Optoelectronic device

Abstract

An optoelectronic device comprises an optical component. The optical component comprises an entrance side. The entrance side comprises a first segment and a second segment. The first segment and the second segment are arranged at an angle to each other. The optoelectronic device comprises a first laser diode chip adapted for emitting a first laser beam towards the first segment. The entrance side of the optical component is oriented towards the first laser diode chip.

Description

[0001] OPTOELECTRONIC DEVICE

[0002] DESCRIPTION

[0003] The present invention relates to an optoelectronic device .

[0004] This patent application claims the priority of German patent application 10 2024 102 901 . 3 , the disclosure content of which is hereby incorporated by reference .

[0005] Optoelectronic devices comprising laser diode chips are known in the state of the art as illuminators for sensing applications . Such optoelectronic devices may comprise optical components for extending the field of illumination .

[0006] It is an obj ect of the present invention to provide an optoelectronic device . This obj ective is achieved by an optoelectronic device according to the independent claim . Various variants are disclosed in the dependent claims .

[0007] An optoelectronic device comprises an optical component . The optical component comprises an entrance side . The entrance side comprises a first segment and a second segment . The first segment and the second segment are arranged at an angle to each other . The optoelectronic device comprises a first laser diode chip adapted for emitting a first laser beam towards the first segment . The entrance side of the optical component is oriented towards the first laser diode chip .

[0008] The optical component of this optoelectronic device may be adapted for creating a wide field of illumination . This may be supported by the entrance side of the optical component having segments arranged at an angle to each other .

[0009] In a variant of the optoelectronic device , the first laser diode chip is a VCSEL . In this case , the first laser diode chip may comprise a small footprint and a high output power . In a variant of the optoelectronic device , the first laser diode chip comprises a two-dimensional matrix of emitters adapted for emitting a plurality of first laser beams . This allows the first laser diode chip to emit light having a large output power .

[0010] In a variant of the optoelectronic device , the entrance side comprises a third segment . The first segment is arranged between the second segment and the third segment . The first segment and the third segment are arranged at an angle to each other . This allows the optical component of the optoelectronic device to create an even wider field of i llumination .

[0011] A variant of the optoelectronic device comprises a second laser diode chip adapted for emitting a second laser beam . An emission face of the first laser diode chip and an emission face of the second laser diode chip are oriented at an angle to each other . The emission face of the first laser diode chip is oriented towards the first segment and the emission face of the second laser diode chip is oriented towards the second segment . This allows the first laser diode chip and the second laser diode chip to direct their laser beams towards the segments of the entrance side of the optical component in a way that prevents an occurrence of total internal reflection in the optical component .

[0012] In a variant of the optoelectronic device , the second laser diode chip is mounted on a surface of a substrate with a glue . The glue is arranged such that the second laser diode chip is arranged at an angle with respect to the surface . This arrangement allows the emission face of the second laser diode chip to be oriented at an angle with respect to the emission face of the first laser diode chip such that the emission face of the second laser diode chip is oriented towards the second segment . Advantageously, this arrangement can be produced in a simple and reliable manner . A variant of the optoelectronic device comprises a substrate . A surface of the substrate comprises a first section and a second section . The first section and the second section are arranged at an angle to each other . The first laser diode chip is arranged on the first section and the second laser diode chip is arranged on the second section . Advantageously, this arrangement allows the emission face of the second laser diode chip to be oriented at an angle with respect to the emission face of the first laser diode chip such that the emission face of the first laser diode chip is oriented towards the first segment and the emission face of the second laser diode chip is oriented towards the second segment of the entrance side of the optical component . Advantageously, this arrangement can be fabricated in a simple , precise , and cost-ef fective manner .

[0013] A variant of the optoelectronic device comprises a second laser diode chip adapted for emitting a second laser beam . This variant of the optoelectronic device further compri ses an optical element arranged in a beam path of the second laser beam . The optical element is adapted for redirecting the second laser beam towards the second segment . Advantageously, the optical element allows for redirecting the second laser beam towards the second segment which is arranged at an angle with respect to the first segment of the entrance s ide of the optical component without requiring the emission face of the second laser diode chip to be arranged at an angle .

