Method for cleaning semiconductor device

Abstract

Disclosed in the present application is a method for cleaning a semiconductor device. The method comprises the steps of: a first cleaning stage, during which the temperature is controlled within a first temperature range, and a first cleaning gas is introduced into a reaction chamber, wherein the first cleaning gas at least comprises a fluorine-containing gas and a first carrier gas; and a second cleaning stage, during which the temperature is controlled within a second temperature range, and a second cleaning gas is introduced into the reaction chamber, wherein the second cleaning gas at least comprises a second carrier gas and an oxidizing gas or a reducing gas. According to the present application, carbon by-products generated on an electrostatic heating plate in a plasma enhanced chemical vapor deposition process are effectively removed, and the effective adsorption of the electrostatic heating plate on a wafer during the process is ensured.

Description

Cleaning method of semiconductor equipment

[0001]

[0002] This application claims priority to Chinese Patent Application No. 202411023925.8, filed on July 28, 2024, the entire contents of which are incorporated herein by reference.

[0003] The present application relates to the technical field of semiconductor process, in particular to a cleaning method of semiconductor equipment.

[0004] In the related art, in a plasma enhanced chemical vapor deposition (PECVD) process, carbon by-products formed in an amorphous carbon process can easily be adsorbed and infiltrated into the interior of a ceramic electrostatic heating disc, causing the electrostatic adsorption force of the heating disc to change, which can greatly affect the entire process, causing the wafer edge to not be well adsorbed by the electrostatic heating disc, and process film layers to be plated to the back of the wafer.

[0005] Therefore, the present application provides a cleaning method of semiconductor equipment to solve the problem of how to remove carbon by-products on the surface of an electrostatic heating disc in the prior art.

[0006] To solve the above technical problems, the technical scheme provided by the present application is to provide a cleaning method of semiconductor equipment, comprising:

[0007] performing a first cleaning stage, wherein the temperature is controlled within a first temperature range, a first cleaning gas is introduced into the reaction chamber, and the first cleaning gas at least includes a fluorine-containing gas and a first carrier gas;

[0008] performing a second cleaning stage, wherein the temperature is controlled within a second temperature range, a second cleaning gas is introduced into the reaction chamber, and the second cleaning gas at least includes a second carrier gas and an oxidizing gas or a reducing gas.

[0009] In an embodiment, in the first cleaning stage, the first temperature range is 200-450°C.

[0010] In an embodiment, the fluorine-containing gas includes at least one of nitrogen trifluoride, perfluorobutadiene, octafluorocyclobutane, difluoroacetylene, and sulfur hexafluoride.

[0011] In an embodiment, the flow rate of the fluorine-containing gas is 1000-2000sccm.

[0012] In an embodiment, the first carrier gas and the second carrier gas each include at least one of nitrogen, argon, and helium. ​​​​

[0013] In an embodiment, the flow rate of the first carrier gas and the flow rate of the second carrier gas are both 2500sccm-3500sccm.

[0014] In an embodiment, the first cleaning gas further comprises a functional gas, the functional gas comprising at least one of oxygen, ozone, carbon dioxide, water vapor, chlorine, fluorine, nitrogen dioxide, nitrous oxide, and hydrogen peroxide; the flow rate of the functional gas being 200sccm-5000sccm.

[0015] In an embodiment, the first cleaning gas further comprises a functional gas, the functional gas comprising hydrogen; the flow rate of the functional gas being 200sccm-5000sccm.

[0016] In an embodiment, in the second cleaning phase, the second temperature range is 500℃-700℃.

[0017] In an embodiment, the oxidizing gas comprises at least one of oxygen, carbon dioxide, water vapor, chlorine, fluorine, ozone, nitrogen dioxide, nitrous oxide, and hydrogen peroxide.

[0018] In an embodiment, the flow rate of the oxidizing gas is 200sccm-5000sccm.

