Semiconductor laser device and method for manufacturing semiconductor laser device

Abstract

A semiconductor laser device (1) comprises: a semiconductor laser element (200) that emits laser light from a light emission end surface; and a lens unit (100) that has a cylindrical lens (110) and a first mounting surface. The semiconductor laser element (200) has an active layer. The cylindrical lens (110), when the laser light is incident thereon, reduces the divergence angle of the laser light in a fast-axis direction. The first mounting surface is fixed to a first mounted surface. In a plan view of the active layer, a bus (115) of the cylindrical lens (110) is inclined with respect to the first mounted surface.

Description

Semiconductor laser device and method for manufacturing the same

[0001] The present disclosure relates to a semiconductor laser device and a method for manufacturing a semiconductor laser device.

[0002] Japanese Patent Application Laid-Open No. 2003-124222 discloses a semiconductor laser device including a semiconductor laser element and a collimator lens that collimates laser light emitted from the semiconductor laser element in the fast axis direction.

[0003] JP 2014-170888 A

[0004] However, in the semiconductor laser device disclosed in Patent Document 1, the position adjustment precision of the collimator lens of the semiconductor laser device is low.

[0005] Therefore, an object of the present disclosure is to provide a semiconductor laser device in which the position of a collimator lens can be adjusted with high precision.

[0006] In order to achieve the above object, a semiconductor laser device according to one aspect of the present disclosure includes a semiconductor laser element that emits laser light from a light-emitting end face, and a lens portion having a cylindrical lens and a first mounting surface, wherein the semiconductor laser element has an active layer, the cylindrical lens receives the laser light and reduces the divergence angle of the laser light in the fast axis direction, the first mounting surface is fixed to a first mounting surface, and in a planar view of the active layer, the generatrix of the cylindrical lens is inclined with respect to the first mounting surface.

[0007] Furthermore, a method for manufacturing a semiconductor laser device according to one aspect of the present disclosure is a method for manufacturing a semiconductor laser device, the semiconductor laser device comprising: a semiconductor laser element that emits laser light from a light emitting end face; and a lens portion having a cylindrical lens and a first mounting surface, the semiconductor laser element having an active layer, the cylindrical lens reducing the spread angle of the laser light in the fast axis direction, and the first mounting surface being fixed to a first mounting surface, the manufacturing method including: an arrangement step of arranging the lens portion on the first mounting surface so that, in a planar view of the active layer, the generatrix of the cylindrical lens is inclined with respect to the first mounting surface; an alignment step of making the laser light emitted from the semiconductor laser element incident on the cylindrical lens and moving the arranged lens portion in a direction parallel to the first mounting surface; and a fixing step of fixing the moved lens portion to the first mounting surface.

[0008] According to the present disclosure, it is possible to provide a semiconductor laser device in which the position of the collimator lens can be adjusted with high precision.

[0009] FIG. 1 is a perspective view showing the configuration of a semiconductor laser device according to a first embodiment. FIG. 2 is an enlarged perspective view of a semiconductor laser element according to the first embodiment. FIG. 3 is a plan view showing the configuration of a semiconductor laser device according to the first embodiment. FIG. 4 is a front view of the semiconductor laser device according to the first embodiment. FIG. 5 is a plan view showing the overall configuration of a light source module according to the first embodiment. FIG. 6 is a schematic view showing steps of a method for manufacturing a semiconductor laser device according to the first embodiment. FIG. 7 is a schematic view showing steps of a method for manufacturing a semiconductor laser device according to the first embodiment. FIG. 8 is a schematic view showing steps of a method for manufacturing a semiconductor laser device according to the first embodiment. FIG. 9 is a schematic view showing steps of a method for manufacturing a semiconductor laser device according to the first embodiment. FIG. 10 is a plan view of a semiconductor laser device after an alignment step according to the first embodiment has been performed. FIG. 11A is a graph showing an example of the relationship between the deviation of the position of a cylindrical lens from a design value and the relative efficiency η when the light source module shown in FIG. 5 is configured using the semiconductor laser device according to the first embodiment. FIG. 11B is a graph showing the relationship between the angle α and the relative efficiency η according to the first embodiment. FIG. 12 is a schematic diagram showing steps in a method for manufacturing a semiconductor laser device according to Modification 1 of Embodiment 1. FIG. 13 is a schematic diagram showing steps in a method for manufacturing a semiconductor laser device according to Modification 1 of Embodiment 1. FIG. 14 is a schematic diagram showing steps in a method for manufacturing a semiconductor laser device according to Modification 1 of Embodiment 1. FIG. 15 is a schematic diagram showing steps in a method for manufacturing a semiconductor laser device according to Modification 1 of Embodiment 1. FIG. 16A is a schematic diagram showing steps in a method for manufacturing a semiconductor laser device according to another example of Modification 1 of Embodiment 1. FIG. 16B is a schematic diagram showing steps in a method for manufacturing a semiconductor laser device according to another example of Modification 1 of Embodiment 1. FIG. 16C is a perspective view of a lens unit according to Modification 2 of Embodiment 1. FIG. 17 is a perspective view of a lens unit according to Modification 3 of Embodiment 1. FIG. 18 is a perspective view showing a configuration of a semiconductor laser device according to Embodiment 2. FIG. 19A is a perspective view showing a configuration of a laser unit according to Embodiment 2. FIG. 19B is a perspective view showing a configuration of a lens unit according to Embodiment 2. FIG. 19C is a plan view showing a configuration of a semiconductor laser device according to Embodiment 2.FIG. 20A is a plan view of a semiconductor laser device according to a second embodiment. FIG. 20B is a cross-sectional view showing a cut surface of the semiconductor laser device taken along line XXB-XXB in FIG. 20A . FIG. 20C is a plan view of a semiconductor laser device according to the second embodiment. FIG. 21 is a perspective view showing a configuration of a semiconductor laser device according to a third embodiment. FIG. 22 is a plan view showing a configuration of a semiconductor laser device according to the third embodiment. FIG. 23 is a front view showing a configuration of a semiconductor laser device according to the third embodiment. FIG. 24 is a schematic view showing steps of a method for manufacturing a semiconductor laser device according to the third embodiment. FIG. 25 is a schematic view showing steps of a method for manufacturing a semiconductor laser device according to the third embodiment. FIG. 26 is a schematic view showing steps of a method for manufacturing a semiconductor laser device according to the third embodiment. FIG. 27 is a schematic view showing steps of a method for manufacturing a semiconductor laser device according to the third embodiment. FIG. 28 is a plan view of a laser unit according to a first modification of the third embodiment. FIG. 29 is a plan view of a laser unit according to a second modification of the third embodiment. FIG. 30 is a plan view of a laser unit according to a third modification of the third embodiment. FIG. 31 is a plan view of a submount according to Modification 4 of Embodiment 3. FIG. 32 is a schematic diagram showing steps in a method for manufacturing a submount according to Modification 4 of Embodiment 3. FIG. 33 is a perspective view showing a configuration of a semiconductor laser device according to Modification 5 of Embodiment 3. FIG. 34 is an exploded plan view showing a configuration of a semiconductor laser device according to Modification 5 of Embodiment 3. FIG. 35A is a schematic diagram showing steps in a manufacturing process of a semiconductor laser device according to Modification 5 of Embodiment 3. FIG. 35B is a schematic diagram showing steps in a manufacturing process of a semiconductor laser device according to Modification 5 of Embodiment 3. FIG. 35C is a schematic diagram showing steps in a manufacturing process of a semiconductor laser device according to Modification 5 of Embodiment 3. FIG. 35D is a schematic diagram showing steps in a manufacturing process of a semiconductor laser device according to Modification 5 of Embodiment 3. FIG. 36 is a perspective view showing a configuration of a semiconductor laser device according to Embodiment 4. FIG. 37 is a plan view showing a configuration of a semiconductor laser device according to Embodiment 4. FIG. 38 is a front view showing a configuration of a semiconductor laser device according to Embodiment 4. FIG. 39 is a perspective view showing a configuration of a semiconductor laser device according to Embodiment 5. FIG. 40 is a plan view showing a configuration of a semiconductor laser device according to Embodiment 5.Fig. 41 is a front view showing the configuration of a semiconductor laser device according to embodiment 5. Fig. 42 is a plan view showing the configuration of a semiconductor laser device according to embodiment 6. Fig. 43 is a front view showing the configuration of a semiconductor laser device according to embodiment 6. Fig. 44 is a side view showing the configuration of a semiconductor laser device according to embodiment 6. Fig. 45 is a plan view showing the configuration of a semiconductor laser device according to embodiment 7. Fig. 46 is a side view showing the configuration of a semiconductor laser device according to embodiment 7. Fig. 47 is a perspective view showing the configuration of a fixing member according to embodiment 7.

[0010] Semiconductor laser devices according to embodiments of the present disclosure will be described in detail below with reference to the drawings. Note that each of the embodiments described below represents a specific example of the present disclosure. Therefore, the numerical values, shapes, materials, components, component arrangements and connection forms, steps, and step orders shown in the following embodiments are merely examples and are not intended to limit the present disclosure.

[0011] Furthermore, each figure is a schematic diagram and is not necessarily an exact illustration. Therefore, for example, the scales of the figures do not necessarily match. Furthermore, in each figure, substantially the same components are given the same reference numerals, and redundant explanations are omitted or simplified.

[0012] Furthermore, in this specification, terms indicating the relationship between elements, such as "equal," terms indicating the shape of elements, such as "flat" or "rectangular," and numerical ranges are not expressions that only express a strict meaning, but are expressions that also include a substantially equivalent range, for example, a difference of about a few percent.

[0013] Furthermore, in this specification, the terms "above" and "below" do not refer to the upward direction (vertically upward) and downward direction (vertically downward) in absolute spatial recognition, but are used as terms defined by a relative positional relationship based on the stacking order in a stacked configuration. Furthermore, the terms "above" and "below" are applied not only to a case where two components are arranged with a gap between them and another component exists between the two components, but also to a case where two components are arranged closely together and the two components are in contact with each other.

[0014] The x-axis, y-axis, and z-axis represent the three axes of a three-dimensional Cartesian coordinate system related to the semiconductor laser device. The positive direction of the z-axis may be referred to as "upward," and the negative direction of the z-axis may be referred to as "downward." The upper surface may be referred to as "top surface," and the lower surface may be referred to as "bottom surface."

[0015] In each embodiment and each modification, the direction of travel of the laser light immediately after being emitted from the semiconductor laser device along the optical axis is defined as the negative y-axis direction, the direction parallel to the fast axis of the laser light immediately after being emitted from the semiconductor laser device is defined as the z-axis direction, and the direction parallel to the slow axis of the laser light immediately after being emitted from the semiconductor laser device is defined as the x-axis direction. The y-axis direction is also the resonator direction.

[0016] In the embodiments described below, "plan view" means viewing the semiconductor laser element from a direction perpendicular to the active layer of the semiconductor laser element provided in the semiconductor laser device, that is, viewing the semiconductor laser device from the positive side of the z-axis. The view in this state is called a plan view. "Front view" means viewing the semiconductor laser device from the negative side of the y-axis, and the view in this state is called a front view. "Side view" means viewing the semiconductor laser device from the positive side of the x-axis, and the view in this state is called a side view.

[0017] First Embodiment [Configuration] The configuration of a semiconductor laser device 1 according to a first embodiment will be described.

[0018] FIG. 1 is a perspective view showing the configuration of a semiconductor laser device 1 according to the present embodiment.

[0019] The semiconductor laser device 1 includes a lens portion 100 and a laser unit 20 .

[0020] The laser unit 20 is a unit that includes a semiconductor laser element 200 and a submount 230 .

[0021] The submount 230 is a flat-plate-shaped mounting base on which the semiconductor laser element 200 is mounted. The semiconductor laser element 200 is mounted above a top surface 234 (a plane on the positive z-axis side) of the flat-plate-shaped submount 230. The top surface 234 of the submount 230 is a plane parallel to the xy plane. A bonding member may be provided between the semiconductor laser element 200 and the submount 230. As described above, the submount 230 has a flat plate shape, and thus has a first side surface 231 on the negative y-axis side, a second side surface 232 on the positive x-axis side, and a third side surface 233 on the negative x-axis side. The first side surface 231 is a plane parallel to the zx plane. In other words, the first side surface 231 is a plane perpendicular to the top surface 234. The second side surface 232 and the third side surface 233 are planes parallel to the yz plane. That is, the second side surface 232 and the third side surface 233 are planes perpendicular to the first side surface 231 and planes perpendicular to the top surface 234 .

[0022] The submount 230 according to this embodiment is a component having a first mounting surface. A first side surface 231 of the submount 230 corresponds to the first mounting surface. In other words, the first mounting surface is a plane perpendicular to an upper surface 234 on which the semiconductor laser element 200 is disposed.

[0023] The submount 230 is made of, for example, an insulating material such as a crystal, such as AlN or SiC, or a ceramic.

[0024] Next, the semiconductor laser device 200 will be described.

[0025] 2 is an enlarged perspective view of the semiconductor laser device 200 according to this embodiment. The semiconductor laser device 200 is a device that emits laser light L1.

[0026] The semiconductor laser element 200 is a laser element including a semiconductor laminated film formed on a semiconductor substrate and an optical waveguide 200r. The semiconductor laminated film includes an active layer 200a, that is, the semiconductor laser element 200 includes the active layer 200a.

[0027] An optical waveguide 200r is formed in the central portion of the semiconductor laser element 200 on the active layer 200a side. The optical waveguide 200r includes a part of the active layer 200a. The laser light L1 is emitted from a light-emitting end face 205 of the semiconductor laser element 200. More specifically, the end of the optical waveguide 200r on the light-emitting end face 205 side corresponds to the light-emitting region 201. The laser light L1 is emitted from the light-emitting region 201. A p-electrode 200p is formed on the surface of the semiconductor laser element 200 on the active layer 200a side, and an n-electrode 200n is formed on the surface opposite to the surface on the active layer 200a side.

[0028] The semiconductor laser element 200 has a rectangular shape that is long in the waveguiding direction of the optical waveguide 200r. The width (width in the x-axis direction) of the semiconductor laser element 200 is, for example, 100 μm or more and 1 mm or less, and the length (length in the y-axis direction) of the semiconductor laser element 200 is, for example, 500 μm or more and 10 mm or less. The width (width in the x-axis direction) of the optical waveguide 200r is, for example, 1 μm or more and 500 μm or less, and the length (length in the y-axis direction) of the optical waveguide 200r is the same value as the length of the semiconductor laser element 200. The size of the light-emitting region 201 is the same as the size at the light-emitting end face 205 of the optical waveguide 200r, and the thickness of the semiconductor laminated film in the stacking direction (z-axis direction) is, for example, 0.5 μm or more and 3 μm or less.

[0029] The semiconductor laser element 200 emits laser light L1 having an emission peak wavelength. The semiconductor laser element 200 can change the emission peak wavelength of the emitted laser light L1 depending on the semiconductor material of the semiconductor laser element 200. For example, by using a nitride-based semiconductor laser element containing nitrides of Al, Ga, and In as main components as the semiconductor laser element 200, the semiconductor laser element 200 can emit laser light L1 having an emission peak wavelength of, for example, 350 nm or more and 550 nm or less.

[0030] Furthermore, for example, by using a semiconductor laser element 200 whose main component is a semiconductor made of Al, Ga, In, As, or P, the semiconductor laser element 200 can emit laser light L1 having an emission peak wavelength of, for example, 600 nm or more and 1600 nm or less. Note that the semiconductor laser element 200 is not limited to semiconductor laser elements made of the above-mentioned semiconductor materials, and the wavelength of the laser light L1 emitted by the semiconductor laser element 200 is not limited to the above-mentioned wavelength.

[0031] The semiconductor laser element 200 emits laser light L1 having a predetermined divergence angle. More specifically, the semiconductor laser element 200 converts electric power input from the outside to the optical waveguide 200r into stimulated emission light such as laser light L1 and emits the light from a light-emitting region 201, which is one end of the optical waveguide 200r. In this case, the fast axis of the laser light L1 is an axis in the stacking direction of the semiconductor laminated film of the semiconductor laser element 200. In addition, the slow axis, which is perpendicular to the fast axis, is an axis parallel to the stacking plane of the semiconductor laminated film.

[0032] The laser light L1 is emitted while spreading from the light emitting region 201. The spreading angle of the emitted laser light L1 is defined as 1 / (e ２ ), the divergence angle θf in the fast axis direction is, for example, between 30° and 70°, and the divergence angle θs in the slow axis direction is, for example, between 3° and 25°. In FIG. 2, the light intensity of the laser light L1 is 1 / (e ２ ) is drawn at the position where the value of θ is reached, and the spread of the laser light L1 is expressed.

[0033] 2 shows an emission direction d1 of the laser light L1 emitted from the semiconductor laser element 200. The emission direction d1 is parallel to and overlaps with the y-axis direction.

[0034] In this embodiment, the optical waveguide 200r of the semiconductor laser element 200 is disposed on the submount 230 side. That is, the semiconductor laser element 200 is fixed by so-called junction-down mounting. The active layer 200a of the semiconductor laser element 200 is disposed so as to be parallel to the upper surface 234 of the submount 230. That is, the active layer 200a is parallel to the surface of the semiconductor laser element 200 on the submount 230 side.

[0035] Therefore, the active layer 200a is a layer parallel to the xy plane, and the fast axis of the laser light L1 immediately after being emitted from the semiconductor laser element 200 is the z-axis direction, and the slow axis of the laser light L1 is an axis parallel to the x-axis direction.

[0036] In this embodiment, the semiconductor laser element 200 is disposed on the upper surface 234 of the submount 230 so that the light emitting end surface 205 is parallel to the first mounting surface of the submount 230. That is, the semiconductor laser element 200 is fixed to the submount 230 so that the optical waveguide 200r is parallel to the second side surface 232 and the third side surface 233. The light emitting end surface 205 of the semiconductor laser element 200 is fixed so that it coincides with the first side surface 231 of the submount 230 or protrudes slightly from the first side surface 231 toward the emission side of the laser light L1.

[0037] The lens unit 100 also has a cylindrical lens 110 and a first installation surface. More specifically, the lens unit 100 according to the present embodiment has the cylindrical lens 110 and a support member 120 including the first installation surface. The cylindrical lens 110 will be described below.

[0038] In this embodiment, the laser light L1 emitted from the semiconductor laser element 200 is directly incident on the cylindrical lens 110. The laser light L1 emitted from the semiconductor laser element 200 is incident on the cylindrical lens 110, and the cylindrical lens 110 changes the divergence angle of the laser light L1 in the fast axis direction. In this embodiment, the cylindrical lens 110 changes the divergence angle of the laser light L1 in the fast axis direction to be smaller, that is, emits the laser light L1 with a small divergence angle in the fast axis direction. Note that the cylindrical lens 110 may change the divergence angle of the laser light L1 in the fast axis direction to be larger, that is, emit the laser light L1 with a large divergence angle in the fast axis direction.

[0039] The divergence angle of the laser beam L1 emitted from the cylindrical lens 110 in the fast axis direction is, for example, between −1° and +1°. An angle with a negative sign indicates convergence. The cylindrical lens 110 may be a collimator lens that collimates the laser beam L1 in the fast axis direction.

[0040] The cylindrical lens 110 is an optical component having a power axis having power (refractive power) and a non-power axis. The power axis and the non-power axis are arranged perpendicular to each other. That is, the cylindrical lens 110 has a first cylindrical surface. The cylindrical lens 110 has a cylindrical surface that is convexly curved toward the power axis, i.e., the surface of a convex cylinder. The cylindrical lens 110 is a convex cylindrical lens, and is a convex lens.

