Substrate processing device, plasma generation device, substrate processing method, method for manufacturing semiconductor device, and program

Abstract

Provided is a technique capable of more uniform substrate processing.　The present invention has: a processing chamber for processing a substrate; and a first electrode unit including a first electrode section which includes a first electrode to which high-frequency power is applied and a second electrode to which a reference potential is applied, the first electrode and the second electrode being equal in length, a second electrode section which includes the first electrode and the second electrode different in length from that of the first electrode and the second electrode of the first electrode section, and a third electrode section which includes the first electrode and the second electrode different in length from those of the first electrode and the second electrode of the first electrode section and the first electrode and the second electrode of the second electrode section.

Description

Substrate processing apparatus, plasma generating apparatus, substrate processing method, semiconductor device manufacturing method and program

[0001] The present disclosure relates to a substrate processing apparatus, a plasma generating apparatus, a substrate processing method, a method for manufacturing a semiconductor device, and a program.

[0002] As one step in the manufacturing process of a semiconductor device, substrate processing may be performed in which a substrate is carried into a processing chamber of a substrate processing apparatus, and raw material gases and reactive gases are supplied into the processing chamber to form various films, such as insulating films, semiconductor films, and conductor films, on the substrate, or to remove various films.

[0003] In mass-produced devices where fine patterns are formed, lower temperatures are sometimes required to suppress the diffusion of impurities and to enable the use of materials with low heat resistance, such as organic materials.

[0004] Japanese Patent Application Laid-Open No. 2007-324477

[0005] To solve this problem, substrate processing using plasma is generally performed, but this can make it difficult to uniformly process the film.

[0006] The present disclosure provides techniques that allow for more uniform substrate processing.

[0007] According to one aspect of the present disclosure, there is provided a technology having: a processing chamber for processing a substrate; a first electrode unit including: a first electrode portion having a first electrode to which high-frequency power is applied and a second electrode to which a reference potential is applied, the first electrode portion including the first electrode and the second electrode having lengths different from the first electrode and the second electrode of the first electrode portion; and a third electrode portion having the first electrode and the second electrode having lengths different from the first electrode and the second electrode of the first electrode portion and the first electrode and the second electrode of the second electrode portion.

[0008] The present disclosure allows for more uniform substrate processing.

[0009] FIG. 1 is a schematic configuration diagram of a vertical processing furnace of a substrate processing apparatus suitably used in an embodiment of the present disclosure, and is a diagram showing a vertical cross section of the processing furnace portion. FIG. 2 is a cross-sectional view taken along the line A-A of the substrate processing apparatus shown in FIG. 1. FIG. 3(a) is a perspective view of an electrode according to an embodiment of the present disclosure when installed in an electrode fixture, and FIG. 3(b) is a diagram showing the positional relationship between a heater, an electrode fixture, an electrode, a protrusion for fixing the electrode, and a reaction tube according to an embodiment of the present disclosure. FIG. 4(a) is a front view of an electrode according to an embodiment of the present disclosure, and FIG. 4(b) is a diagram illustrating how the electrode is fixed to the electrode fixture. FIG. 4(b) is a diagram illustrating the height of an electrode portion of an electrode unit according to an embodiment of the present disclosure. FIG. 4(b) is a block diagram illustrating a schematic configuration of a controller in the substrate processing apparatus shown in FIG. 1, and is an example of a control system of the controller. FIG. 4(b) is a flowchart illustrating an example of a substrate processing process using the substrate processing apparatus shown in FIG. 1. FIG. 4(b) is a diagram illustrating the height of an electrode portion of an electrode unit according to a first modification of the present disclosure. FIG. 4(b) is a diagram illustrating the height of an electrode portion of an electrode unit according to a third modification of the present disclosure.

[0010] Hereinafter, embodiments of the present disclosure will be described with reference to Figures 1 to 7. Note that all drawings used in the following description are schematic, and the dimensional relationships, ratios, etc. of elements shown in the drawings do not necessarily correspond to the actual ones. Furthermore, the dimensional relationships, ratios, etc. of elements between multiple drawings do not necessarily correspond to the actual ones. Unless otherwise specified in the specification, each element is not limited to one, and multiple elements may be present.

[0011] (1) Configuration of the Substrate Processing Apparatus (Heating Device) As shown in FIG. 1, the processing furnace 202 of the vertical substrate processing apparatus has a heater 207 as a heating device. The heating device is also called a heating mechanism or a heating section. The heater 207 is cylindrical and is installed vertically by being supported by a holding plate. The heater 207 also functions as an activation mechanism that activates (excites) gases with heat. The activation mechanism is also called an excitation section.

[0012] (Processing Chamber) An electrode fixture 301 (described later) is disposed inside the heater 207, and an electrode 300 (described later) of a plasma generating unit is disposed inside the electrode fixture 301. Furthermore, a reaction tube 203 is disposed concentrically with the heater 207 inside the electrode 300. The reaction tube 203 is made of, for example, quartz (SiO ２ The reaction tube 203 is made of a heat-resistant material such as silicon carbide (SiC) or silicon carbide (SiC) and has a cylindrical shape with a closed top end and an open bottom end. A manifold 209 is disposed concentrically with the reaction tube 203 below the reaction tube 203. The manifold 209 is made of a metal such as stainless steel (SUS) and has a cylindrical shape with open top and bottom ends. The upper end of the manifold 209 engages with the lower end of the reaction tube 203 to support the reaction tube 203. An O-ring 220a is provided as a sealing member between the manifold 209 and the reaction tube 203. The manifold 209 is supported on a heater base, so that the reaction tube 203 is installed vertically. The reaction tube 203 and the manifold 209 mainly constitute a processing vessel. The processing vessel is also referred to as a reaction vessel. A processing chamber 201 is formed in the cylindrical hollow portion of the processing vessel. The processing chamber 201 is configured to be able to accommodate a plurality of substrates, i.e., wafers 200. The wafers 200 are processed in the processing chamber 201. Note that the processing vessel is not limited to the above configuration, and in some cases only the reaction tube 203 may be referred to as the processing vessel.

[0013] (Gas Supply Unit) Nozzles 249a and 249b serving as first and second supply units are provided in the processing chamber 201, respectively, penetrating the sidewall of the manifold 209. The nozzles 249a and 249b are also referred to as first and second nozzles, respectively. The nozzles 249a and 249b are made of a heat-resistant material such as quartz or SiC. Gas supply pipes 232a and 232b are connected to the nozzles 249a and 249b, respectively. In this manner, the processing vessel is provided with two nozzles 249a and 249b and two gas supply pipes 232a and 232b, enabling multiple types of gases to be supplied into the processing chamber 201. Note that when only the reaction tube 203 is used as the processing vessel, the nozzles 249a and 249b may be provided penetrating the sidewall of the reaction tube 203.

[0014] The gas supply pipes 232a and 232b are respectively provided with mass flow controllers (MFCs) 241a and 241b as flow rate controllers and valves 243a and 243b as on-off valves, in order from the upstream side of the gas flow. The flow rate controllers are also referred to as flow rate control units. Gas supply pipes 232c and 232d for supplying inert gas are connected to the gas supply pipes 232a and 232b downstream of the valves 243a and 243b. The gas supply pipes 232c and 232d are respectively provided with MFCs 241c and 241d and valves 243c and 243d, in order from the upstream side.

[0015] As shown in FIGS. 1 and 2 , the nozzles 249a and 249b are respectively provided in an annular space between the inner wall of the reaction tube 203 and the wafers 200 in a plan view, extending from the lower portion to the upper portion of the inner wall of the reaction tube 203 and rising upward in the stacking direction of the wafers 200. That is, the nozzles 249a and 249b are respectively provided on the sides of the end (i.e., peripheral portion) of each wafer 200 loaded into the processing chamber 201, perpendicular to the surface (flat surface) of the wafer 200. Gas supply holes 250a and 250b for supplying gas are respectively provided on the side surfaces of the nozzles 249a and 249b. The gas supply hole 250a opens toward the center of the reaction tube 203, enabling gas to be supplied toward the wafers 200. A plurality of the gas supply holes 250a and 250b are respectively provided from the lower portion to the upper portion of the reaction tube 203.

