Power semiconductor arrangement comprising a circuit carrier, a heat sink and an electronic circuit, and method for the production thereof

Abstract

The invention relates to a power semiconductor arrangement (2) having a circuit carrier (4), a heat sink (6) and at least one electronic circuit (8) which has at least one power semiconductor element (14) and at least one link circuit capacitor (16). In order to improve the switching behavior of a power semiconductor arrangement (2) while ensuring sufficient cooling, it is proposed that the electronic circuit (8) is connected to the circuit carrier (4) in a first region (22), wherein the heat sink (6) is connected to the circuit carrier (4) in a second region (24), which is horizontally spaced apart from the first region (22), wherein the circuit carrier (4) has a heat conduit (26) with a channel structure (28), in which a heat transfer fluid (30) is arranged, wherein at least one first channel (32) of the channel structure (28) is arranged in the first region (22) and at least one second channel (34) of the channel structure (28) is arranged in the second region (24), wherein the at least one first channel (32) is fluidically connected to the at least one second channel (34) such that the electronic circuit (8) is thermally conductively connected to the heat sink (6) via the heat conduit (26).

Description

[0001] Description

[0002] Power semiconductor arrangement with a circuit carrier, a heat sink and an electronic circuit and method for its production

[0003] The invention relates to a power semiconductor arrangement comprising a circuit carrier, a heat sink and at least one electronic circuit which has at least one power semiconductor element and at least one intermediate circuit capacitor.

[0004] Furthermore, the invention relates to a power converter with at least one such power semiconductor arrangement.

[0005] Furthermore, the invention relates to a method for producing a power semiconductor arrangement comprising a circuit carrier, a heat sink and at least one electronic circuit which has at least one power semiconductor element and at least one intermediate circuit capacitor.

[0006] Such a power semiconductor device is used, for example, in a power converter. A power converter can be understood as a rectifier, an inverter, a converter, or a DC-DC converter. Such power semiconductor devices are typically designed as power modules. The power semiconductor elements used in the power semiconductor device include transistors, triacs, thyristors, or diodes. Such transistors can be implemented as insulated-gate bipolar transistors (IGBTs) or wide-bandgap transistors, among others. Wide-bandgap transistors can be implemented using silicon carbide or gallium nitride technology, for example, and enable, among other things, higher switching frequencies.

[0007] The published patent application EP 3 958 306 A1 describes a power module with at least two power semiconductor devices contacted on a substrate, which are arranged in a housing.

[0008] A planar assembly and connection technology for electronic circuits not only leads to lower parasitic inductances of the power semiconductors, which enables higher switching frequencies, but also to increased power densities. The published patent application WO 2020 / 249479 A1 describes an electronic circuit with a first and a second circuit carrier and a first and a second semiconductor component. The first semiconductor component rests with an upper side against a lower side of the first circuit carrier and with an underside against a upper side of the second circuit carrier. The first circuit carrier has a first via, which connects the first semiconductor component to a first conductor track. The first circuit carrier has a second via, which electrically connects a connecting element arranged between the circuit carriers to another conductor track.

[0009] The published patent application EP 4 300 574 A1 describes a power module that can be populated, comprising a power substrate with a metallization, at least one switchable die with power terminals, an interposer and at least a first and a second contact element, wherein the contact elements each provide an electrical contact between one of the power terminals of the die and the interposer.

[0010] To ensure adequate cooling of an electronic circuit in a power semiconductor device, a heat sink is positioned as close as possible to the power semiconductor device. To achieve effective heat dissipation, a heat pipe can be used. This type of heat pipe, also called a heat pipe, typically contains a heat transfer fluid for two-phase cooling. The heat pipe can be designed as a heat pipe, pulsating heat pipe, or thermosiphon, among other things.

[0011] The published patent application WO 2022 / 214231 A1 describes a semiconductor module arrangement comprising a heat sink and at least one semiconductor module which is contacted on the heat sink.In order to enable more effective heat dissipation and more cost-effective production compared to the prior art, it is proposed that the heat sink comprises a heat sink base body and a heat sink attachment, wherein the heat sink attachment has a channel structure on a first surface in which a heat transfer fluid is arranged, wherein the heat sink base body has a heat sink base body surface, wherein the channel structure is hermetically sealed by a material connection with the heat sink base body surface of the heat sink base body, so that both the heat sink attachment and the heat sink base body are in direct contact with the heat transfer fluid, wherein a pulsating heat pipe is formed by the hermetically sealed channel structure and the heat transfer fluid, which is in a thermally conductive connection with the semiconductor module.

[0012] Published application WO 2021 / 099019 A1 describes an electronic module. The electronic module comprises a pulsating heat pipe with a channel structure in which a heat transfer medium is arranged, and at least one electrical component that is in direct contact with the heat transfer medium and / or is connected to an electrically conductive contact element that is in direct contact with the heat transfer medium.

[0013] Typically, intermediate circuit capacitors, which are typically electrolytic capacitors, are arranged further away from the power semiconductor array due to space constraints, making it difficult to achieve an optimal, low-inductance electrical connection between the intermediate circuit capacitors and the power semiconductor array. In particular, the distance between the power semiconductor array and the intermediate circuit capacitors results in a high commutation inductance, which adversely affects the switching behavior of the power semiconductor array.

