Organohalogen precursors for particle beam-induced mask repair

Abstract

The present invention relates, inter alia, to a method of processing a lithography object comprising providing a first etch gas comprising at least one organic halogen-containing component, wherein a molecule of the at least one organic halogen-containing component further comprises: at least two carbon atoms and at least three different elements; and directing a particle beam onto the lithography object to induce an etching operation on the lithography object.

Description

[0001] Organohalogen precursors for particle beam-induced mask repair

[0002] This application claims priority to German patent application DE io 2024 104446.2 titled “Organohalogen-Prakursoren zur teilchenstrahlinduzierten Maskenreparatur” filed on 16 February 2024 at the German Patent and Trademark Office and which is hereby incorporated by reference in its entirety.

[0003] 1. Technical field

[0004] The present invention relates to a method and a device for processing of a lithography object, to a computer program and to a processed lithography object.

[0005] 2. Technical background

[0006] Processing of a lithography mask (also referred to herein as mask) by means of a particle beam has long been known. For example, the particle beam may comprise a beam of particles that are charged and / or have a mass, for example an electron beam, ion beam and / or a photon beam, which is provided in a defined manner on the mask for the purpose of analysing and / or processing the mask. Providing the particles of the particle beam on the mask allows various interactions to be generated, which can enable various processing operations on the mask. Particle beam-based processing of a mask may therefore comprise a very wide variety of methods.

[0007] For example, the particle beam-based processing operation may comprise a particle beam-induced etching and / or deposition operation, in which there is local removal or creation of a mask material. This may comprise, for example, focused electron beam- induced etching (FEBIE) and / or deposition, where focused electron beam-induced etching can be effected, for example, in the presence of an etch gas, called a precursor. Furthermore, a defined photon irradiation of the mask may also be required e.g. for processing the mask (e.g. in the case of a laser-induced reaction). Examining a mask using a particle beam may for example comprise an image of the mask being recorded with the aid of the particles in the particle beam (e.g. as occurs with the aid of an electron beam in the case of a scanning electron microscope (SEM)). Particle beam-based processing of a mask using a particle beam is now used for various applications in industry. In some applications, it may be necessary to remove excess material from pattern elements of masks (e.g. transmitted and / or reflective, absorbing and / or phase-shifting masks). In other applications, it may also be necessary to remove foreign bodies from the surface, in which case it is also additionally or alternatively possible here in some cases to use a tip of a scanning probe microscope.

[0008] For example, in the semiconductor industry, increasingly smaller structures are being produced on a wafer in order to ensure an increase in integration density. Among the methods used here for the production of the structures are lithography methods which image these structures on the wafer. The lithography methods may include, for example, photolithography, ultraviolet (UV) lithography, DUV lithography (i.e. lithography in the deep ultraviolet spectral region), EUV lithography (i.e. lithography in the extreme ultraviolet spectral region), x-ray lithography, nanoimprint lithography, etc. Masks are usually used here as lithography objects (e.g. photomasks, exposure masks, reticles, stamps in the case of nanoimprint lithography, etc.), which comprise a pattern in order to image the desired structures onto a wafer, for example.

[0009] As the integration density increases, so do the demands in respect of the mask production (e.g. as a result of the accompanying reduction in the structure dimensions on the mask or as a result of the greater material requirements in lithography). Thus, mask production processes are becoming ever more complex, time-consuming and expensive. It is not always possible to avoid mask errors (e.g. defects). Typically, the mask defects are therefore repaired via particle beam-induced processing.

[0010] Furthermore, it may be necessary to examine masks using a particle beam, for example in the semiconductor industry. For example, the repair of mask errors may thus require image recordings of the mask errors or the repair location using a particle beam (e.g. for a high-resolution SEM image).

[0011] Such modern processes for processing a mask not only place high demands on the particle beam used for etching, for example, but also on the precursor used or the gas mixture used, in the presence of which the respective etching operation is executed.

[0012] The materials used in masks, especially in EUV masks, are constantly developing further, with addition of new materials. Furthermore, some of the etch gases that are currently already known do not yet lead to desired simple handling in all cases and / or do not support desired etching characteristics in all cases, especially in the case of new materials. Thus, some of the precursors currently used require comparatively complex storage. Other gases that are suitable for etching in principle, in turn, cannot even be sensibly used since they would break down explosively under shock, friction or agitation. There is therefore a need to provide new etch gases that are suitable for these materials.

[0013] US 2003 / 0000921 Ai describes a method of fabricating and repairing a mask without damage and an apparatus including a holder to mount a substrate; a stage to position the holder in a chamber; a pumping system to evacuate the chamber; an imaging system to locate an opaque defect in the substrate; a gas delivery system to dispense a reactant gas towards the defect; and an electron delivery system to direct electrons towards the opaque defect.

[0014] US 2023 / 0059730 Ai describes systems, methods, and apparatuses for atomic-scale materials processing based on electron beam induced etching assisted by remote plasma. A method may include placing the substrate into a low-pressure chamber to which an electron source is connected. The method may also include contacting the surface of the substrate with reactive particle fluxes produced by a remote plasma source connected to the low-pressure chamber. The remote plasma source may be fed with one or more chemical precursors for surface chemical functionalization of the surface of the substrate. The method may further include electron irradiation of the surface of the substrate with electrons via the electron source at a specified energy level to induce a surface chemical process on the surface of the substrate.

[0015] 3. Summary of the invention

[0016] The abovementioned object is at least partly achieved by the various aspects of the present invention, as described below.

[0017] A first aspect of the present invention relates to a method of processing a lithography object. The method may comprise providing a first etch gas comprising at least one organic halogen-containing component. The method may further comprise directing a particle beam onto the lithography object to induce an etching operation on the lithography object. In some examples, a molecule of the at least one organic halogen-containing component may further comprise at least two carbon atoms and / or at least three different elements.

[0018] The use of a first etch gas that includes at least one organic halogen-containing component can result in provision of a precursor which is chemically stable over a prolonged period of time (for example months to years) and has a sufficiently high vapour pressure in order to provide a sufficient concentration of the precursor at the site of the lithography object (for example via chemisorption and / or physisorption on the lithography object) even, for example, at low temperatures (e.g. -50°C - -30°C and / or even at room temperature). Furthermore, it is possible by virtue of coexistence of the precursor and the particle beam to achieve the effect that, if required, the processing of the lithography object can result in removal of material from the lithography object in a defined manner and as a volatile reaction product from the mask. For instance, a material of the lithography object can be etched.

[0019] Furthermore, etch gases including at least one organic halogen-containing component may have a higher (average) surface dwell time or higher probability of adhesion on the lithography object than, for example, nonpolar molecules, for example F2, Cl2, Br2, etc. This can contribute to more favourable etching conditions on the lithography object.

[0020] Use of an etch gas including at least one organic, halogen-containing component can also suppress spontaneous etching of the precursor of the lithography object and / or contribution to corrosion of the lithography object, by contrast with halogen-containing compounds (for example HC1, HF, HBr, NOF, N0C1, CIN02), which have higher reactivity and (chemical) instability. In this way, it is possible to prevent any risk of damage to the lithography object caused by spontaneous etching.

[0021] In addition, inventive provision of the first etch gas including at least one organic halogen-containing component can enable simplified storage of the etch gases (for example in a liquid state of matter). The risk of unwanted (gaseous and volatile) release of the etch gas can be suppressed in this way, and the risks to man and nature that emanate from the etch gas can be minimized.

[0022] An etch gas comprising at least the aforementioned component may also be provided on new materials for use with a lithography object for the purposes of improved etching characteristics. In this way, it is also possible to provide a repair operation for materials currently in development that may be used for production of a lithography object.

[0023] The use of an organic component is contrary to the prejudice that carbon should be avoided in particle beam-based processing since it is readily deposited and hence can lead to impurities on the object being processed. The inventors of the present invention have found that possible deposition of carbon, especially in the case of use of an organic halogen-containing component (e.g. organohalogen precursor), can be significantly reduced by adding at least one oxidizing gas. Additionally or alternatively, it is also possible to add small amounts of inorganic halogen precursors in order to prevent unwanted presence of carbon or to remove temporarily deposited carbon. For example, the etching of an (absorber) material may require chlorine, for which the use of an organohalogen precursor with chlorine maybe suitable. Addition of XeF2, for example, as additive gas can contribute to lowering any possible carbon content.

[0024] In some cases, the lithography object maybe a lithography mask.

