Quartz support member, semiconductor process chamber and semiconductor process method

Abstract

Provided in the present invention are a quartz support member, a semiconductor process chamber and a semiconductor process method. The quartz support member comprises a lens structure having a central lens and an annular lens, and a support structure, wherein the lens structure is placed on the support structure. In the present invention, by means of providing a wafer base on the quartz support member containing the lens structure, the lens structure containing the central lens and the annular lens is arranged to refract heating light, adjust annular uneven radiation heat distribution caused by a heating light tube, a reflective gold plate and a cavity structure, optimize the adjustment accuracy of heating uniformity, and improve the thickness of an epitaxial layer and the uniformity of resistivity obtained after a heating process. In addition, by means of providing the lens structure and the support structure as an integrally formed structure, floating dust particles introduced by the quartz support member are reduced, and the product yield is improved. Finally, by means of a support block and a quartz block which are adjustable in terms of stacking sequence, the height of the lens structure can be flexibly adjusted, thereby further improving the adjustment accuracy of the heating uniformity.

Description

A quartz support, a semiconductor process chamber, and a semiconductor process method Technical Field

[0001] This invention belongs to the field of semiconductor integrated circuit manufacturing technology, and in particular relates to a quartz support, a semiconductor process chamber, and a semiconductor process method. Background Technology

[0002] In existing technologies, for homogeneous single-crystal epitaxial processes on large-size silicon wafers, thickness uniformity and resistivity uniformity have always been the main directions for quality improvement. However, due to the inherent distribution characteristics of heating lamps, reflective gold plates, and cavity structures, a non-uniform heating radiation distribution in concentric rings is formed during the heating steps of the epitaxial process. Currently, common methods involve optimizing the gas flow characteristics of carrier gas, dopant gas, trichlorosilane (TCS), etc., as well as the gas path structure and cavity structure to change the distribution of reactive gases, or optimizing the power distribution of heating lamps and the design of heat-reflective gold plates to influence the heating temperature distribution.

[0003] However, the cavity structure size, gas path structure, heating lamp tube and heat reflector plate of epitaxial process are all limited by the original design and safety characteristics of epitaxial process equipment. There is only a certain amount of room for adjustment, which is far from meeting the uniformity requirements of current high-end products for epitaxial process.

[0004] Therefore, there is an urgent need for a process structure that can significantly improve the uniformity of epitaxial processes without being limited by the original design of process equipment.

[0005] It should be noted that the above introduction to the technical background is only for the purpose of providing a clear and complete explanation of the technical solutions of this application and facilitating the understanding of those skilled in the art. It should not be assumed that the above technical solutions are known to those skilled in the art simply because these solutions have been described in the background section of this application. Summary of the Invention

[0006] In view of the shortcomings of the prior art, the purpose of this invention is to provide a quartz support, a semiconductor process chamber, and a semiconductor process method to solve the problems of uniformity of process temperature distribution and uniformity of epitaxial layer thickness distribution in the prior art.

[0007] To achieve the above objectives, the present invention provides a quartz support member, which includes a lens structure and a support structure;

[0008] The lens structure includes a central lens and at least one ring lens, the ring lens surrounds the central lens, the shortest distance between the ring lens and the central lens is a first preset distance, the central lens is a concave lens or a convex lens, and the ring lens is a concave lens and / or a convex lens; the lens structure is placed on the support structure, the support structure is used to support the lens structure and the wafer substrate placed above the support structure.

[0009] Optionally, when the lens structure includes one ring lens, the central lens is a concave lens with a diameter of 20 mm to 80 mm; the ring lens is a convex or concave lens with an inner diameter of 40 mm to 100 mm and an outer diameter of 90 mm to 140 mm, and the distance between the midpoint between the inner and outer edges of the ring lens and the central axis of the ring lens is half the inner diameter of the support ring.

