Mask and method for producing organic device

Abstract

A mask according to the present invention may include a first layer which has at least one first opening, and a metal layer which has a plurality of second openings that overlap with the first opening in a plan view. The metal layer may include an effective region in which the plurality of second openings are formed, and a peripheral region which surrounds the effective region. A recessed part or a third opening may be formed in the peripheral region.

Description

Mask and organic device manufacturing method

[0001] SUMMARY OF THE INVENTION Embodiments of the present disclosure relate to methods for manufacturing masks and organic devices.

[0002] Vapor deposition is known as a method for forming precise patterns. In vapor deposition, a mask with openings formed therein is first combined with a substrate. Then, a vapor deposition material is applied to the substrate through the openings in the mask. As a result, a vapor deposition layer containing the vapor deposition material is formed on the substrate in a pattern corresponding to the pattern of the openings in the mask. Vapor deposition is used, for example, as a method for forming pixels of organic electroluminescence (EL) display devices. For example, Patent Document 1 discloses a mask used in vapor deposition.

[0003] JP 2009-062565 A

[0004] The deposition mask is incorporated into a deposition apparatus. The deposition mask incorporated into the deposition apparatus is used to perform deposition processes multiple times. More specifically, the deposition mask is used to form a deposition layer on a first substrate, and then to form a deposition layer on a second substrate, and then to form a deposition layer on a third substrate. In this way, the deposition mask is used to sequentially form deposition layers on multiple substrates while remaining incorporated into the deposition apparatus.

[0005] The deposition material contained in a deposition source such as a crucible is heated to evaporate and float within the deposition device. The evaporated deposition material passes through the deposition mask and adheres to the substrate, forming a deposition layer. Therefore, the deposition mask is heated by a heat source that heats the vapor and the deposition material.

[0006] When multiple deposition processes are performed consecutively using one deposition mask, the temperature of the deposition mask gradually increases. Therefore, the temperature of the deposition mask varies during the multiple deposition processes. On the other hand, to ensure uniform product quality, it is desirable to uniform the conditions for the multiple deposition processes.

[0007] A mask according to an embodiment of the present disclosure may include: a first layer including a first surface, a second surface opposite the first surface, and at least one first opening penetrating from the first surface to the second surface; a metal layer including a third surface opposite the second surface, a fourth surface opposite the third surface, and a plurality of second openings penetrating from the third surface to the fourth surface and overlapping the first opening in a plan view. The first layer may include silicon or a silicon compound. The metal layer may include an effective region in which the plurality of second openings are formed, and a peripheral region surrounding the effective region. The peripheral region may include a recess recessed from the fourth surface toward the third surface or a third opening penetrating the metal layer.

[0008] According to the embodiment of the present disclosure, it is possible to suppress a temperature rise of the deposition mask during a deposition process.

[0009] 6A. A cross-sectional view showing an example of an organic device. A diagram showing an example of a vapor deposition apparatus provided with a mask. A plan view showing an example of a mask as viewed from the incident surface side. A plan view showing an example of a mask as viewed from the exit surface side. A diagram showing an enlarged view of a portion surrounded by a two-dot chain line in FIG. 3. A diagram showing the portion shown in FIG. 5A as viewed from the exit surface side. A diagram showing a cross section along line VI-VI of the mask shown in FIG. 3. A diagram showing an enlarged view of a portion surrounded by a two-dot chain line in FIG. 6A. A cross-sectional view showing a step of a method for manufacturing the mask shown in FIG. 6A. A cross-sectional view showing a step of a method for manufacturing the mask shown in FIG. 6A. A cross-sectional view showing a step of a method for manufacturing the mask shown in FIG. 6A. A cross-sectional view showing a step of a method for manufacturing the mask shown in FIG. 6A. A cross-sectional view showing a step of a method for manufacturing the mask shown in FIG. 6A. A cross-sectional view showing a step of a method for manufacturing the mask shown in FIG. 6A. A cross-sectional view showing a step of a method for manufacturing the mask shown in FIG. 6A. 21A is an enlarged view of a portion surrounded by a two-dot chain line in FIG. 21A . A cross-sectional view showing a step of a method for manufacturing the mask shown in FIG. 6A . A plan view corresponding to FIG. 6A , showing a modified example of the mask. FIG. 19A is an enlarged view of a portion surrounded by a two-dot chain line in FIG. 19A . A cross-sectional view showing a step of a method for manufacturing the mask shown in FIG. 19A . A cross-sectional view showing a step of a modified example of the ...25A . A cross-sectional view showing a step of a modified example of the method for manufacturing the mask shown in FIG. 19A . A cross-sectional view showing a step of a modified example of the method for manufacturing the mask shown in FIG. 6A . A cross-sectional view showing a step of a modified example of the method for manufacturing the mask shown in FIG. 6A .Fig. 6B is a cross-sectional view showing a step of a modified example of the method for manufacturing the mask shown in Fig. 6A. Fig. 6C is a cross-sectional view showing a step of a modified example of the method for manufacturing the mask shown in Fig. 6A. Fig. 6D is a diagram showing an example of an apparatus including an organic device.

[0010] In this specification and drawings, unless otherwise specified, terms that refer to the materials that form the basis of a certain configuration, such as "substrate," "sheet," and "film," are not to be distinguished from one another solely on the basis of differences in name.

[0011] In this specification and drawings, unless otherwise specified, terms that specify shapes, geometric conditions, and their degrees, such as "parallel" and "orthogonal," and values ​​of lengths and angles, are not bound by strict meanings, but are interpreted to include a range within which similar functions can be expected.

[0012] In this specification and drawings, unless otherwise specified, when a certain component, such as a certain region, is referred to as "above" or "below," "upper" or "lower," or "upward" or "below" another component, such as another region, this includes cases where the component is in direct contact with the other component. It also includes cases where another component is contained between the component and the other component, i.e., cases where the components are in indirect contact. Furthermore, unless otherwise specified, the terms "above," "upper side," or "upper," or "under," "lower side," or "lower" may be used in the up-down direction.

[0013] In this specification, when multiple upper limit value candidates and multiple lower limit value candidates are listed for a certain parameter, the numerical range of the parameter may be constructed by combining any one upper limit value candidate with any one lower limit value candidate. For example, consider a description that reads, "Parameter B is, for example, A1 or more, or may be A2 or more, or may be A3 or more. Parameter B is, for example, A4 or less, or may be A5 or less, or may be A6 or less." In this case, the numerical range of parameter B may be A1 or more and A4 or less, A1 or more and A5 or less, A1 or more and A6 or less, A2 or more and A4 or less, A2 or more and A5 or less, A2 or more and A6 or less, A3 or more and A4 or less, A3 or more and A5 or less, or A3 or more and A6 or less.

[0014] In this specification and drawings, unless otherwise specified, the state in which the surface of element A is "opposed to" the surface of element B includes not only the case in which the surface of element A is in contact with the surface of element B, but also the case in which element C is located between the surfaces of element A and element B. In other words, the term "opposed to" is a term that indicates the orientation of two surfaces.

[0015] In this specification and drawings, unless otherwise specified, the same or similar symbols are used to designate the same parts or parts having similar functions, and repeated explanations may be omitted. Furthermore, for the sake of convenience, the dimensional ratios of the drawings may differ from the actual ratios, and some components may be omitted from the drawings.

[0016] In this specification and drawings, unless otherwise specified, one embodiment of this specification may be combined with other examples to the extent that no contradiction occurs. In addition, other examples may also be combined with each other to the extent that no contradiction occurs.

[0017] Unless otherwise specified, in the present specification and drawings, when two or more steps or processes are disclosed in a method such as a manufacturing method, other steps or processes that are not disclosed may be performed between the disclosed steps or processes. In addition, the order of the disclosed steps or processes is arbitrary within the range that does not cause a contradiction.

[0018] In one embodiment of the present specification, an example will be described in which a mask is used to form an organic layer or an electrode on a substrate when manufacturing an organic electroluminescence (EL) display device. However, the use of the mask is not particularly limited, and this embodiment can be applied to masks used for various purposes. For example, the mask of this embodiment may be used to form electrodes of a device for displaying or projecting images or videos to express virtual reality (VR) or augmented reality (AR). The mask of this embodiment may also be used to form electrodes of a display device other than an organic electroluminescence (EL) display device, such as an electrode of a liquid crystal display device. The mask of this embodiment may also be used to form electrodes of an organic device other than a display device, such as an electrode of a pressure sensor.

[0019] A first aspect of the present disclosure is a mask comprising: a first layer including a first surface, a second surface located opposite the first surface, and at least one first opening penetrating from the first surface to the second surface; and a metal layer including a third surface facing the second surface, a fourth surface located opposite the third surface, and a plurality of second openings penetrating from the third surface to the fourth surface and overlapping the first opening in a planar view; wherein the first layer comprises silicon or a silicon compound; and the metal layer includes an effective region in which the plurality of second openings are formed, and a peripheral region surrounding the effective region; and the peripheral region has formed therein a recess recessed from the fourth surface toward the third surface or a third opening penetrating the metal layer.

[0020] A second aspect of the present disclosure is the mask according to the first aspect, wherein at least a portion of the recess or the third opening may be formed at a position overlapping the first layer.

[0021] A third aspect of the present disclosure is a mask according to the first or second aspect described above, wherein the first layer may include a plurality of the first openings, and at least a portion of the recess or the third opening may be formed in a position overlapping with an area between adjacent first openings in the first layer.

[0022] A fourth aspect of the present disclosure is a mask according to any one of the first to third aspects described above, wherein at least a portion of the recess or the third opening may be formed in a position overlapping with a region between an outer edge of the first layer and the first opening.

[0023] A fifth aspect of the present disclosure is a mask according to any one of the first to fourth aspects described above, wherein the peripheral region may have a recess formed therein that is recessed from the fourth surface toward the third surface, and at least a portion of the recess may be formed in a position that overlaps with the first opening.

[0024] In a sixth aspect of the present disclosure, the mask according to any one of the first to fifth aspects described above may include an intermediate layer located between the second surface and the third surface and including a fourth opening overlapping the first opening, and the recess or the third opening may be formed at a position overlapping the intermediate layer.

