Semiconductor device

Abstract

Provided is a semiconductor device capable of improving reliability of a lead member and a joint part thereof in a structure that has the lead member integrated with a case.　A semiconductor device (1) comprises: a substrate (40) that is disposed on a base (10) and has a conductor pattern (45) on a surface opposite from the base (10); a case (20) that encloses the substrate (40); a semiconductor element (50) that is disposed on the conductor pattern (45); and a band-shaped lead member (30) that is formed integrally with the case (20) and has one end side extending from an inner wall (20a) of the case (20) so as to be joined to the conductor pattern (45). The lead member (30) has a root part (31) positioned at the root of the case (20), an opposed part (33) facing the conductor pattern (45) on a surface parallel to the substrate (40), and a band-shaped bridge part (32) for bridging between the root part (31) and the facing part (33). The bridge part (32) extends from the case (20) so that the band surface thereof becomes perpendicular to the substrate (40). The bridge part (32) has a length of 10-60 mm.

Description

Semiconductor Devices

[0001] The present invention relates to a semiconductor device.

[0002] Power semiconductor modules are known as semiconductor devices capable of controlling large currents. Power semiconductor modules are used for power conversion and include main terminals for inputting and outputting power, control terminals for controlling switching of large currents, and auxiliary terminals for monitoring voltage, etc. For example, Patent Document 1 describes a power semiconductor module in which wiring material for the main terminals is integrally fixed to a frame-shaped member that forms part of a housing.

[0003] JP 2017-017109 A

[0004] Because the main terminals carry large currents, for example, thick wiring materials are used. On the other hand, thinner lead members can be used for the control terminals and auxiliary terminals than the wiring material for the main terminals. Furthermore, by integrating the lead members of the control terminals and auxiliary terminals with the case in advance, the number of assembly parts can be reduced and the process can be simplified. However, it has been found that if the lead members exposed from the case are short, breakage or the like can occur in the lead members and their joints with the substrate, resulting in reliability issues. The present invention has been made to solve this problem, and its object is to provide a semiconductor device that improves the reliability of the lead members and their joints in a structure in which the lead members are integrated with the case.

[0005] In order to solve this problem, the semiconductor device of the present invention comprises a substrate placed on a base and having a conductor pattern on a surface opposite to the base, a case surrounding the substrate, a semiconductor element placed on the conductor pattern, and a strip-shaped lead member formed integrally with the case, one end of which extends from the inner wall of the case and is joined to the conductor pattern, the lead member having a root portion located at the base of the case, a facing portion which faces the conductor pattern in a plane parallel to the substrate, and a strip-shaped bridging portion which bridges the root portion and the facing portion, the bridging portion extending from the case so that its band surface is perpendicular to the substrate, and the length of the bridging portion is 10 mm or more and 60 mm or less.

[0006] According to the present invention, it is possible to provide a semiconductor device in which the reliability of the lead members and their joints is improved in a structure in which the lead members are integrated into the case.

[0007] FIG. 1 is a perspective view illustrating an outline of a semiconductor device according to an embodiment; FIG. 2 is a plan view of the inside of a case in the semiconductor device according to an embodiment; FIG. 3 is a perspective view illustrating an outline of a lead member extending from an inner wall of the case; FIG. 4 is a perspective view illustrating an outline of a lead member extending from an inner wall of the case; FIG. 5 is a plan view illustrating an outline of a lead member extending from an inner wall of the case; FIG. 6 is a graph illustrating the relationship between stress and the sum of the lengths of the arm portions in the width direction of the facing portion.

[0008] Embodiments of the present invention will be described with reference to the drawings. Note that the present invention is not limited to these embodiments. In addition, in the drawings, some components may be omitted, and the size, shape, and positional relationship of each component may be exaggerated. Expressions such as upper surface and lower surface are examples of relative positional relationships, and do not limit the direction when used.

[0009] [Semiconductor Device] A semiconductor device 1 according to an embodiment will be described with reference to the drawings. The semiconductor device 1 is a high-output power semiconductor module used in automobiles, railway vehicles, etc., and is, for example, an inverter device that converts DC power to AC power. As illustrated in Fig. 1, the semiconductor device 1 is housed in a housing that is composed of a base 10 that forms a lower portion, a case 20 that forms a side wall, and a lid 12 that forms an upper portion. External connection terminals 14 are provided on the top surface of the housing.