[0041] The cylindrical lens 110 has an incident surface 110R onto which the laser light L1 is incident and an exit surface 110F from which the laser light L1 is emitted. In this embodiment, the cylindrical lens 110 is a plano-convex cylindrical lens in which the incident surface 110R is flat and the exit surface 110F is convex. In this embodiment, the incident surface 110R is a surface inclined at an angle α from a plane parallel to the zx plane. The exit surface 110F is a first cylindrical surface, which is a convex surface whose curved surface is expressed by a spherical function or an aspherical function. In this embodiment, a plano-convex cylindrical lens is used as the cylindrical lens 110. However, a biconvex cylindrical lens, such as a convex meniscus cylindrical lens having one convex side and the other concave side, may also be used.

[0042] The cylindrical lens 110 is a member made of an inorganic transparent material such as glass, and an anti-reflection coating film that matches the wavelength of the laser light L1 is formed on the incident surface 110R and the exit surface 110F of the laser light L1.

[0043] Furthermore, the generatrix 115 of the cylindrical lens 110 will be described.

[0044] The cylindrical lens 110 is a cylindrical lens having a first cylindrical surface. The first cylindrical surface has a generatrix 115 shown by a dashed line in FIG. 1 . The exit surface 110F of the cylindrical lens 110 is a convex first cylindrical surface. Generally, a generatrix is ​​a straight line at each position when the cylindrical surface (curved surface) of the first cylindrical surface is formed by linear movement (when drawn by linear movement). Here, the generatrix 115 shown by the dashed line is a straight line that follows the convex vertex of the surface of a convex cylinder, among countless generatrixes. In this embodiment, the generatrix 115 is parallel to the entrance surface 110R.

[0045] Next, the support member 120 of the lens unit 100 will be described.

[0046] Fig. 3 is a plan view showing the configuration of the semiconductor laser device 1 according to the present embodiment, and Fig. 4 is a front view of the semiconductor laser device 1 according to the present embodiment.

[0047] The semiconductor laser element 200 is disposed on the upper surface 234 of the submount 230, while the support member 120 is a member that is bonded to the cylindrical lens 110 and supports the cylindrical lens 110. More specifically, the support member 120 is bonded to the incident surface 110R of the cylindrical lens 110. The support member 120 is also a member that is bonded to the submount 230.

[0048] The support member 120 is an elongated member extending in the x-axis direction, and more specifically, is a member having a triangular prism shape. The support member 120 has a first parallel surface 121 (an example of a predetermined surface) parallel to a first side surface 231 of the submount 230, and a first inclined surface 122 inclined with respect to the first side surface 231. The first inclined surface 122 is a plane inclined in the x-axis direction from the zx plane, in other words, a plane inclined in a direction rotated around the z axis from the first side surface 231 (zx plane). In this embodiment, the first parallel surface 121 is a plane on the positive side of the y axis, and the first inclined surface 122 is a plane on the negative side of the y axis.

[0049] The first parallel surface 121 is a surface parallel to the zx plane. In this embodiment, the first parallel surface 121 of the support member 120 corresponds to the first installation surface. The first parallel surface 121, which is the first installation surface, is joined and fixed to the first side surface 231, which is the first installation surface. In this embodiment, the first installation surface (first side surface 231) and the first installation surface (first parallel surface 121) are in direct contact with each other.

[0050] The first inclined surface 122 is bonded to a flat surface that is the incident surface 110R of the cylindrical lens 110. The flat surface that is the incident surface 110R of the cylindrical lens 110 and the generatrix 115 are parallel to the first inclined surface 122.

[0051] Here, we focus on the generating line 115 in this embodiment, the plane which is the incident surface 110R of the cylindrical lens 110, the first installation surface (first parallel surface 121), the first inclined surface 122, and the first installation surface (first side surface 231).

[0052] As described above, the first installation surface (first parallel surface 121) and the first installation surface (first side surface 231) are surfaces parallel to the zx plane.

[0053] The generating line 115, the plane that is the incident surface 110R of the cylindrical lens 110, and the first inclined surface 122 are parallel to each other and inclined with respect to the first side surface 231 (zx plane), and in this embodiment, the generating line 115 is inclined in a direction rotated around the z axis from the first side surface 231 (zx plane). In other words, in a plan view of the active layer 200a, the generating line 115 of the cylindrical lens 110 is inclined with respect to the first installation surface (first side surface 231).

[0054] In a plan view, the angle formed between the generatrix 115 of the cylindrical lens 110 and the first installation surface (first side surface 231) is defined as angle α. As an example, angle |α| is less than 45°.

[0055] The support member 120 is formed by processing a substrate of a semiconductor material such as glass or silicon, for example, by partial etching, polishing, or cutting. The support member 120 may also be formed of a metal such as Fe or an Fe alloy, and Al ２ O ３ , ZrO ２ , Si ３ N ４ Alternatively, the support member 120 may be made of a ceramic such as AlN. The support member 120 may be made of a material with low thermal conductivity.

[0056] 3 , the length of the first parallel surface 121 in the x-axis direction (slow-axis direction) is different from the length of the first side surface 231 in the x-axis direction. More specifically, the length of the first parallel surface 121 in the x-axis direction (slow-axis direction) is longer than the length of the first side surface 231 in the x-axis direction. Note that the length of the first parallel surface 121 in the x-axis direction (slow-axis direction) may be shorter than the length of the first side surface 231 in the x-axis direction.

[0057] Next, the two first joint members 161 shown in Fig. 3 will be described. Note that, for the sake of simplicity, the illustration of the two first joint members 161 is omitted in Fig. 1 above.

[0058] The submount 230 and the support member 120 are joined by two first joining members 161. More specifically, one first joining member 161 joins the first parallel surface 121 and the second side surface 232, and the other first joining member 161 joins the first parallel surface 121 and the third side surface 233.

[0059] As described above, the length of the first parallel surface 121 in the x-axis direction is longer than the length of the first side surface 231 in the x-axis direction. Therefore, as shown in Fig. 3 , the first parallel surface 121 has two regions that are not covered by the first side surface 231. Of the two regions, the region on the positive side of the x-axis and the second side surface 232 are joined by one first joining member 161, and the region on the negative side of the x-axis and the third side surface 233 are joined by another first joining member 161.

[0060] As described above, the length in the x-axis direction of the first parallel surface 121 may be shorter than the length in the x-axis direction of the first side surface 231. In this case, the first side surface 231 has two regions that are not covered by the first parallel surface 121, and one first bonding member 161 is provided in each of the two regions to bond the submount 230 and the support member 120.

[0061] The first bonding member 161 is made of an adhesive member such as an ultraviolet curing adhesive or a heat curing adhesive, or an inorganic adhesive member made of an inorganic material such as low-melting-point glass or a solder material.

[0062] As described above, the semiconductor laser device 1 further includes two first bonding members 161 .

[0063] In the present embodiment, the submount 230 and the lens unit 100 are bonded together by the two first bonding members 161. However, this is not limiting. For example, the cylindrical lens 110, the support member 120, and the submount 230 may be bonded together by a direct bonding method such as optical contact or metal bonding.

[0064] Here, a light source module 10 including the semiconductor laser device 1 according to this embodiment will be described.

[0065] FIG. 5 is a plan view showing the overall configuration of the light source module 10 according to the present embodiment.

[0066] 5, the light source module 10 includes a package 501, a plurality of semiconductor laser devices (here, semiconductor laser devices 1, 2, 3, 4, 5, and 6), a plurality of slow-axis collimator lenses 600 (SAC lenses 600), a plurality of reflecting mirrors 700, a condenser lens 800, an optical fiber 550, a plurality of metal wires, and an auxiliary wiring member 570. The optical fiber 550 has a core 550a that guides the laser light.

[0067] The light source module 10 is a module that can spatially combine laser beams emitted from a plurality of semiconductor laser devices using an optical system and emit the combined laser beam. The combined laser beam is incident on a core 550a, which is an object, within the light source module 10, and the laser beam propagates through an optical fiber 550 and is emitted from the light source module 10 to the outside. In other words, the incidence of the laser beam on the core 550a at this time is called combining. The light source module 10 may also be a module that can combine the wavelengths of laser beams emitted from a plurality of semiconductor laser devices using an optical system and emit the combined laser beam. In FIG. 5, the light intensity of the laser beam is 1 / (e ２ ) are indicated by dashed lines, which represent the spread of the laser light.

[0068] The package 501 includes a base 502 , a frame 503 , a lid (not shown), and a pair of lead pins 552 .

[0069] The base 502 has a plurality of stair-like steps (not shown), and a semiconductor laser device, a slow-axis collimator lens 600 (hereinafter referred to as SAC lens 600), and a pair of reflecting mirrors 700 are arranged on each step. The frame 503 is arranged perpendicular to the base 502 of the package 501. The frame 503 surrounds the plurality of semiconductor laser devices and the like. A pair of lead pins 552 are inserted into the frame 503, and the pair of lead pins 552 electrically connect the outside and the inside of the package 501. The frame 503 has a rectangular frame shape in a plan view and is made of, for example, Cu, a Cu alloy, an Fe—Ni—Co alloy, or Al. The base 502 is made of, for example, Cu, a Cu alloy, Al, or a ceramic with high thermal conductivity (e.g., AlN or BeO). The lid is a member that covers the top of the package 501 and is made of, for example, an inorganic material such as a metal or ceramic material. The cover has a rectangular shape in a plan view and covers the entire upper surface of the frame body 503 .

[0070] The package 501 has a space for accommodating a plurality of semiconductor laser devices. The space for accommodating the plurality of semiconductor laser devices is hermetically sealed, and the package 501 corresponds to an airtight package that hermetically seals the plurality of semiconductor laser devices.

[0071] In this embodiment, the plurality of semiconductor laser devices include semiconductor laser device 1, semiconductor laser device 2, semiconductor laser device 3, semiconductor laser device 4, semiconductor laser device 5, and semiconductor laser device 6. The plurality of semiconductor laser devices are arranged side by side in a predetermined direction. The plurality of semiconductor laser devices each have the same configuration. That is, each of the semiconductor laser devices 2 to 6 has the same configuration as the semiconductor laser device 1 described above.

[0072] The plurality of metal wires include metal wires 561, 562, 563, 564, 565, 566, 567, and 568. One lead pin 552 and the semiconductor laser device 1 are electrically connected by the metal wire 561. Furthermore, the semiconductor laser devices 1 and 2 are electrically connected by the metal wire 562, the semiconductor laser devices 2 and 3 are electrically connected by the metal wire 563, the semiconductor laser devices 3 and 4 are electrically connected by the metal wire 564, the semiconductor laser devices 4 and 5 are electrically connected by the metal wire 565, and the semiconductor laser devices 5 and 6 are electrically connected by the metal wire 566. The semiconductor laser device 6 and the auxiliary wiring member 570 are electrically connected by the metal wire 567, and the auxiliary wiring member 570 and the other lead pin 552 are electrically connected by the metal wire 568. As a result, power is supplied to the semiconductor laser element 200 included in each of the semiconductor laser devices 1 to 6.

[0073] As described above, the semiconductor laser device 1 (more specifically, the semiconductor laser element 200) emits laser light L1. Similarly, the semiconductor laser devices 2 to 6 emit laser light L2, L3, L4, L5, and L6, respectively. Each of the multiple laser light beams (i.e., laser light L1 to L6) emitted from the multiple semiconductor laser devices is incident on the SAC lens 600.

[0074] The SAC lens 600 is a lens having a convex cylindrical surface. As an example, the SAC lens 600 is made of glass with an anti-reflection coating formed on its surface, and in this embodiment, it is a plano-convex cylindrical lens. While a plano-convex cylindrical lens is used as the SAC lens 600 in this embodiment, a biconvex cylindrical lens or a convex meniscus cylindrical lens with one side convex and the other concave may also be used. Furthermore, a concave reflective cylindrical mirror may also be used as an optical element that combines the SAC lens 600 and the reflective mirror 700.

[0075] The SAC lens 600 has a cylindrical surface that is convexly curved in the power axis, i.e., a convex cylindrical surface. The SAC lens 600 has a non-power axis in a direction perpendicular to the power axis. The SAC lens 600 is a lens that has power in the slow axis of the laser light. Each of the multiple SAC lenses 600 collimates the component of the laser light in the slow axis direction that is incident on it.

[0076] With the above configuration, the laser beam L1 emitted from the semiconductor laser device 1 and passed through the SAC lens 600 travels as an emitted beam with its fast axis and slow axis collimated. The same applies to the laser beams L2 to L6.

[0077] Furthermore, a reflecting mirror 700 is arranged in the emission direction d1 of the laser beam L1 from the semiconductor laser device 1. The same applies to the laser beams L2 to L6.

[0078] Each of the plurality of reflecting mirrors 700 is an optical component having an incident surface onto which the laser light that has passed through each of the plurality of SAC lenses 600 is incident. The reflecting mirror 700 reflects the laser light L1 collimated by the cylindrical lens 110 and the SAC lens 600, and deflects the direction of the laser light L1 by 90 degrees. The same applies to the laser lights L2 to L6.

[0079] The multiple laser beams, each reflected by the reflecting mirror 700, have the same optical axis in the fast axis when each laser beam is emitted from the semiconductor laser element 200, and are spatially combined so as to be aligned at a predetermined interval in the slow axis, and reach the focusing lens 800 fixed to the base 502.

[0080] The condenser lens 800 is an optical component having an incident surface onto which the laser beams that have passed through each of the multiple SAC lenses 600 are incident. Furthermore, the condenser lens 800 is also an optical component onto which the laser beams that have passed through each of the multiple reflecting mirrors 700 are incident. In this embodiment, the condenser lens 800 is a lens that condenses the multiple laser beams that have reached it. The multiple parallel laser beams, each having the same fast axis as the optical axis due to the reflecting mirrors 700, are incident on the condenser lens 800. Furthermore, the multiple laser beams condensed by the condenser lens 800 are incident on the incident surface, which is the end face of the core 550a of the optical fiber 550, which is an example of the target. By providing such a condenser lens 800, the multiple laser beams can be efficiently condensed onto the end face of the core 550a, which is the target. In other words, the multiple laser beams emitted from the multiple semiconductor laser devices and condensed by the condenser lens 800 are coupled to the optical fiber 550 and the core 550a. At this time, the rate at which the multiple laser beams are coupled to the core 550a (coupling efficiency) is determined depending on the positional accuracy of each of the multiple cylindrical lenses 110. Specifically, the coupling efficiency is determined depending on the positional accuracy of the cylindrical lenses 110 relative to the light-emitting region 201 of the semiconductor laser device 200. More specifically, the coupling efficiency is determined depending on the position and positional accuracy of the generatrix 115 of the cylindrical lenses 110 relative to the position of the light-emitting region 201. The spot size at the incident end faces of the optical fiber 550 and the core 550a is determined depending on the distance between the cylindrical lenses 110 and their generatrix 115 and the light-emitting region 201. The position of the spot at the incident end faces of the optical fiber 550 and the core 550a is determined depending on the fast-axis position of the cylindrical lenses 110 and their generatrix 115 and the light-emitting region 201.

[0081] The optical fiber 550 passes through the frame 503. Therefore, the laser light coupled to the optical fiber 550 is guided to the outside of the light source module 10.

[0082] It is possible to use multiple SAC lenses 600 corresponding to multiple semiconductor laser devices that all have the same shape, and it is possible to use multiple reflecting mirrors 700 corresponding to multiple semiconductor laser devices that all have the same shape.

[0083] [Manufacturing Method] Furthermore, an example of a manufacturing method for the semiconductor laser device 1 will be described with reference to FIGS.

[0084] 6, 7, 8, and 9 are schematic diagrams showing steps of a method for manufacturing the semiconductor laser device 1 according to this embodiment. The manufacturing method according to this embodiment includes a preparation step, a placement step, an alignment step, and a fixing step.

[0085] The semiconductor laser device 1 is manufactured in the following order.

[0086] First, a preparation step is performed in which the lens section 100 and the laser unit 20 are manufactured and prepared.

[0087] In the preparation step, first, the semiconductor laser element 200 is placed above the upper surface 234 (the plane on the positive side of the z-axis) of the submount 230, thereby manufacturing the laser unit 20. At this time, the semiconductor laser element 200 is mounted on the submount 230 with the junction down. The light-emitting end surface 205 of the semiconductor laser element 200 is fixed so as to coincide with the first side surface 231 of the submount 230 or to protrude slightly from the first side surface 231 toward the emission side of the laser light L1, for example, by a distance of 0 μm to 30 μm. Then, for example, the laser unit 20 is placed and fixed on a base 502 shown in FIG. 5 . At this time, a pair of lead pins 552, a plurality of reflective mirrors 700, a condenser lens 800, an optical fiber 550, a plurality of metal wires, and an auxiliary wiring member 570 are fixed to the base 502 and a frame 503 shown in FIG. 5 .

[0088] Next, the cylindrical lens 110 is bonded to the support member 120 to manufacture the lens unit 100. More specifically, the first inclined surface 122 of the support member 120 is bonded to the flat surface that is the incident surface 110R of the cylindrical lens 110.

[0089] Next, as shown in Fig. 6, an arrangement step is performed. In the arrangement step, the lens section 100 is arranged at a predetermined position of the laser unit 20. More specifically, the lens section 100 is arranged on the first side surface 231 of the submount 230, which is the first installation surface. Here, the lens section 100 is arranged so that the laser light L1 emitted from the semiconductor laser element 200 is incident on the cylindrical lens 110 and so that the generatrix 115 is inclined with respect to the first installation surface (first side surface 231) in a plan view.

[0090] 6 shows the placement step, and the direction in which the lens unit 100 is placed on the laser unit 20 is indicated by a hollow arrow. As described above, the generatrix 115 and the first inclined surface 122 are parallel to each other and inclined with respect to the zx plane, and the first installation surface (first parallel surface 121) and the first installation surface (first side surface 231) are parallel to the zx plane. Therefore, by placing the first installation surface (first parallel surface 121) so that it is in direct contact with the first installation surface (first side surface 231), the lens unit 100 is placed so that the generatrix 115 is inclined with respect to the first installation surface (first side surface 231).

[0091] Even after this placement step is completed, the lens section 100 and the laser unit 20 are not joined together, that is, the relative positions of the lens section 100 and the submount 230 are not fixed. At this stage, the lens section 100 can be moved relative to the position of the submount 230.

[0092] In this placement step, a plurality of SAC lenses 600 are also placed at predetermined positions on the base 502 , but like the lens unit 100 , they are not fixed to the base 502 .

[0093] Next, as shown in FIGS. 7 and 8 , an alignment step is performed. FIG. 7 shows the semiconductor laser device 1 before the alignment step, and FIG. 8 shows the semiconductor laser device 1 after the alignment step. The alignment step is a process of moving the lens unit 100 arranged in the arrangement step. More specifically, the alignment step is a process of moving the lens unit 100 in a direction parallel to the first installation surface (first side surface 231). Here, since the first installation surface (first side surface 231) is parallel to the zx plane, the lens unit 100 can be moved, for example, in the x-axis direction. The lens unit 100 can be moved along the first installation surface (first side surface 231), where the first installation surface (first parallel surface 121) of the lens unit 100 moves relative to the first installation surface (first side surface 231). In FIG. 7 , the movement direction of the lens unit 100 is indicated by an arrow. The alignment step is a process of making the laser light L1 emitted from the semiconductor laser element 200 incident on the cylindrical lens 110. Note that the alignment step in which the first installation surface is moved along the first installation surface may be referred to as a first alignment step.

[0094] Here, the distance (more specifically, the distance in the y-axis direction) between the light-emitting end face 205 or the light-emitting region 201 of the semiconductor laser element 200 and the busbar 115 in the semiconductor laser device 1 shown in Fig. 7 is defined as y1. Similarly, the distance (more specifically, the distance in the y-axis direction) between the light-emitting end face 205 or the light-emitting region 201 of the semiconductor laser element 200 and the busbar 115 in the semiconductor laser device 1 shown in Fig. 8 is defined as y2.