[0025] The use of an organic halogen-containing component with at least two carbon atoms and / or at least three different elements may result in provision of a precursor with improved properties. The complex molecular structures can be tailored for specific etching applications. The presence of additional elements besides carbon and halogens (such as oxygen, sulfur, nitrogen etc.) can modify the reactivity, volatility, and / or surface adhesion properties of the precursor.

[0026] This molecular structure may provide better chemical stability over prolonged periods. This can enable easier storage and handling of the precursor.

[0027] The additional elements and complex structure may allow for higher vapor pressures at a given temperature. This can provide sufficient precursor concentration at the lithography object surface even at lower temperatures.

[0028] The presence of at least three different elements introduces the possibility of having predetermined breaking points in the molecule. This can lead to more controlled fragmentation when exposed to the particle beam, potentially improving etching efficiency and / or localization. An organic halogen-containing component with at least two carbon atoms and / or at least three different elements may allow strong dipole moments.

[0029] For example, a carbonyl group in compounds of the form R2C=0, where R is an organic residue, has a dipole moment of 2.9 D.

[0030] As a second example, hexachloroethane C13C-CC13has no dipole moment. By introducing a central carbonyl group: C13C-(C=O)-CC13(hexachloroacetone), the molecule acquires a dipole moment.

[0031] As in the above examples but also in general, by introducing additional elements into organic halogen compounds, for example in such a way that the organic halogencontaining component has at least two carbon atoms and / or at least three different elements, the dipole moment may be tailored to maximize adsorption to the lithography object, for example to a surface of the lithography object.

[0032] Stronger dipole moments may increase surface adhesion and / or dwell time of the molecules on the lithography object, potentially improving etching efficiency.

[0033] The additional elements, particularly oxygen-containing groups, may provide easier pathways for carbon removal, e.g., as C02, reducing unwanted carbon deposition during etching.

[0034] Such molecular structures may allow for lower beam currents to achieve fragmentation, potentially reducing damage to sensitive lithography object materials.

[0035] This may allow greater flexibility in designing precursor molecules tailored for specific lithography object materials and etching requirements, while potentially improving etch rates, selectivity, and precision.

[0036] The presence of at least three different elements in the molecule may allow for more diverse chemical properties and reactivity. This may enable fine-tuning of the etching process for specific materials and applications.

[0037] The method may include a molecule that comprises at least three different elements and at least one substructure with the empirical formula CaXbZc, wherein C denotes carbon and wherein a is larger than or equal to 2, and X is at least one halogen. The at least one halogen may comprise at least one of the following elements: F, Cl, Br, I. Z is an element or molecule.

[0038] The substructure with the empirical formula CaXbZcmay offer a balance between the halogen content necessary for etching and the presence of other elements that can modify the precursor's behavior. This may result in improved etch rates or selectivity.

[0039] Having at least two carbon atoms (a > 2) in the substructure may provide a more stable molecular framework. This may lead to better control over the fragmentation process during etching.

[0040] The flexibility in the choice of halogen (F, Cl, Br, or I) may allow for optimization of the etching process for different materials. Different halogens may offer varying degrees of reactivity and selectivity.

[0041] The presence of the Z element or molecule may introduce additional functionality to the precursor. Depending on the nature of Z, it may influence properties such as vapor pressure, surface adhesion, or the formation of volatile etch products.

[0042] This molecular structure may offer a good compromise between reactivity and stability. It may be reactive enough to effectively etch the target material when activated by the particle beam, while remaining stable enough for storage and handling.

[0043] The combination of different elements in this structure may lead to unique fragmentation patterns when exposed to the particle beam. This may result in the formation of highly reactive species that can enhance the etching process.

[0044] The molecule may consist of the at least one substructure.

[0045] This may have the advantage that the molecule is smaller and / or may be easier to produce.

[0046] Z may comprise at least one of the following: O, S, S02, P, N02, and / or N. Oxygen (O) may enhance the formation of volatile etch products, potentially improving etch rates and cleanliness. Sulfur (S) or sulfur dioxide (S02) groups may enhance reactivity and / or selectivity of the etching process. For example, S02may enhance a cross-section for electron capturing, for example from the particle beam. Phosphorus (P) may allow versatility of etching characteristics. Nitrogen (N) may influence the etching process, for example by influencing the molecule's polarity and / or surface interactions. The above choices for Z may allow capturing of carbon of the molecule.

[0047] The etch gas may reach the lithography object as a neutral gas. In addition or alternatively, the etch gas may not be exposed to a plasma during the processing.

[0048] This may simplify the method and / or the devices required to carry out the method. For example, the etch gas maybe guided to the site of reaction on the lithography object, for example, by means of a pipeline system. For example, one or more gas reservoirs (e.g., vessels) maybe provided in which the etch gas is stored (or at least a component thereof), and the etch gas is guided from the one or more gas reservoirs via one or more tubes, pipelines, valves, and / or mass flow controllers to the lithography object. In some examples, apart from pressure and / or mass flow control, the etch gas may not be manipulated on its way to the lithography object. It may thus be activated only, e.g., after attaching to the surface of the lithography object, when interacting with the particle beam, e.g. a focused electron beam, enabling precise position control of the etching process.

[0049] The method may include a molecule where b is less than or equal to 7, less than or equal to 6, less than or equal to 5, less than or equal to 4, less than or equal to 3, less than or equal to 2, or 1.

[0050] Limiting the number of halogen atoms (represented by b) in the molecule may help control the reactivity of the precursor. A lower number of halogen atoms may result in a more controlled and selective etching process.

[0051] A molecule with fewer halogen atoms may be less likely to cause unwanted side reactions or damage to adjacent structures on the lithography object. This may lead to improved precision in the etching process. A lower value of b may lead to a more stable precursor molecule. This increased stability may improve the shelflife of the precursor and make it easier to handle and store.

[0052] A lower number of halogen atoms may influence the fragmentation pattern of the molecule when exposed to the particle beam. This could potentially lead to the formation of more specific reactive species, enhancing etching selectivity.

[0053] The molecule may comprise at least one of the following:

[0054] CCUF, CF2C1, COF, C02F,

[0055] CC14, triphosgene or bis(trichloromethyl) carbonate (C3C16O3), a sulfonyl halide, such as an aromatic, saturated, or unsaturated aliphatic sulfonyl halide, ethanesulfonyl fluoride (C2H5FO2S), methanesulfonyl chloride (CH3C102S), methanesulfonyl fluoride (CH3FO2S), phenylsulfonyl fluoride (PhF02S), pyridinesulfonyl fluoride (C5H4FNO2S), thiophenesulfonyl fluoride (C4H3FO2S2), cyanomethanesulfonyl chloride (C2H2C1NO2S), chloromethanesulfonyl chloride (C1CH2SO2C1), or trifluoromethanesulfonyl chloride (CF3SO2C1), CaXbY(2a+2-b), where X is any halide and ‘b’ is optionally greater than 1, a is optionally greater than and / or equal to 1 and Y is a non-metal, optionally a semimetal; a sulfenyl halide compound or selenenyl halide compound, trichloromethanesulfenyl chloride (CC13SC1), or chlorocarbonylsulfenyl chloride (CIC0SC1).

[0056] The use of one or several molecules as described above may offer several advantages. For example, the use of triphosgene or bis(trichloromethyl) carbonate may provide a high chlorine content, which may enhance etching efficiency for certain materials. Sulfonyl halides may offer a combination of sulfur and halogen atoms, which may lead to unique etching characteristics. The variety of sulfonyl halides (aromatic, saturated, or unsaturated aliphatic) may allow for fine-tuning of the precursor properties. Specific compounds like ethanesulfonyl fluoride or pyridinesulfonyl fluoride may provide a balance of organic structure and halogen content, potentially offering controlled reactivity. Molecules according to the stoichiometric formula CaXbY(2a+2-b) may enable optimization of the precursor for specific etching requirements. Sulfenyl halide or selenenyl halide compounds may introduce sulfur or selenium into the etching process, which may offer unique etching characteristics or selectivity for certain materials. By selecting single molecules or combinations of the molecules described herein, different fragmentation patterns when exposed to the particle beam maybe obtained. This may allow optimization of the etching process.

[0057] The method may include a molecule that comprises at least one chain, wherein the chain is perfluorinated, perchlorinated, and / or perhalogenated.

[0058] The high chemical stability of these chains could result in longer shelflife and / or easier handling of the precursor. Additionally, the unique surface interaction properties and ability to form volatile etch products may lead to more efficient and uniform etching. The high electronegativity of the halogens could contribute to the formation of highly reactive species upon fragmentation, potentially enhancing etch rates and / or selectivity of the etching process.

