Method for transferring a component

Abstract

A method for transferring a component comprises providing a transfer assembly having the component, a carrier substrate and a connecting structure. The carrier substrate is transparent to laser radiation. The component is connected to the carrier substrate via the connecting structure. The connecting structure has at least one layer stack with a meltable layer composed of a meltable metal and a dewetting layer adjoining the meltable layer. The method further comprises positioning the transfer assembly over a target substrate. Furthermore, laser radiation is emitted in the direction of the at least one layer stack through the carrier substrate, such that melting of the meltable metal of the meltable layer and dewetting of the melted meltable metal from the dewetting layer are brought about, and the component is thereby separated from the carrier substrate and transferred to the target substrate.

Description

[0001] METHOD FOR TRANSFERRING A COMPONENT

[0002] DESCRIPTION

[0003] The present invention relates to a method for transferring a component. The invention further relates to a transfer arrangement for transferring a component.

[0004] This patent application claims priority from German patent application 10 2024 104 131 . 5 , the disclosure of which is hereby incorporated by reference .

[0005] The manufacture of semiconductor devices can involve transferring components to a target substrate. The components to be transferred can be semiconductor chips, such as LED (light-emitting diode) chips. Different methods can be used for the transfer. One example is the so-called LI FT (laser induced forward transfer) method, in which a sacrificial layer is decomposed or evaporated under the influence of laser radiation. In this way, a component can be detached or pushed away from a donor substrate in a pulsed manner and moved towards a target substrate.

[0006] Possible requirements for a transfer process may include transferring the components with high deposition accuracy and avoiding damage to the components during transfer. Meeting these requirements can prove difficult when transferring components with dimensions in the micrometer range, such as pLEDs.

[0007] The object of the present invention is to provide a solution for improved transfer of a component. This object is achieved by the features of the independent patent claims. Further advantageous embodiments of the invention are specified in the dependent claims.

[0008] According to one aspect of the invention, a method for transferring a component is proposed. The method comprises providing a transfer arrangement having the component, a carrier substrate and a connecting structure. The carrier substrate is transparent to laser radiation. The component is connected to the carrier substrate via the connecting structure. The connecting structure has at least one layer stack with a melt layer made of a melt metal and a dewetting layer adjacent to the melt layer. The method further comprises positioning the transfer arrangement over a target substrate. Further provided is emission of laser radiation in the direction of the at least one layer stack through the carrier substrate.This causes melting of the melt metal of the melt layer and dewetting of the melted melt metal from the dewetting layer, whereby the component is separated from the carrier substrate and transferred to the target substrate.

[0009] In the proposed method, the transfer of a component is based on exploiting dewetting in order to bring about a detachment of the component from a carrier substrate. In this case, a transfer arrangement is provided which has the component, the carrier substrate which is transparent to laser radiation and a connecting structure. The connecting structure, via which the component is connected to the carrier substrate, comprises at least one layer stack with a melt layer made of a melt metal and a dewetting layer adjacent to the melt layer. To transfer the component, the transfer arrangement is positioned over a target substrate and laser radiation is emitted through the carrier substrate in the direction of the at least one layer stack in order to melt and thus liquefy the melt metal of the melt layer, but not to decompose or evaporate it.The melting of the molten metal can be based on the laser radiation being absorbed by the connecting structure or the layer stack, and as a result the molten layer is heated above its melting temperature. The melting leads to dewetting of the molten metal, which has been put into a liquid state, from the dewetting layer. This can be due to the dewetting layer providing a small or insufficient surface energy in relation to the molten molten metal. The dewetting is accompanied by a detachment of the molten metal from the dewetting layer, as a result of which the component is separated from the carrier substrate and transferred to the target substrate. The movement orThe falling motion of the component toward the target substrate can be caused by an impulse acting on the component due to the dewetting of the liquid molten metal and by the influence of gravity. Depending on the mass of the component, the influence of gravity may be smaller or significantly smaller than the effect due to dewetting, and thus may be negligible compared to it.

[0010] Furthermore, the impulse effect on the component caused by the dewetting of the liquid molten metal can be smaller or significantly smaller than the forces that can occur in a conventional LIFT process as a result of the decomposition of a sacrificial material. The transfer of the component, which can be induced directly by the emission of the laser radiation, can therefore take place with comparatively small or no significant impulse effect on the component, and can therefore be carried out much more gently than a conventional LIFT process. This makes it possible to transfer the component to the target substrate with a high degree of reliability and deposition accuracy, and to avoid damage to the component. The transfer can also be carried out quickly or with a short transfer chain and cost-effectively.The proposed method can therefore be regarded as an advantageous further development of a LI FT method.

[0011] Further possible details and embodiments that may be considered for the process are described below.

[0012] The at least one layer stack of the provided transfer arrangement can comprise at least one further layer in addition to the melt layer and the dewetting layer. One possible example is a contact layer that can be used for electrically contacting the component. Further embodiments are explained below.

[0013] The method can be used in the context of manufacturing a device or semiconductor device, for example, a display device. It is possible for the target substrate to be a component of the device to be manufactured, on which the component remains after transfer. Alternatively, the target substrate can be a temporary substrate from which the component can be separated subsequently or after performing further process steps.

[0014] The target substrate can be provided with an adhesive or adhesive material that can cause the component to adhere and thus catch or fix it on the target substrate. This can be, for example, an adhesive.

[0015] The carrier substrate, which can also be referred to as a donor substrate or source substrate, can be made of a transparent material such as quartz glass, glass or sapphire. The carrier substrate can furthermore be a wafer. The carrier substrate can have two opposite main sides, i.e. sides with the largest surface area. The connection of the component to the carrier substrate via the connection structure can be realized on one of the main sides of the carrier substrate. To melt the molten metal, the other of the two main sides of the carrier substrate can be irradiated with the laser radiation, such that the laser radiation can traverse the carrier substrate in the direction of the at least one layer stack.

[0016] The laser radiation used can be UV (ultraviolet) radiation. Furthermore, the laser radiation can be emitted in the form of one or more successive laser pulses in the direction of the at least one layer stack. The laser radiation can also be emitted in a focused form in the direction of the at least one layer stack. The laser radiation can be generated and emitted by a suitable laser device.

[0017] The component to be transmitted can be an electronic component or a semiconductor component. For example, the component is an optoelectronic component such as an LED (light-emitting diode) or an LED chip, or a laser diode or an LD chip. Other examples are a micromechanical component or MEMS component (micro-electromechanical system), a sensor component or sensor chip, and an integrated circuit or an IC chip.

[0018] As stated above, the component can be transferred to the target substrate with little pulse action on the component. The method can therefore also be used for a component design with a small package or chip size with small dimensions. The component can, for example, have lateral dimensions in the micrometer range and in this sense be a pLED, for example. In this design too, the component can be transferred to the target substrate reliably, without damage and with high deposition accuracy. The component designed as a pLED, for example, can have lateral dimensions of, for example, less than 10 pm x 10 pm. Larger dimensions, such as 15 pm x 30 pm or 40 pm x 80 pm, are also possible. Furthermore, the component, which can be an LED or an IC, can have lateral dimensions of several mm x mm.

[0019] The transfer arrangement can be provided in such a way that the production of the at least one layer stack with the melt layer and the dewetting layer is integrated into a manufacturing process of the component. In this way, a cost reduction can be achieved.

[0020] In a further embodiment, the dewetting layer of the at least one layer stack is spaced smaller from the carrier substrate than the molten layer. This has the consequence that, during transfer of the component, the dewetting layer remains on the carrier substrate and the molten metal remains on the component. In this embodiment, the component is transferred to the target substrate together with the molten metal. The molten metal present on the component after transfer can, for example, be part of a contact structure of the component or be used to electrically contact the component.

[0021] In an alternative embodiment, the dewetting layer of the at least one layer stack is at a greater distance from the carrier substrate than the melt layer. This means that when the component is transferred, the melt metal remains on the carrier substrate and the dewetting layer remains on the component. In this embodiment, the component is transferred to the target substrate together with the dewetting layer. The melt metal remaining on the carrier substrate can, for example, be recycled after appropriate processing of the carrier substrate. In a further embodiment, the dewetting layer remaining on the component is removed from the component after the component has been transferred. This procedure can be used if the layer stack in question has a contact layer adjacent to the dewetting layer and usable for electrically contacting the component.By removing the dewetting layer, the contact layer can be exposed.