[0019] In an embodiment, the reducing gas comprises hydrogen.

[0020] In an embodiment, the flow rate of the reducing gas is 200sccm-5000sccm.

[0021] In an embodiment, the second carrier gas comprises at least one of nitrogen, argon, and helium.

[0022] In an embodiment, the flow rate of the second carrier gas is 2500sccm-3500sccm.

[0023] In an embodiment, the first cleaning time of the first cleaning phase is 10 minutes-300 minutes, and the second cleaning time of the second cleaning phase is 10 minutes-300 minutes.

[0024] In an embodiment, the radio frequency power of the first cleaning phase is 500W-6000W, and the radio frequency power of the second cleaning phase is 500W-6000W.

[0025] In an embodiment, before the first cleaning phase, between the first cleaning phase and the second cleaning phase, and after the second cleaning phase, further comprising:

[0026] A third cleaning gas is introduced into the reaction chamber, the third cleaning gas including at least one of argon, nitrogen and helium, and the flow rate of the third cleaning gas being 3000-6000sccm.

[0027] The semiconductor equipment cleaning method provided by the application has the following advantages: different from the prior art, the semiconductor equipment cleaning method provided by the application is used for cleaning an electrostatic heating disc in a semiconductor equipment, and the semiconductor equipment includes the electrostatic heating disc and a reaction chamber. The method includes: performing a first cleaning stage, wherein the temperature is controlled to be within a first temperature range, a first cleaning gas is introduced into the reaction chamber, and the first cleaning gas includes at least a fluorine-containing gas and a first carrier gas; and performing a second cleaning stage, wherein the temperature is controlled to be within a second temperature range, a second cleaning gas is introduced into the reaction chamber, and the second cleaning gas includes at least a second carrier gas and an oxidizing gas or a reducing gas. The carbon by-products generated on the electrostatic heating disc in a plasma enhanced chemical vapor deposition process are effectively removed under different stages and different temperature conditions, so that the effective adsorption of the electrostatic heating disc to a wafer in the process is ensured, and the service life of the electrostatic heating disc is improved. BRIEF DESCRIPTION OF DRAWINGS

[0028] In order to more clearly illustrate the technical solutions in the embodiments of the application, the following will briefly introduce the drawings needed to be used in the embodiment description. Obviously, the drawings in the following description are only some embodiments of the application, and other drawings can be obtained by those skilled in the art without any creative effort on the basis of these drawings.

[0029] Fig. 1 is a flow chart of the semiconductor equipment cleaning method provided by an embodiment of the application;

[0030] Fig. 2 is a process flow chart of the semiconductor equipment cleaning method provided by the application;

[0031] Fig. 3 is a structural diagram of the semiconductor equipment provided by the application;

[0032] Fig. 4 is a contrast schematic diagram of the electrostatic heating disc before and after cleaning provided by the application; wherein, (a) is the electrostatic heating disc before cleaning, and (b) is the electrostatic heating disc after cleaning;

[0033] Fig. 5 is a contrast schematic diagram of the current curve of the electrostatic heating disc before and after cleaning provided by the application; wherein, I1 indicates the current curve of the electrostatic heating disc before cleaning, and I2 indicates the current curve of the electrostatic heating disc after cleaning.

DETAILED DESCRIPTION

[0034] With reference to the drawings of the embodiments of the present application, the technical solutions in the embodiments of the present application will be clearly and completely described. Obviously, the described embodiments are only a part of embodiments of the present application, but not all embodiments of the present application. Based on the embodiments of the present application, all other embodiments obtained by a person of ordinary skill in the art without creative effort are within the scope of protection of the present application.

