Heat dissipation device for semiconductor technology and projection exposure system comprising the heat dissipation assembly

Abstract

The invention relates to a heat dissipation device for use in a semiconductor technology system, comprising a planar component (31) and a heat sink (63) connected to the planar component (31). The planar component (31) is designed to reduce heat transfer from a heat source (22) located on one side of the planar component (31) to a region of the semiconductor technology system located on the other side of the planar component (31). According to the invention, the planar component (31) has at least one thermally conductive layer (62) which extends along the planar component (31) and is made of a material having anisotropic thermal conductivity, wherein the anisotropic thermal conductivity is more than 10 times greater along a surface extent of the thermally conductive layer (62) than along a direction perpendicular to the surface extent, wherein the thermally conductive layer (62) is vacuum-tightly shielded from surroundings of the planar component (31). The heat dissipation device allows very effective thermal shielding of the heat source, in particular when little installation space is available.

Description

Heat dissipation device for semiconductor technology and projection exposure system, comprising the heat dissipation arrangement

[0001] The present application claims priority from German patent application 10 2024 205 029 . 6, filed on 29 May 2024. The content of that German patent application is incorporated into the present application text by reference.

[0002] The present invention relates to a heat dissipation device for semiconductor technology and a microlithographic projection exposure system comprising the heat dissipation arrangement.

[0003] Microlithographic exposure systems, comprising an illumination system and a projection system, are used in semiconductor technology for the fabrication of microstructured components. Achieving high image quality depends not only on the quality of the individual optical elements of the projection system but also on their relative positions. To ensure these relative positions during operation of a projection exposure system, it is known to mount the individual optical elements of the projection system on a common support frame. The support frame and the optical elements are regularly actively temperature-controlled to reduce changes in the image quality of the projection system due to thermal expansion of the optical elements or the support structure. For example, the support frame and / or optical elements can be permeated by channels for a thermofluid.By passing thermofluid through these channels at a predetermined volume flow rate and / or temperature, the temperature can be controlled. The support frame and / or optical elements are kept relatively constant. These measures are intended to minimize deformations of the support frame and / or optical elements during operation.

[0004] Furthermore, actuators can be provided between the support frame and the individual optical elements, allowing the position of each optical element relative to the support frame to be readjusted. In this way, minor temperature changes and resulting deformations of the support frame or optical elements, which cannot be completely ruled out, can be compensated for.

[0005] Despite the possibilities for actively controlling the temperature of the optical elements or the support frame, as well as for readjusting the optical elements, image quality can deteriorate if the heat input into the projection system is too high. Increased heat input can originate particularly from the illumination system when using illumination radiation with very short wavelengths, as this radiation has higher energy and, moreover, a larger proportion of the energy tends to be absorbed by the optical elements of the illumination system. To reduce the heat input from the illumination system, it is generally known to place a wall element between the illumination system and the projection system for thermal shielding.

[0006] The object of the present invention is to provide a heat dissipation device for use in a semiconductor technology system that enables improved heat dissipation. This object is achieved by a heat dissipation device according to claim 1 and by a semiconductor technology system according to claim 2. 8. Advantageous embodiments are described in the dependent claims.

[0007] The invention relates to a heat dissipation device for use in a semiconductor technology system, comprising a flat component and a heat sink connected to the flat component. The flat component is designed to reduce heat transfer from a heat source located on one side of the flat component to an area of ​​the semiconductor technology system located on the other side of the flat component. The flat component has at least one thermally conductive layer extending along its surface, made of a material with anisotropic thermal conductivity, wherein the anisotropic thermal conductivity along a surface extension of the thermally conductive layer is more than 10 times greater than along a direction perpendicular to the surface extension, and wherein the thermally conductive layer is vacuum-tightly shielded from the surroundings of the flat component.

[0008] It was recognized that the material with anisotropic thermal conductivity enables particularly efficient heat dissipation along the thermal interface layer, while the low thermal conductivity perpendicular to the thermal interface layer effectively reduces heat transfer from the heat source to the component. It was further recognized that materials with anisotropic thermal conductivity, especially when operating in a vacuum or at low ambient pressure, can evaporate into the gas phase in small quantities, potentially leading to undesirable contamination of semiconductor technology equipment. The vacuum-tight shielding of the thermal interface layer prevents the anisotropic thermal conductivity material from evaporating into the environment. so that possible contamination of the semiconductor technology plant or the semiconductor products manufactured with the plant is prevented.

