Multiphase flow reactor with secondary flow for enhanced silicon-containing species production

Abstract

A device for producing a silicon-containing species comprises a reaction chamber with an inlet side and an outlet side. The inlet side receives a multiphase flow comprising a plasma stream, which comprises silica and a first gas comprising at least a reducing gas. The silica and the first gas form Si and / or SiH. The reaction chamber is in communication with an inlet after the outlet side, whereby the inlet introduces a secondary flow of a second gas comprising a reducing gas and / or an oxidizing gas to the multiphase flow for a reaction with the Si and / or SiH to form a composition comprising the silicon-containing species. The secondary flow has a flow direction which comprises a vector component in a counter direction, and / or in a perpendicular direction, relative to an outlet flow direction of the expelled multiphase flow to decrease a flow velocity of the expelled multiphase flow and / or the composition.

Description

[0001] Multiphase Flow Reactor with Secondary Flow for Enhanced Silicon-Containing Species Production

[0002] Field

[0003] The technology relates to the field of silicon-containing species production, specifically focusing on the synthesis of silane species, such as SiH4 or SiHCI3. These silicon- containing species are essential in various industries, including semiconductor manufacturing, solar cell production, and chemical synthesis.

[0004] Background

[0005] Silicon-containing species, such as silane and high-purity polysilicon, are essential materials in various industries, including the semiconductor, solar cell, and electronics industries. The conventional process for producing these materials involves a multi- step process that is both complex and costly. The process typically starts with the reaction of quartz with coal to produce metal-grade silicon. This metal-grade silicon is then reacted with hydrochloric acid to form several silicon gas derivatives, which are distilled to form the desired silane, such as monosilane or trichlorosilane. The silanes are then decomposed using a chemical vapor deposition method, such as the Siemens process or a fluidized bed reactor, to produce high-purity polysilicon.

[0006] One of the major drawbacks of this process chain is its high carbon footprint. The production of metal-grade silicon through carbothermic reduction with coal results in significant CO2 emissions, as well as substantial electricity and hydrogen consumption. The subsequent formation of silane from silicon and the decomposition of silane into polysilicon further contribute to the overall carbon footprint of the process. This environmental impact is a significant concern, as industries are increasingly seeking to reduce their carbon emissions and adopt more sustainable production methods.

[0007] Another limitation of the current production methods is the requirement for large-scale installations, which are capital-intensive and not suitable for decentralized production. This poses a challenge for industries that may benefit from smaller, modular reactors with lower capital expenditure (CAPEX) requirements and the ability to produce silicon- containing species on a smaller scale.

[0008] In recent years, hydrogen plasma-based modular reactors have been explored as an alternative method for producing silicon-containing species. However, these reactors face several challenges, including limited yield of the desired products without adequate control of precursors and process parameters. Additionally, the presence of hydrogen in the plasma input gas mix can cause instability and aggressive reactions with the refractory material and electrodes, leading to equipment damage and reduced efficiency.

[0009] In summary, the current methods for producing silicon-containing species, such as silane and high-purity polysilicon, suffer from several drawbacks, including high carbon footprint, complex and costly process chains, and limitations in the use of hydrogen plasma-based modular reactors. There is a need for improved production methods that address these challenges and enable more efficient, sustainable, and decentralized production of silicon-containing species.

[0010] Summary

[0011] According to a first aspect of the disclosure, a device for producing a silicon-containing species is provided. This device comprises a reaction chamber having an inlet side and an outlet side along an axial direction. The inlet side is configured to receive a multiphase flow comprising a plasma stream. This plasma stream comprises silica and a first gas comprising at least a reducing gas. The silica and the first gas form Si and / or SiH in the reaction chamber. The outlet side of the reaction chamber is configured to build up a pressure in the multiphase flow by exerting a force on the multiphase flow in an inward radial direction towards a center of the reaction chamber. This radial direction is perpendicular to the axial direction. As a result, the multiphase flow is expelled from the outlet side with a reduced temperature. The reaction chamber is in communication with an inlet arranged after the outlet side. This inlet is in communication with the expelled multiphase flow and is configured to introduce a secondary flow of a second gas comprising a reducing gas and / or an oxidizing gas to the multiphase flow for a reaction with the Si and / or SiH to form a composition comprising the silicon-containing species. The secondary flow has a flow direction which comprises a vector component in a counter direction, and / or in a perpendicular direction, relative to an outlet flow direction of the expelled multiphase flow to decrease a flow velocity of the expelled multiphase flow and / or the composition. This arrangement is configured to decrease the net axial flow velocity of the expelled multiphase flow and / or the composition, thereby increasing the residence time for the reaction to occur. In a preferred embodiment, this is achieved by injecting the secondary flow tangentially to generate a helical flow. This configuration allows for efficient production of silicon-containing species with a high yield and more complete reactions.