[0014] Against this background, it is an object of the present invention to improve the switching behavior of a power semiconductor device while ensuring sufficient cooling.

[0015] This object is achieved according to the invention by a power semiconductor arrangement comprising a circuit carrier, a heat sink and at least one electronic circuit, which has at least one power semiconductor element and at least one intermediate circuit capacitor, wherein the electronic circuit is connected to a first region of the circuit carrier, wherein the heat sink is connected to a second region of the circuit carrier, which is arranged horizontally spaced from the first region, wherein the circuit carrier has a heat pipe with a channel structure in which a heat transport fluid is arranged, wherein in the first region of the circuit carrier at least one first channel of the channel structure and in the second region of the circuit carrier at least one second channel of the channel structure are arranged, wherein the at least one first channel is in fluidic connection with the at least one second channel,so that the electronic circuit is thermally conductively connected to the heat sink via the heat conduction. Furthermore, the object is achieved according to the invention by a power converter with at least one such power semiconductor arrangement.

[0016] Furthermore, the object is achieved according to the invention by a method for producing a power semiconductor arrangement comprising a circuit carrier, a heat sink and at least one electronic circuit which has at least one power semiconductor element and at least one intermediate circuit capacitor, wherein the electronic circuit is connected to the circuit carrier in a first region, wherein the heat sink is connected to the circuit carrier in a second region which is horizontally spaced from the first region, wherein the circuit carrier has a heat line with a channel structure in which a heat transport fluid is arranged, wherein at least one first channel of the channel structure is arranged in the first region and at least one second channel of the channel structure is arranged in the second region, wherein the at least one first channel is fluidically connected to the at least one second channel,so that the electronic circuit is thermally connected to the heat sink via heat conduction.

[0017] The advantages and preferred embodiments listed below with regard to the power semiconductor device can be transferred analogously to the power converter and the manufacturing method.

[0018] The invention is based on the idea of ​​improving the switching behavior of a power semiconductor arrangement by reducing the commutation inductance of an electronic circuit of the power semiconductor arrangement. The electronic circuit has at least one power semiconductor element and at least one intermediate circuit capacitor, which are connected on a circuit carrier. The circuit carrier can have, among other things, a substrate which comprises at least one dielectric material layer, in particular metallized on both sides. The circuit carrier can have a plurality of interconnected substrates. For example, the at least one power semiconductor element and the at least one intermediate circuit capacitor can be integrally connected, in particular by soldering and / or sintering, to a structured metallization of the substrate.The at least one power semiconductor element can comprise, among other things, an IGBT and / or a wide-bandgap transistor. A plurality of power semiconductor elements, which can in particular comprise transistors and diodes, can be interconnected to form an electronic circuit, for example, a half-bridge. During operation of the power semiconductor arrangement, heat loss generated in the electronic circuit is dissipated via a heat sink, which, for example, comprises a metallic heat sink.

[0019] To reduce the commutation inductance, the electronic circuit with the at least one power semiconductor element and the at least one intermediate circuit capacitor is connected to the circuit carrier in a first region, so that the smallest possible distance is achieved between the at least one power semiconductor element and the at least one intermediate circuit capacitor. In this way, an optimal low-inductance electrical connection of the intermediate circuit capacitors to the power semiconductor arrangement is achieved. Since the at least one intermediate circuit capacitor, which is designed, for example, as an electrolytic capacitor, requires a comparatively large installation space, the heat sink is connected to the circuit carrier in a second region, which is spaced horizontally from the first region, i.e. in the direction of a surface of the circuit carrier.In particular, such an arrangement allows a distance between the at least one power semiconductor element and the at least one intermediate circuit capacitor to be significantly smaller than a distance of the heat sink to the at least one power semiconductor element or to the at least one intermediate circuit capacitor.

[0020] In order to nevertheless ensure sufficient cooling, the circuit carrier has a heat pipe via which the electronic circuit is thermally conductively connected to the heat sink. The heat pipe, also called a heat pipe, has a channel structure in which a heat transport fluid is arranged. In particular, the heat transport fluid arranged in the channel structure is configured for two-phase cooling of the electronic circuit due to its thermal conductivity and boiling point. The heat pipe can be designed, among other things, as a heat pipe, pulsating heat pipe or thermosiphon. At least one first channel of the channel structure is arranged in the first region and at least one second channel of the channel structure is arranged in the second region, wherein the at least one first channel is in fluid communication with the at least one second channel.Such an arrangement with reduced commutation inductance improves the switching behavior of the electronic circuit, while thermal conduction ensures heat dissipation.

[0021] A further embodiment provides that the circuit carrier has a printed circuit board with a first surface and a second surface arranged on a side opposite the first surface, wherein the heat pipe is connected flatly to a surface of the printed circuit board. For example, the channel structure is introduced into the base body of the heat pipe and is closed in a fluid-tight manner by the, in particular substantially flat, first surface of the printed circuit board. Alternatively, the channel structure can be arranged, in particular completely, extending within the base body, wherein the base body is connected over its entire surface to the first surface of the printed circuit board, for example by adhesion. Such an arrangement ensures reliable and efficient heat dissipation.

