Coating device and coating method

Abstract

A coating device and a coating method. The coating device comprises a vacuum chamber, a cathode apparatus, and an anode apparatus; a target of the cathode apparatus is rotatably mounted within the vacuum chamber; the target is insulated from the vacuum chamber; an anode body of the anode apparatus is located inside the vacuum chamber and is located on one side of the target; the anode body is arranged adjacent to a first-side track formed on the target; the anode body is insulated from the vacuum chamber; the anode body comprises a first anode and a second anode which are sequentially arranged in the axial direction of the target; the first anode and the second anode both extend in the axial direction of the target; the potential of the first anode is higher than that of the second anode; and the first anode is located on the side of the tail end of the first-side track in a drift current direction, and the second anode is located on the side of the head end of the first-side track in the drift current direction.

Description

Coating equipment and coating methods

[0001] This application claims priority to Chinese Patent Application No. 202410555528.9, filed on May 7, 2024, the entire contents of which are incorporated herein by reference. Technical Field

[0002] This application relates to the field of vacuum sputtering coating technology, for example to a coating equipment and coating method. Background Technology

[0003] Vacuum magnetron sputtering is a common coating method. Vacuum magnetron sputtering refers to a coating technology in which the coating material is used as the target cathode, and argon ions are used to bombard the target cathode (i.e., the target material) to generate cathode sputtering, so that the target atoms on the target material are sputtered and deposited onto the workpiece to be coated to form a deposition layer.

[0004] When a large area of ​​the part to be coated needs to be coated, the length of the target material extending along its axial direction increases accordingly, generally reaching more than 2 meters. As a result, the uniformity of the film thickness along the axial direction of the target material deteriorates, and the etching rate at the two ends of the target material is much higher than that at other parts of the target material, greatly reducing the utilization rate of the target material. Summary of the Invention

[0005] This application provides a coating apparatus and a coating method to optimize the film thickness distribution of the workpiece to be coated along the axial direction of the target material, reduce the difference in etching rate between the two ends of the target material and other locations, and improve the utilization rate of the target material.

[0006] This application provides a coating apparatus, comprising:

[0007] Vacuum chamber;

[0008] A cathode device, comprising a target material rotatably disposed within a vacuum chamber, the target material being insulated from the vacuum chamber, and a linear region of a plasma raceway formed on the surface of the target material being divided into a first side raceway and a second side raceway arranged opposite to each other; and

[0009] An anode device, comprising an anode body located within the vacuum chamber and on one side of the target material, the anode body being arranged adjacent to the first side track, the anode body being insulated from the vacuum chamber, the anode body comprising a first anode and a second anode sequentially arranged along the axial direction of the target material, the first anode and the second anode both extending along the axial direction of the target material;

[0010] The first anode is located on one side of the end of the drift current direction on the first side runway, and the second anode is located on one side of the beginning of the drift current direction on the first side runway, with the potential of the first anode being higher than that of the second anode.

[0011] As an optional embodiment, the length of the target material extending along its axial direction is h0, the length of the first anode extending along the axial direction of the target material is h1, and the length of the second anode extending along the axial direction of the target material is h2, wherein h1 > h0 / 2 and h2 < h0 / 2.

[0012] As an optional feature, the potential difference between the first anode and the second anode is greater than 10V and less than 30V.

[0013] Alternatively, the first anode includes a plurality of first anode segments arranged sequentially along the axial direction of the target material, wherein the plurality of first anode segments are insulated from each other, and the plurality of first anode segments have the same potential; and / or

[0014] The second anode includes a plurality of second anode segments arranged sequentially along the axial direction of the target material. The plurality of second anode segments are insulated from each other and have the same potential.

[0015] As an optional solution, the horizontal distance between the anode body and the target material is b, where 30mm < b < 200mm.

[0016] As an optional solution, the vertical distance d in the vertical direction between the side of the anode body near the workpiece to be coated and the surface of the target material facing the workpiece to be coated is less than 80 mm.

[0017] Alternatively, the cathode device includes two targets arranged at intervals, the two targets sharing a single anode body located between the two targets.

[0018] As an optional solution, the cathode device includes two targets arranged at intervals, with an anode body corresponding to one side of each target.

[0019] As an option, the potential of the first anode can be a positive potential, a negative potential, a ground potential, or a floating potential;

[0020] The potential of the second anode is positive, negative, ground potential, or floating potential.

[0021] This application also provides a coating method applied to the coating equipment described above, the coating method comprising:

[0022] The anode body is disposed on one side of the target material, and the anode body is arranged adjacent to the first side runway.