[0022] The dewetting layer can be an electrically insulating layer. In this case, the dewetting layer can be an oxide layer, for example, a silicon oxide or aluminum oxide layer. A polymer layer is also possible, for example, a resist or photoresist material, benzocyclobutene, polyimide, an epoxy material, or silicone material.

[0023] In a further embodiment, the dewetting layer is an electrically conductive layer, such as a transparent, electrically conductive oxide layer. For example, a design as an indium tin oxide layer is possible. In this way, the dewetting layer can not only dewette and detach the molten metal, but can also be used as a contact layer for electrically contacting the component.

[0024] Various configurations are possible for the melting metal of the at least one layered tape. The melting metal can, for example, be or comprise a metal or solder metal such as aluminum, tin, indium, or bismuth.

[0025] In the method, the laser radiation used can melt only the molten metal, but not other components of the connecting structure. Furthermore, the laser radiation used to melt the molten metal can be absorbed not by the molten layer of at least one layer stack, but by another component or layer of the connecting structure or layer stack.

[0026] In a further embodiment, the at least one layer stack of the provided transfer arrangement has a heat dissipation layer which is heated by the emission of the laser radiation and thereby emits heat to the melt layer of the layer stack for melting the molten metal. This can promote the reliability of the method. The heat dissipation layer can be a metallic layer. For example, a design made of titanium, nickel, platinum or gold is possible. The transfer arrangement or the connecting structure can be realized in such a way that the emitted laser radiation impinges on the heat dissipation layer of the at least one layer stack and can be absorbed by the heat dissipation layer while being heated. The heat dissipation layer can also be referred to as an absorber or absorber layer.Alternatively, the laser radiation can be absorbed by a further layer of the connecting structure arranged upstream of the heat dissipation layer, heating the same, which can then heat the heat dissipation layer, optionally via at least one further layer of the connecting structure. The heat dissipation layer of the at least one layer stack can adjoin its melt layer. In this case, the melt layer can be present between the heat dissipation layer and the dewetting layer of the layer stack. Alternatively, the heat dissipation layer can adjoin the dewetting layer. In this case, the dewetting layer can be located between the heat dissipation layer and the melt layer of the layer stack in question. In this case, the heat dissipation layer can dissipate heat to the melt layer via the dewetting layer.

[0027] In a further embodiment, the at least one layer stack of the provided transfer arrangement has a wetting layer which is wetted by the molten liquid molten metal or to which the molten metal adheres during and after melting. This can also promote the reliability of the method. In the at least one layer stack of the transfer arrangement, the wetting layer, corresponding to the dewetting layer, can border the molten layer, specifically in such a way that the molten layer is located between the dewetting layer and the wetting layer. During the transfer of the component, the wetting layer can provide a higher surface energy and thus a higher wetting force with respect to the liquid molten metal of the molten layer than the dewetting layer, so that the molten metal adheres to the wetting layer as stated above.The wetting layer can be a metallic layer. For example, it can be made of titanium, nickel, platinum, or gold. The wetting layer can also be the heat-dissipation layer described above. Alternatively, a separate heat-dissipation layer can be provided alongside the wetting layer.

[0028] In a further embodiment, the connecting structure of the provided transfer arrangement has an adhesive that is transparent to the laser radiation and via which the at least one layer stack is connected to the carrier substrate. During transfer, the emitted laser radiation can traverse the carrier substrate and the adhesive in the direction of the at least one layer stack. The adhesive can adjoin the carrier substrate and the at least one layer stack or a side of the layer stack in question facing the carrier substrate, but not the component. This configuration enables cost-effective provision of the transfer arrangement. The adhesive can be made, for example, from fluoropolymer, silicone, benzocyclobutene or polyimide.

[0029] In a further embodiment, the at least one layer stack of the provided transfer arrangement is connected to the carrier substrate via a bond connection. In this case, the layer stack can have a connecting layer which has been connected to the carrier substrate by carrying out a bonding process. The connecting layer can be assigned to the connecting structure of the transfer arrangement. The connecting layer can be an oxide layer, for example a silicon oxide layer. Such an adhesive-free connection can be characterized by high reliability and stability, which favors the provision of the transfer arrangement and transfer of the component. Furthermore, problems such as outgassing of adhesive can be avoided. Such properties can also apply to the following embodiment.

[0030] In a further embodiment, a wettable layer is arranged on the carrier substrate. The at least one layer stack is connected to the wettable layer via a connecting solder. The connecting solder can be a gold-tin alloy, for example. The connecting solder has a higher melting temperature than the molten metal, so that only the molten metal and not the connecting solder is melted by the emission of the laser radiation. The molten metal can therefore be liquefied in a targeted manner by the action of the laser radiation in order to transfer the component to the target substrate. The wettable layer can be a metallic layer. The wettable layer and the connecting solder can be assigned to the connecting structure of the transfer arrangement.

[0031] In a further embodiment, providing the transfer arrangement comprises providing a starting arrangement comprising the component and the at least one layer stack, and subsequently connecting the starting arrangement to the carrier substrate. This procedure allows the component and the at least one layer stack to be provided in a suitable manner and independently of the carrier substrate.

[0032] In a further embodiment, the initial arrangement has a base substrate on which the component is arranged. The base substrate is removed after the initial arrangement has been connected to the carrier substrate. This configuration can be used when the component is a semiconductor component. In this case, the base substrate can be a growth substrate on which the component or a semiconductor layer sequence designed to produce the component can be grown. The growth can take place using an epitaxial process. The base substrate can also be a wafer.

[0033] With reference to the above-described embodiments in which an adhesive, a bonding compound or a connecting solder is used, the following may also be provided.

[0034] In a further embodiment, the starting arrangement has a sacrificial layer which is adjacent to the component and to the at least one layer stack and which has an opening in the region of the at least one layer stack, and the starting arrangement is connected to the carrier substrate by adhesive bonding. The adhesive is bonded using an adhesive which is transparent to laser radiation and is carried out in such a way that the adhesive is adjacent to the carrier substrate, to the sacrificial layer and to the at least one layer stack in the region of the opening, but not to the component. After adhesive bonding, the sacrificial layer is removed. This can be carried out by etching the sacrificial layer and also after removing the base substrate. By removing the sacrificial layer, a gap orAn air gap can be created so that the adhesive can adjoin the carrier substrate and the at least one layer stack, but not the component.

[0035] In a further embodiment, the initial arrangement is provided in such a way that the at least one layer stack has a connecting layer. Furthermore, a bonding process is carried out to connect the initial arrangement to the carrier substrate, in which bonding process the connecting layer is connected to the carrier substrate. The bonding process can be a wafer bonding process such as fusion bonding. The bonding process can be carried out at an appropriate temperature or under the influence of temperature. The temperature used in the bonding process can be higher than a melting temperature of the melting metal, so that melting of the melt layer is avoided during this process.

[0036] In a further embodiment, the initial arrangement is provided in such a way that a connecting solder is arranged on the at least one layer stack. As stated above, the connecting solder can have a higher melting temperature than the melt metal of the melt layer. Furthermore, a wettable layer is arranged or formed on the carrier substrate. Furthermore, a soldering process is carried out to connect the initial arrangement to the carrier substrate, in which solder the at least one layer stack is connected to the wettable layer arranged on the carrier substrate via the connecting solder. This can be done in such a way that only the connecting solder, but not the melt layer, is melted.

[0037] In a further embodiment, the connection structure of the provided transfer arrangement has, with respect to the component, a plurality of layer stacks arranged laterally next to one another, comprising the melt layer and the dewetting layer. The laser radiation is emitted through the carrier substrate in the direction of the plurality of layer stacks belonging to the component, such that in each of the plurality of layer stacks, melting of the melt metal and dewetting of the melted melt metal by the dewetting layer is caused in order to separate the component from the carrier substrate and transfer it to the target substrate. This embodiment can be used if the component has a plurality of or two contact layers on one side, which are provided for electrical contacting of the component. The layer stacks can be formed in the region of the contact layers.The contact layers can be components of the respective layer stacks. The multiple layer stacks can have a consistent structure. The features and details described above with respect to one layer stack can be applied accordingly to the multiple layer stacks.