[0025] In a seventh aspect of the present disclosure, a mask according to any one of the first to sixth aspects described above may include an intermediate layer located between the second surface and the third surface and including a fourth opening overlapping the first opening, and a third opening penetrating the metal layer may be formed in the peripheral region, and at least a portion of the third opening may be formed at a position overlapping the first opening and overlapping the intermediate layer.

[0026] An eighth aspect of the present disclosure is a mask according to any one of the first to seventh aspects described above, wherein silicon oxide or silicon nitride may be disposed in the recess or the third opening.

[0027] A ninth aspect of the present disclosure is a method for manufacturing an organic device, comprising a step of forming an organic layer on a substrate by a vapor deposition method using a mask according to any one of the first to eighth aspects described above.

[0028] An embodiment of the present disclosure will be described in detail with reference to the drawings. Note that the embodiment described below is an example of an embodiment of the present disclosure, and the present disclosure should not be interpreted as being limited to only these embodiments.

[0029] An organic device 100 including an organic layer formed by using a mask will be described. The organic device 100 includes an organic layer or an electrode formed by using a mask. Figure 1 is a cross-sectional view showing an example of the organic device 100.

[0030] The organic device 100 includes a substrate 110 and a plurality of elements 115 arranged along an in-plane direction of the substrate 110. The substrate 110 includes a first surface 111 and a second surface 112 located on the opposite side of the first surface 111. The elements 115 are located on the first surface 111. The elements 115 are, for example, pixels. The substrate 110 may include two or more types of elements 115. For example, the substrate 110 may include a first element 115A and a second element 115B. Although not shown, the substrate 110 may also include a third element. The first element 115A, the second element 115B, and the third element are, for example, a red pixel, a blue pixel, and a green pixel.

[0031] The element 115 may include a first electrode 120 , an organic layer 130 located on the first electrode 120 , and a second electrode 140 located on the organic layer 130 .

[0032] The organic device 100 may include an insulating layer 160 located between two adjacent first electrodes 120 in a planar view. The insulating layer 160 includes, for example, polyimide. The insulating layer 160 may overlap an edge of the first electrode 120. "Planar view" means viewing an object along the normal direction to the surface of a plate-like member such as the substrate 110.

[0033] The substrate 110 may be an insulating member. Examples of materials that can be used for the substrate 110 include rigid materials such as silicon, quartz glass, Pyrex (registered trademark) glass, and synthetic quartz plates, as well as flexible materials such as resin films, optical resin plates, and thin glass. The substrate 110 may have a planar shape similar to that of silicon wafers used in semiconductor manufacturing. In this case, the substrate 110 can be processed using equipment used in semiconductor manufacturing processes. For example, the first electrode 120, the insulating layer 160, and the like can be formed on the substrate 110 using equipment used in semiconductor manufacturing processes.

[0034] The element 115 is configured to realize some function by applying a voltage between the first electrode 120 and the second electrode 140 or by causing a current to flow between the first electrode 120 and the second electrode 140. For example, if the element 115 is a pixel of an organic EL display device, the element 115 can emit light that forms an image.

[0035] The first electrode 120 includes a conductive material. For example, the first electrode 120 includes a metal, a conductive metal oxide, or another conductive inorganic material. The first electrode 120 may include a transparent and conductive metal oxide such as indium tin oxide.

[0036] The organic layer 130 includes an organic material. When the organic layer 130 is energized, the organic layer 130 can perform some function. "Electrification" means that a voltage is applied to the organic layer 130 or that a current flows through the organic layer 130. The organic layer 130 may be a light-emitting layer that emits light when energized, or a layer whose light transmittance or refractive index changes when energized. The organic layer 130 may include an organic semiconductor material.

[0037] 1 , the organic layer 130 may include a first organic layer 130A and a second organic layer 130B. The first organic layer 130A is included in the first element 115A. The second organic layer 130B is included in the second element 115B. Although not shown, the organic layer 130 may include a third organic layer included in a third element. The first organic layer 130A, the second organic layer 130B, and the third organic layer are, for example, a red light-emitting layer, a blue light-emitting layer, and a green light-emitting layer.

[0038] When a voltage is applied between the first electrode 120 and the second electrode 140, the organic layer 130 located therebetween is driven. If the organic layer 130 is an emitting layer, light is emitted from the organic layer 130 and extracted to the outside from the second electrode 140 side or the first electrode 120 side.

[0039] The organic layer 130 may further include a hole injection layer, a hole transport layer, an electron transport layer, an electron injection layer, and the like.

[0040] The second electrode 140 may include a conductive material such as a metal. Examples of materials that can be used for the second electrode 140 include platinum, gold, silver, copper, iron, tin, chromium, aluminum, indium, lithium, sodium, potassium, calcium, magnesium, carbon, and alloys thereof. As shown in FIG. 1 , the second electrode 140 may extend across two adjacent organic layers 130 in a plan view.

[0041] Next, a method for forming the organic layer 130 on the substrate 110 by vapor deposition will be described. Fig. 2 is a diagram showing a vapor deposition apparatus 10. The vapor deposition apparatus 10 performs a vapor deposition process for depositing a vapor deposition material on an object.

[0042] 2 , the vapor deposition apparatus 10 may include therein a vapor deposition source 6, a heater 8, and a mask 20. The vapor deposition apparatus 10 may further include an exhaust unit for creating a vacuum atmosphere inside the vapor deposition apparatus 10. The vapor deposition source 6 is, for example, a crucible. The vapor deposition source 6 contains a vapor deposition material 7 such as an organic material or a metal material. The heater 8 heats the vapor deposition source 6 to evaporate the vapor deposition material 7 under a vacuum atmosphere.

[0043] The mask 20 includes an incident surface 201, an exit surface 202, and a second opening 41. The incident surface 201 faces the deposition source 6. The exit surface 202 is located on the opposite side of the incident surface 201. The exit surface 202 faces the first surface 111 of the substrate 110. A portion of the deposition material 7 that enters the mask 20 from the exit surface 202 passes through the second opening 41 and exits from the exit surface 202. The deposition material 7 that exits from the exit surface 202 adheres to the first surface 111 of the substrate 110. The exit surface 202 of the mask 20 may be in contact with the first surface 111 of the substrate 110.

[0044] As shown in FIG. 2 , the deposition apparatus 10 may include a magnet 5 disposed on the second surface 112 side of the substrate 110. When the mask 20 includes a magnetic material, the magnet 5 can magnetically attract the mask 20 toward the substrate 110. As a result, the gap between the mask 20 and the substrate 110 can be reduced or eliminated. Therefore, the occurrence of a shadow during the deposition process can be suppressed. In this application, a shadow refers to a phenomenon in which the thickness of the organic layer 130 formed near the wall surface of the second opening 41 is smaller than the thickness of the organic layer 130 formed at the center of the second opening 41. The shadow occurs due to the deposition material 7 adhering to the wall surface of the mask 20, the deposition material 7 entering the gap between the mask 20 and the substrate 110, or the like.

[0045] Next, the mask 20 will be described in detail. FIG. 3 is a plan view showing an example of the mask 20 when viewed from the incident surface 201 side. FIG. 4 is a plan view showing an example of the mask 20 when viewed from the exit surface 202 side. FIG. 5A is an enlarged view of the portion surrounded by the two-dot chain line in FIG. 3. FIG. 5B is an enlarged view of the portion surrounded by the two-dot chain line in FIG. 3, viewed from the exit surface 202 side. FIG. 6A is a cross-sectional view of the mask 20 taken along line VI-VI in FIG. 3. FIG. 6B is an enlarged view of the portion surrounded by the two-dot chain line in FIG. 6A.

[0046] 6A , the mask 20 includes a mask body 21. The mask body 21 includes a first layer 30 and a metal layer 40. The mask body 21 may also include an intermediate layer 50. The first layer 30, the intermediate layer 50, and the metal layer 40 may be arranged in this order from the incident surface 201 toward the exit surface 202. The mask 20 may further include a heat dissipation promotion layer 60. In other words, the mask 20 may include the mask body 21 and the heat dissipation promotion layer 60. Each layer will be described below.

[0047] The first layer 30 includes a first surface 301, a second surface 302, a first opening 31, and a first wall surface 32. The first surface 301 may constitute the incident surface 201. The second surface 302 is located on the opposite side of the first surface 301. The first wall surface 32 is located between the first surface 301 and the second surface 302.

[0048] The first opening 31 penetrates the first layer 30 from the first surface 301 to the second surface 302. As shown in Fig. 3 , the first layer 30 may include a plurality of first openings 31. The plurality of first openings 31 may be aligned in a first direction D1 and a second direction D2. The second direction D2 may be perpendicular to the first direction D1. The first direction D1 and the second direction D2 are directions parallel to the first surface 301.

[0049] One first opening 31 may correspond to one screen of the organic EL display device. The mask 20 including multiple first openings 31 can simultaneously form organic layer patterns corresponding to multiple screens on the substrate 110. As shown in Figure 3, the first opening 31 may have a rectangular outline in a plan view.

[0050] The first wall surface 32 faces the first opening 31. In the example shown in FIG.

[0051] As shown in Fig. 3 , the region of the first layer 30 where the first openings 31 are not formed may be divided into an outer region 35 and an inner region 36. The inner region 36 is a region located between two adjacent first openings 31 in a plan view. The outer region 35 is a region located between an outer edge 303 of the first layer 30 and the first openings 31 in a plan view. As shown in Fig. 3 , the inner region 36 may extend in a first direction D1 and a second direction D2.

[0052] 3 and 4 , the first layer 30 may include alignment marks 39. The alignment marks 39 are formed, for example, on the second surface 302. The alignment marks 39 may also be formed on the first surface 301. The alignment marks 39 are used, for example, to adjust the relative position of the substrate 110 with respect to the mask 20. If the substrate 110 has a property of transmitting visible light, the alignment marks 39 can be seen through the substrate 110.

