Resistor paste and chip resistor

Abstract

This resistor paste contains: metal particles including copper and nickel; insulating particles including at least one from among aluminum oxide, zirconium oxide, zinc oxide, and boron nitride; glass particles; silicon particles; and an organic vehicle.

Description

Resistor paste and chip resistors

[0001] The present disclosure relates generally to resistor pastes and chip resistors, and more particularly to resistor pastes containing metal particles and chip resistors having resistors made from the resistor paste.

[0002] Patent Document 1 describes a resistor paste containing metal particles containing copper and nickel, insulating particles containing at least one of alumina, zirconia, zinc oxide, and boron nitride, glass particles, and a metal silicide.

[0003] JP 2023-29199 A

[0004] In chip resistors using a resistor paste such as that described in Patent Document 1, if the proportion of metal silicide added to the resistor paste is increased to adjust the temperature coefficient of resistance (hereinafter referred to as "TCR"), there is a problem in that the variation in the resistance value and the variation in the TCR of the chip resistor increases.

[0005] A resistor paste according to one embodiment of the present disclosure includes metal particles including copper and nickel, insulating particles including at least one of aluminum oxide, zirconium oxide, zinc oxide, and boron nitride, glass particles, silicon particles, and an organic vehicle.

[0006] A chip resistor according to one aspect of the present disclosure comprises a substrate, a resistor, an upper surface electrode, a lower surface electrode, an end surface electrode, a protective film, and a plating layer. The substrate has a first surface and a second surface facing each other, and a third surface connecting the first surface and the second surface. The resistor is made of the resistor paste and is formed on the first surface. The upper surface electrode is formed on the first surface in contact with the resistor. The lower surface electrode is formed on the second surface. The end surface electrode is formed on the third surface and electrically connects the upper surface electrode and the lower surface electrode. The protective film covers at least a portion of the resistor. The plating layer covers at least a portion of the upper surface electrode, the lower surface electrode, and the end surface electrodes.

[0007] According to the resistor paste and chip resistor according to one aspect of the present disclosure, it is possible to reduce variations in resistance value and TCR.

[0008] Fig. 1 is a cross-sectional view of a chip resistor according to one aspect of the present embodiment. Fig. 2A is a diagram showing samples for evaluating the same chip resistor and a comparative chip resistor. Fig. 2B is a graph showing the standard deviation of the resistance values ​​of the same chip resistor and a comparative chip resistor. Fig. 3 is a graph showing the standard deviation of the temperature coefficient of resistance of the same chip resistor and a comparative chip resistor.

[0009] The resistor paste and chip resistor according to the embodiment will be described below with reference to the drawings. The figures referred to in the following embodiments are schematic diagrams, and the ratios of the sizes and thicknesses of the components in the figures do not necessarily reflect the actual dimensional ratios. Furthermore, the embodiment and modified examples described below are merely examples of the present disclosure, and the present disclosure is not limited to the embodiment and modified examples. Various modifications other than these embodiment and modified examples are possible depending on the design, etc., as long as they do not deviate from the technical concept of the present disclosure.

[0010] (1) Overview First, an overview of the resistor paste of this embodiment and the chip resistor 1 using the resistor paste of this embodiment will be described.

[0011] The resistor paste of this embodiment includes metal particles including copper and nickel, insulating particles including at least one of aluminum oxide, zirconium oxide, zinc oxide, and boron nitride, glass particles, silicon particles, and an organic vehicle.

[0012] The chip resistor 1 (see FIG. 1 ) of this embodiment includes a substrate 11, a resistor 13, an upper electrode 12, a lower electrode 15, an end electrode 16, a protective film 14, and a plating layer 17. The substrate 11 has a first surface 111 and a second surface 112 that face each other, and a third surface 113 that connects the first surface 111 and the second surface 112. The resistor 13 is formed on the first surface 111 using the resistor paste of this embodiment. The upper electrode 12 is formed on the first surface 111 in contact with the resistor 13. The lower electrode 15 is formed on the second surface 112. The end electrode 16 is formed on the third surface 113 and electrically connects the upper electrode 12 and the lower electrode 15. The protective film 14 covers at least a portion of the resistor 13. The plating layer 17 covers at least a portion of the upper electrode 12 , the lower electrode 15 and the end electrode 16 .

