Semiconductor substrate and semiconductor thin film deposition apparatus

Abstract

A semiconductor substrate of the present invention may comprise a substrate and a semiconductor layer disposed on the substrate. The semiconductor layer can be deposited by supplying additional energy to any one of CVD, ALD, and sputtering methods during a thin film growth process step. The additional energy can be at least one from among plasma, a laser, and an LED light source. For example, the substrate can be a glass substrate, and the semiconductor layer can be a nitride semiconductor layer having a single-crystal surface. The semiconductor layer can be deposited by increasing kinetic energy of a source or a target that deposits the semiconductor layer with the additional energy.

Description

Semiconductor substrate and semiconductor thin film deposition device

[0001] The present invention relates to a semiconductor substrate and a semiconductor thin film deposition apparatus, and more particularly, to a semiconductor substrate and a semiconductor thin film deposition apparatus that use ion beam sputtering to lower a thin film deposition temperature and grow a semiconductor layer having a single crystal plane from the thin film growth stage.

[0002] Nitride semiconductors, such as GaN, are expected to advance the electronics industry. This is due to their unique and outstanding physical and chemical properties. Unlike conventional Si or GaAs compound semiconductors, GaN possesses a direct bandgap structure, and its bandgap can be tuned from 0.8 to 6.2 eV using alloys of In or Al. This makes GaN highly valuable for use in optical devices such as light-emitting diodes (LEDs). Furthermore, GaN has a high breakdown voltage and is stable at high temperatures, making it useful in various fields such as high-power devices and high-temperature electronic devices that cannot be realized with conventional materials. Examples include full-color TVs, large-screen displays, traffic lights, light sources for optical recording media, and high-power transistors in automobile engines.

[0003] Conventional representative technologies for forming nitride semiconductor single crystals include MOCVD (Metal Organic CVD) and MBE (Molecular Beam Epitaxy). However, in order to obtain a nitride semiconductor thin film using these methods, the substrate temperature must be maintained at around 1,000 to 1,100°C. Accordingly, the substrates on which nitride semiconductor thin films are formed are limited to single-crystal sapphire (Al2O3), silicon (Si), and silicon carbide (SiC), which have relatively high transformation temperatures. However, in the case of sapphire substrates, it is difficult to produce large-area wafers larger than 6 inches, and the high production cost makes it difficult to implement large-area displays such as large TVs. In addition, in the case of sapphire substrates, deterioration problems such as substrate warping due to thermal expansion of the substrate may occur, and damage to the thin film may be a problem due to differences in lattice constants and coefficients of thermal expansion between the nitride semiconductor thin film formed on the substrate and the substrate.

[0004] In particular, when growing a nitride semiconductor thin film on a single-crystal sapphire substrate using the MOCVD method, a process of transferring the LED to a second substrate, such as a glass substrate, is essential, for example, in the manufacturing process of a micro LED display. When LED transfer is required, the LED manufacturing and transfer process costs are high, so the production cost of the display increases significantly, and consequently, the production cost of large-scale TVs using light-emitting elements such as micro LEDs increases.

[0005] Therefore, structures and manufacturing methods of nitride semiconductors capable of growing nitride semiconductor thin films on substrates other than sapphire substrates have been proposed. For example, Korean Patent Publication No. 10-2009-0081879, "Method for Manufacturing Nitride Semiconductor Substrate," proposes a manufacturing method for manufacturing a nitride semiconductor by growing aluminum nitride having a single crystal plane using a Si substrate having a single crystal plane. For example, Korean Patent Publication No. 10-2012-0076000, "Method for Room Temperature Sputtering of Group III Nitride by Applying Pulse-Phase DC Bias Substrate," proposes a method for manufacturing a nitride substrate with improved crystallinity by lowering the growth temperature through a room temperature sputtering method that applies a substrate bias.

[0006] However, there has been no research result on growing a gallium nitride semiconductor thin film having a single crystal plane on an amorphous substrate or a polycrystalline substrate.

[0007] One object of the present invention is to provide a semiconductor substrate that provides additional energy to a thin film growth process, thereby lowering the growth temperature of the thin film compared to a conventional process.

[0008] Another object of the present invention is to provide a method for manufacturing a semiconductor substrate, which can produce micro LED displays, solar cells, thin film transistors, nitride semiconductor substrates, silicon semiconductor substrates, light-emitting diodes, power semiconductor devices, etc., without a separate transfer process by directly depositing a semiconductor layer on a substrate such as glass, a polymer film such as polyimide, or stainless steel.

[0009] However, the problem to be solved by the present invention is not limited to the problem mentioned above, and may be expanded in various ways without departing from the spirit and scope of the present invention.

[0010] In order to achieve one object of the present invention, a semiconductor substrate according to embodiments of the present invention may include a substrate, and a semiconductor layer disposed on the substrate. The semiconductor layer may be deposited by supplying additional energy by an additional energy supply unit of any one of CVD (Chemical Vapor Depostion), ALD (Atomic Layer Deposition), or sputtering methods such as CVD (Chemical Vapor Depostion), LPCVD (Low Pressure CVD), MPCVD (Microwave Plasma CVD), MOCVD (Metal Organic CVD), HDPCVD (High Density Plasma CVD), PECVD (Plasma Enhanced CVD), APCVD (Atomospheric Pressure CVD), etc., during a thin film growth process step. The additional energy may be supplied by at least one or more of a plasma, a laser, and an LED light source.

[0011] In one embodiment, the substrate may be a glass substrate, and the semiconductor layer may be a nitride semiconductor layer having a single crystal plane. The semiconductor layer may be deposited by a nitride source that is supplied with additional energy by the plasma, laser, and LED light sources.

[0012] In one embodiment, the additional energy supply by the plasma, laser and LED may be provided by at least one of helium (He), neon (Ne), argon (Ar), krypton (Kr), xenon (Xe), radon (Rn), hydrogen (H2), oxygen (O2), nitrogen (N2), chlorine (Cl2), and ammonia (NH3).

[0013] In one embodiment, the target for forming the nitride semiconductor layer may include gallium (Ga) or gallium nitride (GaN).

[0014] In one embodiment, the semiconductor layer may have a deposition temperature of 600 degrees (°C) or less in the thin film growth process step.

[0015] In one embodiment, the substrate can be at least one of an amorphous substrate and a polycrystalline substrate.

[0016] In one embodiment, the substrate can be at least one of a glass substrate, a quartz substrate, a stainless steel substrate, and a polymer substrate.

