layer is electrically connected to the first conducting pad; The driving substrate further includes a fifth electrode, at least a portion of which is located on the substrate. On a side of the bottom facing away from the light-emitting unit, the fifth electrode is electrically connected to the first driving circuit layer via a conductive structure penetrating the substrate.

19. The light emitting assembly according to any one of claims 1 to 6, wherein: The light emitting component is a display substrate, and the light emitting unit array is arranged on the driving substrate; The driving substrate has a second driving circuit layer, and the second driving circuit layer is electrically connected to the first conducting pad and is used to provide a first driving signal to the first driving circuit layer.

20. The light emitting assembly according to any one of claims 1 to 19, wherein: The light emitting component further comprises: A color conversion unit provided on the light-emitting side of the light-emitting unit; a buffer layer, the buffer layer being located between the light-emitting unit and the color conversion unit; A bonding adhesive layer, at least a portion of which is located between the buffer layer and the color conversion unit.

21. The light emitting assembly according to any one of claims 1 to 20, wherein: The light-emitting assembly further includes a light-shielding wall, which surrounds each light-emitting unit in the light-emitting assembly; The light emitting unit comprises a first semiconductor layer, a light emitting layer and a second semiconductor layer which are stacked, wherein the second semiconductor layer is located on the light emitting side of the light emitting layer; The light-emitting layer has a first surface facing the driving substrate and a second surface away from the driving substrate, the light-shielding wall is close to a third surface of the driving substrate and away from a fourth surface of the driving substrate, and a distance from the third surface to the base of the driving substrate is less than or equal to a distance from the first surface to the base; A distance from the fourth substrate to the base is greater than or equal to a distance from the second surface to the base.

22. The light emitting assembly according to claim 21, wherein: The light emitting assembly further includes: a color conversion unit disposed on the light emitting side of the light emitting unit; The light shielding wall is arranged on a surface of the color conversion unit facing the driving substrate.

23. The light emitting assembly according to claim 22, wherein: A third enclosed space for accommodating the light-emitting unit is formed between the light-shielding wall, the color conversion unit and the driving substrate.

24. The light emitting assembly according to claim 21, wherein The light shielding wall includes a bottom surface facing the driving substrate, a top surface facing away from the driving substrate, and side surfaces connected between the top surface and the bottom surface, wherein the top surface and the side surfaces form an obtuse angle.

25. The light emitting assembly according to claim 24, wherein: The obtuse angle is between 120° and 135°.

26. A display substrate comprising a carrying backplane and a plurality of light-emitting components according to claim 18, wherein the plurality of light-emitting components are arranged in an array on the carrying backplane; The carrying back plate includes a third driving circuit layer and a plurality of second conductive pads, and the fifth electrode is electrically connected to the second conductive pads; The third driving circuit layer is electrically connected to the second conducting pad and is used to provide a second driving signal to the first driving circuit layer.

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