[0095] When the lens unit 100 is moved in the x-axis direction along the first installation surface (first side surface 231), the generatrix 115 of the cylindrical lens 110 is inclined with respect to the zx plane, and therefore the distance between the semiconductor laser element 200 and the generatrix 115 changes. As shown in FIGS. 7 and 8 , when the lens unit 100 moves in the x-axis direction, the distance between the semiconductor laser element 200 and the generatrix 115 changes from distance y1 to distance y2. In other words, movement of the lens unit 100 in the x-axis direction can be converted into movement of the cylindrical lens 110 in the y-axis direction. Changing the distance between the semiconductor laser element 200 and the generatrix 115 can change the coupling efficiency between the laser light L1 and the core 550a at the end face of the optical fiber 550. For example, by optimizing the distance between the semiconductor laser element 200 and the generatrix 115 in optical design, the coupling efficiency between the laser light L1 and the core 550a at the end face of the optical fiber 550 can be further increased.

[0096] Furthermore, when the lens unit 100 is moved, a device such as a collet comes into contact with the support member 120, thereby moving the lens unit 100. In other words, the collet does not come into direct contact with the cylindrical lens 110. Furthermore, within the position adjustment range in the alignment step, it is preferable to make the thickness of the support member 120 (more specifically, the thickness in the y-axis direction) larger than the distance by which the light-emitting end face 205 protrudes from the first side surface 231. This makes it possible to prevent the semiconductor laser element 200 from being damaged due to contact between the incident surface 110R of the cylindrical lens 110 and the light-emitting end face 205.

[0097] In the alignment step, the lens unit 100 can be moved as a whole. That is, the entire lens unit 100 can be moved while the positional relationship between the cylindrical lens 110 and the support member 120 is fixed.

[0098] In the alignment step, the position of the lens unit 100 is moved, that is, the position of the lens unit 100 is adjusted, so as to increase the coupling efficiency between the emitted laser light L1 and the core 550a.

[0099] Here, for example, in this alignment step, it is preferable to move the lens unit 100 while the semiconductor laser element 200 is emitting the laser light L1. The laser light L1 emitted from the semiconductor laser element 200 passes through the cylindrical lens 110, the SAC 600, the reflecting mirror 700, and the condenser lens 800, and is then condensed into the core 550a of the optical fiber 550.

[0100] At this time, the position of the lens unit 100 is adjusted while observing the light intensity of the laser light L1 emitted from the optical fiber 550. Specifically, the lens unit 100 is slightly moved in the x-axis direction. At this time, the position of the lens unit 100 is adjusted so that the light intensity of the laser light L1 emitted from the optical fiber 550 is maximized, thereby performing so-called active alignment.

[0101] In the alignment step, the lens unit 100 may be moved in the z-axis direction along the first installation surface (first side surface 231). This allows the cylindrical lens 110 to be adjusted in the fast axis direction as well. This moves and adjusts the position of the generatrix 115 relative to the position of the light-emitting region 201 in the z-axis direction, thereby further increasing the coupling efficiency between the emitted laser light L1 and the core 550a.

[0102] Furthermore, a fixing step is performed in which the lens unit 100 moved in the alignment step is fixed to the first installation surface (first side surface 231).

[0103] First, one first bonding member 161 is positioned so as to contact the first parallel surface 121 and the second side surface 232, and the other first bonding member 161 is positioned so as to contact the first parallel surface 121 and the third side surface 233. In FIG. 8 , two positions where the two first bonding members 161 are positioned are indicated by white arrows. For example, an ultraviolet-curable adhesive is applied to each of these two positions. Then, ultraviolet light is irradiated to harden the two first bonding members 161 (the ultraviolet-curable adhesive), and the lens unit 100 is fixed to the first mounting surface (the first side surface 231). At this time, the first bonding member 161 undergoes volumetric shrinkage due to hardening shrinkage. However, since the first mounting surface and the first mounting surface are in contact with each other, displacement of the lens unit 100 from the predetermined position of the laser unit 20 can be prevented during the alignment step. By performing the fixing step, the semiconductor laser device 1 is manufactured, as shown in FIG. 9 . When low-melting-point glass is used as the first bonding member 161, a similar fixing step can be performed by applying molten low-melting-point glass to a similar position and lowering the temperature.

[0104] In this manner, the lens unit 100 (more specifically, the support member 120) and the submount 230 are joined at the first installation surface (first parallel surface 121) and the first installation surface (first side surface 231). Note that in the fixing step, the multiple SAC lenses 600 are also fixed.

[0105] As described above, the method for manufacturing the semiconductor laser device 1 according to the present embodiment includes a preparation step, a placement step, an alignment step, and a fixing step. The semiconductor laser devices 2 to 6 are also manufactured in the same manner, thereby manufacturing the light source module 10.

[0106] [Effect of angle α] As described above, in the present embodiment, in plan view, the generatrix 115 of the cylindrical lens 110 is inclined with respect to the first installation surface (first side surface 231). Furthermore, in plan view, the angle formed between the generatrix 115 of the cylindrical lens 110 and the first installation surface (first side surface 231) is angle α, and as an example, angle |α| is less than 45°, and more specifically, satisfies the following formula (1).

[0107] 0<|α|<22.5° Formula (1)

[0108] The influence of this angle α on alignment will be explained below.

[0109] 10 is a plan view of the semiconductor laser device 1 after the alignment step according to this embodiment has been performed. Here, an example will be described in which the alignment step has caused the lens unit 100 to move in the x-axis direction (more specifically, toward the negative x-axis side) by a change amount Δx. As explained in FIGS. 7 and 8 , the alignment step causes a change in the distance between the semiconductor laser element 200 and the generatrix 115 (more specifically, the distance in the y-axis direction). In FIG. 10 , this changed distance is the change amount Δy.

[0110] In this case, the absolute value of the change amount Δx and the absolute value of the change amount Δy satisfy the following formula (2).

[0111] |Δy|=|Δx|×tan(|α|) Formula (2)

[0112] When the angle |α| is less than 45°, |Δy| / |Δx| is less than 1. That is, in the position adjustment of the lens unit 100 in the alignment step, the absolute value of the change amount Δy is always smaller than the absolute value of the change amount Δx. Therefore, when the position of the lens unit 100 in the x-axis direction is adjusted using manufacturing equipment, the position in the x-axis direction can be adjusted with an accuracy equal to the manufacturing equipment accuracy, and the position in the y-axis direction can be adjusted with an accuracy higher than the manufacturing equipment accuracy. For example, when the angle α is 6°, the position in the x-axis direction can be adjusted with an accuracy equal to the manufacturing equipment accuracy, and the position of the lens unit 100 in the y-axis direction can be adjusted with an accuracy 10 times the manufacturing equipment accuracy. That is, a semiconductor laser device 1 with high position adjustment accuracy of the cylindrical lens 110, which is a collimator lens, is realized.

[0113] 11A is a graph showing an example of the relationship between the relative efficiency η and the deviation of the cylindrical lens 110 from the design value when the light source module 10 shown in FIG. 5 is configured using the semiconductor laser device 1 according to this embodiment. FIG. 11B is a graph showing an example of the relationship between the angle α and the relative efficiency η according to this embodiment. These two graphs were calculated by simulation. Here, the relative efficiency η is the ratio of the coupling efficiency under each condition under which the simulation was performed to the maximum coupling efficiency (=coupling efficiency / maximum coupling efficiency). The maximum coupling efficiency is the coupling efficiency when the angle α is 0° and there is no positional deviation of the optical elements. Note that the optical elements include the cylindrical lenses 110 of each of the six semiconductor laser devices 1 to 6, multiple SAC lenses 600, multiple reflecting mirrors 700, a condenser lens 800, and an optical fiber 550.

[0114] In the simulation data of Figures 11A and 11B, the light source module 10 includes six semiconductor laser devices 1 to 6 as shown in Figure 5, the width in the slow axis direction of the light-emitting region 201 of the semiconductor laser element 200 is 50 μm, the wavelength of the laser light L1 is 450 nm, the effective focal length of the cylindrical lens 110 is 0.38 mm, the effective focal length of the SAC lens 600 is 13.5 mm, the effective focal length of the focusing lens 800 is 7.3 mm, the NA of the optical fiber 550 is 0.55, and the diameter of the core 550a is 50 μm.

[0115] In Figure 11A, the angle α is 0°, and the graph shows the change in relative efficiency η with respect to the amount of misalignment when the positions of the cylindrical lenses 110 are misaligned in the propagation direction of each of the laser beams L1 to L6, i.e., the y-axis direction. As Figure 11A shows, when there is no misalignment, the relative efficiency η is close to 100%. However, in reality, there are cases where the thickness of the support member 120 or the fixed position of the semiconductor laser element 200 is misaligned due to manufacturing variations. In this case, when the first mounting surface and the first mounting surface come into contact, the distance between the light-emitting region 201 and the busbar 115 deviates from the design value. This misalignment reduces the coupling efficiency. This decrease in coupling efficiency occurs rapidly with a misalignment of the order of microns. For example, the relative efficiency η is less than 70% in both cases where the distance between the light-emitting region 201 and the busbar 115 is 5 μm apart and 5 μm closer. Furthermore, since the angle α is 0°, even if the first installation surface is moved along the first installation surface, the distance between the light-emitting area 201 and the busbar 115 cannot be changed, and therefore the coupling efficiency cannot be increased.

[0116] On the other hand, in this embodiment, the angle α is given by equation (1). Therefore, the coupling efficiency can be increased by adjusting the distance between the light-emitting region 201 and the generatrix 115. On the other hand, in this embodiment, the cylindrical lens 110 is tilted with respect to the light-emitting end surface 205, which causes aberration and reduces the coupling efficiency. FIG. 11B shows a graph in which the relative efficiency η is calculated using the maximum coupling efficiency obtained by adjusting the positions of the lens unit 100 and the SAC lens 600 for each angle α. As shown in FIG. 11B, the reduction in coupling efficiency can be suppressed by reducing the angle α.

[0117] Here, in order to achieve a relative efficiency of 95% or more, the angle |α| must be less than 3°. Furthermore, in order to achieve a relative efficiency of 90% or more, the angle |α| must be less than 5°. Furthermore, in order to achieve a relative efficiency of 85% or more, the angle |α| must be less than 6°. Therefore, by selecting an optimal angle α in the semiconductor laser device 1 of this embodiment, it is possible to suppress a decrease in coupling efficiency and to adjust the distance between the light-emitting region 201 and the bus bar 115, thereby improving the coupling efficiency.

[0118] [Modification 1 of Embodiment 1] Modification 1 of Embodiment 1 will be described below. The following description will focus on differences from Embodiment 1, and descriptions of commonalities will be omitted or simplified.

[0119] 12, 13, 14, and 15 are schematic diagrams showing steps in a method for manufacturing the semiconductor laser device 1a according to the first modification of the present embodiment, and are also plan views showing the configuration of the semiconductor laser device 1a according to the first modification of the present embodiment.

[0120] The semiconductor laser device 1a of this modified example has the same configuration as the semiconductor laser device 1 of embodiment 1, except that it has a lens unit 100a instead of the lens unit 100, and a laser unit 20a instead of the laser unit 20.

[0121] The lens unit 100a includes a cylindrical lens 110 and a support member 120a.

[0122] The support member 120a has a support member main body 125 and a first metal film 130. The first metal film 130 is an example of the metal film included in the lens unit 100a. The support member main body 125 has the same configuration as the support member 120, that is, it has a first parallel surface 121 and a first inclined surface 122.

[0123] The first metal film 130 is a film provided on the first parallel surface 121 of the support member main body 125. The thickness of the first metal film 130 is 0.01 μm or more and 5 μm or less. The first metal film 130 is made of Ti, Pt, Au, Ag, Pd, or the like. Note that the first metal film 130 does not need to be formed on the entire first parallel surface 121, and may be formed on only a portion of the first parallel surface 121 by patterning.

[0124] The first metal film 130 has a first surface 131. The first surface 131 is a surface located on the positive side of the y-axis (the laser unit 20a side) of the first metal film 130. The first surface 131 is parallel to the first parallel plane 121 and is a surface parallel to the zx plane. In this modified example, the first surface 131 corresponds to the first installation surface of the support member 120a. That is, in this modified example, the metal film (first metal film 130) of the lens unit 100a has the first installation surface.

[0125] The laser unit 20a includes a semiconductor laser element 200 and a submount 230a.

[0126] The submount 230a has a submount body 235, a second metal film 240, and a third metal film 250. The submount body 235 has the same configuration as the submount 230, and has a top surface 234, a first side surface 231, a second side surface 232, and a third side surface 233.

[0127] The second metal film 240 is a film provided on the second side surface 232 of the submount main body 235. The thickness of the second metal film 240 is 0.01 μm or more and 5 μm or less. The second metal film 240 is made of Ti, Pt, Au, Ag, Pd, or the like. The second metal film 240 is formed by, for example, vapor deposition or plating. Note that the second metal film 240 does not need to be formed on the entire second side surface 232, and may be formed on only a portion of the second side surface 232 by patterning.

[0128] The second metal film 240 has a second surface 241. The second surface 241 is the surface of the second metal film 240 located on the positive side of the x-axis.

[0129] The third metal film 250 is a film provided on the third side surface 233 of the submount body 235. The thickness of the third metal film 250 is 0.01 μm or more and 5 μm or less. The third metal film 250 is made of Ti, Pt, Au, Ag, Pd, or the like. The third metal film 250 is formed by, for example, vapor deposition or plating. Note that the third metal film 250 does not need to be formed on the entire third side surface 233, and may be formed on only a portion of the third side surface 233 by patterning.

[0130] The third metal film 250 has a third surface 251. The third surface 251 is a surface of the third metal film 250 located on the negative side of the x-axis.

[0131] As described above, the submount 230a has a top surface 234 on which the semiconductor laser element 200 is mounted, a first mounting surface perpendicular to the top surface 234, and two parallel side surfaces perpendicular to the top surface 234, each having a metal film formed thereon. The first mounting surface perpendicular to the top surface 234 corresponds to the first side surface 231. The two side surfaces correspond to the second side surface 232 and the third side surface 233. That is, the second side surface 232 and the third side surface 233 are side surfaces perpendicular to the top surface 234. A second metal film 240 is formed as a metal film on the second side surface 232, and a third metal film 250 is formed as a metal film on the third side surface 233. The second side surface 232 and the third side surface 233 are parallel to each other.

[0132] Also, similar to the first embodiment, the length of first surface 131 in the x-axis direction (slow-axis direction) is longer than the length of first side surface 231 in the x-axis direction.

[0133] Next, a manufacturing method of the semiconductor laser device 1a according to this modification will be described. The manufacturing method according to this modification includes a preparation step, a placement step, an alignment step, and a fixing step, as in the manufacturing method according to the first embodiment.

[0134] First, a preparation step is performed in which the lens portion 100a and the laser unit 20a are manufactured and prepared.

[0135] In the preparation step, first, the laser unit 20a is manufactured by placing the semiconductor laser element 200 above the upper surface 234 of the submount body 235 on which the second metal film 240 and the third metal film 250 are provided. Then, the laser unit 20a is placed on and fixed to, for example, the base 502.

[0136] Next, the cylindrical lens 110 is bonded to the support member main body 125 on which the first metal film 130 is provided, thereby manufacturing the lens portion 100a.

[0137] 12, a placement step is performed. In the placement step, the lens unit 100a is placed at a predetermined position on the laser unit 20a. More specifically, the lens unit 100a is placed on the first side surface 231 of the submount 230a, which is the first mounting surface.

[0138] 12 illustrates the placement step, with the white arrow indicating the direction in which the lens unit 100a is placed on the laser unit 20a. In this modification, the generatrix 115 and the first inclined surface 122 are parallel to each other and inclined with respect to the zx plane, and the first parallel surface 121, the first installation surface (first surface 131), and the first installation surface (first side surface 231) are parallel to the zx plane. Therefore, the lens unit 100a is placed so that the generatrix 115 is inclined with respect to the first installation surface (first side surface 231) by being placed so that the first installation surface (first surface 131) is in direct contact with the first installation surface (first side surface 231).

[0139] Next, as shown in FIGS. 13 and 14 , an alignment step is performed. FIG. 13 shows the semiconductor laser device 1a before the alignment step, and FIG. 14 shows the semiconductor laser device 1a after the alignment step. The alignment step is a process of moving the lens unit 100a in a direction parallel to the first mounting surface (first side surface 231). Here, since the first mounting surface (first side surface 231) is parallel to the zx plane, the lens unit 100a can be moved, for example, in the x-axis direction. The lens unit 100a can be moved along the first mounting surface (first side surface 231), and here, the first mounting surface (first surface 131) of the lens unit 100a moves relative to the first mounting surface (first side surface 231). In FIG. 13 , the movement direction of the lens unit 100a is indicated by an arrow.

[0140] As described in the first embodiment, in the alignment step, the movement of the lens portion 100a in the x-axis direction can be converted into the movement of the cylindrical lens 110 in the y-axis direction. As a result, the distance between the semiconductor laser element 200 and the generatrix 115 changes, and the coupling efficiency between the laser light L1 and the core 550a at the end face of the optical fiber 550 can be changed.

[0141] Additionally, a fixation step is performed.

[0142] In this modification, each of the two first joint members 161 is made of an inorganic adhesive member made of an inorganic material such as a solder material.

[0143] One first bonding member 161 is disposed in contact with the first surface 131 and the second surface 241, and the other first bonding member 161 is disposed in contact with the first surface 131 and the third surface 251. In FIG. 14 , the two positions where the two first bonding members 161 are disposed are indicated by white arrows. A high-temperature, fluid solder material is applied to each of these two positions. Specifically, a laser reflow technique may be used in which solder balls are melted and ejected with laser light. One of the molten solders contacts the first metal film 130 and the second metal film 240, and the other contacts and bonds the first metal film 130 and the third metal film 250. Furthermore, the temperature of the solder material decreases, solidifying the two first bonding members 161, and fixing the lens unit 100 a to the first mounting surface (first side surface 231). At this time, the first bonding member 161 undergoes volumetric contraction due to a temperature drop, but since the first installation surface and the first target installation surface are in contact in the alignment step, it is possible to prevent the lens portion 100a from shifting from the predetermined position of the laser unit 20a. By performing the fixing step in this manner, the semiconductor laser device 1a shown in FIG. 15 is manufactured.

[0144] In this modification, the two first bonding members 161 do not directly contact the support member main body 125 and the submount main body 235. One of the two first bonding members 161 contacts the first metal film 130 and the second metal film 240. The other of the two first bonding members 161 contacts the first metal film 130 and the third metal film 250. That is, the first metal film 130, the second metal film 240, and the third metal film 250 function as base layers for the two first bonding members 161. By providing the first metal film 130, the second metal film 240, and the third metal film 250, the laser unit 20a (more specifically, the submount 230a) and the lens unit 100a (more specifically, the support member 120a) can be more firmly fixed. The first metal film 130, the second metal film 240, and the third metal film 250 may be formed only in the area where the first bonding member 161 contacts and in the vicinity thereof.

[0145] When the lens portion 100a is fixed by heating and melting the first bonding member 161, the support member 120a may be made of a material with low thermal conductivity in order to locally concentrate heat on the first bonding member 161.

[0146] Furthermore, by providing the first metal film 130, the second metal film 240, and the third metal film 250, when two first bonding members 161 made of inorganic adhesive members are used for fixation, it is possible to suppress misalignment of the fixed position due to volumetric shrinkage of the two first bonding members 161.

