Pore array layer structure and preparation method for pore array layer structure

Abstract

Disclosed in the present application are a pore array layer structure and a preparation method for the pore array layer structure. The pore array layer structure (10) comprises a substrate (100), a first definition layer (200), a second definition layer (300) and a modified region (400), wherein the substrate (100) is provided with an electrode (110); the orthographic projection of the electrode (110) on the substrate (100) is located within or overlaps the orthographic projection of a first pore portion (210) of the first definition layer (200) on the substrate (100); the orthographic projection of the first pore portion (210) on the substrate (100) is located within the orthographic projection of a second pore portion (310) of the second definition layer (300) on the substrate (100); and the modified region (400) is hydrophilic, at least part of the electrode (110) being located within the modified region (400).

Description

Hole array layer structure and method for preparing hole array layer structure

[0001] CROSS-REFERENCE TO RELATED APPLICATIONS

[0002] This application claims priority to Chinese patent application No. 202410381631.6, filed on March 29, 2024, entitled “Hole Array Layer Structure and Method for Preparing Hole Array Layer Structure,” the entire contents of which are incorporated herein by reference. Technical Field

[0003] The present application belongs to the field of biological detection technology, and in particular to a hole array layer structure and a preparation method. Background Art

[0004] Nanopore detection technology, with its advantages of high throughput, high integration, parallelization, diversification, and automation, has broad applications in areas such as protein detection, gene sequencing, and nanoparticle characterization. For example, during gene sequencing, a nanopore is embedded in the membrane of a gene sequencing device. When a single-stranded deoxyribonucleic acid (DNA) molecule passes through the nanopore, the different bases interact differently with the nanopore, causing changes in the resistance of the nanopore and, in turn, changes in the current flowing through the nanopore. When a constant voltage is applied across the nanopore, the changes in the current flowing through the nanopore due to the different bases can be detected, reflecting the base arrangement of the DNA molecule passing through the nanopore.

[0005] Nanopore sequencing chips (hereinafter referred to as chips) include a pore array, and individual pores in the array are independent sequencing units. The number of thin films formed in the pore array on a single chip and the success rate of preparation affect the detection throughput. In a related chip preparation method, a thin film of amphiphilic molecules (phospholipids, block copolymers, etc.) is formed between two electrolyte solutions on the pore array layer structure of the chip through microfluidic technology. In order to improve the yield of the amphiphilic film, this method requires that the bottom microelectrode surface in the pore array be hydrophilic and the upper photoresist surface be lipophilic. However, the related technology cannot achieve local modification of the pore array, which in turn affects the yield of the amphiphilic film. Summary of the Invention

[0006] The embodiments of the present application provide a hole array layer structure and a method for preparing the hole array layer structure. One of the purposes of the present application is to achieve local modification of the hole array layer structure, thereby improving the yield of the amphiphilic molecular film.

[0007] An embodiment of the first aspect of the present application provides a hole array layer structure, including a substrate, a first defining layer, a second defining layer and a modified area, wherein an electrode is provided on one side of the substrate; the first defining layer is arranged on the substrate, the first defining layer and the electrode are located on the same side of the substrate, the first defining layer is provided with a first hole portion that penetrates the first defining layer along the thickness direction, the orthographic projection of the electrode on the substrate overlaps with the orthographic projection of the first hole portion on the substrate or is located within the orthographic projection of the first hole portion on the substrate, overlaps, or the orthographic projection of the second hole portion on the substrate is located within the orthographic projection of the first hole portion on the substrate; the second defining layer is arranged on the side of the first defining layer away from the substrate, the second defining layer is provided with a second hole portion that penetrates the second defining layer along the thickness direction, the orthographic projection of the first hole portion on the substrate is located within the orthographic projection of the second hole portion on the substrate; the modified area is rendered hydrophilic by ultraviolet light treatment, and at least part of the electrode belongs to the modified area.

[0008] According to any embodiment of the first aspect of the present application, the orthographic projection of the electrode on the substrate overlaps with the orthographic projection of the first hole portion on the substrate, and the orthographic projection of the electrode on the substrate overlaps with the orthographic projection of the modified region on the substrate or is located within the orthographic projection of the modified region on the substrate.

[0009] According to any one of the aforementioned first aspects of the present application, the orthographic projection of the electrode on the substrate is located within the orthographic projection of the first hole portion on the substrate; the surface of the substrate facing the first defining layer has a first overlapping area and a first exposed area, and in the thickness direction, the first overlapping area is the area where the surface of the substrate facing the first defining layer is covered by the first defining layer, and the first exposed area includes the area where the surface of the substrate facing the first defining layer is exposed by the first hole portion, and the orthographic projection of the first hole portion on the substrate overlaps with the orthographic projection of the first exposed area on the substrate; at least part of the first exposed area also belongs to the modified area.

[0010] According to any one of the aforementioned first aspects of the present application, a first tooth groove is further provided on the first limiting layer, extending from the side wall of the first hole portion in a direction away from the first hole portion, and a plurality of first tooth grooves are arranged along the circumference of the first hole portion, and have an opening connected to the first hole portion at the contour of the first hole portion, and the first exposed area further includes an area on the surface of the substrate facing the first limiting layer side exposed by the first tooth groove, the sum of the orthographic projection of the first hole portion on the substrate and the orthographic projection of the first tooth groove on the substrate overlaps with the orthographic projection of the first exposed area on the substrate; the orthographic projection of the first hole portion on the substrate overlaps with the orthographic projection of the modified area on the substrate, and the area on the surface of the substrate facing the first limiting layer side exposed by the first hole portion belongs to the modified area.

[0011] According to any one of the aforementioned first aspects of the present application, the orthographic projection of the first hole portion on the substrate is located within the orthographic projection of the modified region on the substrate, the orthographic projection of the first tooth groove on the substrate at least partially overlaps with the orthographic projection of the modified region on the substrate, and at least a portion of the surface of the substrate facing the first limiting layer side exposed by the first tooth groove belongs to the modified region.

[0012] According to an embodiment of any of the aforementioned first aspects of the present application, the surface of the first defining layer facing the second defining layer has a second overlapping area and a second exposed area, in the thickness direction, the second overlapping area is the area covered by the second defining layer, the second exposed area includes the area on the surface of the first defining layer facing the second defining layer that is exposed by the second hole portion, and the orthographic projection of the second hole portion on the substrate overlaps with the orthographic projection of the second exposed area on the substrate; the area on the surface of the substrate facing the first defining layer that is exposed by the first hole portion and at least part of the second exposed area both belong to modified areas.

[0013] According to the implementation scheme of any of the aforementioned first aspects of the present application, the second defining layer is further provided with a second tooth groove extending from the side wall of the second hole portion in a direction away from the second hole portion, and a plurality of second tooth grooves are arranged along the circumference of the second hole portion, and have an opening connected to the second hole portion at the contour of the second hole portion, and the second exposed area further includes an area where the surface of the first defining layer facing the second defining layer is exposed by the second tooth groove, and the sum of the orthographic projection of the second hole portion on the substrate and the orthographic projection of the second tooth groove on the substrate overlaps with the orthographic projection of the second exposed area on the substrate; the orthographic projection of the second tooth groove on the substrate does not overlap with the orthographic projection of the modified area on the substrate, and the area where the surface of the first defining layer facing the second defining layer is exposed by the second tooth groove does not belong to the modified area.

[0014] According to any embodiment of the first aspect of the present application, in the radial direction of the first hole portion, the distance between the contour of the modified region and the contour of the first hole portion is less than or equal to 1 / 3 of the distance between the contour of the second hole portion and the contour of the first hole portion.

