Three-axis magnetic sensor

Abstract

A three-axis magnetic sensor, comprising a substrate, and magnetic induction modules Rx+, magnetic induction modules Ry+, magnetic induction modules Rz+, magnetic induction modules Rx-, magnetic induction modules Ry-, and magnetic induction modules Rz- that are arranged on the substrate. By configuring the arrangement and connection modes of the magnetic induction modules, every three adjacent magnetic induction modules can form an arm of a Wheatstone bridge, and by switching the states of terminals, different Wheatstone bridges are formed to achieve three-axis magnetic field detection.

Description

Three-axis magnetic sensor

[0001] This application claims priority to the Chinese patent application filed with the China Patent Office on April 1, 2024, with application number 202410388893.5 and invention name “Three-axis magnetic sensor”, the entire contents of which are incorporated herein by reference. Technical Field

[0002] The present invention relates to the technical field of magnetic field sensing devices, and in particular to a three-axis magnetic sensor. Background Art

[0003] Magnetic sensors based on magnetic tunnel junctions (MTJs) have the advantages of a large resistance change rate, high sensitivity, low power consumption, good temperature characteristics, and strong anti-interference capabilities. They mainly use the tunnel magnetoresistance (TMR) effect of multilayer magnetic film materials to achieve the effect that the film resistance changes with the magnitude and direction of the external magnetic field. Compared with current anisotropic magnetoresistance (AMR) sensors, tunnel magnetoresistance sensors have a larger resistance change rate and better temperature stability than Hall effect devices. However, the distribution of the external magnetic field is usually three-dimensional, and the TMR magnetoresistance unit can only sense the magnetic field in the plane, which makes it difficult to meet the requirements of measuring three-axis magnetic fields. Summary of the Invention

[0004] According to various embodiments of the present application, a three-axis magnetic sensor is provided.

[0005] A three-axis magnetic sensor includes a substrate and two magnetic induction strings arranged on the substrate, each of the magnetic induction strings includes one of the magnetic induction modules Rx+ and Rx-, one of the magnetic induction modules Ry+ and Ry-, one of the magnetic induction modules Rz+ and Rz-, the other of the magnetic induction modules Rx and Rx-, the other of the magnetic induction modules Ry+ and Ry-, and the other of the magnetic induction modules Rz+ and Rz-, wherein the first magnetic induction module and the last magnetic induction module of one magnetic induction string are respectively connected to the last magnetic induction module and the first magnetic induction module of the other magnetic induction string; the magnetic induction module Rx+ is sensitive to the magnetic field in the first axis direction, and its resistance increases as the magnetic field in the first axis direction increases; the magnetic induction module Rx- is sensitive to the magnetic field in the first axis direction The magnetic field of the first axis is sensitive, and the resistance value decreases as the magnetic field in the direction of the first axis increases; the magnetic induction module Ry+ is sensitive to the magnetic field in the direction of the second axis, and the resistance value increases as the magnetic field in the direction of the second axis increases; the magnetic induction module Ry- is sensitive to the magnetic field in the direction of the second axis, and the resistance value decreases as the magnetic field in the direction of the second axis increases; the magnetic induction module Rz+ is sensitive to the magnetic field in the direction of the third axis, and the resistance value increases as the magnetic field in the direction of the third axis increases; the magnetic induction module Rz- is sensitive to the magnetic field in the direction of the third axis, and the resistance value decreases as the magnetic field in the direction of the third axis increases; terminals are provided between any two adjacent magnetic induction modules, and by switching the states of the terminals, every three adjacent magnetic induction modules form a bridge arm of a Wheatstone bridge to realize the detection of a three-axis magnetic field; the first axis, the second axis and the third axis are perpendicular to each other, and the third axis is also perpendicular to the plane of the substrate.

[0006] The details of one or more embodiments of the present application are set forth in the accompanying drawings and the description below. Other features, objects, and advantages of the invention will become apparent from the description, drawings, and claims. BRIEF DESCRIPTION OF THE DRAWINGS

[0007] In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the following briefly introduces the drawings required for use in the embodiments or the description of the prior art. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative work.

[0008] FIG1 is a schematic diagram of a bridge of a three-axis magnetic sensor according to an embodiment;

[0009] FIG2 is a schematic structural diagram of a three-axis magnetic sensor according to an embodiment;

[0010] FIG3 is a schematic diagram of annealing directions of different regions in one embodiment;

[0011] FIG4 is a schematic cross-sectional view of the slope structure along lines A1-A1', A2-A2', B1-B1', and B2-B2' in FIG3 ;

[0012] FIG5 is a schematic diagram showing the structure of a magnetic induction module composed of a magnetoresistive unit in one embodiment;

[0013] FIG6 is a schematic structural diagram of a three-axis magnetic sensor in another embodiment;

[0014] FIG7 is a top view of the three-axis magnetic sensor in FIG6 ;

[0015] FIG8 is a schematic cross-sectional view of the slope structure along lines AA' and BB' in FIG7 ;

[0016] FIG9 is a schematic structural diagram of a magnetic induction module composed of a magnetoresistive unit in another embodiment;

[0017] FIG10 is a schematic diagram of annealing directions of different regions in yet another embodiment;

[0018] FIG11 is a schematic cross-sectional view of the slope structure in FIG10 along lines A1-A1', A2-A2', B1-B1', and B2-B2';

[0019] FIG12 is a schematic structural diagram of a magnetic induction module composed of a magnetoresistive unit in another embodiment;

[0020] FIG13 is a schematic structural diagram of a three-axis magnetic sensor in another embodiment;

[0021] FIG14 is a schematic diagram of annealing directions of different regions in yet another embodiment;

[0022] FIG15 is a schematic cross-sectional view of the slope structure along lines AA' and BB' in FIG14 ;

[0023] FIG16 is a schematic structural diagram of a magnetic induction module composed of a magnetoresistive unit in another embodiment;

[0024] FIG17 is a schematic structural diagram of a three-axis magnetic sensor in another embodiment;

[0025] FIG18 is a schematic structural diagram of a magnetic induction module composed of a magnetoresistive unit in another embodiment;

[0026] FIG19 is a schematic structural diagram of a three-axis magnetic sensor in another embodiment;

[0027] FIG20 is a structural schematic diagram of a magnetic induction module composed of a magnetoresistive unit in another embodiment. DETAILED DESCRIPTION

[0028] In order to make the purpose, technical solutions and advantages of the present invention more clearly understood, the present invention will be further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain the present invention and are not intended to limit the present invention.

[0029] In one embodiment, as shown in FIG1 , a three-axis magnetic sensor is provided, including a substrate and two magnetic induction strings arranged on the substrate, each magnetic induction string including one of the magnetic induction modules Rx+ and the magnetic induction module Rx-, one of the magnetic induction modules Ry+ and the magnetic induction module Ry-, one of the magnetic induction modules Rz+ and the magnetic induction module Rz-, the other of the magnetic induction modules Rx+ and the magnetic induction module Rx-, the other of the magnetic induction modules Ry+ and the magnetic induction module Ry-, and the other of the magnetic induction modules Rz+ and the magnetic induction module Rz-, which are connected in sequence. In addition, the first magnetic induction module and the last magnetic induction module of one magnetic induction string are respectively connected to the last magnetic induction module and the first magnetic induction module of the other magnetic induction string. The magnetic induction module Rx+ is sensitive to magnetic fields along the first axis, and its resistance increases as the magnetic field along the first axis increases. The magnetic induction module Rx- is sensitive to magnetic fields along the first axis, and its resistance decreases as the magnetic field along the first axis increases. The magnetic induction module Ry+ is sensitive to magnetic fields along the second axis, and its resistance increases as the magnetic field along the second axis increases. The magnetic induction module Ry- is sensitive to magnetic fields along the second axis, and its resistance decreases as the magnetic field along the second axis increases. The magnetic induction module Rz+ is sensitive to magnetic fields along the third axis, and its resistance increases as the magnetic field along the third axis increases. The magnetic induction module Rz- is sensitive to magnetic fields along the third axis, and its resistance decreases as the magnetic field along the third axis increases. Terminals are provided between any two adjacent magnetic induction modules. By switching the states of the terminals, every three adjacent magnetic induction modules form a leg of a Wheatstone bridge, thereby enabling three-axis magnetic field detection. The first, second, and third axes are perpendicular to each other, and the third axis is also perpendicular to the plane of the substrate.

[0030] The magnetic induction module Rx+ is sensitive to the magnetic field in the direction of the first axis, and its resistance increases as the magnetic field in the direction of the first axis increases, and the magnetic induction module Rx- is sensitive to the magnetic field in the direction of the first axis, and its resistance decreases as the magnetic field in the direction of the first axis increases. This means that both the magnetic induction module Rx+ and the magnetic induction module Rx- are sensitive to the magnetic field in the direction of the first axis, and when a magnetic field in the positive direction of the first axis is applied, the resistance of the magnetic induction module Rx+ increases as the magnetic field increases, and the resistance of the magnetic induction module Rx- decreases as the magnetic field increases; or when a magnetic field in the negative direction of the first axis is applied, the resistance of the magnetic induction module Rx+ increases as the magnetic field increases, and the resistance of the magnetic induction module Rx- decreases as the magnetic field increases.

[0031] The magnetic induction module Ry+ is sensitive to the magnetic field in the direction of the second axis, and its resistance increases as the magnetic field in the direction of the second axis increases; the magnetic induction module Ry- is sensitive to the magnetic field in the direction of the second axis, and its resistance decreases as the magnetic field in the direction of the second axis increases. This means that both the magnetic induction module Ry+ and the magnetic induction module Ry- are sensitive to the magnetic field in the direction of the second axis, and when a magnetic field in the positive direction of the second axis is applied, the resistance of the magnetic induction module Ry+ increases as the magnetic field increases, and the resistance of the magnetic induction module Ry- decreases as the magnetic field increases; or when a magnetic field in the negative direction of the second axis is applied, the resistance of the magnetic induction module Ry+ increases as the magnetic field increases, and the resistance of the magnetic induction module Ry- decreases as the magnetic field increases.

[0032] The magnetic induction module Rz+ is sensitive to the magnetic field in the direction of the third axis, and its resistance increases as the magnetic field in the direction of the third axis increases, and the magnetic induction module Rz- is sensitive to the magnetic field in the direction of the third axis, and its resistance decreases as the magnetic field in the direction of the third axis increases. This means that both the magnetic induction module Rz+ and the magnetic induction module Rz- are sensitive to the magnetic field in the direction of the third axis, and when a magnetic field in the positive direction of the third axis is applied, the resistance of the magnetic induction module Rz+ increases as the magnetic field increases, and the resistance of the magnetic induction module Rz- decreases as the magnetic field increases; or when a magnetic field in the negative direction of the third axis is applied, the resistance of the magnetic induction module Rz+ increases as the magnetic field increases, and the resistance of the magnetic induction module Rz- decreases as the magnetic field increases.

[0033] The first, second, and third axes are not uniquely configured and can be the X-axis, Y-axis, and Z-axis, respectively, with the substrate plane being the XY plane. The following example illustrates a case where the first, second, and third axes are the X-axis, Y-axis, and Z-axis, respectively, the substrate plane is the XY plane, and the resistance of the magnetic induction module Rx+ increases with an increase in the negative magnetic field in the X-axis direction, the resistance of the magnetic induction module Rx- decreases with an increase in the negative magnetic field in the X-axis direction, the resistance of the magnetic induction module Ry+ increases with an increase in the negative magnetic field in the Y-axis direction, the resistance of the magnetic induction module Ry- decreases with an increase in the negative magnetic field in the Y-axis direction, the resistance of the magnetic induction module Rz+ increases with an increase in the negative magnetic field in the Z-axis direction, and the resistance of the magnetic induction module Rz- decreases with an increase in the negative magnetic field in the Z-axis direction.

[0034] The magnetic induction module Rx+ is formed by combining one or more magnetoresistive units, which can be X-axis sensitive magnetoresistive units or a combination of magnetoresistive units with specific sensitivity directions. It is sufficient to ensure that the combined magnetic induction angle of the multiple magnetoresistive units is in the positive direction of the X axis. The magnetic induction module Rx- is formed by combining one or more magnetoresistive units, which can be X-axis sensitive magnetoresistive units or a combination of magnetoresistive units with specific sensitivity directions. It is sufficient to ensure that the combined magnetic induction angle of the multiple magnetoresistive units is in the negative direction of the X axis. The magnetic induction module Ry+ is formed by combining one or more magnetoresistive units, which can be Y-axis sensitive magnetoresistive units or a combination of magnetoresistive units with specific sensitivity directions. It is sufficient to ensure that the combined magnetic induction angle of the multiple magnetoresistive units is in the positive direction of the Y axis. The magnetic induction module Ry- is formed by combining one or more magnetoresistive units, which can be Y-axis sensitive magnetoresistive units or a combination of magnetoresistive units with specific sensitivity directions. It is sufficient to ensure that the combined magnetic induction angle of the multiple magnetoresistive units is in the negative direction of the Y axis. The magnetic induction module Rz+ is formed by combining multiple magnetoresistive units with specific sensitivity directions. The combined magnetic induction angle of the multiple magnetoresistive units is in the positive direction of the Z axis. The magnetic induction module Rz- is formed by combining multiple magnetoresistive units with specific sensitive directions, and the magnetic induction synthesis angle of the multiple magnetoresistive units is the negative direction of the Z axis.