[0023] A voltage is applied to the first anode and the second anode, ensuring that the potential of the first anode is higher than that of the second anode. The first anode is located on one side of the end of the drift current direction on the first side runway, and the second anode is located on one side of the beginning of the drift current direction on the first side runway. Attached Figure Description

[0024] Figure 1 is a top view of a coating apparatus provided in Embodiment 1 of this application;

[0025] Figure 2 is a top view of another coating apparatus provided in Embodiment 1 of this application;

[0026] Figure 3 is a top view of another coating apparatus provided in Embodiment 1 of this application;

[0027] Figure 4 is a fitting diagram of the film thickness distribution of the part to be coated after coating in one embodiment;

[0028] Figure 5 is a fitting diagram of the film thickness distribution of the part to be coated after coating according to Embodiment 1 of this application;

[0029] Figure 6 is a partial structural front view of the coating equipment provided in Embodiment 1 of this application;

[0030] Figure 7 is a top view of the coating equipment provided in Embodiment 2 of this application;

[0031] Figure 8 is a top view of the coating equipment provided in Embodiment 3 of this application;

[0032] Figure 9 is a top view of the coating equipment provided in Embodiment 4 of this application;

[0033] Figure 10 is a flowchart of the coating method provided in Embodiment 4 of this application.

[0034] In the figure: 1. Vacuum chamber; 21. Target material; 211. Plasma racetrack; 2111. First side racetrack; 2112. Second side racetrack; 212. Target material support side; 213. Target material end side; 31. Anode body; 311. First anode; 3111. First anode section; 312. Second anode; 3121. Second anode section; 32. Anode power supply; 321. First bias power supply; 322. Second bias power supply. Detailed Implementation

[0035] The technical solution of this application will be described below with reference to the accompanying drawings and embodiments.

[0036] In the description of this application, unless otherwise specified and limited, the terms "connected," "linked," and "fixed" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral part; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; they can refer to the internal communication of two elements or the interaction between two elements. The meaning of the above terms in this application can be understood according to the specific circumstances.

[0037] In this application, unless otherwise specified and limited, "above" or "below" the second feature can include direct contact between the first and second features, or contact between the first and second features through another feature between them. Furthermore, "above," "over," and "on top" of the second feature includes the first feature directly above or diagonally above the second feature, or simply indicates that the first feature is at a higher horizontal level than the second feature. "Below," "below," and "under" the second feature includes the first feature directly below or diagonally below the second feature, or simply indicates that the first feature is at a lower horizontal level than the second feature.

[0038] In the description of this embodiment, the terms "upper," "lower," "left," and "right," etc., refer to the orientation or positional relationship shown in the accompanying drawings. They are used only for ease of description and simplification of operation, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on this application. In addition, the terms "first" and "second" are used only for distinction in description and have no special meaning.

[0039] Example 1

[0040] As shown in Figures 1-3, this embodiment provides a coating apparatus, which includes a vacuum chamber 1 and a cathode device. The vacuum chamber 1 is grounded and serves as the anode. The cathode device includes a target 21, which is rotatably disposed within the vacuum chamber 1 and is insulated from the vacuum chamber 1. When the target 21 is bombarded with argon ions, cathode sputtering occurs within the vacuum chamber 1, thereby sputtering and depositing target atoms from the target 21 onto the workpiece to be coated, forming a deposition layer on the workpiece. Because the target 21 is rotatably disposed within the vacuum chamber 1, multiple locations on the circumferential direction of the target 21 can be etched.

[0041] As shown in Figures 1 to 3, during the coating process of the workpiece to be coated, when the target 21 rotates in the vacuum chamber 1, a plasma raceway 211 is formed on the surface of the target 21 under the combined action of the internal magnetic field and electric field of the target 21. The plasma raceway 211 extends along the axial direction of the target 21, that is, it extends between the target end side 213 and the target support side 212 of the target 21. The linear region of the plasma raceway 211 formed on the surface of the target 21 can be divided into a first side raceway 2111 and a second side raceway 2112 arranged opposite to each other. The plasma density on the plasma raceway 211 gradually decreases along the direction of the drift current on the plasma raceway 211 (that is, the direction indicated by the arrows in Figures 1 to 3). The higher the plasma density on the target 21, the faster the target 21 is etched at that position. Correspondingly, the film thickness of the workpiece to be coated is relatively thicker at the position where the target 21 is etched faster.