[0059] The method may include a molecule that comprises at least one predetermined breaking point in the at least one chain. For example, when exposed to the particle beam, the molecule may be relatively more likely to break at the predetermined breaking point, compared to a breaking at other points.

[0060] The breaking points may allow for more controlled fragmentation of the molecule when exposed to the particle beam, potentially leading to easier formation of specific reactive species that enhance etching performance. These predetermined weak spots in the molecular structure may enable fragmentation at lower energy levels, possibly allowing for the use of lower beam currents and / or beam dosage, thereby potentially reducing potential damage to sensitive areas of the lithography object. Breaking points may offer a balance between stability for handling and reactivity during the etching process.

[0061] The method may include at least one first predetermined breaking point of the at least one predetermined breaking point that comprises a carbonyl group and / or a sulfonyl group. A carbonyl group maybe understood as a functional group with the formula C=0, composed of a carbon atom double-bonded to an oxygen atom, and divalent at the C atom.

[0062] A sulfonyl group maybe understood as having the general formula -S(=0)2-, where there are two double bonds between the sulfur and oxygen.

[0063] A breaking point that comprises a carbonyl functional group and / or a sulfonyl functional group may provide a well-defined breaking point in the molecular chain, potentially leading to more predictable and controlled fragmentation when exposed to the particle beam. A breaking point that comprises a carbonyl functional group and / or a sulfonyl functional group may produce specific reactive species upon fragmentation that could enhance etching performance. Its presence might allow for fragmentation at lower energy levels, possibly enabling the use of lower beam currents and reducing potential damage to sensitive areas of the lithography object.

[0064] The processing may further comprise a repair of a pattern element on the lithography object.

[0065] The repair may include, for example, an opaque defect which is part of the pattern element of a lithography object. The characteristics of the opaque defect maybe such that it leads to a reduced propensity to transmit light (at least within a certain light wavelength range) than is desired.

[0066] The pattern element may be provided in the form of a structure which is provided on a surface of the lithography object and which can influence light transmitted and / or reflected by the lithography object (in at least one light wavelength spectrum of light). The influencing may comprise at least partial absorbing of the light and / or creating a phase shift in the light.

[0067] The repair may comprise, for example, at least partial etching of a material of the pattern element and / or at least partial removing of the pattern element, such that an absorbing and / or phase-shifting characteristic of the pattern element is altered (in terms of magnitude). In this way, it is possible to provide an improved repair of a lithography object, for example when an excessively high absorbing and / or phase-shifting characteristic has been provided by a repair operation on the lithography object. In this way, it is possible to lower production costs for a lithography object overall, since masks can be subjected to a repair rather than new production and, in this way, it is possible to minimize reject material during the production process for the lithography object. This can additionally have a positive effect on the sustainability of a production process for a lithography object.

[0068] A material of the pattern element may contain chromium. In some cases, the pattern element may be a chromium-containing absorbing material. In this way, it is possible to provide an extended use spectrum (for example with regard to possible etchable materials) for particle beam-based processing operations on a lithography object.

[0069] In other cases, for example, it is also possible to etch chromium-containing object material without this material necessarily having to be part of a pattern element of the object.

[0070] A material disposed beneath the material of the pattern element (or more generally: lithography object) may comprise silicon, preferably Si02.

[0071] In this way, any possible absorbing and / or phase-shifting influence of the material disposed beneath the pattern element for transmitted light (in at least one light wavelength range defined by the material) can be minimized, which makes it possible to improve imaging characteristics of the lithography object in subsequent exposure processes (especially in a transmission). It is also possible for the silicon-containing material to serve, for example, as etch stop layer, in order for example to signal complete removal of the material disposed thereon (preferably without itself being etched significantly).

[0072] The processing may comprise processing of a ruthenium-containing layer, which may preferably be disposed on a tantalum-containing layer.

[0073] In some cases, the tantalum-containing layer may be applied atop a ruthenium- containing and / or rhodium (Rh)-containing capping layer. The capping layer may be disposed, for example, on a substrate. It may cover the substrate, for example, over a large area and / or completely. In some examples, the capping layer is essentially unstructured. A reflective multilayer stack may optionally be disposed between the capping layer and the substrate, especially when the lithography object takes the form of an EUV mask. The capping layer may serve, for example, to protect the substrate and / or multilayer stack, for example during the production and / or use of the lithography object in the case of chemical processing. It can also serve as etch stop layer.

[0074] In some cases, the pattern element may be applied above the ruthenium-containing layer. In other cases, the pattern element may itself include the ruthenium-containing layer and the tantalum-containing layer. In other cases again, the pattern element may include the ruthenium-containing layer, where the pattern element is disposed atop the tantalum-containing layer.

[0075] In some cases, an etch rate on the ruthenium-containing layer may be higher than on the tantalum-containing layer disposed beneath the ruthenium-containing layer. In some illustrative cases, for example, the etch rate on the ruthenium-containing layer may be 1.5 to 50 times higher than on the tantalum-containing layer, for example three times, five times, ten times, 15 times, 20 times, 30 times or even higher.

[0076] In this way, the inventive processing of a lithography object can also enable processing of possible materials used in the future for lithography objects.

[0077] The first etch gas can be provided in such a way that the etching operation on the pattern element material proceeds more quickly than on a substrate material of the lithography object, preferably at least twice as quickly.

[0078] In some cases, an etch rate on the material of the pattern element may be higher than on the material disposed beneath the material of the pattern element. In some illustrative cases, for example, the etch rate on the material of the pattern element may be two to 50 times higher than on the material of the material disposed beneath the pattern element, for example at least three times, five times, ten times, 15 times, 20 times, 30 times or 40 times higher. In some cases, the etch rate on the material of the pattern element may also be more than 50 times as high as the etch rate on the material of the substrate. In this way, it is possible by means of the method according to the invention for processing of a lithography object to achieve an elevated etch selectivity between a material of the pattern element and a substrate material disposed beneath the material of the pattern element. This can enable more exact processing of the lithography object and suppress unwanted damage to the substrate caused by the etching.

[0079] A molecule of the at least one organic halogen-containing component may comprise at least two halogen atoms.

[0080] In some cases, a molecule of the at least one organic halogen-containing component may comprise at least three, four, five, six, seven, eight, nine, ten or more than ten halogen atoms.

[0081] In some cases, in a molecule of the at least one organic halogen-containing component, the stoichiometric ratio between halogen atoms and other types of atom may be at least one, two, three, four, five or more.

[0082] Such provision of the organic halogen-containing component can enable a method improved in accordance with the invention for processing of the lithography object, as already described above.

[0083] A molecule of the at least one organic halogen-containing component may comprise at least two different halogen atoms.

[0084] In some cases, a molecule of the organic halogen-containing component may comprise at least two (different) halogens from the following: fluorine, chlorine, bromine and / or iodine.

[0085] This can enable a broader spectrum of use of the method of the invention for processing of the lithography object in that, for example, a selective etching operation can also be enabled on materials other than those known to date from the prior art.

[0086] The at least one organic halogen-containing component may comprise hexachloroacetone, oxalyl chloride, tetrachloroethylene, trichloroacetyl chloride, trichloroacetic acid, a halo aldehyde, chloroacetaldehyde, 2,2-dichloroacetaldehyde, halo alcohol, halo carboxylic acid, carbonyl halide, halo ether and / or a halo ketone.

[0087] The use of at least one of these substances can, in a preferred manner, support a method of processing a sample, with the above-described advantageous effects.

[0088] The method may further comprise providing an oxygen-containing gas, preferably water vapour.

[0089] In some cases, the oxygen-containing gas may alternatively or additionally also comprise one or more of 02, 03, H202, N20, NO, N02, HN03, C1NO2, FN02or another suitable oxygen-containing gas.

[0090] The providing of an oxygen-containing gas may advantageously positively assist formation of a volatile species as product of the method of processing a lithography object, and an etch rate on the lithography object.

[0091] The method may further comprise providing a nitrogen-containing gas, preferably N02.

[0092] In some cases, the nitrogen-containing gas may alternatively or additionally also comprise one or more of N20, NO, HN03, NOCI, NOF, CIN02, FN02or another suitable nitrogen-containing gas.

[0093] This may advantageously reduce or essentially suppress unwanted deposition of carbon on the lithography object and positively assist an etch rate on the lithography object.

