Heating device and substrate processing apparatus

Abstract

Disclosed in the present application are a heating device and a substrate processing apparatus. The heating device comprises a heat conducting member and a heating film layer, wherein the heating film layer is arranged on the heat conducting member, and the heat conducting member has a lower surface. The heating device is configured such that: when the device is used to heat a liquid film on a surface of a substrate, the lower surface of the heat conducting member faces the surface of the substrate, the projection of the lower surface on the substrate at least covers the center of the substrate, and the heating film layer is used for conducting heat to the liquid film by means of the lower surface. The present application directly heats liquid films on surfaces of substrates to achieve a heating effect.

Description

Heating device and substrate processing apparatus TECHNICAL FIELD

[0001] The present application relates to the technical field of semiconductor manufacturing, and in particular to a heating device and a substrate processing apparatus. BACKGROUND

[0002] In a semiconductor substrate processing process, the next step of photolithography is etching or ion implantation process. When ion implantation is performed, the ion beam cannot penetrate the photoresist in the area protected by the photoresist, and the ion beam can be implanted into the substrate in the area without photoresist to achieve doping. After ion implantation, the photoresist on the surface of the substrate needs to be removed.

[0003] The commonly used method for removing photoresist is to supply a treatment liquid to the surface of a rotating substrate and form a liquid film on the surface of the substrate. The treatment liquid commonly uses SPM (Sulfuric Acid Hydrogen Peroxide Mixture) liquid, which uses the strong oxidizing power of the SPM liquid to remove the photoresist. For high-dose ion-implanted substrates, the temperature of the SPM liquid needs to be increased to improve the photoresist removal efficiency of the SPM liquid, shorten the process time, save the consumption of the liquid, etc.

[0004] Therefore, it is necessary to provide a heating device and a substrate processing apparatus to solve the problem of how to heat the SPM liquid. SUMMARY

[0005] The present application aims to solve the problem of how to heat the SPM liquid in the prior art.

[0006] To solve the above problems, an embodiment of the present application provides a heating device for heating a liquid film on a substrate surface, comprising:

[0007] a heat-conducting member and a heating film layer, the heating film layer being arranged on the heat-conducting member, the heat-conducting member having a lower surface;

[0008] The heating device is configured such that when the liquid film on the substrate surface is heated, the lower surface of the heat-conducting member faces the substrate surface, and the projection of the lower surface on the substrate at least covers the center of the substrate, and the heating film layer is used to conduct heat to the liquid film through the lower surface.

[0009] Another embodiment of the present application provides a substrate processing apparatus, further comprising:

[0010] the above-mentioned heating device;

[0011] a cleaning device for cleaning the lower surface of the heat-conducting member.

[0012] Another embodiment of the present application provides a substrate processing apparatus, comprising:

[0013] a substrate tray for carrying and rotating a substrate along a first direction;

[0014] a nozzle for supplying a processing liquid to a surface of the substrate and forming a liquid film on the surface of the substrate;

[0015] a heating device for heating the liquid film, the heating device having a first end and a second end;

[0016] wherein the nozzle and the heating device are arranged in sequence along the first direction;

[0017] the substrate processing apparatus is configured such that, when the liquid film on the surface of the substrate is heated, a projection of the first end of the heating device on the substrate covers a center of the substrate, a projection of the second end of the heating device on the substrate covers an edge of the substrate, and a projection of the nozzle on the substrate deviates from the center of the substrate.

[0018] The heating device provided in the present application directly heats the liquid film on the surface of the substrate by arranging the heat-conducting member and the heating film layer. The lower surface of the heat-conducting member projects on the substrate to cover at least the center of the substrate, so that the heat generated by the heating film layer is conducted to the liquid film on the surface of the substrate through the lower surface. With the rotation of the substrate, the liquid film on the entire surface of the substrate is heated, and the heating effect is achieved.

[0019] The substrate processing apparatus provided in the present application can clean the lower surface of the heat-conducting member after the heating device finishes heating the liquid film, so as to clean the acid mist attached to the lower surface.