[0042] In one embodiment, the etching amount of the rotating target 21 is the sum of the etching amounts of the first side track 2111 and the second side track 2112. Correspondingly, the film thickness of the part to be coated is also the sum of the etching amounts of the first side track 2111 and the second side track 2112. When the part to be coated needs to be coated over a large area, the length of the target 21 extending along its axial direction increases accordingly, generally reaching more than 2m. Consequently, the uniformity of the film thickness of the part to be coated along the axial direction of the target 21 deteriorates, and the etching rate at the two ends of the target 21 (i.e., the target end side 213 and the target support side 212) is much greater than the etching rate at the axial middle part of the target 21, greatly reducing the utilization rate of the target 21. In addition, in one embodiment, an anode is provided on at least one side of the rotating target 21, and the plasma intensity on the runway is controlled by the anode. However, it mainly affects the plasma runway 211 near the side where the anode is provided, which may increase the difference in etching rate between the two ends of the target 21 and other locations. For example, it may make the difference between the etching rate at one end of the target 21 and the etching rate at the middle of the target 21 greater, that is, the ends of the target 21 are more easily etched through.

[0043] To solve the above problems, as shown in Figures 1 to 3, the coating equipment provided in this embodiment also includes an anode device. The anode device includes an anode body 31, which is located in the vacuum chamber 1 and on one side of the target material 21. The anode body 31 is arranged adjacent to the first side track 2111 and is insulated from the vacuum chamber 1. The anode body 31 includes a first anode 311 and a second anode 312 arranged sequentially along the axial direction of the target material 21. Both the first anode 311 and the second anode 312 extend along the axial direction of the target material 21. The first anode 311 is located on one side of the end of the drift current direction on the first side track 2111, and the second anode 312 is located on one side of the beginning of the drift current direction on the first side track 2111. The potential of the first anode 311 is higher than that of the second anode 312.

[0044] The coating equipment provided in this embodiment provides an anode body 31 that is insulated from the vacuum chamber 1, and the anode body 31 is arranged adjacent to the first side track 2111 formed on the target material 21, so that the plasma density on the first side track 2111 is enhanced as a whole. At this time, the plasma density distribution on the first side track 2111 determines the etching rate of at least one position in the axial direction of the entire target material 21. In this embodiment, the anode body 31 includes a first anode 311 and a second anode 312 arranged sequentially along the axial direction of the target material 21. Both the first anode 311 and the second anode 312 extend along the axial direction of the target material 21. The potential of the first anode 311 is higher than that of the second anode 312. The first anode 311 is located on one side of the end of the drift current direction on the first side track 2111, and the second anode 312 is located on one side of the beginning of the drift current direction on the first side track 2111. Since there is a high and low potential difference between the first anode 311 and the second anode 312, the trend of increasing high plasma density at the first side track 2111 corresponding to the low-potential second anode 312 is much lower than the trend of increasing low plasma density at the first side track 2111 corresponding to the high-potential first anode 311. As a result, the density difference of plasma along the drift current direction on the plasma track 211 becomes smaller. In summary, the above-mentioned coating equipment effectively reduces the difference in etching rate between the two ends of the target 21 (i.e., the target end side 213 and the target support side 212) and other locations, so that the target 21 is fully etched, thereby improving the utilization rate of the target 21 and optimizing the film thickness distribution of the part to be coated along the axial direction of the target 21.

[0045] Optionally, in this embodiment, as shown in Figures 1 and 2, the direction of the drift current on the first side track 2111 can be from the target support side 212 to the target end side 213. Optionally, in this embodiment, as shown in Figure 3, the direction of the drift current on the first side track 2111 can also be from the target end side 213 to the target support side 212, as long as the track adjacent to the anode body 31 is the first side track 2111.

[0046] To illustrate by example, when the direction of the drift current on the first side track 2111 is from the target support side 212 to the target end side 213, as shown in FIG4, multiple anode bodies 31 are provided on one side of the target 21. However, if at least one anode body 31 with the same potential at one location is arranged adjacent to the first side track 2111, then on the first side track 2111, from the target support side 212 to the target end side 213, the density distribution of plasma on the first side track 2111 determines the etching rate at multiple locations in the axial direction of the entire target 21 (i.e., determines the trend of the total amount change in FIG4), so that from the target support side 212 to the target end side 213, the film thickness of the part to be coated gradually becomes thinner, and in this direction, the etching rate of the target 21 gradually weakens. Under the above circumstances, the side of the target 21 closest to the support side is more easily etched through.