[0010] The external connection terminals 14 include a main terminal 16 with a large metal surface and an auxiliary control terminal 18 with a smaller metal surface than the main terminal 16, each connected to an internal circuit. The main terminal 16 is a terminal for inputting and outputting power and is connected to a wiring member with a large cross-sectional area so that a large current can flow. On the other hand, the auxiliary control terminal 18 is a control terminal for controlling the internal circuit or an auxiliary terminal for monitoring the internal circuit and can be a wiring member with a smaller cross-sectional area than the main terminal 16. The following describes, as an example, a lead member 30, which is the wiring member for the auxiliary control terminal 18. As illustrated in FIG. 2 , the semiconductor device 1 includes a substrate 40 disposed on a base 10 and having a conductor pattern 45 on a surface opposite the base 10, a case 20 surrounding the substrate 40, a semiconductor element 50 disposed on the conductor pattern 45, and a strip-shaped lead member 30 formed integrally with the case 20, one end of which extends from an inner wall 20 a of the case 20 and is connected to the conductor pattern 45. The lead members 30 are wiring members for the auxiliary control terminals, and the wiring members for the main terminals are not shown. Each component of the semiconductor device 1 will now be described.

[0011] (Base) The base 10 is a plate-like member that serves as the foundation of the semiconductor device 1. Here, the base 10 has a rectangular shape. The material of the base 10 can be, for example, a metal such as copper, ceramics, or a composite material thereof.

[0012] (Substrate) The substrate 40 is a component disposed on the base 10, on which the internal circuitry of the semiconductor device 1 is formed. Multiple substrates 40 can be disposed on the base 10. Here, four substrates 40 are disposed in the center in a plan view, with smaller substrates 40 disposed near each end in the longitudinal direction. Each substrate 40 has a conductor pattern 45 on the surface opposite the base 10. The conductor pattern 45 is formed in a predetermined pattern on the insulating substrate 41 so as to form part of the wiring of the internal circuitry. Note that the detailed shape of the conductor pattern 45 is omitted. In addition, the surface of each component facing the base 10 may be described as the lower surface, and the opposite surface as the upper surface.

[0013] The substrate 40 is bonded to the base 10. Here, a conductor layer of uniform thickness is formed on the surface of the insulating substrate 41 facing the base 10, and is bonded to the base 10 via a bonding member. That is, the substrate 40 is composed of the insulating substrate 41, the conductor pattern 45, and the conductor layer. The material of the insulating substrate 41 can be ceramics such as silicon nitride. The material of the conductor pattern 45 and the conductor layer can be metal such as gold, silver, or copper, and copper is used here. The bonding member can be, for example, Pb-based solder or Sn-based solder.

[0014] (Semiconductor Element) The semiconductor element 50 is a semiconductor chip on which transistors, diodes, etc. are formed. Here, the semiconductor element 50 includes an insulated gate bipolar transistor (IGBT) and a diode. The semiconductor element 50 may also include a metal oxide semiconductor field effect transistor (MOSFET). The semiconductor in the semiconductor element 50, i.e., the semiconductor that is the material of the wafer or the like on which the semiconductor element 50 is formed, may be silicon (Si) or silicon carbide (SiC). The transistor and diode may be separate chips. The semiconductor element 50 is disposed on a conductor pattern 45. The semiconductor element 50 has electrodes on its upper and lower surfaces, and the lower electrode is bonded to the conductor pattern 45 via a bonding member. The upper electrode is connected to the conductor pattern 45 by a bonding wire or the like. The bonding wire or the like is not shown.

[0015] (Case) The case 20 is a frame-shaped member that surrounds the substrate 40 and serves as a sidewall of the semiconductor device 1. The case 20 is sized to overlap the outer edge of the base 10 in a plan view, excluding the corners, and is disposed on the base 10. The lid 12 is disposed on the case 20. The case 20 can be made of a resin such as polybutylene terephthalate (PBT) or polyphenylene sulfide (PPS). The lid 12 can also be made of the same material, and the base 10, lid 12, and case 20 can be fixed together by, for example, an adhesive.

[0016] The case 20 is provided to surround the multiple substrates 40. The inside of the case 20 is filled with a sealing resin. The sealing resin is, for example, silicone gel, and seals and protects the substrates 40, the semiconductor elements 50, the lead members 30 exposed (extending) from the inner wall 20a of the case 20, and the like. Note that the sealing resin is not shown.

