Substrate processing apparatus and substrate processing method using same

Abstract

A substrate processing apparatus according to an embodiment comprises: a process chamber providing a plurality of processing spaces separated from each other to simultaneously process a plurality of substrates; substrate support parts respectively provided in the processing spaces; gas injection parts for supplying process gas to the processing spaces; a plasma power supply unit for applying RF power to generate plasma atmospheres in the respective processing spaces; a control circuit unit that includes variable capacitors connected to the respective substrate support parts and controls the flow of the RF power; a detection sensor unit that measures the voltages and currents of the substrate support parts; and a control unit that adjusts the capacitor positions of variable capacitors on the basis of VI calculation values obtained by measuring the voltages and currents after the RF power is applied to gas injection parts.

Description

Substrate processing device and substrate processing method using the same

[0001] The present invention relates to a substrate processing device and a substrate processing method using the same.

[0002] Typically, semiconductor devices are manufactured by processing substrates through various processing steps in a vacuum-atmosphere substrate processing device. The substrate processing process may include, for example, placing the substrate in a process chamber and depositing or etching a thin film on the substrate. The substrate processing device may perform the substrate processing process by injecting a process gas onto the substrate through a gas injection unit and applying RF power to form plasma.

[0003] Recently, in order to increase the productivity of substrate processing, a multi-stage type substrate processing device that forms multiple processing spaces within a process chamber and processes multiple substrates simultaneously is being utilized.

[0004] However, in the case of a substrate processing device having multiple processing spaces formed as described above, an imbalance in RF power transmission may occur between the multiple processing spaces due to complex factors such as structural factors between the processing spaces and variations in hardware coupled to the process chamber. For example, there is a difference in the impedance values ​​of each of the multiple substrate supports installed within the multiple processing spaces. Accordingly, the RF power transmitted to the substrate supports may also differ, resulting in differences in the plasma environment formed within the processing spaces. In addition, an imbalance in the RF power transmission to the substrate between the processing spaces may occur, which may increase the quality variation of the thin films formed on the substrate, thereby lowering the reliability of the process.

[0005] According to one embodiment, the present invention provides a substrate processing device capable of forming a plurality of thin films having a uniform film quality by creating a uniform plasma environment, and a substrate processing method using the same.

[0006] A substrate processing device according to an embodiment includes a process chamber that forms a plurality of processing spaces that are distinct from each other to simultaneously process a plurality of substrates using plasma; a substrate support unit formed in each of the plurality of processing spaces and on which a substrate is placed; a gas injection unit that supplies a process gas to each of the plurality of processing spaces; a plasma power supply unit that applies RF power to the gas injection unit to form a plasma atmosphere inside each of the plurality of processing spaces; a control circuit unit that includes a variable capacitor connected to each of the substrate support units and controls a flow of the RF power provided from the plasma power supply unit; a detection sensor unit that measures a voltage and a current of the substrate support unit; and a control unit that applies the RF power to each of the gas injection units formed in the plurality of processing spaces through the plasma power supply unit, and then measures the voltage and current of the substrate support units installed in each of the processing spaces to derive a VI calculation value and corrects a capacitor position of a variable capacitor connected to each of the substrate support units using the VI calculation value.

[0007] According to one embodiment, the plasma power source can apply the RF power by including at least one of a low frequency RF power source, a high frequency RF power source, and an ultra-high frequency RF power source.

[0008] According to one embodiment, the detection sensor unit may include a voltage current sensor (VI sensor) each connected to the substrate support unit.

[0009] According to one embodiment, the control unit may correct the positions of the variable capacitors each connected to the substrate support unit by a method including: deriving the VI output value for each capacitor position of the variable capacitor installed for each processing space; comparing the VI output values ​​for each capacitor position to derive an individual maximum capacitor position of the variable capacitor indicating an individual maximum VI output value of the processing space; deriving an overall maximum capacitor position of a processing space indicating the highest VI output value among the plurality of processing spaces, and comparing the overall maximum capacitor position with the individual maximum capacitor positions of the remaining processing spaces to respectively calculate individual capacitor position deviations of the remaining processing spaces; and correcting the positions of the variable capacitors each connected to the substrate support unit using the individual capacitor position deviations and the reference capacitor positions.

[0010] According to one embodiment, the step of correcting the position of the variable capacitor may correct the capacitor position for the variable capacitor of the remaining processing spaces except for the processing space showing the highest VI output value among the plurality of processing spaces.

[0011] According to one embodiment, the step of correcting the position of the variable capacitor may correct the capacitor position for the variable capacitor in a processing space in which the individual capacitor position deviation among the remaining processing spaces exceeds a preset range.

