Method for the production of an optoelectronic component, and optoelectronic component

Abstract

A method for producing an optoelectronic component comprises steps of: providing a chip carrier (100) having a top side (101) on which an optoelectronic semiconductor chip (110) is positioned; providing a protective film (200) having a top side (201) and a bottom side (202); positioning a silicone layer (120) on the top side of the chip carrier (100), such that the optoelectronic semiconductor chip (110) is embedded in the silicone layer (120); and laminating the bottom side of the protective film (200) onto the silicone layer (120).

Description

[0001] METHOD FOR MANUFACTURING AN OPTOELECTRONIC COMPONENT

[0002] AND OPTOELECTRONIC COMPONENT

[0003] DESCRIPTION

[0004] The present invention relates to a method for manufacturing an optoelectronic component and to an optoelectronic component.

[0005] The patent application claims priority from German patent application 10 2024 111 525 . 4, the disclosure content of which is hereby incorporated by reference.

[0006] Optoelectronic components with optoelectronic semiconductor chips arranged on a plastic film are known from the prior art.

[0007] One object of the present invention is to provide a method for manufacturing an optoelectronic component. A further object of the present invention is to provide an optoelectronic component. These objects are achieved by a method for manufacturing an optoelectronic component and by an optoelectronic component having the features of the independent claims. Various embodiments are specified in the dependent claims.

[0008] A method for manufacturing an optoelectronic device comprises steps for providing a chip carrier having a top surface on which an optoelectronic semiconductor chip is arranged, for providing a protective film having a top surface and a bottom surface, for arranging a silicone layer on the top surface of the chip carrier, with the optoelectronic semiconductor chip being embedded in the silicone layer, and for laminating the bottom surface of the protective film onto the silicone layer.

[0009] The optoelectronic component obtained through this process can be mechanically flexible and suitable for placement on a non-planar workpiece. The optoelectronic component can, for example, be used to shine light into the workpiece. The silicone coating and protective film of the optoelectronic component obtained through this process can serve to protect the optoelectronic semiconductor chip.

[0010] The silicone layer can be applied, for example, by a spraying process, by squeegeeing, by a dispensing process, by slot nozzle coating or by a combination of these processes.

[0011] The silicone layer can contain embedded particles. These particles can be, for example, light-scattering particles or wavelength-converting particles. The particles can be evenly distributed throughout the silicone layer. Alternatively, the particles can be confined to specific sections of the silicone layer and exhibit a laterally varying density. Different sections of the silicone layer can contain different embedded particles. It is advantageous to embed the particles in the silicone layer material before applying the silicone layer to the top surface of the chip substrate.

[0012] In one variation of the process, the chip carrier has a PET film. Advantageously, the chip carrier can be mechanically flexible in this case. Furthermore, the chip carrier can be optically transparent in this case.

[0013] In one variation of the process, the protective film consists of a PET film. Advantageously, the protective film can also be mechanically flexible in this case. Furthermore, the protective film can be optically transparent in this case.

[0014] It is advantageous for the protective film to have a thickness between 5 pm and 200 pm, preferably between 20 pm and 100 pm. In one variant of the process, the protective film is laminated onto the uncured silicone layer. In this case, the process includes a further step for curing the silicone layer, particularly after laminating the protective film onto the silicone layer. Depending on the material of the silicone layer, curing can be achieved, for example, thermally or by irradiation with UV radiation. Advantageously, laminating the protective film onto the uncured silicone layer can create a robust and durable bond between the silicone layer and the underside of the protective film.

[0015] In one variation of the process, the protective film is provided with a bonding layer already attached to its upper surface. This bonding layer can, for example, be used to create a connection with a workpiece. Providing the protective film with the bonding layer already attached to its upper surface eliminates the need to subsequently apply the bonding layer to the surface of the protective film after it has been laminated to the silicone layer.

[0016] In one variation of the process, this includes a further step to bond the top surface of the protective film to a workpiece. The bonding layer can advantageously ensure a robust and durable connection.