[0009] Finally, due to the use of a material with anisotropic thermal conductivity, effective heat dissipation can be achieved even when the surface component has a very low profile in a direction perpendicular to its surface area (i.e., along its thickness). The heat dissipation device can therefore be used particularly when there is little space between the heat source and the area to be shielded. Specifically, the heat can be conducted along the surface area of ​​the component from the confined space to the heat sink. The heat sink can thus be positioned away from the confined space where more room is available. This makes it possible to use a heat sink designed to absorb a large amount of heat.

[0010] The flat component typically has an outer surface which, when used in semiconductor technology systems, faces the heat source. The thermal conductivity layer can extend parallel or substantially parallel to the outer surface of the flat component.

[0011] The thermal conductivity layer is covered by a sealing material layer in one embodiment. This sealing material layer can have a high thermal conductivity, greater than 50 W / (mK), and in particular greater than 80 W / (mK). Due to this high thermal conductivity, heat is effectively transferred into the thermal conductivity layer and can then dissipate from there along the surface element to the surface located there. The heat is directed to a heat sink. The sealing material layer can also be designed to contribute to the structural stability of the surface component. The sealing material layer can, for example, be made of a metal, such as aluminum or stainless steel.

[0012] The anisotropic thermal conductivity can be more than 30 times, and in particular more than 60 times, greater along a surface extent of the heat-conducting layer than along a direction perpendicular to the surface extent. This further improves the ability of the heat dissipation device to conduct heat emitted by the heat source.

[0013] In one embodiment, the at least one thermally conductive layer comprises a plurality of thermally conductive layers. The plurality of thermally conductive layers can have a number between 2 and 100, in particular between 3 and 50, and further, in particular between 4 and 20. Furthermore, the surface component can have an intermediate layer between each pair of the plurality of thermally conductive layers. An intermediate layer can be configured to separate each pair of adjacent thermally conductive layers from one another. The thermally conductive layers can be oriented essentially parallel to each other. By using multiple thermally conductive layers, the amount of heat that can be dissipated along the surface can be increased, and the amount of heat conducted perpendicular to the surface (i.e., from the heat source towards the thermally shielded area of ​​the semiconductor technology system) can be reduced.The intermediate layers can further increase the structural stability of the surface component. The intermediate layers can exhibit high thermal conductivity, particularly greater than 50 W / (mK), and especially greater than 80 W / (mK). The intermediate layers can... They may contain or consist of a metal, such as aluminum or stainless steel. By providing multiple layers of thermally conductive coatings, both heat dissipation along the surface and heat shielding in a direction perpendicular to it are improved. If the surface component has multiple thermally conductive coatings, the outermost coatings, in particular, can be covered by a sealing layer.

[0014] The at least one thermally conductive layer can have a thickness between 0.01 mm and 5 mm, in particular between 0.03 mm and 2 mm. The thermal conductivity of the thermally conductive layer can be greater than 50 W / (mK) along its surface, in particular greater than 80 W / (mK), and further, in particular, greater than 120 W / (mK). The thermal conductivity perpendicular to the surface of the thermally conductive layer can be less than 10 W / (mK), in particular less than 5 W / (mK), and further, in particular, less than 3 W / (mK).

[0015] In one embodiment, the thermally conductive layer is made of a graphite layer with a purity of more than 85%, particularly more than 90%, and further, particularly more than 95%. It has been shown that graphite layers exhibit a particularly high anisotropy of thermal conductivity. The thermally conductive layer can also have an area between 0.05 m². 2 and 2 m 2lies, preferably between 0.1 m 2 and 1 m 2 .

[0016] The invention further relates to a semiconductor technology system comprising a heat source, an area to be thermally shielded from the heat source, and a heat dissipation device according to the invention. The surface component of the heat dissipation device is positioned between the heat source and the area to be thermally shielded such that a Heat transfer from the heat source to the area to be thermally shielded is reduced. The semiconductor technology system can be further developed by additional features already described in connection with the heat dissipation device according to the invention.

[0017] The semiconductor technology system is, in one embodiment, a projection exposure system for microlithography. The projection exposure system can comprise an illumination system and a projection system, wherein the projection system can include an object field and optical elements for imaging the object field onto an image plane. The illumination system can be configured to illuminate the object field, wherein the heat source is formed by at least a part of the illumination system, and wherein the projection system comprises the area to be shielded from the heat source.

[0018] Furthermore, the surface component can be arranged in a transition zone between a final beam section of the lighting system and a first beam section of the projection system. In one embodiment, the surface component extends beyond the transition zone and is in thermal contact with the heat sink in an area outside the transition zone.