[0012] According to one embodiment, the reference capacitor position may represent a different value for each recipe of a substrate processing process to be performed in the plurality of processing spaces.

[0013] According to one embodiment, the total maximum capacitor position of the processing space means the process maximum efficiency point of the substrate processing process to be performed in the plurality of processing spaces.

[0014] According to one embodiment, the control unit may derive the VI output value while controlling the operation of the gas injection unit, the plasma power supply unit, and the control circuit unit under the same conditions as the recipe of the substrate processing process before performing a preset substrate processing process in the plurality of processing spaces, and may correct the capacitor position of the variable capacitor connected to each of the plurality of processing spaces using the derived VI output value.

[0015] A substrate processing method according to an embodiment is performed using the substrate processing device described above, and includes the steps of: applying RF power to form plasma in each of a plurality of processing spaces; measuring voltage and current of the substrate support portions installed in each of the plurality of processing spaces to derive a VI output value; correcting a capacitor position of a variable capacitor connected to each of the substrate support portions using the VI output value; and performing a substrate processing process using the substrate processing device.

[0016] According to an embodiment, a substrate processing device forms plasma in advance under the same recipe conditions as the substrate processing process in a step before performing a substrate processing process, measures voltage and current by RF power flowing into a substrate support to derive VI output values ​​for a plurality of processing spaces, and changes the capacitor positions of a variable capacitor for the remaining processing spaces based on the processing space showing the maximum VI output value, thereby enabling the creation of a uniform plasma environment, thereby forming a plurality of thin films having a uniform film quality.

[0017] Fig. 1 is a cross-sectional view showing a substrate processing device according to an embodiment.

[0018] Figure 2 is a process diagram showing a substrate processing method according to an embodiment.

[0019] FIG. 3 is a result of deriving a VI output value while changing the variable capacitor position for each processing space during a process of depositing a silicon nitride film on a substrate for each processing space using a substrate processing device having a plurality of processing spaces formed according to one embodiment.

[0020] FIG. 4 is a result of measuring the deposition rate of a silicon nitride film for each capacitor position of the processing space by depositing a silicon nitride film on a substrate for each processing space using a substrate processing device having a plurality of processing spaces formed according to one embodiment.

[0021] FIG. 5 is a result of measuring the stress of a silicon nitride film for each capacitor position in a processing space by depositing a silicon nitride film on a substrate for each processing space using a substrate processing device having a plurality of processing spaces formed according to one embodiment.

[0022] FIG. 6 is a graph showing the trends of voltage and current calculated using (a) the VI output value of the first processing space and (b) the VI output value of the third processing space, calculated for changing the variable capacitor position before silicon nitride film deposition according to an embodiment.

[0023] Fig. 1 is a cross-sectional view showing a substrate processing device according to an embodiment.

[0024] Referring to FIG. 1, a substrate processing device according to an embodiment may include a process chamber (110), a plurality of gas injection units (120), a plurality of substrate supports (130), and a plasma power source (140).

[0025] The process chamber (110) may have a plurality of processing spaces (112) formed therein. For example, the processing spaces (112) may be spaced apart from each other inside the process chamber (110). The processing spaces (112) may have substantially the same structure or a similar structure. The processing spaces (112) may define a sealed processing space for processing a plurality of substrates (S). The processing spaces (112) may be arranged inside the process chamber (110) so as to be in communication with each other. In FIG. 1, in order to explain the plurality of processing spaces (112), a structure in which processing spaces (112) are formed on the left and right sides of the process chamber (110) is illustrated, but the number of the processing spaces (112) is not limited thereto.

[0026] The above process chamber (110) may have a multi-stage structure in which at least two processing spaces (112) are formed inside. The number of the processing spaces (112) may be appropriately selected in consideration of productivity and process uniformity.

[0027] The above processing spaces (112) may be arranged within the process chamber (110) to share at least some of the external utilities. For example, the processing spaces (112) may be arranged in a matrix form or in a row.

[0028] The above process chamber (110) is configured to maintain airtightness as a whole, and may have a structure in which an entrance is formed for loading a plurality of substrates (S) into or unloading them from the processing spaces (112), and a gate (not shown) is formed on one side for opening and closing the entrance.

[0029] The above process chamber (110) may have various shapes. For example, the process chamber (110) may have a structure including a side wall portion and an upper lid (115) positioned at the upper end of the side wall portion.

[0030] In addition, the process chamber (110) may be connected to an exhaust port (not shown) at the bottom of the processing spaces (112). The process gas within the processing spaces (112) may be exhausted through the exhaust port. The exhaust port may have a structure in which a vacuum pump (not shown) for controlling the vacuum level within the processing spaces (112) is connected.