[0014] In a variant of the optoelectronic device , the optical element comprises a prism or an optical lens . Advantageously, such optical elements are well suited for redirecting the second laser beam towards the second segment .

[0015] In a variant of the optoelectronic device , the optical element comprises a volume phase hologram . Advantageously, such an optical element is well suited for redirecting the second laser beam of the second laser diode chip towards the second segment of the entrance side of the optical component . In a variant of the optoelectronic device , the optical element comprises a reflector . This provides another alternative for redirecting the second laser beam towards the second segment .

[0016] In a variant of the optoelectronic device , the second laser diode chip is an edge emitting laser diode chip . Advantageously, the second laser beam emitted by the second laser diode chip can be reflected towards the second segment by the optical element .

[0017] In a variant of the optoelectronic device , the first laser diode chip is adapted for emitting a second laser beam towards an optical element . The optical element is adapted for redirecting the second laser beam towards the second segment . In this variant of the optoelectronic device , the f irst laser diode chip is adapted for emitting at least two laser beams that are directed towards the first segment and the second segment of the entrance side of the optical component .

[0018] In a variant of the optoelectronic device , the optical element comprises a reflector . This provides a particularly simple arrangement for redirecting the second laser beam towards the second segment .

[0019] In a variant of the optoelectronic device , the first laser diode chip is arranged on a substrate . The optical element is formed as a coating on a surface of the substrate . Advantageously, this arrangement can be produced in a simple, reliable , and cost-ef fective manner .

[0020] The above-described properties , features , and advantages of the invention, as well as the way in which they are achieved, will become more clearly and comprehensively understandable in connection with the following description of exemplary variants , which will be explained in more detail in connection with the drawings in which, in schematic representation : Fig . 1 shows a first variant of an optoelectronic device ;

[0021] Fig . 2 shows a second variant of the optoelectronic device ;

[0022] Fig . 3 shows a third variant of the optoelectronic device ;

[0023] Fig . 4 shows a fourth variant of the optoelectronic device ;

[0024] Fig . 5 shows a fi fth variant of the optoelectronic device ;

[0025] Fig . 6 shows a sixth variant of the optoelectronic device ;

[0026] Fig . 7 shows a seventh variant of the optoelectronic device ; and

[0027] Fig . 8 shows a top view of the seventh variant of the optoelectronic device .

[0028] Fig . 1 shows a schematic sectional view of a first variant of an optoelectronic device 10 . The optoelectronic device 10 may serve to illuminate an environment , for example a passenger compartment of a motor vehicle . The illumination may serve to support a sensing or detection application such as an in- cabin-sensing, a driver position detection, a face direction recognition, a body pose estimation, or a simultaneous localisation and mapping ( SLAM) . The optoelectronic device 10 may provide a wide field of illumination to cover a large area of the environment with the illumination .

[0029] The optoelectronic device 10 comprises an optical component 100 having an entrance side 101 and an exit side 102 that is opposed to the entrance side 101 . The optical component 100 comprises an optically transparent material such as an epoxy material or another plastic material or a glass .

[0030] Light , such as visible light or infrared light , can enter the optical component 100 on the entrance side 101 and can leave the optical component 100 on the exit side 102 . Between the entrance side 101 and the exit side 102 , the light is redirected by the optical component 100 .

[0031] The entrance side 101 of the optical component 100 is divided into a first segment 110 , a second segment 120 and a third segment 130 . The first segment 110 is arranged between the second segment 120 and the third segment 130 . The f irst segment 110 and the second segment 120 are arranged at a first angle 125 to each other . The first segment 110 and the third segment 130 are arranged at a second angle 135 to each other . In this way, the second segment 120 and the third segment 130 are oriented towards each other and are arranged at an angle of less than 180 ° . In result , the entrance side 101 of the optical component 100 is concave . The first angle 125 and the second angle 135 may conveniently comprise the same absolute value between 0 ° and 90 ° .

[0032] The entrance side 101 of the optical component 100 comprises a plurality of microlenses 140 . The microlenses 140 may be arranged in a two-dimensional array, for example . The microlenses 140 may be randomised such that di f ferent microlenses 140 comprise di f ferent heights , si zes , or shapes . The microlenses 140 are arranged on the first segment 110 , the second segment 120 and the third segment 130 of the entrance side 101 .