[0038] The method can be used not only for transferring one component, but also for transferring a plurality of components. In this sense, according to a further embodiment, the transfer arrangement has a plurality of components which are connected to the carrier substrate via the connecting structure. The connecting structure has, for each of the components, at least one layer stack with the melt layer and the dewetting layer. The method is carried out in such a way that a plurality of or all of the components are transferred to the target substrate. In this case, individual components can be transferred one after the other, a plurality of components can be transferred simultaneously, or a plurality of components can be transferred simultaneously in a sequential manner.This can be achieved in several irradiation steps by emitting the laser radiation in the direction of individual or multiple layer stacks of the interconnect structure in order to melt corresponding melt layers and thereby separate corresponding components from the carrier substrate. Between individual irradiation steps, the transfer arrangement and / or the target substrate can be moved or repositioned in order to transfer the respective components to predetermined locations on the target substrate. The features and details described above with regard to transferring one component can be applied accordingly for transferring multiple components. In this context, the high deposition accuracy of the transfer method offers the possibility of providing small distances or chip distances between the components on the target substrate.

[0039] According to a further aspect of the invention, a transfer arrangement for transferring a component is proposed. The transfer arrangement has the component, a carrier substrate and a connecting structure. The carrier substrate is transparent to laser radiation. The component is connected to the carrier substrate via the connecting structure. The connecting structure has at least one layer stack with a molten layer made of a molten metal and a dewetting layer adjacent to the molten layer. The transfer arrangement is designed such that by radiating laser radiation in the direction of the at least one layer stack through the carrier substrate, melting of the molten metal of the molten layer and dewetting of the molten metal from the dewetting layer can be brought about in order to thereby separate the component from the carrier substrate and transfer it to a target substrate.

[0040] The configurations, features, and details mentioned above with regard to the method can be applied correspondingly to the transfer arrangement. For example, the transfer arrangement enables a forward transfer with little or no significant pulse impact on the component, whereby the component can be transferred reliably to the target substrate without damage and with high deposition accuracy.

[0041] The advantageous embodiments and further developments of the invention explained above and / or reproduced in the subclaims can - except, for example, in cases of clear dependencies or incompatible alternatives - be used individually or in any desired combination with one another.

[0042] The above-described properties, features, and advantages of this invention, as well as the manner in which they are achieved, will become clearer and more readily understood in connection with the following description of exemplary embodiments, which are explained in more detail in connection with the schematic drawings. Figures 1 to 4 show a provision of a transfer arrangement according to a possible embodiment using side views;

[0043] Figures 5 and 6 are plan views illustrating features of the transfer arrangement provided in accordance with Figures 1 to 4;

[0044] Figures 7 to 9 show a transfer of a component using the transfer arrangement of Figure 4 using lateral views;

[0045] Figures 10 and 11 show a provision of a transfer arrangement according to a further embodiment based on lateral views;

[0046] Figures 12 and 13 are plan views illustrating features of the transfer arrangement provided in accordance with Figures 10 and 11;

[0047] Figure 14 is a side view of a further embodiment of a transfer arrangement;

[0048] Figures 15 to 17 show a transfer of a component using the transfer arrangement of Figure 14 using lateral views;

[0049] Figure 18 is a side view of a further embodiment of a transfer arrangement;

[0050] Figures 19 to 22 show a transfer of a component using the transfer arrangement of Figure 18 followed by a further process step based on lateral views;

[0051] Figures 23 to 25 show the provision of a transfer arrangement according to a further embodiment using lateral views; Figures 26 to 28 show the transfer of a component using the transfer arrangement of Figure 25 using lateral views;

[0052] Figures 29 and 30 are side views of further embodiments of a transfer arrangement;

[0053] Figures 31 to 33 show the provision of a transfer arrangement according to a further embodiment based on lateral views; and

[0054] Figures 34 to 36 show a transfer of a component using the transfer arrangement of Figure 33 using lateral views;

[0055] Based on the schematic figures, embodiments of a transfer arrangement 100 and a corresponding method for transferring a component 120, as well as a corresponding production of the transfer arrangement 100, are described. The method is based on the utilization of different wetting forces and a melting and dewetting of a melt metal 142 from a dewetting layer 131, 132, 133 in order to separate the component 120 from a carrier substrate 110 and to effect a forward transfer of the component 120 to a target substrate 117. It is pointed out that the schematic figures may not be true to scale. Therefore, components and structures shown in the figures may be exaggeratedly large or reduced in size for better understanding. The figures are sectional views. The circumstances shown here can occur side by side in many repetitive ways.Additionally, it is noted that features and details mentioned with reference to one embodiment also apply to other embodiments, and that multiple embodiments and their features can be combined with one another. Corresponding features can only be described in detail with reference to one embodiment.

[0056] Figures 1 to 4 show the provision of a transfer arrangement 100 according to a possible embodiment using lateral sectional views. First, an initial arrangement 105 depicted in Figure 1 is provided. The initial arrangement 105 comprises a base substrate 115, a plurality of components 120 arranged laterally next to one another on the base substrate 115, a plurality of structured layer stacks 130, of which two layer stacks 130 are formed laterally next to one another on a semiconductor body 121 of a component 120, and a sacrificial layer 160 partially covering the base substrate 115 and the components 120 together with the layer stacks 130. The base substrate 115 has two opposite main sides (sides with the largest surface area), wherein the arrangement of the components 120, layer stacks 130 and the sacrificial layer 160 is located on one of the main sides of the base substrate 115.

[0057] The components 120 can be optoelectronic components 120 in the form of LEDs (light-emitting diodes) or LED chips. In this case, the semiconductor body 121 of a component 120 can have a semiconductor layer sequence with differently doped semiconductor layers and an active zone 122 for generating radiation, as indicated in Figure 1. The active zone 122 can have a pn junction or a single or multiple quantum well structure. The components 120 can have dimensions in the micrometer range and can therefore be pLEDs. The components 120 can have lateral dimensions in the range of or less than 100 pm x 100 pm and a thickness of a few micrometers.

[0058] The layer stacks 130 are located on a side of the semiconductor body 121 facing away from the base substrate 115. As shown in Figure 1, each of the layer stacks 130 comprises, starting from and in a direction away from a corresponding semiconductor body 121, a superimposed arrangement of a wetting layer 149, a melt layer 141 made of a melt metal 142, a dewetting layer 131 and a heat dissipation layer 147. The heat dissipation layer 147 can be formed from a metallic material such as titanium. The dewetting layer 131 can be formed from an oxide material such as SiO2. The melt metal 142 of the melt layer 141 can be a solder or solder metal such as tin. The wetting layer 149 can be made from an electrically conductive or metallic material such as nickel or gold.

[0059] The wetting layers 149, of which two wetting layers 149 are present on each of the semiconductor bodies 121, corresponding to the layer stacks 130, can simultaneously be used as contact layers (anode and cathode) of the respective components 120. Depending on the arrangement on the same side of the semiconductor bodies 121, the components 120 can be horizontal components 120 or LEDs, which can be electrically contacted on the same side.

[0060] With regard to the components 120 and their semiconductor bodies 121, it should be noted that, deviating from the schematic representation in Figure 1 (and subsequent figures), further structures and layers not shown may be formed in the region of the semiconductor bodies 121. For example, an electrical connection structure extending vertically through the semiconductor bodies 121 may be implemented, so that during operation of the components 120, electrical potentials can be applied to semiconductor layers on opposite sides of the respective active zones 122.

[0061] To provide the initial arrangement 105 of Figure 1, suitable method steps and processes known from semiconductor technology, such as growth, coating, and structuring processes, can be carried out. In this respect, the base substrate 115 can be a growth substrate or growth wafer on which a larger semiconductor layer sequence for producing the semiconductor bodies 121 of the components 120 can be grown by carrying out an epitaxial process. The growth substrate can be a sapphire substrate with a start or seed layer formed thereon. The semiconductor bodies 121 of the components 120 can subsequently emerge from the semiconductor layer sequence by carrying out appropriate structuring. The structuring can be carried out in such a way that the semiconductor bodies 121, as shown in Figure 1, have a trapezoidal cross-sectional profile tapering in a direction away from the base substrate 115.In this case, a circumferential edge 125 of the side of the semiconductor body 121 facing away from the base substrate 115, as seen in plan view, can be offset inwards with respect to an outline of the semiconductor body 121 in the region of the base substrate 115.

[0062] The design of the semiconductor bodies 121 with inwardly offset edge 125 is also clear from the top view of the initial arrangement 105 in Figure 5, in which the sacrificial layer 160 is omitted. In Figure 5, the edge 125 is shown in dashed lines. Figure 5 further shows that the components 120 and their semiconductor bodies 121, viewed in top view, can have an elongated rectangular shape. Furthermore, the components 120 can be arranged in a matrix-like manner in the form of rows and columns next to one another on the base substrate 115.

