Hybrid insulating film, and preparation method therefor and use thereof

Abstract

Disclosed in the present invention are a hybrid insulating film, and a preparation method therefor and a use thereof. The component of the hybrid insulating film of the present invention is a polyaniline doped metal oxide; the metal in the metal oxide is selected from Zr, Hf, Sc, Al, and Ti. According to the present invention, polyaniline is doped in the metal oxide, and an internal defect of the metal oxide is filled with polyaniline, so as to promote formation of an oxygen-metal-oxygen network. On one hand, the temperature in a preparation process of the film can be remarkably reduced, and on the other hand, the density, the dielectric property, and the bending resistance of the film are improved, thereby achieving the use in low-power-consumption and high-performance flexible oxide TFT devices.

Description

A hybrid insulating film and its preparation method and application Technical Field

[0001] The present invention relates to the field of thin film transistor technology, in particular to a hybrid insulating film and its preparation method and application Background Art

[0002] As flexible electronics develop towards miniaturization and high integration, the power consumption of electronic devices has become a problem to be solved. The gate insulating layer in thin-film transistor (TFT) devices regulates carrier transport through field effects, and its quality and smooth surface can effectively improve device stability. Traditional gate insulating materials such as silicon oxide and silicon nitride have problems such as low dielectric constant and poor flexibility, while high-k oxide dielectric materials can reduce the thickness of the insulating layer and improve the bending resistance of the device. However, high-k oxide films are limited in flexible electronic applications due to high process temperatures, incompatibility with flexible plastic substrates, and inherent brittleness. In contrast, organic dielectric materials have the characteristics of flexibility, low cost, and easy processing, but their low dielectric constant, poor thermal stability, and high leakage current make it difficult to achieve low-power, high-performance flexible TFT devices.

[0003] Therefore, it is of great significance to develop a new insulating film.

[0004] Summary of the Invention

[0005] The present invention aims to solve at least one of the technical problems existing in the prior art. To this end, the first aspect of the present invention provides a hybrid insulating film with high film density, reduced leakage current, and high dielectric properties.

[0006] The second aspect of the present invention also provides a method for preparing a hybrid insulating film.

[0007] The third aspect of the present invention further provides a thin film transistor.

[0008] The fourth aspect of the present invention further provides an application of a hybrid insulating film.

[0009] According to the hybrid insulating film provided by the embodiment of the first aspect of the present invention, the component of the hybrid insulating film is polyaniline doped with metal oxide; the metal in the metal oxide is selected from Zr, Sc, Hf, Al, and Ti.

[0010] The hybrid insulating film according to the embodiment of the present invention has at least the following beneficial effects:

[0011] The present invention dopes metal oxide with polyaniline, which fills defects within the metal oxide and promotes the formation of an oxygen-metal-oxygen network. This significantly reduces the film preparation process temperature while also improving the film's density, dielectric properties, and bending resistance, further enhancing device stability. This enables the application of low-power, high-performance flexible oxide TFT devices.

[0012] Furthermore, the present invention introduces polyaniline to make the hybrid insulating film isotropic, thereby enhancing its anti-bending performance and thus improving the stability of the device.

[0013] The hybrid insulating film of the present invention is an amorphous hybrid insulating film, which has good film uniformity, can realize large-scale preparation of devices and uniform distribution of electrical properties.

[0014] According to some embodiments of the present invention, the hybrid insulating film has a thickness of 30 nm to 300 nm.

[0015] According to some embodiments of the present invention, the thickness of the hybrid insulating film is 90 nm to 150 nm.

[0016] According to a second aspect of the present invention, a method for preparing a hybrid insulating film is provided, comprising the following steps:

[0017] Mixing a metal salt or metal alkoxide, polyaniline and a solvent to obtain a precursor solution, coating the precursor solution on a substrate, heating it and performing an annealing treatment to obtain the hybrid insulating film;

[0018] The heating refers to heating from room temperature to 200°C to 250°C.

[0019] The method for preparing the hybrid insulating film according to the embodiment of the present invention has at least the following beneficial effects:

[0020] The present invention prepares a stable hybrid solution by studying the composite between the precursor solution components, metal-containing compounds and polyaniline components, which can significantly reduce the preparation temperature, defects and leakage current of the insulating film, and is of great significance for the solution method processing of insulating films.

[0021] In addition, the invention can avoid adding a coupling agent by introducing polyaniline, and the preparation method is simpler.