[0013] Here, the resistance value of the chip resistor 1 using the resistor paste is temperature dependent. In other words, the resistance value of the chip resistor 1 changes as the temperature changes. In this embodiment, the temperature coefficient of resistance (TCR) is defined as an index of the amount of change in resistance value associated with such temperature changes. TCR is the rate of increase in resistance value per unit temperature, and is expressed in units of [ppm / K]. When TCR is a positive value, the resistance value of the chip resistor 1 increases as the temperature increases. On the other hand, when TCR is a negative value, the resistance value of the chip resistor 1 decreases as the temperature increases.

[0014] According to the above configuration, when the resistor paste is fired, the silicon particles and the metal particles react to stably generate a metal silicide (nickel silicide in this embodiment). The generated metal silicide is one of the factors that determine the resistance value and TCR value of the chip resistor 1. This makes it possible to reduce the variation in the resistance value and TCR of the chip resistor 1.

[0015] (2) Configuration of Resistor Paste First, the configuration of the resistor paste of this embodiment will be described.

[0016] The resistor paste is a material for the resistor 13 (see FIG. 1) of the chip resistor 1 described below, and is used to form the resistor 13.

[0017] The resistor paste contains metal particles, insulating particles, glass particles, and a TCR adjuster.

[0018] The metal particles include copper (Cu) and nickel (Ni). More specifically, the metal particles are a combination of copper particles and nickel particles. The copper to nickel content ratio in the metal particles is, for example, 55:45. The metal particles are not limited to a combination of copper particles and nickel particles, but may also be alloy particles of copper and nickel. Furthermore, the metal particles may be a combination of copper particles and alloy particles, a combination of nickel particles and alloy particles, or a combination of copper particles, nickel particles and alloy particles. The metal particles form a conductive path in the resistor 13 (see FIG. 1) after firing. The metal particles may contain copper and nickel, and may further contain other metals.

[0019] The insulating particles are aluminum oxide (Al ２ O ３ ), zirconium oxide (ZrO ２ ), zinc oxide (ZnO), and boron nitride (BN). In the following description, aluminum oxide may be referred to as alumina, and zirconium oxide may be referred to as zirconia.

[0020] In this embodiment, the insulating particles include, for example, alumina, which reduce the content of metal particles in the fired resistor 13 (see FIG. 1 ) to increase the resistance value, and also suppress the melting and flow of glass particles (described later) to prevent disconnection of the conductive path.

[0021] The glass particles are added to the resistor paste. The glass particles are, for example, silicon oxide (SiO ２ In addition to silicon oxide, the glass particles contain aluminum oxide and boron oxide (B ２ O ３ The glass particles may further contain barium oxide (BaO) as an additive.

[0022] The glass particles enhance the wettability of the resistor paste to the substrate 11 (see FIG. 1) and improve adhesion. Furthermore, since the glass particles are an insulator, they also have the function of adjusting the resistance value.

[0023] The resistor paste according to this embodiment contains silicon particles as a TCR adjuster, and the content of the silicon particles in the resistor paste is preferably 0.1 wt % or more and 2.0 wt % or less.

[0024] The organic vehicle is, for example, composed of either or both of an organic binder and an organic solvent. In the resistor paste according to embodiment 1, the organic vehicle contains both an organic binder and an organic solvent. The organic binder is, for example, a cellulose-based resin, an acrylic-based resin, or the like. The organic solvent is, for example, terpineol, butyl carbitol acetate, or the like. The mass ratio of the organic vehicle, relative to the metal particles being 100, is, for example, preferably 5 to 200, more preferably 10 to 150, and even more preferably 20 to 100.

[0025] In the resistor paste according to the embodiment, the silicon particles and the metal particles (copper and nickel) react with each other by firing, and the composition of the copper and nickel in the metal particles changes due to this reaction, and nickel silicide (Ni ３１ Si １２) is generated. As a result, it is possible to increase the TCR of the chip resistor 1 including the resistor 13 (see FIG. 1) formed by firing. That is, it is possible to suppress the decrease in TCR that occurs with an increase in the amount of insulating particles added, and to bring the TCR closer to zero. Here, while metal silicides have been used as TCR adjusters in conventional technology, the use of silicon particles with a higher silicon purity than metal silicides as a TCR adjuster can further stabilize the nickel silicide production reaction. This reduces the variation in the amount of nickel silicide produced. By reducing the variation in the amount of nickel silicide produced, the variation in the TCR value can be reduced. Furthermore, by reducing the variation in the amount of nickel silicide produced, the composition ratio in the resistor 13 is stabilized. This reduces the variation in the resistance value of the chip resistor 1.