[0147] Another example of Modification 1 of Embodiment 1 will now be described. The following will focus on differences from Modification 1 of Embodiment 1, and explanation of commonalities will be omitted or simplified.

[0148] 16A and 16B are schematic diagrams showing steps in a method for manufacturing a semiconductor laser device 1aa according to another example of Modification 1 of the present embodiment, and are also plan views showing the configuration of the semiconductor laser device 1aa according to another example of Modification 1 of the present embodiment.

[0149] The semiconductor laser device 1aa according to another example of this modified example has the same configuration as the semiconductor laser device 1a according to modified example 1 of embodiment 1, except that it has a lens portion 100aa instead of the lens portion 100a, and a laser unit 20aa instead of the laser unit 20a.

[0150] The laser unit 20aa includes a semiconductor laser element 200 and a submount 230aa.

[0151] The submount 230aa has a submount body 235 and a sixth metal film 260. The submount body 235 has the same configuration as the submount 230, and has a top surface 234, a first side surface 231, a second side surface 232, and a third side surface 233.

[0152] The sixth metal film 260 is a film provided on the first side surface 231 of the submount body 235. The thickness of the sixth metal film 260 is 0.01 μm or more and 5 μm or less. The sixth metal film 260 is made of Ti, Pt, Au, Ag, Pd, or the like. The sixth metal film 260 is formed by, for example, vapor deposition or plating. Note that the sixth metal film 260 does not need to be formed on the entire first side surface 231, and may be formed on only a portion of the first side surface 231 by patterning.

[0153] The sixth metal film 260 has a sixth surface 261. The sixth surface 261 is a surface located on the negative side of the y-axis of the sixth metal film 260, and is parallel to the first side surface 231. In another example of this modified example, the sixth surface 261 corresponds to the first installation surface.

[0154] As described above, the submount 230aa has an upper surface 234 on which the semiconductor laser device 200 is mounted, and a metal film (sixth metal film 260) having a first mounting surface. In another example of this modification, the submount body 235 has the upper surface 234. The sixth surface 261, which is the first mounting surface, is a surface orthogonal to the upper surface 234, and more specifically, is a surface parallel to the zx plane.

[0155] The lens unit 100aa includes a cylindrical lens 110 and a support member 120aa.

[0156] The support member 120aa has a support member main body 125aa, a fourth metal film 126, and a fifth metal film 127. The fourth metal film 126 and the fifth metal film 127 are each an example of a metal film included in the lens unit 100aa.

[0157] The support member main body 125aa is a member that is bonded to the cylindrical lens 110 and supports the cylindrical lens 110. More specifically, the support member main body 125aa is bonded to the incident surface 110R of the cylindrical lens 110. The support member main body 125aa is also a member that is bonded to the submount 230aa.

[0158] The support member main body 125aa is an elongated member extending in the x-axis direction, and more specifically, has a trapezoidal shape in a plan view. The support member main body 125aa has a first parallel surface 121aa (an example of a predetermined surface) parallel to the sixth surface 261 and a first inclined surface 122aa inclined with respect to the sixth surface 261.

[0159] The first inclined surface 122aa is a plane inclined in the x-axis direction from the zx plane, in other words, a plane inclined in a direction rotated around the z axis from the sixth surface 261 (zx plane). In another example of this modification, the first parallel surface 121aa is a plane on the positive side of the y axis, and the first inclined surface 122aa is a plane on the negative side of the y axis.

[0160] The first parallel surface 121aa is a surface parallel to the zx plane. In another example of this modification, the first parallel surface 121aa of the support member main body 125aa corresponds to the first installation surface. The first parallel surface 121aa, which is the first installation surface, is joined and fixed to the sixth surface 261, which is the first installation surface. In another example of this modification, the first installation surface (sixth surface 261) and the first installation surface (first parallel surface 121aa) are in direct contact with each other.

[0161] The first inclined surface 122aa is bonded to a flat surface that is the incident surface 110R of the cylindrical lens 110. The flat surface that is the incident surface 110R of the cylindrical lens 110 and the generatrix 115 are parallel to the first inclined surface 122aa.

[0162] As described above, the first installation surface (first parallel surface 121aa) and the first installation surface (sixth surface 261) are surfaces parallel to the zx plane.

[0163] The generatrix 115, the plane that is the incident surface 110R of the cylindrical lens 110, and the first inclined surface 122aa are parallel to each other and inclined with respect to the sixth surface 261 (zx plane), and in another example of this modification, are inclined in a direction rotated around the z axis from the sixth surface 261 (zx plane). In other words, in a plan view of the active layer 200a, the generatrix 115 of the cylindrical lens 110 is inclined with respect to the first installation surface (sixth surface 261).

[0164] Furthermore, the lens unit 100aa has two lens unit side surfaces, a first lens unit side surface 1251 and a second lens unit side surface 1252. In another example of this modified example, the support member main body 125aa has the first lens unit side surface 1251 and the second lens unit side surface 1252.

[0165] The first lens unit side surface 1251 and the second lens unit side surface 1252 are each surfaces connected to the first installation surface (first parallel surface 121aa). The first lens unit side surface 1251 and the second lens unit side surface 1252 are located at both ends of the lens unit 100aa in the slow axis direction (x-axis direction). Here, the first lens unit side surface 1251 is located at one end of the lens unit 100aa in the slow axis direction (x-axis direction), which is on the positive side of the x-axis, and the second lens unit side surface 1252 is located at the other end of the lens unit 100aa in the slow axis direction (x-axis direction), which is on the negative side of the x-axis.

[0166] As described above, the planar shape of the support member main body 125aa is trapezoidal, and therefore, in planar view, the first lens unit side surface 1251 and the second lens unit side surface 1252 correspond to the upper and lower bases of the trapezoidal shape.

[0167] In another example of this modified example, first lens unit side surface 1251 and second lens unit side surface 1252 are parallel to each other and to the yz plane.

[0168] Fourth metal film 126 is a film provided on first lens unit side surface 1251. Fourth metal film 126 has a thickness of 0.01 μm or more and 5 μm or less. Fourth metal film 126 is made of Ti, Pt, Au, Ag, Pd, or the like. Fourth metal film 126 is formed by, for example, vapor deposition or plating. Note that fourth metal film 126 does not need to be formed on the entire first lens unit side surface 1251, and may be formed only on a portion of first lens unit side surface 1251 by patterning.

[0169] The fourth metal film 126 has a fourth surface 1261. The fourth surface 1261 is a surface located on the positive side of the x-axis of the fourth metal film 126, and is parallel to the first lens portion side surface 1251.

[0170] Fifth metal film 127 is a film provided on second lens unit side surface 1252. Fifth metal film 127 has a thickness of 0.01 μm or more and 5 μm or less. Fifth metal film 127 is made of Ti, Pt, Au, Ag, Pd, or the like. Fifth metal film 127 is formed by, for example, vapor deposition or plating. Note that fifth metal film 127 does not need to be formed on the entire second lens unit side surface 1252, and may be formed on only a portion of second lens unit side surface 1252 by patterning.

[0171] The fifth metal film 127 has a fifth surface 1271. The fifth surface 1271 is a surface located on the negative side of the x-axis of the fifth metal film 127, and is parallel to the second lens unit side surface 1252.

[0172] 16A and 16B , the length of the first parallel surface 121aa in the x-axis direction (slow-axis direction) is different from the length of the sixth surface 261. More specifically, the length of the first parallel surface 121aa in the x-axis direction (slow-axis direction) is shorter than the length of the sixth surface 261 in the x-axis direction.

[0173] 16B, the submount 230aa and the support member main body 125aa are joined by two first joining members 161. Fig. 16B shows the semiconductor laser device 1aa after the fixing step has been performed.

[0174] In other examples of this modification, the fixing step is also performed as described in, for example, Fig. 14 of Modification 1 of Embodiment 1. Here, one first joint member 161 is arranged to contact sixth surface 261 and fourth surface 1261, and another first joint member 161 is arranged to contact sixth surface 261 and fifth surface 1271.

[0175] As described above, the semiconductor laser device 1 aa further includes two first joining members 161 .

[0176] In this other example of the present modification, the two first bonding members 161 do not directly contact the support member main body 125aa and the submount main body 235. The fourth metal film 126, the fifth metal film 127, and the sixth metal film 260 function as base layers for the two first bonding members 161. By providing the fourth metal film 126, the fifth metal film 127, and the sixth metal film 260, the laser unit 20aa (more specifically, the submount 230aa) and the lens unit 100aa (more specifically, the support member 120aa) can be more firmly fixed.

[0177] Furthermore, by providing the fourth metal film 126, the fifth metal film 127, and the sixth metal film 260, when two first bonding members 161 made of inorganic adhesive members are used for fixation, it is possible to suppress misalignment of the fixed position due to volumetric shrinkage of the two first bonding members 161.

[0178] In another example of this modification, the generatrix 115 is parallel to the first inclined surface 122aa and inclined with respect to the zx plane. The sixth surface 261 is a surface parallel to the zx plane. Therefore, in a planar view, the generatrix 115 is inclined with respect to the first installation surface (sixth surface 261). Therefore, when the position of the lens unit 100aa in the x-axis direction is adjusted by manufacturing equipment, the position in the x-axis direction can be adjusted with an accuracy equal to the manufacturing equipment accuracy, and the position in the y-axis direction can be adjusted with an accuracy higher than the manufacturing equipment accuracy. That is, in this other example of this modification, as in the first embodiment, a semiconductor laser device 1aa is realized in which the position adjustment accuracy of the cylindrical lens 110, which is a collimator lens, is high.

[0179] [Modification 2 of Embodiment 1] The following describes Modification 2 of Embodiment 1. The following mainly describes differences from Embodiment 1, and omits or simplifies explanation of commonalities.

[0180] [Configuration] FIG. 16C is a perspective view of a lens unit 100b according to Modification 2 of the present embodiment.

[0181] The semiconductor laser device according to this modification differs from the semiconductor laser device 1 according to the first embodiment in that it includes a lens portion 100 b instead of the lens portion 100 .

[0182] The lens unit 100b according to this modification includes a cylindrical lens 110b, but does not include a support member. The cylindrical lens 110b includes a cylindrical lens body 112 and a slope portion 116.

[0183] The cylindrical lens body 112 has the same configuration as the cylindrical lens 110. The cylindrical lens body 112 has a plane that is an incident surface onto which the laser light L1 is incident. This plane is inclined with respect to the zx plane, and in this modification, the plane is inclined in a direction rotated from the zx plane around the z axis.

[0184] The slope portion 116 is a region that protrudes in the positive direction of the y-axis from a plane that is the incident surface of the cylindrical lens body 112. The slope portion 116 has a sixth side surface 116b. The sixth side surface 116b is a plane that is located on the positive side of the y-axis of the slope portion 116. The sixth side surface 116b is a surface that is parallel to the zx plane.

[0185] In addition, the cylindrical lens 110b can also be said to have a shape in which the cylindrical lens 110 and the support member 120 are integrated.

[0186] In this modification, the first side surface 231 corresponds to the first installation surface, and the sixth side surface 116b corresponds to the first installation surface. In the alignment step, the lens unit 100b can be moved along the first installation surface (first side surface 231).

[0187] Furthermore, the lens unit 100b has two lens unit side surfaces, a first lens unit side surface 1117 and a second lens unit side surface 1118.

[0188] The first lens unit side surface 1117 and the second lens unit side surface 1118 are each surfaces connected to the first installation surface (sixth side surface 116b). The first lens unit side surface 1117 and the second lens unit side surface 1118 are located at both ends of the lens unit 100b in the slow axis direction (x-axis direction). Here, the first lens unit side surface 1117 is located at one end of the lens unit 100b in the slow axis direction (x-axis direction), which is the positive side of the x-axis, and the second lens unit side surface 1118 is located at the other end of the lens unit 100b in the slow axis direction (x-axis direction), which is the negative side of the x-axis. The second lens unit side surface 1118 is a surface formed by combining both the negative x-axis side surface of the cylindrical lens body 112 and the negative x-axis side surface of the slope portion 116.

[0189] In another example of this modification, the first lens unit side surface 1251 and the second lens unit side surface 1252 are parallel to each other.

[0190] In this modification, the generatrix 115 is parallel to the plane that is the incident surface onto which the laser light L1 is incident and is inclined with respect to the zx plane. Furthermore, the first side surface 231 is a surface that is parallel to the zx plane. Therefore, in a planar view, the generatrix 115 of the cylindrical lens 110b is inclined with respect to the first installation surface (first side surface 231). Therefore, when the position of the lens unit 100b in the x-axis direction is adjusted by manufacturing equipment, the position in the x-axis direction can be adjusted with an accuracy equal to the manufacturing equipment accuracy, and the position in the y-axis direction can be adjusted with an accuracy higher than the manufacturing equipment accuracy. That is, in this modification, as in the first embodiment, a semiconductor laser device in which the position of the cylindrical lens 110b, which is a collimator lens, is highly accurately adjusted is realized.

[0191] Furthermore, lens unit 100b may have, for example, the following configuration. For example, in lens unit 100b, a metal film may be formed on each of first lens unit side surface 1117 and second lens unit side surface 1118. In this configuration, as in the other examples of Modification 1 of Embodiment 1, a sixth metal film 260 may be provided on first side surface 231, and a sixth surface 261 of sixth metal film 260 corresponds to the first mounting surface. Furthermore, the length of the first mounting surface (sixth side surface 116b) in the x-axis direction (slow-axis direction) may be shorter than the length of the first mounting surface (sixth surface 261) in the x-axis direction.

[0192] One first bonding member 161 is disposed so as to contact sixth surface 261 and the metal film formed on first lens unit side surface 1117, and the other first bonding member 161 is disposed so as to contact sixth surface 261 and the metal film formed on second lens unit side surface 1118. In this manner, by providing two metal films and sixth metal film 260, it is possible to suppress misalignment of the two first bonding members 161 due to volumetric shrinkage when two first bonding members 161 made of inorganic adhesive are used for fixation.

[0193] [Modification 3 of Embodiment 1] Modification 3 of Embodiment 1 will be described below. The following description will focus on differences from Modification 2 of Embodiment 1, and description of commonalities will be omitted or simplified.

[0194] FIG. 17 is a perspective view of a lens unit 100c according to a third modification of the present embodiment.

[0195] The semiconductor laser device according to this modification differs from the semiconductor laser device according to the second modification of the first embodiment in that it includes a lens portion 100c instead of the lens portion 100b.

[0196] The lens unit 100c according to this modification has a cylindrical lens 110c and does not have a support member.

[0197] Cylindrical lens 110c has the same configuration as cylindrical lens 110, except that the incident surface onto which laser light L1 is incident is light incident plane 117. While incident surface 110R of cylindrical lens 110 according to the first embodiment is inclined with respect to the zx plane, light incident plane 117 according to this modification is a plane parallel to the zx plane.

[0198] In this modification, the first side surface 231 corresponds to the first installation surface, and the light incident plane 117 corresponds to the first installation surface. In the alignment step, the lens unit 100c can be moved along the first installation surface (first side surface 231).

[0199] Furthermore, as in the second modification of the first embodiment, in this modification, the generatrix 115 is inclined with respect to the zx plane, and the first side surface 231 is a surface parallel to the zx plane. Therefore, in a plan view, the generatrix 115 of the cylindrical lens 110c is inclined with respect to the first installation surface (first side surface 231). Therefore, when the position of the lens unit 100c in the x-axis direction is adjusted by manufacturing equipment, the position in the x-axis direction can be adjusted with an accuracy equal to the precision of the manufacturing equipment, and the position in the y-axis direction can be adjusted with an accuracy higher than the precision of the manufacturing equipment. In other words, as in the first embodiment, this modification also realizes a semiconductor laser device in which the position of the cylindrical lens 110c, which is a collimator lens, is highly precisely adjusted.

[0200] [Effects, etc.] The semiconductor laser device 1 according to the first embodiment includes a semiconductor laser element 200 that emits laser light L1 from a light emitting end face 205, and a lens unit 100 that has a cylindrical lens 110 and a first mounting surface. The semiconductor laser element 200 has an active layer 200a. The laser light L1 is incident on the cylindrical lens 110, and the cylindrical lens 110 reduces the divergence angle of the laser light L1 in the fast axis direction. The first mounting surface is fixed to a first mounting surface. In a plan view of the active layer 200a, a generatrix 115 of the cylindrical lens 110 is inclined with respect to the first mounting surface.

[0201] 10, the absolute value of the change amount Δy is always smaller than the absolute value of the change amount Δx. Therefore, when the position of the lens unit 100 in the x-axis direction is adjusted by the manufacturing equipment, the position in the x-axis direction can be adjusted with an accuracy equal to the manufacturing equipment accuracy, and the position in the y-axis direction can be adjusted with an accuracy higher than the manufacturing equipment accuracy. In other words, the semiconductor laser device 1 is realized with high position adjustment accuracy of the cylindrical lens 110, which is a collimator lens.

[0202] In the semiconductor laser device 1 according to the first embodiment, the angle α formed between the generatrix 115 of the cylindrical lens 110 and the first mounting surface in a plan view of the active layer 200a satisfies the following formula.

[0203] 0<|α|<22.5°

[0204] As a result, the absolute value of the change amount Δy is always sufficiently smaller than the absolute value of the change amount Δx. Therefore, when the position of the lens unit 100 in the x-axis direction is adjusted by the manufacturing equipment, the position in the x-axis direction can be adjusted with an accuracy equal to the accuracy of the manufacturing equipment, and the position in the y-axis direction can be adjusted with an accuracy higher than the accuracy of the manufacturing equipment. In other words, the semiconductor laser device 1 is realized with high accuracy in adjusting the position of the cylindrical lens 110, which is a collimator lens.

[0205] In the semiconductor laser device 1 according to the first embodiment, the first mounting surface and the first mounting surface are in direct contact with each other.

[0206] As a result, since there is no bonding material between the first mounting surface and the first mounting surface, problems such as a change in the distance between the first mounting surface and the first mounting surface due to hardening and shrinkage of the bonding material (so-called bonding misalignment) are unlikely to occur. In other words, the semiconductor laser device 1 can be realized with high accuracy in adjusting the position of the cylindrical lens 110, which is a collimator lens.

[0207] The semiconductor laser device 1 according to the first embodiment includes a submount 230 on which the semiconductor laser element 200 is mounted. The submount 230 has an upper surface 234 on which the semiconductor laser element 200 is mounted, and a first mounting surface (first side surface 231) perpendicular to the upper surface 234.

[0208] This makes it possible to realize the semiconductor laser device 1 including the submount 230 having the first mounting surface.

[0209] In the semiconductor laser device 1 according to the first embodiment, the light emitting end face 205 and the first mounting surface are parallel to each other.

[0210] This makes it possible to realize a semiconductor laser device 1 in which the light emitting end face 205 and the first mounting surface are parallel to each other.

[0211] In the semiconductor laser device 1 according to the first embodiment, the lens unit 100 includes a cylindrical lens 110 and a support member 120 including a predetermined surface (first parallel surface 121). The first installation surface is the predetermined surface.

[0212] This allows the predetermined surface (first parallel surface 121) that is the first installation surface included in the support member 120 to move relative to the first installation surface.

[0213] In the semiconductor laser device 1 according to the first embodiment, the cylindrical lens 110 has an incident surface 110R onto which the laser light L1 is incident. The generatrix 115 and the incident surface 110R are parallel to each other.

[0214] This allows the laser light L1 to be incident on the incident surface 110R of the cylindrical lens 110.

[0215] In the semiconductor laser device 1 according to the first embodiment, the support member 120 is bonded to the incident surface 110R.

[0216] This allows the support member 120 to be bonded to the cylindrical lens 110 via the incident surface 110R.