[0035] The magnetoresistance units of the magnetic induction module Rx+ and the magnetic induction module Rx- are manufactured by a planar process or a slope process; the magnetoresistance units of the magnetic induction module Ry+ and the magnetic induction module Ry- are manufactured by a planar process or a slope process; the magnetoresistance units of the magnetic induction module Rz+ and the magnetic induction module Rz- are manufactured by a slope process.

[0036] Each magnetic induction string includes one of the magnetic induction modules Rx+ and Rx-, one of the magnetic induction modules Ry+ and Ry-, one of the magnetic induction modules Rz+ and Rz-, the other of the magnetic induction modules Rx+ and Rx-, the other of the magnetic induction modules Ry+ and Ry-, and the other of the magnetic induction modules Rz+ and Rz-, which are connected in sequence. Furthermore, the first and last magnetic induction modules of one magnetic induction string are respectively connected to the last and first magnetic induction modules of another magnetic induction string. This arrangement and connection method ensures that every three consecutive magnetic induction modules are sensitive to magnetic fields in the X-axis, Y-axis, and Z-axis directions, respectively. Furthermore, the resistance of the three consecutive magnetic induction modules changes with the magnetic field in the opposite direction to that of the next three consecutive magnetic induction modules, and the same as that of the next three consecutive magnetic induction modules, thereby ensuring that every three consecutive magnetic induction modules can form one arm of a Wheatstone bridge. By switching the states of the terminals, different Wheatstone bridges can be formed, and the output signals of the Wheatstone bridges can be added and / or subtracted to achieve the detection of a three-axis magnetic field.

[0037] The above-mentioned three-axis magnetic sensor is configured by arranging a magnetic induction module Rx+, a magnetic induction module Ry+, a magnetic induction module Rz+, a magnetic induction module Rx-, a magnetic induction module Ry- and a magnetic induction module Rz- on a substrate, and by setting the layout and connection method of each magnetic induction module so that every three adjacent magnetic induction modules can form an arm of a Wheatstone bridge. By switching the state of the terminals, different Wheatstone bridges can be formed, and the output signals of the Wheatstone bridges are added and / or subtracted, thereby realizing three-axis magnetic field detection. In addition, the three-axis magnetic sensor that realizes three-axis magnetic field detection in this way has low power consumption.

[0038] In one embodiment, as shown in Figure 1, the magnetic induction string includes a magnetic induction module Rx+, a magnetic induction module Ry+, a magnetic induction module Rz+, a magnetic induction module Rx-, a magnetic induction module Ry-, and a magnetic induction module Rz-, which are connected in sequence; the first magnetic induction module Rx+ and the last magnetic induction module Rz- of one magnetic induction string are respectively connected to the last magnetic induction module Rz- and the first magnetic induction module Rx+ of another magnetic induction string.

[0039] Terminals are provided between any two adjacent magnetic induction modules. Specifically, one magnetic induction module Rx+ connects terminal A and terminal B, one magnetic induction module Ry+ connects terminal B and terminal C, one magnetic induction module Rz+ connects terminal C and terminal D, one magnetic induction module Rx- connects terminal D and terminal E, one magnetic induction module Ry- connects terminal E and terminal F, and one magnetic induction module Rz- connects terminal F and terminal G. Another magnetic induction module Rx+ connects terminal G and terminal H, another magnetic induction module Ry+ connects terminal H and terminal I, another magnetic induction module Rz+ connects terminal I and terminal J, another magnetic induction module Rx- connects terminal J and terminal K, another magnetic induction module Ry- connects terminal K and terminal L, and another magnetic induction module Rz- connects terminal L and terminal A.

[0040] By switching the states of the terminals, every three adjacent magnetic induction modules form a bridge arm of the Wheatstone bridge. Specifically, when terminal A is connected to voltage VCC, terminal G is grounded, and terminals D and J output signals, the magnetic induction modules Rx+, Ry+, and Rz+, which are adjacent to each other between terminals A and D, form the first bridge arm. The magnetic induction modules Rx-, Ry-, and Rz-, which are adjacent to each other between terminals D and G, form the second bridge arm. The magnetic induction modules Rx+, Ry+, and Rz+, which are adjacent to each other between terminals G and J, form the third bridge arm. Furthermore, the magnetic induction modules Rx-, Ry-, and Rz-, which are adjacent to each other between terminals J and A, form the fourth bridge arm. In this way, the signal DJ output by terminals D and J corresponds to the X-axis magnetic field, the Y-axis magnetic field, and the Z-axis magnetic field.

[0041] When terminal B is connected to voltage VCC, terminal H is grounded, and terminals E and K output signals, the magnetic induction modules Ry+, Rz+, and Rx-, which are adjacent to each other between terminals B and E, form a first bridge arm. The magnetic induction modules Ry-, Rz-, and Rx+, which are adjacent to each other between terminals E and H, form a second bridge arm. The magnetic induction modules Ry+, Rz+, and Rx-, which are adjacent to each other between terminals H and K, form a third bridge arm. The magnetic induction modules Ry-, Rz-, and Rx+, which are adjacent to each other between terminals K and B, form a fourth bridge arm. In this way, the signals EK output by terminals E and K correspond to the -X-axis magnetic field, the Y-axis magnetic field, and the Z-axis magnetic field.

[0042] When terminal C is connected to voltage VCC, terminal I is grounded, and terminals F and L output signals, the magnetic induction modules Rz+, Rx-, and Ry-, which are adjacent to each other between terminals C and F, form a first bridge arm; the magnetic induction modules Rz-, Rx+, and Ry+, which are adjacent to each other between terminals F and I, form a second bridge arm; the magnetic induction modules Rz+, Rx-, and Ry-, which are adjacent to each other between terminals I and L, form a third bridge arm; and the magnetic induction modules Rz-, Rx+, and Ry+, which are adjacent to each other between terminals L and C, form a fourth bridge arm. In this way, the signal FL output by terminals F and L corresponds to the -X-axis magnetic field, the -Y-axis magnetic field, and the Z-axis magnetic field.

[0043] Subsequent circuitry performs addition and subtraction processing on the resulting signals DJ, EK, and FL to generate separate X-axis, Y-axis, and Z-axis magnetic field sensing outputs, enabling detection of the X-axis, Y-axis, and Z-axis magnetic fields. For example, the signal obtained by subtracting signals DJ from EK corresponds to the X-axis magnetic field; the signal obtained by subtracting signals EK from FL corresponds to the Y-axis magnetic field; and the signal obtained by adding signals DJ and FL corresponds to the Z-axis magnetic field.

[0044] In one embodiment, as shown in FIG2 , the three-axis magnetic sensor further includes a first slope array 110 and a second slope array 120 disposed on a substrate (not shown), the first slope array 110 and the second slope array 120 both including a plurality of slope structures 130, each slope structure 130 including a first inclined surface and a second inclined surface symmetrically disposed about the axis; the angle between the orthographic projection of each slope structure 130 of the first slope array 110 in the plane of the substrate and the negative direction of the first axis is equal to the angle between the orthographic projection of each slope structure 130 of the second slope array 120 in the plane of the substrate and the positive direction of the first axis, and the angle between the orthographic projection of each slope structure 130 of the second slope array 120 in the plane of the substrate and the positive ... first slope array 110 and the positive direction of the first axis is equal to the angle between the orthographic projection of each slope structure 130 of the second slope array 120 and the positive direction of the first axis. The angle is greater than 0° and less than 90°; a plurality of magnetic tunnel junctions 140 are arranged on each slope structure 130 of the first slope array 110 and the second slope array 120, and the pinning direction of the magnetic tunnel junctions 140 located on the first slope is along the first slope direction, and the pinning direction of the magnetic tunnel junctions 140 located on the second slope is along the second slope direction; the magnetic tunnel junctions 140 with the same pinning direction are connected in series to form a magnetoresistive unit, and each magnetoresistive unit includes the same number of magnetic tunnel junctions 140, so that the magnetic tunnel junctions located in the first slope array 110 and the second slope array 120 are connected in series to form a plurality of magnetoresistive units.

[0045] Specifically, a magnetic tunnel junction includes at least a free layer, a barrier layer, and a pinned layer. Changes in the magnetic field in the environment can cause the magnetization direction of the free layer to change. When the magnetization direction of the free layer is positively parallel to the pinning direction of the pinned layer, the magnetic tunnel junction is in a low-resistance state. When the magnetization direction of the free layer is antiparallel to the pinning direction of the pinned layer, the magnetic tunnel junction is in a high-resistance state. It can be seen that the magnetic field component of the external magnetic field that is parallel to the pinning direction can cause the magnetization direction of the free layer to change, and based on the parallel state with the pinning direction of the pinned layer, the resistance value of the magnetic tunnel junction can change. By connecting magnetic tunnel junctions in series to form a magnetoresistive unit, one or multiple magnetoresistive units to form a magnetic induction module, and finally multiple magnetic induction modules to form a Wheatstone bridge, magnetic field detection in the corresponding direction can be achieved.

[0046] The slope structure 130 can be a boss or groove structure. Each slope structure 130 includes a first slope and a second slope arranged axially symmetrically, which means that the slope gradient of the slope structure 130 (the angle between the slope on which the magnetic tunnel junction 140 is placed and the plane where the first axis and the second axis are located) is α degrees, and the value of α can be set according to actual needs. The orthographic projection of each slope structure 130 of the first slope array 110 in the plane of the substrate forms an angle of β degrees with the negative direction of the first axis, and the orthographic projection of each slope structure 130 of the second slope array 120 in the plane of the substrate also forms an angle of β degrees with the positive direction of the first axis, 0°<β<90°.

[0047] By setting the pinning directions of the multiple magnetic tunnel junctions 140 along the slope direction of the slope structure 130, the pinning directions of the multiple magnetic tunnel junctions 140 have a component along the Z-axis direction, and thus can sense a magnetic field in the Z-axis direction. Because the slope structures 130 with the same slope gradient are used, the components of the pinning directions of the multiple magnetic tunnel junctions 140 in the Z-axis direction are equal and in the same or opposite directions. Furthermore, the multiple slope structures 130 are set so that their orthographic projections in the plane of the substrate have an angle with the positive direction of the X-axis (or with the negative direction of the X-axis), and the angle is greater than 0° and less than 90°, so that the orthographic projections of the pinning directions of the multiple magnetic tunnel junctions 140 in the plane of the substrate (i.e., the orthographic projections in the XY plane) have a component along the X-axis direction and a component along the Y-axis direction. As a result, the multiple magnetic tunnel junctions 140 can sense a magnetic field in the X-axis direction and a magnetic field in the Y-axis direction. By setting the angle between the orthogonal projections of the multiple slope structures 130 of the first slope array 110 within the plane of the substrate and the negative X-axis direction and the angle between the orthogonal projections of the multiple slope structures 130 of the second slope array 120 within the plane of the substrate and the positive X-axis direction to be equal, and by setting the first slope and the second slope to be axially symmetrical, the pinning directions of the multiple magnetic tunnel junctions 140 in the X-axis, Y-axis, and Z-axis directions are equal and in the same or opposite directions. In this way, the magnetic tunnel junctions 140 with the same pinning direction are connected in series to form a magnetoresistive unit, and each magnetoresistive unit includes the same number of magnetic tunnel junctions 140. The magnetic tunnel junctions 140 in the first slope array 110 and the second slope array 120 are connected in series to form multiple magnetoresistive units. Each magnetoresistive unit will change its resistance based on changes in the external magnetic field, and the components of the resistance change in the X-axis, Y-axis, and Z-axis directions are equal and in the same or opposite directions. Based on this, corresponding magnetoresistive units can be used to form a magnetic induction module according to actual needs to achieve magnetic field sensing in a specific direction.