[0063] The sacrificial layer 160, with which the base substrate 115 in regions next to and between the semiconductor bodies 121 as well as the semiconductor bodies 121 and layer stacks 130 are partially covered, has openings 161 in the region of the layer stacks 130, via which the layer stacks 130 or a side of the layer stacks 130 facing away from the base substrate 115 and thus the heat-dissipating layers 147 are partially exposed. This embodiment shown in Figure 1 is also clear from the top view of the output arrangement 105 in Figure 6, in which the sacrificial layer 160 is shown hatched. The sacrificial layer 160 can be formed from a metallic material such as aluminum.

[0064] To produce the transfer assembly 100, the starting assembly 105 is further connected to a carrier substrate 110, as shown in Figure 2, which is done in this case by bonding using an adhesive 170. The carrier substrate 110 has two opposite main sides, with the connection being established with one of the two main sides of the carrier substrate 110. The bonding is carried out in such a way that the adhesive 170 borders the relevant main side of the carrier substrate 110, the sacrificial layer 160, and the layer stacks 130 exposed in the region of the openings 161 of the sacrificial layer 160, or their heat-dissipating layers 147.

[0065] Both the carrier substrate 110 and the adhesive 170 are transparent to a laser radiation 200 used during a (later) transfer (see Figure 7). The laser radiation 200 can be UV radiation (ultraviolet), so that the carrier substrate 110 and the adhesive 170 are UV-transparent. The carrier substrate 110 can be formed, for example, from quartz glass, glass, or sapphire, or can be a wafer formed from the aforementioned materials. The adhesive 170 can be fluoropolymer, silicone, BOB (benzocyclobutene), or PI (polyimide).

[0066] Subsequently, the base substrate 115 is removed so that the arrangement shown in Figure 3 is present. The removal of the base substrate 115 can, for example, comprise performing a laser lift-off process and, if appropriate, subsequent grinding or free grinding. In this way, sides of the semiconductor bodies 121 facing away from the carrier substrate 110, as well as the sacrificial layer 160 in the regions between them, are exposed. To provide the transfer arrangement 100, the sacrificial layer 160 is further removed, as shown in Figure 4. This can be done by a suitable selective etching process. This is made possible by the areas of the sacrificial layer 160 that are exposed after the removal of the base substrate 115.The removal of the sacrificial layer 160 results in air gaps 165 being present at the location of the previous sacrificial layer 160 with respect to each of the components 120, between, on the one hand, the adhesive 170 and, on the other hand, the semiconductor bodies 121 and layer stacks 130. In this case, the adhesive 170 borders the carrier substrate 110 and the layer stacks 130 or the sides of the layer stacks 130 facing the carrier substrate 110 and thus their heat-dissipating layers 147, but not the components 120 and their semiconductor bodies 121. As a result, the transfer arrangement 100 can be used to transfer the components 120.

[0067] The transfer arrangement 100 present after the removal of the sacrificial layer 160 and depicted in Figure 4 comprises, in addition to the carrier substrate 110 and the components 120 arranged laterally next to one another, a connecting structure 101 via which the components 120 are connected to the carrier substrate 110. The connecting structure 101 comprises the layer stacks 130 and the adhesive 170 adjacent to the layer stacks 130 and the carrier substrate 110.

[0068] Figures 7 to 9 illustrate the transfer of a component 120 using the transfer assembly 100 of Figure 4 using lateral sectional views. The transfer can be used in the context of manufacturing a device or semiconductor device. Here, the transfer assembly 100, as shown in Figure 7, is positioned over a target substrate 117 onto which the component 120 is to be transferred. Subsequently, the transfer arrangement 100, and here in the region of the component 120 to be transferred and the layer stack 130 associated with the component 120, is irradiated with an ultraviolet laser radiation 200, in such a way that the laser radiation 200 is emitted through the transparent carrier substrate 110 and the transparent adhesive 170 in the direction of the relevant layer stack 130.The irradiation can be carried out with one or more consecutive pulses of laser radiation 200, as well as in a focused form. The laser radiation 200 can be generated and emitted by a laser device (not shown).

[0069] As shown in Figure 7, the laser radiation 200 is directed onto that main side of the carrier substrate 110 which is opposite to the main side of the carrier substrate 110 provided with the connection structure 101 and the components 120. The laser radiation 200 thus coupled into the carrier substrate 110 can pass through the carrier substrate 110 and the adhesive 170 and impinge on the layer stacks 130 assigned to the component 120 or their heat dissipation layers 147. At this point, the laser radiation 200 can be absorbed by the heat dissipation layers 147, as a result of which they heat up. The heat dissipation layers 147 can in this sense also be referred to as absorbers or absorber layers.From the heating heat-dissipating layers 147, corresponding heat can be dissipated, in this case via the dewetting layers 131, to the melt layers 141 of the layer stacks 130, so that the melt metal 142 of the melt layers 141 is heated above its melting temperature, and consequently the melt metal 142 is melted and liquefied. Other components of the connecting structure 101, in contrast, are not melted.

[0070] As shown in Figure 8, the melting of the molten metal 142 leads to an increasing dewetting of the liquid molten metal 142 from the dewetting layers 131 (indicated in Figure 8 by horizontal arrows) and thus to a detachment of the molten metal 142 from the dewetting layers 131, whereas the wetting layers 149 are wetted or remain wetted with the molten metal 142 and the molten metal 142 remains adhered to the wetting layers 149. This process is based on the fact that the wetting layers 149 provide a greater surface energy and thus a higher wetting force with respect to the liquid molten metal 142 than the dewetting layers 131.

[0071] The dewetting and detachment of the molten metal 142 from the dewetting layers 131 results in the component 120 in question being separated from the carrier substrate 110 and thereby being able to fall towards or onto the target substrate 117, as shown in Figure 9. Even during the dewetting, the component 120 can sink slightly towards the target substrate 117 (cf. Figure 8). The movement or falling movement of the component 120 (indicated in Figure 9 by a vertical arrow) can be caused by gravity, together with an impulse effect caused by the dewetting of the molten metal 142 and pressing the component 120 towards the target substrate 117. Depending on the mass of the component 120, the influence of gravity may be smaller or significantly smaller than the effect due to dewetting. Furthermore, the forces acting on the component 120 may be smaller or significantly greater.be significantly smaller than the forces resulting from the decomposition of a sacrificial material in a conventional process. The transfer of the component 120 based on the dewetting and detachment of the molten metal 142 can thus be carried out relatively smoothly and accordingly with high reliability and deposition accuracy on the target substrate 117, as well as without risk of damage to the component 120. The deposition accuracy can, for example, be in the range of or better than 10 pm.

[0072] In the transfer arrangement 100 of Figure 4, the dewetting layers 131 of the layer stack 130 are arranged at a smaller distance from, and thus closer to, the carrier substrate 110 than the melt layers 141. This means that when the component 120 is transferred, the dewetting layers 131 remain on the carrier substrate 110, and the melt metal 142 remains on the component 120 or is transferred together with it to the target substrate 117 (see Figure 9). In this case, the melt metal 142, together with the wetting layers 149, which can be used as contact layers, can be used to electrically contact the component 120.

[0073] It is possible to transfer several or all of the components 120 of the transfer arrangement 100 to the target substrate 117. In this case, individual components 120 can be transferred one after the other, several components 120 can be transferred simultaneously, or several components 120 can be transferred simultaneously in a successive manner. This can be carried out in the manner described above in several irradiation steps in which the laser radiation 200 is emitted in the direction of the layer stacks 130 assigned to the respective components 120 through the carrier substrate 110 and the adhesive 170 in order to melt melt layers 141, thereby separating components 120 from the carrier substrate 110 and transferring them to the target substrate 117. Between individual irradiation steps, the transfer arrangement 100 and / or the target substrate 117 can be moved or .be realigned in order to transfer the respective components 120 to the target substrate 117 at predetermined locations. In Figure 7, such a procedure is indicated by a corresponding free space to the left of the component 120 to be transferred. A (further) component 120 may have been present at this location previously. This component 120 may have been transferred to another location on the target substrate 117 before the component 120 transferred according to the process sequence of Figures 7 to 9.