[0017] In particular, the bonding layer can be a layer of materials selected individually or in combination from polymers, copolymers, polymethyl (meth)acrylate (PMMA), polyester, polyurethane (PU), polyvinyl chloride (PVC), natural resins, preferably rosin, phenolic resins, isocyanate (NCO)-crosslinked binders, melamine-formaldehyde condensation resins (MF), melamine-phenol-formaldehyde resins (MPF), melamine-polyester, melamine-urea-formaldehyde resins (UMF), poly(organo)siloxanes, radiation-curing binders.

[0018] Binders, in this context, are substances that allow solids, especially those with a fine degree of dispersion, to be bonded together or to a substrate. Binders can be added to the solids to be bound in liquid form.

[0019] It is advantageous if the compound layer has a thickness between 0.1 gm and 50 gm, in particular between 0.25 gm and 25 gm or between 0.5 gm and 7 gm.

[0020] Furthermore, it is advantageous if the bonding layer comprises several sublayers. For example, it is possible for the bonding layer to comprise two sublayers.

[0021] It is advantageous for the bonding layer to be made of a material that, after application of the protective film to the target surface, exhibits high transparency to light emitted by the optoelectronic semiconductor chips. Prior to the bonding between the top surface of the protective film and the target surface, the bonding layer may optionally have a cloudy optical appearance. The bonding layer may be made of a hot-melt adhesive, a cold-curing adhesive, or a radiation-curable adhesive, in particular an adhesive curable by electromagnetic radiation and / or electron beam radiation.

[0022] In one variation of the process, the workpiece is a molded plastic part. The bond between the top surface of the protective film and the workpiece can be formed simultaneously with the production of the molded plastic part, for example, by molding the plastic part onto the top surface of the protective film. Alternatively, the top surface of the protective film can be bonded to the workpiece only after the workpiece has been produced. The workpiece can also have multiple layers, particularly on the side facing the protective film and / or on the side facing away from the protective film. Such layers can be printed or otherwise applied and can have and / or provide decorative and / or functional properties.

[0023] The workpiece may have been manufactured before the bond between the protective film and the workpiece was established. In this case, the bond may have been created, for example, by a hot process or a cold process. In a hot process, the properties of the bonding layer are modified during the bonding process by the application of heat. In a cold process, no heat is applied. Instead, the properties of the bonding layer can be modified in other ways during the bonding process, for example, by irradiation with light of a specific wavelength, such as UV radiation.

[0024] In another variant, the workpiece can be manufactured simultaneously with the creation of the bond between the top surface of the protective film and the workpiece. In this case, the workpiece may, for example, have been manufactured using a molding process (molding or casting), whereby the workpiece was directly molded onto the bonding layer on the top surface of the protective film.

[0025] In another variant of the process, the protective film is provided with a functional layer arranged on its upper surface. This functional layer can, for example, comprise one or more layers, selected individually or in combination from a hard coating layer, an anti-fingerprint layer, an anti-reflective layer, a transport protection layer, a passe-partout layer, a layer with holographic structures, or a layer containing micromirrors, microprisms, and / or microlenses. Advantageously, in this case, the protective film not only provides protection for the optoelectronic semiconductor chip of the optoelectronic component but also offers additional functionality.

[0026] It is advantageous if the functional layer has a thickness between 0.1 pm and 50 pm, preferably between 0.25 pm and 25 pm, and more preferably between 0.5 pm and 10 pm.

[0027] In one variation of the process, the silicone layer is laterally structured to expose a section of the top surface of the chip carrier. This can, for example, enable the creation of an electrically conductive connection to a contact structure located on the top surface of the chip carrier.

[0028] The top surface of the chip carrier can have structures or a 3D topology that improves the adhesion of the silicon layer to the top surface of the chip carrier 10. However, metallizations and optoelectronic semiconductor chips arranged on the top surface of the chip carrier can also provide a sufficient topology.

[0029] In one variant of the process, the protective film is provided with a structure formed on its underside. Such a structure on the underside of the protective film can advantageously improve adhesion of the protective film to the silicone layer. The structure can also form coupling-in or coupling-out structures that facilitate the passage of light from the silicone layer into the protective film. For this purpose, the structure can be laterally variable.