[0022] A further embodiment provides that the heat pipe is arranged between the circuit board and the at least one intermediate circuit capacitor, wherein the at least one intermediate circuit capacitor has connections, in particular realized using through-hole technology, which are arranged running through the heat pipe and are connected, in particular in a materially bonded manner, to the circuit board. Such a materially bonded connection of the intermediate circuit capacitor to the circuit board can be established, among other things, by soldering. By arranging the heat pipe between the circuit board and the at least one intermediate circuit capacitor, any waste heat generated in the at least one intermediate circuit capacitor is efficiently dissipated via the heat pipe, while a reliable connection to the circuit board is ensured.

[0023] A further embodiment provides that the terminals of at least one intermediate circuit capacitor are in direct contact with the heat transfer fluid of the heat pipe. This reduces the thermal resistance and improves heat dissipation from the at least one intermediate circuit capacitor to the heat sink.

[0024] A further embodiment provides that the heat sink and the at least one intermediate circuit capacitor are arranged on the same surface of the circuit carrier. Both the heat sink and the at least one intermediate circuit capacitor require a large amount of space, particularly compared to the other components on the circuit carrier, and particularly in the vertical direction. Such an arrangement of the same surface of the circuit carrier enables flexible and compact positioning of the other components, which further reduces parasitic inductances. A further embodiment provides that the heat sink is in direct contact with the heat transfer fluid of the heat pipe. This reduces the thermal resistance and improves heat dissipation to the heat sink.

[0025] A further embodiment provides that the at least one second channel of the channel structure is arranged in the second region, extending at least partially through the heat sink. In particular, the heat sink is designed as a metallic heat sink, into which the at least one second channel is at least partially incorporated. The insertion can be carried out, among other things, by means of a machining process, e.g., milling. A channel extending at least partially through the heat sink, in particular the metallic heat sink, achieves improved heat dissipation.

[0026] A further embodiment provides that the heat sink is made of a first metallic material and, at least adjacent to the second channel of the channel structure, comprises a second metallic material that has a higher thermal conductivity than the first metallic material. For example, the heat sink, designed as a heat sink, is made of an aluminum alloy, with the coating being made of copper or a copper alloy. The higher conductivity of the copper improves heat dissipation.

[0027] A further embodiment provides that the heat conductor has a base body, at least in the first region, wherein the base body is made at least partially of a dielectric material. The dielectric or electrically non-conductive material can contain, among other things, a polymer or a ceramic material. A ceramic material enables an electrically insulating design of the base body with good thermal properties. Particularly when using vertical power semiconductor elements, such as IGBTs, a base body made at least partially of a dielectric material, which creates an electrically insulating and thermally conductive connection to the heat sink, is advantageous.

[0028] A further embodiment provides that the circuit carrier has a metal core arranged in a cavity, wherein at least one power semiconductor element is integrally connected to the metal core. Such a metal core can be made, among other things, from copper or a copper alloy. In particular, the metal core completely fills the cavity and is essentially flush with the surface of the circuit carrier. Such a metal core is a heat capacity arranged between the at least one power semiconductor element and the heat pipe, which helps bridge the start-up time of a pulsating heat pipe during a cold start of the power semiconductor arrangement. Such a cavity can run partially or completely through the circuit carrier.A cavity extending completely through the circuit carrier, which can be called a recess, can be filled with a metal core, for example, a metal insert, particularly a "copper coin." A cavity extending partially through the circuit carrier can be filled with, among other things, embedded thick copper structures. Furthermore, the metal core ensures heat dissipation.

[0029] Another embodiment provides for the metal core to be in direct contact with the heat transfer fluid of the heat conductor. In particular, the metal core is in direct contact with the heat transfer fluid on a side facing away from the power semiconductor element, thereby achieving improved heat dissipation.

[0030] A further embodiment provides that at least one power semiconductor element is designed as a vertical power semiconductor element and is integrally connected to the circuit carrier by means of planar assembly and connection technology. A vertical power semiconductor element has a first and a second load terminal, wherein the power semiconductor element is designed to conduct a load current along a vertical direction between the first and the second load terminal. A vertical power semiconductor element can be, among other things, an IGBT or a vertical SiC-MOSFET. Planar assembly and connection technology is characterized by the elimination of special technologies required for conventional assembly and connection technology, such as wire bonding. The load terminals of the vertical power semiconductor element are connected on both sides with planar connecting means, e.g.contacted with a substrate, in particular a printed circuit board (PCB) and / or a DCB (Direct Copper Bonded) substrate. The use of planar assembly and connection technology results in improved reliability and an extended service life.

[0031] A further embodiment provides for at least one power semiconductor element to be arranged on a surface between at least two intermediate circuit capacitors. If the at least one power semiconductor element is arranged horizontally on a surface between the at least two intermediate circuit capacitors, shorter supply lines and thus a lower commutation inductance are achieved. The invention is described and explained in more detail below with reference to the exemplary embodiments illustrated in the figures.