[0074] The target substrate 117 can be part of a device to be manufactured, on which the components 120 remain after transfer. Alternatively, the target substrate 117 can be a temporary substrate from which the components 120 can be separated again, optionally after performing further process steps. The target substrate 117 can also be provided with an adhesive material, such as an adhesive, which can ensure adhesion and thus attachment of the components 120 to the target substrate 117 (not shown).

[0075] Further variants and embodiments are described below which may be considered for a transfer arrangement 100 described here and a corresponding transfer method. Corresponding features and aspects, as well as identical and equivalent components, are not described in detail again below. For details, reference is instead made to the above description. Furthermore, reference is made to the possibility of combining features of two or more of the embodiments described here.

[0076] One possible variant is the use of vertical components 120 or LEDs, which, in contrast to horizontal components 120, can be electrically contacted on opposite sides.

[0077] For illustration, Figures 10 and 11 show the provision of a further transfer arrangement 100 using lateral sectional views. The procedure is as described above, i.e. providing an initial arrangement 105 with a base substrate 115, components 120 or semiconductor bodies 121, layer stacks 130 and a sacrificial layer 160, and connecting the initial arrangement 105 to a carrier substrate 110 using an adhesive 170, so that the arrangement shown in Figure 10 is present. Deviating from the procedure described above, only one of the layer stacks 130 with the wetting layer 149, melt layer 141, dewetting layer 131 and heat dissipation layer 147 is arranged on the semiconductor bodies 121 of the components 120. The semiconductor bodies 121 may also have smaller lateral dimensions and, viewed in plan view, a less elongated rectangular shape.

[0078] In this regard, Figures 12 and 13 show corresponding top views of the initial arrangement 105 prior to bonding to the carrier substrate 110, in Figure 12 without the sacrificial layer 160 and in Figure 13 including the sacrificial layer 160 shown hatched. In this embodiment too, the sacrificial layer 160 partially covering the base substrate 115, the semiconductor bodies 121 and layer stacks 130 has openings 161 in the region of the layer stacks 130, via which openings the heat dissipation layers 147 of the layer stacks 130 are partially exposed. After bonding the initial arrangement 105 to the carrier substrate 110, the adhesive 170 can therefore adjoin the heat dissipation layers 147 at these locations (cf. Figure 10).

[0079] Subsequently, the above-explained removal of the base substrate 115 and removal of the sacrificial layer 160 take place. To provide the transfer arrangement 100 shown in Figure 11, a contact layer 151 is subsequently formed on each of the semiconductor bodies 121 on the side facing away from the carrier substrate 100. For the contact layers 151, a design made of a transparent electrically conductive oxide (TCO) such as ITO (indium tin oxide) can be considered. In this design, the components 120 of the transfer arrangement 100 of Figure 11 are vertical components 120 or LEDs, which can be electrically contacted on opposite sides, i.e. on the one hand via a contact layer 151 and on the other hand via a wetting layer 149 which can be used as a further contact layer.The wetting layer 149 can serve as an anode and the contact layer 151 can serve as a cathode ( or vice versa ) .

[0080] In the transfer arrangement 100 of Figure 11, the layer stacks 130 have the same design as in the transfer arrangement 100 of Figure 4. Accordingly, the transfer of a component 120 to a target substrate 117, which is not shown and is carried out by irradiating the transfer arrangement 100 with laser radiation 200, can take place in a manner corresponding to Figures 7 to 9. Here, too, the molten metal 142 is transferred together with the component 120 to the target substrate 117. For the transfer, the laser radiation 200 is emitted through the transparent carrier substrate 110 and the transparent adhesive 170 in the direction of the layer stack 130 associated with the relevant component 120 (cf. additionally Figure 15).

[0081] A further variant is the use of layer stacks 130 with a different structure. This is the case with the transfer arrangement 100 shown in a lateral sectional view in Figure 14, which, corresponding to the transfer arrangement 100 of Figure 11, has vertical components 120 or LEDs. In contrast to Figure 11, each of the layer stacks 130 of Figure 14 comprises, starting from a corresponding semiconductor body 121, a superimposed arrangement of a dewetting layer 132, a melt layer 141 made of a melt metal 142 and a heat dissipation layer 147. The dewetting layer 132 can be electrically conductive or made of a transparent electrically conductive oxide such as ITO. As a result, the dewetting layers 132 can simultaneously be used as contact layers of the respective components 120.

[0082] The transfer arrangement 100 of Figure 14 can be provided in the manner described above. For this purpose, an initial arrangement 105 with a base substrate 115, components 120 or semiconductor bodies 121, layer stacks 130 and a sacrificial layer 160 is produced, which can be done by appropriate growth, coating and structuring processes, the initial arrangement 105 is connected to a carrier substrate 110 by means of adhesive 170, the base substrate 115 and the sacrificial layer 160 are removed, and contact layers 151 are formed (not shown).

[0083] Figures 15 to 17 illustrate a transfer of a component 120 using the transfer arrangement 100 of Figure 14 using lateral sectional views. Here, the transfer arrangement 100, as shown in Figure 15, is arranged over a target substrate 117, and in the region of the component 120 to be transferred and the layer stack 130 associated with the component, a laser radiation 200 is emitted in the direction of the relevant layer stack 130 through the transparent carrier substrate 110 and the transparent adhesive 170. The laser radiation 200 can thus impinge on the heat-dissipating layer 147 of the layer stack 130 and be absorbed by it, heating it up. The heat dissipation layer 147 can then dissipate a corresponding heat to the melt layer 141 (which in the present embodiment is adjacent to the heat dissipation layer 147), so that its melt metal 142 is melted and liquefied.

[0084] This results, as shown in Figure 16, in increasing dewetting of the liquid molten metal 142 from the dewetting layer 132 and thus in detachment of the molten metal 142 from the dewetting layer 132, whereas the heat dissipation layer 147 is or remains wetted with the molten metal 142 and the molten metal 142 adheres to the heat dissipation layer 147. In this sense, the heat dissipation layer 147 not only serves to heat and melt the molten layer 141, but simultaneously acts as a wetting layer. The process shown in Figure 16 is based on the fact that the heat dissipation and wetting layer 147 provides a greater surface energy and thus a higher wetting force with respect to the liquid molten metal 142 than the dewetting layer 132.

[0085] The dewetting and detachment of the molten metal 142 from the dewetting layer 132 results in the respective component 120 being separated from the carrier substrate 110 and thus being able to fall toward or onto the target substrate 117, as shown in Figure 17. Even during the dewetting, the component 120 can sink slightly toward the target substrate 117 (see Figure 16). The movement or falling movement of the component 120 can be caused by gravity and an impulse action pushing the component 120 toward the target substrate 117 due to the dewetting of the molten metal 142.

[0086] In the transfer arrangement 100 of Figure 14, the dewetting layer 132 is arranged at a greater distance from, and thus further away from, the carrier substrate 110 in each of the layer stacks 130 than the melt layer 141. This has the consequence that, during the transfer of the component 120, the melt metal 142 remains on the carrier substrate 110, and the dewetting layer 132 remains on the component 120 or is transferred together with it to the target substrate 117 (see Figure 17). As stated above, the dewetting layer 132 can be used as a contact layer for electrically contacting the component 120.

[0087] As shown in Figure 17, the component 120 transferred onto the target substrate 117 is positioned on the target substrate 117 in such a way that the contact layer 151 faces the target substrate 117. In this context, it is possible for the target substrate 117 to have a contact surface at the location of the component 120, wherein the contact layer 151 and the contact surface are electrically connected to one another via an electrically conductive adhesive material (arranged on the target substrate 117 before transfer), for example an electrically conductive adhesive (not shown).

[0088] In Figure 15, to the left of the component 120 to be transferred, a free space is again indicated, in the location of which a (further) component 120 may have previously been present. This component 120 may have been transferred to a different location on the target substrate 117 before the component 120 transferred according to the sequence of Figures 15 to 17.

[0089] The variant described above can be applied in a corresponding manner with respect to horizontal components 120 or LEDs by providing two layer stacks 130 on components 120 or semiconductor bodies 121 (not shown), as shown in Figures 1 to 4. This applies equally to the embodiments explained below.