[0031] The plurality of gas injection units (120) may be installed in the process chamber (110) to inject process gas into the processing spaces (112). For example, the gas injection units (120) may be installed in the process chamber (110) to face the plurality of substrate support units (130). Each of the plurality of gas injection units (120) may be installed on the upper portion of the process chamber (110) constituting the processing spaces (112) to inject process gas onto the substrate (S) mounted on the respective substrate support unit (130).

[0032] For example, the plurality of gas injection units (120) may each have a structure including an inlet through which a process gas is introduced, a blocker plate for dispersing the process gas passing through the inlet, and a distribution plate for injecting the process gas into the reaction space (112). The structure of the gas injection units (120) may be modified in various ways and is not limited to the structure described above.

[0033] More specifically, the gas injection units (120) may have various shapes, such as a shower head, a nozzle, etc. When the gas injection units (120) are in the shape of a shower head, the gas injection units (120) may be respectively coupled to the process chamber (110) in a shape that partially covers the upper portion of the process chamber (110). In particular, the gas injection units (120) may be spaced apart from each other on the cover or side wall of the process chamber (110).

[0034] The above gas injection units (120) may each be connected to a gas supply line for supplying process gas. Multiple gas supply lines may be installed depending on the type of process gas. When multiple gas supply lines are installed as described above, each gas supply line may branch and be connected to the gas injection units (120). Furthermore, without limitation thereto, each gas supply line may have a structure in which it is separately connected to the gas injection units (120).

[0035] The above-described plurality of substrate supports (130) may be installed in the process chamber (110) to support a plurality of substrates (S) within the processing spaces (112), respectively. For example, the above-described substrate supports (130) may be installed in the process chamber (110) facing the gas injection units (120), respectively.

[0036] The above-described plurality of substrate supports (130) may each include a flat-shaped mounting plate (131) that provides a space for mounting a substrate (S), and a driving shaft (133) that is connected to the lower portion of the mounting plate (131) and moves up and down by an upper and lower driving unit (not shown).

[0037] In addition, each of the plurality of substrate supports (130) may include a heating heater (135) for heating the substrate (S) therein. The heating heater (135) is installed in the substrate support (130) and may have various configurations to heat the substrate (S) mounted on the substrate supports (130). The heating heater (135) may be connected to a heater power supply (150) that applies direct current or alternating current power to form a structure that controls the temperature of the substrate (S). An RF filter (151) for filtering RF noise may be interposed between the heating heater (135) and the heater power supply (150).

[0038] Since the above-described plurality of substrate support members (130) are configured so that a substrate (S) is mounted on each of the upper portions, they may also be called substrate mounting members, susceptors, etc.

[0039] In addition, RF electrodes (137) for receiving RF power may be installed within each of the plurality of substrate supports (130). RF power transmitted from the process chamber (110) to the gas injection units (120) may be induced to the ground through the RF electrodes (137). In this respect, each RF electrode (135) may be referred to as a ground electrode. In some embodiments, the RF electrodes (137) may be used as electrostatic electrodes for fixing the substrate (S) onto the substrate supports (130). In this case, a chuck power supply may be connected to each RF electrode (137) so as to be branched from the ground.

[0040] The plurality of plasma power sources (140) may be connected to the gas injection units (120) to supply RF power for forming a plasma atmosphere in the reaction spaces (112) within the process chamber (110), respectively. For example, the plasma power sources (140) may include at least one RF power source (141a, 141b) to apply at least one RF (radio frequency) power source to the corresponding processing space (112). In particular, the RF power sources (141a, 141b) may be connected to apply RF power to the corresponding gas injection units (120), and in this case, each gas injection unit (120) may be referred to as a power supply electrode or an upper electrode.

[0041] According to one embodiment, the plasma power supply units (140) may be configured to selectively apply an RF power suitable for performing substrate processing, including at least one of a low frequency RF power supply, a high frequency RF power supply, and an ultra-high frequency RF power supply. Specifically, the low frequency RF power supply may have a frequency range of 100 kHz to 5 MHz. The high frequency RF power supply may have a frequency range of 5 MHz to 40 MHz. The ultra-high frequency RF power supply may have a frequency range of 40 MHz to 70 MHz.

[0042] The plasma power supply units (140) may have a structure in which an impedance matching module (143) is connected to each of the power supply lines connected to the gas injection units (120). The RF power supplied from the plasma power supply unit (140) may be appropriately impedance-matched through the corresponding impedance matching module (143) between each plasma power supply unit (140) and each gas injection unit (120), and in this case, the RF power may be effectively transmitted to the process chamber (110) without being reflected and returned from the process chamber (110).