[0032] They show:

[0033] FIG 1 is a schematic sectional view of a first embodiment of a power semiconductor device,

[0034] FIG 2 shows a schematic sectional view of a second embodiment of a power semiconductor arrangement,

[0035] FIG 3 is a schematic sectional view of a third embodiment of a power semiconductor device,

[0036] FIG 4 is an enlarged schematic sectional view of a fourth embodiment of a power semiconductor device,

[0037] FIG 5 is an enlarged schematic sectional view of a fifth embodiment of a power semiconductor device,

[0038] FIG 6 is a schematic sectional view of a sixth embodiment of a power semiconductor device,

[0039] FIG 7 is a schematic representation of a section of a heat pipe,

[0040] FIG 8 is a schematic representation of an injection molding process for producing a base body part,

[0041] FIG 9 is an enlarged schematic sectional view of a sixth embodiment of a power semiconductor device,

[0042] FIG 10 is an enlarged schematic sectional view of a seventh embodiment of a power semiconductor arrangement, FIG 11 is a schematic sectional view of an eighth embodiment of the power semiconductor arrangement in a plan view,

[0043] FIG 12 is an enlarged schematic sectional view of a ninth embodiment of a power semiconductor device,

[0044] FIG 13 is a schematic sectional view of a ninth embodiment of a power semiconductor device,

[0045] FIG 14 is a schematic diagram of a power converter.

[0046] The exemplary embodiments explained below are preferred embodiments of the invention. In the exemplary embodiments, the described components of the embodiments each represent individual, independently considered features of the invention, which also further develop the invention independently of one another and are thus also to be considered as components of the invention, either individually or in a combination other than that shown. Furthermore, the described embodiments can also be supplemented by further features of the invention already described.

[0047] The same reference symbols have the same meaning in the different figures.

[0048] FIG. 1 shows a schematic sectional view of a first embodiment of a power semiconductor arrangement 2, which comprises a circuit carrier 4, a heat sink 6, and an electronic circuit 8. The heat sink 6 is embodied, for example, as a metallic heat sink, which has a heat sink base plate 10 and cooling fins 12. The metallic heat sink is made of a first metallic material, which may include, among other materials, aluminum or an aluminum alloy. For example, the heat sink is made of an aluminum alloy by extrusion. The electronic circuit 8 comprises power semiconductor elements 14, which may comprise, for example, an IGBT and / or a wide-bandgap transistor, as well as intermediate circuit capacitors 16.The circuit carrier 4 has a substantially flat first surface 18 and a substantially flat second surface 20 arranged on a side opposite the first surface 18. The substantially flat second surface 20 defines a horizontal xy plane. The power semiconductor elements 14 and intermediate circuit capacitors 16 of the electronic circuit 8 are connected to the circuit carrier 4 in a first region 22, in particular by a material bond, wherein the power semiconductor elements 14 are connected to the circuit carrier 4 on both sides. The power semiconductor elements 14 are arranged horizontally between the intermediate circuit capacitors 16, which leads to shorter supply lines and thus to a lower commutation inductance. The heat sink 6 is connected to the circuit carrier 4 in a second region 24, wherein the second region 24 is arranged at a horizontal distance from the first region 22.The heat sink 6 and the intermediate circuit capacitors 16 are arranged on the first surface 18 of the circuit carrier 4.

[0049] The circuit carrier 4 has a heat pipe 26 with a channel structure 28 in which a heat transfer fluid 30 is arranged, wherein the heat transfer fluid 30 is configured for two-phase cooling. The heat pipe 26 can be designed, among other things, as a heat pipe, pulsating heat pipe, or thermosiphon. At least one first channel 32 of the channel structure 28 is arranged in the first region 22 of the circuit carrier 4, and at least one second channel 34 of the channel structure 28 is arranged in the second region 24 of the circuit carrier 4. The at least one first channel 32 is in fluid communication with the at least one second channel 34, wherein the channels 32, 34 form the channel structure 28 of the heat pipe 26.For example, the circuit carrier 4 has a plurality of layers, each containing a dielectric and / or a metallic material, wherein the channel structure 28 of the heat conduction 26 is integrated into at least one layer of the circuit carrier 4. Furthermore, the channel structure 28 is sealed fluid-tight on both sides vertically or in the z-direction by adjacent layers. For example, a meandering channel structure 28 is incorporated into at least one layer of the layered circuit carrier 4. An electrically conductive or electrically non-conductive fluid can be used as the heat transfer fluid 30. Among other things, water-glycol mixtures, dielectric liquids, and / or oils are possible.

[0050] The intermediate circuit capacitors 16 are, for example, designed as aluminum electrolytic capacitors using through-hole technology and have terminals 36 arranged so as to run through the heat pipe 26 and the circuit carrier 4. For example, the terminals 36 of the intermediate circuit capacitors 16 are connected in a materially bonded manner, in particular by soldering, on the second surface 20. The first channel 32 is arranged so as to run around the terminals 36 of the intermediate circuit capacitors 16. The heat sink is connected, for example in a materially bonded manner, to a metallization 38 arranged on the first surface 18 of the circuit carrier 4, wherein the metallization 38 is thermally connected to the heat pipe 26 via metallic vias 39, in particular "thermal vias." The power semiconductor elements 14 are also connected to the heat pipe 26 via metallic vias 39.Thus, the power semiconductor elements 14 and intermediate circuit capacitors 16 of the electronic circuit 8, which are spaced horizontally from the heat sink 6, are thermally conductively connected to the heat sink 6 via the heat line 26.