[0053] 3 and 4, the alignment mark 39 may have a circular outline in a plan view. Although not shown, the alignment mark 39 may have an outline other than a circle, such as a rectangle or a cross. The alignment mark 39 may be located in the outer region 35 or the inner region 36.

[0054] The shape of the alignment mark 39 in the cross-sectional view is arbitrary. For example, the alignment mark 39 may include a recess located on the first surface 301 or the second surface 302. The alignment mark 39 may include a hole penetrating from the first surface 301 to the second surface 302. The recess and hole may be formed by etching the first surface 301 or the second surface 302. The recess and hole may be formed by irradiating the first surface 301 or the second surface 302 with a laser. For example, the alignment mark 39 may include a layer located on the first surface 301 or the second surface 302. The layer is formed of a material different from that of the first layer 30. The alignment mark 39 may be formed in a layer other than the first layer 30.

[0055] The first layer 30 includes silicon or a silicon compound. The silicon compound is, for example, silicon carbide (SiC). The first layer 30 is fabricated, for example, by processing a silicon wafer. As shown in FIG. 3 , an outer edge 303 of the first layer 30 may include a linear portion. The linear portion is also referred to as an orientation flat. Although not shown, a notch may be formed in the outer edge 303. The notch is also referred to as a notch. The orientation flat and the notch represent the crystal orientation of the silicon wafer. The silicon compound may be glass, such as quartz glass.

[0056] The maximum dimension S1 of the first layer 30 in a plan view is, for example, 100 mm or more, or may be 150 mm or more, or may be 200 mm or more. The dimension S1 is, for example, 500 mm or less, or may be 400 mm or less, or may be 300 mm or less.

[0057] The dimension S2 of the first openings 31 in the direction in which the first openings 31 are arranged is, for example, 5 mm or more, or may be 10 mm or more, or may be 20 mm or more. The dimension S2 is, for example, 100 mm or less, or may be 50 mm or less, or may be 30 mm or less.

[0058] The distance S3 between two first openings 31 in the direction in which the first openings 31 are arranged is, for example, 0.1 mm or more, or may be 0.5 mm or more, or 1.0 mm or more. The distance S3 is, for example, 20 mm or less, or may be 15 mm or less, or may be 10 mm or less.

[0059] The thickness of the first layer 30 is defined as the maximum thickness T1 of the outer region 35. The thickness T1 is, for example, 50 μm or more, or may be 100 μm or more, or may be 200 μm or more. The thickness T1 is, for example, 1000 μm or less, or may be 800 μm or less, or may be 600 μm or less.

[0060] Next, the metal layer 40 will be described. The metal layer 40 includes a third surface 401, a fourth surface 402, a plurality of second openings 41, a second wall surface 42, a third opening 43, and a third wall surface 44. The metal layer 40 may also include a plurality of third openings 43. The third surface 401 faces the second surface 302 of the first layer 30. The fourth surface 402 is located on the opposite side of the third surface 401. The second openings 41 and the third openings 43 penetrate the metal layer 40 from the third surface 401 to the fourth surface 402. The second wall surface 42 and the third wall surface 44 are located between the third surface 401 and the fourth surface 402. The second wall surface 42 faces the second opening 41. The third wall surface 44 faces the third opening 43.

[0061] The metal layer 40 may be divided into a peripheral region 48 and an effective region 49 (see FIGS. 5B and 6A ). The effective region 49 overlaps with the first opening 31. In the illustrated example, the effective region 49 overlaps with a fourth opening 54 of the intermediate layer 50, which will be described later. The peripheral region 48 is a region that surrounds the effective region 49. At least a portion of the peripheral region 48 overlaps with the first layer 30 in a planar view. A portion of the peripheral region 48 may overlap with the first opening 31. In the illustrated example, the peripheral region 48 overlaps with the intermediate layer 50 in a planar view.

[0062] The second openings 41 are formed in the effective area 49. One second opening 41 corresponds to one vapor deposition layer. One vapor deposition layer is, for example, one organic layer 130. A group of the regularly arranged second openings 41 corresponds to one screen of the organic EL display device. As shown in FIG. 3 , a group of the regularly arranged second openings 41 may overlap one first opening 31 in a plan view. Furthermore, as shown in FIG. 5A , a group of the regularly arranged second openings 41 may overlap one fourth opening 54 in a plan view.

[0063] The third opening 43 is formed in the peripheral region 48. The third opening 43 overlaps the inner region 36 of the first layer 30 in a planar view. The third opening 43 may overlap the outer region 35 of the first layer 30 in a planar view. In the example shown in FIG. 6A , the third opening 43 overlaps the intermediate layer 50 in a planar view. In this example, the third opening 43 may overlap a portion of the first opening 31 in a planar view. In this case, the end of the third opening 43 on the third surface 401 side may be closed by the intermediate layer 50. Note that the end of the third opening 43 on the third surface 401 side may be closed by the first layer 30. By closing the third opening 43, when a deposition layer is formed on the substrate 110 using the mask 20, the deposition material from the deposition source 6 is prevented from passing through the third opening 43 and adhering to the substrate 110.

[0064] When forming a deposition layer on the substrate 110 using the mask 20, the incident surface 201 of the mask 20 is exposed to the vapor of the deposition material 7 and the heat of the heater 8, thereby heating the entire mask 20. When performing deposition processes multiple times in succession to form deposition layers on multiple substrates 110, the temperature of the mask 20 gradually increases. On the other hand, fluctuations in deposition conditions are undesirable for uniform product quality. Therefore, it is desirable to suppress the temperature increase of the mask 20 during the deposition process. In the illustrated example, the third opening 43 is formed in the peripheral region 48, thereby increasing the surface area of ​​the mask body 21 on the side of the exit surface 202. As a result, heat can be efficiently dissipated from the exit surface 202 of the mask 20. As a result, the temperature increase of the mask 20 during the deposition process can be suppressed.

[0065] The shape of the third opening 43 in a plan view is not particularly limited. The shape of the third opening 43 in a plan view may be the same as or different from the shape of the second opening 41 in a plan view. The shape of the third opening 43 in a plan view may be any polygonal shape such as a triangle, a rectangle, or a hexagon. Alternatively, the shape of the third opening 43 in a plan view may be a circle.

[0066] As shown in FIG. 6B , the second wall surface 42 may include a tapered surface 42a that widens away from the center of the second opening 41 as it moves from the fourth surface 402 toward the third surface 401. Including the tapered surface 42a in the second wall surface 42 can prevent a shadow from being generated near the second wall surface 42. In the illustrated example, the three-dimensional shape of the second opening 41 is a truncated pyramid overall. The second wall surface 42 corresponds to the side surface of the truncated pyramid. Of course, the three-dimensional shape of the second opening 41 may also be a truncated cone. Furthermore, the second wall surface 42 does not have to include the tapered surface 42a. In this case, the three-dimensional shape of the second opening 41 may be a prismatic or cylindrical shape.

[0067] 6B , symbol S4 denotes the width of tapered surface 42 a in the direction in which second openings 41 are aligned. Width S4 is, for example, 0.2 μm or more, or may be 0.5 μm or more, or 1.0 μm or more. Width S4 is, for example, 25 μm or less, or may be 20 μm or less, or may be 10 μm or less.

[0068] 6B , the symbol θ1 represents the angle formed between the second wall surface 42 and the third surface 401. The angle θ1 is, for example, 50° or more, and may be 55° or more, 60° or more, or 65° or more. The angle θ1 is, for example, less than 90°, and may be 85° or less, or may be 80° or less.

[0069] The three-dimensional shape of the third opening 43 is not particularly limited. The three-dimensional shape of the third opening 43 may be the same as or different from the three-dimensional shape of the second opening 41. In the illustrated example, the three-dimensional shape of the third opening 43 is cylindrical overall, but this is not limited thereto. The three-dimensional shape of the third opening 43 may also be prismatic overall. The third wall surface 44 may include a tapered surface. In this case, the three-dimensional shape of the third opening 43 may be a truncated pyramid or a truncated cone overall. The width of the tapered surface of the third wall surface 44 may be the same as or different from the tapered surface 42a of the second wall surface 42 of the second opening 41. Furthermore, the angle formed between the tapered surface of the third wall surface 44 and the third surface 401 may be the same as or different from the angle θ1 formed between the tapered surface 42a of the second wall surface 42 and the third surface 401.

[0070] The dimension S5 of the second opening 41 in a plan view is, for example, 1.0 μm or more, or may be 2.0 μm or more, or 3.0 μm or more. The dimension S5 is, for example, 25 μm or less, or may be 10 μm or less, or may be 5.0 μm or less.

[0071] The pitch of the second openings 41 refers to the distance P1 between the centers of two adjacent second openings 41 in the direction in which the two second openings 41 are arranged. The pitch P1 of the second openings 41 is, for example, 1.0 μm or more, or may be 2.0 μm or more, or 3.0 μm or more. The pitch P1 is, for example, 25 μm or less, or may be 10 μm or less, or 5.0 μm or less.

[0072] The distance S6 between two second openings 41 in the direction in which the second openings 41 are arranged is, for example, 1.0 μm or more, or may be 2.0 μm or more, or 3.0 μm or more. The distance S6 is, for example, 25.0 μm or less, or may be 10.0 μm or less, or may be 5.0 μm or less.

[0073] A distance S7 between the first wall surface 32 and the second opening 41 in a plan view may be larger than the distance S6. The larger the distance S7, the more easily the deposition material moving from the first wall surface 32 toward the second opening 41 close to the first wall surface 32 passes through the second opening 41. When the distance S7 is larger than the distance S6, it is possible to suppress the occurrence of a shadow at the second opening 41 close to the first wall surface 32.

[0074] The dimension S8 of the third opening 43 in a plan view is not particularly limited. The dimension S8 of the third opening 43 may be the same as or different from the dimension S5 of the second opening 41. The dimension S8 of the third opening 43 is, for example, 1.0 μm or more, 2.0 μm or more, or 3.0 μm or more. The dimension S8 is, for example, 25 μm or less, 10 μm or less, or 5.0 μm or less.