[0012] Optionally in some examples, the device comprises an expansion chamber connected to the outlet side of the reaction chamber. The inlet is arranged in the expansion chamber. This arrangement allows for better control of the flow of gases and enhances the efficiency of the reaction.

[0013] Optionally in some examples, the device comprises a vacuum pump connected to an outlet of the expansion chamber. A filtration device is arranged between the vacuum pump and the expansion chamber. This setup aids in maintaining the purity of the silicon-containing species produced.

[0014] Optionally in some examples, the expansion chamber is configured to maintain a reservoir pressure between 0.1 and 50 mbar. This pressure range is optimal for the formation of the silicon-containing species.

[0015] Optionally in some examples, the reducing gas is hydrogen-containing.

[0016] Optionally in some examples, the oxidizing gas is chlorine-containing. Chlorine is a strong oxidizing agent and can facilitate the formation of the silicon-containing species.

[0017] Optionally in some examples, the silicon-containing species is a silane species, such as SiH4 or SiHCI3. These are common silicon-containing species used in various industrial applications. Optionally in some examples, the flow direction of the secondary flow is opposite the outlet flow direction. This counter flow increases the residence time of the reaction and promotes the formation of the silicon-containing species.

[0018] Optionally in some examples, the flow direction of the secondary flow is perpendicular to the outlet flow direction. This perpendicular flow increases the residence time of the reaction and promotes the formation of the silicon-containing species.

[0019] Optionally in some examples, the device comprises a collection and purification system for collecting and purifying the silicon-containing species. The collection and purification system comprises at least one of a cold trap condenser unit, a membrane separation unit, and a cryogenic separation unit. This system ensures that the silicon- containing species produced is of high purity and free from impurities and byproducts.

[0020] Optionally in some examples, the device comprises an energy and resource management system for managing energy and resources required for the production of the silicon-containing species. This system ensures that the production process is energy-efficient and resource-efficient, thereby reducing the overall cost of production.

[0021] According to a second aspect of the disclosure, a method of producing a silicon- containing species is provided. This method involves receiving a multiphase flow comprising a plasma stream at an inlet side of a reaction chamber, forming Si and / or SiH in the reaction chamber from silica and a first gas of the plasma stream comprising at least a reducing gas, building up pressure in the reaction chamber by exerting a force on the multiphase flow in an inward radial direction towards a center of the reaction chamber at an outlet side of the reaction chamber, expelling the multiphase flow from the outlet side with a reduced temperature, introducing a secondary flow at an inlet after the outlet side of a second gas comprising a reducing gas and / or an oxidizing gas to the multiphase flow for a reaction with the Si and / or SiH to form a composition comprising the silicon-containing species, and decreasing a flow velocity of the expelled multiphase flow and / or the composition by having a flow direction of the secondary flow which comprises a vector component in a counter direction, and / or in a perpendicular direction, relative to an outlet flow direction of the expelled multiphase flow. This method allows for efficient production of silicon-containing species with a high yield.

[0022] Brief Description of the Drawings

[0023] Examples are described in more detail below with reference to the appended drawings. Figure 1 is a schematic illustration of a device for producing a silicon-containing species according to an example of the disclosure.

[0024] Figure 2 is a schematic illustration of a device for producing a silicon-containing species according to an example of the disclosure.

[0025] Figure 3 is a schematic illustration of a device for producing a silicon-containing species according to an example of the disclosure.

[0026] Figure 4 is a schematic illustration of a device for producing a silicon-containing species according to an example of the disclosure.

[0027] Figure 5 is a schematic illustration of a device for producing a silicon-containing species according to an example of the disclosure.

[0028] Figure 6 is a schematic illustration of a device for producing a silicon-containing species according to an example of the disclosure.