[0019] A lighting system typically comprises a plurality of optical elements with which a suitable illumination beam path is generated to illuminate the object field of the projection system. The last beam segment of the lighting system can denote the part of the beam path that lies between the object plane and the optical element of the lighting system immediately in front of the object plane in the beam path. Alternatively, the last The beam section of the illumination system refers to the part of the beam path located between the object plane and the last faceted mirror of the illumination system in the beam path. In this case, further optical elements may be arranged between the last faceted mirror and the object plane without affecting the definition of the last beam section. The first beam section of the projection system refers to the part of the beam path located between the object plane and the optical element of the projection system immediately downstream of the object plane in the beam path. The region between the last beam section of the illumination system and the first beam section of the projection system is also referred to here as the transition region.In the transition zone between the lighting system and the projection system, space is often limited, as the final beam segment of the lighting system typically strikes the object plane (or a photomask positioned there, for example) at an acute angle and is reflected. Since the surface component of the heat dissipation device can be designed to be very space-saving and thin, it is particularly suitable for positioning in the transition zone to effectively dissipate heat and keep it away from the projection system.

[0020] The surface component can extend beyond the transition zone and be in thermal contact with the heat sink in an area outside the transition zone. The heat sink can be configured for active cooling. In particular, the heat sink can include one or more cooling channels for supplying a thermal fluid. Significantly more installation space is usually available outside the transition zone, allowing for the placement of an actively cooled heat sink there.

[0021] In one embodiment, a passive shielding element can be arranged between the projection system and the lighting system. The surface component can be located adjacent to the passive shielding element or can replace part of it. The passive shielding element can be located at least partially within the aforementioned transition area. It can have a recess through which the beam path can pass to transition from the lighting system to the projection system. The term "passive shielding element" refers to a component that passively reduces the transfer of radiant heat from the lighting system to the projection system (i.e., without active cooling using cooling channels). The passive shielding element can have a surface area that is significantly larger than its thickness measured perpendicular to this area.The passive shielding element can be designed, in particular, as a sheet metal part and may be made of, for example, aluminum or stainless steel. The wall thickness of the passive shielding element can be between 0.2 mm and 15 mm, in particular between 0.5 mm and 4 mm.

[0022] In the transition area between the illumination system and the projection system, space is typically limited, as the final beam segment of the illumination system usually strikes the object plane (or a photomask positioned there, for example) at an acute angle and is reflected. Accordingly, the passive shielding element can be designed with a thin material thickness for space reasons. Since a vacuum or very low pressure is typically created within the projection exposure system during operation, it was previously assumed that a thin-walled passive shielding element would suffice. The aim is to sufficiently reduce the heat transfer mode of thermal radiation, which prevails under these pressure conditions, so that high image quality can be ensured, if necessary with the aid of the compensation means present in the projection system (i.e., with the aid of active temperature control of the optical elements or the support frame, as well as adjustment of the optical elements). However, it has been recognized that, particularly when using very short wavelengths, under certain circumstances the rate of change of the heat flux from the illumination system to the projection system can increase to such an extent that the compensation means present in the projection system can no longer counteract it sufficiently.Furthermore, it was recognized that the rate of change of the heat flux can be significantly reduced by positioning a surface component in the transition region between the beam path and the passive shielding element, extending along the passive shielding element. In particular, due to its orientation along the shielding element, this surface component can effectively absorb heat and dissipate it along its surface area to a region outside the transition zone, up to the heat sink. This significantly reduces the rate of change of the heat flux. In this way, the time constant of the heat transfer can be increased to such an extent that potential positional changes of the optical elements can be adequately counteracted by means of active temperature control or readjustment of the optical element positions.

[0023] The surface component is positioned in one configuration on the side of the passive shielding surface element facing the projection system. Heat radiation emanating from the passive shielding surface element can then be effectively absorbed by the surface. The heat is absorbed and dissipated by the component to reduce heat input into the optical elements of the projection system. In an alternative embodiment, the surface component can also be positioned on the side of the passive shielding surface element facing the illumination system. In this case, the heat input into the passive shielding surface element can be reduced, thereby also reducing the rate of change of the heat flow. It is possible to retrofit an existing projection illumination system by providing a heat dissipation device according to the present invention.