[0033] The optoelectronic device 10 further comprises a substrate 200 having a surface 201 . The optoelectronic device 10 also comprises a frame 300 . The frame 300 connects the optical component 100 to the substrate 200 such that the optical component 100 and the substrate 200 are spaced apart from each other and the entrance side 101 of the optical component 100 is oriented towards the surface 201 of the substrate 200 .

[0034] The substrate 200 may be a printed circuit board ( PCB) , a ceramic substrate or a molded substrate , for example . The frame 300 may comprise a plastic material , for example . The optoelectronic device 10 comprises a first laser diode chip 400 , a second laser diode chip 500 and a third laser diode chip 600 . The first laser diode chip 400 , the second laser diode chip 500 and the third laser diode chip 600 are arranged on the surface 201 of the substrate 200 . Consequently, the entrance side 101 of the optical component 100 is oriented towards the first laser diode chip 400 , the second laser diode chip 500 and the third laser diode chip 600 .

[0035] The first laser diode chip 400 comprises an emission face 410 that is oriented towards the entrance side 101 of the optical component 100 and is parallel to the first segment 110 of the entrance side 101 . The first laser diode chip 400 i s adapted for emitting a first laser beam 420 towards the first segment 110 of the entrance side 101 of the optical component 100 .

[0036] The first laser beam 420 is emitted in a direction perpendicular to the emission face 410 and perpendicular to the first segment 110 of the entrance side 101 of the optical component 100 . The first laser diode chip 400 may be a VCSEL, for example .

[0037] The first laser diode chip 400 may comprise a plurality of emitters for emitting a plurality of first laser beams 420 . In this case , all first laser beams 420 are emitted parallel to each other . The emitters may be arranged in a onedimensional or a two-dimensional matrix at the emis sion face 410 , for example . It may be possible to address all emitters or groups of emitters individually such that individual first laser beams 420 may be switched on and of f independently from each other .

[0038] The second laser diode chip 500 comprises an emission face 510 that is oriented towards the entrance side 101 of the optical component 100 . The emission face 510 is arranged at an angle 530 with respect to the emission face 410 of the first laser diode chip 400 such that the emission face 510 of the second laser diode chip 500 is more parallel to the second segment 120 of the entrance side 101 of the optical component 100 than the emission face 410 of the first laser diode chip 400 . The angle 530 may comprise the same absolute value as the first angle 125 , such that the emission face 510 of the second laser diode chip 500 is entirely parallel to the second segment 120 , but this is not strictly necessary . The angle 530 may be smaller than the first angle 125 or may even be larger than the first angle 125 .

[0039] The second laser diode chip 500 is adapted for emitting a second laser beam 520 on its emission face 510 in a direction perpendicular to the emission face 510 such that the second laser beam 520 is emitted towards the second segment 120 of the entrance side 101 of the optical component 100 . Exactly as described above for the first laser diode chip 400 , the second laser diode chip 500 may be adapted for emitting a plurality of second laser beams 520 .

[0040] The third laser diode chip 600 comprises an emission face 610 that is oriented towards the entrance side 101 of the optical component 100 . The emission face 610 is arranged at an angle 630 with respect to the emission face 410 of the first laser diode chip 400 such that the emission face 610 of the third laser diode chip 600 is turned to be more parallel to the third segment 130 of the entrance side 101 of the optical component 100 . The angle 630 may comprise the same absolute value as the second angle 135 , such that the emission face 610 of the third laser diode chip 600 is entirely parallel to the third segment 130 , but this is not strictly necessary .

[0041] The angle 630 may be smaller than the first angle 135 or may even be larger than the first angle 135 .

[0042] The third laser diode chip 600 is adapted for emitting a third laser beam 620 on its emission face 610 in a direction perpendicular to the emission face 610 such that the third laser beam 620 is emitted towards the third segment 130 of the entrance side 101 of the optical component 100 . Exactly as described above for the first laser diode chip 400 , the third laser diode chip 600 may be adapted for emitting a plurality of third laser beams 620 .