[0030] In one variant of the process, providing the protective film includes embossing the structure into the underside of the protective film and / or embossing the structure into a layer arranged on the protective film, in particular a lacquer layer. Advantageously, an embossing process enables simple and cost-effective formation of the structure on the underside of the protective film. A lacquer layer suitable for embossing the structure can be a thermoplastic lacquer and / or, in particular after embossing, cross-linked, especially chemically and / or thermally and / or by high-energy radiation, for example, UV radiation. The lacquer layer suitable for embossing the structure can be applied, in particular, by printing.

[0031] The structuring on the underside of the protective film can include, for example, frustoconical, frustopyran-shaped or cylindrical structures, or a roughening of the surface of the underside of the protective film.

[0032] In one variation of the process, providing the protective film involves creating openings in the underside of the protective film. Such openings can advantageously also contribute to a particularly reliable adhesion of the underside of the protective film to the silicone layer.

[0033] In one variation of the process, the outward-facing, unaffected underside of the protective film is pretreated before lamination, for example, by a treatment selected individually or in combination from: UV radiation, ozone, UV-ozone, corona, plasma. Advantageously, such pretreatment of the underside of the protective film can also contribute to a particularly reliable adhesion of the protective film to the silicone layer.

[0034] UV ozone refers to a surface pretreatment with UV radiation in an air or oxygen atmosphere, which enables the formation of ozone.

[0035] In one variant of the process, the protective film is provided with a layer package arranged on the underside of the protective film. Such a layer package can advantageously also contribute to a particularly reliable bond between the underside of the protective film and the silicone layer.

[0036] In one variant of the method, the protective film is provided with a functional layer arranged between the underside of the protective film and the layer package. Such a functional layer can advantageously provide additional functionality to the protective film. The functional layer can, for example, be a colored, reflective, absorbing, or light-scattering layer. The functional layer can be arranged across the entire surface or only in sections between the underside of the protective film and the layer package. The functional layer can, for example, comprise a varnish or an absorber material. The functional layer can, for example, serve to reduce or prevent optical crosstalk between individual optoelectronic semiconductor chips of the optoelectronic device.

[0037] In one variant of the method, the protective film is provided with an embedded electronic component. The embedded electronic component can advantageously provide additional functionality for the protective film, such as touch functionality or other sensor functionality.

[0038] In one variant of the process, the chip carrier is provided with an additional interconnect layer arranged on its underside. This interconnect layer makes it possible to connect the underside of the chip carrier of the optoelectronic component produced by the process to another workpiece or surface.

[0039] In one variation of the process, the chip carrier is provided on a carrier film, which forms the first roll. The protective film is provided as a second roll. Lamination is carried out using a roll-to-roll process. Advantageously, this makes the process particularly cost-effective on a large scale.

[0040] As an alternative to providing the protective film as a roll, it can also be supplied as a label or sheet. This allows the protective film to be applied to the silicone layer, for example, using a pick-and-place or dispensing process.

[0041] An optoelectronic component comprises a chip carrier with a top surface on which an optoelectronic semiconductor chip is mounted. The optoelectronic semiconductor chip is embedded in a silicone layer located on the top surface of the chip carrier. A protective film is laminated to the silicone layer.

[0042] This optoelectronic component can advantageously be mechanically flexible, making it suitable for mounting on a non-planar workpiece. The optoelectronic component can, for example, be designed to shine light into the workpiece. The silicone layer and the protective film of the optoelectronic component protect it from damage caused by external influences.

[0043] The properties, features, and advantages of this invention described above, as well as the manner in which they are achieved, will become clearer and more readily understandable in connection with the following description of the exemplary embodiment, which will be explained in more detail in conjunction with the drawings. These drawings show, in each case, a schematic representation.

[0044] Figure 1 shows a chip carrier with optoelectronic semiconductor chips arranged on one top surface; Figure 2 shows the chip carrier with a silicon layer arranged on the top surface;

[0045] Figure 3 shows a protective film with a bonding layer arranged on one top side;

[0046] Figure 4 shows an optoelectronic component obtained by laminating the protective film onto the silicone layer;

[0047] Figure 5 a role-to-role procedure;

[0048] Figure 6 shows a variant of the optoelectronic component in which the top side of the protective film has been connected to a workpiece;

[0049] Figure 7 shows another variant of the optoelectronic component with a structure and openings on the underside of the protective film;

[0050] Figure 8 shows a variant of the protective film with a layer package arranged on the underside;

[0051] Figure 9 shows a variant of the protective film with a functional layer arranged between the underside of the protective film and the layer package;

[0052] Figure 10 shows a variant of the protective film with an embedded electronic component;

[0053] Figure 11 shows another variant of the optoelectronic component with particles embedded in the silicon layer;

[0054] Figure 12 shows another variant of the optoelectronic component with a functional layer arranged on the top side of the protective film; and Figure 13 shows a variant of the chip carrier with a further interconnect layer arranged on its underside.