[0075] The pitch of the third openings 43 refers to the distance P2 between the centers of two adjacent third openings 43 in the direction in which the two third openings 43 are aligned. The pitch P2 of the third openings 43 is not particularly limited. The pitch P2 of the third openings 43 may be the same as or different from the pitch P1 of the second openings 41. The pitch P2 of the third openings 43 is, for example, 1.0 μm or more, 2.0 μm or more, or 3.0 μm or more. The pitch P2 is, for example, 25 μm or less, 10 μm or less, or 5.0 μm or less.

[0076] The metal layer 40 includes a metal. The metal may be a magnetic material or a non-magnetic material. Examples of magnetic materials include nickel, iron, cobalt, and alloys thereof. Examples of non-magnetic materials include copper, aluminum, titanium, chromium, and alloys thereof. The metal layer 40 may include a semiconductor. For example, the metal layer 40 may include polycrystalline silicon. The metal layer 40 may be composed of a single layer or multiple layers.

[0077] The thickness of the metal layer 40 is defined as the maximum thickness T2 of the peripheral region 48. The thickness T2 of the metal layer 40 is smaller than the thickness T1 of the first layer 30. The thickness T2 is, for example, 25.0 μm or less, and may be 10.0 μm or less, or 5.0 μm or less. As a result, the occurrence of shadows can be suppressed. The thickness T2 is, for example, 0.5 μm or more, and may be 1.0 μm or more, or 2.0 μm or more. As a result, the occurrence of defects such as pinholes or deformations in the metal layer 40 can be suppressed.

[0078] The metal layer 40 may include an alignment mark. The alignment mark of the metal layer 40 may be formed separately from the alignment mark 39 of the first layer 30, or may be formed instead of the alignment mark 39 of the first layer 30.

[0079] Next, the intermediate layer 50 will be described. In the example shown in Figures 6A and 6B, the intermediate layer 50 is located between the first layer 30 and the metal layer 40. The intermediate layer 50 includes a fifth surface 501, a sixth surface 502, a fourth opening 54, and a fourth wall surface 55. The fifth surface 501 faces the second surface 302 of the first layer 30. The sixth surface 502 is located on the opposite side of the fifth surface 501 and faces the third surface 401 of the metal layer 40. The fourth opening 54 penetrates the intermediate layer 50 from the fifth surface 501 to the sixth surface 502. The fourth wall surface 55 is located between the fifth surface 501 and the sixth surface 502. The fourth wall surface 55 faces the fourth opening 54.

[0080] The intermediate layer 50 is positioned so as not to overlap the second opening 41 in a plan view. As a result, it is possible to suppress the generation of a shadow caused by the intermediate layer 50. The intermediate layer 50 may be positioned so as to overlap the third opening 43. The intermediate layer 50 may close the end of the third opening 43 on the third surface 401 side.

[0081] 3, the intermediate layer 50 may include a plurality of fourth openings 54. The plurality of fourth openings 54 may be aligned in the first direction D1 and the second direction D2. As shown in FIG. 3, the fourth openings 54 may have a rectangular outline in a plan view.

[0082] 5A , one fourth opening 54 may overlap one first opening 31. Alternatively, one fourth opening 54 may overlap a group of a plurality of regularly arranged second openings 41. In other words, the fourth opening 54 may overlap the active region 49. The intermediate layer 50 may overlap the peripheral region 48.

[0083] As described above, the fourth wall surface 55 faces the fourth opening 54. In the example shown in Fig. 6A, the fourth wall surface 55 may extend along the normal direction of the fifth surface 501. In a plan view, the fourth wall surface 55 may be located within the first opening 31. In other words, the fourth opening 54 may overlap with a portion of the first opening 31. The fourth wall surface 55 may define the boundary between the effective region 49 and the peripheral region 48.

[0084] A distance S9 between the fourth wall surface 55 and the second opening 41 in a plan view may be larger than the distance S6. The larger the distance S9, the more easily the deposition material moving from the fourth wall surface 55 toward the second opening 41 close to the fourth wall surface 55 passes through the second opening 41. When the distance S9 is larger than the distance S6, it is possible to suppress the occurrence of a shadow in the second opening 41 close to the fourth wall surface 55.

[0085] The intermediate layer 50 includes a layer that performs some function for the first layer 30 or the metal layer 40. For example, the intermediate layer 50 includes a stopper layer 51. The stopper layer 51 is located between the first layer 30 and the metal layer 40. The stopper layer 51 may be in contact with the second surface 302 of the first layer 30. The stopper layer 51 may form a fifth surface 501 of the intermediate layer 50.

[0086] The stopper layer 51 may have a function of stopping etching in the step of processing the first layer 30 by etching. Specifically, the stopper layer 51 is resistant to an etchant that etches the first layer 30. The stopper layer 51 may include, for example, a metal material, an inorganic compound, an organic compound, etc. Examples of the metal material include aluminum, an aluminum alloy, titanium, or a titanium alloy. Examples of the aluminum alloy include aluminum and neodymium. Examples of the inorganic compound include silicon oxide, etc. Examples of the organic compound include resin. The organic compound may be photosensitive. For example, the stopper layer 51 may include a photoresist. The organic compound does not have to be photosensitive.

[0087] The thickness of the stopper layer 51 is not particularly limited as long as it can prevent the metal layer 40 from being etched in the process of processing the first layer 30. For example, the thickness of the stopper layer 51 may be smaller than the thickness of the metal layer 40 or may be greater than or equal to the thickness of the metal layer 40. The thickness of the stopper layer 51 is, for example, 5 nm or greater, 50 nm or greater, or 75 nm or greater. The thickness of the stopper layer 51 is, for example, 100 μm or less, 50 μm or less, 10.0 μm or less, 5.0 μm or less, 1.0 μm or less, or 150 nm or less. The higher the resistance of the stopper layer 51 to the etchant for the first layer 30, the smaller the thickness of the stopper layer 51 can be. It is particularly preferable that the thickness of the stopper layer 51 be 1.0 μm or less.

[0088] The intermediate layer 50 may include a seed layer 52. The seed layer 52 may be located between the stopper layer 51 and the metal layer 40. The seed layer 52 may be in contact with the third surface 401 of the metal layer 40. The seed layer 52 may form a sixth surface 502 of the intermediate layer 50.

[0089] The seed layer 52 carries charge to the plating solution when the metal layer 40 is formed by electrolytic plating. Specifically, the seed layer 52 may contain a conductive material such as a metal material or a conductive oxide. More specifically, the seed layer 52 may contain gold, copper, nickel, titanium, aluminum, iron, chromium, tantalum, tungsten, indium tin oxide (ITO), or an alloy thereof. For example, the seed layer 52 may contain an iron alloy containing nickel. An example of an iron alloy containing nickel is permalloy. Permalloy is an iron alloy containing 35% to 80% by weight of nickel.

[0090] The seed layer 52 may be formed by, for example, electroless plating, sputtering, vacuum deposition, or ion plating. The seed layer 52 includes a seventh surface 521 facing the second surface 302 of the first layer 30 and an eighth surface 522 located on the opposite side of the seventh surface 521. In the illustrated example, the eighth surface 522 forms the sixth surface 502 of the intermediate layer 50.

[0091] The thickness of the seed layer 52 is not particularly limited as long as it is capable of forming the metal layer 40. For example, the thickness of the seed layer 52 may be smaller than the thickness T2 of the metal layer 40 or may be equal to or greater than the thickness T2 of the metal layer 40. The thickness of the seed layer 52 is, for example, 2.0 nm or more, 10.0 nm or more, or 30.0 nm or more. The thickness of the seed layer 52 is, for example, 5.0 μm or less, 1.0 μm or less, or 150 nm or less.

[0092] The intermediate layer 50 may include an adhesion layer 53 between the stopper layer 51 and the seed layer 52 to improve adhesion between the stopper layer 51 and the seed layer 52. The adhesion layer 53 may include titanium, chromium, titanium oxide, chromium nitride, or zinc oxide. Such an adhesion layer 53 may be formed by, for example, a sol-gel method, a sputtering method, or a vacuum deposition method. The thickness of the adhesion layer 53 is not particularly limited, but may be, for example, 5 nm or more, 6 nm or more, or 8 nm or more. The thickness of the adhesion layer 53 may be, for example, 70 nm or less, 60 nm or less, or 50 nm or less.

[0093] The intermediate layer 50 may include an alignment mark. The alignment mark of the intermediate layer 50 may be formed separately from the alignment mark of the first layer 30 or the metal layer 40, or may be formed instead of the alignment mark of the first layer 30 or the metal layer 40.

[0094] The heat dissipation promotion layer 60 promotes heat dissipation from the side of the emission surface 202 of the mask 20. The heat dissipation promotion layer 60 is disposed in at least some of the third openings 43. The heat dissipation promotion layer 60 may be disposed in all of the third openings 43. The heat dissipation promotion layer 60 may be exposed on the side of the emission surface 202 of the mask 20.

[0095] In the illustrated example, the heat dissipation promotion layer 60 is in contact with the third wall surface 44 of the third opening 43. As a result, heat from the metal layer 40 can be directly conducted to the heat dissipation promotion layer 60. Also, in the illustrated example, the heat dissipation promotion layer 60 is in contact with the intermediate layer 50. As a result, heat from the intermediate layer 50 can be directly conducted to the heat dissipation promotion layer 60. Also, in the illustrated example, at least a portion of the heat dissipation promotion layer 60 overlaps with the first layer 30 in a plan view. As a result, heat from the first layer 30 can be effectively conducted to the heat dissipation promotion layer 60 via the intermediate layer 50. Also, at least a portion of the heat dissipation promotion layer 60 may be in contact with the first layer 30. In this case, heat from the first layer 30 can be directly conducted to the heat dissipation promotion layer 60.