[0015] An embodiment of the second aspect of the present application provides a method for preparing a hole array layer structure, comprising the following steps: providing a substrate, an electrode being provided on one side of the substrate; sequentially preparing a first defining layer and a second defining layer on one side of the substrate, the first defining layer being provided with a first hole portion penetrating the first defining layer along the thickness direction, the orthographic projection of the electrode on the substrate overlapping with the orthographic projection of the first hole portion on the substrate or being located within the orthographic projection of the first hole portion on the substrate, the second defining layer being provided with a second hole portion communicating with the first hole portion, the orthographic projection of the first hole portion on the substrate being located within, overlapping, or the orthographic projection of the second hole portion on the substrate being located within the orthographic projection of the first hole portion on the substrate; irradiating the hole array layer structure with ultraviolet light from the side of the second defining layer facing away from the substrate, so that at least part of the electrode forms a modified region, and the modified region is hydrophilic.

[0016] According to any embodiment of the second aspect of the present application, a first defining layer and a second defining layer are prepared in sequence on one side of a substrate, a first hole portion is provided on the first defining layer and passes through the first defining layer in a thickness direction, an orthographic projection of the electrode on the substrate overlaps with or is located within the orthographic projection of the first hole portion on the substrate, a second hole portion is provided on the second defining layer and is connected to the first hole portion, and the orthographic projection of the first hole portion on the substrate is located within the orthographic projection of the second hole portion on the substrate, the steps comprising: coating a first negative photoresist on one side of the substrate; covering a first mask on a side of the first negative photoresist facing away from the substrate, and exposing the first negative photoresist through the first mask; coating a second negative photoresist on a side of the first negative photoresist facing away from the substrate; covering a second mask on a side of the second negative photoresist facing away from the substrate, and exposing the second negative photoresist through the second mask; developing, etching and baking the first negative photoresist and the second negative photoresist, so that the first negative photoresist forms a first defining layer and the second negative photoresist forms a second defining layer.

[0017] According to an embodiment of any of the aforementioned second aspects of the present application, a first defining layer and a second defining layer are sequentially prepared on one side of a substrate, a first hole portion is provided on the first defining layer and passes through the first defining layer in a thickness direction, an orthographic projection of the electrode on the substrate overlaps with or is located within the orthographic projection of the first hole portion on the substrate, a second hole portion is provided on the second defining layer and is connected to the first hole portion, and the orthographic projection of the first hole portion on the substrate is located within the orthographic projection of the second hole portion on the substrate, the steps include: coating a negative photoresist on one side of the substrate; providing a mold, the mold comprising a base, a first protrusion and a second protrusion, the second protrusion being located on a side of the first protrusion facing away from the base; coating a negative photoresist on the mold, the negative photoresist covering the first protrusion and the second protrusion; directing the side of the mold coated with the negative photoresist toward the side of the substrate coated with the negative photoresist, so that the orthographic projection of the electrode on the substrate overlaps with or is located within the orthographic projection of the second protrusion on the substrate; squeezing the mold toward the substrate; curing the negative photoresist and removing from the mold, the negative photoresist forming the first defining layer and the second defining layer.

[0018] According to any embodiment of the second aspect of the present application, the step of allowing ultraviolet light to irradiate the hole array layer structure from the side of the second limiting layer facing away from the substrate so that at least part of the electrode forms a modified area, and the modified area is hydrophilic includes: setting a third mask on the side of the second limiting layer facing away from the substrate, and the third mask is provided with an opening; allowing ultraviolet light to pass through the opening from the side of the third mask facing away from the substrate and then irradiate the hole array layer structure.

[0019] According to any of the aforementioned embodiments of the second aspect of the present application, before the step of allowing ultraviolet light to pass through the opening from the side of the third mask away from the substrate and irradiate the hole array layer structure, it also includes: providing an ultraviolet lamp, which is located on the side of the third mask away from the substrate.

[0020] According to any implementation scheme of the second aspect of the present application, before the step of allowing ultraviolet light to pass through the opening from the side of the third mask away from the substrate and then irradiate the hole array layer structure, it also includes: providing an ultraviolet laser emitting system, the ultraviolet laser emitting system includes an emitter, an attenuation plate, a beam homogenizer, a reflector and an objective lens, the ultraviolet laser emitted by the emitter passes through the attenuation plate, the beam homogenizer, the reflector and the objective lens in sequence and then irradiates the hole array layer structure, and the third mask is located between the reflector and the objective lens.

[0021] According to any of the aforementioned embodiments of the second aspect of the present application, the wavelength of the ultraviolet laser emitted by the ultraviolet laser emitting system is 100-400nm, and the energy density of the ultraviolet laser is 10-1000mJ / cm 2 , the pulse number of the ultraviolet laser is 1-20, and the light frequency of the ultraviolet laser is 2-500Hz.

[0022] According to any embodiment of the second aspect of the present application, it also includes: allowing ultraviolet light to irradiate the hole array layer structure from the side of the second limiting layer facing away from the substrate, and also causing at least part of the first limiting layer to form a modified area, and the modified area is hydrophilic.

[0023] The pore array layer structure described in any embodiment of the first aspect of the present application or the pore array layer structure prepared by the preparation method of the pore array layer structure described in any embodiment of the second aspect of the present application can be used in preparing nanopore sequencing chips, preparing nanopore sensors or performing nanopore characterization analysis.

[0024] In the hole array layer structure and the preparation method of the hole array layer structure in the embodiments of the present application, the hole array layer structure includes a substrate, a first defining layer, a second defining layer and a modified area, and an electrode is provided on one side of the substrate; the first defining layer is arranged on the substrate, and the first defining layer and the electrode are located on the same side of the substrate, and the first defining layer is provided with a first hole portion that penetrates the first defining layer along the thickness direction, and the orthographic projection of the electrode on the substrate overlaps with the orthographic projection of the first hole portion on the substrate or is located within the orthographic projection of the first hole portion on the substrate; the second defining layer is arranged on the side of the first defining layer away from the substrate, and the second defining layer is provided with a second hole portion that penetrates the second defining layer along the thickness direction, and the orthographic projection of the first hole portion on the substrate is located within the orthographic projection of the second hole portion on the substrate; the modified area is rendered hydrophilic by ultraviolet light treatment, and at least part of the electrode belongs to the modified area. The modified area in the present application is treated with ultraviolet light. Ultraviolet light has the advantages of high single-photon energy, strong pulse energy and small thermal effect. It can destroy the chemical bonds on the surface of the modified area, so that the broken chemical bonds come into contact with oxygen in the air to form oxygen-containing hydrophilic groups, thereby making the modified area hydrophilic; by making at least part of the electrode belong to the modified area, the film formation yield can be significantly improved, and the electrode conductivity can be significantly improved, so that the electrode maintains good electrical properties during the sequencing process; by using ultraviolet light modification, only the irradiated modified area can be treated, while other non-irradiated areas still retain their original characteristics, and no chemicals contact the hole array layer structure during the modification process, and the hole array layer structure will not be contaminated. BRIEF DESCRIPTION OF THE DRAWINGS

[0025] In order to more clearly illustrate the technical solutions of the embodiments of the present application, the following is a brief introduction to the drawings required for use in the embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without any creative work.