[0217] In the semiconductor laser device 1 according to the first embodiment, the lens unit 100 has a support member 120 including a first installation surface. The length of the first installation surface in the slow axis direction is different from the length of the first installation surface in the slow axis direction.

[0218] For example, the length of the first installation surface in the slow axis direction is longer than the length of the first installation surface. As a result, as shown in FIG. 3 , the first parallel surface 121 has two regions that are not covered by the first side surface 231. Of these two regions, the region on the positive side of the x-axis and the second side surface 232 are joined by one first joining member 161, and the region on the negative side of the x-axis and the third side surface 233 are joined by another first joining member 161. In other words, because no joining member is present between the first installation surface and the first installation surface, problems such as changes in the distance between the first installation surface and the first installation surface due to cure shrinkage of the joining member do not occur.

[0219] The manufacturing method according to the first embodiment is a method for manufacturing a semiconductor laser device 1, and the semiconductor laser device 1 includes a semiconductor laser element 200 that emits laser light L1 from a light-emitting end face 205, and a lens unit 100 that has a cylindrical lens 110 and a first mounting surface. The semiconductor laser element 200 has an active layer 200a. The cylindrical lens 110 reduces the divergence angle of the laser light L1 in the fast axis direction. The first mounting surface is fixed to a first mounting surface. The manufacturing method includes an arrangement step of arranging the lens unit 100 on the first mounting surface so that, in a planar view of the active layer 200a, the generatrix 115 of the cylindrical lens 110 is inclined relative to the first mounting surface; an alignment step of making the laser light L1 emitted from the semiconductor laser element 200 incident on the cylindrical lens 110 and moving the arranged lens unit 100 in a direction parallel to the first mounting surface; and a fixing step of fixing the moved lens unit 100 to the first mounting surface.

[0220] 10, in the position adjustment of the lens unit 100 in the alignment step, the absolute value of the change amount Δy is always smaller than the absolute value of the change amount Δx. Therefore, when the position of the lens unit 100 in the x-axis direction is adjusted by manufacturing equipment, the position in the x-axis direction can be adjusted with an accuracy equal to the accuracy of the manufacturing equipment, and the position in the y-axis direction can be adjusted with an accuracy higher than the accuracy of the manufacturing equipment. In other words, a semiconductor laser device 1 is realized in which the position adjustment accuracy of the cylindrical lens 110, which is a collimator lens, is high.

[0221] The semiconductor laser device 1 according to the first embodiment can also be said to have the following configuration. That is, the semiconductor laser device 1 according to the first embodiment includes a semiconductor laser element 200 that emits laser light L1 from a light emitting end face 205, and a lens unit 100 that has a cylindrical lens 110 and a first mounting surface. The semiconductor laser element 200 has an active layer 200a. The cylindrical lens 110 receives the laser light L1 and reduces the divergence angle of the laser light L1 in the fast axis direction. The first mounting surface is fixed to a first mounting surface. In a plan view of the active layer 200a, a generatrix 115 of the cylindrical lens 110 is inclined with respect to the first mounting surface.

[0222] 10, the absolute value of the change amount Δy is always smaller than the absolute value of the change amount Δx. Therefore, when the position of the lens unit 100 in the x-axis direction is adjusted by the manufacturing equipment, the position in the x-axis direction can be adjusted with an accuracy equal to the manufacturing equipment accuracy, and the position in the y-axis direction can be adjusted with an accuracy higher than the manufacturing equipment accuracy. In other words, the semiconductor laser device 1 is realized with high position adjustment accuracy of the cylindrical lens 110, which is a collimator lens.

[0223] The semiconductor laser device 1a according to the first modification of the first embodiment includes a submount 230a on which the semiconductor laser element 200 is mounted. The length of the first mounting surface (first surface 131) in the slow-axis direction (x-axis direction) is longer than the length of the first mounting surface (first side surface 231) in the slow-axis direction (x-axis direction). The submount 230a has a top surface 234 on which the semiconductor laser element 200 is mounted and a first mounting surface (first side surface 231) orthogonal to the top surface 234. The submount 230a has two parallel side surfaces (second side surface 232 and third side surface 233) orthogonal to the top surface 234 and on which metal films (second metal film 240 and third metal film 250) are formed, respectively. The lens unit 100a includes a metal film (first metal film 130) having the first mounting surface (first surface 131).

[0224] This makes it possible to realize a semiconductor laser device 1a that can suppress misalignment of the fixed position due to volumetric shrinkage of the two first bonding members 161 when fixing using two first bonding members 161 made of inorganic adhesive material.

[0225] A semiconductor laser device 1aa according to another example of the first modification of the first embodiment includes a submount 230aa on which a semiconductor laser element 200 is mounted. The length of the first mounting surface (first parallel surface 121aa) in the slow-axis direction (x-axis direction) is shorter than the length of the first mounting surface (sixth surface 261) in the slow-axis direction (x-axis direction). The submount 230aa has an upper surface 234 on which the semiconductor laser element 200 is mounted and a metal film (sixth metal film 260) having the first mounting surface (sixth surface 261). The first mounting surface (sixth surface 261) is perpendicular to the upper surface 234. The lens unit 100aa is connected to the first mounting surface (first parallel surface 121aa) and has two lens unit side surfaces (first lens unit side surface 1251 and second lens unit side surface 1252) on which metal films (fourth metal film 126 and fifth metal film 127) are respectively formed. One of the two lens portion side surfaces is located at one end of the slow axis direction (x-axis direction) in a planar view of the active layer 200a, and the other of the two lens portion side surfaces is located at the other end of the slow axis direction (x-axis direction) in a planar view of the active layer 200a.

[0226] This makes it possible to realize a semiconductor laser device 1aa that can suppress misalignment of the fixed position due to volumetric shrinkage of the two first bonding members 161 when fixing using two first bonding members 161 made of inorganic adhesive material.

[0227] (Embodiment 2) The following describes embodiment 2. The following mainly describes the differences from embodiment 1, and the description of commonalities will be omitted or simplified.

[0228] [Configuration] Fig. 18 is a perspective view showing the configuration of a semiconductor laser device 1d according to this embodiment. The semiconductor laser device 1d according to this embodiment has the same configuration as the semiconductor laser device 1 according to the first embodiment, except that it includes a lens portion 100d instead of the lens portion 100. Fig. 18 also shows a bonding member 210 that bonds the semiconductor laser element 200 and the submount 230. The laser unit 20d according to this embodiment has the semiconductor laser element 200, the submount 230, and the bonding member 210.

[0229] The bonding member 210 is a solder material such as AuSn, SnAgCu, etc. A metal film made of, for example, Ti, Cu, Pt, or Au is formed on the upper surface 234 of the submount 230, and the bonding member 210 is formed on the upper surface 234. The semiconductor laser element 200 is fixed to the upper surface 234 of the submount 230 by the bonding member 210, thereby forming the laser unit 20d.

[0230] The lens unit 100d is composed of a cylindrical lens 110 and a support member 120d.

[0231] The support member 120d is a member that is bonded to the cylindrical lens 110 and supports the cylindrical lens 110. The support member 120d is, for example, a parallel plate, a plate-like member, and has an upper surface 120U to which the cylindrical lens 110 is bonded. More specifically, the lower surface 110B of the cylindrical lens 110 is bonded to the upper surface 120U of the support member 120d. The support member 120d is also a member that is bonded to the submount 230. The lower surface 110B is a surface that is perpendicular to the incident surface 110R.

[0232] [Manufacturing Method] A manufacturing method for the semiconductor laser device 1d according to this embodiment will be described with reference to FIGS. 19A to 19C.

[0233] Fig. 19A is a perspective view showing the configuration of a laser unit 20d according to this embodiment, Fig. 19B is a perspective view showing the configuration of a lens portion 100d according to this embodiment, and Fig. 19C is a plan view showing the configuration of a semiconductor laser device 1d according to this embodiment.

[0234] 19A , the semiconductor laser element 200 is placed at a predetermined position on the bonding member 210 of the submount 230, and the bonding member 210 is melted and hardened by heating and cooling to fix the semiconductor laser element 200 on the submount 230, thereby manufacturing the laser unit 20d. At this time, similarly to the first embodiment, the light-emitting end surface 205 of the semiconductor laser element 200 protrudes forward beyond the first side surface 231 of the submount 230.

[0235] 19B, the cylindrical lens 110 is connected to the support member 120d. At this time, the lower surface 110B of the cylindrical lens 110 is bonded to the upper surface 120U of the support member 120d, and the lens unit 100d is manufactured. At this time, the generatrix 115 of the cylindrical lens 110 is fixed at an angle with respect to the first parallel surface 121 of the support member 120d. The generatrix 115 is fixed parallel to an axis rotated from the x-axis in the negative y-axis direction by an angle α2 around the z-axis. At this time, the angle α2 satisfies 0<|α2|<22.5°.

[0236] 19C , the lens unit 100d is fixed to a predetermined position on the laser unit 20d. Specifically, the first parallel surface 121 of the lens unit 100d is aligned and bonded to the first side surface 231, which is the first mounting surface of the laser unit 20d. At this time, the upper surface 120U of the support member 120d is positioned below the upper surface 234 of the submount 230. Therefore, the light-emitting end surface 205 of the semiconductor laser element 200, which protrudes forward from the first side surface 231 of the submount 230, does not come into contact with the support member 120d or the cylindrical lens 110. Note that prior to this step, the laser unit 20d may be fixed to a base such as a base 502, for example, as shown in the first embodiment of FIG. 5 .

[0237] 20A to 20C are diagrams specifically illustrating a method for fixing a lens portion 100d to a predetermined position of a laser unit 20d. FIG. 20A is a plan view of a semiconductor laser device 1d according to this embodiment. FIG. 20B is a cross-sectional view showing a cut surface of the semiconductor laser device 1d taken along line XXB-XXB in FIG. 20A. FIG. 20C is a plan view of the semiconductor laser device 1d according to this embodiment. Note that in FIG. 20B, hatching indicating a cross section is omitted, and hatching indicating a joining member 210 is shown.

[0238] In Figures 20A and 20B, the lens unit 100d is adjusted to be positioned at a predetermined position on the laser unit 20d. The first side surface 231, which is the first installation surface of the laser unit 20d, comes into contact with the first parallel surface 121 of the support member 120d, which is the first installation surface of the lens unit 100d. In the alignment step, the lens unit 100d is moved along the first installation surface (first side surface 231). At this time, in Figure 20A, the lens unit 100d is moved in the x-axis direction. This allows the distance y3 between the light emitting end surface 205 and the generatrix 115 to be adjusted. Also, in Figure 20B, the lens unit 100d is moved in the z-axis direction. This allows the distance Δz in the z-axis direction between the light emitting end surface 205 and the generatrix 115 to be adjusted.

[0239] After the position of the lens portion 100d is adjusted as described above, the lens portion 100d is fixed to the laser unit 20d by the first joining member 161. This construction method is the same as that in the first embodiment, for example.

[0240] In this embodiment, the first side surface 231 corresponds to the first installation surface, and the first parallel surface 121 of the support member 120d corresponds to the first installation surface. In the alignment step, the lens unit 100d can be moved along the first installation surface (first side surface 231). Furthermore, in the fixing step shown in FIG. 20C, the lens unit 100d can be fixed to the laser unit 20d. The fixing step according to this embodiment can be performed using a method similar to that of the first embodiment and its modifications 1 to 3.

[0241] Also, as in the first embodiment, in this embodiment, the generatrix 115 is inclined with respect to the zx plane, and the first side surface 231 is a surface parallel to the zx plane. Therefore, in a plan view, the generatrix 115 of the cylindrical lens 110 is inclined with respect to the first installation surface (first side surface 231). Therefore, when the position of the lens unit 100d in the x-axis direction is adjusted by manufacturing equipment, the position in the x-axis direction can be adjusted with an accuracy equal to the accuracy of the manufacturing equipment, and the position in the y-axis direction can be adjusted with an accuracy higher than the accuracy of the manufacturing equipment. In other words, as in the first embodiment, this embodiment also realizes a semiconductor laser device 1d in which the position adjustment accuracy of the cylindrical lens 110, which is a collimator lens, is high.

[0242] [Effects, etc.] In the semiconductor laser device 1d according to the second embodiment, the cylindrical lens 110 has a lower surface 110B that is perpendicular to the incident surface 110R. The support member 120d is bonded to the lower surface 110B.

[0243] This allows the support member 120d to be bonded to the cylindrical lens 110 via the lower surface 110B.

[0244] In the semiconductor laser device 1d according to the second embodiment, the outer shape of the support member 120d is larger than the outer shape of the cylindrical lens 110 in a plan view of the active layer 200a.

[0245] This allows the lens portion 100d to be easily moved and positioned by adsorbing the upper surface 120U of the support member 120d with a collet or the like.

[0246] (Embodiment 3) The following describes embodiment 3. The following mainly describes the differences from embodiment 1, and the description of commonalities will be omitted or simplified.

[0247] [Configuration] Fig. 21 is a perspective view showing the configuration of a semiconductor laser device 1e according to this embodiment, Fig. 22 is a plan view showing the configuration of a semiconductor laser device 1e according to this embodiment, and Fig. 23 is a front view showing the configuration of a semiconductor laser device 1e according to this embodiment.

[0248] The semiconductor laser device 1e according to the present embodiment has the same configuration as the semiconductor laser device 1 according to the first embodiment, except that it includes a lens portion 100e instead of the lens portion 100 and further includes a fixing member 300. For simplicity, the two first bonding members 161 are not shown in FIG.

[0249] The fixing member 300 is a member that is bonded to and fixed to the submount 230. The fixing member 300 is located between the lens unit 100e and the submount 230, and bonds the lens unit 100e to the submount 230. The fixing member 300 is also a member that has a first installation surface.

[0250] First, the fixing member 300 will be described.

[0251] The fixing member 300 is an elongated member extending in the x-axis direction. The fixing member 300 has a second parallel surface 301 parallel to the first side surface 231 of the submount 230, a second inclined surface 302 inclined with respect to the first side surface 231, a fourth side surface 304 parallel to the y-z plane, and a fifth side surface 305 parallel to the y-z plane. The second inclined surface 302 is a plane inclined in the x-axis direction from the z-x plane. In this embodiment, the second inclined surface 302 is a plane inclined in a direction rotated around the z-axis from the first side surface 231 (z-x plane). The second parallel surface 301 is a plane on the positive side of the y-axis, and the second inclined surface 302 is a plane on the negative side of the y-axis. The fourth side surface 304 is a plane on the negative side of the x-axis, and the fifth side surface 305 is a plane on the positive side of the x-axis.

[0252] The second parallel surface 301 is a surface parallel to the zx plane. The second parallel surface 301 is joined to and fixed to the first side surface 231.

[0253] The second inclined surface 302 is a surface that is bonded to the lens unit 100e. In this embodiment, the second inclined surface 302 corresponds to the first mounting surface. The second inclined surface 302 is a plane perpendicular to the upper surface 234. In other words, the first mounting surface is a plane perpendicular to the upper surface 234 on which the semiconductor laser element 200 is disposed.

[0254] Furthermore, the light-emitting end face 205 of the semiconductor laser device 200 is parallel to the first side face 231 of the submount 230. Therefore, the first mounting surface is inclined with respect to the light-emitting end face 205.

[0255] The fourth side surface 304 is a surface parallel to the third side surface 233. The fourth side surface 304 and the third side surface 233 are flush with each other.

[0256] The fifth side surface 305 is a surface parallel to the second side surface 232. The fifth side surface 305 and the second side surface 232 are flush with each other.

[0257] The fixing member 300 is formed by processing a substrate of a semiconductor material such as glass or silicon, for example, by partial etching, polishing, or cutting. The fixing member 300 may also be formed of a metal such as Fe or an Fe alloy, and may also be formed of Al. ２ O ３ , ZrO ２ , Si ３ N ４ Alternatively, it may be made of ceramic such as AlN.

[0258] Next, the lens unit 100e will be described.

[0259] The lens unit 100e has a cylindrical lens 110 and a support member 120. The lens unit 100e has the same configuration as the lens unit 100, mainly except that the orientation of the support member 120 is different.

[0260] The support member 120 has a first parallel surface 121e and a first inclined surface 122e. In the present embodiment, the first parallel surface 121e is a plane on the negative side of the y-axis, and the first inclined surface 122e is a plane on the positive side of the y-axis. The support member 120 according to the present embodiment has the same configuration as the support member 120 according to the first embodiment. That is, the first parallel surface 121e and the first inclined surface 122e according to the present embodiment correspond to the first parallel surface 121 and the first inclined surface 122 according to the first embodiment, respectively.

[0261] The first parallel surface 121e is bonded to a plane that is the incident surface 110R of the cylindrical lens 110. The plane that is the incident surface 110R of the cylindrical lens 110 and the generatrix 115 are parallel to the first parallel surface 121e and the zx plane. In plan view, the generatrix 115 is parallel to the slow axis (x-axis direction).

[0262] Here, the angle between the first parallel surface 121 e and the first inclined surface 122 e is the same as the angle between the second parallel surface 301 and the second inclined surface 302 of the fixing member 300. Therefore, the incident surface 110R is parallel to the light emitting end surface 205 and the first side surface 231.

[0263] In this embodiment, the first inclined surface 122e corresponds to the first installation surface. The first inclined surface 122e, which is the first installation surface, is joined and fixed to the second inclined surface 302, which is the first installation surface. The first inclined surface 122e and the second inclined surface 302 are parallel to each other.

[0264] Here, we focus on the generating line 115 in this embodiment, the plane which is the incident surface 110R of the cylindrical lens 110, the first installation surface (first inclined surface 122e), the first parallel surface 121e, and the first installation surface (second inclined surface 302).

[0265] As described above, the plane that is the incident surface 110R of the cylindrical lens 110, the generatrix 115, and the first parallel surface 121e are parallel to the zx plane. That is, the incident surface 110R is parallel to the light-emitting end surface 205 of the semiconductor laser device 200.

[0266] The first installation surface (first inclined surface 122e) and the first installation surface (second inclined surface 302) are parallel to each other and inclined with respect to the zx plane. As a result, in a plan view, the generatrix 115 of the cylindrical lens 110 is inclined with respect to the first installation surface (second inclined surface 302).

[0267] In a plan view, the angle formed between the generatrix 115 of the cylindrical lens 110 and the first installation surface (second inclined surface 302) is an angle α, and as an example, the angle |α| is less than 45°.

[0268] [Manufacturing Method] A manufacturing method for the semiconductor laser device 1e will now be described.

[0269] 24, 25, 26, and 27 are schematic diagrams showing steps in a method for manufacturing a semiconductor laser device 1e according to this embodiment. The manufacturing method according to this embodiment includes a preparation step, a placement step, an alignment step, and a fixing step, as in the manufacturing method according to the first embodiment.

[0270] First, a preparation step is performed in which the lens portion 100e and the laser unit 20 are manufactured and prepared. Also in the preparation step, the fixing member 300 is fixed to the laser unit 20.

[0271] In the preparation step, first, the semiconductor laser element 200 is placed above the upper surface 234 (the plane on the positive side of the z-axis) of the submount 230, thereby manufacturing the laser unit 20. Furthermore, the second parallel surface 301 of the fixing member 300 is joined to the first side surface 231 of the submount 230. Then, the laser unit 20 is placed on and fixed to, for example, a base 502.

[0272] Next, the cylindrical lens 110 is bonded to the support member 120 to manufacture the lens unit 100e. More specifically, the first parallel surface 121e of the support member 120 is bonded to the plane that is the incident surface 110R of the cylindrical lens 110.

[0273] 24, a placement step is performed. In the placement step, the lens unit 100e is placed at a predetermined position on the fixing member 300. More specifically, the lens unit 100e is placed on the second inclined surface 302 of the fixing member 300, which is the first installation surface.