[0048] In one embodiment, as shown in FIG3 , both the first and second inclined surfaces extend along the central axis H of the slope structure 130, allowing for the arrangement of as many magnetic tunnel junctions 140 as possible. The slope structures 130 in the first and second slope arrays 110 and 120 are arranged in a direction perpendicular to the central axis H of the slope structures 130 within the plane of the substrate. It should be understood that the angle between the orthographic projection of the multiple slope structures 130 of the first slope array 110 within the plane of the substrate and the negative direction of the X-axis refers to the angle between the orthographic projection of the central axis H of the multiple slope structures 130 of the first slope array 110 within the plane of the substrate and the negative direction of the X-axis. Similarly, the angle between the orthographic projection of the multiple slope structures 130 of the second slope array 120 within the plane of the substrate and the positive direction of the X-axis refers to the angle between the orthographic projection of the central axis H of the multiple slope structures 130 of the second slope array 120 within the plane of the substrate and the positive direction of the X-axis.

[0049] The number of slope structures 130, the geometric dimensions of the slope structures 130, the number of magnetic tunnel junctions 140, and the geometric dimensions of the magnetic tunnel junctions 140 in the first slope array 110 and the second slope array 120 are all identical. Setting the geometric dimensions of the slope structures 130 / magnetic tunnel junctions 140 in the first slope array 110 and the second slope array 120 to be identical can mean that the geometric dimensions are exactly the same, or that the error in the geometric dimensions is within an allowable range. By designing the number and geometric dimensions of the slope structures 130 and the magnetic tunnel junctions 140 in the first slope array 110 and the second slope array 120 to be identical, the fabrication of the slope structures 130 and the magnetic tunnel junctions 140 and the connection between the magnetic tunnel junctions 140 can be facilitated, and magnetic field detection can be more accurately performed.

[0050] In one embodiment, the pinning direction of the magnetic tunnel junction 140 located on the first slope of the slope structure 130 is upward along the first slope, and the pinning direction of the magnetic tunnel junction 140 located on the second slope of the slope structure 130 is downward along the second slope; alternatively, the pinning direction of the magnetic tunnel junction 140 located on the first slope of the slope structure 130 is downward along the first slope, and the pinning direction of the magnetic tunnel junction 140 located on the second slope of the slope structure 130 is upward along the second slope.

[0051] The pinning direction of the magnetic tunnel junction 140 can be determined by the annealing magnetic field. As shown in FIG3 , the black arrow indicates the in-plane annealing direction. For the magnetic tunnel junctions 140 of the same slope structure 130 , annealing can be performed in the plane of the substrate in a direction perpendicular to the central axis H of the slope structure 130, so that the pinning direction of the magnetic tunnel junction 140 on the first slope is upward along the first slope, and the pinning direction of the magnetic tunnel junction 140 on the second slope is downward along the second slope; or, alternatively, the pinning direction of the magnetic tunnel junction 140 on the first slope is downward along the first slope, and the pinning direction of the magnetic tunnel junction 140 on the second slope is upward along the second slope.

[0052] Specifically, the first slope array 110 is divided into a first region 11 and a second region 12, and the second slope array 120 is divided into a third region 13 and a fourth region 14. The pinning direction of the magnetic tunnel junctions 140 on the slope structures 130 in the first and third regions 11 and 13 is such that the magnetic tunnel junctions 140 on the first slope face are pinned upward along the first slope face, while the magnetic tunnel junctions 140 on the second slope face are pinned downward along the second slope face. The pinning direction of the magnetic tunnel junctions 140 on the slope structures 130 in the second and fourth regions 12 and 14 is such that the magnetic tunnel junctions 140 on the first slope face are pinned downward along the first slope face, while the magnetic tunnel junctions 140 on the second slope face are pinned upward along the second slope face.

[0053] As shown in Figures 3 and 4 , taking the ramp structure 130 as a boss as an example, the first and third regions 11 and 13 are annealed perpendicular to the central axis H of the ramp structure 130, and in a direction from the first inclined surface W1 to the second inclined surface W2 of the ramp structure 130. The second and fourth regions 12 and 14 are annealed perpendicular to the central axis H of the ramp structure 130, and in a direction from the second inclined surface W2 to the first inclined surface W1 of the ramp structure 130. It will be appreciated that if the ramp structure 130 is designed as a groove, the annealing process is also perpendicular to the central axis H of the ramp structure 130, but in the opposite direction along the inclined surface of the ramp structure 130. For example, with respect to the first region 11, when the slope structure 130 is designed as a groove, annealing is required in a direction perpendicular to the central axis H of the slope structure 130 and from the second slope surface toward the first slope surface of the slope structure 130, so that the pinning directions of the magnetic tunnel junctions 140 on the slope structure 130 are such that the magnetic tunnel junctions 140 located on the first slope surface are pinned upward along the first slope surface, and the magnetic tunnel junctions 140 located on the second slope surface are pinned downward along the second slope surface.

[0054] 3 and 4 , also taking the slope structure 130 designed as a boss as an example, the pinning directions of the magnetic tunnel junctions 140 on the slope structures 130 in the first region 11 and the third region 13 are that the magnetic tunnel junctions 140 located on the first slope W1 are upward along the first slope W1, and the magnetic tunnel junctions 140 located on the second slope W2 are downward along the second slope W2; the pinning directions of the magnetic tunnel junctions 140 on the slope structures 130 in the second region 12 and the fourth region 14 are that the magnetic tunnel junctions 140 located on the first slope W1 are downward along the first slope W1, and the magnetic tunnel junctions 140 located on the second slope W2 are upward along the second slope W2. Thus, the pinning directions of the magnetic tunnel junctions 140 on the first inclined surface W1 and the second inclined surface W2 of the slope structure 130 in the first region 11 and the fourth region 14 all have a component along the positive direction of the X-axis, while the pinning directions of the magnetic tunnel junctions 140 on the first inclined surface W1 and the second inclined surface W2 of the slope structure 130 in the second region 12 and the third region 13 all have a component along the negative direction of the X-axis. The pinning directions of the magnetic tunnel junctions 140 on the first inclined surface W1 and the second inclined surface W2 of the slope structure 130 in the first region 11 and the third region 13 all have a component along the positive direction of the Y-axis, while the pinning directions of the magnetic tunnel junctions 140 on the first inclined surface W1 and the second inclined surface W2 of the slope structure 130 in the second region 12 and the fourth region 14 all have a component along the negative direction of the Y-axis. The pinning directions of the magnetic tunnel junctions 140 located on the first slope W1 of the slope structure 130 in the first region 11 and the third region 13 and the magnetic tunnel junctions 140 located on the second slope W2 of the slope structure 130 in the second region 12 and the fourth region 14 both have components along the positive direction of the Z axis. The pinning directions of the magnetic tunnel junctions 140 located on the second slope W2 of the slope structure 130 in the first region 11 and the third region 13 and the magnetic tunnel junctions 140 located on the first slope W1 of the slope structure 130 in the second region 12 and the fourth region 14 both have components along the negative direction of the Z axis.

[0055] Furthermore, the magnetic tunnel junctions 140 on the first slope of the slope structure 130 in the first region 11 are connected in series to form a magnetoresistance unit R11; the magnetic tunnel junctions 140 on the second slope of the slope structure 130 in the first region 11 are connected in series to form a magnetoresistance unit R12; the magnetic tunnel junctions 140 on the first slope of the slope structure 130 in the second region 12 are connected in series to form a magnetoresistance unit R14; the magnetic tunnel junctions 140 on the second slope of the slope structure 130 in the second region 12 are connected in series to form a magnetoresistance unit R13; the magnetic tunnel junctions 140 on the first slope of the slope structure 130 in the third region 13 are connected in series to form a magnetoresistance unit R21; the magnetic tunnel junctions 140 on the second slope of the slope structure 130 in the third region 13 are connected in series to form a magnetoresistance unit R22; the magnetic tunnel junctions 140 on the first slope of the slope structure 130 in the fourth region 14 are connected in series to form a magnetoresistance unit R24; and the magnetic tunnel junctions 140 on the second slope of the slope structure 130 in the fourth region 14 are connected in series to form a magnetoresistance unit R23.

[0056] Taking the ramp structure 130 as an example, the components of the pinning direction of the magnetic tunnel junction 140 in the magnetoresistive unit R11 on the three axes are +X, +Y, and +Z, respectively. The components of the pinning direction of the magnetic tunnel junction 140 in the magnetoresistive unit R12 on the three axes are +X, +Y, and -Z, respectively. The components of the pinning direction of the magnetic tunnel junction 140 in the magnetoresistive unit R13 on the three axes are -X, -Y, and +Z, respectively. The components of the pinning direction of the magnetic tunnel junction 140 in the magnetoresistive unit R14 on the three axes are -X, -Y, and -Z, respectively. The components of the pinning direction of the magnetic tunnel junction 140 in the magnetoresistive unit R21 on the three axes are -X, +Y, and +Z, respectively. The components of the pinning direction of the magnetic tunnel junction 140 in the magnetoresistive unit R22 on the three axes are -X, +Y, and -Z, respectively. The pinning direction components of the magnetic tunnel junction 140 in the magnetoresistive unit R23 on three axes are +X, -Y, and +Z. The pinning direction components of the magnetic tunnel junction 140 in the magnetoresistive unit R24 on three axes are +X, -Y, and -Z.

[0057] As shown in Figure 5, the magnetic induction module Rx+ is formed by connecting the magnetoresistance unit R11 and the magnetoresistance unit R24; the magnetic induction module Ry+ is formed by connecting the magnetoresistance unit R12 and the magnetoresistance unit R21; the magnetic induction module Rz+ is formed by connecting the magnetoresistance unit R21 and the magnetoresistance unit R23, or by connecting the magnetoresistance unit R11 and the magnetoresistance unit R13; the magnetic induction module Rx- is formed by connecting the magnetoresistance unit R13 and the magnetoresistance unit R22; the magnetic induction module Ry- is formed by connecting the magnetoresistance unit R14 and the magnetoresistance unit R23; the magnetic induction module Rz- is formed by connecting the magnetoresistance unit R22 and the magnetoresistance unit R24, or by connecting the magnetoresistance unit R12 and the magnetoresistance unit R14. Taking magnetic induction modules Rx+ and Rx- as examples, the pinning components of the magnetic tunnel junctions in magnetoresistive units R11 and R24 in the Y and Z axes cancel each other out, leaving only the component in the positive X axis. This makes magnetic induction module Rx+ sensitive to magnetic fields in the X axis, and its resistance increases with increasing magnetic fields in the negative X axis. The pinning components of the magnetic tunnel junctions in magnetoresistive units R13 and R22 in the Y and Z axes cancel each other out, leaving only the component in the negative X axis. This makes magnetic induction module Rx- sensitive to magnetic fields in the X axis, and its resistance decreases with increasing magnetic fields in the negative X axis.

[0058] In one embodiment, the pinning directions of the magnetic tunnel junctions 140 located on the first and second sloped surfaces of the slope structure 130 are both upward along the sloped surfaces, or the pinning directions of the magnetic tunnel junctions 140 located on the first and second sloped surfaces of the slope structure 130 are both downward along the sloped surfaces. The pinning directions of the magnetic tunnel junctions 140 can be determined by the annealing magnetic field. As shown in FIG6 , the black arrow indicates the out-of-plane annealing direction. For the same slope structure 130, annealing is performed in a direction perpendicular to the substrate plane (i.e., along the Z-axis direction) so that the pinning directions of the magnetic tunnel junctions 140 located on the first and second sloped surfaces are both upward along the sloped surfaces, or both downward along the sloped surfaces.

[0059] Specifically, the first slope array 110 is divided into a first region 11 and a second region 12, and the second slope array 120 is divided into a third region 13 and a fourth region 14. The pinning direction of the magnetic tunnel junctions 140 on the slope structures 130 in the first and third regions 11 and 13 is upward along the slope surface; the pinning direction of the magnetic tunnel junctions 140 on the slope structures 130 in the second and fourth regions 12 and 14 is downward along the slope surface. For example, using the example of a slope structure 130 designed as a platform, the magnetic tunnel junctions 140 on the slope structures 130 in the first and third regions 11 and 13 are annealed in an upward direction perpendicular to the substrate plane; the magnetic tunnel junctions 140 on the slope structures 130 in the second and fourth regions 12 and 14 are annealed in a downward direction perpendicular to the substrate plane. It can be understood that if the slope structure 130 is designed as a groove, the magnetic tunnel junction 140 on the slope structure 130 in the first region 11 and the third region 13 is still annealed in a direction perpendicular to the substrate plane and upward; the magnetic tunnel junction 140 on the slope structure 130 in the second region 12 and the fourth region 14 is still annealed in a direction perpendicular to the substrate plane and downward.