[0029] Figure 7 is a schematic illustration of a method for producing a silicon-containing species according to an example of the disclosure.

[0030] Detailed Description

[0031] The detailed description set forth below provides information and examples of the disclosed technology with sufficient detail to enable those skilled in the art to practice the disclosure.

[0032] Figure 1 shows a schematic illustration of a device 100 for producing a silicon- containing species according to an example of the disclosure. The device 100 comprises a reaction chamber 101 with an inlet side 102 and an outlet side 103 along an axial direction 104. The inlet side 102 is configured to receive a multiphase flow 105 comprising a plasma stream, which comprises silica and a first gas comprising at least a reducing gas. The silica and the first gas form Si and / or SiH in the reaction chamber 101. The outlet side 103 of the reaction chamber is configured to build up pressure in the multiphase flow 105 by exerting a force on the multiphase flow in an inward radial direction 106 towards a center of the reaction chamber 101. The radial direction 106 is perpendicular to the axial direction 104. The multiphase flow 105 is expelled from the outlet side 103 with a reduced temperature.

[0033] A secondary flow 107 of a second gas is introduced to the expelled multiphase flow 105. The second gas comprises a reducing gas and / or an oxidizing gas to the multiphase flow 105 for a reaction with the Si and / or SiH to form a composition comprising the silicon-containing species, such as a silane species. The reducing gas may be hydrogen-containing. The oxidizing gas may be chlorine-containing.

[0034] The secondary flow 107 has a flow direction 109 which comprises a vector component in a counter direction, and / or in a perpendicular direction, relative to an outlet flow direction 110 of the expelled multiphase flow 105. The secondary flow 107 decreases a flow velocity of the expelled multiphase flow 105 and / or the composition. This allows for efficient production of silicon-containing species with a high yield. The silicon- containing species is a silane species, such as SiH4 or SiHCI3.

[0035] Figure 2 shows a schematic illustration of a device 100 for producing a silicon- containing species according to an example of the disclosure. The reaction chamber 101 is in communication with an inlet 108 arranged after the outlet side 103. The inlet 108 is in communication with the expelled multiphase flow 105 and is configured to introduce a secondary flow 107. In this example, the device 100 comprises an expansion chamber 111 connected to the outlet side 103 of the reaction chamber 101. The inlet 108 is arranged in the expansion chamber 111. The inlet 108 introduces the secondary flow 107 opposite the direction of the outlet flow direction 110. The expansion chamber 111 may be configured to maintain a reservoir pressure between 0.1 and 50 mbar.

[0036] Figure 3 shows a schematic illustration of a device 100 for producing a silicon- containing species according to an example of the disclosure. An inlet 108 is arranged at either side of the expansion chamber 111 to introduce a secondary flow 107 from two directions towards the outlet flow direction 110. The flow direction 109 of the secondary flow 107 has a vector component in a counter direction, as well as in a perpendicular direction, relative to the outlet flow direction 110.

[0037] Figure 4 shows a schematic illustration of a device 100 for producing a silicon- containing species according to an example of the disclosure. In this example, the expansion chamber 111 has an outlet 114, which may be connected to a vacuum pump 116. An inlet 108 is arranged at either side of the expansion chamber 111 to each introduce a secondary flow 107 perpendicular to the outlet flow direction 110. The flow direction 109 of the secondary flow 107 has a vector component in a perpendicular direction, relative to the outlet flow direction 110.

[0038] Figure 5 shows a schematic illustration of a device 100 for producing a silicon- containing species according to an example of the disclosure. The device 100 may comprise a collection and purification system. A filtration device 115 is arranged between a vacuum pump 116 and the expansion chamber 111. A container 117 may be in communication with the pump 116 to collect the separated silicon-containing species, such as silane. The pump 116 may be connected to an exhaust 118.

[0039] Figure 6 shows a schematic illustration of a device 100 for producing a silicon- containing species according to an example of the disclosure. A collection and purification system is shown, where a wet scrubber or membrane separator 119 is arranged after the filter 115.