[0016] As described above, in this embodiment, gas is transported via nozzles 249a and 249b arranged within a vertically elongated space, i.e., a cylindrical space, that is an annular shape in a plan view defined by the inner wall of the sidewall of the reaction tube 203 and the ends of the multiple wafers 200 arranged within the reaction tube 203. Gas is first ejected into the reaction tube 203 near the wafers 200 from gas supply holes 250a and 250b opened in the nozzles 249a and 249b, respectively. The main flow of gas within the reaction tube 203 is parallel to the surfaces of the wafers 200, i.e., horizontally. This configuration allows for uniform gas supply to each wafer 200, thereby improving the uniformity of the film thickness formed on each wafer 200. The gas that flows over the surfaces of the wafers 200, i.e., the residual gas after the reaction, flows toward the exhaust port, i.e., toward the exhaust pipe 231, which will be described later. However, the direction of the flow of the residual gas is appropriately determined depending on the position of the exhaust port, and is not limited to the vertical direction.

[0017] A raw material (raw material gas) is supplied from the gas supply pipe 232a into the processing chamber 201 via an MFC 241a, a valve 243a, and a nozzle 249a.

[0018] A reactant (reaction gas) is supplied from the gas supply pipe 232b into the processing chamber 201 via an MFC 241b, a valve 243b, and a nozzle 249b.

[0019] Inert gas is supplied from the gas supply pipes 232c and 232d into the processing chamber 201 via MFCs 241c and 241d, valves 243c and 243d, and nozzles 249a and 249b, respectively.

[0020] A raw material supply system serving as a first gas supply system is mainly composed of the gas supply pipe 232a, the MFC 241a, and the valve 243a. A reactant supply system (reaction gas supply system) serving as a second gas supply system is mainly composed of the gas supply pipe 232b, the MFC 241b, and the valve 243b. An inert gas supply system is mainly composed of the gas supply pipes 232c and 232d, the MFCs 241c and 241d, and the valves 243c and 243d. The raw material supply system, the reactant supply system, and the inert gas supply system are also simply referred to as gas supply systems or gas supply units.

[0021] (Substrate Support) As shown in FIG. 1 , a boat 217 serving as a substrate support is configured to support multiple wafers 200, e.g., 25 to 200 wafers 200, in a horizontal position, aligned vertically with their centers aligned, in multiple stages, i.e., spaced apart. The boat 217 is formed of a heat-resistant material such as quartz or SiC. A heat insulating plate 218, also made of a heat-resistant material such as quartz or SiC, is supported in multiple stages at the bottom of the boat 217. This configuration makes it difficult for heat from the heater 207 to be transmitted to the seal cap 219. However, this embodiment is not limited to this configuration. For example, instead of providing the heat insulating plate 218 at the bottom of the boat 217, a heat insulating cylinder, which is a cylindrical member made of a heat-resistant material such as quartz or SiC, may be provided.

[0022] (Plasma Generation Unit) Next, the plasma generation unit will be described with reference to FIGS. 1 to 5. FIG.

[0023] An electrode 300 for generating plasma is provided outside the reaction tube 203, i.e., outside the processing chamber 201. By applying power to the electrode 300, it is possible to convert a gas into plasma and excite it inside the reaction tube 203, i.e., inside the processing chamber 201, i.e., to excite the gas into a plasma state. Hereinafter, simply by applying power to excite the gas into a plasma state, capacitively coupled plasma (abbreviated as CCP) is generated inside the reaction tube 203, i.e., inside the processing chamber 201.

[0024] 2, an electrode 300 and an electrode fixture 301 for fixing the electrode 300 are disposed between the heater 207 and the reaction tube 203. The electrode fixture 301 is disposed inside the heater 207, the electrode 300 is disposed inside the electrode fixture 301, and the reaction tube 203 is disposed inside the electrode 300.

[0025] 1 and 2 , the electrode 300 and the electrode fixture 301 are provided in a circular space between the inner wall of the heater 207 and the outer wall of the reaction tube 203 in a plan view, extending from the bottom to the top of the outer wall of the reaction tube 203 in the arrangement direction of the wafers 200. The electrode 300 is provided parallel to the nozzles 249a and 249b. The electrode 300 and the electrode fixture 301 are arranged and disposed concentrically with the reaction tube 203 and the heater 207 in a plan view, but not in contact with the heater 207. The electrode fixture 301 is made of an insulating material (i.e., an insulator) and is provided to cover at least a portion of the electrode 300 and the reaction tube 203. For this reason, the electrode fixture 301 can also be referred to as a cover (quartz cover, insulating wall, insulating plate) or a cross-sectional arc cover (cross-sectional arc body, cross-sectional arc wall).

[0026] As shown in FIG. 2 , a plurality of electrodes 300 are provided, and these electrodes 300 are fixed to and installed on the inner wall of an electrode fixture 301. Here, the electrode fixture 301 and the electrodes 300 can also be referred to as an electrode unit. As shown in FIG. 2 , the electrode unit is preferably arranged at a position avoiding the nozzles 249 a, 249 b and the exhaust pipe 231. FIG. 2 illustrates an example in which two electrode units are arranged outside the processing chamber 201, facing each other across the center of the wafer 200 or the reaction tube 203, avoiding the nozzles 249 a, 249 b and the exhaust pipe 231. Note that FIG. 2 illustrates an example in which the two electrode units are arranged line-symmetrically, i.e., symmetrically, with a line L as the axis of symmetry in a plan view. By arranging the electrode units in this manner, it is possible to arrange the nozzles 249 a, 249 b, the temperature sensor 263, and the exhaust pipe 231 outside the plasma generation region in the processing chamber 201. It is also possible to suppress plasma damage to these members, wear and tear of these members, and generation of particles from these members.

[0027] A high frequency power of, for example, 25 MHz to 35 MHz, more specifically, 27.12 MHz, is input to the electrode 300 from a high frequency power supply 320 via a matching box 325, thereby generating plasma (active species) 302 in the reaction tube 203. The high frequency power supply 320 is also referred to as an RF (Radio Frequency) power supply. The plasma generated in this manner makes it possible to supply plasma 302 for substrate processing to the surface of the wafer 200 from around the wafer 200. Power is supplied from the lower side (lower end) of the electrode 300.

[0028] The electrodes 300, i.e., the first electrode 300-1 and the second electrode 300-2, mainly constitute a plasma generating unit that excites (activates) the gas into a plasma state. The plasma generating unit is also called a plasma excitation unit or a plasma activation mechanism. The electrode fixture 301, the matching box 325, and the high-frequency power supply 320 may be considered to be included in the plasma generating unit.

[0029] The basic structure of the electrode unit will be described with reference to FIGS. 3(a), 3(b), 4(a) and 4(b).

[0030] As shown in FIGS. 3( a) and 3(b), the electrode 300 includes a first electrode (first electrode) 300-1 and a second electrode (second electrode) 300-2. The first electrode 300-1 is connected to a high-frequency power supply 320 via a matching box 325, and a given potential is applied to the first electrode 300-1. In other words, high-frequency power is applied to the first electrode 300-1. The second electrode 300-2 is grounded to earth and serves as a reference potential (0 V). In other words, a reference potential is applied to the second electrode 300-2. The first electrode 300-1 is also referred to as a hot electrode or a hot electrode, and the second electrode 300-2 is also referred to as a ground electrode or a ground electrode. The first electrode 300-1 and the second electrode 300-2 are each configured as a plate-shaped member when viewed from the front. At least one first electrode 300-1 is provided, and at least one second electrode 300-2 is provided. FIGS. 3(a) and 3(b) show an example in which multiple first electrodes 300-1 and multiple second electrodes 300-2 are provided, while FIG. 3(a) shows an example in which eight first electrodes 300-1 and four second electrodes 300-2 are provided. By applying high-frequency power between the first electrode 300-1 and the second electrode 300-2 from the high-frequency power supply 320 via the matching box 325, plasma is generated in the region between the first electrode 300-1 and the second electrode 300-2. These regions are also referred to as plasma generation regions. In the present disclosure, when there is no need to distinguish between the first electrode 300-1 and the second electrode 300-2, they will be referred to as electrodes 300.