[0020] The substrate processing apparatus provided in the present application arranges the nozzle to project on the substrate to deviate from the center of the substrate, and arranges the nozzle and the heating device in sequence along the rotation direction of the substrate. When the substrate rotates along the first direction, most of the processing liquid discharged from the nozzle is brought into the lower part of the heating device along the first direction for heating, which is beneficial to improve the utilization rate of the heating device.

[0021] Other features and corresponding advantages of the present application are described in the later part of the specification and should be understood that at least part of the advantages is apparent from the description in the specification.

[0022] SUMMARY

[0023] The features and performances of the present application are further described in the following examples and the accompanying drawings.

[0024] Fig. 1 is an exploded schematic view of the heat-conducting member of Example 1 of the present application when the heat-conducting member is located above the substrate;

[0025] Figs. 2a to 2e are schematic views of the normal projection of the lower surface of the heat-conducting member of Example 1 of the present application in the plane of the substrate in different shapes;

[0026] FIG. 3 is a schematic view of a cross-sectional structure of the heat conducting member of the embodiment 1 of the present application when the heat conducting member is located above the substrate;

[0027] FIG. 4 is a schematic view of a top structure of the substrate processing apparatus of the embodiment 1 of the present application; and

[0028] FIG. 5 is a schematic view of a front projection of the heating device and the nozzle of the embodiment 2 of the present application on a plane where the substrate is located.

[0029] Preferred embodiments of the present application

[0030] The present application will now be described in detail below with specific embodiments, and those skilled in the art can easily understand other advantages and effects of the present application from the content disclosed in the description. Although the description of the present application will be introduced in combination with the preferred embodiments, it does not mean that the features of the present application are limited to the embodiments. On the contrary, the purpose of introducing the present application in combination with the embodiments is to cover other options or modifications that can be extended based on the claims of the present application. In order to provide a deep understanding of the present application, many specific details will be included in the following description. The present application can also be implemented without using these details. In addition, in order to avoid confusion or obscure the focus of the present application, some specific details will be omitted in the description. It should be noted that the embodiments and features in the embodiments in the present application can be combined with each other without conflict.

[0031] It should be noted that in the present description, similar reference numbers and letters represent similar items in the following drawings, so once an item is defined in one drawing, it does not need to be further defined and explained in subsequent drawings.

[0032] The technical solutions of the present application will be described in detail below in combination with the drawings. Obviously, the described embodiments are part of the embodiments of the present application, not all embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without creative labor are within the scope of protection of the present application.

[0033] In the description of the present application, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer" and the like indicate the orientation or positional relationship based on the orientation or positional relationship shown in the drawings, and are only for the purpose of facilitating the description of the present application and simplifying the description, and do not indicate or imply that the indicated device or element must have a particular orientation, be constructed and operated in a particular orientation, and therefore cannot be understood as a limitation on the present application. In addition, the terms "first", "second", "third" are only for the purpose of description, and cannot be understood as indicating or implying relative importance.

[0034] In the description of the present application, it is necessary to point out that unless otherwise explicitly specified and limited, the terms "mounting", "connection", "connecting" should be understood in a broad sense, for example, can be fixedly connected, or detachably connected, or integrally connected; can be mechanically connected, or electrically connected; can be directly connected, or indirectly connected through an intermediate medium, or the communication inside two elements. For those skilled in the art, the specific meaning of the above terms in the present application can be understood according to the specific circumstances.

[0035] In order to make the purpose, technical scheme and advantages of the present application more clear, the embodiments of the present application will be further described in detail below with reference to the drawings.

[0036] Embodiment 1

[0037] Fig. 1 is an exploded schematic view of the heat conducting member in the embodiment 1 of the present application when the heat conducting member is above the substrate.