[0060] Referring to Figures 7 and 8 , also taking the example of the slope structure 130 being designed as a boss, the pinning directions of the magnetic tunnel junctions 140 on the slope structure 130 in the first region 11 and the third region 13 are both upward along the slope, while the pinning directions of the magnetic tunnel junctions 140 on the slope structure 130 in the second region 12 and the fourth region 14 are both downward along the slope. Thus, in the first region 11, the pinning direction of the magnetic tunnel junctions 140 on the first slope of the slope structure 130 has a component along the positive X-axis, a component along the positive Y-axis, and a component along the positive Z-axis, while the pinning direction of the magnetic tunnel junctions 140 on the second slope of the slope structure 130 has a component along the negative X-axis, a component along the negative Y-axis, and a component along the positive Z-axis. In the second region 12, the pinning direction of the magnetic tunnel junction 140 on the first slope surface of the slope structure 130 has a component along the negative X-axis, a component along the negative Y-axis, and a component along the negative Z-axis. The pinning direction of the magnetic tunnel junction 140 on the second slope surface of the slope structure 130 has a component along the positive X-axis, a component along the positive Y-axis, and a component along the negative Z-axis. In the third region 13, the pinning direction of the magnetic tunnel junction 140 on the first slope surface of the slope structure 130 has a component along the positive X-axis, a component along the negative Y-axis, and a component along the positive Z-axis. The pinning direction of the magnetic tunnel junction 140 on the second slope surface of the slope structure 130 has a component along the negative X-axis, a component along the positive Y-axis, and a component along the positive Z-axis. In the fourth region 14, the pinning direction of the magnetic tunnel junction 140 on the first slope of the slope structure 130 has a component along the negative direction of the X axis, a component along the positive direction of the Y axis, and a component along the negative direction of the Z axis. The pinning direction of the magnetic tunnel junction 140 on the second slope of the slope structure 130 has a component along the positive direction of the X axis, a component along the negative direction of the Y axis, and a component along the negative direction of the Z axis.

[0061] As shown in Figures 7 and 8, the magnetic tunnel junctions 140 on the first slope W1 of the slope structure 130 of the first region 11 are connected in series to form a magnetoresistive unit R15; the magnetic tunnel junctions 140 on the second slope W2 of the slope structure 130 of the first region 11 are connected in series to form a magnetoresistive unit R16; the magnetic tunnel junctions 140 on the first slope W1 of the slope structure 130 of the second region 12 are connected in series to form a magnetoresistive unit R18; and the magnetic tunnel junctions 140 on the second slope W2 of the slope structure 130 of the second region 12 are connected in series to form a magnetoresistive unit R17. The magnetic tunnel junctions 140 on the first slope W1 of the slope structure 130 of the third region 13 are connected in series to form a magnetoresistive unit R25; the magnetic tunnel junctions 140 on the second slope W2 of the slope structure 130 of the third region 13 are connected in series to form a magnetoresistive unit R26; the magnetic tunnel junctions 140 on the first slope W1 of the slope structure 130 of the fourth region 14 are connected in series to form a magnetoresistive unit R28; the magnetic tunnel junctions 140 on the second slope W2 of the slope structure 130 of the fourth region 14 are connected in series to form a magnetoresistive unit R27.

[0062] Taking the ramp structure 130 as an example, the components of the pinning direction of the magnetic tunnel junction 140 in the magnetoresistive unit R15 on the three axes are +X, +Y, and +Z, respectively. The components of the pinning direction of the magnetic tunnel junction 140 in the magnetoresistive unit R16 on the three axes are -X, -Y, and +Z, respectively. The components of the pinning direction of the magnetic tunnel junction 140 in the magnetoresistive unit R17 on the three axes are +X, +Y, and -Z, respectively. The components of the pinning direction of the magnetic tunnel junction 140 in the magnetoresistive unit R18 on the three axes are -X, -Y, and -Z, respectively. The components of the pinning direction of the magnetic tunnel junction 140 in the magnetoresistive unit R25 on the three axes are +X, -Y, and +Z, respectively. The components of the pinning direction of the magnetic tunnel junction 140 in the magnetoresistive unit R26 on the three axes are -X, +Y, and +Z, respectively. The pinning direction components of the magnetic tunnel junction 140 in the magnetoresistive unit R27 on three axes are +X, -Y, and -Z. The pinning direction components of the magnetic tunnel junction 140 in the magnetoresistive unit R28 on three axes are -X, +Y, and -Z.

[0063] As shown in Figure 9, the magnetic induction module Rx+ is formed by connecting the magnetoresistance unit R15 and the magnetoresistance unit R27; the magnetic induction module Ry+ is formed by connecting the magnetoresistance unit R17 and the magnetoresistance unit R26; the magnetic induction module Rz+ is formed by connecting the magnetoresistance unit R25 and the magnetoresistance unit R26, or by connecting the magnetoresistance unit R15 and the magnetoresistance unit R16; the magnetic induction module Rx- is formed by connecting the magnetoresistance unit R16 and the magnetoresistance unit R28; the magnetic induction module Ry- is formed by connecting the magnetoresistance unit R18 and the magnetoresistance unit R25; and the magnetic induction module Rz- is formed by connecting the magnetoresistance unit R27 and the magnetoresistance unit R28, or by connecting the magnetoresistance unit R17 and the magnetoresistance unit R18. Taking the magnetic induction modules Rx+ and Rx- as examples, the pinning components of the magnetic tunnel junctions in magnetoresistive units R15 and R27 in the Y and Z axes cancel each other out, leaving only the component in the positive X axis. Therefore, the magnetic induction module Rx+ is sensitive to the magnetic field in the X axis, and its resistance increases with increasing magnetic fields in the negative X axis. The pinning components of the magnetic tunnel junctions in magnetoresistive units R16 and R28 in the Y and Z axes cancel each other out, leaving only the component in the negative X axis. Therefore, the magnetic induction module Rx- is sensitive to the magnetic field in the X axis, and its resistance decreases with increasing magnetic fields in the negative X axis.

[0064] In one embodiment, the three-axis magnetic sensor can be configured as a dual chip, with the first ramp array 110 disposed on the first chip and the second ramp array 120 disposed on the second chip. After annealing each magnetic tunnel junction 140, the first and second chips are packaged together. The first and second chips are both disposed on a substrate and can be electrically connected via the substrate. The substrate can include an ASIC circuit that can process analog signals output by the first and / or second chips into digital signals and output the processed digital signals. By designing the connection method for the magnetic tunnel junctions 140 of the two chips with different pinning directions, combined with signal processing on the substrate, three-axis magnetic field sensing can be achieved for the X, Y, and Z axes. Alternatively, the substrate can be a silicon substrate. It is understood that in other embodiments, the three-axis magnetic sensor can also be configured as a single chip, with the first ramp array 110 and the second ramp array 120 disposed on the same chip.

[0065] In one embodiment, as shown in FIG10 , the three-axis magnetic sensor further includes a third slope array 310 and a fourth slope array 320 disposed on the substrate. The third slope array 310 and the fourth slope array 320 each include a plurality of slope structures 130. Each slope structure 130 includes a first slope and a second slope that are axially symmetrically arranged. Each slope structure 130 of the third slope array 310 extends along the second axis within the plane of the substrate, and each slope structure 130 of the fourth slope array 320 extends along the first axis within the plane of the substrate. A plurality of magnetic tunnels are provided. The junctions 140 are arranged on each slope structure 130 of the third slope array 310 and the fourth slope array 320, and the pinning direction of the magnetic tunnel junctions 140 located on the first slope is along the first slope direction, and the pinning direction of the magnetic tunnel junctions 140 located on the second slope is along the second slope direction; the magnetic tunnel junctions 140 with the same pinning direction are connected in series to form a magnetoresistive unit, and each magnetoresistive unit includes the same number of magnetic tunnel junctions, so that the magnetic tunnel junctions 140 located in the third slope array 310 and the fourth slope array 320 are correspondingly connected in series to form multiple magnetoresistive units.

[0066] Similarly, the slope structure 130 can be a boss or groove structure. Each slope structure 130 includes a first slope and a second slope arranged axially symmetrically, which means that the slope gradient of the slope structure 130 (the angle between the slope on which the magnetic tunnel junction 140 is placed and the plane where the first axis and the second axis are located) is α degrees, and the value of α can be set according to actual needs. Each slope structure 130 of the third slope array 310 extends along the second axis in the plane of the substrate, which means that the angle between the orthographic projection of each slope structure 130 of the third slope array 310 in the plane of the substrate and the positive direction of the first axis is 90 degrees. Each slope structure 130 of the fourth slope array 320 extends along the first axis in the plane of the substrate, which means that the angle between the orthographic projection of each slope structure 130 of the fourth slope array 320 in the plane of the substrate and the positive direction of the first axis is 0 degrees.

[0067] By setting the pinning directions of the multiple magnetic tunnel junctions 140 to be along the slope direction of the slope structure 130, the pinning directions of the multiple magnetic tunnel junctions 140 have a component along the Z-axis direction, which can induce a magnetic field in the Z-axis direction. Moreover, because the slope structure 130 with the same slope gradient is adopted, the pinning directions of the multiple magnetic tunnel junctions 140 in the Z-axis direction have equal components and are in the same or opposite directions. Furthermore, each of the multiple slope structures 130 of the third slope array 310 is configured to extend along the Y-axis direction within the plane of the substrate, so that the pinning directions of the magnetic tunnel junctions 140 located in the third slope array 310 have only equal and identical or opposite components along the X-axis direction within the plane of the substrate (i.e., within the XY plane), which can sense the magnetic field in the X-axis direction. Each of the multiple slope structures 130 of the fourth slope array 320 is configured to extend along the X-axis direction within the plane of the substrate, so that the pinning directions of the magnetic tunnel junctions 140 located in the fourth slope array 320 have only equal and identical or opposite components along the Y-axis direction within the plane of the substrate, which can sense the magnetic field in the Y-axis direction. In this way, magnetic tunnel junctions 140 with the same pinning direction are connected in series to form magnetoresistive units, and each magnetoresistive unit includes the same number of magnetic tunnel junctions 140. Consequently, the magnetic tunnel junctions 140 located in the third slope array 310 and the fourth slope array 320 are connected in series to form multiple magnetoresistive units. Furthermore, the magnetoresistive units located in the third slope array 310 change their resistance based on changes in the components of the external magnetic field in the X-axis and Z-axis directions, while the magnetoresistive units located in the fourth slope array 320 change their resistance based on changes in the components of the external magnetic field in the Y-axis and Z-axis directions. The resistance changes of the magnetoresistive units in the third slope array 310 have equal magnitudes and are in the same or opposite directions along the X-axis. The resistance changes of the magnetoresistive units in the fourth slope array 320 have equal magnitudes and are in the same or opposite directions along the Y-axis. The resistance changes of the magnetoresistive units in the third and fourth slope arrays 310 and 320 have equal magnitudes and are in the same or opposite directions along the Z-axis. Based on this, corresponding magnetoresistive units can be used to form a magnetic induction module according to actual needs.

[0068] In one embodiment, as shown in FIG10 , both the first and second inclined surfaces extend along the central axis H of the slope structures 130, allowing for the arrangement of as many magnetic tunnel junctions 140 as possible. Specifically, each of the plurality of slope structures 130 in the third slope array 310 is configured to extend along the Y-axis within the plane of the substrate, meaning that the central axis H of the slope structures 130 in the third slope array 310 extends along the Y-axis. Each of the plurality of slope structures 130 in the fourth slope array 320 is configured to extend along the X-axis within the plane of the substrate, meaning that the central axis H of the slope structures 130 in the fourth slope array 320 extends along the X-axis. The arrangement direction of the slope structures 130 in both the third and fourth slope arrays 310, 320 is perpendicular to the central axis H of the slope structures 130 within the plane of the substrate. The arrangement direction of the slope structures 130 in the third slope array 310 is perpendicular to the arrangement direction of the slope structures 130 in the fourth slope array 320. Specifically, the slope structures 130 in the third slope array 310 are arranged in an array along the X-axis direction, and the slope structures 130 in the fourth slope array 320 are arranged in an array along the Y-axis direction.

[0069] In one embodiment, the number of slope structures 130, the geometric dimensions of the slope structures 130, the number of magnetic tunnel junctions 140, and the geometric dimensions of the magnetic tunnel junctions 140 in the third slope array 310 and the fourth slope array 320 are all identical. Setting the geometric dimensions of the slope structures 130 / magnetic tunnel junctions 140 in the third slope array 310 and the fourth slope array 320 to be identical can mean that the geometric dimensions are exactly the same, or that the error in the geometric dimensions is within an allowable range. By designing the number and geometric dimensions of the slope structures 130 and the magnetic tunnel junctions 140 to be identical in the third slope array 310 and the fourth slope array 320, the fabrication of the slope structures 130 and the magnetic tunnel junctions 140 and the connection between the magnetic tunnel junctions 140 can be facilitated, and magnetic field detection can be more accurately performed.