[0055] Figure 1 shows a schematic cutaway side view of a chip carrier 100. The chip carrier 100 has a substantially flat and planar shape with a top surface 101 and a bottom surface 102 opposite the top surface 101. The chip carrier 100 can, for example, comprise a film, such as a film made of a plastic material. In particular, the chip carrier 100 can, for example, comprise a PET film made of polyethylene terephthalate.

[0056] Electrically conductive traces and contact surfaces can be arranged on the top surface 101 of the chip carrier 100. Electrically conductive structures can also be arranged on the bottom surface 102 of the chip carrier 100 and extend through the chip carrier 100 between the top surface 101 and the bottom surface 102.

[0057] A plurality of optoelectronic semiconductor chips 110 are arranged on the upper surface 101 of the chip carrier 100. The optoelectronic semiconductor chips 110 can be, for example, light-emitting optoelectronic semiconductor chips, in particular, for example, light-emitting diode chips (LED chips). If the optoelectronic semiconductor chips 110 are light-emitting semiconductor chips, they are configured to emit light in a direction away from the upper surface 101 of the chip carrier 100, or into the hemisphere arranged above the upper surface 101 of the chip carrier 100.

[0058] In the example shown in Figure 1, several optoelectronic semiconductor chips 110 are arranged on the top surface 101 of the chip carrier 100. The optoelectronic semiconductor chips 110 can all be identical. However, it is also possible for different optoelectronic semiconductor chips 110 to be present, for example, for generating light with different wavelengths. In various configurations, the optoelectronic semiconductor chips 110 can be addressed collectively, in groups, or individually. The number of optoelectronic semiconductor chips 110 can be chosen arbitrarily. It is also possible to provide only a single optoelectronic semiconductor chip 110.

[0059] Figure 2 shows a schematic cutaway side view of the chip carrier 100 with the optoelectronic semiconductor chips 110 arranged on the top surface 101 in a processing stage subsequent to that shown in Figure 1. A silicone layer 120 has been arranged on the top surface 101 of the chip carrier 100. The optoelectronic semiconductor chips 110 are embedded in the silicone layer 120. The silicone layer 120 has a thickness in a direction perpendicular to the top surface 101 of the chip carrier 100 that is greater than the height of the optoelectronic semiconductor chips 110.

[0060] The application of the silicone layer 120 can be carried out, for example, by a spraying process, by squeegeeing, by a dosing process (dispensing) or by slot nozzle coating.

[0061] Figure 3 shows a schematic cutaway side view of a section of a protective film 200. The protective film 200 has a flat and substantially planar shape with a top surface 201 and a bottom surface 202 opposite the top surface 201. The protective film 200 can, for example, be a plastic film, in particular, for example, a PET film made of polyethylene terephthalate.

[0062] It is advantageous if the protective film 200 has a layer thickness between 5 pm and 200 pm, preferably between 20 pm and 100 pm.

[0063] It is advantageous if the protective film 200 exhibits transparency to light emitted by the optoelectronic semiconductor chips 110 and displays high aging stability against the effects of irradiation with such light. This is the case with a protective film 200 comprising a PET film.

[0064] A bonding layer 250 is arranged on the upper surface 201 of the protective film 200. The bonding layer 250 is designed to create an adhesive bond between the upper surface 201 of the protective film 200 and another surface. For this purpose, the bonding layer 250 can, for example, have the properties described for the adhesion-promoting layer in publication WO 2017 / 093066 Al on pages 9ff.