[0010] Optionally, when the lens structure includes two ring lenses, the central lens is a concave lens with a radius of 20 mm to 40 mm; the first ring lens closer to the central lens is a convex lens with an inner diameter of 30 mm to 50 mm, an outer diameter of 50 mm to 80 mm, and a distance of 40 mm to 65 mm between the midpoint between the inner and outer edges of the first ring lens and the central axis of the ring lens; the second ring lens farther from the central lens is a concave lens with an inner diameter of 70 mm to 90 mm, an outer diameter of 120 mm to 150 mm, and a distance of 95 mm to 120 mm between the midpoint between the inner and outer edges of the second ring lens and the midpoint between the inner and outer edges of the ring lens closer to the central lens.

[0011] Optionally, the support structure includes a support rod and a support ring, and the annular lens and the central lens are connected by the support rod; when the lens structure includes two or more annular lenses, adjacent annular lenses are connected by the support rod; the support ring surrounds the outermost annular lens, the shortest distance between the outermost annular lens and the support ring is a second preset distance, the outermost annular lens and the support ring are connected by the support rod, and the thickness of the support ring is greater than or equal to the thickness of the lens structure.

[0012] Optionally, the lens structure and the support structure are integrally formed.

[0013] Optionally, the quartz support further includes an upper support frame, which is a support ring surface obtained by extending the support ring upward along the direction of the central axis of the support ring; and / or the quartz support further includes a lower support frame, which is a support ring surface obtained by extending the support ring downward along the direction of the central axis of the support ring.

[0014] Optionally, the support structure is a quartz block, and the lens structure is formed by the concave, convex and / or planar surfaces of the top and / or bottom surfaces of the quartz block, and the lens structure and the support structure are integrally formed.

[0015] Optionally, the support structure further includes at least one support block, which is stacked with the quartz block in a preset order so that the lens structure is located at a preset height.

[0016] The present invention also provides a semiconductor process chamber, the semiconductor process chamber including any of the quartz support members described above, the semiconductor process chamber further including a wafer base, the wafer base being used to place a wafer to be processed, the wafer base being placed on the quartz support member.

[0017] The present invention also provides a semiconductor process method, wherein the semiconductor process method uses the above-described semiconductor process chamber to perform the heating step in the semiconductor process.

[0018] As described above, the quartz support, semiconductor process chamber, and semiconductor process method of the present invention have the following beneficial effects:

[0019] This invention refracts heating light by setting the wafer base on a quartz support containing a lens structure, which includes a central lens and a ring lens. This adjusts the annular uneven distribution of radiant heat caused by the heating lamp, reflective gold plate, and cavity structure, optimizes the adjustment accuracy of heating uniformity, and improves the uniformity of the epitaxial layer thickness and resistivity obtained after the heating process.

[0020] This invention reduces dust particles from the quartz support component and improves product yield by integrating the lens structure and support structure into a single molded structure.

[0021] This invention, by setting up support blocks and quartz blocks whose stacking order can be adjusted, allows for flexible adjustment of the height of the lens structure, further improving the accuracy of adjusting the heating uniformity. Attached Figure Description

[0022] Figure 1 shows a side sectional view of the quartz support in Embodiment 1 of the present invention.

[0023] Figure 2 shows a top view of the quartz support in Embodiment 1 of the present invention.

[0024] Figure 3 shows the distribution of epitaxial layer thickness at different diameter locations on a silicon wafer in the prior art.

[0025] Figure 4 shows a top view of a quartz support in an optional example of Embodiment 1 of the present invention.

[0026] Figure 5 shows a side sectional view of the quartz support in Embodiment 2 of the present invention.

[0027] Figure 6 shows a side sectional view of the quartz support in an example of Embodiment 2 of the present invention.

[0028] Figure 7 shows a side sectional view of the quartz support in an example of Embodiment 2 of the present invention.

[0029] Figure 8 shows a side cross-sectional view of a semiconductor process chamber in an example of Embodiment 3 of the present invention.

[0030] Figure 9 shows a side cross-sectional view of a semiconductor process chamber in an example of Embodiment 3 of the present invention.