[0090] Figure 18 shows a side sectional view of a transfer arrangement 100 with a further variant of layer stacks 130. The transfer arrangement 100 has, in accordance with the embodiment of Figure 14, vertical components 120 or LEDs. In contrast to Figure 14, each of the layer stacks 130 of Figure 18 comprises, starting from a corresponding semiconductor body 121, a superimposed arrangement of a contact layer 153, a dewetting layer 133, a melt layer 141 made of a melt metal 142 and a heat dissipation layer 147. The contact layer 153 can be electrically conductive or made of a transparent electrically conductive oxide such as ITO. The dewetting layer 133 can be an oxide layer, for example an SiO2 layer, or a polymer layer. The melting metal 142 can be tin as stated above, or another metal such as aluminum. For providing the transfer assembly of Figure

[0091] 18, the procedure can be as described above, i.e. providing an initial arrangement 105 with a base substrate 115, components 120 or semiconductor bodies 121, layer stacks 130 and a sacrificial layer 160, which can be carried out by corresponding growth, coating and structuring processes, subsequently connecting the initial arrangement 105 by means of adhesive 170 to a carrier substrate 110, subsequently removing the base substrate 115 and the sacrificial layer 160, and subsequently forming contact layers 151 (not shown).

[0092] Figures 19 to 22 show a transfer of a component 120 followed by a further process step using the transfer arrangement 100 of Figure 18 using lateral sectional views. This includes, as shown in Figure

[0093] 19, positioning of the transfer arrangement 100 over a target substrate 117, and emitting a laser radiation 200 in the region of the component 120 to be transferred through the carrier substrate 110 and the adhesive 170 in the direction of the layer stack 130 assigned to the component 120. As a result, melting and liquefaction of the molten metal 142 can be effected in the manner described above, ie by absorption of the laser radiation 200 in the heat dissipation layer 147 and heating of the melt layer 141 via the heat dissipation layer 147.

[0094] This leads, as shown in Figure 20, to increasing dewetting and thus detachment of the molten metal 142 from the dewetting layer 133, whereas the heat-dissipation layer 147 (which also serves as a wetting layer) is or remains wetted with the molten metal 142, and the molten metal 142 adheres to the heat-dissipation layer 147. This is based on the fact that the heat-dissipation layer 147 provides a greater surface energy and thus a higher wetting force with respect to the molten metal 142 than the dewetting layer 133.

[0095] By dewetting and detaching the molten metal 142 from the dewetting layer 133, the respective component 120 is separated from the carrier substrate 110 so that it can fall onto the target substrate 117, as shown in Figure 21. In this process, the dewetting layer 133 is transferred to the target substrate 117 together with the component 120 and the contact layer 153. Even during the dewetting process, the component 120 may sink slightly toward the target substrate 117 (see Figure 20). The movement or falling movement of the component 120 can be caused by gravity and a momentum effect caused by the dewetting of the molten metal 142.

[0096] Following the transfer of the component 120, as shown in Figure 22, the dewetting layer 133 is removed. In this way, the contact layer 153 is exposed. As a result, the component 120 can be electrically contacted at this point. Figure 19 also shows a free space to the left of the component 120 to be transferred, in the place of which a (further) component 120 may have previously been present. This component 120 may have been transferred to a different location on the target substrate 117 before the component 120 transferred according to the sequence of Figures 19 to 21.

[0097] A further variant consists in connecting an output arrangement 105 to a carrier substrate 110 using a different connection technique instead of gluing.

[0098] For illustration purposes, Figures 23 to 25 show the provision of a further transfer arrangement 100 using lateral sectional views. In this case, an initial arrangement 105 shown in Figure 23 is first provided, which has a base substrate 115, a plurality of components 120 or semiconductor bodies 121 arranged on the base substrate 115, and a layer stack 130 on each of the semiconductor bodies 121. This can be done by appropriate growth, coating and structuring processes. In this case, the base substrate 115 can be a growth substrate on which a semiconductor layer sequence can be grown epitaxially and which can subsequently be structured into the semiconductor bodies 121. Seen in a plan view of the initial arrangement 105, an embodiment corresponding to Figure 12 can be present.

[0099] The layer stacks 130 shown in Figure 23 each comprise, starting from a corresponding semiconductor body 121, a superimposed arrangement of a dewetting layer 132, a melt layer 141 made of a melt metal 142, a heat dissipation layer 147 and a connecting layer 180. The dewetting layer 132 can be electrically conductive or made of a transparent electrically conductive oxide such as ITO, and can therefore also be used as a contact layer of an associated component 120. The melt metal 142 can be aluminum, for example. The heat dissipation layer 147 can be made of a metallic material such as titanium, or else of platinum or nickel, as stated above. The connecting layer 180 is suitable for carrying out a bonding or Wafer bonding process for establishing a connection to a carrier substrate 110 (also shown in Figure 23).The connecting layer 180 can be, for example, a SiO2 layer. Thus, the connecting layer 180, corresponding to the carrier substrate 110, can be transparent to laser radiation 200.

[0100] The initial arrangement 105 of Figure 23 further comprises an optional passivation layer 181 formed on the semiconductor bodies 121. The passivation layer 181 covers lateral sidewalls of the semiconductor bodies 121 as well as, at the edge, a portion of the sides of the semiconductor bodies 121 facing away from the base substrate 115. The passivation layer 181 can be an SiO2 layer. The provision of a passivation layer 181 on semiconductor bodies 121 can also be used for configurations in other figures.

[0101] To produce the transfer arrangement 100, the initial arrangement 105 is then connected to the carrier substrate 110, as shown in Figure 24. As already mentioned above, a bonding or wafer bonding process is carried out so that the carrier substrate 110 and the connecting layers 180 of the layer stack 130 form corresponding connections. Before the bonding process, the sides or surfaces of the connecting layers 180 and the carrier substrate 110 to be connected can be activated by carrying out a CMP process (chemical mechanical polishing). The bonding process can be a fusion bonding process. If both the carrier substrate 110 and the connecting layers 180 are made of SiO2, this is a glass-glass fusion bonding process.The bonding process is carried out at a process temperature that is lower than the melting temperature of the molten metal 142 in order to prevent melting of the molten metal 142 during this process. For example, if the molten metal 142 is aluminum with a melting temperature of 660°C, the bonding process can be carried out at a temperature of 450°C.

[0102] To prepare the transfer arrangement 100, the base substrate 115 is subsequently removed, as shown in Figure 25, for example, by means of a laser lift-off process and, if appropriate, subsequent grinding. A further step is the formation of a contact layer 151 on each of the semiconductor bodies 121, i.e., on the side of the semiconductor bodies 121 facing away from the carrier substrate 110. The transfer arrangement 100 thus formed has, in addition to the carrier substrate 110 and the components 120 arranged laterally next to one another, a connection structure 101 via which the components 120 are connected to the carrier substrate 110. The connection structure 101 comprises the layer stacks 130 connected to the carrier substrate 110.

[0103] Figures 26 to 28 illustrate, using lateral sectional views, the transfer of a component 120 using the transfer arrangement 100 of Figure 25. This includes, as shown in Figure 26, arranging the transfer arrangement 100 over a target substrate 117 and emitting laser radiation 200 in the region of the component 120 to be transferred, through the carrier substrate 110 in the direction of the layer stack 130 associated with the component 120. The laser radiation 200 can pass not only through the carrier substrate 110, but also through the transparent connecting layer 180, and consequently impinge on the heat-dissipating layer 147 of the layer stack 130 and be absorbed by it, heating it. In this way, heating of the melt layer 141 via the heat dissipation layer 147 can be achieved so that its melt metal 142 is melted and liquefied.

[0104] This results, as shown in Figure 27, in increasing dewetting and thus detachment of the liquid molten metal 142 from the dewetting layer 132, whereas the heat-dissipation layer 147 (which again simultaneously serves as a wetting layer) is or remains wetted with the molten metal 142 and the molten metal 142 adheres to the heat-dissipation layer 147. This behavior is based on the fact that the heat-dissipation layer 147 provides a greater surface energy and thus a higher wetting force with respect to the liquid molten metal 142 than the dewetting layer 132.

[0105] By dewetting and detaching the molten metal 142 from the dewetting layer 132, the respective component 120 is separated from the carrier substrate 110, with the result that it can fall onto the target substrate 117, as shown in Figure 28. Even during dewetting, the component 120 can sink slightly toward the target substrate 117 (see Figure 27). The movement or falling movement of the component 120 can be caused by gravity and an impulse effect due to the dewetting of the molten metal 142.

[0106] In Figure 26, a free space is again indicated to the left of the component 120 to be transferred, in the location of which a (further) component 120 may have previously been present. This component 120 may have been transferred to a different location on the target substrate 117 before the component 120 transferred according to the sequence of Figures 26 to 28.