[0031] As shown in FIG. 1 , the electrodes 300 are disposed perpendicular to the processing vessel (vertical direction, the direction in which substrates are stacked). As shown in FIGS. 2 and 3B , the electrodes 300 are disposed in an arc-like shape in a plan view and at equal intervals, i.e., so that the distance (gap) between adjacent electrodes 300 (e.g., between the first electrode 300-1 and the second electrode 300-2) is equal. The electrodes 300 are disposed between the reaction tube 203 and the heater 207 in a substantially arc-like shape in a plan view along the outer wall of the reaction tube 203, and are fixed to the inner wall surface of the electrode fixture 301, which is formed in an arc-like shape with a central angle of 30 degrees or more and 240 degrees or less. As described above, the electrodes 300 are disposed parallel to the nozzles 249 a and 249 b.

[0032] The electrodes 300 (first electrode 300-1, second electrode 300-2) are made of an oxidation-resistant material such as nickel (Ni). The electrodes 300 can also be made of metal materials such as stainless steel, aluminum (Al), or copper (Cu). However, using an oxidation-resistant material such as Ni can suppress degradation of electrical conductivity and reduce the decrease in plasma generation efficiency. Furthermore, the electrodes 300 can also be made of an Ni alloy material with added Al. In this case, an aluminum oxide film (AlO film), which is an oxide film with high heat resistance and corrosion resistance, can be formed on the outermost surface of the electrodes 300. The AlO film formed on the outermost surface of the electrodes 300 acts as a protective film (block film, barrier film) and can suppress the progression of internal deterioration of the electrodes 300. This makes it possible to further suppress the decrease in plasma generation efficiency due to a decrease in the electrical conductivity of the electrodes 300. The electrode fixture 301 is made of an insulating material (insulator), for example, a heat-resistant material such as quartz or SiC. The material of the electrode fixture 301 is preferably the same as the material of the reaction tube 203 .

[0033] The electrode 300 preferably has a thickness of 0.1 mm to 1 mm and a width of 5 mm to 30 mm so as to have sufficient strength and not significantly reduce the efficiency of wafer heating by the heat source. It also preferably has a bent structure as a deformation suppression section to prevent deformation due to heating by the heater 207. In this case, the electrode 300 is disposed between the reaction tube 203 and the heater 207, and due to space constraints, a bending angle of 90° to 175° is appropriate. A film formed on the electrode surface by thermal oxidation may peel off due to thermal stress, generating particles, so care must be taken not to bend it too much.

[0034] As shown in FIGS. 4( a) and 4(b), the inner wall surface of the electrode fixture 301 is provided with protrusions (hooks) 310 onto which the electrode 300 can be hooked, and the electrode 300 is provided with openings 305, which are through-holes through which the protrusions 310 can be inserted. The openings 305 are composed of a circular notch 303 through which the protrusion heads 311 pass and a slide notch 304 through which the protrusion shafts 312 slide. The electrode 300 can be fixed to the electrode fixture 301 by hooking the electrode 300 onto the protrusions 310 provided on the inner wall surface of the electrode fixture 301 via the openings 305. Note that FIG. 3(a) shows an example in which two openings 305 are provided per electrode 300, and one electrode 300 is fixed by hooking two protrusions 310 onto it, i.e., an example in which one electrode is fixed at two locations.

[0035] The electrodes 300 are fixed to the inner wall surface of an electrode fixture 301, which is a curved electrode fixture, and are integrated with the electrode fixture 301 to form a unit (hook-type electrode unit) that is installed on the outer periphery of the reaction tube 203. Quartz is used as the material for the electrode fixture 301. To maintain a constant distance between the electrode fixture 301 or the reaction tube 203 and the electrode 300, the electrode fixture 301 or the electrode 300 may have an elastic body such as a spacer or spring between them, or these may be integrated with the electrode fixture 301 or the electrode 300. In this embodiment, a spacer 330 as shown in FIG. 4( b) is integrated with the electrode fixture 301. Providing multiple spacers 330 for one electrode is effective in maintaining a constant distance between them. Here, the spacer 330 may be included in the electrode unit described above.

[0036] The electrode fixture 301 is preferably configured to have a thickness in the range of 1 mm to 5 mm so as to have sufficient strength and not significantly reduce the efficiency of wafer heating by the heater 207. If the thickness of the electrode fixture 301 is less than 1 mm, it will not be possible to obtain the required strength against the electrode fixture 301's own weight, temperature changes, etc. Furthermore, if it is configured to be thicker than 5 mm, it will absorb the thermal energy radiated from the heater 207, making it impossible to properly perform heat treatment on the wafer 200.

[0037] Here, the pressure inside the furnace during substrate processing is preferably controlled within a range of 10 Pa or more and 300 Pa or less. This is because, when the pressure inside the furnace is lower than 10 Pa, the mean free path of gas molecules becomes longer than the Debye length of the plasma, and the plasma directly striking the furnace wall becomes significant, making it difficult to suppress particle generation. Furthermore, when the pressure inside the furnace is higher than 300 Pa, the plasma generation efficiency becomes saturated, and the amount of plasma generated does not change even when reactive gas is supplied, resulting in wasteful consumption of reactive gas. Furthermore, the shorter mean free path of gas molecules reduces the efficiency of transport of plasma active species to the wafer.

[0038] To obtain high substrate processing capacity at substrate temperatures of 500° C. or less, it is desirable that the occupancy rate of the electrode fixture 301 be a substantially arc-shaped fixture with a central angle of 30° to 240°. Furthermore, to prevent particle generation, it is desirable that the electrode fixture 301 be positioned so as to avoid the exhaust pipe 231, which serves as an exhaust port, and the nozzles 249 a and 249 b. That is, the electrode fixture 301 is positioned on the outer periphery of the reaction tube 203 except for the positions where the nozzles 249 a and 249 b, which serve as gas supply units, and the exhaust pipe 231, which serves as a gas exhaust unit, are installed inside the reaction tube 203. In this embodiment, two electrode fixtures 301, each with a central angle of 110°, are installed symmetrically.

[0039] A specific example of electrodes used in the two electrode units shown in FIG. 2 will be described with reference to FIG.

[0040] Six sets of electrode sections, each consisting of two first electrodes (first electrodes) 300-1 and one second electrode (second electrode) 300-2, are arranged in the first and second electrode units (first unit and second unit) 31, 32. The six sets of first to sixth electrode sections (first to sixth electrode sections) 300a to 300f are arranged in this order from the left side of FIG. 5 . The electrode sections 300a to 300f of the electrode unit 31 are also referred to as the first electrode group, and the electrode sections 300a to 300f of the electrode unit 32 are also referred to as the second electrode group. The first electrodes 300-1 are arranged consecutively. The first electrodes 300-1, 300-1, and 300-2 are arranged in this order. The number of first electrodes 300-1 is not limited to two, and may be two or more. In this case, one second electrode 300-2 is provided for a plurality of first electrodes 300-1. The number of second electrodes 300-2 is not limited to one, and may differ from the number of first electrodes 300-1.

[0041] In the electrode unit 31, the positions (heights) of the upper ends of the first electrodes 300-1 and second electrodes 300-2 of the electrode sections 300a to 300f are the same, and extend from a position (H7) below the lower end of the substrate holding area SHA to a portion of the substrate holding area SHA. In other words, the lengths of the first electrodes 300-1 and second electrodes 300-2 of the electrode sections 300a to 300f are the same. The heights decrease in the order of the electrode sections 300a to 300f. Note that the lengths of the first electrodes and second electrodes need only be substantially the same.