[0026] FIG1 is a schematic diagram of a cross-sectional structure of a hole array layer structure during film formation;

[0027] FIG2 is a second schematic diagram of a cross-sectional structure of a hole array layer structure during film formation;

[0028] FIG3 is a third schematic diagram of a cross-sectional structure of a hole array layer structure during film formation;

[0029] FIG4 is a schematic diagram of a three-dimensional structure of a hole array layer structure provided by an embodiment of the present application;

[0030] FIG5 is a schematic diagram of a cross-sectional structure of a hole array layer structure provided by an embodiment of the present application;

[0031] FIG6 is a second schematic cross-sectional view of a hole array layer structure according to an embodiment of the present application;

[0032] FIG7 is a third schematic cross-sectional view of a hole array layer structure according to an embodiment of the present application;

[0033] FIG8 is a fourth schematic cross-sectional view of a hole array layer structure provided by an embodiment of the present application;

[0034] FIG9 is a fifth schematic cross-sectional view of a hole array layer structure provided by an embodiment of the present application;

[0035] FIG10 is a sixth schematic cross-sectional view of a hole array layer structure provided by an embodiment of the present application;

[0036] FIG11 is a schematic diagram of a top view of a hole array layer structure provided by one embodiment of the present application;

[0037] FIG12 is a second schematic diagram of a top view of a hole array layer structure provided by an embodiment of the present application;

[0038] FIG13 is a seventh schematic cross-sectional view of a hole array layer structure according to an embodiment of the present application;

[0039] FIG14 is an eighth schematic cross-sectional view of a hole array layer structure according to an embodiment of the present application;

[0040] FIG15 is a third schematic diagram of a top view of a hole array layer structure provided by an embodiment of the present application;

[0041] FIG16 is a schematic diagram of a process for preparing a hole array layer structure according to an embodiment of the present application;

[0042] FIG17 is a second flow chart of a method for preparing a hole array layer structure according to an embodiment of the present application;

[0043] FIG18 is a third flow chart of a method for preparing a hole array layer structure according to an embodiment of the present application;

[0044] FIG19 is a fourth flow chart of a method for preparing a hole array layer structure according to an embodiment of the present application;

[0045] FIG20 is a fifth flow chart of a method for preparing a hole array layer structure according to an embodiment of the present application:

[0046] FIG21 is a sixth flow chart of a method for preparing a hole array layer structure according to an embodiment of the present application;

[0047] FIG22 is a schematic structural diagram of an ultraviolet laser emission system and a hole array layer structure provided in one embodiment of the present application.

[0048] Figure numerals: 10, hole array layer structure; 11, oil-water lower interface; 12, oil-water upper interface; 13, amphiphilic molecular membrane; 20, third mask; 21, objective lens; 22, emitter; 23, attenuator; 24, beam homogenizer; 25, reflector; 100, substrate; 110, electrode; 120, first overlapping area; 130, first exposed area; 200, first limiting layer; 210, first hole portion; 220, first tooth groove; 230, second overlapping area; 240, second exposed area; 300, second limiting layer; 310, second hole portion; 320, second tooth groove; 400, modified area; z, thickness direction. DETAILED DESCRIPTION

[0049] The features and exemplary embodiments of various aspects of the present application will be described in detail below. In order to make the purpose, technical solutions and advantages of the present application clearer, the present application will be further described in detail below in conjunction with the accompanying drawings and specific embodiments. It should be understood that the specific embodiments described herein are only intended to explain the present application, rather than to limit the present application. For those skilled in the art, the present application can be implemented without the need for some of these specific details. The following description of the embodiments is merely to provide a better understanding of the present application by illustrating the examples of the present application.

[0050] It should be noted that, in this document, relational terms such as first and second, etc., are used only to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any actual relationship or order between these entities or operations. Moreover, the terms "comprises," "comprising," or any other variants thereof are intended to cover non-exclusive inclusion, so that a process, method, article, or device comprising a series of elements includes not only those elements, but also other elements not explicitly listed, or elements inherent to such process, method, article, or device. In the absence of further limitations, the elements defined by the phrase "comprising..." do not exclude the presence of other identical elements in the process, method, article, or device comprising the elements.

[0051] Please refer to Figures 1 to 3, Figure 1 is one of the schematic diagrams of the cross-sectional structure of a hole array layer structure during film formation; Figure 2 is a second schematic diagram of the cross-sectional structure of a hole array layer structure during film formation; Figure 3 is a third schematic diagram of the cross-sectional structure of a hole array layer structure during film formation.

[0052] Before sequencing, the pore array layer structure 10 needs to go through a process in which multiple polar solvents and non-polar solvents flow through the surface of the pore array layer structure 10. The purpose is to form an oil-water lower interface 11 and an oil-water upper interface 12 in the pore array layer structure 10. The oil-water lower interface 11 and the oil-water upper interface 12 in the appropriate position will spontaneously form an amphiphilic molecular membrane 13 (as shown in Figure 1). Among them, the process of forming the oil-water lower interface 11 affects the formation of the amphiphilic molecular membrane 13 in the pore array layer structure 10. If the position of the oil-water lower interface 11 is too high, the amphiphilic molecular membrane 13 will be unstable and easy to break after the film is formed (as shown in Figure 2). If the position of the oil-water lower interface 11 is too low, it is easy for the amphiphilic molecular membrane 13 not to be formed (as shown in Figure 3). Therefore, whether the position of the oil-water lower interface 11 is appropriate affects whether the amphiphilic molecular membrane 13 can be formed, and whether the position after formation is appropriate. The position of oil-water subsurface 11 depends on the degree to which the nonpolar solvent replaces the polar solvent, which in turn depends on the surface properties of the material comprising pore array layer structure 10. Specifically, the ratio of polar to nonpolar groups on the material's surface. Surface properties influence the relative affinity of the structural material surface for nonpolar and polar solvents. In short, to successfully form amphiphilic molecular membrane 13 and maintain it in the appropriate location, it is necessary to ensure that the surface of the material comprising pore array layer structure 10 maintains appropriate hydrophilic and lipophilic properties.

[0053] The applicant discovered that in related art, the material of the pore array layer structure includes photoresist, which can be an organic polymer such as trimethacrylate, epoxy resin, or polycarbonate. These materials have highly oleophilic surfaces and poorly hydrophilic surfaces. Failure to locally modify the pore array layer structure can affect the yield of amphiphilic film.

[0054] In response to the above-mentioned problems, the applicant proposes a hole array layer structure comprising a substrate, a first confining layer, a second confining layer, and a modified region. An electrode is provided on one side of the substrate. The first confining layer is disposed on the substrate, and the first confining layer and the electrode are located on the same side of the substrate. The first confining layer is provided with a first hole portion extending through the first confining layer along the thickness direction, and the orthographic projection of the electrode on the substrate overlaps with or is located within the orthographic projection of the first hole portion on the substrate. The second confining layer is disposed on the side of the first confining layer facing away from the substrate. The second confining layer is provided with a second hole portion extending through the second confining layer along the thickness direction, and the orthographic projection of the first hole portion on the substrate is located within, or may overlap, the orthographic projection of the second hole portion on the substrate being located within the orthographic projection of the first hole portion on the substrate. The modified region is rendered hydrophilic by ultraviolet light treatment, and at least a portion of the electrode is included in the modified region. When the orthographic projection of the first hole portion on the substrate is located within the orthographic projection of the second hole portion on the substrate, the surface of the first confining layer facing away from the substrate can also be locally modified.

[0055] The modified area in the hole array layer structure provided in the present application is treated with ultraviolet light. Ultraviolet light has the advantages of high single photon energy, strong pulse energy and small thermal effect. It can destroy the chemical bonds on the surface of the modified area, so that the broken chemical bonds come into contact with oxygen in the air to form oxygen-containing hydrophilic groups, thereby making the modified area hydrophilic; by making at least part of the electrode belong to the modified area, the film formation yield can be significantly improved, and the electrode conductivity can be significantly improved, so that the electrode maintains good electrical properties during the sequencing process; by using ultraviolet light modification, only the irradiated modified area can be treated, while other non-irradiated areas still retain their original characteristics, and no chemicals contact the hole array layer structure during the modification process, so the hole array layer structure will not be contaminated, and this method can also flexibly control the irradiation area to achieve precise local modification.

[0056] To better understand the present application, the hole array layer structure of the embodiment of the present application is described in detail below with reference to the accompanying drawings. It should be noted that the z direction in the accompanying drawings is the thickness direction z. In the accompanying drawings, for the convenience of drawing, the dimensions in the drawings are not necessarily proportional to the actual dimensions.