[0026] Here, the purity of the silicon particles is preferably 99.9% or more. Furthermore, the purity of the silicon particles is more preferably 99.99% or more. The higher the purity of the silicon particles in the resistor paste, the more stable the reaction of generating nickel silicide when the resistor paste is fired.

[0027] (3) Configuration of Chip Resistor Next, the configuration of the chip resistor 1 will be described with reference to FIG.

[0028] 1 , the chip resistor 1 includes a substrate 11, a plurality of (two in the illustrated example) upper electrodes 12, a resistor 13, a protective film 14, a plurality of (two in the illustrated example) lower electrodes 15, and a plurality of (two in the illustrated example) end electrodes 16. The chip resistor 1 also includes a plurality of (two in the illustrated example) first plating layers 17, a plurality of (two in the illustrated example) second plating layers 18, and a plurality of (two in the illustrated example) third plating layers 19. That is, the chip resistor 1 includes the substrate 11 and the resistor 13.

[0029] (3.1) Substrate The substrate 11 is, for example, a ceramic substrate. The material of the ceramic substrate is, for example, an alumina sintered body with an alumina content of 96% or more. The substrate 11 is formed in a rectangular shape when viewed from a first direction D1. As shown in FIG. 1 , the substrate 11 has a first main surface (upper surface) 111, a second main surface (lower surface) 112, and an outer peripheral surface 113. The first main surface 111 and the second main surface 112 face each other in the first direction D1. Each of the first main surface 111 and the second main surface 112 is a flat surface extending along a second direction D2 perpendicular to the first direction D1. The outer peripheral surface 113 includes four side surfaces extending along the first direction D1. The four side surfaces included in the outer peripheral surface 113 connect the first main surface 111 and the second main surface 112. The first direction D1 is a direction parallel to the thickness direction of the substrate 11 (the vertical direction in FIG. 1 ). The second direction D2 is a direction parallel to the longitudinal direction or width direction (short-side direction) of the substrate 11 (the left-right direction in FIG. 1).

[0030] (3.2) Top Electrode The multiple top electrodes 12 are formed on the first main surface 111 of the substrate 11 in contact with the resistor 13. In the example of Fig. 1 , the multiple top electrodes 12 are formed on both ends of the first main surface 111 of the substrate 11 in the second direction D2. The multiple top electrodes 12 are made of, for example, a Cu (copper) alloy. The multiple top electrodes 12 are formed, for example, by printing a thick film material and then firing it.

[0031] (3.3) Resistor The resistor 13 is formed on the first main surface 111 of the substrate 11 using resistor paste as its material. In the example of FIG. 1 , the resistor 13 is formed in the center of the first main surface 111 of the substrate 11. The material of the resistor 13 is, for example, the resistor paste described above. The resistor 13 is in contact with the plurality of upper surface electrodes 12 at both ends in the second direction D2 and is electrically connected to the plurality of upper surface electrodes 12. The resistor 13 has, for example, a rectangular shape when viewed in a plan view from the first direction D1, but can have any shape to match the desired resistance value of the resistor 13.

[0032] (3.4) Protective Film The protective film 14 is a film for protecting the resistor 13. The protective film 14 covers at least a portion of the resistor 13. In the example of FIG. 1 , the protective film 14 covers the entire area (whole) of the resistor 13. The material of the protective film 14 is, for example, epoxy resin. The protective film 14 is formed, for example, in a rectangular shape when viewed from a plane in the first direction D1, but can have any shape to match the shape of the resistor 13. The material of the protective film 14 is not limited to epoxy resin, and may be, for example, polyimide resin.

[0033] (3.5) Lower Electrodes A plurality of lower electrodes (rear electrodes) 15 are formed on the second main surface 112 of the substrate 11. In the example of FIG. 1 , the plurality of lower electrodes 15 are formed on both ends of the second main surface 112 of the substrate 11 in the second direction D2. The plurality of lower electrodes 15 correspond one-to-one to the plurality of upper electrodes 12. The material of the plurality of lower electrodes 15 is, for example, a Cu-based alloy. The plurality of lower electrodes 15 are formed, for example, by printing a thick film material and then firing it.