[0022] According to some embodiments of the present invention, the mass percentage of the polyaniline is 0.045% to 0.11% based on the total mass of the precursor solution. Therefore, if the mass percentage is lower than 0.045%, the effect is not significant, and if the mass percentage is higher than 0.11%, precipitation may occur.

[0023] According to some embodiments of the present invention, the metal salt or metal alkoxide includes Zr(NO3)4, ZrO(NO3)2, (C5H8O2)4Zr, C 12 H 28 At least one of O4Zr, HfCl4, (C5H8O2)4Hf, Sc(NO3)3, ScCl3, Al(NO3)3, AlCl3 or Ti[OCH(CH3)2]4.

[0024] According to some embodiments of the present invention, the annealing treatment time is 2 hours to 6 hours.

[0025] According to some embodiments of the present invention, the solvent includes C3H8O2, CH3CH2OH, (CH2OH)2, C3H7NO, C5H9NO, (C6H7N)n, (C5O2H8)N, C3H 10 O3Si, (C6H9NO)n and C 16 H 32 At least one of O5Si.

[0026] According to some embodiments of the present invention, n in the present invention is ≥1.

[0027] According to some embodiments of the present invention, the concentration of the precursor solution is 0.1 mol / L to 0.6 mol / L.

[0028] According to some embodiments of the present invention, the temperature increase is performed using a gradient temperature increase program.

[0029] According to some embodiments of the present invention, the substrate is subjected to a plasma treatment before coating the substrate.

[0030] According to some embodiments of the present invention, the coating method comprises spin coating.

[0031] According to some embodiments of the present invention, the rotation speed of the spin coating is 3000 rpm to 6000 rpm.

[0032] According to some embodiments of the present invention, the spin coating time is 20s to 40s.

[0033] According to some embodiments of the present invention, the coating is performed ≥1 times.

[0034] A third aspect of the present invention provides a thin film transistor comprising the hybrid insulating film of the present invention.

[0035] According to some embodiments of the present invention, the thin film transistor further includes an ITO glass substrate and an electrode located on the hybrid insulating film.

[0036] According to some embodiments of the present invention, the thickness of the electrode is 30 nm to 120 nm.

[0037] According to some embodiments of the present invention, the electrode comprises at least one of a silver electrode or an aluminum electrode.

[0038] A fourth aspect of the present invention provides a thin film electronic device comprising the hybrid insulating film of the present invention.

[0039] Other features and advantages of the present invention will be set forth in the description which follows, and in part will be obvious from the description, or may be learned by practice of the present invention. BRIEF DESCRIPTION OF THE DRAWINGS

[0040] The above and / or additional aspects and advantages of the present invention will become apparent and readily understood from the following description of the embodiments with reference to the accompanying drawings, in which:

[0041] FIG1 is a schematic structural diagram of a hybrid insulating layer thin film device prepared in Example 1 of the present invention;

[0042] FIG2 is an XRD diagram of the hybrid insulating layer films of Examples 1 to 3 of the present invention and Comparative Example 1;

[0043] 3 is a leakage current density curve of the hybrid insulating layer films of Examples 1 to 3 of the present invention and Comparative Example 1;

[0044] FIG4 is a capacitance density-frequency curve of the hybrid insulating layer thin film devices prepared in Examples 3 to 5 of the present invention;

[0045] FIG5 is a graph showing the optical transmittance of hybrid insulating layer thin film devices according to Examples 1 to 3 of the present invention and Comparative Example 1;

[0046] 6 is a leakage current density-electric field strength curve of the hybrid insulating layer film of Example 3 of the present invention after being bent at different times;

[0047] 7 is a diagram of the breakdown voltage of the hybrid insulating films prepared in Comparative Example 1, Example 3 and Example 6 of the present invention;

[0048] FIG8 shows the frequency stability test results of the hybrid insulating films prepared in Examples 3 and 6 of the present invention;

[0049] FIG9 shows the leakage current density test results of the hybrid film prepared in Example 7 of the present invention;

[0050] FIG10 shows the capacitance-voltage test results of the hybrid film prepared in Example 7 of the present invention;

[0051] FIG11 is a transfer characteristic curve of a TFT device made of a hybrid insulating film according to Example 3 of the present invention. DETAILED DESCRIPTION

[0052] The following are specific embodiments of the present invention, and the technical solutions of the present invention are further described in conjunction with the embodiments, but the present invention is not limited to these embodiments.

[0053] Unless otherwise specified, the reagents, methods and equipment used in the present invention are conventional reagents, methods and equipment in the art.