[0035] The terms “first”, “second”, “third”, etc. are used only for the purpose of description, and cannot be understood as indicating or implying relative importance or implicitly indicating the number of the technical features indicated. Therefore, the features defined with “first”, “second”, etc. can explicitly or implicitly include at least one of the features. All directional indications (such as up, down, left, right, front, back, etc.) in the embodiments of the present application are only used to explain the relative position relationship, movement condition, etc. between components in a certain posture (as shown in the drawings), and if the certain posture changes, the directional indications also change accordingly. In addition, the terms “include” and “have” and any variations thereof are intended to cover non-exclusive inclusion. For example, a process, method, system, product or device including a series of steps or units is not limited to the listed steps or units, but can optionally include steps or units not listed, or can optionally include other steps or units inherent to the process, method, product or device.

[0036] In this document, the term “embodiment” means that a particular feature, structure, or characteristic described in connection with the embodiment can be included in at least one embodiment of the present application. The appearance of this phrase in various places in the specification does not necessarily all refer to the same embodiment, nor is it necessarily mutually exclusive of other embodiments. It is explicitly and implicitly understood that the embodiments described herein can be combined with other embodiments.

[0037] During the research of the present application, it is found that the electrostatic heating disc is used to adsorb and coat the wafer in the PECVD carbon process (Plasma Enhanced Chemical Vapor Deposition). During the amorphous carbon process, the carbon by-products formed in the process can easily be adsorbed and infiltrated into the interior of the electrostatic heating disc, causing the electrostatic adsorption force of the electrostatic heating disc to change, which greatly affects the entire process, causing the wafer edge to not be well adsorbed by the heating disc, and the process film layer to be coated on the back of the wafer.

[0038] To solve the above problems, the application provides a semiconductor equipment cleaning method, which uses a two-component gas or a multi-component gas to effectively remove carbon by-products generated on the electrostatic heating plate in the PECVD process at a certain temperature, thereby ensuring the effective adsorption of the electrostatic heating plate on the wafer during the film coating process.

[0039] Referring to FIGS. 1-3, FIG. 1 is a flow chart of a semiconductor equipment cleaning method according to an embodiment of the application; FIG. 2 is a process flow diagram of the semiconductor equipment cleaning method according to the application; and FIG. 3 is a structural diagram of a semiconductor equipment according to the application.

[0040] The semiconductor equipment cleaning method according to the application includes a reaction chamber 11 and an electrostatic heating plate 10 in the reaction chamber 11, and is used to clean the electrostatic heating plate 10.

[0041] The semiconductor equipment cleaning method according to the application can include the following steps:

[0042] S1: performing a first cleaning stage, wherein the temperature is controlled within a first temperature range, a first cleaning gas is introduced into the reaction chamber 11, and the first cleaning gas at least includes a fluorine-containing gas and a first carrier gas.

[0043] Specifically, the first cleaning gas can be a plasma etching gas 12, and the plasma etching gas 12 is introduced into the reaction chamber 11 at a first cleaning time and a first preset flow rate, so as to clean the electrostatic heating plate 10 with the plasma etching gas 12.

[0044] For ease of illustration, the application illustrates the cleaning process by reacting the plasma etching gas 12 with the carbon film layer 20 of the electrostatic heating plate 10. It should be noted that the carbon film layer 20 can represent the carbon by-products as described above.

[0045] In the first cleaning stage, the plasma etching gas 12 and the carbon film layer 20 can perform depolymerization and etching reactions to clean the carbon by-products remaining on the electrostatic heating plate 10.

[0046] Specifically, the reaction chamber 11 can be maintained at a first temperature range by a heater 30, and then a certain amount and flow rate of plasma etching gas 12 is introduced into the reaction chamber 11 by a mass flow controller 40 (MFC).

[0047] In an embodiment, in the first cleaning stage, the first temperature range can be 200-450°C, for example, the temperature of the electrostatic heating plate 10 can be set to 200°C, 250°C, 300°C, 350°C, 400°C or 450°C, etc. by the heater 30.

[0048] In an embodiment, the first preset time can be 10 minutes to 300 minutes, for example, the cleaning time of the first cleaning stage can be set to 10 minutes, 30 minutes, 60 minutes, 100 minutes, 120 minutes, 180 minutes, 240 minutes or 300 minutes, etc.