[0038] Referring to Fig. 1, the heating device proposed in the present application is applied in a single wafer substrate processing apparatus for example, which is used to remove the unwanted photoresist on the surface of the substrate after etching process or ion implantation. The heating device is used to heat the liquid film on the surface of the substrate for removing the photoresist. In combination with Fig. 4, the substrate processing apparatus includes the heating device, a nozzle and a substrate tray 600. The substrate tray 600 is used to carry and rotate the substrate 300. The nozzle includes a first nozzle 410 and a second nozzle 420. In the embodiment, the first nozzle 410 supplies the processing liquid, such as the mixed liquid of sulfuric acid and hydrogen peroxide (SPM liquid), to the surface of the substrate 300 while the substrate tray 600 rotates the substrate 300, so as to form a continuous and uniform liquid film on the surface of the substrate 300, and the heating device heats the liquid film. The heating device includes a heat conducting member 100 and a heating film layer 200, the heating film layer 200 is arranged on the heat conducting member 100, and the heat conducting member 100 has a lower surface 1101. When the liquid film on the surface of the substrate 300 is heated, the lower surface 1101 of the heat conducting member 100 faces the surface of the substrate 300, and the projection of the lower surface 1101 on the substrate 300 covers at least the center O of the substrate 300. The heat of the heating film layer 200 is conducted to the liquid film on the surface of the substrate 300 through the lower surface 1101. The second nozzle 420 is used to supply another processing liquid, such as hot deionized water (Hot DIW), to the surface of the substrate 300 after the heating is finished and the first nozzle 410 stops spraying, so as to flush the surface of the substrate 300 and obtain a clean substrate 300. In other embodiments, the substrate 300 can also be selected to be not rotated when the nozzle supplies the processing liquid to the substrate 300. It is to be noted that the specific structure of the substrate processing apparatus is described hereinafter.

[0039] Specifically, as shown in FIG. 1, in the present example, the heat-conducting member 100 of the heating device includes a bottom plate 110, the lower surface 1101 is disposed on the bottom plate 110, the bottom plate 110 further includes an upper surface opposite to the lower surface 1101, the heating film layer 200 is disposed on the upper surface, and the heating film layer 200 can cover the entire upper surface. The lower surface 1101 faces the liquid film, and the projection of the lower surface 1101 on the substrate 300 covers at least the center O of the substrate 300. The heating film layer 200 is used to conduct heat from the upper surface of the bottom plate 110 to the liquid film through the lower surface 1101, so as to achieve a heating effect, so that the temperature of the liquid film reaches the process requirement. The present application directly heats the liquid film on the surface of the substrate 300, compared with the method of first heating the treatment liquid and then spraying the treatment liquid on the surface of the substrate 300, the present application is beneficial to improve the temperature of the liquid film on the edge of the substrate 300 and improve the edge stripping efficiency.

[0040] FIGS. 2a-2e are schematic diagrams of the orthographic projection of different shapes of the lower surface of the heat-conducting member of the present application on the plane of the substrate. In FIGS. 2a-2e, the shaded part is the orthographic projection area of the lower surface covering at least the center of the substrate, and the lower surface 1101 is marked in FIGS. 2a-2e for convenience.

[0041] In some embodiments, referring to FIG. 2a, the projection of the lower surface 1101 on the substrate 300 covers at least the center O of the substrate 300, so that the heat conduction range of the heating film layer can cover at least the central region of the substrate 300. During the rotation of the substrate 300, the treatment liquid on the substrate 300 flows from the center O of the substrate 300 to the edge of the substrate 300, so as the substrate 300 rotates, the treatment liquid in the central region of the substrate 300 after being heated flows to the edge region of the substrate 300, and finally the effect of heating the liquid film on the entire surface of the substrate 300 is achieved, thereby improving the stripping efficiency. In the example shown in FIG. 2a, the shape of the lower surface 1101 is circular, and in other examples, the shape of the lower surface 1101 can be fan-shaped, square-shaped, or triangular-shaped, etc.