[0043] To this end, the impedance matching module (143) may be configured as a series or parallel combination of two or more selected from the group of resistors, inductors, and capacitors. Furthermore, each of the impedance matching modules (143) may adopt at least one variable capacitor or capacitor array switching structure so that the impedance value can be varied according to the frequency of the RF power and process conditions.

[0044] A substrate processing device according to an embodiment may have a structure in which a plurality of control circuit units (160) are formed. The plurality of control circuit units (160) may be respectively connected to RF electrodes (137) in the substrate supports (130). The control circuit units (160) may be connected between the RF electrode (137) and a ground so as to adjust impedance matching between the RF power (141a, 141b) provided through the gas injection units (120) and the substrate supports (130). Accordingly, the control values ​​of the control circuit units (160) may be adjusted so as to adjust impedance matching of the RF power between the gas injection unit (120) and the substrate supports (130).

[0045] For example, each of the control circuit units (160) may include at least one variable capacitor (VC). The control circuit units (160) are controlled by the control unit (180), and the capacitor position of the variable capacitor (VC) may be changed to change the actual impedance of the substrate support units (130) viewed from the gas injection unit (120). In this case, the control value of the control circuit units (160) may be the capacitor position of the variable capacitor (VC). The capacitor position may mean a capacitance value.

[0046] Specifically, the capacitor position of the variable capacitor (VC) can be changed to continuously change the electrostatic capacitance by changing the electrode position, or can be changed to multi-stage electrostatic capacitance by operating axis in a multi-stage structure.

[0047] According to one embodiment, the control circuits (160) may also function as a filter that passes RF power received by the RF electrodes (137). For example, the control circuits (160) may be connected to an RF filter (not shown) so as to pass at least one of low-frequency RF power, high-frequency RF power, and ultra-high-frequency RF power received by the RF electrodes (137).

[0048] More specifically, the control circuits (160) may have a structure further including a variable capacitor (VC), an inductor, and a fixed capacitor.

[0049] The above detection sensor unit (170) is installed on one side of the substrate support unit (130) and serves to measure the voltage (V) and current (I) of the substrate support unit (130) and transmit the measured values ​​to the control unit (180). The detection sensor unit (170) can be implemented using a voltage current sensor (VI sensor) each connected to the substrate support unit (130).

[0050] In the substrate processing device according to the embodiment, the control unit (180) may control the control circuit units (160) to reduce process deviation between a plurality of processing spaces (112) during the process of performing a substrate processing process. To this end, the control unit (180) may apply the RF power to the gas injection units (120) respectively formed in the plurality of processing spaces (112) through the plasma power supply unit (140), then measure the voltage and current of the substrate support unit (130) to derive a VI calculation value, and control the control circuit units (160) to correct the capacitor positions of the variable capacitors (VC) respectively connected to the substrate support unit (130) using the VI calculation value. At this time, the VI calculation value may be calculated by multiplying the voltage and current for each capacitor position measured in the substrate support unit (130).

[0051] Specifically, the control unit (180) derives the VI output value for each capacitor position of the variable capacitor (VC) installed in each processing space (112). That is, the control unit (180) controls the variable capacitor (VC) to change the capacitor position, while measuring the voltage and current from the detection sensor unit (170), and can continuously collect the VI output value.

[0052] In addition, the control unit (180) compares the VI output values ​​for each capacitor position to derive the individual maximum capacitor position (IMCP) of the variable capacitor (VC) representing the individual maximum VI output value of the processing space (112). Such individual maximum capacitor positions (IMCP) are derived from each of the plurality of processing spaces (112).

[0053] In addition, the control unit (180) derives the total maximum capacitor position (TMCP) of the processing space (112) indicating the highest VI output value among the plurality of processing spaces (112). Thereafter, the total maximum capacitor position (TMCP) is compared with the individual maximum capacitor positions (IMCP) of the remaining processing spaces (112) to derive the individual capacitor position deviations of the remaining processing spaces (112). At this time, the total maximum capacitor position (TMCP) of the processing space (112) means the process maximum efficiency point of the substrate processing to be performed in the plurality of processing spaces.

[0054] For reference, the individual maximum capacitor position (IMCP) refers to a capacitor position that exhibits the highest VI output value among the VI output values ​​collected for each capacitor position in the substrate support (130) installed in any one of the plurality of processing spaces (112). In addition, the overall maximum capacitor position (TMCP) refers to a capacitor position that exhibits the highest VI output value among all the individual capacitor positions collected in the plurality of processing spaces (112).