[0031] Component labeling descriptions: 10. Lens structure; 11. Central lens; 12. Ring lens; 20. Support structure; 21. Support rod; 22. Support ring; 23. Upper support frame; 24. Lower support frame; 25. Support bottom surface; 26. Bottom surface support frame; 27. Quartz block; 28. Support block; 31. Wafer base; 32. Wafer to be processed; 33. Heating lamp assembly; 34. Heating light. Detailed Implementation

[0032] The following specific examples illustrate the implementation of the present invention. Those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. The present invention can also be implemented or applied through other different specific embodiments, and various details in this specification can also be modified or changed based on different viewpoints and applications without departing from the spirit of the present invention.

[0033] In the detailed description of embodiments of the present invention, for ease of explanation, the schematic diagrams illustrating the device structure may be partially enlarged without adhering to the general scale, and the schematic diagrams are merely examples and should not limit the scope of protection of the present invention. Furthermore, in actual manufacturing, the three-dimensional spatial dimensions of length, width, and depth should be included.

[0034] For ease of description, spatial relation terms such as “below,” “under,” “lower than,” “below,” “above,” and “upper” may be used herein to describe the relationship between one element or feature shown in the accompanying drawings and other elements or features. It will be understood that these spatial relation terms are intended to include directions other than those depicted in the accompanying drawings for devices in use or operation.

[0035] In the context of this application, the structure described above the first feature may include embodiments in which the first and second features are in direct contact, or embodiments in which additional features are formed between the first and second features, such that the first and second features may not be in direct contact.

[0036] It should be noted that the illustrations provided in this embodiment are only schematic representations of the basic concept of the present invention. Therefore, the illustrations only show the components related to the present invention and are not drawn according to the actual number, shape and size of the components in the actual implementation. In the actual implementation, the form, quantity and proportion of each component can be arbitrarily changed, and the layout of the components may also be more complex.

[0037] Example 1

[0038] This embodiment provides a quartz support member. Figure 1 shows a side sectional view of the quartz support member, and its sectional line is AA in Figure 2. Figure 2 shows a top view of the quartz support member. The quartz support member includes a lens structure 10 and a support structure 20.

[0039] The lens structure 10 includes a central lens 11 and at least one annular lens 12, the annular lens 12 surrounding the central lens 11, the shortest distance between the annular lens 12 and the central lens 11 being a first preset distance, the central lens 11 being a concave lens or a convex lens, and the annular lens 12 being a concave lens and / or a convex lens; the lens structure 10 is placed on the support structure 20, the support structure 20 being used to support the lens structure 10 and the wafer substrate 31 placed above the support structure 20.

[0040] Specifically, the wafer base 31 is used to place the wafer 32 to be processed.

[0041] In existing technologies, as shown in Figure 3, the distribution of epitaxial layer thickness at different diameter positions on a silicon wafer reveals a non-uniform thickness distribution in concentric rings, exhibiting poor uniformity. The uniformity of thickness and resistivity during epitaxial processing on silicon wafers is a key area for improvement, as it significantly impacts the yield and parameter reliability of the final device. This non-uniform thickness distribution is due to the inherent ring-shaped distribution structure of the heating lamp, reflective gold plate, and cavity structure, resulting in a ring-shaped distribution of varying intensity of the heating light radiation. This leads to uneven thickness distribution of the epitaxial layer at different diameter positions. Existing improvement methods typically address this by designing gas flow characteristics, cavity structure dimensions, and gas path structure to improve gas distribution, or by designing features of the heating lamp or heat-reflective gold plate to improve the heating field distribution. However, these improvement methods are limited by the original design and safety features of the epitaxial process equipment, which limits the room for improvement in the uniformity of epitaxial layer thickness and resistivity. Moreover, the original design itself is a source of uneven distribution, and structural improvements will bring new uneven distributions due to structural changes, making it difficult to meet the current higher requirements for uniformity.