[0049] In an embodiment, the radio frequency power of the plasma generator 50 in the first cleaning stage can be set to 500W-6000W. In some embodiments, the radio frequency power of the plasma generator 50 in the first cleaning stage can be set to 500W, 1000W, 2000W, 3000W, 4000W, 5000W or 6000W, etc.

[0050] In the embodiments provided in the application, the etching gas 12 of the plasma can include at least two different gases, one of which is a fluorine-containing gas, and the other is a first carrier gas.

[0051] In an embodiment, the fluorine-containing gas can include at least one of nitrogen trifluoride (NF3), perfluorobutadiene (C4F6), octafluorocyclobutane (C4F8), difluoroacetylene (C2F2) or sulfur hexafluoride (SF6).

[0052] In an embodiment, the flow rate of the fluorine-containing gas can be 1000sccm-2000sccm (standard cubic centimeter per minute). For example, in this embodiment, NF3 can include 1000sccm, 1300sccm, 1500sccm, 1800sccm or 2000sccm.

[0053] In an embodiment, the first carrier gas can include one or more of nitrogen (N2), argon (Ar), helium (He), etc. in combination. The flow rate of the first carrier gas can be 2500sccm-3500sccm. For example, in this embodiment, Ar can be used as the first carrier gas at a flow rate of 2500sccm, 2800sccm, 3000sccm, 3200sccm or 3500sccm.

[0054] Further, the first cleaning gas can further include a functional gas, and the functional gas can include at least one of oxygen, ozone, carbon dioxide, water vapor, chlorine, fluorine, nitrogen dioxide, nitrous oxide, and hydrogen peroxide; in addition, the functional gas can further include hydrogen. That is, the first cleaning gas is formed by combining the fluorine-containing gas, the first carrier gas, and the functional gas. The functional gas can be an oxidizing gas (e.g., oxygen (O2), ozone (O3), carbon dioxide, water vapor, chlorine, fluorine, nitrogen dioxide, nitrous oxide, and hydrogen peroxide, etc.) or a reducing gas (e.g., hydrogen (H2)), but it should be noted that the oxidizing gas and the reducing gas need to be added separately in different steps, and cannot be added at the same time or exist in the same cleaning step at the same time, in order to avoid the reaction between the oxidizing gas and the reducing gas. The flow rate of the functional gas can be 200 sccm to 5000 sccm. For example, O2 at 200 sccm, 500 sccm, 1000 sccm, 2000 sccm, 3000 sccm, or 5000 sccm can be used as the functional gas in the present embodiment.

[0055] For example, in the embodiments provided by the present application, the etching gas 12 combination of the plasma can be:

[0056] 1) NF3+N2, NF3+Ar, or NF3+N2+Ar, that is, nitrogen trifluoride NF3 is combined with the carrier gas, and other fluorine-containing gases such as perfluorobutadiene (C4F6), octafluorocyclobutane (C4F8), difluoroacetylene (C2F2), or sulfur hexafluoride (SF6) can also be used.

[0057] 2) NF3+N2+O2 or NF3+N2+O2+Ar, that is, nitrogen trifluoride NF3, a functional gas, and a carrier gas are combined. The fluorine-containing gas can also use other fluorine-containing gases such as perfluorobutadiene (C4F6), octafluorocyclobutane (C4F8), difluoroacetylene (C2F2), or sulfur hexafluoride (SF6). In addition to using oxygen, the functional gas can also use other oxygen-containing gases such as ozone, carbon dioxide, water vapor, chlorine, fluorine, nitrogen dioxide, nitrous oxide, and hydrogen peroxide.