[0040] Figure 7 shows a schematic illustration of a method 200 for producing a silicon- containing species according to an example of the disclosure. The method comprises receiving 201 a multiphase flow 105 comprising a plasma stream at an inlet side 102 of a reaction chamber 101 , forming 202 Si and / or SiH in the reaction chamber 101 from silica and a first gas of the plasma stream comprising at least a reducing gas, building up pressure 203 in the reaction chamber 101 by exerting a force on the multiphase flow 105 in an inward radial direction 106 towards a center of the reaction chamber 101 at an outlet side 103 of the reaction chamber 101 , expelling 203 the multiphase flow 105 from the outlet side 103 with a reduced temperature, and introducing 204 a secondary flow 107 at an inlet 108 after the outlet side 103 of a second gas comprising a reducing gas and / or an oxidizing gas to the multiphase flow 105 for a reaction with the Si and / or SiH to form a composition comprising the silicon- containing species. The method also comprises decreasing 205 a flow velocity of the expelled multiphase flow 105 and / or the composition by having a flow direction 109 of the secondary flow 107 which comprises a vector component in a counter direction, and / or in a perpendicular direction, relative to an outlet flow direction 110 of the expelled multiphase flow 105.

[0041] Further examples of the disclosure will be described in the following

[0042] 1. Device 100 For Producing A Silicon-Containing Species Details

[0043] The device 100 is designed for the production of a silicon-containing species. The device 100 is structured to facilitate a series of chemical reactions that result in the formation of silicon-containing species. The device 100 comprises several components, each with specific functions that contribute to the overall operation of the device 100. The components of the device 100 are arranged in a manner that allows for the efficient flow of gases and materials through the device 100, facilitating the reactions needed to produce the silicon-containing species.

[0044] 1.1. Reaction Chamber

[0045] The reaction chamber 101 is a component of the device 100 where the initial reactions take place. The reaction chamber 101 is designed to handle the multiphase flow 105, which comprises a plasma stream. The plasma stream comprises a mixture of silica and a first gas, which comprises at least a reducing gas. The reaction chamber 101 is structured to facilitate the reaction between the silica and the first gas to form Si and / or SiH. The reaction chamber 101 has an inlet side 102 and an outlet side 103, which are arranged along an axial direction 104. The inlet side 102 is configured to receive the multiphase flow 105, while the outlet side 103 is designed to build up pressure in the multiphase flow 105 by exerting a force on the multiphase flow 105 in an inward radial direction 106 towards a center of the reaction chamber 101. The radial direction 106 is perpendicular to the axial direction 104. The pressure build-up in the reaction chamber 101 results in the expulsion of the multiphase flow 105 from the outlet side 103 with a reduced temperature. 1 .2. Inlet and Secondary flow

[0046] The inlet 108 is arranged after the outlet side 103 of the reaction chamber 101. The inlet 108 is designed to introduce a secondary flow 107 to the multiphase flow 105 that has been expelled from the outlet side 103 of the reaction chamber 101. The secondary flow 107 comprises a second gas, which can be a reducing gas and / or an oxidizing gas. The secondary flow 107 is introduced to the multiphase flow 105 for a reaction with the Si and / or SiH to form a composition comprising the silicon-containing species. The flow direction 109 of the secondary flow 107 comprises a vector component in a counter direction, and / or in a perpendicular direction, relative to an outlet flow direction 110 of the expelled multiphase flow 105. This arrangement of the inlet 108 and the flow direction 109 of the secondary flow 107 helps to decrease the flow velocity of the expelled multiphase flow 105 and / or the composition, which can enhance the efficiency of the reactions taking place in the device 100 and increase the yield of the silicon-containing species.

[0047] The primary goal of the secondary flow injection is to decrease the net axial flow velocity of the reactants, thereby maximizing the residence time to ensure a more complete chemical reaction. To achieve this, the secondary flow 107 is preferably introduced tangentially to the main axial flow, generating a helical flow path. This tangential injection is accomplished by designing the injection system to meet several conditions:

[0048] • The secondary flow is choked as it passes through the injector orifices, meaning it reaches sonic velocity (Mach 1 ) at the throat of the injector.

[0049] • The sizing of the orifices and the angle of the high-velocity jet are precisely controlled to ensure a stable helical path is formed.

[0050] • A momentum match is calculated between the axial and secondary flows to prevent the secondary flow from being immediately deflected or penetrating directly through the axial flow, instead promoting the desired helical interaction. The number and size of the injector holes are determined by the desired flow rate of the secondary gas, which is in turn calculated as a specific fraction of the main axial flow rate to achieve the desired stoichiometry for the reaction.