[0051] FIG 2 shows a schematic sectional view of a second embodiment of a power semiconductor arrangement 2. The circuit carrier 4 has a printed circuit board 40 with a first surface 18 and a second surface 20, wherein the printed circuit board 40 is embodied, for example, as a printed circuit board (PCB) and can have a plurality of layers. The printed circuit board 40 further has a cavity 42 in which a metal core 44, which is made in particular from copper or a copper alloy, is arranged. The cavity 42 is arranged so as to run completely through the printed circuit board 40 and in this case can also be referred to as a recess in the printed circuit board 40. The metal core 44, which completely fills the recess, is embodied as a metal insert, in particular as a "copper coin". Such printed circuit boards 40 with at least one "copper coin" arranged in a recess are also called "copper coin PCBs".In particular, the metal core 44 closes the cavity 42 substantially flush with the second surface 20. At least one power semiconductor element 14 is integrally connected to the metal core 44. On a side facing away from the at least one power semiconductor element 14, the metal core 44 is in direct contact with the heat transfer fluid 30 of the heat pipe 26.

[0052] The heat pipe 26 has a base body 46 made at least partially of a dielectric material, which is connected flatly to the first surface 18 of the circuit board 40. For example, the channel structure 28 is introduced in the first region 22 in the base body 46 of the heat pipe 26 and is sealed in a fluid-tight manner by the essentially flat first surface 18 of the circuit board 40. Alternatively, the channel structure 28 can be arranged running in the first region 22 in the base body 46, wherein the base body 46 is connected over its entire surface, in particular adhesively, to the first surface 18 of the circuit board 40. The first channel 32 of the channel structure 28 runs parallel to the first surface 18 through the base body 46, wherein in particular a meandering channel structure is formed in order to ensure the best possible heat spreading.In the first area 22, the heat conduction 26 is thus arranged vertically between the circuit board 40 and the intermediate circuit capacitors 16.

[0053] Furthermore, the heat pipe 26 is arranged in the region of the second channel 34 of the channel structure 28 running through the heat sink base plate 10 of the heat sink, wherein the second channel 34 runs, in particular at least partially meandering, parallel to the first surface 18 through the heat sink base plate 10. For example, the second channel 34 of the channel structure 28 is introduced into the heat sink base plate 10 of the heat sink on a side facing away from the cooling fins 12, in particular by means of a machining process, and is sealed in a fluid-tight manner by connecting the base body 46 to the substantially planar first surface 18 of the printed circuit board 40. The heat sink base plate 10 is integrally connected to the base body 46, for example by means of adhesion, so that the first channel 32 is in fluid communication with the second channel 34 and the heat pipe 26 is encapsulated in a fluid-tight manner.The further design of the power semiconductor arrangement 2 in FIG 2 corresponds to that in FIG 1.

[0054] FIG 3 shows a schematic sectional view of a third embodiment of a power semiconductor arrangement 2. The circuit carrier 4 has a printed circuit board 40 with a first surface 18 and a second surface 20, wherein the printed circuit board 40 has a plurality of layers, each containing a dielectric and / or a metallic material. The first channel 32 of the channel structure 28 of the heat pipe 26 is arranged in the first region 22 in a layer of the printed circuit board 40, wherein the first channel 32 of the channel structure 28 is sealed in a fluid-tight manner on both sides by adjacent layers vertically or in the z-direction.

[0055] The second channel 34 of the channel structure 28 in the second region 24 is arranged to extend through the heat sink base plate 10 of the heat sink, wherein the heat sink base plate 10 has a coating 48 made of a second metallic material adjacent to the second channel 32, wherein the second metallic material has a higher thermal conductivity than the first metallic material. For example, the heat sink made of an aluminum alloy has a coating made of copper or a copper alloy. The coating 48 of the heat sink base plate 10 is thus in direct contact with the heat transfer fluid 30 of the heat pipe 26 and seals the second channel 34 in the second region 24 in a fluid-tight manner. The further configuration of the power semiconductor arrangement 2 in FIG. 3 corresponds to that in FIG. 2.FIG. 4 shows an enlarged schematic sectional view of a fourth embodiment of a power semiconductor arrangement 2, wherein the base body 46 of the heat pipe 26 is made of a dielectric or electrically non-conductive material. The dielectric material of the base body can include, among other things, a polymer or a ceramic material. A ceramic material enables an electrically insulating design of the base body 46 with good thermal properties. The heat transfer fluid 30 is an electrically non-conductive fluid. For example, perfluoro-N-alkylmorpholine is well suited as an electrically non-conductive heat transfer fluid 30 for the heat pipe 26 due to its high thermal conductivity, boiling point, and dielectric properties.