[0055] Next, the control unit (180) corrects the positions of the variable capacitors each connected to the substrate support (130) using the individual capacitor position deviation and the reference capacitor position. That is, the control unit (180) can correct the positions of the variable capacitors using the individual capacitor position deviation and the reference capacitor position. Accordingly, the control unit (180) can correct the capacitor positions for the variable capacitors (VC) of the remaining processing spaces (112) so as to have the same or similar trend or VI output slope as the processing space (112) showing the maximum VI output value. At this time, the control unit (180) corrects the capacitor positions for the variable capacitors (VC) of the remaining processing spaces (112) except for the processing space (112) showing the highest VI output value among the plurality of processing spaces (112).

[0056] The above reference capacitor position has different values ​​for each recipe of the substrate processing process to be performed in the plurality of processing spaces (112). The above reference capacitor position may be a suitable recipe condition for performing the substrate processing process.

[0057] In addition, the control unit (180) can control to correct the capacitor position of the variable capacitor (VC) of the processing space (112) among the remaining processing spaces (112) in which the individual capacitor position deviation exceeds a preset range. That is, the control unit (180) may not correct the variable capacitor (VC) of the processing space (112) in which the deviation is not large. At the same time, the control unit (180) can control to correct the capacitor position only of the processing space (112) in which the deviation is large. The control unit (180) can set the deviation range for the capacitor position correction in various ways as needed. For example, when there is a processing space in which the variable capacitor position deviation is 4% or more, the control unit (180) can perform the variable capacitor (VC) for the corresponding processing space. The preset range is not limited to 4%, and the control unit can set the range in various ways, such as 5% or 10%.

[0058] The capacitor position correction of the variable capacitor (VC) of the processing space as described above is performed by controlling the operation of the gas injection unit (120), the plasma power supply unit (140), and the control circuit unit (160) under the same conditions as the recipe of the substrate processing process before performing the preset substrate processing process in the plurality of processing spaces (112), and then using the derived VI calculation value, correcting the capacitor position of the variable capacitor (VC) connected to each of the plurality of processing spaces (112). Accordingly, the process deviation of the substrate processing process performed individually in each of the plurality of processing spaces can be reduced.

[0059] Meanwhile, Fig. 2 is a process diagram showing a substrate processing method according to an embodiment.

[0060] Referring to FIG. 2, a substrate processing method according to an embodiment includes a step (S100) of forming plasma in each of a plurality of processing spaces (112); a step (S200) of deriving a VI output value; a step (S300) of correcting a capacitor position of a variable capacitor (VC); and a step (S400) of performing a substrate processing process using the substrate processing device.

[0061] In the step (S100) of forming plasma in each of the above processing spaces, RF power is applied to form plasma in each of the plurality of processing spaces (112).

[0062] In this step, before performing the substrate processing process, the plasma can be formed by applying RF power to each of the gas injection units (120) formed in the plurality of processing spaces (112) under the same conditions as the recipe of the substrate processing process. That is, when performing the substrate processing process for depositing a silicon nitride film on a substrate, the plasma can be formed in each of the plurality of processing spaces (112) by applying RF power under the same conditions.

[0063] In the step (S200) of deriving the VI output value, the voltage and current of the substrate support member (130) installed in each of the plurality of processing spaces (112) are measured to derive the VI output value.

[0064] In this step, the VI output value can be derived for each capacitor position of the variable capacitor (VC) installed in each processing space (112). That is, while changing the capacitor position of the variable capacitor (VC), the voltage and current of the substrate support (130) can be measured, and the VI output value can be continuously collected.

[0065] In the step (S300) of correcting the capacitor position of the above variable capacitor (VC), the capacitor position of the variable capacitors each connected to the substrate support is corrected using the VI output value.

[0066] In this step, the VI output values ​​for each capacitor position are compared to derive the individual maximum capacitor position (IMCP) of the variable capacitor (VC) representing the individual maximum VI output value of the processing space (112). Such individual maximum capacitor positions (IMCP) are derived from all of the plurality of processing spaces (112). Then, the overall maximum capacitor position (TMCP) of the processing space (112) representing the highest VI output value among the plurality of processing spaces (112) is derived. Thereafter, the overall maximum capacitor position (TMCP) and the individual maximum capacitor positions (IMCP) of the remaining processing spaces (112) are compared to derive the individual capacitor position deviations of the remaining processing spaces (112). At this time, the overall maximum capacitor position (TMCP) of the processing space (112) means the process maximum efficiency point of the substrate processing process to be performed in the plurality of processing spaces (112).