[0017] In one embodiment, the semiconductor layer may be a silicon semiconductor layer having a crystal structure of any one of polycrystalline, microcrystalline, and nanocrystalline.

[0018] In one embodiment, the semiconductor layer may be an oxide semiconductor layer based on InGaZnO.

[0019] In one embodiment, the semiconductor layer may be a CuInSe2-based 1-3-5 group compound semiconductor layer.

[0020] In one embodiment, the substrate may further include an intermediate layer disposed between the substrate and the semiconductor layer, the intermediate layer comprising at least one of aluminum nitride and zinc oxide.

[0021] In order to achieve another object of the present invention, a semiconductor thin film deposition device according to embodiments of the present invention may include a thin film deposition unit for growing a semiconductor layer having a single crystal plane on an upper portion of a substrate by sputtering, and an energy supply unit for supplying additional energy of at least one of plasma, laser, and LED light source to the substrate. The energy supply unit may supply the additional energy to the substrate at the same time that the thin film deposition unit grows the semiconductor layer on the upper portion of the substrate.

[0022] A deposition device according to embodiments of the present invention is disposed on an upper portion of a substrate and includes a deposition unit that performs a plasma deposition process, and a pulse voltage application unit that applies a negative voltage to the substrate in a pulse form to irradiate plasma positive ions to the substrate, and the pulse voltage application unit can be configured to control the irradiation interval and energy of the plasma positive ions.

[0023] The pulse voltage applying unit according to embodiments of the present invention can supply a negative voltage modulated at a constant frequency to the substrate.

[0024] The plasma deposition process according to embodiments of the present invention may include one or more of CVD, ALD, or sputtering methods.

[0025] The plasma cation according to embodiments of the present invention includes at least one of helium (He), neon (Ne), argon (Ar), krypton (Kr), xenon (Xe), radon (Rn), hydrogen (H2), oxygen (O2), nitrogen (N2), chlorine (Cl2), or ammonia (NH3).

[0026] According to embodiments of the present invention, the semiconductor substrate may be provided with additional energy by one or more of plasma, laser, and LED during the thin film growth process, and thus a portion of the energy required for thin film deposition may be provided from the additionally supplied energy, thereby lowering the temperature of thin film growth compared to conventional processes. Accordingly, according to the present invention, a glass substrate, a quartz substrate, a stainless steel substrate, and a polymer substrate having a transformation temperature of 650 degrees (℃) or lower may be used in the semiconductor layer deposition process.

[0027] In addition, the present invention can grow a nitride semiconductor thin film having a single crystal plane from the thin film growth stage by increasing the kinetic energy of source ions or source particles by using additional energy supply by one or more of plasma, laser, and LED, so that the production process of the nitride semiconductor substrate can be simplified and the manufacturing cost of the nitride semiconductor substrate can be reduced.

[0028] In particular, since the semiconductor substrate according to embodiments of the present invention can directly deposit a semiconductor layer on a glass substrate, the light-emitting element chip manufacturing and transfer process can be omitted in the micro LED display production process. Accordingly, since the production costs associated with the LED chip manufacturing and transfer process are reduced, the manufacturing costs of large TVs including light-emitting elements such as micro LEDs can be significantly reduced.

[0029] However, the effects of the present invention are not limited to the above-described effects, and may be expanded in various ways without departing from the spirit and scope of the present invention.

[0030] FIG. 1 is a cross-sectional view of a semiconductor substrate according to embodiments of the present invention.

[0031] Figure 2 is a flowchart showing a method for manufacturing a semiconductor substrate of Figure 1.

[0032] FIG. 3 is a drawing showing a semiconductor thin film deposition device for manufacturing the semiconductor substrate of FIG. 1.

[0033] Figure 4 is a drawing showing a semiconductor layer being deposited in a thin film growth process step.

[0034] Figure 5 is a conceptual diagram showing an example of a thin film growth process step.

[0035] FIG. 6 is a drawing showing an example in which the semiconductor substrate of FIG. 1 is manufactured directly on a display backplane without a transfer process.

[0036] Figure 7 is a cross-sectional view of a semiconductor substrate with an added intermediate layer.

[0037] Figure 8 is a flowchart showing a method for manufacturing the semiconductor substrate of Figure 7.

[0038] Figure 9 is an XRD analysis graph comparing the growth of a semiconductor layer depending on the presence or absence of additional energy on a sapphire substrate.

[0039] Fig. 10 is an optical image showing a semiconductor layer corresponding to the XRD analysis graph of Fig. 9.

[0040] Figure 11 is an XRD analysis graph comparing the growth of a semiconductor layer depending on the presence or absence of additional energy on a glass substrate.

[0041] Fig. 12 is an optical image showing a semiconductor layer corresponding to the XRD analysis graph of Fig. 11.

[0042] Figure 13 is a graph comparing a semiconductor layer of a conventional MOCVD method with a method of applying additional energy to a sputtering method of the present invention.

[0043] FIG. 14 is a drawing illustrating plasma-assisted sputtering by deposition equipment according to one embodiment.

[0044] FIG. 15 is a drawing illustrating plasma-assisted CVD using deposition equipment according to one embodiment.

[0045] Fig. 16 is a drawing showing pulsed voltage modification (pulse voltage modification applied to a substrate) by a deposition device according to one embodiment.

[0046] Specific structural or functional descriptions of embodiments according to the concept of the present invention disclosed in this specification are merely illustrative for the purpose of explaining embodiments according to the concept of the present invention, and embodiments according to the concept of the present invention may be implemented in various forms and are not limited to the embodiments described in this specification.

[0047] Embodiments according to the concept of the present invention may have various modifications and take various forms, and thus, embodiments are illustrated in the drawings and described in detail in this specification. However, this is not intended to limit embodiments according to the concept of the present invention to specific disclosed forms, but rather includes modifications, equivalents, or alternatives that fall within the spirit and technical scope of the present invention.

[0048] While terms such as "first" or "second" may be used to describe various components, these components should not be limited by these terms. These terms are intended solely to distinguish one component from another. For example, a first component may be referred to as a "second component," and similarly, a second component may also be referred to as a "first component," without departing from the scope of the invention.

[0049] When a component is referred to as being "connected" or "connected" to another component, it should be understood that it may be directly connected or connected to that other component, but that there may be other components in between. Conversely, when a component is referred to as being "directly connected" or "directly connected" to another component, it should be understood that there are no other components in between. Expressions that describe relationships between components, such as "between," "immediately between," or "directly adjacent to," should be interpreted similarly.