[0054] Example 1

[0055] Example 1 provides a hybrid insulating film, the preparation steps of which are as follows:

[0056] Precursor solution A: Dissolve 0.5152 g of Zr(NO3)4·5H2O (zirconium nitrate pentahydrate) in 2 mL of ethylene glycol monomethyl ether (2-MOE) solvent and stir at 45°C for 2 h to obtain a precursor solution A with a concentration of 0.6 mol / L.

[0057] Precursor solution B: Dissolve 0.22 g of polyaniline (PANI) in 2 mL of N-methylpyrrolidone (NMP) solvent and stir at 45°C for 2 h to obtain a precursor solution B with a concentration of 0.6 mol / L.

[0058] Precursor solution: 20 μL of precursor solution B and 1.98 mL of precursor solution A were taken out and mixed to obtain a precursor solution with a concentration of 0.6 mol / L; the mass percentage of polyaniline was 0.045%.

[0059] Substrate cleaning: Place the ITO glass substrate in ethanol and deionized water for 10 minutes respectively, and then put it in a drying oven to dry to obtain a clean ITO glass substrate;

[0060] The precursor solution was spin-coated on an ITO glass substrate using a KW-4A spin coater. After one spin coating, the solution was dried and then spin-coated a second time. The solution was then heated to 200° C. and annealed for 6 h to obtain a hybrid insulating film (85 nm thick).

[0061] Preparation of hybrid insulating layer thin film devices:

[0062] A 100 nm thick silver electrode was deposited on the hybrid insulating film obtained above by magnetron sputtering to produce an inorganic-organic hybrid insulating layer thin film device. The schematic structure of the resulting hybrid insulating layer thin film device is shown in Figure 1, where 1 is a glass substrate, 2 is an ITO bottom gate, and 3 is a hybrid insulating film.

[0063] Example 2

[0064] Example 2 provides a hybrid insulating film, the preparation steps of which are as follows:

[0065] Precursor solution A: Dissolve 0.5152 g of Zr(NO3)4·5H2O (zirconium nitrate pentahydrate) in 2 mL of ethylene glycol monomethyl ether (2-MOE) solvent and stir at 45°C for 2 h to obtain a precursor solution A with a concentration of 0.6 mol / L.

[0066] Precursor solution B: Dissolve 0.22 g of PANI in 2 mL of N-methylpyrrolidone (NMP) solvent and stir at 45°C for 2 h to obtain a precursor solution B with a concentration of 0.6 mol / L.

[0067] Precursor solution: 50 μL of precursor solution B and 1.95 mL of precursor solution A were taken out and mixed to obtain a precursor solution with a concentration of 0.6 mol / L; the mass percentage of polyaniline was 0.078%.

[0068] Substrate cleaning: Place the ITO glass substrate in ethanol and deionized water for 10 minutes respectively, and then put it in a drying oven to dry to obtain a clean ITO glass substrate;

[0069] The precursor solution was spin-coated on an ITO glass substrate using a KW-4A spin coater. After one spin coating, the solution was dried and then spin-coated a second time. The solution was then heated to 200° C. and annealed for 6 h to obtain a hybrid insulating film (85 nm thick).

[0070] Preparation of hybrid insulating layer thin film devices:

[0071] A 100 nm thick silver electrode was deposited on the hybrid insulating film obtained above by magnetron sputtering to obtain an inorganic-organic hybrid insulating layer thin film device.

[0072] Example 3

[0073] Example 3 provides a hybrid insulating film, the preparation steps of which are as follows:

[0074] Precursor solution A: Dissolve 0.5152 g of Zr(NO3)4·5H2O (zirconium nitrate pentahydrate) in 2 mL of ethylene glycol monomethyl ether (2-MOE) solvent and stir at 45°C for 2 h to obtain a precursor solution A with a concentration of 0.6 mol / L.

[0075] Precursor solution B: Dissolve 0.22 g of PANI in 2 mL of N-methylpyrrolidone (NMP) and stir at 45°C for 2 h to obtain a precursor solution B with a concentration of 0.6 mol / L.

[0076] Precursor solution: 100 μL of precursor solution B and 1.90 mL of precursor solution A were taken out and mixed to obtain a precursor solution with a concentration of 0.6 mol / L; the mass percentage of polyaniline was 0.11%.

[0077] Substrate cleaning: Place the ITO glass substrate in ethanol and deionized water for 10 minutes respectively, and then put it in a drying oven to dry to obtain a clean ITO glass substrate;

[0078] The precursor solution was spin-coated on an ITO glass substrate using a KW-4A spin coater. After one spin coating, the solution was dried and then spin-coated a second time. The solution was then heated to 200° C. and annealed for 6 h to obtain a hybrid insulating film (85 nm thick).