[0070] In one embodiment, the pinning direction of the magnetic tunnel junction 140 located on the first slope of the slope structure 130 is upward along the first slope, and the pinning direction of the magnetic tunnel junction 140 located on the second slope of the slope structure 130 is downward along the second slope; alternatively, the pinning direction of the magnetic tunnel junction 140 located on the first slope of the slope structure 130 is downward along the first slope, and the pinning direction of the magnetic tunnel junction 140 located on the second slope of the slope structure 130 is upward along the second slope. Similarly, the pinning direction of the magnetic tunnel junction 140 can be determined by the annealing magnetic field. As shown in Figure 10, the black arrow represents the in-plane annealing direction. For the magnetic tunnel junctions 140 of the same slope structure 130, annealing can be performed in the plane of the substrate along a direction perpendicular to the central axis H of the slope structure 130, so that the pinning direction of the magnetic tunnel junction 140 located on the first slope is upward along the first slope, and the pinning direction of the magnetic tunnel junction 140 located on the second slope is downward along the second slope; or, the pinning direction of the magnetic tunnel junction 140 located on the first slope is downward along the first slope, and the pinning direction of the magnetic tunnel junction 140 located on the second slope is upward along the second slope.

[0071] Specifically, the third slope array 310 is divided into a first region 31 and a second region 32, and the fourth slope array 320 is divided into a third region 33 and a fourth region 34. The pinning direction of the magnetic tunnel junctions 140 on the slope structure 130 in the first and third regions 31 and 33 is upward along the first slope for those located on the first slope surface, and downward along the second slope for those located on the second slope surface. The pinning direction of the magnetic tunnel junctions 140 on the slope structure 130 in the second and fourth regions 32 and 34 is downward along the first slope for those located on the first slope surface, and upward along the second slope for those located on the second slope surface. As shown in Figures 10 and 11, taking the slope structure 130 as a platform as an example, the first and third regions 31 and 33 are annealed perpendicular to the central axis H of the slope structure 130, and from the first slope W1 to the second slope W2 of the slope structure 130. The second region 32 and the fourth region 34 are annealed perpendicular to the central axis H of the slope structure 130 and from the second inclined surface W2 toward the first inclined surface W1 of the slope structure 130. It will be appreciated that if the slope structure 130 is designed as a groove, the annealing is still performed perpendicular to the central axis H of the slope structure 130, but in the opposite direction along the inclined surface of the slope structure 130. For example, with respect to the first region 31, when the slope structure 130 is designed as a groove, the annealing is performed perpendicular to the central axis H of the slope structure 130 and from the second inclined surface toward the first inclined surface of the slope structure 130. This ensures that the pinning directions of the magnetic tunnel junctions 140 on the slope structure 130 are such that the magnetic tunnel junctions 140 located on the first inclined surface are upward along the first inclined surface, and the magnetic tunnel junctions 140 located on the second inclined surface are downward along the second inclined surface.

[0072] 10 and 11 , also taking the design of the slope structure 130 as a boss as an example, the pinning directions of the magnetic tunnel junctions 140 on the slope structures 130 in the first region 31 and the third region 33 are that the magnetic tunnel junctions 140 located on the first slope W1 are upward along the first slope, and the magnetic tunnel junctions 140 located on the second slope W2 are downward along the second slope; the pinning directions of the magnetic tunnel junctions 140 on the slope structures 130 in the second region 32 and the fourth region 34 are that the magnetic tunnel junctions 140 located on the first slope W1 are downward along the first slope, and the magnetic tunnel junctions 140 located on the second slope are upward along the second slope W2. In this way, the pinning directions of the magnetic tunnel junctions 140 on the first inclined surface W1 and the second inclined surface W2 of the slope structure 130 located in the first region 31 both have a component along the positive direction of the X-axis, the pinning directions of the magnetic tunnel junctions 140 on the first inclined surface W1 and the second inclined surface W2 of the slope structure 130 located in the second region 32 both have a component along the negative direction of the X-axis, the pinning directions of the magnetic tunnel junctions 140 on the first inclined surface W1 and the second inclined surface W2 of the slope structure 130 located in the third region 33 both have a component along the positive direction of the Y-axis, and the pinning directions of the magnetic tunnel junctions 140 on the first inclined surface W1 and the second inclined surface W2 of the slope structure 130 located in the fourth region 44 both have a component along the negative direction of the Y-axis. The pinning directions of the magnetic tunnel junction 140 on the first slope W1 of the slope structure 130 located in the first region 31 and the third region 33 and the magnetic tunnel junction 140 on the second slope W2 of the slope structure 130 located in the second region 32 and the fourth region 34 both have a component along the positive direction of the Z axis, and the pinning directions of the magnetic tunnel junction 140 on the second slope W2 of the slope structure 130 located in the first region 31 and the third region 33 and the magnetic tunnel junction 140 on the first slope W1 of the slope structure 130 located in the second region 32 and the fourth region 34 both have a component along the negative direction of the Z axis.

[0073] Specifically, the magnetic tunnel junctions 140 on the first slope W1 of the slope structure 130 of the first region 31 are connected in series to form a magnetoresistance unit R31; the magnetic tunnel junctions 140 on the second slope W2 of the slope structure 130 of the first region 31 are connected in series to form a magnetoresistance unit R32; the magnetic tunnel junctions 140 on the first slope W1 of the slope structure 130 of the second region 32 are connected in series to form a magnetoresistance unit R34; the magnetic tunnel junctions 140 on the second slope W2 of the slope structure 130 of the second region 32 are connected in series to form a magnetoresistance unit R33. The magnetic tunnel junctions 140 on the first slope W1 of the slope structure 130 of the third region 33 are connected in series to form a magnetoresistive unit R41; the magnetic tunnel junctions 140 on the second slope W2 of the slope structure 130 of the third region 33 are connected in series to form a magnetoresistive unit R42; the magnetic tunnel junctions 140 on the first slope W1 of the slope structure 130 of the fourth region 34 are connected in series to form a magnetoresistive unit R44; the magnetic tunnel junctions 140 on the second slope W2 of the slope structure 130 of the fourth region 34 are connected in series to form a magnetoresistive unit R43.

[0074] As shown in Figures 10 and 11, taking the slope structure 130 using a boss as an example, the pinning directions of the magnetic tunnel junctions 140 in the magnetoresistance units R31, R32, R33, and R34 have components only in the X-axis and Z-axis, and the component directions of the pinning direction of the magnetic tunnel junction 140 in the magnetoresistance unit R31 are +X and +Z, the component directions of the pinning direction of the magnetic tunnel junction 140 in the magnetoresistance unit R32 are +X and -Z, the component directions of the pinning direction of the magnetic tunnel junction 140 in the magnetoresistance unit R33 are -X and +Z, and the component directions of the pinning direction of the magnetic tunnel junction 140 in the magnetoresistance unit R34 are -X and -Z. The pinning directions of the magnetic tunnel junctions 140 in the magnetoresistance units R41, R42, R43, and R44 have components only in the Y-axis and the Z-axis, and the component directions of the pinning direction of the magnetic tunnel junction 140 in the magnetoresistance unit R41 are +Y and +Z, the component directions of the pinning direction of the magnetic tunnel junction 140 in the magnetoresistance unit R42 are +Y and -Z, the component directions of the pinning direction of the magnetic tunnel junction 140 in the magnetoresistance unit R43 are -Y and +Z, and the component directions of the pinning direction of the magnetic tunnel junction 140 in the magnetoresistance unit R44 are -Y and -Z.

[0075] As shown in Figure 12, the magnetic induction module Rx+ is formed by connecting the magnetoresistance unit R31 and the magnetoresistance unit R32; the magnetic induction module Ry+ is formed by connecting the magnetoresistance unit R41 and the magnetoresistance unit R42; the magnetic induction module Rz+ is formed by connecting the magnetoresistance unit R31 and the magnetoresistance unit R33, or by connecting the magnetoresistance unit R41 and the magnetoresistance unit R43; the magnetic induction module Rx- is formed by connecting the magnetoresistance unit R33 and the magnetoresistance unit R34; the magnetic induction module Ry- is formed by connecting the magnetoresistance unit R43 and the magnetoresistance unit R44; the magnetic induction module Rz- is formed by connecting the magnetoresistance unit R42 and the magnetoresistance unit R44, or by connecting the magnetoresistance unit R32 and the magnetoresistance unit R34. Taking magnetic induction modules Rx+ and Rx- as examples, the pinning components of the magnetic tunnel junctions in magnetoresistive units R31 and R32 along the Z-axis cancel each other out, leaving only the component in the positive X-axis direction. Magnetic induction module Rx+ is sensitive to magnetic fields in the X-axis direction, and its resistance increases with increasing magnetic fields in the negative X-axis direction. The pinning components of the magnetic tunnel junctions in magnetoresistive units R33 and R34 along the Z-axis cancel each other out, leaving only the component in the negative X-axis direction. Magnetic induction module Rx- is sensitive to magnetic fields in the X-axis direction, and its resistance decreases with increasing magnetic fields in the negative X-axis direction.

[0076] In one embodiment, the pinning directions of the magnetic tunnel junctions 140 located on the first and second sloped surfaces of the slope structure 130 are both upward along the sloped surfaces, or the pinning directions of the magnetic tunnel junctions 140 located on the first and second sloped surfaces of the slope structure 130 are both downward along the sloped surfaces. The pinning directions of the magnetic tunnel junctions 140 can be determined by the annealing magnetic field. As shown in FIG13 , the black arrow indicates the out-of-plane annealing direction. For the same slope structure 130, annealing is performed in a direction perpendicular to the substrate plane (i.e., along the Z-axis direction) so that the pinning directions of the magnetic tunnel junctions 140 located on the first and second sloped surfaces are both upward along the sloped surfaces, or both downward along the sloped surfaces.

[0077] Specifically, the third slope array 310 is divided into a first region 31 and a second region 32, and the fourth slope array 320 is divided into a third region 33 and a fourth region 34. The pinning direction of the magnetic tunnel junctions on the slope structures in the first and third regions 31 and 33 is upward along the slope surface; the pinning direction of the magnetic tunnel junctions on the slope structures in the second and fourth regions 32 and 34 is downward along the slope surface. For example, using the slope structure 130 as a platform, the magnetic tunnel junctions 140 on the slope structures 130 in the first and third regions 31 and 33 are annealed in an upward direction perpendicular to the substrate plane; the magnetic tunnel junctions 140 on the slope structures 130 in the second and fourth regions 32 and 34 are annealed in a downward direction perpendicular to the substrate plane. It can be understood that if the slope structure 130 is designed as a groove, the magnetic tunnel junction 140 on the slope structure 130 in the first region 31 and the third region 33 is still annealed in a direction perpendicular to the substrate plane and upward; the magnetic tunnel junction 140 on the slope structure 130 in the second region 32 and the fourth region 34 is still annealed in a direction perpendicular to the substrate plane and downward.

[0078] Referring to Figures 14 and 15 , also taking the example of a slope structure 130 designed as a boss, the pinning directions of the magnetic tunnel junctions 140 on the slope structure 130 in the first region 31 and the third region 33 are both upward along the slope, while the pinning directions of the magnetic tunnel junctions 140 on the slope structure 130 in the second region 32 and the fourth region 34 are both downward along the slope. Thus, in the first region 31, the pinning direction of the magnetic tunnel junctions 140 on the first slope of the slope structure 130 has a component along the positive X-axis direction and a component along the positive Z-axis direction, while the pinning direction of the magnetic tunnel junctions 140 on the second slope of the slope structure 130 has a component along the negative X-axis direction and a component along the positive Z-axis direction. In the second region 12, the pinning direction of the magnetic tunnel junction 140 on the first slope surface of the slope structure 130 has a component along the negative X-axis direction and a component along the negative Z-axis direction, while the pinning direction of the magnetic tunnel junction 140 on the second slope surface of the slope structure 130 has a component along the positive X-axis direction and a component along the negative Z-axis direction. In the third region 13, the pinning direction of the magnetic tunnel junction 140 on the first slope surface of the slope structure 130 has a component along the positive Y-axis direction and a component along the positive Z-axis direction, while the pinning direction of the magnetic tunnel junction 140 on the second slope surface of the slope structure 130 has a component along the negative Y-axis direction and a component along the positive Z-axis direction. In the fourth region 34, the pinning direction of the magnetic tunnel junction 140 on the first slope surface of the slope structure 130 has a component along the negative Y-axis direction and a component along the negative Z-axis direction, while the pinning direction of the magnetic tunnel junction 140 on the second slope surface of the slope structure 130 has a component along the positive Y-axis direction and a component along the negative Z-axis direction.