[0057] Please refer to Figures 4 to 6. Figure 4 is a schematic diagram of the three-dimensional structure of a hole array layer structure provided in one embodiment of the present application; Figure 5 is a schematic diagram of the cross-sectional structure of a hole array layer structure provided in one embodiment of the present application; and Figure 6 is a schematic diagram of the cross-sectional structure of a hole array layer structure provided in one embodiment of the present application. The modified regions in the figures are indicated by oblique hatching, but the dimensions of the oblique hatching in the thickness direction z do not limit the specific depth of the modified regions.

[0058] As shown in Figures 4 to 6, an embodiment of the first aspect of the present application provides a hole array layer structure 10, comprising a substrate 100, a first confining layer 200, a second confining layer 300, and a modified region 400. An electrode 110 is provided on one side of the substrate 100. The first confining layer 200 is disposed on the substrate 100, and the first confining layer 200 and the electrode 110 are located on the same side of the substrate 100. The first confining layer 200 is provided with a first hole portion 210 that penetrates the first confining layer 200 along the thickness direction z (the z direction in the figures). The orthographic projection of the electrode 110 on the substrate 100 overlaps with the orthographic projection of the first hole portion 210 on the substrate 100 or is located within the orthographic projection of the first hole portion 210 on the substrate 100. The second confining layer 300 is disposed on the side of the first confining layer 200 facing away from the substrate 100. A second hole 310 is provided in the second confining layer 300, extending through the second confining layer 300 along the thickness direction z. The orthographic projection of the first hole 210 on the substrate 100 is located within the orthographic projection of the second hole 310 on the substrate 100. Alternatively, the orthographic projections of the second hole 310 on the substrate 100 may overlap, or the orthographic projections of the second hole 310 on the substrate 100 may be located within the orthographic projection of the first hole 210 on the substrate 100. The modified region 400 is rendered hydrophilic by ultraviolet light treatment, and at least a portion of the electrode 110 is included in the modified region 400. When the orthographic projection of the first hole 210 on the substrate 100 is located within the orthographic projection of the second hole 310 on the substrate 100, local modification can also be performed on the surface of the first confining layer 200 facing away from the substrate 100.

[0059] Optionally, the materials of the substrate 100 , the first limiting layer 200 and the second limiting layer 300 include polymer photoresists such as trimethacrylate, epoxy resin, and polycarbonate, and the material of the electrode 110 can be selected from inert metals, specifically platinum, gold, and palladium.

[0060] Optionally, the ultraviolet light irradiates the hole array layer structure 10 from the side of the second defining layer 300 facing away from the substrate 100. Optionally, the optical path of the ultraviolet light is parallel to the thickness direction z.

[0061] Optionally, the orthographic projection of the modified region 400 on the substrate 100 is located within the orthographic projection of the electrode 110 on the substrate, and only a portion of the surface of the electrode 110 is formed into the modified region after the UV treatment. The orthographic projection of the electrode 110 on the substrate 100 overlaps with the orthographic projection of the first hole portion 210 on the substrate 100 (as shown in FIG5 ) or is located within the orthographic projection of the first hole portion on the substrate 100 (as shown in FIG6 ). The orthographic projection overlap means that the electrode 110 and the first hole portion 210 completely overlap in the thickness direction z.

[0062] In the hole array layer structure 10 provided in the embodiment of the present application, the modified area 400 is treated with ultraviolet light. Ultraviolet light has the advantages of high single photon energy, strong pulse energy, and small thermal effect. It can destroy the chemical bonds on the surface of the modified area 400, so that the broken chemical bonds come into contact with oxygen in the air to form oxygen-containing hydrophilic groups, thereby making the modified area 400 hydrophilic. Specifically, ultraviolet light irradiation can destroy chemical bonds such as CC (carbon-carbon), CN (carbon-nitrogen), and CH (carbon-hydrogen) on the surface of the modified area 400, and ultimately form hydrophilic groups such as -OH (hydroxyl) and -COOH (carboxyl). By making at least part of the electrode 110 belong to the modified area 400, the film yield can be significantly improved, and the conductivity of the electrode 110 can be significantly improved, so that the electrode 110 maintains good electrical properties during the sequencing process. By using ultraviolet light to modify the performance, only the irradiated modified area 400 can be processed, while other unirradiated areas still retain their original properties. In addition, no chemicals contact the hole array layer structure 10 during the modification process, and the hole array layer structure 10 will not be contaminated.

[0063] Please refer to Figures 7 and 8. Figure 7 is a third schematic diagram of the cross-sectional structure of the hole array layer structure provided in one embodiment of the present application; Figure 8 is a fourth schematic diagram of the cross-sectional structure of the hole array layer structure provided in one embodiment of the present application.

[0064] In some optional embodiments, the orthographic projection of the electrode 110 on the substrate 100 overlaps with the orthographic projection of the first hole portion 210 on the substrate 100, and the orthographic projection of the electrode 110 on the substrate 100 overlaps with the orthographic projection of the modified region 400 on the substrate 100 or is located within the orthographic projection of the modified region 400 on the substrate 100.

[0065] Optionally, as shown in Figure 7, when the exposed area of ​​the first hole portion 210 overlaps with the electrode 110, and the orthographic projection of the electrode 110 on the substrate 100 overlaps with the orthographic projection of the modified region 400 on the substrate 100, the ultraviolet light only irradiates the entire surface of the electrode 110 and does not irradiate the substrate 100. The ultraviolet light irradiation range overlaps with the orthographic projection of the first hole portion 210 on the substrate 100.

[0066] Optionally, as shown in Figure 8, when the area exposed by the first hole portion 210 overlaps with the electrode 110, and the orthographic projection of the electrode 110 on the substrate 100 is located within the orthographic projection of the modified area 400 on the substrate 100, the range of ultraviolet light irradiation is greater than the orthographic projection of the electrode 110 on the substrate 100, and at least part of the surface of the first limiting layer 200 exposed by the second hole portion 310 on the side facing away from the substrate 100 is also irradiated by ultraviolet light and modified.

[0067] In the hole array layer structure 10 provided in the embodiment of the present application, by overlapping the orthographic projection of the electrode 110 on the substrate 100 with the orthographic projection of the first hole portion 210 on the substrate 100, the coverage of the electrode 110 is increased, thereby improving sequencing accuracy. By overlapping the orthographic projection of the electrode 110 on the substrate 100 with the orthographic projection of the modified region 400 on the substrate 100 or being located within the orthographic projection of the modified region 400 on the substrate 100, the entire area exposed by the first hole portion 210 is modified by ultraviolet light, further improving the film yield rate and significantly improving the conductivity of the electrode 110, so that the electrode 110 maintains good electrical performance during the sequencing process.

[0068] Please refer to FIG9 , which is a fifth schematic cross-sectional view of a hole array layer structure provided in one embodiment of the present application.

[0069] In some optional embodiments, the orthographic projection of the electrode 110 on the substrate 100 is located within the orthographic projection of the first hole 210 on the substrate 100. The surface of the substrate 100 facing the first confining layer 200 includes a first overlapping region 120 and a first exposed region 130. In the thickness direction z, the first overlapping region 120 is the area of ​​the substrate 100 facing the first confining layer 200 that is covered by the first confining layer 200, and the first exposed region 130 is the area of ​​the substrate 100 facing the first confining layer 200 that is exposed by the first hole 210. The orthographic projection of the first hole 210 on the substrate 100 overlaps with the orthographic projection of the first exposed region 130 on the substrate 100. At least a portion of the first exposed region 130 also constitutes the modified region 400.

[0070] In the hole array layer structure 10 provided in the embodiment of the present application, by making the orthographic projection of the electrode 110 on the substrate 100 located within the orthographic projection of the first hole portion 210 on the substrate 100, in addition to the electrode 110, part of the first exposed area 130 also belongs to the modified area 400, thereby further improving the film formation yield.

[0071] Please refer to FIG. 4 and FIG. 10 . FIG. 10 is a sixth schematic cross-sectional view of a hole array layer structure according to an embodiment of the present application.