[0079] Preparation of hybrid insulating layer thin film devices:

[0080] A 100 nm thick silver electrode was deposited on the hybrid insulating film obtained above by magnetron sputtering to obtain an inorganic-organic hybrid insulating layer thin film device.

[0081] Example 4

[0082] Example 4 provides a hybrid insulating film, the preparation steps of which are as follows:

[0083] Precursor solution A: Dissolve 0.5152 g of Zr(NO3)4·5H2O (zirconium nitrate pentahydrate) in 2 mL of ethylene glycol monomethyl ether (2-MOE) solvent and stir at 45°C for 2 h to obtain a precursor solution A with a concentration of 0.6 mol / L.

[0084] Precursor solution B: Dissolve 0.22 g of PANI in 2 mL of N-methylpyrrolidone (NMP) solvent and stir at 45°C for 2 h to obtain a precursor solution B with a concentration of 0.6 mol / L.

[0085] Precursor solution: Take out 20 μL of precursor solution B and 1.98 mL of precursor solution A and mix them to obtain a precursor solution with a concentration of 0.6 mol / L;

[0086] Substrate cleaning: Place the ITO glass substrate in ethanol and deionized water for 10 minutes respectively, and then put it in a drying oven to dry to obtain a clean ITO glass substrate;

[0087] The precursor solution was spin-coated on an ITO glass substrate using a KW-4A spin coater. The solution was dried after spin coating once, dried after spin coating a second time, and then spin coated a third time. The solution was then heated to 200°C and annealed for 2 to 6 hours to obtain a hybrid insulating film (120 nm thick).

[0088] Preparation of hybrid insulating layer thin film devices:

[0089] A 100 nm thick silver electrode was deposited on the hybrid insulating film obtained above by magnetron sputtering to obtain an inorganic-organic hybrid insulating layer thin film device.

[0090] Example 5

[0091] Example 5 provides a hybrid insulating film, the preparation steps of which are as follows:

[0092] Precursor solution A: Dissolve 0.5152 g of Zr(NO3)4·5H2O (zirconium nitrate pentahydrate) in 2 mL of ethylene glycol monomethyl ether (2-MOE) solvent and stir at 45°C for 2 h to obtain a precursor solution A with a concentration of 0.6 mol / L.

[0093] Precursor solution B: Dissolve 0.22 g of PANI in 2 mL of N-methylpyrrolidone (NMP) solvent and stir at 45°C for 2 h to obtain a precursor solution B with a concentration of 0.6 mol / L.

[0094] Precursor solution: Take out 20 μL of precursor solution B and 1.98 mL of precursor solution A and mix them to obtain a precursor solution with a concentration of 0.6 mol / L;

[0095] Substrate cleaning: Place the ITO glass substrate in ethanol and deionized water for 10 minutes respectively, and then put it in a drying oven to dry to obtain a clean ITO glass substrate;

[0096] The precursor solution was spin-coated on an ITO glass substrate using a KW-4A spin coater for one time, and then annealed at 200° C. for 6 h to obtain a hybrid insulating film (38 nm thick).

[0097] Preparation of hybrid insulating layer thin film devices:

[0098] A 100 nm thick silver electrode was deposited on the hybrid insulating film obtained above by magnetron sputtering to obtain an inorganic-organic hybrid insulating layer thin film device.

[0099] Example 6

[0100] Example 6 provides a hybrid insulating film, the preparation steps of which are as follows:

[0101] Precursor solution A: Dissolve 0.5152 g of Zr(NO3)4·5H2O (zirconium nitrate pentahydrate) in 2 mL of ethylene glycol monomethyl ether (2-MOE) solvent and stir at 45°C for 2 h to obtain a precursor solution A with a concentration of 0.6 mol / L.

[0102] Precursor solution B: Dissolve 0.22 g of PANI in 2 mL of N-methylpyrrolidone (NMP) solvent and stir at 45°C for 2 h to obtain a precursor solution B with a concentration of 0.6 mol / L.

[0103] Precursor solution: Take out 100 μL of precursor solution B and 1.90 mL of precursor solution A and mix them to obtain a precursor solution with a concentration of 0.6 mol / L;

[0104] Substrate cleaning: Place the ITO glass substrate in ethanol and deionized water for 10 minutes respectively, and then put it in a drying oven to dry to obtain a clean ITO glass substrate;

[0105] The precursor solution was spin-coated on an ITO glass substrate using a KW-4A spin coater. The coating was performed once, and then the temperature was raised to 250° C. and annealed for 2 h to obtain a hybrid insulating film (with a thickness of 82 nm).