[0042] In some embodiments, referring to FIGS. 2b-2e, the lower surface 1101 forms a projection on the surface of the substrate 300, which covers the center O of the substrate 300 and the edge of the substrate 300 in the radial direction of the substrate 300, so that the heat conduction range of the heating film layer 200 covers the radial region between the center O of the substrate 300 and the edge of the substrate 300 (as shown in FIGS. 2b and 2c), or so that the heat conduction range of the heating film layer 200 spans the entire surface of the substrate 300 (as shown in FIGS. 2d and 2e), thereby simultaneously heating the liquid film at the center O of the substrate 300 and the liquid film at the edge of the substrate 300. As the substrate 300 rotates, the substrate 300 moves relative to the lower surface 1101, and the liquid film on the entire substrate 300 is heated, and the temperature of the liquid film is uniformly distributed on the surface of the substrate 300.

[0043] In some embodiments, referring to FIGS. 2b-2e, the projection of the lower surface 1101 has an edge projection corresponding to the edge of the substrate 300 and a center projection corresponding to the center O of the substrate 300, and the area of the edge projection is not less than the area of the center projection, so that the heat conduction range of the heating film layer 200 can cover a relatively large area of the liquid film at the edge of the substrate 300, and the heating effect of the liquid film at the edge of the substrate 300 is enhanced. Specifically, referring to FIG. 2b, the shape of the lower surface 1101 is a sector, and referring to FIG. 2c, the shape of the lower surface 1101 is a square. In the examples shown in FIGS. 2b and 2c, the projections of the two ends of the lower surface 1101 on the substrate 300 cover the center O of the substrate 300 and the edge of the substrate 300, respectively, and the length of the lower surface 1101 is similar to the radius of the substrate 300. Referring to FIGS. 2d and 2e, the projection of the lower surface 1101 on the substrate 300 is centrosymmetric about the center O of the substrate 300. In the examples shown in FIGS. 2d and 2e, the projection of the lower surface 1101 on the substrate 300 spans the surface of the substrate 300, and the two ends of the projection of the lower surface 1101 cover the edge of the substrate 300, and the length of the lower surface 1101 is similar to the diameter of the substrate 300. It should be noted that the specific shape of the lower surface 1101 and the size of the area of the heating film layer 200 can be adjusted according to actual process requirements, and the present application does not make special limitations thereto.

[0044] FIG. 3 is a schematic view of the cross-sectional structure of the heat conduction member of the embodiment 1 of the present application when located above the substrate.

[0045] In some embodiments, referring to FIG. 3, the heating device is configured such that when the liquid film 310 on the surface of the substrate 300 is heated, the lower surface 1101 of the bottom plate 110 is in contact with the liquid film 310, so that the heat of the heating film layer 200 is sufficiently conducted to the liquid film 310. In other embodiments, the heating device can also be configured such that when the liquid film 310 on the surface of the substrate 300 is heated, there is a gap between the lower surface 1101 of the bottom plate 110 and the liquid film 310, and the heat of the heating film layer 200 can also be conducted to the liquid film 310, and the smaller the gap, the better the heating effect.

[0046] In this embodiment, continuing to refer to FIG. 3, when the liquid film 310 on the surface of the substrate 300 is heated, the lower surface 1101 is in contact with the liquid film 310, and specifically, the lower surface 1101 moves up and down relative to a reference surface of the liquid surface of the liquid film 310 by a predetermined moving distance. In this way, the heat conduction member 100 plays a role of stirring the liquid film 310 and mixing the temperature, so that the temperature of the liquid film 310 is more uniform, and the temperature of the side of the liquid film 310 facing the heat conduction member 100 is not high and the temperature of the side of the liquid film 310 contacting the substrate 300 is not low. The distance by which the lower surface 1101 moves downward relative to the reference surface is not greater than the thickness of the liquid film 310, so as to avoid the lower surface 1101 from contacting the surface of the substrate 300. The thickness of the liquid film 310 is, for example, 2 mm, and the distance by which the lower surface 1101 moves upward and the distance by which the lower surface 1101 moves downward are, for example, 1 mm respectively. The thickness of the liquid film 310 and the predetermined moving distance upward or downward can be adjusted according to actual process. It should be noted that the design height of the liquid outlet of the nozzle (specifically, the first nozzle 410 and the second nozzle 420) should satisfy that, during the process in which the lower surface 1101 moves up and down relative to the reference surface of the liquid surface of the liquid film 310 by a predetermined moving distance, the liquid outlet of the nozzle does not contact the surface of the substrate 300.