[0024] It is generally possible for at least one thermally conductive layer to be formed from a single piece of material that extends beyond the transition zone and is in thermal contact with a heat sink in an area outside the transition zone. However, it is also possible for the thermally conductive layer to have several separate sections positioned side by side within a surface, which are in thermal contact with each other. In this case, several sections can be combined to form a larger thermally conductive layer. Thermal contact between two sections can be achieved using a material with high thermal conductivity, which can be greater than 50 W / (mK) and, in particular, more than 100 W / (mK).

[0025] It has been shown that heat can be extracted very effectively from the transition zone due to its anisotropic thermal conductivity and dissipated via the heat sink. The heat-conducting layer can extend laterally beyond the transition zone. "Laterally" here refers to a direction along the surface area that is essentially perpendicular to the propagation direction of the last beam segment of the lighting system. It is also possible that the heat-conducting layer extends beyond the transition area in a direction away from the object field of the lighting system.

[0026] An outer surface of the surface component can be oriented essentially parallel to the passive shielding element, and in particular, a contour of the outer surface can be adapted to a contour of the passive shielding element. This allows for efficient use of the available space and effective absorption and dissipation of heat, thus effectively reducing changes in heat flow. The outer surface of the surface component can have an area between 100 cm². 2 and 5000 cm 2 , especially between 600cm 2 and 1000 cm 2 The thickness of the surface component (measured perpendicular to the outer surface) can be between 0.4 cm and 5 cm, in particular between 0.8 cm and 3 cm.

[0027] The invention is described below by way of example with reference to the accompanying drawings and advantageous embodiments. The drawings show: Fig. 1: an embodiment of a projection exposure system according to the invention; Fig. 2: an enlarged section of figure 1; Fig. 3: a side view of some of the elements shown in Figure 2; Fig. 4: a sectional view along line BB shown in Figure 3.

[0028] Figure 1 schematically illustrates a microlithographic EUV projection exposure system according to the invention. The projection exposure system represents a semiconductor technology system as defined in this disclosure. The projection exposure system comprises an exposure beam source 14, an illumination system 10, and a projection system 22, which are operated together in a vacuum chamber 23.

[0029] The exposure source 14 generates electromagnetic radiation in the EUV range, specifically with a wavelength between 5 nm and 30 nm. The exposure radiation emitted by the exposure source 14 is focused by a collector 15 into an intermediate focal plane 16. Exposure radiation passing from the intermediate focal plane 16 is directed by the illumination system 10 into an object plane 12, so that an object field in the object plane 12 is illuminated with uniform radiation intensity.

[0030] The illumination system 10 comprises a deflecting mirror 17, which deflects the illumination radiation onto a first faceted mirror 18. A second faceted mirror 19 is arranged downstream of the first faceted mirror 18. The facets of the first faceted mirror 18 are imaged onto the object plane 12 by the second faceted mirror 19. The portion of the beam path located between the faceted mirror 19 and the object field is also referred to here as the final beam segment of the illumination system 10.

[0031] In the object plane 12, a photomask 13 is arranged, which is imaged onto an image plane 21 via a plurality of mirrors M1-M6 of the projection system 22. The part of the beam path located between the object field and the first mirror M1 of the projection system 22 is also referred to here as the first beam section of the projection system 22.

[0032] A structure formed on the photomask 13 is transferred to a radiation-sensitive layer of a wafer 20 arranged in the image plane 21 by means of mirrors M1-M6. The photomask 13 is suspended from a first scanning device 24, and the wafer 20 rests on a second scanning device 25, so that the wafer 20 can be exposed in a single scanning operation in which the photomask 13 and the wafer 20 are moved synchronously. The photomask 13 can have an aspect ratio between 1:1 and 1:3, preferably between 1:1 and 1:2, and particularly preferably 1:1 or 1:2. The photomask 13 can be substantially rectangular. The photomask 13 can preferably be 5 to 7 inches long and wide, and particularly preferably 6 inches long and wide. Alternatively, the photomask can be 5 to 7 inches long and 10 to 14 inches wide, preferably 6 inches long and 12 inches wide.

[0033] In the example shown in Figure 1, the projection system 22 comprises six mirrors M1-M6. Alternatives with four, eight, ten, twelve, or any other number of mirrors are also possible. The penultimate mirror M5 and the last mirror M6 each have an aperture for the illumination radiation, making the projection system 22 a doubly obscured optical system. The projection system 22 has an image-side numerical aperture greater than 0.3, and which can also be greater than 0.6, for example, 0.7 or 0.75.