[0067] Next, the positions of the variable capacitors each connected to the substrate support (130) are corrected using the individual capacitor position deviation and the reference capacitor position. At this time, the control unit (180) corrects the capacitor positions for the variable capacitors (VC) of the remaining processing spaces (112) except for the processing space (112) showing the highest VI output value among the plurality of processing spaces (112). At this time, the reference capacitor position has a different value for each recipe of the substrate processing process to be performed in the plurality of processing spaces (112). The reference capacitor position may be an appropriate recipe condition for performing the substrate processing process.

[0068] In this step, the capacitor positions of the variable capacitors (VC) of the processing spaces (112) whose individual capacitor position deviations exceed a preset range among the remaining processing spaces (112) excluding the processing spaces (112) indicating the maximum VI output value (total maximum capacitor position (TMCP)) can be corrected. That is, in this step, the variable capacitors (VC) of the processing spaces (112) whose deviations are not large may not be corrected, and only the processing spaces (112) whose deviations are large may be corrected for the capacitor positions.

[0069] In the step (S400) of performing a substrate processing process using the above substrate processing device, the substrate can be processed under the same recipe conditions as the step of forming plasma in each of the plurality of processing spaces. The substrate processing is only exemplified by thin film deposition, but is not limited thereto, and may be various substrate processing processes for forming plasma in the processing space (112) to process the substrate.

[0070] The substrate processing device according to the above-described embodiment forms plasma in advance with the same recipe conditions as the substrate processing process in a step prior to performing the substrate processing process, measures voltage and current by RF power flowing into the substrate support member (130), derives VI output values ​​for each of a plurality of processing spaces (112), and changes the capacitor position of a variable capacitor (VC) for the remaining processing spaces (112) based on the processing space showing the maximum VI output value, thereby enabling the creation of a uniform plasma environment, thereby forming a plurality of thin films having a uniform film quality.

[0071] Hereinafter, the present invention will be described in more detail by way of examples.

[0072] The presented examples are only specific examples of the present invention and are not intended to limit the technical scope of the present invention.

[0073] <Reference example>

[0074] A silicon nitride film deposition process was performed on a substrate using a substrate processing device according to an embodiment. The substrate processing device utilized a process chamber having a multi-stage structure in which four processing spaces (STG1, STG2, STG3, STG4) were formed. At this time, in order to evaluate the influence of the VI output value for each of the multiple processing spaces (STG1, STG2, STG3, STG4) on the substrate processing process, a silicon nitride film was deposited on the substrate and the VI output value was derived while changing the variable capacitor position of the substrate support, and the result is shown in Fig. 3.

[0075] In addition, the deposition rate of the silicon nitride film was measured for each capacitor position and shown in Fig. 4, and the stress of the silicon nitride film was measured for each capacitor position of the substrate support and shown in Fig. 5.

[0076] As shown in FIGS. 3 to 5, it was confirmed that the thin film deposition rate showed a trend similar to the derived VI calculation value and was proportional. In particular, in the case of the fourth processing space (STG4) as confirmed through FIG. 3(d), it was confirmed that the capacitor position confirmed through the VI calculation value showed a deviation of 4% from the capacitor positions of the remaining processing spaces (STG1, STG2, STG3). Based on the above results, it was determined that the fourth processing space (STG4) would show the maximum efficiency at a different capacitor position than the remaining processing spaces (STG1, STG2, STG3). That is, while the remaining processing spaces (STG1, STG2, STG3) showed the maximum efficiency around 50%, it was confirmed that the fourth processing space (STG4) showed the maximum efficiency around 46%.

[0077] Additionally, it was confirmed that stress showed a trend inversely proportional to the derived VI output value.

[0078] Through the above results, it was determined that the deviation in the substrate processing process could be reduced by correcting the position of the variable capacitor through the capacitor position confirmed through the VI output value.

[0079] <Example>

[0080] Before performing a silicon nitride film deposition process on a substrate using a substrate processing device according to an embodiment, a process was performed to correct the positions of a plurality of variable capacitors each connected to a substrate support. At this time, the substrate processing device utilized a process chamber having a multi-stage structure in which four processing spaces (STG1, STG2, STG3, STG4) were formed.

[0081] The process for correcting the position of the above-mentioned variable capacitor was performed in the following manner. First, RF power was supplied to the substrate processing device without a substrate under the same conditions as the silicon nitride film deposition process to form plasma, and the voltage and current of the substrate support portions installed in each processing space (STG1, STG2, STG3, STG4) were measured to derive VI values ​​for each capacitor position of the above-mentioned variable capacitors installed in each processing space (STG1, STG2, STG3, STG4), and the results are shown in Table 1 below.

[0082] Next, the derived VI output values ​​were compared to derive the processing space (STG1, STG2, STG3, STG4) with the highest VI output value among the variable capacitors installed in the processing space.