[0096] The heat dissipation promotion layer 60 preferably contains a material with high emissivity. For example, the emissivity of the material of the heat dissipation promotion layer 60 may be higher than the emissivity of the material of the metal layer 40. Due to the high emissivity of the material of the heat dissipation promotion layer 60, the heat dissipation promotion layer 60 can efficiently radiate heat received from the metal layer 40, the intermediate layer 50, and / or the first layer 30 from the side of the exit surface 202 of the mask 20. As a result, it is possible to suppress a temperature rise of the metal layer 40, the intermediate layer 50, and / or the first layer 30 due to the vapor deposition process. The heat dissipation promotion layer 60 may contain, for example, silicon oxide, silicon nitride, or silicon oxynitride. Silicon nitride has the chemical formula Si ｘ N ｙ Silicon oxynitride may be represented by the chemical formula Si ｘ O ｙ N ｚ The heat dissipation promotion layer 60 may be formed of, for example, silane SiH ４ and / or nitrogen oxides N ２ O and / or ammonia NH ３ and / or nitrogen N ２ It may be formed by low pressure chemical vapor deposition or plasma chemical vapor deposition using as a raw material.

[0097] The thickness of the heat dissipation promotion layer 60 is preferably equal to or less than the thickness T2 of the metal layer 40. As a result, the heat dissipation promotion layer 60 can prevent a gap from being formed between the fourth surface 402 of the metal layer 40 and the substrate 110. This can prevent a shadow from being generated during the vapor deposition process. The thickness of the heat dissipation promotion layer 60 is, for example, 25.0 μm or less, or may be 10.0 μm or less, or may be 5.0 μm or less. The thickness of the heat dissipation promotion layer 60 is, for example, 0.5 μm or more, or may be 1.0 μm or more, or may be 2.0 μm or more.

[0098] The thickness of each layer, the dimensions of each component, the spacing, etc. can be measured by observing an image of the cross section of the mask 20 using a scanning electron microscope.

[0099] (Method for manufacturing deposition mask) Next, a method for manufacturing the mask 20 according to this embodiment will be described with reference to FIGS. 7 to 18 . First, a first layer 30 is prepared. A silicon wafer may be used as the first layer 30. The first surface 301 and the second surface 302 of the first layer 30 may be polished to a mirror finish. The arithmetic mean roughness Ra of the first surface 301 and the second surface 302 may be 1.5 nm or less, or 1.0 nm or less. The plane orientation of the first surface 301 and the second surface 302 may be (100), (110), or the like.

[0100] 7 , the second surface 302 of the first layer 30 includes a first region 305 and a second region 306. The first region 305 is a region corresponding to the first opening 31 described above. The second region 306 is a region corresponding to the outer region 35 and inner region 36 described above. The second region 306 surrounds the first region 305.

[0101] Subsequently, an intermediate layer forming step is performed to form an intermediate layer 50 on the second surface 302 of the first layer 30. As a result, as shown in FIG. 8 , a laminate 59 including the first layer 30 and the intermediate layer 50 is produced. Specifically, a stopper layer 51, an adhesion layer 53, and a seed layer 52 are laminated in this order on the second surface 302. The stopper layer 51 may be formed by a vacuum film formation method such as sputtering. The adhesion layer 53 may be formed by a sol-gel method, sputtering, or vacuum deposition. The seed layer 52 may be formed by an electroless plating method, sputtering, vacuum deposition, or ion plating.

[0102] 8 , the sixth surface 502 of the seed layer 52 includes a third region 525 and a fourth region 526. The third region 525 is a region corresponding to the effective region 49 of the metal layer 40 described above. The fourth region 526 is a region corresponding to the peripheral region 48 of the metal layer 40 described above. The fourth region 526 surrounds the third region 525. The dimensions of the third region 525 and the fourth region 526 may be the same as the dimensions of the effective region 49 and the peripheral region 48, respectively.

[0103] The intermediate layer 50 is formed to cover at least the first region 305. The intermediate layer 50 may also cover the second region 306. For example, the intermediate layer 50 may be formed over the entire second surface 302.

[0104] 9A , a resist pattern formation step is performed to form a plurality of first resist convex portions 70 and a plurality of second resist convex portions 75 on the sixth surface 502 of the seed layer 52. As a result, a plurality of resist convex portions 70, 75 protruding from the sixth surface 502 are formed in the third region 525 and the fourth region 526.

[0105] 9B is an enlarged view of the area surrounded by the two-dot chain line in FIG. 9A. A plurality of first resist protrusions 70 are formed on the third region 525 in correspondence with the second openings 41. A plurality of second resist protrusions 75 are formed on the fourth region 526 in correspondence with the third openings 43.

[0106] The resist convex portions 70 and 75 are, for example, photoresists. The photoresists are positive resists. Examples of positive resists include iP5700, PMER-P-LA900PM, and PMER-P7100 manufactured by Tokyo Ohka Kogyo Co., Ltd., and NPR9700 manufactured by Nagase ChemteX.

[0107] The height T3 of the resist convex portions 70, 75 is defined as the distance between the top of the resist convex portion 70 and the sixth surface 502. The height T3 is greater than the thickness T2 of the metal layer 40. The height T3 is, for example, 1.0 μm or more, may be 2.0 μm or more, or may be 4.0 μm or more. The height T3 is, for example, 30.0 μm or less, may be 20.0 μm or less, or may be 10.0 μm or less.

[0108] The first resist protrusions 70 have a three-dimensional shape corresponding to the three-dimensional shape of the second opening 41. The side surfaces 71 of the first resist protrusions 70 have a shape corresponding to the second wall surfaces 42 of the second opening 41. In the illustrated example, the second opening 41 is generally truncated pyramidal. Correspondingly, the first resist protrusions 70 may also be generally truncated pyramidal. Note that if the second opening 41 is generally truncated conical, the first resist protrusions 70 may also be generally truncated conical. Furthermore, if the second opening 41 is generally prismatic or cylindrical, the first resist protrusions 70 may also be generally prismatic or cylindrical.

[0109] The second resist protrusions 75 have a three-dimensional shape corresponding to the three-dimensional shape of the third opening 43. The side surfaces 76 of the second resist protrusions 75 have a shape corresponding to the third wall surfaces 44 of the third opening 43. In the illustrated example, the third opening 43 is cylindrical as a whole. Correspondingly, the second resist protrusions 75 may also be cylindrical as a whole. Note that if the third opening 43 is prismatic as a whole, the second resist protrusions 75 may also be prismatic as a whole. Furthermore, if the second resist protrusions 75 are frustum-shaped or truncated conical as a whole, the second resist protrusions 75 may also be frustum-shaped or truncated conical as a whole.

[0110] The resist pattern forming step includes, for example, a first resist layer forming step, an exposure step, and a development step.

[0111] The first resist layer forming step is a step of forming a first resist layer on the sixth surface 502. The first resist layer forming step includes, for example, a step of applying a liquid resist to the sixth surface 502. The first resist layer forming step may include a step of heating the liquid resist on the sixth surface 502. The first resist layer is formed by drying the liquid resist.

[0112] In the exposure step, the first resist layer is irradiated with light so that in a subsequent development step, the first resist layer remains in the portions of the third region 525 and the fourth region 526 corresponding to the second opening 41 and the third opening 43, and the first resist layer is removed from other portions on the sixth surface 502. Specifically, because the first resist layer is a positive resist, light is irradiated onto the first resist layer in the above-mentioned other portions on the sixth surface 502. The light is, for example, i-line. The i-line is a spectral line of mercury having a wavelength of 365 nm.

[0113] In the exposure process, parameters such as the exposure dose and the focal position may be adjusted. The exposure dose is, for example, 150 mJ / cm ２ or more, and 175 mJ / cm ２ or more, and 200 mJ / cm ２ The exposure dose may be, for example, 300 mJ / cm ２ or less, and 350 mJ / cm ２ or less, and 400 mJ / cm ２ or less. The focal position may be at the eighth surface 522 of the seed layer 52, or may be shifted from the eighth surface 522. For example, the focal position may be a position shifted by SH μm from the eighth surface 522 toward the seventh surface 521. The shift amount SH may be, for example, 1 μm or more, 2 μm or more, or 3 μm or more. The shift amount SH may be, for example, 6 μm or less, 8 μm or less, or 10 μm or less. By adjusting these parameters, the dimensions and three-dimensional shape of the resist protrusions 70 and 75 can be controlled. By controlling the dimensions and three-dimensional shape of the resist protrusions 70 and 75, the dimensions and three-dimensional shape of the second opening 41 and the third opening 43 can be controlled. In particular, the angle θ1 of the tapered surface 42 a of the second opening 41 can be controlled.

[0114] After the exposure step, the first resist layer is developed to obtain a plurality of resist convex portions 70, 75 in the third region 525 and the fourth region 526. The developer contains, for example, TMAH (tetramethylammonium hydroxide).

[0115] Subsequently, a metal layer forming step is performed to form a metal layer 40 on the sixth surface 502. The metal layer forming step may include a plating step. That is, the metal layer 40 may be formed by a plating step. The plating step may be an electrolytic plating step or an electroless plating step. When an electrolytic plating step is performed, the intermediate layer 50 includes a seed layer 52.

[0116] In the plating process, a plating solution containing ions of the metal that will form the metal layer 40 is supplied onto the sixth surface 502. As a result, the metal layer 40 is formed on the sixth surface 502, as shown in FIG. 10 . When forming the metal layer 40 by electrolytic plating, a plating power source is connected to the seed layer 52, and the laminate 59 is immersed in a plating bath containing a plating solution. As a result, metal is deposited in the gaps between the resist convex portions 70, 75 on the sixth surface 502, and the metal layer 40 is formed.

[0117] Openings 41, 43 are formed in the metal layer 40 corresponding to the plurality of resist protrusions 70, 75. The shapes and dimensions of the openings 41, 43 correspond to the shapes and dimensions of the side surfaces 71, 76 of the corresponding resist protrusions 70, 75.

[0118] The thickness T2 of the metal layer 40 can be controlled by the current value from the plating power source, the time for which electricity is applied to the plating power source, the time for which the metal layer 40 is immersed in the plating solution, and the like.

[0119] The metal layer forming step may include an annealing step of heating the metal layer 40. In this case, strain occurring inside the metal layer 40 can be reduced. In the annealing step, the first layer 30, the intermediate layer 50, and the metal layer 40 are maintained in an environment at a temperature higher than room temperature. The temperature in the annealing step is, for example, 120°C or higher, or may be 140°C or higher, or may be 150°C or higher. The temperature in the annealing step is, for example, 250°C or lower, or may be 220°C or lower, or may be 200°C or lower.