[0042] This invention uses a quartz support as the support for the wafer base 31. Utilizing the light transmittance and achievable refractive properties of quartz, a novel lens structure 10, including a central lens 11 and a ring lens 12, is incorporated into the quartz support. This allows for the dispersion or convergence of the heating light 34, which heats the bottom of the wafer in a ring-shaped distribution. This adjustment of the radiant heat distribution reduces the annular thickness non-uniformity caused by the heating lamp, reflective gold plate, and cavity structure, resulting in better thickness and resistivity uniformity in the epitaxial process. Furthermore, since this annular non-uniformity is a significant factor affecting the uniformity of the epitaxial process, this invention achieves significantly higher uniformity than other solutions. The uniformity is significantly improved. Furthermore, since the quartz support is not part of the heating or gas path components in the original epitaxial process, it is not limited by the original design of the epitaxial process equipment, thus allowing for more flexible adjustments. This further avoids the formation of new non-uniform distributions during the adjustment process due to the annular non-uniform distribution of heating lamps, reflective gold plates, cavity structures, etc., and precisely achieves an improvement in the uniformity of epitaxial layer thickness and resistivity. Experiments have shown that using the quartz support of this invention for epitaxial processes can reduce the uniformity parameter of the obtained epitaxial layer thickness from around 1% to below 0.5%, and the maximum value of the SFQR (local flatness parameter) of the epitaxial layer can be below 15 nanometers or 10 nanometers, demonstrating a significant improvement in uniformity. Specifically, the uniformity parameter = (thickest epitaxial layer thickness - thinnest epitaxial layer thickness) / average epitaxial layer thickness. The smaller the uniformity parameter, the better the uniformity. The definition of SFQR is: first, determine a unit of arbitrary size on the surface to be measured. When the surface obtained by the least squares method for this unit surface is the reference surface, the sum of the maximum positive deviation and the maximum negative deviation calculated from this reference surface is the SFQR. The smaller the SFQR, the better the uniformity.

[0043] Specifically, the concave lens in the lens structure 10 can be a single-sided concave lens, a double-spherical concave lens, or a concave-convex lens with the concave surface facing upwards, and the convex lens in the lens structure 10 can be a single-sided convex lens, a double-spherical convex lens, or a concave-convex lens with the convex surface facing upwards.

[0044] In one embodiment, the area between the annular lens 12 and the central lens 11 is not provided with a lens structure 10 and does not have a refractive effect on the heating light 34. Therefore, by setting the first preset distance between the annular lens 12 and the central lens 11, the size and position of the area where the direction of the heating light 34 is not adjusted can be determined, so as to achieve the required distribution of the heating light 34 radiation.

[0045] In one embodiment, a flat lens is provided in the area between the annular lens 12 and the central lens 11, so as not to refract the heating light 34.

[0046] In one embodiment, the convex lens in the lens structure 10 has a center thickness of 3 mm to 8 mm and an edge thickness of 1 mm to 5 mm; the concave lens in the lens structure 10 has a center thickness of 1 mm to 5 mm and an edge thickness of 3 mm to 8 mm.

[0047] In one embodiment, as shown in FIG1, the central lens 11 is a double-sided concave spherical lens with a center thickness of 2 mm and an edge thickness of 6 mm; the annular lens 12 is a convex spherical lens with a center thickness of 6 mm and an edge thickness of 1 mm.

[0048] In one embodiment, as shown in FIG2, the quartz support includes a ring lens 12, the central lens 11 is a concave lens with a diameter of 20 mm-80 mm; the ring lens 12 is a convex lens with an inner diameter of 40 mm-100 mm and an outer diameter of 90 mm-140 mm, and the distance between the midpoint between the inner edge and the outer edge of the ring lens 12 and the central axis of the ring lens 12 is half the inner diameter of the support ring 22.

[0049] In one embodiment, the quartz support includes a ring lens 12, the central lens 11 is a double-spherical concave lens with a radius of 20 mm, a center thickness of 2 mm, and an edge thickness of 5 mm; the ring lens 12 is a double-spherical concave lens with an inner diameter of 70 mm, an outer diameter of 120 mm, a center thickness of 2 mm, and an edge thickness of 7 mm; the distance between the lens structure 10 and the bottom of the wafer substrate 31 is 11 mm.