[0107] The above-described embodiment, realized using a bonded connection, can be used in a corresponding manner with respect to horizontal components 120 or LEDs by providing, as shown in Figure 4, two layer stacks 130 per component 120 or semiconductor body 121 (not shown). Furthermore, designs corresponding to previously explained embodiments can be provided for the layer stacks 130, apart from the connecting layer 180 used for the connection.

[0108] For illustration, Figure 29 shows a side sectional view of a transfer arrangement 100 with layer stacks 130, which are implemented similarly to the embodiment of Figure 18. The layer stacks 130 comprise, starting from a corresponding semiconductor body 121, a superimposed arrangement of a contact layer 153, a dewetting layer 133, a melt layer 141 made of a melt metal 142, a heat dissipation layer 147 and a connection layer 180. The procedure for producing the transfer arrangement 100 can be as stated above, i.e. providing an initial arrangement 105 with a base substrate 115, components 120 or Semiconductor bodies 121 and layer stacks 130, subsequent connection of the initial arrangement 105 to a carrier substrate 110 by performing a bonding process, and subsequent removal of the base substrate 115 and formation of contact layers 151.

[0109] A transfer of a component 120 to a target substrate 117 (not shown) performed by irradiating the transfer arrangement 100 of Figure 29 with laser radiation 200 can be carried out in a manner corresponding to Figures 26 to 28, wherein, similar to the process in Figures 19 to 21, the dewetting layer 133 and contact layer 153 are transferred together with the component 120 to the target substrate 117. Subsequently, the dewetting layer 133 can be removed in order to expose the contact layer 153 (cf. Figures 21 and 22).

[0110] Figure 30 shows a side sectional view of a transfer arrangement 100 with layer stacks 130, which are implemented similarly to the embodiment of Figure 4. The layer stacks 130 comprise, starting from a corresponding semiconductor body 121, a wetting layer 149, a melt layer 141 made of a melt metal 142, a dewetting layer 131, a heat dissipation layer 147 and additionally a connecting layer 180. The procedure for producing the transfer arrangement 100 can be as stated above, i.e. providing an initial arrangement 105 with a base substrate 115, components 120 or Semiconductor bodies 121 and layer stacks 130, subsequent connection of the initial arrangement 105 to a carrier substrate 110 by performing a bonding process, as well as removal of the base substrate 115 and formation of contact layers 151.

[0111] A transfer of a component 120 to a target substrate 117, not shown, using the transfer arrangement 100 of Figure 30, can be carried out in such a way that, similar to the process in Figures 7 to 9, the wetting layer 149 and the melting metal 142 are transferred to the target substrate 117 together with the component 120.

[0112] In the following, a further variant for connecting an output arrangement 105 to a carrier substrate 110 is shown.

[0113] Figures 31 to 33 show, based on lateral sectional views, the provision of a further transfer arrangement 100. In this case, an initial arrangement 105 shown in Figure 31 is first provided, which has a base substrate 115, a plurality of components 120 or semiconductor bodies 121 arranged on the base substrate 115, and a layer stack 130 on each of the semiconductor bodies 121. This can be carried out by appropriate growth, coating and structuring processes. In this case, the base substrate 115 can again be a growth substrate on which a semiconductor layer sequence can be grown epitaxially and which can subsequently be structured into the semiconductor bodies 121. Seen in a plan view of the initial arrangement 105, an embodiment corresponding to Figure 12 can be present.

[0114] The layer stacks 130 shown in Figure 31 each comprise, starting from a corresponding semiconductor body 121, a superimposed arrangement of a dewetting layer 132, a melt layer 141 made of a melt metal 142, and a heat dissipation layer 147. Furthermore, a layer of a connecting solder 190 is arranged on the layer stacks 130 or their heat dissipation layers 147. The connecting solder 190 can optionally be assigned to the layer stacks 130. The dewetting layer 132 can be electrically conductive or made of a transparent, electrically conductive oxide such as ITO, and can therefore be used as a contact layer of a corresponding component 120. The melt metal 142 is a low-melting solder such as tin. The heat dissipation layer 147 may be formed of a metallic material such as titanium, platinum or nickel.The connecting solder 190 is a high-melting solder having a high melting temperature. The melting temperature of the connecting solder 190 is higher, or much higher, than the melting temperature of the molten metal 142. The connecting solder 190 can be, for example, a gold-tin alloy.

[0115] The connecting solder 190 serves to establish a connection to a carrier substrate 110 (also shown in Figure 31) by performing a soldering process. For this purpose, a wettable layer 111 is formed on the carrier substrate 110 or on a main side of the carrier substrate 110 intended for connection, as shown in Figure 31. The wettable layer 111 is a metallic layer, for example constructed in the form of a layer stack (not shown) made of titanium, platinum, or gold. The wettable layer 111 is suitable for wetting with the connecting solder 190.

[0116] To provide the transfer arrangement 100, the starting arrangement 105 is then connected to the carrier substrate 110, as shown in Figure 32. As already mentioned above, a soldering process is carried out in which the connecting solder 190 present on the layer stacks 130 is melted, wetting both the wettable layer 111 and the heat-dissipating layers 147 of the layer stacks 130, and as a result, the layer stacks 130 are connected to the wettable layer 111 arranged on the carrier substrate 110 via the connecting solder 190. The soldering process is carried out in such a way that the melting metal 142 of the melting layers 141 does not melt during this process. Furthermore, the heat dissipation layers 147 serve as a solder barrier during the soldering process, preventing molten connecting solder 190 from reaching the melt layers 141.

[0117] To produce the transfer arrangement 100, the base substrate 115 is then removed, as shown in Figure 33, for example by means of a laser lift-off process and, if appropriate, subsequent grinding. Furthermore, a contact layer 151 is formed on each of the semiconductor bodies 121, i.e., on the side of the semiconductor bodies 121 facing away from the carrier substrate 110. The transfer arrangement 100 thus formed has, in addition to the carrier substrate 110 and the components 120 arranged laterally next to one another, a connection structure 101 via which the components 120 are connected to the carrier substrate 110. The connection structure 101 comprises the layer stacks 130, the connection solder 190 located in the region of the layer stacks 130 and the wettable layer 111 arranged on the carrier substrate 110.

[0118] Figures 34 to 36 illustrate a transfer of a component 120 using the transfer arrangement 100 of Figure 33 using lateral sectional views. This comprises, as shown in Figure 34, positioning the transfer arrangement 100 over a target substrate 117, and emitting laser radiation 200 in the region of the component 120 to be transferred, through the carrier substrate 110 in the direction of the layer stack 130 associated with the component 120. In contrast to the previously described embodiments, the laser radiation 200 does not impinge on the heat-dissipating layer 147 of the layer stack 130 in order to be absorbed by the heat-dissipating layer 147. Instead, the laser radiation 200 strikes the wettable layer 111 in the region of the relevant layer stack 130 and can be absorbed by it while heating it.Corresponding heat can be transferred from the wettable layer 111 to the connecting solder 190 present in the region of the layer stack 130, and from there to the heat-dissipating layer 147, heating the latter. The heat-dissipating layer 147 can thus transfer corresponding heat to the molten layer 141, so that its molten metal 142 is melted and liquefied. The high melting temperature of the connecting solder 190, which is higher than that of the molten metal 142, ensures that the molten metal 142, but not the connecting solder 190, is melted during this process.

[0119] The melting of the molten metal 142 leads, as shown in Figure 35, to increasing dewetting and thus detachment of the liquid molten metal 142 from the dewetting layer 132, whereas the heat-dissipation layer 147 (which also serves as a wetting layer) is or remains wetted with the molten metal 142, and the molten metal 142 adheres to the heat-dissipation layer 147. This is based on the fact that the heat-dissipation layer 147 provides a greater surface energy and thus a higher wetting force with respect to the liquid molten metal 142 than the dewetting layer 132.

[0120] By dewetting and detaching the molten metal 142 from the dewetting layer 132, the respective component 120 is separated from the carrier substrate 110, so that it can fall onto the target substrate 117, as shown in Figure 36. Even during the dewetting process, the component 120 can sink slightly toward the target substrate 117 (see Figure 35). The movement or falling movement of the component 120 can be caused by gravity and a momentum effect due to the dewetting of the molten metal 142.