[0042] Here, the substrate holding area SHA refers to an area in the boat 217 that holds wafers 200. The wafers 200 refer to at least one of product wafers, dummy wafers, and fill dummy wafers. The substrate holding area SHA is divided vertically into six areas WH1 to WH6, and the boundary positions (heights) of the six areas are designated H1, H2, H3, H4, and H5, from top to bottom. For example, areas WH2 to WH5 are approximately the same size, with area WH1 being narrower than area WH2, and area WH6 being narrower than area WH1. Dummy wafers are placed in the upper or all areas of area WH1 and the lower or all areas of area WH6, and the substrate processing area is narrower than the substrate holding area SHA. The upper end position (height) of the substrate holding area SHA is designated H0, and the lower end position (height) is designated H6.

[0043] The height of the upper ends of the first electrode 300-1 and the second electrode 300-2 of the first electrode section 300a of the electrode unit 31 is height H1, which is lower than the height H0 of the tips of the first electrode 300-1 and the second electrode 300-2 of the electrode unit 32. The height of the upper ends of the first electrode 300-1 and the second electrode 300-2 of the second electrode section 300b of the electrode unit 31 is lower than height H1 and higher than height H2. The height of the upper ends of the first electrode 300-1 and the second electrode 300-2 of the third electrode section 300c of the electrode unit 31 is lower than height H2 and higher than height H3.

[0044] In other words, the lengths of the first electrode 300-1 and the second electrode 300-2 of the first electrode portion 300a are longer than the lengths of the first electrode 300-1 and the second electrode 300-2 of the second electrode portion 300b. The lengths of the first electrode 300-1 and the second electrode 300-2 of the second electrode portion 300b are shorter than the lengths of the first electrode 300-1 and the second electrode 300-2 of the first electrode portion 300a. Furthermore, the lengths of the first electrode 300-1 and the second electrode 300-2 of the second electrode portion 300b are longer than the lengths of the first electrode 300-1 and the second electrode 300-2 of the third electrode portion 300c. The lengths of the first electrode 300-1 and the second electrode 300-2 of the third electrode section 300c are shorter than the lengths of the first electrode 300-1 and the second electrode 300-2 of the first electrode section 300a. The lengths of the first electrode 300-1 and the second electrode 300-2 of the third electrode section 300c are also shorter than the lengths of the first electrode 300-1 and the second electrode 300-2 of the second electrode section 300b. The lengths of the first electrode 300-1 and the second electrode 300-2 of the first electrode section 300a of the electrode unit 31 are also shorter than the lengths of the first electrode 300-1 and the second electrode 300-2 of the electrode unit 32.

[0045] The height of the upper ends of the first electrode 300-1 and the second electrode 300-2 of the fourth electrode section 300d of the electrode unit 31 is H3. The height of the upper ends of the first electrode 300-1 and the second electrode 300-2 of the fifth electrode section 300e of the electrode unit 31 is lower than H3 and higher than H4. The height of the upper ends of the first electrode 300-1 and the second electrode 300-2 of the sixth electrode section 300f of the electrode unit 31 is H4.

[0046] In the electrode unit 32, the positions (heights) of the upper ends of the first electrodes 300-1 and second electrodes 300-2 of the electrode sections 300a to 300f are the same. Furthermore, the first electrodes 300-1 and second electrodes 300-2 of the electrode sections 300a to 300f extend from a position (H7) below the lower end of the substrate-holding area SHA to the upper end (H0) of the substrate-holding area SHA. In other words, the lengths of the first electrodes 300-1 and second electrodes 300-2 of the electrode sections 300a to 300f are the same.

[0047] For example, the width of each of the first electrode 300-1 and the second electrode 300-2 is 12.5 mm. The gap between the first electrodes 300-1 and 300-1, and the gap between the first electrode 300-1 and the second electrode 300-2 are both 7.5 mm.

[0048] (Exhaust Section) As shown in FIG. 1 , the reaction tube 203 is provided with an exhaust pipe 231 for exhausting the atmosphere in the processing chamber 201. The exhaust pipe 231 is connected to a vacuum pump 246 as a vacuum exhaust device via a pressure sensor 245 as a pressure detector for detecting the pressure in the processing chamber 201 and an APC (Auto Pressure Controller) valve 244 as an exhaust valve. The pressure detector is also referred to as a pressure detection section, and the exhaust valve is also referred to as a pressure adjustment section. The APC valve 244 is a valve that can evacuate and stop the evacuation of the processing chamber 201 by opening and closing the valve while the vacuum pump 246 is operating. The APC valve 244 is also configured to adjust the pressure in the processing chamber 201 by adjusting the valve opening based on pressure information detected by the pressure sensor 245 while the vacuum pump 246 is operating. The exhaust system is mainly composed of the exhaust pipe 231, the APC valve 244, and the pressure sensor 245. The exhaust system may include the vacuum pump 246. The exhaust pipe 231 is not limited to being provided in the reaction tube 203, but may be provided in the manifold 209 in the same manner as the nozzles 249a and 249b.

[0049] (Peripheral Devices) A ​​seal cap 219 is provided below the manifold 209 as a furnace port cover that can airtightly close the lower end opening of the manifold 209. The seal cap 219 is configured to abut against the lower end of the manifold 209 from below in the vertical direction. The seal cap 219 is formed of a metal such as SUS and has a disk shape. An O-ring 220b is provided on the upper surface of the seal cap 219 as a sealing member that abuts against the lower end of the manifold 209.

[0050] A rotation mechanism 267 for rotating the boat 217 is installed on the opposite side of the seal cap 219 from the processing chamber 201. A rotation shaft 255 of the rotation mechanism 267 is connected to the boat 217 through the seal cap 219. The rotation mechanism 267 is configured to rotate the wafers 200 by rotating the boat 217. The seal cap 219 is configured to be raised and lowered vertically by a boat elevator 115, which serves as an elevating mechanism installed vertically outside the reaction tube 203. The boat elevator 115 is configured to raise and lower the seal cap 219, thereby enabling the boat 217 to be loaded into and unloaded from the processing chamber 201.

[0051] The boat elevator 115 is configured as a transfer device that transfers the boat 217, i.e., the wafers 200, into and out of the process chamber 201. The transfer device is also referred to as a transfer mechanism. A shutter 219s is provided below the manifold 209 as a furnace port cover that can airtightly close the lower end opening of the manifold 209 while the seal cap 219 is being lowered by the boat elevator 115. The shutter 219s is made of a metal such as SUS and has a disk shape. An O-ring 220c is provided on the upper surface of the shutter 219s as a sealing member that abuts against the lower end of the manifold 209. The opening and closing operation of the shutter 219s (e.g., lifting and lowering operation, rotation operation, etc.) is controlled by a shutter opening and closing mechanism 115s.

[0052] A temperature sensor 263 serving as a temperature detector is installed inside the reaction tube 203. The temperature distribution inside the processing chamber 201 is achieved as desired by adjusting the power supply to the heater 207 based on the temperature information detected by the temperature sensor 263. The temperature sensor 263 is installed along the inner wall of the reaction tube 203, similar to the nozzles 249 a and 249 b.

[0053] (Control Device) Next, the control device will be described with reference to Fig. 6. As shown in Fig. 6, the controller 121, which is a control unit (control device), is configured as a computer including a CPU (Central Processing Unit) 121a, a RAM (Random Access Memory) 121b, a storage device 121c, and an I / O port 121d. The RAM 121b, the storage device 121c, and the I / O port 121d are configured to be able to exchange data with the CPU 121a via an internal bus 121e. An input / output device 122, which is configured as, for example, a touch panel, is connected to the controller 121.

[0054] The storage device 121c is composed of, for example, a flash memory, a hard disk drive (HDD), a solid state drive (SSD), etc. Control programs for controlling the operation of the substrate processing apparatus, process recipes describing procedures and conditions for film formation processes (described later), etc., are readably stored in the storage device 121c. The process recipes are combinations of procedures for various processes (e.g., film formation processes) described later that are executed by the controller 121 in the substrate processing apparatus to obtain predetermined results, and function as a program. Hereinafter, process recipes, control programs, etc. are collectively referred to simply as programs. Furthermore, process recipes are also simply referred to as recipes. In this specification, the term "program" may refer to a recipe alone, a control program alone, or both. The RAM 121b is configured as a memory area (work area) for temporarily storing programs, data, etc. read by the CPU 121a.