[0050] In one embodiment, as shown in FIG. 4, when the lens structure 10 includes two ring lenses 12, the central lens 11 is a concave lens with a radius of 20 mm-40 mm; the ring lenses 12 near the central lens 11 are convex lenses with an inner diameter of 30 mm-50 mm and an outer diameter of 50 mm-80 mm. The distance between the midpoint of the inner and outer edges of the ring lens 12 near the central lens 11 and the central axis of the ring lens 12 is... The distance between the inner and outer edges of the ring lens 12 is 40 mm to 65 mm. The outer diameter of the ring lens 12, which is farther from the central lens 11, is 70 mm to 90 mm. The outer diameter of the ring lens 12, which is farther from the central lens 11, is 120 mm to 150 mm. The distance between the midpoint between the inner and outer edges of the ring lens 12, which is farther from the central lens 11, and the midpoint between the inner and outer edges of the ring lens 12, which is closer to the central lens 11, is 95 mm to 120 mm.

[0051] In one embodiment, the quartz support includes two annular lenses 12. The central lens 11 is a double-spherical concave lens with a radius of 20 mm, a center thickness of 2 mm, and an edge thickness of 5 mm. The annular lens 12 furthest from the central lens 11 is a double-spherical concave lens with an inner diameter of 70 mm, an outer diameter of 120 mm, a center thickness of 2 mm, and an edge thickness of 7 mm. The annular lens 12 closest to the central lens 11 is a double-spherical convex lens with an inner diameter of 30 mm, an outer diameter of 50 mm, a center thickness of 5 mm, and an edge thickness of 1 mm. The distance between the lens structure 10 and the bottom of the wafer substrate 31 is 11 mm.

[0052] In this embodiment, as shown in Figures 1-2, the support structure 20 includes a support rod 21 and a support ring 22. The annular lens 12 and the central lens 11 are connected by the support rod 21. When the lens structure 10 includes two or more annular lenses 12, adjacent annular lenses 12 are connected by the support rod 21. The support ring 22 surrounds the outermost annular lens 12, and the shortest distance between the outermost annular lens 12 and the support ring 22 is a second preset distance. The outermost annular lens 12 and the support ring 22 are connected by the support rod 21. The thickness of the support ring 22 is greater than or equal to the thickness of the lens structure 10.

[0053] The present invention supports and connects the lens structure 10 by setting a support rod 21 and a support ring 22, thereby making the lens structure 10 more stable, the adjustment effect of the heating light 34 more precise, and thus achieving better epitaxial process uniformity.

[0054] Specifically, the area between the outermost ring lens 12 and the support ring 22 does not have a lens structure 10 and does not have a refraction effect on the heating light 34. Therefore, by setting the second preset distance between the ring lens 12 and the support ring 22, the size and position of the area where the direction of the heating light 34 is not adjusted can be determined, so as to achieve the required distribution of the heating light 34 radiation.

[0055] Specifically, when the support ring 22 directly supports the wafer base 31, the thickness of the support ring 22 is greater than or equal to the thickness of the lens structure 10, which can suspend the lens structure 10 in the air and prevent the lens structure 10 from contacting the wafer base 31 above or the bottom surface below, thus avoiding friction affecting the refractive effect of the lens structure 10.

[0056] In one embodiment, the lens structure 10 and the support structure 20 are integrally formed.

[0057] The present invention integrates the lens structure 10 and the support structure 20 into one piece, eliminating gaps caused by additional connecting structures between the structures and preventing impurities such as particles from affecting the process, thereby improving product yield.

[0058] In one embodiment, as shown in FIG2, the lens structure 10 and the support rod 21 are integrally formed.

[0059] In one embodiment, the quartz support further includes an upper support frame 23, which is a support ring surface formed by extending the support ring 22 upward along the central axis of the support ring 22.

[0060] By setting up an upper support frame 23, the distance between the lens structure 10 and the wafer base 31 can be adjusted by adjusting the height of the upper support frame 23, thereby further realizing the flexibility of adjusting the heating distribution.