[0047] Referring to FIG5, if, based on the above exemplary description, the potential of the first anode 311 in the anode body 31 is higher than the potential of the second anode 312, and the first anode 311 is located on one side of the end of the drift current direction on the first side track 2111, and the second anode 312 is located on one side of the beginning of the drift current direction on the first side track 2111, since there is a high and low potential difference between the first anode 311 and the second anode 312, the trend of increasing high plasma density at the first side track 2111 corresponding to the low-potential second anode 312 is much lower than the trend of increasing low plasma density at the first side track 2111 corresponding to the high-potential first anode 311, thereby making the plasma density difference along the drift current direction on the first side track 2111 smaller, then the etching rate on the target 21 is determined by the plasma density on the first side track 2111.

[0048] Ideally, the etching rate of the entire target 21 is nearly uniform, resulting in a uniform film thickness deposited on the workpiece. This configuration effectively reduces the difference in etching rates between the two ends of the target 21 (i.e., the target end side 213 and the target support side 212) and other locations, ensuring that the entire target 21 is fully etched. This improves the utilization rate of the target 21 and optimizes the film thickness distribution along the axial direction of the target 21 on the workpiece.

[0049] Optionally, in this embodiment, the potential of the first anode 311 can be a positive potential, a negative potential, a ground potential, or a floating potential. In addition, the potential of the second anode 312 can be a positive potential, a negative potential, a ground potential, or a floating potential, as long as the potential of the first anode 311 is higher than the potential of the second anode 312.

[0050] Optionally, in this embodiment, as shown in Figures 2 and 3, the anode device further includes an anode power supply 32. The anode power supply 32 includes a first bias power supply 321 and a second bias power supply 322. The first bias power supply 321 is electrically connected to the first anode 311, thereby providing a potential to the first anode 311. The second bias power supply 322 is electrically connected to the second anode 312, thereby providing a potential to the second anode 312. When the potential of the first anode 311 is ground potential or floating potential, the first bias power supply 321 is not required. Similarly, when the potential of the second anode 312 is ground potential or floating potential, the second bias power supply 322 is not required.

[0051] In this embodiment, as shown in FIG1, the length of the target 21 extending along its axial direction is h0, the length of the first anode 311 extending along the axial direction of the target 21 is h1, and the length of the second anode 312 extending along the axial direction of the target 21 is h0. 2。 Since the plasma density at the beginning of the first side track 2111 is greater than that at the end, if the length h2 of the second anode 312 is too long, the second anode 312 cannot accurately control the plasma density on the first side track 2111 corresponding to the second anode 312. Furthermore, under this condition, if the length h1 of the first anode 311 is too short, the first anode 311 has a poor ability to control the plasma density at the end of the first side track 2111. Therefore, optionally, h1 > h0 / 2 and h2 < h0 / 2, so that the high-potential first anode 311 can more easily control the plasma density at the end of the first side track 2111 along the drift current direction, making the plasma density on the first side track 2111 approximately the same, thereby making the etching rate at multiple locations on the target 21 the same.

[0052] Optionally, in this embodiment, the potential difference between the first anode 311 and the second anode 312 is greater than 10V and less than 30V. Optionally, the potential difference between the first anode 311 and the second anode 312 can be 11V, 13V, 15V, 17V, 19V, 20V, 22V, 24V, 25V, 27V, or 29V. The above-mentioned value limitation of the potential difference further ensures that the low-potential second anode 312 pulls down the high plasma density at the beginning of the first side runway 2111 along the drift current direction.

[0053] Optionally, in this embodiment, as shown in FIG1, the horizontal distance between the anode body 31 and the target 21 is b, then 30mm < b < 200mm. Optionally, the horizontal distance b between the anode body 31 and the target 21 can be any value between 30mm and 200mm. The above-mentioned limitation ensures that the anode body 31 has a corresponding influence on the distribution of plasma density on the first side runway 2111.

[0054] In this embodiment, the vertical distance d between the side of the anode body 31 near the workpiece to be coated and the surface of the target material 21 facing the workpiece to be coated is less than 80 mm.

[0055] In this embodiment, as shown in FIG6, the side of the anode body 31 near the workpiece to be coated is higher or lower than the surface of the target 21 facing the workpiece to be coated, and the vertical distance d between the anode body 31 and the surface of the target 21 facing the workpiece to be coated is less than 80 mm. When the distance exceeds the above-mentioned distance, the anode body 31 has a weaker ability to control the plasma density on the runway near the anode body 31. The above-mentioned limitation further ensures that the anode body 31 has a corresponding influence on the distribution of plasma density on the first runway 2111. The surface of the target 21 facing the workpiece to be coated is the sputtering surface, and the plasma runway 211 is formed on the surface of the target 21 facing the workpiece to be coated.