[0065] In particular, the compound layer 250 can be a layer of polymers and / or copolymers, especially comprising polymethyl methacrylate (PMMA), polyester, polyurethane (PU), or polyvinyl chloride (PVC). The compound layer 250 can also comprise natural resins, preferably rosin, phenolic resins, isocyanate (NCO)-crosslinked binders, for example melamine-formaldehyde condensation resins (MF), melamine-phenol formalaldehyde resins (MPF), melamine-polyester, melamine-urea formalaldehyde resins (UMF), poly(organo)siloxanes, or radiation-curing binders.

[0066] Binders, in this context, are substances that enable solids, particularly those with a fine degree of dispersal, to be bonded together or to a substrate. Binders can be added to the solids to be bound in liquid form.

[0067] It is advantageous if the compound layer 250 has a layer thickness between 0.1 pm and 50 pm, in particular between 0.25 pm and 25 pm or between 0.5 pm and 7 pm.

[0068] Furthermore, it is advantageous if the compound layer 250 comprises several sublayers. For example, it is possible for the compound layer 250 to comprise two sublayers.

[0069] It is advantageous if the bonding layer 250 consists of a material that, after application of the protective film 200 to the target surface, exhibits high transparency to light emitted by the optoelectronic semiconductor chips 110. Prior to the bonding between the top surface 201 of the protective film 200 and the target surface, the bonding layer 250 may optionally have a cloudy optical appearance. The bonding layer 250 may be formed from a hot-melt adhesive, a cold-curing adhesive, or a radiation-curable adhesive, in particular an adhesive curable by electromagnetic radiation and / or electron beam radiation.

[0070] Figure 4 shows a schematic cutaway side view of the chip carrier 100 with the silicone layer 120 arranged on the top surface 101 of the chip carrier 100 and the protective film 200 with the bonding layer 250 arranged on the top surface 201 of the protective film 200 in a processing stage subsequent to that shown in Figures 2 and 3. The protective film 200 has been laminated onto the silicone layer 120 such that the underside 202 of the protective film 200 faces the silicone layer 120.

[0071] The protective film 250 was applied to the not yet fully cured silicone layer 120 by wet lamination. The silicone layer 120 was in a liquid or only partially cured or semi-cured state. A partially cured or semi-cured state can also be described as a bi-stage state. The semi-curing process increases the viscosity of the silicone layer 120.

[0072] After laminating the protective film 200 onto the silicone layer 120, the silicone layer 120 has cured or dried. Depending on the type of silicone layer material, curing can occur either thermally or by irradiation with UV radiation. This creates a strong bond between the silicone layer 120 and the underside 202 of the protective film 200.

[0073] In the processing state shown in Figure 4, the arrangement forms a first variant of an optoelectronic component 10 .

[0074] Figure 5 shows a highly schematic representation of a roll-to-roll process 300, with which several of the above-described process steps can be carried out efficiently and cost-effectively.

[0075] A plurality of chip carriers 100 are provided on a carrier film 315, which forms a first roll 310. The chip carriers 100 are arranged on the carrier film 315 such that the underside 102 of each chip carrier 100 faces the carrier film 315 and the top side 101 of each chip carrier 100 is freely accessible.

[0076] The chip carriers 100 can optionally be provided already with the optoelectronic semiconductor chips 110 arranged on the top surface 101 on the carrier film 315. Alternatively, it is possible to arrange the optoelectronic semiconductor chips 110 on the top surfaces 101 of the chip carriers 100 already arranged on the carrier film 315, for example by means of a pick-and-place method.

[0077] In a subsequent step, the silicone layer 120 is arranged on the top surface 101 of each chip carrier 100, which can be done, for example, by one of the methods mentioned above.

[0078] Subsequently, the protective film 200 is laminated onto each chip carrier 100. For this purpose, the protective film 200 is provided as a second roll 320. The protective film 200 may already have the bonding layer 250 on its upper surface 201. By simultaneously unwinding the first roll 310 and the second roll 320, the protective film 200 is sequentially laminated onto the silicone layer 220 of each chip carrier 100.

[0079] Subsequently, the silicone layer of each chip carrier undergoes a curing process (120).

[0080] Figure 6 shows a schematic cutaway side view of another variant of the optoelectronic component 10, which was created by further processing of the variant of the optoelectronic component 10 shown in Figure 4. In this process, the top surface 201 of the protective film 200 was connected to a workpiece 400 by means of the bonding layer 250.