[0061] In one embodiment, the quartz support further includes a lower support frame 24, which is a support ring surface formed by extending the support ring 22 downward along the central axis of the support ring 22.

[0062] By setting a lower support frame 24, the present invention creates a gap between the lens structure 10 and the bottom of the process chamber, avoiding damage or scratches to the lens structure 10 due to friction between the lens structure 10 and the bottom of the process chamber, thus ensuring the reliability of the adjustment effect of the lens structure 10 on the heating light 34, and further ensuring the uniformity of the epitaxial layer thickness and resistivity.

[0063] In one embodiment, an upper support frame 23 and a lower support frame 24 may be provided simultaneously.

[0064] In one embodiment, as shown in Figure 1, the upper support frame 23, the lower support frame 24, and the support ring 22 are an integrally formed annular sidewall structure.

[0065] In one embodiment, as shown in FIG1, a support bottom surface 25 and a bottom support frame 26 are also provided below the annular sidewall formed by the upper support frame 23, the lower support frame 24 and the support ring 22.

[0066] In one embodiment, the distance between the lens structure 10 and the bottom of the wafer base 31 is 5 mm to 100 mm.

[0067] The present invention adjusts the refraction effect of the lens structure 10 on the heating light 34 by setting the distance between the lens structure 10 and the bottom of the wafer base 31, thereby further improving the uniformity of the epitaxial process.

[0068] Specifically, this embodiment mainly uses epitaxial process as an example to illustrate the solution and effect of the present invention. However, the method of the present invention can also be applied to any other process that requires heating light 34 to improve the uniformity of the distribution of structural thickness or other parameter properties after the process.

[0069] Example 2

[0070] As shown in Figure 5, this embodiment provides a quartz support. Other features of the quartz support are similar to those of the quartz support in Embodiment 1. The difference is that the support structure 20 is a quartz block 27, and the lens structure 10 is formed by the concave, convex and / or planar surfaces of the top and / or bottom surfaces of the quartz block 27. The lens structure 10 and the support structure 20 are integrally formed.

[0071] This invention sets the quartz support as a quartz block 27 with a lens structure 10 on its surface, so that the entire quartz block 27 can be directly integrally molded to obtain a new support structure 20 with a lens structure 10. Compared with the solution of Embodiment 1, it is also more convenient and simple to process the annular lens 12 by directly making an annular groove on the quartz block 27, and the support effect is better, but the weight increases. In specific use, the choice can be made according to the actual application requirements.

[0072] In one embodiment, the support structure 20 further includes at least one support block 28, which is stacked with the quartz block 27 in a preset order so that the lens structure 10 is located at a preset height. Specifically, as shown in FIG5, the quartz block 27 containing the lens structure 10 can be located above the support block 28; or as shown in FIG6, the quartz block 27 containing the lens structure 10 can be located below the support block 28; or as shown in FIG7, the quartz block 27 containing the lens structure 10 can be located between two support blocks 28, which can be reasonably set according to needs; as shown in FIG5-FIG7, two support blocks 28 are used, and the number of support blocks 28 can be adjusted according to needs.

[0073] By setting support blocks 28, the distance between the lens structure 10 on the quartz block 27 and the bottom of the wafer base 31 can be flexibly adjusted by the number and thickness of the support blocks 28 between the quartz block 27 and the wafer base 31, thereby adapting to process devices with different heating light 34 distribution adjustment requirements.

[0074] Specifically, the support block 28 can be a ring-shaped quartz with a diameter less than or equal to that of the quartz block 27, or it can be a solid block of quartz. When the support block 28 is a solid block of quartz, the diameter of the support block 28 can be greater than or equal to the diameter of the quartz block 27, or it can be smaller than the diameter of the quartz block 27.

[0075] Preferably, the support block 28 is a solid block of quartz, the diameter of the support block 28 is greater than or equal to the diameter of the quartz block 27, and the central axis of the support block 28 coincides with the central axis of the quartz block 27.