[0017] (Lead Member) The lead member 30 is a wiring member that electrically connects the auxiliary control terminal 18 and the conductor pattern 45 of the substrate 40. The lead member 30 is a strip-shaped member whose width is greater than its thickness, and which is a long, thin, plate-like member of uniform thickness that extends while changing direction. The lead member 30 has a thickness direction and a width direction that are perpendicular to the extension direction. Here, the thickness of the lead member 30 is 0.5 mm, and can be within an allowable range of, for example, ±0.1 mm. The lead member 30 is formed integrally with the case 20, and one end side extends from the inner wall 20a of the case 20 and is joined to the conductor pattern 45. The other end side of the lead member 30 can be the auxiliary control terminal 18. One end side of the lead member 30 is exposed from the case 20, and the portion of the lead member 30 up to the exposed end is embedded in the case 20. The lead members 30 can be formed integrally with the case 20 by insert molding, for example, in which the lead members 30 are placed in a mold for the case 20 and then pre-hardened resin material is injected to form the mold.

[0018] Here, six strip-shaped lead members 30 extend from the inner wall 20a of the case 20. These lead members 30 will be described clockwise from the upper left in FIG. 2, focusing on the positions of junctions with the conductor pattern 45, as lead members 30A, 30B, 30C, 30D, 30E, and 30F. The positions of junctions with the conductor pattern 45 of each lead member are rectangular portions at the distal end of the lead member 30 in FIG. 2. As illustrated in FIGS. 3A to 3C, the lead member 30 has three portions. Specifically, the lead member 30 has a base portion 31 located at the base of the case, a facing portion 33 facing the conductor pattern in a plane parallel to the substrate, and a strip-shaped bridging portion 32 between the base portion 31 and the facing portion 33, bridging these portions. First, common features of each lead member will be described using the lead member 30A in FIG. 3A as an example. 3A to 3C are perspective views of the portion of lead member 30 extending from the inner wall of the case, and other members are omitted from the drawings.

[0019] The root portion 31 is located at the base of the case and is the portion of the root that is exposed from the case. The lead member 30 is exposed (extends) from the case at the root portion 31 with the width direction WD perpendicular to the board. In other words, the lead member 30 extends from the case 20 (its inner wall 20a) so that the strip surface (main surface) represented by the width direction WD is perpendicular to the board. This allows the lead member 30 to improve the positional accuracy in the direction perpendicular to the board for the tip end extending from the case. Furthermore, by configuring the strip surface to be perpendicular to the board, the projected area onto the board is reduced, allowing the lead members to be densely arranged. The facing portion 33 is a portion that is bonded to the conductor pattern. The facing portion 33 has a surface parallel to the board and faces the conductor pattern at this surface parallel to the board. The facing portion 33 is bent so that the tip end of the lead member 30 is parallel to the board. Note that this bent portion is included in the facing portion 33. The facing portion 33 is bent so as to maintain the width direction WD and is continuous with the upright portion 35 .

[0020] A bridge portion 32 is located between the facing portion 33 and the base portion 31. The bridge portion 32 bridges the base portion 31 and the facing portion 33. The bridge portion 32 extends from the case so that its band surface is perpendicular to the substrate. The bridge portion 32 has a band shape and includes an upright portion 35 that is continuous with the facing portion 33 at one end of the band shape and stands perpendicular to the substrate, and an arm portion 34 that connects the other end of the upright portion 35 to the base portion 31. The upright portion 35 is a portion that extends in a direction perpendicular to the substrate. The upright portion 35 is continuous with the arm portion 34 so as to maintain the thickness direction. The upright portion 35 extends perpendicular to the substrate from one end that is continuous with the facing portion 33, and changes its extension direction toward the arm portion 34 at the other end. Note that the portion where this extension direction changes is included in the upright portion 35. The width direction WD of the upright portion 35 changes toward the arm portion 34.

[0021] The material of the lead member 30 can be a metal such as gold, silver, copper, or an alloy containing these, and copper is used here. The lead member 30 can be formed, for example, by cutting a plate-shaped member to a predetermined width and shape and then bending the cut member.