[0034] The projection system 22 can in particular be anamorphic, i.e. it has in particular different image scales β. x , ß y in the x and y directions. The two image scales ß x , ß y of the projection system 20 are preferably located at (ß x , ß y) = ( + / - 0.25, / + - 0.125) . A magnification β of 0.25 corresponds to a reduction in the ratio of 4:1, while a magnification β of A reduction of 0.125 results in a reduction ratio of 8:1. A positive sign for the image scale β indicates a transformation without image inversion, a negative sign indicates a transformation with image inversion.

[0035] The reflective surfaces of mirrors M1-M6 can be designed as free-form surfaces without an axis of rotational symmetry. Mirrors M1-M6, like the mirrors of the lighting system 10, can have reflective coatings for the illumination radiation. These reflective coatings can be designed as multilayer coatings, in particular with alternating layers of molybdenum and silicon. Despite the highly reflective coatings of the mirrors, a considerable proportion (e.g., 30%) of the illumination radiation is absorbed by the mirrors and converted into heat. This leads, in particular, to a high heat input into mirrors 17, 18, and 19 of the lighting system. The mirrors therefore constitute heat sources.To prevent this heat from passing unhindered into the projection system 22, a wall element 28, indicated only schematically by a dashed line in Figure 1, is provided between the lighting system 10 and the projection system 22, which serves for thermal shielding.

[0036] Figure 2 shows an enlarged section of Figure 1, with the wall element 28 depicted in a schematic cross-section and in greater detail. In this view, it can be seen that the wall element 28 has a lower wall section 29 and a passive shielding element 30 attached to it. The shielding element 30 is arranged between the last beam section 41 of the illumination system 10 and the first beam section 42 of the projection system and has a recess 40 through which the beam path can pass. A transition zone, as described in this disclosure, is formed between the beam sections 41 and 42. The installation space is limited in the transition zone because the beam path strikes the photomask 13 at an acute angle and is reflected. A minimum distance between the mirror M1 and an edge of the last beam section 41 (measured perpendicular to the shielding element 30) is approximately 50 mm. Since the beam sections 41 and 42 taper towards the object plane 12, this distance decreases towards the object plane 12. The passive shielding element 30 has a thin material thickness of 4 mm. The passive shielding element 30 is made of aluminum.

[0037] On the side of the passive shielding element 30 facing the projection system 22, there is a surface component 31 of a heat dissipation device according to the invention. The surface component 31 is attached to the shielding element 30. An outer surface of the surface component 31 is in contact with a corresponding counter surface of the passive shielding element 30. The surface component 31 has an area of ​​approximately 800 cm². 2 on . The thickness of the surface component 31, measured perpendicular to the surface component, is approximately 6.1 mm.

[0038] Figure 3 shows a side view of the side of the wall element 28 of the embodiment shown in Figure 1 that faces the projection system 22. In this view, it can be seen that the surface component 31 projects laterally beyond the passive shielding surface element 30 and beyond the transition area formed between the beam sections 41 and 42 shown in Figure 2. The lateral extension is perpendicular to the plane of the drawing in Figure 2 and along line BB in Figure 3. At its lateral ends, the surface component 31' is connected to a heat sink 63. Heat sinks 63 have cooling channels through which a thermofluid flows. The surface component 31 has a plurality of heat-conducting layers not shown in Figure 3, which are explained in more detail in connection with Figure 4.

[0039] Figure 4 shows a schematic sectional view along line BB shown in Figure 3. This view reveals that the surface component 31 has a total of five thermally conductive layers 62, with an intermediate layer 64 located between each pair of adjacent thermally conductive layers 62. The thermally conductive layers 62 are graphite layers with a purity of 97% and a thickness of 0.5 mm. The thermal conductivity of the graphite layers along their surface extent is 140 W / (mK) and along a direction perpendicular to it is 2 W / (mK). The intermediate layers 64 are made of aluminum and have a thickness of 0.4 mm.

[0040] The thermally conductive layer 62 located at the top and the thermally conductive layer 62 located at the bottom of Figure 4 are each covered by a protective layer 65. The upper protective layer 65 is oriented towards the passive shielding surface element 30 and forms an outer surface 32 of the surface component 31. The protective layers 65 encapsulate the thermally conductive layers 62 from the environment in a vacuum-tight manner. If a vacuum or very low pressure prevails in the vicinity of the surface component 31 during operation, the protective layers 65 prevent carbon atoms from detaching from the graphite layer 62 and contaminating the projection exposure system. At their lateral end regions, the graphite layers 62 are vacuum-tightly connected to the respective heat sinks 63. Alternatively, it is also possible that the heat-conducting layers 62 are also vacuum-tightly connected at their lateral end regions to a protective layer not shown in Figure 4, which is preferably thermally conductive in order to thermally connect the heat-conducting layers 62 to the heat sinks 63. The graphite layers 62 have further end regions that delimit the graphite layers along a direction perpendicular to the plane of Figure 4. These further end regions are also covered by vacuum-tight protective layers.