[0055] The I / O port 121d is connected to the above-mentioned MFCs 241a to 241d, valves 243a to 243d, pressure sensor 245, APC valve 244, vacuum pump 246, heater 207, temperature sensor 263, rotation mechanism 267, boat elevator 115, shutter opening / closing mechanism 115s, high-frequency power supply 320, etc.

[0056] The CPU 121a is configured to read and execute a control program from the storage device 121c, and to read a recipe from the storage device 121c in response to an input of an operation command from the input / output device 122. The CPU 121a is configured to be able to control the rotation mechanism 267, the flow rate adjustment operation of various gases by the MFCs 241a to 241d, the opening and closing operation of the valves 243a to 243d, the opening and closing operation of the APC valve 244 and the pressure adjustment operation by the APC valve 244 based on the pressure sensor 245, and the start and stop of the vacuum pump 246, in accordance with the contents of the read recipe. The CPU 121a is further configured to be able to control the temperature adjustment operation of the heater 207 based on the temperature sensor 263, the forward / reverse rotation of the boat 217 by the rotation mechanism 267, the rotation angle and rotation speed adjustment operation, the raising and lowering operation of the boat 217 by the boat elevator 115, the opening and closing operation of the shutter 219s by the shutter opening / closing mechanism 115s, and the power supply of the high-frequency power supply 320, all in accordance with the contents of the read recipe.

[0057] The controller 121 can be configured by installing the above-mentioned program stored in the external storage device 123 into a computer. The external storage device may be, for example, a magnetic disk such as a hard disk, an optical disk such as a CD, a magneto-optical disk such as an MO, or a semiconductor memory such as a USB memory. The storage device 121c and the external storage device 123 are configured as computer-readable recording media. Hereinafter, these will be collectively referred to as recording media. When the term recording media is used in this specification, it may include only the storage device 121c alone, only the external storage device 123 alone, or both. Note that the program may be provided to the computer using a communication means such as the Internet or a dedicated line, without using the external storage device 123.

[0058] (2) Substrate Processing Step An example of a process for forming a film on a substrate as one step in the manufacturing process of a semiconductor device using the above-described substrate processing apparatus will be described with reference to Fig. 7. In the following description, the operation of each part constituting the substrate processing apparatus is controlled by a controller 121.

[0059] 7 may be expressed as follows for convenience: Similar notations will be used in the following descriptions of modified examples and other embodiments.

[0060] (raw material gas → reactive gas) × n When the term "wafer" is used in this specification, it may mean the wafer itself or a laminate of the wafer and a predetermined layer, film, etc. formed on its surface. When the term "surface of a wafer" is used in this specification, it may mean the surface of the wafer itself or the surface of a predetermined layer, film, etc. formed on the wafer. When the term "substrate" is used in this specification, it is synonymous with the term "wafer".

[0061] (Loading step: S1) When a plurality of wafers 200 are loaded into the boat 217 (wafer charge), the shutter 219s is moved by the shutter opening / closing mechanism 115s to open the lower end opening of the manifold 209 (shutter open). Thereafter, as shown in FIG. 1 , the boat 217 supporting the plurality of wafers 200 is lifted by the boat elevator 115 and loaded into the processing chamber 201 (boat load). In this state, the seal cap 219 seals the lower end of the manifold 209 via the O-ring 220b.

[0062] (Pressure and temperature adjustment step: S2) The inside of the processing chamber 201 is evacuated (reduced pressure exhausted) by the vacuum pump 246 so that the inside of the processing chamber 201 reaches a desired pressure (vacuum level). At this time, the pressure inside the processing chamber 201 is measured by the pressure sensor 245, and the APC valve 244 is feedback-controlled (pressure adjustment) based on this measured pressure information. The vacuum pump 246 is kept in a constantly operating state at least until the film formation step described below is completed.

[0063] The inside of the processing chamber 201 is heated by the heater 207 to a desired temperature. At this time, the temperature is adjusted by feedback control of the power supply to the heater 207 based on temperature information detected by the temperature sensor 263 so that the inside of the processing chamber 201 has a desired temperature distribution. The inside of the processing chamber 201 is continuously heated by the heater 207 at least until a film formation step, which will be described later, is completed. However, if the film formation step is performed at a temperature below room temperature, the inside of the processing chamber 201 does not need to be heated by the heater 207. Note that if only processing is performed at such a temperature, the heater 207 is unnecessary and does not need to be installed in the substrate processing apparatus. In this case, the configuration of the substrate processing apparatus can be simplified.

[0064] Next, the rotation mechanism 267 starts to rotate the boat 217 and the wafers 200. The rotation mechanism 267 continues to rotate the boat 217 and the wafers 200 at least until the film forming step, which will be described later, is completed.

[0065] (Film Forming Steps: S3, S4, S5, S6) Thereafter, the film forming steps are performed by sequentially executing steps S3, S4, S5, and S6.

[0066] (Source Gas Supply Steps: S3, S4) In step S3, a source gas is supplied to the wafer 200 in the processing chamber 201.

[0067] The valve 243a is opened to allow the source gas to flow into the gas supply pipe 232a. The flow rate of the source gas is adjusted by the MFC 241a, and the source gas is supplied into the processing chamber 201 from the gas supply hole 250a via the nozzle 249a, and is exhausted from the exhaust pipe 231. At this time, the source gas is supplied to the wafer 200. At the same time, the valve 243c may be opened to allow an inert gas to flow into the gas supply pipe 232c. The flow rate of the inert gas is adjusted by the MFC 241c, and the inert gas is supplied into the processing chamber 201 together with the source gas, and is exhausted from the exhaust pipe 231.

[0068] In addition, in order to prevent the source gas from entering the nozzle 249 b, the valve 243 d may be opened to allow an inert gas to flow into the gas supply pipe 232 d. The inert gas is supplied into the processing chamber 201 via the gas supply pipe 232 d and the nozzle 249 b, and is exhausted from the exhaust pipe 231.

[0069] Examples of the processing conditions in this step include: processing temperature: room temperature (25° C.) to 550° C., preferably 400 to 500° C. processing pressure: 1 to 4000 Pa, preferably 100 to 1000 Pa raw material gas supply flow rate: 0.1 to 3 slm raw material gas supply time: 1 to 100 seconds, preferably 1 to 50 seconds inert gas supply flow rate (per gas supply pipe): 0 to 10 slm

[0070] In this specification, when a numerical range such as "25 to 550°C" is expressed, it means that the lower limit and the upper limit are included in the range. Therefore, for example, "25 to 550°C" means "25°C or higher and 550°C or lower." The same applies to other numerical ranges. In this specification, the processing temperature refers to the temperature of the wafer 200 or the temperature inside the processing chamber 201, and the processing pressure refers to the pressure inside the processing chamber 201. In addition, a gas supply flow rate of 0 slm means that the gas is not supplied. This also applies in the following description. When the supply flow rate includes 0 slm, 0 slm means that the substance (gas) is not supplied. This also applies in the following description.

[0071] By supplying the source gas to the wafer 200 under the above conditions, a first layer is formed on the wafer 200 (on the surface of the base film). For example, when a silicon (Si)-containing gas, which will be described later, is used as the source gas, a Si-containing layer is formed as the first layer.

[0072] After the first layer is formed, the valve 243a is closed to stop the supply of source gas into the processing chamber 201. At this time, the APC valve 244 is left open, and the processing chamber 201 is evacuated by the vacuum pump 246 to remove the source gas, reaction by-products, and the like remaining in the processing chamber 201 that have not reacted or that have contributed to the formation of the first layer (S4). Furthermore, the valves 243c and 243d are opened to supply an inert gas into the processing chamber 201. The inert gas acts as a purge gas.