[0051] 1.2.1. Example of a Secondary Flow Injection Configuration

[0052] In one non-limiting example configuration of the device, the system is set up to inject a secondary gas tangentially into a choked, supersonic axial gas stream. The objective is to inject the gas from an 8-bar reservoir into the existing Mach 1 .2 axial flow, which is held at a static pressure of 20 mbar. The goal is to induce a backward helical swirl by setting the injection angle between 120-150° relative to the upstream axial direction. An angle of 135° is considered optimal for generating strong backward swirl with limited wall impingement.

[0053] The operational parameters for such a configuration could be as follows:

[0054] 1.3. Expansion Chamber

[0055] In some implementations, the device 100 comprises an expansion chamber 111. The expansion chamber 111 is connected to the outlet side 103 of the reaction chamber 101. The expansion chamber 111 is designed to receive the multiphase flow 105 that has been expelled from the outlet side 103 of the reaction chamber 101. The expansion chamber 111 provides a space for the multiphase flow 105 to expand and cool down, which can enhance the efficiency of the reactions taking place in the device 100. The inlet 108, which introduces the secondary flow 107, is arranged in the expansion chamber 111. This arrangement allows for the secondary flow 107 to be introduced to the multiphase flow 105 in a controlled manner, which can enhance the efficiency of the reactions taking place in the device 100.

[0056] The expansion chamber 111 comprises an outlet 114. The outlet 114 is designed to allow for the expulsion of the multiphase flow 105 and / or the composition from the expansion chamber 111. The outlet 114 may be connected to a vacuum pump 116. The vacuum pump 116 is configured to remove gases and materials from the expansion chamber 111. The vacuum pump 116 thus helps to maintain a low pressure in the expansion chamber 111 , which can enhance the efficiency of the reactions taking place in the device 100 and increase the yield of the silicon-containing species. The vacuum pump 116 can also help to remove any unreacted gases and materials from the expansion chamber 111 , which can improve the purity of the silicon-containing species produced in the device 100.

[0057] 1.4. Filtration Devices

[0058] In some configurations, the device 100 comprises filtration devices 115. The filtration devices 115 are designed to remove impurities from the gases and materials that pass through them. The filtration devices 115 can be arranged between the vacuum pump 116 and the expansion chamber 111. This arrangement allows the filtration devices 115 to filter out impurities from the gases and materials that are expelled from the expansion chamber 111 before they reach the vacuum pump 116. This can help to protect the vacuum pump 116 from damage and prolong its operational lifespan. The filtration devices 115 can also improve the purity of the silicon-containing species produced in the device 100 by removing impurities from the gases and materials that pass through them.

[0059] 1 .5. Cryogenic Compression System

[0060] In some examples, the device 100 comprises a cryogenic compression system. The cryogenic compression system is configured to cool and compress the gases and materials that pass through it. The cooling and compression of the gases and materials can enhance the efficiency of the reactions taking place in the device 100 and increase the yield of the silicon-containing species. The cryogenic compression system can also help to separate the silicon-containing species from unreacted precursor gases and byproduct gases, which can improve the purity of the silicon-containing species produced in the device 100.

[0061] 1 .6. Collection And Purification System

[0062] The device 100 may comprise a collection and purification system. The collection and purification system is configured to collect and purify the silicon-containing species produced in the device 100. The collection and purification system separates the silicon-containing species from other byproducts and impurities, resulting in a high- purity silicon-containing species. The collection and purification system can comprise various components, such as a cold trap condenser unit, a membrane separation unit, and a cryogenic separation unit. These components can work together to reduce the gas outlet temperature to below the condensation temperature of the silicon-containing species but not other gases, which can enhance the efficiency of the collection and purification process.

[0063] 2. Method Of Producing A Silicon-Containing Species Method Details

[0064] The method of producing a silicon-containing species involves a series of steps that are carried out in the device 100. These steps are designed to facilitate the efficient production of a silicon-containing species with a high yield.