[0079] The magnetic tunnel junctions 140 on the first slope of the slope structure 130 in the first region 31 are connected in series to form a magnetoresistive unit R35; the magnetic tunnel junctions 140 on the second slope of the slope structure 130 in the first region 31 are connected in series to form a magnetoresistive unit R36; the magnetic tunnel junctions 140 on the first slope of the slope structure 130 in the second region 32 are connected in series to form a magnetoresistive unit R38; and the magnetic tunnel junctions 140 on the second slope of the slope structure 130 in the second region 32 are connected in series to form a magnetoresistive unit R37. The magnetic tunnel junctions 140 on the first slope of the slope structure 130 in the third region 33 are connected in series to form a magnetoresistive unit R45; the magnetic tunnel junctions 140 on the second slope of the slope structure 130 in the third region 33 are connected in series to form a magnetoresistive unit R46; the magnetic tunnel junctions 140 on the first slope of the slope structure 130 in the fourth region 34 are connected in series to form a magnetoresistive unit R48; and the magnetic tunnel junctions 140 on the second slope of the slope structure 130 in the fourth region 34 are connected in series to form a magnetoresistive unit R47.

[0080] Taking the ramp structure 130 as an example, the pinning direction components of the magnetic tunnel junction 140 in the magnetoresistive unit R35 on the three axes are +X and +Z, respectively. The pinning direction components of the magnetic tunnel junction 140 in the magnetoresistive unit R36 on the three axes are -X and +Z, respectively. The pinning direction components of the magnetic tunnel junction 140 in the magnetoresistive unit R37 on the three axes are +X and -Z, respectively. The pinning direction components of the magnetic tunnel junction 140 in the magnetoresistive unit R38 on the three axes are -X and -Z, respectively. The pinning direction components of the magnetic tunnel junction 140 in the magnetoresistive unit R45 on the three axes are +Y and +Z, respectively. The pinning direction components of the magnetic tunnel junction 140 in the magnetoresistive unit R46 on the three axes are -Y and +Z, respectively. The pinning direction components of the magnetic tunnel junction 140 in the magnetoresistive unit R47 on the three axes are +Y and -Z, respectively. The component directions of the pinning direction of the magnetic tunnel junction 140 in the magnetoresistive unit R48 on three axes are -Y and -Z respectively.

[0081] As shown in Figure 16, the magnetic induction module Rx+ is formed by connecting the magnetoresistance unit R35 and the magnetoresistance unit R37; the magnetic induction module Ry+ is formed by connecting the magnetoresistance unit R45 and the magnetoresistance unit R47; the magnetic induction module Rz+ is formed by connecting the magnetoresistance unit R35 and the magnetoresistance unit R36, or by connecting the magnetoresistance unit R45 and the magnetoresistance unit R46; the magnetic induction module Rx- is formed by connecting the magnetoresistance unit R36 and the magnetoresistance unit R38; the magnetic induction module Ry- is formed by connecting the magnetoresistance unit R46 and the magnetoresistance unit R48; the magnetic induction module Rz- is formed by connecting the magnetoresistance unit R47 and the magnetoresistance unit R48, or by connecting the magnetoresistance unit R37 and the magnetoresistance unit R38. Taking the magnetic induction modules Rx+ and Rx- as examples, the pinning components of the magnetic tunnel junctions in magnetoresistive units R35 and R37 along the Z-axis cancel each other out, leaving only the component in the positive X-axis direction. Therefore, the magnetic induction module Rx+ is sensitive to the magnetic field in the X-axis direction, and its resistance increases as the magnetic field in the negative X-axis direction increases. Furthermore, the pinning components of the magnetic tunnel junctions in magnetoresistive units R36 and R38 along the Z-axis cancel each other out, leaving only the component in the negative X-axis direction. Therefore, the magnetic induction module Rx- is sensitive to the magnetic field in the X-axis direction, and its resistance decreases as the magnetic field in the negative X-axis direction increases.

[0082] In one embodiment, the three-axis magnetic sensor can be configured as a dual chip, with the third ramp array 310 disposed on the first chip and the fourth ramp array 320 disposed on the second chip. After annealing each magnetic tunnel junction 140, the first and second chips are packaged together. The first and second chips are both disposed on a substrate and can be electrically connected via the substrate. The substrate can include an ASIC circuit that can process analog signals output by the first and / or second chips into digital signals and output the processed digital signals. By designing the connection method for the magnetic tunnel junctions 140 of the two chips with different pinning directions, combined with signal processing on the substrate, three-axis magnetic field sensing can be achieved for the X, Y, and Z axes. Alternatively, the substrate can be a silicon substrate. It is understood that in other embodiments, the three-axis magnetic sensor can also be configured as a single chip, with the third ramp array 310 and the fourth ramp array 320 disposed on the same chip.

[0083] In one embodiment, the three-axis magnetic sensor further includes a fifth slope array disposed on the substrate, the fifth slope array including a plurality of slope structures, each of which includes a first slope and a second slope arranged axially symmetrically; an angle between an orthographic projection of each slope structure of the fifth slope array in the plane of the substrate and the negative direction of the first axis is greater than 0° and less than 180°; a plurality of magnetic tunnel junctions are respectively disposed on the slope structures of the fifth slope array and the plane of the substrate, wherein the pinning direction of the magnetic tunnel junctions located on the first slope is along the direction of the first slope, the pinning direction of the magnetic tunnel junctions located on the second slope is along the direction of the second slope, and the pinning direction of the magnetic tunnel junctions located on the plane is along the direction of the second axis; the magnetic tunnel junctions with the same pinning direction are connected in series to form a magnetoresistive unit, and each magnetoresistive unit includes the same number of magnetic tunnel junctions, such that the magnetic tunnel junctions located in the fifth slope array and the magnetic tunnel junctions located in the plane are respectively connected in series to form a plurality of magnetoresistive units.

[0084] Specifically, as shown in FIG17 , in the fifth slope array, the angle β between the orthographic projection of the slope structure within the plane of the substrate and the negative direction of the first axis can be set according to actual needs, and 0°<β<180°. That is, the slope structure is not parallel to the first axis, and the first and second slopes of the slope structure both extend along the central axis H. Similarly, the geometric dimensions of the slope structure and the magnetic tunnel junctions in the fifth slope array are the same.

[0085] In one embodiment, the fifth slope array is divided into a first region 51 and a second region 52. The pinning direction of the magnetic tunnel junctions in the slope structure of the first region 51 is such that the magnetic tunnel junctions located on the first slope face are pinned upward along the first slope face, while the magnetic tunnel junctions located on the second slope face are pinned downward along the second slope face. The pinning direction of the magnetic tunnel junctions in the slope structure of the second region 52 is such that the magnetic tunnel junctions located on the first slope face are pinned downward along the first slope face, while the magnetic tunnel junctions located on the second slope face are pinned upward along the second slope face. Furthermore, the planar structure is divided into a third region (not labeled) and a fourth region (not labeled). The pinning direction of the magnetic tunnel junctions located in the third region is pinned along the positive direction of the second axis, while the pinning direction of the magnetic tunnel junctions located in the fourth region is pinned along the negative direction of the second axis.

[0086] Specifically, the magnetic tunnel junctions on the first slope of the slope structure of the first region 51 are connected in series to form a magnetoresistive unit R51; the magnetic tunnel junctions on the second slope of the slope structure of the first region 51 are connected in series to form a magnetoresistive unit R52; the magnetic tunnel junctions on the first slope of the slope structure of the second region 52 are connected in series to form a magnetoresistive unit 54; the magnetic tunnel junctions on the second slope of the slope structure of the second region 52 are connected in series to form a magnetoresistive unit R53; the magnetic tunnel junctions on the third planar region are connected in series to form a magnetoresistive unit R61; and the magnetic tunnel junctions on the fourth planar region are connected in series to form a magnetoresistive unit R62. If the slope structure is designed as a boss, the magnetoresistive units R61 and R62 can be arranged on the top plane of the boss; if the slope structure is designed as a groove, the magnetoresistive units R61 and R62 can be arranged on the bottom plane of the groove; the magnetoresistive units R61 and R62 can also be arranged on the plane of an area on the substrate where the slope structure is not provided.

[0087] Taking the ramp structure designed as a boss as an example, when 0°<β<90°, the pinning direction components of the magnetic tunnel junction in magnetoresistive unit R51 on the three axes are +X, +Y, and +Z, respectively. The pinning direction components of the magnetic tunnel junction in magnetoresistive unit R52 on the three axes are +X, +Y, and -Z, respectively. The pinning direction components of the magnetic tunnel junction in magnetoresistive unit R53 on the three axes are -X, -Y, and +Z, respectively. The pinning direction components of the magnetic tunnel junction in magnetoresistive unit R54 on the three axes are -X, -Y, and -Z, respectively. When β=90°, the pinning direction components of the magnetic tunnel junction in magnetoresistive unit R51 on the three axes are +X and +Z, respectively. The pinning direction components of the magnetic tunnel junction in magnetoresistive unit R52 on the three axes are +X and -Z, respectively. The pinning direction components of the magnetic tunnel junction in magnetoresistive unit R53 on the three axes are -X and +Z, respectively. The pinning direction components of the magnetic tunnel junction in magnetoresistive unit R54 on the three axes are -X and -Z, respectively. When 90°<β<180°, the pinning direction components of the magnetic tunnel junction in magnetoresistive unit R51 on the three axes are +X, -Y, and +Z, respectively. The pinning direction components of the magnetic tunnel junction in magnetoresistive unit R52 on the three axes are +X, -Y, and -Z, respectively. The pinning direction components of the magnetic tunnel junction in magnetoresistive unit R53 on the three axes are -X, +Y, and +Z, respectively. The pinning direction components of the magnetic tunnel junction in magnetoresistive unit R54 on the three axes are -X, +Y, and -Z, respectively. The pinning direction of the magnetic tunnel junction in magnetoresistive unit R61 is +Y, and the pinning direction of the magnetic tunnel junction in magnetoresistive unit R62 is -Y.

[0088] As shown in Figure 18, taking the slope structure designed as a boss and 0°<β<90° as an example, the magnetic induction module Rx+ is formed by connecting the magnetoresistance unit R51, the magnetoresistance unit R52 and the magnetoresistance unit R62; the magnetic induction module Ry+ is formed by connecting the magnetoresistance unit R61; the magnetic induction module Rz+ is formed by connecting the magnetoresistance unit R51 and the magnetoresistance unit R53; the magnetic induction module Rx- is formed by connecting the magnetoresistance unit R53, the magnetoresistance unit R54 and the magnetoresistance unit R61; the magnetic induction module Ry- is formed by connecting the magnetoresistance unit R62; and the magnetic induction module Rz- is formed by connecting the magnetoresistance unit R52 and the magnetoresistance unit R54. Taking magnetic induction modules Rx+ and Rx- as examples, the pinning components of the magnetic tunnel junctions in magnetoresistive units R51, R52, and R62 in the Y and Z axes cancel each other out, leaving only the component in the positive X axis. Therefore, magnetic induction module Rx+ is sensitive to magnetic fields in the X axis, and its resistance increases with increasing magnetic fields in the negative X axis. In contrast, the pinning components of the magnetic tunnel junctions in magnetoresistive units R53, R54, and R61 in the Y and Z axes cancel each other out, leaving only the component in the negative X axis. Therefore, magnetic induction module Rx- is sensitive to magnetic fields in the X axis, and its resistance decreases with increasing magnetic fields in the negative X axis.

[0089] It can be understood that when β=90° or 90°<β<180°, it is sufficient to perform corresponding combinations according to the components of the pinning directions of the magnetic tunnel junctions in each magnetoresistive unit on the three axes, which will not be described in detail here.

[0090] In one embodiment, the three-axis magnetic sensor further includes a sixth slope array disposed on the substrate, the sixth slope array including a plurality of slope structures, each of which includes a first slope and a second slope arranged axially symmetrically. An angle between an orthographic projection of each slope structure of the sixth slope array within the plane of the substrate and the negative direction of the first axis is greater than or equal to 0°, less than or equal to 180°, and not equal to 90°. A plurality of magnetic tunnel junctions are respectively disposed on the slope structures of the sixth slope array and the plane of the substrate, wherein the pinning direction of the magnetic tunnel junctions located on the first slope is along the direction of the first slope, the pinning direction of the magnetic tunnel junctions located on the second slope is along the direction of the second slope, and the pinning direction of the magnetic tunnel junctions located on the plane is along the direction of the first axis. The magnetic tunnel junctions having the same pinning direction are connected in series to form a magnetoresistive unit, and each magnetoresistive unit includes the same number of magnetic tunnel junctions, such that the magnetic tunnel junctions located in the sixth slope array and the magnetic tunnel junctions located in the plane are respectively connected in series to form a plurality of magnetoresistive units.