[0058] 3) NF3+H2+Ar, that is, nitrogen trifluoride NF3, a functional gas, and a carrier gas are combined. The fluorine-containing gas can also use other fluorine-containing gases such as perfluorobutadiene (C4F6), octafluorocyclobutane (C4F8), difluoroacetylene (C2F2), or sulfur hexafluoride (SF6). The functional gas can be hydrogen and the like.

[0059] The first cleaning stage of the present application uses fluorine-containing plasma to effectively depolymerize and etch the carbon film layer 20 formed by the PECVD process, and in combination with oxygen and other functional gas plasma, effectively removes amorphous carbon and other possible impurities, thereby improving the cleaning efficiency.

[0060] S2: performing a second cleaning stage, wherein the temperature is controlled within a second temperature range, and a second cleaning gas is introduced into the reaction chamber 11, the second cleaning gas at least including a second carrier gas and an oxidizing gas or a reducing gas.

[0061] Specifically, in the second cleaning stage, the second temperature range is 500-700°C. The electrostatic heating plate 10 can be continuously heated by the heater 30 to a temperature within the second temperature range, such as 500°C, 550°C, 600°C, 650°C or 700°C, to start cleaning the surface of the electrostatic heating plate 10 in the second cleaning stage. The reaction chamber 11 is introduced into the reaction chamber 11 with a second predetermined flow rate of the oxidizing gas or the reducing gas and the second carrier gas.

[0062] In an embodiment, the second cleaning time of the second cleaning stage can be 10-300 minutes. For example, the cleaning time of the second cleaning stage can be set to 10 minutes, 30 minutes, 60 minutes, 100 minutes, 120 minutes, 180 minutes, 240 minutes or 300 minutes, etc.

[0063] In an embodiment, the RF power of the plasma generator 50 in the second cleaning stage can be 500-6000W. In some embodiments, the RF power of the plasma generator 50 in the second cleaning stage can be set to 500W, 1000W, 2000W, 3000W, 4000W, 5000W or 6000W, etc.

[0064] In an embodiment, the second carrier gas includes at least one of nitrogen, argon and helium. The flow rate of the second carrier gas can be 2500-3500sccm. For example, Ar at 2500sccm, 2800sccm, 3000sccm, 3200sccm or 3500sccm can be used as the second carrier gas in the present embodiment.

[0065] In one embodiment, the oxidizing gas of the second cleaning stage can include at least one of oxygen (O2), carbon dioxide (CO2), water vapor (H2O), chlorine (Cl2), fluorine (F2), ozone (O3), nitrogen dioxide (NO2), nitrous oxide (N2O), and hydrogen peroxide (H2O2). The flow rate of the oxidizing gas can be 200 sccm to 5000 sccm. For example, in this embodiment, 200 sccm, 500 sccm, 1000 sccm, 2000 sccm, 3000 sccm, 4000 sccm, or 5000 sccm of O2may be provided as the oxidizing gas.

[0066] In one embodiment, the reducing gas of the second cleaning stage can include hydrogen. The flow rate of the reducing gas can be 200 sccm to 5000 sccm, for example, 200 sccm, 500 sccm, 1000 sccm, 2000 sccm, 3000 sccm, 4000 sccm, or 5000 sccm, and the like, which can be selected as needed.

[0067] The second cleaning stage is performed at a higher temperature, which can more thoroughly remove the small amount of carbon film layer 20 remaining on the surface of the electrostatic chuck 10. The remaining carbon film layer 20 reacts with oxygen to form a volatile gas such as carbon monoxide or carbon dioxide, which is then removed through an exhaust system (not shown), thereby achieving thorough cleaning of the electrostatic chuck 10.