[0056] In this embodiment, a water-cooling device can also be provided on the anode body 31 to cool the anode body 31 and ensure the normal operation of the entire coating equipment. Furthermore, an electrode feeding device, a magnet array, and a process gas feeding device can also be integrated on the anode body 31 to ensure the normal operation of the coating equipment. Since the structure and setting principle of the water-cooling device, electrode feeding device, magnet array, and process gas feeding device are related technologies, they will not be described in detail here. In addition, the outer surface of the anode body 31 can be sandblasted to prevent the deposited layer on the anode body 31 from falling off.

[0057] Example 2

[0058] The coating equipment provided in this embodiment is basically the same as that in Embodiment 1. The difference between the coating equipment provided in this embodiment and that in Embodiment 1 is as follows:

[0059] The first anode 311 is composed of a plurality of first anode segments 3111, and / or the second anode 312 is composed of a plurality of second anode segments 3121. For example, the first anode 311 is composed of one first anode segment 3111, while the second anode 312 is composed of a plurality of second anode segments 3121; or, the first anode 311 is composed of a plurality of first anode segments 3111, and the second anode 312 is composed of one second anode segment 3121; or, the first anode 311 is composed of a plurality of first anode segments 3111, and the second anode 312 is composed of a plurality of second anode segments 3121.

[0060] The first anode 311 includes a plurality of first anode segments 3111 arranged sequentially along the axial direction of the target material 21, the plurality of first anode segments 3111 being insulated from each other, and the plurality of first anode segments 3111 having the same potential; and / or, the second anode 312 includes a plurality of second anode segments 3121 arranged sequentially along the axial direction of the target material 21, the plurality of second anode segments 3121 being insulated from each other, and the plurality of second anode segments 3121 having the same potential.

[0061] As shown in Figure 7, in this embodiment, the first anode 311 includes multiple first anode segments 3111 arranged sequentially along the axial direction of the target material 21. These multiple first anode segments 3111 are insulated from each other and have the same potential. Similarly, the second anode 312 includes multiple second anode segments 3121 arranged sequentially along the axial direction of the target material 21. These multiple second anode segments 3121 are insulated from each other and have the same potential. By designing both the first anode 311 and the second anode 312 as multi-segment structures, it is easier to flexibly adjust the lengths of the first anode 311 and the second anode 312, thereby adapting to different working conditions.

[0062] Two adjacent first anode segments 3111 can be connected in series to make multiple first anode segments 3111 have the same potential. Similarly, two adjacent second anode segments 3121 can also be connected in series to make multiple second anode segments 3121 have the same potential.

[0063] Example 3

[0064] The coating equipment provided in this embodiment is basically the same as that in Embodiment 1. The difference between the coating equipment provided in this embodiment and that in Embodiment 1 is as follows:

[0065] As shown in Figure 8, the cathode device provided in this embodiment includes two spaced-apart targets 21, with an anode body 31 corresponding to one side of each target 21. Since each target 21 is adjusted through its corresponding anode body 31, the magnetic poles of the magnetic rods of the two targets 21 can be completely identical, making the management of the magnetic rods and the fault tolerance more favorable. Furthermore, the film thickness of the two targets 21 can be complementary, resulting in a more uniform film thickness distribution on the part to be coated.

[0066] Example 4

[0067] The coating equipment provided in this embodiment is basically the same as that in Embodiment 1. The difference between the coating equipment provided in this embodiment and that in Embodiment 1 is as follows:

[0068] As shown in Figure 9, the cathode device provided in this embodiment includes two spaced-apart targets 21, which share a single anode body 31 located between the two targets 21. Since the magnetic poles of the magnetic rods on the two targets 21 are different, the magnetic rods of the two targets 21 need to be arranged synchronously to one NSN and the other SNS, so that the anode body 31 is located between the two first side tracks 2111, meaning the drift current directions of the first side tracks 2111 of the two targets 21 are the same. Therefore, adjustment of the two targets 21 can be achieved through a single anode body 31, reducing cost and device complexity.

[0069] Example 5

[0070] As shown in Figure 10, this embodiment also provides a coating method, which is applied to the above-mentioned coating equipment. The coating method includes:

[0071] S110. The anode body 31 is placed on one side of the target material 21, and the anode body 31 is arranged adjacent to the first side runway 2111.