[0073] The raw material may be, for example, monochlorosilane (SiH ３ Cl) gas, dichlorosilane (SiH ２ Cl ２ ) gas, trichlorosilane (SiHCl ３ ) gas, tetrachlorosilane (SiCl ４ ) gas, hexachlorodisilane (Si ２ Cl ６ ) gas, octachlorotrisilane (Si ３ Cl ８ ) gas, tetrafluorosilane (SiF ４ ) gas, difluorosilane (SiH ２ F ２ ) gas, tetrabromosilane (SiBr ４ ) gas, dibromosilane (SiH ２ Br ２ ) gas, tetraiodosilane (SiI ４ ) gas, diiodosilane (SiH ２ I ２ It is also possible to use an iodosilane-based gas such as a silane-based gas. That is, a halosilane-based gas can be used as the source gas. One or more of these can be used as the source gas.

[0074] The inert gas may be, for example, nitrogen (N ２ In this case, a rare gas such as argon (Ar) gas, helium (He) gas, neon (Ne) gas, or xenon (Xe) gas can be used. This also applies to the steps described below.

[0075] (Reactive Gas Supply Steps: S5, S6) After the film formation process is completed, plasma-excited reactive gas is supplied to the wafers 200 in the processing chamber 201 (S5).

[0076] In this step, the valves 243b to 243d are controlled to open and close in the same manner as the valves 243a, 243c, and 243d in step S3. The flow rate of the reactive gas is adjusted by the MFC 241b, and the reactive gas is supplied from the nozzle 249b to the gas supply hole 250b into the processing chamber 201. At this time, high-frequency power (RF power, in this embodiment, a frequency of 27.12 MHz) is supplied (applied) from the high-frequency power supply 320 to the electrode 300. The reactive gas supplied into the processing chamber 201 is excited into a plasma state inside the processing chamber 201, supplied to the wafer 200 as activated species, and exhausted from the exhaust pipe 231.

[0077] Examples of processing conditions in this step include: processing temperature: room temperature (25°C) to 550°C, preferably 400 to 500°C; processing pressure: 1 to 300 Pa, preferably 10 to 100 Pa; reactive gas supply flow rate: 0.1 to 10 slm; reactive gas supply time: 1 to 100 seconds, preferably 1 to 50 seconds; inert gas supply flow rate (per gas supply pipe): 0 to 10 slm; RF power: 50 to 1000 W; RF frequency: 27.12 MHz.

[0078] Under the above conditions, reactive gas is excited into a plasma state and supplied to the wafer 200, thereby generating activated species that are electrically neutral to the ions generated in the plasma. The activated species act to modify the first layer formed on the surface of the wafer 200, thereby modifying the first layer into a second layer.

[0079] When an oxidizing gas (oxidizer) such as an oxygen (O)-containing gas is used as the reactive gas, the O-containing gas is excited into a plasma state to generate O-containing active species, which are then supplied to the wafer 200. In this case, the action of the O-containing active species causes an oxidation treatment as a modification treatment to the first layer formed on the surface of the wafer 200. In this case, if the first layer is, for example, a Si-containing layer, the Si-containing layer as the first layer is modified into a silicon oxide layer (SiO layer) as the second layer.

[0080] Furthermore, when a nitriding gas (nitriding agent) such as a nitrogen (N) and hydrogen (H)-containing gas is used as the reactive gas, the N- and H-containing gas is excited into a plasma state to generate N- and H-containing active species. These N- and H-containing active species are supplied to the wafer 200. In this case, the N- and H-containing active species act to perform a nitriding process as a modification process on the first layer formed on the surface of the wafer 200. In this case, if the first layer is, for example, a Si-containing layer, the Si-containing layer as the first layer is modified into a silicon nitride layer (SiN layer) as the second layer.

[0081] After the first layer is modified into the second layer, the valve 243b is closed to stop the supply of the reactive gas, and the supply of high-frequency power to the electrode 300 is stopped. Then, the reactive gas and reaction by-products remaining in the processing chamber 201 are removed from the processing chamber 201 using the same processing procedures and conditions as in step S4 (S6).

[0082] As described above, for example, an O-containing gas or an N- and H-containing gas can be used as the reactive gas. For example, the O-containing gas can be oxygen (O ２ ) gas, nitrous oxide (N ２ O) gas, nitric oxide (NO) gas, nitrogen dioxide (NO ２ ) gas, ozone (O ３ ) gas, hydrogen peroxide (H ２ O ２ ) gas, water vapor (H ２ O), ammonium hydroxide (NH ４ (OH) gas, carbon monoxide (CO) gas, carbon dioxide (CO ２As the N and H-containing gas, ammonia (NH ３ ) gas, diazene (N ２ H ２ ) gas, hydrazine (N ２ H ４ ) gas, N ３ H ８ As the reactive gas, one or more of these gases can be used.

[0083] As the inert gas, for example, the various gases exemplified in step S4 can be used.

[0084] (Performance Predetermined Number of Times: S7) The above-described steps S3, S4, S5, and S6 are performed asynchronously, i.e., without synchronization, in this order, constituting one cycle. This cycle is performed a predetermined number of times (n times, where n is an integer greater than or equal to 1), i.e., one or more times, to form a film of a predetermined composition and a predetermined thickness on the wafer 200. It is preferable to repeat the above-described cycle multiple times. That is, it is preferable to set the thickness of the first layer formed per cycle to be smaller than the desired thickness, and repeat the above-described cycle multiple times until the thickness of the film formed by stacking the second layer reaches the desired thickness. Note that if, for example, a Si-containing layer is formed as the first layer and, for example, a SiO layer is formed as the second layer, a silicon oxide film (SiO film) is formed as the film. Also, if, for example, a Si-containing layer is formed as the first layer and, for example, a SiN layer is formed as the second layer, a silicon nitride film (SiN film) is formed as the film.

[0085] (Atmospheric pressure restoration step: S8) When the above-described film formation process is completed, an inert gas is supplied into the processing chamber 201 from each of the gas supply pipes 232c and 232d and exhausted from the exhaust pipe 231. As a result, the processing chamber 201 is purged with the inert gas, and the reaction gas remaining in the processing chamber 201 is removed from the processing chamber 201 (inert gas purge). Thereafter, the atmosphere in the processing chamber 201 is replaced with the inert gas (inert gas replacement), and the pressure in the processing chamber 201 is restored to normal pressure (atmospheric pressure restoration: S8).

[0086] (Unloading step: S9) Thereafter, the seal cap 219 is lowered by the boat elevator 115, and the lower end of the manifold 209 is opened. Then, the processed wafers 200, supported by the boat 217, are unloaded from the lower end of the manifold 209 to the outside of the reaction tube 203 (boat unloading). After the boat unloading, the shutter 219s is moved, and the lower end opening of the manifold 209 is sealed by the shutter 219s via the O-ring 220c (shutter close). After being unloaded to the outside of the reaction tube 203, the processed wafers 200 are removed from the boat 217 (wafer discharging). After the wafer discharging, an empty boat 217 may be loaded into the processing chamber 201.

[0087] (3) Effects of the Present Embodiment The electric field near the upper end of the electrode 300 is stronger than at other positions on the electrode 300, resulting in a biased electric field distribution in the vertical direction of the electrode 300. This biased electric field distribution also causes a bias in the density distribution of the plasma 302. Therefore, non-uniformity may appear between the wafers 200 in the film thickness and film quality, which are correlated with the density distribution of the plasma 302. This problem can be solved by making the electrode length sufficiently longer than the upper end of the substrate holding area SHA. However, increasing the electrode length increases electrode loss and increases the vertical dimension of the processing furnace 202.

[0088] In this embodiment, the lengths of the first electrode 300-1 and the second electrode 300-2 of each of the multiple electrode units are matched. The electrode unit 31 is configured with multiple electrode units of different lengths, and the heights (i.e., lengths) of the upper ends of the first electrode 300-1 and the second electrode 300-2 are adjusted to distribute the electrode ends, where the electric field is strong, within the substrate holding and processing area. This configuration improves the bias of the electric field distribution, and the electric field generated between the inner wall of the reaction tube 203 near the electrode 300 and the wafers 200 is uniformly and strongly distributed in the vertical direction (i.e., the direction in which the substrates are stacked). This increases the density of the plasma 302 and distributes it uniformly in the vertical direction, thereby improving the uniformity of the film thickness and film quality between the wafers 200.