[0043] The first laser diode chip 400 , the second laser diode chip 500 and the third laser diode chip 600 are mounted on the surface 201 of the substrate 200 with a glue 250 . The glue 250 may only serve to fixate the laser diode chips 400 , 500 , 600 on the surface 201 of the substrate 200 or may also serve to provide an electrical connection between the substrate 200 and the laser diode chips 400 , 500 , 600 .

[0044] The first laser diode chip 400 is mounted on the surface 201 of the substrate 200 such that the emission face 410 of the first laser diode chip 400 is parallel to the surface 201 of the substrate 200 .

[0045] Below the second laser diode chip 500 , the glue 250 is arranged such that the second laser diode chip 500 is arranged at the angle 530 with respect to the surface 201 of the substrate 200 such that the emission face 510 of the second laser diode chip 500 is oriented at the angle 530 with respect to the emission face 410 of the first laser diode chip 400 . To this end, the glue 250 may comprise a higher thickness on one side of the second laser diode chip 500 than on the opposite side of the second laser diode chip 500 .

[0046] In the same way, the glue 250 is arranged below the third laser diode chip 600 such that the emission face 610 is arranged at the angle 630 with respect to the emission face 410 of the first laser diode chip 400 and the surface 201 of the substrate 200 .

[0047] In the following, other variants of the optoelectronic device 10 will be described . These variants are similar to the variant shown in Fig . 1 and the description of the first variant of the optoelectronic device 10 also applies to the other variants of the optoelectronic device 10 , with the exception of the di f ferences described in the following . In particular, the optical component 100 is identical in all variants of the optoelectronic device 10 .

[0048] Fig . 2 shows a schematic sectional view of a second variant of the optoelectronic device 10 . In this variant , the surface 201 of the substrate 200 comprises a first section 210 , a second section 220 , and a third section 230 . The second section 220 forms the angle 530 with the first section 210 . The third section 230 forms the angle 630 with the first section 210 .

[0049] The first laser diode chip 400 is arranged on the f irst section 210 such that the emission face 410 of the first laser diode chip 400 is parallel to the first section 210 . The second laser diode chip 500 is arranged on the second section 220 such that the emission face 510 of the second laser diode chip 500 is parallel to the second section 220 of the substrate 200 . The third laser diode chip 600 is arranged on the third section 230 such that the emission face 610 o f the third laser diode chip 600 is parallel to the third section 230 of the surface 201 of the substrate 200 .

[0050] In this way, unlike the first variant of the optoelectronic device 10 , the angles 530 , 630 are formed by the angled arrangement of the sections 210 , 220 , 230 of the surface 201 of the substrate 200 .

[0051] The structured surface 201 of the substrate 200 may be formed by laser structuring, for example . The substrate 200 may comprise FR4 , a ceramic material , a liquid crystal polymer ( LCP ) or may be formed as a 3D molded interconnect device (MID) or a PCB, for example .

[0052] Fig . 3 shows a schematic sectional view of a third variant of the optoelectronic device 10 . Fig . 4 shows a schematic sectional view of a fourth variant of the optoelectronic device 10 . Fig . 5 shows a schematic sectional view of a fi fth variant of the optoelectronic device 10 . Unlike the first variant and the second variant , in these variants , the first laser diode chip 400 , the second laser diode chip 500 and the third laser diode chip 600 are arranged on the surface 201 of the substrate 200 such that the emission face 410 of the first laser diode chip 400 , the emission face 510 of the second laser diode chip 500 and the emission face 610 of the third laser diode chip 600 are parallel to each other .

[0053] In each of the third variant , the fourth variant and the fi fth variant , an optical element 700 is arranged in a beam path 525 of the second laser beam 520 emitted by the second laser diode chip 500 . The optical element 700 is adapted for redirecting the second laser beam 520 as a redirected second laser beam 521 towards the second segment 120 of the entrance side 101 of the optical component 100 .

[0054] Accordingly, a further optical element 700 or a further section of the same optical element 700 is arranged in a beam path of the third laser beam 620 emitted by the third laser diode chip 600 and adapted for redirecting the third laser beam 620 as a redirected third laser beam 621 towards the third segment 130 of the entrance side 101 of the optical component 100 .