[0041] The protective layer 65 is also made of aluminum and has a thickness of approximately 1 mm. Both the intermediate layers 64 and the protective layers provide stability to the surface component 31. The surface component 31 has a total thickness of only 6.1 mm and can therefore be used even in very confined spaces.

Claims

Claims 1. Heat dissipation device for use in a semiconductor technology system, comprising a surface component (31) and a heat sink (63) connected to the surface component (31), wherein the surface component (31) is configured to reduce heat transfer from a heat source located on one side of the surface component (31) to an area of ​​the semiconductor technology system located on the other side of the surface component (31), characterized in that the surface component (31) has at least one thermally conductive layer (62) extending along the surface component (31) made of a material with anisotropic thermal conductivity, wherein the anisotropic thermal conductivity along a surface extension of the thermally conductive layer (62) is more than 10 times greater than along a direction perpendicular to the surface extension, wherein the thermally conductive layer (62) is vacuum-tightly shielded from the surroundings of the surface component (31).wherein at least one thermal conducting layer (62) comprises a plurality of thermal conducting layers (62).

2. Heat dissipation device according to claim 1, wherein the heat-conducting layer is covered by a sealing material layer.

3. Heat dissipation device according to claim 2, wherein the sealing material layer has a thermal conductivity of more than 50 W / (mK).

4. Heat dissipation device according to one of claims 1 to 3, wherein the anisotropic thermal conductivity along a surface extent of the heat-conducting layer (62) is more than 30- is times greater than along a direction perpendicular to the area extent.

5. Heat dissipation device according to claim 1, in which a heat-conducting intermediate layer (64) is arranged between each two of the plurality of heat-conducting layers (62).

6. Heat dissipation device according to one of claims 1 to 5, wherein the at least one heat-conducting layer (62) has at least one of the following features: - the thickness of the thermal conductivity layer (62) is between 0.01 mm and 5 mm, - a thermal conductivity of the heat-conducting layer (62) along the surface area is more than 50 W / (mK) , - a thermal conductivity perpendicular to the surface area of ​​the thermal conducting layer (62) is less than 10 W / (mK) , - the thermal conductivity layer (62) is made of a graphite layer with a purity of more than 85%, - the heat-conducting layer (62) has an area between 0.05 m 2 and 2 m 2 lies, preferably between 0.1 m 2 and 1 m 2 .

7. Semiconductor technology system comprising a heat source, a thermally shielded area from the heat source, and a heat dissipation device according to one of claims 1 to 6, wherein the surface component (31) of the heat dissipation device is positioned between the heat source and the area to be thermally shielded in such a way that heat transfer from the heat source to the area to be thermally shielded is reduced.

8. The system according to claim 7, which is configured as a projection exposure system for microlithography, comprising an illumination system (10) and a projection system (22), wherein the projection system (22) has an object field and optical elements (M1 - M6) for imaging the object field into an image plane (21), wherein the illumination system (10) is configured to illuminate the object field, wherein the heat source is formed by at least a part of the illumination system (10), and wherein the projection system (22) comprises the area to be shielded from the heat source.

9. System according to claim 8, wherein the surface component (31) is arranged in a transition area between a last beam section (41) of the lighting system (10) and a first beam section (42) of the projection system (22).

10. System according to claim 9, wherein the surface component (31) extends beyond the transition area and is in thermal contact with the heat sink (63) in an area outside the transition area.

11. System according to one of claims 8 to 10, in which a passive shielding surface element (30) is arranged between the projection system (22) and the lighting system (10), wherein the surface component (31) is adjacent to the passive shielding element.

12. System according to any one of claims 8 to 10, wherein a passive shielding element (30) is arranged between the projection system (22) and the lighting system (10), wherein the surface component (31) replaces a part of the passive shielding element (30).

13. System according to claim 11 or 12, wherein an outer surface (32) of the surface component (31) is preferably aligned substantially parallel to the passive shielding surface element (30).

14. System according to claim 13, wherein a contour of the outer surface (32) is adapted to a contour of the passive shielding surface element (30).

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