[0047] In some embodiments, referring to FIG. 1, the material of the heat conduction member 100 is quartz or sapphire, and preferably is quartz. The heating film layer 200 is a nano-electric heating film or a graphene heating film, and preferably is a nano-electric heating film. The heating film layer 200 is arranged on the heat conduction member 100 in a manner of being pasted or plated, and preferably, the heating film layer 200 of this embodiment is plated on the upper surface of the bottom plate 110 under a temperature condition of 800 ℃.

[0048] Specifically, referring to FIGS. 1 and 3, the heat conduction member 100 further comprises a cover plate 120, and the bottom plate 110 of the heat conduction member 100 comprises a bottom wall and a side wall. The heating film layer 200 is arranged on the upper surface of the bottom wall, and the side wall is sealed with the cover plate 120 through a sealing ring 130. In this way, the cover plate 120 and the bottom plate 110 jointly enclose a cavity, and the heating film layer 200 is located in the cavity, so as to prevent the heating film layer 200 from being corroded by acid gas.

[0049] In some embodiments, referring to FIG. 3, the cover plate 120 is provided with an air inlet channel 121 and an air outlet channel 122. The air inlet channel 121 is used for introducing cooling medium into the cavity, and the air outlet channel 122 is used for discharging the cooling medium in the cavity, so as to cool the heating film layer 200 after the process ends, and avoid that the residual temperature of the heating film layer 200 is too high for a long time, thereby affecting the service life. The cooling medium is, for example, inert gas or nitrogen.

[0050] In some embodiments, referring to FIG. 3, the heating film layer 200 is further configured with an electrically conductive wire (not shown) having a first end and a second end. The cover plate 120 is further provided with a wire-through joint 123, the first end of the electrically conductive wire of the heating film layer 200 is electrically connected with the heating film layer 200, and the second end of the electrically conductive wire is electrically connected with the wire-through joint 123. The wire-through joint 123 is connected with a power supply through a power supply wire.

[0051] FIG. 4 is a schematic top view of the substrate processing apparatus according to the first embodiment of the present application.

[0052] In some embodiments, referring to FIGS. 3 and 4, the substrate processing apparatus according to the present application further comprises a cleaning device 700, a swing arm 500, a rotary drive part, and a lifting drive part (not shown). The cleaning device 700 is used to clean the lower surface 1101 of the base plate 110, the swing arm 500 has a free end 501 and a fixed end 502, and the heat-conducting member 100 and the nozzles (specifically, the first nozzle 410 and the second nozzle 420) are jointly arranged on the free end 501, wherein the nozzles can also be integrated on the heating device, and the first nozzle 410 has one or two. In the present embodiment, the first nozzle 410 has one. When the first nozzle 410 has one, the first nozzle 410 supplies SPM liquid to the surface of the substrate 300. When the first nozzle 410 has two, the first nozzle 410 comprises a third nozzle and a fourth nozzle (not shown) arranged at intervals, the third nozzle supplies hydrogen peroxide solution to the surface of the substrate 300, and the fourth nozzle supplies sulfuric acid solution to the surface of the substrate 300. The rotary drive part is used to drive the free end 501 of the swing arm 500 to rotate between the substrate tray 600 and the cleaning device 700 with the fixed end 502 as the rotation center, and the lifting drive part is used to drive the swing arm 500 to move up and down, so that the heat-conducting member 100 moves up and down together with the swing arm 500, thereby achieving the purpose of moving the lower surface 1101 up and down relative to the reference surface of the liquid film 310 by a predetermined moving distance.

[0053] Continuing to refer to FIGS. 3 and 4, the cleaning device 700 is arranged on one side of the substrate tray 600. Since the lower surface 1101 is located above the liquid film 310 or directly contacts the liquid film 310 during the heating process, the lower surface 1101 is prone to attaching an acid mist after the heating is completed. Therefore, after the heating is completed, the free end 501 of the swing arm 500 can be driven by the rotary drive part to rotate from the substrate tray 600 to the cleaning device 700, so as to clean the lower surface 1101 in a timely manner. The cleaning liquid contained in the cleaning device 700 is, for example, pure water or deionized water.