[0081] The workpiece 400 can, for example, be a molded plastic part. In particular, the workpiece 400 can, for example, be made of a transparent or partially transparent plastic material.

[0082] The workpiece 400 may have already been manufactured before the connection between the protective film 200 and the workpiece 400 was established. In this case, the connection may have been made, for example, by a hot process or a cold process. In a hot process, the properties of the bonding layer 250 are altered during the bonding process by the application of heat.

[0083] In a cold process, no heat is supplied. Instead, the properties of the compound layer 250 can be modified in other ways during the compounding process, for example by irradiation with light of a specific wavelength, such as UV radiation.

[0084] In another variant, the workpiece 400 can be produced simultaneously with the creation of the connection between the top surface 201 of the protective film 200 and the workpiece 400. In this case, the workpiece 400 may, for example, have been produced by a forming process (mold process or casting process), whereby the workpiece 400 was directly formed onto the bonding layer 250 on the top surface 201 of the protective film 200.

[0085] Figure 7 shows another variant of the optoelectronic component 10. The variant shown in Figure 7 differs from the variant shown in Figure 6 in that the protective film 200 has a structure 210 on its underside 202. Furthermore, in this variant of the optoelectronic component 10, the protective film 200 has openings 220 on its underside 202.

[0086] The structuring 210 and the openings 220 can improve adhesion between the silicone layer 120 and the underside 202 of the protective film 200. The structuring 210 can also form coupling-in or coupling-out structures that facilitate the transmission of light from the silicone layer 120 into the protective film 200. For this purpose, the structuring 210 can be laterally variable.

[0087] The structuring 210 on the underside 202 of the protective film 200 can, for example, include frustoconical, truncated pyramidal or cylindrical structures or a roughening of the surface of the underside 202 of the protective film 200.

[0088] The provision of the protective film 200, schematically depicted in Figure 3, can for this purpose include forming the structure 210. The structure 210 can, for example, be formed by embossing it on the underside 202 of the protective film 200.

[0089] The openings 220 extend from the underside 202 of the protective film 200 towards the top side 201 of the protective film 200 into the protective film 200. It is possible that the openings 220 completely penetrate the protective film 200 between the underside 202 and the top side 201. The openings 220 may have been introduced into the protective film 200, for example, during its preparation, such as by a die-cutting process.

[0090] In a simplified version of the optoelectronic component 10, the openings 220 can be omitted, leaving only the structure 210. In another version, the structure 210 can be omitted, leaving only the openings 220.

[0091] Alternatively or additionally to providing the structuring 210 and the openings 220 on the underside 202 of the protective film 200, the underside 202 of the protective film 200 can be pretreated before laminating it onto the silicone layer 120. For example, the underside 202 of the protective film 200 can be pretreated by irradiation, either individually or in combination, using UV radiation, ozone, UV-ozone, plasma, or corona. Such pretreatment of the underside 202 of the protective film 200 can also improve the adhesion of the protective film 200 to the silicone layer 120.

[0092] In all described variants of the optoelectronic component 10, the top surface 101 of the chip carrier 100 can also have structures or a 3D topology that results in improved adhesion of the silicon layer 120 to the top surface 101 of the chip carrier 100. However, metallizations arranged on the top surface 101 of the chip carrier 100 and the optoelectronic semiconductor chips 110 arranged on the top surface 101 of the chip carrier 100 can also already provide a sufficient topology.

[0093] Figure 8 shows a schematic cutaway side view of another variant of the protective film 200, which can be used to manufacture further variants of the optoelectronic component 10. This variant of the protective film 200 differs from the variant shown in Figure 3 in that it is provided with a layer package 260 arranged on the underside 202 of the protective film 200. The layer package 260 can comprise one or more layers that provide improved adhesion to the silicone layer 120.