[0072] As shown in Figures 4 and 10, in some optional embodiments, the first defining layer 200 further comprises a first groove 220 extending from the sidewall of the first hole 210 in a direction away from the first hole 210. Multiple first grooves 220 are provided along the circumference of the first hole 210 and each has an opening communicating with the first hole 210 at the contour of the first hole 210. The first exposed region 130 further includes the area of ​​the substrate 100 surface facing the first defining layer 200 exposed by the first groove 220. The sum of the orthographic projections of the first hole 210 and the first groove 220 on the substrate 100 overlaps with the orthographic projection of the first exposed region 130 on the substrate 100. The orthographic projection of the first hole 210 on the substrate 100 overlaps with the orthographic projection of the modified region 400 on the substrate 100. The area of ​​the substrate 100 surface facing the first defining layer 200 exposed by the first groove 210 belongs to the modified region 400.

[0073] Among them, the first exposed area 130 includes the area on the surface of the substrate 100 facing the first limiting layer 200 that is exposed by the first tooth groove 220, and the first overlapping area 120 does not include the area on the surface of the substrate 100 facing the first limiting layer 200 that is exposed by the first tooth groove 220, and the orthographic projection of the first exposed area 130 on the substrate 100 and the orthographic projection of the first overlapping area 120 on the substrate 100 do not overlap.

[0074] Optionally, the distance that the first tooth groove 220 extends in the thickness direction z is equal to the depth of the first hole portion 210 .

[0075] Optionally, the width of each portion of the first tooth groove 220 from the opening to the groove bottom can be uniformly set, for example, the width of each portion of the first tooth groove 220 from the opening to the groove bottom is equal or increases or decreases proportionally along a linear relationship.

[0076] Optionally, the width of the first tooth groove 220 from the opening to the groove bottom may also be unevenly set, such as the width of the first tooth groove 220 first increases and then decreases, or first decreases and then increases, or the increase and decrease occur randomly.

[0077] Optionally, the plurality of first tooth grooves 220 arranged along the sidewall of the first hole portion may be the same or different. For example, the width from the opening to the groove bottom may be the same, partially the same, or different.

[0078] Optionally, the first tooth grooves 220 are evenly distributed on the sidewall of the first hole portion 210, and the circumferential distance between adjacent first tooth grooves 220 is the same. In another embodiment, the first tooth grooves 220 are unevenly distributed on the sidewall of the first hole portion 210, and the first tooth grooves 220 can be arranged in different directions with different densities according to actual needs.

[0079] In the hole array layer structure 10 provided in the embodiment of the present application, through the setting of the first tooth groove 220, when the first hole portion 210 accommodates a non-polar medium, the non-polar medium will be stored in the first tooth groove 220 through capillary action. Secondly, the amphiphilic molecular film formed in the first hole portion 210 can also produce a tendency to aggregate through the acute angle or right-angle structure on the first tooth groove 220, so that the molecular film can be relatively stably pulled in the first hole portion 210, which has a more stable supporting effect on the molecular film, effectively improving the film formation rate and stability after film formation.

[0080] Please refer to FIG. 11 , which is one of the schematic top view structural diagrams of the hole array layer structure provided in one embodiment of the present application.

[0081] As shown in Figure 11, in some optional embodiments, the orthographic projection of the first hole portion 210 on the substrate 100 is located within the orthographic projection of the modified region 400 on the substrate 100, the orthographic projection of the first tooth groove 220 on the substrate 100 at least partially overlaps with the orthographic projection of the modified region 400 on the substrate 100, and at least a portion of the surface of the substrate 100 facing the first limiting layer 200 exposed by the first tooth groove 220 belongs to the modified region 400.

[0082] Optionally, the orthographic projection shape of the first hole portion 210 on the substrate 100 may be a circle, and the outer contour shape of the orthographic projection of the first tooth groove 220 on the substrate 100 may be a circle, a regular polygon, or a polygon-like shape with rounded corners.

[0083] Optionally, the orthographic projection of the modified region 400 on the substrate 100 overlaps with the orthographic projection of the first exposed region 130 on the substrate 100 , and the surface of the first limiting layer 200 facing away from the substrate 100 does not belong to the modified region.

[0084] In the hole array layer structure 10 provided in the embodiment of the present application, the modified region 400 is covered to the exposed portion of the first exposed region 130 of the first tooth groove 220, thereby increasing the range of the modified region 400 and further improving the film formation yield.

[0085] Please refer to Figures 12 and 13. Figure 12 is a second schematic diagram of the top view of the hole array layer structure provided in one embodiment of the present application; Figure 13 is a seventh schematic diagram of the cross-sectional structure of the hole array layer structure provided in one embodiment of the present application.

[0086] As shown in Figures 12 and 13, in some optional embodiments, the surface of the first defining layer 200 facing the second defining layer 300 has a second overlapping region 230 and a second exposed region 240. In the thickness direction z, the second overlapping region 230 is the area covered by the second defining layer 300, and the second exposed region 240 includes the area of ​​the surface of the first defining layer 200 facing the second defining layer 300 exposed by the second hole portion 310. The orthographic projection of the second hole portion 310 on the substrate 100 overlaps with the orthographic projection of the second exposed region 240 on the substrate 100. The area of ​​the surface of the substrate 100 facing the first defining layer 200 exposed by the first hole portion 210 and at least a portion of the second exposed region 240 both constitute the modified region 400.

[0087] Optionally, in the radial direction of the first hole portion 210, the distance between the contour of the modified region 400 and the contour of the first hole portion 210 (dimension L1 in FIG12 ) is less than or equal to 1 / 3 of the distance between the contour of the second hole portion 310 and the contour of the first hole portion 210 (L2 in FIG12 ). In the radial direction of the first hole portion 210, the extent of the modified region 400 covering the area of ​​the surface of the first defining layer 200 facing away from the substrate 100 exposed by the second hole portion 310 does not exceed 1 / 3 of the entire area of ​​the first defining layer 200 exposed by the second hole portion 310.

[0088] In the hole array layer structure 10 provided in the embodiment of the present application, at least a portion of the second exposed region 240 is also included in the modified region 400. This prevents the oil-water subsurface from continuing to penetrate downward from the interface between the first limiting layer 200 and the second limiting layer 300 during film formation, thereby preventing the formation of an amphiphilic molecular film. By ensuring that the distance between the contour of the modified region 400 and the contour of the first hole portion 210 is less than or equal to 1 / 3 of the distance between the contour of the second hole portion 310 and the contour of the first hole portion 210, the oleophilic area in the area exposed by the second hole portion 310 on the side of the first limiting layer 200 facing away from the substrate 100 is greater than the hydrophilic area. This prevents the oil-water subsurface from being too high during film formation, resulting in instability and susceptibility to rupture of the amphiphilic molecular film after formation, thereby further improving the success rate of film formation.

[0089] Please refer to Figures 4, 12, 14 and 15. Figure 14 is the eighth schematic diagram of the cross-sectional structure of the hole array layer structure provided by an embodiment of the present application; Figure 15 is the third schematic diagram of the top view of the hole array layer structure provided by an embodiment of the present application.

[0090] In some optional embodiments, the second defining layer 300 is further provided with a second groove 320 extending from the sidewall of the second hole portion 310 in a direction away from the second hole portion 310. Multiple second grooves 320 are provided along the circumference of the second hole portion 310 and have openings communicating with the second hole portion 310 at the contour of the second hole portion 310. The second exposed region 240 further includes an area of ​​the surface of the first defining layer 200 facing the second defining layer 300 that is exposed by the second groove 320. The sum of the orthographic projections of the second hole portion 310 and the second groove 320 on the substrate 100 overlaps with the orthographic projection of the second exposed region 240 on the substrate 100. The orthographic projection of the second groove 320 on the substrate 100 does not overlap with the orthographic projection of the modified region 400 on the substrate 100. The area of ​​the surface of the first defining layer 200 facing the second defining layer 300 that is exposed by the second groove 320 does not constitute the modified region 400.