[0050] The terminology used herein is for the purpose of describing specific embodiments only and is not intended to limit the present invention. The singular expressions include plural expressions unless the context clearly indicates otherwise. In this specification, it should be understood that the terms "comprises" or "has" are intended to specify the presence of a described feature, number, step, operation, component, part, or combination thereof, but do not preclude the possibility of the presence or addition of one or more other features, numbers, steps, operations, components, parts, or combinations thereof.

[0051] Unless otherwise defined, all terms used herein, including technical or scientific terms, have the same meaning as commonly understood by one of ordinary skill in the art to which this invention pertains. Terms defined in commonly used dictionaries should be interpreted as having a meaning consistent with their meaning in the context of the relevant technology, and will not be interpreted in an idealized or overly formal sense unless explicitly defined herein.

[0052] Hereinafter, embodiments will be described in detail with reference to the attached drawings. However, the scope of the patent application is not limited or restricted by these embodiments. The same reference numerals in each drawing represent the same components.

[0053] FIG. 1 is a cross-sectional view of a semiconductor substrate (10) according to embodiments of the present invention, and FIG. 2 is a flowchart showing a method for manufacturing the semiconductor substrate (10) of FIG. 1.

[0054] Referring to FIG. 1, a semiconductor substrate (10) according to embodiments of the present invention may include a substrate (100) and a semiconductor layer (200) disposed on the substrate (100).

[0055] In one embodiment, the semiconductor layer (200) may be a nitride semiconductor layer having a single crystal plane.

[0056] However, the semiconductor layer (200) of the present invention described below is not limited to a nitride semiconductor layer.

[0057] For example, the semiconductor layer (200) may be a silicon semiconductor layer having any one of a polycrystalline, microcrystalline, and nanocrystalline crystal structure.

[0058] For example, the semiconductor layer (200) may be an oxide semiconductor layer based on InGaZnO.

[0059] For example, the semiconductor layer (200) may be a CuInSe2-based 1-3-5 group compound semiconductor layer.

[0060] Conventional representative techniques for depositing a semiconductor layer (200) include MOCVD (Metal Organic CVD) and MBE (Molecular Beam Epitaxy). In order to deposit a semiconductor layer (200) using these conventional methods, the temperature of the substrate (100) must be maintained at approximately 1,000 to 1,100 degrees Celsius.

[0061] Therefore, when using the MOCVD (Metal Organic CVD) method or the MBE (Molecular Beam Epitaxy) method, the substrate (100) on which the semiconductor thin film is formed is limited to single crystal sapphire (Al2O3), silicon (Si), silicon carbide (SiC), etc., which have relatively high transformation temperatures.

[0062] However, these substrates (100) are difficult to produce large-area wafers of 12 inches or more, and their production cost is high, making it difficult to implement large-area displays such as large TVs.

[0063] In addition, when growing a semiconductor thin film on a sapphire substrate, a transfer process for transferring the light-emitting element to a glass substrate is essential in the process of manufacturing micro LEDs, so there is a problem that the production cost of micro LEDs increases significantly due to the transfer process.

[0064] In order to solve this problem, the semiconductor layer (200) included in the semiconductor substrate (10) according to the present invention can be deposited in a manner in which additional energy is applied by an additional energy supply unit to any one of CVD (Chemical Vapor Depostion), ALD (Atomic Layer Deposition), or sputtering methods such as CVD (Chemical Vapor Depostion), LPCVD (Low Pressure CVD), MPCVD (Microwave Plasma CVD), MOCVD (Metal Organic CVD), HDPCVD (High Density Plasma CVD), PECVD (Plasma Enhanced CVD), APCVD (Atomospheric Pressure CVD). The additional energy can be supplied by at least one of a plasma, a laser, and an LED light source. Hereinafter, CVD (Chemical Vapor Depostion), LPCVD (Low Pressure CVD), MPCVD (Microwave Plasma CVD), MOCVD (Metal Organic CVD), HDPCVD (High Density Plasma CVD), PECVD (Plasma Enhanced CVD), and APCVD (Atomospheric Pressure CVD) are collectively referred to as CVD.

[0065] Referring to FIG. 2, the semiconductor substrate (10) of the present invention can be manufactured through a step (S110) of growing a nitride thin film by sputtering and a step (S120) of supplying additional energy to the semiconductor layer (200).

[0066] In one embodiment, the step of growing a nitride thin film (S110) and the step of supplying additional energy to the semiconductor layer (200) (S120) can be performed simultaneously.

[0067] That is, the semiconductor layer (200) can be deposited by simultaneously supplying additional energy by an additional energy supply unit (2000) to any one of CVD (Chemical Vapor Depostion), ALD (Atomic Layer Deposition), or sputtering methods during the thin film growth process step.

[0068] The above additional energy may be at least one of a plasma, a laser, and an LED light source.

[0069] For example, the semiconductor substrate (10) of the present invention may be provided with a source ion or sputtering ion beam by any one of CVD (Chemical Vapor Depostion), ALD (Atomic Layer Deposition), or sputtering methods during the thin film growth process.

[0070] In this case, by supplying a portion of the energy required for deposition of the semiconductor layer (200) by an additional energy supply unit, the kinetic energy of the source ions or ion beam is increased, so that the semiconductor substrate (10) can lower the growth temperature of the thin film compared to the existing process.

[0071] The above substrate (100) may be at least one of an amorphous substrate and a polycrystalline substrate.

[0072] For example, the substrate (100) may be at least one of a glass substrate, a quartz substrate, a stainless steel substrate, and a polymer substrate.

[0073] According to the present invention, a glass substrate (100), a quartz substrate (100), a stainless steel substrate (100), and a polymer substrate (100) having a transformation temperature of 650 degrees (℃) or less can be used to deposit a gallium nitride thin film having a single crystal plane.

[0074] In one embodiment, the substrate (100) may be a glass substrate, and the semiconductor layer (200) may be a nitride semiconductor layer having a single crystal plane.

[0075] For example, on a glass substrate, a nitride semiconductor layer can be deposited by ion beam sputtering where the ion beam is used with the additional energy.

[0076] FIG. 3 is a drawing showing a semiconductor thin film deposition device for manufacturing a semiconductor substrate (10) of FIG. 1, and FIG. 4 is a drawing showing a semiconductor layer (200) being deposited in a thin film growth process step.

[0077] Referring to FIG. 3, the semiconductor substrate (10) of the present invention can be manufactured using a semiconductor thin film deposition device.

[0078] A semiconductor thin film deposition device may include a plurality of components for manufacturing a semiconductor substrate (10).

[0079] For example, a semiconductor thin film deposition device may include a thin film deposition unit (1000) and an energy supply unit (2000).