[0083]

[0084] As a result, referring to Table 1, it was confirmed that the first processing space showed the highest VI output value, and as a result of checking the capacitor position, it was confirmed that the maximum VI output value appeared at 51%.

[0085] In addition, when comparing the VI output values ​​for the remaining processing spaces (STG2, STG3, STG4), it was confirmed that the maximum VI output value appeared at 51% of the capacitor position in the second processing space (STG2). In the third processing space (STG3), it was confirmed that the maximum VI output value appeared at 47% of the capacitor position. And, in the fourth processing space (STG4), it was confirmed that the maximum VI output value appeared at 49% of the capacitor position.

[0086] It was confirmed that among the above processing spaces (STG1, STG2, STG3, STG4), the first processing space with the highest VI output value and among the remaining processing spaces (STG2, STG3, STG4), the processing space with the largest capacitor position deviation from the first processing space was the third processing space (STG3). In addition, it was confirmed that the capacitor position deviation of the first processing space (STG1) and the third processing space (STG3) was 4%, which exceeded 3%. In addition, it was confirmed that the capacitor position of the second processing space (STG2) was the same as that of the first processing space (STG4), and the capacitor position of the fourth processing space (STG4) showed a deviation of 2%, which was less than 3%. Accordingly, the position of the variable capacitor installed in the third processing space (STG3), where the capacitor position deviation exceeds a preset reference range, was corrected. The position correction of the variable capacitor installed in the third processing space (STG3) can be performed using the following Equation 1.

[0087] [Formula 1]

[0088] Position compensation of variable capacitor = (Capacitor position in processing space requiring capacitor position compensation - Capacitor position in processing space representing maximum VI output) + Reference capacitor position by recipe

[0089] As a result of performing position correction of the variable capacitor installed in the third processing space (STG3) using the above equation 1, the position of the variable capacitor installed in the third processing space (STG3) was selected as 39% by calculating 47%, which is the capacitor position of the processing space requiring capacitor position correction, 51%, which is the capacitor position of the first processing space indicating the maximum VI output value, and 43%, which is the standard capacitor position by recipe (47% - 51% + 43% = 39%).

[0090] FIG. 6 is a graph showing the trends of voltage and current calculated using (a) the VI output value of the first processing space and (b) the VI output value of the third processing space, calculated for changing the variable capacitor position before silicon nitride film deposition according to an embodiment.

[0091] Referring to FIG. 6, in the substrate processing device according to the embodiment, the maximum VI output value is used as a reference, and the difference between the variable capacitor position and the processing spaces (STG1, STG2, STG3, STG4) is corrected through position compensation so that the processing space (STG1) showing the maximum efficiency and the remaining processing spaces (STG2, STG3, STG4) can exhibit the same slope, thereby reducing the deviation. Accordingly, a uniform substrate processing process can be performed for each processing space (STG1, STG2, STG3, STG4). At this time, the variable capacitor position correction is performed only for the processing spaces in which the capacitor position deviation exceeds a preset range.

[0092] [Explanation of symbols]

[0093] 110: Process chamber 112: Processing space

[0094] 115: Upper lead 120: Gas injection part

[0095] 130: substrate support 131: mounting plate

[0096] 133: Drive shaft 135: Heating heater

[0097] 137: RF electrode 140: Plasma power supply

[0098] 141a,b: RF power supply 143: Impedance matching module

[0099] 150: Heater power supply 151: RF filter

[0100] 160: Control circuit section 170: Detection sensor section

[0101] 180: Control unit S: Circuit board

[0102] VC: Variable capacitor

[0103] The substrate processing device according to the embodiment can be utilized in the semiconductor manufacturing industry because it can simultaneously form multiple thin films having uniform film properties by creating a uniform plasma environment in each of multiple processing spaces.

Claims

1. A process chamber that forms multiple distinct processing spaces to simultaneously process multiple substrates using plasma; A substrate support formed in each of the plurality of processing spaces and on which a substrate is mounted; A gas injection unit that supplies process gas to each of the plurality of processing spaces; A plasma power supply unit that applies RF power to the gas injection unit to form a plasma atmosphere within each of the plurality of processing spaces; A control circuit unit including variable capacitors each connected to the substrate support, and controlling the flow of RF power provided from the plasma power supply unit; A detection sensor unit for measuring the voltage and current of the above substrate support; and A substrate processing device including a control unit that applies RF power to each of the gas injection units formed in the plurality of processing spaces through the plasma power unit, then measures the voltage and current of the substrate support unit installed in each of the processing spaces to derive a VI output value, and corrects the capacitor position of the variable capacitor connected to each of the substrate support units using the VI output value.