[0055] In the third variant of the optoelectronic device 10 depicted in Fig . 3 , the optical element 700 comprises a prism 710 for redirecting the second laser beam 520 towards the second segment 120 of the entrance side 101 of the optical component 100 . The prism 710 is arranged on a carrier 750 in this example . In this variant , the optical element 700 may be formed as a wafer-level optical element .

[0056] In the fourth variant of the optoelectronic device 10 depicted in Fig . 4 , the optical element 700 comprises an optical lens 720 arranged on a carrier 750 . Also in this example , the optical element 700 may be formed as a wafer-level optical element . In the fi fth variant of the optoelectronic device 10 depicted in Fig . 5 , the optical element 700 comprises a volume phase hologram 730 arranged between the laser diode chips 400 , 500 , 600 and the entrance side 101 of the optical component 100 .

[0057] Fig . 6 shows a schematic sectional view of a sixth variant of the optoelectronic device 10 . The sixth variant of the optoelectronic device 10 is di f ferent from all previous variants of the optoelectronic device 10 in that the second laser diode chip 500 and the third laser diode chip 600 are arranged such that the second laser beam 520 and the third laser beam 620 are emitted in a direction parallel to the surface 201 of the substrate 200 . To this end, the second laser diode chip 500 and the third laser diode chip 600 may be edge-emitting laser diode chips in this variant of the optoelectronic device 10 .

[0058] As in the variant of the optoelectronic device 10 shown in Figs . 3 , 4 and 5 , an optical element 700 is arranged in the beam path 525 of the second laser beam 520 to redirect the second laser beam 520 as the redirected second laser beam 521 towards the second segment 120 of the entrance side 101 of the optical component 100 . Accordingly, a further optical element 700 is arranged in the beam path of the third laser beam 620 for redirecting the third laser beam 620 as the redirected third laser beam 621 towards the third segment 130 of the entrance side 101 of the optical component 100 . In the sixth variant of the optoelectronic device 10 , each optical element 700 comprises a reflector 740 .

[0059] Fig . 7 shows a schematic sectional view of a seventh variant of the optoelectronic device 10 . Fig . 8 shows a schematic top view of the seventh variant of the optoelectronic device 10 . The optical component 100 is not shown in Fig . 8 .

[0060] The seventh variant of the optoelectronic device 10 comprises only the first laser diode chip 400 but not the second laser diode chip 500 and the third laser diode chip 600 . As in all previous variants of the optoelectronic device 10 , the first laser diode chip 400 is adapted for emitting the first laser beam 420 at its emission face 410 towards the first segment 110 of the entrance side 101 of the optical component 100 .

[0061] In the seventh variant of the optoelectronic device 10 , the first laser diode chip 400 comprises a further emis sion face 415 that is opposed to the emission face 410 . The f irst laser diode chip 400 is adapted for emitting a second laser beam 430 , or a plurality of second laser beams 430 , at the further emission face 415 towards an optical element 800 . To this end, the first laser diode chip 400 is arranged on a raised carrier portion 260 of the substrate 200 that leaves at least parts of the further emission face 415 uncovered . An emission direction of the second laser beam 430 is antiparal lel to the emission direction of the first laser beam 420 .

[0062] The optical element 800 is adapted for redirecting a part of the second laser beam 430 towards the second segment 120 of the entrance side 101 of the optical component 100 . In the example depicted in Figs . 7 and 8 , the optical element 800 comprises a reflector . A part of the one or more second laser beams 430 is redirected towards the second segment 120 as a first reflected portion 431 . Another part of the one or more second laser beams 430 is redirected towards the third segment 130 of the entrance side 101 of the optical component 100 as a second reflected portion 432 . To this end, the optical element 800 comprises several reflecting surfaces arranged at an angle to each other .

[0063] In the example depicted in Figs . 7 and 8 , the optical element 800 is formed as a coating on a part of the surface 201 of the substrate 200 arranged below the carrier portion 260 and the first laser diode chip 400 . The reflective surfaces may comprise a flat shape or a curved shape to further shape the first reflected portion 431 and the second reflected portion 432 of the second laser beam 430 . The invention has been illustrated and described in more detail with the aid of exemplary variants . The invention is not , however, restricted to the examples disclosed . Rather, other variants may be derived therefrom by the person skilled in the art .