[0022] Next, lead members 30A to 30F will be described. Lead member 30D and lead member 30E have similar shapes to lead member 30A and lead member 30B, but extend in different directions from inner wall 20a of the case. Therefore, a description of lead members 30D and 30E will be omitted. As illustrated in FIG. 3A , lead members 30A and 30B extend parallel to each other from their respective base portions 31 in a direction parallel to the substrate. Lead member 30A bends at an obtuse angle at bend BA1, then changes direction at corner CA1 toward the substrate, and finally bends at a right angle at bend BA2.

[0023] Meanwhile, lead member 30B bends at an obtuse angle at bend BB1, then changes direction at corner CB1 to face the substrate. Up to this point, it is parallel to lead member 30A. It then changes direction to face the substrate at corner CB2, bends at right angles at two bends BB2 and BB3, then changes direction again at corner CB3 to face the substrate, and finally bends at right angles at bend BB4. The upright portion of lead member 30B is shorter than the upright portion of lead member 30A. An insulating member 25 is disposed between lead members 30A and 30B, extending from base 31 to a position near upright portion 35. The insulating member 25 insulates lead members 30A and 30B, allowing them to be positioned close to each other and parallel to each other. The lead members 30A and 30B arranged close to each other are, for example, wiring for a gate control terminal and an emitter auxiliary terminal, and the effect of their close arrangement is to reduce gate voltage noise during switching. The gate control terminal is connected to the gate of the IGBT, and the emitter auxiliary terminal is connected to the emitter by wiring separate from the wiring for the main terminal through which a large current flows. The same is true for the lead members 30D and 30E arranged close to each other.

[0024] As shown in FIG. 3B , lead member 30C extends a short distance from base 31, bends at a right angle at bend BC1, then changes direction at corner CC1 to diagonally downward, and then changes direction to parallel to the substrate at corner CC2. It then bends at a right angle at bend BC2, changes direction at corner CC3 to face the substrate, and finally bends at a right angle at bend BC3. As shown in FIG. 3C , lead member 30F extends parallel to the substrate from base 31, bends at an obtuse angle at bend BF1, then changes direction at corner CF1 to face the substrate, and finally bends at a right angle at bend BF2. Lead member 30F has the same order of bends and corners from base 31 to facing portion 33 as lead member 30A, giving it a shape similar to lead member 30A.

[0025] During the assembly process of the semiconductor device 1, the lead members 30 are positioned, supported, and bonded so that their facing portions 33 face a predetermined position on the conductor pattern. As described above, the lead members 30 are integrally formed with the case. This allows the lead members 30 to be positioned and supported by attaching the case to the base, reducing the number of parts required in the assembly process and simplifying the process. However, it has been found that if the lead members 30 exposed from the case are short, breakage or other damage may occur in the lead members 30. Research by the inventors has shown that such breakage or other damage may be caused by vibration of the exposed lead members 30. Causes of vibration include vibrations that occur when bonding the lead members 30 to the conductor pattern using ultrasonic bonding (hereinafter sometimes referred to as metal bonding, MB) and vibrations transmitted from the external environment. Therefore, the relationship between the stress generated by vibrations in the MB method and the length of the lead members exposed from the case was investigated.

[0026] The length of the lead member 30 exposed (extending) from the inner wall 20a of the case will be described. First, as illustrated in Fig. 3A, the length RL of the bridge portion 32 is the length from the base portion 31 to the facing portion 33, passing through the center of the lead member 30 in the width direction WD and following the shape of the bridge portion 32. Furthermore, as illustrated in Fig. 4A, the length PL of the bridge portion 32 in a plan view is the length from the base portion 31 to the center of the facing portion 33 and following the shape of the bridge portion 32 in a plan view.

[0027] The length of the arm portion 34 can be defined as the length WLa of the facing portion 33 in the width direction WD and the length WLb in the direction perpendicular to the width direction WD. These lengths WLa and WLb are the distances between the base portion 31 and the facing portion 33 in those directions. As illustrated in FIG. 4B , depending on the combination of the bending angle, direction, and number of times, there may be two or more portions of the facing portion 33 that have the same length in the width direction WD. In such cases, the lengths of those two or more portions are summed. In the case of the lead member 30C, the total length of the facing portion 33 in the width direction WD is the sum of the lengths WLa1 and WLa2.