[0034] (3.6) End Electrodes A plurality of end electrodes 16 are formed on the outer peripheral surface 113 of the substrate 11. In the example of FIG. 1 , the plurality of end electrodes 16 are formed to cover both side surfaces in the second direction D2 of the four side surfaces included in the outer peripheral surface 113 of the substrate 11. The plurality of end electrodes 16 correspond one-to-one to the plurality of upper electrodes 12 and the plurality of lower electrodes 15. The material of the plurality of end electrodes 16 is, for example, a mixture of carbon powder, silver (Ag), and epoxy resin. Each of the plurality of end electrodes 16 contacts a corresponding upper electrode 12 among the plurality of upper electrodes 12 at a first end (upper end) in the first direction D1, and contacts a corresponding lower electrode 15 among the plurality of lower electrodes 15 at a second end (lower end). As a result, the plurality of upper electrodes 12 and the plurality of lower electrodes 15 are electrically connected via the plurality of end electrodes 16. In other words, the end electrodes 16 electrically connect the upper electrodes 12 and the lower electrodes 15 to each other.

[0035] (3.7) First Plating Layer The multiple first plating layers 17 are made of, for example, copper (Cu) plating. In the example of FIG. 1 , the multiple first plating layers 17 cover at least a portion (in this embodiment, the entirety) of the multiple upper electrodes 12, the multiple lower electrodes 15, and the multiple end electrodes 16 at both ends of the substrate 11 in the second direction D2. The multiple first plating layers 17 also contact the surface of the protective film 14. In the chip resistor 1, providing the first plating layers 17 makes it possible to adjust the resistance value of the chip resistor 1. Note that the first plating layers 17 may be omitted.

[0036] (3.8) Second Plating Layer The second plating layers 18 are made of, for example, nickel (Ni) plating. In the example of Fig. 1, the second plating layers 18 cover the first plating layers 17 at both ends of the substrate 11 in the second direction D2. The second plating layers 18 are also in contact with the surface of the protective film 14.

[0037] (3.9) Third Plating Layer The third plating layers 19 are made of, for example, tin (Sn) plating. In the example of Fig. 1, the third plating layers 19 cover the second plating layers 18 at both ends of the substrate 11 in the second direction D2. The third plating layers 19 are also in contact with the surface of the protective film 14.

[0038] (4) Method for Manufacturing Chip Resistor Next, a method for manufacturing the chip resistor 1 will be described.

[0039] The method for manufacturing the chip resistor 1 includes first to ninth steps.

[0040] In the first step, the substrate 11 is prepared. More specifically, in the first step, a substrate body is prepared, which will be the basis for each of the substrates 11 of the multiple chip resistors 1. The substrate body is, for example, a ceramic substrate. The material of the ceramic substrate that will become the substrate body is, for example, an alumina sintered body with an alumina content of 96% or more.

[0041] In the second step, a plurality of lower electrodes 15 for each of the plurality of chip resistors 1 are formed on the second main surface of the substrate body. More specifically, in the second step, a Cu-based alloy film is formed on the second main surface of the substrate body by, for example, printing a thick film material and then firing it, thereby forming a plurality of lower electrodes 15 for each of the plurality of chip resistors 1. The second main surface of the substrate body is the surface that becomes the second main surface 112 of the substrate 11 of each of the plurality of chip resistors 1.

[0042] In the third step, a plurality of top electrodes 12 are formed on the first main surface of the substrate body. The first main surface of the substrate body is the surface that becomes the first main surface 111 of the substrate 11 of each of the plurality of chip resistors 1. More specifically, in the third step, a Cu-based alloy film is formed on the first main surface of the substrate body by, for example, printing a thick film material and then firing it, thereby forming the plurality of top electrodes 12 on each of the plurality of chip resistors 1.

[0043] In the fourth step, the resistor 13 of each of the plurality of chip resistors 1 is formed. More specifically, in the fourth step, a resistor paste is printed on the first main surface of the substrate body, and then the resistor 13 is formed by firing. At this time, metal silicide (nickel silicide) is generated in the resistor 13 by a reaction between silicon particles and metal particles (copper and nickel). That is, in the chip resistor 1 according to this embodiment, the resistor 13 contains nickel silicide.

[0044] In the fifth step, the protective film 14 is formed on each of the plurality of chip resistors 1. More specifically, in the fifth step, epoxy resin is applied so as to cover the entire resistor 13, and then the epoxy resin is thermally cured to form the protective film 14. As shown in FIG. 1 , the protective film 14 also covers the contact portions between the plurality of upper surface electrodes 12 and the resistor 13.