[0094] Figure 9 shows a schematic cutaway side view of another variant of the protective film 200, which can be used to manufacture further variants of the optoelectronic component 10. The variant shown in Figure 9 differs from the variant of the protective film 200 shown in Figure 8 in that the protective film 200 is additionally provided with a functional layer 270 arranged between the underside 202 of the protective film 200 and the layer package 260. The functional layer 270 can, for example, be a colored, reflective, absorbing, or light-scattering layer. The functional layer 270 can be arranged over the entire surface or only in sections between the underside 202 of the protective film 200 and the layer package 260. The functional layer 270 can, for example, comprise a varnish or an absorber material.The functional layer 270 can, for example, serve to reduce or prevent optical crosstalk between individual optoelectronic semiconductor chips 110 of the optoelectronic component 10.

[0095] Figure 10 shows a schematic cutaway side view of another variant of the protective film 200, which can be used to manufacture further variants of the optoelectronic component 10. The variant of the protective film 200 shown in Figure 10 differs from the variant shown in Figure 3 in that the protective film 200 has at least one embedded electronic component 230. For this purpose, the protective film 200 in this variant can, for example, have a multilayer structure with a plurality of individual layers. Capacitive and / or electrically conductive structures can, for example, be formed between the individual layers. The electronic component 230 embedded in the protective film 200 in this way can, for example, form a sensor structure, such as a touch-sensitive sensor.

[0096] Figure 11 shows a schematic cutaway side view of another variant of the optoelectronic component 10. The variant of the optoelectronic component 10 shown in Figure 11 corresponds to the variant of the optoelectronic component 10 shown in Figure 7, except for the differences described below. In addition, this variant has particles 125 embedded in the silicone layer 120. The particles 125 can be, for example, light-scattering particles or wavelength-converting particles.

[0097] The particles 125 can be uniformly distributed throughout the silicone layer 120. Alternatively, the particles 125 can be confined to specific sections of the silicone layer 120 and exhibit a laterally varying density. Different sections of the silicone layer 120 can contain different embedded particles 125. For example, different wavelength-converting particles 125 can be arranged on different optoelectronic semiconductor chips 110.

[0098] It is advantageous if the particles 125 are embedded in the material of the silicone layer 120 before the silicone layer 120 is applied to the top surface 101 of the chip carrier 100.

[0099] In further variants of the optoelectronic component 10, the silicone layer 120 can be laterally structured after being applied to the top surface 101 of the chip carrier 100 in order to expose one or more sections of the top surface 101 of the chip carrier 100. This can, for example, make it possible to establish electrically conductive connections in the finished optoelectronic component 10 to contact surfaces arranged in the exposed section of the top surface 101 of the chip carrier 100. In these variants, the protective film 200 can optionally also have suitable recesses or openings over the exposed sections of the top surface 101 of the chip carrier 100.

[0100] Figure 12 shows a schematic cutaway side view of another variant of the optoelectronic component 10. The variant shown in Figure 12 corresponds to the variant of the optoelectronic component 10 shown in Figure 4, except for the differences described below. However, for the production of the variant of the optoelectronic component 10 shown in Figure 12, the protective film 200 was provided with a functional layer 280 replacing the interconnect layer 250. The functional layer 280 is arranged on the top surface 201 of the protective film 200.

[0101] The functional layer 280 can, for example, have one or more layers, selected individually or in combination from a hard coating layer, an anti-fingerprint layer, an anti-reflective layer, a transport protection layer, a passe-partout layer, a layer having holographic structures, a layer having micromirrors, microprisms and / or microlenses.

[0102] It is advantageous if the functional layer 280 has a layer thickness between 0.1 pm and 50 pm, preferably between 0.25 pm and 25 pm, and more preferably between 0.5 pm and 10 pm.

[0103] Figure 13 shows a schematic cutaway side view of another variant of the chip carrier 100, which can be used to manufacture further variants of the optoelectronic component 10. The variant of the chip carrier 100 shown in Figure 13 differs from the variant shown in Figure 1 in that this variant of the chip carrier 100 is provided with an additional interconnect layer 290 arranged on the underside 102 of the chip carrier 100. The additional interconnect layer 290 can be configured like the interconnect layer 250 described above. The additional interconnect layer 290 can serve to connect the optoelectronic component 10 manufactured from this variant of the chip carrier 100 to a surface of another workpiece.

[0104] The invention has been illustrated and described in more detail with reference to preferred embodiments. However, the invention is not limited to the obvious examples.

[0105] Other variations can be derived by the expert.