[0094] The oxygen-containing gas and / or the nitrogen-containing gas maybe provided simultaneously with the providing of the organic halogen-containing component.

[0095] In this way, it can be ensured that there is always a sufficient amount both of the oxygen-containing gas and / or of the nitrogen-containing gas and of the organic halogen-containing component available on the lithography object.

[0096] The oxygen-containing gas and / or the nitrogen-containing gas maybe provided at a different time from the providing of the organic halogen-containing component. In some cases, the oxygen-containing gas and / or the nitrogen-containing gas maybe provided before the organic halogen-containing component. Alternatively or additionally, it is possible that the oxygen-containing gas and / or the nitrogencontaining gas is provided after the organic halogen-containing component.

[0097] In some cases, the oxygen-containing gas and / or the nitrogen-containing gas maybe provided with an offset, for example, of a few ps (e.g. i-ioo ps), a few ms (e.g. i-ioo ms) or a few seconds (e.g. i-io s) relative to the organic halogen-containing component.

[0098] In this way, it is possible to ensure that a repair operation or etching operation on the lithography object is not undesirably influenced (for example slowed) by the presence of the oxygen-containing and / or nitrogen-containing gas. This can enable defined and controlled processing of the lithography object.

[0099] The method may further comprise increasing a feed rate of the nitrogen-containing gas to increase an etch rate. In this way, it is possible to provide fine adjustment of an etch rate on the lithography object.

[0100] The nitrogen-containing gas can be provided at a rate of o.i seem - io seem, more preferably of 0.5 seem - 8 seem, even more preferably of 1 seem - 6 seem, and most preferably at a rate of 2 seem - 4 seem. It is possible to achieve a high etch rate within these ranges. By variations within these ranges, it is possible to adjust an etch rate on the lithography object.

[0101] An etch rate on the lithography object maybe about 0.05 nm / min - 5 nm / min or greater, more preferably 0.5 nm / min - 3 nm / min or greater, even more preferably 1 nm / min - 2 nm / min or greater, and most preferably 1.2 nm / min - 1.8 nm / min or greater.

[0102] The aforementioned possible etch rates may relate to an etch rate on a pattern element. Additionally or alternatively, the etch rates may also relate to an etching operation on another object material, for example a material disposed beneath the pattern element.

[0103] In this way, it is possible to provide targeted processing of the lithography object in order to enable precise and / or time-efficient processing of the lithography object. The directing of the particle beam may be configured such that an average dwell time of the particle beam at a site on the lithography object is between 0.05 ps - 10 ps, more preferably between 0.1 ps - 5 ps and most preferably between 0.5 ps - 3 ps.

[0104] The dwell time may specify a length of a time interval during which the particle beam is directed onto a particular site on the lithography object before it is switched off and / or directed onto another site on the lithography object.

[0105] In this way, it is possible to enable an optimized etching operation on the lithography object.

[0106] The method may also comprise adjusting of a frame refresh time, FRT, to a value of o ps - 1000 ps, more preferably of 100 ps - 900 ps, even more preferably of 200 ps - 800 ps, and most preferably to a value of 300 ps - 600 ps.

[0107] In some cases, the FRT may also be adjusted to another suitable value, for example an intermediate value.

[0108] An FRT in this context may be considered to mean the length of the time interval between two instances when the particle beam hits the same site on the object. For example, it may be the case that the particle beam hits the same site for a particular first dwell time. This is then followed by a particular wait time during which the particle beam does not hit the same site (for example is switched off or directed to another site on the lithography object). After the wait time, the particle beam can then hit the same site again for a second dwell time. The wait time makes it possible for the etch gas(es) to accumulate again freshly on the surface of the object, in order to be available again there for the etching operation when the particle beam is redirected onto the surface. This wait time is considered herein to be the FRT.

[0109] Adjustment of the FRT to one of the values mentioned may contribute to a further improvement in the method according to the invention for processing a sample.

[0110] The method may comprise reducing the FRT in order to increase an etch rate. The method may also comprise, for example, a change (increase) in the FRT in order to change (reduce) an etch rate of the etching process. The FRT, for example from a starting state of 1.5 ps - 2000 ps, preferably of 10 ps - 1000 ps, more preferably of 100 ps - 500 ps and most preferably 250 ps - 400 ps, may be increased by a particular factor, for example doubled, tripled, quadrupled, quintupled, hextupled, decupled. It is also conceivable to increase the FRT to any suitable intermediate value.

[0111] The etch rate may also be proportionally correlated with the FRT, for example within the ranges mentioned.

[0112] By increasing the FRT, with the same number of processing cycles (frames), it is also possible to achieve an increase in the etch depth. Even in the case of an already advanced etch depth, in the case of a greater FRT at the lithography object, it is possible to ensure a sufficient feed rate of the first etch gas and hence to support a (desired) further advance in the etch depth. This may be associated with an increase in etch efficiency per particle of the particle beam and hence with a greater etch depth.

[0113] Overall, an FRT of o may be advantageous. In other examples, the FRT may be chosen, for example, within a range from o to 1000 ps.

[0114] The method may comprise increasing a feed rate of the etch gas in order to achieve an increase in the etch rate.

[0115] The feed rate of the etch gas may, for example, measured from a starting state, be increased by a factor of 1.5 - 1000, more preferably by 1.6 - 500, even more preferably by 1.8 - 300 and most preferably by a factor of 1.8 - too, for example doubled, tripled, quadrupled, quintupled, hextupled, decupled.

[0116] The etch rate may increase proportionally with the feed rate of the etch gas.

[0117] In this way, it is possible to establish a desired etch rate on the lithography object in a targeted and defined manner, and to optimize the method according to the invention for processing a sample.

[0118] The method may further comprise a particle beam-based processing step with a second etch step. The particle beam-based processing step may precede or follow the above-described method of processing the lithography object.

[0119] The second etch gas may differ from the first etch gas. In some cases, it is possible that the second etch gas is completely different than the first etch gas. In some alternative cases, the second etch gas may comprise at least one component that is also present in the first etch gas.

[0120] The providing of a particle beam-based processing step with a second etch gas may enable, for example, faster etching. For example, it maybe the case that, first of all, a particle beam-based processing step with a second etch gas is provided, which at first leads to an elevated etch rate on a material, for example of a pattern element. After a predefined time, it is then possible, for example, to provide a method with a first etch gas, as described above, in order to enable processing of the lithography object with a lower etch rate (for example by comparison with etching with the second etch gas) and optionally higher etch selectivity with regard to a material disposed beneath the pattern element and / or finer etching (for example with lower surface roughness).

[0121] The second etch gas may include a noble gas halide, preferably XeF2, and / or a chlorine compound, preferably NOCI. As well as the second etch gas, it is additionally also possible to supply a nitrogen-containing and / or oxygen-containing gas, as described herein.

[0122] Providing of the second etch gas such that it includes at least one of the aforementioned substances can contribute to an improved method of processing the lithography object.

[0123] It is emphasized that the aspects described herein may also be applied to objects other than lithography objects. For example, they may also generally be applied to wafers, mask blanks, or semiconductors in general.

[0124] A second aspect of the present invention relates to a computer program comprising code which, when executed, causes a computer to execute one of the aforementioned methods.

[0125] In this way, it is possible to provide a simplified, faster and less expensive method of processing a sample. A third aspect of the present invention relates to a device for processing a lithography object. The device may comprise (a) means of providing an etch gas comprising at least one organic halogen-containing component, wherein a molecule of the at least one organic halogen-containing component further comprises: at least two carbon atoms; at least three different elements. The device may further comprise (a) means of directing a charged particle beam onto the lithography object to induce an etching operation on the lithography object.

[0126] The molecule and / or the etch gas may have the properties described herein, for example as described with respect to the first aspect of the invention.

[0127] The device may not comprise means for generating a plasma that comes into contact with the etch gas. This may simplify the device compared to devices which comprise a plasma source.

[0128] For example, the device may comprise and / or be adapted to be connected to one or more gas reservoirs (e.g., vessels) in which the etch gas is stored (or at least a component thereof). The device may be adapted to guide the etch gas from the one or more gas reservoirs via one or more tubes, pipelines, valves, and / or mass flow controllers to the lithography object. In some examples, apart from pressure and / or mass flow control, the etch gas may not be manipulated on its way to the lithography object. It may thus be activated only, e.g., after attaching to the surface of the lithography object, when interacting with the particle beam, e.g. a focused electron beam, enabling precise position control of the etching process.