[0091] Specifically, as shown in FIG19 , in the sixth slope array, the angle β between the orthographic projection of the slope structure within the plane of the substrate and the negative direction of the first axis can be set according to actual needs, and is 0°≤β<90° and 90°<β≤180°. That is, the slope structure is not parallel to the second axis, and the first and second slopes of the slope structure both extend along the central axis H. Similarly, the geometric dimensions of the slope structure and the magnetic tunnel junction in the sixth slope array are the same.

[0092] In one embodiment, the sixth slope array is divided into a first region 61 and a second region 62. The pinning direction of the magnetic tunnel junctions in the slope structure of the first region 61 is such that the magnetic tunnel junctions located on the first slope face are pinned upward along the first slope face, and the magnetic tunnel junctions located on the second slope face are pinned downward along the second slope face. The pinning direction of the magnetic tunnel junctions in the slope structure of the second region 62 is such that the magnetic tunnel junctions located on the first slope face are pinned downward along the first slope face, and the magnetic tunnel junctions located on the second slope face are pinned upward along the second slope face. Furthermore, the sixth slope array is divided into a third region (not labeled) and a fourth region (not labeled) in the plane. The pinning direction of the magnetic tunnel junctions located in the third region is pinned along the positive direction of the first axis, and the pinning direction of the magnetic tunnel junctions located in the fourth region is pinned along the negative direction of the first axis.

[0093] Specifically, the magnetic tunnel junctions on the first slope of the slope structure of the first region 61 are connected in series to form a magnetoresistive unit 55; the magnetic tunnel junctions on the second slope of the slope structure of the first region 61 are connected in series to form a magnetoresistive unit R56; the magnetic tunnel junctions on the first slope of the slope structure of the second region 62 are connected in series to form a magnetoresistive unit R58; the magnetic tunnel junctions on the second slope of the slope structure of the second region 62 are connected in series to form a magnetoresistive unit R57; the magnetic tunnel junctions on the plane of the third region are connected in series to form a magnetoresistive unit R63; and the magnetic tunnel junctions on the plane of the fourth region are connected in series to form a magnetoresistive unit R64. If the slope structure is designed as a boss, the magnetoresistive units R63 and R64 can be arranged on the top plane of the boss; if the slope structure is designed as a groove, the magnetoresistive units R63 and R64 can be arranged on the bottom plane of the groove; the magnetoresistive units R63 and R64 can also be arranged on the plane of an area on the substrate where the slope structure is not provided.

[0094] Taking the ramp structure designed as a boss as an example, when 0°<β<90°, the components of the pinning direction of the magnetic tunnel junction in the magnetoresistive unit R55 on the three axes are +X, +Y, and +Z, respectively. The components of the pinning direction of the magnetic tunnel junction in the magnetoresistive unit R56 on the three axes are +X, +Y, and -Z, respectively. The components of the pinning direction of the magnetic tunnel junction in the magnetoresistive unit R57 on the three axes are -X, -Y, and +Z, respectively. The components of the pinning direction of the magnetic tunnel junction in the magnetoresistive unit R58 on the three axes are -X, -Y, and -Z, respectively. When 90°<β<180°, the components of the pinning direction of the magnetic tunnel junction in the magnetoresistive unit R55 on the three axes are +X, -Y, and +Z, respectively. The components of the pinning direction of the magnetic tunnel junction in the magnetoresistive unit R56 on the three axes are +X, -Y, and -Z, respectively. The pinning direction components of the magnetic tunnel junction in magnetoresistive unit R57 on the three axes are -X, +Y, and +Z, respectively. The pinning direction components of the magnetic tunnel junction in magnetoresistive unit R58 on the three axes are -X, +Y, and -Z, respectively. When β = 0°, the pinning direction components of the magnetic tunnel junction in magnetoresistive unit R55 on the three axes are +Y and +Z, respectively. The pinning direction components of the magnetic tunnel junction in magnetoresistive unit R56 on the three axes are +Y and -Z, respectively. The pinning direction components of the magnetic tunnel junction in magnetoresistive unit R57 on the three axes are -Y and +Z, respectively. The pinning direction components of the magnetic tunnel junction in magnetoresistive unit R58 on the three axes are -Y and -Z, respectively. When β = 180°, the pinning direction components of the magnetic tunnel junction in magnetoresistive unit R55 on the three axes are -Y and +Z, respectively. The pinning direction components of the magnetic tunnel junction in magnetoresistive unit R56 on the three axes are -Y and -Z, respectively. The pinning direction of the magnetic tunnel junction in magnetoresistive unit R57 has components in the directions of +Y and +Z along the three axes. The pinning direction of the magnetic tunnel junction in magnetoresistive unit R58 has components in the directions of +Y and -Z along the three axes. The pinning direction of the magnetic tunnel junction in magnetoresistive unit R63 is +X, and the pinning direction of the magnetic tunnel junction in magnetoresistive unit R64 is -X.

[0095] As shown in Figure 20, taking the slope structure designed as a boss and 0°<β<90° as an example, the magnetic induction module Rx+ is formed by the magnetoresistance unit R63; the magnetic induction module Ry+ is formed by connecting the magnetoresistance unit R55, the magnetoresistance unit R56 and the magnetoresistance unit R64; the magnetic induction module Rz+ is formed by connecting the magnetoresistance unit R55 and the magnetoresistance unit R57; the magnetic induction module Rx- is formed by connecting the magnetoresistance unit R64; the magnetic induction module Ry- is formed by connecting the magnetoresistance unit R57, the magnetoresistance unit R58 and the magnetoresistance unit R63; and the magnetic induction module Rz- is formed by connecting the magnetoresistance unit R56 and the magnetoresistance unit R58.

[0096] It can be understood that when 90°<β<180° or β=0° or β=180°, it is sufficient to perform corresponding combinations according to the components of the pinning directions of the magnetic tunnel junctions in each magnetoresistive unit on the three axes, which will not be described in detail here.

[0097] The technical features of the above embodiments can be combined arbitrarily. To make the description concise, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0098] The above embodiments merely illustrate several implementations of the present invention, and while the descriptions are relatively specific and detailed, they should not be construed as limiting the scope of the patent. It should be noted that a person skilled in the art would be able to make various modifications and improvements without departing from the spirit of the present invention, all of which fall within the scope of protection of the present invention. Therefore, the scope of protection of the patent for this invention shall be determined by the appended claims.

Claims

1. A three-axis magnetic sensor, characterized in that: The invention comprises a substrate and two magnetic induction strings arranged on the substrate, each of the magnetic induction strings comprises one of the magnetic induction modules Rx+ and the magnetic induction module Rx-, one of the magnetic induction modules Ry+ and the magnetic induction module Ry-, one of the magnetic induction modules Rz+ and the magnetic induction module Rz-, the other of the magnetic induction modules Rx+ and the magnetic induction module Rx-, the other of the magnetic induction modules Ry+ and the magnetic induction module Ry-, and the other of the magnetic induction modules Rz+ and the magnetic induction module Rz-, wherein the first magnetic induction module and the last magnetic induction module of one magnetic induction string are respectively connected to the last magnetic induction module and the first magnetic induction module of the other magnetic induction string; the magnetic induction module Rx+ is sensitive to the magnetic field in the first axis direction, and its resistance increases as the magnetic field in the first axis direction increases; the magnetic induction module Rx- is sensitive to the magnetic field in the first axis direction. , and the resistance decreases as the magnetic field in the direction of the first axis increases; the magnetic induction module Ry+ is sensitive to the magnetic field in the direction of the second axis, and the resistance increases as the magnetic field in the direction of the second axis increases, the magnetic induction module Ry- is sensitive to the magnetic field in the direction of the second axis, and the resistance decreases as the magnetic field in the direction of the second axis increases; the magnetic induction module Rz+ is sensitive to the magnetic field in the direction of the third axis, and the resistance increases as the magnetic field in the direction of the third axis increases, the magnetic induction module Rz- is sensitive to the magnetic field in the direction of the third axis, and the resistance decreases as the magnetic field in the direction of the third axis increases; terminals are provided between any two adjacent magnetic induction modules, and by switching the states of the terminals, every three adjacent magnetic induction modules form a bridge arm of a Wheatstone bridge to realize the detection of a three-axis magnetic field; the first axis, the second axis and the third axis are perpendicular to each other, and the third axis is also perpendicular to the plane of the substrate.

2. The three-axis magnetic sensor according to claim 1, wherein: The magnetic induction module Rx+, the magnetic induction module Rx-, the magnetic induction module Ry+ and the magnetic induction module Ry- are respectively formed by combining one or more magnetoresistive units; the magnetic induction module Rz+ and the magnetic induction module Rz- are respectively formed by combining multiple magnetoresistive units.

3. The three-axis magnetic sensor according to claim 2, wherein: The present invention also includes a first slope array and a second slope array arranged on the substrate, wherein the first slope array and the second slope array each include a plurality of slope structures, each of the slope structures including a first slope and a second slope arranged axially symmetrically; the angle between the orthographic projection of each slope structure of the first slope array in the plane of the substrate and the negative direction of the first axis is equal to the angle between the orthographic projection of each slope structure of the second slope array in the plane of the substrate and the positive direction of the first axis, and the angle is greater than 0° and less than 90°; a plurality of magnetic tunnel junctions are arranged on each slope structure of the first slope array and the second slope array, and the pinning direction of the magnetic tunnel junction located on the first slope is along the direction of the first slope, and the pinning direction of the magnetic tunnel junction located on the second slope is along the direction of the second slope; the magnetic tunnel junctions with the same pinning direction are connected in series to form the magnetoresistive unit, and each magnetoresistive unit includes the same number of magnetic tunnel junctions, so that the magnetic tunnel junctions located in the first slope array and the second slope array are connected in series to form a plurality of magnetoresistive units.

4. The three-axis magnetic sensor according to claim 3, wherein: The first slope array is divided into a first area and a second area, and the second slope array is divided into a third area and a fourth area; The pinning directions of the magnetic tunnel junctions on the slope structures of the first region and the third region are both such that the magnetic tunnel junctions located on the first slope face are upward along the first slope face, and the magnetic tunnel junctions located on the second slope face are downward along the second slope face; the pinning directions of the magnetic tunnel junctions on the slope structures of the second region and the fourth region are both such that the magnetic tunnel junctions located on the first slope face are downward along the first slope face, and the magnetic tunnel junctions located on the second slope face are upward along the second slope face; The magnetic tunnel junctions on the first slope of the slope structure of the first region are connected in series to form a magnetoresistive unit R11; the magnetic tunnel junctions on the second slope of the slope structure of the first region are connected in series to form a magnetoresistive unit R12; the magnetic tunnel junctions on the first slope of the slope structure of the second region are connected in series to form a magnetoresistive unit R14; and the magnetic tunnel junctions on the second slope of the slope structure of the second region are connected in series to form a magnetoresistive unit R13. The magnetic tunnel junctions on the first slope of the slope structure of the third region are connected in series to form a magnetoresistive unit R21; the magnetic tunnel junctions on the second slope of the slope structure of the third region are connected in series to form a magnetoresistive unit R22; the magnetic tunnel junctions on the first slope of the slope structure of the fourth region are connected in series to form a magnetoresistive unit R24; and the magnetic tunnel junctions on the second slope of the slope structure of the fourth region are connected in series to form a magnetoresistive unit R23. The magnetic induction module Rx+, the magnetic induction module Ry+, the magnetic induction module Rz+, the magnetic induction module Rx-, the magnetic induction module Ry-, and the magnetic induction module Rz- are respectively formed by connecting one or more of the magnetic resistance units R11, R12, R13, R14, R21, R22, R23, and R24.