[0106] REFERENCE SYMBOL LIST optoelectronic component chip carrier top bottom optoelectronic semiconductor chip silicone layer particle protective film top bottom structuring opening embedded electronic component interconnect layer layer package functional layer functional layer further interconnect layer roll-to-roll process first roll carrier film second roll workpiece

Claims

PATENT CLAIMS 1. Method for manufacturing an optoelectronic device (10) comprising the following steps: - Providing a chip carrier (100) with a top surface (101) , wherein on the top surface (101) of the chip carrier (100) an optoelectronic semiconductor chip (110) is arranged; - Providing a protective film (200) with a top (201) and a bottom (202) ; - Arranging a silicone layer (120) on the top (101) of the chip carrier (100) , wherein the optoelectronic semiconductor chip (110) is embedded in the silicon layer (120); - Laminating the underside (202) of the protective film (200) onto the silicone layer (120) .

2. The method of claim 1, wherein the chip carrier (100) comprises a PET film.

3. Method according to one of the preceding claims, wherein the protective film (200) comprises a PET film.

4. A method according to any of the preceding claims, wherein the protective film (200) is laminated onto the uncured silicone layer (120), the method comprising the following further step: - Curing of the silicone layer (120) .

5. Method according to one of the preceding claims, wherein the protective film (200) has a surface on the top (201) the protective film (200) is provided by the connecting layer (250).

6. The method of claim 5, wherein the method includes the following further step includes: - Connecting the top side (201) of the protective film (200) to a workpiece (400) .

7. Method according to claim 6, wherein the workpiece (400) is a plastic molded part.

8. Method according to any one of claims 1 to 4, wherein the protective film (200) is provided with a surface on the top (201) is provided to the functional layer (280) arranged in the protective film (200).

9. Method according to claim 8, wherein the functional layer (280) comprises one or more layers, individually or in combination selected from a hard coating layer, an anti-fingerprint layer, an anti-reflective layer, a transport protection layer, a passe-partout layer, a layer having holographic structures or a layer having micromirrors, microprisms and / or microlenses.

10. Method according to any of the preceding claims, wherein the silicone layer (120) is laterally structured to expose a section of the top surface (101) of the chip carrier (100).

11. Method according to one of the preceding claims, wherein the protective film (200) is provided with a surface on the underside (202) the protective film (200) formed structure (210) is provided.

12. Method according to claim 11, wherein providing the protective film (200) comprises embossing the structuring (210) into the underside (202) of the protective film (200) and / or embossing the structuring into a layer arranged on the protective film (200), in particular a lacquer layer.

13. Method according to one of the preceding claims, wherein providing the protective film (200) comprises introducing openings (220) into the underside (202) of the protective film (200).

14. Method according to any one of claims 1 to 10, wherein the underside (202) of the protective film (200) is pretreated before lamination, in particular by means of a treatment selected individually or in combination from UV radiation, ozone, UV-ozone, corona, plasma.

15. Method according to any one of claims 1 to 10, wherein the protective film (200) is provided with a layer package (260) arranged on the underside (202) of the protective film (200).

16. Method according to claim 15, wherein the protective film (200) is provided with a functional layer (270) arranged between the underside (202) of the protective film (200) and the layer package (260).

17. Method according to one of the preceding claims, wherein the protective film (200) is provided with an embedded electronic component (230).

18. Method according to one of the preceding claims, wherein the chip carrier (100) is provided with a further interconnection layer (290) arranged on a bottom side (102) of the chip carrier (100).

19. Method according to one of the preceding claims, wherein the chip carrier (100) is provided on a carrier film (315) forming a first roll (310), wherein the protective film (200) is provided as a second roll (320), wherein the lamination is carried out in a roll-to-roll process (300).

20. Optoelectronic component (10) with a chip carrier (100) having a top surface (101) on which an optoelectronic semiconductor chip (110) is arranged, wherein the optoelectronic semiconductor chip (110) is embedded in a silicone layer (120) arranged on the top surface (101) of the chip carrier (100), wherein a bottom surface (202) of a protective film (200) is laminated onto the silicone layer (120).

21. Optoelectronic component (10) according to claim 20, wherein a connecting layer (250) arranged on a top side (201) of the protective film (200) is connected to a workpiece (400).

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