[0274] 24 illustrates the placement step, with the white arrow indicating the direction in which the lens unit 100e is placed on the fixing member 300. In this embodiment, the generating line 115 and the first parallel surface 121e are parallel to each other and are parallel to the zx plane, and the first installation surface (first inclined surface 122e) and the first installation surface (second inclined surface 302) are inclined with respect to the zx plane. Therefore, by placing the first installation surface (first inclined surface 122e) so that it is in direct contact with the first installation surface (second inclined surface 302), the lens unit 100e is placed so that the generating line 115 is inclined with respect to the first installation surface (second inclined surface 302).

[0275] Next, as shown in FIGS. 25 and 26 , an alignment step is performed. FIG. 25 shows the semiconductor laser device 1e before the alignment step, and FIG. 26 shows the semiconductor laser device 1e after the alignment step. The alignment step is a process of moving the lens unit 100e in a direction parallel to the first installation surface (second inclined surface 302). Here, the first installation surface (second inclined surface 302) is inclined with respect to the zx plane. Therefore, the lens unit 100e can be moved in the x-axis positive and y-axis positive directions, or the x-axis negative and y-axis negative directions, which are directions parallel to the first installation surface (second inclined surface 302). The lens unit 100e can be moved along the first installation surface (second inclined surface 302), where the first installation surface (first inclined surface 122e) of the lens unit 100e moves relative to the first installation surface (second inclined surface 302). In FIG. 25, the direction of movement of the lens portion 100e is indicated by an arrow.

[0276] As described in the first embodiment, in the alignment step, movement of the lens unit 100e in a direction parallel to the first mounting surface (second inclined surface 302) can be converted into movement of the cylindrical lens 110 in the y-axis direction. That is, the distance y4 between the light-emitting region 201 and the light-emitting end surface 205 and the generatrix 115 shown in FIG. 25 can be changed to the distance y5 between the light-emitting region 201 and the light-emitting end surface 205 and the generatrix 115 shown in FIG. 26. As a result, the change in the distance between the semiconductor laser element 200 and the generatrix 115 can change the coupling efficiency between the laser light L1 and the core 550a at the end face of the optical fiber 550. In this case, in the semiconductor laser device 1e of this embodiment, the generatrix 115 is inclined with respect to the first mounting surface, but the light-emitting end surface 205 is parallel to the incident surface 110R of the cylindrical lens 110 and the generatrix 115. Therefore, aberrations are unlikely to occur. 11A, and the relative efficiency η with respect to the amount of deviation becomes the value shown in Fig. 11A, and the relative efficiency can approach 100% by moving the distance between the semiconductor laser element 200 and the generatrix 115 to an optimal position. Note that in the alignment step according to this embodiment, the lens portion 100e may be adjusted in the z-axis direction as in the first embodiment.

[0277] Additionally, a fixation step is performed.

[0278] One first bonding member 161 is disposed so as to contact the first inclined surface 122e, the second side surface 232, and the fifth side surface 305, and the other first bonding member 161 is disposed so as to contact the first inclined surface 122e and the fourth side surface 304. In Fig. 26, the two positions where the two first bonding members 161 are disposed are indicated by hollow arrows. By performing the fixing step in this manner, the semiconductor laser device 1e shown in Fig. 27 is manufactured.

[0279] [Effect of angle α] As described above, in the present embodiment, in plan view, the generatrix 115 of the cylindrical lens 110 is inclined with respect to the first installation surface (second inclined surface 302). Furthermore, in plan view, the angle formed between the generatrix 115 of the cylindrical lens 110 and the first installation surface (second inclined surface 302) is angle α, and as an example, angle |α| is less than 45°, and more specifically, satisfies the following formula (3).

[0280] 0<|α|<22.5° Formula (3)

[0281] As described in the first embodiment, the alignment step changes the distance (more specifically, the distance in the y-axis direction) between the semiconductor laser element 200 and the generating line 115. In the present embodiment as well, when the alignment step moves the lens unit 100e in the x-axis direction by a change amount Δx, the distance in the y-axis direction between the semiconductor laser element 200 and the generating line 115 moves by a change amount Δy.

[0282] In this case, the absolute value of the change amount Δx and the absolute value of the change amount Δy satisfy the following formula (4).

[0283] |Δy|=|Δx|×tan(|α|) Formula (4)

[0284] Therefore, as in the first embodiment, when the position of the lens unit 100e in the x-axis direction is adjusted by the manufacturing equipment, the position in the x-axis direction can be adjusted with an accuracy equal to the manufacturing equipment accuracy, and the position in the y-axis direction can be adjusted with an accuracy higher than the manufacturing equipment accuracy. In other words, a semiconductor laser device 1e is realized in which the position of the cylindrical lens 110, which is a collimator lens, is adjusted with high accuracy. Furthermore, in this embodiment, the light-emitting end surface 205 of the semiconductor laser element 200 is parallel to the incident surface 110R and the generatrix 115 of the cylindrical lens 110. Therefore, the reduction in coupling efficiency due to aberration, as described in the first embodiment, is unlikely to occur. Therefore, in this embodiment, the reduction in coupling efficiency due to aberration is suppressed, and the distance between the light-emitting end surface 205 and the light-emitting region 201 and the generatrix 115 can be easily changed.

[0285] The following describes modifications 1 to 5 of embodiment 3. The following description focuses on differences from embodiment 3 and the like, and omits or simplifies the description of commonalities.

[0286] Fig. 28 is a plan view of a laser unit 20f according to Modification 1 of the present embodiment, Fig. 29 is a plan view of a laser unit 20g according to Modification 2 of the present embodiment, and Fig. 30 is a plan view of a laser unit 20h according to Modification 3 of the present embodiment.

[0287] The semiconductor laser device 1e according to the third embodiment includes the fixing member 300, but the semiconductor laser devices 1f to 1h according to the first to third modifications of the third embodiment do not include the fixing member 300. The semiconductor laser devices 1f to 1h according to the first to third modifications of the third embodiment differ from the semiconductor laser device 1e according to the third embodiment in that each of them includes laser units 20f to 20h instead of the laser unit 20.

[0288] 28 to 30, the lens portion 100e provided in each of the semiconductor laser devices 1f to 1h is omitted from the illustration.

[0289] [First Modification of Third Embodiment] A laser unit 20f included in a semiconductor laser device 1f according to this modification differs from the laser unit 20 in that a submount 230f is provided instead of the submount 230. A first side surface 231f of the submount 230f according to this modification is inclined with respect to the zx plane. The first side surface 231f is a plane inclined in a direction rotated around the z axis from the zx plane.

[0290] The submount 230f can also be said to have a shape in which the submount 230 according to the third embodiment and the fixing member 300 are integrated together. In this modification, the first side surface 231f corresponds to the first mounting surface of the submount 230f. In the alignment step, the lens unit 100e can be moved along the first mounting surface (first side surface 231f).

[0291] In this modification, the generatrix 115 of the cylindrical lens 110 is also parallel to the zx plane. Therefore, in a plan view, the generatrix 115 is inclined with respect to the first installation surface (first side surface 231f). Therefore, when the position of the lens unit 100e in the x-axis direction is adjusted by the manufacturing equipment, the position in the x-axis direction can be adjusted with an accuracy equal to the manufacturing equipment accuracy, and the position in the y-axis direction can be adjusted with an accuracy higher than the manufacturing equipment accuracy. In other words, in this modification, as in the third embodiment, a semiconductor laser device 1f is realized in which the position adjustment accuracy of the cylindrical lens 110, which is a collimator lens, is high.

[0292] Furthermore, as described above, the semiconductor laser device 1f does not include the fixing member 300. This allows the distance between the cylindrical lens 110 and the semiconductor laser element 200 and the focal length of the cylindrical lens 110 to be shortened, thereby making it possible to reduce the size of the semiconductor laser device 1f.

[0293] [Second Modification of Third Embodiment] A laser unit 20g included in a semiconductor laser device 1g according to this modification differs from the laser unit 20 in that it has a submount 230g instead of the submount 230. A first side surface 231g of the submount 230g according to this modification is inclined with respect to the zx plane. The first side surface 231g is a plane that is inclined in a direction rotated from the zx plane around the z axis. The submount 230g has a top surface 234, a second side surface 232g, a third side surface 233g, and a rear side surface 239g.

[0294] Furthermore, the shape of the submount 230 in plan view is rectangular, but the shape of the submount 230g in plan view is a parallelogram.

[0295] In this modification, the first side surface 231g corresponds to a first mounting surface of the submount 230g. In the alignment step, the lens unit 100e can be moved along the first mounting surface (first side surface 231g).

[0296] In other words, the submount 230g of this modified example has two side surfaces that are perpendicular to the top surface 234 and parallel to the resonator direction (y-axis direction), and two other side surfaces that are perpendicular to the top surface 234, inclined with respect to the slow-axis direction (x-axis direction) in a planar view, and parallel to each other.

[0297] These two side surfaces correspond to the second side surface 232g and the third side surface 233g. That is, each of the second side surface 232g and the third side surface 233g is a side surface that is perpendicular to the top surface 234 and is parallel to the cavity direction (y-axis direction). More specifically, the second side surface 232g and the third side surface 233g are surfaces that are parallel to the yz plane. As a result, the distance between the semiconductor laser element 200 and the second side surface 232g and the distance between the semiconductor laser element 200 and the third side surface 233g are constant regardless of the position in the cavity direction (y-axis direction), thereby improving the uniformity of heat dissipation of the semiconductor laser element 200.

[0298] 29 shows distances D1 and D2 as examples of the distance between the semiconductor laser element 200 and the second side surface 232g, and distances D3 and D4 as examples of the distance between the semiconductor laser element 200 and the third side surface 233g. Distance D1 is located on the negative side of the y-axis relative to distance D2. Distance D3 is located on the negative side of the y-axis relative to distance D4.

[0299] Since the distance between the semiconductor laser element 200 and the second side surface 232g is constant regardless of the position in the resonator direction (y-axis direction), the distance D1 is equal to the distance D2. Similarly, since the distance between the semiconductor laser element 200 and the third side surface 233g is constant regardless of the position in the resonator direction (y-axis direction), the distance D3 is equal to the distance D4. This improves the uniformity of heat dissipation of the semiconductor laser element 200, as described above. Furthermore, the distance D1, the distance D2, the distance D3, and the distance D4 may be equal. This further improves the uniformity of heat dissipation of the semiconductor laser element 200.

[0300] The other two side surfaces correspond to the first side surface 231g and the rear side surface 239g. That is, the first side surface 231g and the rear side surface 239g are each side surfaces that are perpendicular to the top surface 234 and are inclined with respect to the slow axis direction (x-axis direction) in a plan view. The first side surface 231g and the rear side surface 239g are also side surfaces that are parallel to each other.

[0301] In this modified example, the first installation surface is one of the two other side surfaces, which is the first side surface 231g as described above.

[0302] In this modification, the generatrix 115 of the cylindrical lens 110 is also parallel to the zx plane. Therefore, in a plan view, the generatrix 115 is inclined with respect to the first installation surface (first side surface 231g). Therefore, when the position of the lens unit 100e in the x-axis direction is adjusted by manufacturing equipment, the position in the x-axis direction can be adjusted with an accuracy equal to the accuracy of the manufacturing equipment, and the position in the y-axis direction can be adjusted with an accuracy higher than the accuracy of the manufacturing equipment. In other words, in this modification, as in the third embodiment, a semiconductor laser device 1g is realized in which the position adjustment accuracy of the cylindrical lens 110, which is a collimator lens, is high.

[0303] [Third Modification of Third Embodiment] A laser unit 20h included in a semiconductor laser device 1h according to this modification differs from the laser unit 20 in that a submount 230h is provided instead of the submount 230. A first side surface 231h of the submount 230h according to this modification is inclined with respect to the zx plane. The first side surface 231h is a plane inclined in a direction rotated from the zx plane around the z axis.

[0304] The planar shape of the submount 230h is rectangular, just like the planar shape of the submount 230. However, as shown in Fig. 30 , in the laser unit 20h, the positional relationship between the submount 230h and the semiconductor laser element 200 is different from that in the laser unit 20. More specifically, the submount 230h is disposed rotated around the z-axis with respect to the submount 230.

[0305] In this modification, the first side surface 231 h corresponds to a first mounting surface of the submount 230 h. In the alignment step, the lens unit 100 e can be moved along the first mounting surface (first side surface 231 h).

[0306] In this modification, the generatrix 115 of the cylindrical lens 110 is also parallel to the zx plane. Therefore, in a plan view, the generatrix 115 is inclined with respect to the first installation surface (first side surface 231h). Therefore, when the position of the lens unit 100e in the x-axis direction is adjusted by manufacturing equipment, the position in the x-axis direction can be adjusted with an accuracy equal to the accuracy of the manufacturing equipment, and the position in the y-axis direction can be adjusted with an accuracy higher than the accuracy of the manufacturing equipment. In other words, in this modification, as in the third embodiment, a semiconductor laser device 1h is realized in which the position of the cylindrical lens 110, which is a collimator lens, is highly accurately adjusted.

[0307] [Fourth Modification of Third Embodiment] Fig. 31 is a plan view of a submount 230h2 according to a fourth modification of the present embodiment. Fig. 32 is a diagram illustrating a method for manufacturing the submount 230h2 according to the fourth modification of the present embodiment.

[0308] While the laser unit 20h according to the third modification of the third embodiment includes a submount 230h, the laser unit according to the fourth modification of the third embodiment differs from the laser unit 20h according to the third modification of the third embodiment in that it includes a submount 230h2 instead of the submount 230h. The semiconductor laser device according to the fourth modification of the third embodiment differs from the semiconductor laser device 1e according to the third embodiment in that it includes a laser unit according to this modification instead of the laser unit 20.

[0309] The first side surface 231h of the submount 230h2 according to this modification is inclined with respect to the zx plane. The first side surface 231h is a plane inclined in a direction rotated from the zx plane around the z axis. The first side surface 231h is inclined at an angle α from the axis corresponding to the generatrix 115.

[0310] The submount 230h2 has a rectangular shape in a plan view. A bonding member 210h2 is formed on the upper surface of the submount 230h2. The laser unit according to this modification differs from the laser unit 20 in the positional relationship between the submount 230h2 and the bonding member 210h2 bonded to the semiconductor laser element 200. More specifically, the side surface of the bonding member 210h2 is perpendicular to the axis corresponding to the generatrix 115 and is rotated around the z-axis with respect to the first side surface 231h.

[0311] 32 illustrates a method for manufacturing the submount 230h2. Bonding members 210h2 are formed on a substrate 1000 corresponding to a plurality of submounts 230h2, and the substrate 1000 is then cut at an angle relative to the longitudinal axis of the bonding members 210h2. More specifically, the substrate 1000 is cut at cutting positions 1001, 1002, 1003, 1004, and 1005 indicated by dashed lines, thereby manufacturing a plurality (12) of submounts 230h2.

[0312] Note that after cutting at some of the cutting positions 1001, 1002, 1003, 1004, and 1005 and before cutting at the other positions, a metal film may be formed on the side surfaces, such as the first side surface 231h, of the submount 230h2. For example, when the substrate 1000 is divided into two pieces by cutting at the cutting position 1001, a metal film is formed on the side surfaces of each of the two divided pieces, and then cutting is performed at the cutting positions 1002, 1003, 1004, and 1005. One of the divided pieces is a group of three submounts 230h2, and the other is a group of nine submounts 230h2. Therefore, a metal film can be formed on these three submounts 230h2 collectively, and a metal film can be formed on these nine submounts 230h2 collectively.

[0313] This allows the metal film to be formed more easily than when the substrate is cut into twelve submounts 230h2 and then a metal film is formed separately on each of the twelve submounts 230h2.

[0314] In this modification, the first side surface 231h corresponds to a first mounting surface of the submount 230h2. In the alignment step, the lens unit 100e can be moved along the first mounting surface (first side surface 231h).

[0315] In this modification, the generatrix 115 of the cylindrical lens 110 is also parallel to the zx plane. Therefore, in a plan view, the generatrix 115 is inclined with respect to the first installation surface (first side surface 231h). Therefore, when the position of the lens unit 100e in the x-axis direction is adjusted by manufacturing equipment, the position in the x-axis direction can be adjusted with an accuracy equal to the accuracy of the manufacturing equipment, and the position in the y-axis direction can be adjusted with an accuracy higher than the accuracy of the manufacturing equipment. In other words, in this modification, as in the third embodiment, a semiconductor laser device is realized in which the position adjustment accuracy of the cylindrical lens 110, which is a collimator lens, is high.

[0316] [Modification 5 of Embodiment 3] Modification 5 of Embodiment 3 will be described below. The following description will focus on differences from Modification 2 of Embodiment 3, and description of commonalities will be omitted or simplified.

[0317] Fig. 33 is a perspective view showing the configuration of a semiconductor laser device 1i according to Modification 5 of this embodiment. Fig. 34 is an exploded plan view showing the configuration of a semiconductor laser device 1i according to Modification 5 of this embodiment. Each of Figs. 35A to 35D is a schematic view showing a manufacturing process of the semiconductor laser device 1i according to Modification 5 of this embodiment.

[0318] The semiconductor laser device 1i according to this modification will be described, focusing on the differences from the semiconductor laser device 1g according to Modification 2 of Embodiment 3. The submount 230i of the semiconductor laser device 1i is a parallelogram, similar to the submount 230g according to Modification 2. Also, the lens unit 100i differs from the lens unit 100e according to Embodiment 3 in that it includes a support member 120i instead of the support member 120.

[0319] The laser unit 20 i includes a semiconductor laser element 200 , a submount 230 i , and a bonding member 210 .

[0320] The submount 230i includes a submount substrate 236i and a first spacer 237i. The submount 230i may also include a second spacer 238i as shown in FIG. 35C . In this case, the second spacer 238i and the first spacer 237i are made of the same material, and the submount 230i is configured such that the submount substrate 236i is sandwiched between the second spacer 238i and the first spacer 237i. The submount 230i does not necessarily need to include the second spacer 238i.

[0321] The submount substrate 236i is a plate-shaped substrate made of a high-heat dissipation material, such as a ceramic material such as aluminum nitride or silicon carbide. In this modification, the submount substrate 236i is made of an insulating material. The submount substrate 236i has a parallelogram shape in a plan view. The first mounting surface of the submount 230i is a first side surface 231i, which is a side surface of the submount substrate 236i. The first spacer 237i is made of a metal material with high thermal conductivity, such as copper. The submount substrate 236i has a thickness of, for example, approximately 0.1 mm to 1.0 mm, and the first spacer 237i has a thickness of, for example, approximately 0.01 mm to 0.5 mm (more specifically, the thickness in the z-axis direction). The first spacer 237i is patterned and formed on the upper surface of the submount substrate 236i. The first spacer 237i has an outer shape smaller than that of the submount substrate 236i in a plan view of the submount 230i. The first spacer 237i has a convex shape, and more specifically, a protruding portion protruding in the negative y-axis direction. That is, the first spacer 237i protrudes near the position where the light-emitting end face 205 of the semiconductor laser element 200 is located. That is, the side surfaces of the first spacer 237i at the position where the light-emitting end face 205 is located include outer side surfaces 231iR and 231iL and a central side surface 231iF, and the central side surface 231iF protrudes relative to the outer side surfaces 231iR and 231iL. The central side surface 231iF is a plane perpendicular to the second side surface 232 and the third side surface 233. The bonding member 210 is then formed on the first spacer 237i, including the protruding portion. The semiconductor laser element 200 is fixed to the upper part of the bonding member 210. At this time, the semiconductor laser element 200 is fixed to the submount 230i so that the light emitting end face 205 is parallel to the central side face 231iF. That is, the semiconductor laser element 200 is fixed to the submount 230i so that the optical waveguide 200r is parallel to the second side face 232 and the third side face 233. In addition, the light emitting end face 205 of the semiconductor laser element 200 is fixed so that it coincides with the central side face 231iF of the submount 230i or protrudes slightly from the central side face 231iF in the emission direction of the laser light L1.With this configuration, the light-emitting end face 205 is parallel to the central side face 231iF, so the amount of protrusion of the light-emitting end face 205 from the central side face 231iF can be adjusted with high precision. Therefore, even if the shape of the submount base 236i is a parallelogram, the distance between the light-emitting region 201 and the first side face 231i of the submount 230i can be adjusted with high precision near the joint between the semiconductor laser element 200 and the submount 230i.