[0080] The thin film deposition unit (1000) can grow a nitride semiconductor layer having a single crystal plane on top of the substrate (100) by sputtering.

[0081] The energy supply unit (2000) can supply additional energy of at least one of plasma, laser, and LED light sources to the substrate (100).

[0082] For example, the energy supply unit (2000) can supply the additional energy to the substrate (100) at the same time as the thin film deposition unit (1000) grows the nitride semiconductor layer on top of the substrate (100).

[0083] As shown in Fig. 4, a semiconductor thin film deposition device can deposit a semiconductor layer (200) on a substrate (100) using a thin film deposition unit (1000).

[0084] For example, while the thin film deposition unit (1000) grows a nitride semiconductor layer having a single crystal plane on the upper part of the substrate (100) by any one of CVD, ALD, or sputtering methods, the energy supply unit (2000) can supply the additional energy to the substrate (100).

[0085] The source or sputtering target used in the above CVD, ALD or sputtering may include gallium (Ga) or gallium nitride (GaN).

[0086] For example, the thin film deposition unit (1000) can grow a nitride semiconductor layer using at least one of gallium (Ga) and gallium nitride (GaN) as a CVD source, ALD source, or sputtering target.

[0087] The energy supply unit (2000) can supply plasma containing at least one of helium (He), neon (Ne), argon (Ar), krypton (Kr), xenon (Xe), radon (Rn), hydrogen (H2), oxygen (O2), nitrogen (N2), chlorine (Cl2), and ammonia (NH3) to the substrate (100).

[0088] In one embodiment, the semiconductor layer (200) may have a deposition temperature of 600 degrees (℃) or less in the thin film growth process step.

[0089] For example, the semiconductor layer (200) can be deposited at a temperature of 600 degrees (℃) or less at a rate of 300 nm per hour by the additional energy supply.

[0090] Figure 5 is a conceptual diagram showing an example of a thin film growth process step.

[0091] As shown in Fig. 5, the semiconductor thin film deposition device can provide part of the energy required for deposition of the semiconductor layer (200) as additional energy (e.g., plasma energy, laser energy, and light energy of an LED) rather than thermal energy.

[0092] That is, the semiconductor thin film deposition device can improve the mobility of atoms and molecules that reach the semiconductor layer (200) on the substrate by supplying additional energy of at least one of plasma, laser, and LED light sources to the semiconductor layer (200).

[0093] For example, as shown in FIG. 5, a CVD source, ALD source, or sputtering target output from a thin film deposition unit (1000) can be deposited on a semiconductor layer (200) by absorbing kinetic energy by additional energy output from an energy supply unit (2000) instead of thermal energy.

[0094] In this way, when the surface mobility of the gallium and nitrogen particles being grown increases due to the increase in kinetic energy by additional energy, the energy required for thin film crystal growth is relatively reduced, so the temperature of the substrate (100) can be maintained low.

[0095] Therefore, the semiconductor thin film deposition device minimizes the thermal energy applied to the substrate (100), thereby lowering the thin film growth temperature of the semiconductor substrate (10) compared to the existing process.

[0096] In addition, since the semiconductor substrate (10) grows a nitride semiconductor thin film having a single crystal plane from the thin film growth stage using CVD, ALD or sputtering, the production process of the semiconductor substrate (10) can be simplified and the manufacturing cost of the semiconductor substrate (10) can be reduced.

[0097] FIG. 6 is a drawing showing an example in which the semiconductor substrate (10) of FIG. 1 is manufactured directly on a display backplane (20) without a transfer process.

[0098] In Fig. 6, the substrate (100) is a glass substrate, and the semiconductor layer (200) is a nitride semiconductor layer having a single crystal plane.

[0099] Referring to FIG. 6, the semiconductor substrate (10) can be manufactured directly on the backplane (20).

[0100] Specifically, the semiconductor substrate (10) may be provided with additional energy by plasma, laser or LED during the nitride thin film growth process, so that part of the energy required for deposition of the semiconductor layer (200) may be provided from the kinetic energy of the additional energy.

[0101] Therefore, the nitride semiconductor layer (200a) can be deposited on a glass substrate (100a) having a transformation temperature of 650 degrees (℃) or less.

[0102] As shown in Fig. 6, when the nitride semiconductor layer (200a) is directly deposited on the glass substrate (100a), unlike when the nitride semiconductor layer (200a) is deposited on a sapphire substrate, the semiconductor substrate (10) can be manufactured directly on the backplane (20).

[0103] Therefore, in the case of the method for manufacturing a semiconductor substrate (10) of the present invention, the process of manufacturing a light-emitting element chip and the transfer process of the light-emitting element can be omitted in the micro LED display production process.

[0104] Therefore, when the present invention is applied, the production cost according to the light-emitting element chip manufacturing and transfer process is reduced, so that the manufacturing cost of large displays including micro LEDs, such as large-area 4K Micro-LED TVs, can be drastically reduced.

[0105] Fig. 7 is a cross-sectional view of a semiconductor substrate (10) to which an intermediate layer (300) has been added, and Fig. 8 is a flowchart showing a method for manufacturing the semiconductor substrate (10) of Fig. 7.

[0106] Referring to FIG. 7, the semiconductor substrate (10) may further include an intermediate layer (300) disposed between the substrate (100) and the semiconductor layer (200) and composed of at least one of aluminum nitride and zinc oxide.

[0107] As shown in FIG. 8, the semiconductor substrate (10) of the present invention can be manufactured through a step (S210) of forming an intermediate layer (300) on a substrate (100), a step (S220) of growing a nitride thin film using any one of CVD, ALD, or sputtering methods, and a step (S230) of supplying additional energy to the semiconductor layer (200).

[0108] That is, the semiconductor substrate (10) can be manufactured in a process sequence in which an intermediate layer (300) is deposited on the upper portion of the substrate (100), and then a nitride semiconductor layer is deposited on the upper portion of the intermediate layer (300).

[0109] The substrate (100) may be an amorphous substrate or a polycrystalline substrate. For example, the substrate (100) may be at least one of a glass substrate, a quartz substrate, a stainless steel substrate, and a polymer substrate.

[0110] The intermediate layer (300) can be placed between the substrate (100) and the semiconductor layer (200).

[0111] The intermediate layer (300) may be a layer for facilitating deposition of the semiconductor layer (200).

[0112] For example, the intermediate layer (300) may be composed of aluminum nitride or zinc oxide, etc., which help the nitride semiconductor layer to have a single crystal plane.