[0065] 2.1. Receiving a Multiphase Flow

[0066] The first step in the method involves receiving a multiphase flow 105 at the inlet side 102 of the reaction chamber 101. The multiphase flow 105 comprises a plasma stream, which comprises a mixture of silica and a first gas. The first gas comprises at least a reducing gas, which can facilitate the reaction between the silica and the first gas to form Si and / or SiH in the reaction chamber 101. The composition of the multiphase flow 105 is carefully controlled to ensure the efficient production of the silicon- containing species. The composition of the multiphase flow 105 can be adjusted based on the specific requirements of the reactions taking place in the device 100 and the desired yield of the silicon-containing species. The multiphase flow 105 is introduced into the reaction chamber 101 , where it undergoes a series of reactions to form Si and / or SiH.

[0067] 2.2. Forming Si and / or SiH in the Reaction Chamber

[0068] The second step in the method involves forming Si and / or SiH in the reaction chamber 101. This is achieved through the reaction between the silica and the first gas in the multiphase flow 105. The reaction chamber 101 is designed to facilitate this reaction, providing the optimal conditions for the formation of Si and / or SiH. The reaction chamber 101 is structured to handle the multiphase flow 105, ensuring that the silica and the first gas are thoroughly mixed and reacted to form Si and / or SiH.

[0069] The silica serves as the source of silicon, while the reducing gas facilitates the reduction of the silica to form Si and / or SiH. The reducing gas can be any gas that is capable of reducing silica, such as hydrogen. The reaction between the silica and the reducing gas is a reduction reaction, which results in the formation of Si and / or SiH. This reaction is facilitated by the conditions in the reaction chamber 101 , which are optimized for the efficient production of Si and / or SiH.

[0070] 2.3. Building Up Pressure in the Reaction Chamber

[0071] The third step in the method involves building up pressure in the reaction chamber 101. This is achieved by exerting a force on the multiphase flow 105 in an inward radial direction 106 towards a center of the reaction chamber 101 at the outlet side 103 of the reaction chamber 101. The build-up of pressure in the reaction chamber 101 helps to facilitate the reactions taking place in the reaction chamber 101 , enhancing the efficiency of the production of the silicon-containing species.

[0072] The outlet side 103 is designed to exert a force on the multiphase flow 105 in the inward radial direction 106. This force results in a build-up of pressure in the reaction chamber 101. The radial direction 106 is perpendicular to the axial direction 104, which ensures that the force exerted on the multiphase flow 105 is directed towards the center of the reaction chamber 101. 2.4. Expelling the Multiphase Flow

[0073] The fourth step in the method involves expelling the multiphase flow 105 from the outlet side 103 of the reaction chamber 101. The expulsion of the multiphase flow 105 is facilitated by the build-up of pressure in the reaction chamber 101. The multiphase flow 105 is expelled from the outlet side 103 with a reduced temperature. The reduction in temperature of the multiphase flow 105 helps to facilitate the reactions taking place in the device 100, enhancing the efficiency of the production of the silicon-containing species. The direction of the outlet flow 110 is designed to facilitate the efficient expulsion of the multiphase flow 105 from the outlet side 103 of the reaction chamber 101.

[0074] 2.5. Introducing a Secondary Flow and Decreasing Flow Velocity

[0075] The fifth step in the method involves introducing a secondary flow 107 at an inlet 108, after the outlet side 103 of the reaction chamber 101. The secondary flow 107 comprises a second gas, which can be a reducing gas and / or an oxidizing gas. The composition of the secondary flow 107 is carefully controlled to ensure the efficient production of the silicon-containing species. The secondary flow 107 is introduced to the multiphase flow 105 for a reaction with the Si and / or SiH that have been formed in the reaction chamber 101. This reaction results in the formation of a composition comprising the silicon-containing species.

[0076] The sixth step in the method involves decreasing the flow velocity of the expelled multiphase flow 105 and / or the composition. This is achieved by having a flow direction 109 of the secondary flow 107 which comprises a vector component in a counter direction, and / or in a perpendicular direction, relative to an outlet flow direction 110 of the expelled multiphase flow 105. This arrangement of the flow direction 109 of the secondary flow 107 helps to decrease the flow velocity of the expelled multiphase flow 105 and / or the composition, which can enhance the efficiency of the reactions taking place in the device 100 and increase the yield of the silicon-containing species.