[0322] Similar to the lens unit 100d of the second embodiment, the lens unit 100i is composed of a support member 120i and a cylindrical lens 110. An upper surface 120U of the support member 120i and a lower surface 110B of the cylindrical lens 110 are joined together so that the generatrix 115 is inclined relative to the first inclined surface 121i. In this case, the outer shape of the support member 120i is larger than the outer shape of the cylindrical lens 110 in a plan view.

[0323] 35A illustrates a method for manufacturing submounts 230i. A metal corresponding to the first spacers 237i is patterned and deposited on a substrate 1000i corresponding to the submount base materials 236i of the multiple submounts 230i by electrolytic plating or the like. Then, the bonding members 210 are formed, and the substrate 1000i is cut at an angle relative to the longitudinal axis of the bonding members 210. More specifically, the substrate 1000i is cut at cutting positions 1001i, 1002i, 1003i, and 1004i indicated by dashed lines, thereby manufacturing multiple submounts 230i.

[0324] [Manufacturing Method] First, although not shown, the semiconductor laser element 200 is fixed to the submount 230i. At this time, the semiconductor laser element 200 is fixed so that the light-emitting end face 205 of the semiconductor laser element 200 is aligned with the central side face 231iF of the first spacer 237i or protrudes from the central side face 231iF. Specifically, the semiconductor laser element 200 is fixed so that the light-emitting end face 205 protrudes from the central side face 231iF by, for example, 0 μm to 30 μm. Next, in FIG. 34 , the lens portion 100i is placed at a predetermined position on the laser unit 20i. Specifically, the first inclined surface 121i of the lens portion 100i is positioned and bonded to the first side face 231i, which is the first mounting surface of the laser unit 20i. At this time, the upper surface 120U of the support member 120i is placed below the upper surface 234 of the submount 230i. Therefore, the light-emitting end face 205 of the semiconductor laser element 200 does not come into contact with the support member 120i and the cylindrical lens 110. Furthermore, in this modification, the light-emitting end face 205 is fixed so as to be rearward of the first side surface 231i of the submount base 236i in the emission direction of the laser light L1. As a result, the light-emitting end face 205 of the semiconductor laser element 200 protrudes from the first spacer 237i of the submount 230i, but the first side surface 231i is located closer to the emission direction of the laser light L1 than the light-emitting end face 205. Therefore, it is possible to prevent the light-emitting end face 205 of the semiconductor laser element 200 from further coming into contact with the support member 120i and the cylindrical lens 110. In addition, since the outer shape of the support member 120i of the lens unit 100i is larger than the outer shape of the cylindrical lens 110 in a plan view, the lens unit 100i can be easily moved and positioned by adsorbing the upper surface 120U of the support member 120i with a collet or the like. Note that, prior to this step, the laser unit 20i may be fixed in advance to a base such as a base 502, for example, as shown in the first embodiment in FIG.

[0325] Figures 35B to 35D are diagrams specifically explaining a method for fixing the lens portion 100i to a predetermined position of the laser unit 20i. Figure 35B is a plan view of the semiconductor laser device 1i according to Modification 5 of this embodiment. Figure 35C is a cross-sectional view showing a cut surface of the semiconductor laser device 1i taken along line XXXVB-XXXVB in Figure 35B. Figure 35D is a plan view of the semiconductor laser device 1i according to Modification 5 of this embodiment. Note that in Figure 35C, hatching indicating a cross section is omitted, and hatching indicating a bonding member 210 is shown.

[0326] In Figures 35B and 35C, the lens unit 100i is adjusted to be positioned at a predetermined position on the laser unit 20i. The first side surface 231i, which is the first installation surface of the laser unit 20i, comes into contact with the first inclined surface 121i of the support member 120i, which is the first installation surface of the lens unit 100i. In the alignment step, the lens unit 100i is moved along the first installation surface (first side surface 231i). At this time, in Figure 35B, the lens unit 100i is moved in the x-axis direction. This allows the distance y6 between the light emitting end surface 205 and the generatrix 115 to be adjusted. Also, in Figure 35B, the lens unit 100i is moved in the z-axis direction. This allows the distance Δz in the z-axis direction between the light emitting end surface 205 and the generatrix 115 to be adjusted.

[0327] After the position of the lens portion 100i is adjusted as described above, the lens portion 100i is fixed to the laser unit 20i by the first joining member 161. This construction method is the same as that in the first embodiment, for example.

[0328] In this modification, the first side surface 231i corresponds to a first mounting surface of the submount 230i. In the alignment step, the lens unit 100i can be moved along the first mounting surface (first side surface 231i).

[0329] In this modification, the generatrix 115 of the cylindrical lens 110 is also parallel to the zx plane. Therefore, in a plan view, the generatrix 115 is inclined with respect to the first installation surface (first side surface 231i). Therefore, when the position of the lens unit 100i in the x-axis direction is adjusted by manufacturing equipment, the position in the x-axis direction can be adjusted with an accuracy equal to the accuracy of the manufacturing equipment, and the position in the y-axis direction can be adjusted with an accuracy higher than the accuracy of the manufacturing equipment. In other words, in this modification, as in the third embodiment, a semiconductor laser device 1i is realized in which the position adjustment accuracy of the cylindrical lens 110, which is a collimator lens, is high.

[0330] [Effects, etc.] The semiconductor laser device 1e according to the third embodiment includes a submount 230 on which the semiconductor laser element 200 is mounted, and a fixing member 300 bonded to the submount 230. The submount 230 has an upper surface 234 on which the semiconductor laser element 200 is mounted. The fixing member 300 has a first mounting surface (second inclined surface 302) that is perpendicular to the upper surface 234.

[0331] This makes it possible to realize a semiconductor laser device 1e including a fixing member 300 having a first mounting surface.

[0332] In the semiconductor laser device 1e according to the third embodiment, the light-emitting end face 205 and the generatrix 115 are parallel to each other.

[0333] This makes it difficult for the reduction in coupling efficiency due to aberration to occur, as described in embodiment 1. Therefore, in embodiment 3, it is possible to suppress the reduction in coupling efficiency due to aberration, and to easily change the distance between the light emitting end face 205 and the light emitting region 201 and the bus bar 115.

[0334] In this modification, the central side surface 231iF protrudes relative to the outer side surfaces 231iR and 231iL, but this is not limited to this. The central side surface 231iF is inclined relative to the first side surface 231i, and in the laser unit 20i, it is sufficient that it is parallel to the light-emitting end surface 205. Furthermore, in the semiconductor laser device 1i, it is sufficient that the central side surface 231iF is parallel to the incident surface 110R and the generatrix 115.

[0335] In the third embodiment and the fifth modification of the third embodiment, the range of the angle α is set to the range of the formula (3), but this is not limitative. For example, the angle α may satisfy the following formula:

[0336] 0<|α|<6°

[0337] This allows the positions of the lens portions 100e and 100i in the y-axis direction to be adjusted with higher precision, thereby realizing the semiconductor laser devices 1e and 1i in which the position of the cylindrical lens 110 can be adjusted with higher precision.

[0338] Furthermore, the angle α should satisfy the following formula:

[0339] 0<|α|<3°

[0340] This allows the positions of the lens portions 100e and 100i in the y-axis direction to be adjusted with even higher precision, thereby realizing the semiconductor laser devices 1e and 1i in which the position of the cylindrical lens 110 can be adjusted with even higher precision.

[0341] In the semiconductor laser device 1g according to the second modification of the third embodiment, the submount 230g has two side surfaces (a second side surface 232g and a third side surface 233g) that are orthogonal to the top surface 234 and parallel to the cavity direction (the y-axis direction). The submount 230g has two other side surfaces (a first side surface 231g and a rear side surface 239g) that are orthogonal to the top surface 234, inclined with respect to the slow-axis direction (the x-axis direction) in a plan view of the active layer 200a, and parallel to each other. The first mounting surface (the first side surface 231g) is one of the two other side surfaces.

[0342] As a result, the shape of the submount 230g in plan view is a parallelogram, and therefore, when the submount 230g is manufactured by a method similar to the manufacturing method described with reference to Fig. 32, the productivity of the submount 230g can be improved, and thus the semiconductor laser device 1g can be realized with high productivity.

[0343] This also makes the distance between the semiconductor laser element 200 and the second side surface 232g and the distance between the semiconductor laser element 200 and the third side surface 233g constant regardless of the position in the resonator direction (y-axis direction), thereby improving the uniformity of heat dissipation of the semiconductor laser element 200. For example, compared to a case where the distance between the semiconductor laser element 200 and the second side surface 232g and the distance between the semiconductor laser element 200 and the third side surface 233g each exhibits a different value depending on the position in the resonator direction (y-axis direction), the semiconductor laser device 1g can improve the uniformity of heat dissipation of the semiconductor laser element 200.

[0344] (Fourth Embodiment) The following describes a fourth embodiment, focusing on differences from the third embodiment, and omitting or simplifying the description of commonalities.

[0345] [Configuration] Fig. 36 is a perspective view showing the configuration of a semiconductor laser device 1j according to this embodiment. Fig. 37 is a plan view showing the configuration of a semiconductor laser device 1j according to this embodiment. Fig. 38 is a front view showing the configuration of a semiconductor laser device 1j according to this embodiment.

[0346] The semiconductor laser device 1j according to this embodiment has the same configuration as the semiconductor laser device 1e according to the third embodiment, except that it has a lens portion 100j instead of the lens portion 100e and that it has two second bonding members 162.

[0347] The lens unit 100j has a cylindrical lens 110, a support member 120j, a first installation surface, a second installation surface, and a second installation surface.

[0348] The support member 120j includes a first support member 121j, a second support member 122j, and a third support member 123j.

[0349] The first support member 121j and the second support member 122j are installed above the third support member 123j.

[0350] The first support member 121j is an elongated member extending in the x-axis direction and has an upper surface, a lower surface 121jB, a seventh side surface 1217, and an eighth side surface 1218. The upper surface of the first support member 121j is a plane that is bonded to the lower surface of the cylindrical lens 110 and is a plane parallel to the xy plane. The lower surface 121jB is a plane that is bonded to the second support member 122j. The seventh side surface 1217 is parallel to the zy plane and is a plane on the positive side of the x-axis. The eighth side surface 1218 is parallel to the zy plane and is a plane on the negative side of the x-axis.

[0351] The second support member 122j is an elongated member extending in the x-axis direction and has an upper surface 122jT and a lower surface. The upper surface 122jT is a flat surface that is joined to the lower surface 121jB of the first support member 121j, and the lower surface of the second support member 122j is a flat surface that is joined to the third support member 123j and the fixing member 300 and is parallel to the xy plane.

[0352] The lower surface 121jB and the upper surface 122jT are parallel to each other and are inclined with respect to the xy plane. The lower surface 121jB and the upper surface 122jT are inclined in the x-axis direction from the xy plane, and in this embodiment, are inclined in a direction rotated around the y-axis from the xy plane.

[0353] The second installation surface of the lens unit 100j according to this embodiment corresponds to the lower surface 121jB of the first support member 121j. The second installation surface (lower surface 121jB) is fixed to a second installation surface of the lens unit 100j. The second installation surface corresponds to the upper surface 122jT of the second support member 122j.

[0354] The third support member 123j has the same configuration as the support member 120 according to the third embodiment. That is, the third support member 123j has a first parallel surface 121e and a first inclined surface 122e. In this embodiment, the first parallel surface 121e is a plane on the negative side of the y-axis, and the first inclined surface 122e is a plane on the positive side of the y-axis. As in the third embodiment, the first inclined surface 122e of the third support member 123j corresponds to the first installation surface and is joined and fixed to the second inclined surface 302, which is the first installation surface. Furthermore, the upper surface of the third support member 123j and the upper surface of the fixing member 300 are flush with each other. The upper surfaces of the third support member 123j and the fixing member 300 are joined to the lower surface of the second support member 122j.

[0355] Next, the two second joint members 162 will be described.

[0356] The first support member 121j and the second support member 122j are joined by two second joining members 162. More specifically, one second joining member 162 joins the seventh side surface 1217 and the top surface 122jT, and the other second joining member 162 joins the eighth side surface 1218 and the top surface 122jT.

[0357] The upper surface 122jT has two regions that are not covered by the lower surface 121jB. Of these two regions, the region on the positive side of the x-axis and the seventh side surface 1217 are joined by one second joining member 162, and the region on the negative side of the x-axis and the eighth side surface 1218 are joined by another second joining member 162.

[0358] The second bonding member 162 is made of an inorganic adhesive material made of an inorganic material such as a solder material.

[0359] Here, attention will be paid to the generatrix 115, the lower surface of the cylindrical lens 110, the second installation surface (lower surface 121jB), and the second installation surface (upper surface 122jT) according to this embodiment.

[0360] As described above, the bottom surface 121jB and the top surface 122jT are parallel to each other and are inclined with respect to the xy plane. The generating line 115 and the bottom surface of the cylindrical lens 110 are parallel to the xy plane. In other words, when viewed from the emission direction d1 of the laser light L1 (i.e., when viewed from the front), the generating line 115 of the cylindrical lens 110 is inclined with respect to the second installation surface (top surface 122jT).

[0361] In a front view, the angle formed between the generatrix 115 of the cylindrical lens 110 and the second installation surface (upper surface 122jT) is defined as angle β. As an example, angle |β| is less than 45°.

[0362] Next, the influence of the angle β will be considered. Hereinafter, the alignment step in which the second installation surface (lower surface 121jB) is moved along the second installation surface (upper surface 122jT) may be referred to as the second alignment step. Here, an example will be considered in which, in the second alignment step, the cylindrical lens 110 and the first support member 121j are fixed, and the cylindrical lens 110 and the first support member 121j are moved together so that the lower surface 121jB moves along the upper surface 122jT.

[0363] As described above, the angle |β| is less than 45°, and more specifically, satisfies the following formula (5).

[0364] 0<|β|<22.5° Formula (5)

[0365] The influence of this angle β on alignment will be explained below.

[0366] 10 described above is an example in which the first alignment step moves the lens unit 100 in the x-axis direction by the amount of change Δx, thereby changing the distance in the y-axis direction between the semiconductor laser element 200 and the generating line 115, and this changed distance is the amount of change Δy. Similarly, in the second alignment step according to this embodiment, an example will be described in which the cylindrical lens 110 and the first support member 121j move together in the x-axis direction by the amount of change Δx. This movement changes the distance between the semiconductor laser element 200 and the generating line 115 (more specifically, the distance in the z-axis direction), and this changed distance is defined as the amount of change Δz1.

[0367] At this time, the absolute value of the change amount Δx and the absolute value of the change amount Δz1 satisfy the following formula (6).

[0368] |Δz1|=|Δx|×tan(|β|) Formula (6)

[0369] When the angle |β| is less than 45°, |Δz1| / |Δx| is less than 1. That is, in adjusting the positions of the cylindrical lens 110 and the first support member 121j, the absolute value of the change amount Δz1 is always smaller than the absolute value of the change amount Δx. Therefore, when the positions of the cylindrical lens 110 and the first support member 121j in the x-axis direction are adjusted by manufacturing equipment, the positions in the x-axis direction can be adjusted with an accuracy equal to the accuracy of the manufacturing equipment, and the positions in the z-axis direction can be adjusted with an accuracy higher than the accuracy of the manufacturing equipment.

[0370] As in the third embodiment, the following effects are expected.

[0371] As in the third embodiment, the generatrix 115 of the cylindrical lens 110 is parallel to the zx plane. Therefore, in a plan view, the generatrix 115 is inclined with respect to the first installation surface (second inclined surface 302). Therefore, when the position of the lens unit 100j in the x-axis direction is adjusted by the manufacturing equipment in the first alignment step, the position in the x-axis direction can be adjusted with an accuracy equal to the accuracy of the manufacturing equipment, and the position in the y-axis direction can be adjusted with an accuracy higher than the accuracy of the manufacturing equipment. Note that, in this first alignment step, it is preferable that the lens unit 100j be moved as a unit.

[0372] As described above, in this embodiment, the position in the z-axis direction and the position in the y-axis direction can be adjusted with higher accuracy than the precision of the manufacturing equipment, thereby realizing the semiconductor laser device 1j with high accuracy in adjusting the position of the cylindrical lens 110, which is a collimator lens.

[0373] [Effects, etc.] In the semiconductor laser device 1j according to the fourth embodiment, the lens unit 100j has a second installation surface. The second installation surface is fixed to a second installation surface. When viewed from the emission direction d1 of the laser light L1, the generatrix 115 is inclined with respect to the second installation surface.

[0374] As a result, as described above, when the position of the lens unit 100j in the x-axis direction is adjusted by the manufacturing equipment, the position in the x-axis direction can be adjusted with an accuracy equal to the accuracy of the manufacturing equipment, and the position in the y-axis direction can be adjusted with an accuracy higher than the accuracy of the manufacturing equipment. In other words, the semiconductor laser device 1j is realized with high accuracy in adjusting the position of the cylindrical lens 110, which is a collimator lens.

[0375] (Embodiment 5) The following describes embodiment 5. The following description focuses on the differences from embodiment 4, and the description of commonalities will be omitted or simplified.

[0376] Fig. 39 is a perspective view showing the configuration of a semiconductor laser device 1k according to this embodiment, Fig. 40 is a plan view showing the configuration of the semiconductor laser device 1k according to this embodiment, and Fig. 41 is a front view showing the configuration of the semiconductor laser device 1k according to this embodiment.

[0377] The semiconductor laser device 1k according to the present embodiment has the same configuration as the semiconductor laser device 1j according to the fourth embodiment, except that it includes a lens portion 100k instead of the lens portion 100j and a fixing member 300k instead of the fixing member 300. For simplicity, the two first bonding members 161 and the two second bonding members 162 are not shown in FIG.

[0378] The lens unit 100k has a cylindrical lens 110, a support member 120k, a first installation surface, a second installation surface, and a first installation surface.

[0379] The support member 120k includes a first support member 121k, a second support member 122k, and a third support member 123k.

[0380] The first support member 121k is an elongated member extending in the x-axis direction and has an upper surface, a lower surface, a ninth side surface 1219, a tenth side surface 12110, and an eleventh side surface 12111. The upper surface of the first support member 121k is a plane that is bonded to the lower surface of the cylindrical lens 110 and is a plane parallel to the xy plane. A portion of the lower surface of the first support member 121k is a plane that is bonded to the third support member 123k. The ninth side surface 1219 is a plane that is bonded to the second support member 122k. The tenth side surface 12110 is parallel to the zy plane and is a plane on the positive side of the x-axis. The eleventh side surface 12111 is parallel to the zy plane and is a plane on the negative side of the x-axis.

[0381] The second support member 122k is an elongated member extending in the x-axis direction and has an upper surface, a lower surface, and a twelfth side surface 12212. The upper surface of the second support member 122k is a plane that is bonded to the lower surface of the cylindrical lens 110 and is a plane parallel to the xy plane. The lower surface of the second support member 122k is a plane that is bonded to the third support member 123k. The twelfth side surface 12212 is a plane that is bonded to the ninth side surface 1219 of the first support member 121k.