[0054] In the present embodiment, referring to FIG. 2d, when the projection of the lower surface 1101 on the substrate 300 spans the surface of the substrate 300 and both ends of the projection of the lower surface 1101 cover the edges of the substrate 300, the projection of the first nozzle 410 on the substrate 300 covers the center O of the substrate 300 or deviates from the center O of the substrate 300. As shown in FIG. 2d, when the projection of the first nozzle 410 on the substrate 300 deviates from the center O of the substrate 300, one set of first nozzles 410 can be arranged on each of the left and right sides of the lower surface 1101, and when the substrate 300 rotates in a predetermined direction, for example, a clockwise direction, the processing liquid discharged by each set of first nozzles 410 can mainly be carried to the lower side of the lower surface 1101 in the direction indicated by the arrow for heating. Each set of first nozzles 410 has one or two, and the effect of each set of first nozzles 410 having one or two can be referred to the foregoing description.

[0055] With reference to FIGS. 1, 3 and 4, the process of heating the liquid film 310 based on the substrate processing apparatus of the present embodiment is described as follows:

[0056] Step one: the substrate tray 600 drives the substrate 300 to rotate, and the rotation speed of the substrate 300 is, for example, 100 rpm to 500 rpm, and preferably 200 rpm;

[0057] Step two: the swing arm 500 moves above the substrate 300 and then descends to a process position, for example, a position 1 mm away from the liquid surface of the liquid film 310;

[0058] Step three: the first nozzle 410 supplies the processing liquid to the surface of the substrate 300 to form the liquid film 310 on the surface of the substrate 300; in this step, the first nozzle 410 has one, and the first nozzle 410 supplies the SPM liquid to the surface of the substrate 300;

[0059] Step four: heating is started, for example, the heating film layer 200 is powered on, and the heat of the heating film layer 200 is conducted to the liquid film 310 through the bottom plate 110 of the heat conduction member 100 to increase the temperature of the liquid film 310;

[0060] Step five: the swing arm 500 drives the heat conduction member 100 to move up and down, and the lower surface 1101 of the heat conduction member 100 (i.e., the lower surface 1101 of the bottom plate 110) moves up and down relative to the reference surface at a predetermined distance;

[0061] Step six: after a predetermined time, the heating of the liquid film 310 is ended;

[0062] Step seven: the first nozzle 410 stops supplying the processing liquid (specifically, the SPM liquid) to the surface of the substrate 300;

[0063] Step eight: the second nozzle 420 sprays hot deionized water to the surface of the substrate 300 to rinse the surface of the substrate 300. The temperature of the hot deionized water is, for example, 40-80°C, preferably 70°C;

[0064] Step nine: after the rinsing, the swing arm 500 is removed. In this step, the swing arm 500 can be moved to the cleaning device 700 to clean the lower surface 1101.

[0065] Step ten: the next process is performed on the surface of the substrate 300.

[0066] In this embodiment, after step seven, cooling medium, such as inert gas or nitrogen, can be introduced into the cavity through the gas inlet channel 121 to cool the heated film layer 200.

[0067] In addition, when the first nozzle 410 has two, i.e., the first nozzle 410 includes a third nozzle and a fourth nozzle, the process is different from the above steps in that: the third nozzle first supplies the hydrogen peroxide solution to the surface of the substrate 300, so that the hydrogen peroxide solution covers the entire surface of the substrate 300, then the fourth nozzle supplies the sulfuric acid solution to the surface of the substrate 300, so that an SPM liquid film is formed on the surface of the substrate 300, then the heating is started to increase the temperature of the SPM liquid film. During the heating process, the heating method of step five can be adopted. After heating for a predetermined time, the fourth nozzle stops supplying the sulfuric acid solution to the surface of the substrate 300, then the heating is stopped, and finally the third nozzle stops supplying the hydrogen peroxide solution to the surface of the substrate 300.