[0129] The device may be configured such that the means of providing an etch gas comprises a vessel containing the organic halogen-containing component.

[0130] The molecule in the means of providing an etch gas may have the properties as described herein, for example as described with respect to the first aspect of the invention. The device may further comprise means of automatically executing one of the methods mentioned herein.

[0131] The device may further comprise a storage medium on which a computer program as described herein is stored.

[0132] The means or storage medium may comprise computer- readable media and / or at least one processor. The computer-readable media include both computer storage media and communication media including all media which facilitate the transmission of a computer program from one location to the other. A processor may be responsible for the management of the bus and the general processing, including the execution of software modules stored on the machine-readable storage medium. A computer- readable storage medium maybe coupled to a processor, such that the processor may read and write information from and to the storage medium. Alternatively, the storage medium may also be integrated in the processor. By way of example, the machine- readable medium may comprise a transmission line, a carrier wave modulated with data and / or a computer- readable storage medium with instructions stored thereon separately from the wireless node, which may all be accessed by the processor via the bus interface. Alternatively or additionally, the machine-readable storage medium or a part thereof maybe integrated in the processor, as maybe the case for cache and / or general register files. Examples of machine-readable storage media are for example RAM (Random Access Memory), flash memory, ROM (Read Only Memory), PROM (Programmable Read-Only Memory), EPROM (Erasable Programmable Read-Only Memory), EEPROM (Electrically Erasable Programmable Read-Only Memory), registers, magnetic disks, optical disks, hard disks or any other suitable storage medium or any combination thereof. The machine-readable medium may be embodied in a computer program product.

[0133] In this way, it is possible to provide a simplified, faster and less expensive method of processing a sample.

[0134] A fourth aspect of the present invention relates to a lithography object that has been processed by one of the aforementioned methods.

[0135] The lithography object may, for example, be a UV or EUV or DUV mask. 4. Brief description of the figures

[0136] The following detailed description describes possible embodiments of the invention, with reference being made to the following figures:

[0137] Figs. 1A and 1B show the effects of variation of a feed rate of N02on an etch rate;

[0138] Fig. 2 shows the effects of variation of an FRT on an etch rate;

[0139] Figs. 3A and 3B show the effects of the etch selectivity of an organohalogen precursor on an operation according to the invention for processing a lithography object;

[0140] Figs. 4A and 4B show an inventive etching method with a "lines-and- spaces" pattern.

[0141] 5. Detailed description of possible embodiments

[0142] Embodiments of methods according to the invention and of devices according to the invention are described in detail below. It should be pointed out, however, that the use of devices according to the invention and of the methods according to the invention is not restricted to the examples discussed below. Instead, these can generally be used for processing of a lithography object.

[0143] It is further pointed out that only individual embodiments of the invention can be described in detail hereinafter. However, a person skilled in the art will understand that the features and modification options described in association with these embodiments can also be modified even further and / or can be combined with one another in other combinations or sub-combination without this leading away from the scope of the present invention. Moreover, individual features or sub-features can also be omitted provided that they are dispensable in respect of achieving the intended result. In order to avoid unnecessary repetition, reference is therefore made to the remarks and explanations in the preceding sections, which also retain their validity for the detailed description which now follows below. Fig. 1A shows a schematic diagram too of etch windows 110-130 obtained by way of example in the form of rectangular areas. In the experiments on which the diagram is based, a silicon-containing substrate layer was used, disposed beneath a chromium- containing material of a mask blank (more specifically, a chromium- and nitrogencontaining material). The different etch windows 110-130 were obtained for different feed rates of a nitrogen-containing gas.

[0144] Window 110 was recorded at a first feed rate of the nitrogen-containing gas. In this regime, (unwanted) deposition of carbon took place in the etch window, which can firstly lead to unwanted impairment of the optical properties of a lithography object and can secondly adversely affect a possible etching process on the lithography object.

[0145] Window 120 was recorded at a second feed rate of the nitrogen-containing gas, which was increased by about one order of magnitude relative to the first feed rate. It was found here that there was a distinct reduction in carbon deposition and increased etching progress compared to window 110, which was also verified by AFM images.

[0146] Window 130 was recorded at a third feed rate of the nitrogen-containing gas, which was chosen at about twice as high a level as the second feed rate. No further significant deposition of carbon was found in the region of the window 130. In addition, a further increase in etching progress was found in the region of the window 130.

[0147] Overall, a feed rate of the nitrogen-containing gas of more than 1 seem or at least 2 seem was found to be preferred in this example in order to prevent unwanted carbon deposition and to achieve high etching progress.

[0148] It was also found that the maximum achievable etch rate with the organohalogen precursor used is limited by the number of electrons available for the etching operation, from which it can be concluded that there is a trend for more electrons to have to be used than required in conventional etching methods, for example, for a particle beambased etching operation according to the invention by means of the organohalogen precursor. On the other hand, this can achieve particularly fine control of etching progress. In general, experiments of the type outlined above were conducted with organohalogen precursors as substance reactive for the processing at a first temperature in the range of, for example, -50°C to 30°C. However, these ranges are merely illustrative. Experiments were also performed with a dwell time DT (e.g. o.oi ps - o.i ps), an FRT in the range of too ps - 500 ps, a typical beam current of the particle beam as described herein, and a typical charge deposited on the lithography object, as described herein.

[0149] Fig. 1B shows a schematic diagram that shows an etch rate (on the same material as described with regard to Fig. 1A) as a function of a feed rate of the nitrogen-containing gas (here: N02). Fig. 1B shows this relationship for various temperatures of the organohalogen precursor (used as a component of the first etch gas; here CC13COC1), where data points shown as squares (process 1) correspond to a first temperature of the organohalogen precursor, circles (process 2) to a second temperature about 15% below the first temperature, upward triangles (process 3) to a third temperature selected to be a few degrees Celsius above the first temperature, and downward triangles (process 4) to a fourth temperature selected to be identical to the first temperature (in addition, the processing associated with this data point was preceded by an additional processing operation for which a noble gas halide was used as (second) etch gas; here: XeF2).

[0150] It can be inferred from the diagram from Fig. 1B that an increase in temperature (from the second temperature to the first temperature and also to the third temperature) of the organohalogen precursor leads to an increase in etch rate with otherwise the same feed rate of the nitrogen-containing gas. This can be explained in that the temperaturedependent vapour pressure of the organohalogen precursor rises with an increase in temperature, and hence generally more reactant of the organohalogen precursor is available on the lithography object.

[0151] It can also be inferred from the diagram from Fig. 1B that, for the data points associated with the first temperature (without a preceding processing operation) and with the second temperature, an increase in the feed rate of the nitrogen-containing gas of, for example, 50%, 100%, 150% or 200% relative to an initial feed rate of the nitrogen-containing gas is associated in each case with an increase in etch rate (for example in nm / s) on the lithography object. In addition, an increase in the feed rate of the nitrogen-containing gas at a higher temperature of the organohalogen precursor (for example at the first temperature) leads to a greater increase in etch rate than at a lower temperature of the organohalogen precursor (for example at the second temperature).

[0152] The diagram shown in Fig. 1B shows that there is an increase in etch rate by about 15% (at the second temperature) for an increase in the feed rate of the nitrogen-containing gas of 50%, for example, meaning that an increase in feed rate by at least 50% (in the range considered by way of example) may be associated with an increase in etch rate of at least about io%-2O% (for example by at least 13%).

[0153] For the first temperature of the organohalogen precursor, an increase in feed rate of the nitrogen-containing gas by at least 50% led to an increase in etch rate by at least about 25%-35% (for example by at least 27.5%) relative to a starting value.

[0154] An upstream processing step with a noble gas halide (at the same temperature), with an unchanged feed rate of the nitrogen-containing gas and temperature, led to a considerable increase in etch rate by at least about 50%-70% (e.g. at least 60%) relative to the starting value.

[0155] It was shown that, in this example, it is possible to provide etch rates of distinctly greater than 1 nm / min.

[0156] For a further increase in the etch rates of the nitrogen-containing gas (for example more than 200% relative to a starting value), a further increase can be expected, such that, especially in the case of upstream connection of a further processing step (for example with a noble gas halide), a growth in etch rate of 600% or more is possible relative to a starting value.

[0157] It should also be mentioned that the data points shown in Fig. 1B have been created with the same process parameters as the etch windows too shown in Fig. 1A. Fig. 2 shows the effects of variation of the FRT on an etch rate on the same illustrative material that was also used for Figs. 1A and 1B. Fig. 2 more particularly shows a diagram that compares the etch rate for two different DTs of a chosen FRT.