5. The three-axis magnetic sensor according to claim 3, wherein: The first slope array is divided into a first area and a second area, and the second slope array is divided into a third area and a fourth area; The pinning directions of the magnetic tunnel junctions on the slope structures of the first region and the third region are both upward along the slope; the pinning directions of the magnetic tunnel junctions on the slope structures of the second region and the fourth region are both downward along the slope; The magnetic tunnel junctions on the first slope of the slope structure in the first region are connected in series to form a magnetoresistive unit R15; the magnetic tunnel junctions on the second slope of the slope structure in the first region are connected in series to form a magnetoresistive unit R16; the magnetic tunnel junctions on the first slope of the slope structure in the second region are connected in series to form a magnetoresistive unit R18; and the magnetic tunnel junctions on the second slope of the slope structure in the second region are connected in series to form a magnetoresistive unit R17. The magnetic tunnel junctions on the first slope of the slope structure of the third region are connected in series to form a magnetoresistive unit R25; the magnetic tunnel junctions on the second slope of the slope structure of the third region are connected in series to form a magnetoresistive unit R26; the magnetic tunnel junctions on the first slope of the slope structure of the fourth region are connected in series to form a magnetoresistive unit R28; and the magnetic tunnel junctions on the second slope of the slope structure of the fourth region are connected in series to form a magnetoresistive unit R27. The magnetic induction module Rx+, the magnetic induction module Ry+, the magnetic induction module Rz+, the magnetic induction module Rx-, the magnetic induction module Ry- and the magnetic induction module Rz- are respectively formed by connecting one or more of the magnetic resistance units R15, R16, R17, R18, R25, R26, R27 and R28.

6. The three-axis magnetic sensor according to claim 2, wherein: The present invention also includes a third slope array and a fourth slope array arranged on the substrate, wherein the third slope array and the fourth slope array each include a plurality of slope structures, each of the slope structures including a first slope and a second slope arranged axially symmetrically; each slope structure of the third slope array extends along the second axis direction within the plane of the substrate, and each slope structure of the fourth slope array extends along the first axis direction within the plane of the substrate; a plurality of magnetic tunnel junctions are arranged on each slope structure of the third slope array and the fourth slope array, and the pinning direction of the magnetic tunnel junctions located on the first slope is along the direction of the first slope, and the pinning direction of the magnetic tunnel junctions located on the second slope is along the direction of the second slope; the magnetic tunnel junctions with the same pinning direction are connected in series to form a magnetoresistive unit, and each magnetoresistive unit includes the same number of magnetic tunnel junctions, so that the magnetic tunnel junctions located in the third slope array and the fourth slope array are connected in series to form a plurality of magnetoresistive units.

7. The three-axis magnetic sensor according to claim 6, wherein: The third slope array is divided into a first area and a second area, and the fourth slope array is divided into a third area and a fourth area; The pinning directions of the magnetic tunnel junctions on the slope structures of the first region and the third region are both such that the magnetic tunnel junctions located on the first slope face are upward along the first slope face, and the magnetic tunnel junctions located on the second slope face are downward along the second slope face; the pinning directions of the magnetic tunnel junctions on the slope structures of the second region and the fourth region are both such that the magnetic tunnel junctions located on the first slope face are downward along the first slope face, and the magnetic tunnel junctions located on the second slope face are upward along the second slope face; The magnetic tunnel junctions on the first slope of the slope structure of the first region are connected in series to form a magnetoresistive unit R31; the magnetic tunnel junctions on the second slope of the slope structure of the first region are connected in series to form a magnetoresistive unit R32; the magnetic tunnel junctions on the first slope of the slope structure of the second region are connected in series to form a magnetoresistive unit R34; and the magnetic tunnel junctions on the second slope of the slope structure of the second region are connected in series to form a magnetoresistive unit R33. The magnetic tunnel junctions on the first slope of the slope structure of the third region are connected in series to form a magnetoresistive unit R41; the magnetic tunnel junctions on the second slope of the slope structure of the third region are connected in series to form a magnetoresistive unit R42; the magnetic tunnel junctions on the first slope of the slope structure of the fourth region are connected in series to form a magnetoresistive unit R44; and the magnetic tunnel junctions on the second slope of the slope structure of the fourth region are connected in series to form a magnetoresistive unit R43. The magnetic induction module Rx+, the magnetic induction module Ry+, the magnetic induction module Rz+, the magnetic induction module Rx-, the magnetic induction module Ry-, and the magnetic induction module Rz- are respectively formed by connecting one or more of the magnetic resistance units R31, R32, R33, R34, R41, R42, R43, and R44.

8. The three-axis magnetic sensor according to claim 6, wherein: The third slope array is divided into a first area and a second area, and the fourth slope array is divided into a third area and a fourth area; The pinning directions of the magnetic tunnel junctions on the slope structures of the first region and the third region are both upward along the slope; the pinning directions of the magnetic tunnel junctions on the slope structures of the second region and the fourth region are both downward along the slope; The magnetic tunnel junctions on the first slope of the slope structure of the first region are connected in series to form a magnetoresistive unit R35; the magnetic tunnel junctions on the second slope of the slope structure of the first region are connected in series to form a magnetoresistive unit R36; the magnetic tunnel junctions on the first slope of the slope structure of the second region are connected in series to form a magnetoresistive unit R38; and the magnetic tunnel junctions on the second slope of the slope structure of the second region are connected in series to form a magnetoresistive unit R37. The magnetic tunnel junctions on the first slope of the slope structure of the third region are connected in series to form a magnetoresistive unit R45; the magnetic tunnel junctions on the second slope of the slope structure of the third region are connected in series to form a magnetoresistive unit R46; the magnetic tunnel junctions on the first slope of the slope structure of the fourth region are connected in series to form a magnetoresistive unit R48; and the magnetic tunnel junctions on the second slope of the slope structure of the fourth region are connected in series to form a magnetoresistive unit R47. The magnetic induction module Rx+, the magnetic induction module Ry+, the magnetic induction module Rz+, the magnetic induction module Rx-, the magnetic induction module Ry- and the magnetic induction module Rz- are respectively formed by connecting one or more of the magnetic resistance units R35, R36, R37, R38, R35, R36, R37, and R38.

9. The three-axis magnetic sensor according to claim 2, wherein: The present invention also includes a fifth slope array arranged on the substrate, the fifth slope array including a plurality of slope structures, each of the slope structures including a first slope and a second slope arranged axially symmetrically; the angle between the positive projection of each slope structure of the fifth slope array in the plane of the substrate and the negative direction of the first axis is greater than 0° and less than 180°; a plurality of magnetic tunnel junctions are arranged on the slope structures of the fifth slope array and the plane of the substrate, and the pinning direction of the magnetic tunnel junction located on the first slope is along the direction of the first slope, the pinning direction of the magnetic tunnel junction located on the second slope is along the direction of the second slope, and the pinning direction of the magnetic tunnel junction located on the plane is along the direction of the second axis; the magnetic tunnel junctions with the same pinning direction are connected in series to form the magnetoresistive unit, and each magnetoresistive unit includes the same number of magnetic tunnel junctions, so that the magnetic tunnel junctions located in the fifth slope array and the magnetic tunnel junctions located in the plane are respectively connected in series to form a plurality of the magnetoresistive units.

10. The three-axis magnetic sensor according to claim 9, wherein: The fifth slope array is divided into a first region and a second region; the pinning directions of the magnetic tunnel junctions on the slope structure of the first region are all such that the magnetic tunnel junctions located on the first slope are upward along the first slope, and the magnetic tunnel junctions located on the second slope are downward along the second slope; the pinning directions of the magnetic tunnel junctions on the slope structure of the second region are all such that the magnetic tunnel junctions located on the first slope are downward along the first slope, and the magnetic tunnel junctions located on the second slope are upward along the second slope; the plane is divided into a third region and a fourth region, the pinning direction of the magnetic tunnel junctions located in the third region of the plane is along the positive direction of the second axis, and the pinning direction of the magnetic tunnel junctions located in the fourth region of the plane is along the negative direction of the second axis; The magnetic tunnel junctions on the first slope of the slope structure of the first region are connected in series to form a magnetoresistive unit R51; the magnetic tunnel junctions on the second slope of the slope structure of the first region are connected in series to form a magnetoresistive unit R52; the magnetic tunnel junctions on the first slope of the slope structure of the second region are connected in series to form a magnetoresistive unit R54; the magnetic tunnel junctions on the second slope of the slope structure of the second region are connected in series to form a magnetoresistive unit R53; the magnetic tunnel junctions in the third region are connected in series to form a magnetoresistive unit R61; and the magnetic tunnel junctions in the fourth region are connected in series to form a magnetoresistive unit R62. The magnetic induction module Rx+, the magnetic induction module Ry+, the magnetic induction module Rz+, the magnetic induction module Rx-, the magnetic induction module Ry-, and the magnetic induction module Rz- are respectively formed by connecting one or more of the magnetic resistance units R51, R52, R53, R54, R61, and R62.

11. The three-axis magnetic sensor according to claim 2, wherein: The device further includes a sixth slope array disposed on the substrate, the sixth slope array including a plurality of slope structures, each of the slope structures including a first slope and a second slope arranged axially symmetrically; an angle between an orthographic projection of each slope structure of the sixth slope array within the plane of the substrate and the negative direction of the first axis is greater than or equal to 0° and less than 90°; or an angle between an orthographic projection of each slope structure of the sixth slope array within the plane of the substrate and the negative direction of the first axis is greater than 90° and less than or equal to 180°; a plurality of magnetic tunnel junctions are respectively disposed on the slope structures of the sixth slope array and the plane of the substrate, wherein the pinning direction of the magnetic tunnel junctions located on the first slope is along the direction of the first slope, the pinning direction of the magnetic tunnel junctions located on the second slope is along the direction of the second slope, and the pinning direction of the magnetic tunnel junctions located on the plane is along the direction of the first axis; the magnetic tunnel junctions having the same pinning direction are connected in series to form a magnetoresistive unit, and each magnetoresistive unit includes the same number of magnetic tunnel junctions, so that the magnetic tunnel junctions located in the sixth slope array and the magnetic tunnel junctions located in the plane are connected in series to form a plurality of magnetoresistive units.

12. The three-axis magnetic sensor according to claim 11, wherein: The sixth slope array is divided into a first region and a second region; the pinning directions of the magnetic tunnel junctions on the slope structure of the first region are such that the magnetic tunnel junctions located on the first slope are upward along the first slope, and the magnetic tunnel junctions located on the second slope are downward along the second slope; the pinning directions of the magnetic tunnel junctions on the slope structure of the second region are such that the magnetic tunnel junctions located on the first slope are downward along the first slope, and the magnetic tunnel junctions located on the second slope are upward along the second slope; the plane is divided into a third region and a fourth region, the pinning direction of the magnetic tunnel junctions located in the third region of the plane is along the positive direction of the first axis, and the pinning direction of the magnetic tunnel junctions located in the fourth region of the plane is along the negative direction of the first axis; The magnetic tunnel junctions on the first slope of the slope structure of the first region are connected in series to form a magnetoresistive unit 55; the magnetic tunnel junctions on the second slope of the slope structure of the first region are connected in series to form a magnetoresistive unit R56; the magnetic tunnel junctions on the first slope of the slope structure of the second region are connected in series to form a magnetoresistive unit R58; the magnetic tunnel junctions on the second slope of the slope structure of the second region are connected in series to form a magnetoresistive unit R57; the magnetic tunnel junctions on the third region are connected in series to form a magnetoresistive unit R63; and the magnetic tunnel junctions on the fourth region are connected in series to form a magnetoresistive unit R64. The magnetic induction module Rx+, the magnetic induction module Ry+, the magnetic induction module Rz+, the magnetic induction module Rx-, the magnetic induction module Ry- and the magnetic induction module Rz- are respectively formed by connecting one or more of the magnetic resistance units R55, R56, R57, R58, R63 and R64.

13. The three-axis magnetic sensor according to any one of claims 3 to 12, characterized in that: The slope structure is a boss or groove structure.

14. The three-axis magnetic sensor according to claim 3, 4 or 5, characterized in that: The number of slope structures, geometric dimensions of the slope structures, the number of magnetic tunnel junctions, and geometric dimensions of the magnetic tunnel junctions in the first slope array and the second slope array are all the same.

15. The three-axis magnetic sensor according to claim 6, 7 or 8, characterized in that: The number of slope structures, geometric dimensions of the slope structures, the number of magnetic tunnel junctions, and geometric dimensions of the magnetic tunnel junctions in the third slope array and the fourth slope array are all the same.

16. The three-axis magnetic sensor according to any one of claims 2 to 12, characterized in that: The magnetoresistive units of the magnetic induction module Rx+ and the magnetic induction module Rx- are manufactured using a planar process or a slope process.

17. The three-axis magnetic sensor according to any one of claims 2 to 12, characterized in that: The magnetoresistive units of the magnetic induction module Ry+ and the magnetic induction module Ry- are manufactured using a planar process or a slope process.

18. The three-axis magnetic sensor according to any one of claims 2 to 12, characterized in that: The magnetic resistance units of the magnetic induction module Rz+ and the magnetic induction module Rz- are manufactured using a ramp process.

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