[0091] As shown in Figure 14, the second exposed area 240 includes the area where the surface of the first limiting layer 200 facing the second limiting layer 300 is exposed by the second tooth groove 320, and the second overlapping area 230 does not include the area where the surface of the first limiting layer 200 facing the second limiting layer 300 is exposed by the second tooth groove 320, and the orthographic projection of the second exposed area 240 on the substrate 100 and the orthographic projection of the second overlapping area 230 on the substrate 100 do not overlap.

[0092] Optionally, the orthographic projection shape of the second hole portion 310 on the substrate 100 may be a circle, and the outer contour shape of the orthographic projection of the second tooth groove 320 on the substrate 100 may be a circle, a regular polygon, or a polygon-like shape with rounded corners.

[0093] Optionally, as shown in FIG12 , the orthographic projection shape of the electrode 110 on the substrate 100, the orthographic projection shape of the first hole portion 210 on the substrate 100, the orthographic projection shape of the outer contour of the first tooth groove 220 on the substrate 100, the orthographic projection shape of the second hole portion 310 on the substrate 100, the orthographic projection shape of the outer contour of the second tooth groove 320 on the substrate 100, and the orthographic projection shape of the modified region 400 on the substrate 100 are all circular. For example, the diameter of the electrode 110 (dimension φ1 in the figure) is 65 μm, the diameter of the orthographic projection of the first hole portion 210 on the substrate 100 (dimension φ2 in the figure) is 100 μm, the diameter of the orthographic projection of the modified region 400 on the substrate 100 (dimension φ3 in the figure) is 110 μm, and the diameter of the orthographic projection of the outer contour of the first tooth groove 220 on the substrate 100 (dimension φ4 in the figure) is greater than 110 μm.

[0094] Optionally, as shown in Figure 15, the contour of the orthographic projection shape of the modified region 400 on the substrate 100 at least partially overlaps with the outer contour of the first tooth groove 220, and the diameter of the orthographic projection of the modified region 400 on the substrate 100 (dimension φ3 in the figure) is equal to the diameter of the orthographic projection of the outer contour of the first tooth groove 220 on the substrate 100 (dimension φ4 in the figure).

[0095] In the hole array layer structure 10 provided in the embodiment of the present application, the second tooth groove 320 is provided. When the hole array layer structure 10 is pre-coated with a non-polar medium, after the second hole portion 310 accommodates the non-polar medium, the non-polar medium is stored in the second tooth groove 320 through capillary action. When the amphiphilic molecular film is formed, the sharp angle or right angle structure on the second tooth groove 320 can also produce a tendency to aggregate, maintaining stability in the second hole portion 310, thereby improving the stability after film formation. By ensuring that the orthographic projection of the second tooth groove 320 on the substrate 100 does not overlap with the orthographic projection of the modified region 400 on the substrate 100, the area of ​​the surface of the first limiting layer 200 facing the second limiting layer 300 exposed by the second tooth groove 320 does not belong to the modified region 400, thereby avoiding the high position of the oil-water interface during the film formation process, which may cause the amphiphilic molecular film to be unstable and prone to rupture after film formation, thereby further improving the success rate of film formation.

[0096] Please refer to Figures 16 and 17. Figure 16 is one of the flow charts of the preparation method of the hole array layer structure provided in one embodiment of the present application; Figure 17 is the second flow chart of the preparation method of the hole array layer structure provided in one embodiment of the present application.

[0097] As shown in FIG16 , an embodiment of the second aspect of the present application provides a method for preparing a hole array layer structure, comprising the following steps:

[0098] In step S01 , a substrate 100 is provided, and an electrode 110 is provided on one side of the substrate 100 .

[0099] Step S02, prepare a first limiting layer 200 and a second limiting layer 300 in sequence on one side of the substrate 100, a first hole portion 210 is provided on the first limiting layer 200, which penetrates the first limiting layer 200 along the thickness direction z, the orthographic projection of the electrode 110 on the substrate 100 overlaps with the first hole portion 210 or is located within the orthographic projection of the first hole portion 210 on the substrate 100, and a second hole portion 310 is provided on the second limiting layer 300, which is connected to the first hole portion 210, the orthographic projection of the first hole portion 210 on the substrate 100 is located within, overlaps, or the orthographic projection of the second hole portion 310 on the substrate 100 is located within the orthographic projection of the first hole portion 210 on the substrate 100.

[0100] In step S03 , ultraviolet light is irradiated onto the hole array layer structure 10 from the side of the second defining layer 300 facing away from the substrate 100 , so that at least a portion of the electrode 110 forms a modified region 400 , and the modified region 400 is hydrophilic.

[0101] Optionally, as shown in FIG17 , the method for preparing the hole array layer structure further includes:

[0102] In step S04 , ultraviolet light is irradiated onto the hole array layer structure 10 from the side of the second defining layer 300 facing away from the substrate 100 , so as to form a modified region 400 on at least a portion of the first defining layer 200 . The modified region 400 is hydrophilic.

[0103] Step S03 and step S04 can be performed separately, that is: at least part of the electrode 110 is formed into a modified region 400, and on this basis, at least part of the first limiting layer 200 is formed into a modified region 400; or at least part of the first limiting layer 200 is formed into a modified region 400, and on this basis, at least part of the electrode 110 is formed into a modified region 400; the modified regions 400 are all hydrophilic.

[0104] Step S03 and step S04 can also be combined and processed together, that is, ultraviolet light is irradiated on the hole array structure 10 from the side of the second limiting layer 300 facing away from the substrate 100, so that at least part of the electrode 110 and at least part of the first limiting layer 200 simultaneously form a modified area 400, and the modified area 400 is hydrophilic.

[0105] In the preparation method of the hole array layer structure provided in the embodiment of the present application, a portion of the hole array layer structure 10 is modified by ultraviolet light irradiation. Ultraviolet light refers to a laser with a wavelength of less than 400nm. It has the advantages of high single-photon energy, strong pulse energy, and small thermal effect. It can destroy the chemical bonds on the surface of the modified area 400, so that the broken chemical bonds come into contact with oxygen in the air to form oxygen-containing hydrophilic groups, thereby making the modified area 400 hydrophilic. By making at least part of the electrode 110 belong to the modified area 400, the film yield can be significantly improved, and the surface of the electrode 110 can be repeatedly cleaned, significantly improving the conductivity of the electrode 110, so that the electrode 110 maintains good electrical properties during the sequencing process. By using ultraviolet light modification, only the irradiated modified area 400 is treated, while other unirradiated areas still retain their original properties. In addition, no chemicals contact the hole array layer structure 10 during the modification process, and the hole array layer structure 10 will not be contaminated.

[0106] Please refer to FIG. 18 , which is a third flow chart of a method for preparing a hole array layer structure provided in an embodiment of the present application.

[0107] As shown in FIG. 18 , in some optional embodiments, step S02 includes:

[0108] Step S021 : coating a first negative photoresist on one side of the substrate 100 .

[0109] In step S022 , a first mask is formed on the side of the first negative photoresist facing away from the substrate 100 , and the first negative photoresist is exposed through the first mask.

[0110] In step S023 , a second negative photoresist is coated on the side of the first negative photoresist facing away from the substrate 100 .

[0111] In step S024 , a second mask is formed on the side of the second negative photoresist facing away from the substrate 100 , and the second negative photoresist is exposed through the second mask.

[0112] In step S025 , the first negative photoresist and the second negative photoresist are developed, etched, and baked. The first negative photoresist forms the first defining layer 200 , and the second negative photoresist forms the second defining layer 300 .