[0045] In the sixth step, the plurality of chip resistors integrally formed in the first to fifth steps, excluding the end surface electrodes 16, the first plating layer 17, the second plating layer 18, and the third plating layer 19, are divided into a plurality of strip-shaped chip resistors excluding the end surface electrodes 16, the first plating layer 17, the second plating layer 18, and the third plating layer 19. More specifically, in the sixth step, for example, the plurality of integrally formed chip resistors are divided into a plurality of strip-shaped chip resistors by applying stress from rollers provided above and below.

[0046] In the seventh step, a plurality of end electrodes 16 are formed on the chip resistors divided into a plurality of strips. More specifically, in the seventh step, for example, an end electrode paste made from the above mixture is formed on a stainless steel roller, and the roller is then rotated to form a plurality of end electrodes 16 on each of the plurality of strip-shaped chip resistors. As a result, in each of the plurality of strip-shaped chip resistors, the plurality of top electrodes 12 and the plurality of bottom electrodes 15 are electrically connected via the plurality of end electrodes 16.

[0047] In an eighth step, the roller is rotated to separate the plurality of strip-shaped chip resistors into individual chip resistors.

[0048] In the ninth step, a first plating layer 17 to a third plating layer 19 are formed on each of the plurality of chip resistors. More specifically, in the ninth step, three plating layers, the first plating layer 17, the second plating layer 18, and the third plating layer 19, are formed on each of the plurality of chip resistors in this order.

[0049] The chip resistor 1 can be manufactured by the first to ninth steps described above.

[0050] (5) Characteristics of Chip Resistor Next, the characteristics of the chip resistor 1 (embodiment sample) using the resistor paste of this embodiment will be explained with reference to three comparative chip resistors (first comparative sample to third comparative sample).

[0051] The first to third comparative samples differ from the working sample in that the resistor paste contains a metal silicide as a TCR adjuster.

[0052] 2A is a diagram showing samples for evaluating the chip resistor according to the present embodiment and the chip resistor of the comparative example. As shown in FIG. 2A, the resistor paste used for the first comparative sample contains titanium silicide (TiSi ２ The resistor paste according to Comparative Example 2 contains tungsten silicide (WSi ２ The resistor paste according to Comparative Example 3 contains zirconium silicide (ZrSi ２ ) is included.

[0053] Below, the working sample and the first to third comparative samples are compared with each other with respect to the average value R_Ave, the standard deviation σ_R, the average value TCR_Ave, and the standard deviation σ_TCR.

[0054] The average value R_Ave is the average value of the resistance values ​​of the chip resistors for a predetermined number of samples (n = 57). The standard deviation σ_R is the standard deviation of the resistance values ​​of the chip resistors for a predetermined number of samples. The standard deviation σ_R is expressed as a ratio (percentage) to the average value R_Ave. The average value TCR_Ave is the average value of the TCRs of the chip resistors for a predetermined number of samples. The standard deviation σ_TCR is the standard deviation of the TCRs of the chip resistors for a predetermined number of samples. Here, the standard deviation σ_R is preferably equal to or less than a first reference value (3.3 [%] in this embodiment). Furthermore, the standard deviation σ_TCR is preferably equal to or less than a second reference value (3 [ppm / K] in this embodiment).

[0055] As shown in Fig. 2B, among the working sample and the first to third comparative samples, the standard deviations σ_R (3.0%]) of the working sample and the second comparative sample are equal to or less than the first reference value of 3.3%. Also, as shown in Fig. 3, among the working sample and the first to third comparative samples, only the standard deviation σ_TCR (2.5 ppm / K) of the working sample is equal to or less than the second reference value of 3 ppm / K.

[0056] In this way, the resistor paste according to this embodiment makes it possible to reduce the variations in the resistance value and the TCR of the chip resistor 1.

[0057] (6) Modifications The above embodiment is merely one of various embodiments of the present disclosure. This embodiment can be modified in various ways depending on the design, etc., as long as the object of the present disclosure can be achieved. Modifications of the above embodiment are listed below. The modifications described below can be applied in appropriate combinations.

[0058] In the above embodiment, the resistor paste contains alumina as insulating particles, but the resistor paste may contain at least one of alumina, zirconia, zinc oxide, and boron nitride as insulating particles.