[0382] The ninth side surface 1219 and the twelfth side surface 12212 are parallel to each other and are inclined with respect to the zx plane. The ninth side surface 1219 and the twelfth side surface 12212 are inclined in the x-axis direction from the zx plane, and in this embodiment, are inclined in a direction rotated around the z-axis from the zx plane.

[0383] The first installation surface of the lens unit 100k according to this embodiment corresponds to the ninth side surface 1219 of the first support member 121k. The first installation surface (ninth side surface 1219) is fixed to a first installation surface of the lens unit 100k. The first installation surface corresponds to the twelfth side surface 12212 of the second support member 122k.

[0384] The third support member 123k is an elongated member extending in the x-axis direction, and more specifically, is a triangular prism-shaped member. The third support member 123k has an upper surface, a lower surface 123kB, and a thirteenth side surface 12313. The upper surface of the third support member 123k is a plane that is joined to a portion of the lower surface of the first support member 121k and the lower surface of the second support member 122k, and is a plane parallel to the xy plane. The lower surface 123kB is a plane that is joined to the fixing member 300k. The thirteenth side surface 12313 is a plane that is parallel to the zy plane and is on the positive side of the x-axis.

[0385] The fixing member 300k is placed on and joined to the base 502. The fixing member 300k is an elongated member extending in the x-axis direction, and more specifically, is a member having a triangular prism shape.

[0386] The fixing member 300k has an upper surface 300kT and a lower surface. The upper surface 300kT is a flat surface that is joined to the lower surface 123kB of the third support member 123k, and the lower surface of the fixing member 300k is a flat surface that is joined to the upper surface of the base 502 and is parallel to the xy plane.

[0387] The lower surface 123kB and the upper surface 300kT are parallel to each other and are inclined with respect to the xy plane. The lower surface 123kB and the upper surface 300kT are inclined in the x-axis direction from the xy plane, and in this embodiment, are inclined in a direction rotated around the y-axis from the xy plane.

[0388] The second installation surface of the lens unit 100k according to this embodiment corresponds to the lower surface 123kB of the third support member 123k. The second installation surface (lower surface 123kB) is fixed to the second installation surface of the fixing member 300k. The second installation surface corresponds to the upper surface 300kT.

[0389] Here, attention will be focused on the bus bar 115 and the first installation surface (twelfth side surface 12212) according to this embodiment.

[0390] As described above, the twelfth side surface 12212 is a plane that is inclined in the x-axis direction from the zx plane. The generatrix 115 is parallel to the zx plane. Therefore, in a plan view, the generatrix 115 of the cylindrical lens 110 is inclined with respect to the first installation surface (the twelfth side surface 12212).

[0391] In addition, in a plan view, the angle formed between the generatrix 115 of the cylindrical lens 110 and the first installation surface (twelfth side surface 12212) is an angle α, and as an example, the angle |α| is less than 45°.

[0392] Further, attention will be paid to the bus bar 115 and the second installation surface (upper surface 300 kT) according to this embodiment.

[0393] As described above, the upper surface 300kT is a plane inclined with respect to the xy plane. The generatrix 115 is parallel to the xy plane. Therefore, in a front view, the generatrix 115 of the cylindrical lens 110 is inclined with respect to the second installation surface (the upper surface 300kT).

[0394] The angle formed between the generatrix 115 of the cylindrical lens 110 and the second installation surface (upper surface 300kT) in a front view is defined as angle β. As an example, angle |β| is less than 45°.

[0395] Here, it will be explained that the effects described in the fourth embodiment are also achieved in the fifth embodiment.

[0396] First, the effect of the inclination of the busbar 115 relative to the first installation surface (twelfth side surface 12212) in a plan view, that is, the angle α, will be described.

[0397] Here, we consider an example in which, in the first alignment step, the cylindrical lens 110 and the first support member 121k are fixed, and the cylindrical lens 110 and the first support member 121k are moved together so that the first installation surface (ninth side surface 1219) moves along the first installation surface (twelfth side surface 12212).

[0398] As described above, in a plan view, the generatrix 115 is inclined with respect to the first installation surface (twelfth side surface 12212). Therefore, when the positions of the cylindrical lens 110 and the first support member 121k in the x-axis direction are adjusted by manufacturing equipment, the positions in the x-axis direction can be adjusted with an accuracy equal to the accuracy of the manufacturing equipment, and the positions in the y-axis direction can be adjusted with an accuracy higher than the accuracy of the manufacturing equipment.

[0399] Furthermore, the effect of the inclination of the busbar 115 relative to the first installation surface (twelfth side surface 12212) when viewed from the front, that is, the angle β, will be described.

[0400] In the second alignment step, when the position of the lens unit 100k in the x-axis direction is adjusted by the manufacturing equipment, the position of the lens unit 100k in the x-axis direction can be adjusted with an accuracy equal to the accuracy of the manufacturing equipment, and the position of the lens unit 100k in the z-axis direction can be adjusted with an accuracy higher than the accuracy of the manufacturing equipment. Note that, in this second alignment step, it is preferable that the lens unit 100k is moved as a unit.

[0401] As described above, in this embodiment, the position in the z-axis direction and the position in the y-axis direction can be adjusted with higher accuracy than the precision of the manufacturing equipment, thereby realizing the semiconductor laser device 1k in which the position of the cylindrical lens 110, which is a collimator lens, can be adjusted with high accuracy.

[0402] In the present embodiment, the fixing member 300k is a member that is installed on the base 502, but this is not limiting. For example, the fixing member 300k and the base 502 may be an integrated member.

[0403] Sixth Embodiment Hereinafter, a sixth embodiment will be described. The following description will focus on the differences from the first embodiment, and the description of the commonalities will be omitted or simplified.

[0404] Fig. 42 is a plan view showing the configuration of a semiconductor laser device 1m according to this embodiment, Fig. 43 is a front view showing the configuration of a semiconductor laser device 1m according to this embodiment, and Fig. 44 is a side view showing the configuration of a semiconductor laser device 1m according to this embodiment.

[0405] The semiconductor laser device 1 m according to this embodiment has the same configuration as the semiconductor laser device 1 according to the first embodiment, except that the lens portion 100 is replaced with a lens portion 100 m.

[0406] The lens unit 100m includes a cylindrical lens 110 and a support member 120m. The support member 120m has the same configuration as the support member 120 except that the support member 120m includes a first inclined surface 122m instead of the first inclined surface 122.

[0407] The first inclined surface 122m is a plane inclined with respect to the zx plane, and is inclined in a direction rotated from the zx plane around the z-axis and in a direction rotated around the x-axis. The first inclined surface 122m is bonded to a plane that is the incident surface 110R of the cylindrical lens 110. The plane that is the incident surface 110R of the cylindrical lens 110 and the generatrix 115 are parallel to the first inclined surface 122m. Therefore, in a planar view, the generatrix 115 of the cylindrical lens 110 is inclined with respect to the first side surface 231, which is the first installation surface, and the zx plane.

[0408] Therefore, when the position of the lens unit 100m in the x-axis direction is adjusted by the manufacturing equipment, the position in the x-axis direction can be adjusted with an accuracy equal to the accuracy of the manufacturing equipment, and the position in the y-axis direction can be adjusted with an accuracy higher than the accuracy of the manufacturing equipment. That is, in the present embodiment, as in the first embodiment, a semiconductor laser device 1m in which the position adjustment accuracy of the cylindrical lens 110, which is a collimator lens, is high is realized.

[0409] (Embodiment 7) The following describes embodiment 7. The following mainly describes the differences from embodiment 3, and the description of commonalities will be omitted or simplified.

[0410] Fig. 45 is a plan view showing the configuration of a semiconductor laser device 1n according to this embodiment. Fig. 46 is a side view showing the configuration of a semiconductor laser device 1n according to this embodiment. In Fig. 46, an enlarged view of a part of the semiconductor laser device 1n is shown within a rectangular dashed line.

[0411] The semiconductor laser device 1n according to the present embodiment has the same configuration as the semiconductor laser device 1e according to the third embodiment, except that it includes a fixing member 300n instead of the fixing member 300 and a lens portion 100n instead of the lens portion 100e. Note that in FIG. 46, the two first bonding members 161 are not shown.

[0412] The fixing member 300n has the same configuration as the fixing member 300, except that it has a second inclined surface 302n instead of the second inclined surface 302. Fig. 47 is a perspective view showing the configuration of the fixing member 300n according to this embodiment.

[0413] The second inclined surface 302n has a flat portion 3021n and a convex portion 3022n that protrudes from the flat portion 3021n toward the negative side of the y-axis. The convex portion 3022n is a linear protrusion that extends in the x-axis direction along the flat portion 3021n. Note that the shape of the convex portion 3022n in a side view may be any shape as long as it protrudes from the flat portion 3021n, but in this embodiment, it is triangular. Like the second inclined surface 302 of the fixing member 300, the flat portion 3021n is a plane that is inclined with respect to the zx plane. In this embodiment, the first installation surface corresponds to the second inclined surface 302n.

[0414] The lens unit 100n has the same configuration as the lens unit 100g, except that the lens unit 100n has a support member 120n instead of the support member 120.

[0415] The support member 120n has the same configuration as the support member 120 according to the third embodiment, except that it has a first inclined surface 122n instead of the first inclined surface 122e.

[0416] The first inclined surface 122n has a flat portion 1221n and a recessed portion 1222n recessed from the flat portion 1221n toward the negative side of the y-axis. The recessed portion 1222n is a linear recess extending in the x-axis direction along the flat portion 1221n. As shown in FIG. 46 , the recessed portion 1222n may have any shape as long as it can fit into the protruding portion 3022n. The flat portion 1221n is a plane inclined with respect to the zx plane, similar to the first inclined surface 122 of the support member 120. In this embodiment, the first installation surface corresponds to the first inclined surface 122n.

[0417] In the first alignment step, the lens unit 100 n is moved while the convex portion 3022 n is fitted into the concave portion 1222 n, making it difficult for the lens unit 100 n to move in the z-axis direction. This makes it possible to further improve the accuracy of position adjustment of the cylindrical lens 110.

[0418] (Other Embodiments) While the semiconductor laser device according to the present disclosure has been described above based on the embodiments and modifications thereof, the present disclosure is not limited to these embodiments and modifications thereof. As long as they do not deviate from the gist of the present disclosure, various modifications conceivable by a person skilled in the art to the embodiments and other forms constructed by combining some of the components of the embodiments and modifications thereof are also included in the scope of the present disclosure.

[0419] In the first embodiment, the first installation surface is the first inclined surface 122, which is a flat surface, but is not limited to this. For example, the first installation surface may be a first inclined surface 122n having a recess 1222n as shown in the seventh embodiment. That is, the first installation surface may be a flat surface, may have a recessed region such as the recess 1222n, or may have a protruding region. Similarly, each of the first installation surface, the second installation surface, and the second installation surface may be a flat surface, may have a recessed region, or may have a protruding region.

[0420] Furthermore, the above-described embodiments can be modified, substituted, added, omitted, and the like in various ways within the scope of the claims or their equivalents.

[0421] According to the present disclosure, it is possible to provide a semiconductor laser device in which the position of the collimator lens can be adjusted with high precision.

[0422] 1, 1a, 1aa, 1d, 1e, 1f, 1g, 1h, 1i, 1j, 1k, 1m, 1n, 2, 3, 4, 5, 6 Semiconductor laser device 10 Light source module 20, 20a, 20aa, 20d, 20f, 20g, 20h, 20i Laser unit L1, L2, L3, L4, L5, L6 Laser light 100, 100a, 100aa, 100b, 100c, 100d, 100e, 100i, 100j, 100k, 100m, 100n Lens section 110, 110b, 110c Cylindrical lens 110B, 121jB, 123kB Bottom surface 110R Incident surface 110F Emission surface 112 Cylindrical lens main body 115 Generatrix 116 Slope portion 116b Sixth side surface 117 Light incident plane 120, 120a, 120aa, 120d, 120i, 120j, 120k, 120m, 120n Support member 121, 121aa, 121e First parallel surface 121j, 121k First support member 120U, 122jT, 234, 300kT Top surface 122, 122aa, 122e, 122m, 122n, 121i First inclined surface 122j, 122k Second support member 123j, 123k Third support member 125, 125aa Support member main body 126 Fourth metal film 127 Fifth metal film 130 First metal film 131 First surface 161 First bonding member 162 Second bonding member 200 Semiconductor laser element 200a Active layer 200n N-electrode 200p P-electrode 200r Optical waveguide 201 Light-emitting region 205 Light-emitting end face 210, 210h2 Bonding member 230, 230a, 230aa, 230f, 230g, 230h, 230h2, 230i Submount 231, 231f, 231g, 231h, 231i First side surface 231iL, 231iR Outer side surface 231iF Central side surface 232, 232g Second side surface 233, 233g Third side surface 235 Submount main body 236i Submount base material 237i First spacer 238i Second spacer 239g Rear side surface 240 Second metal film 241 Second surface 250 Third metal film 251 Third surface 260 Sixth metal film 261 Sixth surface 300, 300k, 300n Fixing member 301 Second parallel surface 302, 302n Second inclined surface 304 Fourth side surface 305 Fifth side surface 501 Package 502 Base503 Frame body 550 Optical fiber 550a Core 552 Lead pin 561, 562, 563, 564, 565, 566, 567, 568 Metal wire 570 Auxiliary wiring member 600 SAC lens 700 Reflecting mirror 800 Condenser lens 1000, 1000i Substrate 1001, 1001i, 1002, 1002i, 1003, 1003i, 1004, 1004i, 1005, 1005i Cutting position 1117, 1251 First lens portion side surface 1118, 1252 Second lens portion side surface 1221n, 3021n Flat portion 1222n Recess 1217 Seventh side surface 1218 Eighth side surface 1219 Ninth side surface 1261 4th surface 1271 5th surface 3022n Convex portion 12110 10th side surface 12111 11th side surface 12212 12th side surface 12313 13th side surface D1, D2, D3, D4, y1, y2, y3, y4, y5, y6 Distance

Claims

1. A semiconductor laser device comprising: a semiconductor laser element that emits laser light from a light emitting end face; and a lens unit having a cylindrical lens and a first mounting surface, wherein the semiconductor laser element has an active layer, the cylindrical lens receives the laser light and reduces the divergence angle of the laser light in the fast axis direction, the first mounting surface is fixed to a first mounting surface, and in a plan view of the active layer, a generatrix of the cylindrical lens is inclined with respect to the first mounting surface.

2. A semiconductor laser device comprising: a semiconductor laser element that emits laser light from a light emitting end face; and a lens portion having a cylindrical lens and a first installation surface, wherein the semiconductor laser element has an active layer, the cylindrical lens receives the laser light and reduces the divergence angle of the laser light in the fast axis direction, the first installation surface is fixed to a first installation surface, and in a plan view of the active layer, the generatrix of the cylindrical lens is inclined with respect to the first installation surface.

3. The semiconductor laser device according to claim 1 or 2, wherein the angle α formed between the generatrix of the cylindrical lens and the first mounting surface in a plan view of the active layer is 0<|α|<22.5°.

4. The semiconductor laser device according to claim 1, wherein the angle α formed between the generatrix of the cylindrical lens and the first mounting surface in a plan view of the active layer is 0<|α|<6°.

5. The semiconductor laser device according to claim 1, wherein the angle α formed between the generatrix of the cylindrical lens and the first mounting surface in a plan view of the active layer is 0<|α|<3°.

6. The semiconductor laser device according to any one of claims 1 to 5, wherein the first mounting surface and the first mounting surface are in direct contact with each other.

7. The semiconductor laser device according to any one of claims 1 to 6, further comprising a submount on which the semiconductor laser element is mounted, the submount having an upper surface on which the semiconductor laser element is mounted and the first mounting surface perpendicular to the upper surface.

8. The semiconductor laser device according to any one of claims 1 to 6, comprising: a submount on which the semiconductor laser element is mounted; and a fixing member bonded to the submount, wherein the submount has an upper surface on which the semiconductor laser element is mounted, and the fixing member has the first mounting surface perpendicular to the upper surface.

9. The semiconductor laser device according to claim 7, wherein the light emitting end face and the first mounting surface are parallel to each other.

10. The semiconductor laser device according to claim 8, wherein the light-emitting end face and the generatrix are parallel to each other.

11. The semiconductor laser device according to any one of claims 1 to 6, wherein the lens portion has the cylindrical lens and a support member including a predetermined surface, and the first installation surface is the predetermined surface.

12. The semiconductor laser device according to claim 11, wherein the cylindrical lens has an incident surface onto which the laser light is incident, and the generatrix and the incident surface are parallel to each other.

13. The semiconductor laser device according to claim 12, wherein the support member is bonded to the incident surface.

14. The semiconductor laser device according to claim 12, wherein the cylindrical lens has a bottom surface that is perpendicular to the incident surface, and the support member is bonded to the bottom surface.

15. A semiconductor laser device according to any one of claims 1 to 6, wherein the lens section has a support member including the first installation surface, and the length of the first installation surface in the slow axis direction is different from the length of the first installation surface in the slow axis direction.

16. The semiconductor laser device according to claim 14, wherein the outer shape of the support member is larger than the outer shape of the cylindrical lens in a plan view of the active layer.

17. A semiconductor laser device according to any one of claims 1 to 6, wherein the lens portion has a second installation surface, the second installation surface is fixed to a second installation surface, and when viewed from the emission direction of the laser light, the generatrix is ​​inclined with respect to the second installation surface.

18. A method for manufacturing a semiconductor laser device, the semiconductor laser device comprising: a semiconductor laser element that emits laser light from a light emitting end face; and a lens portion having a cylindrical lens and a first installation surface, the semiconductor laser element having an active layer, the cylindrical lens reducing the spread angle of the laser light in the fast axis direction, and the first installation surface being fixed to a first installation surface, the manufacturing method including: an arrangement step of arranging the lens portion on the first installation surface so that a generatrix of the cylindrical lens is inclined with respect to the first installation surface in a plan view of the active layer; an alignment step of making the laser light emitted from the semiconductor laser element incident on the cylindrical lens and moving the arranged lens portion in a direction parallel to the first installation surface; and a fixing step of fixing the moved lens portion to the first installation surface.

19. The semiconductor laser device according to claim 7, wherein the submount has two side surfaces that are perpendicular to the top surface and parallel to the cavity direction, and two other side surfaces that are perpendicular to the top surface, inclined with respect to the slow-axis direction in a plan view of the active layer, and parallel to each other, and the first mounting surface is one of the two other side surfaces.

20. The semiconductor laser device according to claim 15, comprising a submount on which the semiconductor laser element is mounted, wherein the length of the first mounting surface in the slow axis direction is longer than the length of the first mounted surface in the slow axis direction, the submount having an upper surface on which the semiconductor laser element is mounted, the first mounted surface perpendicular to the upper surface, and two parallel side surfaces perpendicular to the upper surface and each having a metal film formed thereon, and the lens portion having a metal film having the first mounting surface.

21. The semiconductor laser device according to claim 15, comprising a submount on which the semiconductor laser element is mounted, wherein the length of the first mounting surface in the slow axis direction is shorter than the length of the first mounting surface in the slow axis direction, the submount having: an upper surface on which the semiconductor laser element is mounted; and a metal film having the first mounting surface, the first mounting surface being orthogonal to the upper surface, the lens portion being connected to the first mounting surface and having two lens portion side surfaces each formed with a metal film, one of the two lens portion side surfaces being located at one end of the slow axis direction in a planar view of the active layer, and the other of the two lens portion side surfaces being located at the other end of the slow axis direction in a planar view of the active layer.

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