[0158] The data points shown as squares correspond to a first DT, while the data points shown as circles correspond to a second DT which is lower (relative to the first DT). The second DT may, for example, be 5O%- o% (e.g. 6o%) of the first DT.

[0159] In qualitative terms, it is found that the etch rate for a shorter DT (e.g. second DT), with otherwise the same FRT, is lower than for a longer DT (e.g. first DT). This can be explained in that, for a higher DT, the particle beam used has been directed onto the region of the sample to be processed for a longer time interval.

[0160] It is also found qualitatively that the etch rate decreases with increasing FRT or, conversely, the etch rate increases with decreasing FRT. Ideally, a maximum etch rate would be found at an FRT of o ps. In a first region, the etch rate (for the first DT) decreases in an approximately linear manner with increasing FRT, while the etch rate for greater FRTs then transitions to saturation characteristics, meaning that a further increase in FRT would lead to an increasingly smaller further decrease in etch rate.

[0161] In quantitative terms, it can be inferred for the second DT that an increase in FRT by, for example, 300% (relative to a starting FRT) correlates with a decrease in etch rate of about 5%-io%, e.g. 9% (assuming a linear correlation between etch rate and FRT in the range in question).

[0162] For the first DT, for example in the range in question, it is possible to ascertain a mean average decrease in etch rate of about 5%-io%, for example 7%, for an increase in FRT of 50% for example. It can also be concluded from this that an increase in DT (for example from the second DT toward the first DT), in the case of an increase in FRT, leads to a faster decrease in etch rate.

[0163] This decrease in etch rate for increasing FRT can be explained in that the wait time between two processing cycles of a region of the lithography object is increased for increasing FRT. No etching operation takes place during this wait time, and so the effective etch rate decreases with increasing FRT.

[0164] As well as etch rate, etch depth was also examined, specifically by means of etch windows, similarly to the manner described with reference to Figs. 1A and 1B. By way of example, a test series was performed with etching operations with a first DT, a first number of etch cycles and the third temperature of the organohalogen precursor. In addition, the respective etching operations were supplied with a nitrogen-containing gas. The FRT was increased stepwise, from window to window by 25%-5O% in each case relative to the preceding FRT value. It was found that the etch depth increased in each case. This means that etch depth also increased with greater FRT.

[0165] Figs. 3A and 3B show illustrative results from a study of the etch selectivity of CC13COC1 on the material described with regard to Figs. 1A and 1B (chromium-containing material, especially chromium- and nitrogen-containing material with a silicon- containing layer beneath). For the discussion that follows, the first DT and an FRT of o ps were chosen. In addition, the first etch gas contained the organohalogen precursor CCI3COCI at the first temperature and a nitrogen-containing gas (here: N02).

[0166] The above-discussed method according to the invention for processing of a lithography object was preceded by a further particle beam-based processing step. This consisted of a preliminaiy etching method, for which the second etch gas used included XeF2and H20. After an etch depth of a few tens of nanometres, the preliminary etching method was stopped and switched to a method according to the invention for processing of a lithography object, based on a first etch gas (as described herein).

[0167] Fig. 3A shows a diagram that depicts the correlation of an energy-selective backscattered (ESB) signal and the number of etch cycles conducted for various test runs.

[0168] In Fig. 3A, for example, region A shows the ESB value for an etching operation on, for example, a pattern element versus the number of etch cycles run in a region of interest on the lithography object. The ESB value remains essentially constant. If, however, the etching process has progressed to such a degree that it is gradually transitioning to a material beneath the pattern element (for example to a substrate), there may be a corresponding drop in the ESB value. This scenario is depicted in region B in Fig. 3A.

[0169] In the case of further progression of the etching process (in further etch cycles), for example completely down to a substrate beneath the pattern element (region C), the ESB value can then assume a new (average) value lower than the ESB value for complete etching, for example of a pattern element on the lithography object.

[0170] Fig. 3B, by comparison, shows multiple SEM images 300 of etch windows, with recording of the images of the etch windows 330-350 with an ESB detector (i.e. measurement of backscattered electrons).

[0171] Etch window 330 was not subjected to any etching process (i.e. o etch cycles). A comparatively bright ESB signal (window 330) is found here, which suggests a trend toward a higher number of backscattered electrons.

[0172] Etch window 335 was processed with a first number of etch cycles. The accompanying ESB image 335 still does not show any significant change compared to window 330, since etching is still effected in the same material.

[0173] The windows 330 and 335 correspond to the scenario shown in Fig. 3A as region A.

[0174] Window 340 was processed with a second number of etch cycles, where the second number of etch cycles chosen was twice as high as the first number of etch cycles. Window 340 shows a transition (corresponding to region B in Fig. 3A) of the etch operation from, for example, a pattern element to a material beneath the pattern element (for example a substrate material).

[0175] Window 345 was treated by a third number of etch cycles, where the third number of etch cycles chosen was three times as high as the first number of etch cycles. It becomes clear from the image of the window 345 that, in this scenario, the etching operation has transitioned from an etching operation on a pattern element, for example, to a material beneath the pattern element (corresponding to region C in Fig. 3A). The ESB image of the window 345 has a much darker appearance compared to windows 330 and 335. This can be explained in that the lower ESB value in this regime means that fewer backscattered electrons are detected by the ESB detector used.

[0176] Window 350 was treated by a fourth number of etch cycles, where the fourth number of etch cycles chosen was four times as high as the first number of etch cycles. This did not achieve a significantly greater etch depth (verified by AFM). The method therefore has extremely high etch selectivity.

[0177] A quantitative analysis showed that the experimental environment discussed in relation to Figs. 3A and 3B can achieve an etch rate of at least 1 nm / min or more.

[0178] The results described above can be improved further by a longer upstream particle beam-based processing step with a second etch gas.

[0179] There follows a discussion of characterization of the etch selectivity of various etch gases at a transition from a chromium-containing layer as can be used for a pattern element, for example, and a material beneath the chromium-containing layer (for example a substrate material / substrate layer). The transition maybe achieved at an etch depth (measured relative to a surface of a lithography object) of a few nanometres to a few tens of nanometres, for example about 20 nm.

[0180] This is effected for three different etch gases: a noble gas halide-containing etch gas, a chlorine-containing etch gas, and an organohalogen precursor.

[0181] It is found here that, for example, the use of a noble gas halide as etch gas does not lead to significant etch selectivity between an etching operation on a chromium-containing layer and a silicon-containing substrate material.

[0182] By contrast, the use of an (inorganic) chlorine-containing etch gas shows a distinct increase in etch selectivity of an etching operation on a chromium-containing layer and a silicon-containing substrate material. Accordingly, it is found that an etching operation based on the chlorine-containing etch gas penetrates only slightly into the substrate layer. The use of a chlorine-containing etch gas can thus distinctly suppress unintended etching of the substrate layer by comparison with etching with a noble gas halide. The use of a chlorine-containing etch gas frequently requires the addition of water (vapour) in order to enable a volatile species of the etching products, for example CrOxCly.

[0183] Finally, even when an organohalogen precursor is used as etch gas, it is found that the etching operation penetrates only very slightly into the substrate layer. Thus, in particular the use of an organohalogen precursor as (primary) etch gas also leads to distinct etch selectivity between a chromium-containing layer and a silicon-containing substrate material, which is comparable to the etch selectivity of the chlorine- containing etch gas.

[0184] Additionally or alternatively, the precursor used may also be another organohalide, for example C2OC14, and the additive gas used may be a nitrogen-containing gas, which can, for example, further increase etch selectivity on the chromium-containing layer compared to the silicon-containing substrate layer beneath the chromium-containing layer.

[0185] A combination of a second particle beam-based processing operation that uses a second etch gas and a first particle beam-based processing operation that uses a first etch gas maybe advantageous, for example. The two processing operations maybe conducted simultaneously or successively or in repeated alternation. The second processing operation may feature a high etch rate. The second etch gas may be, for example, a noble gas halide and / or chlorine-containing (optionally with H20 and / or a nitrogencontaining gas as added gas). The first processing operation may feature a reduced etch rate compared to the second processing operation. However, the first processing operation may enable finer control (for example via limitation thereof by the number of particles, e.g. electrons, as described herein) and / or a higher etch selectivity. The first etch gas may include at least one organic halogen-containing component as described herein. By a combination of the two processing operations, it is possible to provide parameter combinations of etch rate and etch selectivity that are advantageous for the respective case. The first processing operation maybe configured, for example, such that is performed beforehand and / or removes more than 30%, more than 50% or more than 75% of the desired etch depth. This may then be followed by the second processing operation, which is then performed until the desired removal depth is attained. It is thus possible to achieve a combination of a relatively high etch rate and good etch selectivity compared to an etching process based on the use of a single particle beam and a single etch gas.