[0113] The above semiconductor layer (200) can be deposited on top of the intermediate layer (300). The semiconductor layer (200) can be a nitride semiconductor layer having a single crystal plane.

[0114] The semiconductor layer (200) can be deposited by ion beam sputtering in which additional energy is supplied by an additional energy supply unit (2000) to irradiate the substrate (100) with an ion beam during the thin film growth process step.

[0115] For example, the step of growing a nitride thin film (S220) and the step of supplying additional energy to the semiconductor layer (200) (S230) can be performed simultaneously.

[0116] In one embodiment, at least one of helium (He), neon (Ne), argon (Ar), krypton (Kr), xenon (Xe), radon (Rn), hydrogen (H2), oxygen (O2), nitrogen (N2), chlorine (Cl2), and ammonia (NH3) may be used for the ion beam sputtering.

[0117] In one embodiment, the sputtering target used in the ion beam sputtering may include gallium (Ga) or gallium nitride (GaN).

[0118] When the semiconductor layer (200) is deposited, the surface mobility of the gallium and nitrogen particles being grown can be increased by irradiating the substrate (100) with an ion beam during the thin film growth stage.

[0119] When the surface mobility of gallium and nitrogen particles grown by ion beam irradiation increases, the energy required for thin film crystal growth is relatively reduced, so the temperature of the substrate (100) can be maintained low.

[0120] For example, ion beam sputtering can maintain the temperature of the substrate (100) below 600 degrees (℃) during the thin film growth stage.

[0121] Fig. 9 is an XRD analysis graph comparing the growth of a semiconductor layer (200) depending on the presence or absence of additional energy on a sapphire substrate, and Fig. 10 is an optical image showing a semiconductor layer (200) corresponding to the XRD analysis graph of Fig. 9.

[0122] Referring to Fig. 9, it can be seen that in the upper graph where the ion beam is not supplied with additional energy, the growth rates of GaN (101) and GaN (002) are lower than in the lower graph where the ion beam is supplied with additional energy.

[0123] Additionally, in the lower graph where the ion beam was supplied with additional energy, it can be confirmed that c-axis growth is clearly observed even in low-temperature thin film deposition at 670 degrees (℃) and 570 degrees (℃).

[0124] Additionally, as shown in Fig. 10, in the case of the optical image at the bottom where the ion beam was supplied with additional energy, it can be confirmed that a flat and uniform GaN thin film was formed compared to the optical image at the top where the ion beam was not supplied with additional energy.

[0125] Fig. 11 is an XRD analysis graph comparing the growth of a semiconductor layer (200) depending on the presence or absence of additional energy on a glass substrate, and Fig. 12 is an optical image showing a semiconductor layer (200) corresponding to the XRD analysis graph of Fig. 11.

[0126] Referring to FIG. 11, the semiconductor substrate (10) of the present invention can minimize the thin film growth temperature, so that the semiconductor layer (200) can be deposited on a glass substrate having a transformation temperature of 650 degrees (℃) or less.

[0127] In the lower graph where the ion beam was supplied with additional energy on the glass substrate, it can be seen that the directionality of GaN(002) increased compared to the upper graph where the ion beam was not supplied with additional energy.

[0128] As shown in Fig. 12, in the case of the optical image at the bottom where the ion beam was supplied with additional energy on the glass substrate, it can be confirmed that the surface is arranged homogeneously compared to the optical image at the top where the ion beam was not supplied with additional energy.

[0129] That is, when an ion beam is supplied with additional energy onto a glass substrate, it can be seen that the kinetic energy of the ions promotes diffusion of surface atoms, so that the thin film surface of the semiconductor layer (200) becomes homogeneous.

[0130] Figure 13 is a graph comparing a semiconductor layer (200) of a conventional MOCVD method with a method of applying additional energy to a sputtering method of the present invention.

[0131] Referring to Figure 13, it can be seen that in the case of the conventional MOCVD method, thin film growth is achieved at 1030 degrees (℃), whereas in the case of the present invention, thin film growth is possible at a low temperature of 570 degrees (℃).

[0132] In this way, according to the present invention, since the temperature for thin film growth is lowered compared to the existing process, a glass substrate, a quartz substrate, a stainless steel substrate, and a polymer substrate having a deformation temperature of 650 degrees (℃) or lower can be used in the semiconductor layer (200) film formation process.

[0133] Meanwhile, the semiconductor substrate (10) of the present invention can be applied to various semiconductor-based applications.

[0134] For example, the semiconductor substrate (10) of the present invention can be applied to light-emitting diodes (LEDs), power semiconductor devices, thin film transistors, solar cells, etc.

[0135] In particular, when the semiconductor substrate (10) of the present invention is applied to a micro LED display, the production cost according to the light emitting element chip manufacturing and transfer process is reduced, so the manufacturing cost of a large display including a micro LED, such as a large-area 4K Micro-LED TV, can be drastically reduced.

[0136] FIG. 14 is a drawing illustrating plasma-assisted sputtering by a deposition device (1400) according to one embodiment.

[0137] Inside the vacuum chamber, Ar (argon) gas is injected by a deposition device (1400), and a plasma state is generated using RF power (RF power supply) or DC power (DC power supply). Metal atoms generated from the target (Ga) are emitted by collision with ionized argon (Ar), and these emitted metal atoms are deposited on the substrate located above, thereby forming a thin film.

[0138] Additionally, the deposition equipment (1400) controls the voltage of the substrate by applying a pulsed DC bias (-) to the substrate, thereby allowing ions within the plasma to effectively reach the substrate. This method allows direct ion collisions with the substrate, forming a highly adhesive thin film. Furthermore, the ion energy can be controlled, making it possible to adjust the properties of the thin film.

[0139] Specifically, the deposition equipment (1400) is equipment that performs a plasma deposition process and includes a substrate, a plasma generation unit, and a pulse voltage application unit.

[0140] The deposition equipment (1400) performs the function of depositing a specific material on a substrate (1410) through a plasma deposition process, and may be configured to apply a negative voltage to the substrate (1410) in a pulse form during the deposition process to irradiate plasma positive ions onto the substrate (1410). The deposition equipment (1400) includes a function that can control the irradiation interval (frequency) and energy of plasma positive ions onto the substrate surface.

[0141] The substrate (1410) serves to support a material to be deposited within a deposition device (1400) that performs a plasma deposition process. The substrate (1410) is positioned so that plasma ions within the deposition device can be irradiated onto the substrate (1410). The substrate (1410) provides a surface on which plasma ions collide to form a thin film, and the deposition quality can be determined depending on changes in voltage and temperature of the substrate (1410) itself during the deposition process.