[0089] (Modification 1) The electrodes used in the electrode units 31, 32 in Modification 1 of the embodiment will be described with reference to Fig. 8. In Modification 1, the electrode arrangement and electrode length of the electrode portion differ from those of the embodiment. Other configurations of Modification 1 are the same as those of the embodiment. Modification 1 also provides the same effects as those of the above-described embodiment.

[0090] Each of the electrode units 31 and 32 has nine sets of electrode sections, each consisting of one first electrode 300-1 and one second electrode 300-2. The nine sets of first to ninth electrode sections 300a to 300i are arranged in this order from the left side of FIG. 8. The first electrodes 300-1 and second electrodes 300-2 are arranged alternately. The number of first electrodes 300-1 and second electrodes 300-2 is not limited to one each, as long as they are equal in number.

[0091] In the electrode unit 31, the positions (heights) of the upper ends of the first electrodes 300-1 and second electrodes 300-2 of the electrode portions 300a to 300i are the same. The first electrodes 300-1 and second electrodes 300-2 of the electrode portions 300a to 300i extend from a position (H7) below the lower end of the substrate holding area SHA to a part of the substrate holding area SHA. In other words, the lengths of the first electrodes 300-1 and second electrodes 300-2 of the electrode portions 300a to 300i are the same. The heights decrease in the order of the electrode portions 300a to 300i.

[0092] The height of the upper ends of the first electrode 300-1 and the second electrode 300-2 of the first electrode section 300a of the electrode unit 31 is height H1, which is lower than the height H0 of the tips of the first electrode 300-1 and the second electrode 300-2 of the electrode unit 32. The height of the upper ends of the first electrode 300-1 and the second electrode 300-2 of the second electrode section 300b of the electrode unit 31 is lower than height H1 and higher than height H2. The height of the upper ends of the first electrode 300-1 and the second electrode 300-2 of the third electrode section 300c of the electrode unit 31 is lower than the height of the second electrode section 300b and higher than height H2.

[0093] The height of the upper ends of the first electrode 300-1 and the second electrode 300-2 of the fourth electrode section 300d of the electrode unit 31 is height H2. The height of the upper ends of the first electrode 300-1 and the second electrode 300-2 of the fifth electrode section 300e of the electrode unit 31 is lower than height H2 and higher than height H3. The height of the upper ends of the first electrode 300-1 and the second electrode 300-2 of the sixth electrode section 300f of the electrode unit 31 is lower than the height of the fifth electrode section 300e and higher than height H3.

[0094] The height of the upper ends of the first electrode 300-1 and the second electrode 300-2 of the seventh electrode portion 300g of the electrode unit 31 is H3. The height of the upper ends of the first electrode 300-1 and the second electrode 300-2 of the eighth electrode portion 300h of the electrode unit 31 is lower than H3 and higher than H4. The height of the upper ends of the first electrode 300-1 and the second electrode 300-2 of the ninth electrode portion 300i of the electrode unit 31 is H4.

[0095] In the electrode unit 32, the positions (heights) of the upper ends of the first electrodes 300-1 and second electrodes 300-2 of the electrode sections 300a to 300i are the same. The first electrodes 300-1 and second electrodes 300-2 of the electrode sections 300a to 300i extend from a position (H7) below the lower end of the substrate-holding area SHA to the upper end (H0) of the substrate-holding area SHA. In other words, the lengths of the first electrodes 300-1 and second electrodes 300-2 of the electrode sections 300a to 300i are the same.

[0096] (Modification 2) The electrodes used in the electrode units 31, 32 in Modification 2 of the embodiment will be described with reference to Fig. 9. In Modification 2, the electrode length of the electrode portion differs from that of the embodiment. Other configurations of Modification 2 are the same as those of the embodiment. Modification 2 also provides the same effects as those of the above-described embodiment.

[0097] The height of the upper ends of the first electrode 300-1 and the second electrode 300-2 of the first electrode section 300a of the electrode unit 31 is lower than the height of the tips of the first electrode 300-1 and the second electrode 300-2 of the first electrode section 300a of the electrode unit 32 and higher than height H2. The height of the upper ends of the first electrode 300-1 and the second electrode 300-2 of the second electrode section 300b of the electrode unit 31 is lower than height H2 and higher than height H3. The height of the upper ends of the first electrode 300-1 and the second electrode 300-2 of the third electrode section 300c of the electrode unit 31 is height H3.

[0098] The height of the upper ends of the first electrode 300-1 and the second electrode 300-2 of the fourth electrode portion 300d of the electrode unit 31 is lower than the height H3 and higher than the height H4. The height of the upper ends of the first electrode 300-1 and the second electrode 300-2 of the fifth electrode portion 300e of the electrode unit 31 is lower than the height H4 and higher than the height H5. The height of the upper ends of the first electrode 300-1 and the second electrode 300-2 of the sixth electrode portion 300f of the electrode unit 31 is lower than the height of the fifth electrode portion 300e and higher than the height H5.

[0099] In the electrode unit 32, the positions (heights) of the upper ends of the first electrode 300-1 and second electrode 300-2 of each of the electrode portions 300a to 300f are the same. The electrode portions 300a and 300b extend from a position (H7) below the bottom end of the substrate-holding area SHA to the middle of the area WH2 (between H1 and H2). The electrode portions 300c to 300f extend from a position (H7) below the bottom end of the substrate-holding area SHA to the top end (H0) of the substrate-holding area SHA. In other words, the lengths of the first electrode 300-1 and second electrode 300-2 of each of the electrode portions 300a and 300b are different from the lengths of the first electrode 300-1 and second electrode 300-2 of each of the electrode portions 300c to 300f. The length of the first electrode 300-1 and the second electrode 300-2 of the first electrode section 300a of the electrode unit 31 is shorter than the length of the first electrode 300-1 and the second electrode 300-2 of the electrode section 300a and the electrode section 300c of the electrode unit 32.

[0100] (Variation 3) The electrodes used in the electrode units 31, 32 in Variation 3 of the embodiment will be described using Figure 10. In Variation 3, the electrode length of the electrode portion differs from that of the embodiment, and conductors are provided in areas of the electrode unit 31 where there are no electrodes. Other configurations of Variation 3 are the same as those of the embodiment. Variation 3 also provides the same effects as those of the above-mentioned embodiment.

[0101] The height of the upper ends of the first electrodes 300-1 and second electrodes 300-2 of the first electrode portion 300a and second electrode portion 300b of the electrode unit 31 is lower than H1 and higher than H2. The height of the upper ends of the first electrodes 300-1 and second electrodes 300-2 of the third electrode portion 300c and fourth electrode portion 300d of the electrode unit 31 is equal to H2.

[0102] The height of the upper ends of the first electrode 300-1 and the second electrode 300-2 of the fifth electrode portion 300e of the electrode unit 31 is lower than the height H2 and higher than the height H3. The height of the upper ends of the first electrode 300-1 and the second electrode 300-2 of the sixth electrode portion 300f of the electrode unit 31 is the height H3. The height of the upper ends of the first electrode 300-1 and the second electrode 300-2 of the seventh electrode portion 300g of the electrode unit 31 is lower than the height H3 and higher than the height H4. The height of the upper ends of the first electrode 300-1 and the second electrode 300-2 of the eighth electrode portion 300h of the electrode unit 31 is lower than the height of the first electrode 300-1 and the second electrode 300-2 of the seventh electrode portion 300g and higher than the height H4. The height of the upper ends of the first electrode 300-1 and the second electrode 300-2 of the ninth electrode portion 300i of the electrode unit 31 is a height H4.

[0103] The electrode unit 31 has a shape in which the upper portions of the first electrode 300-1 and the second electrode 300-2 are removed from the electrode sections 300a to 300i of the electrode unit 32. In the areas where the upper portions of the first electrode 300-1 and the second electrode 300-2 are removed (i.e., the space where the electrodes are removed), a conductor 340 connected to a reference potential (e.g., earth) is installed at a distance from the first electrode 300-1 and the second electrode 300-2 that will prevent discharge. This makes it possible to reduce the effects of an unstable electromagnetic field in the space where the electrodes are removed.