[0186] Figs. 4A and 4B show an illustrative "lines-and-spaces" pattern 400 consisting of several lines 410 that are normally separated from one another by corresponding spaces 410.

[0187] In the illustrative case shown in Fig. 4A, two of the linear pattern elements (lines) 410 are joined to one another by a bridge 430. Since this bridge 430 may be regarded as a defect in need of repair on a lithography object, a method according to the invention maybe employed for processing of a lithography object in order to remove the bridge 430.

[0188] For this purpose, for example, a particle beam may be directed onto a region of the bridge 430 in the presence of a first etch gas according to the invention. The first etch gas has been provided in such a form that it contains an organohalogen precursor. In addition, the first etch gas has been supplied with a nitrogen-containing component.

[0189] Preferred options here have been found to be the use of CC13COC1 and the supply of N02. A feed rate of the nitrogen-containing component may generally be in the range of 0-10 seem.

[0190] Fig. 4B shows, by way of example, the scenario from Fig. 4A, except that the bridge 430 has been removed by a method according to the invention for processing a lithography object.

[0191] According to the invention, an at least organic halogen-containing component of a first etch gas may, for example, be a halogenated compound, for example CaXbZc(X: at least one type of halogen; Z: at least one type of extrinsic atom), or perhalogenated compound, for example one or more of CaClb, CC14, C2C14, etc. and / or CaFb, CF4, C2F4, etc. In some cases, the organic halogen-containing component may additionally or alternatively also comprise aliphatic, cyclic and aromatic haloalkanes, -alkenes, - alkynes, for example CaHbClc(e.g. CHC13, CH2C12, CH3C1, etc.) or CaHbFc(e.g. CHF3, CH2F2, CH3F, etc.). Additionally or alternatively, the organic halogen-containing component may also comprise one or more of a halo aldehyde, halo alcohol, halo carboxylic acid, carbonyl halide, halo ether and / or halo ketone, for example CaObClc(e.g. C2OC14(trichloroacetyl chloride), C2O2C12(oxalyl chloride), C3OC16 (hexachloroacetone), etc. and / or CaObFcand / or CaHbOcCld (e.g. C2HO2C13(trichloroacetic acid), etc.) and / or CaHbOcFd (e.g. C2HO2F3), where the respective precursor gas maybe guided to the site of reaction on the lithography object, for example, by means of a pipeline system.

[0192] In some cases, it is also possible that the organohalogen compounds described herein may contain Br and / or I. The organohalogen compounds used in accordance with the invention may, as well as C, H, F, Cl, Br, I, also contain O and / or other elements, for example B, S, P, N. Preferably, in accordance with the invention, organohalogen compounds may be regarded as compounds having a high proportion of halogen atoms (for example molecules having at least two, preferably more than two, halogen atoms) compared to other atom types.

[0193] Since, as already described above, there could under particular circumstances also be unwanted deposition of carbon (carbon deposition) when organic halides are used in pure form, additive gases may be added to the etch gas used, which can reduce or essentially prevent unwanted deposition of carbon. Useful additive gases here are one or more oxidizing agents (e.g. 02, H20, H202, N20, NO, N02, HN03and / or other oxygen-containing gases), gases having reducing action (e.g. H2, NH3, CH4and / or other hydrogen-containing gases) and / or inorganic halides (e.g. Cl2, HC1, NOCI, NOF, C1NO2, FN02, XeF2, XeF4, HF, I2, HI, etc.).

[0194] For the acceleration voltage of the particle beam, an acceleration voltage of preferably o.i kV - 3 kV, more preferably of 0.15 kV - 1 kV, even more preferably of 0.2 kV - 0.8 kV and most preferably of 0.3 kV - 0.6 kV maybe chosen. For the particle current of the particle beam, it is possible to select beam currents of preferably i pA - 500 pA, more preferably of 2 pA - 300 pA, even more preferably of 5 pA - 100 pA and most preferably of 10 pA - 50 pA.

[0195] The typical charge deposited on the lithography object during a processing operation maybe in the range of 50 C / cm2- 200 C / cm2.

[0196] Precursors used (for example for use as a second etch gas and, for example, in association with FEBIE) may, for example, be halides (e.g. Cl2, HC1, XeF2, HF, I2, HI, Br2, HBr, N0C1, NOF, CIN02, FN02, PC13, PC15, PF3and other halogen-containing gases) and / or oxidizing agents (e.g. 02, H20, H202, N20, NO, N02, HN03and / or other oxygen-containing gases) and / or gases having reducing action (e.g. H2, NH3, CH4and / or other hydrogen-containing gases).

[0197] In the following further examples of the invention are described:

[0198] 1. Method of processing a lithography object, comprising: providing a first etch gas comprising at least one organic halogen-containing component; directing a particle beam onto the lithography object to induce an etching operation on the lithography object.

[0199] 2. Method according to Example 1, wherein the processing comprises a repair of a pattern element on the lithography object.

[0200] 3. Method according to Example 2, wherein a material in the pattern element contains chromium.

[0201] 4. Method according to either of Examples 2 and 3, wherein a material disposed beneath the material of the pattern element comprises silicon, preferably Si02.

[0202] 5. Method according to either of Examples 1 and 2, wherein the processing comprises processing of a ruthenium-containing layer which is preferably disposed on a tantalum-containing layer. 6. Method according to any of Examples 2-5, wherein the first etch gas is provided in such a way that the etching operation on the pattern element material proceeds more quickly than on a substrate material of the lithography object, preferably at least twice as quickly.

[0203] 7. Method according to any of the preceding Examples, wherein a molecule of the at least one organic halogen-containing component comprises at least two halogen atoms.

[0204] 8. Method according to any of the preceding Examples, wherein a molecule of the at least one organic halogen-containing component comprises at least two different halogen atoms.

[0205] 9. Method according to any of the preceding Examples, wherein the at least one organic halogen-containing component comprises hexachloroacetone, oxalyl chloride, tetrachloroethylene, trichloroacetyl chloride, trichloroacetic acid, a halo aldehyde, halo alcohol, halo carboxylic acid, carbonyl halide, halo ether and / or a halo ketone.

[0206] 10. Method according to any of the preceding Examples, further comprising: providing an oxygen-containing gas, preferably water vapour.

[0207] 11. Method according to any of the preceding Examples, further comprising: providing a nitrogen -containing gas, preferably N02.

[0208] 12. Method according to either of Examples 10 and 11, wherein the oxygencontaining gas and / or the nitrogen-containing gas is provided simultaneously with the providing of the organic halogen-containing component.

[0209] 13. Method according to either of Examples 10 and 11, wherein the oxygencontaining gas and / or the nitrogen-containing gas is provided at a different time from the providing of the organic halogen-containing component.

[0210] 14. Method according to Example 11 or either of Examples 12 and 13 when they refer back to Example 11, further comprising: increasing the feed rate of the nitrogen-containing gas to increase an etch rate. 15- Method according to Example 11 or 14 or either of Examples 12 and 13 when they refer back to Example 11, wherein the nitrogen-containing gas is provided at a rate of 0.1 seem to 10 seem, preferably of 0.5 seem to 8 seem, more preferably of 1 seem to 6 seem, and most preferably at a rate of 2 seem to 4 seem.

[0211] 16. Method according to any of the preceding Examples, wherein the first etch gas is provided in such a way that an etch rate of the etching operation on the lithography object is at least 0.05 nm / min, preferably at least 0.5 nm / min, at least 1 nm / min or even at least 1.2 nm / min.

[0212] 17. Method according to any of the preceding Examples, wherein the directing of the particle beam is configured such that an average dwell time of the particle beam at a site on the lithography object is between 0.05 ps and 10 ps, preferably between 0.1 ps and 5 ps and most preferably between 0.5 ps and 3 ps.

[0213] 18. Method according to any of the preceding Examples, further comprising: adjusting of a frame refresh time, FRT, to a value of o ps to 1000 ps, preferably of 100 ps to 900 ps, more preferably of 200 ps to 800 ps, and most preferably to a value of 300 ps to 600 ps.