[0120] Subsequently, a first resist protrusion removal process is performed to remove the first resist protrusions 70, and a second resist protrusion removal process is performed to remove the second resist protrusions 75. As shown in FIG. 11 , the first resist protrusion removal process removes the first resist protrusions 70 from the second openings 41 of the metal layer 40. Also, as shown in FIG. 11 , the second resist protrusion removal process removes the second resist protrusions 75 from the third openings 43 of the metal layer 40. In the first resist protrusion removal process and the second resist protrusion removal process, the resist protrusions 70, 75 may be removed by, for example, exposing and developing the resist protrusions 70, 75. The developer may contain, for example, TMAH (tetramethylammonium hydroxide). Alternatively, the resist protrusions 70, 75 may be removed by bringing a resist treatment solution into contact with the resist protrusions 70, 75. The resist treatment solution may contain, for example, N-methyl-2-pyrrolidone. The first resist protrusion removal process and the second resist protrusion removal process may be performed simultaneously.

[0121] Next, a heat dissipation promotion layer forming step is performed in which the heat dissipation promotion layer 60 is formed on the intermediate layer 50 and the metal layer 40. As a result, the heat dissipation promotion layer 60 is disposed in the openings 41 and 43, as shown in FIG. 12 . The heat dissipation promotion layer 60 may be formed so as to cover the fourth surface 402 of the metal layer 40. In this case, the heat dissipation promotion layer 60 can be used as a protective layer that protects the metal layer 40 from the etchant that etches the first layer 30.

[0122] The heat dissipation promotion layer 60 may be formed by chemical vapor deposition. The heat dissipation promotion layer 60 may be formed by low-pressure chemical vapor deposition (LCVD) or plasma-enhanced chemical vapor deposition (PCVD). For example, silicon oxide (SiO ｘ The heat dissipation promotion layer 60 containing, for example, tetraethyl orthosilicate Si(OC ２ H ５ ) ４ It may be formed by low pressure chemical vapor deposition or plasma chemical vapor deposition using tetraethoxysilane (TEOS) as a raw material, or by silane (SiH ４ and nitrogen oxides N ２Silicon nitride may be formed by plasma enhanced chemical vapor deposition using O as a raw material. ｘ N ｙ The heat dissipation promotion layer 60 containing, for example, silane SiH ４ and / or nitrogen oxides N ２ O and / or ammonia NH ３ It may be formed by low pressure chemical vapor deposition or plasma chemical vapor deposition using as a raw material.

[0123] Subsequently, a first layer processing step is performed to form a first opening 31 in the first layer 30. In the first layer processing step, as shown in Fig. 13 , a second resist layer 80 may be formed partially on the first surface 301 of the first layer 30. A resist opening 81 facing the first opening 31 is formed in the second resist layer 80. The resist opening 81 overlaps with the first region 305 in a plan view.

[0124] The second resist layer 80 may be, for example, a photoresist. In this case, the second resist layer 80 is formed on the first surface 301 by first coating a liquid resist material on the first surface 301. After coating, a step of heating the second resist layer 80 may be performed. Subsequently, a photolithography process is performed in which the second resist layer 80 is exposed and developed. This allows resist openings 81 to be formed in the second resist layer 80.

[0125] Although not shown, the second resist layer 80 may be a silicon oxide film partially formed on the first surface 301. The silicon oxide film is formed, for example, by partially performing a thermal oxidation process on the first surface 301. The silicon oxide film may be formed on the first layer 30 before the intermediate layer 50, the metal layer 40, and the heat dissipation promotion layer 60 are stacked on the first layer 30.

[0126] Subsequently, in the first layer processing step, as shown in FIG. 14 , the first layer 30 is etched from the first surface 301 side to form a first opening 31 in the first layer 30. The etching may be dry etching using an etching gas. Since the stopper layer 51 is resistant to the etchant, as shown in FIG. 14 , the etching can be prevented from progressing to the metal layer 40. The etching gas may be, for example, SF ６ It's gas.

[0127] Subsequently, a heat dissipation promotion layer thickness reducing step is performed to remove the heat dissipation promotion layer 60 on the fourth surface 402 of the metal layer 40. As a result, as shown in FIG. 15 , the thickness of the heat dissipation promotion layer 60 can be reduced to equal to or less than the thickness T2 of the metal layer 40. Methods for removing the heat dissipation promotion layer 60 on the fourth surface 402 include mechanical polishing, chemical mechanical polishing, wet etching, dry etching, and combinations thereof. Although not shown, the heat dissipation promotion layer thickness reducing step may be performed before the step of forming the first opening 31 in the first layer 30.

[0128] Next, a heat dissipation promotion layer removing step is performed to remove the heat dissipation promotion layer 60 in the second opening 41. In the heat dissipation promotion layer removing step, as shown in Fig. 16 , a first protective layer 83 may be formed partially on the fourth surface 402 of the metal layer 40 and on the heat dissipation promotion layer 60. An opening 84 is formed in the first protective layer 83. The opening 84 corresponds to the effective area 49. The opening 84 overlaps with the third area 525 in a plan view.

[0129] The first protective layer 83 is resistant to the etching solution used to remove the heat dissipation promotion layer 60. For example, when the etching solution contains buffered hydrofluoric acid, the first protective layer 83 contains a resin resistant to hydrofluoric acid. For example, the first protective layer 83 contains a photoresist resistant to hydrofluoric acid. The photoresist may contain polyimide or the like. The buffered hydrofluoric acid solution is a solution containing hydrofluoric acid and ammonium fluoride.

[0130] Subsequently, in the heat dissipation promotion layer removal step, an etching solution such as a buffered hydrofluoric acid solution is supplied toward the opening 84. As a result, as shown in Fig. 17 , the heat dissipation promotion layer 60 that overlaps with the opening 84 in plan view is removed. Therefore, the heat dissipation promotion layer 60 is removed from the second opening 41.

[0131] Subsequently, an intermediate layer removal step is performed to remove the third region 525 of the intermediate layer 50. In the intermediate layer removal step, as shown in Fig. 17 , a second protective layer 85 may be formed partially on the fifth surface 501 of the intermediate layer 50. An opening 86 is formed in the second protective layer 85. The opening 86 corresponds to the effective region 49. The opening 86 overlaps the third region 525 in a plan view.

[0132] Subsequently, in the intermediate layer removal step, an etchant for the intermediate layer 50 is supplied to the opening 86. As a result, the intermediate layer 50 that overlaps with the opening 86 in plan view is removed, as shown in Fig. 18. The removal of the intermediate layer 50 may be performed by dry etching using a fluorine-based gas or the like, or by wet etching using an acidic etching solution.

[0133] The first opening 31 is formed in the first layer 30, and the third region 525 of the intermediate layer 50 is further removed, thereby opening the end of the second opening 41 formed in the effective region 49 on the third surface 401 side. On the other hand, the end of the third opening 43 formed in the peripheral region 48 on the third surface 401 side remains closed by the intermediate layer 50 and / or the first layer 30.

[0134] 18 , after the intermediate layer removing step, a second resist layer removing step of removing the second resist layer 80, a first protective layer removing step of removing the first protective layer 83, and a second protective layer removing step of removing the second protective layer 85 are performed. The order of the second resist layer removing step, the first protective layer removing step, and the second protective layer removing step is not particularly limited. Two or three of the second resist layer removing step, the first protective layer removing step, and the second protective layer removing step may be performed simultaneously. The second resist layer removing step and the first protective layer removing step may be performed before the intermediate layer removing step.

[0135] When the second resist layer 80 is a photoresist, a second resist processing solution containing N-methyl-2-pyrrolidone may be supplied toward the second resist layer 80. The second resist layer 80 may be removed by irradiating the second resist layer 80 with oxygen plasma. When the second resist layer 80 is a silicon oxide film, a resist processing solution containing hydrofluoric acid may be supplied toward the second resist layer 80. CF ４ The second resist layer 80 may be removed by dry etching using gas or the like.

[0136] Next, an example of a method for manufacturing the organic device 100 using the mask 20 will be described.

[0137] First, a substrate 110 on which a first electrode 120 is formed is prepared. The substrate 110 may be a silicon wafer. The first electrode 120 may be formed, for example, by forming a conductive layer constituting the first electrode 120 on the substrate 110 by a vacuum film deposition method or the like, and then patterning the conductive layer by a photolithography method or the like. The patterning of the conductive layer may be performed using an apparatus for performing a semiconductor manufacturing process. An insulating layer 160 located between two adjacent first electrodes 120 may be formed on the substrate 110.

[0138] Next, the organic layer 130 including a first organic layer 130A, a second organic layer 130B, etc. is formed on the first electrode 120. For example, first, the first organic layer 130A is formed by a vapor deposition method using a first mask 20. The first mask 20 has a second opening 41 corresponding to the first organic layer 130A. Next, the second organic layer 130B is formed by a vapor deposition method using a second mask 20. The second mask 20 has a second opening 41 corresponding to the second organic layer 130B. Next, a third organic layer is formed by a vapor deposition method using a third mask 20. The third mask 20 has a second opening 41 corresponding to the third organic layer.

[0139] Next, the second electrode 140 is formed on the organic layer 130. For example, as shown in FIG. 1 , the second electrode 140 may be formed over the entire first surface 111 by a vacuum film formation method or the like. Alternatively, although not shown, the second electrode 140 may be formed by a vapor deposition method using a mask 20, similar to the organic layer 130. Thereafter, a sealing layer or the like (not shown) may be formed on the second electrode 140. In this manner, the organic device 100 can be obtained.

[0140] A plurality of organic devices 100 may be formed on one substrate 110. One organic device 100 may correspond to one first opening 31 of the mask 20. In this case, a step of cutting the substrate 110 may be performed. For example, the substrate 110 is cut along a region of the substrate 110 that corresponds to the inner region 36 of the mask 20. In this way, a plurality of organic devices 100 can be obtained.