[0104] Although the embodiments of the present disclosure have been specifically described above, the present disclosure is not limited to the above-described embodiments and can be modified in various ways without departing from the spirit and scope of the present disclosure.

[0105] In the above-described embodiment, for example, an example in which the reactants are supplied after the raw materials are supplied has been described. However, the present disclosure is not limited to this example, and the order in which the raw materials and reactants are supplied may be reversed. In other words, the raw materials may be supplied after the reactants are supplied. By changing the supply order, it is possible to change the film quality and composition ratio of the formed film.

[0106] The present disclosure is suitably applicable not only to the case of forming an SiO film or SiN film on the wafer 200, but also to the case of forming an Si-based oxide film such as a silicon oxycarbide film (SiOC film), a silicon oxycarbonitride film (SiOCN film), or a silicon oxynitride film (SiON film) on the wafer 200.

[0107] It is preferable that recipes used for film formation processes are individually prepared according to the process content and stored in the storage device 121c via an electric communication line or the external storage device 123. When starting various processes, it is preferable that the CPU 121a appropriately selects an appropriate recipe according to the process content from among the multiple recipes stored in the storage device 121c. This makes it possible to versatilely and reproducibly form thin films with various film types, composition ratios, film qualities, and film thicknesses using a single substrate processing device. It also reduces the burden on the operator, avoids operational errors, and enables various processes to be started quickly.

[0108] The above-mentioned recipes may not necessarily be newly created, but may be prepared by modifying an existing recipe already installed in the substrate processing apparatus. When modifying a recipe, the modified recipe may be installed in the substrate processing apparatus via an electric communication line or a recording medium on which the modified recipe is recorded. Alternatively, an existing recipe already installed in the substrate processing apparatus may be directly modified by operating the input / output device 122 provided in the existing substrate processing apparatus.

[0109] In the above-described embodiment, an example of forming a film using a batch-type substrate processing apparatus that processes multiple substrates at a time has been described. The present disclosure is not limited to the above-described embodiment and can be suitably applied, for example, to a case where a film is formed using a single-wafer substrate processing apparatus that processes one or several substrates at a time. Furthermore, in the above-described embodiment, an example of forming a film using a substrate processing apparatus having a hot-wall processing furnace has been described. The present disclosure is not limited to the above-described embodiment and can be suitably applied to a case where a film is formed using a substrate processing apparatus having a cold-wall processing furnace.

[0110] When using these substrate processing apparatuses, each process can be performed using the same processing procedures and conditions as in the above-described embodiments and modifications, and the same effects as in the above-described embodiments and modifications can be obtained.

[0111] The above-described embodiments and modifications may be used in combination as appropriate. The processing procedures and processing conditions in such a case may be the same as those of the above-described embodiments and modifications, for example.

[0112] 201: Processing chamber 31: Electrode unit 300: Electrode 300-1: First electrode (first electrode) 300-2: Second electrode (second electrode) 300a: First electrode section (first electrode section) 300b: Second electrode section (second electrode section) 300c: Third electrode section (third electrode section)

Claims

1. A substrate processing apparatus comprising: a processing chamber for processing a substrate; and a first electrode unit comprising: a first electrode section comprising a first electrode to which high frequency power is applied and a second electrode to which a reference potential is applied, the first electrode section comprising the first electrode and the second electrode having lengths different from those of the first electrode and the second electrode of the first electrode section; and a third electrode section comprising the first electrode and the second electrode of the first electrode section and the first electrode and the second electrode of the second electrode section having lengths different from those of the first electrode and the second electrode of the second electrode section.

2. The substrate processing apparatus according to claim 1, wherein the number of said first electrodes is equal to the number of said second electrodes.

3. The substrate processing apparatus according to claim 1, wherein the number of said first electrodes is different from the number of said second electrodes.

4. The substrate processing apparatus according to claim 3, wherein a plurality of the first electrodes are provided.

5. The substrate processing apparatus according to claim 3, wherein the first electrodes are arranged continuously.

6. A substrate processing apparatus as described in claim 1, wherein the length of the first electrode and the second electrode of the first electrode unit is longer than the length of the first electrode and the second electrode of the second electrode unit and the length of the first electrode and the second electrode of the third electrode unit.

7. A substrate processing apparatus as described in claim 1, wherein the length of the first electrode and the second electrode of the second electrode unit is shorter than the length of the first electrode and the second electrode of the first electrode unit and longer than the length of the first electrode and the second electrode of the third electrode unit.

8. A substrate processing apparatus as described in claim 1, wherein the length of the first electrode and the second electrode of the third electrode section is shorter than the length of the first electrode and the second electrode of the first electrode section and the length of the first electrode and the second electrode of the second electrode section.

9. The substrate processing apparatus according to claim 1, wherein the first electrode portion, the second electrode portion, and the third electrode portion are arranged in this order.

10. A substrate processing apparatus as described in claim 1, further comprising: a fourth electrode section having a first electrode to which high frequency power is applied and a second electrode to which a reference potential is applied, the first electrode and the second electrode being equal in length; and a second electrode section having a fifth electrode section having the first electrode and the second electrode being equal in length to the first electrode and the second electrode of the fourth electrode section.

11. A substrate processing apparatus as described in claim 1, further comprising: a fourth electrode section having a first electrode to which high frequency power is applied and a second electrode to which a reference potential is applied, the first electrode and the second electrode of the fourth electrode section having lengths different from each other; and a second electrode unit having a fifth electrode section having the first electrode and the second electrode of the fourth electrode section having lengths different from each other.

12. The substrate processing apparatus according to claim 10 or 11, wherein the number of the first electrodes and the number of the second electrodes are equal.

13. The substrate processing apparatus according to claim 10 or 11, wherein the number of the first electrodes is different from the number of the second electrodes.

14. The substrate processing apparatus according to claim 1, wherein the first electrode unit is provided outside the processing chamber.

15. The substrate processing apparatus according to claim 12, wherein the length of the first electrode and the second electrode of the first electrode unit is shorter than the length of the first electrode and the second electrode of the fourth electrode unit.

16. A substrate processing apparatus as described in claim 13, wherein the length of the first electrode and the second electrode of the first electrode unit is shorter than the length of the first electrode and the second electrode of the fourth electrode unit and the length of the first electrode and the second electrode of the fifth electrode unit.

17. A plasma generation device having a first electrode unit comprising: a first electrode section comprising a first electrode to which high frequency power is applied and a second electrode to which a reference potential is applied, the first electrode having the same length; a second electrode section comprising the first electrode and the second electrode having different lengths from the first electrode and the second electrode of the first electrode section; and a third electrode section comprising the first electrode and the second electrode of the first electrode section and the second electrode having different lengths from the first electrode and the second electrode of the second electrode section.

18. A substrate processing method comprising: a step of carrying a substrate into a processing chamber; and a step of generating plasma by a first electrode unit comprising: a first electrode section comprising a first electrode to which high frequency power is applied and a second electrode to which a reference potential is applied, the first electrode and the second electrode being equal in length; a second electrode section comprising the first electrode and the second electrode, the first electrode and the second electrode being different in length from the first electrode and the second electrode of the first electrode section; and a third electrode section comprising the first electrode and the second electrode of the first electrode section and the first electrode and the second electrode of the second electrode section being different in length from the first electrode and the second electrode of the second electrode section.

19. A method for manufacturing a semiconductor device, comprising the steps of: manufacturing a semiconductor device using a substrate processed by the substrate processing method according to claim 18; 20. A program that causes a substrate processing apparatus to execute, by a computer, the following procedures: a procedure for carrying a substrate into a processing chamber; and a procedure for generating plasma by a first electrode unit that includes a first electrode unit having a first electrode to which high-frequency power is applied and a second electrode to which a reference potential is applied, the first electrode unit having a first electrode and a second electrode of equal length, the first electrode and the second electrode of the first electrode unit being different in length from the first electrode and the second electrode of the first electrode unit; and a third electrode unit having the first electrode and the second electrode of the first electrode unit and the first electrode and the second electrode of the second electrode unit being different in length from the first electrode and the second electrode of the second electrode unit.

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