[0068] Embodiment 2:

[0069] Figure 5 is a schematic diagram of the front projection of the heating device and the nozzle of the embodiment 2 of the present application on the plane of the substrate. For convenience, the heating device 100' and the nozzle 410' are marked in Figure 5.

[0070] The substrate processing apparatus of this embodiment 2 includes a substrate tray (not shown), a nozzle 410' and a heating device 100'. The substrate tray is used to carry and rotate the substrate 300 in a first direction W, which is either clockwise or counterclockwise, in this example, the first direction W is clockwise. The nozzle 410' and the heating device 100' are arranged in sequence along the first direction W. When the substrate 300 rotates in the first direction W, the nozzle 410' supplies the processing liquid to the surface of the substrate 300 to form a continuous and uniform liquid film on the surface of the substrate 300. The heating device 100' is used to heat the liquid film, and the heating device 100' has a first end 101' and a second end 102'. When the liquid film on the surface of the substrate 300 is heated, the nozzle 410' and the heating device 100' move together above the substrate 300, the projection of the first end 101' of the heating device 100' on the substrate 300 covers the center O of the substrate 300, the projection of the second end 102' of the heating device 100' on the substrate 300 covers the edge of the substrate 300, and the projection of the nozzle 410' on the substrate 300 deviates from the center O of the substrate 300, that is, the nozzle 410' is offset. In this embodiment, the heat conduction range of the heating device 100' covers the radial region between the center O of the substrate 300 and the edge of the substrate 300, and the liquid film on the entire substrate 300 is heated as the substrate 300 rotates.

[0071] In some embodiments, referring to FIG. 5, the nozzle 410' is located outside the side wall of the heating device 100' and close to the first end 101'. In other embodiments, the nozzle 410' can also be located close to the middle of the side wall of the heating device 100' in the length direction of the side wall of the heating device 100'. It should be noted that the design position of the nozzle 410' in the length direction of the side wall of the heating device 100' is determined according to the specific process, which is not limited in this application.

[0072] In some embodiments, continuing to refer to FIG. 5, the nozzle 410' has a horizontal distance L between the center and the center O of the substrate 300, and the ratio L / R of the horizontal distance L to the radius R of the substrate 300 can be in the range of 0 < L / R < 2 / 3. As an example, in the process of heating the liquid film, the horizontal distance L from the center of the nozzle 410' to the center O of the substrate 300 is in the range of 0 mm < L < 80 mm, preferably 30 mm < L < 60 mm, for example 50 mm. Wherein, the radius R of the substrate 300 is 150 mm.

[0073] As shown in Fig. 5, for the convenience of illustrating the effect of the offset nozzle 410', a trajectory H of the processing liquid discharged by the nozzle 410' is shown by a solid arrow in Fig. 5. During the heating of the liquid film on the surface of the substrate 300, the substrate 300 rotates around the center O of the substrate 300 in the first direction W, and the offset nozzle 410' discharges the processing liquid to the surface of the substrate 300, and the processing liquid spreads around. Since the nozzle 410' and the heating device 100' are arranged in sequence along the first direction W, as the substrate 300 rotates in the first direction W, most of the processing liquid discharged by the nozzle 410' will be brought under the heating device 100' to be heated along the first direction W, which is conducive to improving the utilization rate of the heating device 100'.

[0074] In some embodiments, the heating device 100' in Embodiment 2 can include the heat-conducting member 100 and the heating film layer 200 in Embodiment 1, and the nozzle 410' can be the first nozzle 410 in Embodiment 1. In other embodiments, the heating device 100' can include the heat-conducting member and a heating lamp tube, and the light emitted by the heating lamp tube passes through the heat-conducting member to reach the liquid film on the surface of the substrate to heat the liquid film.

[0075] Finally, it should be noted that: the above embodiments are only used to illustrate the technical solutions of the present application, and not to limit them; although the present application has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that: it can still modify the technical solutions recorded in the foregoing embodiments, or make equivalent replacement to part or all of the technical features; and these modifications or replacements do not make the essence of the corresponding technical solutions deviate from the scope of the technical solutions of the embodiments of the present application.