[0121] The above-described embodiment realized using a soldered connection can be used in a corresponding manner with respect to horizontal components 120 or LEDs by providing two layer stacks 130 per component 120 or semiconductor body 121 (not shown), as shown in Figure 4. Furthermore, designs corresponding to the previously explained embodiments can be considered for the layer stacks 130 provided with the connecting solder 190. For example, corresponding to the embodiment using a bonded connection, layer stacks 130 with a structure corresponding to Figures 29 and 30 can be realized.

[0122] In addition to the embodiments described above and illustrated in the figures, further embodiments are conceivable which may include further modifications and / or combinations of features.

[0123] In this sense, the above information on materials can be considered as examples, and other materials may be used. The same applies to the above numerical data.

[0124] For example, it is possible to form an electrically insulating dewetting layer from A12O3 instead of SiO2.

[0125] Furthermore, the described embodiments of a transfer arrangement and a method are not limited to components in the form of LEDs or pLEDs, but can be applied accordingly to other components. Possible examples of other components include laser diodes or laser diode chips, micromechanical components or MEMS (microelectromechanical systems) and pMEMS, detector components or detector chips, as well as ICs (integrated circuits) and pICs.

[0126] Although the invention has been illustrated and described in detail by means of preferred embodiments, the invention is not restricted by the disclosed examples and other variations can be derived therefrom by a person skilled in the art without departing from the scope of the invention. LIST OF REFERENCE SYMBOLS Transfer arrangement Connection structure Starting arrangement Carrier substrate Wettable layer Base substrate Target substrate Component Semiconductor body Active zone Edge Layer stack Dewetting layer Dewetting layer Dewetting layer Melting layer Melting metal Heat dissipation layer Wetting layer Contact layer Contact layer Sacrificial layer Opening Air gap Adhesive Connection layer Passivation layer Connection solder Laser radiation

Claims

PATENT CLAIMS 1. A method for transferring a component (120), comprising: Providing a transfer arrangement (100) comprising the component (120), a carrier substrate (110) and a connecting structure (101), wherein the carrier substrate (110) is transparent to laser radiation (200), wherein the component (120) is connected to the carrier substrate (110) via the connecting structure (101), and wherein the connecting structure (101) has at least one layer stack (130) with a melt layer (141) made of a melt metal (142) and a dewetting layer (131, 132, 133) adjacent to the melt layer (141); Positioning the transfer assembly (100) over a target substrate (117); and Emitting laser radiation (200) in the direction of the at least one layer stack (130) through the carrier substrate (110) so that melting of the molten metal (142) of the molten layer (141) and dewetting of the molten metal (142) from the dewetting layer (131, 132, 133) is caused, and thereby the component (120) is separated from the carrier substrate (110) and transferred (117) to the target substrate.

2. The method according to claim 1, wherein the dewetting layer (131) of the at least one layer stack (130) has a smaller distance to the carrier substrate (110) than the melt layer (141), so that during the transfer of the component (120) the dewetting layer (131) on the carrier substrate (110) and the melt metal (142) on the component (120) remains .

3. The method according to claim 1, wherein the dewetting layer (132, 133) of the at least one layer stack (130) has a greater distance from the carrier substrate (110) than the melt layer (141), so that when the component (120) is transferred, the melt metal (142) remains on the carrier substrate (110) and the dewetting layer (132, 133) remains on the component (120).

4. The method according to claim 3, wherein the dewetting layer (133) is removed after transferring the component (120).

5. The method according to any one of the preceding claims, wherein the dewetting layer (131; 132) is one of the following: an oxide layer; a transparent electrically conductive oxide layer.

6. Method according to one of the preceding claims, wherein the at least one layer stack (130) has a heat-dissipating layer (147) which is heated by the emission of the laser radiation (200) and thereby dissipates heat to the melt layer (141) for melting the melt metal (142).

7. Method according to one of the preceding claims, wherein the at least one layer stack (130) has a wetting layer (147, 149) which is wetted by the molten metal (142) which is molten thereon.

8. Method according to one of the preceding claims, wherein the connecting structure (101) has an adhesive (170) which is transparent to the laser radiation (200), via which the at least one layer stack (130) with is connected to the carrier substrate (110).

9. The method according to any one of claims 1 to 7, wherein the at least one layer stack (130) is connected to the carrier substrate (110) via a bond connection.

10. The method according to one of claims 1 to 7, wherein a wettable layer (111) is arranged on the carrier substrate (110), wherein the at least one layer stack (130) is connected to the wettable layer (111) via a connecting solder (190), and wherein the connecting solder (190) has a higher melting temperature than the molten metal (142), so that by emitting the laser radiation (200) only the molten metal (142) and not the connecting solder (190) is melted.

11. A method according to any one of the preceding claims, wherein providing the transfer arrangement comprises: Providing an output arrangement (105) comprising the component (120) and the at least one layer stack (130); and Connecting the output arrangement (105) to the carrier substrate (110).

12. The method according to claim 11, wherein the starting arrangement (105) has a base substrate (115) on which the component (120) is arranged, and wherein the base substrate (115) is removed after the starting arrangement (105) has been connected to the carrier substrate (110).

13. Method according to one of claims 11 or 12, wherein the output arrangement (105) comprises a component (120) and a sacrificial layer (160) adjoining the at least one layer stack (130) with an opening (161) in the region of the at least one layer stack (130), wherein the starting arrangement (105) is connected to the carrier substrate (110) by adhesive bonding, wherein the adhesive is carried out using an adhesive (170) that is transparent to the laser radiation, wherein the adhesive adjoins the carrier substrate (110), the sacrificial layer (160) and the at least one layer stack (130) in the region of the opening (161), but not the component (120), and wherein the sacrificial layer (160) is removed after the adhesive bonding.

14. The method according to one of claims 11 or 12, wherein the provision of the output arrangement (105) is carried out in such a way that the at least one layer stack (130) has a connecting layer (180), and wherein a bonding process for connecting the output arrangement (105) to the carrier substrate (110) is carried out, in which bonding process the connecting layer (180) is connected to the carrier substrate (110).

15. The method according to one of claims 11 or 12, wherein the provision of the starting arrangement (105) takes place in such a way that a connecting solder (190) is arranged on the at least one layer stack (130), wherein a wettable layer (111) is arranged on the carrier substrate (110), and wherein a soldering process for connecting the starting arrangement (105) to the carrier substrate (110) is carried out, in which soldering process the at least one layer stack (130) is connected to the wettable layer (111) arranged on the carrier substrate (110) via the connecting solder (190).

16. The method according to any one of the preceding claims, wherein the component (120) has lateral dimensions in the micrometer range and / or wherein the component (120) is one of the following: optoelectronic component; micromechanical component; sensor component; integrated circuit.

17. The method according to any one of the preceding claims, wherein the connecting structure (101) has, with respect to the component (120), a plurality of layer stacks (130) with the melt layer (141) and the dewetting layer (131, 132, 133) arranged laterally next to one another, wherein the laser radiation (200) is emitted through the carrier substrate (110) in the direction of the plurality of layer stacks (130), such that in the plurality of layer stacks (130), melting of the melt metal (142) and dewetting of the melted melt metal (142) from the dewetting layer (131, 132, 133) is caused, in order to thereby separate the component (120) from the carrier substrate (110) and to transfer it to the target substrate (117).

18. Method according to one of the preceding claims, wherein the transfer arrangement (100) comprises a plurality of components (120) which are connected to the carrier substrate (110) via the connecting structure (101), wherein the connecting structure (101) comprises, with respect to each of the components (120), at least one layer stack (130) with the melt layer (141) and the dewetting layer (131, 132, 133), and wherein a plurality of components (200) are transferred to the target substrate (117).

19. Transfer arrangement (100) for transferring a component (120), wherein the transfer arrangement (100) comprises the component (120), a carrier substrate (110) and a connecting structure (101), wherein the carrier substrate (110) is transparent to laser radiation (200), wherein the component (120) is connected to the carrier substrate (110) via the connecting structure (101), wherein the connecting structure (101) comprises at least one layer stack (130) with a melting layer (141) made of a molten metal (142) and a dewetting layer (131, 132, 133) adjacent to the molten layer (141), and wherein the transfer arrangement (100) is designed such that by emitting laser radiation (200) in the direction of the at least one layer stack (130) through the carrier substrate (110), melting of the molten metal (142) of the molten layer (141) and dewetting of the molten molten metal (142) from the dewetting layer (131, 132, 133) can be brought about, in order to thereby separate the component (120) from the carrier substrate (110) and to transfer it to a target substrate (117).

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