[0106] Preparation of hybrid insulating layer thin film devices:

[0107] A 100 nm thick silver electrode was deposited on the hybrid insulating film obtained above by magnetron sputtering to obtain an inorganic-organic hybrid insulating layer thin film device.

[0108] Example 7

[0109] Example 7 provides a hybrid insulating film, the preparation steps of which are as follows:

[0110] Precursor solution A: Dissolve 0.45 g of Al(NO3)3·9H2O (aluminum nitrate nonahydrate) in 2 mL of ethylene glycol monomethyl ether (2-MOE) solvent and stir at 45°C for 2 h to obtain a precursor solution A with a concentration of 0.6 mol / L.

[0111] Precursor solution B: Dissolve 0.22 g of PANI in 2 mL of N-methylpyrrolidone (NMP) solvent and stir at 45°C for 2 h to obtain a precursor solution B with a concentration of 0.6 mol / L.

[0112] Precursor solution: Take out 100 μL of precursor solution B and 1.90 mL of precursor solution A and mix them to obtain a precursor solution with a concentration of 0.6 mol / L;

[0113] Substrate cleaning: Place the ITO glass substrate in ethanol and deionized water for 10 minutes respectively, and then put it in a drying oven to dry to obtain a clean ITO glass substrate;

[0114] The precursor solution was spin-coated on an ITO glass substrate using a KW-4A spin coater. The coating was performed once, and then the temperature was raised to 250° C. and annealed for 2 h to obtain a hybrid insulating film (with a thickness of 86 nm).

[0115] Preparation of hybrid insulating layer thin film devices:

[0116] A 100 nm thick silver electrode was deposited on the hybrid insulating film obtained above by magnetron sputtering to obtain an inorganic-organic hybrid insulating layer thin film device.

[0117] Comparative Example 1

[0118] Comparative Example 1 provides an insulating film, and the preparation steps are as follows:

[0119] S1. Preparation of precursor solution: Dissolve 0.5152 g of Zr(NO3)4·5H2O (zirconium nitrate pentahydrate) in 2 mL of ethylene glycol monomethyl ether (2-MOE) solvent and stir at 45°C for 2 h to obtain a precursor solution with a concentration of 0.6 mol / L.

[0120] S2. Substrate cleaning: The ITO glass substrate was cleaned in ethanol and deionized water for 10 min each, and then dried in a drying oven to obtain a clean ITO glass substrate.

[0121] S3. The precursor solution obtained in step S1 was spin-coated on an ITO glass substrate using a KW-4A spin coater. The solution was dried after spin coating once and then spin-coated a second time. The temperature was then raised to 200°C and annealed for 2 to 6 hours to obtain an insulating film.

[0122] Preparation of insulating thin film devices:

[0123] A 100nm thick silver electrode is deposited on the insulating layer film by magnetron sputtering to obtain an insulating thin film device.

[0124] Performance Testing

[0125] The hybrid insulating films prepared in Examples 1-3 and Comparative Example 1 were subjected to XRD analysis. The results, shown in Figure 2, show no distinct peaks in the XRD patterns, indicating that the hybrid insulating films are amorphous. High-quality amorphous insulating films have promising applications in flexible electronic devices.

[0126] The insulating film devices prepared in Examples 1 to 3 and Comparative Example 1 were tested for leakage current density. The results are shown in FIG3 , which is an experimental graph of leakage current density curves. Analysis shows that the leakage current density (dielectric properties) of the film doped with polyaniline is significantly reduced.

[0127] Furthermore, the CV curves of the hybrid insulating thin film devices prepared in Examples 3 to 5 are shown in FIG4 . Analysis shows that the double-layer coated film has a relatively stable and high unit capacitance density.

[0128] Furthermore, the optical transmittance of the insulating films prepared in Examples 1 to 3 and Comparative Example 1 was tested, and the results are shown in FIG5 , indicating that the hybrid insulating films prepared in the present invention have high transmittance, meeting the requirements of transparent electronic devices.

[0129] Furthermore, a bending resistance test is performed on the prepared hybrid insulating film, and the specific steps are as follows:

[0130] Experimental method: The sample from Example 3 was bent multiple times with a fixed curvature radius of 5 mm, and then the JE (leakage current density-electric field strength) curve was measured. Experimental steps: (1) Prepare the sample on a PI substrate. (2) Fix both ends on the bending test equipment. (3) Repeat the bending. (4) Performance test.