[0028] As a result of research by the inventors, it was found that the length in the direction perpendicular to the vibration direction VD of the tool of the MB device significantly contributes to stress. In metal bonding between a lead member and a conductor pattern, a tool, which is part of the MB device, is pressed from above against the surface of the facing portion 33 parallel to the substrate. Ultrasonic vibrations are then applied in the vibration direction VD, bonding the lead member to the conductor pattern. Here, the width direction WD of the facing portion 33 is perpendicular to the vibration direction VD of the tool. Figure 5 shows an example of the relationship between stress and the sum of the lengths of the arm portions 34 in the width direction WD of the facing portion 33. Figure 5 shows simulation results for lead members 30C and 30F. The thickness of the lead member 30 is set to 0.5 mm. The graph for lead member 30F is an example of stress results when the length WLa in Figure 4A is changed. The graph for lead member 30C is an example of stress results when the sum of the lengths WLa1 and WLa2 in Figure 4B is changed. The stress is expressed as a relative value.

[0029] The graphs for lead members 30C and 30F show similar curves, with stress decreasing as the total length of the arm portions 34 in the width direction WD of the facing portion 33 increases. From this, it is believed that the trend in the graph of FIG. 5 is common to all lead members. Furthermore, based on empirical data, the range in which fracture or other damage is expected to be prevented is a range in which the relative stress value is less than 1.9, preferably less than 1.5, and more preferably less than 1.0. That is, the total length of the arm portions 34 in the width direction WD of the facing portion 33 can be 5 mm or more, preferably 7 mm or more, and more preferably 10 mm or more. In this way, by lengthening the lead members exposed (extending) from the inner wall of the case, the semiconductor device 1 can improve the reliability of the lead members.

[0030] From the viewpoint of vibration of the lead member 30, it is believed that there is no problem even if the total length of the arm portions 34 in the width direction WD of the facing portion 33 is further increased. However, if the exposed lead member 30 is longer, the accuracy of positioning the facing portion 33 in the direction along the surface of the board may decrease. For this reason, the total length of the arm portions 34 in the width direction WD of the facing portion 33 can be set to 50 mm or less, preferably 45 mm or less, and more preferably 40 mm or less. This ensures that the semiconductor device 1 has a sufficient contact area between the facing portion 33 of the lead member 30 and the conductor pattern, thereby improving the reliability of the joint.

[0031] To summarize the results of the study, the total length of the arm portion 34 in the width direction WD of the facing portion 33 can be 5 mm to 50 mm, preferably 7 mm to 45 mm, and more preferably 10 mm to 40 mm. Furthermore, the length PL of the bridge portion 32 in a plan view is increased by 2 mm from the total length of the facing portion 33 in the width direction WD, with 2 mm added to the lower limit, while the upper limit is set to the same value in consideration of the accuracy of positioning the facing portion 33. That is, the length PL of the bridge portion 32 in a plan view can be 7 mm to 50 mm, preferably 9 mm to 45 mm, and more preferably 12 mm to 40 mm. Furthermore, the length RL of the bridge portion 32 can be 10 mm to 60 mm, with the length of the upright portion 35 being 3 mm to 10 mm, preferably 12 mm to 55 mm, and more preferably 15 mm to 50 mm.

[0032] As illustrated in FIG. 3C , the arm portion 34 of the lead member 30F is bent once at the bend BF1. This allows the width direction WD of the facing portion 33 to be changed, increasing the degree of freedom in adjusting the length of the facing portion 33 in the width direction WD of the arm portion 34 and the position of the facing portion 33 relative to the substrate 40. The same applies to the lead members 30A and 30D. In this semiconductor device 1, the arm portion 34 of the lead member 30 is bent at least once in a plan view. As illustrated in FIG. 3B , the arm portion 34 of the lead member 30C is bent twice at the bends BC1 and BC2. This allows the position and width direction WD of the facing portion 33 to be further changed. Even if the position of the base portion 31 in the case cannot be selected, the position and orientation of the facing portion 33 relative to the substrate 40 can be adjusted, increasing the total length of the facing portion 33 in the width direction WD. The semiconductor device 1 includes lead members whose arms are bent twice in a plan view. 3A, when insulating member 25 is placed between two adjacent lead members 30, the result is the same as when it is embedded and fixed in case 20, and the inventors' simulation studies have also revealed that the end of insulating member 25 on the upright portion 35 side becomes equivalent to base portion 31 when insulating member 25 is not placed, and the length equivalent to the exposed portion becomes shorter. Therefore, by placing insulating member 25, it is possible to adjust the effect of placing lead members close to each other, in addition to improving vibration resistance.