Claims

1. A heating device for heating a liquid film on the surface of a substrate, characterized in that, include: A heat-conducting element and a heating film layer, wherein the heating film layer is disposed on the heat-conducting element, and the heat-conducting element has a lower surface; The heating device is configured such that when the liquid film on the surface of the substrate is heated, the lower surface of the heat-conducting element faces the surface of the substrate, and the projection of the lower surface on the substrate at least covers the center of the substrate, and the heating film layer is used to conduct heat to the liquid film through the lower surface.

2. The heating device according to claim 1, characterized in that, The projection of the lower surface onto the substrate covers the edge of the substrate.

3. The heating device according to claim 2, characterized in that, The projection of the lower surface has an edge projection corresponding to the edge of the substrate and a center projection corresponding to the center of the substrate, wherein the area of ​​the edge projection is not less than the area of ​​the center projection.

4. The heating device according to claim 3, characterized in that, The projection of the lower surface onto the substrate is centrally symmetrical about the center of the substrate.

5. The heating device according to claim 1, characterized in that, The heating device is further configured such that when the liquid film on the surface of the substrate is heated, the lower surface contacts the liquid film.

6. The heating device according to claim 1, characterized in that, The heating device is further configured such that, when heating the liquid film on the surface of the substrate, the lower surface moves up and down relative to the reference surface by a predetermined moving distance, with the liquid surface of the liquid film as the reference surface.

7. The heating device according to claim 1, characterized in that, The heating film layer is a nano-electrothermal film or a graphene heating film.

8. The heating device according to claim 1, characterized in that, The heating film layer is applied to the heat-conducting component by means of adhesive bonding or coating.

9. The heating device according to claim 1, characterized in that, The heat-conducting component is made of quartz or sapphire.

10. The heating device according to claim 1, characterized in that, The heat-conducting component includes a base plate, the lower surface is disposed on the base plate, the base plate also includes an upper surface opposite to the lower surface, and the heating film layer is disposed on the upper surface.

11. The heating device according to claim 10, characterized in that, The heat-conducting component also includes: A cover plate, together with the base plate, forms a cavity, and the heating film layer is located inside the cavity; The cover plate is provided with an air intake channel and an exhaust channel. The air intake channel is used to introduce cooling medium into the cavity, and the exhaust channel is used to discharge the cooling medium from the cavity.

12. The heating device according to claim 11, characterized in that, Also includes: A conductive wire having a first end and a second end; The cover plate is also provided with a wire connector, the first end of the conductive wire is electrically connected to the heating film layer, and the second end of the conductive wire is electrically connected to the wire connector.

13. A substrate processing apparatus, characterized in that, Also includes: The heating device according to any one of claims 1 to 12; A cleaning device for cleaning the lower surface of the heat-conducting component.

14. The substrate processing apparatus according to claim 13, characterized in that, Also includes: A substrate tray is used to support and rotate the substrate. A nozzle is used to supply processing liquid to the surface of the substrate and form a liquid film on the surface of the substrate; A swing arm has a free end and a fixed end, and the heat-conducting component is disposed at the free end; A rotary drive unit is used to drive the free end of the swing arm to rotate between the substrate tray and the cleaning device with the fixed end as the rotation center; The lifting drive unit is used to drive the swing arm to move up and down.

15. A substrate processing apparatus, characterized in that, include: A substrate tray is used to support and drive the substrate to rotate in a first direction; A nozzle is used to supply processing liquid to the surface of the substrate and form a liquid film on the surface of the substrate; A heating device for heating the liquid film, the heating device having a first end and a second end; The nozzle and the heating device are arranged sequentially along the first direction; The substrate processing apparatus is configured such that, when the liquid film on the surface of the substrate is heated, the projection of the first end of the heating device on the substrate covers the center of the substrate, the projection of the second end of the heating device on the substrate covers the edge of the substrate, and the projection of the nozzle on the substrate is offset from the center of the substrate.

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