[0068] For example, in the case of carbon byproducts, in the process of cleaning the carbon byproducts in this embodiment, the reaction mode can include at least one of the following:

[0069] (1) The oxidation reaction between oxygen O2and carbon can generate carbon dioxide (CO2) or carbon monoxide (CO), as shown in the following expression, and the generated carbon dioxide or carbon monoxide can be directly removed through an exhaust system. C + O2---> CO2 2C + O2---> 2CO

[0070] (2) The oxidation reaction between carbon dioxide CO2and carbon can generate carbon monoxide (CO), and the generated carbon monoxide can be directly removed through an exhaust system. As shown in the following expression: CO2+ C---> 2CO

[0071] (3) The oxidation reaction between water vapor H2O and carbon can generate carbon monoxide (CO) and hydrogen (H2), and the generated carbon monoxide or hydrogen can be directly removed through an exhaust system. As shown in the following expression: H2O + C---> CO + H2

[0072] (4) Oxidation reaction between chlorine gas Cl2 and carbon can generate carbon tetrachloride (CCl4), which can be directly extracted through the exhaust system. As shown in the following expression: 2Cl2+C--->CCl4

[0073] (5) Oxidation reaction between fluorine gas F2 and carbon can generate carbon tetrafluoride (CF4), which can be directly extracted through the exhaust system. As shown in the following expression: 2F2+C--->CF4

[0074] (6) Oxidation reaction between ozone O3 and carbon can generate carbon dioxide (CO2) and oxygen (O2), which can be directly extracted through the exhaust system, as shown in the following expression: 2O3+C--->CO2+O2

[0075] (7) Oxidation reaction between nitrogen dioxide NO2 and carbon can generate carbon dioxide (CO2) and nitrogen monoxide (NO), which can be directly extracted through the exhaust system, as shown in the following expression: 2NO2+C--->CO2+2NO

[0076] (8) Oxidation reaction between nitrous oxide N2O and carbon can generate carbon monoxide (CO) and nitrogen (N2), which can be directly extracted through the exhaust system, as shown in the following expression: N2O+C--->CO+N2

[0077] (9) Oxidation reaction between hydrogen peroxide H2O2 and carbon can generate carbon dioxide (CO2) and water (H2O), which can be directly extracted through the exhaust system, as shown in the following expression: 2H2O2+C--->CO2+2H2O

[0078] (10) Reduction reaction between hydrogen H2 and carbon can generate methane (CH4), which can be directly extracted through the exhaust system, as shown in the following expression: 2H2+C--->CH4

[0079] In another embodiment, the cleaning method of the semiconductor device 1 can further comprise:

[0080] In an embodiment, before the first cleaning stage, between the first cleaning stage and the second cleaning stage, and after the second cleaning stage, it can further comprise:

[0081] Introducing a third cleaning gas into the reaction chamber 11.

[0082] The third cleaning gas includes at least one of argon, nitrogen and helium, and the flow rate of the third cleaning gas is 3000-6000sccm. For example, the flow rate of the third cleaning gas in the embodiment is 3000sccm, 3500sccm, 4000sccm, 4500sccm, 5000sccm or 6000sccm. In the embodiment, the third cleaning gas can be used for overall purging before and after the cleaning processes in the first cleaning stage and the second cleaning stage, i.e., the third cleaning gas is used for overall purging the reaction chamber 11 before step S1, between step S1 and step S2, and after step S2. The process of overall purging by the third cleaning gas is mainly used for purging the impurities and excess gas in the reaction chamber 11 where the electrostatic heating plate 10 is located, so as to facilitate the cleaning processes in the first cleaning stage and the second cleaning stage.

[0083] The cleaning time of the third cleaning gas in the step can be set as required, for example, 10 minutes, 30 minutes, 60 minutes, 100 minutes, 120 minutes, 180 minutes, 240 minutes or 300 minutes, etc. The other steps in the embodiment are the same as those in the embodiment shown in FIGS. 1-2, and details are described above, which will not be described here.

[0084] The implementation conditions of the semiconductor device 1 cleaning method can be as follows:

[0085] When the electrostatic heating plate 10 fails to adsorb the wafer 60, the cleaning process of the electrostatic heating plate 10 can be performed by the semiconductor device 1 cleaning method. The cleaning process can be performed at a regular time or before the wafer 60 processing process, which is not limited in the application.