[0056] The circuit carrier 4 comprises a multilayer printed circuit board 40. Furthermore, vertical power semiconductor elements 14 are integrally connected to the circuit carrier 4 by means of planar assembly and connection technology. By eliminating special technologies required for conventional assembly and connection technology, such as wire bonding, improved reliability of the power semiconductor arrangement 2 and an extension of the service life are achieved. For example, a transistor θ and a diode D connected antiparallel to the transistor T are integrally connected to a structured metallization 38 of an outer layer 49 of the printed circuit board 40. On a side facing away from the printed circuit board 40, the vertical power semiconductor elements 14 are integrally connected to a metal frame 50, which contains, for example, copper. The integral connections are produced, for example, by soldering or sintering.The terminals of the vertical power semiconductor elements 14 facing away from the circuit board 40 are connected to the metallization 38 of the outer layer 49 of the circuit board 40 via connecting elements 52. The power semiconductor elements 14 are in direct contact with the electrically non-conductive fluid. The further design of the power semiconductor arrangement 2 in FIG. 3 corresponds to that in FIG. 2.

[0057] FIG 5 shows an enlarged schematic sectional view of a fifth embodiment of a power semiconductor arrangement 2, wherein the base body 46 of the heat pipe 26 is made of a metallic and thus electrically conductive material. On a side facing away from the circuit board 40, the vertical power semiconductor elements 14 are materially connected to a substrate 53, in particular a DCB (Direct Copper Bonded) substrate. The power semiconductor elements 14 and the connecting elements 52 are embedded in a potting material 54, which is manufactured, for example, with the aid of an underfiller. FIG 6 shows a schematic sectional view of a sixth embodiment of a power semiconductor arrangement 2. In the first region 22, the heat pipe 26 has a base body 46 which, as shown in FIG 4, is made of a dielectric or electrically non-conductive material and also vertically or vertically surrounds the first channel 32.in the z-direction, fluid-tightly sealed. The second channel 34 runs completely and parallel to the first surface 18 through the heat sink base plate 10 of the heat sink. The second channel 34 of the channel structure 28, which, for example, runs in a meandering shape through the heat sink base plate 10, is introduced, for example, by means of a machining process and then integrally connected to a cover, in particular a cover plate. For example, a cover plate is welded on to form the second channel 34 of the channel structure. By integrally connecting the base body 46 to the heat sink base plate 10, for example by means of adhesion, the first channel 32 is in fluid communication with the second channel 34, and the heat line 26 is encapsulated in a fluid-tight manner. The further embodiment of the power semiconductor arrangement 2 in FIG. 6 corresponds to that in FIG. 2.

[0058] FIG 7 shows a schematic representation of a section of a heat pipe 26, which is shown in a plan view (a) and in a sectional view (b). The base body 46 of the heat pipe 26 is made of a dielectric material and comprises a cavity 55 for forming the channel structure 28, in which the heat transfer fluid 30 is arranged. Alternatively, the base body 46 of the heat pipe 26 can be made of a metallic material, which can contain, for example, aluminum and / or copper. The base body 46 is constructed in two parts from a first base body part 56 and a second base body part 58, which each have walls 60 and depressions 62 arranged between the walls 60. A flat surface 64 is arranged on a side opposite the depressions 62.The base body parts 56, 58 are connected to one another via the respective corresponding walls 60, wherein a joining zone 66 is formed between the first base body part 56 and the second base body part 58, which results from a fluid-tight joining, e.g., gluing or welding, of the two halves. The channel structure 28 is created by combining corresponding recesses 62. In addition, the heat pipe 26 has continuous cylindrical recesses 68 for receiving terminals 36 of the intermediate circuit capacitors 16. Optionally, the surface of a base body 46 made of an electrically conductive material can be at least partially provided with a dielectric, in particular a thermally conductive one.

[0059] FIG 8 shows a schematic representation of an injection molding process for producing a base body part 56. The tool 70 for the injection molding process has an upper tool part 72 and a lower tool part 74, between which a casting chamber 76 is arranged to form the base body part 56. Before the actual injection molding A, placeholders 78, in particular cylindrical ones, are inserted into the casting chamber 76. The injection molding can be carried out using, among other things, a dielectric material, in particular a polymer. Alternatively, the injection molding can be carried out using a metallic material. After the base body part 56 has solidified, in particular cooled, the placeholders 78 are removed B from the casting chamber 76 to obtain continuous recesses 68 in the base body part 56. The base body part 56 can alternatively be manufactured, for example, additively using a 3D printing process.The further design of the base body part 56 in FIG 8 corresponds to that in FIG 7.

[0060] FIG. 9 shows an enlarged schematic sectional view of a sixth embodiment of a power semiconductor arrangement 2, which has a heat pipe 26 made of a dielectric material. The base body of the heat pipe 26 is connected flatly to the first surface 18 of the circuit board 40, wherein the heat pipe 26 is arranged between the circuit board 40 and an intermediate circuit capacitor 16, which is implemented using through-hole technology. The intermediate circuit capacitor 16 has terminals 36, which are arranged running through the recesses 68 of the heat pipe 26 and are integrally connected to the circuit board 40. For example, the terminals 36 are routed via metallic vias 80 and integrally connected via a soldered connection 82. The further embodiment of the power semiconductor arrangement 2 in FIG. 9 corresponds to that in FIG. 6.