[0214] 19. Method according to any of the preceding Examples, further comprising: reducing the FRT in order to achieve an increase in an etch rate of the etching operation.

[0215] 20. Method according to any of the preceding Examples, further comprising: increasing a feed rate of the etch gas in order to achieve an increase in an etch rate of the etching operation.

[0216] 21. Method according to any of the preceding Examples, further including a particle beam-based processing step on the lithography object with a second etch gas.

[0217] 22. Method according to Example 21, wherein the second etch gas includes a noble gas halide, preferably XeF2, and / or a chlorine compound, preferably N0C1. 23. Computer program comprising instructions for executing a method according to any of Examples 1-22.

[0218] 24. Device for processing a lithography object, comprising: means of providing an etch gas comprising at least one organic halogencontaining component; means of directing a charged particle beam onto the lithography object to induce an etching operation on the lithography object.

[0219] 25. Device according to Example 24, wherein the means of providing an etch gas comprises a vessel containing the organic halogen-containing component.

[0220] 26. Device according to Example 24 or 25, further comprising: means for automatically executing the method according to any of Examples 1- 22.

[0221] 27. Device according to any of Examples 24-26, further comprising a storage medium having a computer program according to Example 23 stored thereon.

[0222] 28. Lithography object processed by a method according to any of Examples 1-22.

Claims

CLAIMS1. Method of processing a lithography object, comprising: providing a first etch gas comprising at least one organic halogen-containing component, wherein a molecule of the at least one organic halogen-containing component further comprises: at least two carbon atoms; at least three different elements; directing a particle beam onto the lithography object to induce an etching operation on the lithography object.

2. Method according to Claim i, wherein the molecule comprises at least one substructure with the empirical formula CaXbZc, wherein:C denotes carbon and a > 2, andX is at least one halogen and comprises at least one of the following elements: F, Cl, Br, I, andZ is an element or molecule.

3. Method according to Claim 2, wherein the molecule consists of the at least one substructure.

4. Method according to any of Claims 2 or 3, wherein Z comprises at least one of the following:O, S, S02, P, N02, N.

5. Method according to any of the preceding claims, wherein the etch gas reaches the lithography object as a neutral gas.

6. Method according to any of the preceding claims, wherein the etch gas is not exposed to a plasma during the processing.

7. Method according to any of Claims 2 to 6, wherein b is less than or equal to 7, less than or equal to 6, less than or equal to 5, less than or equal to 4, less than or equal to 3, less than or equal to 2, or 1.

8. Method according to any of Claims 1 to 7, wherein the molecule comprises at least one of the following: triphosgene or bis(trichloromethyl) carbonate (C3C16O3), a sulfonyl halide, such as an aromatic, saturated, or unsaturated aliphatic sulfonyl halide, ethanesulfonyl fluoride (C2H5FO2S), pyridinesulfonyl fluoride (C5H4FNO2S), thiophenesulfonyl fluoride (C4H3FO2S2), cyanomethanesulfonyl chloride (C2H2C1NO2S), chloromethanesulfonyl chloride (C1CH2SO2C1),CaXbY(2a+2-b), where X is any halide and ‘b’ is optionally greater than 1, a is optionally greater than and / or equal to 1 and Y is a non-metal, optionally a semimetal; a sulfenyl halide compound or selenenyl halide compound.

9. Method according to any of the preceding claims, wherein the molecule comprises at least one chain, wherein the chain is perfluorinated, perchlorinated, and / or perhalogenated.

10. Method according to Claim 9, wherein the molecule comprises at least one predetermined breaking point in the at least one chain.

11. Method according to Claim 10, wherein the at least one predetermined breaking point comprises a carbonyl group and / or a sulfonyl group.

12. Method according to any of the preceding claims, wherein the processing comprises a repair of a pattern element on the lithography object.

13. Method according to Claim 12, wherein a material in the pattern element contains chromium.

14. Method according to either of Claims 12 and 13, wherein a material disposed beneath the material of the pattern element comprises silicon, preferably Si02.15- Method according to any of Claims 1 to 12, wherein the processing comprises processing of a ruthenium-containing layer which is preferably disposed on a tantalum-containing layer.

16. Method according to any of Claims 12 to 15, wherein the first etch gas is provided in such a way that the etching operation on the pattern element material proceeds more quickly than on a substrate material of the lithography object, preferably at least twice as quickly.

17. Method according to any of the preceding claims, wherein a molecule of the at least one organic halogen-containing component comprises at least two halogen atoms.

18. Method according to any of the preceding claims, wherein a molecule of the at least one organic halogen-containing component comprises at least two different halogen atoms.

19. Method according to any of the preceding claims, wherein the at least one organic halogen-containing component comprises hexachloroacetone, oxalyl chloride, tetrachloroethylene, trichloroacetyl chloride, trichloroacetic acid, a halo aldehyde, chloroacetaldehyde, 2,2-dichloroacetaldehyde, halo alcohol, halo carboxylic acid, carbonyl halide, halo ether and / or a halo ketone.

20. Method according to any of the preceding claims, further comprising: providing an oxygen-containing gas, preferably water vapour.

21. Method according to any of the preceding claims, further comprising: providing a nitrogen-containing gas, preferably N02.

22. Method according to either of Claims 20 and 21, wherein the oxygen-containing gas and / or the nitrogen-containing gas is provided simultaneously with the providing of the organic halogen-containing component.

23. Method according to either of Claims 20 and 21, wherein the oxygen-containing gas and / or the nitrogen-containing gas is provided at a different time from the providing of the organic halogen-containing component.

24. Method according to Claim 21, or either of Claims 22 and 23 when referring back to Claim 22, further comprising: increasing the feed rate of the nitrogen-containing gas to increase an etch rate.

25. Method according to Claim 21 or 24 or either of Claims 22 and 23 when referring back to Claim 21, wherein the nitrogen-containing gas is provided at a rate of 0.1 seem to 10 seem, preferably of 0.5 seem to 8 seem, more preferably of 1 seem to 6 seem, and most preferably at a rate of 2 seem to 4 seem.

26. Method according to any of the preceding claims, wherein the first etch gas is provided in such a way that an etch rate of the etching operation on the lithography object is at least 0.05 nm / min, preferably at least 0.5 nm / min, at least 1 nm / min or even at least 1.2 nm / min.

27. Method according to any of the preceding claims, wherein the directing of the particle beam is configured such that an average dwell time of the particle beam at a site on the lithography object is between 0.05 ps and 10 ps, preferably between 0.1 ps and 5 ps and most preferably between 0.5 ps and 3 ps.

28. Method according to any of the preceding claims, further comprising: adjusting of a frame refresh time, FRT, to a value of o ps to 1000 ps, preferably of too ps to 900 ps, more preferably of 200 ps to 800 ps, and most preferably to a value of 300 ps to 600 ps.

29. Method according to any of the preceding claims, further comprising: reducing the FRT in order to achieve an increase in an etch rate of the etching operation.

30. Method according to any of the preceding claims, further comprising: increasing a feed rate of the etch gas in order to achieve an increase in an etch rate of the etching operation.

31. Method according to any of the preceding claims, further including a particle beam-based processing step on the lithography object with a second etch gas.

32. Method according to Claim 31, wherein the second etch gas includes a noble gas halide, preferably XeF2, and / or a chlorine compound, preferably NOCI.

33. Computer program comprising instructions for executing a method according to any of Claims 1 to 32.

34. Device for processing a lithography object, comprising: means of providing an etch gas comprising at least one organic halogencontaining component, wherein a molecule of the at least one organic halogencontaining component further comprises: at least two carbon atoms; at least three different elements; means of directing a charged particle beam onto the lithography object to induce an etching operation on the lithography object.

35. Device according to Claim 34, wherein the molecule and / or the etch gas has the properties according to any one of Claims 2 to 5 and / or 8 to 12.

36. Device according to Claim 34, wherein the device does not comprise means for generating a plasma that comes into contact with the etch gas.

37. Device according to any of Claims 34 to 36, wherein the means of providing an etch gas comprises a vessel containing the organic halogen-containing component.

38. Device according to Claim 37, wherein the molecule in the means of providing an etch gas has the properties according to any one of Claims 2 to 11.

39. Device according to any of Claims 34 to 38, further comprising: means for automatically executing the method according to any of Claims 1 to 32.

40. Device according to any of Claims 34 to 39, further comprising a storage medium having a computer program according to Claim 33 stored thereon.

41. Lithography object processed by a method according to any of Claims 1 to 32.

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