[0076] In one embodiment, the support block 28 and the quartz block 27, and the support blocks 28 themselves, can be detachably and fixedly connected by bonding layers, snap-fit ​​structures or other means, so that they can be fixed relative to each other during the heating process, and can be separated to adjust the stacking order when it is necessary to change the distance between the lens structure 10 and the wafer base 31.

[0077] In one embodiment, the central lens 11 shown in FIG5 is a concave lens and the ring lens 12 is a convex lens. Other combinations of lens types can also be provided as needed.

[0078] Example 3

[0079] This embodiment provides a semiconductor process chamber, which includes a quartz support member as described in either Embodiment 1 or Embodiment 2. Figure 8 shows a side cross-sectional view of the semiconductor process chamber including the quartz support member as described in Embodiment 1, and Figure 9 shows a side cross-sectional view of the semiconductor process chamber including the quartz support member as described in Embodiment 2. The semiconductor process chamber also includes a wafer base 31, which is used to place a wafer 32 to be processed, and the wafer base 31 is placed on the quartz support member.

[0080] In one embodiment, as shown in Figures 8-9, the semiconductor process chamber further includes a heating lamp assembly 33, which provides heating light 34 and radiates the heating light 34 onto the surface of the wafer 32 to be processed. The heating lamp assembly 33 is located at the top of the wafer base 31 and the bottom of the quartz support. The heating lamp assembly 33 located at the bottom of the quartz support radiates the heating light 34 onto the lower surface of the wafer 32 to be processed on the wafer base 31 through the quartz support.

[0081] In one embodiment, the semiconductor process chamber further includes a quartz cover located above the wafer pedestal 31, and the heating lamp group 33 located above the quartz cover radiates heating light 34 through the quartz cover onto the upper surface of the wafer 32 to be processed on the wafer pedestal 31.

[0082] In one embodiment, a reflective gold plate is disposed above the heating lamp assembly 33 located above the quartz cover, and a reflective gold plate is disposed below the heating lamp assembly 33 located at the bottom of the quartz support.

[0083] Specifically, the heating lamp group 33, the reflective gold plate, and the quartz cover are all existing heating structures commonly used in semiconductor process chambers.

[0084] This invention improves the uniformity of structural thickness or other performance parameters after the process by setting a quartz support with a lens structure 10 at the bottom of the wafer substrate 31. This is achieved by adjusting the heating light 34 through the lens structure 10 during the heating step in the semiconductor process chamber. The novel structure of the central lens 11 and the ring lens 12 in the lens structure 10 allows for targeted adjustment of the non-uniform ring-shaped distribution of the heating light 34 caused by the structure of the heating lamp group 33, the reflective gold plate, and the semiconductor process chamber. This eliminates the need to adjust the original structure of the heating lamp group 33, the quartz cover, or the reflective gold plate in the semiconductor process chamber. As a result, the quartz support can be flexibly adjusted and set without introducing new non-uniform distributions, thus significantly improving the uniformity of the structure and performance parameters after the process.

[0085] Example 4

[0086] This embodiment provides a semiconductor process method, wherein the semiconductor process method uses the semiconductor process chamber in Embodiment 1 or Embodiment 2 to perform the heating step in the semiconductor process.

[0087] In one embodiment, the semiconductor process is a homogeneous single-crystal epitaxy process on a silicon wafer.

[0088] Specifically, the method of the present invention can also be applied to any other process that requires heating light to improve the uniformity of the distribution of structural thickness or other parameter properties after the process.

[0089] In summary, the quartz support, semiconductor process chamber, and semiconductor process method of the present invention can refract heating light by placing the wafer substrate on the quartz support containing a lens structure, and setting the lens structure to include a central lens and a ring lens, thereby adjusting the annular uneven distribution of radiant heat caused by the heating lamp, reflective gold plate, and cavity structure, optimizing the adjustment accuracy of heating uniformity, and improving the uniformity of epitaxial layer thickness and resistivity obtained after the heating process. In addition, by setting the lens structure and support structure as an integral molding structure, the dust particles brought by the quartz support are reduced, improving product yield. Finally, by using support blocks and quartz blocks with adjustable stacking order, the height of the lens structure can be flexibly adjusted, further improving the adjustment accuracy of heating uniformity.