[0113] In the preparation method of the hole array layer structure provided in the embodiment of the present application, the negative photoresist is exposed, developed, etched, and cured through a mask to form the first limiting layer 200 and the second limiting layer 300. The process is mature and the formed hole array layer structure 10 has high dimensional accuracy.

[0114] Please refer to FIG. 19 , which is a fourth flow chart of a method for preparing a hole array layer structure provided in an embodiment of the present application.

[0115] As shown in FIG. 19 , in some optional embodiments, step S02 includes:

[0116] Step S0201 : coating a first negative photoresist on one side of the substrate 100 .

[0117] Step S0202 : providing a mold, the mold comprising a base, a first protrusion, and a second protrusion, wherein the second protrusion is located on a side of the first protrusion facing away from the base.

[0118] Step S0203 , coating a negative photoresist on the mold, wherein the negative photoresist covers the first protrusion and the second protrusion.

[0119] In step S0204 , the side of the mold coated with negative photoresist faces the side of the substrate 100 coated with negative photoresist, so that the orthographic projection of the electrode 110 on the substrate 100 overlaps with or is located within the orthographic projection of the second protrusion on the substrate 100 .

[0120] Step S0205 , pressing the mold toward the substrate 100 .

[0121] Step S0206 , curing the negative photoresist and removing from the mold, the negative photoresist forms the first defining layer 200 and the second defining layer 300 .

[0122] In the method for preparing the hole array layer structure provided in the embodiment of the present application, the first defining layer 200 and the second defining layer 300 are formed by extruding a negative photoresist through a mold and curing it. The process is simple and has fewer steps, thereby reducing manufacturing costs.

[0123] Please refer to FIG. 20 , which is a fifth flow chart of a method for preparing a hole array layer structure provided in an embodiment of the present application.

[0124] As shown in FIG. 20 , in some optional embodiments, step S03 includes:

[0125] In step S031 , a third mask is disposed on a side of the second limiting layer 300 facing away from the substrate 100 , wherein the third mask is provided with an opening.

[0126] In step S032 , ultraviolet light is directed through the opening on the side of the third mask facing away from the substrate 100 to irradiate the hole array layer structure 10 .

[0127] Optionally, before step S032, the method further includes:

[0128] In step S0311 , a UV lamp is provided. The UV lamp is located on a side of the third mask facing away from the substrate 100 .

[0129] In the method for fabricating a hole array layer structure provided in an embodiment of the present application, the irradiation range of the ultraviolet light is controlled by a third mask, and the openings on the third mask coincide with the modified region 400. After passing through the third mask, the ultraviolet light directly irradiates the hole array layer structure 10. Ultraviolet light is emitted by an ultraviolet lamp, which is available in a wide variety of models and is relatively low in cost, thereby reducing the overall fabrication cost of the hole array layer structure 10.

[0130] Please refer to Figures 21 and 22. Figure 21 is a sixth flow chart of a method for preparing a hole array layer structure according to one embodiment of the present application; Figure 22 is a schematic diagram of the structure of a UV laser emission system and a hole array layer structure according to one embodiment of the present application. The dotted line in Figure 22 represents the optical path of the UV laser.

[0131] As shown in FIG. 21 and FIG. 22 , in some optional embodiments, before step S032, the following steps are further included:

[0132] Step S0312, provide an ultraviolet laser emitting system, which includes an emitter 22, an attenuation plate 23, a beam homogenizer 24, a reflector 25 and an objective lens 21. The ultraviolet laser emitted by the emitter 22 passes through the attenuation plate 23, the beam homogenizer 24, the reflector 25 and the objective lens 21 in sequence and then irradiates the hole array layer structure 10. The third mask 20 is located between the reflector 25 and the objective lens 21.

[0133] Optionally, in addition to the ultraviolet laser emission system in the above step S0312 and the ultraviolet lamp in step S0311, the present application may also adopt any other device that can provide ultraviolet light.

[0134] Optionally, the wavelength of the ultraviolet laser emitted by the ultraviolet laser emission system is 100-400nm, and the energy density of the ultraviolet laser is 10-1000mJ / cm 2 , the pulse number of the ultraviolet laser is 1-20, and the light frequency of the ultraviolet laser is 2-500Hz.

[0135] In the method for preparing the hole array layer structure provided in the embodiments of the present application, the ultraviolet laser is emitted by the ultraviolet laser emission system, and the parameters of the ultraviolet laser can be adjusted according to actual needs, thereby improving the application scenarios of the preparation method. The ultraviolet laser is focused by the objective lens 21 located between the third mask 20 and the hole array layer structure 10. The ultraviolet laser irradiation range can be controlled by adjusting the magnification of the objective lens 21 or the distance between the third mask 20, the hole array structure layer 10, and the objective lens 21, thereby controlling the size of the modified region 400. Due to the focusing effect of the objective lens 21 on the ultraviolet laser, the area of ​​the opening on the third mask 20 is larger than the area of ​​the modified region 400.

[0136] The pore array layer structure of any embodiment of the first aspect of the present application or the pore array layer structure prepared by the preparation method of the pore array layer structure of any embodiment of the second aspect of the present application can be used in preparing nanopore sequencing chips, preparing nanopore sensors or performing nanopore characterization analysis.

[0137] The above description is only a specific embodiment of the present application. Those skilled in the art will clearly understand that for the convenience and brevity of description, the specific working processes of the systems, modules and units described above can refer to the corresponding processes in the aforementioned method embodiments, and will not be repeated here. It should be understood that the scope of protection of the present application is not limited thereto. Any person skilled in the art can easily think of various equivalent modifications or replacements within the technical scope disclosed in the present application, and these modifications or replacements should be included in the scope of protection of the present application.

Claims

1. A hole array layer structure, comprising: A substrate, wherein an electrode is provided on one side of the substrate; a first defining layer disposed on the substrate, the first defining layer and the electrode being located on the same side of the substrate, the first defining layer being provided with a first hole penetrating the first defining layer along a thickness direction, the orthographic projection of the electrode on the substrate overlapping with the orthographic projection of the first hole on the substrate or being located within the orthographic projection of the first hole on the substrate; a second defining layer disposed on a side of the first defining layer facing away from the substrate, the second defining layer being provided with a second hole portion penetrating the second defining layer along the thickness direction, wherein an orthographic projection of the first hole portion on the substrate is located within or overlaps with an orthographic projection of the second hole portion on the substrate, or an orthographic projection of the second hole portion on the substrate is located within an orthographic projection of the first hole portion on the substrate; The hole array layer structure, wherein It also includes a modified region, which is rendered hydrophilic by ultraviolet light treatment, and at least part of the electrode belongs to the modified region.

2. The hole array layer structure according to claim 1, wherein: The orthographic projection of the electrode on the substrate overlaps with the orthographic projection of the first hole on the substrate, and the orthographic projection of the electrode on the substrate overlaps with the orthographic projection of the modified region on the substrate or is located within the orthographic projection of the modified region on the substrate.

3. The hole array layer structure according to claim 1, wherein: The orthographic projection of the electrode on the substrate is located within the orthographic projection of the first hole on the substrate; the surface of the substrate facing the first defining layer has a first overlapping area and a first exposed area, wherein in the thickness direction, the first overlapping area is an area of ​​the surface of the substrate facing the first defining layer that is covered by the first defining layer, and the first exposed area includes an area of ​​the surface of the substrate facing the first defining layer that is exposed by the first hole, and the orthographic projection of the first hole on the substrate overlaps with the orthographic projection of the first exposed area on the substrate; At least part of the first exposed area also belongs to the modified area.

4. The hole array layer structure according to claim 3, wherein: The first defining layer is further provided with a first tooth groove extending from a sidewall of the first hole portion in a direction away from the first hole portion, a plurality of the first tooth grooves are provided along the circumference of the first hole portion, and each of the first tooth grooves has an opening communicating with the first hole portion at a contour of the first hole portion, the first exposed area further including an area of ​​the surface of the substrate facing the first defining layer that is exposed by the first tooth groove, and the sum of the orthographic projection of the first hole portion on the substrate and the orthographic projection of the first tooth groove on the substrate overlaps with the orthographic projection of the first exposed area on the substrate; The orthographic projection of the first hole on the substrate overlaps with the orthographic projection of the modified region on the substrate, and a region of the surface of the substrate facing the first defining layer and exposed by the first hole belongs to the modified region.