[0077] 3. Potential Applications The device 100 and the method for producing a silicon-containing species have potential applications in various industries. These industries can benefit from the efficient production of a silicon-containing species with a high yield.

[0078] 3.1. Application in Silicon Production Industries

[0079] The device 100 and the method for producing a silicon-containing species such as silanes can be applied in silicon production industries. Silicon is a widely used material in various industries, including the electronics industry, the solar energy industry, and the construction industry. The efficient production of a silicon-containing species with a high yield can help to meet the high demand for silicon in these industries.

[0080] The device 100 and the method for producing a silicon-containing species offer several advantages for silicon production. The device 100 is designed to facilitate the efficient production of a silicon-containing species with a high yield. This can help to increase the production capacity of silicon production industries, meeting the high demand for silicon.

[0081] 3.2. Application in Energy Production Industries

[0082] The device 100 and the method for producing a silicon-containing species such as silanes can also find application in energy production industries, particularly in industries involved in the production of solar energy. Silicon is a prime component in the manufacturing of solar panels, which are used to harness solar energy. The efficient production of a silicon-containing species with a high yield can help to meet the high demand for silicon in these industries.

[0083] The device 100 and the method for producing a silicon-containing species offer several advantages for energy production industries. Firstly, the device 100 is designed to facilitate the efficient production of a silicon-containing species with a high yield. This can help to increase the production capacity of energy production industries, meeting the high demand for silicon in the manufacturing of solar panels. In some examples, the device 100 comprises a collection and purification system, which can improve the purity of the silicon-containing species produced in the device 100. This can help to produce high-quality silicon, which is required for the manufacturing of efficient and durable solar panels.

[0084] In addition, the device 100 may comprise an energy and resource management system, which can manage the energy and resources required for the production of the silicon-containing species. This can help to reduce the energy consumption and resource usage of energy production industries, contributing to the sustainability of these industries.

[0085] Furthermore, the method for producing a silicon-containing species involves a series of steps that are carefully controlled to ensure the optimal conditions for the reactions taking place in the device 100. This can help to enhance the efficiency of the reactions, increasing the yield of the silicon-containing species. The method also comprises a step of decreasing the flow velocity of the expelled multiphase flow and / or the composition, which can enhance the efficiency of the reactions and increase the yield of the silicon-containing species. This can help to increase the production capacity of energy production industries, meeting the high demand for silicon in the manufacturing of solar panels.

[0086] Overall, the device 100 and the method for producing a silicon-containing species can provide several advantages for energy production industries, including increased production capacity, improved product quality, reduced energy consumption and resource usage, and enhanced sustainability.

[0087] The terminology used herein is for the purpose of describing particular aspects only and is not intended to be limiting of the disclosure. As used herein, the singular forms "a," "an," and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise. As used herein, the term "and / or" comprises any and all combinations of one or more of the associated listed items. It will be further understood that the terms "comprises," "comprising," "comprises," and / or "including" when used herein specify the presence of stated features, integers, actions, steps, operations, elements, and / or components, but do not preclude the presence or addition of one or more other features, integers, actions, steps, operations, elements, components, and / or groups thereof.

[0088] It will be understood that, although the terms first, second, etc., may be used herein to describe various elements, these elements should not be limited by these terms. These terms are only used to distinguish one element from another. For example, a first element could be termed a second element, and, similarly, a second element could be termed a first element without departing from the scope of the present disclosure.

[0089] Relative terms such as "below" or "above" or "upper" or "lower" or "horizontal" or "vertical" may be used herein to describe a relationship of one element to another element as illustrated in the Figures. It will be understood that these terms and those discussed above are intended to encompass different orientations of the device in addition to the orientation depicted in the Figures. It will be understood that when an element is referred to as being "connected" or "coupled" to another element, it can be directly connected or coupled to the other element, or intervening elements may be present. In contrast, when an element is referred to as being "directly connected" or "directly coupled" to another element, there are no intervening elements present.

[0090] Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this disclosure belongs. It will be further understood that terms used herein should be interpreted as having a meaning consistent with their meaning in the context of this specification and the relevant art and will not be interpreted in an idealized or overly formal sense unless expressly so defined herein.

[0091] It is to be understood that the present disclosure is not limited to the aspects described above and illustrated in the drawings; rather, the skilled person will recognize that many changes and modifications may be made within the scope of the present disclosure and appended claims. In the drawings and specification, there have been disclosed aspects for purposes of illustration only and not for purposes of limitation, the scope of the disclosure being set forth in the following claims.