[0064] REFERENCE SYMBOLS optoelectronic device optical component entrance side exit side first segment second segment first angle third segment second angle microlens substrate surface first section second section third section glue carrier portion frame first laser diode chip emission face further emission face first laser beam second laser beam first reflected portion second reflected portion second laser diode chip emission face second laser beam redirected second laser beam beam path angle 600 third laser diode chip

[0065] 610 emission face

[0066] 620 third laser beam 621 redirected third laser beam

[0067] 630 angle

[0068] 700 optical element

[0069] 710 prism 720 optical lens

[0070] 730 volume phase hologram

[0071] 740 reflector

[0072] 750 carrier 800 optical element

Claims

CLAIMS1. An optoelectronic device (10) comprising an optical component (100) , wherein the optical component (100) comprises an entrance side ( 101 ) , wherein the entrance side (101) comprises a first segment (110) and a second segment (120) , wherein the first segment (110) and the second segment (120) are arranged at an angle (125) to each other, and comprising a first laser diode chip (400) adapted for emitting a first laser beam (420) towards the first segment (110) , wherein the entrance side (101) of the optical component (100) is oriented towards the first laser diode chip (400) .

2. The optoelectronic device (10) according to claim 1, wherein the first laser diode chip (400) is a VCSEL.

3. The optoelectronic device (10) according to claim 2, wherein the first laser diode chip (400) comprises a two- dimensional matrix of emitters adapted for emitting a plurality of first laser beams (420) .

4. The optoelectronic device (10) according to any one of the previous claims, wherein the entrance side (101) comprises a third segment (130) , wherein the first segment (110) is arranged between the second segment (120) and the third segment (130) , wherein the first segment (110) and the third segment (130) are arranged at an angle (135) to each other.

5. The optoelectronic device (10) according to any one of the previous claims, comprising a second laser diode chip (500) adapted for emitting a second laser beam (520) ,wherein an emission face (410) of the first laser diode chip (400) and an emission face (510) of the second laser diode chip (500) are oriented at an angle (530) to each other, wherein the emission face (410) of the first laser diode chip (400) is oriented towards the first segment (110) and the emission face (510) of the second laser diode chip (500) is oriented towards the second segment (120) .

6. The optoelectronic device (10) according to claim 5, wherein the second laser diode chip (500) is mounted on a surface (201) of a substrate (200) with a glue (250) , wherein the glue (250) is arranged such that the second laser diode chip (500) is arranged at an angle (530) with respect to the surface (201) .

7. The optoelectronic device (10) according to claim 5, wherein the optoelectronic device (10) comprises a substrate (200) , wherein a surface (201) of the substrate (200) comprises a first section (210) and a second section (220) , wherein the first section (210) and the second section (220) are arranged at an angle to each other, wherein the first laser diode chip (400) is arranged on the first section (210) and the second laser diode chip (500) is arranged on the second section (220) .

8. The optoelectronic device (10) according to one of claims 1 to 4, comprising a second laser diode chip (500) adapted for emitting a second laser beam (520) , and comprising an optical element (700) arranged in a beam path (525) of the second laser beam (520) , wherein the optical element (700) is adapted for redirecting the second laser beam (520) towards the second segment (120) .

9. The optoelectronic device (10) according to claim 8, wherein the optical element (700) comprises a prism (710) or an optical lens (720) .

10. The optoelectronic device (10) according to claim 8, wherein the optical element (700) comprises a volume phase hologram (730) .

11. The optoelectronic device (10) according to claim 8, wherein the optical element (700) comprises a reflector (740) .

12. The optoelectronic device (10) according to claim 11, wherein the second laser diode chip (500) is an edge emitting laser diode chip.

13. The optoelectronic device (10) according to one of claims 1 to 4, wherein the first laser diode chip (400) is adapted for emitting a second laser beam (430) towards an optical element (800) , wherein the optical element (800) is adapted for redirecting the second laser beam (430) towards the second segment (120) .

14. The optoelectronic device (10) according to claim 13, wherein the optical element (800) comprises a reflector.

15. The optoelectronic device (10) according to one of claims 13 and 14, wherein the first laser diode chip (400) is arranged on a substrate (200) , wherein the optical element (800) is formed as a coating on a surface (201) of the substrate (200) .

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