[0059] In the above embodiment, each end electrode 16 has a U-shape when viewed in a direction orthogonal to both the first direction D1 and the second direction D2 (a direction perpendicular to the plane of the paper in FIG. 1 ). However, the shape of each end electrode 16 is not limited to a U-shape and may be, for example, an I-shape along the first direction D1. In this case, it is sufficient that the first end (upper end) of each end electrode 16 in the first direction D1 contacts the side surface of the top electrode 12, and the second end (lower end) of each end electrode 16 in the first direction D1 contacts the side surface of the bottom electrode 15. This allows electrical connection between the multiple top electrodes 12 and the multiple bottom electrodes 15 via the multiple end electrodes 16.

[0060] (7) Summary The present specification discloses the following aspects.

[0061] The resistor paste according to the first aspect includes metal particles including copper and nickel, insulating particles including at least one of aluminum oxide, zirconium oxide, zinc oxide, and boron nitride, glass particles, silicon particles, and an organic vehicle.

[0062] According to this aspect, the reaction of generating metal silicide when the resistor paste is fired can be stabilized, and the variation in the resistance value and the variation in the TCR of the chip resistor (1) using the resistor (13) fired from the resistor paste can be reduced.

[0063] In the resistor paste according to the second aspect, the purity of the silicon particles in the first aspect is 99.9% or more.

[0064] According to this embodiment, the reaction of producing metal silicide when the resistor paste is fired can be further stabilized.

[0065] In the resistor paste according to the third aspect, in the first or second aspect, the ratio of silicon particles is 0.1 wt % or more and 2.0 wt % or less.

[0066] According to this aspect, the reaction of generating metal silicide when the resistor paste is fired can be stabilized, and the variation in the resistance value and the variation in the TCR of the chip resistor (1) using the resistor (13) fired from the resistor paste can be reduced.

[0067] In the resistor paste according to a fourth aspect, in any one of the first to third aspects, the glass particles contain at least aluminum oxide and boron oxide.

[0068] According to this embodiment, the wettability of the resistor paste to the substrate (11) can be increased, thereby improving adhesion.

[0069] A chip resistor (1) according to a fifth aspect includes a substrate (11), a resistor (13), an upper electrode (12), a lower electrode (15), an end electrode (16), a protective film (14), and a plating layer (17). The substrate (11) has a first surface (111) and a second surface (112) that face each other, and a third surface (113) that connects the first surface (111) and the second surface (112). The resistor (13) is formed on the first surface (111) using the resistor paste according to any one of the first to fourth aspects. The upper electrode (12) is formed on the first surface (111) in contact with the resistor (13). The lower electrode (15) is formed on the second surface (112). The end surface electrodes (16) are formed on the third surface (113) and electrically connect the upper surface electrode (12) and the lower surface electrode (15). The protective film (14) covers at least a portion of the resistor (13). The plating layer (17) covers at least a portion of the upper surface electrode (12), the lower surface electrode (15), and the end surface electrodes (16).

[0070] According to this aspect, the reaction of generating metal silicide when the resistor paste is fired can be stabilized, and the variation in the resistance value and the variation in the TCR of the chip resistor (1) using the resistor (13) fired from the resistor paste can be reduced.

[0071] The configurations according to the second to fourth aspects are not essential for the resistor paste and can be omitted as appropriate.

[0072] REFERENCE SIGNS LIST 1 chip resistor 11 substrate 12 upper electrode 13 resistor element 14 protective film 15 lower electrode 16 end electrode 17 plating layer 111 first surface 112 second surface 113 third surface

Claims

1. A resistor paste comprising: metal particles including copper and nickel; insulating particles including at least one of aluminum oxide, zirconium oxide, zinc oxide, and boron nitride; glass particles; silicon particles; and an organic vehicle.

2. The resistor paste according to claim 1, wherein the purity of the silicon particles is 99.9% or more.

3. The resistor paste according to claim 1 or 2, wherein the ratio of the silicon particles is 0.1 wt% or more and 2.0 wt% or less.

4. The resistor paste according to claim 1 or 2, wherein the glass particles contain at least aluminum oxide and boron oxide.

5. A chip resistor comprising: a substrate having a first surface and a second surface opposing each other, and a third surface connecting the first surface and the second surface; a resistor formed on the first surface of the substrate using the resistor paste described in claim 1 or 2 as its material; an upper surface electrode formed on the first surface of the substrate in contact with the resistor; a lower surface electrode formed on the second surface of the substrate; end surface electrodes formed on the third surface of the substrate and electrically connecting the upper surface electrode and the lower surface electrode; a protective film covering at least a portion of the resistor; and a plating layer covering at least a portion of the upper surface electrode, the lower surface electrode and the end surface electrodes.

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