[0141] The effect of the mask 20 when forming the organic layer 130, the second electrode 140, etc. by vapor deposition using the mask 20 will be described.

[0142] The third opening 43 formed in the peripheral region 48 of the metal layer 40 increases the surface area of ​​the mask body 21 on the side of the exit surface 202. As a result, heat dissipation from the exit surface 202 of the mask 20 can be promoted, and a temperature rise in the mask 20 due to the vapor deposition process can be suppressed.

[0143] Furthermore, since at least a portion of the third opening 43 is formed at a position overlapping the first layer 30 , heat from the first layer 30 can be effectively dissipated via the metal layer 40 .

[0144] Furthermore, since at least a portion of the third opening 43 is formed at a position overlapping with the region 36 between adjacent first openings 31 of the first layer 30, heat transferred from the vapor containing the deposition material that reaches the first opening 31 to the above-mentioned region 36 of the first layer 30 can be effectively dissipated through the metal layer 40.

[0145] Furthermore, since at least a portion of the third opening 43 is formed at a position overlapping with the first opening 31, heat transferred to the metal layer 40 from the vapor containing the deposition material that reaches the first opening 31 can be effectively dissipated.

[0146] Furthermore, since silicon oxide or silicon nitride is disposed in the third opening 43, heat from the metal layer 40 can be dissipated effectively.

[0147] The above-described embodiment can be modified in various ways. Modified examples will be described with reference to the drawings as necessary. In the following description and the drawings used in the following description, parts that can be configured similarly to the above-described embodiment will be designated by the same reference numerals as those used for corresponding parts in the above-described embodiment. Duplicate descriptions will be omitted. Furthermore, if it is clear that the effects obtained in the above-described embodiment can also be obtained in the modified examples, the description of those effects may be omitted.

[0148] (First Modification) In the example described above, the third opening 43 is formed in the peripheral region 48 of the metal layer 40, but this is not limiting. As shown in FIG. 19A , a recess 45 may be formed in the peripheral region 48. The metal layer 40 may remain between the bottom surface 451 of the recess 45 and the intermediate layer 50. In other words, the metal layer 40 does not need to have a through-hole in the peripheral region 48. In this case, too, the surface area of ​​the mask body 21 on the side of the exit surface 202 of the mask 20 is increased. As a result, heat can be efficiently dissipated from the exit surface 202 of the mask 20. Therefore, the temperature rise of the mask 20 during the vapor deposition process can be suppressed.

[0149] The thickness of a portion 40a of the metal layer 40 between the bottom surface 451 of the recess 45 and the sixth surface 502 of the intermediate layer 50 is, for example, 0.05 μm or more, or may be 0.10 μm or more, 0.50 μm or more, 0.70 μm or more, or 0.90 μm or more. The thickness of the portion 40a is, for example, 1.5 μm or less, or may be 1.25 μm or less, or 1.0 μm or less.

[0150] 19B , the metal layer 40 may include a first metal layer 411 and a second metal layer 412. The first metal layer 411 and the second metal layer 412 may include the same metal material or different metal materials.

[0151] A method for forming a metal layer 40 having a recess 45 formed in a peripheral region 48 will now be described with reference to FIGS.

[0152] After the resist pattern formation step shown in FIG. 9A , a first metal layer formation step is performed to form a first metal layer 411 on the sixth surface 502 of the intermediate layer 50. The first metal layer formation step may include a plating step. That is, the first metal layer 411 may be formed by a plating step. The thickness T4 of the first metal layer 411 may be smaller than the thickness T2 of the metal layer 40. The thickness T4 is, for example, 0.3 μm or more, 0.7 μm or more, or 1.5 μm or more. The thickness T4 is, for example, 15 μm or less, 7 μm or less, or 3 μm or less. In the first metal layer 411, openings 41 a corresponding to the first resist convex portions 70 and openings 45 a corresponding to the second resist convex portions 75 are formed.

[0153] Subsequently, a second resist convex portion removal step is performed to remove the second resist convex portions 75 formed in the fourth region 526. As a result, the second resist convex portions 75 are removed from the openings 45a, as shown in FIG.

[0154] Subsequently, a second metal layer forming step is performed to form a second metal layer 412 on the first metal layer 411 and on the intermediate layer 50 in the opening 45 a. The second metal layer forming step may include a plating step. That is, the second metal layer 412 may be formed by a plating step.

[0155] The metal layer 40 is formed by the first metal layer 411 and the second metal layer 412. The second metal layer forming step may be performed in the same manner as the first metal layer forming step. The plating solution used to form the second metal layer 412 may be the same as or different from the plating solution used to form the first metal layer 411.

[0156] 21A and 21B , in the second metal layer formation step, first resist convex portions 70 are arranged in the third region 525. As a result, a plurality of openings 41b corresponding to the plurality of first resist convex portions 70 are formed in the region of the second metal layer 412 facing the third region 525. The openings 41a in the first metal layer 411 and the openings 41b in the second metal layer 412 form the second openings 41 in the metal layer 40.

[0157] In the second metal layer forming step, the second resist convex portion 75 is not disposed in the fourth region 526. As a result, in the region of the second metal layer 412 facing the fourth region 526, the second metal layer 412 is also formed in the opening 45a of the first metal layer 411. As a result, the second metal layer 412 (i.e., the above-mentioned portion 40a) is formed on the intermediate layer 50 in the opening 45a, and the end of the opening 45a on the third surface 401 side is closed by the second metal layer 412, thereby forming the recess 45. The bottom surface 451 of the recess 45 is formed by the second metal layer 412.

[0158] As shown in FIG. 21B , the second metal layer 412 may cover the first metal layer 411 in the third region 525. The thickness T5 of the second metal layer 412 may be smaller than the thickness T4 of the first metal layer. Furthermore, the thickness T5 is determined so that the sum of the thickness T5 and the thickness T4 of the first metal layer (i.e., the thickness T2 of the metal layer) is smaller than the height T3 of the resist convex portions 70 and 75. As described above, the thickness T5 is, for example, 0.05 μm or more, 0.10 μm or more, 0.20 μm or more, 0.30 μm or more, or 0.50 μm or more. The thickness T5 is, for example, 10 μm or less, 3.0 μm or less, or 2.0 μm or less. Having the thickness T5 of 0.05 μm or more can prevent defects such as pinholes and deformations from occurring in the metal layer 40. Furthermore, by setting the thickness T5 to 10 μm or less, the thickness T5 of the second metal layer 412 in the third region 525 can be prevented from becoming non-uniform. As a result, the thickness T2 of the metal layer 40 in the effective region 49 can be prevented from becoming non-uniform, and the dimensions of the second opening 41 can be prevented from becoming non-uniform. As can be seen from FIG. 21B , the smaller the thickness T5, the larger the area of ​​the bottom surface 451, and therefore the larger the surface area on the side of the exit surface 202 of the mask body 21. The thickness T5 may be small as long as it can prevent defects such as pinholes and deformations from occurring in the metal layer 40. Reducing the lower limit of the thickness T5 to 0.05 μm can contribute to improving the efficiency of heat dissipation at the exit surface 202 of the mask 20.

[0159] The second metal layer 412 may also be formed on the wall surface of the opening 45a. In this case, the dimension S10 of the recess 45 in a plan view may be smaller than the dimension of the opening 45a of the first metal layer 411.

[0160] Subsequently, a first resist convexity removing step is carried out to remove the first resist convexity 70 formed in the third region 525. As a result, the first resist convexity 70 is removed from the second opening 41.

[0161] In this manner, the metal layer 40 is formed, which has an effective region 49 in which the second opening 41 is formed and a peripheral region 48 in which the recess 45 is formed.

[0162] (Second Modification) The method for forming the metal layer 40 having the recessed portion 45 formed in the peripheral region 48 is not limited to the method shown in Figures 20 to 22. Other methods for forming the metal layer 40 having the recessed portion 45 formed in the peripheral region 48 will be described with reference to Figures 23 to 26.

[0163] After the intermediate layer forming step shown in FIG. 8, a first resist pattern forming step is carried out to form first resist convex portions 70 on the third region 525 of the intermediate layer 50.

[0164] 23 , a third metal layer forming process is performed to form a third metal layer 413 on the sixth surface 502 of the intermediate layer 50. The third metal layer forming process may include a plating process. That is, the third metal layer forming process may be performed by a plating process. The thickness of the third metal layer 413 may be smaller than the thickness T2 of the metal layer 40. The thickness range of the third metal layer 413 may be the same as the thickness range of the second metal layer 412 described above. Openings 41c corresponding to the first resist convex portions 70 are formed in the third metal layer 413.

[0165] Subsequently, as shown in FIG. 24, a second resist pattern forming step is carried out to form second resist convex portions 75 on the regions overlapping with the fourth regions 526 of the third metal layer 413 .

[0166] 25A , a fourth metal layer formation process is performed to form a fourth metal layer 414 on the third metal layer 413. The fourth metal layer formation process may include a plating process. That is, the fourth metal layer may be formed by a plating process. The thickness range of the fourth metal layer 414 may be the same as the thickness range of the first metal layer 411 described above. As shown in FIG. 25B , openings 41 d corresponding to the first resist convex portions 70 and openings 45 b corresponding to the second resist convex portions 75 are formed in the fourth metal layer 414.

[0167] The third metal layer 413 and the fourth metal layer 414 form the metal layer 40. The plating process for forming the fourth metal layer 414 may be performed in the same manner as the plating process for forming the third metal layer 413. The plating solution used for forming the fourth metal layer 414 may be the same as or different from the plating solution used for forming the third metal layer 413.

[0168] 25B , the end of the opening 45b corresponding to the second resist convex portion 75 is closed by the third metal layer 413. In this example, the third metal layer 413 forms the above-mentioned portion 40a. Therefore, the third metal layer 413 forms the bottom surface 451 of the recess 45. The bottom surface 451 and the wall surface of the opening 45b define the recess 45.