Claims

Claims1 . A device (100) for producing a silicon-containing species comprising a reaction chamber (101 ) having an inlet side (102) and an outlet side (103) along an axial direction (104), wherein the inlet side is configured to receive a multiphase flow (105) comprising a plasma stream, wherein the plasma stream comprises silica and a first gas comprising at least a reducing gas, wherein the silica and the first gas form Si and / or SiH in the reaction chamber, wherein the outlet side of the reaction chamber is configured to build up a pressure in the multiphase flow by exerting a force on the multiphase flow in an inward radial direction (106) towards a center of the reaction chamber, wherein the radial direction is perpendicular to the axial direction, whereby the multiphase flow is expelled from the outlet side with a reduced temperature, wherein the reaction chamber is in communication with an inlet (108) arranged after the outlet side, whereby the inlet is in communication with the expelled multiphase flow and is configured to introduce a secondary flow (107) of a second gas comprising a reducing gas and / or an oxidizing gas to the multiphase flow for a reaction with the Si and / or SiH to form a composition comprising the silicon-containing species, such as a silane species, wherein the secondary flow has a flow direction (109) which comprises a vector component in a counter direction, and / or in a perpendicular direction, relative to an outlet flow direction (110) of the expelled multiphase flow to decrease a flow velocity of the expelled multiphase flow and / or the composition.

2. Device (100) according to claim 1 , comprising an expansion chamber (111 ) connected to the outlet side (103) of the reaction chamber (101 ), wherein the inlet (108) is arranged in the expansion chamber (111 ).

3. Device (100) according to claim 2, comprising a vacuum pump (116) connected to an outlet (114) of the expansion chamber (111 ), wherein a filtration device (115) is arranged between the vacuum pump (116) and the expansion chamber (111 ).

4. Device (100) according to claim 2 or 3, wherein the expansion chamber (111 ) is configured to maintain a reservoir pressure between 0.1 and 50 mbar.

5. Device (100) according to any of claims 1 - 4, wherein the reducing gas is hydrogencontaining.

6. Device (100) according to any of claims 1 - 5, wherein the oxidizing gas is chlorine- containing.

7. Device (100) according to any of claims 1 - 6, wherein the silicon-containing species is a silane species, such as SiH4 or SiHCI3.

8. Device (100) according to any of claims 1 - 7, wherein the flow direction (109) of the secondary flow (107) is opposite the outlet flow direction (110).

9. Device (100) according to any of claims 1 - 8, wherein the flow direction (109) of the secondary flow (107) is perpendicular to the outlet flow direction (110).

10. Device (100) according to any of claims 1 - 9, comprising a collection and purification system for collecting and purifying the silicon-containing species, wherein the collection and purification system comprises at least one of a cold trap condenser unit, a membrane separation unit, and a cryogenic separation unit.11 . Device (100) according to any of claims 1- 10, comprising an energy and resource management system for managing energy and resources required for the production of the silicon-containing species.

12. A method (200) of producing a silicon-containing species, comprising: receiving (201 ) a multiphase flow (105) comprising a plasma stream at an inlet side (102) of a reaction chamber (101 ); forming (202) Si and / or SiH in the reaction chamber (101 ) from silica and a first gas of the plasma stream comprising at least a reducing gas;building up pressure (203) in the reaction chamber (101 ) by exerting a force on the multiphase flow (105) in an inward radial direction (106) towards a center of the reaction chamber (101 ) at an outlet side (103) of the reaction chamber (101 ); expelling (203) the multiphase flow (105) from the outlet side (103) with a reduced temperature; and introducing (204) a secondary flow (107) at an inlet (108) after the outlet side (103) of a second gas comprising a reducing gas and / or an oxidizing gas to the multiphase flow (105) for a reaction with the Si and / or SiH to form a composition comprising the silicon-containing species, and decreasing (205) a flow velocity of the expelled multiphase flow (105) by a having a flow direction (109) of the secondary flow (107) which comprises a vector component in a counter direction, and / or in a perpendicular direction, relative to an outlet flow direction (110) of the expelled multiphase flow (105) and / or the composition.

Images