[0142] The substrate (1410) can be made of various materials and can be composed of at least one of a glass substrate, a quartz substrate, a stainless steel substrate, and a polymer substrate. A negative voltage is applied to the substrate (1410) during the plasma deposition process, and this voltage can accelerate plasma positive ions and induce them to collide with the surface of the substrate (1410).

[0143] The plasma generation unit can be controlled to generate plasma through injected gas and RF power (RF power supply) or DC power (DC power supply) in a region (1420) that generates plasma positive ions during the plasma deposition process. The plasma generation unit generates reactive particles in a plasma state and supplies positive ions to the substrate (1410).

[0144] The plasma generating unit includes a plasma formed by RF power supply or DC power supply, and emits plasma positive ions required for deposition. The plasma generating unit can inject at least one gas from among helium (He), neon (Ne), argon (Ar), krypton (Kr), xenon (Xe), radon (Rn), hydrogen (H2), oxygen (O2), nitrogen (N2), chlorine (Cl2), or ammonia (NH3).

[0145] The plasma generation unit controls the generation of high-energy ions when plasma is generated, and these ions can collide with the substrate (1410) to contribute to the deposition of materials. The pulse voltage application unit can operate in conjunction with a power supply unit and a vacuum pump to control the energy of the plasma positive ions.

[0146] The pulse voltage application unit (1430, Pulsed DC bias (-)) is a component that applies a negative voltage in the form of a pulse to the substrate (1410). The pulse voltage application unit (1430, Pulsed DC bias (-)) plays a role in controlling plasma positive ions so that they can effectively collide on the substrate (1410).

[0147] The pulse voltage application unit (1430, Pulsed DC bias (-)) can control the irradiation interval (frequency) and energy of plasma positive ions by supplying a negative voltage modulated at a constant frequency. The pulse voltage application unit (1430, Pulsed DC bias (-)) adjusts the negative voltage applied to the substrate (1410) so that plasma positive ions can be irradiated at a constant energy and amount. The pulse voltage application unit (1430, Pulsed DC bias (-)) can prevent excessive ion collisions that may occur in the plasma deposition process and play a role in improving the deposition quality.

[0148] An RF power supply (or DC power supply) supplies the RF power required to form plasma within the plasma generation unit. This power supply maintains the plasma state and enables the continuous generation of plasma ions. A vacuum pump facilitates plasma formation by lowering the pressure within the chamber where the deposition process is performed. The vacuum pump removes impurities from the chamber and regulates the pressure to maintain a uniform plasma state.

[0149] A Mass Flow Controller (MFC) is a device that regulates the amount of gas used for plasma formation and supplies it to the chamber. The MFC can precisely control the gas flow rate to optimize plasma performance. The gas supply unit (Gas) supplies the reactive gas required for plasma formation into the deposition chamber.

[0150] The deposition equipment (1400) illustrated in Fig. 14 is configured to irradiate plasma positive ions to a substrate (1410) in a manner that performs a deposition process using plasma. The deposition equipment (1400) illustrated in Fig. 14 can control the irradiation interval (frequency) and energy of plasma positive ions using a pulse voltage application unit (1430, Pulsed DC bias (-)).

[0151] The deposition equipment (1400) illustrated in FIG. 14 can be applied with a control system so that plasma positive ions can be uniformly irradiated onto the substrate (1410).

[0152] Fig. 14 illustrates a deposition apparatus (1400) that performs a plasma-assisted sputtering method, and includes components such as a substrate, a plasma generation unit, a pulse voltage application unit, an RF power or DC power supply unit, a vacuum pump, an MFC, and a gas supply unit. In the present embodiment, the deposition apparatus (1400) can irradiate plasma positive ions to the substrate (1410) by applying a negative voltage to the substrate (1410) in a pulse form, and can control the irradiation interval and energy of the plasma positive ions.

[0153] The sputtering deposition equipment (1400) uses plasma in a vacuum to deposit a target material on a substrate. It can operate when the substrate and target are arranged in a vertical direction (horizontal arrangement), or in certain applications, when the substrate is arranged vertically (left-right arrangement).

[0154] In the top-bottom (horizontal) configuration, where the target is positioned at the bottom and the substrate at the top, the deposited particles naturally adhere to the substrate in the direction of gravity, forming a uniform film. This method is generally suitable for large-area wafer and panel processes, and because the substrate moves less under the influence of gravity, it enables stable processing.

[0155] Meanwhile, the left-right (vertical) arrangement, where the substrate is positioned vertically and the target is positioned on the opposite side, can improve deposition uniformity by reducing the influence of gravity. Furthermore, by arranging wafers in multiple stages, simultaneous deposition can be performed on multiple substrates, and deposition control in specific directions is possible, making it suitable for processes such as nano-patterning structures.

[0156] FIG. 15 is a drawing illustrating plasma-assisted CVD using a deposition device (1500) according to one embodiment.

[0157] Inside the chamber, gas is injected through the deposition equipment (1500) and plasma is generated through RF power supply or DC power supply.

[0158] The deposition equipment (1500) has a shower head (cathode) located at the top to uniformly distribute plasma, and the active species in the plasma cause a chemical reaction on the substrate to form a thin film.

[0159] Additionally, the deposition equipment (1500) effectively allows particles to reach the substrate by controlling the substrate voltage by applying a pulsed DC bias (-). This method is primarily used to form insulating films (SiO2, Si3N4) and semiconductor thin films, and causes minimal damage because ions do not directly collide with the substrate. Furthermore, it can form a uniform thin film and deposit various materials.

[0160] Specifically, the deposition equipment (1500) is equipment for performing a plasma deposition process, and includes a substrate, a plasma generation unit (not shown), and a pulse voltage application unit. The deposition equipment (1500) may include a gas supply unit (Gas Flow), an RF matcher, an RF power (RF) or DC power supply, and a shower head, etc., to perform a deposition process using a plasma-assisted CVD method.

[0161] The deposition equipment (1500) performs the function of depositing a specific material on a substrate (1510) through a plasma deposition process, and may be configured to apply a negative voltage to the substrate (1510) in a pulse form during the deposition process to irradiate plasma positive ions onto the substrate (1510). The deposition equipment (1500) may include a function capable of controlling the irradiation interval (frequency) and energy of the plasma positive ions.

[0162] The substrate (1510) serves to support a material to be deposited within a deposition equipment (1500) that performs a plasma deposition process.