[0072] S120. Apply voltage to the first anode 311 and the second anode 312, and ensure that the potential of the first anode 311 is higher than that of the second anode 312. The first anode 311 is located on one side of the end of the drift current direction on the first side runway 2111, and the second anode 312 is located on one side of the beginning of the drift current direction on the first side runway 2111.

[0073] The coating method provided in this embodiment is applied to the above-mentioned coating equipment, thereby effectively reducing the difference in etching rate between the two ends of the target 21 and other locations, improving the utilization rate of the target 21, and optimizing the film thickness distribution of the part to be coated along the axial direction of the target 21.

[0074] The above embodiments of this application are merely illustrative examples and are not intended to limit the implementation of this application. Those skilled in the art can make other variations or modifications based on the above description. It is neither necessary nor possible to exhaustively describe all possible implementations here.

Claims

1. A coating apparatus, comprising: Vacuum chamber (1); The cathode device includes a target (21) which is rotatably disposed in the vacuum chamber (1). The target (21) is insulated from the vacuum chamber (1). The linear region of the plasma raceway (211) formed on the surface of the target (21) is divided into a first side raceway (2111) and a second side raceway (2112) arranged opposite to each other. as well as An anode device, comprising an anode body (31), the anode body (31) being located within the vacuum chamber (1) and on one side of the target material (21), the anode body (31) being arranged adjacent to the first side track (2111), the anode body (31) being insulated from the vacuum chamber (1), the anode body (31) comprising a first anode (311) and a second anode (312) sequentially arranged along the axial direction of the target material (21), the first anode (311) and the second anode (312) both extending along the axial direction of the target material (21); The first anode (311) is located on one side of the end of the drift current direction on the first side runway (2111), and the second anode (312) is located on one side of the beginning of the drift current direction on the first side runway (2111), and the potential of the first anode (311) is higher than the potential of the second anode (312).

2. The coating equipment according to claim 1, wherein, The length of the target material (21) extending along the axial direction of the target material (21) is h0, the length of the first anode (311) extending along the axial direction of the target material (21) is h1, and the length of the second anode (312) extending along the axial direction of the target material (21) is h2, wherein h1 > h0 / 2 and h2 < h0 / 2.

3. The coating equipment according to claim 1, wherein, The potential difference between the first anode (311) and the second anode (312) is greater than 10V and less than 30V.

4. The coating equipment according to any one of claims 1 to 3, wherein, The coating equipment includes at least one of the following: The first anode (311) includes a plurality of first anode segments (3111) arranged sequentially along the axial direction of the target material (21), the plurality of first anode segments (3111) being insulated from each other, and the plurality of first anode segments (3111) having the same potential; or The second anode (312) includes a plurality of second anode segments (3121) arranged sequentially along the axial direction of the target material (21), the plurality of second anode segments (3121) being insulated from each other, and the plurality of second anode segments (3121) having the same potential.

5. The coating equipment according to any one of claims 1 to 3, wherein, The horizontal distance between the anode body (31) and the target material (21) is b, where 30mm < b < 200mm.

6. The coating equipment according to claim 5, wherein, The vertical distance d in the vertical direction between the side of the anode body (31) near the workpiece to be coated and the surface of the target material (21) facing the workpiece to be coated is less than 80 mm.

7. The coating equipment according to any one of claims 1 to 3, wherein, The cathode device includes two targets (21) arranged at intervals, the two targets (21) sharing a common anode body (31), the anode body (31) being located between the two targets (21).

8. The coating equipment according to any one of claims 1 to 3, wherein, The cathode device includes two spaced-apart targets (21), and each target (21) has an anode body (31) on one side.

9. The coating equipment according to any one of claims 1 to 3, wherein, The potential of the first anode (311) is a positive potential, a negative potential, a ground potential, or a floating potential; The potential of the second anode (312) is positive, negative, ground, or floating.

10. A coating method, applied to the coating apparatus according to any one of claims 1 to 9, the coating method comprising: The anode body (31) is disposed on one side of the target material (21), and the anode body (31) is arranged adjacent to the first side runway (2111); A voltage is applied to the first anode (311) and the second anode (312), ensuring that the potential of the first anode (311) is higher than that of the second anode (312). The first anode (311) is located on one side of the end of the drift current direction on the first side runway (2111), and the second anode (312) is located on one side of the beginning of the drift current direction on the first side runway (2111).

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