[0169] Subsequently, a first resist convexity removal step is performed to remove the first resist convexity 70 formed in the third region 525, and a second resist convexity removal step is performed to remove the second resist convexity 75 formed on the third metal layer 413. As a result, as shown in FIG. 26 , the first resist convexity 70 is removed from the second opening 41, and the second resist convexity 75 is removed from the recess 45.

[0170] In this manner, the metal layer 40 is formed, which has an effective region 49 in which the second opening 41 is formed and a peripheral region 48 in which the recess 45 is formed.

[0171] (Third Modification) In the above-described example, the heat dissipation promotion layer 60 is formed after the metal layer 40 is formed, but this is not limiting. A method of forming the heat dissipation promotion layer 60 before forming the metal layer 40 will be described with reference to FIGS.

[0172] After the intermediate layer forming step shown in FIG. 8 , a heat dissipation promotion layer forming step is performed in which a heat dissipation promotion layer 60 is formed on the intermediate layer 50. As shown in FIG. 27 , the heat dissipation promotion layer 60 may be formed to cover the third region 525 and the fourth region 526 of the intermediate layer 50. For example, the heat dissipation promotion layer 60 may be formed on the entire sixth surface 502. As described above, the heat dissipation promotion layer 60 may be formed by chemical vapor deposition. The thickness of the heat dissipation promotion layer 60 may be equal to or greater than the thickness T2 of the metal layer 40.

[0173] Next, a heat dissipation promotion layer processing step is performed to form a plurality of first convex portions 61 and a plurality of second convex portions 65 on the heat dissipation promotion layer 60. As a result, as shown in FIG. 28 , a plurality of convex portions 61, 65 protruding from the sixth surface 502 are formed in the third region 525 and the fourth region 526. The plurality of first convex portions 61 are formed on the third region 525 in correspondence with the second openings 41. The plurality of second convex portions 65 are formed on the fourth region 526 in correspondence with the third openings 43. The three-dimensional shape of the first convex portions 61 may be the same as the three-dimensional shape of the first resist convex portions 70 described above. The three-dimensional shape of the second convex portions 65 may be the same as the three-dimensional shape of the second resist convex portions 75 described above. The height of the convex portions 61, 65 may be equal to or greater than the thickness T2 of the metal layer 40.

[0174] There are no particular limitations on the method for processing the heat dissipation promotion layer 60 to form the convex portions 61, 65. For example, the heat dissipation promotion layer 60 may be processed by dry etching using an etching gas. The dry etching may be reactive ion etching.

[0175] Next, a metal layer forming step is performed to form a metal layer 40 on the intermediate layer 50. The metal layer forming step may include a plating step. That is, the metal layer 40 may be formed by a plating step. As shown in FIG. 29 , a second opening 41 corresponding to the first convex portion 61 and a third opening 43 corresponding to the second convex portion 65 are formed in the metal layer 40.

[0176] Subsequently, a first convex portion removing step is performed to remove the first convex portion 61. In the first convex portion removing step, a first protective layer 83 may be formed to cover the second convex portion 65, as shown in FIG.

[0177] Subsequently, in the first convex portion removal step, an etching solution such as a buffered hydrofluoric acid solution is supplied toward the opening 84 of the first protective layer 83. As a result, the first convex portion 61 that overlaps with the opening 84 in plan view is removed. In other words, the heat dissipation promotion layer 60 is removed from the second opening 41. In addition, the second convex portion 65 remains on the intermediate layer 50. In other words, the heat dissipation promotion layer 60 in the third opening 43 remains on the intermediate layer 50.

[0178] After the first protrusions 61 are removed, a step of removing the first protective layer 83 may be performed. Furthermore, before forming the first protective layer 83 or after removing the first protective layer 83, a step of reducing the thickness of the heat dissipation promotion layer 60 to be equal to or less than the thickness T2 of the metal layer 40 may be performed.

[0179] In this manner, the heat dissipation promotion layer 60 can be disposed within the third opening 43 .

[0180] (Fourth Modification) For example, after forming the metal layer 40, a metal layer planarization step may be performed to planarize the fourth surface 402 of the metal layer 40. Planarizing the fourth surface 402 of the metal layer 40 can prevent gaps from forming between the metal layer 40 and components on the substrate 110. This also contributes to suppressing shadows. Methods that can be used to planarize the fourth surface 402 of the metal layer 40 include mechanical polishing, chemical mechanical polishing, wet etching, dry etching, and combinations thereof. The metal layer planarization step may be performed simultaneously with the heat dissipation promotion layer thickness reduction step.

[0181] (Fifth Modification) For example, in the above example, the metal layer 40 is formed by a plating process, but this is not limiting. The metal layer 40 may also be formed by a physical film formation method or a printing method. Physical film formation methods include sputtering, vapor deposition, and ion plating. Physical film formation and printing methods can improve the flatness of the fourth surface 402 of the metal layer 40 compared to plating. Therefore, the load of the metal layer planarization process can be reduced. For example, the time required for the metal layer planarization process can be reduced.

[0182] Sixth Modification For example, the intermediate layer 50 may not have the stopper layer 51 and the adhesion layer 53. In this case, the seed layer 52 may be in contact with the second surface 302 of the first layer 30.

[0183] (Seventh Modification) For example, in the above-described example, the mask 20 includes the intermediate layer 50, but this is not limiting. The mask 20 does not have to include the intermediate layer 50. In this case, the metal layer 40 may be in contact with the second surface 302 of the first layer 30. Also, in this case, one end of the third opening 43 of the metal layer 40 may be closed by the first layer 30. Also, in this case, the heat dissipation promotion layer 60 may be in contact with the second surface 302 of the first layer 30. As a result, heat from the first layer 30 can be directly transferred to the heat dissipation promotion layer 60.

[0184] (Eighth Modification) For example, in the example described above, the fourth wall surface 55 of the intermediate layer 50 defines the boundary between the effective region 49 and the peripheral region 48, but this is not limited to this. The first wall surface 32 of the first layer 30 may define the boundary between the effective region 49 and the peripheral region 48. In this case, the fourth wall surface 55 of the intermediate layer 50 and the first wall surface 32 of the first layer 30 may overlap in a plan view. Alternatively, in this case, the mask 20 may not include the intermediate layer 50.

[0185] (Ninth Modification) For example, in the above-described examples, the planar shape of the third opening 43 or the recess 45 is a circle or a polygon, but is not limited thereto. The planar shape of the third opening 43 or the recess 45 may be any shape. For example, in a planar view, the third opening 43 or the recess 45 may extend linearly. In this case, the third opening 43 or the recess 45 may be linear or curved. In this case, in a planar view, the third opening 43 or the recess 45 may extend along the outline of a figure of any shape. For example, in a planar view, the third opening 43 or the recess 45 may extend along the outline of a circle or a polygon. In this case, in a planar view, the third opening 43 or the recess 45 may have a lattice or honeycomb shape.

[0186] (Tenth Modification) For example, in the example described above, the third opening 43 or the recess 45 is also formed in the region of the metal layer 40 that overlaps with the first opening 31 of the first layer 30 in a plan view, but this is not limiting. The third opening 43 or the recess 45 may be formed only in the region of the metal layer 40 that overlaps with the first layer 30. Furthermore, the third opening 43 or the recess 45 may be formed only in the region of the metal layer 40 that overlaps with the inner region 36 of the first layer 30.

[0187] (Eleventh Modification) For example, in the above-described example, the mask 20 includes the heat dissipation promotion layer 60, but this is not limiting. The mask 20 does not have to include the heat dissipation promotion layer 60. In other words, the heat dissipation promotion layer 60 does not have to be disposed in the third opening 43 or the recess 45 of the metal layer 40.

[0188] (Twelfth Modification) Fig. 32 is a diagram showing an example of an apparatus 200 including an organic device 100. The apparatus 200 includes a substrate 110 and an organic layer 130. The organic layer 130 is a layer formed by a vapor deposition method using a mask 20. The apparatus 200 is, for example, a smartphone. The apparatus 200 may also be a tablet terminal, a wearable terminal, or the like. The wearable terminal may be smart glasses, a head-mounted display, or the like.

[0189] It is also possible to combine the multiple components disclosed in the above-described embodiments and modifications as needed, or to delete some of the components disclosed in the above-described embodiments and modifications.

Claims

1. A mask comprising: a first layer including a first surface, a second surface located opposite the first surface, and at least one first opening penetrating from the first surface to the second surface; and a metal layer including a third surface facing the second surface, a fourth surface located opposite the third surface, and a plurality of second openings penetrating from the third surface to the fourth surface and overlapping the first opening in a planar view; wherein the first layer comprises silicon or a silicon compound; and the metal layer includes an effective region in which the plurality of second openings are formed, and a peripheral region surrounding the effective region; and the peripheral region has formed therein a recess recessed from the fourth surface toward the third surface or a third opening penetrating the metal layer.

2. The mask according to claim 1, wherein at least a portion of the recess or the third opening is formed at a position overlapping the first layer.

3. The mask according to claim 1, wherein the first layer includes a plurality of the first openings, and at least a portion of the recess or the third opening is formed in a position overlapping with an area between adjacent first openings in the first layer.

4. The mask according to claim 1, wherein at least a portion of the recess or the third opening is formed at a position overlapping the region between the outer edge of the first layer and the first opening.

5. The mask according to claim 1, wherein a recess recessed from the fourth surface toward the third surface is formed in the peripheral region, and at least a portion of the recess is formed in a position overlapping with the first opening.

6. The mask according to claim 1, further comprising an intermediate layer located between the second surface and the third surface and including a fourth opening overlapping the first opening, wherein the recess or the third opening is formed at a position overlapping the intermediate layer.

7. The mask according to claim 1, further comprising an intermediate layer located between said second surface and said third surface and including a fourth opening overlapping said first opening, wherein a third opening penetrating said metal layer is formed in said peripheral region, and at least a portion of said third opening is formed at a position overlapping said first opening and said intermediate layer.

8. The mask of claim 1, wherein silicon oxide or silicon nitride is disposed within the recess or the third opening.

9. A method for manufacturing an organic device, comprising the step of forming an organic layer on a substrate by a vapor deposition method using a mask according to any one of claims 1 to 8.

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