[0061] FIG. 10 shows an enlarged schematic sectional view of a seventh embodiment of a power semiconductor arrangement 2, wherein at least one power semiconductor element 14 is integrally connected to a metal core 44. The metal core 44 is in direct contact with the base body 46 of the heat pipe 26. The power semiconductor elements 14 and intermediate circuit capacitors 16 are arranged vertically on opposite sides of the circuit carrier 4. Furthermore, the power semiconductor elements 14 are arranged horizontally between the intermediate circuit capacitors 16, which leads to shorter leads and thus to a lower commutation inductance. The further configuration of the power semiconductor arrangement 2 in FIG. 10 corresponds to that in FIG. 9.

[0062] FIG 11 shows a schematic sectional view of an eighth embodiment of the power semiconductor arrangement 2 in a plan view. The electronic circuit 8, which comprises power semiconductor elements 14 and intermediate circuit capacitors 16, is connected to the circuit carrier 4 in a first region 22, while the heat sink 6 is connected to the circuit carrier 4 in a second region 24, wherein the first region 22 is arranged horizontally, for example parallel to the x-axis, at a distance from the second region 24. The power semiconductor elements 14 and intermediate circuit capacitors 16 are arranged in rows 84, 86, 88 running parallel to the y-axis, wherein the power semiconductor row 88 is arranged between a first capacitor row 84 and a second capacitor row 86.

[0063] The channel structure 28 of the heat pipe 26, which is designed as a heat pipe, in particular a pulsating one, comprises a first channel 32 running in the first region 22, for example in a meandering shape, and a second channel 34 running in the second region 24, for example in a meandering shape, wherein the first channel 32 is in fluid communication with the second channel 34. The meandering structure of the channels 32, 34 runs, for example, perpendicular to the rows 84, 86, 88 of the power semiconductor elements 14 and intermediate circuit capacitors 16. The two terminals 36 of the intermediate circuit capacitors 16, for example, are arranged parallel to the meandering structure of the first channel 32 and are recessed in the meandering structure of the first channel 32. The further configuration of the power semiconductor arrangement 2 in FIG. 11 corresponds to that in FIG. 10.

[0064] FIG. 12 shows an enlarged schematic sectional view of a ninth embodiment of a power semiconductor arrangement 2, wherein, as shown in FIG. 6, the vertical power semiconductor elements 14 are integrally connected to the circuit carrier 4 using planar assembly and connection technology. On a side facing away from the printed circuit board 40, the vertical power semiconductor elements 14 are integrally connected to a DCB substrate. On the substrate, on a side facing away from the vertical power semiconductor elements 14, there is an additional heat sink 90, which is made, for example, from a metallic material, in particular an aluminum alloy, and which has a heat sink base plate 10 and cooling fins 12. The further configuration of the power semiconductor arrangement 2 in FIG. 12 corresponds to that in FIG. 11. FIG. 13 shows a schematic sectional view of a ninth embodiment of a power semiconductor arrangement 2.The printed circuit board 40 has a plurality of layers 92, 94, 96, which comprise an upper layer 92, for example a middle layer 94, and a base layer 96. The channel structure 28 of the heat pipe 26 is integrated into the middle layer 94 of the printed circuit board 40; the connections 36 of the intermediate circuit capacitors 16 and the heat sink base plate 10 are in direct contact with the heat transfer fluid 30 via recesses 98 in the base layer 96. Gaps in the region of the recesses 98 in the first region 22 between the intermediate circuit capacitors 16 and the printed circuit board 40 are sealed in a fluid-tight manner using an adhesive, in particular dielectric, sealing material 100. The heat sink base plate 10 closes the recess 98 in the second region 24 via a material-to-material connection 102, in particular an adhesive connection or a soldered connection, with the metallization 38 of the base 96.Thus, the terminals 36 of the intermediate circuit capacitors 16 are in fluid communication with the heat sink 6 via the heat transfer fluid 30. The further design of the power semiconductor arrangement 2 in FIG. 13 corresponds to that in FIG. 6.

[0065] FIG 14 shows a schematic representation of a power converter 104, which comprises, for example, a power semiconductor arrangement 2.

[0066] In summary, the invention relates to a power semiconductor arrangement 2 comprising a circuit carrier 4, a heat sink 6 and at least one electronic circuit 8, which has at least one power semiconductor element 14 and at least one intermediate circuit capacitor 16.In order to improve the switching behavior of a power semiconductor arrangement 2 and to ensure sufficient cooling, it is proposed that the electronic circuit 8 be connected to the circuit carrier 4 in a first region 22, wherein the heat sink 6 is connected to the circuit carrier 4 in a second region 24, which is horizontally spaced from the first region 22, wherein the circuit carrier 4 has a heat line 26 with a channel structure 28, in which a heat transport fluid 30 is arranged, wherein at least one first channel 32 of the channel structure 28 is arranged in the first region 22 and at least one second channel 34 of the channel structure 28 is arranged in the second region 24, wherein the at least one first channel 32 is in fluid communication with the at least one second channel 34, such that the electronic circuit 8 is thermally conductively connected to the heat sink 6 via the heat line 26.