[0033] The semiconductor device 1 having the above configuration has its base exposed from the case with its width direction perpendicular to the substrate, i.e., the strip surface of the bridge portion extends from the case perpendicular to the substrate, thereby improving the positioning accuracy of the facing portion in the direction perpendicular to the substrate. Furthermore, by lengthening the lead members extending from the inner wall of the case, stress due to vibration in the MB method can be reduced, improving reliability against breakage and the like. In particular, by making the total width length of the facing portion 10 mm or more, stress on the lead members can be further reduced, and by making it 40 mm or less, a decrease in the positioning accuracy of the facing portion can be suppressed, further improving reliability. In this way, the semiconductor device 1 can improve the reliability of a structure in which the lead members are integrated into the case.

[0034] The semiconductor device 1 is also used in vibration environments, such as automobiles and railway vehicles. It is believed that reducing stress by lengthening the lead members extending from the inner wall of the case is similarly effective against vibrations transmitted from the external environment. By lengthening the lead members extending from the inner wall of the case, the semiconductor device 1 can reduce stress on the lead members, including their junctions with the conductor patterns, even against vibrations transmitted from the external environment, thereby improving the reliability of the lead members and their junctions. Increasing not only the widthwise length of the facing portion but also the length perpendicular to the widthwise direction is effective against vibrations transmitted from the external environment. That is, increasing the length WLb in FIGS. 4A and 4B can also improve the reliability of the lead members and their junctions. Furthermore, increasing the length of the bridge portion 32 or the length of the bridge portion 32 in a plan view can also improve reliability against vibrations transmitted from the external environment.

[0035] The lead members and the conductor pattern may be joined using a joining material. Although joining using a joining material such as solder does not involve the application of vibrations as in the MB method, the positional accuracy of the facing portions is similar to that of the MB method. Furthermore, the reliability against vibrations transmitted from the external environment is also improved similarly to that of the MB method. Even when the lead members and the conductor pattern are joined using a joining material, the semiconductor device 1 can improve the reliability of the lead members and their joints. Furthermore, the arms of the lead members do not need to be bent. The semiconductor device may include lead members whose arms are bent three or more times. The bending angle can be freely set. Furthermore, the width direction (band surface) of the base portion of the lead member exposed from the case does not need to be perpendicular to the substrate. Even in this case, the effects of the present invention are maintained in all respects except for the positional accuracy in the direction perpendicular to the substrate.

[0036] REFERENCE SIGNS LIST 1 semiconductor device 10 base 12 lid portion 14 external connection terminal 16 main terminal 18 auxiliary control terminal 20 case 20a inner wall 25 insulating member 30 lead member 31 base portion 32 bridge portion 33 facing portion 34 arm portion 35 upright portion 40 substrate 41 insulating base material 45 conductive pattern 50 semiconductor element

Claims

1. A semiconductor device comprising: a substrate placed on a base and having a conductor pattern on a surface opposite to the base; a case surrounding the substrate; a semiconductor element placed on the conductor pattern; and a strip-shaped lead member formed integrally with the case, one end of which extends from the inner wall of the case and is joined to the conductor pattern, wherein the lead member has a root portion located at the base of the case, a facing portion which faces the conductor pattern in a plane parallel to the substrate, and a strip-shaped bridging portion which bridges the root portion and the facing portion, wherein the bridging portion extends from the case so that its strip surface is perpendicular to the substrate, and the length of the bridging portion is 10 mm or more and 60 mm or less.

2. The semiconductor device according to claim 1, wherein the bridge portion has a length in a plan view of 7 mm to 50 mm.

3. The semiconductor device according to claim 1, wherein the bridge portion has an upright portion that is continuous with the facing portion at one end and stands upright relative to the substrate, and an arm portion that connects the other end of the upright portion to the base portion, the upright portion being continuous with the arm portion so as to maintain the thickness direction, and the facing portion being bent so as to maintain the width direction and being continuous with the upright portion.

4. The semiconductor device according to claim 3, wherein the arm portion is bent at least once in a plan view.

5. The semiconductor device according to claim 3, wherein the arm portion of the lead member is bent twice in a plan view.

6. The semiconductor device according to claim 3, wherein the total width of the facing portion of the arm is 10 mm or more and 40 mm or less.

7. A semiconductor device according to any one of claims 1 to 6, wherein the facing portion is ultrasonically bonded to the conductor pattern.

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