5. The hole array layer structure according to claim 4, wherein: The orthographic projection of the first hole portion on the substrate is located within the orthographic projection of the modified region on the substrate, the orthographic projection of the first tooth groove on the substrate at least partially overlaps with the orthographic projection of the modified region on the substrate, and at least a portion of the surface of the substrate facing the first limiting layer side exposed by the first tooth groove belongs to the modified region.

6. The hole array layer structure according to claim 1, wherein: The surface of the first defining layer facing the second defining layer has a second overlapping area and a second exposed area. In the thickness direction, the second overlapping area is an area covered by the second defining layer. The second exposed area includes an area of ​​the surface of the first defining layer facing the second defining layer that is exposed by the second hole. The orthographic projection of the second hole on the substrate overlaps with the orthographic projection of the second exposed area on the substrate. The area of ​​the surface of the substrate facing the first defining layer that is exposed by the first hole and at least a portion of the second exposed area both belong to the modified area.

7. The hole array layer structure according to claim 6, wherein: The second defining layer is further provided with a second tooth groove extending from a sidewall of the second hole portion in a direction away from the second hole portion, a plurality of the second tooth grooves are provided along the circumference of the second hole portion, and each second tooth groove has an opening communicating with the second hole portion at a contour of the second hole portion, the second exposed area further including an area of ​​the surface of the first defining layer facing the second defining layer that is exposed by the second tooth groove, and the sum of the orthographic projection of the second hole portion on the substrate and the orthographic projection of the second tooth groove on the substrate overlaps with the orthographic projection of the second exposed area on the substrate; The orthographic projection of the second tooth groove on the substrate does not overlap with the orthographic projection of the modified region on the substrate, and the area of ​​the surface of the first defining layer facing the second defining layer exposed by the second tooth groove does not belong to the modified region.

8. The hole array layer structure according to claim 6, wherein: In the radial direction of the first hole portion, a distance between the outline of the modified region and the outline of the first hole portion is less than or equal to 1 / 3 of a distance between the outline of the second hole portion and the outline of the first hole portion.

9. A method for preparing a hole array layer structure, wherein: The following steps are involved: Providing a substrate, wherein an electrode is provided on one side of the substrate; A first defining layer and a second defining layer are sequentially prepared on one side of the substrate, wherein the first defining layer is provided with a first hole portion penetrating the first defining layer in a thickness direction, the orthographic projection of the electrode on the substrate overlaps with or is located within the orthographic projection of the first hole portion on the substrate, and the second defining layer is provided with a second hole portion communicating with the first hole portion, the orthographic projection of the first hole portion on the substrate is located within or overlaps with the orthographic projection of the second hole portion on the substrate, or the orthographic projection of the second hole portion on the substrate is located within the orthographic projection of the first hole portion on the substrate; Ultraviolet light is irradiated onto the hole array layer structure from the side of the second limiting layer facing away from the substrate, so that at least a portion of the electrodes forms a modified region, and the modified region is hydrophilic.

10. The method for preparing a hole array layer structure according to claim 9, wherein: The step of sequentially preparing a first defining layer and a second defining layer on one side of the substrate, providing a first hole portion penetrating the first defining layer along a thickness direction on the first defining layer, wherein the orthographic projection of the electrode on the substrate overlaps with or is located within the orthographic projection of the first hole portion on the substrate, and providing a second hole portion communicating with the first hole portion on the second defining layer, wherein the orthographic projection of the first hole portion on the substrate is located within the orthographic projection of the second hole portion on the substrate, comprises: coating a first negative photoresist on one side of the substrate; covering a first mask on a side of the first negative photoresist facing away from the substrate, and exposing the first negative photoresist through the first mask; Coating a second negative photoresist on a side of the first negative photoresist facing away from the substrate; covering a second mask on a side of the second negative photoresist facing away from the substrate, and exposing the second negative photoresist through the second mask; The first negative photoresist and the second negative photoresist are developed, etched and baked, the first negative photoresist forms the first defining layer, and the second negative photoresist forms the second defining layer.

11. The method for preparing a hole array layer structure according to claim 9, wherein: The step of sequentially preparing a first defining layer and a second defining layer on one side of the substrate, providing a first hole portion penetrating the first defining layer along a thickness direction on the first defining layer, wherein the orthographic projection of the electrode on the substrate overlaps with or is located within the orthographic projection of the first hole portion on the substrate, and providing a second hole portion communicating with the first hole portion on the second defining layer, wherein the orthographic projection of the first hole portion on the substrate is located within the orthographic projection of the second hole portion on the substrate, comprises: coating a negative photoresist on one side of the substrate; Providing a mold, the mold comprising a base, a first protrusion, and a second protrusion, wherein the second protrusion is located on a side of the first protrusion facing away from the base; coating a negative photoresist on the mold, wherein the negative photoresist covers the first protrusion and the second protrusion; Directing the side of the mold coated with negative photoresist toward the side of the substrate coated with negative photoresist, so that the orthographic projection of the electrode on the substrate overlaps with the orthographic projection of the second protrusion on the substrate or is located within the orthographic projection of the second protrusion on the substrate; pressing the mold toward the substrate; The negative photoresist is cured and separated from the mold, and the negative photoresist forms the first defining layer and the second defining layer.

12. The method for preparing a hole array layer structure according to claim 9, wherein: The step of irradiating the hole array layer structure with ultraviolet light from a side of the second limiting layer facing away from the substrate so that at least a portion of the electrodes form a modified region, wherein the modified region is hydrophilic, comprises: A third mask is arranged on a side of the second limiting layer facing away from the substrate, wherein the third mask is provided with an opening; The ultraviolet light is directed from the side of the third mask away from the substrate through the opening and then irradiates the hole array layer structure.

13. The method for preparing a hole array layer structure according to claim 12, wherein: Before the step of allowing ultraviolet light to pass through the opening from the side of the third mask away from the substrate and then irradiate the hole array layer structure, the method further includes: An ultraviolet lamp is provided, and the ultraviolet lamp is located on a side of the third mask away from the substrate.

14. The method for preparing a hole array layer structure according to claim 12, wherein: Before the step of allowing ultraviolet light to pass through the opening from the side of the third mask away from the substrate and then irradiate the hole array layer structure, the method further includes: An ultraviolet laser emission system is provided, which includes an emitter, an attenuation plate, a beam homogenizer, a reflector and an objective lens. The ultraviolet laser emitted by the emitter passes through the attenuation plate, the beam homogenizer, the reflector and the objective lens in sequence and then irradiates the hole array layer structure. The third mask is located between the reflector and the objective lens.

15. The method for preparing a hole array layer structure according to claim 14, wherein: The wavelength of the ultraviolet laser emitted by the ultraviolet laser emitting system is 100-400nm, and the energy density of the ultraviolet laser is 10-1000mJ / cm 2 The pulse number of the ultraviolet laser is 1-20, and the light output frequency of the ultraviolet laser is 2-500 Hz.

16. The method for preparing a hole array layer structure according to claim 9, wherein: Also includes: Ultraviolet light is irradiated onto the hole array layer structure from the side of the second defining layer facing away from the substrate, so that at least a portion of the first defining layer also forms the modified region, and the modified region is hydrophilic.

17. The pore array layer structure according to any one of claims 1 to 8 or the pore array layer structure prepared by the method for preparing a pore array layer structure according to any one of claims 9 to 16 can be used in preparing a nanopore sequencing chip, preparing a nanopore sensor, or performing nanopore characterization analysis.

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