Claims

Patent claims 1. A power semiconductor arrangement (2) comprising a circuit carrier (4), a heat sink (6), and at least one electronic circuit (8) which has at least one power semiconductor element (14) and at least one intermediate circuit capacitor (16), wherein the electronic circuit (8) is connected to the circuit carrier (4) in a first region (22), wherein the heat sink (6) is connected to the circuit carrier (4) in a second region (24) which is horizontally spaced from the first region (22), wherein the circuit carrier (4) has a heat line (26) with a channel structure (28) in which a heat transport fluid (30) is arranged, wherein at least one first channel (32) of the channel structure (28) is arranged in the first region (22) and at least one second channel (34) of the channel structure (28) is arranged in the second region (24), wherein the at least one first channel (32) is in fluid communication with the at least one second channel (34). stands,so that the electronic circuit (8) is thermally conductively connected to the heat sink (6) via the heat line (26).

2. Power semiconductor arrangement (2) according to claim 1, wherein the circuit carrier (4) has a printed circuit board (40) with a first surface (18) and a second surface (20) arranged on a side opposite the first surface (18), wherein the heat line (26) is connected flatly to a surface (18, 20) of the printed circuit board (40).

3. Power semiconductor arrangement (2) according to claim 2, wherein the heat line (26) is arranged between the printed circuit board (40) and the at least one intermediate circuit capacitor (16), wherein the at least one intermediate circuit capacitor (16) has terminals (36), in particular realized using through-hole technology, which are arranged running through the heat line (26) and are connected, in particular in a materially bonded manner, to the printed circuit board (40).

4. Power semiconductor arrangement (2) according to claim 3, wherein the terminals (36) of at least one intermediate circuit capacitor (16) are in direct contact with the heat transfer fluid (30) of the heat line (26).

5. Power semiconductor arrangement (2) according to one of claims 2 to 4, wherein the heat sink (6) and the at least one intermediate circuit capacitor (16) are arranged on the same surface (18, 20) of the circuit carrier (4).

6. Power semiconductor arrangement (2) according to one of the preceding claims, wherein the heat sink (6) is in direct contact with the heat transfer fluid (30) of the heat line (26).

7. Power semiconductor arrangement (2) according to one of the preceding claims, wherein the at least one second channel (34) of the channel structure (28) in the second region (24) is arranged to extend at least partially through the heat sink (6).

8. Power semiconductor arrangement (2) according to claim 7, wherein the heat sink (6) is made of a first metallic material and comprises, at least adjacent to the second channel (34) of the channel structure (28), a second metallic material which has a higher thermal conductivity than the first metallic material.

9. Power semiconductor arrangement (2) according to one of the preceding claims, wherein the heat pipe (26) has a base body (46) at least in the first region (22), wherein the base body (46) is made at least partially from a dielectric material.

10. Power semiconductor arrangement (2) according to one of the preceding claims, wherein the circuit carrier (4) has a metal core (44) arranged in a cavity (42), wherein at least one power semiconductor element (14) is integrally connected to the metal core (44).

11. Power semiconductor device (2) according to claim 10, wherein the metal core (44) is in direct contact with the heat transfer fluid (30) of the heat pipe (26).

12. Power semiconductor arrangement (2) according to one of the preceding claims, wherein at least one power semiconductor element (2) is designed as a vertical power semiconductor element (2) and is integrally connected to the circuit carrier (4) by means of planar assembly and connection technology.

13. Power semiconductor arrangement (2) according to one of the preceding claims, wherein at least one power semiconductor element (14) is arranged on a surface between at least two intermediate circuit capacitors (16) 14. Power converter (104) with at least one power semiconductor arrangement (2) according to one of the preceding claims.

15. A method for producing a power semiconductor arrangement (2) comprising a circuit carrier (4), a heat sink (6), and at least one electronic circuit (8) which has at least one power semiconductor element (14) and at least one intermediate circuit capacitor (16), wherein the electronic circuit (8) is connected to the circuit carrier (4) in a first region (22), wherein the heat sink (6) is connected to the circuit carrier (4) in a second region (24) which is horizontally spaced from the first region (22), wherein the circuit carrier (4) has a heat line (26) with a channel structure (28) in which a heat transport fluid (30) is arranged, wherein at least one first channel (32) of the channel structure (28) is arranged in the first region (22) and at least one second channel (34) of the channel structure (28) is arranged in the second region (24),wherein the at least one first channel (32) is fluidically connected to the at least one second channel (34), so that the electronic circuit (8) is thermally conductively connected to the heat sink (6) via the heat line (26).

16. The method according to claim 15, wherein a base body (46) of the heat pipe (26) is produced from a dielectric material by means of an injection molding process, wherein the injection molding process comprises the following steps: - injection molding (A) of a first base body part (56) and a second base body part (58), which each have depressions (62), Joining the base body parts (56, 58), wherein the channel structure (28) is created by combining the recesses (62).

17. The method according to claim 16, wherein, prior to injection molding, particularly cylindrical, placeholders (78) are inserted into the casting space (76), wherein, after solidification of the dielectric material, the placeholders (78) are removed (B) from the casting space (76) to obtain recesses (68) in the base body part (56, 58).

Images