[0090] Therefore, this invention effectively overcomes the various shortcomings of the prior art and has high industrial application value.

[0091] The above embodiments are merely illustrative of the principles and effects of the present invention and are not intended to limit the invention. Any person skilled in the art can modify or alter the above embodiments without departing from the spirit and scope of the present invention. Therefore, all equivalent modifications or alterations made by those skilled in the art without departing from the spirit and technical concept disclosed in the present invention should still be covered by the claims of the present invention.

Claims

1. A quartz support, characterized in that, The quartz support includes a lens structure and a support structure; The lens structure includes a central lens and at least one ring lens, the ring lens surrounds the central lens, the shortest distance between the ring lens and the central lens is a first preset distance, the central lens is a concave lens or a convex lens, and the ring lens is a concave lens and / or a convex lens; the lens structure is placed on the support structure, the support structure is used to support the lens structure and the wafer substrate placed above the support structure.

2. The quartz support member according to claim 1, characterized in that, When the lens structure includes one ring lens, the central lens is a concave lens with a diameter of 20 mm to 80 mm; the ring lens is either a convex or concave lens with an inner diameter of 40 mm to 100 mm and an outer diameter of 90 mm to 140 mm. The distance between the midpoint between the inner and outer edges of the ring lens and the central axis of the ring lens is half the inner diameter of the support ring.

3. The quartz support member according to claim 1, characterized in that, When the lens structure includes two ring lenses, the central lens is a concave lens with a radius of 20 mm to 40 mm; the first ring lens closer to the central lens is a convex lens with an inner diameter of 30 mm to 50 mm, an outer diameter of 50 mm to 80 mm, and a distance of 40 mm to 65 mm between the midpoint between the inner and outer edges of the first ring lens and the central axis of the ring lens; the second ring lens farther from the central lens is a concave lens with an inner diameter of 70 mm to 90 mm, an outer diameter of 120 mm to 150 mm, and a distance of 95 mm to 120 mm between the midpoint between the inner and outer edges of the second ring lens and the midpoint between the inner and outer edges of the ring lens closer to the central lens.

4. The quartz support member according to claim 1, characterized in that, The support structure includes a support rod and a support ring. The annular lens and the central lens are connected by the support rod. When the lens structure includes two or more annular lenses, adjacent annular lenses are connected by the support rod. The support ring surrounds the outermost annular lens. The shortest distance between the outermost annular lens and the support ring is a second preset distance. The outermost annular lens and the support ring are connected by the support rod. The thickness of the support ring is greater than or equal to the thickness of the lens structure.

5. The quartz support member according to claim 4, characterized in that, The lens structure and the support structure are integrally formed.

6. The quartz support member according to claim 4, characterized in that, The quartz support further includes an upper support frame, which is a support ring surface formed by extending the support ring upward along the central axis of the support ring; and / or the quartz support further includes a lower support frame, which is a support ring surface formed by extending the support ring downward along the central axis of the support ring.

7. The quartz support member according to claim 1, characterized in that, The supporting structure is a quartz block, and the lens structure is formed by the concave, convex and / or flat surfaces of the top and / or bottom surfaces of the quartz block. The lens structure and the supporting structure are integrally formed.

8. The quartz support member according to claim 7, characterized in that, The support structure also includes at least one support block, which is stacked with the quartz block in a preset order so that the lens structure is located at a preset height.

9. A semiconductor process chamber, characterized in that, The semiconductor process chamber includes a quartz support as described in any one of claims 1-8, and the semiconductor process chamber further includes a wafer base for placing a wafer to be processed, the wafer base being placed on the quartz support.

10. A semiconductor manufacturing process, characterized in that, The semiconductor process method uses the semiconductor process chamber described in claim 9 to perform the heating step in the semiconductor process.

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