2. In paragraph 1, The above plasma power supply unit, A substrate processing device characterized in that it applies RF power including at least one of a low frequency RF power, a high frequency RF power, and an ultra-high frequency RF power.

3. In paragraph 1, The above detection sensor part, A substrate processing device characterized by including a voltage current sensor (VI sensor) connected to each of the substrate supports.

4. In paragraph 1, The above control unit, A step of deriving the VI output value for each capacitor position of the variable capacitor installed for each processing space; A step of comparing the VI output values ​​for each capacitor position to derive an individual maximum capacitor position of the variable capacitor representing the individual maximum VI output value of the processing space; A step of deriving the overall maximum capacitor position of a processing space indicating the highest VI output value among the plurality of processing spaces, and comparing the overall maximum capacitor position with the individual maximum capacitor positions of the remaining processing spaces to respectively calculate the individual capacitor position deviations of the remaining processing spaces; and A substrate processing device characterized in that the position of the variable capacitors each connected to the substrate support is corrected by a method including a step of correcting the position of the variable capacitors each connected to the substrate support using the individual capacitor position deviation and the reference capacitor position.

5. In paragraph 4, The step of correcting the position of the above variable capacitor is: A substrate processing device characterized in that it corrects the capacitor position for the variable capacitor of the remaining processing spaces except for the processing space showing the highest VI output value among the plurality of processing spaces.

6. In paragraph 4, The step of correcting the position of the above variable capacitor is: A substrate processing device characterized in that the capacitor position for a variable capacitor in a processing space in which the individual capacitor position deviation among the remaining processing spaces exceeds a preset range is corrected.

7. In paragraph 4, The above reference capacitor position is, A substrate processing device characterized in that it has different values ​​for each recipe of a substrate processing process to be performed in the above-mentioned multiple processing spaces.

8. In paragraph 4, The total maximum capacitor position of the above processing space is: A substrate processing device characterized by a point of maximum process efficiency of a substrate processing process to be performed in the above-mentioned multiple processing spaces.

9. In paragraph 1, The above control unit, A substrate processing device characterized in that, before performing a preset substrate processing process in the plurality of processing spaces, the VI output value is derived while controlling the operation of the gas injection unit, the plasma power supply unit, and the control circuit unit under the same conditions as the recipe of the substrate processing process, and the capacitor position of the variable capacitor connected to each of the plurality of processing spaces is corrected using the derived VI output value.

10. In a substrate processing method using a substrate processing device described in any one of claims 1 to 9, A step of forming plasma in each of a plurality of processing spaces by applying RF power; A step of measuring the voltage and current of the substrate support installed in each of the plurality of processing spaces to derive a VI output value; A step of correcting the capacitor position of each variable capacitor connected to the substrate support using the above VI output value; and A substrate processing method comprising a step of performing a substrate processing process using the above substrate processing device.

11. In paragraph 10, The step of deriving the above VI output value is: A substrate processing method characterized in that the VI output value is derived for each capacitor position of the variable capacitor installed for each processing space.

12. In paragraph 11, The step of correcting the position of the above variable capacitor is: A step of comparing the VI output values ​​for each capacitor position to derive an individual maximum capacitor position of the variable capacitor representing the individual maximum VI output value of the processing space; A step of deriving the overall maximum capacitor position of the processing space having the highest VI output value among the above processing spaces, and comparing the overall maximum capacitor position with the individual maximum capacitor positions of the remaining processing spaces to respectively calculate the individual capacitor position deviations of the remaining processing spaces; and A substrate processing method, characterized by comprising a step of correcting the positions of variable capacitors each connected to the substrate support using the individual capacitor position deviation and the reference capacitor position.

13. In paragraph 12, The step of correcting the position of the above variable capacitor is: A substrate processing method characterized by correcting the capacitor position for a variable capacitor in the remaining processing spaces except for the processing space showing the highest VI output value among the plurality of processing spaces.

14. In paragraph 12, The step of correcting the position of the above variable capacitor is: A substrate processing method characterized in that the capacitor position for a variable capacitor in a processing space in which the individual capacitor position deviation among the remaining processing spaces exceeds a preset range is corrected.

15. In paragraph 12, The above reference capacitor position is, A substrate processing method characterized in that the substrate processing process to be performed in the above multiple processing spaces has different values ​​for each recipe.

16. In paragraph 10, The step of forming the above plasma is: A substrate processing method characterized in that, before performing the substrate processing process, the RF power is applied to each of the gas injection units formed in the plurality of processing spaces under the same conditions as the recipe of the substrate processing process.

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