[0086] Before the cleaning process, the temperature of the heating plate can be maintained at 300-500°C, for example, 300°C, 350°C, 400°C, 450°C or 500°C.

[0087] It is found by practice that the semiconductor device 1 cleaning method can effectively clean the carbon film layer 20 on the surface of the electrostatic heating plate 10 after the above two stages and the combined cleaning of the various gases, so that the electrostatic heating plate 10 can well adsorb the wafer 60, and no film layer is found on the back edge of the wafer 60.

[0088] Please refer to Fig. 4 and Fig. 5, Fig. 4 is a contrast schematic diagram of the electrostatic heating plate before and after cleaning provided by the present application; wherein (a) is the electrostatic heating plate before cleaning, (b) is the electrostatic heating plate after cleaning; Fig. 5 is a contrast schematic diagram of the current curve of the electrostatic heating plate before and after cleaning provided by the present application; wherein I1 indicates the current curve of the electrostatic heating plate before cleaning, I2 indicates the current curve of the electrostatic heating plate after cleaning.

[0089] As shown in Fig. 4, wherein the part (a) of Fig. 4 is the electrostatic heating plate 10 before cleaning, it can be seen that there is a carbon film layer on the back of the wafer 60. After the combined cleaning of the gas and the process stage by the above cleaning method, no process film layer is found to be plated on the back, as shown in the part (b) of Fig. 4.

[0090] The current curve of the electrostatic heating plate with good adsorption and the electrostatic heating plate with poor adsorption is shown in Fig. 5. As shown in the current curve I1 of Fig. 5, before cleaning, the electrostatic heating plate 10 requires a larger current and the current curve fluctuates more. If the current is too large, the electrostatic heating plate 10 can be rapidly heated, and at the same time, too much heat can be generated, which can cause the electrostatic heating plate 10 to overheat, thereby reducing the heating efficiency. At the same time, too large current can cause the electrostatic heating plate 10 to overheat, accelerate the aging of the electrostatic heating plate 10, and shorten the service life of the electrostatic heating plate 10; and too large current can cause energy consumption to increase, increasing the manufacturing cost. In addition, too large current can cause the temperature of the electrostatic heating plate 10 to fluctuate greatly, affecting the thermal stability.

[0091] As shown in the curve I2 of Fig. 5, after the combined cleaning of the gas and the process stage by the above cleaning method, the current of the electrostatic heating plate 10 returns to the normal state compared with the preset current threshold range, and the current required by the electrostatic heating plate 10 is significantly reduced, thereby avoiding the above-mentioned problems existing when the current curve is I1, so that the electrostatic heating plate 10 can be heated smoothly, the heating efficiency is higher, the energy consumption in the preparation process is lower, at the same time, the service life of the electrostatic heating plate 10 is prolonged, the temperature fluctuation of the electrostatic heating plate 10 is reduced, and the thermal stability is improved.

[0092] The cleaning method of the semiconductor device disclosed in the present application, wherein the semiconductor device comprises a reaction chamber and an electrostatic heating disc located in the reaction chamber, the cleaning method is used for cleaning the electrostatic heating disc, the method comprises: performing a first cleaning stage, wherein the temperature is controlled in a first temperature range, a first cleaning gas is introduced into the reaction chamber, and the first cleaning gas at least comprises a fluorine-containing gas and a first carrier gas; performing a second cleaning stage, wherein the temperature is controlled in a second temperature range, a second cleaning gas is introduced into the reaction chamber, and the second cleaning gas at least comprises a second carrier gas and an oxidizing gas or a reducing gas. The carbon by-products generated on the electrostatic heating disc in the plasma enhanced chemical vapor deposition process are effectively removed by different stages and different temperature conditions, so as to ensure the effective adsorption of the electrostatic heating disc to the wafer in the process, and the service life of the electrostatic heating disc is improved.