[0163] The substrate (1510) is placed at the bottom within the deposition equipment and is positioned so that plasma positive ions can be irradiated onto the substrate (1510). The substrate (1510) provides a surface on which plasma positive ions collide to form a thin film, and the deposition quality can be determined according to changes in voltage and temperature of the substrate (1510) itself during the deposition process. The substrate (1510) can be made of various materials and can be composed of at least one of a glass substrate, a quartz substrate, a stainless steel substrate, and a polymer substrate. A negative voltage is applied to the substrate (1510) during the plasma deposition process, and this voltage can accelerate plasma positive ions and induce them to collide with the surface of the substrate (1510).

[0164] The plasma generation unit generates reactive particles in a plasma state in a region (1520) that generates plasma cations during the deposition process, thereby supplying cations to the substrate (1510).

[0165] The plasma generation unit includes a plasma formed by an RF power supply or a DC power supply and an RF matcher, and emits plasma positive ions required for deposition. The plasma generation unit can supply at least one gas from among helium (He), neon (Ne), argon (Ar), krypton (Kr), xenon (Xe), radon (Rn), hydrogen (H2), oxygen (O2), nitrogen (N2), chlorine (Cl2), or ammonia (NH3).

[0166] The plasma generator generates high-energy ions when plasma is generated, and these ions can collide with the substrate (1510) to contribute to the deposition of materials. The plasma generator can operate in conjunction with an RF power or DC power supply and a gas supply to control the energy of the plasma positive ions.

[0167] The pulse voltage application unit (1530, Pulsed DC bias (-)) is a component that applies a negative voltage in the form of a pulse to the substrate (1510). The pulse voltage application unit (1530, Pulsed DC bias (-)) plays a role in controlling plasma positive ions so that they can effectively collide on the substrate (1510).

[0168] The pulse voltage application unit (1530, Pulsed DC bias (-)) can control the irradiation interval (frequency) and energy of plasma positive ions by supplying a negative voltage modulated at a constant frequency. The pulse voltage application unit (1530, Pulsed DC bias (-)) adjusts the negative voltage applied to the substrate (1510) so that plasma positive ions can be irradiated at a constant speed.

[0169] The gas supply unit (Gas Flow) functions to supply a constant amount of gas used in the plasma deposition process into the deposition chamber. The shower head (Shower Head) is positioned above the substrate (1510) and evenly distributes the supplied gas, ensuring a uniform deposition process. The gas supply unit (Gas Flow) can optimize the plasma reaction by maintaining a constant flow of reactive gas.

[0170] An RF or DC power supply is a device that supplies the RF or DC power required to form a plasma. The RF matcher stably regulates the power supplied from the power supply, ensuring a consistent plasma reaction. The RF matcher optimizes the plasma reaction and minimizes power loss during the deposition process.

[0171] The deposition equipment (1500) illustrated in Fig. 15 is a method of improving the deposition process by utilizing plasma in the chemical vapor deposition (CVD) method.

[0172] The deposition equipment (1500) illustrated in FIG. 15 may be configured to perform plasma treatment on a substrate (1510). The deposition equipment (1500) illustrated in FIG. 15 may be configured to apply a negative voltage to the substrate (1510) in a pulse form to irradiate plasma positive ions onto the substrate (1510). The deposition equipment (1500) illustrated in FIG. 15 may include a function capable of controlling the irradiation interval (frequency) and energy of the plasma positive ions.

[0173] In deposition equipment using CVD (Chemical Vapor Deposition) or ALD (Atomic Layer Deposition) methods, precursor gas must be supplied uniformly to the substrate surface to induce a deposition reaction, and accordingly, the arrangement of the substrate and raw material supply device (nozzle, showerhead) can be applied in various ways.

[0174] In the top-bottom arrangement (horizontal) method where the showerhead (nozzle section) is positioned above the substrate and the substrate is placed below, the precursor gas reaches the substrate directly and uniformly, so that the deposition thickness is maintained constant.

[0175] Additionally, it utilizes the influence of gravity to facilitate the downward discharge of unnecessary reaction byproducts, and is commonly used in wafer and large-area panel processes. However, there is a possibility that precursor gases supplied from above may remain on the surface after reacting with the substrate, necessitating the use of additional purge gas.

[0176] In the left-right arrangement (vertical) where the substrate and showerhead are arranged vertically, a uniform gas flow can be controlled without being affected by gravity.

[0177] This method is used in flow reactors and can increase reaction efficiency by minimizing gas diffusion distances. Furthermore, it allows for high-volume processing by arranging wafers in multiple layers, making it useful in batch ALD.

[0178] In the bottom-top arrangement (inverted arrangement), where the showerhead (nozzle section) is positioned at the bottom and the substrate is positioned at the top, gas can be supplied evenly to the substrate, and byproducts are naturally discharged downward by gravity. Furthermore, the accumulation of reaction byproducts within the chamber can be minimized.

[0179] FIG. 16 is a drawing (1600) showing a pulsed voltage variation applied to a substrate in a deposition device according to one embodiment.

[0180] Pulsed voltage variation is a graph showing the change in voltage (V) applied to a substrate over time (t).

[0181] Pulsed voltage modulation is a technique that regulates the irradiation of plasma positive ions onto a substrate in a consistent pattern by periodically applying a negative voltage to the substrate at specific time intervals.

[0182] Pulsed voltage modification has the characteristic of fluctuating in a form that repeats the ON (voltage applied) state and OFF (voltage removed) state, and this voltage fluctuation pattern allows for optimization of the uniformity of the plasma deposition process and the quality of the thin film.

[0183] In pulsed voltage modification, the ON state applies a negative voltage to the substrate, allowing plasma positive ions to be accelerated to the substrate.

[0184] In the ON state, plasma positive ions have high energy, which can accelerate the process of material deposition by colliding with the substrate surface.

[0185] In pulsed voltage modification, the OFF state temporarily stops the voltage application to the substrate, thereby suppressing excessive collisions of plasma positive ions on the substrate surface.

[0186] In the OFF state, the irradiation density of plasma positive ions is reduced, which can prevent damage to the substrate and promote uniform growth of the thin film. Pulsed voltage modification can include a function that can adjust the frequency and pulse width of the pulse voltage applied to the substrate so as to control the irradiation interval (frequency) and energy of plasma positive ions on the substrate.

[0187] In the Vt graph of pulsed voltage modification, voltage (V) is divided into positive voltage (+) and negative voltage (-). The voltage (V) of pulsed voltage modification can vary in the range of several to several tens of volts, and this voltage can determine the range of voltage applied to the substrate during the deposition process.