[0131] Experimental data is shown in Figure 6. As can be seen, the leakage current of the film did not increase significantly after repeated bending cycles, from 1,000 to 10,000. This indicates that the hybrid film has excellent flexibility and bending resistance, and the fabricated device has high stability.

[0132] Furthermore, the breakdown voltages of the hybrid insulating films prepared in Comparative Example 1, Example 3, and Example 6 were tested, and the test results are shown in Figure 7. The hybrid insulating film prepared in Example 6 broke down at an electric field strength of nearly 6 MV / cm, demonstrating that the hybrid insulating film has excellent breakdown resistance.

[0133] Furthermore, the frequency stability of the hybrid insulating films of Example 3 and Example 6 was tested. The test results are shown in FIG8 . The prepared films have very good stability in a wide frequency range from 1 K to 1 MHz.

[0134] Furthermore, the hybrid film of Example 7 was tested for leakage current density, and the test results are shown in FIG9 . The hybrid insulating film prepared in Example 7 has a leakage current density as low as 9×10 -7 A / cm 2 , which shows that the combination of PANI and metal oxide dielectric films has certain universality.

[0135] Furthermore, the hybrid insulating film of Example 7 was tested for capacitance-voltage. The test results are shown in FIG10 . The capacitance density per unit area of ​​the prepared film at a voltage of 10 V is as high as 600 nF / cm 2 This shows that the combination of PANI and metal oxide dielectric films can achieve very good capacitance characteristics. It also shows that the combination of PANI and metal oxide dielectric films has a certain universality.

[0136] Finally, a TFT device was prepared using the hybrid insulating film of Example 3 as the dielectric layer, ITZO as the active layer, and ITO as the electrode. The transfer characteristic curve of the TFT device is shown in Figure 11. The on / off ratio of the prepared TFT device is 1.07×10 5 , the migration rate is 6.25cm 2 / V s. This shows that the dielectric film has very good applicability in TFT devices.

[0137] The above is a detailed description of the embodiments of the present invention, but the present invention is not limited to the above embodiments. Various changes can be made within the knowledge of ordinary technicians in the relevant technical field without departing from the scope of the present invention.

Claims

1. A hybrid insulating film, characterized in that: The hybrid insulating film is composed of polyaniline doped with metal oxide; the metal in the metal oxide is selected from Zr, Hf, Sc, Al, and Ti.

2. The hybrid insulating film according to claim 1, characterized in that The thickness of the hybrid insulating film is 30nm to 300nm.

3. The method for preparing a hybrid insulating film according to claim 1 or 2, characterized in that: The steps include: Mixing a metal salt or metal alkoxide, polyaniline and a solvent to obtain a precursor solution, coating the precursor solution on a substrate, heating it and performing an annealing treatment to obtain the hybrid insulating film; The heating refers to heating from room temperature to 200°C to 250°C.

4. The preparation method according to claim 3, characterized in that Calculated based on the total mass of the precursor solution, the mass percentage of the polyaniline is 0.045% to 0.11%.

5. The preparation method according to claim 3, characterized in that The metal salt or metal alkoxide includes Zr(NO3)4, ZrO(NO3)2, (C5H8O2)4Zr, C 12 H 28 At least one of O4Zr, HfCl4, (C5H8O2)4Hf, Sc(NO3)3, ScCl3, Al(NO3)3, AlCl3 or Ti[OCH(CH3)2]4.

6. The preparation method according to claim 3, characterized in that The annealing treatment time is 2h to 6h.

7. The preparation method according to claim 3, characterized in that The solvent includes C3H8O2, CH3CH2OH, (CH2OH)2, C3H7NO, C5H9NO, (C6H7N)n, (C5O2H8)N, C3H 10 O3Si, (C6H9NO)n, and C 16 H 32 At least one of O5Si.

8. The preparation method according to claim 3, characterized in that The concentration of the precursor solution is 0.1 mol / L to 0.6 mol / L.

9. A thin film transistor, characterized in that: The hybrid insulating film comprises the hybrid insulating film according to claim 1 or 2.

10. Use of the hybrid insulating film according to claim 1 or 2 in the preparation of thin film electronic devices.

11. A thin film electronic device, characterized in that: The hybrid insulating film comprises the hybrid insulating film according to claim 1 or 2.

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