[0093] The above description is only an embodiment of the present application, and does not limit the patent scope of the present application. Any equivalent structure or equivalent process transformation, or direct or indirect application in other related technical fields, which is based on the content of the specification and drawings of the present application, is also included in the patent protection scope of the present application.

Claims

1. A cleaning method of a semiconductor device, wherein, The method comprises: performing a first cleaning stage, wherein a temperature is controlled within a first temperature range, a first cleaning gas is introduced into a reaction chamber, the first cleaning gas at least comprising a fluorine-containing gas and a first carrier gas; performing a second cleaning stage, wherein a temperature is controlled within a second temperature range, a second cleaning gas is introduced into the reaction chamber, the second cleaning gas at least comprising a second carrier gas and an oxidizing gas or a reducing gas.

2. The cleaning method of a semiconductor device according to claim 1, wherein, In the first cleaning stage, the first temperature range is 200-450 DEG C.

3. The cleaning method of a semiconductor device according to Claim 1, wherein, The fluorine-containing gas comprises at least one of nitrogen trifluoride, perfluorobutadiene, octafluorocyclobutane, difluoroacetylene and sulfur hexafluoride.

4. The cleaning method of a semiconductor device according to Claim 1, wherein, The flow rate of the fluorine-containing gas is 1000-2000 sccm.

5. The cleaning method of a semiconductor device as claimed in claim 1, wherein, The first carrier gas and the second carrier gas each comprise at least one of nitrogen, argon and helium.

6. The cleaning method of a semiconductor device as claimed in claim 1, wherein, The flow rate of the first carrier gas and the flow rate of the second carrier gas are each 2500-3500 sccm.

7. The cleaning method of a semiconductor device according to any one of claims 1 to 6, wherein, The first cleaning gas further comprises a functional gas, the functional gas comprising at least one of oxygen, ozone, carbon dioxide, water vapor, chlorine, fluorine, nitrogen dioxide, nitrous oxide and hydrogen peroxide; the flow rate of the functional gas is 200-5000 sccm.

8. The cleaning method of a semiconductor device according to any one of claims 1 to 6, wherein, The first cleaning gas further comprises a functional gas, the functional gas comprising hydrogen; the flow rate of the functional gas is 200-5000 sccm.

9. The cleaning method of a semiconductor device as claimed in claim 1, wherein, In the second cleaning stage, the second temperature range is 500-700 DEG C.

10. The cleaning method of a semiconductor device as claimed in claim 1, wherein, The oxidizing gas comprises at least one of oxygen, carbon dioxide, water vapor, chlorine, fluorine, ozone, nitrogen dioxide, nitrous oxide and hydrogen peroxide.

11. The cleaning method of a semiconductor device as claimed in claim 1, wherein, The flow rate of the oxidizing gas is 200-5000 sccm.

12. The cleaning method of a semiconductor device as claimed in claim 1, wherein, The reducing gas comprises hydrogen.

13. The cleaning method of a semiconductor device as claimed in claim 1, wherein, The flow rate of the reducing gas is 200-5000 sccm.

14. The cleaning method of a semiconductor device as claimed in claim 1, wherein, The first cleaning time of the first cleaning stage is 10-300 minutes, and the second cleaning time of the second cleaning stage is 10-300 minutes.

15. The cleaning method of a semiconductor device as claimed in claim 1, wherein, The radio frequency power of the first cleaning stage is 500-6000 W, and the radio frequency power of the second cleaning stage is 500-6000 W.

16. The cleaning method of a semiconductor device as claimed in claim 1, wherein, Before the first cleaning stage, between the first cleaning stage and the second cleaning stage and after the second cleaning stage, the method further comprises: introducing a third cleaning gas into the reaction chamber, the third cleaning gas comprising at least one of argon, nitrogen and helium, the flow rate of the third cleaning gas being 3000-6000 sccm.

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