[0188] In pulsed voltage modification, the pulse width and interval can be adjusted according to the conditions of the plasma deposition process, becoming key factors in determining the irradiation frequency and energy of the plasma ions. Deposition equipment precisely controls the pulsed voltage modification applied to the substrate, enabling optimization of the thickness, uniformity, and crystal structure of the deposited thin film.

[0189] Pulsed voltage modification maintains a uniform density of plasma ions irradiated onto the substrate surface during the plasma deposition process. Pulsed voltage modification prevents excessive ion collisions with the substrate surface during the plasma deposition process, thereby improving the quality of the deposited thin film.

[0190] Pulsed voltage modification can minimize charge accumulation that can occur on the substrate and reduce substrate damage. Pulsed voltage modification ensures uniformity in the plasma deposition process while controlling the impact of plasma ions to achieve desired film properties.

[0191] Pulsed voltage modification can be applied to any one or more of the following methods: chemical vapor deposition (CVD), atomic layer deposition (ALD), or sputtering. Pulsed voltage modification can be utilized in processes such as thin film formation for semiconductor devices, nanostructure deposition, and surface modification for electronic devices. Pulsed voltage modification can be utilized as a key factor for the uniform growth of high-quality thin films and can enable grain control during the deposition process.

[0192]

[0193] The devices described above may be implemented as hardware components, software components, and / or a combination of hardware components and software components. For example, the devices and components described in the embodiments may be implemented using one or more general-purpose computers or special-purpose computers, such as, for example, a processor, a controller, an arithmetic logic unit (ALU), a digital signal processor, a microcomputer, a field programmable array (FPA), a programmable logic unit (PLU), a microprocessor, or any other device capable of executing instructions and responding to them. The processing device may execute an operating system (OS) and one or more software applications running on the operating system. The processing device may also access, store, manipulate, process, and generate data in response to the execution of the software. For ease of understanding, the processing device is sometimes described as being used alone; however, one of ordinary skill in the art will recognize that the processing device may include multiple processing elements and / or multiple types of processing elements. For example, a processing unit may include multiple processors, or a processor and a controller. Other processing configurations, such as parallel processors, are also possible.

[0194] Although the embodiments described above have been described with limited drawings, those skilled in the art will recognize that various modifications and variations can be made based on the above description. For example, appropriate results can still be achieved even if the described techniques are performed in a different order than described, and / or components of the described systems, structures, devices, circuits, etc. are combined or combined in a different manner than described, or are replaced or substituted with other components or equivalents.

[0195] Therefore, other implementations, other embodiments, and equivalents to the claims also fall within the scope of the claims described below.

Claims

1. Substrate; and Including a semiconductor layer disposed on the upper portion of the above substrate, The semiconductor layer is deposited by supplying additional energy to any one of CVD, ALD or sputtering methods during the thin film growth process step, The above additional energy is, characterized in that it is supplied by at least one of plasma, laser, and LED light sources. Semiconductor substrate.

2. In paragraph 1, The above substrate is a glass substrate, The above semiconductor layer is a nitride semiconductor layer having a single crystal plane, The semiconductor layer is characterized in that the kinetic energy of the source or target forming the semiconductor layer is increased by additional energy supplied by at least one of the plasma, laser and LED light sources, and is deposited. Semiconductor substrate.

3. In paragraph 2, The additional energy supply by the plasma, laser and LED is characterized in that at least one of helium (He), neon (Ne), argon (Ar), krypton (Kr), xenon (Xe), radon (Rn), hydrogen (H2), oxygen (O2), nitrogen (N2), chlorine (Cl2), and ammonia (NH3) is used. Semiconductor substrate.

4. In paragraph 2, The above-mentioned sputtering or sintering target, which has an increasing kinetic energy used for deposition of the semiconductor layer, is characterized in that it contains gallium (Ga) or gallium nitride (GaN), etc. Semiconductor substrate.

5. In paragraph 2, The above semiconductor layer, In the above thin film growth process step, the deposition temperature is characterized by being 600 degrees (℃) or less. Semiconductor substrate.

6. In paragraph 1, The above substrate is, characterized by at least one of an amorphous substrate and a polycrystalline substrate; Semiconductor substrate.

7. In paragraph 6, The above substrate is, characterized by at least one of a glass substrate, a quartz substrate, a stainless steel substrate, and a polymer substrate. Semiconductor substrate.

8. In paragraph 1, The above semiconductor layer, Characterized in that it is a silicon semiconductor layer having any one of a polycrystalline, microcrystalline, and nanocrystalline crystal structure. Semiconductor substrate.

9. In paragraph 1, The above semiconductor layer, It is characterized by being an oxide semiconductor layer based on InGaZnO. Semiconductor substrate.

10. In paragraph 1, The above semiconductor layer, Characterized by a CuInSe2-based 1-3-5 group compound semiconductor layer, Semiconductor substrate.

11. In paragraph 1, characterized in that it further comprises an intermediate layer disposed between the substrate and the semiconductor layer and composed of at least one of aluminum nitride and zinc oxide. Semiconductor substrate.

12. A thin film deposition section for growing a semiconductor layer having a single crystal plane on the upper part of a substrate by any one of the CVD, ALD, or sputtering methods; and An energy supply unit that supplies additional energy to the substrate by at least one of a plasma, a laser, and an LED light source, The above energy supply unit, The above thin film deposition unit is characterized in that it supplies the additional energy to the substrate while growing the semiconductor layer on top of the substrate. Semiconductor thin film deposition device.

13. In a deposition equipment that performs a plasma deposition process, A plasma generating unit that controls plasma generation on one side of the substrate through injected gas and RF power supply or DC power supply; and It includes a pulse voltage applying unit that controls the formation of a thin film on the substrate by applying a negative voltage to the substrate in the form of a pulse to irradiate plasma positive ions to the substrate, The pulse voltage applying unit is configured to control the irradiation interval and energy of the plasma positive ions. Deposition equipment.

14. In paragraph 13, The pulse voltage applying unit is characterized in that it supplies a negative voltage modulated at a certain frequency to the substrate. Deposition equipment.

15. In paragraph 13, The above plasma deposition process is characterized in that it includes at least one of CVD (Chemical Vapor Deposition), ALD (Atomic Layer Deposition), or sputtering. Deposition equipment.

16. In paragraph 13, The above plasma cations are helium (He), neon (Ne), argon (Ar), krypton (Kr), xenon (Xe), radon (Rn), hydrogen (H2), oxygen (O2), nitrogen (N2), and chlorine (C l2 ), or ammonia (NH3).

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